WO2024075595A1 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

Info

Publication number
WO2024075595A1
WO2024075595A1 PCT/JP2023/034934 JP2023034934W WO2024075595A1 WO 2024075595 A1 WO2024075595 A1 WO 2024075595A1 JP 2023034934 W JP2023034934 W JP 2023034934W WO 2024075595 A1 WO2024075595 A1 WO 2024075595A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
prism
prisms
laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/034934
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
健太 渡邉
一彦 山中
雅幸 畑
茂生 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Priority to JP2024555742A priority Critical patent/JPWO2024075595A1/ja
Publication of WO2024075595A1 publication Critical patent/WO2024075595A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Definitions

  • This disclosure relates to a semiconductor laser device.
  • Patent Document 1 describes a semiconductor laser device including a multistage base, a plurality of semiconductor laser elements, a plurality of FAST-axis collimator lenses, a plurality of SLOW-axis collimator lenses, and a plurality of reflecting mirrors, a focusing lens, and an optical fiber, which are all placed on the multistage base.
  • Each of the plurality of semiconductor laser elements, each of the plurality of FAST-axis collimator lenses, each of the plurality of SLOW-axis collimator lenses, and each of the plurality of reflecting mirrors are placed on each stage of the multistage base.
  • the laser light emitted from each of the plurality of semiconductor laser elements is collimated by the FAST-axis collimator lens and the SLOW-axis collimator lens, deflected by the reflecting mirror, and enters the focusing lens.
  • the focusing lens focuses the plurality of incident laser lights on the incident end face of the optical fiber. This allows the plurality of laser lights to be spatially multiplexed.
  • the semiconductor laser device described in Patent Document 1 aims to realize a compact, high-output laser light source through the above-mentioned configuration.
  • the optical axis of the laser light emitted from the FAST axis collimator lens is angularly shifted with respect to the optical axis of the subsequent optical system.
  • the angle of the optical axis of the multiple laser lights becomes a bundle of laser lights that is shifted with respect to the optical axis of the subsequent optical system, and the light utilization efficiency of the subsequent optical system may decrease.
  • the present disclosure therefore aims to facilitate adjustment of the optical axis angle in a semiconductor laser device equipped with multiple semiconductor laser elements.
  • a semiconductor laser device includes a housing having a flat bottom surface, a plurality of semiconductor laser elements disposed within the housing, a plurality of FAST-axis collimator lenses that collimate the plurality of laser beams emitted from the plurality of semiconductor laser elements in the FAST-axis direction, a plurality of prisms that deflect the plurality of laser beams in the FAST-axis direction, and a plurality of SLOW-axis collimator lenses that collimate the plurality of laser beams in the SLOW-axis direction, each of the plurality of prisms being disposed between each of the plurality of FAST-axis collimator lenses and each of the plurality of SLOW-axis collimator lenses, and the plurality of laser beams emitted from the plurality of SLOW-axis collimator lenses have different optical axis positions in the FAST-axis direction.
  • FIG. 1 is a perspective view showing a configuration of a semiconductor laser device according to a first embodiment
  • 1 is a perspective view showing an optical path of laser light in a semiconductor laser device according to a first embodiment
  • 2 is a side view showing an optical path of laser light in the semiconductor laser device according to the first embodiment
  • 2 is a side view showing an optical path of laser light in the first embodiment
  • FIG. 11 is a graph showing the relationship between the installation angle of a prism and the deflection angle of a laser beam deflected by the prism.
  • 1 is a side view showing an optical path of laser light in a semiconductor laser device according to a first modification of the first embodiment.
  • FIG. 11 is a side view showing an optical path of laser light in a semiconductor laser device according to a second modification of the first embodiment.
  • FIG. 13 is a side view showing an optical path of laser light in a semiconductor laser device according to a third modification of the first embodiment.
  • FIG. 13 is a side view showing a configuration of a prism installation surface in a semiconductor laser device according to a fourth modification of the first embodiment.
  • FIG. FIG. 11 is a perspective view showing a configuration of a semiconductor laser device according to a second embodiment.
  • FIG. 11 is a plan view showing a configuration of a semiconductor laser device according to a second embodiment.
  • 13 is a diagram showing a state of a prism before a bonding material hardens when the prism is fixed to an element mounting surface using the bonding material.
  • FIG. 13 is a diagram showing the state of a prism after a bonding material has hardened when the prism is fixed to an element mounting surface using the bonding material.
  • FIG. FIG. 11 is a perspective view showing a configuration of a semiconductor laser device according to a modified example of the second embodiment.
  • FIG. 11 is a plan view showing a configuration of a semiconductor laser device according to a modification of the second embodiment.
  • FIG. 11 is a perspective view showing a configuration of a semiconductor laser device according to a third embodiment.
  • 11 is a side view showing a configuration of a semiconductor laser element according to a third embodiment.
  • FIG. FIG. 11 is a perspective view showing a configuration of a semiconductor laser device according to a fourth embodiment.
  • FIG. 13 is a side view showing a configuration of a semiconductor laser device according to a fourth embodiment.
  • FIG. 13 is a perspective view showing a configuration of a semiconductor laser device according to a fifth embodiment.
  • FIG. 13 is a plan view showing a configuration of a semiconductor laser device according to a fifth embodiment.
  • FIG. 13 is a side view showing a configuration of a semiconductor laser device according to a fifth embodiment.
  • FIG. 13 is a perspective view showing a configuration of a semiconductor laser device according to a sixth embodiment.
  • each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, for example, the scales of each figure do not necessarily match.
  • the same reference numerals are used for substantially the same configuration, and duplicate explanations are omitted or simplified.
  • the terms “above” and “below” do not refer to vertically above and below in an absolute spatial sense, but are used as terms defined by a relative positional relationship based on the stacking order in the stacked configuration. Furthermore, the terms “above” and “below” are applied not only to cases where two components are arranged with a gap between them and another component exists between the two components, but also to cases where two components are arranged in close contact with each other and the two components are in contact.
  • FIG. 1 is a perspective view showing the configuration of the semiconductor laser device 1 according to the present embodiment.
  • the cover of the housing 2 of the semiconductor laser device 1 and a part of the side wall 3 are not shown in order to show the inside of the semiconductor laser device 1.
  • FIGS. 2 and 3 are a perspective view and a side view showing the optical paths of the laser beams L0A to L0E and L1A to L1E in the semiconductor laser device 1 according to the present embodiment, respectively.
  • FIGS. 1 is a perspective view showing the configuration of the semiconductor laser device 1 according to the present embodiment.
  • each figure shows an X-axis, a Y-axis, and a Z-axis which are orthogonal to each other.
  • the X-axis, the Y-axis, and the Z-axis are in a right-handed Cartesian coordinate system.
  • the relative position in the X-axis direction may be expressed as "upper” (or “upper”) or "lower” (or “lower”).
  • a position on the positive side of the X-axis direction may be expressed as an upper position
  • a position on the negative side of the X-axis direction may be expressed as a lower position.
  • the semiconductor laser device 1 includes a housing 2, a plurality of semiconductor laser elements 10-15, fast-axis collimator lenses 30-35, prisms 40-45, slow-axis collimator lenses 60-65, and a plurality of reflecting mirrors 70-75.
  • the semiconductor laser device 1 further includes submounts 20-25, a plurality of laser mounting surfaces 80a-85a, a plurality of element mounting surfaces 80-85, a focusing lens 90, an optical fiber 4, and current introduction terminals 9a, 9b.
  • the semiconductor laser device 1 is a module that can spatially combine and emit the laser light emitted from each of the multiple semiconductor laser elements 10 to 15 using an optical system.
  • the housing 2 is a container having a flat bottom surface 6a.
  • the bottom surface 6a is a flat area of the main surface of the bottom 6 located inside the housing 2.
  • the bottom surface 6a is a surface in the same plane.
  • the bottom surface 6a is the entire main surface of the bottom 6.
  • the housing 2 has a bottom 6, a side wall 3, and a lid (not shown).
  • the housing 2 may be an airtight package that hermetically seals an internal space in which multiple semiconductor laser elements 10-15 and the like are arranged. In other words, the housing 2 may hermetically seal multiple semiconductor laser elements 10-15, multiple FAST axis collimator lenses 30-35, multiple prisms 40-45, and multiple SLOW axis collimator lenses 60-65.
  • the bottom 6 is a plate-like member that is placed at the bottom (the lower end, i.e., the end on the negative side in the X-axis direction in each figure) of the housing 2.
  • the bottom 6 has a flat bottom surface 6a.
  • the bottom surface 6a is the main surface of the bottom 6 that is located on the inside of the housing 2.
  • the sidewall 3 is disposed perpendicular to the bottom 6 of the housing 2.
  • the sidewall 3 is disposed so as to surround the multiple semiconductor laser elements 10-15.
  • the sidewall 3 is made of, for example, Cu, a Cu alloy, an Fe-Ni-Co alloy, or Al.
  • the bottom 6 is made of, for example, Cu, a Cu alloy, Al, or a ceramic with high thermal conductivity (for example, AlN or BeO).
  • the lid is a member that covers the upper part of the housing 2.
  • the current introduction terminals 9a, 9b are terminals for introducing a current from the outside of the housing 2 to the inside of the housing 2. One end of each of the current introduction terminals 9a, 9b is disposed outside the housing 2, and the other end is disposed inside the housing 2. In this embodiment, the current introduction terminals 9a, 9b are disposed on the side wall 3 and penetrate the side wall 3. If the side wall 3 is formed of a conductive material, an insulating member is disposed between the current introduction terminals 9a, 9b and the side wall 3.
  • the multiple element mounting surfaces 80 to 85 are surfaces on which multiple reflecting mirrors 70 to 75 are respectively mounted. That is, the reflecting mirror 70 is mounted on the element mounting surface 80, the reflecting mirror 71 is mounted on the element mounting surface 81, the reflecting mirror 72 is mounted on the element mounting surface 82, the reflecting mirror 73 is mounted on the element mounting surface 83, the reflecting mirror 74 is mounted on the element mounting surface 84, and the reflecting mirror 75 is mounted on the element mounting surface 85.
  • the multiple element mounting surfaces 80 to 85 have different heights from the bottom surface 6a.
  • the element mounting surface 81 is higher from the bottom surface 6a than the element mounting surface 80
  • the element mounting surface 82 is higher from the bottom surface 6a than the element mounting surface 81
  • the element mounting surface 83 is higher from the bottom surface 6a than the element mounting surface 82
  • the element mounting surface 84 is higher from the bottom surface 6a than the element mounting surface 83
  • the element mounting surface 85 is higher from the bottom surface 6a than the element mounting surface 84.
  • the element mounting surfaces 80 to 85 are flat surfaces parallel to the bottom surface 6a. The difference in height between two adjacent element mounting surfaces and the bottom surface 6a is 0.50 mm.
  • the laser mounting surfaces 80a to 85a are surfaces on which multiple semiconductor laser elements 10 to 15 are respectively mounted. That is, the semiconductor laser element 10 is mounted on the laser mounting surface 80a, the semiconductor laser element 11 is mounted on the laser mounting surface 81a, the semiconductor laser element 12 is mounted on the laser mounting surface 82a, the semiconductor laser element 13 is mounted on the laser mounting surface 83a, the semiconductor laser element 14 is mounted on the laser mounting surface 84a, and the semiconductor laser element 15 is mounted on the laser mounting surface 85a.
