WO2024067380A1 - 一种气体输送组件及气相反应装置 - Google Patents

一种气体输送组件及气相反应装置 Download PDF

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Publication number
WO2024067380A1
WO2024067380A1 PCT/CN2023/120572 CN2023120572W WO2024067380A1 WO 2024067380 A1 WO2024067380 A1 WO 2024067380A1 CN 2023120572 W CN2023120572 W CN 2023120572W WO 2024067380 A1 WO2024067380 A1 WO 2024067380A1
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WO
WIPO (PCT)
Prior art keywords
gas
gas delivery
delivery assembly
annular groove
concentric annular
Prior art date
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PCT/CN2023/120572
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English (en)
French (fr)
Inventor
邢志刚
张志明
刘雷
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楚赟精工科技(上海)有限公司
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Publication of WO2024067380A1 publication Critical patent/WO2024067380A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Definitions

  • the present invention relates to the technical field of semiconductor devices and apparatuses, and in particular to a gas delivery component and a gas phase reaction apparatus.
  • the reaction chamber is a crucial chamber in the semiconductor device manufacturing process, in which the reaction chamber of the gas phase reaction device is used to bring in reactants and establish a flow field.
  • the reaction chamber of the gas phase reaction device is used to bring in reactants and establish a flow field.
  • the carrier plate that carries the material growth substrate in the airflow usually rotates during the material growth process.
  • the gas flow near the outer edge of the carrier plate has a tangential flow velocity formed by the dragging of the carrier plate in addition to the flow velocity along the main axis of the reaction chamber.
  • the existence of the tangential flow velocity will increase the total velocity of the airflow in the edge flow field, especially when the carrier plate rotates at a high speed.
  • the tangential flow velocity is large, which will generate vortices in the flow field in the direction of the incoming flow in the edge area of the carrier plate.
  • the gas vortex will have many negative effects on the use of the cavity: reducing the uniformity of the grown material on the substrate in the vortex area and the nearby area; reducing the stability of the cavity growth environment and growth process, etc.
  • the distribution and shape of the gas flow field are usually adjusted by adjusting the following three overall process parameters: the total gas volume of the reaction chamber process, the reaction chamber pressure, and the carrier plate speed.
  • the above-mentioned gas vortex can be suppressed and eliminated in a certain direction and range; but such adjustment itself limits the available process parameter range.
  • the amount of carrier gas and source material gas often increases, resulting in a decrease in the efficiency of source material use, and an increase in material consumption and growth costs.
  • the present invention provides a gas delivery component and a gas phase reaction device to solve one or more of the above-mentioned problems.
  • the present invention provides a gas delivery component in a first aspect.
  • the gas delivery component is used in a gas phase reaction device.
  • the gas phase reaction device is provided with a carrier plate.
  • the gas delivery component includes a gas delivery component located in the gas delivery component. an internal gas delivery component in the middle region of the component and a peripheral gas delivery component surrounding the middle region; wherein
  • the peripheral gas delivery assembly includes a plurality of tubular channels and at least one annular groove, wherein the annular groove is connected to the tubular channel to facilitate the outflow of gas in the tubular channel, and the opening side of the annular groove is a gas outlet side facing the carrier plate;
  • a main axis is defined which is perpendicular to the surface where the gas outlet side is located and passes through the geometric center of the gas outlet surface of the gas delivery component, and the end point of the tube axis of each tubular channel at the connection between the tubular channel and the annular groove is defined as point O, and the tangent plane about the main axis passing through point O is the tangent plane where point O of the tubular channel is located, and at least part of the projection of the tube axis of the tubular channel on the tangent plane where the corresponding point O is located has an angle of 100° with the main axis. The angle is not 0, so that the gas flowing out of the peripheral gas delivery assembly forms a rotating airflow, and the rotation direction of the rotating airflow is consistent with the rotation direction of the carrier plate during the reaction process.
  • the annular groove is any one of a conical groove, a trapezoidal groove, a rectangular groove, an arc groove and a polygonal groove.
  • the peripheral gas delivery component includes an annular groove, the tubular channel is distributed along at least one concentric annular area, and the tubular channel is correspondingly connected to the annular groove.
  • the peripheral gas delivery component includes a plurality of concentric annular grooves, the tubular channel is distributed along a plurality of concentric annular regions, the number of the concentric annular grooves is less than or equal to the number of the concentric annular regions, each of the plurality of concentric annular grooves is arranged corresponding to at least one of the plurality of concentric annular regions, so that each concentric annular groove is connected to the tubular channel in the corresponding concentric annular region.
  • the number of tubular channels in each of the concentric annular regions is the same, or the number of tubular channels in the outermost annular region is greater than the number of tubular channels in the innermost annular region, or the number of tubular channels in multiple concentric annular regions gradually increases from the innermost annular region to the outermost annular region.
  • the opening widths of the concentric annular grooves are the same, or the opening width of the outermost annular groove is greater than the opening width of the innermost annular groove, or the opening widths of the concentric annular grooves gradually increase from the innermost annular groove to the outermost annular groove; or the opening area of the outermost annular groove is greater than the opening area of the innermost annular groove, or the opening area of the concentric annular grooves gradually increases from the innermost annular groove to the outermost annular groove.
  • the angle between the projection of the axis of at least part of the tubular channel on the tangent plane corresponding to the point O and the main axis is same.
  • the plurality of concentric annular grooves correspond to the plurality of concentric annular regions one by one, and the angle between the projection of the tube axis on the tangent plane corresponding to the O point and the main axis in the same concentric annular region is same.
  • the angle between the projection of the tube axis in the outermost annular region on the tangent plane corresponding to the point O and the main axis is Not less than the projection of the tube axis in the innermost annular region on the tangent plane corresponding to the point O.
  • the angle between the main axis Or from the innermost annular area to the outermost annular area of the plurality of concentric annular areas, the angle between the projection of the tube axis on the tangent plane corresponding to the O point and the main axis gradually increase.
  • a straight line passing through any point O and parallel to the main axis is defined as the axial line OO' of point O
  • a plane passing through the main axis and the axial line OO' is defined as the P0 plane
  • a vertical plane where the tube axis is located is a plane formed by the tube axis and the axial line OO'; wherein an angle ⁇ is formed between the vertical plane where the tube axis of at least part of the tubular channel is located and the tangent plane where point O is located;
  • the annular groove forms a first intersection line and a second intersection line with the surface where the air outlet side is located, wherein the first intersection line has a first intersection point M with the P0 surface, the second intersection line has a second intersection point N with the P0 surface, an angle ⁇ is formed between OM and ON, the angular bisector of the angle ⁇ is OQ, and an angle ⁇ is formed between OQ and the axial line OO'; wherein at least one of the angle ⁇ and the angle ⁇ is not 0.
  • the end of the angle bisector OQ close to the carrier plate and the end of the tube axis close to the carrier plate are both inclined in the same direction away from or close to the main axis, and the angle ⁇ is the same as the angle ⁇ .
  • the gas delivered by the peripheral gas delivery assembly comes from the same gas supply end, and the gas delivered by the peripheral gas delivery assembly is uniformly regulated.
  • the gas phase reaction device comprises at least one isolating element, which separates the peripheral gas delivery component into a plurality of mutually independent sub-regions, and the gases delivered in at least two of the sub-regions are independently regulated.
  • the multiple sub-regions are multiple concentric annular regions, the flow rate of the gas introduced into the outermost sub-region is not less than the flow rate of the gas introduced into the innermost sub-region, and/or the average molecular weight of the gas introduced into the outermost sub-region is not less than the average molecular weight of the gas introduced into the innermost sub-region.
  • the multiple sub-regions are multiple concentric annular regions, and the flow rate of the introduced gas gradually increases from the innermost sub-region to the outermost sub-region, and/or the average molecular weight of the introduced gas gradually increases.
  • the peripheral gas delivery assembly covers an edge of the carrier plate, and the coverage area does not exceed 36% of the area of the carrier plate.
  • the peripheral gas delivery assembly is located outside the carrier plate.
  • the gas transported by the internal gas delivery component is a reaction source gas and a carrier gas, which are used to react to generate a target product
  • the gas transported by the peripheral gas delivery component is one or more of a purge gas, a carrier gas, and a reaction source gas.
  • the gases transported by the peripheral gas delivery component do not react with each other, or the gases transported by the peripheral gas delivery component react with each other but do not generate the target product.
  • the present invention provides a gas phase reaction device, comprising:
  • a carrier plate is disposed in the reaction chamber, wherein the rotation speed of the carrier plate during the reaction is ⁇ 200 RPM;
  • a gas delivery component is arranged opposite to the carrier plate, and the gas delivery component is the gas delivery component described in the first aspect.
  • the gas delivery assembly and gas phase reaction device of the present invention have the following beneficial effects:
  • the gas delivery assembly of the present invention comprises an internal gas delivery assembly located in the middle area of the gas delivery assembly and a peripheral gas delivery assembly surrounding the middle area;
  • the peripheral gas delivery assembly comprises a plurality of tubular channels and at least one annular groove, the annular groove is connected to the tubular channel to facilitate the outflow of gas in the tubular channel, and the projection of the axis of at least part of the tubular channel on the tangent plane where the end point O of the connection between the tubular channel and the annular groove is located has an angle of 100° with the main axis of the gas delivery assembly. is not 0, so that the gas flowing out of the peripheral gas delivery assembly forms a rotating airflow, and the rotation direction of the rotating airflow is consistent with the rotation direction of the carrier plate during the reaction process.
  • the rotating airflow has a tangential speed and momentum, which reduces the relative speed of the airflow in the middle flow field and the airflow in the edge flow field in the reaction chamber, thereby making the flow field in the reaction chamber flow collision mixing and streamline turning process in the edge area smoother, thereby suppressing or completely eliminating the generation of eddy currents in the reaction chamber, making the laminar flow characteristics of the reaction chamber flow field more stable.
  • it also expands the overall process parameters, such as the total process gas volume of the reaction chamber, the pressure of the reaction chamber, the rotation speed of the carrier plate, etc.
  • the expansion of the usable range of the above process parameters can further help improve the utilization rate of the carrier gas and the source material gas, so it can effectively reduce the cost of material growth.
  • it can also reduce the particle defects in the growth material on the carrier plate in the reaction chamber and improve the yield of the product.
  • the carrier plate rotates at a high speed (the rotation speed is above 200RPM)
  • the gas phase reaction device with the above-mentioned gas delivery component can reduce and suppress the generation of gas flow vortices, obtain a uniform and stable gas flow field, thereby expanding the settable range of process parameters, helping to improve the utilization rate of carrier gas and source material gas, and thus effectively reducing the cost of material growth.
  • FIG. 1 is a schematic front cross-sectional view of a reaction chamber of a gas-phase reaction device in which a gas delivery assembly provided in a first embodiment of the present invention is located.
  • FIG. 2 is a bottom view schematically showing the gas delivery assembly in FIG. 1 .
  • FIG. 3 is a bottom view of a gas delivery assembly according to an alternative embodiment.
  • FIG. 4 is a schematic diagram of a three-dimensional structure of a peripheral gas delivery component of the gas delivery component shown in FIG. 1 from a top view.
  • FIG. 5 is a schematic cross-sectional view of the peripheral gas delivery assembly along the radial direction L0 - L0 shown in FIG. 4 , and shows the three-dimensional perspective structure of the peripheral gas delivery assembly from a top view.
  • FIG. 6 is a bottom view of a peripheral gas delivery component of the gas delivery component shown in FIG. 1 .
  • FIG. 7 is a schematic side cross-sectional view along line HH in FIG. 6 .
  • FIG8 is a schematic front cross-sectional view along line K-K in FIG6 .
  • FIG9 is a bottom view schematic diagram of the structure of the peripheral gas delivery component of the gas delivery component provided in the second embodiment of the present invention, wherein the tubular channel in the peripheral gas delivery component is shown in a partial perspective manner.
