WO2024045270A1 - 一种叠层结构及其制备方法、图形转移方法、返工方法 - Google Patents

一种叠层结构及其制备方法、图形转移方法、返工方法 Download PDF

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WO2024045270A1
WO2024045270A1 PCT/CN2022/124813 CN2022124813W WO2024045270A1 WO 2024045270 A1 WO2024045270 A1 WO 2024045270A1 CN 2022124813 W CN2022124813 W CN 2022124813W WO 2024045270 A1 WO2024045270 A1 WO 2024045270A1
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layer
bottom anti
reflective
substrate
etched
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PCT/CN2022/124813
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English (en)
French (fr)
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贺晓彬
李亭亭
杨涛
刘金彪
李俊峰
罗军
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中国科学院微电子研究所
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Publication of WO2024045270A1 publication Critical patent/WO2024045270A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Definitions

  • the invention relates to the field of semiconductor manufacturing, and in particular to a laminated structure and its preparation method, pattern transfer method and rework method.
  • the stacked structure consisting of a spin-coated organic carbon layer (Spin on Carbon, SOC) and a silicon-containing Bottom Anti-Reflection Coating (Si BARC) is widely used in processes below 32nm.
  • SOC spin on Carbon
  • Si BARC silicon-containing Bottom Anti-Reflection Coating
  • the photoresist pattern is first used as a mask to etch the Si BARC layer (very thin), and then the Si BARC layer is used as a mask to etch the SOC.
  • Si BARC has an extremely high etching selectivity for SOC, so a very thin Si BARC layer can be used to transfer patterns to a very thick SOC.
  • the SOC+Si BARC+PR photoresist
  • the SOC+Si BARC+PR stacked structure needs to be removed.
  • dry degumming is first used to remove the PR on the top layer.
  • the present invention provides a laminated structure.
  • a peeling layer that can be etched and removed by wet method under the bottom anti-reflective structure, not only can pattern transfer be achieved, but also when needed During rework, the substrate can be separated by removing the peeling layer by wet method, which greatly reduces the difficulty of rework and does not cause damage to the substrate, thereby avoiding the formation of defects.
  • Another object of the present invention is to provide a method for preparing the above-mentioned laminated structure.
  • Another object of the present invention is to provide a graphics transfer method.
  • Another object of the present invention is to provide a reworking method.
  • the present invention provides the following technical solutions.
  • a laminated structure including:
  • a bottom anti-reflective structure is provided on the peeling layer.
  • the invention also provides a method for preparing the laminated structure, which includes the following steps:
  • release layer on the substrate, the release layer being capable of being etched and removable by a wet method
  • a bottom anti-reflective structure is formed on the peeling layer.
  • the invention also provides a graphics transfer method, which includes the following steps:
  • the release layer can be etched and removed by wet method
  • the bottom anti-reflective structure and the stripping layer are etched.
  • the invention also provides a rework method, which includes the following steps:
  • the substrate is separated by wet removal of the release layer from the structure obtained by the pattern transfer method described above.
  • the present invention provides a laminated structure.
  • a peeling layer that can be etched and removed by wet method under the bottom anti-reflective structure not only can pattern transfer be realized, but also the peeling layer can be removed by wet method when rework is required.
  • the substrate can be separated, greatly reducing the difficulty of rework, and not causing damage to the substrate, thereby avoiding the formation of defects.
  • Figures 1-3 are schematic diagrams of the laminated structure of the present invention.
  • 100 is the peeling layer
  • 200 is the bottom anti-reflective structure
  • 201 is the organic bottom anti-reflective layer
  • 202 is the silicon-containing bottom anti-reflective layer
  • 300 is the photoresist layer.
  • a layer/element when referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present between them. element. Additionally, if one layer/element is "on” another layer/element in one orientation, then the layer/element can be "beneath" the other layer/element when the orientation is reversed.
  • the present invention provides an improved stacked structure.
  • Figure 1 shows a schematic diagram of the laminated structure of the present invention.
  • the laminated structure of the present invention includes a peeling layer 100 that can be etched and removed by wet method; and a bottom anti-reflective structure 200 disposed on the peeling layer 100 .
