WO2024074202A1 - Masque pour un substrat, support de substrat, appareil de traitement de substrat, procédé de dépôt de couche sur un substrat et procédé de fabrication d'un ou de plusieurs dispositifs - Google Patents

Masque pour un substrat, support de substrat, appareil de traitement de substrat, procédé de dépôt de couche sur un substrat et procédé de fabrication d'un ou de plusieurs dispositifs Download PDF

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Publication number
WO2024074202A1
WO2024074202A1 PCT/EP2022/077692 EP2022077692W WO2024074202A1 WO 2024074202 A1 WO2024074202 A1 WO 2024074202A1 EP 2022077692 W EP2022077692 W EP 2022077692W WO 2024074202 A1 WO2024074202 A1 WO 2024074202A1
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WO
WIPO (PCT)
Prior art keywords
substrate
frame
mask
protrusion
shield
Prior art date
Application number
PCT/EP2022/077692
Other languages
English (en)
Inventor
Avinash JAGADISH
Simon Lau
Wolfgang Klein
Markus Hanika
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2022/077692 priority Critical patent/WO2024074202A1/fr
Publication of WO2024074202A1 publication Critical patent/WO2024074202A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Definitions

  • Embodiments of the present disclosure relate to masks for substrates used during material deposition.
  • embodiments of the present disclosure relate to substrate supports with masks employed during material deposition in a vacuum environment, particularly in a vacuum deposition chamber of substrate processing apparatus.
  • a substrate may be coated by using an evaporation process, a physical vapor deposition (PVD) process, such as a sputtering process, a spraying process, etc., or a chemical vapor deposition (CVD) process.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • a substrate on which material is deposited i.e. a substrate to be coated, is introduced into a vacuum chamber of a vacuum processing system and is positioned relative to a processing area of the vacuum chamber of the vacuum processing system.
  • a coating process can take place in the vacuum chamber.
  • Coating processes i.e. material deposition processes
  • large area substrates e.g. in display manufacturing technology.
  • Coated substrates can be used further in several technical fields with applications e.g. in microelectronics, in the production of semiconductor devices, for substrates with thin film transistors, but also for insulating panels, etc.
  • the tendency towards larger substrates, e.g. in manufacturing larger displays results in larger vacuum processing systems.
  • substrates may be held on a substrate support. Further, conventionally the edges of the substrate support and the edges of the substrate are masked by a mask, particularly an edge exclusion mask, in order to avoid material deposition on the substrate support at the rear of the substrate and prevent deposition material escaping on to chamber walls of the deposition chamber in which the deposition process is carried out.
  • a mask particularly an edge exclusion mask
  • the masks of the state of the art have the disadvantage that material deposition on the masks results in a shadow effect causing a shrinkage of the mask over time. The increasing mask shrinkage over time leads to a non-uniform coating thickness on the substrate, particularly on the substrate edges. Further, the usable area of the substrate is decreased.
  • a mask for masking a rear of an edge of a substrate includes a frame having an opening for receiving the substrate.
  • the frame has a protrusion provided at an inner side of the frame. The protrusion extends towards the rear of the edge of the substrate.
  • a substrate holder includes a table body having a first level for supporting a substrate and second level for supporting a mask according to any embodiments described herein. The second level is below the first level.
  • a substrate processing apparatus includes a vacuum deposition chamber, an arrangement of deposition sources, and a substrate holder according to any embodiments described herein.
  • a method for layer deposition on a substrate includes placing the substrate on a substrate holder, masking a rear of an edge of the substrate, particularly by employing a mask according to any embodiments described herein, and depositing material on the substrate.
