WO2024066478A1 - 一种太阳能电池及光伏组件 - Google Patents

一种太阳能电池及光伏组件 Download PDF

Info

Publication number
WO2024066478A1
WO2024066478A1 PCT/CN2023/099722 CN2023099722W WO2024066478A1 WO 2024066478 A1 WO2024066478 A1 WO 2024066478A1 CN 2023099722 W CN2023099722 W CN 2023099722W WO 2024066478 A1 WO2024066478 A1 WO 2024066478A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
transport layer
solar cell
hole transport
electron transport
Prior art date
Application number
PCT/CN2023/099722
Other languages
English (en)
French (fr)
Inventor
吴兆
孙朱行
杨丹
Original Assignee
隆基绿能科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 隆基绿能科技股份有限公司 filed Critical 隆基绿能科技股份有限公司
Publication of WO2024066478A1 publication Critical patent/WO2024066478A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers

Definitions

  • the present invention relates to the field of photovoltaic technology, in particular to a solar cell and a photovoltaic module.
  • the hole transport layers included in existing solar cells are mostly made of transition metal oxide materials such as molybdenum oxide, which is not conducive to improving the photoelectric conversion efficiency of solar cells.
  • the purpose of the present invention is to provide a solar cell and a photovoltaic module, wherein the material of the hole transport layer includes nickel nitride with a relatively stable work function and resistivity, so as to ensure that the hole transport layer has a high hole transport capacity and improve the photoelectric conversion efficiency of the solar cell.
  • the present invention provides a solar cell, which comprises: a light absorbing layer, an electron transport layer and a hole transport layer.
  • the electron transport layer is formed in the light absorbing layer or on the light absorbing layer.
  • the hole transport layer is formed on the light absorbing layer.
  • the material of the hole transport layer comprises nickel nitride.
  • the light absorption layer will generate electron and hole pairs after absorbing photons.
  • the electrons that have not been recombined in the light absorption layer move in the direction close to the electron transport layer, and are led out by the electron transport layer to the corresponding electrode.
  • the holes that have not been recombined in the light absorption layer move in the direction close to the hole transport layer, and are led out by the hole transport layer to the corresponding electrode, thereby forming a photocurrent.
  • the hole transport layer is formed on the light absorption layer and plays a role in collecting holes.
  • the barrier height for the migration of holes from the light absorption layer to the hole transport layer can be reduced, which is beneficial to the transmission of holes.
  • the resistivity of the material of the hole transport layer is low, the resistance of the migration of holes from the light absorption layer to the hole transport layer can be reduced, which can also be beneficial to the transmission of holes.
  • the material properties of nickel nitride such as work function and resistivity, are more stable and are not easily affected by material composition and defect type.
  • the process parameters in the process of forming nickel nitride are relatively easy to adjust.
  • the material of the above-mentioned hole transport layer includes nickel nitride, it is convenient to adjust the resistivity and work function of the hole transport layer to a suitable range according to the material of the light absorption layer and the requirements of the actual application scenario, while ensuring that the hole transport layer has a high and stable hole transport capacity, thereby solving the problem in the prior art that the hole transport capacity of the hole transport layer is poor due to the instability of material properties such as the work function of transition metal oxide materials such as molybdenum oxide, thereby improving the photoelectric conversion efficiency of solar cells.
  • the nickel nitride is Ni x N y .
  • x and y are both positive integers greater than or equal to 1, and 2 ⁇ x+y ⁇ 5.
  • the physical phase of the nickel nitride can be Ni 3 N, Ni 4 N, Ni 3 N2, Ni 2 N and NiN, etc. It can be seen that there are many kinds of physical phases of the nickel nitride.
  • the corresponding work function or resistivity and other material properties of the nickel nitrides of different physical phases may be different, so the nickel nitrides of the appropriate physical phases and the ratio between the nickel nitrides of each physical phase can be selected according to different practical application scenarios to ensure that the hole transport layer has a higher hole transport capacity in the corresponding practical application scenario, and improve the applicability of the solar cell provided by the present invention in different application scenarios.
  • the physical phases of the nickel nitride are more kinds, which can reduce the conditions such as the formation temperature and the ambient pressure that must be strictly required to form the nickel nitride with a fixed physical phase in the actual manufacturing process, and can reduce the manufacturing difficulty of the solar cell provided by the present invention.
  • the work function of the nickel nitride is greater than or equal to 5 eV and less than or equal to 5.5 eV.
  • the work function of most perovskite materials is about 4.97eV.
  • the work function of P-type crystalline silicon material is about 5 to 5.2eV.
  • the work function of nickel nitride is greater than or equal to 5eV and less than or equal to 5.5eV, it is beneficial to make the energy level of the hole transport layer including the nickel nitride material match the energy level of the light absorption layer of the perovskite material and the light absorption layer of the silicon material, respectively, so that the hole transport layer can be used as a hole transport layer included in the perovskite solar cell and the silicon-based solar cell, thereby improving the applicability of the solar cell provided by the present invention in different application scenarios.
  • the resistivity of the hole transport layer is 10 -5 ⁇ cm to 10 -1 ⁇ cm. At this time, the resistivity of the hole transport layer is low. Since the resistivity is inversely proportional to the conductivity, when the resistivity of the hole transport layer is low, the conductivity of the hole transport layer is high, which can reduce the resistance of the holes migrating from the light absorption layer to the hole transport layer, facilitate the transmission of holes, and further improve the photoelectric conversion efficiency of the solar cell.
  • the thickness of the hole transport layer is 2nm to 80nm.
  • the thickness range of the hole transport layer is relatively large, which can reduce the strict requirements on the formation time, formation temperature, ambient pressure and other conditions in the actual manufacturing process for forming a hole transport layer with a fixed thickness or a smaller thickness range, and can reduce the manufacturing difficulty of the solar cell provided by the present invention.
  • the crystalline state of the hole transport layer includes one or more of an amorphous phase, a microcrystalline phase and a polycrystalline phase.
  • the material includes a hole transport layer of nickel nitride in different crystal states
  • the corresponding resistivity and other material properties of nickel nitride may be different. Therefore, a hole transport layer with a corresponding crystal state can be selected according to different practical application scenarios to ensure that the hole transport layer has a high hole transport capacity in the corresponding practical application scenario, thereby improving the applicability of the solar cell provided by the present invention in different application scenarios.
  • crystal states of the above-mentioned hole transport layer which can reduce the strict requirements for forming temperature, environmental pressure and other conditions in the actual manufacturing process to form a hole transport layer with a fixed crystal state, and can reduce the manufacturing difficulty of the solar cell provided by the present invention.
  • the light absorbing layer is a perovskite absorbing layer.
  • the electron transport layer is formed on one side of the perovskite absorbing layer, and the hole transport layer is formed on the side of the perovskite absorbing layer away from the electron transport layer.
  • the solar cell provided by the present invention is a perovskite solar cell. Based on this, since the perovskite material has a series of advantages such as high light absorption coefficient, large carrier mobility and diffusion length, and adjustable band gap, the photoelectric conversion efficiency of the solar cell provided by the present invention can be further improved.
  • the light absorbing layer is a silicon substrate.
  • the solar cell further comprises a first passivation layer located between the hole transport layer and the silicon substrate.
  • the solar cell provided by the present invention is a silicon-based solar cell.
  • the solar cell also includes a first passivation layer located between the hole transport layer and the silicon substrate, and the first passivation layer and the hole transport layer can form a heterostructure, so in this case the solar cell provided by the present invention is a silicon-based heterojunction solar cell.
  • the heterostructure formed by the first passivation layer and the hole transport layer can achieve excellent interface passivation and selective collection of carriers, thereby further improving the photoelectric conversion efficiency of the solar cell provided by the present invention.
  • the material of the first passivation layer includes one or more of amorphous silicon, hydrogenated amorphous silicon and carbon-doped amorphous silicon.
  • the light absorbing layer has a first surface and a second surface opposite to each other.
  • the second surface has first and second regions arranged alternately along a direction parallel to the second surface.
  • the electron transport layer is formed in or on the first region.
  • the first passivation layer and the hole transport layer are sequentially formed on the second region.
  • the second surface of the light absorbing layer has a first region and a second region that are alternately arranged along a direction parallel to the second surface.
  • the electron transport layer is formed in the first region or on the first region.
  • the hole transport layer is formed above the second region.
  • the solar cell provided by the present invention is a back contact solar cell. Based on this, because the light receiving surface of the back contact solar cell is not blocked by the metal electrode, more light can be refracted into the light absorbing layer, so in this case, the photoelectric conversion efficiency of the solar cell provided by the present invention can be further improved.
  • the light absorbing layer has a first surface and a second surface relative to each other.
  • the first surface has a first region, which is a local region or a global region of the first surface.
  • the second surface has a second region, which is a local region or a global region of the second surface.
  • the electron transport layer is formed in the first region or on the first region.
  • the first passivation layer and the hole transport layer are sequentially formed on the second region.
  • the light absorbing layer has a first surface and a second surface relative to each other.
  • the electron transport layer is formed in or on the first region of the first surface
  • the hole transport layer is formed in or on the second region of the second surface.
  • the solar cell provided by the present invention is a double-sided contact solar cell.
  • the above-mentioned first region may be a local region or a global region of the first surface
  • the second region may be a local region or a global region of the second surface. It can be seen that the formation range of the electron transport layer and the hole transport layer in the present invention has a variety of possible implementation schemes, which is conducive to improving the applicability of the solar cell provided by the present invention in different application scenarios.
  • the solar cell when the electron transport layer is formed on the silicon substrate, the solar cell further includes a second passivation layer located between the electron transport layer and the silicon substrate.
  • the second passivation layer can passivate at least the surface of the silicon substrate in contact with the electron transport layer, reducing the rate of recombination of carriers at the contact point between the two.
  • the electron transport layer formed on the second passivation layer can selectively collect electrons in the silicon substrate to further improve the photoelectric conversion efficiency of the solar cell provided by the present invention.
  • the electron transport layer is an N-type amorphous silicon layer, an N-type microcrystalline silicon layer, a mixed layer of N-type amorphous silicon and microcrystalline silicon, or an N-type transition metal compound layer, and the second passivation layer is an intrinsic amorphous silicon layer.
  • the electron transport layer is an N-type polycrystalline silicon layer, and the second passivation layer is a tunneling passivation layer.
  • the electron transport layer is an N-type amorphous silicon layer, an N-type microcrystalline silicon layer, a mixed layer of N-type amorphous silicon and microcrystalline silicon, or an N-type transition metal compound layer, and the second passivation layer is an intrinsic amorphous silicon layer
  • the electron transport layer and the second passivation layer can constitute a heterostructure.
  • the electron transport layer and the second passivation layer can constitute a tunneling passivation contact structure.
  • the electron transport layer is an electron selective contact layer
  • the above two optional schemes can be provided, and the appropriate materials of the electron transport layer and the second passivation layer can be selected according to the requirements of the actual application scenario to improve the applicability of the solar cell provided by the present invention in different application scenarios.
  • the present invention further provides a photovoltaic module, which includes the solar cell provided by the first aspect and various implementations thereof.
  • Parts (1) to (3) in FIG. 1 are schematic longitudinal cross-sectional views of three structures of the light absorbing layer in an embodiment of the present invention
  • Parts (1) and (2) in FIG. 2 are schematic diagrams of two distribution situations of the first area on the first surface when the first surface is the light-receiving surface in an embodiment of the present invention
  • Parts (1) and (2) in FIG. 3 are schematic diagrams of two distribution situations of the first area on the first surface when the first surface is a backlight surface in an embodiment of the present invention
  • Parts (1) and (2) in FIG. 4 are schematic diagrams of two distribution conditions of the second area on the second surface when the second surface is the light-receiving surface in an embodiment of the present invention
  • Parts (1) and (2) in FIG. 5 are schematic diagrams of two distribution situations of the second area on the second surface when the second surface is a backlight surface in an embodiment of the present invention
  • FIG6 is a schematic diagram showing the distribution of the first area and the second area on the second surface in an embodiment of the present invention.
  • FIG. 7 is a schematic longitudinal cross-sectional view of a first structure of a solar cell provided by an embodiment of the present invention.
  • FIG8 is a schematic longitudinal cross-sectional view of a second structure of a solar cell provided by an embodiment of the present invention.
  • FIG9 is a schematic longitudinal cross-sectional view of a third structure of a solar cell provided by an embodiment of the present invention.
  • FIG10 is a schematic longitudinal cross-sectional view of a fourth structure of a solar cell provided by an embodiment of the present invention.
  • FIG11 is a schematic longitudinal cross-sectional view of a fifth structure of a solar cell provided by an embodiment of the present invention.
  • FIG12 is a schematic longitudinal cross-sectional view of a sixth structure of a solar cell provided by an embodiment of the present invention.
  • FIG. 13 is a schematic longitudinal cross-sectional view of a seventh structure of a solar cell provided by an embodiment of the present invention.
