WO2024116933A1 - 半導体装置、および、半導体装置の製造方法 - Google Patents

半導体装置、および、半導体装置の製造方法 Download PDF

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Publication number
WO2024116933A1
WO2024116933A1 PCT/JP2023/041629 JP2023041629W WO2024116933A1 WO 2024116933 A1 WO2024116933 A1 WO 2024116933A1 JP 2023041629 W JP2023041629 W JP 2023041629W WO 2024116933 A1 WO2024116933 A1 WO 2024116933A1
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Prior art keywords
conductive member
semiconductor device
main surface
lead
thickness direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/041629
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English (en)
French (fr)
Japanese (ja)
Inventor
泰紀 高田
謙吾 柏木
幸太 伊勢
卓郎 中原
弘匡 河野
翔吾 白石
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Rohm Co Ltd
Original Assignee
Rohm Co Ltd
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Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2024561391A priority Critical patent/JPWO2024116933A1/ja
Publication of WO2024116933A1 publication Critical patent/WO2024116933A1/ja
Priority to US19/219,367 priority patent/US20250285944A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/041—Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/458—Materials of insulating layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/466—Tape carriers or flat leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
    • H10W72/07233—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/47—Solid or gel fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D80/00—Assemblies of multiple devices comprising at least one device covered by this subclass
    • H10D80/20—Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups H10D1/00 - H10D48/00, e.g. assemblies comprising capacitors, power FETs or Schottky diodes
    • H10D80/251—FETs covered by H10D30/00, e.g. power FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01365—Thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07332—Compression bonding, e.g. thermocompression bonding
    • H10W72/07333—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07335—Applying EM radiation, e.g. induction heating or using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/865—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • This disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.
  • Patent Document 1 discloses an example of a conventional semiconductor device.
  • the semiconductor device disclosed in this document comprises a semiconductor element, a conductive plate, a drive pad, a conductive member, and a sealing resin.
  • the semiconductor element is mounted on the conductive main surface of the conductive plate.
  • a main surface side drive electrode formed on the element main surface of the semiconductor element and the drive pad are connected by a conductive member.
  • the sealing resin seals the conductive plate, part of the drive pad, the semiconductor element, and the conductive member.
  • the semiconductor element is bonded to the conductive principal surface via a conductive bonding material such as solder.
  • the conductive member is also bonded to the principal surface drive electrode via a conductive bonding material such as solder. Therefore, two layers of conductive bonding material are interposed between the conductive principal surface and the conductive member. Because the shape of the conductive bonding material layers is not constant, the height position of the conductive member relative to the conductive principal surface (position in the thickness direction of the conductive plate) is not constant.
  • An object of the present disclosure is to provide a semiconductor device that is an improvement over conventional semiconductor devices.
  • an object of the present disclosure is to provide a semiconductor device that can control the height position of a conductive member relative to the main surface of a die pad, and a method for manufacturing the semiconductor device.
  • the semiconductor device provided by the first aspect of the present disclosure comprises a first lead including a die pad having a die pad main surface facing one side in the thickness direction, a semiconductor element having an element main surface facing one side in the thickness direction and a first electrode arranged on the element main surface and mounted on the die pad main surface, a second lead having a second main surface facing one side in the thickness direction and arranged spaced apart from the first lead in a first direction perpendicular to the thickness direction, a conductive member conductively joined to the first electrode and the second main surface, and a sealing resin covering the semiconductor element.
  • the conductive member is in direct contact with the second main surface.
  • the method for manufacturing a semiconductor device includes the steps of placing a semiconductor element on a first bonding member disposed on a main surface of a die pad, placing a second bonding member on a first electrode of the semiconductor element, placing a conductive member across the semiconductor element and a second lead disposed at a distance from the die pad, bonding the conductive member and the second lead in direct contact with each other, and solidifying the first bonding member and the second bonding member by heating.
  • the above configuration allows the height position of the conductive member relative to the main surface of the die pad in a semiconductor device to be controlled.
  • FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a bottom view of the semiconductor device shown in FIG.
  • FIG. 3 is a plan view (through the sealing resin) of the semiconductor device shown in FIG.
  • FIG. 4 is a right side view of the semiconductor device shown in FIG.
  • FIG. 5 is a left side view of the semiconductor device shown in FIG.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG.
  • FIG. 9 is a partially enlarged view of FIG. FIG.
  • FIG. 10 is a cross-sectional view showing a process of an example of a method for manufacturing the semiconductor device shown in FIG.
  • FIG. 11 is a cross-sectional view showing a process of an example of a method for manufacturing the semiconductor device shown in FIG.
  • FIG. 12 is a cross-sectional view showing a process of an example of a method for manufacturing the semiconductor device shown in FIG.
  • FIG. 13 is an enlarged cross-sectional view showing a semiconductor device according to a first modification of the first embodiment.
  • FIG. 14 is an enlarged cross-sectional view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 15 is a cross-sectional view showing a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 11 is a cross-sectional view showing a process of an example of a method for manufacturing the semiconductor device shown in FIG.
  • FIG. 12 is a cross-sectional view showing a process of an example of a method for manufacturing the semiconductor device shown in FIG.
  • FIG. 16 is a cross-sectional view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 17 is a cross-sectional view showing a semiconductor device according to a fifth embodiment of the present disclosure.
  • FIG. 18 is a cross-sectional view showing a step of an example of a method for manufacturing the semiconductor device shown in FIG.
  • FIG. 19 is a cross-sectional view showing a step of an example of a method for manufacturing the semiconductor device shown in FIG.
  • FIG. 20 is a cross-sectional view showing a step of an example of a method for manufacturing the semiconductor device shown in FIG.
  • FIG. 21 is a cross-sectional view showing a step of an example of a method for manufacturing the semiconductor device shown in FIG. FIG.
  • FIG. 22 is a cross-sectional view showing a semiconductor device according to a first modification of the fifth embodiment.
  • FIG. 23 is an enlarged cross-sectional view showing a semiconductor device according to a second modification of the fifth embodiment.
  • FIG. 24 is a cross-sectional view showing a step of an example of a method for manufacturing the semiconductor device shown in FIG. 25 is a cross-sectional view showing a step of an example of a method for manufacturing the semiconductor device shown in FIG. 26 is a cross-sectional view showing a step of an example of a method for manufacturing the semiconductor device shown in FIG.
