WO2024042791A1 - Heat conductive joining structure, heat conductive joining method, heat sink having said heat conductive joining structure, and semiconductor device having said heat conductive joining structure - Google Patents

Heat conductive joining structure, heat conductive joining method, heat sink having said heat conductive joining structure, and semiconductor device having said heat conductive joining structure Download PDF

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Publication number
WO2024042791A1
WO2024042791A1 PCT/JP2023/018545 JP2023018545W WO2024042791A1 WO 2024042791 A1 WO2024042791 A1 WO 2024042791A1 JP 2023018545 W JP2023018545 W JP 2023018545W WO 2024042791 A1 WO2024042791 A1 WO 2024042791A1
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plate
solder
heat
base plate
members
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PCT/JP2023/018545
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French (fr)
Japanese (ja)
Inventor
拓哉 井手
政明 村上
富行 沼田
裕章 巽
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株式会社ロータス・サーマル・ソリューション
国立大学法人大阪大学
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Publication of WO2024042791A1 publication Critical patent/WO2024042791A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks

Definitions

  • the present invention relates to a thermally conductive bonding structure suitable for a bonding structure between a heat receiving body of a heat sink and a heat dissipating fin, a bonding structure for various parts of a semiconductor device, and a thermally conductive bonding method.
  • a semiconductor device has a structure in which a plurality of members (semiconductor chips, circuit boards, base plates, etc.) having different coefficients of linear expansion are bonded to each other and stacked. Therefore, the large temperature change caused by the heat generation causes thermal strain in various parts of the semiconductor device, and damage and peeling of the heat conductive sheet, which is the bonding part, becomes a particular problem.
  • a solder layer that has low rigidity and can relieve stress in place of the thermally conductive sheet.
  • solder has a relatively high thermal resistance, resulting in poor heat dissipation through heat conduction between members.
  • the present invention aims to solve the problem by being suitable for the bonding structure of semiconductor devices, being able to alleviate stress caused by thermal strain, preventing damage and peeling of the bonded portion, and having low thermal resistance.
  • Thermal conduction bonding technology can improve heat dissipation through heat conduction between components, and can be expected to be smaller and have a longer lifespan.Furthermore, it can maintain rigidity in the stacking direction between components, making it possible to bond with durability.
  • the object of the present invention is to provide a heat conductive joining technology that can maintain parallelism between members during assembly and improve assembly accuracy.
  • the inventors of the present invention have conducted intensive studies and found that by combining a metal plate having a plurality of through holes extending in the thickness direction with solder, stress can be alleviated in the horizontal direction parallel to the surface, and damage can occur.
  • the bonded structure not only prevents peeling and peeling, but also suppresses thermal resistance in the thickness direction (thickness direction), has excellent thermal conductivity, maintains rigidity in the thickness direction, and achieves assembly accuracy.
  • thermally conductive bonding structure is effective for applications other than semiconductor devices, and furthermore, we have discovered that this can be applied to a new bonding structure between a heat receiving body and a heat dissipation fin of a heat sink, and have developed the present invention. I was able to complete it. In addition, under the experimental conditions shown below, we investigated changes in thermal conductivity in the thickness direction and apparent rigidity in the in-plane direction when changing the volume ratio of the metal plate (copper plate) and solder. I got the graph.
  • the volume of the metal plate should be 70 vol% or less (porosity is 30 vol% or more), and more preferably the volume of the metal plate should be 20 vol% or more. It has been found that it is preferable to set the porosity in a range of 70 vol% or less (porosity of 30 vol% or more and 80 vol% or less).
  • a thermally conductive bonding structure consisting of a bonding layer that closely adheres to a certain member and conducts heat between the bonding layer and the bonding layer, which has a plurality of bonding layers extending in the thickness direction and opening on both the front and back surfaces. Consisting of a metal porous base plate in which a through hole is formed, a filling part filled in the through hole of the porous base plate, and a solder film that extends on at least one plate surface in continuity with the filling part. a solder solidified body, and the solder film is closely bonded to the facing member.
  • a thermally conductive bonding structure consisting of a bonding layer provided between two members to bond the two members and transmit heat from one of the two members to the other, the bonding layer extending in the thickness direction.
  • a metal porous base plate having a plurality of through holes opening on both the front and back surfaces and interposed between the two members; a filling portion filled in the through holes of the porous base plate;
  • a solidified solder body consisting of a solder film extending over both plate surfaces continuously from the filling part, and the solder film is closely joined to two members facing each other.
  • a thermally conductive bonding method in which a bonding layer is provided that closely adheres to a certain member and conducts heat between the member, and the bonding layer extends in the thickness direction and opens on both the front and back surfaces of the plate.
  • a metal porous base plate in which a plurality of through holes are formed is provided, and a solder material is filled in the through holes of the porous base plate, and spreads on at least one plate surface continuously from the filled portion.
  • a thermally conductive bonding method wherein a solidified solder body is provided with a solder film formed thereon, and the solder film is closely bonded to the member facing the member.
  • a thermally conductive bonding method in which a bonding layer that transfers heat from one of the two members to the other is provided between the two members to bond the two members, the bonding layer being a bonding layer that extends in the thickness direction and has a A metal porous base plate in which a plurality of through holes opening to the plate surface are formed is interposed between the two members, and a solder material is filled in the through holes of the porous base plate, and A thermally conductive bonding method in which a solidified solder is provided in a filled part and solidified with a solder film that spreads continuously over both plate surfaces, and the solder film is bonded to two facing members in close contact with each other. .
  • solder material is interposed between one or both of the front and back surfaces of the porous base plate and the member facing thereto, and the member, the porous base plate, and the solder material are stacked. heating the porous base plate to melt the solder material, filling the through hole of the porous base plate with the solder material, and forming a solder film that extends continuously over the filled portion and on both plate surfaces.
  • solder solidified body made of the solder film that extends over the plate surface continuously in the filling part, and the solder film is in close contact with the facing heat absorbing body, and heat is not generated between the solder film and the heat absorbing body.
  • a heat sink in which the conductive bonding layer is formed and heat is radiated to the outside through a through hole in a remaining region protruding around the heat absorbing body of the plate-like fin.
  • a first plate-like fin and the other member of the two members joined to a region corresponding to the partial region of the plate surface opposite to the plate surface of the first plate-like fin.
  • a metal connecting body and a metal second plate-like fin having a partial region of the plate surface joined to a surface of the connecting body opposite to the surface joined to the first plate-like fin.
  • the first plate-like fin and the second plate-like fin each have a plurality of through-holes opening to the plate surface, and the partial area of the first plate-like fin has a plurality of through holes formed in the first plate-like fin and the second plate-like fin.
  • the solidified solder body is comprised of the filling part filled in a through hole formed in the through hole, and the solder film extending continuously to the filling part and spreading over both plate surfaces, and the solder film faces each other.
  • the bonding layer is formed to be in close contact with the heat absorbing body and the connecting body, respectively, and transmitting heat from the heat absorbing body to the connecting body, and the remaining portion of the first plate-shaped fin protrudes around the heat absorbing body and the connecting body.
  • a heat sink that radiates heat to the outside through a through hole in the region and a through hole in the remaining region protruding around the connecting body of the second plate-like fin.
  • (10) Comprising a base plate, a circuit board bonded onto the base plate, and a semiconductor chip bonded onto the circuit board, and between the two members of the base plate and the circuit board, and the circuit board.
  • thermoly conductive bonding structure according to (2) wherein a heat sink is provided on the lower surface side of the base plate on which the circuit board and the semiconductor chip are stacked, and the bonding layer is provided between the two members of the base plate and the heat sink.
  • a semiconductor device having:
  • the metal porous base plate whose through holes are filled with solder can easily expand and contract in the horizontal direction parallel to the bonding surface, thereby relieving stress. Moreover, since the filled portion continuous with the solder film has an anchor effect, damage and peeling can be prevented. In other words, a porous base plate having multiple through holes in the thickness direction can be deformed in the horizontal direction to relieve stress, and the solder filled portion in each through hole is shaped like a rod in the thickness direction. Therefore, it is easy to bend in the horizontal direction, and the relaxation of stress in this direction is further promoted.
  • the filling portion that is continuous with the solder film and filled in each through hole serves as an anchor to maintain strong integrity and adhesion between the solder film and the porous base plate.
  • the solder film has a solder film that tightly adheres to the component, but since the through hole that is filled with solder is surrounded by a metal plate, the thermal resistance along the plate thickness direction is small, and it has excellent adhesion to the component. Has thermal conductivity. Since the through-holes are filled with solder, an increase in thermal resistance due to the presence of voids can be avoided, and the solidified solder and the porous base plate have a wide contact area through the filled portions filled in the through-holes. Therefore, the heat received by the solder film can be efficiently transferred to the porous base plate.
  • each through hole in the porous base plate extends in the thickness direction, excellent rigidity is maintained in the thickness direction perpendicular to the joint surface.
  • the solder filling portion filled in each through hole has a rod shape extending in the plate thickness direction as described above, the rigidity in the plate thickness direction, which is the axial direction, is further improved. Therefore, accuracy during assembly can be easily achieved. In other words, a bonded structure with low thermal resistance and excellent thermal conductivity can be realized with the designed thickness, parallelism, and other precision.
  • the porous base plate constituting the bonding layer has a porosity of 30 to 80 vol% due to the through holes. If the porosity is less than 30%, the stress relaxation effect tends to be small. Moreover, when it is larger than 80%, the vertical rigidity decreases, the whole is easily deformed, and the accuracy of the joints such as thickness cannot be maintained.
  • a solder material is interposed between one or both of the front and back surfaces of the porous base plate and the member facing it, and the member, the porous base plate, and the solder material are heated in a stacked state, and the solder material is The solder is solidified by melting the solder material, filling the through holes of the porous base plate, and cooling and solidifying the solder film forming a solder film that spreads continuously over both plate surfaces in the filled part. According to the method of forming the body, it is possible to realize the thermally conductive bonding structure according to the present invention efficiently and with high precision.
  • the two members, the porous base plate, and the solder material are stacked vertically, and the solder material is placed on the upper surface of the porous base plate, and heated to melt the solder material. Due to the weight of the solder material and the load from the upper member, the solder material falls into the through hole and fills it, and it also leaks from the lower opening of the through hole and spreads into the gap between the porous base plate and the lower member.
  • the method of forming the solder film on the side plate surface and using the remaining solder material that did not fall into the through hole to form the solder film on the upper plate surface allows efficient and accurate heat conduction of the present invention. A bonded structure can be realized.
  • the bonding portion between the heat absorbing body and the plate-like fin has excellent adhesion and thermal conductivity, and has excellent heat dissipation property. It is possible to alleviate the stress generated in the parts and prevent peeling. Furthermore, it is possible to stably and efficiently provide a high-quality heat sink that has high rigidity and assembly accuracy, and has the strength and precision as designed.
  • the thermally conductive bonding structure according to the present invention the connecting body and the second plate-shaped fin are further bonded, and a similarly high-quality heat sink with better heat dissipation performance can be stably and efficiently provided.
  • the bonding portion between the base plate and the circuit board or between the circuit board and the semiconductor chip has excellent adhesion and thermal conductivity.
  • a heat sink is provided on the lower surface side of the base plate on which the circuit board and the semiconductor chip are laminated, and between the two members of the base plate and the heat sink, in the case of the bonding layer, there is a gap between the base plate and the heat sink.
  • the bonded portion has excellent adhesion and thermal conductivity, has excellent heat dissipation, and can alleviate stress generated at the bonded portion, thereby preventing the heat sink from peeling off. Furthermore, it is possible to stably and efficiently provide high-quality semiconductor devices that have high rigidity and assembly accuracy, and have strength and precision as designed.
  • FIG. 1 is a perspective view showing the concept of a thermally conductive joining structure of the present invention.
  • FIG. 3 is a cross-sectional view showing the concept of the heat conductive bonding structure.
  • FIG. 2 is an explanatory diagram showing the thermally conductive bonding method of the present invention. Explanatory drawing showing a modification of the thermally conductive bonding structure.
  • FIG. 1 is a perspective view showing the concept of a thermally conductive joining structure of the present invention provided between two members.
  • FIG. 3 is a cross-sectional view showing the concept of the heat conductive bonding structure.
  • FIG. 2 is an explanatory diagram showing the thermally conductive joining method of the present invention for joining two members.
  • FIG. 1 is a perspective view showing an example of a heat sink having a thermally conductive bonding structure according to the present invention. Also a cross-sectional view. An explanatory diagram showing the procedure for manufacturing the heat sink.
  • FIG. 1 is a perspective view showing an example of a heat sink having a thermally conductive bonding structure of the present invention provided between two members. Also a cross-sectional view. An explanatory diagram showing the procedure for manufacturing the heat sink.
  • FIG. 1 is a cross-sectional view showing an example of a semiconductor device having a thermally conductive bonding structure of the present invention provided between two members. Graph showing changes in thermal conductivity in the thickness direction and apparent stiffness in the in-plane direction
  • the thermally conductive bonding structure S1 according to the present invention is a structure consisting of a bonding layer 10 that closely adheres to a certain member 9 and conducts heat between the member 9.
  • the bonding layer 10 includes a metal porous base plate 11 in which a plurality of through holes 111 extending in the thickness direction and opening on both the front and back surfaces are formed, and It is provided with a filling part 121 filled in the through hole 111 of the base plate 11, and a solidified solder body 12 consisting of solder films 122 and 123 extending continuously from the filling part on at least one plate surface. Then, it is closely bonded to the facing member 9 by a solder film 122.
  • the porous base plate 11 is made of metal, has low thermal resistance, has excellent adhesion to the member 9, and has excellent thermal conductivity, and at the same time has through holes extending in the thickness direction. Since it is a plate material having a diameter of 111, it can be easily deformed in the horizontal direction and stress can be alleviated. Further, the filling portion 121 that is continuous with the solder film 122 and filled in each through hole 111 serves as an anchor to maintain strong integrity and adhesion between the solder film 122 and the porous base plate 11.
  • the porous base plate 11 has a solder film that tightly adheres to the component, but since the through hole filled with solder is surrounded by a metal plate, the thermal resistance along the plate thickness direction is small, and it has excellent adhesion and thermal conductivity to the component. has. There is also a wide contact area between the solder solidification body 12 and the porous base plate 11 through the filling part 121 filled in the through hole 111, and the heat received by the solder film 122 is efficiently transferred to the porous base plate 11. can do. Further, since the through holes 111 extend in the thickness direction, the porous base plate 11 maintains excellent rigidity in the thickness direction.