  • FIG14 is a schematic longitudinal cross-sectional view of an eighth structure of a solar cell provided by an embodiment of the present invention.
  • FIG15 is a schematic longitudinal cross-sectional view of a ninth structure of a solar cell provided by an embodiment of the present invention.
  • FIG16 is a schematic longitudinal cross-sectional view of a tenth structure of a solar cell provided in an embodiment of the present invention.
  • 11 is a light absorbing layer
  • 111 is a first surface
  • 112 is a second surface
  • 113 is a first region
  • 114 is a is the second region
  • 12 is the electron transport layer
  • 13 is the hole transport layer
  • 14 is the first passivation layer
  • 15 is the second passivation layer
  • 16 is the first transparent conductive layer
  • 17 is the second transparent conductive layer
  • 18 is the first surface passivation layer
  • 19 is the second surface passivation layer
  • 20 is the first electrode
  • 21 is the second electrode.
  • a layer/element when a layer/element is referred to as being "on" another layer/element, the layer/element may be directly on the other layer/element, or there may be an intermediate layer/element between them.
  • the layer/element may be "under” the other layer/element.
  • first and second are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “multiple” is two or more, unless otherwise clearly and specifically defined.
  • the meaning of “several” is one or more, unless otherwise clearly and specifically defined.
  • the terms “installed”, “connected”, and “connected” should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements.
  • installed should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements.
  • the hole transport layer included in the existing solar cells is mostly made of transition metal oxide materials such as molybdenum oxide, which is not conducive to improving the photoelectric conversion efficiency of solar cells.
  • the following is an example of a silicon heterojunction solar cell:
  • Traditional silicon heterojunction solar cells are solar cells that insert a layer of intrinsic amorphous silicon thin film between a crystalline silicon substrate and a doped amorphous silicon thin film, so as to use the hydrogen atoms in the intrinsic amorphous silicon layer to passivate the dangling bonds on the surface of the crystalline silicon substrate and reduce the recombination rate of carriers on the surface of the crystalline silicon substrate.
  • the doped amorphous silicon thin film has a band gap of no more than 1.74 eV.
  • the doped amorphous silicon film located on the light-receiving surface of the crystalline silicon substrate has a certain parasitic absorption of light in the band below 500nm, which leads to a reduction in the light incident on the crystalline silicon substrate, thereby hindering the further improvement of the cell efficiency.
  • technicians in this field have developed a method of using transition metal oxides with a wider band gap to replace doped amorphous silicon as a selective contact layer.
  • N-type transition metal oxides with high work function as a hole transport layer has received widespread attention, especially the use of molybdenum oxide materials to make the hole transport layer in silicon heterojunction cells, which can increase the photoelectric conversion efficiency of the silicon heterojunction cell to 23.5%.
  • transition metal oxides such as work function and conductivity
  • the material properties of the above transition metal oxides are greatly affected by oxygen defects, and the influencing factors are not very clear, resulting in poor material stability of transition metal oxides and difficulty in accurately regulating material parameters by adjusting the process.
  • transition metal oxide materials such as molybdenum oxide are used to manufacture the hole transport layer included in the silicon heterojunction battery, it is not conducive to improving the photoelectric conversion efficiency of the silicon heterojunction battery.
  • an embodiment of the present invention provides a solar cell.
  • the solar cell provided by the embodiment of the present invention can be a perovskite solar cell, or a silicon-based solar cell, etc.
  • the solar cell provided by the embodiment of the present invention can be a double-sided contact cell, that is, one of the first electrode and the second electrode with opposite polarities included in the solar cell is arranged on the light-receiving side of the solar cell, and the other is arranged on the backlight side of the solar cell.
  • the solar cell can also be a back-contact solar cell, that is, the first electrode and the second electrode with opposite polarities included in the solar cell are both arranged on the backlight side of the solar cell.
  • the solar cell provided by the embodiment of the present invention includes: a light absorption layer 11, an electron transport layer 12 and a hole transport layer 13.
  • the electron transport layer 12 is formed in the light absorption layer 11 or formed on the light absorption layer 11.
  • the hole transport layer 13 is formed on the light absorption layer 11.
  • the material of the hole transport layer 13 includes nickel nitride.
  • the material of the light absorbing layer can be determined according to the type of solar cell.
  • the material of the light absorbing layer 11 is a perovskite material.
  • the perovskite material may be an inorganic perovskite material, an organic perovskite material, or an organic-inorganic hybrid perovskite material.
  • the material of the light absorbing layer 11 may be CsPbI 2 Br, MAPbBr 3 , FAPbI 3 or Cs 1-yz FA y MA z PbI 3-x Br x (wherein FA is methyl ether, MA is methylamine, 0 ⁇ x ⁇ 3, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 1, and 0 ⁇ y+z ⁇ 1), etc.
  • the material of the light absorption layer is silicon.
  • the thickness of the light absorbing layer can be set according to actual needs and is not specifically limited here.
  • the two opposite surfaces of the light absorbing layer 11 can be polished surfaces.
  • the side of the light absorbing layer 11 opposite to the light receiving surface can be a velvet surface, and the side opposite to the backlight surface can be a polished surface.
  • the velvet structure has a light trapping effect, so when the surface of the light absorbing layer 11 opposite to the light receiving surface is a velvet surface, more light can be refracted into the light absorbing layer 11.
  • the polished surface has relatively good reflective properties, after the light reaches the surface of the light absorbing layer 11 opposite to the backlight surface, it can be at least partially reflected back into the light absorbing layer 11 and reused by the light absorbing layer 11, thereby improving the photoelectric conversion efficiency of the solar cell.
  • the two opposite surfaces of the light absorbing layer 11 can also be velvet surfaces.
  • the solar cell provided in the embodiment of the present invention is used as the top cell included in the stacked solar cell, the side of the light absorbing layer 11 in contact with the bottom cell is velvet, which can refract more light into the bottom cell and improve the photoelectric conversion efficiency of the bottom cell.
  • the material of the electron transport layer can be any material having the function of transporting electrons.
  • the thickness of the electron transport layer and the formation range of the electron transport layer in the light absorption layer or on the light absorption layer can be set according to the type of solar cell and the actual application scenario, as long as it can be applied to the solar cell provided in the embodiment of the present invention.
  • the thickness of the hole transport layer and the formation range of the hole transport layer on the light absorption layer can be set according to the type of solar cell and the actual application scenario, and are not specifically limited here.
  • the hole transport layer 13 and the electron transport layer 12 can also be located on opposite sides of the light absorption layer 11.
  • the solar cell is a double-sided contact solar cell.
  • the hole transport layer 13 and the electron transport layer 12 can be located on the same side of the light absorption layer 11. At this time, the solar cell is a back contact cell.
  • the material of the hole transport layer includes nickel nitride.
  • the valence of the nickel element in the nickel nitride and the stoichiometric ratio between the nickel element and the nitrogen element in the nickel nitride can be set according to the actual application scenario and are not specifically limited here.
  • hole transport layer may include other materials that the hole transport layer may include may be determined according to actual application scenarios.
  • the material of the hole transport layer can also be P-type amorphous silicon and/or P-type microcrystalline silicon.
  • the material of the hole transport layer may also include 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviated as Sprio-OMeTAD), 2,2,7,7-tetrakis(N,N-di-p-tolyl)amino-9,9-spirobifluorene (abbreviated as spiro-TTB) or trifluoromannose (abbreviated as TATM), etc.
  • Sprio-OMeTAD 2,2,7,7-tetrakis(N,N-di-p-tolyl)amino-9,9-spirobifluorene
  • spiro-TTB 2,2,7,7-tetrakis(N,N-di-p-tolyl)amino-9,9-spirobifluorene
  • TATM trifluoromannose
  • the solar cell provided by the embodiment of the present invention may further include a first electrode 20 and a second electrode 21.
  • the first electrode 20 is in ohmic contact with the hole transport layer 13 to conduct holes collected by the hole transport layer 13.
  • the second electrode 21 is in ohmic contact with the electron transport layer 12 to conduct electrons collected by the electron transport layer 12.
  • the materials of the first electrode 20 and the second electrode 21 may be conductive materials such as silver, aluminum, copper, nickel, and gold.
  • the light absorption layer when the solar cell provided by the embodiment of the present invention is in a working state, the light absorption layer will generate electron and hole pairs after absorbing photons.
  • the electrons that have not been recombined in the light absorption layer move in the direction close to the electron transport layer, and are exported to the corresponding electrode by the electron transport layer.
  • the holes that have not been recombined in the light absorption layer move in the direction close to the hole transport layer, and are exported to the corresponding electrode by the hole transport layer, thereby forming a photocurrent.
  • the hole transport layer is formed on the light absorption layer and plays a role in collecting holes.
  • the barrier height of the hole migration from the light absorption layer to the hole transport layer can be reduced, which is beneficial to the transmission of holes.
  • the resistivity of the material of the hole transport layer is low, the resistance of the hole migration from the light absorption layer to the hole transport layer can be reduced, which can also be beneficial to the transmission of holes.
  • the material properties such as work function and resistivity of nickel nitride are more stable, and it is not easily affected by material composition and defect type, and the process parameters in the process of forming nickel nitride are relatively convenient to adjust.
  • the material of the above-mentioned hole transport layer includes nickel nitride, it is convenient to adjust the resistivity and work function of the hole transport layer to a suitable range according to the material of the light absorption layer and the requirements of the actual application scenario, while ensuring that the hole transport layer has a high and stable hole transport capacity, thereby solving the problem in the prior art that the hole transport capacity of the hole transport layer is poor due to the unstable material properties such as the work function of transition metal oxide materials such as molybdenum oxide, thereby improving the photoelectric conversion efficiency of solar cells.
  • the nickel nitride is Ni x N y , wherein x and y are both positive integers greater than or equal to 1, and 2 ⁇ x+y ⁇ 5.
  • the phase of the nickel nitride may be Ni 3 N, Ni 4 N, Ni 3 N 2 , Ni 2 N, NiN, etc.
  • the corresponding work function or resistivity and other material properties of nickel nitrides of different phases may be different.
  • the nickel nitrides of suitable types of phases and the ratios between the nickel nitrides of each phase can be selected according to different practical application scenarios to ensure that the hole transport layer has a high hole transport capacity in the corresponding practical application scenarios, thereby improving the applicability of the solar cell provided by the embodiment of the present invention in different application scenarios.
  • there are many kinds of phases of the above-mentioned nickel nitrides which can reduce the strict requirements for the formation temperature, ambient pressure and other conditions in the actual manufacturing process to form a nickel nitride with a fixed phase, and can reduce the manufacturing difficulty of the solar cell provided by the embodiment of the present invention.
  • the material of the hole transport layer may include nickel nitride having one phase.
  • the material of the hole transport layer may include only Ni 3 N.
  • the material of the hole transport layer may also include nickel nitride of multiple phases.
  • the material of the hole transport layer may include Ni 3 N, Ni 3 N 2 and Ni 2 N.
  • the corresponding material properties such as work function or resistivity of nickel nitrides of different phases may be different. Therefore, when the material of the above-mentioned hole transport layer includes nickel nitrides of at least two phases, the stoichiometric ratio between the nickel nitrides of each phase can be set according to the material of the light absorption layer and the actual application scenario, and no specific limitation is made here.
  • the work function of the nickel nitride is greater than or equal to 5eV and less than or equal to 5.5eV.
  • the work function of the nickel nitride may be 5eV, 5.1eV, 5.2eV, 5.3eV, 5.4eV or 5.5eV.
  • the work function of most perovskite materials is about 4.97eV.
  • the work function of P-type crystalline silicon material is about 5 to 5.2eV.
  • the work function of nickel nitride is greater than or equal to 5eV and less than or equal to 5.5eV
  • the resistivity of the hole transport layer is 10-5 ⁇ cm to 10-1 ⁇ cm.
  • the resistivity of the hole transport layer may be 10-1 ⁇ cm, 10-2 ⁇ cm, 10-3 ⁇ cm, 10-4 ⁇ cm or 10-5 ⁇ cm.
  • the resistivity of the hole transport layer is relatively low. Since the resistivity is inversely proportional to the conductivity, when the resistivity of the hole transport layer is relatively low, the conductivity of the hole transport layer is relatively high, which can reduce the resistance of the holes migrating from the light absorption layer to the hole transport layer, facilitate the transmission of holes, and further improve the photoelectric conversion efficiency of the solar cell.
  • the thickness of the hole transport layer is 2 nm to 80 nm.
  • the thickness of the hole transport layer can be 2nm, 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm or 80nm.
  • the thickness range of the hole transport layer is relatively large, which can reduce the strict requirements on the formation time, formation temperature, ambient pressure and other conditions in the actual manufacturing process for forming a hole transport layer with a fixed thickness or a smaller thickness range, and can reduce the manufacturing difficulty of the solar cell provided by the embodiment of the present invention.
  • the crystalline state of the hole transport layer includes one or more of an amorphous phase, a microcrystalline phase, and a polycrystalline phase.
  • the crystalline state of the hole transport layer may be only an amorphous phase, a microcrystalline phase, or a polycrystalline phase.
  • the crystalline state of the hole transport layer may include any two of the amorphous phase, the microcrystalline phase, and the polycrystalline phase, or a combination of three.
  • the crystalline state refers to the dominant form of solid objects.
  • Solid objects can be divided into two forms of existence: crystals and amorphous.
  • a crystal is a solid with a regular geometric shape formed by a crystallization process.
  • atoms or molecules are arranged periodically and repeatedly in space according to a certain rule.