  • an object A is formed on an object B" and “an object A is formed on an object B” include “an object A is formed directly on an object B” and “an object A is formed on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A is disposed on an object B” and “an object A is disposed on an object B” include “an object A is disposed directly on an object B” and “an object A is disposed on an object B with another object interposed between the object A and the object B" unless otherwise specified.
  • an object A is located on an object B includes “an object A is located on an object B in contact with an object B” and “an object A is located on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A overlaps an object B when viewed in a certain direction includes “an object A overlaps the entirety of an object B” and “an object A overlaps a part of an object B.”
  • the semiconductor device A10 includes a plurality of leads 1A, 1B, and 1C, a semiconductor element 2, an insulating portion 3, a metal laminate portion 4, a conductive member 5, conductive bonding materials 61 and 62, and a sealing resin 7.
  • FIG. 1 is a plan view showing semiconductor device A10.
  • FIG. 2 is a bottom view showing semiconductor device A10.
  • FIG. 3 is a plan view showing semiconductor device A10.
  • FIG. 4 is a right side view showing semiconductor device A10.
  • FIG. 5 is a left side view showing semiconductor device A10.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3.
  • FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. Note that FIG. 3 is a view seen through sealing resin 7 for ease of understanding.
  • the thickness direction of the semiconductor element 2 is referred to as the "thickness direction z.”
  • One direction perpendicular to the thickness direction z is referred to as the "first direction x.”
  • a direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y.”
  • the semiconductor device A10 is approximately rectangular when viewed in the thickness direction z.
  • the size of the semiconductor device A10 is not particularly limited.
  • Leads 1A, 1B, and 1C are formed, for example, by punching or bending a metal plate (lead frame).
  • the constituent material of leads 1A, 1B, and 1C is not particularly limited and may be, for example, copper (Cu) or nickel (Ni), or an alloy of these. In this embodiment, the constituent material of leads 1A, 1B, and 1C is Cu.
  • the thickness of leads 1A, 1B, and 1C is not particularly limited and may be, for example, 0.1 mm to 0.3 mm.
  • lead 1A is spaced apart from lead 1B and lead 1C on one side in the first direction x.
  • Lead 1B and lead 1C are aligned in the second direction y.
  • Leads 1A to 1C are spaced apart from each other when viewed in the thickness direction z.
  • Lead 1A is the largest and lead 1C is the smallest in size when viewed in the thickness direction z.
  • the lead 1A has a die pad 12 and a plurality of (four in this embodiment) first terminal portions 13.
  • the die pad 12 is rectangular when viewed in the thickness direction z, for example.
  • the die pad 12 has a main surface 121 and a back surface 122.
  • the main surface 121 faces one side in the thickness direction z
  • the back surface 122 faces the opposite side to the main surface 121 (the other side in the thickness direction z).
  • the semiconductor element 2 is mounted on the main surface 121.
  • the back surface 122 is exposed from the sealing resin 7.
  • the back surface 122 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).
  • the multiple first terminal portions 13 are located on one side in the first direction x (the right side in FIG. 6) with respect to the die pad 12. Each of the multiple first terminal portions 13 is connected to one side in the first direction x of the die pad 12 and extends to that side in the first direction x. The multiple first terminal portions 13 are arranged at intervals in the second direction y. Each of the multiple first terminal portions 13 has a back surface mounting portion 131.
  • the back surface mounting portion 131 faces the other side in the thickness direction z (the lower side in FIG. 6).
  • the back surface mounting portion 131 is exposed from the sealing resin 7.
  • the back surface mounting portion 131 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).
  • lead 1B has a pad portion 14, multiple (three in this embodiment) second terminal portions 15, and multiple (three in this embodiment) bent portions 16.
  • Pad portion 14 is located on one side in the thickness direction z (upper side in Figure 6) relative to the multiple second terminal portions 15.
  • Pad portion 14 is also located inward in the first direction x relative to the multiple second terminal portions 15, and is covered with sealing resin 7.
  • Pad portion 14 has a main surface 141 facing one side in the thickness direction z.
  • the second terminal portions 15 are located on the other side of the first direction x (left side in FIG. 6) with respect to the die pad 12 of the lead 1A. Each of the second terminal portions 15 extends to the other side of the first direction x. The second terminal portions 15 are arranged at intervals in the second direction y. Each of the second terminal portions 15 has a back surface mounting portion 151. The back surface mounting portion 151 faces the other side of the thickness direction z (lower side in FIG. 6). The back surface mounting portion 151 is exposed from the sealing resin 7. The back surface mounting portion 151 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown). The bent portions 16 connect the pad portion 14 and the second terminal portions 15 separately, and are bent when viewed in the second direction y.
  • the lead 1C has a pad portion 17, a second terminal portion 18, and a bent portion 19.
  • the pad portion 17 is located on one side of the second terminal portion 18 in the thickness direction z (the upper side in Figure 7).
  • the pad portion 17 is also located inward in the first direction x with respect to the second terminal portion 18, and is covered with sealing resin 7.
  • the second terminal portion 18 is located on the other side of the first direction x (left side in FIG. 7) with respect to the die pad 12 of the lead 1A.
  • the second terminal portion 18 extends to the other side of the first direction x.
  • the second terminal portions 15 of the lead 1B and the second terminal portion 18 of the lead 1C are arranged at intervals in the second direction y.
  • the second terminal portion 18 has a back surface mounting portion 181.
  • the back surface mounting portion 181 faces the other side of the thickness direction z (lower side in FIG. 7).
  • the back surface mounting portion 181 is exposed from the sealing resin 7.
  • the back surface mounting portion 181 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).
  • the bent portion 19 connects the pad portion 17 and the second terminal portion 18, and has a bent shape when viewed in the second direction y.
  • the semiconductor element 2 is an element that exerts the electrical function of the semiconductor device A10. There are no particular limitations on the type of semiconductor element 2, and in this embodiment, the semiconductor element 2 is configured as a transistor.
  • the semiconductor element 2 is mounted on the main surface 121 of the die pad 12. As shown in Figures 3 and 6 to 8, the semiconductor element 2 has an element body 20, a first electrode 21, a second electrode 22, and a third electrode 23.
  • the element body 20 is rectangular when viewed in the thickness direction z.
  • the element body 20 has an element principal surface 201 and an element rear surface 202.
  • the element principal surface 201 and the element rear surface 202 face opposite each other in the thickness direction z.
