WO2015190749A1 - Nouveau composé d'amino-silylamine et procédé de fabrication de film diélectrique contenant une liaison si-n au moyen d'un dépôt de couche atomique - Google Patents
Nouveau composé d'amino-silylamine et procédé de fabrication de film diélectrique contenant une liaison si-n au moyen d'un dépôt de couche atomique Download PDFInfo
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- WO2015190749A1 WO2015190749A1 PCT/KR2015/005610 KR2015005610W WO2015190749A1 WO 2015190749 A1 WO2015190749 A1 WO 2015190749A1 KR 2015005610 W KR2015005610 W KR 2015005610W WO 2015190749 A1 WO2015190749 A1 WO 2015190749A1
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 56
- -1 amino-silyl Chemical group 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000000231 atomic layer deposition Methods 0.000 title abstract description 30
- 229910007991 Si-N Inorganic materials 0.000 claims abstract description 57
- 229910006294 Si—N Inorganic materials 0.000 claims abstract description 57
- 238000000151 deposition Methods 0.000 claims description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 60
- 230000008021 deposition Effects 0.000 claims description 58
- 239000000203 mixture Substances 0.000 claims description 56
- 239000012495 reaction gas Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 31
- 239000000126 substance Substances 0.000 claims description 26
- 238000010926 purge Methods 0.000 claims description 18
- 239000006227 byproduct Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 239000003446 ligand Substances 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 7
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- 229920002554 vinyl polymer Chemical group 0.000 claims description 4
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 claims description 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 claims description 3
- 125000006592 (C2-C3) alkenyl group Chemical group 0.000 claims description 3
- 125000006593 (C2-C3) alkynyl group Chemical group 0.000 claims description 3
- 125000006650 (C2-C4) alkynyl group Chemical group 0.000 claims description 3
- 125000006376 (C3-C10) cycloalkyl group Chemical group 0.000 claims description 3
- 125000006272 (C3-C7) cycloalkyl group Chemical group 0.000 claims description 3
- 125000004399 C1-C4 alkenyl group Chemical group 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000003039 volatile agent Substances 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 24
- 238000000034 method Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 10
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 7
- 238000004566 IR spectroscopy Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 4
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 4
- 239000000706 filtrate Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 238000002411 thermogravimetry Methods 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004817 gas chromatography Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GJWAPAVRQYYSTK-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)amino]-dimethylsilicon Chemical compound C[Si](C)N[Si](C)C GJWAPAVRQYYSTK-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 125000006413 ring segment Chemical group 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- MAUMSNABMVEOGP-UHFFFAOYSA-N (methyl-$l^{2}-azanyl)methane Chemical compound C[N]C MAUMSNABMVEOGP-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Natural products C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N Propene Chemical compound CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- YGHUUVGIRWMJGE-UHFFFAOYSA-N chlorodimethylsilane Chemical compound C[SiH](C)Cl YGHUUVGIRWMJGE-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000003454 indenyl group Chemical group C1(C=CC2=CC=CC=C12)* 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- CFZHOUYDAHXRLY-UHFFFAOYSA-N n-[chloro(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)Cl CFZHOUYDAHXRLY-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
Definitions
- the present invention relates to a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing a Si-N bond by using atomic layer deposition, and more particularly, to a manufacturing method of a dielectric film containing a Si-N bond manufactured by adjusting ratios and amounts of an amino-silyl amine compound, a reaction gas containing a nitrogen source, and argon gas using atomic layer deposition.
- a dielectric film containing a Si-N including a silicon nitride (SiN) film and a silicon carbonitride (SiCN) film has high resistance against hydrogen fluoride (HF). Therefore, in a manufacturing process of a semiconductor device such as a memory, a large scale integrated circuit (LSI), and the like, the dielectric film may be used as an etching stopper layer at the time of etching a silicon oxide (SiO 2 ) film, or the like, a film for preventing a deviation increase of resistance of a gate electrode or diffusion of a dopant, or the like. Particularly, there is a need to decrease a film formation temperature of a silicon nitride film after forming the gate electrode.
- the film formation temperature should be lower than 760°C, which is a film formation temperature in the case of using low pressure-chemical vapor deposition (LP-CVD) according to the related art, or 550°C, which is a film formation temperature in the case of using atomic layer deposition (ALD).
