WO2024041280A1 - 频率选择表面与空间滤波方法 - Google Patents

频率选择表面与空间滤波方法 Download PDF

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Publication number
WO2024041280A1
WO2024041280A1 PCT/CN2023/108731 CN2023108731W WO2024041280A1 WO 2024041280 A1 WO2024041280 A1 WO 2024041280A1 CN 2023108731 W CN2023108731 W CN 2023108731W WO 2024041280 A1 WO2024041280 A1 WO 2024041280A1
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Prior art keywords
metal strip
frequency selective
selective surface
metal
band
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PCT/CN2023/108731
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English (en)
French (fr)
Inventor
傅随道
田素成
桑联佳
熊锡刚
高翔
毛胤电
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中兴通讯股份有限公司
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Publication of WO2024041280A1 publication Critical patent/WO2024041280A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices

Definitions

  • Embodiments of the present application relate to the field of communications, specifically, to a frequency selective surface and spatial filtering method.
  • the deployment of 5G active antennas faces three major problems: 1. It is impossible to add new sites; 2. Existing sites deploy 4G passive antennas and cannot deploy additional 5G active antennas; 3. Existing sites can deploy additional 5G active antennas. However, due to the limited height, the best signal coverage cannot be obtained. To this end, a solution for integrating 4G passive antenna and 5G active antenna - A+P (Activeplus Passive, A+P) antenna was proposed.
  • the A+P antenna is a multi-frequency co-aperture antenna that uses an integrated interleaving solution to embed the 5G active antenna into the 4G passive antenna from the back to achieve integrated deployment.
  • A+P antenna performance can be aligned with the existing network and supports separate maintenance and independent deployment of active and passive antennas, which can greatly reduce operating costs and meet the requirements for smooth equipment upgrades.
  • FSS Frequency Selecitve Surface
  • Embodiments of the present application provide a frequency selective surface and spatial filtering method to at least solve the problem in related technologies that 4G passive antennas cannot be perfectly integrated with 5G active antennas.
  • a frequency selective surface unit including: a first surface composed of a plurality of first metal strips interlaced with each other; a second surface composed of a plurality of second metal strips, Wherein, a second inter-band gap is provided on each of the second metal strips, and the metal strips on both sides of the second inter-band gap are connected through metal strip lines to form a parallel resonant LC circuit in the H frequency band. ; Supporting plate, the first surface and the second surface are fixed to the same side or the front and back sides of the supporting plate.
  • a frequency selective surface is also provided, which is composed of a periodic continuation of the above frequency selective surface unit.
  • a spatial filtering method is also provided, which is implemented using the above-mentioned frequency selection surface, including: adjusting the L value or C value of the series resonant LC circuit and the parallel resonant LC circuit to control the frequency selection. Transmission and reflection bands of surface elements.
  • Figure 1 is a schematic diagram of the principle of the FSS-based A+P antenna solution according to an embodiment of the present application
  • Figure 2 is a structural block diagram of a frequency selective surface unit according to an embodiment of the present application.
  • Figure 3 is a structural block diagram of the first metal strip on the first surface according to an embodiment of the present application.
  • Figure 4 is a structural block diagram of a second metal strip on the second surface according to an embodiment of the present application.
  • Figure 5 is a flow chart of a spatial filtering method according to an embodiment of the present application.
  • Figure 6 is a flow chart of a spatial filtering method according to an embodiment of the present application.
  • Figure 7 is a schematic structural diagram of the upper surface and lower surface of the FSS unit according to the scenario embodiment of the present application.
  • Figure 8 is a side view of the three-dimensional structure of the FSS unit according to the scenario embodiment of the present application.
  • Figure 9 is a schematic structural diagram of the upper surface of the FSS according to the scenario embodiment of the present application.
  • Figure 10 is a schematic structural diagram of the lower surface of the FSS according to the scenario embodiment of the present application.
  • Figure 11 is a schematic diagram of a fourth-order series-parallel resonant circuit construction according to the scenario embodiment of this application;
  • Figure 12 is a schematic diagram of the shape of the FSS unit according to the scenario embodiment of the present application.
  • Figure 13 is a schematic structural diagram of a multi-layer FSS according to a scenario embodiment of this application.
  • Figure 14 is a schematic diagram of the distributed LC circuit structure according to the scenario embodiment of the present application.
  • Figure 15 is a schematic structural diagram of a distributed LC circuit according to a scenario embodiment of this application.
  • Figure 16 is a schematic diagram of the distributed LC circuit structure according to the scenario embodiment of the present application.
  • Figure 17 is a schematic structural diagram of a distributed LC circuit according to a scenario embodiment of the present application.
  • Figure 18 is a schematic structural diagram of a distributed LC circuit according to a scenario embodiment of this application.
  • Figure 19 is a schematic structural diagram of the FSS unit according to the scenario embodiment of the present application.
  • Figure 20 is a schematic structural diagram of the FSS unit according to the scenario embodiment of the present application.
  • Figure 21 is a schematic structural diagram of the FSS unit according to the scenario embodiment of the present application.
  • Figure 22 is a schematic structural diagram of an FSS unit according to a scenario embodiment of this application.
  • the A+P antenna is a multi-frequency co-aperture antenna that uses an integrated interleaving solution to embed the 5G active antenna into the 4G passive antenna from the back to achieve integrated deployment.
  • A+P antenna performance can be aligned with the existing network, supporting separate maintenance and independent deployment of active antennas and passive antennas, which can greatly reduce operating costs and meet the requirements for smooth equipment upgrades.
  • Frequency Selective Surface is a periodic artificial electromagnetic material that can regulate electromagnetic waves of specific frequencies or polarizations. Using the filtering function of FSS for space electromagnetic waves, it is possible to realize the reflection of low-frequency signals (690-960MHz, L-band) and the transmission of high-frequency signals (2490-2690MHz or 3400-3800MHz, H-band). FSS technology can meet the development needs of A+P products and achieve the perfect integration of passive and active antennas.