  • FIG. 10 is a partial enlarged schematic diagram of portion P in FIG. 9 .
  • FIG. 11 is a schematic front cross-sectional view of the peripheral gas delivery assembly along line C-C shown in FIG. 9 .
  • FIG. 12 is a schematic diagram showing a radial cross-sectional view of the peripheral gas delivery assembly shown in FIG. 9 , and illustrates a three-dimensional perspective structure of the peripheral gas delivery assembly from a top view.
  • FIG. 13 is a schematic diagram showing the three-dimensional structure of the peripheral gas delivery component of the gas delivery component provided in the fifth embodiment of the present invention from a top view.
  • Gas delivery assembly 1024 First side 101 Internal gas delivery assembly 1025 Second side 1010 first gas delivery channel 1027 (1027') annular groove 1010-1 First gap 10271(10271') First concentric annular groove 1010-2 Second gap 10272 (10272') Second concentric annular groove 102(102')(102”) Peripheral gas delivery assembly 10273(10273') Third concentric annular groove 1020 (1020') (1020") Second gas delivery channel 103 Isolation element 1020-1(1020'-1) Tubular channel 200 Reaction chamber 1021 first sub-area 201 carrier plate 1022 Second sub-area 300 Gas supply end 1023 Third sub-area 301 Gas supply pipeline
  • the present embodiment provides a gas delivery assembly, which is used for a gas phase reaction device.
  • the gas phase reaction device includes a reaction chamber 200, in which a carrier plate 201 is disposed, and a gas delivery assembly 100 is disposed opposite to the carrier plate 201, and is used to deliver reaction gas to the reaction chamber 200.
  • the gas phase reaction device may be, for example, a gas phase deposition device, specifically, a chemical vapor deposition device, a physical vapor deposition device, a plasma enhanced vapor deposition device, a metal organic chemical vapor deposition (MOCVD) device, etc.
  • MOCVD metal organic chemical vapor deposition
  • the present embodiment is described by taking a gas delivery assembly of an MOCVD device as an example. It should be understood that the device is merely exemplary, and the present invention is not limited to this device.
  • the gas phase reaction device of the present embodiment has a reaction chamber 200.
  • the cross section of the reaction chamber 200 of the gas phase reaction device is generally a circular or quasi-circular structure, or may be a rectangular structure or other structures known to those skilled in the art, which will not be described in detail here.
  • the reaction chamber 200 may be a vertical flow chamber with vertical air intake, or a horizontal flow chamber with central air intake.
  • the reaction chamber 200 may be a normal chamber in which the gas delivery component 100 and the carrier plate 201 are arranged relative to each other, and the gas delivery component 100 is located at the upper part and the carrier plate 201 is located at the lower part, or it may be an inverted chamber in which the gas delivery component 100 and the carrier plate 201 are arranged relative to each other, and the carrier plate 201 is located at the upper part and the gas delivery component 100 is located at the lower part.
  • the present embodiment takes the normal vertical flow chamber in which the cross section of the reaction chamber 200 shown in FIG1 is circular, and the gas delivery component 100 is located at the upper part and the carrier plate 201 is located at the lower part as an example to illustrate the gas delivery component 100.
  • a carrier plate 201 for carrying a substrate to be processed is provided in a reaction chamber 200, and the carrier plate 201 rotates around a rotation axis A during vapor deposition.
  • a gas delivery assembly 100 is arranged opposite to the carrier plate 201, and the gas delivery assembly 100 is, for example, arranged at the top of the reaction chamber 200, and gas is injected into the reaction chamber 200, and the carrier plate 201 is located below the gas delivery assembly 100.
  • the gas delivery assembly 100 provided in this embodiment has a disc-shaped structure as a whole, including an internal gas delivery assembly 101 for conveying a first gas and a peripheral gas delivery assembly 102 for conveying a second gas.
  • the internal gas delivery assembly 101 is located in the middle area of the gas delivery assembly 100, and the peripheral gas delivery assembly 102 is located in the peripheral area of the gas delivery assembly 100, and is arranged around the internal gas delivery assembly 101.
  • the gas phase reaction device further includes a gas supply end 300 and a gas supply pipeline 301, and the gas supply end 300 is connected to the internal gas delivery component 101 and the peripheral gas delivery component 102 through the gas supply pipeline 301, and is used to supply the first gas to the internal gas delivery component 101 and the second gas to the peripheral gas delivery component 102.
  • the average molecular weight of the second gas is greater than or equal to the average molecular weight of the first gas.
  • the peripheral gas delivery component 102 has a first side 1024 and a second side 1025 that are arranged opposite to each other, and the first side 1024 is a gas outlet surface facing the carrier plate 201.
  • the internal gas delivery component 101 also has a gas outlet surface facing the carrier plate 201.
  • a main axis B is defined, and the main axis B is perpendicular to the surface where the first side 1024 is located (which can be equivalent to the gas outlet surface of the disc-shaped gas delivery component 100) and passes through the geometric center of the gas outlet surface of the gas delivery component 100.
  • the main axis B can be parallel to the rotation axis A of the carrier plate 201, or it can be non-parallel.
  • the main axis B is parallel to the rotation axis A of the carrier plate 201.
  • the rotation axis A is parallel to, and preferably, the main axis B coincides with, the rotation axis A.
  • a bottom view of the gas delivery assembly 100 is shown. It should be understood that in the present invention, the “bottom view” refers to the viewing direction from the first side 1024 to the second side 1025, and the “top view” refers to the viewing direction from the second side 1025 to the first side 1024.
  • the internal gas delivery assembly 101 includes a plurality of first gas delivery channels 1010, which are distributed in the internal gas delivery assembly 101.
  • the first gas delivery channel 1010 is configured as a plurality of slit-shaped channels, which extend in the same direction.
  • the first gas is a reaction source gas and a carrier gas.
  • the first gas is a group III metal organic source gas, a group V hydride source gas, and a carrier gas.
  • the first gas delivery channel 1010 includes a first slit 1010-1 and a second slit 1010-2, the first slit 1010-1 is used to deliver the group III metal organic source gas and the carrier gas to the gas phase reaction region, and the second slit 1010-2 is used to deliver the group V hydride source gas and the carrier gas to the gas phase reaction region, thereby providing the group III metal organic source gas and the group V hydride source gas to react on the substrate to be processed to generate group III-V compounds.
  • the first slits 1010-1 and the second slits 1010-2 are alternately arranged in the internal gas delivery assembly 101.
  • a third slit (not shown) is further included between the alternately arranged first slits 1010-1 and the second slits 1010-2, and a carrier gas (or purge gas) that does not contain a reactive gas and does not react with the reactive gas flows out of the third slit.
  • the first gas delivery channel 1010 is a hole-shaped structure, for example, a circular hole, an elliptical hole, a diamond hole or the like. These holes can be arranged as concentric ring areas, or strip-shaped interval distribution areas, or several groups of holes staggered distribution, or several fan-shaped areas, etc. Those skilled in the art can adjust the shape and position relationship of the hole distribution according to actual process requirements, which is not limited here.
  • the first gas delivery channel 1010 may also be a combination of a slit channel and a hole structure, wherein the distribution, shape and positional relationship of the slit channel and the hole structure may also be adjusted according to actual process requirements.
  • the airflow direction formed by the first gas ejected from the first gas delivery channel 1010 is parallel to the main axis B, that is, the first gas delivery channel 1010 is a vertical airflow channel, and the airflow direction formed is vertically toward the carrier plate 201 .
  • the peripheral gas delivery component 102 includes a second gas delivery channel 1020 for delivering a second gas
  • the second gas can be one or more of a purge gas, a carrier gas, and a reaction source gas.
  • the second gas contains at least two gases
  • the different gases do not react with each other or react with each other but do not generate a target product. If all the reaction sources participating in the reaction are introduced into the peripheral gas delivery component 102, unnecessary growth will be caused (such as the deposition of III-V compounds generated by the reaction on the wall of the device), and source gas will be wasted, reducing the maintenance cycle of the equipment. In addition, some reaction sources will enter the internal gas phase reaction area, affecting the uniformity of the growing material.
  • the second gas delivery channel 1020 introduces the second gas phase reaction area.
  • the second gas contains at least two gases and different gases do not react with each other, so the above problems can be effectively avoided and the uniformity of the grown material can be improved.
  • the second gas can be composed of a V-group hydride source gas and a carrier gas, or a V-group hydride source gas and a purge gas.
  • the second gas delivery channel 1020 includes a plurality of tubular channels 1020-1 and at least one annular groove 1027, wherein at least one annular groove 1027 is connected to a plurality of tubular channels 1020-1 to cooperate with the gas outflow in the tubular channels 1020-1, and the opening side of the annular groove 1027 (i.e., the side away from the tubular channel) is the gas outlet side facing the carrier plate 201.
  • the annular groove 1027 can be any one of a conical groove, a trapezoidal groove, a rectangular groove, an arc groove and a polygonal groove, that is, the cross-sectional shape of the annular groove 1027 in the thickness direction of the peripheral delivery component 102 is any one of a cone, a trapezoid, a rectangle, an arc and a polygon.
  • each annular groove 1027 in the same peripheral gas delivery component 102 is a groove of the same cross-sectional shape.
  • the tubular channel 1020-1 extends from the second side 1025 of the peripheral gas delivery component 102 to the first side 1024.
  • a plurality of tubular channels 1020-1 may be distributed in the peripheral gas delivery assembly 102 in any manner, for example, in an annular distribution or in a fan-shaped annular distribution.
  • the tubular channels 1020-1 are distributed in an annular distribution, and more preferably, they may be distributed along a plurality of concentric annular regions.
  • the number of tubular channels 1020-1 in each concentric annular region is the same; or, the number of tubular channels 1020-1 in the outermost annular region is greater than the number of tubular channels 1020-1 in the innermost annular region; or, the number of tubular channels 1020-1 gradually increases from the innermost annular region to the outermost annular region of a plurality of concentric annular regions; or, the number of tubular channels 1020-1 gradually increases from the innermost annular region to the outermost annular region of a plurality of concentric annular regions, and the number of tubular channels 1020-1 in at least two adjacent annular regions is the same.
  • the specific number distribution depends on the process requirements.
  • the number of the annular groove 1027 may be one, or may include a plurality of concentric annular grooves as shown in FIG. 5 .
  • the annular groove 1027 is connected to all tubular channels 1020-1 in the peripheral gas delivery component 102, and the tubular channels 1020-1 can be distributed in one annular area or along multiple concentric annular areas.
  • the annular groove 1027 includes a plurality of concentric annular grooves.
  • the annular groove 1027 includes a first concentric annular groove 10271, a second concentric annular groove 10272, and a third concentric annular groove 10273.
  • the number of tubular channels 1020-1 is plural and distributed along a plurality of concentric annular regions.
  • Each concentric annular groove in the annular groove 1027 is arranged corresponding to at least one concentric annular region, so that each concentric annular groove 1027 is connected to the tubular channel 1020-1 in the corresponding concentric annular region.
  • the number of concentric annular grooves in the annular groove 1027 is equal to the number of concentric annular regions.
  • the number of concentric annular grooves 1027 is the same, and each concentric annular groove in the annular groove 1027 is arranged corresponding to a concentric annular area, that is, the concentric annular grooves correspond to the annular areas one by one, and each concentric annular groove is connected to the tubular channel 1020-1 distributed on the concentric annular area corresponding to it, and the tubular channel 1020-1 distributed on each concentric annular area corresponding to each annular groove 1027 is distributed in at least one annular form.
