WO2024028965A1 - 発光素子、表示装置、および発光素子の製造方法 - Google Patents

発光素子、表示装置、および発光素子の製造方法 Download PDF

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WO2024028965A1
WO2024028965A1 PCT/JP2022/029583 JP2022029583W WO2024028965A1 WO 2024028965 A1 WO2024028965 A1 WO 2024028965A1 JP 2022029583 W JP2022029583 W JP 2022029583W WO 2024028965 A1 WO2024028965 A1 WO 2024028965A1
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light emitting
fluorine
functional layer
emitting device
layer
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French (fr)
Japanese (ja)
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弘文 吉川
康 浅岡
裕真 矢口
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Sharp Display Technology Corp
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Sharp Display Technology Corp
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Priority to US18/880,624 priority patent/US20260006981A1/en
Priority to JP2024538558A priority patent/JP7717983B2/ja
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers

Definitions

  • the present disclosure relates to light emitting devices and the like.
  • Patent Document 1 discloses a quantum dot composition that includes quantum dots whose surfaces are modified with a fluorine-containing ligand and a fluororesin.
  • a problem with light emitting devices using conventional quantum dot compositions is that they have low luminous efficiency.
  • a light-emitting element includes a first electrode and a second electrode, a light-emitting layer that is located between the first electrode and the second electrode, has quantum dots, and contains fluorine; a first functional layer located between the first electrode and the light emitting layer; a second functional layer located between the second electrode and the light emitting layer; and a space between the first functional layer and the second functional layer. a fluorine-containing film located at.
  • a method for manufacturing a light emitting element includes the steps of forming a first functional layer, forming a fluorine-containing film on the first functional layer, and including a fluorine-containing compound and quantum dots. applying a solution onto the fluorine-containing film.
  • the light emitting efficiency of a light emitting element can be increased.
  • FIG. 1 is a schematic diagram showing the configuration of a light emitting element according to Embodiment 1.
  • FIG. 2 is a cross-sectional view showing a configuration example of a light emitting element.
  • 1 is a cross-sectional view showing a configuration example of a display device including a light emitting element according to Embodiment 1.
  • FIG. 3 is a flowchart illustrating an example of a method for manufacturing a light emitting device according to Embodiment 1.
  • FIG. FIG. 3 is a cross-sectional view showing the configuration and career path of a comparative example.
  • 1 is a cross-sectional view showing a carrier path of a light emitting element according to Embodiment 1.
  • FIG. 3 is a cross-sectional view of a light emitting element according to Embodiment 2.
  • FIG. 7 is a cross-sectional view of a light emitting element according to a modification of Embodiment 2.
  • FIG. 7 is a flowchart illustrating an example of a method for manufacturing a light emitting device according to Embodiment 3.
  • 7 is a cross-sectional view illustrating an example of a method for manufacturing a light emitting device according to Embodiment 3.
  • FIG. 1 is a schematic diagram showing the configuration of a light emitting element according to Embodiment 1.
  • FIG. 2 is a cross-sectional view showing a configuration example of a light emitting element. As shown in FIGS. 1 and 2, the light emitting element 1 is located between a first electrode 11 and a second electrode 15, and has quantum dots 2.
  • a light-emitting layer 13 containing fluorine (F) a first functional layer 12 located between the first electrode 11 and the light-emitting layer 13, and a second functional layer located between the second electrode 15 and the light-emitting layer 13.
  • layer 14 and a fluorine-containing film 3 located between the first functional layer 12 and the second functional layer 14.
  • the functional layer may have carrier (electron or hole) transport properties, and the functional layer may be HIL (hole injection layer), HTL (hole transport layer), ETL (electron transport layer), or EIL (electron transport layer). injection layer).
  • the first electrode 11 may be an anode
  • the first functional layer 12 may be a hole transport layer
  • the second functional layer 14 may be an electron transport layer
  • the second electrode 15 may be a cathode.
  • the first electrode 11 may be a cathode
  • the first functional layer 12 may be an electron transport layer
  • the second functional layer 14 may be a hole transport layer
  • the second electrode 15 may be an anode.
  • the light emitting element 1 may be formed on the pixel circuit board 7 , and in this case, the first electrode 11 may be provided at a position closer to the pixel circuit board 7 than the second electrode 15 .