  • the single crystal phase in a crystal refers to the regular and periodic arrangement of particles inside the crystal in three-dimensional space.
  • the microcrystalline phase in a crystal refers to a crystal in which each grain is composed of only a few thousand or tens of thousands of unit cells juxtaposed, and this crystal only repeats about dozens of cycles in the direction of a crystal axis.
  • the polycrystalline phase in a crystal refers to a crystal composed of more than two single crystals of the same or different species.
  • the crystalline state of a solid in which atoms or molecules are arranged irregularly have no periodicity, and no symmetry, corresponding to a crystal, is an amorphous phase.
  • a hole transport layer with a corresponding crystal state can be selected according to different actual application scenarios to ensure that the hole transport layer has a higher hole transport capacity in the corresponding actual application scenario, thereby improving the applicability of the solar cell provided by the embodiment of the present invention in different application scenarios.
  • the solar cell provided by the embodiment of the present invention is a perovskite solar cell.
  • Titanite material has a series of advantages such as high absorption coefficient, large carrier mobility and diffusion length, and adjustable band gap, so it can further improve the photoelectric conversion efficiency of the solar cell provided by the embodiment of the present invention.
  • the electron transport layer can be formed on the side of the perovskite absorption layer opposite to the light-receiving side of the solar cell.
  • the hole transport layer is formed on the side of the perovskite absorption layer opposite to the backlight side of the solar cell.
  • the perovskite solar cell is a formal structure.
  • the electron transport layer can be formed on the side of the perovskite absorption layer opposite to the backlight side of the solar cell.
  • the hole transport layer is formed on the side of the perovskite absorption layer opposite to the light-receiving side of the solar cell.
  • the perovskite solar cell is a trans structure.
  • the material of the electron transport layer can be set according to actual needs.
  • the material of the electron transport layer can be one or more of titanium dioxide, zinc oxide, tin oxide and fullerene.
  • the solar cell when the light absorption layer 11 is a silicon substrate, the solar cell further includes a first passivation layer 14 between the hole transport layer 13 and the silicon substrate. It is understandable that when the light absorption layer 11 is a silicon substrate, the solar cell provided by the embodiment of the present invention is a silicon-based solar cell. In addition, the solar cell further includes a first passivation layer 14 between the hole transport layer 13 and the silicon substrate, and the first passivation layer 14 and the hole transport layer 13 can form a heterostructure, so in this case, the solar cell provided by the embodiment of the present invention is a silicon-based heterojunction solar cell. In addition, the heterostructure formed by the first passivation layer 14 and the hole transport layer 13 can achieve excellent interface passivation and selective collection of carriers, thereby further improving the photoelectric conversion efficiency of the solar cell provided by the embodiment of the present invention.
  • the material and thickness of the above-mentioned first passivation layer can be set according to actual needs.
  • the material of the first passivation layer may include one or more of amorphous silicon, hydrogenated amorphous silicon and carbon-doped amorphous silicon.
  • the material of the first passivation layer may be only one of amorphous silicon, hydrogenated amorphous silicon and carbon-doped amorphous silicon.
  • the material of the first passivation layer may include any two or three of amorphous silicon, hydrogenated amorphous silicon and carbon-doped amorphous silicon.
  • the stoichiometric ratio between the various materials and the distribution of the various materials in the first passivation layer can be set according to actual needs.
  • the first passivation layer may include a first passivation film and a second passivation film stacked together.
  • the material of the first passivation film is amorphous silicon
  • the material of the second passivation film is hydrogenated amorphous silicon.
  • the first passivation layer is composed of A hybrid material layer made of amorphous silicon and hydrogenated amorphous silicon.
  • the material of the electron transport layer can be a semiconductor material such as silicon, silicon germanium, germanium, doped silicon carbide, gallium arsenide, etc.
  • the side of the light absorbing layer on which the electron transport layer and the hole transport layer are formed can be determined according to the type of solar cell.
  • the light absorbing layer 11 has a first surface and a second surface opposite to each other. Along a direction parallel to the second surface, the second surface has first regions 113 and second regions 114 arranged alternately.
  • the electron transport layer 12 is formed in or on the first region 113.
  • the first passivation layer 14 and the hole transport layer 13 are sequentially formed on the second region 114.
  • the first surface of the light absorbing layer is opposite to the light receiving surface of the solar cell, and the second surface thereof is opposite to the backlight surface of the solar cell.
  • the electron transport layer 12 may be an N-type doped semiconductor region formed in the first region 113.
  • the electron transport layer 12 may also be an N-type doped semiconductor layer formed on the first region 113.
  • the second surface may also have an isolation region between each first region 113 and the second region 114, so that the electron transport layer 12 and the hole transport layer 13 are isolated, and the electrons and holes generated in the light absorbing layer 11 are inhibited from recombining at the lateral junction of the electron transport layer 12 and the hole transport layer 13, thereby further improving the photoelectric conversion efficiency of the solar cell.
  • the above-mentioned light absorption layer has a first surface and a second surface relative to each other.
  • the first surface 111 has a first region 113
  • the first region 113 is a local region or a global region of the first surface 111.
  • the second surface 112 has a second region 114
  • the second region 114 is a local region or a global region of the second surface 112.
  • the electron transport layer 12 is formed in or on the first region 113.
  • the first passivation layer 14 and the hole transport layer 13 are sequentially formed on the second region 114.
  • the first surface 111 of the light absorbing layer 11 may be opposite to the light receiving surface of the solar cell, and the second surface 112 thereof may be opposite to the backlight surface of the solar cell.
  • the first surface 111 of the light absorbing layer 11 may be opposite to the backlight surface of the solar cell, and the second surface 112 thereof may be opposite to the light receiving surface of the solar cell.
  • the electron transport layer 12 can be disposed as a whole layer in or on the first surface.
  • the distances between each part of the light absorption layer 11 and the electron transport layer 12 are roughly the same, so that the path lengths of the electrons that have not been recombined in each part of the light absorption layer 11 to be conducted to the electron transport layer 12 can be roughly the same, thereby enabling the electrons that have not been recombined in each part of the light absorption layer 11 to be quickly exported by the electron transport layer 12, thereby reducing the recombination rate.
  • the first region 113 is a local region of the first surface 111
  • the boundary of the first region 113 is located within the boundary of the first surface 111.
  • the first surface 111 may have only one first region 113, or may have multiple first regions 113.
  • the electron transport layer 12 formed in or on the first region 113 is a local contact layer.
  • the first region 113 is a local region, which can reduce the absorption of sunlight by the electron transport layer 12, so that more sunlight can be transmitted into the light absorption layer 11, further improving the photoelectric conversion efficiency of the solar cell.
  • the boundary of the second region 114 coincides with the boundary of the second surface 112.
  • the boundary of the second region 114 is located within the boundary of the second surface 112.
  • the second surface 112 may have only one second region 114 or multiple second regions 114.
  • the first passivation layer 14 and the hole transport layer 13 formed on the second region 114 may constitute a local passivation contact structure.
  • the beneficial effects of the second region 114 being a local region or a global region possessed by the second surface can refer to the beneficial effects of the first region 113 being a local region or a global region possessed by the first surface as described above, and will not be repeated here.
  • the solar cell when the electron transport layer 12 is formed on a silicon substrate, the solar cell further includes a second passivation layer 15 located between the electron transport layer 12 and the silicon substrate.
  • the second passivation layer 15 can at least passivate the portion of the surface where the silicon substrate contacts the electron transport layer 12, thereby reducing the rate at which carriers recombine at the contact point between the two.
  • the electron transport layer 12 formed on the second passivation layer 15 can selectively collect electrons in the silicon substrate, so as to further improve the photoelectric conversion efficiency of the solar cell provided by the embodiment of the present invention.
  • the material of the second passivation layer can be determined according to the material of the electron transport layer.
  • the electron transport layer is an N-type amorphous silicon layer, an N-type microcrystalline silicon layer, an N-type amorphous silicon layer and A mixed layer of microcrystalline silicon or an N-type transition metal compound layer.
  • the electron transport layer and the second passivation layer can form a heterostructure.
  • the second passivation layer is an intrinsic amorphous silicon layer.
  • the above-mentioned electron transport layer is an N-type polysilicon layer.
  • the electron transport layer and the second passivation layer can constitute a tunneling passivation contact structure.
  • the second passivation layer is a tunneling passivation layer.
  • the material of the tunneling passivation layer can be any dielectric material with a tunneling passivation effect.
  • the material of the tunneling passivation layer may include one or more of silicon oxide, aluminum oxide, titanium oxide, hafnium dioxide, gallium oxide, tantalum pentoxide, niobium pentoxide, silicon nitride, silicon carbonitride, aluminum nitride, titanium nitride, and titanium nitride carbide.
  • the electron transport layer is an N-type amorphous silicon layer, an N-type microcrystalline silicon layer, a mixed layer of N-type amorphous silicon and microcrystalline silicon, or an N-type transition metal compound layer, and the second passivation layer is an intrinsic amorphous silicon layer
  • the electron transport layer and the second passivation layer can constitute a heterogeneous structure.
  • the electron transport layer and the second passivation layer can constitute a tunneling passivation contact structure.
  • the electron transport layer is an electron selective contact layer
  • the above two optional schemes can be provided, and the appropriate materials for the electron transport layer and the second passivation layer can be selected according to the requirements of the actual application scenario to improve the applicability of the solar cell provided by the embodiment of the present invention in different application scenarios.
  • the solar cell provided in an embodiment of the present invention also includes a first surface passivation layer 18 formed on the side of the light absorbing layer 11 close to the light receiving surface, so as to reduce the carrier recombination rate on the side of the light absorbing layer 11 close to the light receiving surface, thereby further improving the photoelectric conversion efficiency of the solar cell.
  • the specific formation position of the first surface passivation layer can be determined according to the formation positions of the electron transport layer and the hole transport layer. For example: as shown in FIG7, when the hole transport layer 13 is disposed on the side of the light absorbing layer 11 opposite to the light receiving surface, the first surface passivation layer 18 is formed on the hole transport layer 13. For another example: as shown in FIG9, when the hole transport layer 13 is partially disposed on the side of the light absorbing layer 11 opposite to the light receiving surface, and the solar cell further includes a first passivation layer 14, the first surface passivation layer 18 is formed on the first passivation layer 14.
  • the solar cell provided in an embodiment of the present invention also includes a second surface passivation layer 19 formed on the side of the light absorbing layer 11 close to the backlight surface, so as to reduce the carrier recombination rate on the side of the light absorbing layer 11 close to the light receiving surface, thereby further improving the photoelectric conversion efficiency of the solar cell.
  • the specific formation position of the second surface passivation layer can be determined according to the formation positions of the electron transport layer and the hole transport layer.
  • the entire electron transport layer 12 is arranged
  • the second surface passivation layer 19 is formed on the electron transport layer 12.
  • the second surface passivation layer 19 is directly formed on the surface of the light absorbing layer 11 opposite to the backlight surface.
  • the thickness and material of the first surface passivation layer and the second surface passivation layer can be set according to actual needs and are not specifically limited here.
  • the material of the first surface passivation layer and the second surface passivation layer can be silicon nitride, silicon oxynitride or magnesium fluoride.
  • the solar cell may further include a first transparent conductive layer 16 formed on the hole transport layer 13 to facilitate the extraction of holes.
  • the solar cell may further include a second transparent conductive layer 17 formed on the electron transport layer 12 to facilitate the extraction of electrons.
  • the thickness and material of the first transparent conductive layer and the second transparent conductive layer can be set according to actual needs, and are not specifically limited here.
  • the materials of the first transparent conductive layer and the second transparent conductive layer can be fluorine-doped tin oxide, aluminum-doped zinc oxide, tin-doped indium oxide, tungsten-doped indium oxide, molybdenum-doped indium oxide, cerium-doped indium oxide and indium hydroxide, etc.
  • the work functions of the first transparent conductive layer and the second transparent conductive layer can be the same or different.
  • the work functions of the first transparent conductive layer and the second transparent conductive layer can be determined according to the work functions of the electron transport layer and the hole transport layer, respectively, so as to help reduce the contact barrier between the hole transport layer and the first electrode in the solar cell, and the contact barrier between the electron transport layer and the second electrode to a smaller target range at the same time, and further improve the photoelectric conversion efficiency of the solar cell.
  • An embodiment of the present invention further provides a photovoltaic module, which includes the solar cell provided by the above embodiment.
  • the beneficial effects of the photovoltaic module provided by the embodiment of the present invention can be analyzed by referring to the beneficial effects of the solar cell provided by the above embodiment described above, and will not be repeated here.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种太阳能电池及光伏组件，涉及太阳能电池技术领域，通过空穴传输层的材料包括具有较为稳定的功函数和电阻率的镍氮化物，以确保空穴传输层具有较高的空穴传输能力，提升太阳能电池的光电转换效率。所述太阳能电池包括光吸收层、电子传输层和空穴传输层。电子传输层形成在光吸收层内或形成在光吸收层上。空穴传输层形成在光吸收层上。空穴传输层的材料包括镍氮化物。所述太阳能电池应用与光伏组件中。

