WO2024024483A1 - レジストパターンの検査方法、レジストパターンの製造方法、基板選別方法、及び、半導体パッケージ基板又はプリント配線板の製造方法 - Google Patents

レジストパターンの検査方法、レジストパターンの製造方法、基板選別方法、及び、半導体パッケージ基板又はプリント配線板の製造方法 Download PDF

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WO2024024483A1
WO2024024483A1 PCT/JP2023/025479 JP2023025479W WO2024024483A1 WO 2024024483 A1 WO2024024483 A1 WO 2024024483A1 JP 2023025479 W JP2023025479 W JP 2023025479W WO 2024024483 A1 WO2024024483 A1 WO 2024024483A1
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Prior art keywords
resist pattern
substrate
light
manufacturing
pattern
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Ceased
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PCT/JP2023/025479
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English (en)
French (fr)
Japanese (ja)
Inventor
哲也 加藤
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Resonac Corp
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Resonac Corp
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Priority to JP2024536935A priority Critical patent/JPWO2024024483A1/ja
Priority to US18/858,175 priority patent/US20250147432A1/en
Priority to KR1020257004285A priority patent/KR20250040968A/ko
Priority to CN202380035953.9A priority patent/CN119546949A/zh
Publication of WO2024024483A1 publication Critical patent/WO2024024483A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6402—Atomic fluorescence; Laser induced fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images

Definitions

  • the present disclosure relates to a method for inspecting a resist pattern, a method for manufacturing a resist pattern, a method for selecting a substrate, and a method for manufacturing a semiconductor package substrate or a printed wiring board.
  • a photosensitive layer is laminated on the substrate.
  • predetermined portions of the photosensitive layer are irradiated with active light through a photomask to cure the exposed portions.
  • a resist pattern is formed on the substrate by removing the unexposed portion of the photosensitive layer with a developer.
  • the substrate on which the resist pattern has been formed is subjected to etching or plating to form a conductive pattern on the substrate, and finally the cured portion of the photosensitive layer (resist pattern) is removed from the substrate. Peel and remove.
  • the present disclosure aims to provide a method for inspecting a resist pattern, a method for manufacturing a resist pattern, a method for selecting a substrate, and a method for manufacturing a semiconductor package substrate or a printed wiring board, which can evaluate a resist pattern with high precision in a short time. purpose.
  • the resist pattern inspection method of the present disclosure includes an appearance inspection step of visually inspecting the resist pattern based on light emitted from a substrate on which the resist pattern is formed.
  • This resist pattern inspection method visually inspects the resist pattern based on light emitted from the substrate on which the resist pattern is formed, so it can detect defects in the resist pattern in a shorter time and with higher precision than the visual inspection using an SEM. can be detected.
  • the outline of the resist pattern is detected based on light emitted from the substrate, and the resist pattern is visually inspected based on the detected outline. good.
  • the outline of the resist pattern detected based on light emitted from the substrate is used as the visual inspection of the resist pattern, so that the resist pattern can be appropriately visually inspected.
  • the detected contour may be compared with pattern data for forming the resist pattern in the appearance inspection step.
  • defects in the resist pattern can be detected with high precision by comparing the detected contour with pattern data for forming the resist pattern as an external appearance inspection of the resist pattern.
  • the line width of the resist pattern may be measured based on the detected contour.
  • the formation state of the resist pattern can be evaluated by measuring the line width of the resist pattern based on the detected outline as an appearance inspection of the resist pattern.
  • a resist pattern forming step of forming a resist pattern on a substrate and after the resist pattern forming step, the resist pattern is exposed to light. It may further include a luminescent material impregnation step of impregnating a material.
  • the resist pattern inspection method after forming a resist pattern on a substrate, the resist pattern is impregnated with a luminescent material to increase the luminous intensity of the resist pattern. The contrast between the light emission and the light emission increases. Therefore, the accuracy of detecting the outline of the resist pattern based on the light emitted from the substrate can be improved.