  • the quantum dots 2 are dots made of nanoparticles with a maximum width of 100 [nm] or less. It may have a property (luminescence) in which electroluminescence occurs when a voltage V is applied between the first electrode 11 and the second electrode 15.
  • the quantum dots 2 may be of a core-shell type or a shellless type (core exposed type).
  • the shape of the quantum dots 2 is not particularly limited as long as it satisfies the above maximum width, and is not limited to a spherical three-dimensional shape (circular cross-sectional shape).
  • it may have a polygonal cross-sectional shape, a rod-like three-dimensional shape, a branch-like three-dimensional shape, a three-dimensional shape with an uneven surface, or a combination thereof.
  • the quantum dots 2 are made of, for example, MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, etc. It may include at least one of a group II-VI semiconductor crystal, a group III-V semiconductor crystal such as GaAs, GaP, InN, InAs, InP, and InSb, and a group IV semiconductor crystal such as Si and Ge.
  • the quantum dots 2 may have a structure (core-shell structure) in which the core is a semiconductor crystal as described above, and the core is overcoated with a shell material having a wider band gap than the core. Furthermore, the quantum dots 2 may have a ligand adsorbed (coordinated) on their surfaces.
  • the fluorine-containing film 3 may be a liquid-repellent film containing a liquid-repellent component, or may contain a polymer compound.
  • the fluorine-containing film 3 may be a resist film containing a liquid-repellent polymer compound.
  • the one located on the first functional layer 12 side is called the first region A1 and the second region A1.
  • the fluorine-containing film 3 may be included in the first region A1, with the region closer to the functional layer 14 being the second region A2. At least a portion of the fluorine-containing film 3 may be located under the light emitting layer 13 (between the first functional layer 12 and the quantum dots 2).
  • the light-emitting layer 13 contains fluorine, uneven placement of the quantum dots 2 on the fluorine-containing film 3 is reduced even if the fluorine-containing film 3 is liquid repellent. Thereby, it is possible to increase the carrier path and suppress variations in the light emission distribution.
  • the liquid-repellent fluorine-containing film 3 By providing the liquid-repellent fluorine-containing film 3, it has a protective function for the first functional layer 12 during the formation of the upper layer, and a barrier function after the device is completed (the fluorine-containing film 3 prevents moisture from entering from outside the device). can be obtained, and the reliability of the light emitting element 1 can be improved.
  • the fluorine-containing film 3 may be insulating, and in this case, the balance of holes and electrons (carrier balance) supplied to the light emitting layer 13 can be improved, and external luminous efficiency (EQE) can be increased.
  • the fluorine-containing film 3 may have a layered shape that contacts the first functional layer 12. This further enhances the protective function of the first functional layer 12 during the process and the barrier function after the device is completed.
  • the thickness of the fluorine-containing film 3 may be smaller than the thickness of the first functional layer 12. In this way, the surface of the first functional layer 12 can be made compatible with the light emitting layer 13 while suppressing the thickness.
  • the light-emitting layer 13 may contain a fluorine-terminated organic compound 21 (having a fluorine atom F at the end).
  • the organic compound 21 may be an additive (for example, a ligand agent).
  • the organic compound 21 may be coordinated to the quantum dot 2 as a ligand. This makes it easier for the quantum dots 2 to be dispersed in the solution, making coating formation easier. Note that since the light-emitting layer 13 contains the organic compound 21, it can be considered that the organic compound 21 functions as a ligand agent (the organic compound 21 is coordinated to the quantum dot 2).
  • the first region A1 may have a higher fluorine concentration than the second region A2. That is, in the first region A1, since the fluorine-terminated organic compound 21 and the fluorine-containing film 3 are present, the fluorine concentration is high. On the other hand, in the second region A2, since only the organic compound 21 is present, the fluorine concentration is lower than that in the first region A1. In this way, by forming the structure in which the fluorine-terminated organic compound 21 gathers on the fluorine-containing film 3 in the first region A1, the light-emitting layer 13 can be coated with a solution (a quantum dot solution containing the quantum dots 2 and the organic compound 21). This improves the wettability of the solution during formation.
  • a solution a quantum dot solution containing the quantum dots 2 and the organic compound 21
  • FIG. 3 is a cross-sectional view showing a configuration example of a display device including a light emitting element according to Embodiment 1.
  • the display device 30 has a plurality of light emitting elements 1 (1R, 1G, 1B) that emit light of different colors on the pixel circuit board 7.