Description

一种太阳能电池及光伏组件
本申请要求在2022年9月27日提交中国专利局、申请号为202211185760.5、发明名称为“一种太阳能电池及光伏组件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及光伏技术领域，特别是涉及一种太阳能电池及光伏组件。
背景技术
太阳能作为一种环保可再生能源，近些年受到了越来越多的关注。相应的，基于光电效应的光伏太阳能电池的应用范围也越来越广。
但是，现有的太阳能电池包括的空穴传输层大多采用氧化钼等过渡金属氧化物材料制造形成，不利于提升太阳能电池的光电转换效率。
发明内容
本发明的目的在于提供一种太阳能电池及光伏组件，通过空穴传输层的材料包括具有较为稳定的功函数和电阻率的镍氮化物，以确保空穴传输层具有较高的空穴传输能力，提升太阳能电池的光电转换效率。
第一方面，本发明提供了一种太阳能电池，该太阳能电池包括：光吸收层、电子传输层和空穴传输层。电子传输层形成在光吸收层内或形成在光吸收层上。空穴传输层形成在光吸收层上。空穴传输层的材料包括镍氮化物。
采用上述技术方案的情况下，在实际的工作过程中，光吸收层在吸收光子后会产生电子和空穴对。其中，光吸收层内未发生复合的电子沿靠近电子传输层的方向运动，并由电子传输层导出至相应电极。光吸收层内未发生复合的空穴沿靠近空穴传输层的方向运动，并由空穴传输层导出至相应电极，从而形成光电流。其中，空穴传输层形成在光吸收层上，并起到收集空穴的作用。基于此，当空穴传输层的材料的功函数与光吸收层的材料的功函数相匹配时，可以降低空穴由光吸收层迁移至空穴传输层内的势垒高度，利于空穴的传输。并且，当空穴传输层的材料的电阻率较低时，可以降低空穴由光吸收层迁移至空穴传输层内的阻力，也可以利于空穴的传输。在此情况下， 与过渡金属氧化物材料相比，镍氮化物的功函数和电阻率等材料特性更为稳定、且其不易受材料成分和缺陷类型的影响，并且形成镍氮化物过程中的工艺参数调节较为方便，因此在上述空穴传输层的材料包括镍氮化物的情况下，便于根据光吸收层的材料、以及实际应用场景的需求将空穴传输层的电阻率和功函数调整至合适范围的同时，可以确保空穴传输层具有较高、且稳定的空穴传输能力，从而可以解决现有技术中因氧化钼等过渡金属氧化物材料的功函数等材料特性不稳定使得空穴传输层的空穴传输能力较差的问题，提升太阳能电池的光电转换效率。
作为一种可能的实现方式，上述镍氮化物为NixNy。其中，x和y均为大于等于1的正整数、且2≤x+y≤5。在此情况下，上述镍氮化物的物相可以为Ni3N、Ni4N、Ni3N2、Ni2N和NiN等。由此可见，上述镍氮化物的物相种类较多。并且，不同物相的镍氮化物的对应的功函数或电阻率等材料特性可能不同，因此可以根据不同的实际应用场景选择合适种类物相的镍氮化物、以及各物相的镍氮化物之间的配比，以确保空穴传输层在相应实际应用场景下具有较高的空穴传输能力，提高本发明提供的太阳能电池在不同应用场景下的适用性。另外，上述镍氮化物的物相种类较多，可以降低实际制造过程中为形成具有固定物相的镍氮化物而必须严格要求形成温度、环境压强等条件，可以降低本发明提供的太阳能电池的制造难度。
作为一种可能的实现方式，上述镍氮化物的功函数大于等于5eV、且小于等于5.5eV。
采用上述技术方案的情况下，大部分钙钛矿材料的功函数约为4.97eV。另外，P型晶体硅材料的功函数约为5至5.2eV。基于此，当镍氮化物的功函数大于等于5eV、且小于等于5.5eV的情况下，利于使得材料包括镍氮化物的空穴传输层的能级可以分别与材料为钙钛矿材料的光吸收层、以及材料为硅的光吸收层的能级相匹配，从而使得该空穴传输层可以作为钙钛矿太阳能电池和硅基太阳能电池包括的空穴传输层，提高本发明提供的太阳能电池在不同应用场景下的适用性。
作为一种可能的实现方式，上述空穴传输层的电阻率为10-5Ωcm至10-1Ωcm。此时，空穴传输层的电阻率较低。因电阻率与电导率成反比，故当空穴传输层的电阻率较低时，空穴传输层的电导率较高，可以降低空穴由光吸收层迁移至空穴传输层内的阻力，利于空穴的传输，进而可以进一步提升太阳能电池的光电转换效率。
作为一种可能的实现方式，上述空穴传输层的厚度为2nm至80nm。此时，空穴传输层的厚度范围较大，可以降低实际制造过程中为形成具有固定厚度或较小厚度范围的空穴传输层而必须严格要求形成时间、形成温度、环境压强等条件，可以降低本发明提供的太阳能电池的制造难度。
作为一种可能的实现方式，上述空穴传输层的晶态包括非晶相、微晶相和多晶相中的一种或多种。
采用上述技术方案的情况下，因材料包括镍氮化物的空穴传输层的晶态不同时，镍氮化物的对应的电阻率等材料特性可能不同，因此可以根据不同的实际应用场景选择形成具有相应晶态的空穴传输层，以确保空穴传输层在相应实际应用场景下具有较高的空穴传输能力，提高本发明提供的太阳能电池在不同应用场景下的适用性。另外，上述空穴传输层的晶态种类较多，可以降低实际制造过程中为形成具有固定晶态的空穴传输层而必须严格要求形成温度、环境压强等条件，可以降低本发明提供的太阳能电池的制造难度。
作为一种可能的实现方式，上述光吸收层为钙钛矿吸收层。在此情况下，电子传输层形成在钙钛矿吸收层的一侧，空穴传输层形成在钙钛矿吸收层背离电子传输层的一侧。
采用上述技术方案的情况下，当光吸收层为钙钛矿光吸收层时，本发明提供的太阳能电池为钙钛矿太阳能电池。基于此，因钙钛矿材料具有吸光系数高、载流子迁移率和扩散长度大、带隙可调节等一系列优点，故可以进一步提高本发明提供的太阳能电池的光电转换效率。
作为一种可能的实现方式，上述光吸收层为硅基底。在此情况下，太阳能电池还包括位于空穴传输层与硅基底之间的第一钝化层。
采用上述技术方案的情况下，当光吸收层为硅基底时，本发明提供的太阳能电池为硅基太阳能电池。并且，太阳能电池还包括位于空穴传输层与硅基底之间的第一钝化层，该第一钝化层与空穴传输层可以形成异质结构，因此该情况下本发明提供的太阳能电池为硅基异质结太阳能电池。另外，第一钝化层与空穴传输层形成的异质结构可以实现优异的界面钝化和载流子的选择性收集，从而可以进一步提高本发明提供的太阳能电池的光电转换效率。
作为一种可能的实现方式，上述第一钝化层的材料包括非晶硅、氢化非晶硅和掺碳非晶硅中的一种或多种。
作为一种可能的实现方式，上述光吸收层具有相对的第一面和第二面。 沿着平行于第二面的方向，第二面具有交替设置的第一区域和第二区域。在此情况下，电子传输层形成在第一区域内或第一区域上。沿着远离光吸收层的方向，第一钝化层和空穴传输层依次形成在第二区域上。
采用上述技术方案的情况下，沿着平行于第二面的方向，光吸收层的第二面具有交替设置的第一区域和第二区域。并且，电子传输层形成在第一区域内或第一区域上。空穴传输层形成在第二区域的上方。在此情况下，当光吸收层的第二面与太阳能电池的受光面相对时，本发明提供的太阳能电池为背接触太阳能电池。基于此，因背接触太阳能电池的受光面没有金属电极遮挡影响，可以使得更多的光线折射至光吸收层内，故该情况下可以进一步提高本发明提供的太阳能电池的光电转换效率。
作为一种可能的实现方式，上述光吸收层具有相对的第一面和第二面。第一面具有第一区域，第一区域为第一面具有的局部区域或全局区域。第二面具有第二区域，第二区域为第二面具有的局部区域或全局区域。在此情况下，电子传输层形成在第一区域内或第一区域上。沿着远离光吸收层的方向，第一钝化层和空穴传输层依次形成在第二区域上。
采用上述技术方案的情况下，光吸收层具有相对的第一面和第二面。并且，电子传输层形成在第一面具有的第一区域内或第一区域上，空穴传输层形成在第二面具有的第二区域内或第二区域上。此时，本发明提供的太阳能电池为双面接触太阳能电池。另外，上述第一区域可以为第一面具有的局部区域或全局区域，第二区域可以为第二面具有的局部区域或全局区域。由此可见，本发明中电子传输层和空穴传输层的形成范围具有多种可能的实现方案，利于提高本发明提供的太阳能电池在不同应用场景下的适用性。
作为一种可能的实现方式，当电子传输层形成在硅基底上时，上述太阳能电池还包括位于电子传输层与硅基底之间的第二钝化层。
采用上述技术方案的情况下，第二钝化层可以至少对硅基底与电子传输层相接触的部分表面进行钝化，降低载流子在二者的接触处发生复合的速率。并且，形成在第二钝化层上的电子传输层能够实现对硅基底内的电子进行选择性收集，以进一步提高本发明提供的太阳能电池的光电转换效率。
作为一种可能的实现方式，上述电子传输层为N型非晶硅层、N型微晶硅层、N型非晶硅与微晶硅的混合层或N型过渡金属化合物层，第二钝化层为本征非晶硅层。或，电子传输层为N型多晶硅层，第二钝化层为隧穿钝化层。
采用上述技术方案的情况下，当电子传输层为N型非晶硅层、N型微晶硅层、N型非晶硅与微晶硅的混合层或N型过渡金属化合物层、且第二钝化层为本征非晶硅层时，电子传输层和第二钝化层可以构成异质结构。另外，当电子传输层为N型多晶硅层、且第二钝化层为隧穿钝化层时，电子传输层和第二钝化层可以构成隧穿钝化接触结构。由此可见，当电子传输层为电子选择性接触层时，可以具有以上两种可选方案，可以根据实际应用场景要求选择合适的电子传输层和第二钝化层的材料，以提高本发明提供的太阳能电池在不同应用场景下的适用性。
