WO2024116899A1 - 半導体装置、および半導体装置の製造方法 - Google Patents

半導体装置、および半導体装置の製造方法 Download PDF

Info

Publication number
WO2024116899A1
WO2024116899A1 PCT/JP2023/041446 JP2023041446W WO2024116899A1 WO 2024116899 A1 WO2024116899 A1 WO 2024116899A1 JP 2023041446 W JP2023041446 W JP 2023041446W WO 2024116899 A1 WO2024116899 A1 WO 2024116899A1
Authority
WO
WIPO (PCT)
Prior art keywords
thickness direction
main surface
semiconductor device
conductive
heat dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/041446
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
卓郎 中原
謙吾 柏木
幸太 伊勢
泰紀 高田
弘匡 河野
翔吾 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2024561373A priority Critical patent/JPWO2024116899A1/ja
Publication of WO2024116899A1 publication Critical patent/WO2024116899A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages

Definitions

  • This disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.
  • Patent Document 1 discloses an example of a conventional semiconductor device.
  • the semiconductor device disclosed in the document comprises a semiconductor element, multiple leads, and sealing resin.
  • the semiconductor element is supported by the leads.
  • the semiconductor element is a transistor with a switching function.
  • An electrode (source electrode) of the semiconductor element on the lead is connected to the other leads by multiple wires.
  • the sealing resin covers a part of each lead, the semiconductor element, and the multiple wires.
  • the semiconductor device of Patent Document 1 by connecting multiple wires to the source electrode of the semiconductor element, it is suitable for passing a large current and can handle high output.
  • the output of the semiconductor device increases, there are effects such as an increase in the amount of heat generated by the semiconductor element, and there is a demand for improving the heat dissipation of the semiconductor device.
  • One of the objectives of this disclosure is to provide a semiconductor device that is an improvement over conventional devices.
  • one of the objectives of this disclosure is to provide a semiconductor device that is suitable for improving heat dissipation.
  • the semiconductor device provided by the first aspect of the present disclosure includes a first lead including a die pad portion having a first main surface facing one side in the thickness direction and a first back surface facing the other side in the thickness direction, a semiconductor element supported on the first main surface, a conductive portion disposed on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element, and at least a part of the die pad portion and a sealing resin covering the semiconductor element.
  • the conductive portion has a conductive main surface facing one side in the thickness direction.
  • the sealing resin has a resin main surface facing one side in the thickness direction, a resin back surface spaced from the resin main surface to the other side in the thickness direction and facing the other side in the thickness direction, and a recess recessed from the resin main surface to the other side in the thickness direction.
  • the recess is in contact with the conductive main surface. At least a part of the conductive main surface is exposed from the sealing resin.
  • the method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device including a first lead including a die pad portion having a first main surface facing one side in the thickness direction and a first back surface facing the other side in the thickness direction, a semiconductor element supported on the first main surface, a conductive portion disposed on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element, and at least a portion of the die pad portion and a sealing resin covering the semiconductor element.
  • the conductive portion has a conductive main surface facing one side in the thickness direction.
  • the sealing resin has a resin main surface facing one side in the thickness direction.
  • the method includes a step of forming a recess exposing at least a portion of the conductive main surface by irradiating the resin main surface with a laser.
  • the above configuration makes it possible to improve the heat dissipation of the semiconductor device.
  • FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a plan view (through a sealing resin) showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a cross-sectional view taken along line IV-IV in FIG.
  • FIG. 5 is a cross-sectional view taken along line VV in FIG.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a cross-sectional view showing a step of an example of a method for manufacturing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a plan view (through a sealing resin) showing the semiconductor
  • FIG. 8 is a cross-sectional view showing a step subsequent to that shown in FIG.
  • FIG. 9 is a cross-sectional view showing a step subsequent to that shown in FIG.
  • FIG. 10 is a cross-sectional view similar to FIG. 4, showing a semiconductor device according to a first modification of the first embodiment.
  • FIG. 11 is a cross-sectional view similar to FIG. 4, showing a semiconductor device according to a second modification of the first embodiment.
  • FIG. 12 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 13 is a plan view (through a sealing resin) showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. FIG.
  • FIG. 15 is a cross-sectional view taken along line XV-XV in FIG.
  • FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG.
  • FIG. 17 is a cross-sectional view showing a step of an example of a method for manufacturing a semiconductor device according to the second embodiment of the present disclosure.
  • FIG. 18 is a cross-sectional view showing a step subsequent to that shown in FIG.
  • FIG. 19 is a cross-sectional view showing a step subsequent to that shown in FIG.
  • FIG. 20 is a cross-sectional view similar to FIG. 14, showing a semiconductor device according to a first modification of the second embodiment.
  • an object A is formed on an object B" and “an object A is formed on an object B” include “an object A is formed directly on an object B” and “an object A is formed on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A is disposed on an object B” and “an object A is disposed on an object B” include “an object A is disposed directly on an object B” and “an object A is disposed on an object B with another object interposed between the object A and the object B" unless otherwise specified.
  • an object A is located on an object B includes “an object A is located on an object B in contact with an object B” and “an object A is located on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A overlaps an object B when viewed in a certain direction includes “an object A overlaps the entire object B” and “an object A overlaps a part of an object B.”