  • a method of manufacturing one or more devices on a substrate includes using the method for layer deposition on the substrate according to any embodiments described herein.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
  • FIG. 1 A shows a schematic perspective view of a mask according to embodiments described herein
  • FIG. IB shows a schematic sectional view along line A-A shown in Fig. 1 of a mask according to embodiments described herein ;
  • FIGS. 2 and 3 shows a detailed portion of Fig. IB for explaining further features of the mask according to embodiments described herein;
  • FIG. 4 shows a schematic perspective view of a mask according to further embodiments described herein;
  • FIGS. 5 and 6 show schematic sectional views of a mask according to yet further embodiments described herein;
  • FIG. 7 shows a schematic perspective view of a mask according to further embodiments described herein;
  • FIG. 8 shows a portion of FIG. 7 with an enlarged section for explaining further features of the mask according to embodiments described herein;
  • FIG. 9 shows sectional view of a substrate holder according to embodiments described herein.
  • FIG. 10 shows a portion of FIG. 9 for explaining further features of the substrate holder according to embodiments described herein;
  • FIG. 11 shows a sectional view of a portion of a substrate holder according to further embodiments described herein,
  • FIG. 12 shows a schematic view of a substrate processing apparatus according to embodiments described herein.
  • FIG. 13 shows a block diagram for illustrating a method for layer deposition on a substrate according to embodiments described herein.
  • FIGS. 1 A to 8 a mask 100 for masking a rear 10R of an edge 10E of a substrate 10 according to embodiments of the present disclosure is described.
  • the mask 100 includes a frame 110 having an opening 111 for receiving the substrate 10, as exemplarily shown in FIG. 1A.
  • the frame 110 has a protrusion 112 provided at an inner side 110A of the frame, as exemplarily shown in FIG. IB.
  • the protrusion 112 extends towards the rear 10R of the edge 10E of the substrate 10. As can be seen from FIG. IB, typically there is no overlap of the mask 100 and the front 10F of the substrate 10.
  • an improved mask is provided.
  • embodiments of the mask as described herein beneficially provide for avoiding the shadow effect of conventional masks.
  • embodiments of the mask according to the present disclosure beneficially provide for a reduction of maintenance and cleaning intervals resulting in a decrease of processing downtimes.
  • embodiments of the mask as described herein have a longer mask lifetime.
  • coating uniformity of the substrate, particularly at the substrate edges can be improved.
  • a uniform coating thickness can be provided on the entire front side of the substrate.
  • the risk of scratching the substrate upon removal of the mask can be eliminated.
  • beneficially no orientation matching of the substrate and mask is needed, facilitating the mounting of the mask.
  • a “mask for masking a rear of an edge of a substrate” can be understood as a mask configured to mask a rear of an edge of a substrate.
  • the term “mask” can be understood as mask configured to hinder or avoid material deposition on the masked substrate.
  • edge of a substrate can be understood as an edge region of the substrate.
  • the edge of the substrate can be understood as the outermost 10% or less of the substrate.
  • a “rear of a substrate” can be understood as the side of the substrate which is to be supported by a substrate support.
  • the term “front of a substrate” can be understood as the side of the substrate which is to be coated by material deposition.
  • front refers to the side supposed for material deposition.
  • rear refers to the opposite side with respect to the front side.
  • a “substrate” may particularly embrace substantially inflexible substrates, e.g., glass plates or metal plates.
  • substantially inflexible is understood to distinguish over “flexible”.
  • a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.5 mm or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates.
  • the substrate can have a thickness of 0.1 mm to 1.8 mm.
  • the substrate may be made of any material suitable for material deposition.
  • the substrate may be made of a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.
  • glass for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • polymer for instance polysilicate glass, metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.
  • the substrate can be a “large area substrate” and may be used for display manufacturing.
  • the substrate may be a glass or plastic substrate.
  • substrates as described herein shall embrace substrates which are typically used for an LCD (Liquid Crystal Display), a PDP (Plasma Display Panel), and the like.
  • a “large area substrate” can have a main surface with an area of 0.5 m 2 or larger, particularly of 1 m 2 or larger.
  • a large area substrate can be GEN 4.5, which corresponds to about 0.67 m 2 substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m * 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • a “frame” can be understood as a closed mechanical structure building a frame around an opening.
  • an opening for receiving a substrate can be understood as an opening of the frame which is configured for receiving a substrate as described herein.
  • a “protrusion” can be understood as a protruding part or mechanical structure of the frame.
