WO2024087667A1 - 导电线膜和光伏电池组件 - Google Patents
导电线膜和光伏电池组件 Download PDFInfo
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- WO2024087667A1 WO2024087667A1 PCT/CN2023/101140 CN2023101140W WO2024087667A1 WO 2024087667 A1 WO2024087667 A1 WO 2024087667A1 CN 2023101140 W CN2023101140 W CN 2023101140W WO 2024087667 A1 WO2024087667 A1 WO 2024087667A1
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- Prior art keywords
- conductive
- grid line
- base film
- conductive coating
- electrode fine
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- 239000012528 membrane Substances 0.000 title abstract 10
- 239000011248 coating agent Substances 0.000 claims abstract description 43
- 238000000576 coating method Methods 0.000 claims abstract description 43
- 238000002844 melting Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 23
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 239000000155 melt Substances 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 66
- 238000004080 punching Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention belongs to the technical field of photovoltaic modules, and in particular, relates to a conductive wire film and a photovoltaic cell module.
- connection technologies for crystalline silicon photovoltaic cells mainly include high-temperature welding with welding strips, connection with conductive adhesives, and connection with conductive backplanes.
- the technology of high-temperature welding with welding strips is the most commonly used, and is mostly based on the superposition of double-sided, half-cell, and multi-main-grid cells, or on this basis, some special technologies are superimposed, such as welding strip shaping and stacking, special-shaped segmented welding strips, and patch welding.
- the basic principle of high-temperature welding with welding strips is to use a high-temperature welding process (generally above 230 degrees Celsius) to make the copper-based welding strip form a good ohmic contact with the main grid line on the surface of the photovoltaic cell, thereby realizing a series circuit of several cells to achieve the purpose of current collection and transmission.
- the main problems faced by this type of technology are: 1) The stress caused by high-temperature welding causes warping and deformation of the cell and the loss of broken pieces; 2) The contact resistance formed by high-temperature welding causes a large power loss of the cell.
- the technical problem solved by the present invention is: how to achieve connection between photovoltaic cells under low temperature conditions to avoid cell warping, breakage and power loss caused by high temperature welding.
- the present invention discloses a conductive wire film, which comprises a base film and a plurality of conductive grid lines arranged on the base film, wherein the plurality of conductive grid lines are parallel and spaced apart along the width direction of the base film, each of the conductive grid lines comprises a plurality of grid line segments extending and distributed along the length direction of the base film, each two adjacent grid line segments are spaced apart and not conductive to each other, the surfaces of the grid line segments have a conductive coating, the melting temperature range of the conductive coating is 130°C to 150°C, and the melting temperature range of the base film is 90°C to 110°C, wherein the conductive coating is used for electrically connecting or insulating the electrode fine grid lines of a battery cell, and the base film is used for adhering and fixing to the back side of the battery cell.
- the gate line segment comprises a conductive substrate and a conductive coating covering the conductive substrate.
- the thickness of the conductive coating layer near the contact portion of the electrode fine grid line is greater than that of the The thickness of the non-contact portion of the conductive coating away from the electrode fine wires.
- the conductive substrate is a copper substrate, and the conductive coating is a low-temperature tin-bismuth-silver alloy.
- the number of the conductive grid lines is an even number.
- the present application also discloses a photovoltaic cell assembly, which includes a conductive wire film and a plurality of cells stacked in sequence along the length direction of the base film, the base film being adhered to the back side of the cell, and the back side of the cell is provided with positive electrode fine grid lines and negative electrode fine grid lines that are alternately parallel along the length direction of the base film; each grid line segment covers two adjacent cells, the positive electrode fine grid line of one of the two adjacent cells is electrically connected to the grid line segment and the negative electrode fine grid line is insulated from the grid line segment, and the positive electrode fine grid line of the other of the two adjacent cells is insulated from the grid line segment and the negative electrode fine grid line is electrically connected to the grid line segment, so as to realize the series connection of the two adjacent cells.
- the interval between two adjacent gate line segments is located at the stacking position of two adjacent battery cells.
- the positive electrode fine grid line of one of the two adjacent battery cells directly contacts the conductive coating of the grid line segment to achieve electrical connection
- the negative electrode fine grid line of the other of the two adjacent battery cells directly contacts the conductive coating of the grid line segment to achieve electrical connection
- an insulating rubber layer is provided between the negative electrode fine grid line of one of the two adjacent battery cells and the conductive coating of the grid line segment to achieve insulation, and an insulating rubber layer is provided between the positive electrode fine grid line of the other of the two adjacent battery cells and the conductive coating of the grid line segment to achieve insulation.