第二方面，本发明还提供了一种光伏组件，该光伏组件包括第一方面及其各种实现方式提供的太阳能电池。
本发明中第二方面及其各种实现方式的有益效果，可以参考第一方面及其各种实现方式中的有益效果分析，此处不再赘述。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其它目的、特征和优点能够更明显易懂，以下特举本发明的具体实施方式。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1中的(1)至(3)部分为本发明实施例中光吸收层的三种结构纵向剖视示意图；
图2中(1)和(2)部分为本发明实施例中第一面为受光面时，第一区域在第一面上的两种分布情况示意图；
图3中(1)和(2)部分为本发明实施例中第一面为背光面时，第一区域在第一面上的两种分布情况示意图；
图4中(1)和(2)部分为本发明实施例中第二面为受光面时，第二区域在第二面上的两种分布情况示意图；
图5中(1)和(2)部分为本发明实施例中第二面为背光面时，第二区域在第二面上的两种分布情况示意图；
图6为本发明实施例中第一区域和第二区域在第二面上的分布情况示意图；
图7为本发明实施例提供的太阳能电池的第一种结构的纵向剖视示意图；
图8为本发明实施例提供的太阳能电池的第二种结构的纵向剖视示意图；
图9为本发明实施例提供的太阳能电池的第三种结构的纵向剖视示意图；
图10为本发明实施例提供的太阳能电池的第四种结构的纵向剖视示意图；
图11为本发明实施例提供的太阳能电池的第五种结构的纵向剖视示意图；
图12为本发明实施例提供的太阳能电池的第六种结构的纵向剖视示意图；
图13为本发明实施例提供的太阳能电池的第七种结构的纵向剖视示意图；
图14为本发明实施例提供的太阳能电池的第八种结构的纵向剖视示意图；
图15为本发明实施例提供的太阳能电池的第九种结构的纵向剖视示意图；
图16为本发明实施例提供的太阳能电池的第十种结构的纵向剖视示意图。
附图标记：
11为光吸收层，111为第一面，112为第二面，113为第一区域，114
为第二区域，12为电子传输层，13为空穴传输层，14为第一钝化层，15为第二钝化层，16为第一透明导电层，17为第二透明导电层，18为第一表面钝化层，19为第二表面钝化层，20为第一电极，21为第二电极。
具体实施例
以下，将参照附图来描述本公开的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本公开的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本公开的概念。
在附图中示出了根据本公开实施例的各种结构示意图。这些图并非是按比例绘制的，其中为了清楚表达的目的，放大了某些细节，并且可能省 略了某些细节。图中所示出的各种区域、层的形状以及它们之间的相对大小、位置关系仅是示例性的，实际中可能由于制造公差或技术限制而有所偏差，并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。
在本公开的上下文中，当将一层/元件称作位于另一层/元件“上”时，该层/元件可以直接位于该另一层/元件上，或者它们之间可以存在居中层/元件。另外，如果在一种朝向中一层/元件位于另一层/元件“上”，那么当调转朝向时，该层/元件可以位于该另一层/元件“下”。为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。“若干”的含义是一个或一个以上，除非另有明确具体的限定。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
太阳能作为一种环保可再生能源，近些年受到了越来越多的关注。相应的，基于光电效应的光伏太阳能电池的应用范围也越来越广。但是，现有的太阳能电池包括的空穴传输层大多采用氧化钼等过渡金属氧化物材料制造形成，不利于提升太阳能电池的光电转换效率。下面以硅异质结太阳能电池为例进行说明：
传统的硅异质结太阳能电池为在晶硅基底与掺杂非晶硅薄膜之间插入一层本征非晶硅薄膜的太阳能电池，以利用该本征非晶硅层中的氢原子来钝化晶硅基底表面的悬挂键，降低载流子在晶硅基底表面的复合速率。而上述掺杂非晶硅薄膜具备不超过1.74eV的带隙。在此情况下，对于双面结 构的异质结太阳能电池来说，位于晶硅基底受光面上的掺杂非晶硅薄膜对于500nm以下波段的光具备一定的寄生吸收，从而导致入射至晶硅基底内的光减少，进而阻碍了电池效率的进一步提升。针对于上述技术问题，本领域的技术人员研发出了采用带隙更宽的过渡金属氧化物取代掺杂非晶硅作为选择性接触层。其中，采用具有高功函数的N型过渡金属氧化物作为空穴传输层受到广泛的关注，尤其是采用氧化钼材料制作硅异质结电池中的空穴传输层，可以该硅异质结电池的光电转换效率提升至23.5％。
但是，上述过渡金属氧化物的功函数和导电率等材料特性受氧缺陷的影响较大，并且影响因素并不十分明确，从而导致过渡金属氧化物的材料稳性较差、以及难以通过调整工艺精确调控材料参数。基于此，当采用氧化钼等过渡金属氧化物材料制造硅异质结电池包括的空穴传输层时，不利于提升硅异质结电池的光电转换效率。
为了解决上述技术问题，本发明实施例提供了一种太阳能电池。具体的，从材料方面来讲，本发明实施例提供的太阳能电池可以为钙钛矿太阳能电池，也可以为硅基太阳能电池等。从正、负电极的相对位置方面来讲，本发明实施例提供的太阳能电池可以为双面接触电池，即太阳能电池包括的极性相反的第一电极和第二电极中的一者设置在太阳能电池的受光面一侧，另一者设置在太阳能电池的背光面一侧。或者，太阳能电池也可以为背接触太阳能电池，即太阳能电池包括的极性相反的第一电极和第二电极均设置在太阳能电池的背光面。
如图7至图16所示，本发明实施例提供的太阳能电池包括：光吸收层11、电子传输层12和空穴传输层13。电子传输层12形成在光吸收层11内或形成在光吸收层11上。空穴传输层13形成在光吸收层11上。空穴传输层13的材料包括镍氮化物。
具体来说，上述光吸收层的材料可以根据太阳能电池的种类进行确定。
例如：如图7所示，在本发明实施例提供的太阳能电池为钙钛矿太阳能电池的情况下，光吸收层11的材料为钙钛矿材料。其中，该钙钛矿材料可以是无机钙钛矿材料，也可以是有机钙钛矿材料，还可以是有机-无机杂化钙钛矿材料。例如：光吸收层11的材料可以为CsPbI2Br、MAPbBr3、FAPbI3或Cs1-y-zFAyMAzPbI3-xBrx(其中，FA为甲醚，MA为甲胺，0≤x≤3，0≤y≤1，0≤z≤1，且0≤y+z≤1)等。
又例如：在本发明实施例提供的太阳能电池为硅基太阳能电池的情况下，光吸收层的材料为硅。
从结构方面来讲，光吸收层的厚度可以根据实际需求进行设置，此处不做具体限定。另外，如图1中的(1)部分所示，光吸收层11具有的两个相对的表面可以均为抛光面。或者，如图1中的(2)部分所示，光吸收层11与受光面相对的一面可以为绒面，其与背光面相对的一面可以为抛光面。在此情况下，绒面结构具有陷光作用，因此当光吸收层11与受光面相对的表面为绒面时，可以使得更多的光线折射至光吸收层11内。并且，因抛光面具有相对良好的反射特性，因此在光线达到光吸收层11与背光面相对的表面后可以至少部分被反射回光吸收层11内，被光吸收层11重新利用，从而可以提高太阳能电池的光电转换效率。又或者，如图1中的(3)部分所示，光吸收层11的两个相对的表面也可以均为绒面。此时，在将本发明实施例提供的太阳能电池作为叠层太阳能电池包括的顶电池时，光吸收层11与底电池相接触的一面为绒面，可以使得更多的光线折射至底电池内，提高底电池的光电转换效率。
对于上述电子传输层来说，该电子传输层的材料可以为任一具有传输电子功能的材料。电子传输层的厚度、以及电子传输层在光吸收层内或在光吸收层上的形成范围可以根据太阳能电池的种类、以及实际应用场景设置，只要能够应用至本发明实施例提供的太阳能电池中均可。
对于上述空穴传输层来说，从结构方面来讲，该空穴传输层的厚度、以及空穴传输层在光吸收层上的形成范围可以根据太阳能电池的种类、以及实际应用场景设置，此处不做具体限定。此外，如图7至图13所示，空穴传输层13与电子传输层12也可以分别位于光吸收层11具有的相对两侧。此时，太阳能电池为双面接触太阳能电池。或者，如图14至图16所示，空穴传输层13与电子传输层12可以位于光吸收层11的同一侧。此时，太阳能电池为背接触电池。
从材料方面来讲，空穴传输层的材料包括镍氮化物。该镍氮化物内镍元素的化合价、以及镍氮化物内镍元素和氮元素之间的化学计量比可以根据实际应用场景设置，此处不做具体限定。
另外，除了镍氮化物外，空穴传输层的材料还可以包括哪些材料可以根据实际应用场景确定。
例如：当太阳能电池为异质结太阳能电池、且空穴传输层形成在光吸 收层与背光面相对的一面上时，空穴传输层的材料还可以为P型非晶硅和/或P型微晶硅等。