  • the protrusion 112 extends towards the front side 11 OF of the frame 110, as exemplarily shown in FIG. IB.
  • a front surface 114 of the protrusion 112 is directed towards a plane 11 IP defined by the opening 111 of the frame 110.
  • typically the front surface 114 of the protrusion 112 is below the plane 11 IP defined by the opening 111.
  • an “inner side of the frame” can be understood as a side of the frame facing or directed towards the opening of the frame.
  • An “outer side of the frame” can be understood as a side of the frame facing or directed towards a lateral outside of the frame. Accordingly, it is to be understood that the inner side of the frame is directed in an opposite direction with respect to the outer side of the frame.
  • the term “inner” refers to the direction towards an inner side of the frame and the term “outer” refers to a direction towards a lateral outside of the frame.
  • the protrusion 112 has an undercut 113 with respect to a front surface 114 of the protrusion 112 for masking the rear of the edge of the substrate 10.
  • the front surface 114 of the protrusion 112 for masking the rear of the edge of the substrate 10 is substantially parallel to the surface of the rear 10R of the substrate 10.
  • the term “substantially parallel” may be understood as parallel within a tolerance t of t ⁇ ⁇ 15°, particularly t ⁇ ⁇ 10°, more particularly t ⁇ ⁇ 5°, for example t ⁇ ⁇ 1°.
  • the protrusion 112 has a first side surface 115 facing towards an outer side of the frame 110, as shown in FIG. 2.
  • the first side surface 115 has an undercut angle a of a ⁇ 90° with respect to the rear surface 10R of the substrate 10.
  • the undercut angle a can be selected from a range of ai ⁇ a ⁇ 012.
  • the undercut angle a can be 75° ⁇ 5°. It is to be noted that since the front surface 114 of the protrusion 112 is typically substantially parallel to the surface of the rear 10R of the substrate 10, the undercut angle aof the first side surface 115 with respect to the front surface 114 of the protrusion 112 may correspond to the undercut angle a of the first side surface 115 with respect to the surface of the rear 10R of the substrate 10.
  • the protrusion 112 has a second side surface 116 facing towards an inner side 110A of the frame 110.
  • the second side surface 116 is substantially perpendicular to the surface of the rear 10R of the substrate 10.
  • the second side surface 116 can be substantially perpendicular to the front surface 114 of the protrusion 112.
  • the term “substantially perpendicular” may be understood as perpendicular within a tolerance t of t ⁇ ⁇ 15°, particularly t ⁇ ⁇ 10°, more particularly t ⁇ ⁇ 5°, for example t ⁇ ⁇ 1°.
  • the frame 110 has an inclined section 117 provided between the protrusion 112 and an outer side HOB of the frame 110.
  • the inclined section 117 faces towards the front side 11 OF of the frame 110.
  • the inclined section 117 may have an inclination angle P of P > 90° with respect to a surface of the front 10F of the substrate 10.
  • the inclination angle P of the inclined section 117 with respect to the surface of the front 10F of the substrate 10 may correspond to the inclination angle P of the inclined section 117 with respect to the front surface 114 of the protrusion 112.
  • the inclination angle P can be selected from a range of P i ⁇ P ⁇ P 2.
  • the undercut angle a of the first side surface 115 with respect to the front surface 114 of the protrusion 112 may correspond to the undercut angle a of the first side surface 115 with respect to the surface of the rear 1 OR of the substrate 10.
  • the frame 110 may have one or more intermediate sections 118 provided between the inclined section 117 and the protrusion 112, particularly the first side surface 115 of the protrusion 112.
  • the one or more intermediate sections 118 have a different surface orientation than the inclined section 117.
  • the intermediate sections 118 may have different surface orientations with respect to each other, as exemplarily shown in FIG. 5. It is to be understood that typically the inclined section 117 and the first side surface 115 of the protrusion, optionally together with the one or more intermediate sections 118, provide for a cavity 119 in the front side 11 OF of the frame 110.
  • the cavity 119 is located at an inner edge region of the frame 110.