  • the number of concentric annular grooves of the annular groove 1027 and the number of concentric annular areas may also be different, for example, the number of concentric annular grooves of the annular groove 1027 is multiple and less than the number of concentric annular areas, and each concentric annular groove in the annular groove 1027 is arranged corresponding to at least one of the multiple concentric annular areas, so that each concentric annular groove is connected to the tubular channel in the corresponding concentric annular area, for example, at least two adjacent concentric annular areas in the multiple concentric annular areas are connected to a concentric annular groove in the annular groove 1027, and the remaining concentric annular areas are connected to the remaining concentric annular grooves one by one.
  • the opening widths of the concentric annular grooves are the same, or the opening width of the outermost annular groove is greater than the opening width of the innermost annular groove; or the opening widths of the concentric annular grooves gradually increase from the innermost annular groove to the outermost annular groove; or the opening widths of the concentric annular grooves gradually increase from the innermost annular groove to the outermost annular groove, and at least two adjacent annular grooves have the same opening width; or the opening area of the outermost annular groove is greater than the opening area of the innermost annular groove, or the opening area of the concentric annular grooves gradually increases from the innermost annular groove to the outermost annular groove; or the opening area of the concentric annular grooves gradually increases from the innermost annular groove to the outermost annular groove, and at least two adjacent annular grooves have the same opening area.
  • the specific structure depends on the process requirements.
  • a plurality of tubular channels 1020-1 are distributed along three concentric annular regions, and the annular groove 1027 includes three concentric annular grooves from the inside to the outside, namely, a first concentric annular groove 10271, a second concentric annular groove 10272, and a third concentric annular groove 10273.
  • the first concentric annular groove 10271, the second concentric annular groove 10272, and the third concentric annular groove 10273 correspond to the three concentric annular regions one by one, and are respectively connected to the tubular channels 1020-1 in the concentric annular regions.
  • the concentric annular groove 1027 corresponds to the groove opening widths d1, d2, and d3 from the first annular groove 10271 to the third annular groove 10273 from the inside to the outside.
  • the groove opening areas corresponding to the groove opening widths d1, d2, and d3 are S1, S2, and S3, respectively.
  • the end point of the axis of each tubular channel 1020-1 at the connection between the tubular channel and the annular groove 1027 is point O
  • the tangent plane passing through point O about the main axis B is the tangent plane where point O of the tubular channel is located.
  • the projection of the axis of at least part of the tubular channel on the tangent plane where point O is located has an angle of 1.1° with respect to the main axis B. The angle is not 0, so that the gas flowing out of the peripheral gas delivery assembly 102 forms a rotating airflow, the speed of the rotating airflow includes an axial component and a tangential component, and the rotation direction of the rotating airflow is consistent with the rotation direction of the carrier plate 201 during the reaction process.
  • this embodiment takes the example that the axis of the tubular channel 1020-1 is located on the tangent plane where the point O of the tubular channel is located, combined with Figures 6 and 7, Figure 7 shows a side view along the line H-H in Figure 6, and the section through the line H-H is the tangent plane where the point O of the middle tubular channel 1020-1 in Figure 6 is located.
  • the end point of the axis of the tubular channel 1020-1 at the connection between the tubular channel 1020-1 and the annular groove 1027 is defined as point O (i.e., the lower end point of the axis), the geometric center of the axis at one end of the second side 1025 of the peripheral gas delivery component 102 is point O1 (i.e., the upper end point of the axis), the axis of the tubular channel 1020-1 is OO1, and the tangent plane about the main axis B passing through point O is the tangent plane where point O of the tubular channel 1020-1 is located.
  • the projection of the axis OO1 of the tubular channel 1020-1 on the tangent plane where point O is located is the axis OO1 itself.
  • at least part of the axis OO1 of the tubular channel 1020-1 has an angle with the main axis B of the gas delivery component 100 (refer to the straight line O1B' parallel to the main axis B shown in FIG. 7 ).
  • horn is not 0. That is, at least part of the tubular channel 1020-1 is inclined relative to the main axis B.
  • tubular channels 1020-1 in the peripheral gas delivery assembly 102 may all be inclined relative to the main axis B; or part of them may be parallel to the main axis B, and part of them may be inclined relative to the main axis B.
  • the tubular channels 1020-1 inclined relative to the main axis B enable the gas flowing out of the peripheral gas delivery assembly 102 to form a rotating airflow, and the rotating direction of the rotating airflow is consistent with the rotating direction of the carrier plate 201 during the reaction process.
  • the air flow velocity of the gas ejected from the second gas delivery channel 1020 can include an axial component and a tangential component, thereby forming a rotating airflow.
  • the ratio of the tangential component to the axial component should not be too large, otherwise it will have a greater impact on the airflow in the internal area, which is not conducive to the balanced injection of gas into the reaction chamber 200.
  • the ratio of the tangential component to the axial component of the airflow velocity of the rotating airflow should not be too large, otherwise it will have a greater impact on the airflow in the internal area, which is not conducive to the balanced injection of gas into the reaction chamber 200.
  • the second gas provided by the gas supply end 300 flows into the reaction chamber 200 through the gas supply pipeline 301 and the second gas delivery channel 1020.
  • the arrangement of at least part of the tubular channel 1020-1 and the annular groove 1027 of the second gas delivery channel 1020 forms a rotating airflow when the gas is ejected from the annular groove 1027.
  • the direction of the rotating airflow is consistent with the rotation direction of the carrier plate 201 during the reaction.
  • the airflow at the edge of the carrier plate 201 will have a tangential velocity due to the drag of the carrier plate (especially for a carrier plate rotating at a high speed (a rotation speed of more than 200RPM), the tangential velocity is greater), which will collide and mix with the incoming flow (generally an axial incoming flow), thereby generating a vortex in the incoming flow direction at the edge of the carrier plate 201.
  • the direction of the rotating airflow is made consistent with the rotation direction of the carrier plate 201 during the reaction process, and the edge flow is changed from axial flow to flow with the same direction of tangential velocity, so that the relative velocity of the airflow in the edge flow field of the reaction chamber 200 is reduced, thereby making the flow collision mixing and streamline turning process of the flow field in the edge area of the reaction chamber 200 smoother, thereby suppressing or completely eliminating the generation of vortices in the reaction chamber 200, so that the laminar flow characteristics of the flow field in the reaction chamber 200 If the direction of the rotating airflow is inconsistent with the rotating direction of the carrier plate 201, the relative speed between the airflow at the edge of the carrier plate 201 and the incoming flow will increase, which will intensify the vortex.
  • the peripheral gas delivery assembly 102 is located outside the carrier plate 201.
  • the peripheral gas delivery assembly 102 can cover the edge of the carrier plate 201, and the coverage area does not exceed 36% of the area of the carrier plate 201 (that is, the radius of the uncovered area along the radial direction of the carrier plate 201 is greater than or equal to 80% of the radius of the carrier plate).
  • the bottom surface of the peripheral gas delivery assembly 102 is projected toward the plane where the top surface of the carrier plate 201 is located to form a bottom surface projection of the peripheral gas delivery assembly 102.
  • the overlapping area between the area surrounded by the edge of the bottom surface projection and the top surface of the carrier plate 201 is defined as the covered area of the carrier plate 201 in the radial direction.
  • the other areas of the top surface of the carrier plate 201 except the covered area are the aforementioned "uncovered areas along the radial direction of the carrier plate 201".
  • the “uncovered area along the radial direction of the carrier plate 201” may be circular or quasi-circular, and the radius of the “uncovered area along the radial direction of the carrier plate 201” may refer to an equivalent radius.
  • the bottom surface projection of the peripheral gas delivery component 102 is the positive projection of the bottom surface of the peripheral gas delivery component 102 toward the plane where the top surface of the carrier plate 201 is located.
  • the reaction source gas can be delivered through the peripheral gas delivery component 102, the area of the carrier plate 201 covered by the peripheral gas delivery component 102 is increased, which can reduce the waste of reaction source gas and further improve the use efficiency of the reaction source.
  • the angle between the projection of the axis of at least part of the tubular channel 1020-1 on the tangent plane where the point O is located and the main axis B is
  • the peripheral gas delivery component 102 includes a plurality of concentric annular grooves 1027
  • the angle between the projection of the tube axis of the tubular channel 1020-1 distributed in each concentric annular region on the tangent plane where the point O is located and the main axis B is
  • the plurality of tubular channels 1020-1 are distributed along three concentric annular regions, namely, along the inner annular region, the middle annular region and the outer annular region, and the angles between the projection of the tube axis of the corresponding tubular channel 1020-1 on the tangent plane where the point O is located and the main axis B are respectively in, or or
  • the specific structure of the tubular channel 1020-1 (such as the angle) can be modified according to different reaction chambers and process requirements. ) for design, This minimizes the eddy current in the gas flow field near the edge of the carrier plate 201 .
  • the gas delivery assembly by taking the upright vertical flow chamber in which the gas delivery assembly is located at the top and the carrier plate is located at the bottom as an example. It should be understood that in any type of reaction chamber, as long as the reaction chamber may generate vortices due to the rotation of the carrier plate, the gas delivery assembly provided by the present invention can be used to suppress or completely eliminate the vortex and balance the gas flow.
  • the present embodiment also provides a gas delivery component, which is used in a gas phase reaction device, for example, a gas phase deposition device.
  • the gas phase reaction device includes a reaction chamber 200, in which a carrier plate 201 is provided, and the gas delivery component 100 is arranged opposite to the carrier plate 201, and is used to deliver the reaction gas to the reaction chamber 200.
  • the similarities between the gas delivery component of the present embodiment and the gas delivery component provided in the first embodiment are not repeated here, and the difference is reflected in the peripheral gas delivery component of the gas delivery component 100 of the present embodiment. Therefore, in the present embodiment, as shown in FIG.
  • the second gas delivery channel 1020' also includes a plurality of tubular channels 1020'-1 and an annular groove 1027'.
  • the projection of the tube axis of at least part of the tubular channel 1020'-1 on the tangent plane where its point O is located has an angle with the main axis B. horn is not 0.
  • the second gas delivery channel 1020' also has the following characteristics.
  • a partial enlarged view of the P portion in Fig. 9 is shown.
  • the vertical plane where the tube axis OO1 of the tubular channel 1020'-1 is located is the plane formed by the tube axis OO1 and the axial line OO';
  • the tangent plane passing through point O with respect to the main axis B is the tangent plane where point O of the tubular channel 1020-1 is located, that is, the plane formed by the tangent line at point O (the tangent line at point O with respect to the main axis B) and the axial line OO'.
  • the annular groove 1027' forms a first intersection line L1 and a second intersection line L2 with the surface where the gas outlet side is located.
  • the third concentric annular groove 10273' in Figure 12 forms a first intersection line L1 and a second intersection line L2 with the surface where the gas outlet side is located, and the plane passing through the main axis B and the axial line OO' is the P0 plane (for example, the cross-section of the peripheral gas delivery assembly 102' shown in Figure 11 along the CC line in Figure 9).
  • the first intersection line L1 and the P0 surface have a first intersection point M
  • the second intersection line L2 and the P0 surface have a second intersection point N
  • an angle ⁇ is formed between OM and ON.
  • the bisector of angle ⁇ is OQ
  • an angle ⁇ is formed between OQ and the axial line OO', wherein at least one of angle ⁇ and angle ⁇ is not 0.
  • an angle ⁇ i is formed between OM and OO'
  • an angle ⁇ o is formed between ON and OO'
  • the size of ⁇ is the angle between angle ⁇ i and angle ⁇ o.
  • the angle ⁇ is the same as the angle ⁇
  • the tubular channel 1020'-1 and the annular groove 1027' are both inclined relative to the tangent plane where the point O is located, and the inclination directions of the two are consistent, that is, the end of the angle bisector OQ close to the carrier plate 201 and the end of the tube axis close to the carrier plate 201 are both inclined in the same direction away from or close to the main axis, for example, both are inclined in the same direction away from the main axis B.