  • the multiple laser mounting surfaces 80a to 85a have different heights from the bottom surface 6a.
  • the laser mounting surface 81a is higher from the bottom surface 6a than the laser mounting surface 80a
  • the laser mounting surface 82a is higher from the bottom surface 6a than the laser mounting surface 81a
  • the laser mounting surface 83a is higher from the bottom surface 6a than the laser mounting surface 82a
  • the laser mounting surface 84a is higher from the bottom surface 6a than the laser mounting surface 83a
  • the laser mounting surface 85a is higher from the bottom surface 6a than the laser mounting surface 84a.
  • the laser mounting surfaces 80a to 85a are higher from the bottom surface 6a than the element mounting surfaces 80 to 85, respectively.
  • the laser mounting surfaces 80a to 85a are flat surfaces parallel to the bottom surface 6a.
  • the difference in height from the bottom surface 6a between two adjacent laser mounting surfaces is 0.50 mm.
  • the semiconductor laser device 1 includes a multi-stage base 8 having a plurality of element mounting surfaces 80-85 and a plurality of laser mounting surfaces 80a-85a.
  • the multi-stage base 8 has a plurality of stair-like steps. A surface parallel to the bottom surface 6a of each of the plurality of steps of the multi-stage base 8 corresponds to each of the plurality of element mounting surfaces 80-85 or each of the plurality of laser mounting surfaces 80a-85a.
  • the multi-stage base 8 has a lower surface 8ba, and is placed on the bottom surface 6a so that the lower surface 8ba is parallel to the bottom surface 6a.
  • the multi-stage base 8 has a number of steps in a staircase shape.
  • Each of the multiple steps of the multi-stage base 8 has a surface parallel to the lower surface 8ba, and the surfaces parallel to the lower surface 8ba correspond to each of the multiple element mounting surfaces 80-85. Therefore, each of the multiple element mounting surfaces 80-85 is parallel to the bottom surface 6a. Also, each of the multiple element mounting surfaces 80-85 is parallel to one another and is not on the same plane.
  • the multiple element mounting surfaces 80-85 and the multiple laser mounting surfaces 80a-85a are formed on one multi-stage base 8, but the configuration of each mounting surface is not limited to this.
  • the semiconductor laser device 1 may include a first multi-stage base having multiple laser mounting surfaces 80a-85a and a second multi-stage base having multiple element mounting surfaces 80-85.
  • the multiple semiconductor laser elements 10-15 are elements that convert input power and emit laser light, and are arranged inside the housing 2.
  • the multiple semiconductor laser elements 10-15 are arranged in the Y-axis direction.
  • the multiple semiconductor laser elements 10-15 are mounted on the multiple laser mounting surfaces 80a-85a, respectively.
  • the multiple semiconductor laser elements 10-15 are mounted on the multiple laser mounting surfaces 80a-85a via the multiple submounts 20-25, respectively.
  • the multiple semiconductor laser elements 10-15 may be fixed, for example, with an inorganic adhesive.
  • Each of the multiple semiconductor laser elements 10-15 is a laser element in which a semiconductor laminate film and an optical waveguide are formed on a semiconductor substrate.
  • Each of the semiconductor laser elements 10-15 converts power input from the outside to the optical waveguide into stimulated emission light such as laser light, and emits it from a light-emitting point (see light-emitting points 10e, 11e shown in Figure 3) which is one end of the optical waveguide.
  • Each of the semiconductor laser elements 10-15 emits multiple laser beams L0A-L5A. In this embodiment, the multiple laser beams L0A-L5A are emitted parallel to the Z-axis direction from each of the multiple semiconductor laser elements 10-15.
  • the FAST axis of the multiple laser beams L0A to L5A is the axis in the stacking direction of the semiconductor laminated film of the multiple semiconductor laser elements 10 to 15, and the SLOW axis perpendicular to the FAST axis is an axis parallel to the stacking surface of the semiconductor laminated film.
  • the FAST axis direction of each of the multiple laser beams L0A to L5A immediately after being emitted from the multiple semiconductor laser elements 10 to 15 is the height direction from the bottom surface 6a (the X-axis direction in each figure).
  • the wavelength of each laser light varies depending on the semiconductor material constituting the semiconductor laminated film of each semiconductor laser element.
  • the semiconductor laser elements 10-15 nitride-based semiconductor laser elements mainly composed of nitrides of Al, Ga, and In
  • the semiconductor laser elements 10-15 can emit laser light having a peak wavelength between 350 nm and 550 nm.
  • the semiconductor laser elements 10-15 mainly composed of semiconductors composed of Al, Ga, In, As, and P
  • the semiconductor laser elements 10-15 can emit laser light having a peak wavelength between 600 nm and 1600 nm.
  • the semiconductor laser elements 10-15 are not limited to semiconductor laser elements made of the above semiconductor materials, and the wavelength of the laser light emitted by the semiconductor laser elements 10-15 is not limited to the above wavelength.
  • the peak wavelength of the laser light emitted by the semiconductor laser elements 10-15 is 455 nm.
  • the multiple semiconductor laser elements 10 to 15 are rectangular in shape and are long in the waveguiding direction of the optical waveguide.
  • the length of each semiconductor laser element (dimension in the Z-axis direction in FIG. 1) is 1.00 mm
  • the width of each semiconductor laser element (dimension in the Y-axis direction in FIG. 1) is 0.20 mm.
  • the optical waveguide has a width of, for example, 5 ⁇ m or more and 300 ⁇ m or less, and a length of, for example, 0.50 mm or more and 5.00 mm or less.
  • the length of the optical waveguide of each semiconductor laser element i.e., the length of each semiconductor laser element
  • the multiple semiconductor laser elements 10 to 15 are transverse multimode lasers in which the laser light is multimode in the SLOW axis.
  • the multiple semiconductor laser elements 10 to 15 are laser elements with Fabry-Perot mirrors formed on both ends of the optical waveguide, but the configuration of the multiple semiconductor laser elements 10 to 15 is not limited to this.
  • the multiple semiconductor laser elements 10 to 15 may be so-called superluminescent diodes in which no mirror is formed on the light-emitting point side of the optical waveguide.
  • the multiple semiconductor laser elements 10 to 15 may be elements for so-called external resonator type semiconductor lasers in which no mirror is formed on the light-emitting point side of the optical waveguide, but a resonator mirror is placed as a separate component from the multiple semiconductor laser elements 10 to 15 on the emission direction side of the emitted light to perform laser oscillation.
  • the spread angle in the FAST axial direction of each laser beam immediately after it is emitted from each semiconductor laser element is 45 degrees (0.79 rad), and the spread angle in the SLOW axial direction is 10 degrees (0.17 rad).
  • the spread angle is defined as the width (full width) of the angle range in which the light intensity is 1/ e2 of the peak intensity.
  • a current is supplied to the semiconductor laser elements 10-15 from outside the housing 2 via the current introduction terminals 9a, 9b.
  • the semiconductor laser elements 10-15 are connected in series using, for example, metal wires or the like.
  • the current introduction terminal 9a and the current introduction terminal 9b are connected to the semiconductor laser element 10 and the semiconductor laser element 15, respectively, using metal wires or the like.
  • a conductive wiring member may be disposed to relay the distance between them.
  • the current introduction terminal 9a and the wiring member, and the wiring member and the semiconductor laser element 10 may each be connected using a metal wire or the like.
  • One electrode of the semiconductor laser element 10 is connected to an electrode on the submount 20 via a conductive bonding material such as Au or AuSn, and the electrode on the submount 20 is connected to the current introduction terminal 9a by a metal wire or the like.
  • the other electrode of the semiconductor laser element 10 is connected to the semiconductor laser element 11 by a metal wire or the like.
  • One electrode of the semiconductor laser element 11 is connected to an electrode on the submount 21, and the electrode on the submount 21 is connected to the other electrode of the semiconductor laser element 10 by a metal wire or the like.
  • the semiconductor laser elements 11 to 15 are connected to each other in the same manner as the semiconductor laser element 10 and the semiconductor laser element 11.
  • the semiconductor laser element 15 is connected to the current introduction terminal 9b by a metal wire or the like.
  • the multiple semiconductor laser elements 10 to 15 may be connected in parallel to the current introduction terminals 9a and 9b, respectively.
  • the multiple submounts 20-25 are bases on which the multiple semiconductor laser elements 10-15 are mounted, respectively.
  • the multiple submounts 20-25 are mounted on the multiple laser mounting surfaces 80a-85a, respectively.
  • the multiple submounts 20-25 may be fixed, for example, with an inorganic adhesive.
  • the submounts 20-25 are block-shaped members made of insulating materials such as crystals, such as AlN or SiC, or ceramics. Electrodes are formed on the upper surfaces of the block-shaped submounts 20-25, and are each connected to one electrode of the semiconductor laser elements 10-15.
  • the electrodes are made of one or more metal films, such as Ni, Cu, Pt, and Au.
  • the ends including the light-emitting points of the semiconductor laser elements 10-15 may protrude from the ends of the submounts 20-25. This makes it possible to prevent the laser light from interfering with each submount.
  • the multiple FAST axis collimator lenses 30-35 are lenses that collimate the multiple laser beams emitted from the multiple semiconductor laser elements 10-15 in the FAST axis direction (see FIG. 3).
  • the multiple FAST axis collimator lenses 30-35 are disposed between the multiple semiconductor laser elements 10-15 and the multiple prisms 40-45, respectively.
  • the multiple FAST axis collimator lenses 30-35 are mounted, for example, on the multiple submounts 20-25, respectively.
  • the multiple FAST axis collimator lenses 30-35 may be fixed, for example, with an inorganic adhesive.
  • the multiple FAST axis collimator lenses 30-35 collimate the components of the multiple laser beams L0A-L5A in the FAST axis direction, respectively.
  • lenses having a convex cylindrical surface can be used as the multiple FAST axis collimator lenses 30-35.
  • the plurality of FAST-axis collimator lenses 30 to 35 may be, for example, plano-convex cylindrical lenses made of glass with an anti-reflection coating formed on the surface.
  • the positions of the central axes of the FAST-axis collimator lenses 30 and 31 are shifted upward (away from the bottom surface 6a) from the positions of the optical axes of the laser beams L0A and L1A, respectively. For this reason, the propagation direction of the laser beams L0B and L1B emitted from the FAST-axis collimator lenses 30 and 31 has an upward component.
  • the optical axes of the laser beams L0B and L1B are inclined upward with respect to the YZ plane direction parallel to the optical axes of the laser beams L0E and L1E reflected by the reflecting mirrors 70 and 71, respectively, and coupled to the coupling optical system consisting of the condenser lens 90 and the optical fiber 4.
  • the optical axes of the laser beams L0B and L1B include the optical axis coupled to the coupling optical system consisting of the condenser lens 90 and the optical fiber 4, and are inclined upward with respect to the plane parallel to the Y-axis direction.
  • the optical axis coupled to the coupling optical system is the locus of the light ray connecting the principal point of the condenser lens 90 and the core center of the optical fiber.
  • the optical axis coupled to the coupling optical system consisting of the condenser lens 90 and the optical fiber 4 is described as the Z-axis direction for the laser light before being reflected by the reflecting mirrors 70 and 71, and as the Y-axis direction (negative direction) for the laser light after being reflected by the reflecting mirrors 70 and 71. Note that FIG.
  • each FAST axis collimator lens being shifted from the position of the optical axis of each laser beam may be expressed simply as each FAST axis collimator lens being shifted from each laser beam.