  • the frame 110 includes four or more frame elements 120 building the frame, as exemplarily shown in FIG. 4.
  • the frame 110 may include a first frame element 120A, a second frame element 120B, a third frame element 120C and a fourth frame element 120D.
  • the first frame element 120 A and the second frame element 120B may provide two opposing sides of the frame 110.
  • the third frame element 120C and the fourth frame element 120D may provide two other opposing sides of the frame 110.
  • the frame can have rectangular or square shape.
  • the first frame element 120A is identical with the second frame element 120B.
  • the third frame element 120C can be identical with the fourth frame element 120D.
  • the frame may be comprised of only two different types of frame elements.
  • At least one of the four or more frame elements 120 is a single piece element.
  • the first frame element 120A and/or the second frame element 120B and/or the third frame element 120C and/or the fourth frame element 120D can be a single piece element, particularly an integral single piece element.
  • all of the four or more frame elements 120 are single piece elements, particularly integral single piece elements.
  • the frame 110 includes one or more cooling lines 131.
  • the one or more cooling lines 131 are provided inside the frame.
  • the one or more cooling lines 131 can be configured for providing coolant to cool the frame 110.
  • the one or more cooling lines 131 are integrated in the frame 110.
  • the one or more cooling lines 131 can be provided in a separate cooling frame 130, as exemplarily shown in FIG. 6.
  • the frame 110 includes one or more receptions 135 for receiving one or more fixation elements 215 for fixing and/or positioning the frame 110 with respect to a main body 210 of a substrate holder 200 as exemplarily described with reference to FIGS 10 and 11.
  • the one or more receptions 135 are provided on a rear side 11 OR of the frame 110.
  • the frame 110 includes a separate front shield frame 140 providing the front surface of the frame 110.
  • the front shield frame 140 can include a top shield 141 and a bottom shield 142.
  • the top shield 141 includes the inclined section 117 as described herein.
  • the top shield 141 can be in contact with the cooling frame 130. In other words, the top shield 141 may rest on the cooling frame 130. It is to be understood, that, during processing, the top shield 141 absorbs the heat load.
  • the bottom shield 142 typically includes the protrusion 112 as described herein.
  • the bottom shield 142 may include one or more receptions 135 for receiving one or more fixation elements 215 for fixing and/or positioning the frame 110 with respect to a main body 210 of a substrate holder 200 as exemplarily described with reference to FIGS 10 and 11.
  • a frame with a separate front shield frame for example having a top shield and a bottom shield as describe herein, and a separate cooling frame has the advantage that for cleaning of the frame the top shield can be removed separately while the cooling frame may remain.
  • a labyrinth path 143 is provided in an overlapping region 144 between the top shield 141 and the bottom shield 142, as exemplarily shown in FIG. 6.
  • the labyrinth path 143 can be beneficial for preventing escape of deposition material to chamber walls of the deposition chamber in which the deposition process is carried out.
  • the front shield frame 140 is built by a plurality of front shield frame elements 145.
  • FIG. 8 shows a portion of FIG. 7 with an enlarged section for explaining further features of the mask according to embodiments described herein.
  • the front shield frame elements 145 can be configured and arranged such that neighboring front shield frame elements 145 have an overlap 147, as exemplarily shown in FIG. 8.
  • the end portions of the front shield frame elements 145 are configured for providing an interlock at the overlap 147.
  • a gap 146 between neighboring front shield frame elements 145 can be provided. The gap between neighboring front shield frame elements can be beneficial for allowing thermal expansion of the front shield frame elements without inducing mechanical stress in the frame.
  • the substrate holder 200 includes a main body 210 having a first level 211 for supporting a substrate 10 and second level 212 for supporting a mask 100 according to any embodiments described herein.
  • the second level 212 is below the first level 211.
  • the first level 211 can be a substrate support level and the second level 212 can be a mask support level.
  • the first level 211 is elevated with respect to the second level 212.
  • the first level 211 can be provided by a simple plate, an electrostatic chuck, or a gecko chuck to hold the substrate.