  • the gas flow velocity of the gas injected by the above-mentioned inclined tubular channel 1020'-1 and the annular groove 1027' of the present embodiment includes not only an axial component and a tangential component, but also a radial component.
  • the introduction of the above-mentioned gas flow velocity including a radial component of the gas flow can further reduce the vortex.
  • the second gas delivery channel that makes the velocity of the ejected gas flow include a radial component is not located in the annular groove 1027' (i.e., the first concentric annular groove 10271') closest to the middle area and the tubular channel 1020'-1 corresponding to the first concentric annular groove 10271'.
  • the gas phase reaction device includes a reaction chamber 200, a carrier plate 201 is disposed in the reaction chamber 200, and a gas delivery assembly 100 is disposed opposite to the carrier plate 201, and is used to deliver reaction gas to the reaction chamber 200.
  • the peripheral gas delivery component 102 in the gas delivery component 100 includes a plurality of second gas delivery channels 1020, and the second gas delivery channel 1020 also includes a plurality of tubular channels and at least one annular groove.
  • the tubular channels and the annular grooves may all be the tubular channels 1020-1 and the annular grooves 1027 of the first embodiment; or they may all be the tubular channels 1020'-1 and the annular grooves 1027' of the second embodiment; or they may be a combination of the tubular channels 1020-1 parallel to the main axis B and the tubular channels 1020-1 and the annular grooves 1027 of the first embodiment; or they may be a combination of the tubular channels 1020-1 parallel to the main axis B and the tubular channels 1020'-1 and the annular grooves 1027' of the second embodiment; or they may be a combination of the tubular channels 1020-1 parallel to the main axis B, the tubular channels 1020-1 and the annular grooves 1027 of the first embodiment, and the tubular channels 1020'-1 and the annular grooves 1027' of the second embodiment.
  • the specific type of the second gas delivery channel may be determined according to different gas phase reaction devices, usage scenarios and process requirements.
  • the present embodiment also provides a gas delivery assembly, which is used in a gas phase reaction device, for example, a gas phase deposition device.
  • the gas phase reaction device includes a reaction chamber 200, in which a carrier plate 201 is disposed.
  • the gas delivery assembly 100 is disposed opposite to the carrier plate 201 and is used to deliver the reaction gas to the reaction chamber.
  • the peripheral gas delivery assembly 102 in the gas delivery assembly of this embodiment includes a plurality of second gas delivery channels 1020, the structure of the second gas delivery channels 1020 can be any one of the first to third embodiments, and the distribution of the tubular channels 1020-1 in the second gas delivery channels 1020 is the same as that in the first embodiment.
  • the second gas delivered by the peripheral gas delivery component 102 comes from the same gas supply end, and the gas delivered by the peripheral gas delivery component 102 is uniformly regulated.
  • the peripheral gas delivery assembly 102 located in the peripheral area of the gas delivery assembly 100 is fed with the same gas from the gas supply end 300, so the type and composition of the second gas delivered to the reaction chamber 200 by the annular groove 1027 in the second gas delivery channel 1020 are the same.
  • the above-mentioned same gas does not refer to a single gas type, but refers to the same gas delivered to the reaction chamber 200 by the second gas delivery channel 1020, which can be a single gas or a mixed gas.
  • the second gas can be a V group hydride source gas and a carrier gas, or a purge gas.
  • a control unit (not shown), such as a valve, a mass flow controller, a pressure controller, etc., is also provided between the gas supply end 300 and the peripheral gas delivery component 102.
  • the control unit uniformly regulates the gas of the peripheral gas delivery component 102, thereby ensuring that the types and components of the gases delivered in the peripheral gas delivery component 102 are the same.
  • This embodiment also provides a gas delivery component, which differs from the fourth embodiment in that: in the fourth embodiment, the second gas delivered by the peripheral gas delivery component 102 comes from the same gas supply end 300, and the gas delivered by the peripheral gas delivery component 102 is uniformly regulated, while in this embodiment, the peripheral gas delivery component is divided into multiple independent sub-areas, and the second gas delivered in at least two sub-areas is independently regulated.
  • peripheral gas delivery component 102 As shown in Figure 13, only the top view of the peripheral gas delivery component 102" is shown, and the peripheral gas delivery component 102" is also distributed with a plurality of second gas delivery channels 1020".
  • the peripheral gas delivery component 102" of this embodiment is divided into multiple independent sub-areas by at least one isolation member 103.
  • the reaction chamber 200 is provided with a top plate (not shown), which covers the second side 1025 of the peripheral gas delivery assembly 102", and a plurality of isolation members 103 are provided on the top plate.
  • the isolation members 103 can be ridges protruding from the top plate toward the second side 1025 of the peripheral gas delivery assembly 102", and the isolation members 103 are located between the second side 1025 of the peripheral gas delivery assembly 102" and the top plate.
  • the isolation members 103 divide the second gas delivery channel 1020" in the peripheral gas delivery assembly 102" into a plurality of sub-areas.
  • the isolation member 103 may be formed as a ridge protruding from the second side 1025 of the peripheral gas delivery assembly 102′′ toward the top plate.
  • the isolation member 103 is located between the second side 1025 of the peripheral gas delivery assembly 102′′ and the top plate.
  • the isolation member 103 blocks the peripheral gas delivery assembly 102′′ from contacting the top plate.
  • the second gas delivery channel 1020" in the delivery component 102" is divided into multiple sub-areas.
  • the isolation member 103 may be distributed in a circular form along the circumference of the peripheral gas delivery assembly 102 ′′, dividing the peripheral gas delivery assembly 102 ′′ into at least two concentric annular sub-areas, preferably, each sub-area comprises an annular groove.
  • the flow rate of the gas introduced into the outermost sub-area is adjusted to be not less than the flow rate of the gas introduced into the innermost sub-area; or the average molecular weight of the gas introduced into the outermost sub-area is adjusted to be not less than the average molecular weight of the gas introduced into the innermost sub-area; or the flow rate of the gas introduced into the outermost sub-area is adjusted to be not less than the flow rate of the gas introduced into the innermost sub-area, and the average molecular weight of the gas introduced into the outermost sub-area is not less than the average molecular weight of the gas introduced into the innermost sub-area.
  • the flow rate of the gas introduced is adjusted to gradually increase; or the average molecular weight of the gas introduced is adjusted to gradually increase; or both the flow rate and the average molecular weight of the gas introduced are adjusted to gradually increase.
  • the flow rate of the incoming gas is adjusted to gradually increase and the flow rate of the gas in at least two adjacent sub-regions is the same; or the average molecular weight of the incoming gas is adjusted to gradually increase and the average molecular weight of the gas in at least two adjacent sub-regions is the same; or the flow rate and average molecular weight of the incoming gas are adjusted to gradually increase, and the flow rate of the gas in at least two adjacent sub-regions is the same and the average molecular weight of the gas is the same.
  • the isolation member 103 is formed in the peripheral gas delivery assembly 102" and extends from the center to the edge of the gas delivery assembly 100, dividing the peripheral gas delivery assembly 102" into at least two fan-shaped sub-areas.
  • the areas of at least two fan-shaped sub-areas are the same.
  • the isolation members 103 are distributed in a circular form along the circumference of the peripheral gas delivery assembly 102", as shown in Figure 13, taking two isolation members 103 as an example, the two isolation members 103 and the side wall of the peripheral gas delivery assembly 102" divide the peripheral gas delivery assembly 102" into three sub-areas: a first sub-area 1021 located at the radial innermost side, a second sub-area 1022 located outside the first sub-area 1021, and a third sub-area 1023 located at the radial outermost side, and correspond to the first concentric annular groove 10271', the second concentric annular groove 10272', and the third concentric annular groove 10273' as shown in Figure 12, respectively.
  • the above-mentioned first sub-area 1021, the second sub-area 1022 and the third sub-area 1023 are respectively connected to independent 300 is connected to the gas supply end 300.
  • the gas supply end 300 includes several different gas sources, each sub-region is connected to several different gas sources, and a control unit (not shown) is provided between the gas source and each sub-region, such as a valve, a mass flow controller, a pressure controller, etc.
  • the control unit controls the gas entering each sub-region separately, so that the composition and flow rate of the gas entering the first sub-region 1021, the second sub-region 1022 and the third sub-region 1023 can be the same or different, and the above parameters can be independently controlled, thereby the flow rate or composition of the gas entering the first sub-region 1021, the second sub-region 1022 and the third sub-region 1023 can be controlled separately.
  • the control possibility of the gas entering the reaction chamber 200 through the peripheral gas delivery component 102" is increased, and the effect of better suppressing or completely eliminating the vortex gas flow in the reaction chamber is achieved.
  • the first sub-region 1021 and the second sub-region 1022 are connected to the same gas source and are regulated by the same control unit, and the third sub-region 1023 is connected to another gas source and is independently regulated by another control unit.
  • the gases in the sub-regions can be independently regulated, which will not be described in detail here.
  • the flow rates of the second gas injected from the first sub-region 1021, the second sub-region 1022 and the third sub-region 1023 are F1, F2, and F3, respectively, and the corresponding average molecular weights of the injected second gases are M1, M2, and M3, respectively, wherein F1 ⁇ F2 ⁇ F3, or M1 ⁇ M2 ⁇ M3, or F1 ⁇ F2 ⁇ F3 and M1 ⁇ M2 ⁇ M3.
  • the design of the above sub-areas can reduce the impact on the airflow in the inner area, which is beneficial to balance the gas injected into the reaction chamber 200, obtain better suppression and elimination of airflow vortex effect, and then help improve gas utilization.
  • the present embodiment provides a gas phase reaction device, which can be referred to in FIG. 1 , and includes a reaction chamber 200, in which a carrier plate 201 is arranged, and the rotation speed of the carrier plate 201 during the reaction process is ⁇ 200RPM; and a gas delivery assembly 100 arranged opposite to the carrier plate 201.
  • the gas delivery assembly 100 is any one of the embodiments 1 to 5.
  • the gas phase reaction device can reduce and suppress the generation of gas flow vortices, obtain a uniform and stable gas flow field, thereby expanding the settable range of process parameters, helping to improve the utilization rate of carrier gas and source material gas, and thus can effectively reduce the cost of material growth.