  • a surface A faces (one side or the other side of) direction B” is not limited to the case where the angle of surface A with respect to direction B is 90 degrees, but also includes the case where surface A is tilted with respect to direction B.
  • the semiconductor device A10 includes a first lead 1A, a second lead 1B, a third lead 1C, a semiconductor element 2, a conductive member 3, a heat dissipation portion 4, conductive bonding materials 61, 62, and 63, and a sealing resin 7.
  • FIG. 1 is a plan view showing semiconductor device A10.
  • FIG. 2 is a bottom view showing semiconductor device A10.
  • FIG. 3 is a plan view showing semiconductor device A10.
  • FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3.
  • FIG. 5 is a cross-sectional view taken along line V-V in FIG. 3.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3.
  • FIG. 3 is shown through sealing resin 7 for ease of understanding. In these figures, the through sealing resin 7 is shown by an imaginary line (two-dot chain line).
  • the thickness direction (direction when viewed in a plane) of the semiconductor element 2 is referred to as the "thickness direction z".
  • the direction perpendicular to the thickness direction z (the up-down direction in FIG. 1) is referred to as the "first direction x”.
  • the direction perpendicular to the thickness direction z and the first direction x (the left-right direction in FIG. 1) is referred to as the "second direction y”.
  • the semiconductor device A10 is approximately rectangular when viewed in the thickness direction z.
  • the upper side in FIG. 1 is referred to as the "x1 side of the first direction x" and the lower side in FIG.
  • the upper side in the figure is an example of “one side in the thickness direction” in this disclosure, and is called the “z1 side in the thickness direction z”
  • the lower side in the figure is an example of "the other side in the thickness direction” in this disclosure, and is called the “z2 side in the thickness direction z.”
  • the first lead 1A, the second lead 1B and the third lead 1C are formed, for example, by punching or bending a metal plate.
  • the materials constituting the first lead 1A, the second lead 1B and the third lead 1C are, for example, either copper (Cu) or nickel (Ni), or an alloy of these.
  • the thicknesses of the first lead 1A, the second lead 1B and the third lead 1C are, for example, 0.1 mm to 0.3 mm.
  • the first lead 1A is arranged at a distance from the second lead 1B and the third lead 1C in the first direction x.
  • the second lead 1B and the third lead 1C are aligned in the second direction y.
  • the first lead 1A, the second lead 1B and the third lead 1C are arranged at a distance from each other when viewed in the thickness direction z.
  • the size when viewed in the thickness direction z is the largest for the first lead 1A and the smallest for the third lead 1C.
  • the first lead 1A has a die pad portion 11 and multiple (four in this embodiment) terminal portions 12.
  • the die pad portion 11 is rectangular when viewed in the thickness direction z, for example.
  • the die pad portion 11 has a first main surface 111 and a first back surface 112.
  • the first main surface 111 faces the z1 side in the thickness direction z
  • the first back surface 112 faces the opposite side to the first main surface 111 (the z1 side in the thickness direction z).
  • the semiconductor element 2 is mounted on the first main surface 111.
  • the first back surface 112 is exposed from the sealing resin 7.
  • the first back surface 112 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).
  • the multiple terminal portions 12 are located on the x1 side of the die pad portion 11 in the first direction x. Each of the multiple terminal portions 12 is connected to the x1 side of the die pad portion 11 in the first direction x and extends to the x1 side of the first direction x. The multiple terminal portions 12 are arranged at intervals in the second direction y. Each of the multiple terminal portions 12 has a back surface mounting portion 121.
  • the back surface mounting portion 121 faces the z2 side of the thickness direction z (the lower side in FIG. 4).
  • the back surface mounting portion 121 is exposed from the sealing resin 7.
  • the back surface mounting portion 121 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).
  • the second lead 1B has a pad portion 13, multiple (three in this embodiment) terminal portions 14, and multiple (three in this embodiment) bent portions 15.
  • the pad portion 13 is located on the z1 side in the thickness direction z (upper side in Figure 4) with respect to the multiple terminal portions 14.
  • the pad portion 13 is also located inward in the first direction x with respect to the multiple terminal portions 14.
  • the multiple terminal portions 14 are located on the x2 side in the first direction x with respect to the die pad portion 11 of the first lead 1A.
  • the multiple terminal portions 14 are arranged at intervals in the second direction y.
  • Each of the multiple terminal portions 14 has a back surface mounting portion 141.
  • the back surface mounting portion 141 faces the z2 side in the thickness direction z (the lower side in FIG. 4).
  • the back surface mounting portion 141 is exposed from the sealing resin 7.
  • the back surface mounting portion 141 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).
  • the multiple bent portions 15 connect the pad portion 13 and the multiple terminal portions 14 separately, and are bent when viewed in the second direction y.
  • the third lead 1C has a pad portion 16, a terminal portion 17, and a bent portion 18.
  • the pad portion 16 is located on the z1 side of the terminal portion 17 in the thickness direction z (the upper side in Figure 5).
  • the pad portion 16 is also located inward in the first direction x with respect to the terminal portion 17.
  • the terminal portion 17 is located on the x2 side in the first direction x with respect to the die pad portion 11 of the first lead 1A.
  • the multiple terminal portions 14 of the second lead 1B and the terminal portion 17 of the third lead 1C are arranged at intervals in the second direction y.
  • the terminal portion 17 has a back surface mounting portion 171.
  • the back surface mounting portion 171 faces the z2 side in the thickness direction z (the lower side in FIG. 5).
  • the back surface mounting portion 171 is exposed from the sealing resin 7.