  • the mask 100 is releasably fixable to the main body 210 via one or more fixation elements 215 connecting the mask 100 with the main body 210.
  • the fixation elements 215 can be configured for fixing and/or positioning the mask 100, particularly the frame 110, with respect to the main body 210.
  • the one or more fixation elements 215 can be clamping elements and/or positioning elements, e.g. positioning pins.
  • the one or more fixation elements 215 engage with one or more receptions 135 as described herein.
  • the fixation elements and the receptions are configured to allow for thermal expansion without inducing mechanical stress at elevated temperatures in the frame when the fixation elements engage with the receptions.
  • the bottom shield 142 is fixed and/or positioned via one or more fixation elements 215 with respect to the main body 210 of the substrate holder 200.
  • the main body 210 may have a third level 213 for supporting the cooling frame 130.
  • the third level 213 is provided between the first level 211 and the second level 212.
  • the cooling frame 130 may be supported separately from the main body 210. For example, for substrate exchange, the top shield 141 and the cooling frame 130 can remain stationary, whereas the main body 210 and the bottom shield 142 may be lowered.
  • the substrate support holder is configured to be operated inside a vacuum chamber, particularly a vacuum chamber of a substrate processing apparatus as.
  • the vacuum can be a constant vacuum, or the vacuum can be cycled, i.e. vary between a vacuum state and a pressurized state.
  • the substrate holder can be a support table, e.g. a substrate support table, or a pedestal, e.g. a substrate support pedestal provided in a processing chamber of a vacuum processing system.
  • the support table may particularly be configured for horizontal substrate processing or essentially horizontal substrate processing.
  • the processing chamber including the substrate support may be provided in a cluster system.
  • the substrate When loading the substrate onto the substrate support, the substrate may be provided onto an electrostatic chuck until electrostatic forces are established.
  • Some embodiments of the present disclosure provide a substrate support with an electrostatic chuck.
  • the substrate processing apparatus 300 includes a vacuum deposition chamber 310, an arrangement of deposition sources 320, and a substrate holder 200 with a mask 100 according to any embodiments described herein.
  • the arrangement of deposition sources 320 and the substrate holder 200 with the mask 100 are arranged within the vacuum deposition chamber 310.
  • vacuum can be understood in the sense of a technical vacuum having a vacuum pressure of less than, for example, 10 mbar.
  • the pressure in a vacuum chamber as described herein may be between 10' 5 mbar and about 10' 8 mbar, more typically between 10' 5 mbar and 10" 7 mbar, and even more typically between about 1 O' 6 mbar and about 10" 7 mbar.
  • an “arrangement of deposition sources” can be understood as an arrangement of a plurality of deposition sources.
  • the individual deposition sources of the arrangement of deposition sources may be of identical or different configuration.
  • a “deposition source” can be understood as a source configured for material deposition, particularly by employing a sputter deposition process, particularly a magnetron sputtering process.
  • the deposition source is a vertical deposition source, i.e. having a longitudinal main axis extending in a substantially vertical direction.
  • the deposition material of the deposition sources can be chosen according to the deposition process and the later application of the coated substrate.
  • the deposition material can be a material selected from the group consisting of Metals, such as aluminum, molybdenum, titanium, copper, or the like, silicon, indium tin oxide, other transparent conductive oxides, and semi-conductive materials.
  • Oxide-, nitride- or carbide-layers, which can include such materials, can be deposited by providing the material from the material deposition source or by reactive deposition, i.e. the material from the material deposition source can react with elements like oxygen, nitride, or carbon from a processing gas.
  • the substrate processing apparatus may be adapted for processing and coating semiconductor wafers.
  • Embodiments described herein can relate to components of a deposition system in which substrates, which can be substrates as described above, are loaded and unloaded in a horizontal configuration and in which the substrates are processed, e.g. coated, in a vertical configuration.
  • a deposition system according to some embodiments described herein are suitable for use in a deposition apparatus in which a substrate is supported in different configurations, particularly in a processing apparatus including a tilt drive for moving the substrate between a horizontal and a vertical configuration.
