WO2024068547A1 - Compensation de perturbation pour dispositifs à faisceau de particules chargées - Google Patents

Compensation de perturbation pour dispositifs à faisceau de particules chargées Download PDF

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Publication number
WO2024068547A1
WO2024068547A1 PCT/EP2023/076396 EP2023076396W WO2024068547A1 WO 2024068547 A1 WO2024068547 A1 WO 2024068547A1 EP 2023076396 W EP2023076396 W EP 2023076396W WO 2024068547 A1 WO2024068547 A1 WO 2024068547A1
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WO
WIPO (PCT)
Prior art keywords
charged particle
particle beam
offset
repair device
control unit
Prior art date
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PCT/EP2023/076396
Other languages
English (en)
Inventor
Bernd Schindler
Lucas Harmsen
Maik Haeberlen
Daniel Schwarz
Steffen Balling
Maximilian Gnedel
Daniel Alexander Emmrich
Samuel Klamandt
Original Assignee
Carl Zeiss Multisem Gmbh
Carl Zeiss Microscopy Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Carl Zeiss Multisem Gmbh, Carl Zeiss Microscopy Gmbh filed Critical Carl Zeiss Multisem Gmbh
Publication of WO2024068547A1 publication Critical patent/WO2024068547A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Definitions

  • Various examples of the disclosure generally relate to a charged particle beam device and to an operating method for a charged particle beam device. Various examples specifically pertain to compensation of disturbances during operation of the charged particle beam device.
  • Charged particle beam devices can be used for microscopy or manipulation, e.g., of semiconductor structures.
  • Charged particles that can be used in a charged particle beam device include: electrons, positrons, muons, and ions.
  • Examples of charged particle beam devices include: Scanning Electron Microscope (SEM); Focused Ion Beam (FIB) device; SEM including multiple beams, sometimes also referred to as multi-SEM.
  • JP 2004-079334 discloses electron-beam devices such as electron microscopes and electron-beam lithography devices that are equipped with semiconductor electron-beam detectors that detect electron beams. Multiple electron-beam sensors are arranged on opposing sides of a mounting substrate, thereby allowing for easy replacement of a semiconductor electron-beam detector upon replacing the semiconductor electron-beam detector. Images of an object can be recorded using particle microscopes. In this way, for example the structure of the surface can be analyzed (inspection mode). Also, it is possible to modify a specimen, e.g., by removing material or by depositing material (manipulation mode). For instance, charged particle beam devices can be used to modify/manipulate lithography masks. Then, charged particle beam devices are sometimes referred to as repair devices. Examples with respect to such repair devices are disclosed in US20200912914, the disclosure of which is incorporated herein by reference.
  • US 2018/0277361 A1 discloses a method of material deposition onto a sample including directing a charged particle beam towards a substrate to induce a deposition from the precursor gas of a protective layer above a region of interest.
  • the protective layer can be a composite mix of material having a spot array that substantially matches a spot array of the substrate.
  • disturbances cause irregularities in the operation of a charged particle beam device.
  • External disturbances e.g., from varying temperature, pressure, vibrations, etc. often affect a beam positioning of the particle beam of the charged particle beam device with respect to the sample stage.
  • a closed-loop control to compensate for the beam offset is not always possible, because measuring a beam offset of the charged particle beam is not possible or only be possible to a limited degree during operation in the inspection or manipulation mode. Forward-compensation of individual disturbances is known in the prior art. This is explained below.
  • JP 2003173755 discloses a charged particle beam device that includes an active magnetic field source that is configured to cancel disturbances caused by an external magnetic field.
  • JP 2003173755. discloses a charged particle beam device that includes an active magnetic field source that is configured to cancel disturbances caused by an external magnetic field.
  • US 3842272 discloses a scanning charged particle microprobe system.
  • a beam scans the specimen in a predetermined pattern.
  • Spurious external electric and magnetic fields can be compensated by applying beam correction signals to the beam scanning means. Again, using such techniques as disclosed in US 3842272, only insufficient compensation of placement offsets caused by this spurious external electric and magnetic fields is achieved.
  • US 6,043,490 discloses a charged particle beam apparatus including means for individually detecting x- and y-components of mechanical vibration and means for correcting x- and y-scanning signals so as to remove and influence of the mechanical vibration.
  • Employing the techniques of US 6043590 only yields limited abilities to compensate a placement offset of a beam of the charged particle beam device due to disturbances.
  • US 9,601 ,310 discloses a charged particle microscope that includes a barometric pressure sensor. A control procedure is used to compensate for a relative position error between the charged particle beam and the specimen holder based on a sensor signal from the barometric sensor. Only limited accuracy in the compensation of the placement offset due to disturbances is achieved using the technologies disclosed by US 9601310.
  • US 4, 6 98, 503 discloses a refocusing apparatus used in a transmission electron microscope operable to deal with an electron-beam sensor output signal at discrete irradiation angles.
  • a charged particle beam device includes a beam source, a beam deflection unit, and a sample stage.
  • the charged particle beam device implements a charged particle beam repair device, in which case the charged particle beam repair device further includes a precursor gas source.
  • the precursor gas source includes a gas supply, a supply valve, and a supply nozzle located in the vicinity of the sample stage.
  • the charged particle beam repair device can include multiple precursor gas sources, to thereby supply different types of precursor gases.
  • the beam deflection unit is configured to deflect a beam of charged particles - e.g., electrons or ions - to position the beam on the sample stage.
  • the charged particle beam repair device includes multiple sensors. These multiple sensors are configured to measure multiple disturbances of multiple physical quantities that each affect a beam offset of the beam on the sample stage.
  • the charged particle beam repair device also includes at least one control unit, e.g., a microprocessor or a processor that is configured to execute program code that is loaded from a memory.
  • a control unit e.g., a microprocessor or a processor that is configured to execute program code that is loaded from a memory.
  • Embedded electronics may be used.
  • FPGA Field Program Gated Array
  • the at least one control unit has various tasks of beam control and process control.
  • the at least one control unit can also process the sensor output provided by the multiple sensors, to thereby determine one or more compensation signals to counteract the beam offset.
  • the at least one control unit in some examples, e.g., when a manipulation mode is performed to accomplish a repair task of a sample, is also configured to provide, to the beam source, the beam deflection unit, and the precursor gas source, control signals to implement an electron beam-induced manipulation of the sample that is mounted to the sample stage.
  • the at least one control unit is configured to provide, e.g., during this electron-beam- induced manipulation or when operating in an imaging mode, the one or more compensation signals to at least one of the beam source, the beam deflection unit, the sample stage or one or more compensator modules of the charged particle beam repair device or arranged in its surrounding.
  • Such techniques enable reduction or full compensation of disturbances during operation of the charged particle beam device, e.g., while operating in an imaging mode or a manipulation mode. For instance, a semiconductor mask can be subjected to one or more repair tasks in the manipulation mode. By reducing or compensating the disturbances while executing the manipulation, damage to the mask can be avoided.
  • a method of manipulating a sample that is mounted to a sample stage of a charged particle beam repair devices includes a beam source, a beam deflection unit, a precursor gas source, and the sample stage.
  • the beam deflection unit is configured to deflect a beam of charged particles that originate from the beam source, to thereby position the beam on the sample states.
  • the method includes obtaining a sensor output of multiple sensors of the charged particle beam repair device.
  • the multiple sensors measure multiple disturbances of multiple physical quantities that each affect a beam offset of the beam on a sample stage.
  • the method also includes determining, based on the sensor output of the multiple sensors, one or more compensation signals to counteract the beam offset.
  • the method also includes providing, to the beam source, the beam deflection unit, and the precursor gas source control signals that implement an electron-beam-induced manipulation of the sample.
  • the method further includes providing, during the electron-beam-induced manipulation, the one or more compensation signal to at least one of the beam source, the beam deflection unit, the sample states, or the one or more compensator modules.
  • a computer program or a computer-program product or a computer-readable storage medium includes program code.
  • the program code can be loaded and executed by at least one processor.
  • the at least one processor upon loading and executing the program code, is configured to perform such method of manipulating the sample.
  • a charged particle beam device includes a beam source, a beam deflection unit, and a sample stage.
  • the beam deflection unit is configured to deflect a beam that originates from the beam source, to thereby position the beam on the sample stage.
  • the charged particle beam device includes multiple sensors configured to measure multiple disturbances of multiple physical quantities that each affect a beam offset of the beam on the sample stage.
  • the at least one control unit is configured to determine, based on a sensor output of the multiple sensors, meta data that is indicative of one or more compensation operations to counteract the beam offset in imaging data that is acquired by the charged particle beam repair device operating in an imaging mode.
  • the meta data can be stored in association with the image data.
  • a method of post-processing image data that is acquired by a charged particle beam devices includes a beam source, a beam deflection unit, and a sample stage.
  • the beam deflection unit is configured to deflect a beam that originates from the beam source to position the beam on the sample stage.
  • the method includes obtaining a sensor output for multiple sensors of the charged particle beam device.