  • the inventor By arranging a peeling layer 100 that can be etched and removed by wet method under the bottom anti-reflective structure 200, the inventor not only realizes pattern transfer, but also when rework is required, the peeling layer 100 can be separated by wet method. substrate, greatly reducing the difficulty of rework.
  • the stripping layer 100 may be photoresist or other substances that can be etched and removed by wet methods. More preferably, the peeling layer 100 may be high temperature resistant photoresist, LOR (lift-extist) photoresist or polyimide.
  • the peeling layer 100 in order to ensure that the peeling layer 100 can be peeled off well, and in order to ensure that the peeling layer 100 can be etched quickly after etching the organic bottom anti-reflective layer 201, the peeling layer should not be too thin or too thin. Too thick.
  • the thickness of the release layer 100 may be 30-100 nm.
  • the thickness of the release layer 100 may be 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, or 100 nm.
  • the thickness of the peeling layer 100 may be 40-60 nm.
  • the bottom anti-reflective structure 200 may be a conventional stacked structure used for photolithography.
  • the bottom anti-reflective structure 200 includes in order from bottom to top: an organic bottom anti-reflective layer 201 and a silicon-containing bottom anti-reflective layer 202 .
  • the organic bottom anti-reflective layer 201 may be a spin-coated organic carbon layer (SOC).
  • SOC spin-coated organic carbon layer
  • the thickness of the organic bottom anti-reflective layer 201 may be 100-200 nm, such as 100-150 nm.
  • the material of the silicon-containing bottom anti-reflective layer 202 can be organic siloxane, propylene glycol methyl ether acetate or other silicon-containing organic matter.
  • the thickness of the silicon-containing bottom anti-reflective layer 202 may be 10-50 nm, such as 30-40 nm.
  • the stacked structure may further include: a photoresist layer 300 disposed on the bottom anti-reflective structure 200 .
  • the thickness of the photoresist layer 300 may be 50-150 nm, such as 80-120 nm.
  • the invention also provides a method for preparing the laminated structure, which specifically includes the following steps.
  • a substrate is provided.
  • a release layer 100 is formed on the substrate, and the release layer 100 can be etched and removed by a wet method.
  • the release layer 100 may be formed by spin coating.
  • the bottom anti-reflective structure 200 is formed on the peeling layer 100 .
  • the bottom anti-reflective structure 200 includes in order from bottom to top: an organic bottom anti-reflective layer 201 and a silicon-containing bottom anti-reflective layer 202.
  • the present invention is not particularly limited to the formation method of the organic bottom anti-reflective layer 201 and the silicon-containing bottom anti-reflective layer 202. Any method commonly used in this field can be used in the present invention.
  • the invention also provides a graphics transfer method, which specifically includes the following steps.
  • a substrate is provided.
  • a release layer 100 is formed on the substrate, and the release layer 100 can be etched and removed by a wet method.
  • the bottom anti-reflective structure 200 is formed on the peeling layer 100 .
  • a photoresist layer 300 is formed on the bottom anti-reflective structure 200 and photolithography is performed to obtain a patterned photoresist layer 300 .
  • the bottom anti-reflective structure 200 and the stripping layer 100 are etched.
  • the etching in the present invention may be dry etching, such as plasma etching.
  • the bottom anti-reflective structure 200 includes in order from bottom to top: an organic bottom anti-reflective layer 201 and a silicon-containing bottom anti-reflective layer 202.
  • the pattern transfer method includes: using the patterned photoresist layer 300 as a mask, etching the silicon-containing bottom anti-reflective layer 202, and then using the silicon-containing bottom anti-reflective layer 202 as a mask, etching the organic bottom anti-reflective layer. 201 and peel layer 100.
  • the patterned stripping layer can be used as a mask to continue etching the substrate to achieve pattern transfer.
  • the pattern transfer method of the present invention can realize the transfer of photolithographic patterns from top to bottom, and the accuracy of pattern transfer is high.
  • the invention also provides a rework method, which includes the following steps.
  • the release layer 100 in the structure obtained by the above-mentioned pattern transfer method is wet-removed to separate the substrate.