  • each FAST axis collimator lens is a cylindrical lens with a focal length of 0.50 mm.
  • the entrance surface (surface facing each semiconductor laser element) of each FAST axis collimator lens is flat, and the exit surface has a convex shape.
  • the thickness (dimension in the Z-axis direction in FIG. 1) of each FAST axis collimator lens is 0.5 mm, the height (dimension in the X-axis direction in FIG. 1) is 0.8 mm, and the width (dimension in the Y-axis direction in FIG. 1) is 4.0 mm.
  • the refractive index of each FAST axis collimator lens is 1.8.
  • the multiple prisms 40 to 45 are deflection elements that deflect the multiple laser beams in the FAST axis direction (the FAST axis direction of the laser beam immediately after being emitted from each semiconductor laser element).
  • the multiple prisms 40 to 45 deflect the multiple laser beams in the height direction (X axis direction) from the bottom surface 6a.
  • the multiple prisms 40, 41 each deflect the multiple laser beams L0B, L1B emitted from the multiple FAST axis collimator lenses 30, 31 in the FAST axis direction and emit the deflected laser beams L0C, L1C.
  • the multiple prisms 40, 41 each deflect the multiple laser beams L0B, L1B in the same direction.
  • Each of the multiple prisms 40 to 45 is disposed between each of the multiple FAST axis collimator lenses 30 to 35 and each of the multiple SLOW axis collimator lenses 60 to 65.
  • the multiple prisms 40-45 are mounted on the multiple element mounting surfaces 80-85 using a bonding material or the like. The characteristics of each prism are appropriately selected according to the required deflection angle (i.e., the amount of change in the angle of the optical axis).
  • a transmissive prism with an apex angle (i.e., the angle between the entrance surface and the exit surface) of 10 degrees and a refractive index of 1.5 is used for each prism.
  • the multiple prisms 40-45 can adjust the angles of the optical axes of the multiple laser beams. The detailed effects of the multiple prisms 40-45 will be described later.
  • the multiple SLOW-axis collimator lenses 60-65 are lenses that collimate the multiple laser beams in the SLOW-axis direction. As shown in FIG. 2 and FIG. 3, for example, the multiple SLOW-axis collimator lenses 60, 61 collimate the multiple laser beams L0C, L1C emitted from the multiple prisms 40, 41 in the SLOW-axis direction, respectively, and emit multiple laser beams L0D, L1D.
  • the multiple SLOW-axis collimator lenses 60-65 are disposed between the multiple FAST-axis collimator lenses 30-35 and the reflecting mirrors 70-75, respectively. In this embodiment, the multiple SLOW-axis collimator lenses 60-65 are disposed on the element mounting surfaces 80-85, respectively.
  • the multiple SLOW-axis collimator lenses 60-65 may be fixed, for example, with an inorganic adhesive.
  • the laser beams L0C and L1C emitted from the semiconductor laser elements 10 and 11 diverge in the SLOW axis direction (the Y axis direction in FIG. 2) as they reach the SLOW axis collimator lenses 60 and 61, respectively.
  • the multiple laser beams emitted from the multiple SLOW axis collimator lenses 60-65 each have a different optical axis position in the FAST axis direction. This allows the multiple laser beams to be spatially combined by the reflecting mirrors 70-75 installed on the element mounting surfaces 80-85 at different heights.
  • the multiple laser beams emitted from the multiple SLOW axis collimator lenses 60-65 each may be parallel to each other.
  • the multiple SLOW axis collimator lenses 60 to 65 can be, for example, lenses having a convex cylindrical surface. More specifically, the multiple SLOW axis collimator lenses 60 to 65 can be, for example, plano-convex cylindrical lenses made of glass with an anti-reflection coating formed on the surface.
  • each SLOW-axis collimator lens is a cylindrical lens with a focal length of 14 mm.
  • the entrance surface (the surface facing each semiconductor laser element) of each SLOW-axis collimator lens is flat, and the exit surface has a convex shape.
  • Each SLOW-axis collimator lens has a thickness (dimension in the Z-axis direction in FIG. 1) of 3.0 mm, a height (dimension in the X-axis direction in FIG. 1) of 3.0 mm, and a width (dimension in the Y-axis direction in FIG. 1) of 4.5 mm.
  • the refractive index of each SLOW-axis collimator lens is 1.5.
  • the multiple reflecting mirrors 70-75 are optical elements that respectively reflect the multiple laser beams emitted from the multiple semiconductor laser elements 10-15.
  • the multiple reflecting mirrors 70-75 reflect the multiple laser beams emitted from the multiple slow axis collimator lenses 60-65.
  • the multiple reflecting mirrors 70, 71 each reflect the multiple laser beams L0D, L1D, thereby emitting multiple laser beams L0E, L1E deflected by 90 degrees.
  • the multiple reflecting mirrors 70-75 are respectively mounted on the multiple element mounting surfaces 80-85.
  • the multiple reflecting mirrors 70-75 may be fixed with an inorganic adhesive.
  • the laser beams (see laser beams L0E and L1E in Figures 2 and 3) emitted from the reflecting mirrors 70 to 75 respectively have parallel propagation directions, do not overlap in the height direction (X-axis direction) from the bottom surface 6a, and overlap in the Z-axis direction.
  • the laser beam L0E emitted from the reflecting mirror 70 and the laser beam L1E emitted from the reflecting mirror 71 have parallel propagation directions, do not overlap in the height direction (X-axis direction) from the bottom surface 6a, and overlap in the Z-axis direction.
  • the laser beams emitted from the reflecting mirrors 70 to 75 respectively propagate parallel to the bottom surface 6a in the negative Y-axis direction.
  • the focusing lens 90 is a lens that focuses the multiple laser beams reflected by the multiple reflecting mirrors 70 to 75.
  • the focusing lens 90 focuses the multiple laser beams so that most of the multiple laser beams emitted from the focusing lens 90 are incident on the end face of the optical fiber 4 and can propagate within the optical fiber 4.
  • an aspheric lens can be used as the focusing lens 90.
  • the optical fiber 4 is a member that guides the laser light from inside the housing 2 to the outside. As described above, the multiple laser lights emitted from the focusing lens 90 are incident on the end face of the optical fiber 4 that is located inside the housing 2.
  • the multiple laser beams emitted from the multiple reflecting mirrors 70-75 have parallel propagation directions, do not overlap in height from the bottom surface 6a, and overlap in positions parallel to the bottom surface 6a. This allows spatial multiplexing by the reflecting mirrors 70-75 mounted on the element mounting surfaces 80-85 at different heights. Therefore, the multiple laser beams incident on the focusing lens 90 can be efficiently focused on the end surface of the optical fiber 4 by the focusing lens 90.
  • the semiconductor laser device 1 includes a housing 2 having a flat bottom surface 6a, a plurality of semiconductor laser elements 10-15 arranged in the housing 2, a plurality of FAST-axis collimator lenses 30-35 that collimate the plurality of laser beams emitted from the plurality of semiconductor laser elements 10-15 in the FAST-axis direction, a plurality of prisms 40-45 that deflect the plurality of laser beams in the FAST-axis direction, and a plurality of SLOW-axis collimator lenses 60-65 that collimate the plurality of laser beams in the SLOW-axis direction.
  • Each of the plurality of prisms 40-45 is arranged between each of the plurality of FAST-axis collimator lenses 30-35 and each of the plurality of SLOW-axis collimator lenses 60-65.
  • the plurality of laser beams emitted from the plurality of SLOW-axis collimator lenses 60-65 have different optical axis positions in the FAST-axis direction (the FAST-axis direction of the laser beams emitted from the plurality of semiconductor laser elements 10-15).
  • the multiple laser beams emitted from the multiple slow axis collimator lenses 60 to 65 each have a different optical axis position in the fast axis direction. This allows the multiple laser beams to be spatially multiplexed. In this way, high-output laser beams obtained by overlapping multiple laser beams can be input into an optical fiber.
  • FIG. 4 is a side view showing the optical paths of the laser beams L0A to L0C according to this embodiment.
  • FIG. 4 shows the optical path of the laser beam emitted from the light emitting point 10e until it is emitted from the prism 40.
  • the optical axes of the laser beams L0A to L0C are shown by dashed lines, and the contours of the laser beams L0A to L0C are shown by dashed lines.
  • FIG. 5 is a graph showing the relationship between the installation angle of the prism and the deflection angle of the laser beam deflected by the prism.
  • Fig. 5 indicates the installation angle of the prism (i.e., the rotation angle around the axis parallel to the Y axis in each figure), and the vertical axis indicates the deflection angle of the laser light deflected by the prism (i.e., the amount of change in the angle of the optical axis of the laser light before and after passing through the prism).
  • Fig. 5 shows the relationship between the installation angle and the deflection angle for four prisms with apex angles ( ⁇ v) of 10 degrees, 20 degrees, 30 degrees, and 40 degrees.
  • the position of the central axis of the FAST axis collimator lens 30 is shifted upward (away from the bottom surface 6a shown in Figure 3, etc.) by ⁇ d from the position of the optical axis of the laser light L0A.
  • an angle shift occurs in the optical axis of the laser light L0B emitted from the FAST axis collimator lens 30.
  • the propagation direction of the laser light L0B emitted from the FAST axis collimator lens 30 has an upward component.
  • the angle of the optical axis of each such laser light can be deflected to correct it to the desired angle.
  • the relationship between the incidence angle ⁇ 11 and the exit angle ⁇ 12 of the laser light L0B incident on the entrance surface of the prism 40, and the relationship between the incidence angle ⁇ 21 and the exit angle ⁇ 22 of the laser light L0B incident on the exit surface of the prism 40 are each determined based on Snell's law. Therefore, by appropriately selecting the apex angle and refractive index of the prism 40 and appropriately adjusting the installation angle of the prism 40, the deflection angle of the laser light L0B can be adjusted to a desired angle.
  • the ratio of the change in the deflection angle of the laser light to the change in the installation angle of the prism is relatively small.
  • the change in the deflection angle when the installation angle is changed by 30 degrees from 10 degrees to 40 degrees is about 1.3 degrees.
  • the change in the deflection angle relative to the change in the installation angle is about 0.043 times.
  • the change in the deflection angle relative to the change in the installation angle is twice as much. In this way, by deflecting the laser light using a prism, it is easy to fine-tune the deflection angle of the laser light.
  • the amount of change in the deflection angle of the laser light when the installation angle of the prism is changed depends on the size of the apex angle of the prism. For example, as described above, in a prism with an apex angle of 10 degrees, the amount of change in the deflection angle when the installation angle is changed by 30 degrees from 10 degrees to 40 degrees is about 1.3 degrees, but in a prism with an apex angle of 20 degrees, the amount of change in the deflection angle when the installation angle is changed by 30 degrees from 15 degrees to 45 degrees is about 2.5 degrees.
  • the amount of change in the deflection angle when the installation angle is changed by 30 degrees from 22 degrees to 52 degrees is about 3.7 degrees.
  • the amount of change in the deflection angle when the installation angle is changed by 30 degrees from 30 degrees to 60 degrees is about 5.3 degrees. In other words, as the apex angle of the prism increases, the amount of change in the deflection angle relative to the change in the installation angle increases.
  • the amount of change in the deflection angle can be changed depending on the apex angle of the prism, so by selecting a prism with an appropriate apex angle, the amount of change in the deflection angle relative to a change in the installation angle can be adjusted. For example, by selecting a prism with a small apex angle, the amount of change in the deflection angle relative to a change in the installation angle can be reduced, making it easier to fine-tune the deflection angle. Also, by selecting a prism with a large apex angle, the amount of change in the deflection angle relative to a change in the installation angle can be increased, widening the adjustment range of the deflection angle.
  • active alignment can be used as a method for adjusting the installation angle of the prism. That is, the installation angle of each prism is adjusted while emitting laser light from each semiconductor laser element. Then, after adjustment of the installation angle of each prism is completed, each prism is fixed to each element installation surface.