  • Figure 1 is a schematic diagram of the principle of the A+P antenna solution based on FSS. As shown in Figure 1, from top to bottom, they are the passive antenna working in the L-band, FSS and the active antenna working in the H-band. FSS has low-resistance and high-pass characteristics for space electromagnetic waves, and can be used as a reflector for passive antennas and a radome for active antennas. At the same time, the FSS spatial filtering function can reduce the inter-frequency coupling between L- and H-band antennas and improve antenna performance. Finally, the FSS-based A+P antenna can ensure the independence of 4G passive antennas and 5G active antennas, that is, it supports independent design, independent deployment, and independent maintenance of active and passive antennas.
  • FIG. 2 is a structural block diagram of a frequency selective surface unit according to an embodiment of the present application.
  • the frequency selective surface unit 20 includes: a first surface 210, It is composed of a plurality of first metal strips interlaced with each other; the second surface 220 is composed of a plurality of second metal strips, wherein each second metal strip is provided with a second inter-band gap. The second metal strips on both sides of the gap are connected by metal strip lines to The H-band constitutes a parallel resonant LC circuit; the support plate 230, wherein the first surface 210 and the second surface 220 can be fixed on the same side or the front and back sides of the support plate 230.
  • the first surface is composed of a plurality of first metal strips interlaced with each other;
  • the second surface is composed of a plurality of second metal strips, wherein each second metal strip A second inter-band gap is provided on the strip.
  • the metal strips on both sides of the second inter-band gap are connected through metal strip lines to form a parallel resonant LC circuit in the H frequency band.
  • the first surface and the second surface are fixed to the support. The same side or the front and back of the board, thereby solving the problem in related technologies that the 4G passive antenna cannot be perfectly integrated with the 5G active antenna.
  • first inter-band gaps are distributed at both ends of each first metal strip, and in the case where the first surface and the second surface are fixed to the front and back sides of the support plate, the second inter-band gaps It is located in a preset area above or below the first inter-band gap to form a series resonant LC circuit in the L frequency band.
  • the first inter-band gaps may be symmetrically distributed at both ends of the first metal strip, and the second inter-band gaps may be located directly below the first inter-band gaps, where the second inter-band gaps are connected to the first inter-band gaps.
  • the second surface can be located directly below the first surface, or directly above the first surface.
  • the second surface It can also be on the same layer as the first surface, distributed on the left, right, or both sides of the first surface, etc. Among them, the above-mentioned solution of the second surface and the first surface being on the same layer is only a change in the positional relationship.
  • connection relationship and spatial coupling relationship involved can be the same as when the second surface is located directly below the first surface, that is, the relationship between each element
  • the series-parallel connection methods to form a parallel resonant LC circuit and a series resonant LC circuit are the same and will not be described here.
  • FIG. 3 is a structural block diagram of a first metal strip on the first surface according to an embodiment of the present application.
  • the first metal strip 30 further includes: a first central metal strip The strip 310 and the two first side-end metal strips 320, wherein the first central metal strip 310 is located in the middle of the first metal strip 30, and the two first side-end metal strips 320 are respectively distributed on the first metal strip 310 and the two first side-end metal strips 320.
  • a first inter-band gap is formed between both ends of the strip 30 and the first central metal strip 310 .
  • FIG. 4 is a structural block diagram of a second metal strip on the second surface according to an embodiment of the present application.
  • the second metal strip 40 further includes: two second Side-end metal strips 410, wherein two second side-end metal strips 410 are distributed on both sides of the second inter-strip gap and connected by metal strip lines 420.
  • the second inter-band gap is located in a preset area above or below the first inter-band gap to form a series resonant LC circuit in the L frequency band, including: a first central metal strip 310, two The first side-end metal strips 320, the two second side-end metal strips 410 and the metal strip lines 420 are connected in series to form a series resonance LC circuit in the L frequency band.
  • the first metal strip 30 and/or the second metal strip 40 are at least one of the following: elongated metal strip lines; bent metal strip lines; metal coils; metal vias.
  • the elongated metal strip line refers to a metal strip line with a length greater than or equal to 5 times the width.
  • first metal strip 30 and the second metal strip 40 are connected in one of the following ways: coplanar coupling line connection; non-coplanar coupling line connection; interwoven line connection.
  • the support plate is one of the following: dielectric substrate; ceramic; sheet metal strip line; metal body.
  • a frequency selective surface is provided, which is composed of a periodic continuation of the above frequency selective surface unit.
  • the frequency selective surface is one of the following: a single layer periodic continuation frequency selective surface unit; The frequency-selective surface unit of double-layer periodic extension; the frequency-selective surface unit of multi-layer periodic extension.
  • FIG. 5 is a flow chart of the spatial filtering method according to an embodiment of the present application. As shown in Figure 5, the process includes Following steps:
  • Step S502 adjust the L value or C value of the series resonant LC circuit and the parallel resonant LC circuit to control the transmission frequency band and reflection frequency band of the frequency selective surface unit.
  • Figure 6 is a flow chart of a spatial filtering method according to an embodiment of the present application. As shown in Figure 6, the process includes the following steps:
  • Step S602 adjust the L value or C value of the series resonant LC circuit and the parallel resonant LC circuit to control the transmission frequency band and reflection frequency band of the frequency selective surface unit;
  • Step S604 adjust the number of series resonant LC circuits and parallel resonant LC circuits to control the transmission bandwidth and reflection bandwidth of the frequency selective surface unit.
  • the upper surface is the above-mentioned first surface
  • the lower surface is the above-mentioned second surface
  • This scenario embodiment provides a low-resistance and high-pass FSS.
  • Figure 7 is a schematic structural diagram of the upper surface and lower surface of the FSS unit according to the scenario embodiment of the present application.