  • the solder filling portion 121 filled in each through hole 111 has a rod shape extending in the thickness direction as described above, the rigidity in the thickness direction, which is the axial direction, is further improved. Therefore, accuracy during assembly can be easily achieved. In other words, it is possible to realize a bonded structure with low thermal resistance and excellent thermal conductivity with the designed thickness, parallelism, and other precision.
  • another member may or may not be bonded to the side of the bonding layer 10 opposite to the member 9.
  • the porous base plate 11 constituting the bonding layer 10 has a remaining region extending outward from the region in addition to the region constituting the bonding layer 10, and the porous base plate 11 that constitutes the bonding layer 10 has a remaining region extending outward from the region, and has a remaining region extending outward from the region constituting the bonding layer 10.
  • a heat sink that has another function in the case of a heat sink described later, it has a function as a cooling fin for passing cooling fluid), or a second bonded area is provided through a non-bonded area as shown in Figure 3. It can be applied to a wide range of applications.
  • the porous base plate 11 can be made of a wide variety of metal materials with excellent thermal conductivity, such as aluminum, iron, and copper, and alloys thereof.
  • a perforated plate is used, which is obtained by cutting a lotus-shaped porous metal molded body formed by a metal coagulation method and having a plurality of pores extending in one direction in a direction perpendicular to the direction in which the pores extend. It will be done.
  • the porous base plate of the present invention also includes those in which through holes are formed using a drill, laser, or the like.
  • the lotus-shaped porous metal molded body can be formed by a known method such as a pressurized gas method (for example, the method disclosed in Japanese Patent No. 4235813) or a thermal decomposition method. .
  • the through-holes of the porous plate cut out from the lotus-type porous metal molded body in this manner are the pores divided by the cutting process.
  • the porous base plate 11 can be easily obtained at low cost.
  • the porosity due to the through holes 111 of the porous base plate 11, that is, the ratio of the total volume inside the through holes 111 to the volume assuming that no holes exist in the porous base plate 11 is preferably 20 to 70% by volume. Further, the opening diameter (diameter) of the through hole 111 is preferably 0.01 to 1.00 mm.
  • the solder (solder alloy) of the solder solidified body 12 is determined depending on the usage environment, such as the temperature of the heat exchanged with the parts to be joined, the expected stress, etc., the material of the porous base plate 11, the size of the through hole, the plate thickness, etc.
  • the material may be appropriately selected from known materials depending on the properties such as wettability required by the method. Particularly preferred are Sn--Ag based, Sn--Cu based, Sn--Bi based, Sn--In based solder alloys, or solder alloys based on these and containing a third element.
  • the filling portion 121 is solidified solder filled in the through hole 111 of the porous base plate 11, and is integrated with the solder films 122 and 123. As will be described later, in order to melt the solder plate placed over the porous base plate 11 and to cause the solder to flow into the through holes 111 and solidify, the surface of the porous base plate 11 (including the inner walls of the through holes) is melted. It is also preferable to apply/evaporate a flux or other coating agent or metal film that increases solder wettability.
  • the solder films 122 and 123 are solder films that extend over at least one plate surface continuously from the filling portion 121, and are films that improve adhesion and adhesion to the members to be joined.
  • a solder film 123 is also formed on the opposite side, but the solder film 123 can be omitted.
  • the solder film 122 and the member 9 are tightly adhered to each other and can perform heat transfer. Unlike conventional solder joints, the solder film 122 is relatively thin, and the solder film 122 does not reduce overall rigidity or accuracy.
  • the filling portion 121 formed continuously on the solder film 122 functions as an anchor, and can prevent separation from the porous base plate 11.
  • FIG. 2 shows a procedure for forming the thermally conductive bonding structure S1 of this example, that is, a thermally conductive bonding method in which a bonding layer 10 is provided in close contact with a member 9 and conducts heat between the member and the member 9. .
  • the solder plate 120 and the porous base plate 11 are stacked on the member 9.
  • the solder plate 120 is melted by heating with a heating furnace or the like.
  • the solder on the solder plate 120 rises through the through holes 111 of the porous base plate 11, oozes out to the upper surface side, forms a solder film 123, and solidifies.
  • solder film 122 between the porous base plate 11 and the member 9 and solidifies. Furthermore, the solder solidified within the through hole 111 forms the filling portion 121 . In this way, the bonding layer 10 (thermal conductive bonding structure S1) closely bonded to the member 9 is formed. Peeling of the solder film 122 and the porous base plate 11 can be prevented by the anchor effect of the filling part 121, but as in this example, a solder film 123 that connects and integrates the filling parts 121 is provided at the end of the filling part 121. This structure further enhances the anchor effect.
  • the solder plate 120 was placed between the member 9 and the porous base plate 11 and heated, but it is also possible to place a solder plate on the upper surface side, that is, on the side where the solder film 123 is formed, and then heat it. is also preferable. This allows the solder film 123 to be formed more reliably. Further, in addition to the solder plate 120, it is also preferable to fill the through hole 111 with solder powder.
  • thermally conductive bonding structure S2 consisting of a bonding layer provided between two members to bond the two members and transmit heat from one of the two members to the other will be explained based on FIGS. 4a, 4b, and 5. explain.
  • the bonding layer 10A of the thermally conductive bonding structure S2 includes the porous base plate 11 interposed between the two members 91 and 92, and the through-hole 111 of the porous base plate 11.
  • a solidified solder body 12 consisting of a filling part 121 filled in the interior and solder films 122 and 123 extending continuously from the filling part 121 onto both plate surfaces, and the solder films 122 and 123 are two members facing each other. 91 and 92, respectively, in close contact with each other.
  • the thermally conductive joint structure S2 of the present invention similarly has excellent adhesion and thermal conductivity to the members 91 and 92, and since it is a plate material having through holes 111 extending in the thickness direction, It is easy to deform and can relieve stress. In particular, when joining two members, stress is likely to occur at the joint due to differences in thermal contraction between the two members, but the present invention absorbs this stress and prevents breakage and damage.
  • FIG. 5 shows the procedure for forming the thermally conductive bonded structure S2 of this example.
  • a conduction bonding method is shown. First, the solder plate 120, the porous base plate 11, and the solder plate 120 are stacked in this order on one member 91, and then the other member 92 is stacked on top of that. Then, both solder plates 120 are melted by heating them by placing them in a heater 4 or a heating furnace. As a result, the solder of the solder plate 120 is filled into the through holes 111 of the porous base plate 11 from above and below, respectively, and solder films 122 and 123 are formed that continue from the filled portions 121 and spread over both plate surfaces.
  • the amount of solder that melts from the solder plate 120 and flows into the through hole 111 increases as the solder on the upper side flows in due to gravity. It is preferable to make 120 thicker and use a larger amount of solder.
  • the solder plates 120 are arranged on both the upper and lower sides of the porous base plate 11, but it is also possible, for example, to use only the upper solder plate and omit the lower side. Even if the lower side is omitted, the solder flowing downward from the through hole 111 can spread and form the lower solder film 122.
  • the heat sink 2 of this example is an improved version of the heat sink described in Japanese Unexamined Patent Publication No. 2018-73869 (Japan), and by using the present thermally conductive bonding structure S1, it can be manufactured more efficiently and accurately, and from the heat absorber. It is constructed to have excellent heat conduction to the cooling fins and excellent bonding strength. Specifically, as shown in FIGS. 6a and 6b, it is made of metal and has a contact surface 20b that comes into contact with an object to be cooled such as a CPU, and the heat of the object to be cooled is transferred through the contact surface.
  • It includes a heat absorbing body 20 and a metal plate-shaped fin 21 having a partial region R1 of the plate surface joined to a surface 20a of the heat absorbing body 20 opposite to the contact surface 20b.
  • a plurality of through holes 111 are formed in the plate-like fin 21 and open to the plate surface.
  • the bonding layer 10 of the heat absorbing body 20 and the plate-like fin 21 is formed in the partial region R1 of the plate-like fin 21, with the heat absorbing body 20 as the member 9 and the plate-like fin 21 as the porous base plate 11,
  • the solidified solder body 12 is composed of the filled portion 121 filled in the through hole 111 of the region R1, and the solder films 122 and 123 that extend over the plate surface continuously from the filled portion 121. .
  • the solder film 122 is in close contact with the facing heat absorbing body 20 and efficiently conducts heat between it and the heat absorbing body 20 .
  • the remaining region R2 of the plate-shaped fin 21 that protrudes around the heat absorbing body 20 functions as a heat radiating fin that radiates heat to the fluid passing through the through hole 111.
  • the heat sink 2 of this example the above-mentioned effects of the thermally conductive bonding structure S1 are achieved, that is, superior adhesion is achieved compared to the conventional heat sink in which the plate end of the heat dissipation fin is bonded to the side wall of the heat absorber. It has thermal conductivity, can relieve stress, and has excellent bonding strength.
  • the filling portion 121 that is continuous with the solder film 122 and filled in each through hole 111 serves as an anchor to maintain strong integrity and adhesion between the solder film 122 and the plate-shaped fin 21.
  • a bonded structure with low thermal resistance and excellent thermal conductivity can be easily realized with the thickness, parallelism, and other precision as designed.
  • a solder film 123 is also formed on the surface of the plate-shaped fin 21 opposite to the heat absorbing body 20, but this film can be omitted.
  • a solder plate 120 having the same shape in plan view is placed on the upper surface of the heat absorbing body 20, and plate-shaped fins 21 are further stacked.
  • the plate-shaped fin 21 is placed such that the center region R1 is placed on the solder plate 120, and the remaining region R2 is located around the center region R1.
  • the solder of the solder plate 120 rises through the through hole 111 in the region R1 on the center side of the plate-shaped fin 21, and moves toward the upper surface side.
  • the solder oozes out, forms a solder film 123, and solidifies.
  • solder film 122 between the plate-like fins 21 and the heat absorbing body 20 and solidifies. Furthermore, the solder solidified within the through hole 111 forms a filling portion 121 . In this way, the bonding layer 10 (thermal conductive bonding structure S1) closely bonded to the heat absorbing body 20 is formed.
  • the heat absorbing body 20 has a solid cubic shape made of metal, it is not limited to such a configuration. It may be hollow instead of solid. A wide range of materials used for conventional heat sinks, such as aluminum, iron, and copper, can be used. Moreover, it can also be configured with a heat pipe built-in or the heat pipe itself.
  • the shape of the plate-like fin 21 is rectangular, it is not limited to this at all, and of course it can be made into a shape other than a rectangle, such as a polygon or a circle.
  • the heat sink 2A of this example is an improved version of the heat sink also described in Japanese Patent Application Publication No. 2018-73869 (Japan), and by using the present heat conductive bonding structure S2, it can be manufactured more efficiently and accurately, and the heat absorber
  • the structure has excellent heat conduction from the cooling fins to the cooling fins, and excellent bonding strength.
  • a metal heat absorber 20 has a contact surface 20b that contacts the object to be cooled, and the heat of the object to be cooled is transferred through the contact surface. and a first plate-like fin 21 made of metal with a partial region R3 of the plate surface joined to the surface 20a on the opposite side to the contact surface 20b of the heat absorbing body 20; A metal connecting body 22 joined to a region corresponding to the partial region R3 on the plate surface opposite to the plate surface, and a surface of the connecting body 22 opposite to the surface joined to the first plate-like fin 21.
  • a second plate-shaped fin 21A made of metal is provided on the side surface thereof, to which a partial region R5 of the plate surface is joined.
  • the bonding layer 10A of the heat absorbing body 20, the plate-like fins 21, and the connecting body 22 uses the heat absorbing body 20 as one of the two members 91, and the first plate-like fin 21 as the porous base plate 11,
  • the connecting body 22 is the other member 92 of the two members, and the filling portion 121 filled in the through hole 111 of the region R3 is provided in the partial region R3 of the plate-like fin 21, and the filling portion 121
  • the solidified solder body 12 is composed of the solder films 122 and 123 that continuously spread over the upper and lower plate surfaces.
  • the solder films 122 and 123 are in close contact with the heat absorbing body 20 and the connecting body 22 facing each other, and conduct heat efficiently between the heat absorbing body 20 and the connecting body 22, respectively.
  • the connecting body 22 and the second plate-like fin 21A are joined by a thermally conductive joining structure S1 made of the same joining layer 10 as in the example of the heat sink 2 described above.
  • the remaining region R4 of the first plate-like fin 21 that protrudes around the heat absorbing body 20 and the connecting body 22, and the remaining region R6 of the second plate-like fin 21A that protrudes around the connecting body 22 have through holes 111, respectively. It functions as a radiation fin that radiates heat to the fluid passing through it.
  • the above-mentioned effects of the thermally conductive bonding structures S1 and S2 are superior to those of the conventional heat sink in which the plate ends of the heat dissipation fins are bonded to the side wall of the heat absorber. It has good adhesion and thermal conductivity, can relieve stress, and has excellent bonding strength.
  • the plate fins 21 and 21A there is only one connecting body 22, and two heat dissipating fins, the plate fins 21 and 21A, are arranged in parallel in the axial direction perpendicular to the plate surface. It is also possible to provide a heat sink with two or more connecting bodies 22 arranged in series in the axial direction, and three or more radiation fins arranged in parallel. According to the heat conductive joint structures S1 and S2 of the present invention, a plurality of heat dissipating fins can be assembled in parallel with each other with high precision, and the heat absorbed by each fin can be efficiently transmitted, and the heat can be efficiently transmitted from each fin. It can dissipate heat well.
  • the present heat sink 2 is constructed by placing a solder plate 120, a plate-like fin 21, a solder plate 120, a connecting body 22, a solder plate 120, and a plate-like fin 21A in this order on the upper surface side of a heat absorbing body 20. I'll keep it.
  • the plate-shaped fins 21 and 21A are placed so that the center regions R3 and R5 correspond to the positions of the solder plate 120, respectively, and the remaining regions R4 and R6 are located around the center regions R3 and R5, respectively.
  • solder of each solder plate 120 is transferred to the through holes 111 of the center side regions R3 and R5 of the plate-shaped fins 21 and 21A.
  • solder films 122 and 123 are formed on both surfaces of each fin and solidified.
  • each fin forms a filling portion 121, respectively.
  • the bonding layer 10A in which the plate-like fins 21 are tightly bonded to the heat absorbing body 20 and the connecting body 22 thermal conductive joint structure S2
  • a joint extension 10 in which the plate-like fins 21A are tightly joined to the connecting body 22
  • a thermally conductive bonding structure S1 is formed.
  • Other structures, materials, modifications, etc. are the same as those of the heat sink 2 described above, so their explanations will be omitted.