又例如：当太阳能电池为钙钛矿太阳能电池时，空穴传输层的材料还可以包括2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(可缩写为Sprio-OMeTAD)、2,2,7,7-四(N,N-二对甲苯基)氨基-9,9-螺二芴(可缩写为spiro-TTB)或三氟甘露糖(可缩写为TATM)等。
在一些情况下，如图7至图15所示，本发明实施例提供的太阳能电池还可以包括第一电极20和第二电极21。其中，第一电极20与空穴传输层13欧姆接触，以导出空穴传输层13收集的空穴。第二电极21与电子传输层12欧姆接触，以导出电子传输层12收集的电子。具体的，第一电极20和第二电极21的材料可以为银、铝、铜、镍、金等导电材料。
采用上述技术方案的情况下，在本发明实施例提供的太阳能电池处于工作状态时，光吸收层在吸收光子后会产生电子和空穴对。其中，光吸收层内未发生复合的电子沿靠近电子传输层的方向运动，并由电子传输层导出至相应电极。光吸收层内未发生复合的空穴沿靠近空穴传输层的方向运动，并由空穴传输层导出至相应电极，从而形成光电流。其中，空穴传输层形成在光吸收层上，并起到收集空穴的作用。基于此，当空穴传输层的材料的功函数与光吸收层的材料的功函数相匹配时，可以降低空穴由光吸收层迁移至空穴传输层内的势垒高度，利于空穴的传输。并且，当空穴传输层的材料的电阻率较低时，可以降低空穴由光吸收层迁移至空穴传输层内的阻力，也可以利于空穴的传输。在此情况下，与过渡金属氧化物材料相比，镍氮化物的功函数和电阻率等材料特性更为稳定、且其不易受材料成分和缺陷类型的影响，并且形成镍氮化物过程中的工艺参数调节较为方便，因此在上述空穴传输层的材料包括镍氮化物的情况下，便于根据光吸收层的材料、以及实际应用场景的需求将空穴传输层的电阻率和功函数调整至合适范围的同时，可以确保空穴传输层具有较高、且稳定的空穴传输能力，从而可以解决现有技术中因氧化钼等过渡金属氧化物材料的功函数等材料特性不稳定使得空穴传输层的空穴传输能力较差的问题，提升太阳能电池的光电转换效率。
作为一种可能的实现方式，上述镍氮化物为NixNy。其中，x和y均为大于等于1的正整数、且2≤x+y≤5。在此情况下，上述镍氮化物的物相可以为Ni3N、Ni4N、Ni3N2、Ni2N和NiN等。由此可见，上述镍氮化物的物相 种类较多。并且，不同物相的镍氮化物的对应的功函数或电阻率等材料特性可能不同，因此可以根据不同的实际应用场景选择合适种类物相的镍氮化物、以及各物相的镍氮化物之间的配比，以确保空穴传输层在相应实际应用场景下具有较高的空穴传输能力，提高本发明实施例提供的太阳能电池在不同应用场景下的适用性。另外，上述镍氮化物的物相种类较多，可以降低实际制造过程中为形成具有固定物相的镍氮化物而必须严格要求形成温度、环境压强等条件，可以降低本发明实施例提供的太阳能电池的制造难度。
具体的，上述空穴传输层的材料可以包括具有一种物相的镍氮化物。例如：上述空穴传输层的材料可以仅包括Ni3N。或者，上述空穴传输层的材料也可以包括多种物相的镍氮化物。又例如：上述空穴传输层的材料可以包括Ni3N、Ni3N2和Ni2N。
其中，不同物相的镍氮化物的对应的功函数或电阻率等材料特性可能不同，因此当上述空穴传输层的材料包括至少两种物相的镍氮化物时，各物相的镍氮化物之间的化学计量比可以根据光吸收层的材料、以及实际应用场景设置，此处不做具体限定。
作为一种可能的实现方式，上述镍氮化物的功函数大于等于5eV、且小于等于5.5eV。例如：上述镍氮化物的功函数可以为5eV、5.1eV、5.2eV、5.3eV、5.4eV或5.5eV。在此情况下，大部分钙钛矿材料的功函数约为4.97eV。另外，P型晶体硅材料的功函数约为5至5.2eV。基于此，当镍氮化物的功函数大于等于5eV、且小于等于5.5eV的情况下，利于使得材料包括镍氮化物的空穴传输层的能级可以分别与材料为钙钛矿材料的光吸收层、以及材料为硅的光吸收层的能级相匹配，从而使得该空穴传输层可以作为钙钛矿太阳能电池和硅基太阳能电池包括的空穴传输层，提高本发明实施例提供的太阳能电池在不同应用场景下的适用性。
作为一种可能的实现方式，上述空穴传输层的电阻率为10-5Ωcm至10-1Ωcm。例如：空穴传输层的电阻率可以为10-1Ωcm、10-2Ωcm、10-3Ωcm、10-4Ωcm或10-5Ωcm。此时，空穴传输层的电阻率较低。因电阻率与电导率成反比，故当空穴传输层的电阻率较低时，空穴传输层的电导率较高，可以降低空穴由光吸收层迁移至空穴传输层内的阻力，利于空穴的传输，进而可以进一步提升太阳能电池的光电转换效率。
作为一种可能的实现方式，上述空穴传输层的厚度为2nm至80nm。例 如：上述空穴传输层的厚度可以为2nm、5nm、10nm、20nm、30nm、40nm、50nm、60nm、70nm或80nm。此时，空穴传输层的厚度范围较大，可以降低实际制造过程中为形成具有固定厚度或较小厚度范围的空穴传输层而必须严格要求形成时间、形成温度、环境压强等条件，可以降低本发明实施例提供的太阳能电池的制造难度。
作为一种可能的实现方式，上述空穴传输层的晶态包括非晶相、微晶相和多晶相中的一种或多种。例如：空穴传输层的晶态可以仅为非晶相、微晶相或多晶相。又例如：空穴传输层的晶态可以包括非晶相、微晶相和多晶相中的任意两种，或三种的组合。由此可见，上述空穴传输层的晶态种类较多，可以降低实际制造过程中为形成具有固定晶态的空穴传输层而必须严格要求形成温度、环境压强等条件，可以降低本发明实施例提供的太阳能电池的制造难度。
可以理解的是，晶态是指固态物体存在的占主导地位的形态。而固态物体又可以分为晶体和非晶体这两种存在形式。具体的，晶体是通过结晶过程而形成的具有规则的几何外形的固体。晶体中原子或分子在空间按一定规律周期性重复的排列。具体的，晶体中的单晶相是指结晶体内部的微粒在三维空间呈有规律地、周期性地排列。晶体中的微晶相是指每颗晶粒只由几千个或几万个晶胞并置而成的晶体，从一个晶轴的方向来说这种晶体只重复了约几十个周期。晶体中的多晶相是指由两个以上的同种或异种单晶组成。
另外，与晶体对应的，原子或分子无规则配列、无周期性、无对称性的固体的晶态为非晶相。
由上述内容可知，晶态不同的空穴传输层内原子或分子的排布方式不同。而在材料包括镍氮化物的空穴传输层的晶态不同时，镍氮化物的对应的电阻率等材料特性可能不同，因此可以根据不同的实际应用场景选择形成具有相应晶态的空穴传输层，以确保空穴传输层在相应实际应用场景下具有较高的空穴传输能力，提高本发明实施例提供的太阳能电池在不同应用场景下的适用性。
作为一种可能的实现方式，在上述光吸收层为钙钛矿吸收层的情况下，电子传输层形成在钙钛矿吸收层的一侧，空穴传输层形成在钙钛矿吸收层背离电子传输层的一侧。在此情况下，当光吸收层为钙钛矿光吸收层时，本发明实施例提供的太阳能电池为钙钛矿太阳能电池。基于此，因钙 钛矿材料具有吸光系数高、载流子迁移率和扩散长度大、带隙可调节等一系列优点，故可以进一步提高本发明实施例提供的太阳能电池的光电转换效率。
具体的，当光吸收层为钙钛矿吸收层时，电子传输层可以形成在钙钛矿吸收层与太阳能电池的受光面相对的一面上。空穴传输层形成在钙钛矿吸收层与太阳能电池的背光面相对的一面上。此时，钙钛矿太阳能电池为正式结构。或者，电子传输层可以形成在钙钛矿吸收层与太阳能电池的背光面相对的一面上。空穴传输层形成在钙钛矿吸收层与太阳能电池的受光面相对的一面上。此时，钙钛矿太阳能电池为反式结构。
另外，当光吸收层为钙钛矿吸收层时，电子传输层的材料可以根据实际需求进行设置。例如：电子传输层的材料可以为二氧化钛、氧化锌、氧化锡和富勒烯中的一种或多种。
作为另一种可能的实现方式，如图8至图15所示，上述光吸收层11为硅基底的情况下，上述太阳能电池还包括位于空穴传输层13与硅基底之间的第一钝化层14。可理解的是，当光吸收层11为硅基底时，本发明实施例提供的太阳能电池为硅基太阳能电池。并且，太阳能电池还包括位于空穴传输层13与硅基底之间的第一钝化层14，该第一钝化层14与空穴传输层13可以形成异质结构，因此该情况下本发明实施例提供的太阳能电池为硅基异质结太阳能电池。另外，第一钝化层14与空穴传输层13形成的异质结构可以实现优异的界面钝化和载流子的选择性收集，从而可以进一步提高本发明实施例提供的太阳能电池的光电转换效率。
具体的，上述第一钝化层的材料和厚度可以根据实际需求进行设置。示例性的，第一钝化层的材料可以包括非晶硅、氢化非晶硅和掺碳非晶硅中的一种或多种。例如：第一钝化层的材料可以仅为非晶硅、氢化非晶硅和掺碳非晶硅中的一种。又例如：第一钝化层的材料可以包括非晶硅、氢化非晶硅和掺碳非晶硅中的任意两种，或者三种。
其中，当第一钝化层的材料包括非晶硅、氢化非晶硅和掺碳非晶硅中的至少两种时，各种材料之间的化学计量比、以及各种材料在第一钝化层内的分布情况，可以根据实际需求进行设置。例如：当第一钝化层的材料包括非晶硅和氢化非晶硅的情况下，沿着光吸收层的厚度方向，第一钝化层可以包括层叠设置在一起的第一钝化膜和第二钝化膜。第一钝化膜的材料为非晶硅，第二钝化膜的材料为氢化非晶硅。又例如：第一钝化层是由 非晶硅和氢化非晶硅混合而成的混合材料层。
另外，当光吸收层为硅基底时，电子传输层的材料可以为硅、锗硅、锗、掺杂碳化硅、砷化镓等半导体材料。