- the conductive wire film and photovoltaic cell assembly disclosed in the present invention have the following technical effects:
- the conductive wire film has low-temperature bonding and conductivity.
- the base film adheres to the back of the battery cell at a relatively low temperature, limiting the stacking of the stacked battery cells.
- the conductive coating melts at a relatively low temperature and connects with the intersection of the fine grid lines of the battery cell electrodes, achieving the conductive ability of current collection and transmission, avoiding damage to the battery cell and power loss caused by high-temperature welding.
- FIG1 is a schematic diagram of a conductive wire film according to a first embodiment of the present invention.
- FIG2 is a schematic diagram of a photovoltaic cell assembly according to a second embodiment of the present invention.
- FIG3 is a schematic diagram of the circuit connection principle of the photovoltaic cell assembly according to the second embodiment of the present invention.
- FIG. 4 is another schematic diagram of a photovoltaic cell assembly according to the second embodiment of the present invention.
- the technical concept of the present application is first briefly described: in the back-contact cell string assembly process in the prior art, high-temperature welding technology with solder strips is usually used to achieve connection between adjacent cell cells, but high-temperature welding can easily cause warping and breakage of the cell cells and power loss. For this reason, the present application provides a conductive wire film, and the melting points of the base film of the conductive wire film and the conductive coating of the conductive grid wire are both low.
- the base film is in a molten state and adhered and fixed to the back of the cell cell, and the conductive coating is in a molten state and electrically connected to the fine grid wires of the cell electrodes, thereby connecting each cell into a cell string and connecting two adjacent cell cells in series, avoiding damage to the cell cells and power loss caused by high-temperature welding.
- the conductive line film 100 of the first embodiment includes a base film 10 and a plurality of conductive grid lines 20 arranged on the base film, wherein the plurality of conductive grid lines 20 are parallel and spaced apart along the width direction of the base film 10, and each conductive grid line 20 includes a plurality of grid line segments 21 extending and distributed along the length direction of the base film 10, and each two adjacent grid line segments 21 are spaced apart and not conductive to each other, that is, there is a truncation point 22 between the two adjacent grid line segments 21, and the surface of the grid line segment 21 has a conductive coating, the melting temperature range of the conductive coating is 130°C to 150°C, and the melting temperature range of the base film 10 is 90°C to 110°C, wherein the conductive coating is used to electrically connect or insulate the electrode fine grid lines of the battery cell, and the base film 10 is used to adhere and fix to the back side of the battery cell.
- two adjacent conductive grid lines 20 are respectively referred to as odd conductive grid lines and even conductive grid lines, that is, along the length direction of the base film 10, odd conductive grid lines and even conductive grid lines are alternately distributed.
- the gate line segment 21 includes a conductive substrate and a conductive coating covering the conductive substrate, the conductive substrate is a copper substrate, the conductive coating is a low-temperature tin-bismuth-silver alloy, and the thickness of the conductive coating near the electrode fine gate line is greater than the thickness of the conductive coating away from the electrode fine gate line.
- the thickness of the conductive substrate is 0.12 mm to 0.14 mm, the width is 0.6 mm to 0.4 mm, and the thickness of the conductive coating near the electrode fine gate line is greater than the thickness of the conductive coating away from the electrode fine gate line.
- the thickness of the contact part of the electrode fine grid line is 10 ⁇ m to 25 ⁇ m, and the thickness of the non-contact part of the conductive coating away from the electrode fine grid line is 5 ⁇ m to 15 ⁇ m.
- the shape of the grid line segment 21 is not limited to a strip-shaped thin sheet, but can also be circular (0.15 to 0.25mm diameter), semicircular, or trapezoidal.
- the base film 10 is mainly composed of polyolefin resin, has a frosted surface, a melting point of 90°C to 110°C, a gram weight of 85 to 120 g/m2, a width smaller than the battery cell by 5 to 10 mm, and has a very small shrinkage ratio.
- the base film 10 is surface heated by an electromagnetic induction platform and the conductive grid lines 20 are line heated to achieve thermosetting integration of the base film 10 and each conductive grid line 20. Subsequently, each conductive grid line 20 is punched and cut to form multiple grid line segments 21, thereby finally forming a continuous long strip of conductive wire film 100.
- the number of conductive grid lines 20 is an even number of 8 to 18 pairs, and two adjacent conductive grid lines 20 are punched in an alternating arrangement.
