WO2024117809A1 - Précurseur permettant de former un film mince contenant de l'yttrium ou du scandium, procédé de formation d'un film mince contenant de l'yttrium ou du scandium l'utilisant, et dispositif semi-conducteur comprenant le film mince contenant de l'yttrium ou du scandium - Google Patents
Précurseur permettant de former un film mince contenant de l'yttrium ou du scandium, procédé de formation d'un film mince contenant de l'yttrium ou du scandium l'utilisant, et dispositif semi-conducteur comprenant le film mince contenant de l'yttrium ou du scandium Download PDFInfo
- Publication number
- WO2024117809A1 WO2024117809A1 PCT/KR2023/019540 KR2023019540W WO2024117809A1 WO 2024117809 A1 WO2024117809 A1 WO 2024117809A1 KR 2023019540 W KR2023019540 W KR 2023019540W WO 2024117809 A1 WO2024117809 A1 WO 2024117809A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- forming
- precursor
- group
- formula
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 105
- 239000002243 precursor Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 71
- 229910052706 scandium Inorganic materials 0.000 title claims abstract description 21
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 23
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 21
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 15
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 15
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 6
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- UOCJDOLVGGIYIQ-PBFPGSCMSA-N cefatrizine Chemical group S([C@@H]1[C@@H](C(N1C=1C(O)=O)=O)NC(=O)[C@H](N)C=2C=CC(O)=CC=2)CC=1CSC=1C=NNN=1 UOCJDOLVGGIYIQ-PBFPGSCMSA-N 0.000 claims description 3
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 12
- 239000003446 ligand Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 abstract description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 abstract description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- -1 pentadienyl Chemical group 0.000 description 19
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000003786 synthesis reaction Methods 0.000 description 14
- 239000002904 solvent Substances 0.000 description 13
- 238000005481 NMR spectroscopy Methods 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 8
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 6
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000113 differential scanning calorimetry Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000002411 thermogravimetry Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229930195734 saturated hydrocarbon Natural products 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- BDNKZNFMNDZQMI-UHFFFAOYSA-N 1,3-diisopropylcarbodiimide Chemical compound CC(C)N=C=NC(C)C BDNKZNFMNDZQMI-UHFFFAOYSA-N 0.000 description 1
- IQSUNBLELDRPEY-UHFFFAOYSA-N 1-ethylcyclopenta-1,3-diene Chemical compound CCC1=CC=CC1 IQSUNBLELDRPEY-UHFFFAOYSA-N 0.000 description 1
- VKWMOOFWZGJOQO-UHFFFAOYSA-N 5,5-diethylcyclopenta-1,3-diene Chemical compound CCC1(CC)C=CC=C1 VKWMOOFWZGJOQO-UHFFFAOYSA-N 0.000 description 1
- 241000349731 Afzelia bipindensis Species 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052767 actinium Inorganic materials 0.000 description 1
- QQINRWTZWGJFDB-UHFFFAOYSA-N actinium atom Chemical compound [Ac] QQINRWTZWGJFDB-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- BGRWYRAHAFMIBJ-UHFFFAOYSA-N diisopropylcarbodiimide Natural products CC(C)NC(=O)NC(C)C BGRWYRAHAFMIBJ-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NFWSQSCIDYBUOU-UHFFFAOYSA-N methylcyclopentadiene Chemical compound CC1=CC=CC1 NFWSQSCIDYBUOU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Abstract