  • the multiple sensors measure multiple disturbances of multiple physical quantities that each affect a beam offset of the beam on the sample stage.
  • the method also includes determining meta data based on the sensor output of the multiple sensors.
  • the meta data is indicative of one or more compensation operations to counteract the beam offset in image data.
  • the image data is acquired by the charged particle beam device when operating in an imaging mode.
  • the method also includes post-processing the image data based on the meta data and in accordance with the one or more compensation operations.
  • a computer program or a computer-program product or a computer-readable storage medium includes program code.
  • the program code can be loaded and executed by at least one processor.
  • the at least one processor upon loading and executing the program code, is configured to perform such method of post processing image data.
  • Such techniques enable reduction or full compensation of disturbances in the postprocessing of imaging data that is acquired by the charged particle beam device, e.g., while operating in the imaging mode.
  • FIG. 1 schematically illustrates a placement offset of a charged particle beam according to various examples.
  • FIG. 2 schematically illustrates compensation of the placement offset of FIG. 1 according to various examples.
  • FIG. 3 schematically illustrates compensation of the placement offset of FIG. 1 according to various examples.
  • FIG. 4 schematically illustrates a focal offset of a charged particle beam and respective compensation according to various examples.
  • FIG. 5 schematically illustrates a focal offset and respective compensation according to various examples.
  • FIG. 6 schematically illustrates a charged particle beam device according to various examples.
  • FIG. 7 is a flowchart of a method according to various examples.
  • FIG. 8 is a flowchart of a method according to various examples.
  • FIG. 9 schematically illustrates a time series data of a sensor output and a characteristic fingerprint of a disturbance of a respective physical quantity according to various examples.
  • FIG. 10 is a flowchart of a method according to various examples.
  • FIG. 11 schematically illustrates an implementation of a charged particle beam device by a repair device according to various examples.
  • FIG. 12 schematically illustrates sensor placement with respect to the repair device of FIG. 11 according to various examples.
  • FIG. 13 schematically illustrates sensor placement in a repair device according to
  • FIG. 11 according to various examples.
  • FIG. 1 schematically illustrates a defect of a lithography mask according to various examples.
  • FIG. 15 schematically illustrates a repaired defect of the lithography masks according to various examples.
  • FIG. 16 schematically illustrates a charged particle beam device according to various examples.
  • circuits and other electrical devices generally provide for a plurality of circuits or other electrical devices. All references to the circuits and other electrical devices and the functionality provided by each are not intended to be limited to encompassing only what is illustrated and described herein. While particular labels may be assigned to the various circuits or other electrical devices disclosed, such labels are not intended to limit the scope of operation for the circuits and the other electrical devices. Such circuits and other electrical devices may be combined with each other and/or separated in any manner based on the particular type of electrical implementation that is desired.
  • any circuit or other electrical device disclosed herein may include any number of microcontrollers, a graphics processor unit (GPU), integrated circuits, memory devices (e.g., FLASH, random access memory (RAM), read only memory (ROM), electrically programmable read only memory (EPROM), electrically erasable programmable read only memory (EEPROM), or other suitable variants thereof), and software which co-act with one another to perform operation(s) disclosed herein.
  • any one or more of the electrical devices may be configured to execute a program code that is embodied in a non-transitory computer readable medium programmed to perform any number of the functions as disclosed.
  • Examples of charged particle beam devices include: SEMs; Aberration Corrected SEMs (which typically have a comparatively larger detector aperture so that the depth range of the focus is small); FIB devices; multi-SEMs; cross-beam devices including a SEM and a FIB optics; and SEM or FIB with a precursor gas source, for repair/circuit edit tasks in a manipulation mode (also referred to as repair device; as will be explained in further detail in connection with FIG. 11 below).
  • SEMs Aberration Corrected SEMs (which typically have a comparatively larger detector aperture so that the depth range of the focus is small)
  • FIB devices multi-SEMs
  • cross-beam devices including a SEM and a FIB optics
  • SEM or FIB with a precursor gas source for repair/circuit edit tasks in a manipulation mode
  • Repair tasks pertain to modifying structures on semiconductor masks that are used for lithography. Repair tasks are implemented using an electron beam-induced manipulation of a samples based on interaction of a precursor gas or gases with electron beams. Alternatively or additionally, ions can be used for repair or edit tasks. In some examples, repair tasks are employed for modifying semiconductor devices, e.g., electric circuits on wafers. In detail, charged particles - e.g., electrons or ions such as helium or neon - are used to modify such structures. For instance, the charged particle beam interacts with a precursor gas or precursor gases that are selectively supplied towards the sample stage. Then, one or more components of the precursor gas or gases is deposited onto the structure.
  • charged particles - e.g., electrons or ions such as helium or neon - are used to modify such structures. For instance, the charged particle beam interacts with a precursor gas or precursor gases that are selectively supplied towards the sample stage. Then, one or more components of the precursor gas or gases is deposited onto the structure
  • a repair task is generally associated with a manipulation mode of a charged particle beam device where the sample / specimen is manipulated.
  • a repair task includes execution of control of a beam source, beam deflection unit and a precursor gas source using respective control signals to thereby implement an electron beam - induced manipulation of the sample. Examples of the manipulation are: electronbeam induced deposition (EBID) and electron-beam induced etching (EBIE).
  • EBID electronbeam induced deposition
  • EBIE electron-beam induced etching
  • Various techniques disclosed herein are based on the finding that with ongoing reduction of typical dimensions of the investigated or modified structures (typically, structures are characterized by a critical dimension that marks the minimum structure size that needs to be handled) the requirements on accuracy for the operation of charged particle beam devices is increased.
  • typical critical dimensions can be at less than 7 nanometers or even less than 5 nanometers.
  • FIG. 1 schematically a charged particle beam 91 - e.g., an electron or ion beam, e.g., of Helium ions - of a charged particle beam device.
  • the charged particle beam 91 is focused, by an optics of a beam deflection unit 112, onto a certain position 85 on a sample stage 113 of the charged particle beam device.
  • a beam offset here specifically a placement offset 81 , occurs, that displaces the charged particle beam 91 towards another position 86 on the sample stage 113. This is a displacement along x-direction.
  • a displacement along y-direction would be possible.
  • an accuracy of charged particle beam devices depends on, both, a resolution of the charged particle beam, as well as a placement of the charged particle beam on the sample stage. Typical resolutions are defined by a beam diameter that is typically in the range of 3 to 5 nanometers or even below (below 1 nm for aberration corrected instruments).
  • the placement of the charged particle beam on the sample stage is typically affected by multiple disturbances of multiple physical quantities that affect the beam offset including the placement offset as described in connection with FIG. 1 above.
  • a further type of beam offset is the focal offset, that will be explained in connection with FIG. 4 and FIG. 5 later on.
  • Such placement offset reducing the accuracy of the beam placement is particularly critical for the operation of the charged particle beam device, because the specification requirements imposed on the accuracy of the placement of the charged particle beam on the sample stage are often even higher than the specification requirements imposed on the beam diameter/resolution.
  • One reason for this is that, e.g., in connection with a manipulation mode, certain structures are required to be generated or edited as an accuracy of less than 3 nanometers, optionally less than 2 nanometers or even less than 1 nanometer.
  • a placement offset while operating in the inspection mode may reduce the overall image quality of the acquired image, a placement offset due to disturbances during manipulation can lead to damage of expensive semiconductor structures or even lithography masks.
  • a charged particle beam device includes multiple sensors for measuring multiple disturbances of multiple physical quantities. These multiple physical quantities all affect a beam offset of the beam on the sample stage.
  • the charged particle beam device also includes a control unit that is configured to determine, based on a sensor output of the multiple sensors, one or more compensation signals to counteract the beam offset.
  • the control unit is configured to provide the one or more compensation signals to at least one of a beam source of the charged particle beam device, a beam deflection unit of the charged particle beam device, the sample stage or one or more compensator modules.
  • the beam offset can include at least one of a placement offset (in FIG. 1 along the X direction or the Y direction, i. e. , along the plane of the sample stage 113) or a focal offset (in FIG. 1 along the Z direction; perpendicular to the plane of the sample stage 113) of the beam.
  • a placement offset in FIG. 1 along the X direction or the Y direction, i. e. , along the plane of the sample stage 113
  • a focal offset in FIG. 1 along the Z direction; perpendicular to the plane of the sample stage 113
  • a comprehensive compensation of the beam offset is achieved. Specifically, more accurate compensation is achieved if compared to scenarios as known from the prior art according to which only individual physical quantities such as temperature, pressure, vibrations, or acoustic vibrations (i.e. , sound waves) are considered in isolation. Cross-correlations between different pairs of physical quantities can be considered, to thereby more accurately perform the compensation of the beam offset. For instance, nonlinear effects due to cross correlations could be considered.
  • various physical quantities for compensation are considered.