  • the silicon-containing bottom anti-reflective layer 202 is an anti-reflective coating with a high silicon content, it cannot be removed by dry method and is not easy to rework. Therefore, the stripping layer 100 is removed by wet method, and the organic bottom anti-reflective layer 201 and the silicon-containing bottom anti-reflective layer are separated. Layer 202 is separated from the substrate.
  • wet removal includes: immersing the structure obtained by the above pattern transfer method in a degumming liquid.
  • the degumming liquid can be one or more of N-methylpyrrolidone (NMP), sulfuric acid-hydrogen peroxide mixed solution, and acetone.
  • NMP N-methylpyrrolidone
  • the degumming liquid can also be other organic degumming liquids commonly used in this field, and the present invention is not particularly limited to this.
  • the rework method of the present invention can easily separate the substrate, greatly reducing the difficulty of rework, and will not cause damage to the substrate, thereby avoiding the formation of defects.
  • Polyimide was spin-coated on the substrate to form a peeling layer 100 with a thickness of 80 nm.
  • a 130 nm spin-coated organic carbon layer (SOC) and a 35 nm silicon-containing bottom anti-reflective layer (Si BARC) are sequentially formed on the peeling layer 100 by a spin coating method to obtain a stacked structure.
  • a photoresist was spin-coated on the silicon-containing bottom anti-reflective layer of the laminated structure prepared in Example 1 to form a 100 nm photoresist layer 300 . Then, immersion photolithography is performed to obtain a patterned photoresist layer 300. Then, using the patterned photoresist layer 300 as a mask, the silicon-containing bottom anti-reflective layer 202 is etched. Then, the silicon-containing bottom anti-reflective layer 202 is used as a mask to etch the organic bottom anti-reflective layer 201 and the stripping layer 100 to realize the transfer of the pattern from top to bottom.
  • Example 2 The structure prepared in Example 2 was soaked in N-methylpyrrolidone until the substrate was completely peeled off, and rework was completed.