  • the FSS unit includes an upper surface 1, a dielectric substrate 2 and a lower surface 3.
  • the dielectric substrate 2 supports the upper surface 1 and the lower surface 3.
  • the upper surface 1 is composed of two first metal strips 11 that are orthogonal to each other. From the center to the outside, the first metal strips 11 include a first center metal strip 111 and a first side end metal strip 112 in sequence.
  • the lower surface 3 is formed by rotating four second metal strips 31 , and the second metal strips 31 include second side end metal strips 311 , 313 and a second central metal strip 312 .
  • the second metal strip 31 is located directly below the gap between the first center metal strip 111 and the first side metal strip 112 , that is, as shown in FIG. 7 , the gap between the second side metal strips 311 and 313 , aligned with the gap between the first central metal strip 111 and the first side end metal strip 112 .
  • Figure 8 is a side view of the three-dimensional structure of the FSS unit according to the scenario embodiment of the present application.
  • the second metal strip 31 is located directly below the gap between the first center metal strip 111 and the first side end metal strip 112 to achieve the following
  • the surface is positioned directly below the upper surface, but the upper surface and the lower surface are not limited to this positional relationship.
  • the width of the second central metal strip 312 is much smaller than the length, which can be equivalent to the inductance.
  • the far smaller range can be that the length of the metal strip is greater than or equal to 5 times the width; the second side end metal strip
  • the coupling connection between strips 311 and 313 can be equivalent to a capacitor.
  • the second central metal strip 312 and the second side metal strips 311 and 313 are in a parallel state, and can form a parallel resonant LC circuit in the H frequency band.
  • the second side metal strips 311 and 313 are coupled with the first center metal strip 111 and the first side metal strip 112 respectively, and can be equivalent to a capacitor; the first center metal strip 111 and the first side metal strip The strip 112 and the second central metal strip 312 can be equivalent to an inductor.
  • the first center metal strip 111, the first side end metal strip 112, the second side end metal strips 311, 313 and the second center metal strip 312 are connected in series, and can form a series resonance LC circuit in the L frequency band.
  • Figure 9 is a schematic structural diagram of the upper surface of the FSS according to the scenario embodiment of the present application.
  • Figure 10 is a schematic structural diagram of the lower surface of the FSS according to the scenario embodiment of the present application. As shown in Figures 9 and 10, the FSS is represented by Figure 7 The FSS unit cycle delay shown is Extension composition.
  • the parallel resonant LC circuit In the H-frequency band, the parallel resonant LC circuit is open-circuited to generate a reflection zero point to achieve electromagnetic wave transmission; in the L-frequency band, the series LC circuit is short-circuited to generate a transmission zero point to achieve electromagnetic wave reflection.
  • Figure 11 is a schematic diagram of a fourth-order series-parallel resonant circuit construction according to the scenario embodiment of the present application. As shown in Figure 11, by increasing the number of metal strips 11, a first-order, two-order or multi-order series-parallel resonant circuit can be constructed.
  • Figure 12 is a schematic diagram of the shape of the FSS unit according to the scenario embodiment of the present application. As shown in Figure 12, it is a rectangular FSS unit. Among them, those skilled in the art should know that the shape of the FSS unit provided by the embodiment of the present application can be a square, a rectangle, a triangle, or a polygon, and there is no limitation here.
  • FIG 13 is a schematic diagram of a multi-layer FSS structure according to a scenario embodiment of the present application.
  • the FSS can be a single-layer structure, a two-layer structure, or a multi-layer structure.
  • the FSS proposed in the embodiment of this application realizes spatial filtering with low resistance and high pass characteristics by designing an L-band series LC circuit and an H-band parallel LC circuit.
  • the series/parallel LC circuit and equivalent capacitance and inductance components are not limited to the forms described in the scenario embodiment 1.
  • the inductor can be designed as a long and thin straight line, a bent line, a coil, a metal via, etc.
  • the capacitor can be designed as a coplanar Coupled lines, non-coplanar coupled lines, intertwined lines, etc.
  • series-parallel LC circuits are given below, but these are only examples and are not specifically restricted.
  • Figure 14 is a schematic structural diagram of a distributed LC circuit according to a scenario embodiment of the present application. As shown in Figure 14, it includes upper and lower metal strip lines. The coupling area of the upper metal strip line and the lower metal strip line is equivalent to a capacitor. The upper metal strip line The wire is equivalent to an inductor. This structure can be regarded as a series LC circuit, which can provide an L-band transmission zero point.
  • Figure 15 is a schematic diagram of the distributed LC circuit structure according to the scenario embodiment of the present application. As shown in Figure 15, it includes a single layer of metal strip lines. The thin bent line in the middle is equivalent to an inductor, and the wide lines on both sides are equivalent to a capacitor (required Note that the capacitance can be very small, and the corresponding line width is very thin); this structure can be regarded as a parallel LC circuit, which can provide an H-band reflection zero point.
  • Figure 16 is a schematic diagram of the distributed LC circuit structure according to the scenario embodiment of the present application. As shown in Figure 16, it includes two layers of metal strip lines, the upper and lower layers.
  • the bent thin line in the middle of the lower metal strip line is equivalent to an inductor, and the metal on both sides of the thin slit is
  • the strip line is equivalent to a capacitor, and the two form a parallel LC circuit; the coupling area between the upper metal strip line and the lower metal strip line is equivalent to a capacitor, and the upper metal strip line is equivalent to an inductance.
  • This structure can be regarded as a parallel LC circuit and a series LC circuit, which can provide an L-band transmission zero point and an H-band reflection zero point.
  • Figure 17 is a schematic diagram of the distributed LC circuit structure according to the scenario embodiment of the present application. As shown in Figure 17, it includes upper and lower layers of metal strip lines. The thin lines bent on the sides of the lower metal strip lines are equivalent to inductors and wide slits on both sides.