  • the multiple physical quantities are selected from the group including: acoustic vibration; vibration; pressure; humidity; laminar air flow; turbulent air flow; a differential quantity; temperature; a change rate (i.e., defining a change rate over time); a differential quantity; a vector quantity (e.g., electric field, magnetic field); or a scalar quantity (e.g., temperature, pressure).
  • a differential quantity describes a spatial gradient of a respective quantity, e.g., a temperature gradient or a pressure gradient. Oftentimes such differential quantities can exert stress or strain onto material, thereby causing a disturbance. Further examples include laminar or turbulent air flow.
  • Acoustic vibrations include, in some examples, external acoustic vibrations, e.g., stemming from objects moved about in the surrounding of the charged particle beam device.
  • Passive damping systems are known in the prior art that attempt to decouple the charged particle beam device from its surrounding. However, such passive damping cannot usually absorb all acoustic vibrations so that active compensation, as described herein, can be desirable.
  • Acoustic vibrations can have residual components of movable parts within the charged particle beam device. Such internal components can be excited by external acoustic vibrations via mechanical contacts, e.g., via the floor or support lines; or via sound.
  • Pressure varies as a function of time in some examples. Pressure variation can occur on a comparatively long time scale if compared to, e.g., acoustical vibrations.
  • Pressure stabilization systems Passive compensation is known by pressure stabilization systems; however, such passive compensation has certain limitations in the accuracy. Pressure variation can occur for cooling liquid or ambient air. Ambient air pressure variation varies forces exerted on a vacuum housing of the charged particle beam device, leading to changes in the hardware arrangement.
  • Temperature variations are, to some extent, compensated, according to some examples, by passive temperature control, e.g., using stabilizing temperature reservoirs or external air conditioning system.
  • active control according to the techniques disclosed herein can more accurately compensate disturbances of even small temperature variations.
  • temperature variation of a cooling liquid is measured, according to various examples, using an appropriately placed temperature sensor. The temperature of a cooling liquid is measured in further examples.
  • Temperature variation of electronic control devices or measurement devices is measured and compensated for in yet further examples.
  • a temperature differential/gradient between two or more parts of the charged particle beam device is measured according to examples. For instance, temperature gradient between different measurement points in a fluid flow, e.g., a cooling liquid, is measured and the respective disturbance is compensated.
  • an electric field or a magnetic field exerts a force on electrons or charged ions to deflect these particles.
  • Disturbances can also have an indirect impact on to the charged particle beam by impacting one or more parts of the charged particle beam device. For instance, acoustic vibrations cause a positional offset of optics of a beam deflection unit of the charged particle beam device and this positional offset then causes the beam offset of the beam.
  • Electric or magnetic fields change analog supply currents or voltages of the beam source or optics of the beam deflection unit of the charged particle beam device; this then, in turn, affects the placement offset.
  • These are indirect disturbances. According to the techniques disclosed herein, it is possible to compensate for direct disturbances as well as indirect disturbances.
  • placement offsets as illustrated in FIG. 1 can occur in an imaging mode of a scanning electron microscope.
  • movement of magnetic materials such as iron, cobalt, nickel, steel, etc. can change the magnetic field at the site of the charged particle beam. This can be caused by movement in the surrounding of the charged particle beam device, e.g., due to elevators, cranes, doors, lifting trucks, moving persons, cell phones, keys, etc.
  • any beam offsets of the electron or ion beam with respect to the lithography mask and sample stage, respectively, are reduced so that a higher accuracy in the manipulation task is achieved.
  • various options are available for counteracting the beam offset according to the disclosed examples. According to examples, different options of counteracting the beam offset are employed for different root causes of the disturbances. For example, different options for counteracting the beam offset are employed for direct and indirect disturbances, as explained above, respectively.
  • a compensation signal is applied to optics of the beam deflection unit, to steer the beam into an opposing direction if compared to the placement offset.
  • a compensation signal is applied to a focusing optics of the beam deflection unit to change the focal length, to counteract a focal offset caused by a respective disturbance.
  • the sample stage is - alternatively or additionally - controlled to reposition to counteract a beam offset.
  • dedicated compensation is used for, e.g., external coils for applying magnetic fields or electric field plates for applying electric fields. For instance, compensation of DC magnetic fields or slowly varying magnetic fields is achieved using Helmholtz coil pairs, one coil pair for each spatial direction. Such coil pairs are positioned outside of the housing of the charged particle beam device.
  • Active cooling or heating is used according to further example.
  • a heating or cooling element is provided in thermal contact with a cooling liquid and active temperature control is possible.
  • active damping for suppressing vibrations is controlled.
  • pressure is actively controlled.
  • devices or units that indirectly counteract the beam offset - i.e. , that do not directly exert a force onto the charged particle beam by applying a magnetic or electric field or that do not shift the sample stage with respect to the charged particle beam - are referred to as compensator modules. Such compensator modules are controlled by respective compensation signals.
  • FIG. 2 illustrates aspects with respect to counteracting the placement offset 81 of FIG. 1 .
  • an additional beam shift 82 that counteracts the placement offset 81 is achieved by providing a control signal to the beam deflection unit 112. For example, an additional voltage is applied to a respective electronic lens.
  • FIG. 3 schematically illustrates counteracting the placement offset 81 of FIG. 1 .
  • a compensation signal is applied to a control motor of the sample stage 113, so as to effect a stage shift 83 that counteracts the placement offset 81 .
  • Such techniques as illustrated in FIG. 3 may be particularly helpful for closed-loop controlled motorized stages 113.
  • interferometric stages are known for which a positioning accuracy in the nanometer regime is obtained.
  • disturbances can affect a focal offset of the charged particle beam. This is illustrated in FIG. 4.
  • FIG. 4 the unaffected beam 91 in absence of any disturbances is illustrated. Furthermore, two disturbed beams 93, 94 subject to a respective focal offset 71 , 72 are illustrated. It is possible to counteract the focal offset 71 , 72 by applying an additional defocus to the beam. The beam deflection unit 112 can be controlled accordingly. The defocus 75 to counteract the focal offset 71 is illustrated, as well as the defocus 76 to counteract the focal offset 72 is illustrated. In an alternative scenario, as illustrated in FIG. 5, it is also possible to apply respective vertical stage shifts 77, 78.
  • the compensation of a focal offset is applied to aberration-corrected SEMs.
  • aberration-corrected SEMs have a comparatively large numerical aperture, therefore having a shallow focal depth range.
  • Such aberration-corrected SEMs can be employed for manipulation tasks and it is possible that the thickness of structures to be manipulated is in the same range or even smaller than the focal depth range. In such scenarios, compensation of the focal offset is particularly important to achieve good results of the manipulation task.
  • some disturbances can be varying on a fast time scale, e.g., within seconds or even in the sub-second regime. Examples pertain to physical quantities such as acoustic or seismic vibrations, e g., due to oscillation of the building foundation. To also compensate for such fast disturbances, techniques will be disclosed hereinafter that enable to determine a predictive component of the beam offset. Alternatively or additionally, information regarding such disturbances is stored in further examples, such information being determined based on the sensor output, e.g., along with imaging data acquired in an imaging mode.
  • meta data is determined that is indicative of one or more compensation operations to counteract the beam offset in image data that is acquired by the charged particle beam device that operates in the imaging mode and then the meta data is stored in association with the image data. Then, acquired image data is digitally post-processed to compensate, after acquisition, for such disturbances based on the meta data.
  • disturbances are detected that lead to suspending operation of the charged particle beam device.
  • the charged particle beam can be blanked.
  • the imaging mode or manipulation mode is interrupted, until the disturbance has resolved. Such a scenario is, in particular, helpful during manipulation mode; to avoid damage to the manipulated specimen.
  • FIG. 6 schematically illustrates a charged particle beam device 100 according to various examples.
  • the charged particle beam device 100 could be a charged particle beam repair device.
  • the charged particle beam device 100 includes a vacuum chamber 110.
  • a beam source 111 , a beam deflection unit 112 and a sample stage 113 are arranged inside the vacuum chamber 110.
  • An embedded control unit 119 controls the beam source 111 , the beam deflection unit 112, and the sample stage 113.
  • the control unit 119 can also control further parts of the charged particle beam device 100, e.g., a control valve of a precursor gas source (not shown in FIG. 6).
  • FIG. 6 While in the scenario FIG. 6 two sensors 121 , 122 are illustrated, as a general rule, only a single sensor is used or more than two sensors are used.
  • At least one of multiple sensors is arranged inside the vacuum chamber 110. Alternatively or additionally, at least one sensor is arranged outside of the vacuum chamber 110.
  • sensors measuring the same physical quantity e.g., temperature
  • a differential physical quantity is measured, e.g., a temperature or pressure differential.
  • a sensor By arranging sensors outside of the vacuum chamber, it is possible to measure physical quantities that slowly vary as a function of position, e.g., external electric fields or external magnetic fields. At the same time, an impact on the particle beam by operating the sensor can be avoided. In some examples, a sensor is nonetheless placed closer to the beam path of the beam 90, e.g., for physical quantities that show a strong positional dependency.