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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
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Abstract

一种叠层结构，叠层结构的制备方法、图形转移方法和返工方法，通过在底部抗反射结构（200）下方设置能够被刻蚀并且能够通过湿法去除的剥离层（100），不仅可以实现图形转移，而且当需要返工时，通过湿法去除剥离层（100），即可分离出衬底，大大降低返工难度，并且不对衬底造成损伤，从而避免形成缺陷。

Description

一种叠层结构及其制备方法、图形转移方法、返工方法 技术领域
本发明涉及半导体制造领域，具体涉及一种叠层结构及其制备方法、图形转移方法、返工方法。
背景技术
由旋涂的有机碳层(Spin on Carbon，SOC)和含硅底部抗反射层(Silicon-containing BottomAnti-Reflection Coating，Si BARC)组成的叠层结构被广泛应用于32nm以下制程工艺中，使用该叠层结构的主要原因是随着光刻尺寸越来越小，光刻胶的厚度也越来越薄，这个厚度的光刻胶在后续的刻蚀工艺中会很快消耗完，无法起到刻蚀阻挡层的作用。因此需要使用SOC+Si BARC叠层结构来进行光刻胶图形传递转移。在工艺中首先以光刻胶图形为掩模，刻蚀Si BARC层(很薄)，再以Si BARC层为掩模，刻蚀SOC。其中，Si BARC对SOC的刻蚀选择比极高，因此可以用很薄的Si BARC层将图形转移到很厚的SOC上。然而，当图形转移完成后，需要返工时，由于衬底上存在SOC+Si BARC+PR(光刻胶)叠层结构，导致返工难以进行，原因如下。为了返工，需要去除SOC+Si BARC+PR叠层结构，一般先用干法去胶去除顶层的PR，但在去胶过程中，氧等离子体会穿过Si BARC损伤到下面的SOC。之后需要用干法刻蚀去除Si BARC，在去除过程中，SOC已损失的区域会对衬底造成损伤， 形成缺陷。
因此，需要开发一种便于光刻返工的叠层结构。
发明内容
为了解决现有技术中存在的问题，本发明提供一种叠层结构，通过在底部抗反射结构下方设置能够被刻蚀并且能够通过湿法去除的剥离层，不仅可以实现图形转移，而且当需要返工时，通过湿法去除剥离层，即可分离出衬底，大大降低返工难度，并且不对衬底造成损伤，从而避免形成缺陷。
本发明的另一目的是提供上述叠层结构的制备方法。
本发明的又一目的是提供一种图形转移方法。
本发明的再一目的是提供一种返工方法。
为了实现以上目的，本发明提供如下技术方案。
一种叠层结构，包括：
剥离层，所述剥离层能够被刻蚀并且能够通过湿法去除；以及
底部抗反射结构，设置在所述剥离层上。
本发明还提供所述叠层结构的制备方法，包括以下步骤：
提供衬底；
在所述衬底上形成剥离层，所述剥离层能够被刻蚀并且能够通过湿法去除；以及
在所述剥离层上形成底部抗反射结构。
本发明还提供一种图形转移方法，包括以下步骤：
提供衬底；
在所述衬底上形成剥离层，所述剥离层能够被刻蚀并且能够通过湿法去除；
在所述剥离层上形成底部抗反射结构；
在所述底部抗反射结构上形成光刻胶层并进行光刻，得到图形化的光刻胶层；
以所述图形化的光刻胶层为掩膜，刻蚀所述底部抗反射结构和所述剥离层。
本发明还提供一种返工方法，包括以下步骤：
湿法去除通过上述图形转移方法所得结构中的剥离层，从而分离出衬底。
相比现有技术，本发明的有益效果：
本发明提供了一种叠层结构，通过在底部抗反射结构下方设置能够被刻蚀并且能够通过湿法去除的剥离层，不仅可以实现图形转移，而且当需要返工时，通过湿法去除剥离层，即可分离出衬底，大大降低返工难度，并且不对衬底造成损伤，从而避免形成缺陷。
附图说明
通过阅读下文优选实施方式的详细描述，各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的，而并不认为是对本发明的限制。而且在整个附图 中，用相同的参考符号表示相同的部件。在附图中：
图1-3为本发明的叠层结构的示意图。
附图标记说明
100为剥离层，200为底部抗反射结构，201为有机底部抗反射层，202为含硅底部抗反射层，300为光刻胶层。
具体实施方式
以下，将参照附图来描述本公开的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本公开的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本公开的概念。
在附图中示出了根据本公开实施例的各种结构示意图。这些图并非是按比例绘制的，其中为了清楚表达的目的，放大了某些细节，并且可能省略了某些细节。图中所示出的各种区域、层的形状以及它们之间的相对大小、位置关系仅是示例性的，实际中可能由于制造公差或技术限制而有所偏差，并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。
