WO2024055688A1 - Réseau de mémoire ferroélectrique, son procédé de fabrication, mémoire et dispositif électronique - Google Patents
Réseau de mémoire ferroélectrique, son procédé de fabrication, mémoire et dispositif électronique Download PDFInfo
- Publication number
- WO2024055688A1 WO2024055688A1 PCT/CN2023/103464 CN2023103464W WO2024055688A1 WO 2024055688 A1 WO2024055688 A1 WO 2024055688A1 CN 2023103464 W CN2023103464 W CN 2023103464W WO 2024055688 A1 WO2024055688 A1 WO 2024055688A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- ferroelectric
- electrode
- memory array
- ferroelectric film
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 165
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 116
- 239000003990 capacitor Substances 0.000 claims abstract description 82
- 239000013078 crystal Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 46
- 229910052760 oxygen Inorganic materials 0.000 claims description 39
- 239000001301 oxygen Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 28
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 25
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 25
- -1 oxygen ions Chemical class 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 9
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 claims description 8
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 7
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000005669 field effect Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 132
- 238000010586 diagram Methods 0.000 description 33
- 230000010287 polarization Effects 0.000 description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 29
- 238000003860 storage Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 18
- 230000005684 electric field Effects 0.000 description 17
- 230000009286 beneficial effect Effects 0.000 description 10
- 238000013508 migration Methods 0.000 description 9
- 230000005012 migration Effects 0.000 description 9
- 238000005036 potential barrier Methods 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- FIWXUAGPOBLSIJ-UHFFFAOYSA-N [Hf].[Zr].[O] Chemical compound [Hf].[Zr].[O] FIWXUAGPOBLSIJ-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000619 electron energy-loss spectrum Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910004491 TaAlN Inorganic materials 0.000 description 2
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- 229910008482 TiSiN Inorganic materials 0.000 description 2
- 229910008807 WSiN Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000027311 M phase Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 235000013322 soy milk Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Abstract
La présente demande se rapporte au domaine technique des semi-conducteurs. La demande concerne un réseau de mémoire ferroélectrique, son procédé de fabrication, une mémoire et un dispositif électronique, qui visent à améliorer l'uniformité et la fiabilité des performances de mémoires. Le réseau de mémoire ferroélectrique peut être d'une structure bidimensionnelle ou peut également être d'une structure tridimensionnelle, et comprend une pluralité d'unités de mémoire agencées dans un mode de réseau ; chaque unité de mémoire comprend un condensateur ferroélectrique et un transistor ; chaque condensateur ferroélectrique comprend une première électrode et une seconde électrode qui sont disposées de manière opposée, et un film ferroélectrique disposé entre la première électrode et la seconde électrode ; la phase cristalline des films ferroélectriques comprend une phase tétragonale ; et chaque film ferroélectrique comprend une première couche et une seconde couche qui sont en contact l'une avec l'autre, la première couche et/ou la seconde couche comprenant un matériau ferroélectrique, et la constante de réseau de la première couche étant différente de la constante de réseau de la seconde couche. Le réseau de mémoire ferroélectrique peut être utilisé pour des mémoires ferroélectriques, des mémoires à transistor à effet de champ ferroélectrique ou des mémoires à jonction tunnel ferroélectrique, afin de lire et écrire des données.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211115524.6A CN117769257A (zh) | 2022-09-14 | 2022-09-14 | 铁电存储阵列及其制备方法、存储器、电子设备 |
| CN202211115524.6 | 2022-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2024055688A1 true WO2024055688A1 (fr) | 2024-03-21 |
Family
ID=90274157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2023/103464 WO2024055688A1 (fr) | 2022-09-14 | 2023-06-28 | Réseau de mémoire ferroélectrique, son procédé de fabrication, mémoire et dispositif électronique |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN117769257A (fr) |
| WO (1) | WO2024055688A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627920A (zh) * | 2020-06-02 | 2020-09-04 | 湘潭大学 | 一种铁电存储单元 |
| US20200312950A1 (en) * | 2019-03-29 | 2020-10-01 | Intel Corporation | Mfm capacitor and process for forming such |
| CN114256418A (zh) * | 2020-09-21 | 2022-03-29 | 三星电子株式会社 | 电容器和包括电容器的dram装置 |
| US20220254795A1 (en) * | 2021-02-08 | 2022-08-11 | Imec Vzw | Ferroelectric device based on hafnium zirconate and method of fabricating the same |
| CN114927526A (zh) * | 2022-06-02 | 2022-08-19 | 北京超弦存储器研究院 | 一种铁电存储器及其铁电电容和制备方法 |
-
2022
- 2022-09-14 CN CN202211115524.6A patent/CN117769257A/zh active Pending
-
2023
- 2023-06-28 WO PCT/CN2023/103464 patent/WO2024055688A1/fr unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200312950A1 (en) * | 2019-03-29 | 2020-10-01 | Intel Corporation | Mfm capacitor and process for forming such |
| CN111627920A (zh) * | 2020-06-02 | 2020-09-04 | 湘潭大学 | 一种铁电存储单元 |
| CN114256418A (zh) * | 2020-09-21 | 2022-03-29 | 三星电子株式会社 | 电容器和包括电容器的dram装置 |
| US20220254795A1 (en) * | 2021-02-08 | 2022-08-11 | Imec Vzw | Ferroelectric device based on hafnium zirconate and method of fabricating the same |
| CN114927526A (zh) * | 2022-06-02 | 2022-08-19 | 北京超弦存储器研究院 | 一种铁电存储器及其铁电电容和制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117769257A (zh) | 2024-03-26 |
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