- LP-CVD low pressure-chemical vapor deposition
- ALD atomic layer deposition
- the ALD is a method of alternately supplying one of two kinds (or more) of source gas used for film formation onto a substrate under arbitrary film formation conditions (temperature, time, and the like) to adsorb the gas in a unit of one atomic layer, and performing film formation using a surface reaction.
- a film having a thickness corresponding to one molecular layer is formed by alternately flowing first source gas and second source gas along a surface of an object to be treated to adsorb source gas molecules of the first source gas in the surface of the object to be treated and reacting source gas molecules of the second source gas with the adsorbed source gas molecules of the first source gas.
- a film having high quality is formed on the surface of the object to be treated by repeating this step.
- a silicon nitride film capable of being formed at a low temperature of 300°C to 600°C by supplying an ammonia radical (NH 3 *) obtained by activating ammonia with plasma in the case of alternatively supplying dichlorosilane (DCS: SiH 2 Cl 2 ) and ammonia (NH 3 ) using ALD has been disclosed in Japanese Patent Laid-Open Publication No. 2004-281853.
- the silicon nitride film formed at a low temperature using ALD a concentration of chlorine (Cl) that is a factor affecting natural oxidation of the silicon nitride film or deteriorating resistance of the silicon nitride film against hydrogen fluoride is increased, such that a wet etch rate is large, and thus, etching selectivity (selection rate) to an oxide film is small.
- the silicon nitride film formed at a low temperature has low film stress, such that it is impossible to implement desired stress intensity.
- a method of introducing carbon (C) in the silicon nitride film to improve resistance against hydrogen fluoride may be suggested, but in a low temperature region of 400°C or less, introduction of carbon in the silicon nitride film may cause a structural defect, such that a dielectric property may be deteriorated.
- the present inventors tried to provide a manufacturing method of a dielectric film containing a Si-N bond having excellent cohesive force, a high deposition rate, and excellent physical and electrical properties even at a low temperature by using atomic layer deposition, thereby completing the present invention.
- An object of the present invention is to provide an amino-silyl amine compound having excellent thermal stability and high reactivity, and a manufacturing method of a dielectric film containing a Si-N bond manufactured by adjusting a ratio of the amino-silyl amine compound and a reaction gas containing a nitrogen source using atomic layer deposition.
- an amino-silyl amine compound represented by the following Chemical Formula 1.
- R 1 to R 4 are each independently hydrogen, (C1-C3)alkyl, (C2-C3)alkenyl, (C2-C3)alkynyl, (C3-C7)cycloalkyl, or (C6-C12) aryl.
- R 1 to R 4 may each independently hydrogen, methyl, or vinyl.
- the amino-silyl amine compound represented by Chemical Formula 1 may be selected from the following compounds.
- composition for silicon-containing dielectric film deposition containing an amino-silyl amine compound represented by the following Chemical Formula 2.
- R 1 to R 7 are each independently hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, (C3-C10)cycloalkyl, or (C6-C12) aryl.
- the amino-silyl amine compound represented by Chemical Formula 2 may be selected from the following compounds.
- the manufacturing method of a dielectric film may include: a) contacting the composition for silicon-containing dielectric film deposition with a substrate to adsorb the composition for silicon-containing dielectric film deposition in the substrate; b) purging the remaining composition for silicon-containing dielectric film deposition and by-products; c) forming an atomic layer having a Si-N bond by injecting reaction gas into the substrate containing the adsorbed composition for silicon-containing dielectric film deposition to remove a ligand of the composition for silicon-containing dielectric film deposition; and d) purging the remaining reaction gas and reaction by-products.
- the manufacturing method of a dielectric film may include: a) contacting the composition for silicon-containing dielectric film deposition with a substrate to adsorb the composition for silicon-containing dielectric film deposition in the substrate; b) purging the remaining composition for silicon-containing dielectric film deposition and by-products; c') forming an atomic layer having a Si-N bond by generating plasma while injecting reaction gas into the substrate containing the adsorbed composition for silicon-containing dielectric film deposition to remove a ligand of the adsorbed composition for silicon-containing dielectric film deposition; and d) purging the remaining reaction gas and reaction by-products.
- the reaction gas may be supplied after being activated by generating plasma of 50 to 1000W.
- the reaction gas may be supplied after being activated by generating plasma of 100 to 500W.
- a substrate temperature may be 100 to 600°C.
- the reaction gas may be supplied at a flow rate of 100 to 10000sccm.