  • the metal strip line is equivalent to a capacitor, and the two form a parallel LC circuit; the coupling area of the upper metal strip line and the lower metal strip line is equivalent to a capacitor, and the upper metal strip line is equivalent to an inductance.
  • This structure can be regarded as a parallel LC circuit and a series LC circuit, which can provide an L-band transmission zero point and an H-band reflection zero point.
  • Figure 18 is a schematic diagram of the distributed LC circuit structure according to the scenario embodiment of the present application. As shown in Figure 18, it includes a single layer of metal strip lines, 1/4 wavelength open-circuit stubs on both sides each constitute an equivalent inductance, and two stubs The coupling between the line and the middle metal strip line forms an equivalent capacitance.
  • This structure can be regarded as a parallel LC circuit, which can provide an H-band reflection zero point.
  • the distributed LC circuit structure provided above can be used to replace the overlapping portion of the projection of the metal lines or metal strips on the upper and lower surfaces of the FSS unit in the direction perpendicular to the dielectric substrate.
  • This scenario embodiment provides a spatial filtering method.
  • Both parallel LC resonant circuit and series LC resonant circuit can pass By adjusting the L value or C value, the resonant frequency is changed to control the transmission frequency band and reflection frequency band; construct N series resonant circuits and M parallel resonant circuits (N and M are greater than or equal to 1). Increasing the value of N or M can increase the value respectively. Transmission bandwidth and reflection bandwidth.
  • FIG 19 is a schematic structural diagram of the FSS unit according to the scenario embodiment of the present application. As shown in Figure 19, each of the two orthogonal metal strips of the FSS unit has 4 parallel LC circuits and 2 series LC circuits. It can provide 4 H-band reflection zero points and 2 L-band transmission zero points.
  • FIG 20 is a schematic structural diagram of the FSS unit according to the scenario embodiment of the present application.
  • each of the two orthogonal metal strips of the FSS unit has 4 parallel LC circuits and 2 series LC circuits. It can provide 4 H-band reflection zero points and 2 L-band transmission zero points.
  • the parallel LC circuit is composed of a bent inductor line and thin wires at both ends. Since the thin wires at both ends are thinner and have smaller capacitance, although it is similar to a pure inductance, it is still a parallel LC circuit in a strict sense.
  • Figure 21 is a schematic structural diagram of the FSS unit according to the scenario embodiment of the present application
  • Figure 22 is a schematic structural diagram of the FSS unit according to the scenario embodiment of the present application.
  • a distributed LC circuit with series resonance characteristics in the L frequency band and parallel resonance characteristics in the H frequency band is constructed to create transmission zero points and reflection zero points in the L frequency band and H frequency band, respectively.
  • the functions of L-band electromagnetic wave reflection and H-band electromagnetic wave transmission are not only can the low-resistance and high-pass filtering function of space electromagnetic waves be obtained, but also the electromagnetic scattering in the H-band can be suppressed, ensuring that antennas working in the H-band obtain excellent radiation pattern conformal effects.
  • the FSS proposed in the embodiments of this application has the following characteristics: 1) It can be implemented on different carrier materials such as dielectric substrates, ceramics, sheet metal strips, metal bodies, etc.; 2) It can be a planar structure or a three-dimensional structure; 3) It can be Single-layer structure or multi-layer structure; 4) The unit shape can be square, rectangular, triangle or polygon; 5) Multiple series or parallel resonant circuits can be constructed to obtain one or more transmission zero points or reflection zero points, thereby expanding the stop band and Passband bandwidth; 6) Only a parallel resonant circuit can be constructed to obtain the best reflection zero point; 7) Dual polarization, single polarization, and circular polarization electromagnetic waves can be supported
  • the FSS designed in the embodiment of this application can achieve reflection of greater than 35% of the relative bandwidth in the L frequency band, and the reflection coefficient is greater than -0.2dB. At the same time, it can achieve transmission of greater than 45% of the relative bandwidth in the H frequency band, and the transmission coefficient is greater than -0.3dB. .
  • the frequency ratio between L band and H band can reach a minimum of 1.5:1 and a maximum of 5:1. In the joint simulation with the L-band passive antenna and the H-band active antenna, the gain of the L-band passive antenna was only reduced by 0.2dB, and the average gain of the H-band active antenna was not reduced.
  • the FSS proposed in the embodiment of this application is suitable for active and passive converged base stations and antenna products of various specifications and models, and can be specifically used in the following scenarios: 1. Unable to add new sites; 2. Unable to add 5G due to factors such as limited wind load Antenna sites; 3. Affected by early 4G antennas, 5G active antennas have low height or have line-of-sight blocking sites.
  • the embodiment of this application proposes FSS, which constructs a low-frequency series LC circuit and a high-frequency parallel LC circuit in a metal strip to obtain the transmission zero point and the reflection zero point respectively, thereby achieving the low-resistance and high-pass filtering effect of space electromagnetic waves; at the same time, based on this FSS design Method, various FSS unit embodiments are given.
  • the best embodiment adopts a double-layer structure, which has extremely low transmission/reflection loss and good spatial dispersion characteristics. At the same time, it can effectively suppress the secondary radiation of the induced current in the transmission frequency band and ensure the radiation characteristics of the sky surface.
  • This frequency selective surface has the function of reflecting low-frequency electromagnetic waves and transmitting high-frequency electromagnetic waves. It can realize the common aperture of multi-frequency antennas while suppressing inter-frequency coupling, and ensure the independent deployment and separate maintenance of multi-frequency antennas.

