JP2023002554A - バッフルを備えたガスインジェクタ - Google Patents
バッフルを備えたガスインジェクタ Download PDFInfo
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- JP2023002554A JP2023002554A JP2022154540A JP2022154540A JP2023002554A JP 2023002554 A JP2023002554 A JP 2023002554A JP 2022154540 A JP2022154540 A JP 2022154540A JP 2022154540 A JP2022154540 A JP 2022154540A JP 2023002554 A JP2023002554 A JP 2023002554A
- Authority
- JP
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- Prior art keywords
- gas injector
- plenum body
- plenum
- nozzles
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000012530 fluid Substances 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 111
- 238000000034 method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- MDBGGTQNNUOQRC-UHFFFAOYSA-N Allidochlor Chemical compound ClCC(=O)N(CC=C)CC=C MDBGGTQNNUOQRC-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
- B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
- B01F23/191—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means characterised by the construction of the controlling means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
- B01J4/002—Nozzle-type elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
- B01J4/005—Feed or outlet devices as such, e.g. feeding tubes provided with baffles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
- B01J4/007—Feed or outlet devices as such, e.g. feeding tubes provided with moving parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/20—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles with liquid as a fluidising medium
- B01J8/22—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles with liquid as a fluidising medium gas being introduced into the liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00796—Details of the reactor or of the particulate material
- B01J2208/00893—Feeding means for the reactants
- B01J2208/00902—Nozzle-type feeding elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00796—Details of the reactor or of the particulate material
- B01J2208/00893—Feeding means for the reactants
- B01J2208/00929—Provided with baffles
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Combustion & Propulsion (AREA)
- Chemical Vapour Deposition (AREA)
- Nozzles (AREA)
- Treating Waste Gases (AREA)
- Percussion Or Vibration Massage (AREA)
- Gas Separation By Absorption (AREA)
Abstract
Description
ガス射出アセンブリ600は、凹部615が本体605の第1の表面625に形成され、複数の孔610が第1の表面625と反対側の出口壁650を通って形成されている、本体605を有する。凹部615は、第1の側壁612と、第1の側壁612と反対側の第2の側壁614とを有する。第1の側壁612、第2の側壁614、及び出口壁616は、本体605を通るガス流のための内部空間618を画定する。本体605は、第1の表面625のガス入口ポート620から第1の側壁612の開口部622まで延びる、本体内部に形成された通路606を有する。通路606は、内部空間618及び孔610と流体連結している。ガス導管680は、ガス入口ポート620に連結されてもよく、ガスを通路606に流入させ、内部空間618を通り、孔610を通ってガス射出アセンブリ600を出る。キャップ690は、第1の表面625上で静止し、凹部615と係合して、内部空間618によって画定されたプレナムを形成する。キャップ690は、キャップ690を第1の表面625で静止できるようにするフランジ部分693と、凹部615に係合するプラグ部分691とを有する。図6Aの実施形態では、第1及び第2の側壁612及び614は、第1の表面625及び出口壁616に実質的に鉛直である。キャップ690のプラグ部分691は、第1の表面625に近接した第1及び第2の側壁612及び614の形状に従う形状を有し、プレスフィットを提供する。
Claims (15)
- プレナム本体
を含むガスインジェクタであって、前記本体が、
凹部と、
前記凹部に隣接し、かつ前記プレナム本体から離れるように横方向に延びる突起部と、
前記プレナム本体の外面から横方向に延びる複数のノズルと
を含み、前記プレナム本体が、前記プレナム本体の外壁に複数の孔を有しており、
各ノズルが、前記プレナム本体の内部空間と流体連結している、ガスインジェクタ。 - 前記ノズルが、前記プレナム本体の両側に配置される、請求項1に記載のガスインジェクタ。
- 前記ノズルが、前記プレナム本体の片側だけに配置される、請求項1に記載のガスインジェクタ。
- 前記ノズルは、サイズが様々である、請求項1に記載のガスインジェクタ。
- 前記ノズルが、様々な異なる高度方向に向かう、請求項1に記載のガスインジェクタ。
- 前記ノズルが、様々な異なる横方向に向かう、請求項1に記載のガスインジェクタ。
- 前記ノズルが、前記プレナム本体に沿って互いに様々な距離で間隔を空けて配置される、請求項1に記載のガスインジェクタ。
- プレナム本体
を含むガスインジェクタであって、前記プレナム本体が、
凹部と、
前記凹部に隣接し、かつ前記プレナム本体から離れるように横方向に延びる突起部と
を含み、前記突起部が、
複数の孔と、
前記複数の孔に隣接したバッフルと
を含み、前記複数の孔が、前記プレナム本体の内部空間と前記バッフルとの間に流体連結をもたらす、ガスインジェクタ。 - 前記バッフルが、第1の延長部分と、前記第1の延長部分に直交する第2の延長部分とを含む、請求項8に記載のガスインジェクタ。
- 前記第1の延長部分が、前記突起部の底面に連結する、請求項9に記載のガスインジェクタ。