  • Light-emitting layer 13 (13R) in which light-emitting element 1 (1R) emits red light
  • light-emitting layer 13 (13G) in which light-emitting element 1 (1G) emits green light
  • light-emitting element 1 (1B) emits blue light.
  • the light emitting layer 13 (13B) may also be included.
  • a plurality of light emitting elements 1 may have a common first functional layer 12 and a common second functional layer 14.
  • a plurality of light emitting elements 1 may have a common second electrode 15.
  • the sealing layer 17 may be formed to cover the second electrode 15.
  • the first electrode 11 may be provided at a position closer to the pixel circuit board 7 than the second electrode 15.
  • the light emitting element 1 in the display device 30 may include an edge cover film 8 that contacts the end surface of the first electrode 11, and the first functional layer 12 and the second functional layer 14 may extend above the edge cover film 8.
  • the edge cover film 8 is formed over a plurality of light emitting elements 1, and the area where the edge cover film 8 is not present is defined as a pixel aperture area K, and the first electrode 11 (for example, an anode) of each light emitting element 1 is formed in the pixel aperture area K. Non-edge portions may be exposed.
  • a portion located above the pixel aperture region K emits light.
  • a region located above the pixel opening region K and between the first functional layer 12 and the quantum dots 2 is defined as a third region A3, and a region above the edge cover film 8 is defined as a third region A3.
  • the region where the fluorine is located and sandwiched between the first functional layer 12 and the second functional layer 14 is referred to as a fourth region A4, and the third region A3 may have a higher fluorine concentration than the fourth region A4.
  • the part of the first functional layer 12 located above the pixel aperture area K (the part under the third area A3) can be effectively protected during and after the process (after the element is completed), and also prevents light emission.
  • the wettability of the solution when forming the layer 13 by applying the solution is improved.
  • the edge cover film 8 includes an insulating material (for example, polyimide resins, acrylic resins, novolac resins, fluorene resins, etc.).
  • the edge cover film 8 can be formed by patterning a photosensitive resin material using, for example, photolithography technology.
  • the photosensitive resin may be negative type or positive type.
  • the fluorine-containing film 3 may be a resist film containing a polymer compound having an alkyl group, and this polymer compound may contain two or more carbon atoms.
  • the thickness of the fluorine-containing film 3 may be 0.5 to 20 [nm].
  • the fluorine-containing film 3 may be formed so as to remain all together (in the form of a continuous film), or may be formed so that the resist components are scattered (in the form of islands).
  • the fluorine-containing film 3 is inserted between the light emitting layer 13 and the first functional layer 12 for one purpose of improving carrier balance, and does not need to contain the quantum dots 2.
  • the fluorine-containing film 3 may be inserted (formed) both between the first functional layer 12 and the light emitting layer 13 and between the light emitting layer 13 and the second functional layer 14.
  • the light-emitting layer 13 may contain a fluorine-terminated organic compound 21 (having a fluorine atom F at the end).
  • the fluorine-terminated organic compound 21 may be represented by the following structural formula (1) or (2). In this case, the wettability and coating properties with respect to the fluorine-containing film 3 (resist film) can be further improved.
  • the organic compound 21 includes a chain compound. This improves the dispersibility of the quantum dots 2 to which the organic compound 21 is coordinated as a ligand into a nonpolar solvent.
  • the organic compound 21 has a plurality of coordination functional groups.
  • the coordinating functional group includes at least one of a thiol group, an amino group, a carboxyl group, and a phosphino group. This improves the dispersibility of the quantum dots 2 coordinated with the organic compound 21 in the polar solvent.
  • the organic compound 21 contains a polycyclic aromatic hydrocarbon having two or more benzene rings. This improves the dispersibility of the quantum dots 2 to which the organic compound 21 (organic ligand agent) is coordinated in the aromatic compound solvent.
  • the organic compound 21 contained in the light emitting element 1 can be analyzed by MALDI-TOF-MS (Matrix Assisted Laser Desorption/Ionization - Time of Flight Mass Spectrometry), LC-MS/MS ( Identification by combining multiple analysis methods including Liquid Chromatograph - Mass Spectrometry), TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry), etc. can do.
  • MALDI-TOF-MS Microx Assisted Laser Desorption/Ionization - Time of Flight Mass Spectrometry
  • LC-MS/MS Identification by combining multiple analysis methods including Liquid Chromatograph - Mass Spectrometry
  • TOF-SIMS Time-of-Flight Secondary Ion Mass Spectrometry
  • Time-of-flight mass spectrometry includes a method of performing mass spectrometry using the fact that the flight time of ions differs depending on the mass-to-charge ratio m/z value.