- the punching spacing a of the odd conductive grid line S1 is consistent with the punching spacing b of the even conductive grid line S2, and the punching spacing is the length of the two battery cells minus the stacking width of the two adjacent battery cells.
- the punching spacing b is between 2 and 3 mm, and in the direction of the width of the base film 10, the conductive grid lines in the same row are punched alternately, that is, only the odd conductive grid lines or the even conductive grid lines are punched.
- the vertical spacing between the two adjacent odd conductive grid lines S1 and the even conductive grid lines S2 is 3 to 5 mm, and the width D of the conductive wire film is 5 to 10 mm smaller than the width of the battery cell.
- the length L of the conductive wire film 100 can be directly used in combination with the battery cell, which is an integer multiple of the length of the battery cell or longer than the length of the battery string.
- the conductive wire film can also be wound into a roll of less than 100 m.
- the conductive wire film 100 of the first embodiment has low-temperature bonding and conductivity.
- the base film is bonded to the back of the battery cell at 90°C to 110°C, limiting the stacking of the stacked battery cells.
- the conductive coating of the conductive grid line 20 melts at 130°C to 150°C and is connected to the intersection of the fine grid lines of the battery cell electrodes, realizing the conductive ability of current collection and transmission.
- the photovoltaic cell assembly of the second embodiment includes a conductive wire film 100 and a plurality of cell sheets 200 stacked in sequence along the length direction of the base film 10, the base film 10 is adhered to the back of the cell sheet 200, and the back of the cell sheet 200 is provided with positive electrode fine grid lines 30 and negative electrode fine grid lines 40 that are alternately parallel along the length direction of the base film 10, each grid line segment 21 covers two adjacent cell sheets 200, the positive electrode fine grid line 30 of one of the two adjacent cell sheets 200 is electrically connected to the grid line segment 21 and the negative electrode fine grid line 40 is insulated from the grid line segment 21, and the positive electrode fine grid line 30 of the other of the two adjacent cell sheets 200 is insulated from the grid line segment 21 and the negative electrode fine grid line 40 is electrically connected to the grid line segment 21, so as to realize the series connection of the two adjacent cell sheets 200.
- the battery cell 200 is a back contact battery cell, and the battery cell size is not limited to M6 (166mm), G10 (182mm), G12 (210mm, and the battery is not limited to a half-cell battery, but can also be applied to a whole cell, 3 to 5 or more split cells.
- the number of battery cells 200 is an even number, and the specific number is set according to actual needs.
- two adjacent battery cells 200 are respectively referred to as odd battery cells and even battery cells, that is, in the length direction of the bottom film 10, the odd battery cells and the even battery cells are alternately distributed.
- the positive electrode fine grid line 30 of one of the two adjacent battery cells 200 is in direct contact with the conductive coating of the grid line segment 21 to achieve electrical connection (the black solid dot D in FIG. 3 represents electrical contact), and the negative electrode fine grid line 40 of the other of the two adjacent battery cells 200 is in direct contact with the conductive coating of the grid line segment 21 to achieve electrical connection.
- An insulating glue layer is provided between the negative electrode fine grid line 40 of one of the two adjacent battery cells 200 and the conductive coating of the grid line segment 21 to achieve insulation, and an insulating glue layer is provided between the positive electrode fine grid line 30 of the other of the two adjacent battery cells 200 and the conductive coating of the grid line segment 21 to achieve insulation.
- the spacing position of two adjacent grid line segments 21 is located at the stacking of the two adjacent battery cells 200.
- the conductive wire film 100 and the battery cell 200 are combined into a battery string, and the adjacent battery cells 200 are arranged in an overlapping manner, and the overlapping width d1 is adjustable from 0 mm to +1 mm, and d2 is adjustable from -2 mm to +1 mm.
- the odd-numbered battery cells C1 and the even-numbered battery cells C2 are both half-cut cells, and the chamfers of the odd-numbered battery cells C1 and the even-numbered battery cells C2 are arranged outward to present a whole-piece appearance.
- the punching row c of the conductive wire film 100 overlaps with the stacking position of the stacked battery cells, and the punching row c and the conductive grid lines 20 of the conductive wire film 100 intersect vertically.
- the odd-numbered punching holes c1, c3, c5, c7... intersect and overlap with the odd-numbered conductive grid lines S1
- the even-numbered punching holes c2, c4, c6, c8... intersect and overlap with the even-numbered conductive grid lines S2.
- the overlapping parts are disconnected because of the voids.