  • the element principal surface 201 faces the same side as the principal surface 121 of the die pad 12 in the thickness direction z (one side in the thickness direction z). Therefore, the element rear surface 202 faces the principal surface 121.
  • the first electrode 21 and the third electrode 23 are disposed on the main surface 201 of the element.
  • the second electrode 22 is disposed on the rear surface 202 of the element.
  • the first electrode 21, the second electrode 22, and the third electrode 23 are made of materials such as copper and aluminum (Al), or an alloy thereof.
  • the first electrode 21 is a source electrode
  • the second electrode 22 is a drain electrode
  • the third electrode 23 is a gate electrode.
  • the first electrode 21 covers most of the element principal surface 201. Specifically, the first electrode 21 is disposed in a region of the rectangular element principal surface 201 excluding the periphery and one corner (the lower right corner in FIG. 3). The first electrode 21 has a first electrode pad portion 212. The first electrode pad portion 212 is located inside the insulating portion 3 when viewed in the thickness direction z. The third electrode 23 is disposed in one corner (the lower right corner in FIG. 3) of the element principal surface 201. The second electrode 22 covers the entire surface (or almost the entire surface) of the element back surface 202.
  • the second electrode 22 is bonded to the main surface 121 of the die pad 12 via a conductive bonding material 62.
  • the conductive bonding material 62 electrically connects the die pad 12 and the second electrode 22.
  • the conductive bonding material 62 is, for example, solder.
  • the semiconductor device A10 includes a wire 65.
  • the wire 65 is conductively joined to the third electrode 23 and the pad portion 17 of the lead 1C.
  • the wire 65 conductively connects the third electrode 23 and the lead 1C.
  • the insulating portion 3 is disposed across the first electrode 21 and the element main surface 201.
  • the insulating portion 3 is annular and overlaps with the outer periphery of the first electrode 21 when viewed in the thickness direction z.
  • the outer edge of the insulating portion 3 is located near the outer periphery of the element main surface 201 when viewed in the thickness direction z.
  • the region located inside the inner edge of the insulating portion 3 when viewed in the thickness direction z is the first electrode pad portion 212.
  • the insulating portion 3 is configured, for example, by laminating a plurality of insulating layers.
  • the insulating portion 3 is configured, for example, by laminating an upper insulating layer made of a resin material on a lower insulating layer made of a nitride.
  • nitrides that constitute the lower insulating layer include SiN, SiON, and SiO 2.
  • resin materials that constitute the upper insulating layer include polyimide resin.
  • the metal laminate 4 is disposed across the first electrode 21 and the insulating section 3, and has a configuration in which, for example, multiple metal layers are laminated.
  • the metal laminate 4 has a configuration in which, for example, a metal layer containing titanium (Ti), a metal layer containing nickel, and a metal layer containing silver (Ag) are laminated in this order.
  • the semiconductor device of the present disclosure may have a configuration that does not include the insulating section 3 and the metal laminate 4.
  • the conductive member 5 is conductively joined to the first electrode 21 of the semiconductor element 2 and the lead 1B.
  • the conductive member 5 is made of a metal plate material (deformed strip) having a thickness that varies in parts.
  • the metal is copper (Cu) or a copper alloy.
  • the material of the conductive member 5 is the same as the material of the lead 1B, which is Cu.
  • the conductive member 5 is a metal plate material that has been bent and punched.
  • the conductive member 5 has an element-side joint 51, a lead-side joint 52, and an intermediate portion 53.
  • the element-side joint 51 is a portion where the thickness (dimension in the thickness direction z) of the deformed strip is large, and the shape viewed in the thickness direction z is an elongated rectangle that is long in the second direction y.
  • the element-side joint 51 is conductively joined to the first electrode pad portion 212 of the first electrode 21 via a conductive joint material 61.
  • the conductive bonding material 61 electrically connects the element-side bonding portion 51 (conductive member 5) and the first electrode pad portion 212.
  • the conductive bonding material 61 is, for example, solder.
  • the element side bonding portion 51 has a main surface 511, a back surface 512, and an end surface 513.
  • the main surface 511 and the back surface 512 face opposite each other in the thickness direction z.
  • the main surface 511 faces the same side as the main surface 121 of the die pad 12 in the thickness direction z (one side in the thickness direction z).
  • the main surface 511 is exposed from the sealing resin 7.
  • the back surface 512 faces the same side as the back surface 122 of the die pad 12 in the thickness direction z (the other side in the thickness direction z).
  • the back surface 512 is bonded to the first electrode pad portion 212 of the semiconductor element 2.
  • the end surface 513 is connected to the main surface 511 and the back surface 512, and is sandwiched between the main surface 511 and the back surface 512 in the thickness direction z.
  • the end surface 513 is a surface facing one side in the first direction x. Note that the shape of the element-side joint portion 51 is not limited.
  • the lead-side joint 52 is conductively joined to the pad 14 of the lead 1B.
  • the lead-side joint 52 is directly joined to the main surface 141 of the pad 14.
  • the lead-side joint 52 is ultrasonically joined to the main surface 141 of the pad 14.
  • the lead-side joint 52 is appropriately bent in the second direction y and has a convex portion 521 located on the other side (lower side in the figure) in the thickness direction z than the surrounding area.
  • a solid-state bonding interface 59 exists between the convex portion 521 and the pad 14.
  • the solid-state bonding interface 59 is an interface that is generated by solid-state bonding of the convex portion 521 and the pad 14 by ultrasonic vibration and pressure applied in ultrasonic bonding.
  • the lead-side joint 52 may be joined to the main surface 141 of the pad 14 by other solid-state bonding such as diffusion bonding or thermocompression bonding.
  • the intermediate portion 53 is located between the element side joint portion 51 and the lead side joint portion 52 in the first direction x.
  • the intermediate portion 53 is connected to both the element side joint portion 51 and the lead side joint portion 52.
  • the sealing resin 7 covers the semiconductor element 2, the insulating portion 3, the metal laminate portion 4, the conductive member 5, and parts of the leads 1A, 1B, and 1C.
  • the sealing resin 7 is made of, for example, a black epoxy resin.
  • the sealing resin 7 has a resin main surface 71, a resin back surface 72, and resin side surfaces 73 to 76.
  • the resin main surface 71 and the resin back surface 72 face opposite sides in the thickness direction z.
  • the resin main surface 71 faces one side in the thickness direction z, and faces the same side as the element main surface 201 and the main surface 121.
  • the resin main surface 71 exposes the main surface 511 of the element side bonding portion 51 of the conductive member 5.