  • a resist pattern containing a compound that reacts with light and is converted into a luminescent material may be formed.
  • the luminescence intensity of the resist pattern can be increased. Thereby, the accuracy of detecting the outline of the resist pattern based on the light emitted from the substrate can be improved.
  • a resist pattern having a thickness of 0.05 ⁇ m or more and 500 ⁇ m or less may be formed.
  • this resist pattern inspection method by forming a resist pattern with a thickness of 0.05 ⁇ m or more and 500 ⁇ m or less, it is possible to prevent the resist pattern from becoming too thick, and to prevent light emission from the resist pattern and from areas other than the resist pattern. It is possible to increase the contrast between the light emission and the light emission. Therefore, the accuracy of detecting the outline of the resist pattern based on the light emitted from the substrate can be improved.
  • the method for manufacturing a resist pattern according to the present disclosure includes a resist pattern forming step of forming a resist pattern on a substrate, and a luminescent material impregnation step of impregnating the resist pattern with a luminescent material after the resist pattern forming step. Be prepared.
  • the resist pattern is formed on a substrate and then impregnated with a luminescent material, thereby increasing the luminescence intensity of the resist pattern.
  • the contrast between the light emission and the light emission increases. Therefore, for example, when detecting the outline of a resist pattern based on light emitted from a substrate on which a resist pattern is formed, detection accuracy can be improved. Furthermore, when measuring the line width of a resist pattern, it becomes easier to focus on the surface of the resist pattern or the outline of the resist pattern.
  • a resist pattern containing a compound that reacts with light and is converted into a luminescent material may be formed.
  • the luminescence intensity of the resist pattern can be increased. Thereby, for example, the accuracy of detecting the outline of the resist pattern based on the light emitted from the substrate can be improved.
  • a resist pattern having a thickness of 0.05 ⁇ m or more and 500 ⁇ m or less may be formed.
  • the resist pattern is prevented from becoming too thick, and light emission from the resist pattern and from areas other than the resist pattern are prevented. It is possible to increase the contrast between the light emission and the light emission. Therefore, for example, the accuracy of detecting the outline of a resist pattern based on the light emitted from the substrate can be improved.
  • the substrate selection method includes a visual inspection step in which the resist pattern is visually inspected based on light emitted from the substrate on which the resist pattern is formed, and a resist pattern is evaluated based on the visual inspection in the visual inspection step. and an evaluation step.
  • the resist pattern is evaluated by visual inspection of the resist pattern based on the light emitted from the substrate, so the substrates can be sorted in a shorter time and with high precision compared to visual inspection using SEM.
  • the resist pattern in the evaluation step, may be evaluated based on the number or shape of defects in the resist pattern.
  • the substrate in this substrate selection method, can be appropriately evaluated by evaluating the resist pattern based on the number or shape of defects in the resist pattern.
  • the resist pattern of the substrate to be visually inspected in the visual inspection step may be impregnated with a luminescent material.
  • the resist pattern of the substrate to be visually inspected in the visual inspection step is impregnated with a luminescent material, the contrast between the light emitted from the resist pattern and the light emitted from a region other than the resist pattern is increased. Therefore, the appearance inspection of the resist pattern can be performed with high precision.
  • the method for manufacturing a semiconductor package substrate or printed wiring board according to the present disclosure includes etching a substrate whose resist pattern evaluation in the substrate selection method according to any one of [11] to [13] satisfies the criteria.
  • a conductor pattern forming step is provided in which a conductor pattern is formed by processing or plating.
  • conductive patterns are formed by etching or plating the substrates that meet the evaluation criteria of the resist pattern in the above-mentioned substrate selection method. The occurrence of defects can be suppressed.
  • a resist pattern can be evaluated with high accuracy in a short time.
  • FIG. 1(a) is a schematic perspective view for explaining the photosensitive layer forming step in the resist pattern forming step
  • FIG. 1(b) is a schematic perspective view for explaining the exposure step in the resist pattern forming step
  • 1(c) is a schematic perspective view for explaining the developing step in the resist pattern forming step.