  • a bonding material such as a photosensitive adhesive that hardens when irradiated with ultraviolet light can be used. In this way, by applying a bonding material between each prism and each element installation surface before active alignment, and irradiating the bonding material with ultraviolet light after active alignment is completed, deviation in the installation angle when each prism is fixed can be suppressed.
  • the multiple semiconductor laser elements may include a first semiconductor laser element that emits a first laser light.
  • the multiple FAST axis collimator lenses may include a first FAST axis collimator lens that collimates the first laser light in the FAST axis direction.
  • the multiple prisms may include a first prism that deflects the first laser light.
  • the central axis of the first FAST axis collimator lens may be shifted from the optical axis of the first laser light in a first direction along the FAST axis direction, and the first prism may deflect the first laser light in a direction opposite to the first direction. This allows at least a portion of the deflection of the first laser light in the FAST axis direction by the first FAST axis collimator lens to be offset by the first prism.
  • each of the multiple prisms 40 to 45 may deflect multiple laser beams in the same direction.
  • the semiconductor laser device 1 may also include multiple reflecting mirrors 70-75 that reflect the multiple laser beams emitted from the multiple slow axis collimator lenses 60-65, respectively.
  • the multiple laser beams emitted from the multiple reflecting mirrors 70 to 75 are collimated laser beams and are parallel to each other.
  • the optical axis is precisely adjusted by the prisms 40 to 45. Therefore, all of the multiple laser beams are precisely parallel to the optical axis toward the optical fiber 4.
  • the laser beam bundle containing the multiple laser beams can be a laser beam bundle with a small beam parameter product and high radiance. Such a laser beam bundle is incident on the optical fiber 4 with high coupling efficiency by the focusing lens 90. Therefore, a laser beam with high optical output can be emitted from the optical fiber 4 of the semiconductor laser device 1.
  • the housing 2 may be an airtight package that hermetically seals the multiple semiconductor laser elements 10-15, the multiple fast axis collimator lenses 30-35, the multiple prisms 40-45, and the multiple slow axis collimator lenses 60-65.
  • FIG. 6 is a side view showing the optical paths of laser beams L0A-L0E and L1A-L1E in the semiconductor laser device according to this modification.
  • the positions of the central axes of the FAST axis collimator lenses 30, 31 are shifted downward (toward the bottom surface 6a) from the positions of the optical axes of the laser beams L0A, L1A, respectively. Therefore, the propagation direction of the laser beams L0A, L1A emitted from the FAST axis collimator lenses 30, 31 has a downward component.
  • the optical axis of the laser beams L0A, L1A is inclined downward with respect to the YZ plane parallel to the optical axis of the laser beam reflected by the reflecting mirror and coupled to the coupling optical system consisting of the focusing lens 90 and the optical fiber 4. Note that while FIG.
  • each prism deflects the propagation direction of each laser light in a direction parallel to the Z-axis direction.
  • each of such prisms can be a prism having a shape similar to that of the prisms in embodiment 1, which are inverted upside down.
  • the semiconductor laser device according to this modified example also achieves the same effects as the semiconductor laser device 1 according to the first embodiment.
  • the configuration of the semiconductor laser device according to this modified example is not limited to this.
  • the position of the central axis of some FAST axis collimator lenses may be shifted upward from the position of the optical axis of the laser light
  • the position of the central axis of other FAST axis collimator lenses may be shifted downward from the position of the optical axis of the laser light.
  • the propagation direction of the laser light can be adjusted to the desired direction by using an appropriate prism depending on the propagation direction of the laser light.
  • FIG. 7 is a side view showing the optical paths of the laser light L0A-L0E and L1A-L1E in the semiconductor laser device according to this modification.
  • the propagation direction of the multiple laser beams L0A, L1A emitted from the multiple semiconductor laser elements 10, 11 in this modified example has a component in the height direction (X-axis direction) from the bottom surface 6a.
  • the propagation direction of the laser beams L0A, L1A has an upward component.
  • the semiconductor laser device includes a multi-stage base 108.
  • the multi-stage base 108 has a plurality of element mounting surfaces 80, 81 and laser mounting surfaces 180a, 181a.
  • the laser mounting surfaces 180a, 181a according to this modification are inclined with respect to the bottom surface 6a.
  • the propagation direction of the laser light L0A, L1A from the semiconductor laser elements 10, 11 respectively mounted on the laser mounting surfaces 180a, 181a has a component in the height direction from the bottom surface 6a.
  • the semiconductor laser elements are horizontally installed on the multi-stage base 8 as in this embodiment and modified example 1, in order to make the laser beams parallel to the Z-axis direction, it was necessary to reverse the up and down of the prisms used depending on the difference in the direction of deviation of the FAST-axis collimator lenses.
  • the propagation direction of the laser beams L0A and L1A from the semiconductor laser elements 10 and 11 is the direction from the bottom surface 6a to the upward direction.
  • the optical axis direction of the laser beams L0B and L1B that pass through the FAST-axis collimator lenses 30 and 31 can be made to face upward.
  • the semiconductor laser element 10 is installed so as to be parallel to the laser installation surface 180a, which increases in height from the bottom surface 6a as it approaches the prism 40 (as it progresses in the positive direction in the Z-axis direction), and the FAST-axis collimator lens 30 is deviated downward with respect to the laser beam L0A.
  • the laser light L0B is deflected downward with respect to the laser light L0A, but propagates in a direction inclined upward with respect to the Z-axis direction.
  • the semiconductor laser element 11 is installed so as to be parallel to the laser installation surface 181a.
  • the laser installation surface 181a is inclined so as to be parallel to the laser installation surface 180a.
  • the inclination angle of the laser installation surface 181a with respect to the bottom surface 6a is the same as the inclination angle of the laser installation surface 180a. Since the FAST axis collimator lens 31 is shifted upward with respect to the laser light L1A, the laser light L1B is deflected upward with respect to the laser light L1A.
  • the laser light L1B propagates in a direction inclined upward with respect to the Z-axis direction. Since both the laser light L0B and the laser light L1B face upward with respect to the Z-axis, the propagation direction of each laser light after passing through each prism can be deflected to a direction parallel to the Z-axis direction by installing each prism in the same direction (up-down direction) as in the first embodiment and adjusting only the installation angle. In other words, regardless of the direction of misalignment of the installation positions of each FAST axis collimator lens, multiple prisms installed in the same direction can collimate multiple laser beams in the Z-axis direction.
  • the propagation direction of the laser beams L0A and L1B from the semiconductor laser elements 10 and 11 is downward with respect to the Z-axis direction
  • the propagation direction of the laser beams L0C and L1C emitted from the prisms 40 and 41 can be deflected in a direction parallel to the Z-axis direction in the same manner as described above.
  • the height of each laser light from the bottom surface 6a can be adjusted by adjusting the position of each prism in the optical axis direction of each laser light.
  • FIG. 8 is a side view showing the optical paths of the laser beams L0A-L0E and L1A-L1E in the semiconductor laser device according to this modification.
  • the semiconductor laser device of this modified example has multiple rear prisms 50, 51.
  • the rear stage prisms 50, 51 are deflection elements that deflect the multiple laser beams L0C, L1C emitted from the multiple prisms 40, 41 in the FAST axis direction.
  • the multiple rear stage prisms 50, 51 deflect the multiple laser beams L0C, L1C in the height direction (X axis direction) from the bottom surface 6a in the opposite direction to the prisms 40, 41.
  • Each of the multiple rear stage prisms 50-51 is disposed between each of the multiple prisms 40, 41 and each of the multiple SLOW axis collimator lenses.
  • the multiple rear stage prisms 50, 51 are mounted on the multiple element mounting surfaces 80, 81 using a bonding material or the like. The characteristics of each rear stage prism are appropriately selected according to the required deflection angle, etc.
  • the semiconductor laser device according to this modified example also achieves the same effects as the semiconductor laser device 1 according to the first embodiment.
  • the semiconductor laser device also includes a plurality of rear-stage prisms 50, 51.
  • the plurality of semiconductor laser elements 10, 11 include a first semiconductor laser element that emits a first laser light
  • the plurality of prisms 40, 41 include a first prism that deflects the first laser light
  • the plurality of rear-stage prisms 50, 51 include a first rear-stage prism that deflects the first laser light.
  • the direction of deflection of the first laser light by the first rear-stage prism is opposite to the direction of deflection of the first laser light by the first prism.
  • each of the semiconductor laser elements 10, 11 according to this modified example is an example of a first semiconductor laser element
  • each of the plurality of prisms 40, 41 is an example of a first prism
  • each of the plurality of rear-stage prisms 50, 51 is an example of a first rear-stage prism.
  • the semiconductor laser device according to this modification includes such rear prisms 50, 51, thereby increasing the degree of freedom in adjusting the angle of the optical axis of each laser beam.
  • the rear prisms are included, thereby making it possible to adjust the angle of the optical axis of each laser beam and the optical axis position in the FAST axis direction of each laser beam (the FAST axis direction of the laser beam immediately after being emitted from each semiconductor laser element).
  • the semiconductor laser elements 10, 11 are installed parallel to the bottom surface 6a, and the laser beams L0A, L1A are parallel to the bottom surface 6a.
  • each FAST axis collimator lens is shifted upward with respect to each laser beam, each laser beam is deflected upward.
  • the heights of the optical axes of the laser beams L0B and L1B emitted from the FAST axis collimator lenses 30 and 31, respectively, from the bottom surface 6a gradually increase as they propagate.
  • the laser beams L0B and L1B are deflected downward by the prisms 40 and 41, respectively.
  • the heights of the laser beams L0C and L1C from the bottom surface 6a gradually decrease.
  • the laser beams L0C and L1C are deflected again by the rear-stage prisms 50 and 51, respectively.
  • the heights of the laser beams L0C2 and L1C2 from the bottom surface 6a become the same as the heights of the laser beams L0A and L1A, respectively, and the optical axes of the laser beams L0C2 and L1C2 are parallel to the bottom surface 6a.
  • the prisms 40, 41 and the rear stage prisms 50, 51 in response to the height misalignment of each FAST axis collimator lens, the height of the laser beams L0C2, L1C2 from the base can be made the same as the height of L0A, L1A, and the optical axes of the laser beams L0C2, L1C2 can be made parallel to the bottom surface 6a.
  • FIG. 8 shows that the directions of deflection of the multiple laser beams L0C, L1C by the multiple rear prisms 50, 51 are the same when viewed from the Y-axis direction. Note that the directions of deflection of the multiple laser beams L0C, L1C by the multiple rear prisms 50, 51 do not have to be the same, and the multiple laser beams L0C2, L1C2 do not have to be parallel. In each of the multiple optical systems corresponding to the multiple laser beams, it is sufficient that the relationship between the direction of deflection by the prism and the direction of deflection by the rear prism is maintained. For example, in the semiconductor laser device shown in FIG. 8, the prism 40 and the rear prism 50 may be rotated 180 degrees in the YZ plane.