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Abstract

本发明提供一种气体输送组件及气相反应装置，气体输送组件包括位于气体输送组件中间区域的内部气体输送组件和环绕中间区域的外围气体输送组件；外围气体输送组件包括若干管状通道及至少一个环形沟槽，环形沟槽与管状通道连通用以配合管状通道内的气体流出，至少部分管状通道的管轴在所述管状通道与环形沟槽连接处的端点所在切平面上的投影与气体输送组件的主轴线之间具有角φ，φ不为0，使得从外围气体输送组件流出的气体形成旋转气流，且旋转气流的旋转方向与承载盘在反应过程中的旋转方向一致。该旋转气流使得反应室内中间流场气流与边缘流场气流的相对速度减小，由此抑制或完全消除反应腔室内涡流的产生。

Description

一种气体输送组件及气相反应装置 技术领域
本发明涉及半导体器件及装置技术领域，特别涉及一种气体输送组件及气相反应装置。
背景技术
反应腔室是半导体器件制程中至关重要的腔室，其中气相反应装置的反应腔室是由气体带入反应物及建立流场的。例如，对于通过气相反应生长材料的反应腔室，在进行工艺生长过程中，气体源物料的输送及生长反应后副产物的带走，是通过载气与反应物气体共同建立的反应腔室流场完成的。
在气流中承载材料生长基片的承载盘，在材料生长过程中通常是旋转的，而对于承载盘需要旋转的反应腔，由于承载盘的旋转，在承载盘外边缘附近的气流，气体除了有沿着反应腔主轴方向的流动速度，还有被承载盘拖拽形成的切向流动速度。切向流动速度的存在，会增大边缘流场气流的总速度，尤其是承载盘高速旋转的情况下，切向流动速度较大，会在承载盘边缘区域来流方向的流场中产生涡旋。气体涡旋会对腔体的使用带来多方面的负面影响：降低涡流区域及附近区域基片上生长材料的均匀性；降低腔体生长环境及生长工艺的稳定性等。
对于气体携带反应物的反应腔室，在进行实际的材料生长过程中，气流流场的分布与形态通常通过对如下三个整体工艺参数进行调整：反应腔工艺总气量、反应腔压力、承载盘转速。通过以上三个整体工艺调整参数的设定调整，可以在一定的方向和范围内抑制及消除上述气体涡旋；但如此的调整本身就对可用的工艺参数范围产生了限制。并且，这些整体工艺参数的调整以消除气体涡旋的过程中，往往会增大载气气体和源物料气体的用量，造成源物料使用效率降低，增加了物料耗用量和生长成本。
发明内容
鉴于现有技术中气相反应装置中气体流场存在的上述不足及缺陷，本发明提供一种气体输送组件及气相反应装置，以解决上述一个或多个问题。
为了达到上述目的，第一方面本发明提供一种气体输送组件，该气体输送组件用于气相反应装置，所述气相反应装置中设置有承载盘，所述气体输送组件包括位于所述气体输送组 件中间区域的内部气体输送组件和环绕所述中间区域的外围气体输送组件；其中，
所述外围气体输送组件包括若干管状通道及至少一个环形沟槽，所述环形沟槽与所述管状通道连通用以配合所述管状通道内的气体流出，所述环形沟槽的开口侧为面向所述承载盘的出气侧；
定义一与所述出气侧所在的面垂直且经过所述气体输送组件出气面的几何中心的主轴线，定义每个所述管状通道的管轴在所述管状通道与所述环形沟槽连接处的端点为O点，经过所述O点的关于所述主轴线的切平面为该管状通道的O点所在切平面，至少部分所述管状通道的管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间具有角所述角不为0，使得从所述外围气体输送组件流出的气体形成旋转气流，且所述旋转气流的旋转方向与所述承载盘在反应过程中的旋转方向一致。
可选地，所述环形沟槽为锥形槽、梯形槽、矩形槽、弧形槽及多边形槽中的任意一种。
可选地，所述外围气体输送组件包括一个环形沟槽，所述管状通道沿至少一个同心环形区域分布，所述管状通道与所述环形沟槽对应连通。
可选地，所述外围气体输送组件包括多个同心环形沟槽，所述管状通道沿多个同心环形区域分布，所述同心环形沟槽的数量小于或等于所述同心环形区域的数量，多个所述同心环形沟槽中的每一个与多个所述同心环形区域中的至少一个对应设置，使得每一个同心环形沟槽与对应的同心环形区域中的所述管状通道连通。
可选地，各个所述同心环形区域中的管状通道数量相同，或者最外侧环形区域中的管状通道数量大于最内侧环形区域中的管状通道数量，或者多个所述同心环形区域中的管状通道数量由最内侧环形区域至最外侧环形区域逐渐增加。
可选地，各个所述同心环形沟槽的开口宽度相同，或者最外侧环形沟槽的开口宽度大于最内侧环形沟槽的开口宽度，或者各个所述同心环形沟槽的开口宽度由最内侧环形沟槽至最外侧环形沟槽逐渐增加；或者最外侧环形沟槽的开口面积大于最内侧环形沟槽的开口面积，或者各个所述同心环形沟槽的开口面积由最内侧环形沟槽至最外侧环形沟槽逐渐增加。
可选地，至少部分所述管状通道的管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角相同。
可选地，多个所述同心环形沟槽与多个所述同心环形区域一一对应，同一同心环形区域中所述管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角相同。
可选地，最外侧环形区域中所述管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角不小于最内侧环形区域中所述管轴在其对应的所述O点所在切平面上的投影 与所述主轴线之间的角或者自多个所述同心环形区域的最内侧环形区域至最外侧环形区域，所述管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角逐渐增加。
可选地，定义过任一O点与主轴线平行的直线为O点的轴向线OO'，同时通过所述主轴线和所述轴向线OO'的平面为P0面，所述管轴所在的垂面为所述管轴与所述轴向线OO'张成的平面；其中，至少部分所述管状通道的管轴所在的垂面与所述O点所在的切平面之间具有角θ；
所述环形沟槽与所述出气侧所在的面形成第一交线和第二交线，其中，所述第一交线与所述P0面具有第一交点M点，所述第二交线与所述P0面具有第二交点N点，OM与ON之间形成角γ，所述角γ的角平分线为OQ，OQ与轴向线OO'之间形成角δ；其中所述角δ与所述角θ至少一个不为0。
可选地，所述角平分线OQ靠近所述承载盘的一端与所述管轴靠近所述承载盘的一端均以相同的方向朝远离或靠近所述主轴线的方向偏斜，并且所述角δ与所述角θ的大小相同。
可选地，所述外围气体输送组件输送的气体来自同一供气端，并使得所述外围气体输送组件输送的气体被统一调控。
可选地，所述气相反应装置包括至少一个隔离件，所述隔离件将所述外围气体输送组件分隔成相互独立的多个子区域，至少两个所述子区域中输送的气体被独立调控。
可选地，所述多个子区域为多个同心环形区域，最外侧子区域中通入气体的流量不小于最内侧子区域中通入气体的流量，和/或最外侧子区域中通入气体的平均分子量不小于最内侧子区域中通入气体的平均分子量。
可选地，所述多个子区域为多个同心环形区域，自最内侧子区域至最外侧子区域，通入气体的流量逐渐增大，和/或通入气体的平均分子量逐渐增大。
可选地，所述外围气体输送组件覆盖所述承载盘的边缘，且覆盖面积不超过所述承载盘面积的36％。
可选地，所述外围气体输送组件位于所述承载盘的外侧。
可选地，所述内部气体输送组件输送的气体为反应源气体和载气，用于反应生成目标产物，所述外围气体输送组件输送的气体为吹扫气体、载气、反应源气体中的一种或多种，所述外围气体输送组件输送的气体相互之间不发生反应，或者所述外围气体输送组件输送的气体相互之间反应但不生成所述目标产物。
第二方面，本发明提供一种气相反应装置，其包括：
反应腔室；
承载盘，设置在所述反应腔室中，所述承载盘在反应过程中的旋转速度≥200RPM；
气体输送组件，与所述承载盘相对设置，所述气体输送组件为第一方面中所述的气体输送组件。
如上所述，本发明的气体输送组件及气相反应装置，具有以下有益效果：
本发明的气体输送组件包括位于气体输送组件中间区域的内部气体输送组件和环绕中间区域的外围气体输送组件；外围气体输送组件包括若干管状通道及至少一个环形沟槽，环形沟槽与管状通道连通用以配合管状通道内的气体流出，至少部分管状通道的管轴在管状通道与环形沟槽连接处的端点O点所在切平面上的投影与气体输送组件的主轴线之间具有角不为0，使得从外围气体输送组件流出的气体形成旋转气流，且旋转气流的旋转方向与承载盘在反应过程中的旋转方向一致。该旋转气流具有切向的速度和动量，使得反应腔室内中间流场气流与边缘流场气流的相对速度减小，因此使得反应腔室内的流场在边缘区域的流动撞击混合及流线转向过程更平稳，由此抑制或完全消除反应腔室内涡流的产生，使得反应腔流场的层流特性更加稳定。同时也扩大了整体工艺参数，例如反应腔室的工艺总气量、反应腔室的压力、承载盘转速等的可使用范围。上述工艺参数的可使用范围的扩大能够进一步地帮助提高载气和源物料气体的利用率，因此能够有效降低材料生长的成本。同时还能够减少反应腔中承载盘上的生长材料中出现的颗粒缺陷，提高产品的良率。对于承载盘高转速旋转(转速在200RPM以上)的情况，上述效果尤为明显。
具有上述气体输送组件的气相反应装置能够减少、抑制气流涡旋的产生，获得均匀稳定的气体流场，从而扩大工艺参数的可设置范围，帮助提高载气和源物料气体的利用率，因此能够有效降低材料生长的成本。
附图说明
图1显示为本发明实施例一提供的气体输送组件所在的气相反应装置的反应腔室的主视剖面示意图。
图2显示为图1中的气体输送组件的仰视示意图。
图3显示为一可选实施例中气体输送组件的仰视示意图。
图4显示为图1所示的气体输送组件的外围气体输送组件的俯视视角的立体结构示意图。
图5显示为外围气体输送组件沿图4所示的径向L0-L0的剖视示意图，并以俯视视角示出了外围气体输送组件的立体透视结构。
图6显示为图1所示的气体输送组件的外围气体输送组件的仰视示意图。
图7显示为沿图6中的线H-H的侧视剖面示意图。
图8显示为沿图6中的线K-K的主视剖面示意图。
图9显示为本发明的实施例二提供的气体输送组件的外围气体输送组件的仰视结构示意图，其中，采用局部透视的方式显示了外围气体输送组件中的管状通道。
图10显示为图9中P部分的局部放大示意图。
图11显示为外围气体输送组件沿图9所示的线C-C的正视剖面示意图。
图12显示为沿图9所示的外围气体输送组件径向剖视示意图，并以俯视视角示出了外围气体输送组件的立体透视结构。
图13显示为本发明的实施例五提供的气体输送组件的外围气体输送组件的俯视视角的立体结构示意图。
元件标号说明
100                  气体输送组件      1024           第一侧
101                  内部气体输送组件  1025           第二侧
1010                 第一气体输送通道  1027(1027')    环形沟槽
1010-1               第一缝隙          10271(10271')  第一同心环形沟
                                                      槽
1010-2               第二缝隙          10272(10272')  第二同心环形沟
                                                      槽
102(102')(102”)     外围气体输送组件  10273(10273')  第三同心环形沟
                                                      槽
1020(1020')(1020”)  第二气体输送通道  103            隔离件
1020-1(1020'-1)      管状通道          200            反应腔室
1021                 第一子区域        201            承载盘