  • a liquid chromatograph mass spectrometer is a device that combines a high-performance liquid chromatograph (HPLC) and a triple quadrupole mass spectrometer (MS/MS). Since the connected MS section allows a mass spectrum to be obtained that is more separated than LC-MS, it is superior in identifying molecules.
  • time-of-flight secondary ion mass spectrometry In time-of-flight secondary ion mass spectrometry (TOF-SIMS), when a sample is irradiated with a primary ion beam under ultra-high vacuum, secondary ions are emitted from the extreme surface (1 to 3 nm) of the sample.
  • TOF time-of-flight
  • a mass spectrum of the outermost surface of the sample can be obtained.
  • surface components can be detected as molecular ions that maintain their chemical structure or partially cleaved fragments, and information on the elemental composition and chemical structure of the outermost surface can be obtained. It will be done.
  • FIG. 4 is a flowchart illustrating an example of a method for manufacturing a light emitting element according to Embodiment 1.
  • the method for manufacturing a light emitting device according to the first embodiment includes a step of forming a first functional layer 12 (S10) and a step of forming a fluorine-containing film 3 on the first functional layer 12 (S10). S20), and a step (S30) of applying a solution containing the fluorine-containing organic compound 21 and the quantum dots 2 onto the fluorine-containing film 3.
  • the fluorine-containing film 3 may be a liquid-repellent resist film.
  • the organic compound 21 may be a fluorine-terminated ligand agent.
  • the quantum dots 2 used in the light-emitting layer 13 can be coordinated with the fluorine-terminated organic compound 21 as a ligand by an organic ligand substitution process.
  • the organic ligand substitution treatment may be carried out by a general method, and a solution containing the fluorine-terminated organic compound 21 is added to the initial quantum dot dispersion liquid, followed by ultrasonication or the like. If necessary, repeat this treatment (ultrasonic treatment, supernatant liquid removal, redispersion, etc.).
  • the wettability (applicability) to the fluorine-containing film 3 is improved.
  • the fluorine-containing film 3 liquid repellent, the first functional layer 12 (for example, hole transport layer) can be protected during the upper layer formation (process).
  • the polarity of the fluorine-containing film 3 may be high enough to repel highly polar water.
  • the material of the first functional layer 12 when the first functional layer 12 is a hole transport layer, a hole that is injected from the first electrode 11, which is an anode, can be transported to the quantum dot layer 13. It is not particularly limited as long as it is a pore-transporting material.
  • TFB which is a material that does not contain nanoparticles, can be used.
  • the second functional layer 14 when the second functional layer 14 is an electron transport layer, electron transport capable of transporting electrons injected from the second electrode 15, which is a cathode, to the quantum dot layer 13. It is not particularly limited as long as it is a flexible material.
  • TPBi which is a material that does not contain nanoparticles, can be used.
  • the material for the hole transport layer is poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-4-sec-butylphenyl)) diphenylamine)] (TFB), poly(4-butyltriphenylamine) (p-TPD), poly(9-vinylcarbazole) (PVK), [9,9'-[1,2-phenylenebis(methylene)] Bis[N3,N3,N6,N6-tetrakis(4-methoxyphenyl)-9H-carbazole-3,6-diamine] (V886), 7,7'-bi[1,4]benzoxazino[2,3,4 -kl]phenoxazine (HN-D1), and inorganic materials such as NiO nanoparticles.
  • ETL electron transport layer
  • TTL electron transport layer
  • TBPi (2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)
  • BCP bathocuproine
  • organometallic complex nanoparticles for example, tris(8-quinolinol) aluminum complex ( Alq3), etc.
  • n-type oxide semiconductors include metal oxides such as ZnO and ZnMgO.
  • FIG. 5 is a cross-sectional view showing the configuration and carrier path of a comparative example.
  • FIG. 6 is a cross-sectional view showing a carrier path of the light emitting element according to the first embodiment.
  • the ligands of the quantum dots Q on the liquid-repellent resist layer do not contain fluorine.
  • gaps are likely to be formed in the light-emitting layer, leading to increased interface defects between the resist layer and the light-emitting layer and deterioration of the flatness of the light-emitting layer.