  • the semiconductor device 3 of this example includes a base plate 30, a circuit board 31 bonded onto the base plate 30, a semiconductor chip 32 bonded onto the circuit board 31, and a semiconductor chip 32 bonded onto the bottom surface of the base plate 30. It is provided with a heat sink 33 to be bonded, and between the base plate 30 and the circuit board 31, between the circuit board 31 and the semiconductor chip 32, and between the base plate 30 and the heat sink 33, from the bonding layer 10A to The present heat conductive bonding structure S2 is provided.
  • Reference numeral 34 indicates a bonding wire, 35 a terminal, 36 a case, and 37 a filler.
  • the semiconductor device 3 using the thermally conductive bonding structure S2 of the present invention has excellent adhesion and thermal conductivity in these bonded portions, and also relieves stress generated in the bonded portions and prevents breakage and peeling. Since it has excellent durability and prevents such occurrences, efficient heat dissipation and stress relaxation can be achieved, and equipment can be expected to be smaller and have a longer lifespan. Furthermore, since it has high rigidity and assembly accuracy, it is possible to stably and efficiently provide a high-quality device that has the strength and precision as designed.
  • the thermally conductive bonding structure S2 is used for each bonding portion, but it may of course be adopted only for some bonding portions. Furthermore, it goes without saying that the structure of the semiconductor device is not limited to that shown in the drawings, and can be applied to various types of devices.

Abstract

[Problem] To provide a heat conductive joining technology which is suitable for a joining structure of a semiconductor device, is capable of mitigating stress due to thermal deformation and preventing damage and peeling of a joining part, ensures low thermal resistance, and is capable of enhancing heat dissipation through heat transfer between members, and With which it is possible to maintain durability as a device without maintaining stiffness between the members in the stacking direction thereof, and maintain parallelism between the members during joining and assembly to enhance assembly accuracy. [Solution] This structure, which is composed of a joining layer 10 which is in close contact with a member 9 and performs heat transfer between the structure and the member 9, comprises: a metal-made porous base plate 11 having a plurality of through-holes 111 which extend in the thickness direction of the plate and are open in the front and rear plate surfaces of the plate; and a solder solidified body 12 composed of a filling part 121 filled in the though-holes 111 of the porous base plate 11, and solder films 122, 123 which are continuous to the filling part and expand on at least one plate surface, wherein the structure is brought into close contact with and joined to the facing member 9 by means of the solder film 122.

Description

熱伝導接合構造、熱伝導接合方法、該熱伝導接合構造を有するヒートシンク、並びに該熱伝導接合構造を有する半導体装置A thermally conductive bonding structure, a thermally conductive bonding method, a heat sink having the thermally conductive bonding structure, and a semiconductor device having the thermally conductive bonding structure
 本発明は、ヒートシンクの受熱体と放熱フィンとの接合構造や、半導体装置の各部の接合構造に好適な熱伝導接合構造、並びに熱伝導接合方法に関する。 The present invention relates to a thermally conductive bonding structure suitable for a bonding structure between a heat receiving body of a heat sink and a heat dissipating fin, a bonding structure for various parts of a semiconductor device, and a thermally conductive bonding method.
 近年の半導体装置,特にパワー半導体装置は、電流密度の増大に伴って半導体チップの発熱量が大きくなっている。また、半導体装置は小型化が期待され、発熱量の大きな半導体チップの熱を効率良く、冷却器であるヒートシンクに輸送し,さらにヒートシンクから気相あるいは液相冷媒中へ放散させることがより重要となっている。代表的な半導体装置は、たとえばベース板の上に回路基板と半導体チップが積層され、ベース板の下面側にヒートシンクが取り付けられている。積層される各部材間には、良好な熱伝導を維持して両者を接合する熱伝導シートが提供されている(例えば、特許文献1参照。)。 In recent semiconductor devices, especially power semiconductor devices, the amount of heat generated by the semiconductor chip is increasing as the current density increases. In addition, as semiconductor devices are expected to become smaller, it is becoming more important to efficiently transport the heat from semiconductor chips that generate a large amount of heat to a heat sink, which is a cooler, and then dissipate the heat from the heat sink into a gas or liquid phase coolant. It has become. In a typical semiconductor device, for example, a circuit board and a semiconductor chip are stacked on a base plate, and a heat sink is attached to the lower surface of the base plate. A heat conductive sheet is provided between each laminated member to maintain good heat conduction and join the members together (for example, see Patent Document 1).
 ところで、半導体装置は、線膨張係数の異なる複数の部材(半導体チップ、回路基板、ベース板等)を互いに接合させて積層した構造を有している。このため、上記発熱に伴う大きな温度変化は,半導体装置の各部に熱ひずみを発生させ、特に接合部である熱伝導シートの破損、剥離が問題となっている。このような熱ひずみによる接合部の破損を防止するため、熱伝導シートの代わりに、低剛性で応力を緩和できるはんだ層とすることも考えられる。しかし、はんだは熱抵抗が比較的大きく、部材間の熱伝導を通じた放熱性が悪くなる。また、部材間の積層方向、すなわち接合面に直交する板厚方向に剛性が保てず、装置としての耐久性に限界がある。さらに、接合組み付けの際に、部材間の平行度を保つことが難しく、組み付け精度の面でも課題がある。 Incidentally, a semiconductor device has a structure in which a plurality of members (semiconductor chips, circuit boards, base plates, etc.) having different coefficients of linear expansion are bonded to each other and stacked. Therefore, the large temperature change caused by the heat generation causes thermal strain in various parts of the semiconductor device, and damage and peeling of the heat conductive sheet, which is the bonding part, becomes a particular problem. In order to prevent damage to the joint due to such thermal strain, it may be possible to use a solder layer that has low rigidity and can relieve stress in place of the thermally conductive sheet. However, solder has a relatively high thermal resistance, resulting in poor heat dissipation through heat conduction between members. Furthermore, rigidity cannot be maintained in the lamination direction between the members, that is, in the plate thickness direction perpendicular to the joint surfaces, and there is a limit to the durability of the device. Furthermore, it is difficult to maintain parallelism between members during joining and assembly, and there is also a problem in terms of assembly accuracy.
特開平11-58591号公報(日本国)Japanese Patent Application Publication No. 11-58591 (Japan)
 そこで、本発明が前述の状況に鑑み、解決しようとするところは、半導体装置の接合構造に好適で、熱ひずみによる応力を緩和でき、接合部の破損や剥離を防止できるとともに、熱抵抗が小さく、部材間の熱伝導を通じた放熱性を高めることができ、小型化・長寿命化を期待できる熱伝導接合技術、さらには、部材間の積層方向に剛性を保つことができ、耐久性とともに接合組み付けの際に部材間の平行度を保つことができ、組み付け精度も高められる熱伝導接合技術を提供する点にある。 Therefore, in view of the above-mentioned situation, the present invention aims to solve the problem by being suitable for the bonding structure of semiconductor devices, being able to alleviate stress caused by thermal strain, preventing damage and peeling of the bonded portion, and having low thermal resistance. , Thermal conduction bonding technology can improve heat dissipation through heat conduction between components, and can be expected to be smaller and have a longer lifespan.Furthermore, it can maintain rigidity in the stacking direction between components, making it possible to bond with durability. The object of the present invention is to provide a heat conductive joining technology that can maintain parallelism between members during assembly and improve assembly accuracy.
 本発明者はかかる現況に鑑み、鋭意検討を進めた結果、厚み方向に延びる複数の貫通孔を有する金属板と、はんだとを組み合わせることで、面に平行な水平方向に応力を緩和し、破損や剥離を防止できるとともに、厚み方向(板厚方向)の熱抵抗を小さく抑え、優れた熱伝導性を有し、且つ、厚み方向に剛性を保つことができ、組み付け精度も得られる接合構造が実現できること、並びに、このような熱伝導接合構造は半導体装置以外にも有効であることを見出し、さらに、これを新たなヒートシンクの受熱体と放熱フィンとの接合構造に応用できることを見出し、本発明を完成するに至った。
 また、下に示す実験条件で、金属板(銅板)とはんだの体積比率を変化させたときに、厚み方向の熱伝導率と面内方向の見かけの剛性の変化を調べた結果、図11のグラフを得た。このグラフから、金属板の体積(孔を除く肉部分の体積)が大きい(空隙率が小さい)ほど、熱伝導率は比例して大きくなるが、面内方向の見かけの剛性は加速度的に大きくなることがわかる。このことから、熱伝導性と応力の緩和の双方を満たすためには、金属板の体積が70vol%以下(空隙率が30vol%以上)の範囲、より好ましくは、金属板の体積が20vol%以上70vol%以下(空隙率が30vol%以上80vol%以下)の範囲に設定することが好ましいことが分かった。
(実験条件)
・接合層の板厚:200μm
・はんだ:SAC305(Sn-3mass%Ag-0.5mass%Cu)
・熱伝導率測定装置:TCM1001(レスカ株式会社製)
In view of the current situation, the inventors of the present invention have conducted intensive studies and found that by combining a metal plate having a plurality of through holes extending in the thickness direction with solder, stress can be alleviated in the horizontal direction parallel to the surface, and damage can occur. The bonded structure not only prevents peeling and peeling, but also suppresses thermal resistance in the thickness direction (thickness direction), has excellent thermal conductivity, maintains rigidity in the thickness direction, and achieves assembly accuracy. We have discovered that this can be realized and that such a thermally conductive bonding structure is effective for applications other than semiconductor devices, and furthermore, we have discovered that this can be applied to a new bonding structure between a heat receiving body and a heat dissipation fin of a heat sink, and have developed the present invention. I was able to complete it.
In addition, under the experimental conditions shown below, we investigated changes in thermal conductivity in the thickness direction and apparent rigidity in the in-plane direction when changing the volume ratio of the metal plate (copper plate) and solder. I got the graph. From this graph, it can be seen that the larger the volume of the metal plate (the volume of the flesh part excluding holes) (the smaller the porosity), the higher the thermal conductivity will be proportionally, but the apparent stiffness in the in-plane direction will increase at an accelerating rate. I know what will happen. From this, in order to satisfy both thermal conductivity and stress relaxation, the volume of the metal plate should be 70 vol% or less (porosity is 30 vol% or more), and more preferably the volume of the metal plate should be 20 vol% or more. It has been found that it is preferable to set the porosity in a range of 70 vol% or less (porosity of 30 vol% or more and 80 vol% or less).
(Experimental conditions)
・Bonding layer thickness: 200μm
・Solder: SAC305 (Sn-3mass%Ag-0.5mass%Cu)
・Thermal conductivity measuring device: TCM1001 (manufactured by Resca Co., Ltd.)
 すなわち本発明は、以下の発明を包含する。
 (1) ある部材に密着して該部材との間で熱伝導を行う接合層からなる熱伝導接合構造であって、前記接合層は、厚み方向に延びて表裏両板面に開口する複数の貫通孔が形成される金属製の多孔ベース板と、該多孔ベース板の前記貫通孔内に充填された充填部、および該充填部に連続して少なくとも一方の板面上に広がるはんだ膜からなるはんだ固化体とを備え、前記はんだ膜が、対面する前記部材に密着して接合されている、熱伝導接合構造。
That is, the present invention includes the following inventions.
(1) A thermally conductive bonding structure consisting of a bonding layer that closely adheres to a certain member and conducts heat between the bonding layer and the bonding layer, which has a plurality of bonding layers extending in the thickness direction and opening on both the front and back surfaces. Consisting of a metal porous base plate in which a through hole is formed, a filling part filled in the through hole of the porous base plate, and a solder film that extends on at least one plate surface in continuity with the filling part. a solder solidified body, and the solder film is closely bonded to the facing member.
 (2) 二部材の間に設けられて両部材を接合し、且つ二部材の一方から他方に熱を伝える接合層からなる熱伝導接合構造であって、前記接合層は、厚み方向に延びて表裏両板面に開口する複数の貫通孔が形成され、二部材の間に介装される金属製の多孔ベース板と、該多孔ベース板の前記貫通孔内に充填された充填部、および該充填部に連続して両板面上に広がるはんだ膜からなるはんだ固化体とを備え、前記はんだ膜が、対面する二部材にそれぞれ密着して接合されている、熱伝導接合構造。 (2) A thermally conductive bonding structure consisting of a bonding layer provided between two members to bond the two members and transmit heat from one of the two members to the other, the bonding layer extending in the thickness direction. a metal porous base plate having a plurality of through holes opening on both the front and back surfaces and interposed between the two members; a filling portion filled in the through holes of the porous base plate; A solidified solder body consisting of a solder film extending over both plate surfaces continuously from the filling part, and the solder film is closely joined to two members facing each other.
 (3) 前記接合層を構成する多孔ベース板の前記貫通孔による空隙率が、30~80vol%である、(1)又は(2)記載の熱伝導接合構造。 (3) The thermally conductive bonding structure according to (1) or (2), wherein the porous base plate constituting the bonding layer has a porosity due to the through holes of 30 to 80 vol%.
 (4) ある部材に密着して該部材との間で熱伝導を行う接合層を設けてなる熱伝導接合方法であって、前記接合層として、厚み方向に延びて表裏両板面に開口する複数の貫通孔が形成された金属製の多孔ベース板を設け、はんだ材を、該多孔ベース板の前記貫通孔内に充填させ、且つ当該充填部に連続して少なくとも一方の板面上に広がるはんだ膜を形成した状態で固化させたはんだ固化体を設け、前記はんだ膜が、対面する前記部材に密着して接合される、熱伝導接合方法。 (4) A thermally conductive bonding method in which a bonding layer is provided that closely adheres to a certain member and conducts heat between the member, and the bonding layer extends in the thickness direction and opens on both the front and back surfaces of the plate. A metal porous base plate in which a plurality of through holes are formed is provided, and a solder material is filled in the through holes of the porous base plate, and spreads on at least one plate surface continuously from the filled portion. A thermally conductive bonding method, wherein a solidified solder body is provided with a solder film formed thereon, and the solder film is closely bonded to the member facing the member.
 (5) 二部材の間に、該二部材の一方から他方に熱を伝える接合層を設けて両部材を接合する熱伝導接合方法であって、前記接合層として、厚み方向に延びて表裏両板面に開口する複数の貫通孔が形成された金属製の多孔ベース板を、二部材の間に介装するとともに、はんだ材を、該多孔ベース板の前記貫通孔内に充填させ、且つ当該充填部に連続して両板面上に広がるはんだ膜を形成した状態で固化させたはんだ固化体を設け、前記はんだ膜が、対面する二部材にそれぞれ密着して接合される、熱伝導接合方法。 (5) A thermally conductive bonding method in which a bonding layer that transfers heat from one of the two members to the other is provided between the two members to bond the two members, the bonding layer being a bonding layer that extends in the thickness direction and has a A metal porous base plate in which a plurality of through holes opening to the plate surface are formed is interposed between the two members, and a solder material is filled in the through holes of the porous base plate, and A thermally conductive bonding method in which a solidified solder is provided in a filled part and solidified with a solder film that spreads continuously over both plate surfaces, and the solder film is bonded to two facing members in close contact with each other. .