再者，当光吸收层为硅基底时，电子传输层和空穴传输层具体形成在光吸收层的哪一侧可以根据太阳能电池的种类进行确定。
例如：如图14至图16所示，在太阳能电池为背接触太阳能电池的情况下，上述光吸收层11具有相对的第一面和第二面。沿着平行于第二面的方向，第二面具有交替设置的第一区域113和第二区域114。电子传输层12形成在第一区域113内或第一区域113上。沿着远离光吸收层11的方向，第一钝化层14和空穴传输层13依次形成在第二区域114上。
该情况下，光吸收层的第一面与太阳能电池的受光面相对，其具有的第二面与太阳能电池的背光面相对。另外，如图14所示，电子传输层12可以为形成在第一区域113内的N型掺杂半导体区。或者，如图15所示，电子传输层12还可以为形成在第一区域113上的N型掺杂半导体层。此时，第二面还可以具有介于每个第一区域113和第二区域114之间的隔离区域，以使得电子传输层12和空穴传输层13隔离开，抑制光吸收层11内产生的电子和空穴在电子传输层12和空穴传输层13的横向交界处发生复合，从而进一步提升太阳能电池的光电转换效率。
又例如：在太阳能电池为双面接触太阳能电池的情况下，上述光吸收层具有相对的第一面和第二面。如图2中的(1)和(2)部分所示，第一面111具有第一区域113，第一区域113为第一面111具有的局部区域或全局区域。如图3中的(1)和(2)部分所示，第二面112具有第二区域114，第二区域114为第二面112具有的局部区域或全局区域。在此情况下，如图8至图13所示，电子传输层12形成在第一区域113内或第一区域113上。沿着远离光吸收层11的方向，第一钝化层14和空穴传输层13依次形成在第二区域114上。
该情况下，如图2与图5中的(1)和(2)部分所示，光吸收层11的第一面111可以与太阳能电池的受光面相对，其第二面112与太阳能电池的背光面相对。或者，如图3与图4中的(1)和(2)部分所示，光吸收层11的第一面111也可以与太阳能电池的背光面相对，其第二面112与太阳能电池的受光面相对。
另外，如图2与图3中的(1)部分所示，当第一区域113为第一面111 具有的全局区域时，第一区域113的边界与第一面111的边界重合。此时，如图8和图9所示，电子传输层12可以整层设置在第一面内或第一面上。相应的，沿着平行于第一面的方向，光吸收层11各部分与电子传输层12之间的距离大致相同，可以使得光吸收层11各部分内未发生复合的电子传导至电子传输层12的路径长度大致相同，进而使得光吸收层11各部分内未发生复合的电子均能够被电子传输层12快速导出，降低复合速率。
如图2与图3中的(2)部分所示，当第一区域113为第一面111具有的局部区域时，第一区域113的边界位于第一面111的边界内。此时，第一面111可以仅具有一个第一区域113，也可以具有多个第一区域113。相应的，如图10和图11所示，形成在第一区域113内或形成在第一区域113上的电子传输层12为局部接触层。基于此，当电子传输层12的材料为N型掺杂多晶硅等具有吸光特性的材料、且第一面与受光面相对时，第一区域113为局部区域可以减小电子传输层12对太阳光的吸收，使得更多的太阳光可以透射至光吸收层11内，进一步提高太阳能电池的光电转换效率。
同理，如图4与图5中的(1)部分所示，当第二区域114为第二面112具有的全局区域时，第二区域114的边界与第二面112的边界重合。如图4与图5中的(2)部分所示，当第二区域114为第二面112具有的局部区域时，第二区域114的边界位于第二面112的边界内。此时，第二面112可以仅具有一个第二区域114，也可以具有多个第二区域114。相应的，如图9所示，形成在第二区域114上的第一钝化层14和空穴传输层13可以构成局部钝化接触结构。其中，第二区域114分别为第二面具有的局部区域或全局区域具有的有益效果可以参考前文所述的第一区域113为第一面具有的局部区域或全局区域的有益效果分析，此处不再赘述。
在一种示例中，如图12和图13所示，当电子传输层12形成在硅基底上时，上述太阳能电池还包括位于电子传输层12与硅基底之间的第二钝化层15。在此情况下，第二钝化层15可以至少对硅基底与电子传输层12相接触的部分表面进行钝化，降低载流子在二者的接触处发生复合的速率。并且，形成在第二钝化层15上的电子传输层12能够实现对硅基底内的电子进行选择性收集，以进一步提高本发明实施例提供的太阳能电池的光电转换效率。
具体的，该第二钝化层的材料可以根据电子传输层的材料进行确定。
例如：上述电子传输层为N型非晶硅层、N型微晶硅层、N型非晶硅与 微晶硅的混合层或N型过渡金属化合物层。此时，电子传输层和第二钝化层可以构成异质结构。基于此，第二钝化层为本征非晶硅层。
又例如：上述电子传输层为N型多晶硅层。此时，电子传输层和第二钝化层可以构成隧穿钝化接触结构。基于此，第二钝化层为隧穿钝化层。其中，隧穿钝化层的材料可以任一具有隧穿钝化作用的介电材料。例如：隧穿钝化层的材料可以包括氧化硅、氧化铝、氧化钛、二氧化铪、氧化镓、五氧化二钽、五氧化铌、氮化硅、碳氮化硅、氮化铝、氮化钛、氮碳化钛中的一种或多种。
采用上述技术方案的情况下，如前文所述，当电子传输层为N型非晶硅层、N型微晶硅层、N型非晶硅与微晶硅的混合层或N型过渡金属化合物层、且第二钝化层为本征非晶硅层时，电子传输层和第二钝化层可以构成异质结构。另外，当电子传输层为N型多晶硅层、且第二钝化层为隧穿钝化层时，电子传输层和第二钝化层可以构成隧穿钝化接触结构。由此可见，当电子传输层为电子选择性接触层时，可以具有以上两种可选方案，可以根据实际应用场景要求选择合适的电子传输层和第二钝化层的材料，以提高本发明实施例提供的太阳能电池在不同应用场景下的适用性。
作为一种可能的实现方式，如图7至图15所示，本发明实施例提供的太阳能电池还包括形成在光吸收层11靠近受光面一侧的第一表面钝化层18，以降低光吸收层11靠近受光面一侧的载流子复合速率，进一步提升太阳能电池的光电转换效率。
具体的，第一表面钝化层的具体形成位置可以根据电子传输层和空穴传输层的形成位置进行确定。例如：如图7所示，空穴传输层13整层设置在光吸收层11与受光面相对的一侧时，第一表面钝化层18形成在空穴传输层13上。又例如：如图9所示，在空穴传输层13局部设置在光吸收层11与受光面相对的一侧、且太阳能电池还包括第一钝化层14时，第一表面钝化层18形成在第一钝化层14上。
作为一种可能的实现方式，如图7至图15所示，本发明实施例提供的太阳能电池还包括形成在光吸收层11靠近背光面一侧的第二表面钝化层19，以降低光吸收层11靠近受光面一侧的载流子复合速率，进一步提升太阳能电池的光电转换效率。
具体的，第二表面钝化层的具体形成位置可以根据电子传输层和空穴传输层的形成位置进行确定。例如：如图7所示，电子传输层12整层设置 在光吸收层11与背光面相对的一侧时，第二表面钝化层19形成在电子传输层12上。又例如：如图10所示，在电子传输层12局部设置在光吸收层11与受光面相对的一侧时，第二表面钝化层19直接形成在光吸收层11与背光面相对的表面上。
另外，上述第一表面钝化层和第二表面钝化层的厚度和材料可以根据实际需求进行设置，此处不做具体限定。例如：第一表面钝化层和第二表面钝化层的材料可以为氮化硅、氮氧化硅或氟化镁等材料。
作为一种可能的实现方式，如图7和图8所示，太阳能电池还可以包括形成在空穴传输层13上的第一透明导电层16，以利于导出空穴。
作为一种可能的实现方式，如图7和图8所示，太阳能电池还可以包括形成在电子传输层12上的第二透明导电层17，以利于导出电子。
其中，上述第一透明导电层和第二透明导电层的厚度和材料可以根据实际需求进行设置，此处不做具体限定。例如：第一透明导电层和第二透明导电层的材料可以为掺氟氧化锡、掺铝氧化锌、掺锡氧化铟、掺钨氧化铟、掺钼氧化铟、掺铈氧化铟和氢氧化铟等。其中，第一透明导电层和第二透明导电层的功函数可以相同，也可以不同。当二者的功函数不同时，可以根据电子传输层和空穴传输层的功函数分别确定第一透明导电层和第二透明导电层各自匹配的功函数，从而利于将太阳能电池中空穴传输层与第一电极之间的接触势垒、以及电子传输层与第二电极之间的接触势垒同时降低至较小的目标范围内，进一步提高太阳能电池的光电转换效率。
本发明实施例还提供了一种光伏组件，该光伏组件包括上述实施例提供的太阳能电池。
与现有技术相比，本发明实施例提供的光伏组件的有益效果，可以参考前文所述的上述实施例提供的太阳能电池中的有益效果分析，此处不再赘述。
在以上的描述中，对于各层的构图、刻蚀等技术细节并没有做出详细的说明。但是本领域技术人员应当理解，可以通过各种技术手段，来形成所需形状的层、区域等。另外，为了形成同一结构，本领域技术人员还可以设计出与以上描述的方法并不完全相同的方法。另外，尽管在以上分别描述了各实施例，但是这并不意味着各个实施例中的措施不能有利地结合使用。
以上对本公开的实施例进行了描述。但是，这些实施例仅仅是为了说 明的目的，而并非为了限制本公开的范围。本公开的范围由所附权利要求及其等价物限定。不脱离本公开的范围，本领域技术人员可以做出多种替代和修改，这些替代和修改都应落在本公开的范围之内。