  • the back surface mounting portion 171 is a portion that is joined by a joining material such as solder when the semiconductor device A10 is mounted on a circuit board (not shown).
  • the bent portion 18 connects the pad portion 16 and the terminal portion 17, and has a bent shape when viewed in the second direction y.
  • the metal layer 19 is a metal plating that is laminated on the surfaces of the parts that are exposed from the sealing resin 7.
  • the material that makes up the metal plating is not particularly limited, and includes, for example, nickel, or nickel and palladium (Pd).
  • the semiconductor element 2 is an element that performs the electrical function of the semiconductor device A10.
  • the semiconductor element 2 is a power semiconductor chip with a switching function, such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
  • the semiconductor element 2 may also be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode.
  • the semiconductor element 2 has an element body 20, a source electrode 21, a drain electrode 22, and a gate electrode 23.
  • the element body 20 is rectangular when viewed in the thickness direction z.
  • the element body 20 has an element principal surface 201 and an element rear surface 202.
  • the element principal surface 201 and the element rear surface 202 face opposite each other in the thickness direction z.
  • the element principal surface 201 faces the same side as the first principal surface 111 of the die pad portion 11 in the thickness direction z. Therefore, the element rear surface 202 faces the first principal surface 111.
  • the source electrode 21 and the gate electrode 23 are disposed on the main surface 201 of the element.
  • the drain electrode 22 is disposed on the rear surface 202 of the element.
  • the constituent materials of the source electrode 21, the drain electrode 22 and the gate electrode 23 are, for example, copper or aluminum (Al), or an alloy of these.
  • the source electrode 21 covers most of the element's main surface 201. Specifically, the source electrode 21 is disposed in the rectangular element's main surface 201, excluding the periphery and one corner (the lower right corner in FIG. 3). The gate electrode 23 is disposed in one corner of the element's main surface 201 (the lower right corner in FIG. 3). The drain electrode 22 covers substantially the entire element's back surface 202.
  • the drain electrode 22 is electrically joined to the first main surface 111 (die pad portion 11) via a conductive bonding material 62.
  • the conductive bonding material 62 electrically connects the die pad portion 11 and the drain electrode 22.
  • the conductive bonding material 62 is, for example, solder.
  • the semiconductor device A10 includes a wire 68. As shown in FIG. 3 and FIG. 5, the wire 68 is electrically connected to the gate electrode 23 and the pad portion 16 of the third lead 1C. The wire 68 electrically connects the gate electrode 23 and the third lead 1C.
  • the conductive member 3 is joined to the source electrode 21 of the semiconductor element 2 and the second lead 1B.
  • the conductive member 3 is made of a metal plate material.
  • the conductive member 3 is made of, for example, copper or a copper alloy.
  • the conductive member 3 is, for example, a metal plate material that has been punched or bent.
  • the conductive member 3 has a conductive portion 31, a lead-side joint portion 32, and an intermediate portion 33. As shown in Figure 4, the conductive portion 31, the lead-side joint portion 32, and the intermediate portion 33 are appropriately bent and connected when viewed in the second direction y.
  • the conductive portion 31 is disposed on the z1 side of the semiconductor element 2 in the thickness direction z.
  • the conductive portion 31 is joined to the source electrode 21 via a conductive bonding material 61.
  • the conductive bonding material 61 conductively bonds the conductive portion 31 (conductive member 3) and the source electrode 21.
  • the conductive bonding material 61 is, for example, solder.
  • the conductive portion 31 has a conductive principal surface 311.
  • the conductive principal surface 311 faces the z1 side in the thickness direction z.
  • the lead-side joint 32 is joined to the pad 13 of the second lead 1B via a conductive adhesive 63.
  • the conductive adhesive 63 electrically connects the lead-side joint 32 (conductive member 3) and the pad 13 (second lead 1B).
  • the conductive adhesive 63 is, for example, solder.
  • the lead-side joint 32 has a convex portion located on the z2 side (lower side in the figure) in the thickness direction z from the surrounding area. When the pad 13 and the lead-side joint 32 are joined, the convex portion is pressed against the pad 13, and a sufficient amount of conductive adhesive 63 is present around the convex portion. This allows the electrical continuity between the lead-side joint 32 and the pad 13 to be properly maintained.
  • the intermediate portion 33 is located between the conductive portion 31 and the lead side joint portion 32 in the first direction x.
  • the intermediate portion 33 is connected to both the conductive portion 31 and the lead side joint portion 32.
  • the conductive portion 31 is conductive to the pad portion 13 (second lead 1B) via the intermediate portion 33 and the lead side joint portion 32.
  • the conductive member 3 forms a path for the main current switched by the semiconductor element 2.
  • the conductive portion 31 is thicker than the lead-side joint portion 32 and the intermediate portion 33.
  • the intermediate portion 33 is formed integrally with the conductive portion 31.
  • the intermediate portion 33 is connected to an end portion of the conductive portion 31 closer to the y2 side in the second direction y and closer to the z2 side in the thickness direction z, and extends to the x2 side in the first direction x.
  • the conductive member 3 having the conductive portion 31 is not limited to the above configuration.
  • the conductive member 3 may be configured such that the conductive portion 31, the lead-side joint portion 32, and the intermediate portion 33 each have a substantially uniform thickness.
  • the heat dissipation section 4 is disposed on the z1 side of the conductive section 31 in the thickness direction z.
  • the heat dissipation section 4 is filled in a recess 710 of the sealing resin 7, which will be described later.
  • the recess 710 is recessed from the resin main surface 71 of the sealing resin 7, which will be described later, to the z2 side in the thickness direction z, and is in contact with the conductive main surface 311.
  • the heat dissipation portion 4 is a metal plating layered on the conductive main surface 311.