- the conductive wire film 100 is composed of 16 to 36 conductive wire grids 20 in an even number of pairs, with gaps arranged between two adjacent conductive wire grids 20, and the conductive wire grids 20 are punched out by a pressure needle to remove a portion of 1 to 3 mm in length, and the gaps are between two adjacent battery cells in the stack to match the electrode pattern of the back contact battery and achieve insulation isolation between the stacked battery cells.
- the back contact battery cell grid lines of the positive sheet there are 260 to 360 grid lines, and the conductive wire grids 20 of the conductive wire film and the electrode fine grid lines of the battery cell form 4160 to 12960 mesh-like interlaced current collection points, and the positive and negative electrodes of the adjacent battery cells 200 are connected through the conductive wire film 100.
- the distance between two adjacent odd-numbered conductive gate lines 20 is equal to the distance between two adjacent even-numbered conductive gate lines 20 , and the distance between two adjacent odd-numbered and even-numbered conductive gate lines 20 is equal.
- the conductive film 100 and the cell 200 are only combined on the back of the cell, and there is no treatment on the front of the cell.
- the composite temperature of the conductive film 100 and the cell 200 is between 90°C and 110°C.
- the bottom film 10 is sequentially pressed on the metal platform and heated by electromagnetic induction.
- the base film 10 is heated by applying electric current to the conductive grid line 20, and the conductive line film 100 is combined into one by a pressing mechanism, and then the regular arrangement of the punching row c is realized by an electronic mirror device and a punching device.
- the low-temperature attachment of conductive wire film replaces the traditional high-low temperature welding, conductive backplane, and conductive adhesive process to achieve battery string connection.
- the battery string electrical connection can be completed at a low temperature of 90 to 110°C, which is suitable for the industry's cost reduction needs and technology development trends of "removing the main grid, low temperature, and thin film".
- the conductive film is suitable for full back contact photovoltaic cells.
- the conductive film is only used on the back side of the cell, and no processing is done on the front side of the cell. It is different from the industry's mainstream double-sided welding and double-sided film-coated cell string connection technology. The production of cell strings can save half of the coating cost.
- connection method of the battery string realized by the conductive wire film replaces the welding process, avoids the use of materials such as flux and conductive glue, and better guarantees the stability of the packaging material.
- the connection method of the battery string realized by the conductive wire film avoids high-temperature welding stress and better guarantees the reliability for long-term use.
- the current collection of the photovoltaic cell module is composed of 4160 to 12960 mesh-like staggered current collection points, which greatly improves the current collection and transmission capabilities.
- the small resistance of the contact point reduces the resistance power loss of the battery itself, thereby improving the current transmission capacity of the battery string, that is, reducing the power loss of the module, and reducing the module packaging loss.
- the photovoltaic cell module implements a packaging solution that adds a layer of conductive wire film on the back of the cell. Because the conductive grid wire adopts a copper-based sheet with a thinned substrate and the bottom film is a polyolefin film, the load-bearing capacity of the cell string is improved through the lamination packaging of the front and back sealing films of the module. The gram weight of the back packaging film can also be reduced, further reducing the non-silicon cost of the module.
