WO2015105337A1 - Nouveau dérivé trisilyl amine, procédé pour le préparer et couche mince contenant du silicium l'utilisant - Google Patents
Nouveau dérivé trisilyl amine, procédé pour le préparer et couche mince contenant du silicium l'utilisant Download PDFInfo
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- WO2015105337A1 WO2015105337A1 PCT/KR2015/000168 KR2015000168W WO2015105337A1 WO 2015105337 A1 WO2015105337 A1 WO 2015105337A1 KR 2015000168 W KR2015000168 W KR 2015000168W WO 2015105337 A1 WO2015105337 A1 WO 2015105337A1
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- thin film
- chemical formula
- amine derivative
- silicon
- trisilyl amine
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- 239000010409 thin film Substances 0.000 title claims abstract description 73
- VOSJXMPCFODQAR-UHFFFAOYSA-N trisilylamine group Chemical class [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 38
- 229910052710 silicon Inorganic materials 0.000 title claims description 37
- 239000010703 silicon Substances 0.000 title claims description 37
- 238000000151 deposition Methods 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims description 49
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 27
- 229910052736 halogen Inorganic materials 0.000 claims description 12
- 150000002367 halogens Chemical group 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 150000002431 hydrogen Chemical group 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims description 6
- 125000006701 (C1-C7) alkyl group Chemical group 0.000 claims description 3
- 229910052987 metal hydride Inorganic materials 0.000 claims description 3
- 150000004681 metal hydrides Chemical class 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 230000009257 reactivity Effects 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 27
- 238000006243 chemical reaction Methods 0.000 description 23
- 239000000243 solution Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000002243 precursor Substances 0.000 description 16
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 15
- 230000008021 deposition Effects 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000000706 filtrate Substances 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- -1 silane chlorides Chemical class 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000012686 silicon precursor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000004817 gas chromatography Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012844 infrared spectroscopy analysis Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000002411 thermogravimetry Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- YGHUUVGIRWMJGE-UHFFFAOYSA-N chlorodimethylsilane Chemical compound C[SiH](C)Cl YGHUUVGIRWMJGE-UHFFFAOYSA-N 0.000 description 2
- 229960001701 chloroform Drugs 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910000103 lithium hydride Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 229910014329 N(SiH3)3 Inorganic materials 0.000 description 1
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 125000001339 silanediyl group Chemical group [H][Si]([H])(*)* 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001577 simple distillation Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
Definitions
- the present invention relates to a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, and more particularly, to a novel trisilyl amine derivative having thermal stability and high volatility and being present in a liquid state at room temperature and under a pressure where handling is possible, a method for preparing the same, and a silicon-containing thin film using the same.
- a silicon-containing thin film is manufactured in various shapes, such as a silicon film, a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a silicon oxynitride film, and the like, by various deposition processes in a semiconductor field, and is variously applied to many fields.
- the silicon oxide film and the silicon nitride film may function as an insulating film, a diffusion prevention film, a hard mask, an etching stop layer, a seed layer, a spacer, trench isolation, intermetallic dielectric material and a protective layer in manufacturing a device, due to significantly excellent block property and oxidation resistance.
- TFT thin film transistor
- MOCVD metal organic chemical vapor deposition
- ALD atomic layer deposition
- LPCVD low pressure chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- PEALD plasma enhanced atomic layer deposition
- Representative examples of a precursor used in forming a silicon-containing thin film as described in Korean Patent Laid-Open Publication No. KR 2007-0055898 include silanes, silane chlorides, amino silanes and alkoxysilanes, and more specifically, silane chlorides such as dichlorosilane (SiH 2 Cl 2 ) and hexachlorodisilane (Cl 3 SiSiCl 3 ) and trisilylamine (N(SiH 3 ) 3 ), bis-diethylaminosilane (H 2 Si(N(CH 2 CH 3 ) 2 ) 2 ) and di-isopropylaminosilane (H 3 SiN(i-C 3 H 7 ) 2 ), and the like, which are used in a mass production of a semiconductor and a display.
- silane chlorides such as dichlorosilane (SiH 2 Cl 2 ) and hexachlorodisilane (Cl 3 SiSiCl 3 ) and
- An object of the present invention is to provide a novel trisilyl amine derivative.
- Another object of the present invention is to provide a novel trisilyl amine derivative which is a precursor compound for thin film deposition.