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Abstract

本申请实施例提供了一种频率选择表面与空间滤波方法，通过频率选择表面单元，包括：第一表面，由多条彼此交错的第一金属条带构成；第二表面，由多条第二金属条带构成，其中，每条所述第二金属条带上设置有第二带间缝隙，所述第二带间缝隙两侧的金属条带之间通过金属带线连接，以在H频段构成并联谐振LC电路，支撑板，第一表面和第二表面固定于支撑板的同一面或正反面。

Description

频率选择表面与空间滤波方法
相关申请的交叉引用
本申请基于2022年8月24日提交的发明名称为“频率选择表面与空间滤波方法”的中国专利申请CN202211021650.5，并且要求该专利申请的优先权，通过引用将其所公开的内容全部并入本申请。
技术领域
本申请实施例涉及通信领域，具体而言，涉及一种频率选择表面与空间滤波方法。
背景技术
5G有源天面部署面临三大难题：1、无法新增站点；2、现有站点部署4G无源天面无法额外部署5G有源天面；3、现有站点可以额外部署5G有源天面，但挂高受限无法获得最佳信号覆盖。为此，提出了将4G无源天面和5G有源天面融合方案——A+P(Activeplus Passive，A+P)天线。A+P天线是一种多频共口径天线，采用一体交织方案将5G有源天面从背部嵌入4G无源天面，实现一体化部署。A+P天线性能可以与现网对齐，支持有源天面和无源天面的分离维护和独立部署，可以极大地降低运营成本、满足设备平滑升级的要求。
为了满足A+P天线性能，需要设计一种频率选择表面(Frequency Selecitve Surface，FSS)，以实现无源和有源天面的完美融合。
发明内容
本申请实施例提供了一种频率选择表面与空间滤波方法，以至少解决相关技术中4G无源天面无法与5G有源天面完美融合的问题。
根据本申请的一个实施例，提供了一种频率选择表面单元，包括：第一表面，由多条彼此交错的第一金属条带构成；第二表面，由多条第二金属条带构成，其中，每条所述第二金属条带上设置有第二带间缝隙，所述第二带间缝隙两侧的金属条带之间通过金属带线连接，以在H频段构成并联谐振LC电路；支撑板，所述第一表面和第二表面固定于所述支撑板的同一面或正反面。
根据本申请的又一实施例，还提供了一种频率选择表面，由上述频率选择表面单元周期延拓构成。
根据本申请的又一实施例，还提供了一种空间滤波方法，采用上述频率选择表面实现，包括：调整串联谐振LC电路和并联谐振LC电路的L值或C值，以控制所述频率选择表面单元的透射频段和反射频段。
附图说明
图1是根据本申请实施例的基于FSS的A+P天线方案原理示意图；
图2是根据本申请实施例的频率选择表面单元的结构框图；
图3是根据本申请实施例的第一表面的第一金属条带的结构框图；
图4是根据本申请实施例的第二表面的第二金属条带的结构框图；
图5是根据本申请实施例的空间滤波方法的流程图；
图6是根据本申请实施例的空间滤波方法的流程图；
图7是根据本申请场景实施例的FSS单元的上表面和下表面的结构示意图；
图8根据本申请场景实施例的FSS单元的立体结构侧视图；
图9是根据本申请场景实施例的FSS的上表面的结构示意图；
图10是根据本申请场景实施例的FSS的下表面的结构示意图；
图11是根据本申请场景实施例的四阶串并联谐振电路构建原理图；
图12是根据本申请场景实施例的FSS单元形状示意图；
图13是根据本申请场景实施例的多层FSS结构示意图；
图14是根据本申请场景实施例的分布式LC电路结构示意；
图15是根据本申请场景实施例的分布式LC电路结构示意图；
图16是根据本申请场景实施例的分布式LC电路结构示意；
图17是根据本申请场景实施例的分布式LC电路结构示意图；
图18是根据本申请场景实施例的分布式LC电路结构示意图；
图19是根据本申请场景实施例的FSS单元结构示意图；
图20是根据本申请场景实施例的FSS单元结构示意图；
图21是根据本申请场景实施例的FSS单元结构示意图；
图22是根据本申请场景实施例的FSS单元结构示意图。
具体实施方式
下文中将参考附图并结合实施例来详细说明本申请的实施例。
需要说明的是，本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。
A+P天线是一种多频共口径天线，采用一体交织方案将5G有源天面从背部嵌入4G无源天面，实现一体化部署。A+P天线性能可以与现网对齐，支持有源天面和无源天面的分离维护和独立部署，可以极大地降低运营成本、满足设备平滑升级的要求。
频率选择表面(Frequency Selecitve Surface，FSS)是一种周期人工电磁材料，可以对特定频率或极化的电磁波进行调控。利用FSS对空间电磁波的滤波功能，可以实现低频信号(690-960MHz，L频段)的反射和高频信号(2490-2690MHz或3400-3800MHz，H频段)的透射。FSS技术可以满足A+P产品的开发需要，实现无源和有源天面的完美融合。
图1是基于FSS的A+P天线方案原理示意图，如图1所示，从上到下，分别为工作于L频段的无源天面、FSS和工作于H频段的有源天面。FSS对空间电磁波具有低阻高通特性，可以作为无源天面的反射板和有源天面的天线罩。同时，FSS空间滤波功能可以降低L和H频段天线间的异频耦合，提高天线性能。最后，基于FSS的A+P天线可以保证4G无源天面和5G有源天面的独立性，即支持有源和无源天面的独立设计、独立部署、独立维护。
在本实施例中提供了一种频率选择表面单元，图2是根据本申请实施例的频率选择表面单元的结构框图，如图2所示，该频率选择表面单元20包括：第一表面210，由多条彼此交错的第一金属条带构成；第二表面220，由多条第二金属条带构成，其中，每条第二金属条带上设置有第二带间缝隙，第二带间缝隙两侧的第二金属条带之间通过金属带线连接，以在 H频段构成并联谐振LC电路；支撑板230，其中，第一表面210和第二表面220可以固定于支撑板230的同一面或者正反面。