  • the semiconductor laser device includes a rear prism corresponding to each laser light.
  • the number of laser lights and the number of rear prisms are the same, but the number of rear prisms is not limited to this.
  • the number of rear prisms may be one or more.
  • the semiconductor laser device according to this modified example may include at least one rear prism corresponding to at least one laser light.
  • FIG. 9 is a side view showing the configuration of a prism mounting surface 80d in the semiconductor laser device according to this modification.
  • the prism 40 according to this modified example is mounted on the prism mounting surface 80d.
  • the prism mounting surface 80d has a curved shape.
  • the prism mounting surface 80d has a cylindrical concave curved shape.
  • the shape of the bottom surface of the prism 40 (the surface facing the prism mounting surface 80d) is rectangular.
  • the prism 40 is fixed to the prism mounting surface 80d using a bonding material B0 such as a photosensitive adhesive shown in FIG. 9.
  • the prism mounting surface 80d may also have a cylindrical convex curved shape. In this case, it is possible to bring the bottom surface of the prism 40 and the prism mounting surface 80d into contact at a linear contact portion. This allows the installation angle of the prism 40 to be adjusted while the bottom surface of the prism 40 and the prism mounting surface 80d are in contact at a linear contact portion.
  • the shape of the prism mounting surface 80d is cylindrical, but the shape of the prism mounting surface 80d is not limited to this.
  • the cross-sectional shape of the prism mounting surface 80d (the shape in a cross section parallel to the ZX plane) may be elliptical.
  • the bottom surface of the prism 40 may have a concave curved shape
  • the prism mounting surface 80d may have a convex portion with a rectangular top surface.
  • the installation angle of the prism 40 can be adjusted with two sides of the top surface of the prism mounting surface 80d in contact, achieving the same effect as this modified example.
  • the installation angle of the prism 40 can be adjusted with the bottom surface of the prism 40 and the prism mounting surface 80d in contact at a linear contact portion.
  • Embodiment 2 A semiconductor laser device according to embodiment 2 will be described.
  • the semiconductor laser device according to this embodiment differs from the semiconductor laser device 1 according to embodiment 1 in the installation mode of each prism, but is the same in other respects.
  • the semiconductor laser device according to this embodiment will be described below, focusing on the differences from the semiconductor laser device 1 according to embodiment 1.
  • Fig. 10 and Fig. 11 are a perspective view and a plan view, respectively, showing the configuration of a semiconductor laser device 201 according to the present embodiment.
  • the semiconductor laser device 201 includes a plurality of semiconductor laser elements 10, 11, a plurality of submounts 20, 21, a plurality of FAST-axis collimator lenses 30, 31, a plurality of prisms 40, 41, a plurality of SLOW-axis collimator lenses 60, 61, a plurality of reflecting mirrors 70, 71, and a multi-stage base 8.
  • the semiconductor laser device 201 further includes a housing 2, current introduction terminals 9a, 9b, an optical fiber 4, and a focusing lens 90, similar to the semiconductor laser device 1 according to the first embodiment.
  • the multi-stage base 8 has multiple stages.
  • Each of the multiple stages of the multi-stage base 8 has an element mounting surface (element mounting surface 80 or element mounting surface 81) parallel to the bottom surface 6a (see Figure 1, etc.) and a side surface (side surface 80s or side surface 81s) erected on the element mounting surface.
  • each of the multiple prisms 40, 41 is installed on the side surface. That is, the prism 40 is installed on the side surface 80s, and the prism 41 is installed on the side surface 81s.
  • the SLOW axis of each laser light incident on each of the multiple prisms 40, 41 is perpendicular to the side surface on which the prism is installed.
  • prisms 40 and 41 are fixed to side surfaces 80s and 81s, respectively, with bonding material B0.
  • Figures 12 and 13 are diagrams respectively showing the state of the prism 40 before and after the bonding material B0 hardens when the prism 40 is fixed to the element mounting surface 80 using the bonding material B0.
  • Figure 13 the state of the prism before the bonding material B0 hardens is also shown by a dashed line.
  • the bonding material B0 shrinks when it hardens. Therefore, as shown in Figure 13, when the prism 40 is mounted on the element mounting surface 80, the mounting angle of the prism 40 may change before and after it hardens. In other words, as the bonding material B0 hardens, the prism 40 may rotate around an axis parallel to the Y-axis direction. Therefore, as the bonding material B0 hardens, the optical axis of the laser light may change.
  • multiple prisms 40, 41 are installed on side surfaces 80s, 81s, respectively, so that rotation of each prism around an axis parallel to the Y-axis direction can be suppressed. Therefore, changes in the deflection angle of each laser light in the FAST axis direction of each prism due to hardening of the bonding material B0 can be suppressed.
  • each of the side surfaces 80s, 81s can be perpendicular to the SLOW axis direction (Y axis direction) of each laser light.
  • the rotation direction of the prisms 40, 41 installed on the side surfaces 80s, 81s, respectively can be limited to a rotation direction centered on an axis parallel to the Y axis direction, so that the amount of deflection in only the FAST axis direction can be adjusted by rotating the prisms 40, 41.
  • each prism can be a flat surface parallel to each side, so there is no need to tilt it as shown in FIG. 13, and each prism can be stably fixed to each side. Furthermore, by fixing the surface facing each side of each prism parallel to each side, it is possible to prevent each prism from tilting with respect to the optical axis as the bonding material B0 hardens.
  • FIG. 14 and 15 are a perspective view and a plan view, respectively, showing the configuration of the semiconductor laser device 201a according to this modification.
  • the semiconductor laser device 201a of this modified example includes multiple semiconductor laser elements 10, 11, multiple submounts 20, 21, multiple FAST axis collimator lenses 30, 31, multiple prisms 40, 41, multiple SLOW axis collimator lenses 60, 61, multiple reflecting mirrors 70, 71, and a multi-stage base 8a.
  • the multi-stage base 8a has multiple stages.
  • Each of the multiple stages of the multi-stage base 8a has an element mounting surface (element mounting surface 80 or element mounting surface 81) parallel to the bottom surface 6a (see Figure 1, etc.) and a side surface (side surface 80s or side surface 81s) erected on the element mounting surface.
  • the side surfaces 80s and 81s are perpendicular to the element mounting surfaces 80 and 81, respectively.
  • Each of the multiple stages of the multi-stage base 8a has a protrusion (protrusion 80p or protrusion 81p) that protrudes from the element mounting surface and faces the side surface.
  • each of the multiple prisms 40, 41 is installed on the corresponding side surface and the corresponding protrusion. That is, the prism 40 is installed on the side surface 80s and the protrusion 80p, and the prism 41 is installed on the side surface 81s and the protrusion 81p.
  • each protrusion and each side is greater than the width of each prism.
  • the prism 40 is fixed to the side surface 80s and the protrusion 80p with the bonding material B0, and the prism 41 is fixed to the side surface 81s and the protrusion 81p with the bonding material B0.
  • the multiple protrusions 80p, 81p may each have a surface that faces the side surface 80s, 81s and is parallel to the side surface 80s, 81s. This makes it easier to install each prism.
  • each protrusion may have a surface that is flush with the side surface of the other adjacent step (the step that is shorter among the other adjacent steps). In other words, each protrusion may form part of the side surface of the other adjacent step. This allows each protrusion to be used as a mounting surface for a prism that is placed on the other step. Therefore, the bonding area of the prism can be further increased.
  • FIG. 16 is a perspective view showing the configuration of a semiconductor laser device 301 according to this embodiment.
  • FIG. 17 is a side view showing the configuration of the semiconductor laser element 10 and the like according to this embodiment. Note that in FIG. 17, a cross section of the airtight package P10 is shown in order to show the internal structure of the airtight package P10.
  • the semiconductor laser device 301 includes a plurality of airtight packages P10, P11, a plurality of prisms 40, 41, a plurality of SLOW axis collimator lenses 60, 61, a plurality of reflecting mirrors 70, 71, and a multi-stage base 308.
  • the semiconductor laser device 301 further includes a housing 2, current introduction terminals 9a, 9b, an optical fiber 4, and a focusing lens 90, similar to the semiconductor laser device 1 according to the first embodiment.
  • the multi-stage base 308 of this embodiment differs from the multi-stage base 8a of the modified example of embodiment 2 in that each of the element mounting surfaces 80, 81 includes a laser mounting surface.
  • the airtight package P10 is a package that hermetically seals the semiconductor laser element 10 and the FAST axis collimator lens 30 into which the laser light emitted from the semiconductor laser element is incident.
  • the airtight package P10 also hermetically seals the submount 20.
  • the airtight package P10 has a first package P21, a light-transmitting window P17, and a lid P02.
  • the airtight package P10 further has an anode extraction electrode P31 and a cathode extraction electrode P34.
  • the first package P21 is a container that constitutes the main body of the airtight package P10 and has two openings.
  • the light-transmitting window P17 is a light-transmitting member through which the laser light L0B passes, and covers one opening of the first package P21.
  • the lid P02 is a lid that covers the other opening of the first package P21.
  • the anode extraction electrode P31 is an electrode for connecting to a current introduction terminal 9a arranged outside the airtight package P10, and is arranged outside the first package P21.
  • the cathode extraction electrode P34 is an electrode for connecting to a current introduction terminal 9b arranged on the top surface of the first package P21, and is arranged on the top surface of the first package P21.
  • the anode extraction electrode P31 and the cathode extraction electrode P34 are electrically connected to the semiconductor laser element 10 arranged inside the first package P21 by metal wiring, via electrodes, and metal wires.
  • the semiconductor laser element 10, the submount 20, and the FAST axis collimator lens 30 are fixed in the airtight package P10 with an inorganic adhesive.
  • the airtight package P11 is a package that hermetically seals the semiconductor laser element 11 and the FAST axis collimator lens 31 (see FIG. 14 etc. for the semiconductor laser element 11 and the FAST axis collimator lens 31). In this embodiment, the airtight package P11 also hermetically seals the submount 21 (see FIG. 14 etc. for the submount 21).
  • the airtight package P11 has a similar configuration to the airtight package P10.
  • the semiconductor laser device 301 can prevent foreign matter such as organic matter from entering the periphery of each semiconductor laser element.
  • the semiconductor laser element 10 includes an AlGaInN-based semiconductor and emits laser light with a wavelength corresponding to blue light to ultraviolet light, deterioration of the semiconductor laser element 10 caused by organic matter adhering to the light emitting point 10e of each semiconductor laser element 10 due to a photochemical reaction can be prevented.
  • each airtight package may hermetically seal multiple pairs of semiconductor laser elements and FAST axis collimator lenses.
  • the semiconductor laser device may include one or more airtight packages.
  • Each of the one or more airtight packages may hermetically seal one or more semiconductor laser elements among the multiple semiconductor laser elements and one or more FAST-axis collimator lenses among the multiple FAST-axis collimator lenses into which one or more laser beams emitted from the one or more semiconductor laser elements are respectively incident.
  • Each of the one or more semiconductor laser elements and each of the one or more FAST-axis collimator lenses may be fixed with an inorganic adhesive.
  • Each of the one or more airtight packages may have a light-transmitting window, and one or more laser beams emitted from the one or more semiconductor laser elements may pass through the light-transmitting window.