  • the heat dissipation portion 4 is layered on the portion of the conductive main surface 311 that contacts the recess 710.
  • the material that the heat dissipation portion 4 is made from and examples of such materials include metal materials with high thermal conductivity, such as copper and silver (Ag).
  • the heat dissipation section 4 has a first heat dissipation surface 41.
  • the first heat dissipation surface 41 faces the z1 side in the thickness direction z.
  • the first heat dissipation surface 41 is exposed from the sealing resin 7.
  • the heat dissipation section 4 may not be filled in the recess 710. In this case, the portion of the conductive main surface 311 that contacts the recess 710 is exposed to the outside.
  • the sealing resin 7 covers a portion of each of the first lead 1A, the second lead 1B, and the third lead 1C, the semiconductor element 2, the wire 68, the conductive member 3, and a portion of the heat dissipation portion 4.
  • the sealing resin 7 is made of, for example, a black epoxy resin.
  • the sealing resin 7 is formed by molding.
  • the thermal conductivity of the heat dissipation portion 4, which is made of metal, is higher than the thermal conductivity of the sealing resin 7.
  • the sealing resin 7 has a resin main surface 71, a recess 710, a resin back surface 72 and resin side surfaces 73 to 76.
  • the resin main surface 71 and the resin back surface 72 face opposite sides in the thickness direction z.
  • the resin main surface 71 faces the z1 side in the thickness direction z, and faces the same side as the element main surface 201 and the first main surface 111.
  • the recess 710 is recessed from the resin main surface 71 toward the z2 side in the thickness direction z.
  • the depth of the recess 710 (dimension in the thickness direction z) is not particularly limited, and is, for example, about 10 to 300 ⁇ m.
  • the recess 710 contacts the conductive main surface 311 of the conductive section 31. In this embodiment, the recess 710 contacts a part of the conductive main surface 311.
  • the recess 710 is filled with the heat dissipation section 4 described above.
  • the resin main surface 71 is in the shape of a frame surrounding the first heat dissipation surface 41 of the heat dissipation section 4 in a plan view (viewed in the thickness direction z).
  • the first heat dissipation surface 41 of the heat dissipation section 4 is exposed from this resin main surface 71.
  • the first heat dissipation surface 41 is flush with the resin main surface 71.
  • the first heat dissipation surface 41 may be located on the z1 side of the resin main surface 71 in the thickness direction z. In this case, the heat dissipation section 4 protrudes from the resin main surface 71 to the z1 side in the thickness direction z.
  • the first heat dissipation surface 41 may also be located on the z2 side of the resin main surface 71 in the thickness direction z. In this case, the heat dissipation section 4 is in a position recessed from the resin main surface 71 to the z2 side in the thickness direction z.
  • the resin back surface 72 faces the z2 side in the thickness direction z, and faces the same side as the element back surface 202 and the first back surface 112. As shown in FIG. 2, the first back surface 112 of the die pad portion 11 is exposed from this resin back surface 72.
  • the first back surface 112 is, for example, flush with the resin back surface 72.
  • the back surface mounting portion 121 of each of the multiple terminal portions 12, the back surface mounting portion 141 of each of the multiple terminal portions 14, and the back surface mounting portion 171 of the terminal portion 17 are exposed from the resin back surface 72.
  • the first back surface 112 of the die pad portion 11 may be covered with the sealing resin 7, unlike the example shown in the figure.
  • Each of the resin side surfaces 73 to 76 is connected to the resin main surface 71 and the resin back surface 72, and is sandwiched between the resin main surface 71 and the resin back surface 72 in the thickness direction z.
  • the resin side surface 73 and the resin side surface 74 face opposite each other in the first direction x.
  • the resin side surface 73 faces the x1 side of the first direction x
  • the resin side surface 74 faces the x2 side of the first direction x.
  • the resin side surface 75 and the resin side surface 76 face opposite each other in the second direction y.
  • the resin side surface 75 faces the y1 side of the second direction y
  • the resin side surface 76 faces the y2 side of the second direction y.
  • each of the multiple terminal portions 12 protrudes from the resin side surface 73.
  • a portion of each of the multiple terminal portions 14 and the terminal portion 17 protrudes from the resin side surface 74.
  • the resin side surfaces 73 to 76 are each slightly inclined with respect to the thickness direction z.
  • the shapes of the sealing resin 7 shown in Figures 1, 2, and 4 to 6 are examples. The shape of the sealing resin 7 is not limited to the illustrated shapes.
  • FIG. 7 to 9 is a cross-sectional view showing one step in the method for manufacturing the semiconductor device A10, and is a cross-sectional view similar to the cross-section shown in Figure 4.
  • Figures 7 to 9 show the step of forming a recess 710 in the sealing resin 7 and filling the recess 710 with the heat dissipation section 4.
  • FIG. 7 shows the state after the sealing resin 7 has been formed by molding.
  • the sealing resin 7 covers the entire conductive principal surface 311.
  • a laser 9 is irradiated to a portion of the resin principal surface 71.
  • the laser 9 is irradiated to an area that overlaps with the conductive principal surface 311 when viewed in the thickness direction z.
  • the sealing resin 7 is partially removed.
  • the laser 9 is irradiated until the conductive principal surface 311 is exposed.
  • a recess 710 is formed, as shown in FIG. 8. With the recess 710 formed, a portion of the conductive principal surface 311 is exposed from the sealing resin 7.
  • the recess 710 is filled with the heat dissipation portion 4.
  • the recess 710 is filled with the heat dissipation portion 4 by plating the portion of the conductive main surface 311 exposed from the sealing resin 7.
  • the heat dissipation portion 4 is formed, for example, by electrolytic plating or electroless plating.
  • the heat dissipation portion 4 is laminated on the portion of the conductive main surface 311 exposed from the sealing resin 7, and a metal layer 19 is formed on the surface of the portion of the first lead 1A, the second lead 1B, and the third lead 1C exposed from the sealing resin 7 (the first back surface 112 of the die pad portion 11, the multiple terminal portions 12, etc.).