 (6) 前記多孔ベース板の表裏一方又は双方の板面とこれに対面する前記部材との間に、前記はんだ材を介装し、前記部材、前記多孔ベース板、および前記はんだ材を重ねた状態で加熱し、前記はんだ材を溶融させて、該はんだ材を多孔ベース板の前記貫通孔内に充填させ、且つ当該充填部に連続して両板面上に広がるはんだ膜を形成した状態で、冷却固化させることにより、前記はんだ固化体を形成してなる、(4)又は(5)記載の熱伝導接合方法。 (6) The solder material is interposed between one or both of the front and back surfaces of the porous base plate and the member facing thereto, and the member, the porous base plate, and the solder material are stacked. heating the porous base plate to melt the solder material, filling the through hole of the porous base plate with the solder material, and forming a solder film that extends continuously over the filled portion and on both plate surfaces. The thermally conductive bonding method according to (4) or (5), wherein the solidified solder is formed by cooling and solidifying.
 (7) 前記二部材、前記多孔ベース板、および前記はんだ材を上下方向に重ね、且つ前記多孔ベース板の上面側に前記はんだ材を配した状態で、前記加熱し、前記はんだ材を溶融させて、該はんだ材の自重および上側の部材からの荷重により、前記貫通孔に落ち込み充填させるとともに、前記貫通孔の下側の開口から漏出して多孔ベース板および下側の部材の間の隙間に広がり下側の板面上の前記はんだ膜を形成し、前記貫通孔に落ち込まなかったはんだ材残部が上側の板面上の前記はんだ膜を形成する、(6)記載の熱伝導接合方法。 (7) With the two members, the porous base plate, and the solder material stacked vertically, and the solder material placed on the upper surface side of the porous base plate, heat is applied to melt the solder material. Then, due to the solder material's own weight and the load from the upper member, it falls into the through hole and fills it, and leaks from the lower opening of the through hole and fills the gap between the porous base plate and the lower member. The thermally conductive bonding method according to (6), wherein the solder film is spread out on the lower plate surface, and the remaining solder material that did not fall into the through hole forms the solder film on the upper plate surface.
 (8) (1)記載の熱伝導接合構造を有するヒートシンクであって、冷却対象物に当接される当接面を有し、該当接面を通じて冷却対象物の熱が伝達される、前記ある部材としての金属製の吸熱体と、該吸熱体の前記当接面と反対側の面に板面の一部領域が接合された、前記多孔ベース板としての金属製の板状フィンとを備え、前記板状フィンに、板面に開口する複数の貫通孔が形成されており、前記板状フィンの前記一部領域に、該領域に形成されている貫通孔内に充填された前記充填部、および該充填部に連続して前記板面の上に広がる前記はんだ膜からなる前記はんだ固化体を有し、前記はんだ膜が対面する前記吸熱体に密着し、該吸熱体との間で熱伝導を行う前記接合層が形成され、前記板状フィンの前記吸熱体の周囲に突出した残部領域の貫通孔を通じて、熱を外部に放熱する、ヒートシンク。 (8) A heat sink having the thermally conductive bonding structure described in (1), wherein the heat sink has a contact surface that comes into contact with the object to be cooled, and the heat of the object to be cooled is transferred through the contact surface. A metal heat absorber as a member, and a metal plate-like fin as the porous base plate, a part of the plate surface of which is joined to a surface opposite to the contact surface of the heat absorber. , a plurality of through holes opening to the plate surface are formed in the plate-shaped fin, and the filling portion is filled in the through-hole formed in the partial area of the plate-shaped fin. , and has the solder solidified body made of the solder film that extends over the plate surface continuously in the filling part, and the solder film is in close contact with the facing heat absorbing body, and heat is not generated between the solder film and the heat absorbing body. A heat sink in which the conductive bonding layer is formed and heat is radiated to the outside through a through hole in a remaining region protruding around the heat absorbing body of the plate-like fin.
 (9) (2)記載の熱伝導接合構造を有するヒートシンクであって、冷却対象物に当接される当接面を有し、該当接面を通じて冷却対象物の熱が伝達される、前記二部材のうちの一方の部材としての金属製の吸熱体と、該吸熱体の前記当接面と反対側の面に板面の一部領域が接合された、前記多孔ベース板としての金属製の第1の板状フィンと、前記第1の板状フィンの前記板面と反対側の板面の前記一部領域に対応する領域に接合された、前記二部材のうちの他方の部材としての金属製の連結体と、該連結体の前記第1の板状フィンに接合する面と反対側の面に、板面の一部領域が接合された金属製の第2の板状フィンとを備え、前記第1の板状フィン及び第2の板状フィンに、それぞれ板面に開口する複数の貫通孔が形成されており、前記第1の板状フィンの前記一部領域に、該領域に形成されている貫通孔内に充填された前記充填部、および該充填部に連続して両板面の上に広がる前記はんだ膜からなる前記はんだ固化体を有し、前記はんだ膜が対面する前記吸熱体および前記連結体にそれぞれ密着し、該吸熱体から連結体に熱を伝える前記接合層が形成され、前記第1の板状フィンの前記吸熱体及び前記連結体の周囲に突出した残部領域の貫通孔、及び前記第2の板状フィンの前記連結体の周囲に突出した残部領域の貫通孔を通じて、熱を外部に放熱する、ヒートシンク。 (9) A heat sink having the thermally conductive bonding structure described in (2), which has a contact surface that comes into contact with the object to be cooled, and the heat of the object to be cooled is transmitted through the contact surface. A metal heat absorber as one of the members, and a metal heat absorber as the porous base plate, a part of the plate surface being joined to the surface opposite to the contact surface of the heat absorber. A first plate-like fin and the other member of the two members joined to a region corresponding to the partial region of the plate surface opposite to the plate surface of the first plate-like fin. A metal connecting body and a metal second plate-like fin having a partial region of the plate surface joined to a surface of the connecting body opposite to the surface joined to the first plate-like fin. The first plate-like fin and the second plate-like fin each have a plurality of through-holes opening to the plate surface, and the partial area of the first plate-like fin has a plurality of through holes formed in the first plate-like fin and the second plate-like fin. The solidified solder body is comprised of the filling part filled in a through hole formed in the through hole, and the solder film extending continuously to the filling part and spreading over both plate surfaces, and the solder film faces each other. The bonding layer is formed to be in close contact with the heat absorbing body and the connecting body, respectively, and transmitting heat from the heat absorbing body to the connecting body, and the remaining portion of the first plate-shaped fin protrudes around the heat absorbing body and the connecting body. A heat sink that radiates heat to the outside through a through hole in the region and a through hole in the remaining region protruding around the connecting body of the second plate-like fin.
 (10) ベース板と、該ベース板の上に接合される回路基板と、該回路基板の上に接合される半導体チップとを備え、前記ベース板と回路基板との二部材間、及び前記回路基板と半導体チップとの二部材間のうち、少なくとも一つの二部材間に、前記接合層からなる(2)記載の熱伝導接合構造を有する、半導体装置。 (10) Comprising a base plate, a circuit board bonded onto the base plate, and a semiconductor chip bonded onto the circuit board, and between the two members of the base plate and the circuit board, and the circuit board. A semiconductor device having the thermally conductive bonding structure according to (2), which includes the bonding layer between at least one of the two members, a substrate and a semiconductor chip.
 (11) 回路基板及び半導体チップが積層されるベース板の下面側に、ヒートシンクが設けられ、該ベース板とヒートシンクとの二部材間に、前記接合層からなる(2)記載の熱伝導接合構造を有する、半導体装置。 (11) The thermally conductive bonding structure according to (2), wherein a heat sink is provided on the lower surface side of the base plate on which the circuit board and the semiconductor chip are stacked, and the bonding layer is provided between the two members of the base plate and the heat sink. A semiconductor device having:
 本発明の熱伝導接合構造/熱伝導接合方法によれば、貫通孔にはんだが充填された金属製の多孔ベース板が、接合面に平行な水平方向に伸縮容易で、応力を緩和することができ、また、はんだ膜に連続する充填部がアンカー効果を奏するため、破損や剥離を防止することができる。すなわち、板厚方向の複数の貫通孔を有する多孔ベース板は、水平方向には変形して応力を緩和することができ、また各貫通孔に充填されるはんだの充填部は板厚方向に棒状となるため、水平方向への屈曲が容易で、該方向への応力の緩和をより促進する。はんだ膜に連続して各貫通孔に充填されている充填部は、アンカーとしてはんだ膜と多孔ベース板との強固な一体性、密着性を維持する。 According to the thermally conductive bonding structure/thermal conductive bonding method of the present invention, the metal porous base plate whose through holes are filled with solder can easily expand and contract in the horizontal direction parallel to the bonding surface, thereby relieving stress. Moreover, since the filled portion continuous with the solder film has an anchor effect, damage and peeling can be prevented. In other words, a porous base plate having multiple through holes in the thickness direction can be deformed in the horizontal direction to relieve stress, and the solder filled portion in each through hole is shaped like a rod in the thickness direction. Therefore, it is easy to bend in the horizontal direction, and the relaxation of stress in this direction is further promoted. The filling portion that is continuous with the solder film and filled in each through hole serves as an anchor to maintain strong integrity and adhesion between the solder film and the porous base plate.
 また、部材に密着するはんだ膜を備えるが、はんだが充填される貫通孔の周囲は金属の板材であるため、板厚(厚み)方向に沿った熱抵抗は小さく、部材に対する優れた密着性及び熱伝導性を有する。貫通孔にはんだが充填されるため、空隙の存在による熱抵抗の増加も回避できるとともに、はんだ固化体と多孔ベース板とは、貫通孔に充填された充填部を通じて、広い接触面積を有しており、はんだ膜が受けた熱を多孔ベース板に効率よく伝熱することができる。 In addition, it has a solder film that tightly adheres to the component, but since the through hole that is filled with solder is surrounded by a metal plate, the thermal resistance along the plate thickness direction is small, and it has excellent adhesion to the component. Has thermal conductivity. Since the through-holes are filled with solder, an increase in thermal resistance due to the presence of voids can be avoided, and the solidified solder and the porous base plate have a wide contact area through the filled portions filled in the through-holes. Therefore, the heat received by the solder film can be efficiently transferred to the porous base plate.
 さらに、多孔ベース板の各貫通孔が厚み方向に延びていることから、接合面に直交する板厚方向には優れた剛性を保つ。また各貫通孔に充填されたはんだの充填部は、上記のとおり板厚方向に伸びる棒状となるため、軸心方向となる板厚方向の剛性をさらに向上させる。したがって、組み付けの際の精度も容易に得られる。すなわち、設計通りの厚み、平行度等の精度で、低い熱抵抗、優れた熱伝導性の接合構造が実現できる。 Furthermore, since each through hole in the porous base plate extends in the thickness direction, excellent rigidity is maintained in the thickness direction perpendicular to the joint surface. Further, since the solder filling portion filled in each through hole has a rod shape extending in the plate thickness direction as described above, the rigidity in the plate thickness direction, which is the axial direction, is further improved. Therefore, accuracy during assembly can be easily achieved. In other words, a bonded structure with low thermal resistance and excellent thermal conductivity can be realized with the designed thickness, parallelism, and other precision.
 ここで、接合層を構成する多孔ベース板の貫通孔による空隙率が、30~80vol%であるものが好ましい。上記空隙率が30%未満であれば、応力緩和効果が小さくなりやすい。また、80%より大きくなると、縦の剛性が小さくなり、全体として変形しやすく、厚み等の接合部の精度を維持できなくなりやすい。 Here, it is preferable that the porous base plate constituting the bonding layer has a porosity of 30 to 80 vol% due to the through holes. If the porosity is less than 30%, the stress relaxation effect tends to be small. Moreover, when it is larger than 80%, the vertical rigidity decreases, the whole is easily deformed, and the accuracy of the joints such as thickness cannot be maintained.
 また、多孔ベース板の表裏一方又は双方の板面とこれに対面する部材との間に、はんだ材を介装し、部材、多孔ベース板、およびはんだ材を重ねた状態で加熱し、はんだ材を溶融させて、該はんだ材を多孔ベース板の貫通孔内に充填させ、且つ当該充填部に連続して両板面上に広がるはんだ膜を形成した状態で、冷却固化させることにより、はんだ固化体を形成する方法によれば、効率良く、精度の良い本発明に係る熱伝導接合構造を実現できる。 In addition, a solder material is interposed between one or both of the front and back surfaces of the porous base plate and the member facing it, and the member, the porous base plate, and the solder material are heated in a stacked state, and the solder material is The solder is solidified by melting the solder material, filling the through holes of the porous base plate, and cooling and solidifying the solder film forming a solder film that spreads continuously over both plate surfaces in the filled part. According to the method of forming the body, it is possible to realize the thermally conductive bonding structure according to the present invention efficiently and with high precision.
 二部材の間に設ける場合は、二部材、多孔ベース板、およびはんだ材を上下方向に重ね、且つ前記多孔ベース板の上面側にはんだ材を配した状態で、加熱し、はんだ材を溶融させて、該はんだ材の自重および上側の部材からの荷重により、貫通孔に落ち込み充填させるとともに、貫通孔の下側の開口から漏出して多孔ベース板および下側の部材の間の隙間に広がり下側の板面上の前記はんだ膜を形成し、前記貫通孔に落ち込まなかったはんだ材残部が上側の板面上の前記はんだ膜を形成する方法により、効率良く、精度の良い本発明の熱伝導接合構造を実現できる。 When installing between two members, the two members, the porous base plate, and the solder material are stacked vertically, and the solder material is placed on the upper surface of the porous base plate, and heated to melt the solder material. Due to the weight of the solder material and the load from the upper member, the solder material falls into the through hole and fills it, and it also leaks from the lower opening of the through hole and spreads into the gap between the porous base plate and the lower member. The method of forming the solder film on the side plate surface and using the remaining solder material that did not fall into the through hole to form the solder film on the upper plate surface allows efficient and accurate heat conduction of the present invention. A bonded structure can be realized.