  • control unit 130 is also illustrated.
  • the control unit 130 is implemented by a computer.
  • the control unit 130 communicates with the embedded control unit 119, as well as the sensors 121 , 122. While in FIG. 6 a scenario is illustrated according to which the control unit 130 communicates directly with the sensors 121 , 122, such communication in other examples is via the embedded control unit 119.
  • control unit 130 obtains sensor signals 161 , 162 (i.e., sensor output) from the sensors 121 , 122. Based on this, the control unit 130 provides one or more compensation signals 165 to one or more parts of the charged particle beam device 100, to counteract the placement offset.
  • the control unit 130 includes a processor 132 that is coupled to a memory 133.
  • the processor 132 also communicates via the communication interface 131.
  • the processor loads program code from the memory 133 and executes the program code.
  • the processor 132 Upon executing the program code, the processor 132 performs techniques as disclosed herein with respect to compensating multiple disturbances of multiple physical quantities that each affect a beam offset.
  • the control unit 130 also includes a human machine interface (HMI) 134, e.g., a display, a web interface, a mouse, a keyboard, etc.
  • HMI human machine interface
  • User input is received via the HMI 134 or information is output via the HMI 134.
  • an indication of a sitespecific disturbance event is obtained from the user via the HMI 134.
  • a warning is output to the user via the HMI 134.
  • FIG. 7 is a flowchart of a method according to various examples.
  • FIG. 7 illustrates multiple phases of operation of a charged particle beam device such as the charged particle beam device 100 of FIG. 6.
  • the method of FIG. 7 may be executed by the control unit 130 and/or the embedded control unit 119.
  • Box 6005 corresponds to a calibration phase.
  • one or more transfer functions are set up between sensor outputs of multiple sensors measuring disturbances of multiple physical quantities and compensation signals.
  • Box 6010 then corresponds to an operation phase.
  • the charged particle beam device operates in an imaging mode or a manipulation mode.
  • a control unit of the charged particle beam device can provide, to a beam source and a beam deflection unit of the charged particle beam device, control signals to implement imaging of a sample mounted to a sample stage of the charged particle beam device.
  • the control unit of the charged particle beam device provides, to the beam source, the beam deflection unit, and a precursor gas source (e.g., including a gas reservoir or tank and a respective nozzle located close to the sample stage; details will be explained in connection with FIG. 11A) control signals to implement an electronbeam-induced manipulation of the sample mounted to the sample stage.
  • the precursor gas supply through the precursor gas source interacts with the electrons of the electron-beam. Material can be deposited or locally etched.
  • the control unit employs the transfer function obtained from box 6005 to determine, based on a sensor output of the multiple sensors, the one or more compensation signals to contact any beam offset and then provide the one or more compensation signals to one or more parts of the charged particle beam device.
  • meta data that is acquired based on the sensor output of multiple sensors is used to apply one or more compensation operations to counteract a beam offset by postprocessing respective image data.
  • compensation operations include applying an imaging shift, e.g., displacing pixels of image is included in the image data by a certain image offset.
  • rotation operations or skew operations are used in further examples.
  • complex image artifacts are compensated. Examples of image artifacts include artificially reoccurring contrast. To compensate this, the compensation operations can be implemented using, e.g., a neural network that obtains configuration information in the form of the meta data.
  • FIG. 8 is a flowchart of a method according to various examples.
  • FIG. 8 illustrates details with respect to the calibration phase of box 6005.
  • one or more disturbances are applied; this is done by modifying one or more physical quantities.
  • Some examples are: apply a certain disturbing electrical or magnetic field (e.g., using a Helmholtz coil setup surrounding the charged particle beam device), vary the surrounding temperature (e.g., in a temperature-stabilized environment), vary the surrounding pressure, etc. where the one or more disturbances are actively applied, the respective magnitude of the disturbance is known.
  • such active application of a certain disturbance is optional.
  • naturally-occurring disturbances are measured, e.g., sitespecific to disturbances.
  • a disturbance event is actively triggered at box 6105; while in other scenarios, environmental disturbance events are monitored and characterized at box 6110.
  • This beam offset can either result from a respective tailored disturbance that is actively applied at box 6105; the beam offset can alternatively result from a natively occurring disturbance, e.g., from environmental disturbance events.
  • a placement offset and/or a focal offset of the beam is measured. This can be achieved using, e.g., a test pattern sample and using a respective inspection task. For instance, an image of the test pattern acquired by the charged particle device operating in the imaging mode while the disturbance is present is compared with a ground truth knowledge regarding the test pattern. From deviations between the image appearance of the test pattern and the ground truth regarding the test pattern, a conclusion on the beam offset is drawn.
  • image shifts could be determined between a true position of certain features of the test pattern and a position at which those features are depicted in the image. For instance, an image blur could be quantified to determine the focal offset. Then, at box 6120, a transfer function between the disturbance and the beam offset is determined. This transfer function is then stored for later use during the compensation mode (cf. FIG. 7: box 6010).
  • the one or more compensation signals are determined using a lookup table that links the sensor output with one or more compensation signals.
  • a lookup table that links the sensor output with one or more compensation signals.
  • the look-up table can be device-specific, i.e. , different charged particle beam devices can have different look-up tables. Site-specific disturbances can be used to populate such device-specific look-up tables.
  • the look-up table could also be stored in the cloud, and thus be retrieved via the Internet. This allows to centrally maintain and manage disturbance compensation for multiple charged particle beam devices.
  • TAB. 1 An example look-up table is provided by TAB. 1 below:
  • TAB. 1 example lookup table that links a temperature disturbance within offset voltage to be applied at beam optics of a beam deflection unit of the charged particle device.
  • Such lookup table has the advantage that it is not required to model dependencies between the sensor output and the compensation signal using predetermined functions. Nonlinear dependencies are directly captured. On the other hand, such lookup table can have a significant size. This can lead to latency in the lookup of the appropriate compensation signal, which can be a problem, in particular, for quickly varying disturbances.
  • the one or more compensation signals are determined using a (pre-parameterized) functional dependency.
  • Such functional dependency is illustrated for a linear case.
  • such linear functional dependency may be defined as follows: here AT denotes the temperature disturbance (e.g., defined with respect to a reference temperature) and is obtained from the sensor output, P x denotes the x component of the compensation of the placement offset, P y denotes the y component of the compensation of the placement offset, and P z denotes the compensation of the focal offset.
  • the linear functional dependencies are then given by the parameters T x ,Ty,T z . These are determined during the calibration (pre-parameterization).
  • the placement offset defines the one or more compensation signals.
  • an example would be a cross-dependency between temperature and pressure, as explained below: where the 2x3 matrix X c has non-zero off-diagonal elements defining the crossdependencies between pressure disturbance and temperature disturbance.
  • linear functional dependencies have been disclosed, but it would be likewise possible to include non-linear terms, e.g., quadratic terms, cubic terms, etc.
  • the one or more compensation signals are determined using a model.
  • the compensation of the positioning and focal offset is determined using a trained neural network or another machine learning algorithm or generally a pre-trained algorithm.
  • the trained neural network receives, as input, a vector including the sensor output of the multiple sensors, e.g., temperature, pressure, multiple components of the electrical field, multiple components of the magnetic field, etc. Then, the neural network outputs the one or more compensation signals or the beam offset from which the one or more compensation signals are determined.
  • Such neural network is trained using ground truth labels acquired during the calibration mode, i.e. , the measured beam offset of box 6115 in combination with input vectors as determined at box 6105 or at box 6110.
  • an analytical model may be employed.
  • a change in pressure has been shown to lead to a twist of the beam optics column. This results in a displacement of the focal point on a circle tilted with respect to the surface of the sample stage, i.e., the displacement has x and y and z components.
  • a focal offset either in +z-direction or in -z-direction can occur.
  • An analytical model is determined according to example, the analytical model determining torque exerted on the optics column based on the pressure gradient.
  • Such analytical model has the benefit of reduced lead time in the parameterization, e.g., if compared to a lengthy calibration of a transfer function.
  • Such model can be extended, in some examples, to also cover placement offsets based to other disturbances such as magnetic field.
  • a predictive component of the beam offset is determined based on the sensor output of the multiple sensors and determine the one or more compensation signals based on the predictive component of the beam offset.
  • the disturbances are anticipated for a certain look-ahead time duration.
  • stray magnetic fields can be caused by movement of an office chair between two desks in the laboratory or deployment site of the charged particle beam device.
  • vibrations can be caused by a train entering or leaving a train station nearby or a delivery truck arriving at or leaving from a loading dock.
  • stray magnetic fields can be caused by operation of equipment in a wafer fab, e.g., opening or closing of a load lock, depressurization of a vacuum chamber, or temperature changes as a function of daytime I sun height, etc.
  • the sensor output of at least one of the multiple sensors includes respective time series data.
  • sensor readings over a certain observation duration e.g., along with respective timestamps
  • the predictive component is determined based on an analysis of the time series data.