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Abstract
一种导电线膜(100)和光伏电池组件。该导电线膜(100)包括底膜(10)和设置于底膜(10)上的若干条导电栅线(20),若干条导电栅线(20)沿着底膜(10)的宽度所在方向平行且间隔分布,每条导电栅线(20)包括沿着底膜(10)的长度所在方向延伸分布的多节栅线段(21),每相邻的两节栅线段(21)均间隔且互不导通,栅线段(21)的表面具有导电涂层,导电涂层的熔融温度范围为130℃~150℃,底膜(10)的熔融温度范围为90℃~110℃。导电线膜(100)具有低温粘结能力与导电能力,底膜(10)在较低温度下与电池片背面粘结附着,对叠片电池片起到叠片限位的作用,导电栅线(20)的导电涂层在较低温度下熔融,与电池片的电极细栅线相交点联通,实现电流收集与传输,避免采用高温焊接对电池片造成损伤和功率损失。
Description
本发明属于光伏组件技术领域,具体地讲,涉及一种导电线膜和光伏电池组件。
目前,实现晶体硅光伏电池片的连接技术主要包括焊带高温焊接、导电胶连接和导电背板连接等类型。其中,采用焊带高温焊接的技术应用最为普遍,多以双面、半片、多主栅电池的叠加应用为基础,又或在此基础之上再叠加某些特殊技术,诸如焊带整形叠焊、异形分段焊带、拼片焊接等。焊带高温焊接的基本原理:是采用高温焊接工艺(一般230摄氏度以上)使铜基焊带与光伏电池表面的主栅线形成良好的欧姆接触,从而实现数片电池的串联电路,到达电流收集与传输目的。该类技术主要面临问题是:1)高温焊接存在应力造成电池片的翘曲形变及破片损耗;2)高温焊接形成接触电阻造成电池片功率损失较大。
发明内容
本发明解决的技术问题是:如何在低温条件下实现光伏电池片之间的连接,以避免高温焊接造成的电池片翘曲破损和功率损失。
本发明公开了一种导电线膜,所述导电线膜包括底膜和设置于所述底膜上的若干条导电栅线,若干条所述导电栅线沿着所述底膜的宽度所在方向平行且间隔分布,每条所述导电栅线包括沿着所述底膜的长度所在方向延伸分布的多节栅线段,每相邻的两节所述栅线段均间隔且互不导通,所述栅线段的表面具有导电涂层,所述导电涂层的熔融温度范围为130℃~150℃,所述底膜的熔融温度范围为90℃~110℃,其中,所述导电涂层用于电连接或绝缘连接电池片的电极细栅线,所述底膜用于粘附固定于与所述电池片的背面。
优选地,所述栅线段包括导电基材和包覆所述导电基材的导电涂层。
优选地,所述导电涂层的靠近所述电极细栅线的接触部分的厚度大于所述
导电涂层的远离所述电极细栅线的非接触部分的厚度。
优选地,所述导电基材为铜基材,所述导电涂层为低温锡铋银系合金。
优选地,所述导电栅线的数量为偶数。
本申请还公开了一种光伏电池组件,所述光伏电池组件包括导电线膜和沿着所述底膜的长度所在方向依次叠片的若干电池片,所述底膜粘附于所述电池片的背面,所述电池片的背面设置有沿着所述底膜的长度所在方向交替平行的正极细栅线和负极细栅线;每节所述栅线段覆盖相邻的两块所述电池片,相邻的两块所述电池片其中之一的所述正极细栅线与所述栅线段电连接且所述负极细栅线与所述栅线段绝缘,相邻的两块所述电池片其中另一的所述正极细栅线与所述栅线段绝缘且所述负极细栅线与所述栅线段电连接,以实现相邻两块所述电池片串联。
优选地,在所述底膜的长度所在方向上,相邻两节所述栅线段的间隔位置位于相邻两块所述电池片的叠片处。
优选地,相邻的两块所述电池片其中之一的所述正极细栅线与所述栅线段的导电涂层直接接触以实现电连接,相邻的两块所述电池片其中另一的所述负极细栅线与所述栅线段的导电涂层直接接触以实现电连接。
优选地,相邻的两块所述电池片其中之一的所述负极细栅线与所述栅线段的导电涂层之间设置绝缘胶层以实现绝缘,相邻的两块所述电池片其中另一的所述正极细栅线与所述栅线段的导电涂层之间设置绝缘胶层以实现绝缘。
本发明公开的一种导电线膜和光伏电池组件,相对于现有技术,具有如下技术效果:
导电线膜具有低温粘结能力与导电能力,底膜在较低温度下与电池片背面粘结附着,对叠片电池片起到叠片限位,导电栅线在较低时导电涂层熔融,与电池片的电极细栅线相交点联通,实现电流收集与传输的导电能力,避免采用高温焊接对电池片造成损伤和功率损失。
图1为本发明的实施例一的导电线膜的示意图;
图2为本发明的实施例二的光伏电池组件的示意图;
图3为本发明的实施例二的光伏电池组件的电路连接原理示意图;
图4为本发明的实施例二的光伏电池组件的另一示意图。
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