 また、本発明に係る熱伝導接合構造を有する上記ヒートシンクによれば、吸熱体と板状フィンとの接合部に優れた密着性及び熱伝導性を有し、優れた放熱性を備えるとともに、接合部に生じる応力を緩和でき、剥離を防止できる。また、高い剛性及び組み付け精度を備え、設計通りの強度及び精度を備えた良質のヒートシンクを安定的に効率よく提供できる。また、本発明に係る熱伝導接合構造によって、さらに連結体と第2の板状フィンが接合され、より放熱性に優れた同じく高品質のヒートシンクも安定的に効率よく提供できる。 Further, according to the heat sink having the thermally conductive bonding structure according to the present invention, the bonding portion between the heat absorbing body and the plate-like fin has excellent adhesion and thermal conductivity, and has excellent heat dissipation property. It is possible to alleviate the stress generated in the parts and prevent peeling. Furthermore, it is possible to stably and efficiently provide a high-quality heat sink that has high rigidity and assembly accuracy, and has the strength and precision as designed. In addition, with the thermally conductive bonding structure according to the present invention, the connecting body and the second plate-shaped fin are further bonded, and a similarly high-quality heat sink with better heat dissipation performance can be stably and efficiently provided.
 また、本発明に係る熱伝導接合構造を有する上記半導体装置によれば、ベース板と回路基板との間、又は回路基板と半導体チップとの間の接合部に、優れた密着性及び熱伝導性を有するとともに、接合部に生じる応力を緩和でき、破壊や剥離を防止できる。よって、効率的な放熱と応力緩和が達成でき、半導体装置の小型化・長寿命化が期待できる。また、高い剛性及び組み付け精度を備え、設計通りの強度及び精度を備えた良質の半導体装置を安定的に効率よく提供できる。 Further, according to the semiconductor device having the thermally conductive bonding structure according to the present invention, the bonding portion between the base plate and the circuit board or between the circuit board and the semiconductor chip has excellent adhesion and thermal conductivity. At the same time, it is possible to alleviate the stress generated at the joint and prevent breakage and peeling. Therefore, efficient heat dissipation and stress relaxation can be achieved, and semiconductor devices can be expected to be made smaller and have a longer lifespan. Furthermore, it is possible to stably and efficiently provide high-quality semiconductor devices that have high rigidity and assembly accuracy, and have strength and precision as designed.
 また、回路基板及び半導体チップが積層されるベース板の下面側に、ヒートシンクが設けられ、該ベース板とヒートシンクとの二部材間に、前記接合層からなるものでは、ベース板とヒートシンクの間の接合部に、優れた密着性及び熱伝導性を有し、優れた放熱性を有するとともに、接合部に生じる応力を緩和でき、ヒートシンクの剥離を防止できる。また、高い剛性及び組み付け精度を備え、設計通りの強度及び精度を備えた良質の半導体装置を安定的に効率よく提供できる。 Further, a heat sink is provided on the lower surface side of the base plate on which the circuit board and the semiconductor chip are laminated, and between the two members of the base plate and the heat sink, in the case of the bonding layer, there is a gap between the base plate and the heat sink. The bonded portion has excellent adhesion and thermal conductivity, has excellent heat dissipation, and can alleviate stress generated at the bonded portion, thereby preventing the heat sink from peeling off. Furthermore, it is possible to stably and efficiently provide high-quality semiconductor devices that have high rigidity and assembly accuracy, and have strength and precision as designed.
本発明の熱伝導接合構造の概念を示す斜視図。FIG. 1 is a perspective view showing the concept of a thermally conductive joining structure of the present invention. 同じく熱伝導接合構造の概念を示す断面図。FIG. 3 is a cross-sectional view showing the concept of the heat conductive bonding structure. 本発明の熱伝導接合方法を示す説明図。FIG. 2 is an explanatory diagram showing the thermally conductive bonding method of the present invention. 同じく熱伝導接合構造の変形例を示す説明図。Explanatory drawing showing a modification of the thermally conductive bonding structure. 二部材の間に設ける本発明の熱伝導接合構造の概念を示す斜視図。FIG. 1 is a perspective view showing the concept of a thermally conductive joining structure of the present invention provided between two members. 同じく熱伝導接合構造の概念を示す断面図。FIG. 3 is a cross-sectional view showing the concept of the heat conductive bonding structure. 二部材を接合する本発明の熱伝導接合方法を示す説明図。FIG. 2 is an explanatory diagram showing the thermally conductive joining method of the present invention for joining two members. 本発明の熱伝導接合構造を有するヒートシンクの例を示す斜視図。FIG. 1 is a perspective view showing an example of a heat sink having a thermally conductive bonding structure according to the present invention. 同じく断面図。Also a cross-sectional view. 同じくヒートシンクの製造の手順を示す説明図。An explanatory diagram showing the procedure for manufacturing the heat sink. 二部材の間に設ける本発明の熱伝導接合構造を有するヒートシンクの例を示す斜視図。FIG. 1 is a perspective view showing an example of a heat sink having a thermally conductive bonding structure of the present invention provided between two members. 同じく断面図。Also a cross-sectional view. 同じくヒートシンクの製造の手順を示す説明図。An explanatory diagram showing the procedure for manufacturing the heat sink. 二部材の間に設ける本発明の熱伝導接合構造を有する半導体装置の例を示す断面図。FIG. 1 is a cross-sectional view showing an example of a semiconductor device having a thermally conductive bonding structure of the present invention provided between two members. 厚み方向の熱伝導率と面内方向の見かけの剛性の変化を示すグラフGraph showing changes in thermal conductivity in the thickness direction and apparent stiffness in the in-plane direction
 次に、本発明の実施形態を添付図面に基づき詳細に説明する。 Next, embodiments of the present invention will be described in detail based on the accompanying drawings.
 まず、図1a~図5に基づき、本発明の熱伝導接合構造、熱伝導接合方法について説明する。本発明に係る熱伝導接合構造S1は、図1a、図1bに示すように、ある部材9に密着して該部材9との間で熱伝導を行う接合層10からなる構造である。 First, the thermally conductive bonding structure and thermally conductive bonding method of the present invention will be explained based on FIGS. 1a to 5. The thermally conductive bonding structure S1 according to the present invention, as shown in FIGS. 1a and 1b, is a structure consisting of a bonding layer 10 that closely adheres to a certain member 9 and conducts heat between the member 9.
 接合層10は、図1a、図1b及び図2に示すように、厚み方向に延びて表裏両板面に開口する複数の貫通孔111が形成される金属製の多孔ベース板11と、該多孔ベース板11の前記貫通孔111内に充填された充填部121、および該充填部に連続して少なくとも一方の板面上に広がるはんだ膜122,123からなるはんだ固化体12とを備えている。そして、はんだ膜122により対面する前記部材9に密着して接合されている。 As shown in FIGS. 1a, 1b, and 2, the bonding layer 10 includes a metal porous base plate 11 in which a plurality of through holes 111 extending in the thickness direction and opening on both the front and back surfaces are formed, and It is provided with a filling part 121 filled in the through hole 111 of the base plate 11, and a solidified solder body 12 consisting of solder films 122 and 123 extending continuously from the filling part on at least one plate surface. Then, it is closely bonded to the facing member 9 by a solder film 122.
 このような本発明の熱伝導接合構造S1では、多孔ベース板11が金属製であり、熱抵抗が小さく、部材9に対する優れた密着性及び熱伝導性を有すると同時に、厚み方向に延びる貫通孔111を有する板材であるため、水平方向に変形容易で、応力を緩和することができる。また、はんだ膜122に連続して各貫通孔111に充填されている充填部121は、アンカーとしてはんだ膜122と多孔ベース板11との強固な一体性、密着性を維持する。 In such a thermally conductive joint structure S1 of the present invention, the porous base plate 11 is made of metal, has low thermal resistance, has excellent adhesion to the member 9, and has excellent thermal conductivity, and at the same time has through holes extending in the thickness direction. Since it is a plate material having a diameter of 111, it can be easily deformed in the horizontal direction and stress can be alleviated. Further, the filling portion 121 that is continuous with the solder film 122 and filled in each through hole 111 serves as an anchor to maintain strong integrity and adhesion between the solder film 122 and the porous base plate 11.
 また、部材に密着するはんだ膜を備えるが、はんだが充填される貫通孔の周囲は金属の板材であるため、板厚方向に沿った熱抵抗は小さく、部材に対する優れた密着性及び熱伝導性を有する。はんだ固化体12と多孔ベース板11との間も、貫通孔111に充填された充填部121を通じて、広い接触面積を有し、はんだ膜122が受けた熱を多孔ベース板11に効率よく伝熱することができる。また、貫通孔111は厚み方向に延びているので、多孔ベース板11は厚み方向に優れた剛性を保つ。さらに各貫通孔111に充填されたはんだの充填部121は、上記のとおり板厚方向に伸びる棒状となるため、軸心方向となる板厚方向の剛性をさらに向上させる。したがって、組み付けの際の精度も容易に得られる。すなわち、設計通りの厚み、平行度等の精度で、低い熱抵抗、優れた熱伝導性の接合構造が実現できるのである。 In addition, it has a solder film that tightly adheres to the component, but since the through hole filled with solder is surrounded by a metal plate, the thermal resistance along the plate thickness direction is small, and it has excellent adhesion and thermal conductivity to the component. has. There is also a wide contact area between the solder solidification body 12 and the porous base plate 11 through the filling part 121 filled in the through hole 111, and the heat received by the solder film 122 is efficiently transferred to the porous base plate 11. can do. Further, since the through holes 111 extend in the thickness direction, the porous base plate 11 maintains excellent rigidity in the thickness direction. Furthermore, since the solder filling portion 121 filled in each through hole 111 has a rod shape extending in the thickness direction as described above, the rigidity in the thickness direction, which is the axial direction, is further improved. Therefore, accuracy during assembly can be easily achieved. In other words, it is possible to realize a bonded structure with low thermal resistance and excellent thermal conductivity with the designed thickness, parallelism, and other precision.
 本例では、接合層10の部材9と反対側には、他の部材が接合されてもよいし、されなくてもよい。後述のヒートシンクの例で示すように、接合層10を構成する多孔ベース板11が、接合層10を構成する領域以外に、該領域から外方に延びる残部領域を備え、該領域に接合以外の他の機能を有するもの(後述のヒートシンクの場合は冷却用の流体を通す冷却フィンとしての機能を有する)や、図3に示すように、非接合領域を介して、第二の接合領域を設けたもの等、広く応用可能である。 In this example, another member may or may not be bonded to the side of the bonding layer 10 opposite to the member 9. As shown in the example of a heat sink described below, the porous base plate 11 constituting the bonding layer 10 has a remaining region extending outward from the region in addition to the region constituting the bonding layer 10, and the porous base plate 11 that constitutes the bonding layer 10 has a remaining region extending outward from the region, and has a remaining region extending outward from the region constituting the bonding layer 10. A heat sink that has another function (in the case of a heat sink described later, it has a function as a cooling fin for passing cooling fluid), or a second bonded area is provided through a non-bonded area as shown in Figure 3. It can be applied to a wide range of applications.
 多孔ベース板11は、アルミニウムや鉄、銅など、熱伝導性に優れた金属材料やその合金を広く用いることができる。銅などの場合は、好ましくは、金属凝固法で成形された一方向に伸びた複数の気孔を有するロータス型ポーラス金属成形体を、気孔の伸びる方向に直交する方向に切断加工した多孔板が用いられる。ただし、本発明の多孔ベース板には、ドリルやレーザ等で貫通孔を設けたものも勿論含む。ロータス型ポーラス金属成形体は、高圧ガス法(Pressurized Gas Method)(例えば日本国特許第4235813号公報開示の方法)や、熱分解法(Thermal Decomposition Method)など、公知の方法で成形することができる。このようにロータス型ポーラス金属成形体から切り出した多孔板の貫通孔は、前記切断加工により分断された前記気孔である。 The porous base plate 11 can be made of a wide variety of metal materials with excellent thermal conductivity, such as aluminum, iron, and copper, and alloys thereof. In the case of copper, preferably, a perforated plate is used, which is obtained by cutting a lotus-shaped porous metal molded body formed by a metal coagulation method and having a plurality of pores extending in one direction in a direction perpendicular to the direction in which the pores extend. It will be done. However, the porous base plate of the present invention also includes those in which through holes are formed using a drill, laser, or the like. The lotus-shaped porous metal molded body can be formed by a known method such as a pressurized gas method (for example, the method disclosed in Japanese Patent No. 4235813) or a thermal decomposition method. . The through-holes of the porous plate cut out from the lotus-type porous metal molded body in this manner are the pores divided by the cutting process.
 貫通孔以外に貫通していない有底の孔も存在するが(気孔の途切れた位置で切断された場合の当該孔)、このような有底の孔もはんだ固化体12との接触面積を増大させる効果があり、また、後述のヒートシンクの場合も、表面積を増大させて該板面からの放熱を促進する効果がある。このように、ロータス型ポーラス金属成形体から切り出した多孔板を用いることで、多孔ベース板11を低コスト且つ容易に得ることができる。多孔ベース板11の貫通孔111による気孔率、すなわち多孔ベース板11に孔が存在しないと仮定した体積に対する、貫通孔111内部の合計体積の割合は、20~70体積%であることが好ましい。また、貫通孔111の開口径(直径)は、0.01~1.00mmであることが好ましい。 In addition to through holes, there are also holes with a bottom that do not penetrate through the hole (the hole is cut at a point where the pores are interrupted), but such a hole with a bottom also increases the contact area with the solder solidified body 12. In addition, in the case of a heat sink described below, the surface area is increased to promote heat dissipation from the plate surface. In this way, by using a porous plate cut out from a lotus-type porous metal molded body, the porous base plate 11 can be easily obtained at low cost. The porosity due to the through holes 111 of the porous base plate 11, that is, the ratio of the total volume inside the through holes 111 to the volume assuming that no holes exist in the porous base plate 11 is preferably 20 to 70% by volume. Further, the opening diameter (diameter) of the through hole 111 is preferably 0.01 to 1.00 mm.
 はんだ固化体12のはんだ(はんだ合金)は、使用環境、たとえば接合対象の部材と授受する熱の温度や想定される応力等や、多孔ベース板11の素材、貫通孔の大きさ、板厚等により求められる濡れ性等の特性などに応じて、公知のものから適宜選択すればよい。特に、Sn-Ag系,Sn-Cu系,Sn-Bi系,Sn-In系,あるいはそれらを基に第3元素を含んだはんだ合金が好ましい。 The solder (solder alloy) of the solder solidified body 12 is determined depending on the usage environment, such as the temperature of the heat exchanged with the parts to be joined, the expected stress, etc., the material of the porous base plate 11, the size of the through hole, the plate thickness, etc. The material may be appropriately selected from known materials depending on the properties such as wettability required by the method. Particularly preferred are Sn--Ag based, Sn--Cu based, Sn--Bi based, Sn--In based solder alloys, or solder alloys based on these and containing a third element.