  • FIGS. 2A, 2B, and 2C are schematic perspective views for explaining the formation of a conductor pattern based on a defective resist pattern.
  • FIG. 3 is a schematic perspective view for explaining the appearance inspection process.
  • FIG. 4 is a schematic diagram for explaining light emission from the substrate.
  • a or B may include either A or B, or both.
  • a resist pattern inspection method includes an appearance inspection step of visually inspecting a resist pattern based on light emitted from a substrate on which a resist pattern is formed.
  • the resist pattern inspection method may include a resist pattern forming step of forming a resist pattern on the substrate before the appearance inspection step.
  • the resist pattern inspection method may include a luminescent material impregnation step of impregnating the resist pattern with a luminescent material.
  • the resist pattern inspection method may include other steps.
  • the term "process” is used not only to refer to an independent process, but also to include a process in which the intended effect of the process is achieved even if the process cannot be clearly distinguished from other processes.
  • the resist pattern can be said to be a pattern of a photocured product of a photosensitive resin composition, or a relief pattern.
  • the resist pattern forming process includes a photosensitive layer forming process in which a photosensitive layer is laminated on a substrate (see FIG. 1(a)), and a photocuring area in which a predetermined portion of the photosensitive layer is irradiated with actinic rays. (see FIG. 1(b)), and a developing step (see FIG. 1(c)) to remove a region other than a predetermined portion of the photosensitive layer from the substrate.
  • the resist pattern forming step may include other steps as necessary.
  • a photosensitive layer 2 and a support 3 are formed on a substrate 1.
  • the substrate 1 includes, for example, an insulating layer 1a and a conductor layer 1b formed on the insulating layer 1a.
  • the photosensitive layer 2 is formed on the conductor layer 1b of the substrate 1.
  • the conductor layer 1b is, for example, electroless copper plating.
  • the photosensitive layer 2 is a layer formed using a photosensitive resin composition whose properties change (for example, photocures) when irradiated with light.
  • the photosensitive resin composition forming the photosensitive layer 2 contains, for example, a binder polymer, a photopolymerizable compound, and a photopolymerization initiator.
  • the photosensitive resin composition forming the photosensitive layer 2 may contain a photosensitizer, a polymerization inhibitor, or other components as necessary.
  • the photosensitive resin composition forming the photosensitive layer 2 includes, for example, dyes such as malachite green, Victoria pure blue, brilliant green, and methyl violet, tribromophenyl sulfone, leuco crystal violet, diphenylamine, benzylamine, triphenylamine, and diethyl.
  • Photocoloring agents such as aniline and o-chloroaniline, thermal coloration inhibitors, plasticizers such as p-toluenesulfonamide, pigments, fillers, antifoaming agents, flame retardants, adhesion agents, leveling agents, peeling accelerators , antioxidants, fragrances, imaging agents, thermal crosslinking agents, and other additives.
  • a polymer film (support film) having heat resistance and solvent resistance such as polyester such as polyethylene terephthalate (PET), polyolefin such as polypropylene, and polyethylene, may be used.
  • the photosensitive element includes, for example, a support, a photosensitive layer, and a protective layer in this order. After removing the protective layer, the photosensitive layer of the photosensitive element is pressed onto the substrate 1 while being heated, thereby forming the photosensitive layer 2 and the support 3 on the substrate 1. As a result, a laminate 4 including the substrate 1, the photosensitive layer 2, the support 3, and the support film (not shown) in this order is obtained. Note that an intermediate layer or the like may be arranged between the support 3 and the photosensitive layer 2.
  • the photosensitive layer 2 is exposed to actinic light through the support 3.
  • the exposed area irradiated with the actinic light is photocured, and a photocured area 2a (latent image) is formed.