  • the resin back surface 72 faces the other side in the thickness direction z, and faces the same side as the element back surface 202 and the back surface 122.
  • the back surface 122 of the die pad 12, the back surface mounting portion 131 of each first terminal portion 13, the back surface mounting portion 151 of each second terminal portion 15, and the back surface mounting portion 181 of the second terminal portion 18 are exposed from the resin back surface 72.
  • Each of the resin side surfaces 73 to 76 is connected to the resin main surface 71 and the resin back surface 72, and is sandwiched between the resin main surface 71 and the resin back surface 72 in the thickness direction z.
  • the resin side surface 73 and the resin side surface 74 face opposite each other in the first direction x.
  • the resin side surface 73 faces one side of the first direction x, and the resin side surface 74 faces the other side of the first direction x.
  • the resin side surface 75 and the resin side surface 76 face opposite each other in the second direction y.
  • the resin side surface 75 faces one side of the second direction y, and the resin side surface 76 faces the other side of the second direction y. As shown in FIG.
  • each of the multiple first terminal portions 13 protrudes from the resin side surface 73.
  • a portion of each of the multiple second terminal portions 15 and the second terminal portion 18 protrudes from the resin side surface 74.
  • the resin side surfaces 73 to 76 are each slightly inclined with respect to the thickness direction z.
  • the shapes of the sealing resin 7 shown in Figures 1, 2, and 4 to 8 are examples. The shape of the sealing resin 7 is not limited to the illustrated shapes.
  • FIG. 10 to 12 is a cross-sectional view showing one step of the method for manufacturing the semiconductor device A10, and is a cross-sectional view similar to the cross-sectional view shown in Figure 6.
  • the lead frame 100 and the semiconductor element 2 shown in FIG. 10 are prepared.
  • the lead frame 100 is a plate-shaped material that will become the leads 1A, 1B, and 1C.
  • the lead frame 100 is formed by subjecting a metal plate to processes such as punching and bending. There are no limitations on the method for forming the lead frame 100. A description of the manufacturing method for the semiconductor element 2 will be omitted.
  • a conductive member 5 is prepared separately.
  • the conductive member 5 is formed by subjecting a deformed metal plate to processes such as bending and punching. There are no limitations on the method for forming the conductive member 5.
  • solder paste 60 is applied to the portion of the main surface 101 of the lead frame 100 that will become the main surface 121 of the die pad 12, and the semiconductor element 2 is placed on the solder paste 60.
  • solder paste 60 is applied onto the first electrode 21 of the semiconductor element 2.
  • the conductive member 5 is placed so as to straddle the semiconductor element 2 and the portion that will become the pad portion 14 of the lead frame 100.
  • the element side joint portion 51 is placed on the solder paste 60, and the convex portion 521 of the lead side joint portion 52 is placed in direct contact with the portion that will become the pad portion 14 of the lead frame 100.
  • the convex portion 521 of the lead-side joint 52 is joined to the portion that will become the pad portion 14 of the lead frame 100 by ultrasonic bonding. Specifically, the convex portion 521 is brought into direct contact with the portion that will become the pad portion 14, and ultrasonic vibrations are applied while the convex portion 521 is pressed against the portion, thereby forming a solid-state bonding interface 59 between the convex portion 521 and the portion that will become the pad portion 14, as shown in FIG. 12.
  • a reflow process is performed.
  • the reflow process melts the solder paste 60, and the molten solder solidifies by subsequent cooling.
  • the semiconductor element 2 is bonded to the portion of the lead frame 100 that will become the die pad 12 by the conductive bonding material 62.
  • the element-side bonding portion 51 of the conductive member 5 is bonded to the first electrode 21 by the conductive bonding material 61.
  • wire bonding of wire 65 is performed.
  • molding is performed to form sealing resin 7 that covers semiconductor element 2, insulating portion 3, metal laminate portion 4, conductive member 5, and part of lead frame 100.
  • lead frame 100 is appropriately cut to separate leads 1A, 1B, and 1C from one another.
  • the lead-side joint 52 of the conductive member 5 is directly joined to the main surface 141 of the pad portion 14. Since no joint material is interposed between the lead-side joint 52 and the main surface 141, the height position (position in the thickness direction z) of the conductive member 5 relative to the main surface 121 of the die pad 12 is determined by the height position of the main surface 141 of the pad portion 14. Therefore, in the semiconductor device A10, the height position of the conductive member 5 relative to the main surface 121 is controlled to a constant position regardless of the thickness dimension (dimension in the thickness direction z) of the conductive joint materials 61, 62.
  • the conductive member 5 By appropriately controlling the height position of the conductive member 5, it is possible to prevent the sealing resin 7 from being formed on the main surface 511 of the element-side joint 51. In addition, since the lead-side joint 52 is joined to the pad portion 14 before the reflow process, it is possible to prevent the conductive member 5 from being displaced due to rotation around the central axis extending in the thickness direction z when the solder paste 60 melts in the reflow process.
  • the lead-side joint 52 of the conductive member 5 is ultrasonically bonded to the main surface 141 of the pad portion 14. Therefore, the lead-side joint 52 and the pad portion 14 can be directly bonded to each other without any bonding material or the like being interposed between them.
  • the conductive member 5 is made of the same material as the lead 1B, which is Cu. Therefore, the lead-side joint 52 and the pad 14 can be firmly joined by ultrasonic bonding.
  • the main surface 511 of the element-side joint 51 of the conductive member 5 is exposed from the resin main surface 71. This allows the semiconductor device A10 to dissipate heat generated by the semiconductor element 2 from the main surface 511 of the conductive member 5. Furthermore, the back surface 122 of the die pad 12 is exposed from the resin back surface 72. This allows the semiconductor device A10 to dissipate heat generated by the semiconductor element 2 from the back surface 122 of the die pad 12. Therefore, the semiconductor device A10 can dissipate heat from both sides in the thickness direction z, and therefore has a higher heat dissipation effect than when heat is dissipated only from one side or only from the other side in the thickness direction z.
  • FIG. 13 shows a modified example of the semiconductor device A10 according to the first embodiment.
  • elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated explanations are omitted.
  • FIG. 13 is a diagram for explaining a semiconductor device A11 according to a first modified example of the first embodiment.
  • FIG. 13 is an enlarged cross-sectional view of the semiconductor device A11, and is a diagram corresponding to FIG. 9.