1022                 第二子区域        300            供气端
1023                 第三子区域        301            供气管路
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
实施例一
本实施例提供一种气体输送组件，该气体输送组件用于气相反应装置，如图1所示，该气相反应装置包括反应腔室200，反应腔室200中设置有承载盘201，气体输送组件100与承载盘201相对设置，用于将反应气体输送到反应腔室200中。该气相反应装置例如可以是气相沉积装置，具体地，可以是化学气相沉积装置、物理气相沉积装置、等离子体增强气相沉积装置、金属有机物化学气相沉积(MOCVD)装置等。本实施例以MOCVD装置的气体输送组件为例进行说明。应该理解的是该装置仅仅是示例性的，本发明并不限于这一种装置。
如图1所示，本实施例的气相反应装置具有一反应腔室200，气相反应装置的反应腔室200的横截面一般为圆形或者类圆形结构，或者可以是矩形结构及其他本领域技术人员所公知的结构，在此不作赘述。反应腔室200可以是垂直方向进气的垂直流腔室，也可以是中心进气的水平流腔室。反应腔室200可以是气体输送组件100与承载盘201相对设置，且气体输送组件100位于上部、承载盘201位于下部的正置式腔室，也可以是气体输送组件100与承载盘201相对设置，且承载盘201位于上部、气体输送组件100位于下部的倒置式腔室。为了便于描述，本实施例以图1所示的反应腔室200的横截面为圆形，且气体输送组件100位于上部、承载盘201位于下部的正置式垂直流腔室为例对气体输送组件100进行说明。
参照图1，反应腔室200中设置有用于承载待处理基片的承载盘201，承载盘201在气相沉积期间绕旋转轴线A旋转。气体输送组件100与承载盘201相对设置，气体输送组件100例如设置在反应腔室200的顶部，向反应腔室200内注入气体，承载盘201位于气体输送组件100的下方。本实施例提供的气体输送组件100整体上呈现圆盘状结构，包括输送第一气体的内部气体输送组件101以及输送第二气体的外围气体输送组件102。其中内部气体输送组件101位于气体输送组件100的中间区域，外围气体输送组件102位于气体输送组件100的外围区域，并且环绕内部气体输送组件101设置。同样参照图1，该气相反应装置还包括供气端300和供气管路301，供气端300通过供气管路301与内部气体输送组件101和外围气体输送组件102连接，用于向内部气体输送组件101供应第一气体，向外围气体输送组件102供应第二气体。优选地，在气相反应期间，第二气体的平均分子量大于等于第一气体的平均分子量。
同样参照图1所示，外围气体输送组件102具有相对设置的第一侧1024和第二侧1025，该第一侧1024为面向承载盘201的出气面。同样地，内部气体输送组件101也同样具有面向承载盘201的出气面。定义一主轴线B，该主轴线B与第一侧1024所在面(可以等效为圆盘状气体输送组件100的出气面)垂直且经过气体输送组件100的出气面的几何中心，主轴线B与承载盘201的旋转轴线A可以平行，也可以不平行，优选地，主轴线B与承载盘201的 旋转轴线A平行，优选地，主轴线B与旋转轴线A重合。
如图2所示，示出了气体输送组件100的仰视示意图。应该理解的是，在本发明中，所说的“仰视”为沿着第一侧1024向第二侧1025方向观察的视图方向，“俯视”为沿着第二侧1025向第一侧1024方向观察的视图方向。
如图2所示，内部气体输送组件101包括若干第一气体输送通道1010，该第一气体输送通道1010分布在内部气体输送组件101中。在该实施例中，第一气体输送通道1010设置为多条缝隙状通道，该多条缝隙状通道沿同一方向延伸。在气相反应期间，第一气体为反应源气体和载气。示例性地，对于III-V族MOCVD而言，第一气体为III族金属有机源气体、V族氢化物源气体和载气。第一气体输送通道1010包括第一缝隙1010-1和第二缝隙1010-2，第一缝隙1010-1用于将III族金属有机源气体和载气输送至气相反应区域，第二缝隙1010-2用于将V族氢化物源气体和载气输送至气相反应区域，从而提供III族金属有机源气体和V族氢化物源气体在待处理基片上发生反应生成III-V族化合物。
优选的，第一缝隙1010-1和第二缝隙1010-2交替排布在内部气体输送组件101中。优选的，交替排布的第一缝隙1010-1和第二缝隙1010-2之间还包括第三缝隙(未图示)，不含反应气体且不与反应气体反应的载气(或吹扫气体)由第三缝隙中流出。
在本实施例的另一可选实施例中，如图3所示，第一气体输送通道1010为孔型结构，例如可以是圆形孔、椭圆形孔、菱形孔等类似孔结构。这些孔可排布为同心圆环区域，或是条状间隔分布区域，或是几组孔交错分布，或是若干扇形区域等，本领域技术人员可以根据实际的工艺需求自行调整孔分布的形状、位置关系等，在此不作限定。
在本实施例的另一可选实施例中，第一气体输送通道1010还可以是缝隙状通道和孔型结构的组合，其中缝隙通道和孔型结构的分布、形状及位置关系，同样可以根据实际的工艺需要进行调整。
在本实施例中，自第一气体输送通道1010喷出的第一气体形成的气流方向与主轴线B平行，即第一气体输送通道1010为垂直气流通道，形成的气流方向垂直朝向承载盘201。
本实施例中，外围气体输送组件102包括第二气体输送通道1020，用于输送第二气体，该第二气体可以是吹扫气体、载气、反应源气体中的一种或多种，优选地，当第二气体含至少两种气体，不同气体相互之间不发生反应或者相互之间反应但不生成目标产物。如果外围气体输送组件102通入参与反应的全部反应源，会造成不必要的生长(如反应生成的III-V族化合物在器壁上沉积)，而且浪费源气体，降低设备的维护周期，另外，还会有部分反应源进入内部气相反应区域，影响生长材料的均匀性。本实施例中第二气体输送通道1020通入的第 二气体含至少两种气体且不同气体相互之间不发生反应，因此能够有效避免上述问题，提高生长材料的均匀性。示例性地，对于III-V族MOCVD而言，第二气体可为V族氢化物源气体和载气组成，也可由V族氢化物源气体和吹扫气体组成。
如图4至图8所示，第二气体输送通道1020包括若干管状通道1020-1以及至少一个环形沟槽1027，其中，至少一个环形沟槽1027与多个管状通道1020-1连通以配合管状通道1020-1内的气体流出，环形沟槽1027的开口侧(即，远离管状通道的一侧)为面向承载盘201的出气侧。该环形沟槽1027可以是锥形槽、梯形槽、矩形槽、弧形槽及多边形槽中的任意一种，即环形沟槽1027在外围输送组件102的厚度方向上的截面形状为锥形、梯形、矩形、弧形及多边形中的任意一种。优选地，同一外围气体输送组件102中各环形沟槽1027为相同截面形状的沟槽。如图5所示，管状通道1020-1自外围气体输送组件102的第二侧1025向第一侧1024延伸。
如图4所示，若干管状通道1020-1可以以任意方式分布在外围气体输送组件102中，例如可以呈环形分布或者呈扇环形分布。优选地，管状通道1020-1呈环形分布，更优选地，可以沿多个同心环形区域分布。各个同心环形区域中的管状通道1020-1数量相同；或者，最外侧环形区域中的管状通道1020-1的数量大于最内侧环形区域中的管状通道1020-1的数量；或者，自多个同心环形区域的最内侧环形区域至最外侧环形区域，管状通道1020-1数量逐渐增加；或者自多个同心环形区域的最内侧环形区域至最外侧环形区域，管状通道1020-1数量逐渐增加，且其中至少两个相邻的环形区域中的管状通道1020-1数量相同。具体数量分布依据工艺需求而定。示例性地，如图4所示，多个管状通道1020-1沿三个同心环形区域分布，即分别沿内侧环形区域、中间环形区域及外侧环形区域分布，上述各区域分别对应的管状通道1020-1数量为N1、N2、N3，其中，N1＝N2＝N3；或者N3＞N1，N1≤N2≤N3。
环形沟槽1027的数量可以是一个，也可以如图5所示包含多个同心环形沟槽。
当环形沟槽1027的数量为一个时，该环形沟槽1027与外围气体输送组件102中的所有管状通道1020-1连通，管状通道1020-1可呈一个环形区域分布，也可沿多个同心环形区域分布。
优选地，环形沟槽1027包含多个同心环形沟槽，如图5所示，环形沟槽1027包括第一同心环形沟槽10271、第二同心环形沟槽10272和第三同心环形沟槽10273。管状通道1020-1的数量是多个并沿多个同心环形区域分布，环形沟槽1027中的每一个同心环形沟槽与至少一个同心环形区域对应设置，使得每一个同心环形沟槽1027与对应的同心环形区域中的管状通道1020-1连通。在可选实施例中，环形沟槽1027的同心环形沟槽数量与同心环形区域的数 量相同，环形沟槽1027中的每一个同心环形沟槽均与一个同心环形区域对应设置，即，同心环形沟槽与环形区域一一对应，每一个同心环形沟槽均与与其对应的同心环形区域上分布的管状通道1020-1连通，与每一个环形沟槽1027对应的每一个同心环形区域上分布的管状通道1020-1呈至少一个环形分布。在其他可选实施例中，环形沟槽1027的同心环形沟槽的数量与同心环形区域的数量也可以不同，例如环形沟槽1027的同心环形沟槽的数量为多个且小于同心环形区域的数量，环形沟槽1027中的每一个同心环形沟槽与多个同心环形区域中的至少一个对应设置，使得每一个同心环形沟槽与对应的同心环形区域中的管状通道连通，例如，多个同心环形区域中至少有两个相邻的同心环形区域与环形沟槽1027中的一个同心环形沟槽相对应连通，其余同心环形区域与其余的同心环形沟槽一一对应连通。
优选地，各个同心环形沟槽的开口宽度相同，或者最外侧环形沟槽的开口宽度大于最内侧环形沟槽的开口宽度；或者各个同心环形沟槽的开口宽度由最内侧环形沟槽至最外侧环形沟槽逐渐增加；或者各个同心环形沟槽的开口宽度由最内侧环形沟槽至最外侧环形沟槽逐渐增加，且其中至少两个相邻的环形沟槽的开口宽度相同；或者最外侧环形沟槽的开口面积大于最内侧环形沟槽的开口面积，或者各个同心环形沟槽的开口面积由最内侧环形沟槽至最外侧环形沟槽逐渐增加；或者各个同心环形沟槽的开口面积由最内侧环形沟槽至最外侧环形沟槽逐渐增加，且其中至少两个相邻的环形沟槽的开口面积相同。具体结构依据工艺需求而定。
如图5和图8所示，可选实施例中，多个管状通道1020-1沿三个同心环形区域分布，环形沟槽1027由内至外包括三个同心环形沟槽，即第一同心环形沟槽10271、第二同心环形沟槽10272及第三同心环形沟槽10273。上述第一同心环形沟槽10271、第二同心环形沟槽10272及第三同心环形沟槽10273与三个同心环形区域中一一对应，并分别与同心环形区域中的管状通道1020-1相连通。同心环形沟槽1027由内至外如图8所示的自第一环形沟槽10271至第三环形沟槽10273所分别对应的沟槽开口宽度为d1、d2、d3。沟槽开口宽度d1、d2、d3分别对应的沟槽开口面积为S1、S2、S3。各同心环形沟槽的开口宽度相同，例如图8中d1＝d2＝d3；或者d3＞d1，d1≤d2≤d3；或者S3＞S1，S1≤S2≤S3。
定义：每个管状通道1020-1的管轴在所述管状通道与所述环形沟槽1027连接处的端点为O点，经过所述O点的关于主轴线B的切平面为该管状通道的O点所在切平面，在本实施例中，至少部分所述管状通道的管轴在其对应的O点所在切平面上的投影与主轴线B之间具有角所述角不为0，从而使得从所述外围气体输送组件102流出的气体形成旋转气流，所述旋转气流的速度包括轴向分量和切向分量，且所述旋转气流的旋转方向与承载盘201在反应过程中的旋转方向一致。
为了便于理解，本实施例以管状通道1020-1的管轴位于该管状通道的O点所在切平面上为例，结合图6及图7所示，图7显示为沿图6中的线H-H的侧视剖面图，过线H-H的剖面即为图6中中间一个管状通道1020-1的O点所在切平面。