Claims (12)

  1. 一种太阳能电池，其特征在于，包括：光吸收层，
    电子传输层，形成在所述光吸收层内或形成在所述光吸收层上；
    空穴传输层，形成在所述光吸收层上；所述空穴传输层的材料包括镍氮化物。
  2. 根据权利要求1所述的太阳能电池，其特征在于，所述镍氮化物为NixNy；其中，x和y均为大于等于1的正整数、且2≤x+y≤5；和/或，
    所述镍氮化物的功函数大于等于5eV、且小于等于5.5eV；和/或，
    所述空穴传输层的电阻率为10-5Ωcm至10-1Ωcm。
  3. 根据权利要求1所述的太阳能电池，其特征在于，所述空穴传输层的厚度为2nm至80nm。
  4. 根据权利要求1所述的太阳能电池，其特征在于，所述空穴传输层的晶态包括非晶相、微晶相和多晶相中的一种或多种。
  5. 根据权利要求1～4任一项所述的太阳能电池，其特征在于，所述光吸收层为钙钛矿吸收层；
    所述电子传输层形成在所述钙钛矿吸收层的一侧，所述空穴传输层形成在所述钙钛矿吸收层背离所述电子传输层的一侧。
  6. 根据权利要求1～4任一项所述的太阳能电池，其特征在于，所述光吸收层为硅基底；
    所述太阳能电池还包括位于所述空穴传输层与所述硅基底之间的第一钝化层。
  7. 根据权利要求6所述的太阳能电池，其特征在于，所述第一钝化层的材料包括非晶硅、氢化非晶硅和掺碳非晶硅中的一种或多种。
  8. 根据权利要求6所述的太阳能电池，其特征在于，所述光吸收层具有相对的第一面和第二面；沿着平行于所述第二面的方向，所述第二面具有交替设置的第一区域和第二区域；
    所述电子传输层形成在所述第一区域内或所述第一区域上；
    沿着远离所述光吸收层的方向，所述第一钝化层和所述空穴传输层依次形成在所述第二区域上。
  9. 根据权利要求6所述的太阳能电池，其特征在于，所述光吸收层具有相对的第一面和第二面；所述第一面具有第一区域，所述第一区域 为所述第一面具有的局部区域或全局区域；所述第二面具有第二区域，所述第二区域为所述第二面具有的局部区域或全局区域；
    所述电子传输层形成在所述第一区域内或所述第一区域上；
    沿着远离所述光吸收层的方向，所述第一钝化层和所述空穴传输层依次形成在所述第二区域上。
  10. 根据权利要求6所述的太阳能电池，其特征在于，当所述电子传输层形成在所述硅基底上时，所述太阳能电池还包括位于所述电子传输层与所述硅基底之间的第二钝化层。
  11. 根据权利要求10所述的太阳能电池，其特征在于，所述电子传输层为N型非晶硅层、N型微晶硅层、N型非晶硅与微晶硅的混合层或N型过渡金属化合物层；所述第二钝化层为本征非晶硅层；或，
    所述电子传输层为N型多晶硅层；所述第二钝化层为隧穿钝化层。
  12. 一种光伏组件，其特征在于，包括如权利要求1～11任一项所述的太阳能电池。
PCT/CN2023/099722 2022-09-27 2023-06-12 一种太阳能电池及光伏组件 WO2024066478A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202211185760.5A CN117832291A (zh) 2022-09-27 2022-09-27 一种太阳能电池及光伏组件
CN202211185760.5 2022-09-27

Publications (1)

Publication Number Publication Date
WO2024066478A1 true WO2024066478A1 (zh) 2024-04-04

Family

ID=90475906

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/099722 WO2024066478A1 (zh) 2022-09-27 2023-06-12 一种太阳能电池及光伏组件

Country Status (2)

Country Link
CN (1) CN117832291A (zh)
WO (1) WO2024066478A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105206749A (zh) * 2015-08-31 2015-12-30 中国电子科技集团公司第四十八研究所 钙钛矿太阳能电池及其制备工艺
CN111564560A (zh) * 2020-07-14 2020-08-21 杭州纤纳光电科技有限公司 一种钙钛矿太阳能电池及其制备方法
CN112117379A (zh) * 2019-06-21 2020-12-22 北京宏泰创新科技有限公司 一种双钝化层钙钛矿太阳能电池
KR20220092089A (ko) * 2020-12-24 2022-07-01 한화솔루션 주식회사 페로브스카이트 광전 변환 소자 제조방법, 이를 통해 제조된 페로브스카이트광전변환 소자, 및 이를 포함하는 태양전지
CN114744052A (zh) * 2020-12-23 2022-07-12 泰州隆基乐叶光伏科技有限公司 太阳能电池及光伏组件
WO2022174049A1 (en) * 2021-02-12 2022-08-18 First Solar, Inc. Materials and methods for hole transport layers in perovskite photovoltaic devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105206749A (zh) * 2015-08-31 2015-12-30 中国电子科技集团公司第四十八研究所 钙钛矿太阳能电池及其制备工艺
CN112117379A (zh) * 2019-06-21 2020-12-22 北京宏泰创新科技有限公司 一种双钝化层钙钛矿太阳能电池
CN111564560A (zh) * 2020-07-14 2020-08-21 杭州纤纳光电科技有限公司 一种钙钛矿太阳能电池及其制备方法
CN114744052A (zh) * 2020-12-23 2022-07-12 泰州隆基乐叶光伏科技有限公司 太阳能电池及光伏组件
KR20220092089A (ko) * 2020-12-24 2022-07-01 한화솔루션 주식회사 페로브스카이트 광전 변환 소자 제조방법, 이를 통해 제조된 페로브스카이트광전변환 소자, 및 이를 포함하는 태양전지
WO2022174049A1 (en) * 2021-02-12 2022-08-18 First Solar, Inc. Materials and methods for hole transport layers in perovskite photovoltaic devices

Also Published As

Publication number Publication date
CN117832291A (zh) 2024-04-05

Similar Documents

Publication Publication Date Title
US11329172B2 (en) Solar cell
JP6975368B1 (ja) 太陽電池及び太陽電池モジュール
CN110707159A (zh) 一种正背面全面积接触钝化的p型晶硅太阳电池及其制备方法
EP4095930B1 (en) Solar cell
CN114038921B (zh) 太阳能电池及光伏组件
JP2016046525A (ja) 太陽電池及びその製造方法
CN213905376U (zh) 叠层太阳能电池
US11522091B2 (en) Solar cell
CN116259679A (zh) 太阳能电池及光伏组件
WO2021189860A1 (zh) 叠层光伏器件及生产方法
CN117059690A (zh) 太阳能电池及光伏组件
CN115172602B (zh) 一种掺杂金属氧化物复合层结构
CN216120311U (zh) 一种n型双面钝化接触电池结构
WO2024066478A1 (zh) 一种太阳能电池及光伏组件
CN115274868B (zh) 太阳能电池及光伏组件
KR20150052415A (ko) 태양전지
CN111900228A (zh) 一种面向晶硅太阳电池的电子选择性接触
CN217655887U (zh) 一种太阳能叠层电池
WO2023024620A1 (zh) 一种叠层光伏器件
CN114883425A (zh) 一种晶硅异质结太阳电池的迎光面结构
CN115863456A (zh) 一种钙钛矿/TOPCon叠层太阳能电池
CN117690984A (zh) 电子钝化接触结构及其制备方法、太阳能电池
CN117727809A (zh) 太阳能电池及光伏组件
CN115000188A (zh) 一种用于晶硅异质结太阳电池迎光面的局域接触结构
CN115148831A (zh) 一种光伏器件用电子选择性传输材料及其应用

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23869727

Country of ref document: EP

Kind code of ref document: A1