  • the semiconductor device A10 includes a semiconductor element 2 supported on the first main surface 111 of the die pad portion 11 (first lead 1A), a conductive portion 31 conductively joined to the z1 side of the thickness direction z of the semiconductor element 2, and a sealing resin 7.
  • the conductive portion 31 has a conductive main surface 311 facing the z1 side of the thickness direction z.
  • the sealing resin 7 has a resin main surface 71 facing the z1 side of the thickness direction z, and a recess 710 recessed from the resin main surface 71 to the z2 side of the thickness direction z.
  • the recess 710 is in contact with the conductive main surface 311, and a portion of the conductive main surface 311 in contact with the recess 710 is exposed from the sealing resin 7.
  • the recess 710 of the sealing resin 7 is filled with the heat dissipation section 4.
  • the heat dissipation section 4 has a first heat dissipation surface 41 facing the z1 side in the thickness direction z, and the first heat dissipation surface 41 is exposed from the resin main surface 71 of the sealing resin 7.
  • the thermal conductivity of the heat dissipation section 4 is higher than that of the sealing resin 7.
  • the semiconductor device A10 having the above configuration has a structure suitable for improving heat dissipation.
  • the first heat dissipation surface 41 of the heat dissipation section 4 is flush with the resin main surface 71 of the sealing resin 7. With this configuration, a heat sink or the like can be easily attached to the entire first heat dissipation surface 41. This is preferable for improving the heat dissipation of the semiconductor device A10.
  • the heat dissipation section 4 is formed by a metal plating layered on the conductive main surface 311. With this configuration, the heat dissipation section 4 can be appropriately filled in the portion of the conductive main surface 311 that contacts the recess 710.
  • Fig. 10 shows a semiconductor device according to a first modification of the first embodiment.
  • Fig. 10 is a cross-sectional view showing a semiconductor device A11 of this modification, and shows the same cross section as Fig. 4 shown in the above embodiment.
  • elements that are the same as or similar to the semiconductor device A10 of the above embodiment are given the same reference numerals as in the above embodiment, and descriptions thereof will be omitted as appropriate.
  • the thickness (dimension in the thickness direction z) of the heat dissipation section 4 is larger than that of the semiconductor device A10 of the above embodiment.
  • the first heat dissipation surface 41 of the heat dissipation section 4 is located on the z1 side of the thickness direction z from the resin main surface 71.
  • the heat dissipation section 4 protrudes from the resin main surface 71 to the z1 side of the thickness direction z.
  • the heat dissipation section 4 having such a configuration is obtained by adjusting the film thickness of the heat dissipation section 4 formed on the conductive main surface 311 by plating processing so that it is relatively large when the heat dissipation section 4 is formed.
  • the film thickness of the metal layer 19 formed on the first lead 1A, the second lead 1B, and the third lead 1C also becomes relatively large along with the formation of the heat dissipation section 4.
  • the semiconductor device A11 also achieves the same effect as the semiconductor device A10.
  • the heat dissipation section 4 protrudes from the resin main surface 71 to the z1 side of the thickness direction z as described above, and the first heat dissipation surface 41 is located on the z1 side of the thickness direction z.
  • the heat sink or the like can be more reliably attached to the entire first heat dissipation surface 41. This makes it possible to prevent a gap from being created between the first heat dissipation surface 41 and the heat sink or the like. This is preferable in terms of improving the heat dissipation of the semiconductor device A11.
  • Fig. 11 shows a semiconductor device according to a second modification of the first embodiment.
  • Fig. 11 is a cross-sectional view showing a semiconductor device A12 of this modification, and shows a cross section similar to that of Fig. 4 shown in the above embodiment.
  • the configuration of the heat dissipation section 4 filled in the recess 710 is different from that of the semiconductor device A10 of the above embodiment.
  • the heat dissipation section 4 is made of a thermally conductive material.
  • the thermally conductive material has a high thermal conductivity and is suitable for improving the heat dissipation in the semiconductor device A12.
  • the type and material of the thermally conductive material constituting the heat dissipation section 4 are not particularly limited, and can be appropriately selected from, for example, thermally conductive grease, thermally conductive paste, and thermally conductive sheet.
  • silver (Ag) paste and copper paste are preferably used as the thermally conductive material constituting the heat dissipation section 4.
  • the first heat dissipation surface 41 is flush with the resin main surface 71.
  • a heat sink or the like (not shown) is pressed against the first heat dissipation surface 41 and heated, so that the heat sink or the like is tightly bonded to the first heat dissipation surface 41.
  • This allows the heat generated in the semiconductor element 2 to be efficiently released from the opposite side of the die pad portion 11 (the z1 side in the thickness direction z) of the semiconductor element 2.
  • it provides the same effects as the semiconductor device A10 described above.
  • FIG. 12 is a plan view showing a semiconductor device A20 of this embodiment.
  • Fig. 13 is a plan view showing the semiconductor device A20 (through the sealing resin).
  • Fig. 14 is a cross-sectional view taken along line XIV-XIV in Fig. 13.
  • Fig. 15 is a cross-sectional view taken along line XV-XV in Fig. 13.
  • Fig. 16 is a cross-sectional view taken along line XVI-XVI in Fig. 13.
  • the configuration of the recess 710 and the configuration of the heat dissipation section 4 filled in the recess 710 are different from those of the semiconductor device A10 of the above embodiment.
  • the recess 710 is in contact with the entire conductive principal surface 311, and the entire conductive principal surface 311 is exposed from the sealing resin 7.
  • the recess 710 has a recess bottom surface 711.
  • the recess bottom surface 711 faces the z1 side in the thickness direction z, and is annular in shape surrounding the conductive principal surface 311 when viewed in the thickness direction z.