  • the pad portion 14 of the lead 1B according to this modified example has a plating layer 142 arranged on the main surface 141.
  • the constituent material of the plating layer 142 is, for example, silver (Ag), but is not limited thereto.
  • the lead-side joint portion 52 of the conductive member 5 according to this modified example has a plating layer 522 arranged on a contact surface 521a facing the other side of the thickness direction z of the convex portion 521.
  • the constituent material of the plating layer 522 is the same as that of the plating layer 142, and is silver (Ag) in this embodiment.
  • the bond between silver and silver is stronger than the bond between copper and copper. Therefore, the semiconductor device A11 can bond the lead-side joint portion 52 and the pad portion 14 more firmly than the semiconductor device A10.
  • FIGS. 14 to 26 show other embodiments of the present disclosure.
  • elements that are the same as or similar to those in the above embodiment are given the same reference numerals as those in the above embodiment.
  • Second embodiment 14 is a diagram for explaining a semiconductor device A20 according to a second embodiment of the present disclosure.
  • FIG. 14 is an enlarged cross-sectional view showing the semiconductor device A20, and corresponds to FIG. 9.
  • the semiconductor device A20 of this embodiment differs from the first embodiment in the method of bonding the lead-side bonding portion 52 of the conductive member 5 to the pad portion 14 of the lead 1B.
  • the configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of the first embodiment and the modified examples may be combined in any desired manner.
  • the lead side joint 52 of the conductive member 5 and the pad portion 14 of the lead 1B are joined by laser welding using laser light.
  • the lead side joint 52 has a weld mark 523 that reaches the inside of the pad portion 14.
  • the weld mark 523 is a weld mark formed by laser welding, and is a portion where a part of the lead side joint 52 and a part of the pad portion 14 are fused together. Note that the lead side joint 52 may have multiple weld marks 523.
  • the lead-side bonding portion 52 of the conductive member 5 is bonded in direct contact with the main surface 141 of the pad portion 14. Therefore, in the semiconductor device A20, like the semiconductor device A10, the height position of the conductive member 5 relative to the main surface 121 of the die pad 12 is controlled to a constant position. Furthermore, according to this embodiment, the lead-side bonding portion 52 of the conductive member 5 is bonded to the main surface 141 of the pad portion 14 by laser welding. Therefore, the lead-side bonding portion 52 and the pad portion 14 can be bonded in direct contact with each other without the need for a bonding material or the like therebetween. Furthermore, by adopting a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.
  • the method of joining the lead-side joint portion 52 of the conductive member 5 and the pad portion 14 of the lead 1B is not limited.
  • the lead-side joint portion 52 and the pad portion 14 need only be joined so as to be in direct contact with each other.
  • Third embodiment 15 is a diagram for explaining a semiconductor device A30 according to a third embodiment of the present disclosure.
  • FIG. 15 is a cross-sectional view showing the semiconductor device A30, and corresponds to FIG. 6.
  • the semiconductor device A30 of this embodiment differs from the first embodiment in that it includes a heat-conducting member 9 exposed from the resin main surface 71 of the sealing resin 7.
  • the configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of the first and second embodiments and the modified examples may be combined in any desired manner.
  • the semiconductor device A30 further includes a heat-conducting member 9.
  • the heat-conducting member 9 includes an insulating plate 9a and two metal layers 9b.
  • the insulating plate 9a is plate-shaped and has a rectangular shape, for example, when viewed in the thickness direction z.
  • the insulating plate 9a is made of a ceramic material with excellent thermal conductivity, and in this embodiment, the material is, for example, aluminum nitride (AlN).
  • AlN aluminum nitride
  • the shape and material of the insulating plate 9a are not limited.
  • the two metal layers 9b are disposed on the surface of the heat-conducting member 9 facing the thickness direction z. Each metal layer 9b has the same shape and size as the insulating plate 9a when viewed in the thickness direction z.
  • each metal layer 9b is not particularly limited, and may be, for example, copper (Cu), silver (Ag), gold (Au), or an alloy containing these. In this embodiment, the case of copper (Cu) will be described.
  • the heat-conducting member 9 is a so-called DBC (Direct Bonded Copper) substrate.
  • the DBC substrate is a substrate in which copper foil is bonded to both sides of a ceramic plate.
  • the heat conductive member 9 has a principal surface 91 and a rear surface 92.
  • the principal surface 91 and the rear surface 92 face opposite each other in the thickness direction z.
  • the principal surface 91 faces one side in the thickness direction z, and the rear surface 92 faces the opposite side to the principal surface 91 (the other side in the thickness direction z).
  • the rear surface 92 of the heat conductive member 9 is joined to the principal surface 511 of the element side joint 51 of the conductive member 5.
  • the principal surface 91 of the heat conductive member 9 is exposed from the sealing resin 7.
  • the heat-conducting member 9 is not limited to a DBC substrate.
  • the heat-conducting member 9 may be a so-called DPC (Direct Plated Copper) substrate in which copper plating is formed on both sides of a ceramic plate.
  • the heat-conducting member 9 may also be a plating layer made of copper, for example, or a thermally conductive material such as TIM (Thermal Interface Material).
  • the lead-side bonding portion 52 of the conductive member 5 is bonded in direct contact with the main surface 141 of the pad portion 14. Therefore, in the semiconductor device A30, like the semiconductor device A10, the height position of the conductive member 5 relative to the main surface 121 of the die pad 12 is controlled to a constant position. Furthermore, according to this embodiment, the main surface 91 of the heat conductive member 9 is exposed from the sealing resin 7. As a result, the semiconductor device A30 can dissipate heat generated by the semiconductor element 2 from the main surface 91 of the heat conductive member 9 via the conductive member 5. Furthermore, by adopting a configuration in common with the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.
  • FIG. 16 is a diagram for explaining a semiconductor device A40 according to a fourth embodiment of the present disclosure.
  • FIG. 16 is a cross-sectional view showing the semiconductor device A40, and corresponds to FIG. 6.
  • the semiconductor device A40 of this embodiment differs from the first embodiment in that the conductive member 5 is covered with the sealing resin 7 and is not exposed from the resin main surface 71.
  • the configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of the above first to third embodiments and each modified example may be combined in any desired manner.
  • the semiconductor device A40 has the conductive member 5 entirely covered with the sealing resin 7, and the main surface 511 of the element-side bonding portion 51 is not exposed from the resin main surface 71 of the sealing resin 7. Furthermore, the semiconductor device A40 does not have the heat-conducting member 9 that the semiconductor device A30 has.