在本公开的上下文中，当将一层/元件称作位于另一层/元件“上”时，该层/元件可以直接位于该另一层/元件上，或者它们之间可以存在居中层/元件。另外，如果在一种朝向中一层/元件位于另一层/元件“上”，那么当调转朝向时，该层/元件可以位于该另一层/元件“下”。
由于现有技术中用于光刻的叠层结构难以返工，因此，本发明 提供了一种改进的叠层结构。
图1给出了本发明的叠层结构的示意图。具体地，如图1所示，本发明的叠层结构包括剥离层100，剥离层100能够被刻蚀并且能够通过湿法去除；以及底部抗反射结构200，设置在剥离层100上。
发明人通过在底部抗反射结构200下方设置能够被刻蚀并且能够通过湿法去除的剥离层100，不仅实现了图形转移，而且当需要返工时，通过湿法去除剥离层100，即可分离出衬底，大大降低返工难度。
在本发明的一些实施例中，剥离层100可为光刻胶或其他能够被刻蚀并且能够通过湿法去除的物质。更优选地，剥离层100可为耐高温光刻胶、LOR(lift-offresist)光刻胶或聚酰亚胺。
在本发明的一些实施例中，为了保证剥离层100可以很好地被剥离掉，并且为了在刻蚀有机底部抗反射层201后剥离层100也能够被迅速刻蚀，剥离层不宜太薄或者太厚。剥离层100的厚度可为30-100nm。例如，剥离层100的厚度可为30nm、35nm、40nm、45nm、50nm、55nm、60nm、65nm、70nm、75nm、80nm、85nm、90nm、95nm或100nm。可选地，剥离层100的厚度可为40-60nm。
底部抗反射结构200可以是传统的用于光刻的叠层结构。
在本发明的一些实施例中，参考图2，底部抗反射结构200由下至上依次包括：有机底部抗反射层201和含硅底部抗反射层202。
优选地，有机底部抗反射层201可为旋涂的有机碳层(SOC)。
优选地，有机底部抗反射层201的厚度可为100-200nm，例如 100-150nm。
优选地，含硅底部抗反射层202的材质可为有机硅氧烷、丙二醇甲醚醋酸酯或其他含硅的有机物。
优选地，含硅底部抗反射层202的厚度可为10-50nm，例如30-40nm。
在本发明的一些实施例中，参考图3，所述叠层结构还可包括：光刻胶层300，设置在底部抗反射结构200上。
优选地，光刻胶层300的厚度可为50-150nm，例如80-120nm。
本发明还提供所述叠层结构的制备方法，具体包括以下步骤。
首先，提供衬底。
然后，在衬底上形成剥离层100，剥离层100能够被刻蚀并且能够通过湿法去除。
在本发明的一些实施例中，可通过旋涂法形成剥离层100。
之后，在剥离层100上形成底部抗反射结构200。
在本发明的一些实施例中，底部抗反射结构200由下至上依次包括：有机底部抗反射层201和含硅底部抗反射层202。
本发明对于有机底部抗反射层201和含硅底部抗反射层202的形成方法不作特别限定，只要是本领域常规使用的任何方法，均可用于本发明。
本发明还提供一种图形转移方法，具体包括以下步骤。
首先，提供衬底。
然后，在衬底上形成剥离层100，剥离层100能够被刻蚀并且能 够通过湿法去除。
之后，在剥离层100上形成底部抗反射结构200。
接下来，在底部抗反射结构200上形成光刻胶层300并进行光刻，得到图形化的光刻胶层300。
最后，以图形化的光刻胶层300为掩膜，刻蚀底部抗反射结构200和剥离层100。
本发明中的刻蚀可为干法刻蚀，例如等离子体刻蚀。
在本发明的一些实施例中，底部抗反射结构200由下至上依次包括：有机底部抗反射层201和含硅底部抗反射层202。所述图形转移方法包括：以图形化的光刻胶层300为掩膜，刻蚀含硅底部抗反射层202，再以含硅底部抗反射层202为掩膜，刻蚀有机底部抗反射层201和剥离层100。
在刻蚀剥离层100后，可以以图形化的剥离层为掩膜，继续刻蚀衬底，实现图形转移。
本发明的图形转移方法能够实现光刻图形从上至下的转移，并且图形转移的精确性高。
本发明还提供一种返工方法，包括以下步骤。
湿法去除通过上述图形转移方法所得结构中的剥离层100，从而分离出衬底。
由于含硅底部抗反射层202为含硅量高的抗反射涂层，无法干法去除，不容易返工，因此采用湿法去除剥离层100，将有机底部抗反射层201和含硅底部抗反射层202与衬底分离。
在本发明的一些实施例中，湿法去除包括：将通过上述图形转移方法所得结构浸泡在去胶液中。优选地，所述去胶液可为N-甲基吡咯烷酮(NMP)、硫酸-双氧水混合溶液、丙酮中的一种或多种。当然，去胶液还可以是本领域常用的其他有机去胶液，本发明对此不作特别限定。
本发明的返工方法能够容易地将衬底分离出来，大大降低返工难度，并且不会对衬底造成损伤，从而避免形成缺陷。
下面将结合实施例对本发明作进一步说明。
实施例1
提供衬底。在衬底上旋涂聚酰亚胺，形成厚度为80nm的剥离层100。通过旋涂法在剥离层100上依次形成130nm的旋涂的有机碳层(SOC)和35nm含硅底部抗反射层(Si BARC)，得到叠层结构。
实施例2
在实施例1制备的叠层结构的含硅底部抗反射层上旋涂光刻胶，形成100nm的光刻胶层300。再进行浸没式光刻，得到图形化的光刻胶层300。然后，以图形化的光刻胶层300为掩膜，刻蚀含硅底部抗反射层202。再以含硅底部抗反射层202为掩膜，刻蚀有机底部抗反射层201和剥离层100，实现图形从上至下的转移。