  • fingerprints of one or more predetermined disturbance events are found in the time series data. These fingerprints include characteristic time dependencies of the sensor output of the respective at least one sensor. The fingerprints pertain to characteristic time-domain patterns. This is illustrated in connection with FIG. 9.
  • FIG. 9 illustrates - as an illustrative example - a disturbance of the x-component of the electrical field that affects the beam offset of the charged particle beam, over the course of time.
  • the time series data 310 of the x-component of the electrical field is obtained from a respective electrical field sensor.
  • a disturbance event 311 that is caused, as one example, by arrival of a bus at the bus station nearby the deployment site of the charged particle beam device.
  • a respective disturbance duration 313 is also illustrated.
  • the disturbance duration 313 could be in the range of seconds or minutes.
  • the disturbance event 311 has a characteristic fingerprint 312 (here: large upswing then small downswing) that is detected in the time series data of the electric field sensor. Once this fingerprint 312 has been found, a prediction on the future behavior of the disturbance can be made, i. e. , a predictive component of the beam offset can be determined (under the assumption of a repetitive nature of the disturbance). The behavior of the disturbance during the remaining disturbance duration 313 can be predicted.
  • a characteristic fingerprint 312 here: large upswing then small downswing
  • a repository is populated, according to some examples, with fingerprints of multiple disturbance events.
  • fingerprints For instance, various options are conceivable.
  • repetitions of the fingerprints are identified. For instance, during the calibration mode, the sensor output of the respective at least one sensor is monitored over an extended duration, e.g., hours or days or even weeks and then find repetitions of the fingerprints.
  • user input data is obtained that is indicative of a respective one of the one or more disturbance events. For instance, referring to FIG. 9, a user labels/annotates the time series data to identify the disturbance duration 313.
  • the user may do so with domain knowledge, e.g., in the discussed example the user may be aware of the arrival of the bus at the bus station.
  • Another option includes training a predictive model based on the timeseries data that is measured during the calibration mode to find the fingerprints. Then, the predictive model, e.g., a recurrent neural network such as a long-short-term memory (LSTM) neural network, is enabled to determine the predictive component of the beam offset.
  • LSTM long-short-term memory
  • FIG. 10 is a flowchart of an example method.
  • FIG. 10 schematically illustrates operation in the operation phase of box 6010 of FIG. 7.
  • multiple sensors of the charged particle beam device measure multiple disturbances of multiple physical quantities that each effect a beam offset, e.g., a placement offset and/or a focal offset, of the charged particle beam on a sample stage.
  • a respective sensor output including multiple sensor signals provided by the multiple sensors is provided.
  • the sensor output is indicative of the values of the physical quantities. I.e., the sensor output is associated with the disturbances.
  • the disturbances can super-imposed or can correlate with each other.
  • one or more compensation signals are determined to counteract such beam offset. This is based on the sensor output of the multiple sensors. More specifically, the disturbances are estimated from the sensor output and the disturbances are translated into the one or more compensation signals.
  • examples have been disclosed that facilitate determining such compensation signals, e.g., using a transfer function that may be implemented a by a lookup table, a model - e.g., a data-driven model using machine learning or an analytical model a functional dependency, a machine-learning algorithm, etc..
  • meta data that is indicative of one or more compensation operations is determined, to counteract the beam offset in imaging data.
  • This enables post-processing of the imaging data (cf. FIG. 7: box 6015).
  • compensation of the beam offset is achieved when digitally postprocessing imaging data that is acquired using the charged particle beam device; alternatively or additionally to compensation of at least a part of the beam offset during the operation.
  • a trust level of respective image data can be determined.
  • a log file can be generated to store the disturbances or specifically the one or more compensation signals.
  • At box 6211 is optionally possible to predict, based on the sensor output and/or the one or more compensation signals determined at box 6210, an accuracy of an operation of the charged particle beam device during a prediction time duration.
  • This can equate to predicting the level of disturbances.
  • a recurrent neural network or an LSTM is used for making such prediction.
  • such prediction can be based on characteristic fingerprints of repetitive disturbance events, as discussed in connection with FIG. 9. Different to what has been explained in connection with FIG. 9, such prediction of the level of accuracy may not directly impact the compensation signals.
  • the prediction may not be accurate enough to determine a predictive component of one or more compensation signals. In such a scenario, it is still possible to predict the accuracy.
  • such accuracy is output via an HMI to the user. The user may then decide whether to abort or not a port the operation.
  • the prediction of the accuracy is used in the context of box 6215.
  • a scenario occurs according to which the disturbance exceeds or is predicted to exceed (cf. box 6211 ) a certain predetermined threshold. If a disturbance exceeds a predetermined threshold, it is assumed that such disturbance cannot be compensated.
  • the sensor output of the multiple sensors it is checked whether one or more pre-determined events are detected in the sensor output of the multiple sensors.
  • such one or more predetermined events are associated with at least one of the of multiple disturbances exceeding a certain predetermined threshold; this corresponds to the sensor output crossing a respective threshold.
  • An alternative example of such one or more predetermined events is detection of an anomaly in the sensor output.
  • an anomaly detector algorithm is used: Examples include cluster-based anomaly detection or autoencoder neural networks. Such anomaly detector algorithms can be trained in an unsupervised manner.
  • box 6205 is re-executed, i.e. , the disturbance is measured again and compensation signals are further applied.
  • the beam is blanked at box 6220.
  • a warning message is output via an HMI.
  • the respective sensor outputs that led to execution of box 6220 are logged in some examples.
  • a safe mode is entered that may be manually exited by a user, according to some examples.
  • Beam blanking can be executed at comparatively low latency, to avoid damage. For instance, typically determining one or more compensation signals will require significant time, e.g., to perform a look-up operation or calculate the compensation signal. Accordingly, beam blanking is, in some examples, executed at a lower latency than such determining of one or more compensation signals.
  • the decision making at box 6215 is based on other sensor signals than the sensor signals that are considered by the logic of box 6210 according to some examples. For instance, it has been found that the following physical quantities are particularly suited for detecting an excess disturbance at box 6215: acoustic vibration; vibration; environmental pressure; environmental pressure change. On the other hand, the following physical quantities have been found to be particularly suited for determining one or more compensation signals to counteract the beam offset: magnetic field; environmental temperature; environmental pressure; environmental pressure change.
  • FIG. 11 schematically illustrates an example implementation of a charged particle beam device such as the charged particle beam device 100 discussed above.
  • the scenario of FIG. 11 pertains to a charged particle beam repair device (or simply repair device).
  • FIG. 11 shows a schematic sectional view through some important components of one example of a repair device 11120 which can be used to identify and repair a defect 11160 of a photolithographic mask.
  • a sample 11405 can be arranged in the form of a photolithographic mask 11110, for example, on the sample stage 11402 (corresponding to the sample stage 113).
  • the photomask can have one or a plurality of defects 11160 in the form of excess material ("dark defects") and/or missing material (“clear defects"). The defect of the photolithographic mask is not reproduced in FIG. 11 .
  • the repair device 11120 comprises a a scanning electron microscope (SEM, Scanning Electron Microscope) 11410.
  • the repair device 11120 comprises one or a plurality of scanning probe microscopes 11480 typically in the form of an atomic force microscope (AFM, Atomic Force Microscope) 11480.
  • AFM Atomic Force Microscope
  • an electron gun implementing a beam source 11412 generates an electron beam 11415, which the imaging elements (implementing a beam deflection unit) arranged in the electron column 11417, said imaging elements not being illustrated in FIG. 11 , direct/deflect as a focused electron beam 11415 onto the sample 11405 at the location 11422, which sample-as already explained-can comprise a photolithography mask.
  • the sample 11405 is arranged on a sample stage 11402.
  • a sample stage 11402 is also known as a "stage" in the art. As symbolized by the arrows in FIG.
  • a positioning unit 11407 can move the sample stage 11402 about six axes relative to the column 11417 of the SEM 11410.
  • the movement of the sample stage 11402 by the positioning unit 11407 can be effected with the aid of micromanipulators, for example, which are not shown in FIG. 11 .
  • the particle beam 11415 impinges on the sample 11405.
  • the positioning unit 11407 by virtue of the displacement of the sample stage 11402 perpendicularly to the beam axis of the electron beam 11415, makes it possible firstly to analyze defects of the photomask by generating an image of the defect (inspection task).
  • the imaging elements of the column 11417 of the SEM 11410 can scan the electron beam 11415 over the sample 11405.
  • the tilting and/or rotation of the sixth-axis sample stage 11402 the latter makes it possible to examine one or a plurality of defects from different angles or perspectives.
  • the respective position of the various axes of the sample stage 11402 can be measured by interferometry (not reproduced in FIG. 11 ).
  • the positioning unit 11407 is controlled by signals of a control unit 11425.
  • the control unit 11425 can be part of a computer system 11430 of the repair device 11120.
  • the control unit 11425 implements, in some examples, the control unit 119 or the control unit 130 (cf. FIG. 6).