 充填部121は、多孔ベース板11の貫通孔111内に充填されたはんだが固化したものであり、はんだ膜122、123と一体化されている。後述するように、多孔ベース板11に重ねて配置されたはんだ板を溶かして、はんだ自ら貫通孔111内に流入して固化させるため、多孔ベース板11の表面(貫通孔の内壁を含む)にはんだの濡れ性を高めるフラックスその他のコーティング剤や金属膜を塗布/蒸着等することも好ましい。 The filling portion 121 is solidified solder filled in the through hole 111 of the porous base plate 11, and is integrated with the solder films 122 and 123. As will be described later, in order to melt the solder plate placed over the porous base plate 11 and to cause the solder to flow into the through holes 111 and solidify, the surface of the porous base plate 11 (including the inner walls of the through holes) is melted. It is also preferable to apply/evaporate a flux or other coating agent or metal film that increases solder wettability.
 はんだ膜122,123は、上記充填部121に連続して少なくとも一方の板面上に広がるはんだの膜であり、接合対象の部材との密着性、付着性を高める膜である。本例では部材9に接合する側のはんだ膜122以外に、反対側の面にもはんだ膜123が形成されているが、はんだ膜123は省略することもできる。はんだ膜122と部材9とは強固に密着し、熱伝達を行うことができる。従来のはんだ接合と異なり、はんだ膜122は比較的薄く、当該はんだ膜122により全体の剛性や精度が低下することもない。また、はんだ膜122に連続して形成されている上記充填部121がアンカーとして機能し、多孔ベース板11からの剥離も防止できる。 The solder films 122 and 123 are solder films that extend over at least one plate surface continuously from the filling portion 121, and are films that improve adhesion and adhesion to the members to be joined. In this example, in addition to the solder film 122 on the side to be joined to the member 9, a solder film 123 is also formed on the opposite side, but the solder film 123 can be omitted. The solder film 122 and the member 9 are tightly adhered to each other and can perform heat transfer. Unlike conventional solder joints, the solder film 122 is relatively thin, and the solder film 122 does not reduce overall rigidity or accuracy. Further, the filling portion 121 formed continuously on the solder film 122 functions as an anchor, and can prevent separation from the porous base plate 11.
 図2は、本例の熱伝導接合構造S1を形成する手順、すなわち、部材9に密着して該部材との間で熱伝導を行う接合層10を設けてなる熱伝導接合方法を示している。まず、部材9のうえに、はんだ板120と多孔ベース板11を重ねておく。そして、加熱炉などで加熱することではんだ板120を溶融する。これにより、はんだ板120のはんだは、多孔ベース板11の貫通孔111を通じて上昇し、上面側に染み出てはんだ膜123を形成して固化する。 FIG. 2 shows a procedure for forming the thermally conductive bonding structure S1 of this example, that is, a thermally conductive bonding method in which a bonding layer 10 is provided in close contact with a member 9 and conducts heat between the member and the member 9. . First, the solder plate 120 and the porous base plate 11 are stacked on the member 9. Then, the solder plate 120 is melted by heating with a heating furnace or the like. As a result, the solder on the solder plate 120 rises through the through holes 111 of the porous base plate 11, oozes out to the upper surface side, forms a solder film 123, and solidifies.
 貫通孔111に入らず残ったはんだは、多孔ベース板11と部材9との間にはんだ膜122を形成して固化する。また、貫通孔111内で固まったはんだは、上記充填部121を形成する。このようにして、部材9に密着接合した接合層10(熱伝導接合構造S1)が形成される。はんだ膜122と多孔ベース板11との剥離は、充填部121のアンカー効果で防止できるが、本例のように充填部121の先に充填部121同士を連結して一体化するはんだ膜123が形成されていることで、よりアンカー効果が高まる。 The remaining solder that did not enter the through holes 111 forms a solder film 122 between the porous base plate 11 and the member 9 and solidifies. Furthermore, the solder solidified within the through hole 111 forms the filling portion 121 . In this way, the bonding layer 10 (thermal conductive bonding structure S1) closely bonded to the member 9 is formed. Peeling of the solder film 122 and the porous base plate 11 can be prevented by the anchor effect of the filling part 121, but as in this example, a solder film 123 that connects and integrates the filling parts 121 is provided at the end of the filling part 121. This structure further enhances the anchor effect.
 本例では、はんだ板120を部材9と多孔ベース板11との間に設けて加熱したが、さらに上面側、すなわちはんだ膜123が形成される側にもはんだ板を配置したうえで加熱することも好ましい。これによりはんだ膜123をより確実に形成することができる。また、はんだ板120に加えて貫通孔111内にはんだの粉末を充填しておくことも好ましい。 In this example, the solder plate 120 was placed between the member 9 and the porous base plate 11 and heated, but it is also possible to place a solder plate on the upper surface side, that is, on the side where the solder film 123 is formed, and then heat it. is also preferable. This allows the solder film 123 to be formed more reliably. Further, in addition to the solder plate 120, it is also preferable to fill the through hole 111 with solder powder.
 次に、二部材の間に設けられて両部材を接合し、二部材の一方から他方に熱を伝える接
合層からなる熱伝導接合構造S2の例について、図4a、図4b及び図5に基づき説明する。
Next, an example of a thermally conductive bonding structure S2 consisting of a bonding layer provided between two members to bond the two members and transmit heat from one of the two members to the other will be explained based on FIGS. 4a, 4b, and 5. explain.
 本熱伝導接合構造S2の接合層10Aは、図4a及び図4bに示すように、二部材91、92の間に介装される上記多孔ベース板11と、該多孔ベース板11の貫通孔111内に充填された充填部121、および該充填部121に連続して両板面上に広がるはんだ膜122、123からなるはんだ固化体12とを備え、はんだ膜122、123が、対面する二部材91、92にそれぞれ密着して接合されている構造である。このような本発明の熱伝導接合構造S2では、同様に、部材91、92に対する優れた密着性及び熱伝導性を有すると同時に、厚み方向に延びる貫通孔111を有する板材であるため、水平方向に変形容易で、応力を緩和することができる。特に2部材の接合は2部材の熱収縮の違い等により接合部に応力が生じやすいが、本発明をこれを吸収して破壊、破損を未然に防止する。 As shown in FIGS. 4a and 4b, the bonding layer 10A of the thermally conductive bonding structure S2 includes the porous base plate 11 interposed between the two members 91 and 92, and the through-hole 111 of the porous base plate 11. A solidified solder body 12 consisting of a filling part 121 filled in the interior and solder films 122 and 123 extending continuously from the filling part 121 onto both plate surfaces, and the solder films 122 and 123 are two members facing each other. 91 and 92, respectively, in close contact with each other. The thermally conductive joint structure S2 of the present invention similarly has excellent adhesion and thermal conductivity to the members 91 and 92, and since it is a plate material having through holes 111 extending in the thickness direction, It is easy to deform and can relieve stress. In particular, when joining two members, stress is likely to occur at the joint due to differences in thermal contraction between the two members, but the present invention absorbs this stress and prevents breakage and damage.
 はんだ膜122、123と多孔ベース板11との間は、充填部121及び互いにはんだ膜をアンカーとして強固な一体性、密着性を維持する。また、同様に、設計通りの厚み、平行度等の精度で、低い熱抵抗、優れた熱伝導性の接合構造が実現できる。多孔ベース板11の素材、貫通孔111の気孔率、開口径などの構成、はんだの素材、その他の形態は、上記の構造S1と同様に考えることができるので、その説明を省略する。 Strong integrity and adhesion are maintained between the solder films 122 and 123 and the porous base plate 11 using the solder film as an anchor between the filling portion 121 and each other. Similarly, a bonded structure with low thermal resistance and excellent thermal conductivity can be realized with the thickness, parallelism, and other precision as designed. The material of the porous base plate 11, the porosity of the through-holes 111, the configuration such as the opening diameter, the material of the solder, and other forms can be considered in the same manner as in the above structure S1, and therefore their explanations will be omitted.
 図5は、本例の熱伝導接合構造S2を形成する手順、すなわち、二部材91、92の間に、該二部材91、92の一方から他方に熱を伝える接合層10を設けてなる熱伝導接合方法を示している。まず、一方の部材91のうえに、はんだ板120、多孔ベース板11及びはんだ板120を順に重ね、さらにそのうえに他方の部材92を重ねておく。そして、ヒータ4や加熱炉に入れる等して加熱することにより、双方のはんだ板120を溶融する。これにより、はんだ板120のはんだは、上下からそれぞれ多孔ベース板11の貫通孔111に充填され、且つ当該充填部121に連続して両板面上に広がるはんだ膜122、123が形成される。 FIG. 5 shows the procedure for forming the thermally conductive bonded structure S2 of this example. A conduction bonding method is shown. First, the solder plate 120, the porous base plate 11, and the solder plate 120 are stacked in this order on one member 91, and then the other member 92 is stacked on top of that. Then, both solder plates 120 are melted by heating them by placing them in a heater 4 or a heating furnace. As a result, the solder of the solder plate 120 is filled into the through holes 111 of the porous base plate 11 from above and below, respectively, and solder films 122 and 123 are formed that continue from the filled portions 121 and spread over both plate surfaces.
 はんだ板120が溶融して貫通孔111へ流入するはんだの量は、重力で流入する上側のはんだほど多くなるため、はんだ膜122、123の厚みを同じ程度にするためには、上側のはんだ板120の方を厚くし、はんだの量を多くすることが好ましい。本例では多孔ベース板11の上下両側にはんだ板120を配置したが、たとえば上側のはんだ板のみとし、下側は省略することも可能である。下側を省略しても、貫通孔111から下方に流出したはんだが広がり、下側のはんだ膜122を形成することも可能である。 The amount of solder that melts from the solder plate 120 and flows into the through hole 111 increases as the solder on the upper side flows in due to gravity. It is preferable to make 120 thicker and use a larger amount of solder. In this example, the solder plates 120 are arranged on both the upper and lower sides of the porous base plate 11, but it is also possible, for example, to use only the upper solder plate and omit the lower side. Even if the lower side is omitted, the solder flowing downward from the through hole 111 can spread and form the lower solder film 122.
 その他の構成、変形例については、上述の図1a~図3の構造と同様であり、その説明は省略する。 The other configurations and modifications are the same as the structures shown in FIGS. 1a to 3 above, and their explanations will be omitted.
 次に、熱伝導接合構造S1により構成されたヒートシンクの例について、図6a、図6b及び図7に基づき説明する。 Next, an example of a heat sink configured by the thermally conductive bonding structure S1 will be described based on FIGS. 6a, 6b, and 7.
 本例のヒートシンク2は、特開2018-73869号公報(日本国)に記載のヒートシンクの改良版にあたり、本熱伝導接合構造S1を用いることで、より効率良く、精度よく製造でき、吸熱体から冷却フィンへの熱伝導に優れ、且つ、接合強度も優れたものとして構成したものである。具体的には、図6a、図6bに示すように、CPU等の冷却対象物に当接される当接面20bを有し、該当接面を通じて冷却対象物の熱が伝達される金属製の吸熱体20と、該吸熱体20の当接面20bと反対側の面20aに板面の一部領域R1が接合された金属製の板状フィン21とを備えている。板状フィン21には、板面に開口する複数の貫通孔111が形成されている。 The heat sink 2 of this example is an improved version of the heat sink described in Japanese Unexamined Patent Publication No. 2018-73869 (Japan), and by using the present thermally conductive bonding structure S1, it can be manufactured more efficiently and accurately, and from the heat absorber. It is constructed to have excellent heat conduction to the cooling fins and excellent bonding strength. Specifically, as shown in FIGS. 6a and 6b, it is made of metal and has a contact surface 20b that comes into contact with an object to be cooled such as a CPU, and the heat of the object to be cooled is transferred through the contact surface. It includes a heat absorbing body 20 and a metal plate-shaped fin 21 having a partial region R1 of the plate surface joined to a surface 20a of the heat absorbing body 20 opposite to the contact surface 20b. A plurality of through holes 111 are formed in the plate-like fin 21 and open to the plate surface.
 そして、吸熱体20と板状フィン21の接合層10が、吸熱体20を上記部材9とし、且つ、板状フィン21を多孔ベース板11として、板状フィン21の前記一部領域R1に、該領域R1の貫通孔111内に充填された上記充填部121、および該充填部121に連続して板面の上に広がる上記はんだ膜122、123からなる前記はんだ固化体12により構成されている。はんだ膜122は、対面する吸熱体20に密着し、該吸熱体20との間で効率良く熱伝導を行う。 Then, the bonding layer 10 of the heat absorbing body 20 and the plate-like fin 21 is formed in the partial region R1 of the plate-like fin 21, with the heat absorbing body 20 as the member 9 and the plate-like fin 21 as the porous base plate 11, The solidified solder body 12 is composed of the filled portion 121 filled in the through hole 111 of the region R1, and the solder films 122 and 123 that extend over the plate surface continuously from the filled portion 121. . The solder film 122 is in close contact with the facing heat absorbing body 20 and efficiently conducts heat between it and the heat absorbing body 20 .
 板状フィン21の吸熱体20の周囲に突出した残部領域R2は、貫通孔111を通過する流体に熱を放熱する放熱フィンとして機能する。本例のヒートシンク2によれば、熱伝導接合構造S1の上記作用効果、すなわち従来の上記ヒートシンクのように放熱フィンの板端部で吸熱体側壁に接合していたものに比べ、優れた密着性及び熱伝導性を有し、応力も緩和でき、優れた接合強度を有する。 The remaining region R2 of the plate-shaped fin 21 that protrudes around the heat absorbing body 20 functions as a heat radiating fin that radiates heat to the fluid passing through the through hole 111. According to the heat sink 2 of this example, the above-mentioned effects of the thermally conductive bonding structure S1 are achieved, that is, superior adhesion is achieved compared to the conventional heat sink in which the plate end of the heat dissipation fin is bonded to the side wall of the heat absorber. It has thermal conductivity, can relieve stress, and has excellent bonding strength.
 また、はんだ膜122に連続して各貫通孔111に充填されている充填部121は、アンカーとしてはんだ膜122と板状フィン21との強固な一体性、密着性を維持する。また、設計通りの厚み、平行度等の精度で、低い熱抵抗、優れた熱伝導性の接合構造が容易に実現できる。本例では、板状フィン21の吸熱体20と反対側の面にもはんだ膜123が形成されているが、この膜は省略することもできる。 Furthermore, the filling portion 121 that is continuous with the solder film 122 and filled in each through hole 111 serves as an anchor to maintain strong integrity and adhesion between the solder film 122 and the plate-shaped fin 21. In addition, a bonded structure with low thermal resistance and excellent thermal conductivity can be easily realized with the thickness, parallelism, and other precision as designed. In this example, a solder film 123 is also formed on the surface of the plate-shaped fin 21 opposite to the heat absorbing body 20, but this film can be omitted.