  • FIG. 4 A semiconductor laser device according to a fourth embodiment will be described.
  • the semiconductor laser device according to this embodiment differs from the semiconductor laser device according to the second modification of the first embodiment in that a plurality of semiconductor laser elements are installed on the same plane, but is the same in other respects.
  • the semiconductor laser device according to this embodiment will be described below with reference to Figs. 18 and 19, focusing on the differences from the semiconductor laser device according to the second modification of the first embodiment.
  • Figs. 18 and 19 are respectively a perspective view and a side view showing the configuration of a semiconductor laser device 401 according to this embodiment.
  • Fig. 19 is a side view showing the configuration of a semiconductor laser element 10 and the like according to this embodiment.
  • the semiconductor laser device 401 includes a housing 2, a plurality of semiconductor laser elements 10-12, a plurality of reflecting mirrors 70-72, a focusing lens 90, a plurality of element mounting surfaces 80-82, a plurality of submounts 20-22, a plurality of FAST axis collimator lenses 30-32, a plurality of prisms 40-42, a plurality of SLOW axis collimator lenses 60-62, a laser mounting surface 407a, and an optical fiber 4.
  • current introduction terminals and the like are omitted from the illustration in FIG. 18 and FIG. 19.
  • the semiconductor laser device 401 has a multi-stage base 408 having multiple element mounting surfaces 80 to 82 and a laser mounting surface 407a.
  • the multi-stage base 408 has a lower surface 408ba, and is placed on the bottom surface 6a so that the lower surface 408ba is parallel to the bottom surface 6a.
  • the multi-stage base 408 has multiple steps in a staircase shape.
  • Each of the multiple steps of the multi-stage base 408 has a surface parallel to the lower surface 408ba, and the surfaces parallel to the lower surface 408ba correspond to each of the multiple element mounting surfaces 80-82. Therefore, each of the multiple element mounting surfaces 80-82 is parallel to the bottom surface 6a. Also, each of the multiple element mounting surfaces 80-82 is parallel to one another and is not on the same plane.
  • the semiconductor laser elements 10-12 are mounted on a laser mounting surface 407a that is inclined with respect to the bottom surface 6a.
  • the laser mounting surface 407a is inclined, for example, at an angle of 5 degrees to 20 degrees with respect to the bottom surface 6a.
  • the propagation direction of the laser beams L0A-L2A emitted from the semiconductor laser elements 10-12 has a component in the height direction from the bottom surface 6a.
  • the propagation direction of the laser beams L0A-L2A emitted from the semiconductor laser elements 10-12 has a component in the upward direction (positive direction in the X-axis direction).
  • the semiconductor laser elements 10-12 are arranged on the same plane. This makes it possible to easily mount the semiconductor laser elements 10-12.
  • the multiple FAST axis collimator lenses 30-32 collimate the multiple laser beams L0A-L2A emitted from the multiple semiconductor laser elements 10-12, respectively, in the FAST axis direction, and emit multiple laser beams L0B-L2B collimated in the FAST axis direction.
  • the multiple prisms 40-42 deflect the multiple laser beams L0B-L2B in the FAST axis direction (the FAST axis direction of the laser beam immediately after it is emitted from each semiconductor laser element) and emit the multiple laser beams L0C-L2C.
  • the multiple SLOW axis collimator lenses 60-62 collimate the multiple laser beams L0C-L2C in the SLOW axis direction, respectively, and emit the multiple collimated laser beams L0D-L2D.
  • the multiple reflecting mirrors 70-72 reflect the multiple laser beams L0D-L2D, respectively, and emit multiple laser beams L0E-L2E.
  • the multiple semiconductor laser elements 10-12 are arranged at the same height.
  • the optical axes of the multiple laser beams L0A-L2A immediately after being emitted from the multiple semiconductor laser elements 10-12 are at the same height (that is, the heights of the multiple light emitting points 10e-12e are at the same height).
  • the heights of the laser beams L0C-L2C emitted from the multiple prisms 40-42 from the bottom surface 6a can be made to differ.
  • each of the prisms 40-42 increases as the height of each prism from the bottom surface 6a increases. This allows the distance of each of the prisms 40-42 from each semiconductor laser element to be varied depending on the height of the installation position of each prism.
  • the prisms 40-42 are installed near the ends of the element installation surfaces 80-82 that are closer to the semiconductor laser elements 10-12.
  • the prisms 40-42 may also be installed in areas on the laser installation surface 407a near the ends of each element installation surface.
  • each semiconductor laser element increases as the height of each element mounting surface from the bottom surface 6a increases. Also, as the height of each element mounting surface from the bottom surface 6a increases, the length of each element mounting surface in the propagation direction (Z-axis direction) of each laser light (L0C to L2C, L0D to L2D) decreases. In other words, the element mounting surface 80 to 82 that is higher from the bottom surface 6a has a shorter length in the propagation direction (Z-axis direction) of the laser light.
  • the end of each element mounting surface is directly connected to the laser mounting surface 407a. This allows each laser light to propagate along the laser mounting surface 407a and each element mounting surface.
  • each optical element on the laser mounting surface 407a or each element mounting surface, it is possible to control each laser light.
  • the laser mounting surface 407a is inclined relative to the bottom surface 6a, and the height from the bottom surface 6a decreases as it moves away from the end of each element mounting surface.
  • the heights from the bottom surface 6a at the positions where the reflecting mirrors 70 to 72 are installed are different from each other.
  • the heights from the bottom surface 6a at the installation positions increase in the order of reflecting mirrors 70, 71, and 72.
  • the distance in the first direction (the X-axis direction in this embodiment) from the light emitting point 10e of the semiconductor laser element 10 to the optical axis of the laser light L0D incident on the reflecting mirror 70 is different from the distance in the first direction from the light emitting point 10e of the semiconductor laser element 10 to the optical axis of the laser light L1D incident on the reflecting mirror 71.
  • the distances in the first direction (the X-axis direction in this embodiment) from the light emitting point 10e of the semiconductor laser element 10 to the optical axes of the laser light L0D, L1D incident on the reflecting mirrors 70, 71, respectively, are different from each other.
  • the laser beams L0C to L2C and L0D to L2D propagate in the positive direction of the Z axis between the prisms 40 to 42 and the reflecting mirrors 70 to 72, respectively, parallel to the bottom surface 6a and parallel to the element mounting surfaces 80 to 82.
  • the laser beams L0D to L2D also propagate parallel to each other.
  • the laser beams L0B to L2B propagate parallel to the laser mounting surface 407a between the semiconductor laser elements 10 to 12 and the prisms 40 to 42. In addition, the laser beams L0B to L2B propagate parallel to each other between the semiconductor laser elements 10 to 12 and the prisms 40 to 42.
  • the laser beams L0E to L2E propagate in the negative Y-axis direction between the reflecting mirrors 70 to 72 and the focusing lens 90, parallel to the bottom surface 6a.
  • the spot size in the SLOW axis direction of each laser light emitted from the multiple SLOW axis collimator lenses 60-62 increases as the optical path length from each semiconductor laser element to each SLOW axis collimator lens becomes longer.
  • the optical path length from each of the multiple SLOW axis collimator lenses 60-62 to each of the multiple semiconductor laser elements 10-12 may be aligned. Accordingly, the Z axis direction positions of each of the SLOW axis collimator lenses 60-62 differ. As shown in FIG. 19, the Z axis direction positions of the SLOW axis collimator lens 60 and the SLOW axis collimator lens 62 differ by ⁇ L.
  • the distance in the Z-axis direction from each SLOW-axis collimator lens to each semiconductor laser element may become smaller as the height of each SLOW-axis collimator lens from the bottom surface 6a increases. This makes it possible to align the optical path length from each SLOW-axis collimator lens to each semiconductor laser element.
  • the semiconductor laser device 401 having the above-mentioned configuration also achieves the same effects as the semiconductor laser device 1 according to the first embodiment.
  • the multiple semiconductor laser elements 10-12 are placed on the same plane, which makes it easier to mount the multiple semiconductor laser elements 10-12.
  • the height of the bond portion of the wire bond can be aligned, which makes wire bonding easier.
  • the heat dissipation characteristics change depending on the distance between the semiconductor laser element and the bottom surface 6a.
  • the difference in heat dissipation characteristics of the multiple semiconductor laser elements 10-12 can be reduced. This makes it possible to reduce the difference in characteristics such as the wavelengths of the laser light L0A-L2A from the multiple semiconductor laser elements 10-12.
  • FIG. 5 A semiconductor laser device according to the fifth embodiment will be described.
  • the semiconductor laser device according to the present embodiment differs from the semiconductor laser device 401 according to the fourth embodiment mainly in that the laser installation surface is parallel to the bottom surface.
  • the semiconductor laser device according to the present embodiment will be described below with reference to Figs. 20 to 22, focusing on the differences from the semiconductor laser device 401 according to the fourth embodiment.
  • Figs. 20, 21, and 22 are respectively a perspective view, a plan view, and a side view showing the configuration of the semiconductor laser device 501 according to the present embodiment.
  • the semiconductor laser device 501 includes a housing 2, a plurality of semiconductor laser elements 10-15, a plurality of reflecting mirrors 70-75, a condenser lens 90, and a plurality of element mounting surfaces 80-85.
  • the semiconductor laser device 501 further includes submounts 20-25, FAST axis collimator lenses 30-35, a front stage prism 550, prisms 41-45, SLOW axis collimator lenses 60-65, an optical fiber 4, a laser base 7, current introduction terminals 9a, 9b, and a wiring member 9c.
  • the semiconductor laser device 501 has a multi-stage base 508 having multiple element mounting surfaces 80 to 85.
  • the multi-stage base 508 has a lower surface 508ba, and is placed on the bottom surface 6a so that the lower surface 508ba is parallel to the bottom surface 6a.
  • the multi-stage base 508 has multiple steps in a staircase shape.
  • Each of the multiple steps of the multi-stage base 508 has a surface parallel to the lower surface 508ba, and the surfaces parallel to the lower surface 508ba correspond to each of the multiple element mounting surfaces 80 to 85. Therefore, each of the multiple element mounting surfaces 80 to 85 is parallel to the bottom surface 6a. Also, each of the multiple element mounting surfaces 80 to 85 is parallel to one another and is not on the same plane.
  • the laser base 7 is a base on which multiple semiconductor laser elements 10 to 15 are mounted.
  • the laser base 7 is a rectangular plate-shaped member having a flat laser mounting surface 7a. Multiple semiconductor laser elements 10 to 15 are mounted on the laser mounting surface 7a.
  • the laser base 7 is made of, for example, the same material as the bottom 6 of the housing 2.
  • a current is supplied to the semiconductor laser elements 10-15 from outside the housing 2 via the current introduction terminals 9a, 9b and the wiring member 9c.
  • the wiring member 9c is a conductive member disposed within the housing 2, and constitutes part of the current path between the current introduction terminals 9a, 9b and the semiconductor laser elements 10-15.
  • the wiring member 9c extends from near the current introduction terminal 9a to near the semiconductor laser element 10.
  • the semiconductor laser elements 10-15 are connected in series using metal wires W.
  • the current introduction terminal 9a is connected to the wiring member 9c by the metal wire W, and the wiring member 9c is connected to the semiconductor laser element 10 by the metal wire W.
  • one electrode of the semiconductor laser element 10 is connected to an electrode on the submount 20 via a conductive bonding material such as Au or AuSn, and the electrode on the submount 20 and the wiring member 9c are connected by the metal wire W.