  • the repair device 11120 can furthermore comprise one or more sensors that make it possible to characterize both a current state of the SEM 410 and the process environment in which the SEM 11410 is used (for instance a vacuum environment). For instance, vibration, temperature, pressure, respective differentials or change rates (over time) could be measured.
  • the electron beam 11415 can furthermore be used for inducing a particle beam- induced processing process for correcting identified defects for example in the context of an electron beam-induced etching process EBIE (Electron Beam Induced Etching) for removing dark defects and/or an electron beam-induced deposition process EBID (Electron Beam Induced Deposition) for correcting clear defects.
  • EBIE Electro Beam Induced Etching
  • EBID Electro Beam Induced Deposition
  • the electron beam 11415 can be used for analyzing a repaired location of a photomask.
  • the electrons backscattered from the electron beam 11415 by the sample 11405 and the secondary electrons produced by the electron beam 11415 in the sample 11405 are registered by the detector 11420. If the sample 11405 comprises the photomask, the detector 11420 identifies secondary electrons emitted during the scanning of absorbent strips arranged on the photomask for lithography purposes.
  • the detector 11420 that is arranged in the electron column 11417 is referred to as an "in lens detector.”
  • the detector 11420 can be installed in the column 11417 in various embodiments.
  • the detector 11420 can also be used for detecting the electrons backscattered from one or a plurality of defects 11160 of the mask 11110.
  • the detector 11420 is controlled by a control unit 11425 of a computer system 11430 of the device 120.
  • the computer system 11430 can implement the control unit 130.
  • the embedded control unit 119 is implemented by the control unit 11425.
  • the repair device 11120 can include a second detector 11445.
  • the second detector 11445 is designed to detect electromagnetic radiation, particularly in the x-ray range. As a result, the second detector 11445 makes it possible to analyze the material composition of the sample, e.g., the photolithography mask, i.e., the substrate thereof, the absorbent strips, and/or one or a plurality of defects.
  • the detector 11445 is likewise controlled by the control unit 11425.
  • the control unit 11425 of the computer system 430 (it could also be separate from the computer system 430) can set the parameters of the electron beam 11415 for inducing a deposition process for removing clear defects and/or an EBIE process for etching dark defects.
  • the computer system 11430 has an evaluation unit 11435.
  • the evaluation unit 11435 receives the measurement data of the detector(s) 11420, 11445.
  • the evaluation unit 11435 can generate from the measurement data, for example from secondary electron contrast data, images in a greyscale representation or a greyscale value representation, which are represented on a monitor 11432.
  • the computer system 11430 comprises an interface 11437, via which the computer system 11430 can transmit to further processing devices.
  • the computer system 11430 of the repair device 11120 can receive one or a plurality of processed or evaluated images and/or one or a plurality of superimposed images from the evaluation device.
  • the electron beam 11415 of the modified SEM 11410 can be used for inducing an electron beam-induced processing process/manipulation.
  • defects of the sample 11405 can be corrected by means of an electron beam-induced manipulation.
  • the exemplary scanning electron microscope 11410 of the repair device 11120 in FIG. 11 has three different supply containers 11450, 11460 and 11470.
  • the first supply container 11450 stores a first precursor gas in the form of a deposition gas, for example a metal carbonyl, for instance chromium hexacarbonyl (Cr(CO)e), or a carbon-containing precursor gas, such as pyrene, for instance.
  • a deposition gas for example a metal carbonyl, for instance chromium hexacarbonyl (Cr(CO)e), or a carbon-containing precursor gas, such as pyrene, for instance.
  • the second supply container 11460 stores a precursor gas in the form of an etching gas, which makes it possible to perform a local electron beam induced etching (EBIE) process. Defects of excess material or dark defects can be removed from the photolithographic mask 11110 (or another sample, e g., a semiconductor wafer) with the aid of an electron beam- induced etching process.
  • EBIE electron beam induced etching
  • a precursor gas in the form of an etching gas can comprise for example xenon difluoride (XeF2), chlorine (Ch), oxygen (O2), ozone (O3), water vapour (H2O), hydrogen peroxide (H2O2), dinitrogen monoxide (N2O), nitrogen monoxide (NO), nitrogen dioxide (NO2), nitric acid (HNO3), ammonia (NH3) or sulfur hexafluoride (SF6) or a combination thereof. Consequently, the modified SEM 11410 in combination with the second supply container 11460 or the precursor gas stored therein forms a repair device 11120.
  • An additive gas can be stored in the third supply container 11470, said additive gas, where necessary, being able to be added to the etching gas kept available in the second supply container 11460 or to the deposition gas stored in the first supply container 11450.
  • the third supply container 11470 can store a precursor gas in the form of a second deposition gas or a second etching gas.
  • each of the supply containers 11450, 11460 and 11470 has its own control valve 11452, 11462 and 11472 in order to monitor or control the amount of the corresponding gas that is provided per unit time, i.e., the gas volumetric flow at the location 11422 of the incidence of the electron beam 11415 on the sample 11405.
  • the control valves 11452, 11462 and 11472 are controlled and monitored by the control unit 11425. By this means, it is possible to set the partial pressure conditions of the gas or gases provided at the processing location 11422 for carrying out an EBID and/or EBIE process in a wide range, during operation (cf. FIG. 7: box 6010).
  • each supply container 11450, 11460 and 11470 has its own gas feedline system 11454, 11464 and 11474, which ends with a nozzle 11456, 11466 and 11476 in the vicinity of the point of incidence, i.e., the processing locationl 1422 of the electron beam 11415 on the sample 11405.
  • the supply containers 11450, 11460 and 11470 can have their own temperature setting element and/or control element, which allows both cooling and heating of the corresponding supply containers 11450, 11460 and 11470. This makes it possible to store and in particular provide the precursor gases of the deposition gas and/or the etching gas at the respectively optimum temperature (not shown in FIG. 11 ).
  • the control unit 11425 can control the temperature setting elements and the temperature control elements of the supply containers 11450, 11460 and 11470.
  • the temperature setting elements of the supply containers 11450, 11460 and 11470 can furthermore be used to set the vapour pressure of the process gas(es) stored therein by way of the selection of an appropriate temperature.
  • the device 11400 can comprise more than one supply container 11450 in order to store precursor gases of two or more deposition gases. Furthermore, the device 400 can comprise more than one supply container 11460 for storing precursor gases of two or more etching gases.
  • the scanning electron microscope 11410 illustrated in FIG. 11 can be operated under ambient conditions or in a vacuum chamber 11442.
  • Implementing the EBID and EBIE processes necessitates a negative pressure in the vacuum chamber 11442 relative to the ambient pressure.
  • the SEM 11410 in FIG. 11 comprises a pump system 11444 for generating and for maintaining a negative pressure required in the vacuum chamber 11442. With closed control valves 11452, 11462 and 11472, a residual gas pressure of ⁇ 1 O' 4 Pa is achieved in the vacuum chamber 11442.
  • the pump system 11444 can comprise separate pump systems (not shown in FIG.
  • a pressure sensor may be provided to monitor the pressure inside and outside of the vacuum chamber 11 42. A pressure differential may be monitored.
  • the SEM 11410 presented in the repair device 11120 in FIG. 11 has a single electron beam 11415.
  • the SEM 11410 can have a source of a second particle beam.
  • the second particle beam can comprise a photon beam and/or an ion beam (not shown in FIG. 11 ).
  • the SEM 11410 can have two or more electron beams 11415 in order to be able to carry out in parallel two or more particle beam-induced processing processes or two or more analysis processes of two or more defects.
  • the exemplary repair device 11120 illustrated in FIG. 11 comprises a scanning probe microscope 11480 which, in the repair device 11120, is embodied in the form of a scanning force microscope (SFM) 11480 or an atomic force microscope (AFM) 11480.
  • the scanning probe microscope 11480 can be used for scanning one or a plurality of defects 11160 of the sample 11405 or of the photomask 11110.
  • the scanning probe microscope 11480 can be used for repairing the defects of excess material.
  • the scanning probe microscope 11480 can comprise a first measuring tip for analyzing the sample 11405 and a second measuring tip for processing one or a plurality of defects.
  • the measuring head 11485 of the scanning probe microscope 11480 is illustrated in the repair device 11120 in FIG. 11 .
  • the measuring head 11485 comprises a holding device 11487.
  • the measuring head 11485 is secured to the frame of the repair device 11120 by means of the holding device 11487 (not shown in FIG. 11 ).
  • a piezo-actuator 11490 which enables a movement of the free end of the piezo-actuator in three spatial directions (not illustrated in FIG. 11 ) is attached to the holding device 11487 of the measuring head 11485.
  • a probe 11492 comprising a cantilever 11494 or lever arm 11494 and a measuring tip 11495 is secured to the free end of the piezo-actuator 11490.
  • the free end of the cantilever 11494 of the probe 11492 has the measuring tip 11495.