- Another object of the present invention is to provide a method for preparing a trisilyl amine derivative.
- another object of the present invention is to provide a composition for depositing a silicon-containing thin film, which includes the trisilyl amine derivative of the present invention, a method for manufacturing a silicon-containing thin film, and the silicon-containing thin film manufactured by using the trisilyl amine derivative of the present invention.
- the present invention provides a novel trisilyl amine derivative capable of forming a silicon thin film having excellent cohesion, high deposition rate, and excellent physical and electrical properties even at a low temperature.
- the novel trisilyl amine derivative of the present invention is represented by the following Chemical Formula 1:
- R 1 and R 2 are each independently hydrogen, halogen, or (C1-C3)alkyl.
- the trisilyl amine derivative represented by Chemical Formula 1 of the present invention is present in a liquid-state at room temperature and under atmospheric pressure, and has superior volatility and excellent reactivity, thereby allowing a thin film to be easily formed.
- the reason is because when both of R 1 and R 2 are methyl in Chemical Formula 1, the trisilyl amine derivative is present in a liquid state at room temperature and under atmospheric pressure, but still has low reactivity. Meanwhile, the trisilyl amine derivative of the present invention, excluding a case in which both of R 1 and R 2 are methyl, is a liquid state compound having superior volatility and excellent reactivity, thereby allowing a thin film to be easily formed.
- the trisilyl amine derivative of the present invention has high thermal stability and low activation energy to thereby have excellent reactivity, and does not generate non-volatile by-product, thereby allowing a silicon-containing thin film having high purity to be easily formed.
- R 1 and R 2 are each independently hydrogen, halogen, or methyl, provided that a case in which both of R 1 and R 2 are methyl is excluded.
- the Chemical Formula 1 according to an exemplary embodiment of the present invention may be selected from the following compounds, but the present invention is not limited thereto:
- trisilyl amine derivative represented by Chemical Formula 1 of the present invention may be preferably used as a precursor compound for depositing a silicon-containing thin film.
- the present invention provides a method for preparing a trisilyl amine derivative represented by Chemical Formula 1, the method including: preparing the trisilyl amine derivative represented by the following Chemical Formula 1 by reacting a compound represented by the following Chemical Formula 3 with a compound represented by the following Chemical Formula 4 in the presence of a base represented by the following Chemical Formula 2 or (C1-C7)alkyllithium:
- R 1 and R 2 are each independently hydrogen, halogen, or (C1-C3)alkyl
- R 3 to R 5 are each independently (C1-C7)alkyl
- X 1 is halogen
- (C1-C7)alkyllithium is a compound where lithium is bonded to (C1-C7)alkyl, for example, methyllithium, tert-butyllithium, n-butyllithium, and the like, and preferably, n-butyllithium.
- the present invention provides a method for preparing a trisilyl amine derivative represented by the following Chemical Formula 1, the method including: preparing the trisilyl amine derivative represented by the following Chemical Formula 1 by reacting a metal hydride with a compound represented by the following Chemical Formula 5:
- R 1 and R 2 are each independently hydrogen, halogen, or (C1-C3)alkyl
- X 2 or X 3 is each independently hydrogen or halogen.
- a metal in the metal hydride according to an exemplary embodiment of the present invention may be an alkali metal or an alkali earth metal, and preferably, lithium.
- Solvents used in the preparation method of the present invention are not limited if they are not reacted with the starting material among general organic solvents, for example, may be at least one selected from the group consisting of normalhexane (n-hexane), cyclohexane, normalpentane (n-pentane), diethyl ether, toluene, tetrahydrofuran (THF), dichloromethane (DCM), and trichloromethane (chloroform).
- n-hexane normalhexane
- cyclohexane normalpentane
- diethyl ether diethyl ether
- toluene toluene
- THF tetrahydrofuran
- DCM dichloromethane
- chloroform trichloromethane
- a reaction temperature in the preparation method of the present invention is not limited if the temperature is used in a general organic synthesis; however, it may be varied depending on an amount of the reaction time, the reaction material, and the starting material, wherein the reaction needs to be finished after confirming that the starting material is completely consumed by NMR, GC, and the like.
- the solvent may be removed by filtration, followed by simple distillation under reduced pressure, and then a desired material may be separated and refined by general methods such as fractional distillation, distillation under reduced pressure, and the like.