- Step a) may be performed at a pressure of 0.05 to 10 torr, and step c) and step c') may be performed at a pressure of 0.05 to 30 torr.
- a novel amino-silyl amine compound according to the present invention has excellent thermal stability and high reactivity, and a silicon-containing film manufactured using this amino-silyl amine compound as a precursor has high purity and excellent physical and electrical properties, such that the amino-silyl amine compound may be used as a composition for silicon-containing dielectric film deposition capable of forming a silicon-containing dielectric film in a low temperature region.
- a dielectric film manufactured using the composition for silicon-containing dielectric film deposition containing the amino-silyl amine compound has high purity and excellent physical and electrical properties
- a dielectric film containing Si-N bond, having high stress at a low temperature may be manufactured by using atomic layer deposition.
- FIG. 1 illustrates a result obtained by measuring a vapor pressure of a novel amino-silyl amine compound prepared in Example 1,
- FIG. 2 illustrates a result obtained by performing thermogravimetric analysis on the novel amino-silyl amine compound prepared in Example 1,
- FIG. 3 is a view illustrating a deposition method of a dielectric film containing a Si-N bond performed in Example 2,
- FIG. 4 is a view illustrating a deposition method of a dielectric film containing a Si-N bond performed in Examples 3 to 5,
- FIG. 5 illustrates a result obtained by analyzing the dielectric film containing a Si-N bond deposited in Example 2 using infrared spectroscopy
- FIG. 6 illustrates a result obtained by analyzing a composition of the dielectric film containing a Si-N bond deposited in Example 2 using Auger electron spectroscopy
- FIG. 7 illustrates a result obtained by analyzing a composition of the dielectric film containing a Si-N bond deposited in Example 3 using Auger electron spectroscopy
- FIG. 8 illustrates a result obtained by analyzing a composition of the dielectric film containing a Si-N bond deposited in Example 4 using Auger electron spectroscopy
- FIG. 9 illustrates a result obtained by analyzing a composition of the dielectric film containing a Si-N bond deposited in Example 5 using Auger electron spectroscopy
- FIG. 10 illustrates a result obtained by analyzing resistance of the dielectric films containing a Si-N bond manufactured in Examples 2 to 5 and Comparative Examples 1 and 2 against hydrogen fluoride (300:1 BOE solution).
- the present invention provides a novel amino-silyl amine compound capable of forming a dielectric film containing a Si-N bond having excellent cohesive force, a high deposition rate, and excellent physical and electrical properties even at a low temperature, and a manufacturing method of a dielectric film containing Si-N bond by using atomic layer deposition.
- the amino-silyl amine compound according to the present invention may be represented by the following Chemical Formula 1.
- R 1 to R 4 are each independently hydrogen, (C1-C3)alkyl, (C2-C3)alkenyl, (C2-C3)alkynyl, (C3-C7)cycloalkyl, or (C6-C12) aryl.
- the terms ⁇ alkyl ⁇ and other substituents including an ⁇ alkyl ⁇ part include both of the straight chain type and the branched chain type.
- ⁇ aryl ⁇ which is an organic radical derived from an aromatic hydrocarbon by removing one hydrogen, includes a single or fused ring system containing, properly 4 to 7 ring atoms, and preferably 5 or 6 ring atoms in each ring, and include a plurality of aryl groups linked with a single bond(s).
- a specific example of aryl includes phenyl, naphthyl, biphenyl, anthryl, indenyl, fluorenyl, or the like, but is not limited thereto.
- ⁇ alkenyl ⁇ of the present invention is linear or branched hydrocarbon including at least one double bond, and a specific example thereof may include vinyl, prop-1-en, or buta-1,3-diene, but the present invention is not limited thereto.
- ⁇ alkynyl ⁇ of the present invention includes linear or branched hydrocarbon including at least one triple bond.
- novel amino-silyl amine compound according to the present invention which is a compound in a liquid state at room temperature and pressure, has excellent volatility, at the time of manufacturing a dielectric film, the amino-silyl amine compound may be rapidly and easily deposited and have excellent cohesive force and step coverage.
- the amino-silyl amine compound according to the present invention has high thermal stability, low activation energy, excellent reactivity, and does not produce by-products, which are non-volatile, such that a high purity silicon-containing dielectric film may be easily formed.
- R 1 to R 4 in Chemical Formula 1 may be each independently hydrogen, methyl, or vinyl, in view of forming a dielectric film having high thermal stability, reactivity and a high purity.