 本ヒートシンク2は、図7に示すように、吸熱体20の上面に、平面視同一形状のはんだ板120を置き、さらに板状フィン21を重ねておく。板状フィン21は、中心の領域R1がはんだ板120に載置され、その周囲に残部領域R2が位置するように置かれる。そして、ヒータ4や加熱炉に入れる等してはんだ板120を加熱・溶融させることで、はんだ板120のはんだが、板状フィン21の中心側の領域R1の貫通孔111を通じて上昇し、上面側に染み出てはんだ膜123を形成して固化する。 As shown in FIG. 7, in this heat sink 2, a solder plate 120 having the same shape in plan view is placed on the upper surface of the heat absorbing body 20, and plate-shaped fins 21 are further stacked. The plate-shaped fin 21 is placed such that the center region R1 is placed on the solder plate 120, and the remaining region R2 is located around the center region R1. Then, by heating and melting the solder plate 120 by placing it in the heater 4 or a heating furnace, the solder of the solder plate 120 rises through the through hole 111 in the region R1 on the center side of the plate-shaped fin 21, and moves toward the upper surface side. The solder oozes out, forms a solder film 123, and solidifies.
 貫通孔111に入らず残ったはんだは、板状フィン21と吸熱体20との間にはんだ膜122を形成して固化する。また、貫通孔111内で固まったはんだは、充填部121を形成する。このようにして、吸熱体20に密着接合した接合層10(熱伝導接合構造S1)が形成される。 The remaining solder that did not enter the through holes 111 forms a solder film 122 between the plate-like fins 21 and the heat absorbing body 20 and solidifies. Furthermore, the solder solidified within the through hole 111 forms a filling portion 121 . In this way, the bonding layer 10 (thermal conductive bonding structure S1) closely bonded to the heat absorbing body 20 is formed.
 吸熱体20は、金属製の中実な立方体形状とされているが、このような構成に何ら限定されるものではない。中実ではなく中空としてもよい。材料はアルミニウムや鉄、銅など従来のヒートシンクに使用されるものを広く適用できる。また、ヒートパイプを内装したもの、或いはヒートパイプ自体で構成することもできる。 Although the heat absorbing body 20 has a solid cubic shape made of metal, it is not limited to such a configuration. It may be hollow instead of solid. A wide range of materials used for conventional heat sinks, such as aluminum, iron, and copper, can be used. Moreover, it can also be configured with a heat pipe built-in or the heat pipe itself.
 板状フィン21を構成する金属材料としては、吸熱体20と同様、アルミや鉄、銅など従来のヒートシンクの板状フィンに使用されるものを広く適用できる。本例では、銅製であり、具体的には、金属凝固法で成形された一方向に伸びた複数の気孔を有するロータス型ポーラス金属成形体を、気孔の伸びる方向に交差する方向に切断加工したものである。ロータス型ポーラス金属成形体から切り出した板材には、貫通孔111以外に貫通していない有底の孔も存在するが、このような有底の孔も放熱フィンとして機能する領域R2の板面の表面積を増大させる効果があり、該板面からの放熱を促進する効果がある。板状フィン21の形状は方形としたが、これに何ら限定されず、多角形や円形など、方形以外の形状とすることも勿論できる。 As for the metal material constituting the plate-shaped fins 21, similarly to the heat absorbing body 20, materials used in plate-shaped fins of conventional heat sinks, such as aluminum, iron, and copper, can be widely used. In this example, a lotus-shaped porous metal molded body made of copper and having a plurality of pores extending in one direction, which was molded by a metal coagulation method, was cut in a direction that intersects the direction in which the pores extend. It is something. In addition to the through hole 111, there are also holes with a bottom that do not penetrate through the plate material cut out from the lotus-type porous metal molded body. This has the effect of increasing the surface area and promoting heat radiation from the plate surface. Although the shape of the plate-like fin 21 is rectangular, it is not limited to this at all, and of course it can be made into a shape other than a rectangle, such as a polygon or a circle.
 次に、熱伝導接合構造S2を有するヒートシンクの例について、図8a、図8b及び図9に基づき説明する。 Next, an example of a heat sink having a thermally conductive bonding structure S2 will be described based on FIGS. 8a, 8b, and 9.
 本例のヒートシンク2Aは、同じく特開2018-73869号公報(日本国)に記載のヒートシンクの改良版にあたり、本熱伝導接合構造S2を用いることで、より効率良く、精度よく製造でき、吸熱体から冷却フィンへの熱伝導に優れ、且つ、接合強度も優れたものとして構成したものである。 The heat sink 2A of this example is an improved version of the heat sink also described in Japanese Patent Application Publication No. 2018-73869 (Japan), and by using the present heat conductive bonding structure S2, it can be manufactured more efficiently and accurately, and the heat absorber The structure has excellent heat conduction from the cooling fins to the cooling fins, and excellent bonding strength.
 具体的には、図8a、図8bに示すように、冷却対象物に当接される当接面20bを有し、該当接面を通じて冷却対象物の熱が伝達される金属製の吸熱体20と、該吸熱体20の当接面20bと反対側の面20aに,板面の一部領域R3が接合された金属製の第1の板状フィン21と、第1の板状フィン21の前記板面と反対側の板面の前記一部領域R3に対応する領域に接合された金属製の連結体22と、該連結体22の前記第1の板状フィン21に接合する面と反対側の面に、板面の一部領域R5が接合された金属製の第2の板状フィン21Aとを備えている。 Specifically, as shown in FIGS. 8a and 8b, a metal heat absorber 20 has a contact surface 20b that contacts the object to be cooled, and the heat of the object to be cooled is transferred through the contact surface. and a first plate-like fin 21 made of metal with a partial region R3 of the plate surface joined to the surface 20a on the opposite side to the contact surface 20b of the heat absorbing body 20; A metal connecting body 22 joined to a region corresponding to the partial region R3 on the plate surface opposite to the plate surface, and a surface of the connecting body 22 opposite to the surface joined to the first plate-like fin 21. A second plate-shaped fin 21A made of metal is provided on the side surface thereof, to which a partial region R5 of the plate surface is joined.
 そして、吸熱体20、板状フィン21及び連結体22の接合層10Aが、吸熱体20を上記二部材のうちの一方の部材91とし、第1の板状フィン21を多孔ベース板11とし、連結体22を上記二部材のうちの他方の部材92として、板状フィン21の前記一部領域R3に、該領域R3の貫通孔111内に充填された上記充填部121、および該充填部121に連続して上下の板面に広がる上記はんだ膜122、123からなる前記はんだ固化体12により構成されている。はんだ膜122、123は、それぞれ対面する吸熱体20、連結体22に密着し、該吸熱体20、連結体22との間でそれぞれ効率良く熱伝導を行う。連結体22と第2の板状フィン21Aとの接合は、上述のヒートシンク2の例と同じ接合層10からなる熱伝導接合構造S1により接合されている。 The bonding layer 10A of the heat absorbing body 20, the plate-like fins 21, and the connecting body 22 uses the heat absorbing body 20 as one of the two members 91, and the first plate-like fin 21 as the porous base plate 11, The connecting body 22 is the other member 92 of the two members, and the filling portion 121 filled in the through hole 111 of the region R3 is provided in the partial region R3 of the plate-like fin 21, and the filling portion 121 The solidified solder body 12 is composed of the solder films 122 and 123 that continuously spread over the upper and lower plate surfaces. The solder films 122 and 123 are in close contact with the heat absorbing body 20 and the connecting body 22 facing each other, and conduct heat efficiently between the heat absorbing body 20 and the connecting body 22, respectively. The connecting body 22 and the second plate-like fin 21A are joined by a thermally conductive joining structure S1 made of the same joining layer 10 as in the example of the heat sink 2 described above.
 第1の板状フィン21の吸熱体20及び連結体22の周囲に突出した残部領域R4、第2の板状フィン21Aの連結体22の周囲に突出した残部領域R6は、それぞれ貫通孔111を通過する流体に熱を放熱する放熱フィンとして機能する。本例のヒートシンク2Aによれば、熱伝導接合構造S1,S2の上記作用効果、すなわち従来の上記ヒートシンクのように放熱フィンの板端部で吸熱体側壁に接合していたものに比べ、優れた密着性及び熱伝導性を有し、応力も緩和でき、優れた接合強度を有する。 The remaining region R4 of the first plate-like fin 21 that protrudes around the heat absorbing body 20 and the connecting body 22, and the remaining region R6 of the second plate-like fin 21A that protrudes around the connecting body 22 have through holes 111, respectively. It functions as a radiation fin that radiates heat to the fluid passing through it. According to the heat sink 2A of this example, the above-mentioned effects of the thermally conductive bonding structures S1 and S2 are superior to those of the conventional heat sink in which the plate ends of the heat dissipation fins are bonded to the side wall of the heat absorber. It has good adhesion and thermal conductivity, can relieve stress, and has excellent bonding strength.
 本例では、連結体22を一つのみとし、板面に垂直な軸方向に、板状フィン21、21Aの2枚の放熱フィンを並設した構造とされているが、熱伝導接合構造S2を二つ以上軸方向に連設して連結体22を二つ以上設け、3枚以上の放熱フィンを並設したヒートシンクとすることもできる。本発明の熱伝導接合構造S1、S2によれば、このように複数枚の放熱フィンを互いに平行に精度よく組み付けることができるとともに、各フィンに吸熱した熱を効率よく伝達し、各フィンから効率よく放熱させることができる。 In this example, there is only one connecting body 22, and two heat dissipating fins, the plate fins 21 and 21A, are arranged in parallel in the axial direction perpendicular to the plate surface. It is also possible to provide a heat sink with two or more connecting bodies 22 arranged in series in the axial direction, and three or more radiation fins arranged in parallel. According to the heat conductive joint structures S1 and S2 of the present invention, a plurality of heat dissipating fins can be assembled in parallel with each other with high precision, and the heat absorbed by each fin can be efficiently transmitted, and the heat can be efficiently transmitted from each fin. It can dissipate heat well.
 本ヒートシンク2は、図9に示すように、吸熱体20の上面側に、はんだ板120、板状フィン21、はんだ板120、連結体22、はんだ板120、板状フィン21Aを順に置き、重ねておく。板状フィン21、21Aは、中心の領域R3、R5がそれぞれはんだ板120の位置に対応するように載置され、その周囲に残部領域R4、R6が位置するように置かれる。そして、ヒータ4や加熱炉などで加熱することで各はんだ板120を溶融させることで、各はんだ板120のはんだが、板状フィン21、21Aの中心側の領域R3,R5の貫通孔111に浸入するとともに、各フィンの両面にはんだ膜122、123を形成して固化する。 As shown in FIG. 9, the present heat sink 2 is constructed by placing a solder plate 120, a plate-like fin 21, a solder plate 120, a connecting body 22, a solder plate 120, and a plate-like fin 21A in this order on the upper surface side of a heat absorbing body 20. I'll keep it. The plate-shaped fins 21 and 21A are placed so that the center regions R3 and R5 correspond to the positions of the solder plate 120, respectively, and the remaining regions R4 and R6 are located around the center regions R3 and R5, respectively. Then, by melting each solder plate 120 by heating with the heater 4, heating furnace, etc., the solder of each solder plate 120 is transferred to the through holes 111 of the center side regions R3 and R5 of the plate-shaped fins 21 and 21A. At the same time, solder films 122 and 123 are formed on both surfaces of each fin and solidified.
 各フィンの貫通孔111内で固まったはんだは、それぞれ充填部121を形成する。こ
のようにして、板状フィン21が吸熱体20及び連結体22に密着接合した接合層10A
(熱伝導接合構造S2)と、板状フィン21Aが連結体22に密着接合した接合増10(
熱伝導接合構造S1)とが形成される。その他の構造、素材、変形例等は、上記ヒートシ
ンク2と同じであるので、その説明は省略する。
The solder solidified within the through hole 111 of each fin forms a filling portion 121, respectively. In this way, the bonding layer 10A in which the plate-like fins 21 are tightly bonded to the heat absorbing body 20 and the connecting body 22
(thermal conductive joint structure S2) and a joint extension 10 (in which the plate-like fins 21A are tightly joined to the connecting body 22) (
A thermally conductive bonding structure S1) is formed. Other structures, materials, modifications, etc. are the same as those of the heat sink 2 described above, so their explanations will be omitted.
 次に、熱伝導接合構造S2を有する半導体装置の例について、図10に基づき説明する。 Next, an example of a semiconductor device having a thermally conductive junction structure S2 will be described based on FIG. 10.
 本例の半導体装置3は、ベース板30と、該ベース板30の上に接合される回路基板31と、該回路基板31の上に接合される半導体チップ32と、ベース板30の下面側に接合されるヒートシンク33とを備えており、ベース板30と回路基板31との間、回路基板31と半導体チップ32との間、ベース板30とヒートシンク33との間に、それぞれ上記接合層10Aからなる本熱伝導接合構造S2を設けたものである。符号34はボンディングワイヤ、35はターミナル(端子)、36はケース、37は充填剤をそれぞれ示している。 The semiconductor device 3 of this example includes a base plate 30, a circuit board 31 bonded onto the base plate 30, a semiconductor chip 32 bonded onto the circuit board 31, and a semiconductor chip 32 bonded onto the bottom surface of the base plate 30. It is provided with a heat sink 33 to be bonded, and between the base plate 30 and the circuit board 31, between the circuit board 31 and the semiconductor chip 32, and between the base plate 30 and the heat sink 33, from the bonding layer 10A to The present heat conductive bonding structure S2 is provided. Reference numeral 34 indicates a bonding wire, 35 a terminal, 36 a case, and 37 a filler.
 このように本発明の熱伝導接合構造S2を用いた半導体装置3では、これら接合部に優れた密着性及び熱伝導性を有し、且つ、接合部に生じる応力を緩和し、破壊や剥離を未然に防止する耐久性に優れたものとなるため、効率的な放熱と応力緩和が達成でき、装置の小型化・長寿命化が期待できる。また、高い剛性や組み付け精度を備えるため、設計通りの強度及び精度を備えた良質の装置を安定的に効率よく提供することができる。本例では、各接合部にそれぞれ熱伝導接合構造S2を用いたが、一部の接合部にのみ採用してものでも勿論よい。また、半導体装置の構造は、図示したものに何ら限定されず、各種の装置に適用できることは言うまでもない。 In this manner, the semiconductor device 3 using the thermally conductive bonding structure S2 of the present invention has excellent adhesion and thermal conductivity in these bonded portions, and also relieves stress generated in the bonded portions and prevents breakage and peeling. Since it has excellent durability and prevents such occurrences, efficient heat dissipation and stress relaxation can be achieved, and equipment can be expected to be smaller and have a longer lifespan. Furthermore, since it has high rigidity and assembly accuracy, it is possible to stably and efficiently provide a high-quality device that has the strength and precision as designed. In this example, the thermally conductive bonding structure S2 is used for each bonding portion, but it may of course be adopted only for some bonding portions. Furthermore, it goes without saying that the structure of the semiconductor device is not limited to that shown in the drawings, and can be applied to various types of devices.