  • a known exposure method can be applied, such as a method of irradiating actinic rays imagewise through a photomask 5 called artwork (mask exposure method), an LDI (Laser Direct Imaging) exposure method, or , a method of irradiating image-wise through a lens using actinic light onto which an image of a photomask is projected (projection exposure method), and the like.
  • the thickness of the resist pattern 6 formed on the substrate 1 may be, for example, 0.05 ⁇ m or more, 0.1 ⁇ m or more, 1 ⁇ m or more, or 5 ⁇ m or more. Further, the thickness of the resist pattern 6 formed on the substrate 1 may be, for example, 500 ⁇ m or less, 300 ⁇ m or less, 100 ⁇ m or less, or 60 ⁇ m or less. The minimum value and maximum value of the thickness of these resist patterns 6 can be appropriately combined.
  • the thickness of the resist pattern 6 formed on the substrate 1 may be 0.05 ⁇ m or more and 500 ⁇ m or less, 0.1 ⁇ m or more and 300 ⁇ m or less, 1 ⁇ m or more and 100 ⁇ m or less, or 5 ⁇ m or more and 60 ⁇ m or less.
  • the thickness of the resist pattern 6 is the height relative to the substrate 1 in the direction perpendicular to the main surface of the substrate 1.
  • the resist pattern 6 formed on the substrate 1 has, for example, luminescent properties.
  • Light emission is also called luminescence (cold light), and refers to, for example, when a device is irradiated with excitation light such as inspection light, it absorbs the excitation light and emits light. Furthermore, light emission refers to light emitted in this manner.
  • the light emission includes fluorescence, phosphorescence, and the like. Fluorescence is light emission that stops immediately when the excitation light irradiation is stopped. Phosphorescence is light emission that continues even after the irradiation of light such as inspection light is stopped.
  • Having luminescent property means having such a property of emitting light, that is, having a property of emitting light by absorbing the excitation light when irradiated with the excitation light. Note that the resist pattern 6 does not need to have luminescence. Further, when performing a luminescent material impregnation step to be described later, the resist pattern 6 before performing the luminescent material impregnation step does not need to have luminescence.
  • the resist pattern 6 formed on the substrate 1 contains, for example, a compound that reacts with light and is converted into a luminescent material.
  • a luminescent material is a dye that emits light when irradiated with excitation light.
  • xanthene dyes coumarin dyes, pyrazoline dyes, dipyrromethene dyes, anthracene dyes, pyrene dyes, perylene dyes, lophine dyes (also referred to as lophines, lophine compounds, etc.), etc. may be used.
  • hexaarylbiimidazole As the compound that reacts with light and is converted into a luminescent material, hexaarylbiimidazole, hexaarylbiimidazole derivatives, and the like may be used. Note that the resist pattern 6 does not need to contain a compound that reacts with light and is converted into a luminescent material.
  • the resist pattern 6 is impregnated with a luminescent material in order to increase the luminescent intensity of the resist pattern 6.
  • a luminescent material is a material that emits light when irradiated with excitation light. If the luminescent material is a fluorescent material, this emission will be fluorescence. If the luminescent material is a phosphorescent material, this emission will be phosphorescent.
  • a luminescent dye fluorescent dye or phosphorescent dye
  • a luminescent dye that emits light when irradiated with excitation light may be used.
  • the luminescent dye for example, xanthene dyes, coumarin dyes, pyrazoline dyes, dipyrromethene-dipromethene dyes, anthracene dyes, pyrene dyes, perylene dyes, lophine dyes, etc. may be used.
  • a fluorescent stain containing a luminescent dye may be used. In the luminescent material impregnation step, for example, the substrate 1 on which the resist pattern 6 is formed is immersed in a fluorescent dyeing liquid as a luminescent material.
  • the fluorescent staining solution examples include saturated aqueous solutions of xanthene dyes, coumarin dyes, pyrazoline dyes, dipyrromethene dipromethene dyes, anthracene dyes, pyrene dyes, perylene dyes, and lophine dyes.