- 第2の延長部分が、約0.04インチから約0.05インチまでの距離だけ、前記突起部から間隔を空けて配置される、請求項8に記載のガスインジェクタ。
- 前記複数の孔が、前記突起部の底面に配置され、かつ前記底面の中央に位置する、請求項8に記載のガスインジェクタ。
- 前記プレナム本体が、前記プレナム本体の上面に配置された別の複数の孔を更に含む、請求項8に記載のガスインジェクタ。
- プレナム本体
を含むガスインジェクタであって、前記プレナム本体が、
凹部と、
前記凹部に隣接し、かつ前記プレナム本体から離れるように横方向に延びる突起部と
を含み、前記突起部が、
前記プレナム本体の内部空間を横切って配置され、前記内部空間を前記凹部に隣接した第1の空間と第2の空間とに分離するデバイダであって、前記第1の空間と前記第2の空間との間に流体連結をもたらす複数の孔を有するデバイダと、
前記第2の空間と流体連結している開口部と
を含む、ガスインジェクタ。 - 前記突起部が、前記第2の空間を囲む内面にざらつきのあるコーティングを有する、請求項14に記載のガスインジェクタ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IN201741035705 | 2017-10-09 | ||
IN201741035705 | 2017-10-09 | ||
JP2020520072A JP7150835B2 (ja) | 2017-10-09 | 2018-08-30 | バッフルを備えたガスインジェクタ |
PCT/US2018/048883 WO2019074589A1 (en) | 2017-10-09 | 2018-08-30 | GAS INJECTOR WITH DEFLECTOR |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020520072A Division JP7150835B2 (ja) | 2017-10-09 | 2018-08-30 | バッフルを備えたガスインジェクタ |
Publications (1)
Publication Number | Publication Date |
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JP2023002554A true JP2023002554A (ja) | 2023-01-10 |
Family
ID=65993753
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2020520072A Active JP7150835B2 (ja) | 2017-10-09 | 2018-08-30 | バッフルを備えたガスインジェクタ |
JP2022154540A Pending JP2023002554A (ja) | 2017-10-09 | 2022-09-28 | バッフルを備えたガスインジェクタ |
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JP2020520072A Active JP7150835B2 (ja) | 2017-10-09 | 2018-08-30 | バッフルを備えたガスインジェクタ |
Country Status (6)
Country | Link |
---|---|
US (2) | US11077410B2 (ja) |
JP (2) | JP7150835B2 (ja) |
KR (2) | KR102468488B1 (ja) |
CN (2) | CN111406309B (ja) |
TW (3) | TWI691007B (ja) |
WO (1) | WO2019074589A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US11077410B2 (en) * | 2017-10-09 | 2021-08-03 | Applied Materials, Inc. | Gas injector with baffle |
KR20230104704A (ko) * | 2020-11-13 | 2023-07-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세스 챔버에 가스를 전달하기 위한 장치 및 시스템 |
US20220364231A1 (en) * | 2021-05-11 | 2022-11-17 | Applied Materials, Inc. | Gas injector for epitaxy and cvd chamber |
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-
2018
- 2018-08-29 US US16/116,531 patent/US11077410B2/en active Active
- 2018-08-30 WO PCT/US2018/048883 patent/WO2019074589A1/en active Application Filing
- 2018-08-30 CN CN201880066517.7A patent/CN111406309B/zh active Active
- 2018-08-30 KR KR1020227005911A patent/KR102468488B1/ko active IP Right Grant
- 2018-08-30 KR KR1020207013257A patent/KR102367786B1/ko active IP Right Grant
- 2018-08-30 CN CN202311012565.7A patent/CN117198930A/zh active Pending
- 2018-08-30 JP JP2020520072A patent/JP7150835B2/ja active Active
- 2018-09-10 TW TW107131704A patent/TWI691007B/zh active
- 2018-09-10 TW TW109108364A patent/TWI745889B/zh active
- 2018-09-10 TW TW110137510A patent/TWI774581B/zh active
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2021
- 2021-07-01 US US17/365,791 patent/US11529592B2/en active Active
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2022
- 2022-09-28 JP JP2022154540A patent/JP2023002554A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CN117198930A (zh) | 2023-12-08 |
TW202046428A (zh) | 2020-12-16 |
JP7150835B2 (ja) | 2022-10-11 |
CN111406309A (zh) | 2020-07-10 |
JP2020537041A (ja) | 2020-12-17 |
KR102367786B1 (ko) | 2022-02-28 |
US20210322934A1 (en) | 2021-10-21 |
TWI691007B (zh) | 2020-04-11 |
TWI774581B (zh) | 2022-08-11 |
KR20200055143A (ko) | 2020-05-20 |
WO2019074589A1 (en) | 2019-04-18 |
KR102468488B1 (ko) | 2022-11-22 |
US20190105614A1 (en) | 2019-04-11 |
TW202205497A (zh) | 2022-02-01 |
US11077410B2 (en) | 2021-08-03 |
TW201926506A (zh) | 2019-07-01 |
KR20220031128A (ko) | 2022-03-11 |
US11529592B2 (en) | 2022-12-20 |
CN111406309B (zh) | 2023-08-18 |
TWI745889B (zh) | 2021-11-11 |
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