  • the lead-side bonding portion 52 of the conductive member 5 is bonded in direct contact with the main surface 141 of the pad portion 14. Therefore, in the semiconductor device A40, like the semiconductor device A10, the height position of the conductive member 5 relative to the main surface 121 of the die pad 12 is controlled to a constant position. Furthermore, by adopting a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.
  • FIG. 17 to 21 are diagrams for explaining a semiconductor device A50 according to a fifth embodiment of the present disclosure.
  • FIG. 17 is a cross-sectional view showing the semiconductor device A50, and corresponds to FIG. 6.
  • FIGS. 18 to 21 are cross-sectional views showing a step of an example of a manufacturing method for the semiconductor device A50.
  • the semiconductor device A50 of this embodiment is different from the first embodiment in that it includes a position defining member 8 that defines the height position of the conductive member 5 from the main surface 121 of the die pad 12.
  • the configuration and operation of other parts of this embodiment are similar to those of the first embodiment. Note that the parts of the first to fourth embodiments and the modified examples may be combined in any combination.
  • the semiconductor device A50 includes a positioning member 8.
  • the positioning member 8 is made of an insulating material and is in contact with the conductive member 5 and the main surface 121 of the die pad 12.
  • the positioning member 8 is made of, for example, a synthetic resin. The type of synthetic resin is not limited.
  • the positioning member 8 is disposed on the opposite side of the semiconductor element 2 from the lead 1B in the first direction x.
  • the positioning member 8 is L-shaped when viewed in the second direction y, and includes a first part 81 and a second part 82.
  • the second part 82 is plate-shaped extending in the first direction x, and an end face 82a facing the other side in the first direction x is in contact with and joined to the end face 513 of the element-side joint 51.
  • the positioning member 8 in contact with the end face 513 of the element-side joint 51 may be formed by injecting molten resin material into a mold and solidifying it.
  • the first part 81 is a plate extending in the thickness direction z, and one end of the first part 81 in the thickness direction z is connected to one end of the second part 82 in the first direction x.
  • the end face 81a of the first part 81 facing the other side of the thickness direction z is in contact with the main surface 121 of the die pad 12.
  • the positioning member 8 and the conductive member 5 are first bonded and fixed together. Then, the conductive member 5 is placed so that the end face 81a of the first part 81 is in contact with the main surface 121 of the die pad 12, and the lead side bonding part 52 is bonded to the pad part 14, and then the conductive bonding materials 61, 62 are solidified. As a result, the end face 81a of the first part 81 is fixed in contact with the main surface 121 of the die pad 12.
  • the material of the positioning member 8 is not limited to synthetic resin, but may be any insulating material.
  • the material of the positioning member 8 may be ceramics.
  • the shape and arrangement of the positioning member 8 are not limited.
  • the semiconductor device A50 may include multiple positioning members 8. In this case, there are no limitations on how each positioning member 8 is arranged.
  • FIG. 18 is a cross-sectional view showing one step of the method for manufacturing semiconductor device A50, and is a cross-sectional view similar to the cross-sectional view shown in Figure 6.
  • the position determining member 8 is formed, for example, by injection molding using a mold. Note that the method for forming the position determining member 8 is not limited.
  • the positioning member 8 is joined to the conductive member 5 by thermocompression bonding. Specifically, the positioning member 8 and the conductive member 5 are heated and, at an appropriate temperature, pressure is applied to bring the end face 82a into close contact with the end face 513, causing plastic deformation in the positioning member 8, thereby joining them. This fixes the positioning member 8 and the conductive member 5 together.
  • the conductive member 5 may be placed in a mold, and molten resin material may be injected and solidified to form the positioning member 8 in contact with the end face 513 of the conductive member 5.
  • solder paste 60 is applied to the portion of the main surface 101 of the lead frame 100 that will become the main surface 121 of the die pad 12, and the semiconductor element 2 is placed on top (see FIG. 10).
  • solder paste 60 is applied onto the first electrode 21 of the semiconductor element 2.
  • the conductive member 5 is placed so as to straddle the semiconductor element 2 and the portion that will become the pad portion 14 of the lead frame 100.
  • the element side joint portion 51 is placed on the solder paste 60, and the convex portion 521 of the lead side joint portion 52 is placed in direct contact with the portion that will become the pad portion 14 of the lead frame 100.
  • the conductive member 5 is also placed so that the end face 81a of the integral positioning member 8 is in contact with the portion of the main surface 101 of the lead frame 100 that will become the main surface 121 of the die pad 12.
  • the convex portion 521 of the lead-side joint 52 is joined to the portion that will become the pad portion 14 of the lead frame 100 by ultrasonic bonding.
  • a solid-state bonding interface 59 is formed between the convex portion 521 and the portion that will become the pad portion 14.
  • the subsequent process is the same as in the first embodiment.
  • the lead-side bonding portion 52 of the conductive member 5 is bonded in direct contact with the main surface 141 of the pad portion 14. Therefore, in the semiconductor device A50, like the semiconductor device A10, the height position of the conductive member 5 relative to the main surface 121 of the die pad 12 is controlled to a constant position. Furthermore, by adopting a configuration common to the semiconductor device A10, the semiconductor device A50 achieves the same effects as the semiconductor device A10.
  • the semiconductor device A50 includes a positioning member 8.
  • the positioning member 8 is fixed integrally with the conductive member 5 by bonding the end face 82a of the second portion 82 to the end face 513 of the element-side bonding portion 51.
  • the conductive member 5 is fixed in a state in which the end face 81a of the integrated positioning member 8 is in contact with the main surface 121 of the die pad 12.
  • the height position (position in the thickness direction z) of the conductive member 5 relative to the main surface 121 is further defined to a position according to the dimension of the positioning member 8 in the thickness direction z.
  • the height position of the element-side bonding portion 51 is defined to a more accurate position compared to a case in which the positioning member 8 is not provided.
  • the semiconductor device A50 can control the height position of the conductive member 5 relative to the main surface 121 to a more accurate position.
  • the positioning member 8 has a first portion 81 extending in the thickness direction z and a second portion 82 extending in the first direction x. Therefore, the positioning member 8 can contact the end face 82a of the second portion 82 with the end face 513 of the element-side bonding portion 51, while contacting the end face 81a of the first portion 81 with the main surface 121 of the die pad 12.