  • a saturated aqueous solution of Rhodamine B (Fuji Film Wako Pure Chemical Industries, Ltd.), which is a xanthene dye, is used.
  • the solvent examples include water, methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N,N-dimethylformamide, propylene glycol monomethyl ether, and mixed solvents thereof.
  • the entire substrate 1 may be immersed in the fluorescent dyeing solution, or a portion of the substrate 1 may be immersed in the fluorescent dyeing solution so that the entire resist pattern 6 is immersed in the fluorescent dyeing solution.
  • a fluorescent dyeing liquid may be dropped onto the substrate 1 on which the resist pattern 6 is formed.
  • the fluorescent dyeing liquid may be dropped on the entire substrate 1, or may be dropped on a part of the substrate 1 so that the fluorescent dyeing liquid is dropped on the entire resist pattern 6.
  • the luminescent material may be added to the developer and rinse solution for removing the uncured portion 2b of the photosensitive layer 2 from the substrate 1.
  • the fluorescent dye liquid is removed from areas other than the resist pattern 6.
  • a method for removing the fluorescent dyeing solution for example, after the resist pattern 6 is impregnated with the fluorescent dye, it may be sufficiently washed with water and then air-blown dried.
  • ⁇ Appearance inspection process the appearance of the resist pattern 6 is inspected based on light emission (fluorescence or phosphorescence) from the substrate 1 on which the resist pattern 6 is formed. That is, in the appearance inspection process, the appearance of the resist pattern 6 is inspected based on the light emitted from the substrate 1.
  • the resist pattern 6 is visually inspected in order to find defects before forming the conductor pattern.
  • the outline of the resist pattern 6 is detected based on light emitted from the substrate 1, and the appearance of the resist pattern 6 is inspected based on the detected outline.
  • inspection light as excitation light is emitted onto the substrate 1 on which the resist pattern 6 is formed, and the light emitted from the substrate 1 is received. That is, the light emitted from the substrate 1 is received.
  • the wavelength of the inspection light may be, for example, 390 nm or less, 380 nm or less, or 370 nm or less. Further, the wavelength of the inspection light may be, for example, 190 nm or more, 250 nm or more, or 300 nm or more. The minimum value and maximum value of these wavelengths can be combined as appropriate.
  • the wavelength of the inspection light may be 390 nm or less and 190 nm or more, 380 nm or more and 250 nm or more, or 370 nm or more and 300 nm or more.
  • the light sources for the inspection light include carbon arc lamps, mercury vapor arc lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, xenon lamps, gas lasers such as argon lasers, solid-state lasers such as YAG lasers, semiconductor lasers, LEDs, and other light sources. etc., and only the light having the wavelength of the above inspection light can be used by using an optical filter.
  • the wavelength range in which luminescence is sensed can be changed arbitrarily, and may be, for example, visible light from 400 nm to 800 nm.
  • the wavelength range for light emission sensing may be blue light of 400 nm to 500 nm, green light of 500 nm to 600 nm, or red light of 600 nm to 800 nm, and one wavelength range can be used alone or two or more wavelength ranges can be used in combination.
  • the light-receiving area of the substrate 1 that receives light emission in the visual inspection process may be, for example, 1 cm 2 or more and 2500 cm 2 or less, 5 cm 2 or more and 1200 cm 2 or less, or 25 cm 2 or more and 600 cm 2 or less.
  • the outline 10 of the resist pattern 6 is specified based on the contrast between the light emitted from the resist pattern 6 and the light emitted from a region other than the resist pattern 6. For example, in a received light image of emitted light, a boundary where contrast such as brightness or chromaticity increases is detected. Then, this detected boundary is specified as the outline 10 of the resist pattern 6.
  • an automatic optical visual inspection device such as AOI Orbotech Ultra Dimension 800 (manufactured by Nippon Orbotech Co., Ltd., trade name) is used, for example.