如图7所示，在本实施例中，定义管状通道1020-1的管轴在管状通道1020-1与环形沟槽1027连接处的端点为O点(即所述管轴的下端点)，管轴位于外围气体输送组件102的第二侧1025的一端的几何中心为O1点(即所述管轴的上端点)，管状通道1020-1的管轴即为OO1，经过O点的关于主轴线B的切平面为该管状通道1020-1的O点所在切平面。此情形下，管状通道1020-1的管轴OO1在其O点所在切平面上的投影即为管轴OO1本身，此时，至少部分管状通道1020-1的管轴OO1与气体输送组件100的主轴线B(可参考图7所示的与主轴线B平行的直线O1B')之间具有角角不为0。即，至少部分管状通道1020-1相对于主轴线B是倾斜的。可选地，外围气体输送组件102中的管状通道1020-1可以全部是相对主轴线B倾斜的；也可以是部分是与主轴线B相互平行的，部分是相对主轴线B倾斜的。相对主轴线B倾斜的管状通道1020-1使得从外围气体输送组件102流出的气体形成旋转气流，并且该旋转气流的旋转方向与承载盘201在反应过程中的旋转方向一致。
对于管状通道1020-1的管轴不位于其O点所在切平面上的情形，不难理解，只要部分管状通道1020-1的管轴在其O点所在切平面上的投影与主轴线B之间存在角度，就可以使从第二气体输送通道1020喷出的气体的气流速度包括轴向分量和切向分量，从而形成旋转气流。
一般而言，越大，切向分量与轴向分量的比例越大，旋转气流的旋转特性更明显。但旋转气流的气流速度的切向分量与轴向分量的比例不宜过大，否则会对内部区域气流造成较大影响，不利于均衡注入反应腔室200的气体。优选地，
供气端300提供的第二气体通过供气管路301和第二气体输送通道1020流至反应腔室200内，第二气体输送通道1020的至少部分管状通道1020-1及环形沟槽1027的设置使得当气体从环形沟槽1027喷出时形成旋转气流，旋转气流的方向与承载盘201在反应过程中的旋转方向一致。由于承载盘201在反应过程中是旋转的，因此承载盘201边缘的气流由于承载盘的拖拽会存在一个切向速度(尤其是对于高速旋转(转速在200RPM以上)的承载盘而言，切向速度更大)，其与来流(一般为轴向的来流)会产生碰撞并混合，从而在承载盘201边缘来流方向产生涡流。使旋转气流的方向与承载盘201在反应过程中的旋转方向一致，边缘来流由轴向来流变为了带有同方向切向速度的来流，使得反应腔室200内边缘流场气流的相对速度减小，因此使得反应腔室200内的流场在边缘区域的流动撞击混合及流线转向过程更平稳，由此抑制或完全消除反应腔室200内涡流的产生，使得反应腔室200中流场的层流特性 更加稳定。如果使旋转气流的方向与承载盘201的旋转方向不一致，承载盘201边缘的气流与来流的相对速度变大，会加剧涡流。
在可选的实施例中，上述外围气体输送组件102位于承载盘201的外侧。在另一可选实施例中，由于采取上述可产生旋转气流的第二气体输送通道1020，可使外围气体输送组件102覆盖承载盘201的边缘，并且覆盖面积不超过承载盘201面积的36％(即沿承载盘201径向上未被覆盖区域的半径大于等于承载盘半径的80％)。外围气体输送组件102的底面朝向承载盘201顶表面所在平面投影形成外围气体输送组件102的底面投影，该底面投影的边缘所围区域与承载盘201的顶表面(即朝向外围气体输送组件102的一面)之间所具有的重叠区域定义为承载盘201径向上被覆盖区域，承载盘201的顶表面除该被覆盖区域以外的其他区域为前述的“沿承载盘201径向上未被覆盖区域”。该“沿承载盘201径向上未被覆盖区域”可呈圆形或类圆形，该“沿承载盘201径向上未被覆盖区域”的半径可指等效半径。可选地，外围气体输送组件102的底面投影为外围气体输送组件102的底面朝向承载盘201顶表面所在平面的正投影。相对于现有技术而言，在保证承载盘201上有效生长区域生长均匀性的前提下，由于可以通过外围气体输送组件102输送反应源气体，外围气体输送组件102覆盖承载盘201的面积有所增加，可以减少反应源气体浪费，进一步提高反应源使用效率。
本实施例中，相对主轴线B倾斜的管状通道1020-1中，至少部分管状通道1020-1的管轴在其O点所在切平面上的投影与主轴线B之间的角是相同的。当外围气体输送组件102包括多个同心环形沟槽1027，管状通道1020-1沿多个同心环形区域分布，且多个同心环形沟槽与多个同心环形区域一一对应时，优选地，沿同一个同心环形区域分布的管状通道1020-1的管轴在其O点所在切平面上的投影与主轴线B之间的角相同。优选地，各同心环形区域分布的管状通道1020-1的管轴在其O点所在切平面上的投影与主轴线B之间的角均相同。优选地，最外侧环形区域中的管状通道1020-1的管轴在其O点所在切平面上的投影与主轴线B之间的角不小于最内侧环形区域中的管状通道1020-1的管轴在其O点所在切平面上的投影与主轴线B之间的角优选地，自多个同心环形区域的最内侧环形区域至最外侧环形区域，管状通道1020-1的管轴在其O点所在切平面上的投影与主轴线B之间的逐渐增加，或者角逐渐增加且其中至少两个相邻的环形区域中的角相同。示例性地，如图4所示，多个管状通道1020-1沿三个同心环形区域分布，即沿内侧环形区域、中间环形区域及外侧环形区域分布，对应的管状通道1020-1的管轴在其O点所在切平面上的投影与主轴线B之间的角分别为其中，或者或者可以根据不同的反应腔室和工艺需求，对管状通道1020-1的具体结构(例如角)进行设计， 从而使承载盘201边缘附近气体流场中的涡流最小化。
以上仅以气体输送组件位于上部、承载盘位于下部的正置式垂直流腔室为例对气体输送组件进行了说明，应该理解的是在任意类型的反应腔室中，只要可能因为承载盘旋转而产生涡旋的反应腔室中，均可采用本发明提供的气体输送组件以抑制或完全消除涡旋，均衡气流。
实施例二
本实施例同样提供一种气体输送组件，该气体输送组件用于气相反应装置，例如可以用于气相沉积装置。同样如图1所示，该气相反应装置包括反应腔室200，反应腔室200中设置有承载盘201，气体输送组件100与承载盘201相对设置，用于将反应气体输送到反应腔室200中。本实施例的气体输送组件与实施例一提供的气体输送组件的相同之处不再赘述，不同之处体现在本实施例的气体输送组件100的外围气体输送组件，因此，在本实施例中，如图9所示，仅示出了其中的外围气体输送组件102'，该外围气体输送组件102'同样分布有若干个第二气体输送通道1020'。参照图9至图12，该第二气体输送通道1020'同样包括若干管状通道1020'-1及环形沟槽1027'。至少部分管状通道1020'-1的管轴在其O点所在切平面上的投影与主轴线B之间具有角角不为0。此外，第二气体输送通道1020'还具有以下特征。
如图10，示出了图9中P部分的局部放大图。其中至少部分管状通道1020'-1的管轴OO1所在的垂面与O点所在的切平面之间具有角θ，其中O点为管状通道1020'-1的管轴在管状通道1020'-1与环形沟槽1027'连接处的端点(即管轴的下端点)，O1点为管状通道1020'-1的管轴的另一端点，位于外围气体输送组件102'的第二侧1025的一端的几何中心(即管轴的上端点)，过O点且平行于主轴线B的直线为O点的轴向线OO'。管状通道1020'-1的管轴OO1所在的垂面为管轴OO1与轴向线OO'张成的平面；经过O点的关于主轴线B的切平面为该管状通道1020-1的O点所在切平面，也即O点的切向线(在O点关于主轴线B的切向线)与轴向线OO'张成的平面。
参照图11，同时参照图12，环形沟槽1027'与出气侧所在的面形成第一交线L1和第二交线L2。以图12中的第三同心环形沟槽10273'为例，该第三同心环形沟槽10273'与出气侧所在的面形成第一交线L1和第二交线L2，同时通过主轴线B和轴向线OO'的平面为P0面(例如图11所示的外围气体输送组件102'沿图9中C-C线的剖面)。其中，第一交线L1与P0面具有第一交点M点，第二交线L2与P0面具有第二交点N点，OM与ON之间形成角γ。角γ的角平分线为OQ，OQ与轴向线OO'之间形成角δ，其中，角δ及角θ中至少一个不为0。其中，OM与OO'之间形成角γi，ON与OO'之间形成角γo，δ的大小即为角γi与角γo之间 的差值Δγ的一半。优选地，角δ与角θ的大小相同，管状通道1020'-1和环形沟槽1027'相对于O点所在的切平面均是偏斜的，且二者的偏斜方向一致，即，角平分线OQ靠近承载盘201的一端与管轴靠近承载盘201的一端均以相同的方向朝远离或靠近主轴线的方向偏斜，例如，二者均以相同的方向朝远离主轴线B的方向偏斜。特别地，当δ＝0，且θ＝0时，即为实施例一中图5所示的结构(其管状通道的管轴及环形沟槽的角平分线均位于O点所在切平面上的情形，喷出气体的气流速度仅包括切向分量和轴向分量)。
由本实施例的上述倾斜的管状通道1020'-1和环形沟槽1027'注入的气体的气流速度不仅包括轴向分量和切向分量，还包括径向分量，对于不同构造比例和使用场景的反应腔室，引入上述气流速度包含径向分量的气流可以进一步减小涡流。优选地，当第二气体输送通道包括的环形沟槽1027'具有多个同心环形沟槽(例如图12所示的第一同心环形沟槽10271'、第二同心环形沟槽10272'和第三同心环形沟槽10273')时，使喷出气流的速度包括径向分量的第二气体输送通道不位于最靠近中间区域的环形沟槽1027'(即第一同心环形沟槽10271')及第一同心环形沟槽10271'对应的管状通道1020'-1所在区域。
实施例三
本实施例同样提供一种气体输送组件，该气体输送组件用于气相反应装置，例如可以用于气相沉积装置。同样如图1所示，该气相反应装置包括反应腔室200，反应腔室200中设置有承载盘201，气体输送组件100与承载盘201相对设置，用于将反应气体输送到反应腔室200中。本实施例中，气体输送组件100中的外围气体输送组件102包括若干第二气体输送通道1020，第二气体输送通道1020同样包括若干管状通道和至少一个环形沟槽，该管状通道和环形沟槽可以全部是实施例一的管状通道1020-1及环形沟槽1027；也可以全部是实施例二的管状通道1020'-1及环形沟槽1027'；还可以是与主轴线B平行的管状通道1020-1和实施例一的管状通道1020-1及环形沟槽1027的组合，也可以是与主轴线B平行的管状通道1020-1和实施例二的管状通道1020'-1及环形沟槽1027'，还可以是与主轴线B平行的管状通道1020-1、实施例一的管状通道1020-1及环形沟槽1027和实施例二的管状通道1020'-1及环形沟槽1027'的组合。第二气体输送通道的具体类型，可以依照不同的气相反应装置、使用场景和工艺需求而定。
实施例四
本实施例同样提供一种气体输送组件，该气体输送组件用于气相反应装置，例如可以用于气相沉积装置，同样如图1所示，该气相反应装置包括反应腔室200，反应腔室200中设置有承载盘201，气体输送组件100与承载盘201相对设置，用于将反应气体输送到反应腔 室200中。本实施例的气体输送组件中的外围气体输送组件102包括若干第二气体输送通道1020，该第二气体输送通道1020的结构可以为实施例一至三中的任意一种，第二气体输送通道1020中管状通道1020-1的分布方式与实施例一相同。
本实施例中，外围气体输送组件102输送的第二气体来自同一供气端，并使得外围气体输送组件102输送的气体被统一调控。
如图1所示，位于气体输送组件100的外围区域的外围气体输送组件102由供气端300通入同一种气体，因此由第二气体输送通道1020中的环形沟槽1027输送至反应腔室200中的第二气体的种类和组分均相同。需指出的是，上述同一种气体并非指单一气体种类，而是指由第二气体输送通道1020输送至反应腔室200中的气体相同，其可以是单一气体，也可以是混合气体。示例性地，对于III-V族MOCVD而言，第二气体可为V族氢化物源气体和载气、或吹扫气体。
在供气端300和外围气体输送组件102之间还设有控制单元(未图示)，如阀门、质量流量控制器、压力控制器等，控制单元对外围气体输送组件102的气体进行统一调控，由此使得外围气体输送组件102中输送的气体的种类和组分均相同。
实施例五