  • the substrate processing apparatus as described herein can be provided in a cluster system, in which one or more substrate processing apparatuses are coupled to a central transfer chamber, particularly a central vacuum transfer chamber.
  • FIG. 13 a block diagram illustrating a method 400 for layer deposition on a substrate according to embodiments of the present disclosure is shown.
  • the substrate may particularly be a large area substrate as described herein and/or a substrate for display manufacturing.
  • the method includes in box 410 placing the substrate on a substrate holder, particularly a substrate holder 200 as described herein. Additionally, the method includes in box 420 masking a rear of an edge of the substrate, particularly by employing a mask 100 according to any embodiments described herein. Further, the method includes in box 430 depositing material on the substrate, particularly by using a substrate processing apparatus 300 as described herein.
  • a method of manufacturing one or more devices on a substrate comprising using the method for layer deposition as described herein, can be provided.
  • the one or more devices can be optoelectronical devices, e.g. displays.
  • an improved mask, an improved substrate holder, an improved substrate processing apparatus, an improved method for layer deposition on a substrate, and an improved method of manufacturing one or more devices on a substrate are provided.
  • embodiments as described herein beneficially provide for avoiding the shadow effect of conventional masks.
  • embodiments according to the present disclosure beneficially provide for a reduction of maintenance and cleaning intervals resulting in a decrease of processing downtimes. Further, embodiments as described herein provide for improved coating uniformity.

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  • Physical Vapour Deposition (AREA)

Abstract

Un masque (100) pour masquer l'arrière d'un bord d'un substrat (10) est décrit. Le masque comprend un cadre (110) ayant une ouverture (111) pour recevoir le substrat, le cadre ayant une saillie (112) disposée sur un côté interne (110A) du cadre, la saillie (112) s'étendant vers l'arrière (10R) du bord (10E) du substrat (10).
PCT/EP2022/077692 2022-10-05 2022-10-05 Masque pour un substrat, support de substrat, appareil de traitement de substrat, procédé de dépôt de couche sur un substrat et procédé de fabrication d'un ou de plusieurs dispositifs WO2024074202A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2022/077692 WO2024074202A1 (fr) 2022-10-05 2022-10-05 Masque pour un substrat, support de substrat, appareil de traitement de substrat, procédé de dépôt de couche sur un substrat et procédé de fabrication d'un ou de plusieurs dispositifs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2022/077692 WO2024074202A1 (fr) 2022-10-05 2022-10-05 Masque pour un substrat, support de substrat, appareil de traitement de substrat, procédé de dépôt de couche sur un substrat et procédé de fabrication d'un ou de plusieurs dispositifs

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WO2024074202A1 true WO2024074202A1 (fr) 2024-04-11

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6315878B1 (en) * 1998-05-21 2001-11-13 Applied Materials, Inc. Substrate support and lift apparatus and method
US20060219172A1 (en) * 2005-04-05 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. PVD equipment and electrode and deposition ring thereof
US20090050272A1 (en) * 2007-08-24 2009-02-26 Applied Materials, Inc. Deposition ring and cover ring to extend process components life and performance for process chambers
JP2016148062A (ja) * 2015-02-10 2016-08-18 セイコーエプソン株式会社 成膜装置
US20170002461A1 (en) * 2015-07-03 2017-01-05 Applied Materials, Inc. Process kit having tall deposition ring and deposition ring clamp

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6315878B1 (en) * 1998-05-21 2001-11-13 Applied Materials, Inc. Substrate support and lift apparatus and method
US20060219172A1 (en) * 2005-04-05 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. PVD equipment and electrode and deposition ring thereof
US20090050272A1 (en) * 2007-08-24 2009-02-26 Applied Materials, Inc. Deposition ring and cover ring to extend process components life and performance for process chambers
JP2016148062A (ja) * 2015-02-10 2016-08-18 セイコーエプソン株式会社 成膜装置
US20170002461A1 (en) * 2015-07-03 2017-01-05 Applied Materials, Inc. Process kit having tall deposition ring and deposition ring clamp

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