La présente invention concerne un précurseur permettant de former un film mince contenant de l'yttrium (Y) ou du scandium (Sc), le précurseur comprenant un composé représenté par la formule chimique 1, un procédé de formation d'un film mince contenant de l'yttrium ou du scandium l'utilisant, et un dispositif semi-conducteur comprenant le film mince contenant de l'yttrium ou du scandium. Le précurseur permettant de former un film mince a une structure chimique comprenant un ligand du type cyclopentadiényle asymétrique et un ligand du type amidinate asymétrique, présentant ainsi une résistance à la chaleur élevée et une volatilité élevée, et par conséquent, présente l'effet de former un film mince de haute qualité.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2022-0163585 | 2022-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2024117809A1 true WO2024117809A1 (fr) | 2024-06-06 |
Family
ID=
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101260858B1 (ko) | 금속 함유 화합물, 그 제조 방법, 금속 함유 박막 및 그형성 방법 | |
| JP5548748B2 (ja) | ハフニウム系薄膜形成方法およびハフニウム系薄膜形成材料 | |
| WO2015105337A1 (fr) | Nouveau dérivé trisilyl amine, procédé pour le préparer et couche mince contenant du silicium l'utilisant | |
| KR101598485B1 (ko) | 성막용 전구체 조성물 및 이를 이용한 박막 형성 방법 | |
| WO2015142053A1 (fr) | Composé aminé de germanium organique et procédé de dépôt de film mince l'utilisant | |
| WO2017014399A1 (fr) | Précurseur de tungstène et procédé de dépôt de film contenant du tungstène comprenant celui-ci | |
| WO2015130108A1 (fr) | Composition de précurseur pour formation de pellicule contenant du zirconium et procédé de formation de pellicule contenant du zirconium à l'aide de celle-ci | |
| KR101785594B1 (ko) | 성막용 전구체 조성물 및 이를 이용한 박막 형성 방법 | |
| WO2019066179A1 (fr) | Précurseur de dépôt en phase vapeur présentant une excellente stabilité thermique et une excellente réactivité et procédé de préparation correspondant | |
| WO2014084557A1 (fr) | Composés de précurseur de silicium et procédé de dépôt de film mince contenant du silicium l'utilisant | |
| WO2024117809A1 (fr) | Précurseur permettant de former un film mince contenant de l'yttrium ou du scandium, procédé de formation d'un film mince contenant de l'yttrium ou du scandium l'utilisant, et dispositif semi-conducteur comprenant le film mince contenant de l'yttrium ou du scandium | |
| WO2016133365A1 (fr) | Composé de l'aluminium et procédé pour la formation de film contenant de l'aluminium l'utilisant | |
| WO2022245039A1 (fr) | Nouveau composé contenant de l'hafnium, composition de précurseur d'hafnium le contenant, film mince contenant de l'hafnium utilisant cette composition de précurseur d'hafnium et procédé de préparation associé | |
| WO2024049037A1 (fr) | Nouveau ligand amidinate, et précurseur de formation de film mince comprenant un ligand | |
| KR20240080329A (ko) | 이트륨 또는 스칸듐 함유 박막 형성용 전구체, 이를 이용한 이트륨 또는 스칸듐 함유 박막 형성 방법 및 상기 이트륨 또는 스칸듐 함유 박막을 포함하는 반도체 소자. | |
| KR102327450B1 (ko) | 4족 전이금속 화합물, 이의 제조방법 및 이를 포함하는 박막증착용 조성물 | |
| WO2024117807A1 (fr) | Précurseur servant à former une couche mince contenant du scandium ou de l'yttrium, procédé de formation de couche mince contenant du scandium ou de l'yttrium l'utilisant, et dispositif à semi-conducteur comprenant une couche mince contenant du scandium ou de l'yttrium | |
| WO2014073892A1 (fr) | Procédé de fabrication de couche mince contenant du silicium | |
| KR20220039318A (ko) | 열 안정성이 우수한 신규 4족 유기금속 전구체 화합물, 그 제조방법 및 이를 이용한 박막 형성 방법 | |
| WO2024058624A1 (fr) | Précurseur pour former un film mince contenant un métal lanthanide, procédé de formation d'un film mince contenant un métal lanthanide faisant appel à celui-ci, et élément semi-conducteur comprenant un film mince contenant un métal lanthanide | |
| KR102666160B1 (ko) | 이트륨 또는 스칸듐 함유 박막 형성용 전구체, 이를 이용한 이트륨 또는 스칸듐 함유 박막 형성 방법 및 상기 이트륨 또는 스칸듐 함유 박막을 포함하는 반도체 소자. | |
| WO2023113308A1 (fr) | Composé de molybdène, son procédé de préparation et composition le comprenant pour un dépôt de film mince | |
| KR102621779B1 (ko) | 박막 증착을 위한 니오비움 전구체 화합물 및 이를 이용한 니오비움 함유 박막의 형성 방법 | |
| WO2021045385A2 (fr) | Procédé de formation de couche mince de nitrure métallique | |
| WO2021137595A1 (fr) | Procédé de formation d'un film de matériau à l'aide d'un matériau de protection de surface |