  • the positioning member 8 is disposed on the opposite side of the semiconductor element 2 from the lead 1B in the first direction x.
  • the lead side bonding portion 52 of the conductive member 5 is bonded to the pad portion 14 of the lead 1B.
  • the height position of the conductive member 5 is determined by the positioning member 8 on one side of the semiconductor element 2 in the first direction x, and is determined by the height position of the main surface 141 of the pad portion 14 on the other side of the semiconductor element 2. Since the height position of the semiconductor device A50 is determined on both sides of the semiconductor element 2 in the first direction x, the height position of the conductive member 5 can be controlled more reliably compared to a case in which the positioning positions of the positioning members 8 are different.
  • FIGS. 22 to 26 show modified examples of the semiconductor device A50 according to the fifth embodiment.
  • elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated descriptions will be omitted.
  • FIG. 22 is a diagram for explaining a semiconductor device A51 according to a first modified example of the fifth embodiment.
  • FIG. 22 is a cross-sectional view of the semiconductor device A51, and is a diagram corresponding to FIG. 6.
  • the semiconductor device A51 according to this modified example does not include a position defining member 8. In this modified example, the position defining member 8 is removed during the manufacturing process. Therefore, the configuration of the semiconductor device A51 is similar to that of the semiconductor device A10 according to the first embodiment.
  • the manufacturing method of the semiconductor device A51 is similar to that of the semiconductor device A50 according to the fifth embodiment up to the process of solidifying the solder paste 60 by reflow processing.
  • the manufacturing method of the semiconductor device A51 includes a process of removing the position defining member 8 before wire bonding of the wire 65.
  • the position defining member 8 is made of a thermoplastic resin. Examples of thermoplastic resins include polyethylene and polypropylene.
  • the position defining member 8 is dissolved and removed by an organic solvent. The position defining member 8 may be removed by other methods.
  • the semiconductor device A51 includes a positioning member 8 when the conductive member 5 is bonded to the first electrode 21 and the pad portion 14. Therefore, like the semiconductor device A50, the semiconductor device A51 can more accurately control the height position of the conductive member 5 relative to the main surface 121. Furthermore, according to this modified example, the semiconductor device A51 does not include the positioning member 8 in the finished product. Therefore, in the semiconductor device A51, no voids are formed at the boundary between the positioning member 8 and the sealing resin 7. This allows the semiconductor device A51 to prevent the occurrence of cracks due to voids at the boundary between the positioning member 8 and the sealing resin 7.
  • the position defining member 8 is made of a thermoplastic resin, but this is not limiting.
  • the position defining member 8 may be made of a water-soluble resin.
  • water-soluble resins include polyethylene oxide, polyvinyl alcohol, resol-type phenolic resin, methylolated urea resin, methylolated melamine resin, polyacrylamide, and carboxymethyl cellulose.
  • the position defining member 8 is dissolved and removed by water.
  • Figures 23 to 26 are diagrams for explaining a semiconductor device A52 according to a second modification of the fifth embodiment.
  • Figure 23 is a cross-sectional view of the semiconductor device A52, and corresponds to Figure 6.
  • Figures 24 to 26 are cross-sectional views showing a step of an example of a manufacturing method for the semiconductor device A52.
  • the shapes of the position defining member 8 and the conductive member 5 are different from those of the semiconductor device A50.
  • the conductive member 5 further includes a protrusion 54.
  • the protrusion 54 protrudes from the end face 513 of the element-side joint 51 to one side in the first direction x.
  • the protrusion 54 includes a second back surface 542 that faces the same side in the thickness direction z as the back surface 512 (the other side in the thickness direction z).
  • the positioning member 8 does not include the second portion 82, and is composed only of a plate-like first portion 81 extending in the thickness direction z.
  • the end surface 81a of the positioning member 8 facing the other side in the thickness direction z is in contact with and bonded to the main surface 121 of the die pad 12.
  • the bonding method is not limited, but examples include thermocompression bonding in which the positioning member 8 and the die pad 12 (lead frame 100) are heated and pressure is applied to bond them together.
  • the positioning member 8 in contact with the main surface 121 of the die pad 12 may be formed by injecting a molten resin material into a mold and solidifying it.
  • the end surface 81b of the positioning member 8 facing one side in the thickness direction z is in contact with the second back surface 542 of the protruding portion 54 of the conductive member 5.
  • the positioning member 8 is in contact with the main surface 121 of the die pad 12 and the second back surface 542 of the conductive member 5.
  • FIG. 24 is a cross-sectional view showing one step of the method for manufacturing semiconductor device A52, and is a cross-sectional view similar to the cross-sectional view shown in Figure 6.
  • the lead frame 100 and positioning member 8 shown in FIG. 24 are prepared.
  • the positioning member 8 is bonded by thermocompression to the portion of the main surface 101 of the lead frame 100 that will become the main surface 121 of the die pad 12. This fixes the positioning member 8 and the die pad 12 (lead frame 100) together.
  • the positioning member 8 in contact with the main surface 101 of the lead frame 100 may be formed by placing the lead frame 100 in a mold and injecting and solidifying molten resin material.
  • a conductive member 5 and a semiconductor element 2 are prepared separately.
  • solder paste 60 is applied to the portion of the main surface 101 of the lead frame 100 that will become the main surface 121 of the die pad 12, and the semiconductor element 2 is placed on the solder paste 60.
  • solder paste 60 is applied to the first electrode 21 of the semiconductor element 2.
  • the conductive member 5 is placed so as to straddle the semiconductor element 2 and the portion that will become the pad portion 14 of the lead frame 100.
  • the element side joint portion 51 is placed on the solder paste 60, and the convex portion 521 of the lead side joint portion 52 is placed in direct contact with the portion that will become the pad portion 14 of the lead frame 100.
  • the conductive member 5 is also placed so that the second back surface 542 of the protruding portion 54 is in contact with the end surface 81b of the positioning member 8 that is integral with the lead frame 100. Subsequent processing is the same as in the case of the semiconductor device A50 of the fifth embodiment.
  • the semiconductor device A52 includes a positioning member 8.
  • the end surface 81a of the positioning member 8 is bonded to the main surface 121 of the die pad 12 and fixed integrally with the die pad 12.
  • the conductive member 5 is fixed in a state in which the second back surface 542 of the protruding portion 54 is in contact with the end surface 81b of the positioning member 8 which is integral with the die pad 12 (lead frame 100).