  • the recess bottom surface 711 is flush with the conductive principal surface 311, or is located on the z2 side of the conductive principal surface 311 in the thickness direction z. In the example shown, the recess bottom surface 711 is located on the z2 side of the conductive principal surface 311 in the thickness direction z.
  • the heat dissipation section 4 filled in the recess 710 is composed of a thermally conductive material.
  • a thermally conductive material there are no particular limitations on the type or material of the thermally conductive material that constitutes the heat dissipation section 4, and it is possible to use an appropriate material selected from, for example, thermally conductive grease, thermally conductive paste, and thermally conductive sheet.
  • silver paste or copper paste is preferably used as the thermally conductive material that constitutes the heat dissipation section 4.
  • the thermal conductivity of the heat dissipation section 4 is higher than that of the sealing resin 7.
  • the first heat dissipation surface 41 is flush with the resin main surface 71.
  • FIG. 17 to 19 is a cross-sectional view showing one step of the method for manufacturing the semiconductor device A20, and is a cross-sectional view similar to the cross-section shown in Figure 14.
  • Figures 17 to 19 show the step of forming a recess 710 in the sealing resin 7 and filling the recess 710 with the heat dissipation section 4.
  • the sealing resin 7 covers the entire conductive principal surface 311.
  • a laser 9 is irradiated to a part of the resin principal surface 71.
  • the laser 9 is irradiated to the area that overlaps with the entire conductive principal surface 311 and the area surrounding the conductive principal surface 311 in the thickness direction z.
  • the sealing resin 7 is partially removed. The irradiation of the laser 9 continues for a while even after the conductive principal surface 311 is exposed.
  • a part of the sealing resin 7 is further removed by the irradiation of the laser 9.
  • a recess 710 having a recess bottom surface 711 is formed.
  • the recess bottom surface 711 is located on the z2 side in the thickness direction z from the conductive principal surface 311.
  • the recess 710 is filled with the heat dissipation section 4.
  • the recess 710 is filled with the heat dissipation section 4 by applying a thermally conductive material such as silver paste or copper paste and then curing it.
  • a thermally conductive material is formed on the conductive main surface 311 and on the recess 710 surrounding it.
  • the semiconductor device A20 is manufactured in which the recess 710 is filled with the heat dissipation section 4.
  • the semiconductor device A20 includes a semiconductor element 2 supported on the first main surface 111 of the die pad portion 11 (first lead 1A), a conductive portion 31 conductively joined to the z1 side of the thickness direction z of the semiconductor element 2, and a sealing resin 7.
  • the conductive portion 31 has a conductive main surface 311 facing the z1 side of the thickness direction z.
  • the sealing resin 7 has a resin main surface 71 facing the z1 side of the thickness direction z, and a recess 710 recessed from the resin main surface 71 to the z2 side of the thickness direction z.
  • the recess 710 is in contact with the conductive main surface 311, and the entire conductive main surface 311 is exposed from the sealing resin 7.
  • the recess 710 of the sealing resin 7 is filled with the heat dissipation section 4.
  • the heat dissipation section 4 has a first heat dissipation surface 41 facing the z1 side in the thickness direction z, and the first heat dissipation surface 41 is exposed from the resin main surface 71 of the sealing resin 7.
  • the thermal conductivity of the heat dissipation section 4 is higher than that of the sealing resin 7.
  • the semiconductor device A20 with the above configuration has a structure suitable for improving heat dissipation.
  • the recess 710 has a recess bottom surface 711.
  • the recess bottom surface 711 faces the z1 side in the thickness direction z and is annular in shape surrounding the conductive main surface 311 as viewed in the thickness direction z.
  • the heat dissipation section 4 is filled in the recess 710 having the recess bottom surface 711. With this configuration, the size of the heat dissipation section 4 (first heat dissipation surface 41) in a plan view (as viewed in the thickness direction z) can be made larger. This is preferable in terms of improving heat dissipation.
  • the recess bottom surface 711 is located on the z2 side in the thickness direction z of the conductive main surface 311.
  • the heat dissipation section 4 is in contact with the entire conductive main surface 311 and a part of the side surface connected to the conductive main surface 311, and the contact area with the conductive section 31 can be made larger. This is more suitable for improving heat dissipation.
  • Fig. 20 shows a semiconductor device according to a first modification of the second embodiment.
  • Fig. 20 is a cross-sectional view showing a semiconductor device A21 of this modification, and shows a cross section similar to that of Fig. 14 shown in the second embodiment.
  • the semiconductor device A21 of this modified example further includes a heat sink 5.
  • the heat sink 5 is fixed to the first back surface 112 of the die pad portion 11.
  • the first back surface 112 of the die pad portion 11 is exposed from the sealing resin 7.
  • the first metal layer 52 of the heat sink 5, which will be described later, is bonded to this first back surface 112.
  • the terminal portion 12 connected to the die pad portion 11 is appropriately bent.
  • the heat sink 5 is disposed on the z2 side of the die pad portion 11 in the thickness direction z.
  • the heat sink 5 is fixed to the first back surface 112 (die pad portion 11).
  • the heat sink 5 includes an insulating layer 51, a first metal layer 52, and a second metal layer 53, which are stacked on top of each other.
  • the heat sink 5 is composed of, for example, a DBC (Direct Bonded Copper) substrate.
  • the insulating layer 51 is made of a material having a relatively high thermal conductivity, such as ceramics.
  • the material of the insulating layer 51 is not particularly limited, and examples of the material include alumina ( Al2O3 ), aluminum nitride ( AlN ), and silicon nitride ( Si3N4 ).
  • the insulating layer 51 may be made of an insulating resin sheet other than ceramics.
  • the insulating layer 51 is rectangular when viewed in the thickness direction z.
  • the first metal layer 52 is laminated on the z1 side of the insulating layer 51 in the thickness direction z.