在详细描述本申请的各个实施例之前,首先简单描述本申请的技术构思:现有技术中的背接触电池片组串工艺过程中,通常采用焊带高温焊接技术来实现相邻电池片之间的连接,但是高温焊接容易造成电池片翘曲破损和功率损失,为此,本申请提供了一种导电线膜,导电线膜的底膜和导电栅线的导电涂层的熔点均较低,因此在较低温度下,底膜处于熔融状态而与电池片背面粘附固定,导电涂层处于熔融状态而与电池片的电极细栅线实现电连接,从而实现各块电池片连成电池串,且相邻的两块电池片实现串联,避免采用高温焊接对电池片造成损伤和功率损失。
具体地,如图1所示,本实施例一的导电线膜100包括底膜10和设置于底膜上的若干条导电栅线20,若干条导电栅线20沿着底膜10的宽度所在方向平行且间隔分布,每条导电栅线20包括沿着底膜10的长度所在方向延伸分布的多节栅线段21,每相邻的两节栅线段21均间隔且互不导通,即相邻的两节栅线段21之间具有截断点22,栅线段21的表面具有导电涂层,导电涂层的熔融温度范围为130℃~150℃,底膜10的熔融温度范围为90℃~110℃,其中,导电涂层用于电连接或绝缘连接电池片的电极细栅线,底膜10用于粘附固定于与电池片的背面。
示例性地,导电栅线20的数量为偶数,具体数量根据实际需求来设定。为了便于描述,将相邻的两条导电栅线20分别称为奇数导电栅线和偶数导电栅线,即在底膜10的长度所在方向上,奇数导电栅线和偶数导电栅线交替分布。
进一步地,栅线段21包括导电基材和包覆导电基材的导电涂层,导电基材为铜基材,导电涂层为低温锡铋银系合金,导电涂层的靠近电极细栅线的接触部分的厚度大于导电涂层的远离电极细栅线的非接触部分的厚度。示例性地,导电基材的厚度为0.12mm~0.14mm、宽度为0.6mm~0.4mm,导电涂层的靠近
电极细栅线的接触部分的厚度为10μm~25μm,导电涂层的远离电极细栅线的非接触部分的厚度为5μm~15μm。栅线段21的形状不限于条形薄片状,也可以是圆形(0.15~0.25mm直径)、半圆形、梯形。
示例性地,底膜10采用聚烯烃树脂为主成分,表面具有磨砂纹路,熔融点为90℃~110℃,克重85~120g/㎡,宽度小于电池片5~10mm,具有极小收缩比例。
示例性地,通过电磁感应平台对底膜10进行面加热、通过对导电栅线20进行线加热,达到底膜10和各条导电栅线20热固一体化,接着对各条导电栅线20进行冲孔截断,将每条导电栅线20打断形成多节栅线段21,最终形成连续的长条状的导电线膜100。
示例性地,导电栅线20的数量为8~18的偶数对,相邻两根导电栅线20做交错排布的冲孔。相邻的两条导电栅线20中,奇数导电栅线S1的冲孔间距a与偶数导电栅线S2的冲孔间距b一致,冲孔间距为两块电池片的长度和减去相邻两块电池片的叠片宽度。冲孔间距b在2~3mm之间,在底膜10的宽度所在方向上,同一排的导电栅线交替冲孔,即只冲孔奇数导电栅线或偶数导电栅线。相邻两根奇数导电栅线S1与偶数导电栅线S2垂直间距在3~5mm,导电线膜宽度D比电池片宽度小5~10mm,导电线膜100长度L,可以直接与电池片复合使用,是电池片长度整倍数或长于电池串长度,也可以对导电线膜单独缠绕成卷100m以内。
本实施例一的导电线膜100具有低温粘结能力与导电能力,底膜在90℃~110℃与电池片背面粘结附着,对叠片电池片起到叠片限位,导电栅线20在130℃~150℃时导电涂层熔融,与电池片的电极细栅线相交点联通,实现电流收集与传输的导电能力。
如图2和图3所示,本实施例二的光伏电池组件包括导电线膜100和沿着底膜10的长度所在方向依次叠片的若干电池片200,底膜10粘附于电池片200的背面,电池片200的背面设置有沿着底膜10的长度所在方向交替平行的正极细栅线30和负极细栅线40,每节栅线段21覆盖相邻的两块电池片200,相邻的两块电池片200其中之一的正极细栅线30与栅线段21电连接且负极细栅线40与栅线段21绝缘,相邻的两块电池片200其中另一的正极细栅线30与栅线段21绝缘且负极细栅线40与栅线段21电连接,以实现相邻两块电池片200串联。
示例性地,电池片200为背接触电池片,电池片尺寸不限于M6(166mm)、G10(182mm)、G12(210mm,电池不限于半片电池,也可适用于整片、3~5多分片电池。电池片200的数量为偶数,具体数量根据实际需求来设定。为了便于描述,将相邻的两块电池片200分别称为奇数电池片和偶数电池片,即在底膜10的长度所在方向上,奇数电池片和偶数电池片交替分布。
进一步地,相邻的两块电池片200其中之一的正极细栅线30与栅线段21的导电涂层直接接触以实现电连接(图3中的黑色实心点D表示电接触),相邻的两块电池片200其中另一的负极细栅线40与栅线段21的导电涂层直接接触以实现电连接。相邻的两块电池片200其中之一的负极细栅线40与栅线段21的导电涂层之间设置绝缘胶层以实现绝缘,相邻的两块电池片200其中另一的正极细栅线30与栅线段21的导电涂层之间设置绝缘胶层以实现绝缘。进一步地,在底膜10的长度所在方向上,相邻两节栅线段21的间隔位置位于相邻两块电池片200的叠片处。