在本申请上述实施例提供的频率选择表面单元中，第一表面由多条彼此交错的第一金属条带构成；第二表面由多条第二金属条带构成，其中，每条第二金属条带上设置有第二带间缝隙，第二带间缝隙两侧的金属条带之间通过金属带线连接，以在H频段构成并联谐振LC电路，第一表面和第二表面固定于支撑板的同一面或正反面，从而解决了相关技术中4G无源天面无法与5G有源天面完美融合的问题。
在一个示例性实施例中，每条第一金属条带的两端分布有第一带间缝隙，在第一表面和第二表面固定于支撑板的正反面的情况下，第二带间缝隙位于第一带间缝隙的上方或下方的预设区域内，以在L频段构成串联谐振LC电路。
在本申请实施例中，第一带间缝隙可以对称分布于第一金属条带的两端，第二带间缝隙可以位于第一带间缝隙的正下方，其中，第二带间缝隙与第一带间缝隙的位置关系具体不做限制，即第一表面和第二表面的位置关系不做限制，第二表面可以位于第一表面正下方，也可以位于第一表面正上方，第二表面还可以与第一表面处于同层，分布于第一表面左边、右边或者左右两边等。其中，上述第二表面与第一表面处于同层的方案只是位置关系的变化，涉及具体的连接关系及空间耦合关系与第二表面位于第一表面正下方时可以是相同的，即各元件之间形成并联谐振LC电路和串联谐振LC电路的串并联的连接方式是相同的，这里不再展开描述。
在一个示例性实施例中，图3是根据本申请实施例的第一表面的第一金属条带的结构框图，如图3所示，该第一金属条带30进一步包括：第一中心金属条带310和两个第一侧端金属条带320，其中，第一中心金属条带310位于第一金属条带30的中部，两个第一侧端金属条带320分别分布于第一金属条带30的两端，且均与第一中心金属条带310之间形成有第一带间缝隙。
在一个示例性实施例中，图4是根据本申请实施例的第二表面的第二金属条带的结构框图，如图4所示，该第二金属条带40进一步包括：两个第二侧端金属条带410，其中，两个第二侧端金属条带410分布于第二带间缝隙的两侧并通过金属带线420连接。
在一个示例性实施例中，第二带间缝隙位于第一带间缝隙的上方或下方的预设区域内，以在L频段构成串联谐振LC电路，包括：第一中心金属条带310、两个第一侧端金属条带320、两个第二侧端金属条带410以及金属带线420串联连接，以在L频段构成串联谐振LC电路。
在一个示例性实施例中，第一金属条带30和/或第二金属条带40为以下至少之一：细长金属带线；弯折金属带线；金属线圈；金属过孔。其中，在本申请实施例中，细长金属带线指的是长度大于或者等于5倍宽度的金属带线。
在一个示例性实施例中，第一金属条带30和第二金属条带40的连接方式为以下之一：共面耦合线连接；不共面耦合线连接；交织线连接。
在一个示例性实施例中，支撑板为以下之一：介质基板；陶瓷；钣金带线；金属体。
根据本申请的另一个实施例，提供了一种频率选择表面，由上述的频率选择表面单元周期延拓构成。
在一个示例性实施例中，频率选择表面为以下之一：单层周期延拓的频率选择表面单元； 双层周期延拓的频率选择表面单元；多层周期延拓的频率选择表面单元。
根据本申请的又一个实施例，提供了一种空间滤波方法，采用上述的频率选择表面实现，图5是根据本申请实施例的空间滤波方法的流程图，如图5所示，该流程包括以下步骤：
步骤S502，调整串联谐振LC电路和并联谐振LC电路的L值或C值，以控制频率选择表面单元的透射频段和反射频段。
在一个示例性实施例中，图6是根据本申请实施例的空间滤波方法的流程图，如图6所示，该流程包括以下步骤：
步骤S602，调整串联谐振LC电路和并联谐振LC电路的L值或C值，以控制频率选择表面单元的透射频段和反射频段；
步骤S604，调整串联谐振LC电路和并联谐振LC电路的数量，以控制频率选择表面单元的透射带宽和反射带宽。
其中，本领域的技术人员应该知道，上述步骤之间的执行顺序是可以互换的，这里不做具体限制。
为了使得本领域的技术人员更好地理解本申请的技术方案，下面结合具体的场景实施例进行阐述。在本申请的场景实施例中，上表面即上述第一表面，下表面即上述第二表面。
场景实施例一
本场景实施例中提供了一种低阻高通的FSS。
图7是根据本申请场景实施例的FSS单元的上表面和下表面的结构示意图，如图7所示，在本场景实施例中，FSS单元包括上表面1、介质基板2以及下表面3构成，介质基板2支撑上表面1和下表面3。其中，上表面1由两条彼此正交的第一金属条带11构成，从中心到外侧，第一金属条带11依次包括第一中心金属条带111、第一侧端金属条带112。下表面3由四条第二金属条带31旋转构成，第二金属条带31包括第二侧端金属条带311、313和第二中心金属条带312。第二金属条带31位于第一中心金属条带111、第一侧端金属条带112间缝隙的正下方，即如图7所示，第二侧端金属条带311、313之间的间隙，与第一中心金属条带111和第一侧端金属条带112之间的间隙正对齐。
图8根据本申请场景实施例的FSS单元的立体结构侧视图。其中，本领域的技术人员应该知道，在本场景实施例中，第二金属条带31位于第一中心金属条带111和第一侧端金属条带112间缝隙的正下方，用于实现下表面位于上表面的正下方的位置关系，但上表面和下表面并不局限于这种位置关系。
第二中心金属条带312宽度远小于长度，可以等效为电感，例如，在本实施例中，远小于的范围可以为金属条带的长度大于或者等于5倍宽度；第二侧端金属条带311、313之间耦合连接，可以等效为电容。第二中心金属条带312与第二侧端金属条带311、313处于并联状态，可以在H频段构成并联谐振LC电路。
第二侧端金属条带311、313分别与第一中心金属条带111、第一侧端金属条带112耦合连接，可以等效为电容；第一中心金属条带111、第一侧端金属条带112、第二中心金属条带312可以等效为电感。第一中心金属条带111、第一侧端金属条带112、第二侧端金属条带311、313以及第二中心金属条带312处于串联状态，可以在L频段构成串联谐振LC电路。