  • the constituent material of the first metal layer 52 is not particularly limited and includes, for example, copper.
  • the constituent material of the first metal layer 52 may include aluminum instead of copper.
  • the first metal layer 52 is bonded to the first back surface 112 (die pad portion 11) via a bonding material 67.
  • the bonding material 67 may be conductive or insulating, and is, for example, solder.
  • the second metal layer 53 is laminated on the z2 side of the insulating layer 51 in the thickness direction z.
  • the constituent material of the second metal layer 53 is the same as the constituent material of the first metal layer 52.
  • the second metal layer 53 has a second heat dissipation surface 531.
  • the second heat dissipation surface 531 faces the z2 side in the thickness direction z.
  • the second heat dissipation surface 531 is exposed from the resin back surface 72 of the sealing resin 7. In the illustrated example, the second heat dissipation surface 531 is flush with the resin back surface 72.
  • the insulating layer 51, the first metal layer 52, and the second metal layer 53 are each rectangular when viewed in the thickness direction z.
  • the insulating layer 51 has a size larger than each of the first metal layer 52 and the second metal layer 53 when viewed in a plan view (when viewed in the thickness direction z).
  • the insulating layer 51 overlaps each of the first metal layer 52, the second metal layer 53, and the die pad portion 11 (first back surface 112) when viewed in the thickness direction z.
  • the thermal conductivity of the heat sink 5 (each of the insulating layer 51, the first metal layer 52, and the second metal layer 53) is higher than the thermal conductivity of the sealing resin 7.
  • the semiconductor device A21 of this modified example has the same effect as the semiconductor device A20.
  • the semiconductor device A21 further includes a heat sink 5.
  • the heat sink 5 is fixed to the first back surface 112 (the surface facing the z2 side in the thickness direction z) of the die pad portion 11.
  • the heat sink 5 has a second heat sink surface 531 facing the z2 side in the thickness direction z, and the second heat sink surface 531 is exposed from the resin back surface 72 of the sealing resin 7.
  • the thermal conductivity of the heat sink 5 is higher than that of the sealing resin 7.
  • the semiconductor device according to the present disclosure is not limited to the above-mentioned embodiment.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.
  • a first lead including a die pad portion having a first main surface facing one side in a thickness direction and a first back surface facing the other side in the thickness direction; a semiconductor element supported on the first main surface; a conductive portion that is disposed on one side of the semiconductor element in the thickness direction and is conductively joined to the semiconductor element; a sealing resin that covers at least a portion of the die pad portion and the semiconductor element, the conductive portion has a conductive main surface facing one side in the thickness direction, the sealing resin has a resin main surface facing one side in the thickness direction, a resin back surface spaced from the resin main surface to the other side in the thickness direction and facing the other side in the thickness direction, and a recessed portion recessed from the resin main surface to the other side in the thickness direction, the recess is in contact with the conductive main surface, At least a portion of the conductive main surface is exposed from the sealing resin.
  • Appendix 2 The semiconductor device according to claim 1, further comprising a heat dissipation portion filled in the recess and having a thermal conductivity higher than that of the sealing resin. Appendix 3. 3. The semiconductor device according to claim 2, wherein the heat dissipation portion is formed by a metal plating laminated on the conductive main surface. Appendix 4. 3. The semiconductor device according to claim 2, wherein the heat dissipation portion is made of a thermally conductive material. Appendix 5. the entire conductive main surface is exposed from the sealing resin, 5. The semiconductor device according to claim 4, wherein the recess is annularly shaped surrounding the conductive main surface when viewed in the thickness direction, and has a bottom surface of the recess facing one side in the thickness direction. Appendix 6. 6.
  • the heat dissipation portion has a first heat dissipation surface facing one side in the thickness direction, 7.
  • the semiconductor device according to claim 1, wherein the first heat dissipation surface is flush with the resin main surface or is located on one side of the resin main surface in the thickness direction.
  • the semiconductor device according to claim 1, wherein the conductive portion is made of a metal plate.
  • Appendix 9. 9.
  • the heat sink fixed to the first back surface and having a higher thermal conductivity than the sealing resin; the heat sink has a second heat dissipation surface facing the other side in the thickness direction, 10.
  • the heat sink includes an insulating layer that overlaps the die pad portion when viewed in the thickness direction.
  • the heat sink includes the insulating layer, a first metal layer stacked on one side of the insulating layer in the thickness direction, and a second metal layer stacked on the other side of the insulating layer in the thickness direction, the first metal layer is bonded to the first back surface; 12.
  • a method for manufacturing a semiconductor device comprising: a first lead including a die pad portion having a first main surface facing one side in a thickness direction and a first back surface facing the other side in the thickness direction; a semiconductor element supported on the first main surface; a conductive portion disposed on one side of the semiconductor element in the thickness direction and conductively joined to the semiconductor element; and a sealing resin covering at least a portion of the die pad portion and the semiconductor element, the conductive portion has a conductive main surface facing one side in the thickness direction, the sealing resin has a resin main surface facing one side in the thickness direction,
  • a method for manufacturing a semiconductor device comprising: forming a recess that exposes at least a portion of the conductive principal surface by irradiating the resin principal surface with a laser. Appendix 17. 17. The method for manufacturing a semiconductor device according to claim 16, further comprising the step of filling the recess with a heat dissipation portion.