 以上、本発明の実施形態について説明したが、本発明はこうした実施例に何ら限定されるものではなく、本発明の要旨を逸脱しない範囲において種々なる形態で実施し得ることは勿論である。 Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments in any way, and it goes without saying that the present invention can be implemented in various forms without departing from the gist of the present invention.
 S1、S2 熱伝導接合構造
 2、2A ヒートシンク
 3 半導体装置
 4 ヒータ
 9 部材
 10、10A 接合層
 11 多孔ベース板
 12 はんだ固化体
 20 吸熱体
 20a 面
 20b 当接面
 21、21A 板状フィン
 22 連結体
 30 ベース板
 31 回路基板
 32 半導体チップ
 33 ヒートシンク
 91、92 部材
 111 貫通孔
 120 はんだ板
 121 充填部
 122、123 はんだ膜
 R1-R6 領域 
 
S1, S2 Thermal conductive bonding structure 2, 2A Heat sink 3 Semiconductor device 4 Heater 9 Member 10, 10A Bonding layer 11 Porous base plate 12 Solidified solder 20 Heat absorber 20a Surface 20b Contact surface 21, 21A Plate fin 22 Connecting body 30 Base plate 31 Circuit board 32 Semiconductor chip 33 Heat sink 91, 92 Member 111 Through hole 120 Solder plate 121 Filling part 122, 123 Solder film R1-R6 area

Claims (11)

  1.  ある部材に密着して該部材との間で熱伝導を行う接合層からなる熱伝導接合構造であって、
     前記接合層は、
     厚み方向に延びて表裏両板面に開口する複数の貫通孔が形成される金属製の多孔ベース板と、
     該多孔ベース板の前記貫通孔内に充填された充填部、および該充填部に連続して少なくとも一方の板面上に広がるはんだ膜からなるはんだ固化体とを備え、
     前記はんだ膜が、対面する前記部材に密着して接合されている、
     熱伝導接合構造。
    A thermally conductive bonding structure consisting of a bonding layer that closely adheres to a certain member and conducts heat between the member,
    The bonding layer is
    a metal porous base plate having a plurality of through holes extending in the thickness direction and opening on both the front and back surfaces;
    A filling part filled in the through-hole of the porous base plate, and a solidified solder body consisting of a solder film that extends on at least one plate surface continuously from the filling part,
    the solder film is closely bonded to the facing member;
    Heat conductive joint structure.
  2.  二部材の間に設けられて両部材を接合し、且つ二部材の一方から他方に熱を伝える接合層からなる熱伝導接合構造であって、
     前記接合層は、
     厚み方向に延びて表裏両板面に開口する複数の貫通孔が形成され、二部材の間に介装される金属製の多孔ベース板と、
     該多孔ベース板の前記貫通孔内に充填された充填部、および該充填部に連続して両板面上に広がるはんだ膜からなるはんだ固化体とを備え、
     前記はんだ膜が、対面する二部材にそれぞれ密着して接合されている、
     熱伝導接合構造。
    A thermally conductive bonding structure comprising a bonding layer provided between two members to bond the two members and transmit heat from one of the two members to the other,
    The bonding layer is
    a metal porous base plate interposed between two members, in which a plurality of through holes extending in the thickness direction and opening on both the front and back surfaces are formed;
    A filling part filled in the through-hole of the porous base plate, and a solidified solder body consisting of a solder film that extends over both plate surfaces continuously from the filling part,
    The solder film is closely bonded to two members facing each other,
    Heat conductive joint structure.
  3.  前記接合層を構成する多孔ベース板の前記貫通孔による空隙率が、30~80vol%である、請求項1又は2記載の熱伝導接合構造。 The heat conductive bonding structure according to claim 1 or 2, wherein the porous base plate constituting the bonding layer has a porosity due to the through holes of 30 to 80 vol%.
  4.  ある部材に密着して該部材との間で熱伝導を行う接合層を設けてなる熱伝導接合方法であって、
     前記接合層として、
     厚み方向に延びて表裏両板面に開口する複数の貫通孔が形成された金属製の多孔ベース板を設け、
     はんだ材を、該多孔ベース板の前記貫通孔内に充填させ、且つ当該充填部に連続して少なくとも一方の板面上に広がるはんだ膜を形成した状態で固化させたはんだ固化体を設け、
     前記はんだ膜が、対面する前記部材に密着して接合される、
     熱伝導接合方法。
    A thermally conductive bonding method comprising providing a bonding layer that is in close contact with a certain member and conducts heat between the member,
    As the bonding layer,
    A metal porous base plate is provided with a plurality of through holes extending in the thickness direction and opening on both the front and back surfaces,
    A solidified solder body is provided by filling the through holes of the porous base plate with a solder material and solidifying the solder material in a state where a solder film is formed continuously in the filled portion and spread over at least one plate surface,
    the solder film is closely bonded to the facing member;
    Thermal conduction bonding method.
  5.  二部材の間に、該二部材の一方から他方に熱を伝える接合層を設けて両部材を接合する熱伝導接合方法であって、
     前記接合層として、
     厚み方向に延びて表裏両板面に開口する複数の貫通孔が形成された金属製の多孔ベース板を、二部材の間に介装するとともに、
     はんだ材を、該多孔ベース板の前記貫通孔内に充填させ、且つ当該充填部に連続して両板面上に広がるはんだ膜を形成した状態で固化させたはんだ固化体を設け、
     前記はんだ膜が、対面する二部材にそれぞれ密着して接合される、
     熱伝導接合方法。
    A thermally conductive joining method for joining two members by providing a joining layer between the two members that transmits heat from one of the two members to the other,
    As the bonding layer,
    A metal porous base plate having a plurality of through holes extending in the thickness direction and opening on both the front and back surfaces is interposed between the two members, and
    Filling the through-holes of the porous base plate with a solder material, and providing a solidified solder body that is solidified to form a solder film that extends continuously over both plate surfaces in the filled portion,
    The solder film is closely bonded to two members facing each other,
    Thermal conduction bonding method.
  6.  前記多孔ベース板の表裏一方又は双方の板面とこれに対面する前記部材との間に、前記はんだ材を介装し、
     前記部材、前記多孔ベース板、および前記はんだ材を重ねた状態で加熱し、前記はんだ材を溶融させて、該はんだ材を多孔ベース板の前記貫通孔内に充填させ、且つ当該充填部に連続して両板面上に広がるはんだ膜を形成した状態で、冷却固化させることにより、前記はんだ固化体を形成してなる、
     請求項4又は5記載の熱伝導接合方法。
    interposing the solder material between one or both of the front and back surfaces of the porous base plate and the member facing thereto,
    The member, the porous base plate, and the solder material are heated in a stacked state to melt the solder material and fill the through hole of the porous base plate with the solder material, and the solder material is continuous with the filled part. The solidified solder is formed by cooling and solidifying the solder film that spreads over both plate surfaces.
    The thermally conductive bonding method according to claim 4 or 5.
  7.  前記二部材、前記多孔ベース板、および前記はんだ材を上下方向に重ね、且つ前記多孔ベース板の上面側に前記はんだ材を配した状態で、前記加熱し、前記はんだ材を溶融させて、
     該はんだ材の自重および上側の部材からの荷重により、前記貫通孔に落ち込み充填させるとともに、
     前記貫通孔の下側の開口から漏出して多孔ベース板および下側の部材の間の隙間に広がり下側の板面上の前記はんだ膜を形成し、
     前記貫通孔に落ち込まなかったはんだ材残部が上側の板面上の前記はんだ膜を形成する、
     請求項6記載の熱伝導接合方法。
    The two members, the porous base plate, and the solder material are stacked vertically, and the solder material is placed on the upper surface side of the porous base plate, and the heating is performed to melt the solder material,
    Due to the solder material's own weight and the load from the upper member, the solder material sinks into the through hole and fills it,
    leaking from the lower opening of the through hole and spreading into the gap between the porous base plate and the lower member, forming the solder film on the lower plate surface;
    The remaining solder material that did not fall into the through hole forms the solder film on the upper plate surface.
    The thermally conductive bonding method according to claim 6.
  8.  請求項1記載の熱伝導接合構造を有するヒートシンクであって、
     冷却対象物に当接される当接面を有し、該当接面を通じて冷却対象物の熱が伝達される、前記ある部材としての金属製の吸熱体と、
     該吸熱体の前記当接面と反対側の面に板面の一部領域が接合された、前記多孔ベース板としての金属製の板状フィンとを備え、
     前記板状フィンに、板面に開口する複数の貫通孔が形成されており、
     前記板状フィンの前記一部領域に、該領域に形成されている貫通孔内に充填された前記充填部、および該充填部に連続して前記板面の上に広がる前記はんだ膜からなる前記はんだ固化体を有し、前記はんだ膜が対面する前記吸熱体に密着し、該吸熱体との間で熱伝導を行う前記接合層が形成され、
     前記板状フィンの前記吸熱体の周囲に突出した残部領域の貫通孔を通じて、熱を外部に放熱する、
     ヒートシンク。
    A heat sink having the thermally conductive bonding structure according to claim 1,
    A metal heat absorber as the certain member, which has a contact surface that comes into contact with the object to be cooled, and the heat of the object to be cooled is transferred through the contact surface;
    a metal plate-shaped fin serving as the porous base plate, a part of the plate surface being joined to a surface opposite to the contact surface of the heat absorbing body;
    A plurality of through holes opening to the plate surface are formed in the plate-like fin,
    The filling part filled in a through hole formed in the partial area of the plate-like fin, and the solder film extending over the plate surface continuously from the filling part. The bonding layer is formed, which has a solidified solder, is in close contact with the heat absorbing body facing the solder film, and conducts heat between the solder film and the heat absorbing body,
    radiating heat to the outside through a through hole in a remaining region protruding around the heat absorbing body of the plate-like fin;
    heat sink.
  9.  請求項2記載の熱伝導接合構造を有するヒートシンクであって、
     冷却対象物に当接される当接面を有し、該当接面を通じて冷却対象物の熱が伝達される、前記二部材のうちの一方の部材としての金属製の吸熱体と、
     該吸熱体の前記当接面と反対側の面に板面の一部領域が接合された、前記多孔ベース板としての金属製の第1の板状フィンと、
     前記第1の板状フィンの前記板面と反対側の板面の前記一部領域に対応する領域に接合された、前記二部材のうちの他方の部材としての金属製の連結体と、
     該連結体の前記第1の板状フィンに接合する面と反対側の面に、板面の一部領域が接合された金属製の第2の板状フィンとを備え、
     前記第1の板状フィン及び第2の板状フィンに、それぞれ板面に開口する複数の貫通孔が形成されており、
     前記第1の板状フィンの前記一部領域に、該領域に形成されている貫通孔内に充填された前記充填部、および該充填部に連続して両板面の上に広がる前記はんだ膜からなる前記はんだ固化体を有し、前記はんだ膜が対面する前記吸熱体および前記連結体にそれぞれ密着し、該吸熱体から連結体に熱を伝える前記接合層が形成され、
     前記第1の板状フィンの前記吸熱体及び前記連結体の周囲に突出した残部領域の貫通孔、及び前記第2の板状フィンの前記連結体の周囲に突出した残部領域の貫通孔を通じて、熱を外部に放熱する、
     ヒートシンク。
    A heat sink having the thermally conductive bonding structure according to claim 2,
    a metal heat absorber as one of the two members, which has a contact surface that comes into contact with the object to be cooled, and through which the heat of the object to be cooled is transferred;
    a metal first plate-shaped fin serving as the porous base plate, a part of the plate surface of which is joined to a surface opposite to the contact surface of the heat absorbing body;
    a metal connector as the other member of the two members, which is joined to a region corresponding to the partial region of the plate surface opposite to the plate surface of the first plate-shaped fin;
    A second plate-shaped fin made of metal to which a partial region of the plate-shaped fin is bonded is provided on a surface of the connecting body opposite to the surface bonded to the first plate-shaped fin,
    A plurality of through holes each opening to the plate surface are formed in the first plate-like fin and the second plate-like fin,
    The filling portion is filled in a through hole formed in the partial region of the first plate-like fin, and the solder film extends over both plate surfaces continuously from the filling portion. The bonding layer is formed, having the solidified solder body consisting of the solder film, in which the solder film is in close contact with the facing heat absorbing body and the connecting body, respectively, and transmitting heat from the heat absorbing body to the connecting body,
    Through a through-hole in a remaining region of the first plate-like fin that protrudes around the heat absorbing body and the connecting body, and a through-hole in a remaining region that protrudes around the connecting body of the second plate-like fin, dissipates heat to the outside,
    heat sink.
  10.  ベース板と、
     該ベース板の上に接合される回路基板と、
     該回路基板の上に接合される半導体チップとを備え、
     前記ベース板と回路基板との二部材間、及び前記回路基板と半導体チップとの二部材間のうち、少なくとも一つの二部材間に、前記接合層からなる請求項2記載の熱伝導接合構造を有する、半導体装置。
    base plate and
    a circuit board bonded onto the base plate;
    a semiconductor chip bonded onto the circuit board;
    The thermally conductive bonding structure according to claim 2, wherein the bonding layer is provided between at least one of the two members of the base plate and the circuit board and the two members of the circuit board and the semiconductor chip. A semiconductor device.
  11.  回路基板及び半導体チップが積層されるベース板の下面側に、ヒートシンクが設けられ、
     該ベース板とヒートシンクとの二部材間に、前記接合層からなる請求項2記載の熱伝導接合構造を有する、半導体装置。
     
    A heat sink is provided on the bottom side of the base plate on which the circuit board and semiconductor chips are stacked,
    3. A semiconductor device having a thermally conductive bonding structure according to claim 2, comprising the bonding layer between two members, the base plate and the heat sink.
PCT/JP2023/018545 2022-08-25 2023-05-18 Heat conductive joining structure, heat conductive joining method, heat sink having said heat conductive joining structure, and semiconductor device having said heat conductive joining structure WO2024042791A1 (en)

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JPH0878586A (en) * 1994-09-09 1996-03-22 Kyocera Corp Semiconductor chip housing use package
JP2016042538A (en) * 2014-08-18 2016-03-31 三菱マテリアル株式会社 Substrate for heat sink-equipped power module, method for manufacturing the same, power module
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