  • the other electrode of the semiconductor laser element 10 and the semiconductor laser element 11 are connected by a metal wire W.
  • one electrode of the semiconductor laser element 11 is connected to an electrode on the submount 21, and the electrode on the submount 21 and the other electrode of the semiconductor laser element 10 are connected by a metal wire W.
  • the semiconductor laser elements 11 to 15 are connected in the same manner as the semiconductor laser element 10 and the semiconductor laser element 11.
  • the semiconductor laser element 15 is connected to the current introduction terminal 9b by a metal wire W. As described above, by using the wiring member 9c that extends from near the current introduction terminal 9a to near the semiconductor laser element 10, the length of the metal wire W can be shortened and the interference between the multiple metal wires W can be suppressed.
  • the multiple FAST axis collimator lenses 30-35 collimate the multiple laser beams L0A-L5A emitted from the multiple semiconductor laser elements 10-15, respectively, in the FAST axis direction, and emit multiple laser beams L0B-L5B collimated in the FAST axis direction.
  • the front stage prism 550 is a prism that deflects the multiple laser beams L1B to L5B emitted from the multiple FAST axis collimator lenses 31 to 35, respectively, and makes them incident on the multiple prisms 41 to 45.
  • the front stage prism 550 is disposed between the semiconductor laser elements 11 to 15 and the reflecting mirrors 71 to 75, and is a deflection element that gives the propagation direction of the laser beams L1B to L5B a component in the height direction from the bottom surface 6a (i.e., deflects in the height direction).
  • the front stage prism 550 is disposed between the multiple FAST axis collimator lenses 31 to 35 and the multiple prisms 41 to 45, and deflects the laser beams L1B to L5B upward (i.e., in the positive direction in the X-axis direction) and emits the laser beams L1G to L5G.
  • the front stage prism 550 deflects the laser beams L1B to L5B at the same angle.
  • the laser light L0B does not enter the front prism 550.
  • the front prism 550 is not disposed on the optical path of the laser light L0B. Therefore, the laser light L0B propagates parallel to the bottom surface 6a from the FAST axis collimator lens 30 to the reflecting mirror 70 (and the focusing lens 90) without being given a component in the height direction.
  • the laser beams L0A to L5A and L0B to L5B propagate in the positive direction of the Z axis and parallel to the bottom surface 6a between the semiconductor laser elements 10 to 15 and the front-stage prism 550.
  • the laser beams L0A to L5A and L0B to L5B propagate parallel to each other between the semiconductor laser elements 10 to 15 and the front-stage prism 550.
  • the semiconductor laser device 501 includes a single pre-stage prism 550, but may include multiple pre-stage prisms 550.
  • the semiconductor laser device 501 may include five pre-stage prisms that provide height components to each of the laser beams L1B to L5B.
  • the multiple prisms 41-45 deflect the multiple laser beams L1G-L5G in the FAST axis direction (the FAST axis direction of the laser beam immediately after it is emitted from each semiconductor laser element) and emit the multiple laser beams L0C-L2C.
  • the multiple SLOW axis collimator lenses 60-65 collimate the multiple laser beams L0B, L1C-L5C in the SLOW axis direction, respectively, and emit the multiple collimated laser beams L0D-L5D.
  • the multiple reflecting mirrors 70-75 reflect the multiple laser beams L0D-L5D, respectively, and emit multiple laser beams L0E-L5E.
  • the distance in the Z-axis direction from each prism to each semiconductor laser element increases as the height from the bottom surface 6a of the installation position of each prism increases. This allows the distance from the front-stage prism 550 to each prism to be different depending on the height from the bottom surface 6a of the installation position of each prism.
  • the prisms 41 to 45 are installed near the ends of the element installation surfaces 81 to 85 that are closer to the semiconductor laser elements 11 to 15. In other words, the distance in the Z-axis direction from the end located between each semiconductor laser element and each prism on each element installation surface to each prism is smaller than the distance in the Z-axis direction from that end to each semiconductor laser element. This reduces the blocking of each laser light by the multi-stage base 508.
  • each element mounting surface closest to each semiconductor laser element increases as the height of each element mounting surface from the bottom surface 6a increases. Also, as the height of each element mounting surface from the bottom surface 6a increases, the length of each element mounting surface in the propagation direction (Z-axis direction) of the laser light L0D to L5D decreases. In other words, the higher the mirror mounting surface from the bottom surface 6a among the element mounting surfaces 80 to 85, the shorter the length in the propagation direction (Z-axis direction) of the laser light.
  • the height of the multistage base 508 from the bottom surface 6a of the region between the multiple element mounting surfaces 80-85 and the multiple semiconductor laser elements 10-15 is lower than the height of the bottom surface 6a of each light emitting point of the semiconductor laser elements 10-15. This reduces the blocking of each laser light by the multistage base 508.
  • the position of the end of the multistage base 508 close to each semiconductor laser element coincides with the end of the multiple element mounting surfaces 80-85. In other words, there is no component of the multistage base 508 located between each element mounting surface and the laser base 7. This reduces the blocking of each laser light by the multistage base 508, and allows the multistage base 508 to be made lighter.
  • an end face perpendicular to the bottom surface 6a is formed on the multi-stage base 8.
  • the distance in the Z-axis direction from the end face to each semiconductor laser element increases as the height from the bottom surface 6a of each element mounting surface increases. This reduces the blocking of laser light by the multi-stage base 508 between the front prism 550 and the prisms 41 to 45, as shown in FIG. 22.
  • each SLOW axis collimator lens The distance in the Z-axis direction from each SLOW axis collimator lens to each semiconductor laser element becomes smaller as the height of each SLOW axis collimator lens from the bottom surface 6a increases. This makes it possible to align the optical path length from each SLOW axis collimator lens to each semiconductor laser element.
  • the heights from the bottom surface 6a at the positions where the reflecting mirrors 70 to 75 are installed are different from each other.
  • the heights from the bottom surface 6a at the installation positions increase in the order of reflecting mirrors 70, 71, 72, 73, 74, and 75.
  • the distance in the first direction (the X-axis direction in this embodiment) from the light emitting point 11e of the semiconductor laser element 11 to the optical axis of the laser light L1D incident on the reflecting mirror 71 is different from the distance in the first direction from the light emitting point 11e of the semiconductor laser element 11 to the optical axis of the laser light L2D incident on the reflecting mirror 72.
  • the distances in the first direction (the X-axis direction in this embodiment) from the light emitting point 11e of the semiconductor laser element 11 to the optical axes of the laser light L1D to L5D incident on the reflecting mirrors 71 to 75, respectively, are different from each other.
  • Laser beams L1C to L5C and L1D to L5D propagate in the positive direction of the Z axis between the prisms 41 to 45 and the reflecting mirrors 71 to 75, respectively, parallel to the bottom surface 6a and parallel to the element mounting surfaces 81 to 85. Laser beams L1C to L5C also propagate parallel to each other.
  • the laser beams L0E to L5E propagate in the negative Y-axis direction between the reflecting mirrors 70 to 75 and the focusing lens 90, parallel to the bottom surface 6a.
  • the multiple semiconductor laser elements 10-15 can be mounted on the same plane parallel to the bottom surface 6a, making it even easier to mount the multiple semiconductor laser elements 10-15.
  • the distance between the multiple semiconductor laser elements 10-15 and the bottom surface 6a when a heat sink or the like is connected to the bottom 6 to dissipate heat, the distance from the multiple semiconductor laser elements 10-15 to the heat sink can be reduced. Therefore, the heat dissipation characteristics of the multiple semiconductor laser elements 10-15 can be improved.
  • FIG. 23 is a perspective view showing the configuration of the semiconductor laser device 601 according to this embodiment.
  • the semiconductor laser device 601 includes a housing 2, a plurality of semiconductor laser elements 10-12, a plurality of submounts 20-22, a plurality of FAST axis collimator lenses 30-32, a front stage prism 550, a plurality of prisms 41, 42, a plurality of SLOW axis collimator lenses 60-62, a plurality of reflecting mirrors 70-72, a plurality of element mounting surfaces 80-82, an optical fiber 4, and current introduction terminals 9a, 9b.
  • the semiconductor laser device 601 further includes an airtight package P06.
  • the semiconductor laser device 601 also includes a multi-stage base 508 having a plurality of element mounting surfaces 80-82.
  • the airtight package P06 is a package that hermetically seals at least one of the multiple semiconductor laser elements 10-12.
  • the airtight package P06 is a single package that hermetically seals the multiple semiconductor laser elements 10-12 and the multiple FAST axis collimator lenses 30-32.
  • the submounts 20-22 are also hermetically sealed within the airtight package P06.
  • the airtight package P06 has a light-transmitting window P17 for emitting the laser light L0A-L2A from the multiple semiconductor laser elements 10-12 to the outside of the airtight package P06.
  • the semiconductor laser device 601 includes an airtight package P06 that hermetically seals at least one of the multiple semiconductor laser elements 10 to 12.
  • multiple semiconductor laser elements 10-12 include AlGaInN-based semiconductors and emit laser light with wavelengths ranging from blue light to ultraviolet light, it is possible to suppress deterioration of each semiconductor laser element due to organic matter adhering to the light-emitting point of each semiconductor laser element as a result of photochemical reactions.
  • the semiconductor laser device 601 also includes a single airtight package P06 that hermetically seals the semiconductor laser elements 10 to 12. This allows for a simpler configuration than when the multiple semiconductor laser elements 10 to 12 are each hermetically sealed individually. Also, the airtight package P06 can be attached to the housing 2 more easily than when multiple airtight packages are used.
  • the number of semiconductor laser elements in each embodiment is not particularly limited as long as it is more than one.
  • the number of other elements, such as fast axis collimator lenses, may also be set appropriately according to the number of semiconductor laser elements.
  • each laser light in each embodiment is not limited to the direction of each laser light in each of the above embodiments.
  • each laser light emitted from each reflecting mirror does not have to be parallel to the Y-axis direction.
  • the deflection angle of each of the multiple reflecting mirrors does not have to be 90 degrees.
  • the airtight package of the semiconductor laser device 301 according to the third embodiment may also be applied to the first, second, fourth and fifth embodiments.
  • a plurality of semiconductor laser elements, a plurality of submounts and a plurality of FAST axis collimator lenses may be arranged in a single airtight package.
  • the plurality of semiconductor laser elements may be integrated (i.e., laser arrayed), the plurality of submounts may be integrated, and the plurality of FAST axis collimator lenses may be integrated.
  • rear prism of the semiconductor laser device according to the third modification of the first embodiment may be applied to the semiconductor laser devices according to the other embodiments and their modifications.
  • the semiconductor laser device is particularly useful as a high-brightness, high-power laser light source, for example, a laser light source for processing, a laser light source for displays, a laser light source for medical use, etc.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
PCT/JP2023/034934 2022-10-05 2023-09-26 半導体レーザ装置 Ceased WO2024075595A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024555742A JPWO2024075595A1 (https=) 2022-10-05 2023-09-26