  • FIG. 12 and FIG. 13 options for positioning sensors 800 that can be used to measure disturbances of physical quantities that each affect a beam offset of the beam 11415 of the repair device 11120 will be disclosed.
  • the repair device 11120 is only schematically illustrated, at a higher level of abstraction if compared to FIG. 11 in FIG. 12 and FIG. 13.
  • FIG. 12 and FIG. 13, beyond what is disclosed in FIG. 11 also discloses a beam blanker 11801 that can be used to blank the beam 11415, as well as an aperture 11802 and electric coils 11803 and 11804 for deflecting the beam (i.e., forming optics of the beam deflection unit 112).
  • the sensors 800 are arranged outside of the vacuum chamber 11442 of the repair device 11120. In the scenario FIG. 13, the sensors 800 are arranged inside the vacuum chamber 11442 of the repair device 11120.
  • FIGs. 14 and 15 illustrates a mask repair operation at the high precision achievable with the repair device 11120 of the preceding FIGs.
  • a mask defect 1471.1 in an absorber line 1453 on a substrate layer 1451 of the mask is determined with high precision.
  • a precise determination of the extension of the defect 1471.1 is determined, including at least a slope angle 1473.1 of the defect 1471.1.
  • the position, a deviation to a target range 1475 of the edge position and the extensions of the defect can be determined with an accuracy below 1nm, preferably even below 0.5nm.
  • the missing volume of material to be deposited in a repair operation can be determined with high accuracy.
  • the defect 1471 .1 is filled with for example chromium, forming the repaired defect 1477. This is illustrated in FIG. 15.
  • the performance of the repair operation is then verified by the apparatus in inspection mode. A resulting edge position of the line 1453 and a slope angle 1473.2 of the line edge can be obtained with high accuracy. Thereby it is maintained that a repair operation is performed very well within the specification requirement for masks, including the strong requirements for EUV masks with edge positions below 0.5nm or even less.
  • the steps of repair and verification can also be performed iteratively.
  • Such manipulation is not limited to missing material in a mask layer but can also be applied in analogy to the removal of excess material in mask layer. Further, the manipulation is not limited to mask repair, but also to circuit edit operations at processed wafers. In both examples, layer material is removed by electron beam induced etching or deposited by electron beam induced deposition, and an end-pointing of the processing with high precision is required.
  • FIG. 16 schematically illustrates an example implementation of a charged particle beam device such as the charged particle beam device 100 discussed above.
  • the charged particle device 161001 in FIG. 16 is a low-energy corrected electron microscope with reduced aberrations, as described in German patent application, DE 10 2019 214 936, filed on September 27, 2019, which is hereby incorporated by reference.
  • a low-energy corrected electron microscope is comprising correction means chromatic aberration (CC), spherical aberration (CS), and optionally also field curvature (FC).
  • a low-energy corrected single beam charged particle microscope 161001 comprises a beamlet generator 161301 for generating a single primary charged particle beamlet 161003, an object irradiation unit 161100 for illuminating an image subfield on a surface of a sample 11110 (e.g., a lithography mask or a semiconductor wafer including semiconductor structures) arranged in an object plane 16101 , thereby generating during use a secondary electron beamlet 161009 emitting from a focus point 161605 of the primary beamlet 161003 within the image subfield.
  • the subfield has typically a lateral extension of at least 5pm, preferably 8pm, 12pm or more.
  • the object irradiation unit 161100 further comprises first to third electrostatic or magnetic lenses 161 03, 161405 and 161407 and an objective lens 161102.
  • the charged particle microscope 161001 further comprises a detection unit 161200 for acquisition during use a digital image of the image subfield of the surface of the sample.
  • the detection unit 161200 comprises an electron sensor 161207 and optional electrostatic or electromagnetic deflection elements 161205.
  • the charged particle microscope 161001 further comprises an electromagnetic beam splitting system 161400 for guiding the primary beamlet 161003 along the primary beam-path (solid line 161013) and guiding the secondary beamlet 161009 along the secondary beam-path (dashed line, 161011 ).
  • the secondary beamlet 161009 collected by objective lens 161102, is propagating opposite to the primary beamlet 161003 und therefore separated from the primary beamlet 161003 by the magnetic beam splitting system 161400.
  • the charged particle microscope 161001 further comprises a long stroke raster scanner 161110.
  • the raster scanner 161110 (forming a beam deflection unit) comprises at least a first set of deflection electrodes 161111.
  • the charged particle microscope 161001 further comprises a control unit 16800 (implementing the control unit 119 or the control unit 130).
  • the charged particle microscope 161001 further comprises at least a first corrector 161601 for correction the primary charged particle beamlet 161003.
  • the charged particle system 161001 further comprises a correction system 161052 with a second optical axis 161050 at an angle to the optical axis 16105.
  • the beam splitter system 161400 guides the primary beamlet in direction of the second optical axis 161050 into a correction system 161052.
  • the correction system comprises an electrostatic mirror 161414, which reflects the primary beamlet back to the beam splitter system 161400.
  • a second corrector 161602 is arranged in the correction system 161052, with correction electrodes 161612.
  • a low-energy corrected single beam charged particle microscope 161001 electron imaging with kinetic energies below 400eV, preferable below 300eV, even more preferably below 200eV, or even more preferably below 150eV, is enabled and a high resolution below 2nm, preferable below 1.5nm, even more preferably below 1 nm is achieved by utilizing primary electrons of low landing energy and the correction means of the low-energy electron microscope.
  • the charged particle beams are again arranged in a vacuum chamber (not shown in FIG. 16).
  • the sensors can be arranged inside and/or outside of the vacuum chamber, as previously discussed in connection with FIGs. 14 and 15.
  • the sensor output can be stored in a data repository and multiple time series can be correlated with each other. Correlations can be found and repetitive fingerprints can be identified. This can be used to make predictions for the future behavior of the charged particle beam device.
  • Predictive maintenance information can be obtained, e.g., by acquiring the acoustic frequency spectrum and/or acoustic noise pressure using microphones the, e.g., continuous increasing noise level at certain frequencies in the sound spectrum can be detected, which can be indicative of failure of one or more parts of the charged particle beam device such as the pump.
  • the sensor output in various examples, is analyzed using machine learning algorithms such as deep neural networks. Training can be reiterated from time to time, based on training data that is acquired during a calibration mode. Thus, the accuracy can be continuously increased. Furthermore, site-specific training based on site-specific calibration becomes possible.
  • a charged particle beam device comprising a beam source, a beam deflection unit, and a sample stage, the beam deflection unit being configured to deflect a beam of charged particles originating from the beam source to position the beam on the sample stage, the charged particle beam device including:
  • one or more sensors configured to measure one or more disturbances of one or more physical quantities that each affect a beam offset of the beam on the sample stage
  • At least one control unit configured to determine, based on a sensor output of the one or more sensors, one or more compensation signals to counteract the beam offset, wherein the at least one control unit is configured to provide the one or more compensation signals to at least one of the beam source, the beam deflection unit, the sample stage, or one or more compensator modules.
  • Clause 2 The charged particle beam device of clause 1 , wherein the at least one control unit is configured to determine a predictive component of the beam offset based on the sensor output of the one or more sensors and to determine the one or more compensation signals based on the predictive component of the beam offset.
  • Clause 3 The charged particle beam device of clause 2, wherein the sensor output of at least one of the one or more sensors includes respective time series data, wherein the at least one control unit is configured to determine the predictive component based on an analysis of the time series data of the sensor output of the at least one of the one or more sensors.
  • Clause 4 The charged particle beam device of clause 3, wherein the analysis of the time series data comprises finding fingerprints of one or more predetermined disturbance events in the time series data, and/or applying a recurrent neural network such as a Long Short Term Memory Network.
  • a recurrent neural network such as a Long Short Term Memory Network.
  • Clause 5 The charged particle beam device of clause 4, wherein the at least one control unit is configured to selectively activate a calibration phase, wherein, when operating in the calibration phase, the at least one control unit is configured to populate a repository with the fingerprints of the one or more disturbance events, e.g., based on at least one of identifying respective repetitions of the fingerprints in the time series data or obtaining user input data that is indicative of a respective one of the one or more disturbance events.
  • Clause 6 The charged particle beam device of clause 4 or 5, wherein the at least one control unit is configured to selectively activate a calibration phase, wherein, when operating in the calibration phase, the at least one control unit is configured to train a predictive model based on the time series data measured during the calibration phase to find the fingerprints and to thereby enable the predictive model to determine the predictive component.
  • Clause 7 The charged particle beam device of any one of the preceding clauses, wherein the at least one control unit is further configured to predict, based on at least one of the sensor output or the one or more compensation signals, an accuracy of operation of the charged particle beam device during a prediction time duration.
  • Clause 8 The charged particle beam device of clause 7, wherein the at least one control unit is further configured to selectively abort operation of the charged particle beam device depending on the accuracy of operation, e.g., by blanking the beam.
  • Clause 9 The charged particle beam device of any one of the preceding clauses, wherein the one or more disturbances comprise multiple disturbances, wherein the at least one control unit is configured to determine the one or more compensation signals based on cross-dependencies between the multiple disturbances.