  • the appearance inspection of the resist pattern 6 includes, for example, an inspection to check the presence or absence of a defect 8 in the resist pattern 6, an inspection to check the shape, position, size, etc. (hereinafter also referred to as "shape etc.") of the defect 8 in the resist pattern 6, Examples include an inspection that examines the shape of the resist pattern 6 or an inspection that measures the line width of the resist pattern 6.
  • the outline 10 of the resist pattern 6 detected based on the light emission from the substrate 1 and the resist 6 will be compared with pattern data 11 for forming pattern data 11.
  • pattern data 11 for example, CAD data of the resist pattern 6 is used.
  • a portion 10a where the detected contour 10 differs from the pattern data 11 is detected as a defect 8 in the resist pattern 6.
  • the number of detected defects 8 is calculated.
  • the outline 10 of the resist pattern 6 detected based on the light emitted from the substrate 1 and the The pattern data 11 for forming pattern 6 will be compared. Then, a portion 10a where the detected contour 10 differs from the pattern data 11 is detected as a defect 8 in the resist pattern 6. Then, based on the outline of the detected defect 8, the shape etc. of the detected defect 8 is investigated.
  • the contour 10 of the resist pattern 6 detected based on the light emitted from the substrate 1 and the shape of the resist pattern 6 formed in the resist pattern forming process are used.
  • the line width of the resist pattern 6 is measured by measuring the interval between the contours 10 of the resist pattern 6 detected based on light emission from the substrate 1.
  • the resist pattern manufacturing method includes a resist pattern forming step of forming a resist pattern 6 on the substrate 1, and a luminescent material impregnation step of impregnating the resist pattern with a luminescent material after the resist pattern forming step.
  • the resist pattern forming step of the resist pattern manufacturing method may be the same as the resist pattern forming step of the resist pattern inspection method described above.
  • the luminescent material impregnation step in the resist pattern manufacturing method may be, for example, the same as the luminescent material impregnation step in the resist pattern inspection method described above.
  • the resist pattern manufacturing method may include other steps.
  • the substrate selection method includes an appearance inspection step of visually inspecting the resist pattern 6 based on light emitted from the substrate 1 on which the resist pattern 6 is formed, and a visual inspection step of visually inspecting the resist pattern 6 based on the appearance inspection in the appearance inspection step. and an evaluation step for evaluating.
  • the appearance inspection step of the substrate selection method may be, for example, similar to the appearance inspection step of the resist pattern inspection method described above.
  • the resist pattern of the substrate to be visually inspected in the visual inspection step may be impregnated with a luminescent material.
  • the substrate sorting method may include other steps.
  • the resist pattern 6 is evaluated based on predetermined criteria.
  • the resist pattern 6 is evaluated based on the number of defects 8 in the resist pattern 6 in the evaluation process. For example, in the evaluation step, the resist pattern 6 is evaluated as good if the number of defects 8 is less than a predetermined reference number, and the resist pattern 6 is evaluated as poor if the number of defects 8 exceeds the predetermined reference number.
  • the resist pattern 6 is evaluated based on the size of the defect 8 in the resist pattern 6 in the evaluation process. For example, in the evaluation process, if the shape of the defect 8 in the resist pattern 6 is within a predetermined tolerance range, it is evaluated as good, and if the shape of the defect 8 in the resist pattern 6 is outside the predetermined tolerance range, it is evaluated as poor. .
  • the resist pattern 6 is evaluated based on the shape of the resist pattern 6 in the evaluation process. For example, in the evaluation step, if the degree of difference in shape of resist pattern 6 with respect to pattern data 11 is within a predetermined tolerance range, it is considered acceptable; It is considered defective.
  • the resist pattern 6 is evaluated based on the line width of the resist pattern 6 in the evaluation process. For example, in the evaluation process, if the line width of the resist pattern 6 is within a predetermined reference range, it is evaluated as good, and if the line width of the resist pattern 6 is outside the predetermined reference range, it is evaluated as poor.