- the present invention provides a composition for depositing a silicon-containing thin film, including the trisilyl amine derivative as described above, and a method for manufacturing a silicon-containing thin film manufactured by using the trisilyl amine derivative as described above.
- composition for depositing a silicon-containing thin film of the present invention may contain the trisilyl amine derivative as a precursor for thin film deposition, and the trisilyl amine derivative in the composition for depositing a silicon-containing thin film may have a content within the range which is recognizable by a person skilled in the art in consideration of film forming conditions, or thickness, properties, and the like, of the thin film.
- the present invention provides a silicon-containing thin film manufactured by using the trisilyl amine derivative as described above.
- the silicon-containing thin film of the present invention may be manufactured by general methods, for example, metal organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD), and the like.
- MOCVD metal organic chemical vapor deposition
- ALD atomic layer deposition
- LPCVD low pressure chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- PEALD plasma enhanced atomic layer deposition
- the trisilyl amine derivative of the present invention has low activation energy and high reactivity, and minimizes generation of non-volatile by-product, such that the silicon-containing thin film manufactured by using the trisilyl amine derivative of the present invention as a precursor may have high purity and excellent physical and electrical properties.
- the trisilyl amine derivative of the present invention has excellent thermal stability and high reactivity, such that the silicon-containing thin film manufactured by using the trisilyl amine derivative as a precursor may have high purity and significantly excellent physical and electrical properties.
- the trisilyl amine derivative of the present invention may have high content of silicon and be present in a liquid state at room temperature and under atmospheric pressure to thereby be easily stored and handled, and may have high volatility and high reactivity to be rapidly and easily deposited, and it is possible to deposit a thin film having excellent cohesion and superior step coverage.
- the silicon-containing thin film manufactured by using the trisilyl amine derivative of the present invention as a precursor may have high purity and significantly excellent physical and electrical properties.
- FIG. 1 shows a result obtained by thermogravimetric analysis of a trisilyl amine derivative prepared by Example 3.
- FIG. 2 shows a result obtained by thermogravimetric analysis of a trisilyl amine derivative prepared by Example 4.
- FIG. 3 shows a result obtained by vapor pressure measurement of the trisilyl amine derivative prepared by Example 4.
- FIG. 4 shows a method for depositing a silicon-containing thin film practiced by Example 4.
- FIG. 5 shows a result obtained by analyzing a film thickness of a silicon-containing thin film manufactured by Example 5, using an Ellipsometer(horizontal:wave number(cm -1 )).
- FIG. 6 shows a result obtained by infrared spectroscopic analysis of the deposited silicon-containing thin film manufactured by Example 5.
- FIG. 7 shows a method for depositing a silicon-containing thin film practiced by Example 6.
- FIG. 8 shows a result obtained by infrared spectroscopic analysis of the silicon-containing thin film practiced by Example 6.
- Example 5 Deposition of silicon oxide film by Plasma Enhanced Atomic Layer Deposition (PEALD) using trisilyl amine derivative
- FIG. 4 and Table 1 specifically show a method for depositing the silicon oxide thin film.
- Table 1 Deposition Condition of Silicon Oxide Thin film Precursor Bis-dimethylsilyl silyl amine Tris-dimethylsilyl amine Heating Temperature (°C) of Precursor 5 35 Substrate Temperature (°C) 100 100 Kind of Substrate Si wafer Si wafer Injection Time (sec) of Precursor 3 3 Purge Flow Amount (sccm) 1100 1100 Time (sec) 20 20 400W Oxygen Plasma Flow Amount (sccm) of Oxygen/Argon 300/100 300/100 Time (sec) 10 10 Purge Flow Amount (sccm) 1100 1100 Time (sec) 15 15 Frequency of Deposition Cycle 50 50
- FIG. 5 shows a thickness of the film by Ellipsometer analysis. It was confirmed that a thickness of the thin film deposited by using the bis-dimethylsilyl silyl amine compound was 50.5 ⁇ and a thickness of the thin film deposited by using the tris-dimethylsilyl amine compound was 65.8 ⁇ It is determined that these thin films are capable of being effectively used throughout all silicon oxide thin film application fields requiring a high deposition rate.