- the amino-silyl amine compound represented by Chemical Formula 1 is selected from the following compounds, but the present invention is not limited thereto.
- the present invention provides a composition for silicon-containing dielectric film deposition containing an amino-silyl amine compound represented by the following Chemical Formula 2, capable of forming a silicon film having excellent cohesive force, a high deposition rate, and excellent physical and electrical properties even at a low temperature.
- R 1 to R 7 are each independently hydrogen, (C1-C4)alkyl, (C2-C4)alkenyl, (C2-C4)alkynyl, (C3-C10)cycloalkyl, or (C6-C12) aryl.
- composition for silicon-containing dielectric film deposition may contain the amino-silyl amine compound represented by Chemical Formula 2 as a precursor for dielectric film deposition, and a content of the amino-silyl amine compound in the composition may be in a range recognized by a person skilled in the art in consideration of film formation conditions, a thickness, properties, and the like, of the dielectric film.
- the amino-silyl amine compound contained in the composition for silicon-containing dielectric film deposition as the precursor for dielectric film deposition may be preferably selected from the following compounds, but is not limited thereto.
- the present invention provides a manufacturing method of a dielectric film containing a Si-N bond using the composition for silicon-containing dielectric film deposition.
- the manufacturing method of a dielectric film may include: a) contacting the composition for silicon-containing dielectric film deposition with a substrate to adsorb the composition for silicon-containing dielectric film deposition in the substrate; b) purging the remaining composition for silicon-containing dielectric film deposition and by-products; c) forming an atomic layer having a Si-N bond by injecting reaction gas into the substrate containing the adsorbed composition for silicon-containing dielectric film deposition to remove a ligand of the composition for silicon-containing dielectric film deposition; and d) purging the remaining reaction gas and reaction by-products.
- the manufacturing method of a dielectric film may include: a) contacting the composition for silicon-containing dielectric film deposition with a substrate to adsorb the composition for silicon-containing dielectric film deposition in the substrate; b) purging the remaining composition for silicon-containing dielectric film deposition and by-products; c') forming an atomic layer having a Si-N bond by generating plasma while injecting reaction gas to remove a ligand of the adsorbed composition for silicon-containing dielectric film deposition; and d) purging the remaining reaction gas and reaction by-products.
- the manufacturing method of a dielectric film is performed under an inert atmosphere. Further, in order to manufacture a dielectric film having high purity, the manufacturing method may further include, after performing step a), removing an extra amino-silyl amine compound that is not adsorbed in the substrate and by-products generated during an adsorption process.
- the forming of the atomic layer having a Si-N bond by generating plasma while injecting the reaction gas to remove the ligand of the adsorbed composition for silicon-containing dielectric film deposition may include a process of injecting reaction gases in a chamber, generating at least one reaction gas radical of the reaction gases activated using plasma, converting the amino-silyl amine compound adsorbed by the activated reaction gas radical into silicon nitride (SiN), silicon carbonitride (SiCN), or silicon oxynitride (SiON), and then depositing a dielectric film including a Si-N bond on the substrate and a process of removing the ligand of the composition for silicon-containing dielectric film deposition generated during the process of converting the amino-silyl amine compound into silicon nitride (SiN), silicon carbonitride (SiCN), or silicon oxynitride (SiON).
- a cycle may be repeatedly performed until the desired thickness of the atomic layer having the Si-N bond is obtained.
- a substrate temperature may be 100 to 600°C, preferably 100 to 550°C. This means that the atomic layer may be formed even by a low temperature process by using the amino-silyl amine compound having excellent volatility.
- a pressure at the time of forming the atomic layer may be 0.05 to 30 torr.
- the pressure may be 0.05 to 10 torr
- the pressure may be 0.05 to 30 torr.
- the substrate temperature may be 100°C to 600°C
- the reaction gas may be at least one nitrogen source reaction gas selected from nitrogen (N 2 ), ammonia (NH 3 ), N 2 O, NO, and NO 2 , but is not limited thereto.
- N 2 nitrogen
- NH 3 ammonia
- N 2 O N 2 O
- NO nitrogen
- NO 2 nitrogen
- it is preferable that the reaction gas is supplied at a flow rate of 100 to 10000 standard cubic centimeter per minute (sccm), and it is preferable that the reaction gas in step c') is supplied after being activated by generating plasma in a range of 50 to 1000W.