  • the method for manufacturing a semiconductor package substrate or printed wiring board according to the present embodiment includes a conductor pattern forming step in which a conductor pattern is formed by etching or plating a substrate whose resist pattern evaluation in the above-described substrate selection method satisfies the criteria. Equipped with. That is, in the conductor pattern forming process, a conductor pattern is not formed by etching or plating on a substrate whose resist pattern evaluation in the substrate selection method does not meet the criteria.
  • the method for manufacturing a semiconductor package substrate or a printed wiring board according to the present embodiment may include other steps such as a resist pattern removal step as necessary.
  • the method for manufacturing a semiconductor package substrate or a printed wiring board is a method for manufacturing a semiconductor package substrate or a printed wiring board, and is a method for manufacturing a semiconductor package substrate or a method for manufacturing a printed wiring board.
  • a semiconductor package substrate or a printed wiring board is manufactured by the manufacturing method.
  • the conductor layer of the substrate that is not covered with the resist is etched away using a resist pattern formed on the substrate including the conductor layer as a mask. After the etching process, the resist is removed by removing the resist pattern 6 to form a conductor pattern.
  • the plating process using a resist pattern 6 formed on the substrate 1 having the conductor layer 1b as a mask, copper or Plating solder, etc.
  • the resist is removed by removing the resist pattern 6, and as shown in FIG. 6(c), the conductor layer 1b covered with this resist is etched. , a conductor pattern 9 is formed.
  • the plating method may be electrolytic plating or electroless plating, and among these, electrolytic plating may be used.
  • the resist pattern 6 is visually inspected based on the light emitted from the substrate 1 on which the resist pattern 6 is formed. Therefore, defects 8 in resist pattern 6 can be detected with high precision in a short time.
  • the outline 10 of the resist pattern 6 detected based on the light emission from the substrate 1 on which the resist pattern 6 is formed is used to inspect the appearance of the resist pattern 6. 6 can be appropriately visually inspected.
  • defects 8 of the resist pattern 6 are detected with high precision by comparing the detected outline 10 and pattern data 11 for forming the resist pattern 6 as an external appearance inspection of the resist pattern 6. can be detected.
  • the formation state of the resist pattern 6 can be evaluated by measuring the line width of the resist pattern 6 based on the detected outline 10 as an appearance inspection of the resist pattern 6.
  • this resist pattern inspection method by impregnating the resist pattern 6 with a luminescent material after forming the resist pattern 6 on the substrate 1, the luminescence intensity of the resist pattern 6 increases, so that the luminescence from the resist pattern 6 increases.
  • the contrast between the light emission and the light emitted from the area other than the resist pattern 6 becomes large. Therefore, the accuracy of detecting the outline 10 of the resist pattern 6 based on the light emitted from the substrate 1 can be improved.
  • the light emission intensity of the resist pattern 6 can be increased by forming the resist pattern 6 containing a compound that reacts with light and is converted into a luminescent material. Thereby, the accuracy of detecting the outline 10 of the resist pattern 6 based on the light emitted from the substrate 1 can be improved.
  • the thickness of the resist pattern 6 formed on the substrate 1 is, for example, 0.05 ⁇ m or more. , 0.1 ⁇ m or more, 1 ⁇ m or more, or 5 ⁇ m or more.
  • the thickness of the resist pattern 6 formed on the substrate 1 may be, for example, 500 ⁇ m or less, 300 ⁇ m or less, 100 ⁇ m or less, or 60 ⁇ m or less.
  • the minimum value and maximum value of the thickness of these resist patterns 6 can be appropriately combined.
  • the thickness of the resist pattern 6 formed on the substrate 1 may be 0.05 ⁇ m or more and 500 ⁇ m or less, 0.1 ⁇ m or more and 300 ⁇ m or less, 1 ⁇ m or more and 100 ⁇ m or less, or 5 ⁇ m or more and 60 ⁇ m or less.