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
PCT/JP2023/041446 2022-12-02 2023-11-17 半導体装置、および半導体装置の製造方法 Ceased WO2024116899A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024561373A JPWO2024116899A1 (https=) 2022-12-02 2023-11-17

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-193472 2022-12-02
JP2022193472 2022-12-02

Publications (1)

Publication Number Publication Date
WO2024116899A1 true WO2024116899A1 (ja) 2024-06-06

Family

ID=91323707

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/041446 Ceased WO2024116899A1 (ja) 2022-12-02 2023-11-17 半導体装置、および半導体装置の製造方法

Country Status (2)

Country Link
JP (1) JPWO2024116899A1 (https=)
WO (1) WO2024116899A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216564A (ja) * 2010-03-31 2011-10-27 Mitsubishi Electric Corp パワーモジュール及びその製造方法
JP2020065086A (ja) * 2011-04-04 2020-04-23 ローム株式会社 半導体装置
JP2020098938A (ja) * 2011-09-08 2020-06-25 ローム株式会社 半導体装置
JP2020145476A (ja) * 2011-10-31 2020-09-10 ローム株式会社 半導体装置
JP2022177252A (ja) * 2018-04-24 2022-11-30 ローム株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011216564A (ja) * 2010-03-31 2011-10-27 Mitsubishi Electric Corp パワーモジュール及びその製造方法
JP2020065086A (ja) * 2011-04-04 2020-04-23 ローム株式会社 半導体装置
JP2020098938A (ja) * 2011-09-08 2020-06-25 ローム株式会社 半導体装置
JP2020145476A (ja) * 2011-10-31 2020-09-10 ローム株式会社 半導体装置
JP2022177252A (ja) * 2018-04-24 2022-11-30 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
JPWO2024116899A1 (https=) 2024-06-06

Similar Documents

Publication Publication Date Title
JP3627738B2 (ja) 半導体装置
JP7733144B2 (ja) 半導体装置
JP3596388B2 (ja) 半導体装置
US12040301B2 (en) Semiconductor device
JP2000223634A (ja) 半導体装置
JP7827899B2 (ja) 半導体装置
JP2022143166A (ja) 半導体装置
JP7594950B2 (ja) 半導体装置
US20230411338A1 (en) Semiconductor device
CN111354710A (zh) 半导体装置及其制造方法
JP2013138087A (ja) 半導体モジュール及びその製造方法
JP3879361B2 (ja) 半導体装置の実装構造およびその実装方法
JP2006190728A (ja) 電力用半導体装置
WO2024116899A1 (ja) 半導体装置、および半導体装置の製造方法
JP2022143167A (ja) 半導体装置
JP7117960B2 (ja) パワーモジュール用基板およびパワーモジュール
JP5682511B2 (ja) 半導体モジュール
WO2024116743A1 (ja) 半導体装置
JP2006310609A (ja) 半導体装置
JP2021061331A (ja) 半導体装置
JP2025021309A (ja) 半導体装置
JP2003347507A (ja) 半導体パワーデバイス
WO2022259809A1 (ja) 半導体装置
WO2024252845A1 (ja) 半導体装置、および半導体装置の製造方法
JP2026035927A (ja) 半導体装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23897550

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2024561373

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23897550

Country of ref document: EP

Kind code of ref document: A1