- the dielectric film may have an excellent deposition rate and high stress only by supplying lower-temperature and low-power plasma, and a content of carbon may be minimized, such that a high quality dielectric film having a Si-N bond may be formed.
- the dielectric film may be manufactured by generating plasma of 50 to 800W. More preferably, the dielectric film may be manufactured by generating low-power power plasma of 100 to 500W.
- the present invention provides a dielectric film containing a Si-N bond manufactured by using the amino-silyl amine compound as a precursor.
- the dielectric film uses the amino-silyl amine compound according to the present invention, such that the dielectric film may have high stress at a low temperature and a rapid deposition rate due to low activation energy of the amino-silyl amine compound, and non-volatile by-products are hardly generated, and thus, the dielectric film may have a high purity.
- reaction solution was slowly heated to room temperature and stirred for 12 hours. Then, 500ml of tetrahydrofuran (O(C 2 H 2 ) 2 ) was added thereto.
- 203g (1.48mol) of chlorodimethyl dimethylaminosilane (ClSi(CH 3 ) 2 (N(CH 3 ) 2 )) synthesized by reacting dichloro dimethylsilane (Cl 2 Si(CH 3 ) 2 ) with 2 equivalents of dimethylamine in a quantitative scheme was slowly added to the reaction solution while maintaining a temperature at -20°C. After the addition, the reaction solution was slowly heated, and stirred for 12 hours while maintaining the temperature at 65°C.
- the produced white solid was removed by filtering the reaction mixture after the reaction was terminated, thereby obtaining a filtrate.
- a solvent was removed from this filtrate under reduced pressure, and 208g (0.89mol) of dimethylaminodimethylsilyl bisdimethylsilyl amine (((CH 3 ) 2 SiH) 2 N(Si(CH 3 ) 2 (N(CH 3 ) 2 )) was obtained with a yield of 60% through distillation under reduced pressure.
- a vapor pressure of dimethylaminodimethylsilyl bisdimethylsilyl amine ((CH 3 ) 2 SiH) 2 N(Si(CH 3 ) 2 (N(CH 3 ) 2 )) was measured and thermogravimetric analysis thereof was performed, and the results were illustrated in FIGS. 1 and 2.
- a dielectric film containing a Si-N bond was formed at a silicon substrate temperature of 300°C and plasma of 400W using a composition for silicon-containing dielectric film deposition containing the compound of Example 1 in a general plasma enhanced atomic layer deposition (PEALD) apparatus using plasma enhanced atomic layer deposition (PEALD).
- PEALD plasma enhanced atomic layer deposition
- a mixture in which nitrogen (N 2 ) and ammonia (NH 3 ) were mixed at a ratio of 200:30 was used as the reaction gas, and argon, which is inert gas, was used as purge gas.
- argon which is inert gas
- a thickness of the dielectric film containing a Si-N bond deposited by the method of Example 2 was measured by ellipsometer and transmission electron microscope (TEM), and components of the dielectric film (silicon nitride film) were analyzed using infrared spectroscopy (IR), Auger electron spectroscopy (AES), and secondary ion mass spectrometer (SIMS). The results were illustrated in Table 2.
- FIGS. 5 and 6 illustrate results obtained by analyzing the dielectric film containing a Si-N bond deposited by the method of Example 2 and compositions thereof using infrared spectroscopy and Auger electron spectroscopy, respectively.
- Molecular vibration of Si-N was observed in a range of 850 to 868cm -1 in infrared spectra, and as a result of Auger electron spectroscopy, it was confirmed that a ratio of Si and N was in a range of 0.68 to 0.84.
- a high quality dielectric film containing a Si-N bond in which a content of carbon was less than 1% was formed.
- a dielectric film containing a Si-N bond was formed at a silicon substrate temperature of 300°C and plasma of 100W using a composition for silicon-containing dielectric film deposition containing the compound of Example 1 in a general plasma enhanced atomic layer deposition (PEALD) apparatus using plasma enhanced atomic layer deposition (PEALD).
- Nitrogen (N 2 ) was used as reaction gas, and argon, which is inert gas, was used as purge gas.
- argon which is inert gas
- a dielectric film containing a Si-N bond was formed at a silicon substrate temperature of 300°C and plasma of 200W using a composition for silicon-containing dielectric film deposition containing the compound of Example 1 in a general plasma enhanced atomic layer deposition (PEALD) apparatus using plasma enhanced atomic layer deposition (PEALD).