具体来说,如图4所示,导电线膜100与电池片200复合成电池串,相邻的电池片200之间相叠排布,相叠宽度d1从0mm~+1mm可调、d2从-2mm~+1mm可调。奇数电池片C1、偶数电池片C2均为半切片电池,奇数电池片C1和偶数电池片C2的倒角分别对外排布呈整片外观。导电线膜100的冲孔排c和相叠电池片的叠片位置重叠,冲孔排c和导电线膜100的导电栅线20垂直相交,奇数冲孔c1、c3、c5、c7……与奇数导电栅线S1相交重合,偶数冲孔c2、c4、c6、c8……与偶数导电栅线S2相交重合,重合的部分通过因为空洞实现断路。
示例性地,导电线膜100由16~36根导电线栅20以偶数对的形式组合,相邻两根导电线栅20间隔排布孔隙,通过压针冲孔去除导电线栅20的长度1~3mm的部分,孔隙在相邻叠片的两电池片之间,以匹配背接触电池的电极图形并实现相叠电池片间的绝缘阻隔。对于正片的背接触电池片栅线在260~360根,导电线膜的导电线栅20与电池片的电极细栅线形成4160~12960个网状交错的电流收集点,相邻的电池片200的正、负极通过导电线膜100实现通路。
进一步地,相邻两根奇数导电栅线20的间距与相邻两根偶数导电栅线20的间距相等,相邻两根奇数与偶数导电栅线20的间距相等。
在制备光伏电池组件时,导电线膜100与电池片200的复合仅在电池片的背面,电池片正面没有任何处理措施。导电线膜100与电池片200的复合温度在90℃~110℃。将底膜10顺序压放于金属平台上,通过电磁感应加热金属平台上
的底膜10、通过加电流方式加热导电栅线20,通过压合机构实现导电线膜100复合为一体,再通过电子镜像装置与冲压装置实现冲孔排c的规律排布。
本实施例二公开的光伏电池组件具有如下优点:
1、利用导电线膜的低温贴附替代了传统高低温焊接、导电背板、导电胶工艺实现的电池串连接工艺,可在低温90~110℃完成电池串电连接,适用于行业对“去主栅、低温化、薄片化“的降本需求及技术发展趋势。
2、该导电线膜适用于全背接触光伏电池,导电线膜仅用于电池片背面一侧,电池片正面不做任何工艺处理,有别于行业主流的双面焊接、双面覆膜电池串连接技术,电池串的制作可节约一半的覆膜成本。
3、该导电线膜实现电池串的连接方式替代了焊接工艺,避免了助焊剂、导电胶等材料的使用,对于封装材料稳定性更有保障。该导电线膜实现的电池串的连接方式,避免了高温焊接应力,对于长期使用可靠性更有保障。
4、该光伏电池组件的电流收集是通过4160~12960个网状交错的电流收集点组成,电流收集及传输能力有较大改善,加之接触点的电阻较小降低了电池本身的电阻功率损耗,因此提升了电池串的电流传输能力,即降低了组件功率损耗,可降低组件封装损耗。
5、该光伏电池组件实现电池片背面增加一层导电线膜的封装方案,因导电栅线采用基材减薄的铜基片材、底膜选用聚烯烃类胶膜,再通过组件前、背封胶膜的层压封装使电池串的承载能力有所提升,背面封装胶膜的克重还可以降低,进一步降低了组件非硅成本。
上面对本发明的具体实施方式进行了详细描述,虽然已表示和描述了一些实施例,但本领域技术人员应该理解,在不脱离由权利要求及其等同物限定其范围的本发明的原理和精神的情况下,可以对这些实施例进行修改和完善,这些修改和完善也应在本发明的保护范围内。
Claims (9)
- 一种导电线膜,其特征在于,所述导电线膜包括底膜和设置于所述底膜上的若干条导电栅线,若干条所述导电栅线沿着所述底膜的宽度所在方向平行且间隔分布,每条所述导电栅线包括沿着所述底膜的长度所在方向延伸分布的多节栅线段,每相邻的两节所述栅线段均间隔且互不导通,所述栅线段的表面具有导电涂层,所述导电涂层的熔融温度范围为130℃~150℃,所述底膜的熔融温度范围为90℃~110℃,其中,所述导电涂层用于电连接或绝缘连接电池片的电极细栅线,所述底膜用于粘附固定于与所述电池片的背面。
- 根据权利要求1所述的导电线膜,其特征在于,所述栅线段包括导电基材和包覆所述导电基材的导电涂层。
- 根据权利要求2所述的导电线膜,其特征在于,所述导电涂层的靠近所述电极细栅线的接触部分的厚度大于所述导电涂层的远离所述电极细栅线的非接触部分的厚度。
- 根据权利要求2所述的导电线膜,其特征在于,所述导电基材为铜基材,所述导电涂层为低温锡铋银系合金。
- 根据权利要求1所述的导电线膜,其特征在于,所述导电栅线的数量为偶数。