图9是根据本申请场景实施例的FSS的上表面的结构示意图，图10是根据本申请场景实施例的FSS的下表面的结构示意图，如图9和图10所示，FSS由图7所示的FSS单元周期延 拓构成。
H频段，并联谐振LC电路开路产生反射零点，实现电磁波透射；L频段，串联LC电路短路产生传输零点，实现电磁波反射。
图11是根据本申请场景实施例的四阶串并联谐振电路构建原理图，如图11所示，通过增加金属条带11的数量，可以构建一阶、两阶或多阶串并联谐振电路。
图12是根据本申请场景实施例的FSS单元形状示意图，如图12所示，为长方形的FSS单元。其中，本领域的技术人员应该知道，本申请实施例提供的FSS单元的形状可以是正方形、长方形、三角形、多边形，这里不作限制。
图13是根据本申请场景实施例的多层FSS结构示意图，如图13所示，FSS可以是单层结构、两层结构以及多层结构。
场景实施例二
本申请实施例所提出FSS通过设计L频段串联LC电路和H频段并联LC电路实现低阻高通特性的空间滤波。其中，串/并联LC电路和等效电容电感元件不局限于场景实施例一中所述形态，例如电感可以设计为细长直线、弯折线、线圈、金属过孔等；电容可以设计为共面耦合线、不共面耦合线、交织线等。下面给出了几种串并联LC电路的结构实例，但是这里仅限举例描述，并不做具体限制使用。
图14是根据本申请场景实施例的分布式LC电路结构示意图，如图14所示，包括上下两层金属带线，上层金属带线和下层金属带线耦合区域等效为电容，上层金属带线等效为电感。该结构可视为一个串联LC电路，可以提供一个L频段传输零点。
图15是根据本申请场景实施例的分布式LC电路结构示意图，如图15所示，包括单层金属带线，中间弯折细线等效为电感，两侧宽线等效为电容(需要注意的是电容可以很小，对应线宽很细)；该结构可视为一个并联LC电路，可以提供一个H频段反射零点。
图16是根据本申请场景实施例的分布式LC电路结构示意图，如图16所示，包括上下两层金属带线，下层金属带线中间弯折细线等效为电感、细缝两侧金属带线等效为电容，两者构成并联LC电路；上层金属带线和下层金属带线耦合区域等效为电容，上层金属带线等效为电感。该结构可视为一个并联LC电路和一个串联LC电路，可以提供一个L频段传输零点和一个H频段反射零点。
图17是根据本申请场景实施例的分布式LC电路结构示意图，如图17所示，包括上下两层金属带线，下层金属带线侧边弯折细线等效为电感、宽缝两侧金属带线等效为电容，两者构成并联LC电路；上层金属带线和下层金属带线耦合区域等效为电容，上层金属带线等效为电感。该结构可视为一个并联LC电路和一个串联LC电路，可以提供一个L频段传输零点和一个H频段反射零点。
图18是根据本申请场景实施例的分布式LC电路结构示意图，如图18所示，包括单层金属带线，两侧1/4波长开路短截线各自构成等效电感、两个短截线与中间金属带线耦合构成等效电容。该结构可视为一个并联LC电路，可以提供一个H频段反射零点。
其中，本领域的技术人员应该知道，上述提供的分布式LC电路结构，可以用于替换FSS单元中上下表面的金属线或者金属条带在垂直于介质基板的方向的投影的重叠部分。
场景实施例三
本场景实施例提供了一种空间滤波方法。并联LC谐振电路和串联LC谐振电路均可以通 过调整L值或C值，改变谐振频率，从而控制透射频段和反射频段；构建N个串联谐振电路和M个并联谐振电路(N、M大于等于1)，增加N或M的值可以分别增加透射带宽和反射带宽。
图19是根据本申请场景实施例的FSS单元结构示意图，如图19所示，FSS单元的两条正交金属条带中每一个条带均有4个并联LC电路和2个串联LC电路，可以提供4个H频段的反射零点和2个L频段的传输零点。
场景实施例四
图20是根据本申请场景实施例的FSS单元结构示意图，如图20所示，FSS单元的两条正交金属条带中每一个条带均有4个并联LC电路和2个串联LC电路，可以提供4个H频段的反射零点和2个L频段的传输零点。其中，并联LC电路由弯折电感线和两端细线构成，由于两端细线宽度较细容值较小，虽然近似于纯电感但严格意义上仍属于并联LC电路。
图21是根据本申请场景实施例的FSS单元结构示意图，图22是根据本申请场景实施例的FSS单元结构示意图。
根据上述场景实施例提供的FSS单元的结构示意图，本领域的技术人员应该知道，本申请实施例提供的FSS具有多种实现结构形式。
本申请实施例在周期性金属条带上，通过构建在L频段具有串联谐振特性和在H频段具有并联谐振特性的分布式LC电路，分别在L频段和H频段创建传输零点和反射零点，实现L频段电磁波反射和H频段电磁波透射的功能。利用该方法，不仅可以获得空间电磁波低阻高通的滤波功能，还可以抑制H频段的电磁散射，确保工作于H频段的天线获得优异的辐射方向图保形效果。
综上，本申请实施例提出的FSS具有以下特点：1)可以实施于介质基板、陶瓷、钣金带线、金属体等不同载体材料；2)可以是平面结构抑或立体结构；3)可以是单层结构抑或多层结构；4)单元形状可以是正方形、矩形、三角形抑或多边形；5)可以构建多个串联或并联谐振电路，获得一个或多个传输零点或反射零点，从而拓展阻带和通带带宽；6)可以仅构建并联谐振电路，获得最佳反射零点；7)可以支持双极化、单极化、圆极化电磁波
本申请实施例设计的FSS，可以在L频段实现大于35％相对带宽的反射，且反射系数大于-0.2dB，同时可以在H频段实现大于45％相对带宽的透射，且透射系数大于-0.3dB。L频段与H频段的频比最小可以达到1.5∶1，最大可以达到5∶1。与L频段无源天线和H频段有源天线联合仿真中，L频段无源天面增益仅降低0.2dB，H频段有源天线平均增益无降低。
本申请实施例提出的FSS适用于多种规格、型号的有源无源融合类基站及天线产品，具体可用于以下场景：1、无法新增站点；2、受限风载等因素无法增加5G天面站点；3、受早期4G天面影响，5G有源天面挂高较低或存在视距遮挡站点。