- Nitrogen (N 2 ) was used as reaction gas, and argon, which is inert gas, was used as purge gas.
- argon which is inert gas
- a dielectric film containing a Si-N bond was formed at a silicon substrate temperature of 300°C and plasma of 400W using a composition for silicon-containing dielectric film deposition containing the compound of Example 1 in a general plasma enhanced atomic layer deposition (PEALD) apparatus using plasma enhanced atomic layer deposition (PEALD).
- Nitrogen (N 2 ) was used as reaction gas, and argon, which is inert gas, was used as purge gas.
- argon which is inert gas
- a dielectric film was manufactured using low pressure chemical vapor deposition (LPCVD) under conditions at which a substrate temperature was 700°C, a dichlorosilane (DCS) flow rate was 40sccm, and an ammonia (NH 3 ) flow rate was 240sccm.
- LPCVD low pressure chemical vapor deposition
- DCS dichlorosilane
- NH 3 ammonia
- a dielectric film was manufactured using plasma enhanced chemical vapor deposition (PECVD) under conditions at which a substrate temperature was 400, plasma power was 500W, and a ratio of silane (SiH 4 ) and ammonia (NH 3 ) was 1:8.
- PECVD plasma enhanced chemical vapor deposition
- Table 1 a specific deposition method of a dielectric film was illustrated in Table 1, and components of the dielectric film were analyzed by the same method as in Example 2. The results were illustrated in the following Table 2.
- Example 2 Example 3 Example 4 Example 5 Precursor Heating Temperature (°C) 40 40 40 40 40 40 40 Substrate Temperature (°C) 300 300 300 300 300 Precursor Injection time (Second) 6 3 3 3 Purge Flow Rate (sccm) 1150 2000 2000 2000 Time (second) 20 16 16 16 Reaction Gas and Plasma Plasma Power (W) 400 100 200 400 N 2 Flow Rate (sccm) 200 400 400 400 NH 3 Flow Rate (sccm) 30 0 0 0 Time (second) 10 10 10 10 Purge Flow Rate (sccm) 1100 2000 2000 2000 Time (second) 15 12 12 12 12 The Number of Deposition Cycle Cycle 600 500 500 500 Deposition Method Deposition Conditions Substrate Temperature (°C) Plasma (W) Reaction Gas Comparative Example 1 LPCVD 770 - NH 3 Comparative Example 2 PECVD 400 500 NH 3
- ⁇ Wet etch rate Value compared with a resistance result (0.014 ⁇ /sec) of the dielectric film of Comparative Example 1 formed at a high temperature using the LPCVD against hydrogen fluoride (300:1 BOE solution).
- a deposition rate of the dielectric film containing a Si-N bond according to the present invention was in a range of 0.21 to 0.48 ⁇ /cycle.
- resistance of the dielectric films containing a Si-N bond manufactured in Examples 2 to 5 against hydrogen fluoride (300:1 BOE solution) was compared with that of the dielectric film of Comparative Example 1 formed at a high temperature using the LPCVD method against hydrogen fluoride (300:1 BOE solution), and as a result, it may be confirmed that the resistance of the dielectric films in Examples 2 to 5 was 2.89 to 28.06 times higher than that in Comparative Example 1, such that resistance against hydrogen fluoride was excellent.
- the composition for silicon-containing dielectric film deposition containing an amino-silyl amine compound through a plasma enhanced atomic layer deposition process, it was confirmed that the composition has a high utilization value in forming a high purity dielectric film containing Si-N bond capable of being deposited at a low temperature and low-power plasma, and may be usefully used across the whole application fields of the silicon-containing dielectric film.
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JP2016568508A JP6343032B2 (ja) | 2014-06-11 | 2015-06-04 | 新規なアミノシリルアミン化合物、および原子層蒸着法を用いたSi‐N結合を含む絶縁膜の製造方法 |
CN201580030728.1A CN106488924B (zh) | 2014-06-11 | 2015-06-04 | 新的氨基-甲硅烷基胺化合物以及通过使用原子层沉积制造包含Si-N键的介电膜的方法 |
US15/317,920 US9916974B2 (en) | 2014-06-11 | 2015-06-04 | Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer deposition |
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KR1020150069444A KR101875183B1 (ko) | 2014-06-11 | 2015-05-19 | 신규한 아미노실릴아민 화합물 및 원자층 증착법을 이용한 Si-N 결합을 포함하는 절연막의 제조방법 |
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