  • the number of carrier paths is limited due to the formation of the gap, which tends to cause in-plane variations in luminance.
  • the light emitting element 1 according to the first embodiment as shown in FIG. 6, gaps are hardly formed on the fluorine-containing film 3. Therefore, the occurrence of interface defects between the fluorine-containing film 3 and the light-emitting layer 13 is reduced, and the flatness of the light-emitting layer 13 is improved. Furthermore, since the number of carrier paths CP increases, the light emission distribution of the light emitting layer 13 becomes uniform, and the voltage between the first electrode 11 and the second electrode 15 also becomes smaller.
  • the ultra-thin insulating film may be made of, for example, PMMA (poly(methylmethacrylate)), PEIE (polyethylenimine ethoxylated), PEI (polyethylenimine), or the like.
  • FIGS. 7 and 8 are schematic diagrams showing the configuration of a light emitting element according to the second embodiment.
  • a fluorine-terminated organic substance 21 and a halogen atom 23 are coordinated to the quantum dot 2 as ligands.
  • the halogen atom 23 may be a fluorine atom (F) bonded to the surface of the quantum dot 2.
  • the organic compound 21 may be a long chain ligand, and the halogen atom may be a short chain ligand.
  • the gap between the fluorine-containing film 3 and the quantum dots 2 can be filled by the short-chain ligands bonding to the quantum dots 2 so as to fit between the long-chain ligands.
  • the quantum dots 2 By providing the quantum dots 2 with halogen atoms 23 as ligands in addition to the organic compound 21, the wettability, coatability, and reliability of the fluorine-containing film 3 are further improved. Since the surface defects of the quantum dots 2 are compensated for by the halogen atoms 23, the luminous efficiency is also improved.
  • the organic compound 21 and the halogen element may be included in the solution shown in FIG.
  • quantum dots 2 in which a fluorine-terminated organic compound 21 and a halogen atom 23 are coordinated are arranged, the present invention is not limited thereto. As shown in FIG. 8, quantum dots 2 in which a fluorine-terminated organic compound 21 and a halogen atom 23 are coordinated are placed at the interface with the fluorine-containing film 3 (for example, in the first layer), and in other parts, Quantum dots 2 in which only the organic compound 21 is coordinated may be arranged. Note that when the ligand is only a halogen atom, the dispersibility of the quantum dots becomes low.
  • FIG. 9 is a flowchart illustrating an example of a method for manufacturing a light emitting element according to the third embodiment.
  • FIG. 10 is a cross-sectional view illustrating an example of a method for manufacturing a light emitting element according to Embodiment 3.
  • a step of forming the edge cover film 8 (S50), a step of forming the first functional layer 12 (S60), and a planar formation of a liquid-repellent resist film RZ on the first functional layer 12 are shown.
  • the step of forming (S70, see FIG. 10), the step of patterning the planar resist film RZ (S80, see FIG. 10), and the step of patterning the planar resist film RZ (S80, see FIG. 10), on the liquid-repellent resist pattern RP obtained in step S80 contain fluorine.
  • a step of applying a solution YK containing the organic compound 21 and the quantum dots 2 (S90, see FIG. 10) is performed.
  • the resist film for example, island-shaped residual resist film
  • the resist film remaining on the region where the edge cover film 8 does not exist (pixel opening region K) contains fluorine.
  • a solution YK containing the quantum dots 2, a fluorine-terminated organic compound 21 (organic ligand agent), and a solvent 25 may be applied onto the fluorine-containing film 3, which is the remaining resist film.
  • Solution YK may be supplied entirely. Since the fluorine-containing film 3, which is the remaining resist film, has lower liquid repellency than the resist film RZ, the solution YK can be selectively applied onto the pixel opening region K.
  • the light emitting layer 13 can be formed by removing the solvent 25 from the solution (coating liquid) YK.
  • solution YK can be applied even on the remaining liquid-repellent resist film (fluorine-containing film 3), and the quantum dots 2 can be coated without large gaps. Placed. Furthermore, carrier balance can be improved by adjusting the mobility of holes or electrons using the fluorine-containing film 3 (insulating liquid-repellent film) that is the remaining resist film, and the luminous efficiency can be increased.

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WO2025215732A1 (ja) * 2024-04-09 2025-10-16 シャープディスプレイテクノロジー株式会社 発光素子、表示装置、及び表示装置の製造方法
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