  • Clause 10 The charged particle beam device of clause 9, wherein the at least one control unit is configured to determine the one or more compensation signals based on a cross dependency between temperature-induced disturbances and pressure-induced disturbances.
  • Clause 11 The charged particle beam device of any one of the preceding clauses, wherein the at least one control unit is configured to determine the one or more compensation signals based on a pre-trained algorithm.
  • Clause 12 The charged particle beam device of clause 11 , wherein the pre-trained algorithm comprises a deep neural network such as a convolutional neural network. Clause 13. The charged particle beam device of clause 11 , wherein the pre-trained algorithm comprises a machine learning algorithm.
  • Clause 14 The charged particle beam device of any one of the preceding clauses, wherein the at least one control unit is configured to determine the one or more compensation signals based on pre-parameterized functional dependencies.
  • Clause 15 The charged particle beam device of any one of the preceding clauses, wherein the at least one control unit is configured to determine the one or more compensation signals using a lookup table linking the sensor output with the one or more compensation signals.
  • Clause 16 The charged particle beam device of clause 15, wherein the lookup table is retrieved from a device-specific repository associated with the charged particle beam device.
  • Clause 17 The charged particle beam device of clause 15, wherein the lookup table is retrieved from a cloud storage repository associated with multiple charged particle beam devices.
  • Clause 18 The charged particle beam device of any one of the preceding clauses, wherein the multiple physical quantities are selected from the group comprising: acoustic vibration; vibration; pressure; humidity; temperature; laminar air flow; turbulent air flow; a differential quantity; a change rate of a physical quantity; a vector quantity; a scalar quantity.
  • Clause 19 The charged particle beam device of any one of the preceding clauses, wherein the one or more sensors comprise at least one sensor for measuring a temperature or pressure of a cooling liquid.
  • Clause 20 The charged particle beam device of any one of the preceding clauses, wherein at least one of the one or more sensors is arranged inside a vacuum chamber of the charged particle beam repair device.
  • Clause 21 the charged particle beam device of any one of the preceding clauses, wherein at least one of the one or more sensors is arranged outside of a vacuum chamber of the charged particle beam repair device.
  • one or more sensors comprise at least one sensor for measuring a pressure differential or temperature differential between two or more parts of the charged particle beam repair device.
  • Clause 23 The charged particle beam device of any one of the preceding clauses, wherein the one or more disturbances are selected from the group comprising: direct disturbances affecting the beam offset by deflecting the beam; indirect disturbances affecting the beam offset by impacting one or more parts of the charged particle beam device.
  • Clause 25 The charged particle beam device of any one of the preceding clauses, wherein the at least one control unit is configured to monitor the sensor output of a least one of the one or more sensors or a further sensor output of at least one further sensor and selectively blank the beam based on said monitoring.
  • Clause 26 The charged particle beam device of clause 25, wherein the at least one control unit is configured to selectively blank the beam at lower latency if comparted to said determining the one or more compensation signals.
  • Clause 27 The charged particle beam device of any one of the preceding clauses, wherein the at least one control unit is configured to provide the one or more compensation signals by the charged particle beam device operates in the manipulation mode such as an electron beam induced etching or deposition mode, the manipulation mode comprising repairing or editing semiconductor devices on a wafer mounted to the sample stage.
  • the manipulation mode such as an electron beam induced etching or deposition mode
  • Clause 28 The charged particle beam device of any one of the preceding clauses, wherein the charged particle beam device is a charged particle beam repair device.
  • Clause 29 The charged particle beam device of any one of the preceding clauses, wherein the charged particles are electrons or ions such as Helium or Neon ions.
  • Clause 30 The charged particle beam device of any one of the preceding clauses, wherein the charged particle beam device is a combined focused ion beam and an electron microscope cross-beam device.
  • the charged particle beam device is a charged particle beam repair device, wherein the charged particle beam repair device further comprises a precursor gas source, wherein the at least one control unit is configured to provide, to the beam source, the beam deflection unit, and the precursor gas source, control signals to implement an electron-beam-induced manipulation of a sample mounted to the sample stage, wherein the at least one control unit is configured to provide the one or more compensation signals during the electron-beam-induced manipulation.
  • Clause 32 The charged particle beam device of any one of the preceding clauses, wherein the at least one control unit is configured to provide the one or more compensation signals while the charged particle beam device operates in an imaging mode that comprises imaging structures of the sample mounted to the sample stage.
  • Clause 33 The charged particle beam device of any one of the preceding clauses, wherein the at least one control unit determines the one or more compensation signals in accordance with a linear or a nonlinear dependency of the one or more compensation signals on the sensor output.
  • Clause 34 The charged particle beam device of any one of the preceding clauses, wherein the one or more disturbances comprise multiple disturbances, wherein the one or more physical quantities comprise multiple physical quantities.
  • the one or more compensator modules are selected from the group comprising: external, i.e. , outside of a vacuum chamber or housing of the charged particle beam device, coils for applying magnetic fields; external electric field plates for applying electric fields; Helmholtz coil pairs; an active cooling or heating element; an active damping element; a pressure-control element such as a pump.
  • a charged particle beam device comprising a beam source, a beam deflection unit, and a sample stage, the beam deflection unit being configured to deflect a beam originating from the beam source to position the beam on the sample stage, the charged particle beam device comprising:
  • one or more sensors configured to measure one or more disturbances of one or more physical quantities that each affect a beam offset of the beam on the sample stage
  • control unit configured to determine, based on the sensor output of the one or more sensors, metadata that is indicative of one or more compensation operations to counteract the beam offset in image data acquired by the charged particle beam device operating in an imaging mode, and to store the metadata in association with the image data.
  • Clause 37 The charged particle beam device of clause 36, wherein the one or more compensation operations are selected from the group comprising: imaging shift; rotation; skew; contrast enhancement; blur reduction.
  • Clause 40 The method of clause 38 or 39, wherein said compensating or reducing of the disturbances comprises moving a sample stage of the charged particle beam device in a direction of a beam offset caused by the disturbances.
  • Clause 41 The method of any one of clauses 38 to 40, wherein the time latency between said monitoring and said compensating or reducing is less than 50 milliseconds, optionally less than 500 milliseconds, further optionally less than 5 seconds.
  • Clause 42 The method of any one of clauses 38 to 41 , wherein said compensating or reducing is executed while the charged particle beam device operates in a manipulation mode that comprises an electron-beam-induced etching or deposition of material from or onto a wafer mask.
  • Clause 44 The method of clause 43, wherein said selectively aborting operation of the charged particle beam device comprises blanking the beam.
  • Clause 45 The method of clause 43 or 44, further comprising:
  • a method of manipulating or imaging a sample mounted to a sample stage of a charged particle beam device comprising a beam source, a beam deflection unit, and the sample stage, the beam deflection unit being configured to deflect a beam of charged particles originating from the beam source to position the beam on the sample stage, wherein the method comprises:
  • Clause 47 The method of clause 46, wherein the method is executed by the control unit of the charged particle beam device of clause 1 .
  • a method of post-processing image data that is acquired by a charged particle beam device that comprises a beam source, a beam deflection unit, and a sample stage, the beam deflection unit being configured to deflect a beam of charged particles originating from the beam source to position the beam on the sample stage, wherein the method comprises:
  • repair tasks could also be employed using physical action using ions, i.e., FIB etching.
  • the techniques disclosed herein are not limited to a charged particle beam repair devices, but can also used for compensating disturbances during a circuit edit operation at a semiconductor wafer, or during an inspection or measurement task during operation in the imaging mode of a respective imaging charged particle beam device.
  • a charged particle beam device employing charged particles such as electrons or ions.
  • techniques disclosed herein may be applied to non-charged particle beam devices, e.g., for photon-based microscopes.
  • disturbances can be caused by physical quantities such as seismic variation, acoustics, pressure changes, changes of wind speed, changes of humidity, temperature, etc.
  • Respective beam devices could be, e.g., lasers, x-ray investigation tools, etc.
  • a compensation can be achieved by shifting the sample stage to counteract the beam offset, as has been explained in connection with FIG. 1 - FIG. 5.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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Abstract

Des dispositifs à faisceau de particules chargées, par exemple, pour des tâches de réparation, sont soumis à des perturbations. Une sortie de capteur d'un ou de plusieurs capteurs est utilisée pour compenser les perturbations, par exemple, tout en exécutant un mode de manipulation pour réparer des défauts sur un masque de lithographie.
PCT/EP2023/076396 2022-09-26 2023-09-25 Compensation de perturbation pour dispositifs à faisceau de particules chargées WO2024068547A1 (fr)

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US3842272A (en) 1973-07-24 1974-10-15 American Optical Corp Scanning charged particle microprobe with external spurious electric field effect correction
US4698503A (en) 1985-01-23 1987-10-06 Hitachi, Ltd. Focusing apparatus used in a transmission electron microscope
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