- 一种光伏电池组件,其特征在于,所述光伏电池组件包括如权利要求1至5任一项所述的导电线膜和沿着所述底膜的长度所在方向依次叠片的若干电池片,所述底膜粘附于所述电池片的背面,所述电池片的背面设置有沿着所述底膜的长度所在方向交替平行的正极细栅线和负极细栅线;每节所述栅线段覆盖相邻的两块所述电池片,相邻的两块所述电池片其中之一的所述正极细栅线与所述栅线段电连接且所述负极细栅线与所述栅线段绝缘,相邻的两块所述电池片其中另一的所述正极细栅线与所述栅线段绝缘且所述负极细栅线与所述栅线段电连接,以实现相邻两块所述电池片串联。
- 根据权利要求6所述的光伏电池组件,其特征在于,在所述底膜的长度所在方向上,相邻两节所述栅线段的间隔位置位于相邻两块所述电池片的叠片处。
- 根据权利要求6所述的光伏电池组件,其特征在于,相邻的两块所述电池片其中之一的所述正极细栅线与所述栅线段的导电涂层直接接触以实现电连接,相邻的两块所述电池片其中另一的所述负极细栅线与所述栅线段的导电涂 层直接接触以实现电连接。
- 根据权利要求6所述的光伏电池组件,其特征在于,相邻的两块所述电池片其中之一的所述负极细栅线与所述栅线段的导电涂层之间设置绝缘胶层以实现绝缘,相邻的两块所述电池片其中另一的所述正极细栅线与所述栅线段的导电涂层之间设置绝缘胶层以实现绝缘。
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CN113193058A (zh) * | 2021-05-28 | 2021-07-30 | 浙江爱旭太阳能科技有限公司 | 一种背接触太阳能电池串及制备方法、组件及系统 |
CN216250759U (zh) * | 2021-11-22 | 2022-04-08 | 陕西众森电能科技有限公司 | 一种无主栅背接触电池组件 |
US20220140168A1 (en) * | 2019-03-05 | 2022-05-05 | Longi Solar Technology (Taizhou) Co., Ltd. | Back-contact solar cell conductive composite board and preparation method therefor, back-contact solar cell interconnection structure, and double-sided back-contact solar cell module |
CN115172486A (zh) * | 2022-07-12 | 2022-10-11 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Ibc太阳能电池组件及其制作方法、ibc太阳能电池组串 |
CN115548141A (zh) * | 2022-10-26 | 2022-12-30 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | 导电线膜和光伏电池组件 |
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US20220140168A1 (en) * | 2019-03-05 | 2022-05-05 | Longi Solar Technology (Taizhou) Co., Ltd. | Back-contact solar cell conductive composite board and preparation method therefor, back-contact solar cell interconnection structure, and double-sided back-contact solar cell module |
CN113193058A (zh) * | 2021-05-28 | 2021-07-30 | 浙江爱旭太阳能科技有限公司 | 一种背接触太阳能电池串及制备方法、组件及系统 |
CN216250759U (zh) * | 2021-11-22 | 2022-04-08 | 陕西众森电能科技有限公司 | 一种无主栅背接触电池组件 |
CN115172486A (zh) * | 2022-07-12 | 2022-10-11 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Ibc太阳能电池组件及其制作方法、ibc太阳能电池组串 |
CN115548141A (zh) * | 2022-10-26 | 2022-12-30 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | 导电线膜和光伏电池组件 |
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