- FIG. 6 shows infrared spectroscopic analysis of the deposited film. It was shown that all of the thin films were formed as silicon oxide thin films, and peak of impurities such as C-H, Si-OH was not observed.
- the novel trisilyl amine derivative prepared by the present invention has high utilization value in forming a high purity silicon oxide thin film having a high deposition rate by plasma enhanced atomic layer deposition (PEALD).
- PEALD plasma enhanced atomic layer deposition
- FIG. 4 and Table 2 specifically show a method for depositing the silicon oxide thin film.
- the thin films had a thickness ranging from 21 to 35.5 ⁇ which showed a low deposition rate as compared to the trisilyl amine derivatives of Examples 3 and 4, and all thin films were formed as the silicon oxide film.
- Example 6 Deposition of silicon nitride film by Plasma Enhanced Atomic Layer Deposition (PEALD) using trisilyl amine derivative
- Example 3 Film forming evaluation was conducted by using the trisilyl amine derivative of Example 3 according to the present invention as a composition for forming a silicon nitride film in a general plasma enhanced atomic layer deposition (PEALD) apparatus using the known PEALD method. Silicon substrate was used a substrate, nitrogen together with plasma was used as a reaction gas, and the same nitrogen gas was used for purging.
- FIG. 7 and Table 3 specifically show a method for depositing the silicon nitride thin film.
- a thickness of the deposited thin film was measured by an Ellipsometer, and formation of SiN thin film and components of the thin film were analyzed by an infrared spectrophotometer and an auger electron spectrometer. In 500 cycles on a flat panel wafer, a thickness of the thin film was 130.1 ⁇
- etch rate of the deposited thin film was confirmed by using buffered oxide etchant (BOE) solution (300: 1).
- BOE buffered oxide etchant
- the deposited silicon nitride thin film was etched at a rate of 0.04 ⁇ /sec, and a silicon oxide thin film(thermal oxide) deposited by a pyrolysis deposition method at 1000°C as a comparative sample was etched at a rate of 0.34 ⁇ /sec, and a silicon nitride thin film deposited by low pressure chemical vapor deposition (LPCVD) at 770°C using dichloro silane was etched at a rate of 0.02 ⁇ /sec.
- LPCVD low pressure chemical vapor deposition
- the novel trisilyl amine derivative prepared by the present invention has high utilization value in forming a high purity silicon nitride thin film having a high deposition rate and excellent etch resistance by plasma enhanced atomic layer deposition (PEALD).
- PEALD plasma enhanced atomic layer deposition
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Abstract
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CN201580009063.6A CN106029680B (zh) | 2014-01-08 | 2015-01-08 | 新三甲硅烷基胺衍生物、其制备方法以及使用其的含硅薄膜 |
US15/110,692 US10202407B2 (en) | 2014-01-08 | 2015-01-08 | Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same |
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EP3388440A1 (fr) | 2017-02-08 | 2018-10-17 | Versum Materials US, LLC | Oligosiloxanes linéaires et cycliques à fonction organoamino pour le dépôt de films contenant du silicium |
US10403494B2 (en) | 2015-03-30 | 2019-09-03 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
EP3553204A2 (fr) | 2018-04-11 | 2019-10-16 | Versum Materials US, LLC | Oligosiloxanes cycliques à fonction organoamino pour le dépôt de films contenant du silicium |
US10464953B2 (en) | 2016-10-14 | 2019-11-05 | Versum Materials Us, Llc | Carbon bridged aminosilane compounds for high growth rate silicon-containing films |
US10501484B2 (en) | 2013-09-27 | 2019-12-10 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Amine substituted trisilylamine and tridisilylamine compounds and synthesis methods thereof |
US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
WO2021201910A1 (fr) | 2020-04-02 | 2021-10-07 | Versum Materials Us, Llc | Oligosiloxanes cycliques à fonction organoamino pour le dépôt de films contenant du silicium |
US11177127B2 (en) | 2017-05-24 | 2021-11-16 | Versum Materials Us, Llc | Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films |
US11591692B2 (en) | 2017-02-08 | 2023-02-28 | Versum Materials Us, Llc | Organoamino-polysiloxanes for deposition of silicon-containing films |
US11912730B2 (en) | 2019-04-05 | 2024-02-27 | Versum Materials Us, Llc | Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films |
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US11124876B2 (en) | 2015-03-30 | 2021-09-21 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
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