  • the height position (position in the thickness direction z) of the conductive member 5 relative to the main surface 121 is determined to a position according to the dimension in the thickness direction z of the positioning member 8.
  • the semiconductor device A52 can control the height position of the conductive member 5 relative to the main surface 121 to a more accurate position, as in the case of the semiconductor device A50. Furthermore, according to this embodiment, the positioning member 8 extends in the thickness direction z. Therefore, the positioning member 8 can contact the end surface 81a with the main surface 121 of the die pad 12 while contacting the end surface 81b with the second back surface 542 of the protruding portion 54.
  • the position determining member 8 is fixed integrally with the die pad 12 has been described above, but this is not limited to the above.
  • the end face 81b of the position determining member 8 may first be joined to the second back surface 542 of the protruding portion 54 to fix the position determining member 8 and the conductive member 5 together.
  • the conductive member 5 may not include the protruding portion 54, and the element-side joint portion 51 may extend to one side of the semiconductor element 2 in the first direction x, with the position determining member 8 contacting the back surface 512.
  • the semiconductor device and the method for manufacturing the semiconductor device according to the present disclosure are not limited to the above-mentioned embodiment.
  • the specific configuration of each part of the semiconductor device according to the present disclosure and the specific processing of each step of the method for manufacturing the semiconductor device according to the present disclosure can be freely designed in various ways.
  • a first lead (1A) including a die pad (12) having a die pad main surface (121) facing one side in a thickness direction (z); a semiconductor element (2) having an element main surface (201) facing one side in the thickness direction and a first electrode (21) disposed on the element main surface and mounted on the die pad main surface; a second lead (1B) having a second main surface (141) facing one side in the thickness direction and spaced apart from the first lead in a first direction (x) perpendicular to the thickness direction; A conductive member (5) conductively joined to the first electrode and the second main surface; A sealing resin (7) for covering the semiconductor element; Equipped with The semiconductor device (A1), wherein the conductive member is in direct contact with the second lead.
  • Appendix 2 The semiconductor device according to claim 1, wherein a solid-state welded interface (59) exists between the conductive member and the second lead. Supplementary Note 3. (Second embodiment, FIG. 14) 2. The semiconductor device according to claim 1, wherein the conductive member has a weld mark (523) that reaches into the inside of the second lead. Appendix 4. 4. The semiconductor device according to claim 1, wherein the conductive member and the second lead are made of the same material. Appendix 5. 5. The semiconductor device according to claim 1, wherein a constituent material of the conductive member and the second lead contains Cu. Appendix 6. The second lead includes a pad portion (14) covered with the sealing resin and a terminal portion (15) partially exposed from the sealing resin, 6.
  • Appendix 7. The conductive member has a conductive member main surface (511) facing one side in the thickness direction, 7.
  • Supplementary Note 8. (Third embodiment, FIG. 15)
  • the heat conductive member (9) is further provided, the heat conductive member being joined to the conductive member.
  • the conductive member has a conductive member main surface facing one side in the thickness direction, 7.
  • the semiconductor device according to claim 1, wherein the heat-conducting member is joined to a main surface of the conductive member and is exposed from the sealing resin.
  • the die pad further includes a die pad back surface (122) facing the other side in the thickness direction, 9.
  • the semiconductor device according to claim 1 wherein a rear surface of the die pad is exposed from the sealing resin.
  • Supplementary Note 10. (Fifth embodiment, FIGS. 17 to 26) 10.
  • Supplementary Note 11 (Fifth embodiment, FIG.
  • the conductive member includes a conductive member end surface (513) facing one side in the first direction,
  • the semiconductor device described in Appendix 10 wherein the position determination member has a first portion (81) in contact with the main surface of the die pad and extending in the thickness direction, and a second portion (82) in contact with an end surface of the conductive member and extending in the first direction.
  • Supplementary Note 12. (Second modified example of the fifth embodiment, FIG. 23)
  • the conductive member includes a conductive member back surface (542) facing the other side in the thickness direction, 11.
  • the semiconductor device according to claim 10, wherein the position defining member is in contact with a main surface of the die pad and a rear surface of the conductive member and extends in the thickness direction. Appendix 13.
  • FIG. 10 to 12 A step of placing a semiconductor element on a first bonding member (60) arranged on a main surface of the die pad; A step of disposing a second bonding member (60) on a first electrode of the semiconductor element; placing a conductive member across the semiconductor element and a second lead disposed away from the die pad; a joining step of directly contacting and joining the conductive member and the second lead; solidifying the first bonding member and the second bonding member by heating; A method for manufacturing a semiconductor device comprising the steps of: Appendix 14. 14. The method for manufacturing a semiconductor device according to claim 13, wherein the bonding step bonds the conductive member and the second lead by ultrasonic bonding. Appendix 15. 14. The method for manufacturing a semiconductor device according to claim 13, wherein the joining step joins the conductive member and the second lead by laser welding.

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PCT/JP2023/041629 2022-12-02 2023-11-20 半導体装置、および、半導体装置の製造方法 Ceased WO2024116933A1 (ja)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294384A (ja) * 2007-04-27 2008-12-04 Renesas Technology Corp 半導体装置
JP2013161941A (ja) * 2012-02-06 2013-08-19 Renesas Electronics Corp 半導体装置
JP2015149326A (ja) * 2014-02-05 2015-08-20 ローム株式会社 パワーモジュールおよびその製造方法
JP2016004796A (ja) * 2014-06-13 2016-01-12 ローム株式会社 パワーモジュールおよびその製造方法
WO2019082333A1 (ja) * 2017-10-26 2019-05-02 新電元工業株式会社 電子部品
JP2021015857A (ja) * 2019-07-10 2021-02-12 株式会社デンソー 半導体装置及び電子装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008294384A (ja) * 2007-04-27 2008-12-04 Renesas Technology Corp 半導体装置
JP2013161941A (ja) * 2012-02-06 2013-08-19 Renesas Electronics Corp 半導体装置
JP2015149326A (ja) * 2014-02-05 2015-08-20 ローム株式会社 パワーモジュールおよびその製造方法
JP2016004796A (ja) * 2014-06-13 2016-01-12 ローム株式会社 パワーモジュールおよびその製造方法
WO2019082333A1 (ja) * 2017-10-26 2019-05-02 新電元工業株式会社 電子部品
JP2021015857A (ja) * 2019-07-10 2021-02-12 株式会社デンソー 半導体装置及び電子装置

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