本申请实施例提出FSS，通过在金属条带中构建低频串联LC电路和高频并联LC电路，从而分别获得传输零点和反射零点，实现空间电磁波的低阻高通滤波效果；同时，基于该FSS设计方法，给出了多种FSS单元实施例。其中，最佳实施例采用双层结构，具有极低的透射/反射损耗和较好的空间色散特性，同时可以有效抑制透波频段的感应电流二次辐射，确保天面空口辐射特性。该频率选择表面具有反射低频电磁波，透射高频电磁波的功能，可以实现多频天线共口径的同时抑制异频耦合，并确保多频天线的独立部署和分离维护。
以上所述仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的原则之内，所作的任何修改、等同替换、 改进等，均应包含在本申请的保护范围之内。

Claims (12)

  1. 一种频率选择表面单元，包括：
    第一表面，由多条彼此交错的第一金属条带构成；
    第二表面，由多条第二金属条带构成，其中，每条所述第二金属条带上设置有第二带间缝隙，所述第二带间缝隙两侧的金属条带之间通过金属带线连接，以在H频段构成并联谐振LC电路；
    支撑板，所述第一表面和第二表面固定于所述支撑板的同一面或正反面。
  2. 根据权利要求1所述的频率选择表面单元，其中，每条所述第一金属条带的两端分布有第一带间缝隙，在所述第一表面和第二表面固定于所述支撑板的正反面的情况下，所述第二带间缝隙位于所述第一带间缝隙的上方或下方的预设区域内，以在L频段构成串联谐振LC电路。
  3. 根据权利要求1所述的频率选择表面单元，其中，所述第一金属条带包括：第一中心金属条带和两个第一侧端金属条带，其中，所述第一中心金属条带位于所述第一金属条带的中部，两个所述第一侧端金属条带分别分布于所述第一金属条带的两端，且均与所述第一中心金属条带之间形成有第一带间缝隙。
  4. 根据权利要求1所述的频率选择表面单元，其中，所述第二金属条带包括：
    两个第二侧端金属条带，其中，两个第二侧端金属条带分布于所述第二带间缝隙的两侧并通过所述金属带线连接。
  5. 根据权利要求2所述的频率选择表面单元，其中，所述第二带间缝隙位于所述第一带间缝隙的上方或下方的预设区域内，以在L频段构成串联谐振LC电路，包括：
    第一中心金属条带、两个第一侧端金属条带、两个第二侧端金属条带以及所述金属带线串联连接，以在L频段构成串联谐振LC电路。
  6. 根据权利要求1所述的频率选择表面单元，其中，所述第一金属条带和/或所述第二金属条带为以下至少之一：
    细长金属带线；
    弯折金属带线；
    金属线圈；
    金属过孔。
  7. 根据权利要求1所述的频率选择表面单元，其中，所述第一金属条带和所述第二金属条带的连接方式为以下之一：
    共面耦合线连接；
    不共面耦合线连接；
    交织线连接。
  8. 根据权利要求1所述的频率选择表面单元，其中，所述支撑板为以下之一：
    介质基板；
    陶瓷；
    钣金带线；
    金属体。
  9. 一种频率选择表面，由权利要求1-8任一所述的频率选择表面单元周期延拓构成。
  10. 根据权利要求9所述的频率选择表面，其中，所述频率选择表面包括以下之一：
    单层周期延拓的所述频率选择表面单元；
    双层周期延拓的所述频率选择表面单元；
    多层周期延拓的所述频率选择表面单元。
  11. 一种空间滤波方法，采用权利要求10所述的频率选择表面实现，包括：
    调整串联谐振LC电路和并联谐振LC电路的L值或C值，以控制所述频率选择表面单元的透射频段和反射频段。
  12. 根据权利要求11所述的方法，其中，还包括：
    调整所述串联谐振LC电路和所述并联谐振LC电路的数量，以控制所述频率选择表面单元的透射带宽和反射带宽。
PCT/CN2023/108731 2022-08-24 2023-07-21 频率选择表面与空间滤波方法 WO2024041280A1 (zh)

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US20030142036A1 (en) * 2001-02-08 2003-07-31 Wilhelm Michael John Multiband or broadband frequency selective surface
CN103490175A (zh) * 2013-09-23 2014-01-01 摩比天线技术（深圳）有限公司 一种一体化基站天线
CN110416735A (zh) * 2018-07-16 2019-11-05 西安电子科技大学 具有传输零点的柔性多层频率选择表面
CN111786122A (zh) * 2020-07-26 2020-10-16 中国人民解放军国防科技大学 一种具有高透过率的可重构吸波与透波一体化fss
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US20030142036A1 (en) * 2001-02-08 2003-07-31 Wilhelm Michael John Multiband or broadband frequency selective surface
US20030071763A1 (en) * 2001-08-06 2003-04-17 Mckinzie William E. Low frequency enhanced frequency selective surface technology and application
CN103490175A (zh) * 2013-09-23 2014-01-01 摩比天线技术（深圳）有限公司 一种一体化基站天线
CN110416735A (zh) * 2018-07-16 2019-11-05 西安电子科技大学 具有传输零点的柔性多层频率选择表面
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