实施例3
将实施例2制得的结构浸泡在N-甲基吡咯烷酮中，直至衬底完全剥离，完成返工。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (10)

  1. 一种叠层结构，其特征在于，包括：
    剥离层，所述剥离层能够被刻蚀并且能够通过湿法去除；以及
    底部抗反射结构，设置在所述剥离层上。
  2. 根据权利要求1所述的叠层结构，其特征在于，所述剥离层为光刻胶或其他能够被刻蚀并且能够通过湿法去除的物质。
  3. 根据权利要求1或2所述的叠层结构，其特征在于，所述剥离层的厚度为30-100nm。
  4. 根据权利要求1或2所述的叠层结构，其特征在于，所述底部抗反射结构由下至上依次包括：有机底部抗反射层和含硅底部抗反射层。
  5. 权利要求1-4中任一项所述的叠层结构的制备方法，其特征在于，包括以下步骤：
    提供衬底；
    在所述衬底上形成剥离层，所述剥离层能够被刻蚀并且能够通过湿法去除；以及
    在所述剥离层上形成底部抗反射结构。
  6. 根据权利要求5所述的制备方法，其特征在于，通过旋涂法形成所述剥离层。
  7. 一种图形转移方法，其特征在于，包括以下步骤：
    提供衬底；
    在所述衬底上形成剥离层，所述剥离层能够被刻蚀并且能够通过湿法去除；
    在所述剥离层上形成底部抗反射结构；
    在所述底部抗反射结构上形成光刻胶层并进行光刻，得到图形化的光刻胶层；
    以所述图形化的光刻胶层为掩膜，刻蚀所述底部抗反射结构和所述剥离层。
  8. 根据权利要求7所述的图形转移方法，其特征在于，所述底部抗反射结构由下至上依次包括：有机底部抗反射层和含硅底部抗反射层，所述方法包括：以所述图形化的光刻胶层为掩膜，刻蚀所述含硅底部抗反射层，再以所述含硅底部抗反射层为掩膜，刻蚀所述有机底部抗反射层和所述剥离层。
  9. 一种返工方法，其特征在于，包括以下步骤：
    湿法去除通过权利要求7或8所述方法获得的结构中的剥离层，从而分离出衬底。
  10. 根据权利要求9所述的返工方法，其特征在于，所述湿法去除包括：将通过权利要求7或8所述方法获得的结构浸泡在去胶液中，所述去胶液为N-甲基吡咯烷酮、丙酮、硫酸-双氧水混合溶液中的一种或多种。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692205A (en) * 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US20050147924A1 (en) * 2004-01-05 2005-07-07 Hitachi Global Storage Technologies Image transfer process for thin film component definition
CN101770940A (zh) * 2008-12-31 2010-07-07 中芯国际集成电路制造(上海)有限公司 叠层底部抗反射结构及刻蚀方法
CN103345130A (zh) * 2013-06-27 2013-10-09 上海华力微电子有限公司 光刻返工刻蚀工艺
CN108682621A (zh) * 2018-06-14 2018-10-19 武汉新芯集成电路制造有限公司 光刻胶层重做的方法以及栅极的形成方法
CN210805810U (zh) * 2019-11-25 2020-06-19 佛山市国星半导体技术有限公司 一种硅基氮化镓外延结构

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692205A (en) * 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US20050147924A1 (en) * 2004-01-05 2005-07-07 Hitachi Global Storage Technologies Image transfer process for thin film component definition
CN101770940A (zh) * 2008-12-31 2010-07-07 中芯国际集成电路制造(上海)有限公司 叠层底部抗反射结构及刻蚀方法
CN103345130A (zh) * 2013-06-27 2013-10-09 上海华力微电子有限公司 光刻返工刻蚀工艺
CN108682621A (zh) * 2018-06-14 2018-10-19 武汉新芯集成电路制造有限公司 光刻胶层重做的方法以及栅极的形成方法
CN210805810U (zh) * 2019-11-25 2020-06-19 佛山市国星半导体技术有限公司 一种硅基氮化镓外延结构

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