本实施例同样提供一种气体输送组件，其与实施例四的差别在于：实施例四中外围气体输送组件102输送的第二气体来自同一供气端300，并使得外围气体输送组件102输送的气体被统一调控，而本实施例中外围气体输送组件被分隔成相互独立的多个子区域，至少两个子区域中输送的第二气体被独立调控。
如图13所示，仅示出了其中的外围气体输送组件102”的俯视视角的结构示意图，该外围气体输送组件102”同样分布有若干个第二气体输送通道1020”。本实施例的外围气体输送组件102”被至少一个隔离件103分隔成相互独立的多个子区域。
可选实施例中，反应腔室200设有顶板(未图示)，该顶板覆于外围气体输送组件102”的第二侧1025，顶板上设有若干隔离件103，隔离件103可以为自顶板向外围气体输送组件102”的第二侧1025方向凸出的棱，隔离件103位于外围气体输送组件102”的第二侧1025和顶板之间。当顶板覆盖安装于外围气体输送组件102”的第二侧1025上时，隔离件103将外围气体输送组件102”中的第二气体输送通道1020”划分在多个子区域中。
可选实施例中，如图13所示，隔离件103可以形成为由外围气体输送组件102”的第二侧1025向顶板方向凸出的棱。隔离件103位于外围气体输送组件102”的第二侧1025和顶板之间。当顶板覆盖安装于外围气体输送组件102”的第二侧1025上时，隔离件103将外围气体输 送组件102”中的第二气体输送通道1020”划分在多个子区域中。
如图13所示，隔离件103可以沿外围气体输送组件102”的周向以圆周形式分布，将外围气体输送组件102”划分为至少两个同心环形的子区域，优选地，每一子区域包含一个环形沟槽。优选地，调节最外侧子区域中通入气体的流量不小于最内侧子区域中通入气体的流量；或调节最外侧子区域中通入气体的平均分子量不小于最内侧子区域中通入气体的平均分子量；或调节最外侧子区域中通入气体的流量不小于最内侧子区域中通入气体的流量，且最外侧子区域中通入气体的平均分子量不小于最内侧子区域中通入气体的平均分子量。优选地，自最内侧子区域至最外侧子区域，调节通入气体的流量逐渐增大；或调节通入气体的平均分子量逐渐增大；或调节通入气体的流量及平均分子量均逐渐增大。优选地，自最内侧子区域至最外侧子区域，调节通入气体的流量逐渐增大且其中至少两个相邻的子区域中的气体的流量相同；或调节通入气体的平均分子量逐渐增大且其中至少两个相邻的子区域中的气体的平均分子量相同；或调节通入气体的流量及平均分子量均逐渐增大，且其中至少两个相邻的子区域中的气体的流量相同且气体的平均分子量相同。
或者隔离件103沿气体输送组件100的中心至边缘的方向延伸形成在外围气体输送组件102”中，将外围气体输送组件102”划分为至少两个扇环形的子区域，优选地，至少两个扇环形的子区域的面积相同。
本实施例中，以圆形的反应腔室200中的圆盘形的气体输送组件100为例，隔离件103沿外围气体输送组件102”的周向以圆周形式分布为例，如图13所示，以具有两条隔离件103为例，这两条隔离件103与外围气体输送组件102”的侧壁将外围气体输送组件102”划分为三个子区域：位于径向最内侧的第一子区域1021、位于第一子区域1021外侧的第二子区域1022以及位于径向最外侧的第三子区域1023，并分别对应如图12所示的第一同心环形沟槽10271'、第二同心环形沟槽10272'、第三同心环形沟槽10273'。在可选实施例中，上述第一子区域1021、第二子区域1022及第三子区域1023分别与独立的供气端300连通。示例性地，供气端300包括若干个不同气体源，各子区域分别与若干个不同气体源连接，气体源与各子区域之间设有控制单元(未图示)，如阀门、质量流量控制器、压力控制器等，控制单元分别单独控制进入各子区域中的气体，使通入第一子区域1021、第二子区域1022及第三子区域1023的气体的组成以及流量等参数可以相同也可以不同，并且上述各参数是可以分别独立控制的，由此可以单独控制通入第一子区域1021、第二子区域1022及第三子区域1023的气体的流量或者组分等。由此增加了通过外围气体输送组件102”通入反应腔室200的气体的控制可能性，实现更好的抑制或完全消除反应腔室涡旋气流的效果。
在可选实施例中，上述第一子区域1021与第二子区域1022连接同一气体源，并被同一控制单元调控，第三子区域1023连接另一气体源，被另一控制单元单独调控。另有其他类似组合，只要是使得子区域中的气体可被单独调控，在此不做赘述。
如图13所示，沿径向由内而外的方向，由第一子区域1021、第二子区域1022及第三子区域1023注入的第二气体的流量分别为F1、F2、F3，对应注入的第二气体的平均分子量分别为M1、M2、M3，其中，F1≤F2≤F3，或者，M1≤M2≤M3，或者，F1≤F2≤F3且M1≤M2≤M3。
由于在反应腔室200中，越靠近内部区域，其气流需要通过精细分布来调节和匹配，因此上述子区域的设计能够减少对内部区域气流的影响，由此有利于均衡注入反应腔室200的气体，获得更好的抑制及消除气流涡旋的效果，进而帮助提高气体的利用率。
实施例六
本实施例提供一种气相反应装置，可参照图1，该气相反应装置包括反应腔室200，反应腔室200中设置有承载盘201，承载盘201在反应过程中的旋转速度≥200RPM；以及与承载盘201相对设置的气体输送组件100。本实施例中，气体输送组件100为实施例一至五中的任意一种。该气相反应装置能够减少、抑制气流涡旋的产生，获得均匀稳定的气体流场，从而扩大工艺参数的可设置范围，帮助提高载气和源物料气体的利用率，因此能够有效降低材料生长的成本。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (19)

  1. 一种气体输送组件，用于气相反应装置，所述气相反应装置中设置有承载盘，其特征在于，所述气体输送组件包括位于所述气体输送组件中间区域的内部气体输送组件和环绕所述中间区域的外围气体输送组件；其中，
    所述外围气体输送组件包括若干管状通道及至少一个环形沟槽，所述环形沟槽与所述管状通道连通用以配合所述管状通道内的气体流出，所述环形沟槽的开口侧为面向所述承载盘的出气侧；
    定义一与所述出气侧所在的面垂直且经过所述气体输送组件出气面的几何中心的主轴线，定义每个所述管状通道的管轴在所述管状通道与所述环形沟槽连接处的端点为O点，经过所述O点的关于所述主轴线的切平面为该管状通道的O点所在切平面，至少部分所述管状通道的管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间具有角所述角不为0，使得从所述外围气体输送组件流出的气体形成旋转气流，且所述旋转气流的旋转方向与所述承载盘在反应过程中的旋转方向一致。
  2. 根据权利要求1所述的气体输送组件，其特征在于，所述环形沟槽为锥形槽、梯形槽、矩形槽、弧形槽及多边形槽中的任意一种。
  3. 根据权利要求1所述的气体输送组件，其特征在于，所述外围气体输送组件包括一个环形沟槽，所述管状通道沿至少一个同心环形区域分布，所述管状通道与所述环形沟槽对应连通。
  4. 根据权利要求1所述的气体输送组件，其特征在于，所述外围气体输送组件包括多个同心环形沟槽，所述管状通道沿多个同心环形区域分布，所述同心环形沟槽的数量小于或等于所述同心环形区域的数量，多个所述同心环形沟槽中的每一个与多个所述同心环形区域中的至少一个对应设置，使得每一个同心环形沟槽与对应的同心环形区域中的所述管状通道连通。
  5. 根据权利要求4所述的气体输送组件，其特征在于，各个所述同心环形区域中的管状通道数量相同，或者最外侧环形区域中的管状通道数量大于最内侧环形区域中的管状通道数量，或者多个所述同心环形区域中的管状通道数量由最内侧环形区域至最外侧环形区域逐渐增加。
  6. 根据权利要求4所述的气体输送组件，其特征在于，各个所述同心环形沟槽的开口宽度相同，或者最外侧环形沟槽的开口宽度大于最内侧环形沟槽的开口宽度，或者各个所述同心环形沟槽的开口宽度由最内侧环形沟槽至最外侧环形沟槽逐渐增加；或者最外侧环形沟槽的开口面积大于最内侧环形沟槽的开口面积，或者各个所述同心环形沟槽的开口面积由最内侧环形沟槽至最外侧环形沟槽逐渐增加。
  7. 根据权利要求1所述的气体输送组件，其特征在于，至少部分所述管状通道的管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角相同。
  8. 根据权利要求4所述的气体输送组件，其特征在于，多个所述同心环形沟槽与多个所述同心环形区域一一对应，同一同心环形区域中所述管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角相同。
  9. 根据权利要求8所述的气体输送组件，其特征在于，最外侧环形区域中所述管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角不小于最内侧环形区域中所述管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角或者自多个所述同心环形区域的最内侧环形区域至最外侧环形区域，所述管轴在其对应的所述O点所在切平面上的投影与所述主轴线之间的角逐渐增加。
  10. 根据权利要求1所述的气体输送组件，其特征在于，定义过任一O点与主轴线平行的直线为O点的轴向线OO'，同时通过所述主轴线和所述轴向线OO'的平面为P0面，所述管轴所在的垂面为所述管轴与所述轴向线OO'张成的平面；其中，至少部分所述管状通道的管轴所在的垂面与所述O点所在切平面之间具有角θ；
    所述环形沟槽与所述出气侧所在的面形成第一交线和第二交线，其中，所述第一交线与所述P0面具有第一交点M点，所述第二交线与所述P0面具有第二交点N点，OM与ON之间形成角γ，所述角γ的角平分线为OQ，OQ与轴向线OO'之间形成角δ；其中，所述角δ及所述角θ至少一个不为0。
  11. 根据权利要求10所述的气体输送组件，其特征在于，所述角平分线OQ靠近所述承载盘的一端与所述管轴靠近所述承载盘的一端均以相同的方向朝远离或靠近所述主轴线的方向偏斜，并且所述角δ与所述角θ的大小相同。
  12. 根据权利要求1所述的气体输送组件，其特征在于，所述外围气体输送组件输送的气体来自同一供气端，并使得所述外围气体输送组件输送的气体被统一调控。
  13. 根据权利要求1所述的气体输送组件，其特征在于，所述气相反应装置包括至少一个隔离件，所述隔离件将所述外围气体输送组件分隔成相互独立的多个子区域，至少两个所述子区域中输送的气体被独立调控。
  14. 根据权利要求13所述的气体输送组件，其特征在于，所述多个子区域为多个同心环形区域，最外侧子区域中通入气体的流量不小于最内侧子区域中通入气体的流量，和/或最外侧子区域中通入气体的平均分子量不小于最内侧子区域中通入气体的平均分子量。
  15. 根据权利要求13所述的气体输送组件，其特征在于，所述多个子区域为多个同心环形区域，自最内侧子区域至最外侧子区域，通入气体的流量逐渐增大，和/或通入气体的平均分子量逐渐增大。
  16. 根据权利要求1所述的气体输送组件，其特征在于，所述外围气体输送组件覆盖所述承载盘的边缘，且覆盖面积不超过所述承载盘面积的36％。
  17. 根据权利要求1所述的气体输送组件，其特征在于，所述外围气体输送组件位于所述承载盘的外侧。
  18. 根据权利要求1所述的气体输送组件，其特征在于，所述内部气体输送组件输送的气体为反应源气体和载气，用于反应生成目标产物，所述外围气体输送组件输送的气体为吹扫气体、载气、反应源气体中的一种或多种，所述外围气体输送组件输送的气体相互之间不发生反应，或者所述外围气体输送组件输送的气体相互之间反应但不生成所述目标产物。
  19. 一种气相反应装置，其特征在于，包括：
    反应腔室；
    承载盘，设置在所述反应腔室中，所述承载盘在反应过程中的旋转速度≥200RPM；
    气体输送组件，与所述承载盘相对设置，所述气体输送组件为权利要求1～18中任意一项所述的气体输送组件。
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