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-161258 2022-10-05
JP2022161258 2022-10-05

Publications (1)

Publication Number Publication Date
WO2024075595A1 true WO2024075595A1 (ja) 2024-04-11

Family

ID=90608269

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/034934 Ceased WO2024075595A1 (ja) 2022-10-05 2023-09-26 半導体レーザ装置

Country Status (2)

Country Link
JP (1) JPWO2024075595A1 (https=)
WO (1) WO2024075595A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118943888A (zh) * 2024-10-14 2024-11-12 苏州长光华芯光电技术股份有限公司 半导体激光器合束装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10508122A (ja) * 1995-01-11 1998-08-04 ディラス ダイオーデンラーゼル ジーエムビーエイチ レーザダイオードシステム用の光学装置
JP2001516473A (ja) * 1998-01-09 2001-09-25 イェーノプティク アクチエンゲゼルシャフト 一方が他方の上に配置される１つ以上のハイパワーダイオードレーザーの光ビームのバランスをとるための光学配置構成
CN106785883A (zh) * 2016-12-20 2017-05-31 大族激光科技产业集团股份有限公司 高功率半导体激光器
US20170219743A1 (en) * 2014-07-29 2017-08-03 Dolby Laboratories Licensing Corporation Laser-machined optical components and related methods for pick and bond assembly
US20190252863A1 (en) * 2018-02-06 2019-08-15 Nlight, Inc. Diode laser apparatus with fac lens out-of-plane beam steering
JP2020194955A (ja) * 2019-05-22 2020-12-03 日亜化学工業株式会社 光源ユニット

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10508122A (ja) * 1995-01-11 1998-08-04 ディラス ダイオーデンラーゼル ジーエムビーエイチ レーザダイオードシステム用の光学装置
JP2001516473A (ja) * 1998-01-09 2001-09-25 イェーノプティク アクチエンゲゼルシャフト 一方が他方の上に配置される１つ以上のハイパワーダイオードレーザーの光ビームのバランスをとるための光学配置構成
US20170219743A1 (en) * 2014-07-29 2017-08-03 Dolby Laboratories Licensing Corporation Laser-machined optical components and related methods for pick and bond assembly
CN106785883A (zh) * 2016-12-20 2017-05-31 大族激光科技产业集团股份有限公司 高功率半导体激光器
US20190252863A1 (en) * 2018-02-06 2019-08-15 Nlight, Inc. Diode laser apparatus with fac lens out-of-plane beam steering
JP2020194955A (ja) * 2019-05-22 2020-12-03 日亜化学工業株式会社 光源ユニット

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118943888A (zh) * 2024-10-14 2024-11-12 苏州长光华芯光电技术股份有限公司 半导体激光器合束装置

Also Published As

Publication number Publication date
JPWO2024075595A1 (https=) 2024-04-11

Similar Documents

Publication Publication Date Title
KR102942894B1 (ko) 다중 kW 급 청색 레이저 시스템
US7668214B2 (en) Light source
JP7247615B2 (ja) 面発光レーザモジュール、光学装置及び面発光レーザ基板
TWI802700B (zh) 發光裝置
CN111295808B (zh) 激光模块以及激光系统
US20020093738A1 (en) Semiconductor laser module, manufacturing method thereof and optical amplifier
US20230059013A1 (en) Light source module
WO2013054547A1 (ja) 発光装置
US20250392097A1 (en) Light-emitting device
JP2024040276A (ja) 発光装置
WO2019230144A1 (ja) ミラー駆動機構および光モジュール
JP2023135554A (ja) 発光装置
WO2024075595A1 (ja) 半導体レーザ装置
JP2005537643A (ja) 半導体レーザ装置
JP2026015607A (ja) 発光装置およびバックライト
US20190368712A1 (en) Light source device for illumination apparatus
US20020105984A1 (en) Integrated laser beam synthesizing module for use in a semiconductor laser module and an optical amplifier
JP7316098B2 (ja) 半導体レーザモジュール及びレーザ加工装置
CN102096291B (zh) 发光装置以及投影仪
WO2024075594A1 (ja) 半導体レーザ装置
JP2019215441A (ja) 光モジュール
JP7440492B2 (ja) 半導体レーザ装置
KR102165519B1 (ko) 빔 적층 방법이 개선된 레이저 다이오드 모듈
US20260106431A1 (en) Light emitting device and light emitting module
US20230296825A1 (en) Light-emitting device and light-emitting module

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23874723

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2024555742

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23874723

Country of ref document: EP

Kind code of ref document: A1