  • the resist pattern 6 is thick. It is possible to increase the contrast between the light emitted from the resist pattern 6 and the light emitted from the area other than the resist pattern 6 while suppressing the amount of light from becoming too large. Therefore, the accuracy of detecting the outline 10 of the resist pattern 6 based on the light emitted from the substrate 1 can be improved.
  • the resist pattern manufacturing method by impregnating the resist pattern 6 with a luminescent material after forming the resist pattern 6 on the substrate 1, the luminescence intensity of the resist pattern 6 increases.
  • the contrast between the light emission from the area and the light emission from areas other than the resist pattern 6 becomes large. Therefore, for example, when detecting the outline 10 of the resist pattern 6 based on the light emitted from the substrate 1 on which the resist pattern 6 is formed, detection accuracy can be improved. Further, when measuring the line width of the resist pattern 6, etc., it becomes easier to focus on the surface of the resist pattern 6 or the outline of the resist pattern 6.
  • the light emission intensity of the resist pattern 6 can be increased by forming the resist pattern 6 containing a compound that reacts with light and is converted into a luminescent material.
  • the accuracy of detecting the outline 10 of the resist pattern 6 based on the light emitted from the substrate 1 can be improved.
  • the resist pattern 6 is formed by forming a resist pattern 6 having a thickness of 0.05 ⁇ m or more and 500 ⁇ m or less, 0.1 ⁇ m or more and 300 ⁇ m or less, 1 ⁇ m or more and 100 ⁇ m or less, or 5 ⁇ m or more and 60 ⁇ m or less. It is possible to increase the contrast between the light emitted from the resist pattern 6 and the light emitted from the area other than the resist pattern 6 while suppressing the resist pattern from becoming too thick. Therefore, for example, the accuracy of detecting the outline 10 of the resist pattern 6 based on the light emitted from the substrate 1 can be improved.
  • the resist pattern 6 is evaluated by visual inspection of the resist pattern 6 based on light emission from the substrate 1 on which the resist pattern 6 is formed, so it is shorter than the visual inspection using an SEM.
  • the substrates 1 can be selected with high accuracy in a short time.
  • the substrate 1 can be appropriately evaluated by evaluating the substrate 1 based on the number or shape of defects in the resist pattern 6.
  • the resist pattern 6 of the substrate 1 to be visually inspected in the visual inspection process is impregnated with a luminescent material, there is a gap between the light emitted from the resist pattern 6 and the light emitted from the area other than the resist pattern 6. The contrast increases. Therefore, the appearance of the resist pattern 6 can be inspected with high precision.
  • the conductor pattern 9 is formed by etching or plating the substrate 1 whose evaluation of the resist pattern 6 in the substrate selection method described above satisfies the criteria. , the occurrence of defects such as disconnection or short-circuiting of the conductor pattern 9 can be suppressed.
  • Photosensitive Element and Substrate In Examples 1 to 5 and Comparative Example 1, the photosensitive element and substrate shown in Table 1 and below were used. The last two digits of the trade name of the photosensitive element indicate the thickness of the photosensitive layer (unit: ⁇ m).
  • Examples 1, 3 to 4, and Comparative Example 1 S-1, which had been stored under moisture-proof conditions, was used as a substrate having a copper layer as a conductive layer.
  • a substrate having a copper layer as a conductive layer was pickled and washed with water, dried with an air stream, and then heated to 80°C. Thereafter, in Examples 1 to 5 and Comparative Example 1, the photosensitive element was laminated on the surface of the copper layer of the substrate.
  • the laminate was laminated using a heat roll at 110° C. with a pressure of 0.4 MPa and 1° C. while peeling off the protective layer of the photosensitive element so that the photosensitive layer of the photosensitive element was in contact with the surface of the copper layer of the substrate.
  • the roll speed was 0.0 m/min.
  • the support After exposure, the support is peeled off to expose the photosensitive layer, and a 1% by mass aqueous sodium carbonate solution at 30°C is sprayed for a time twice as long as the shortest development time (the shortest time for removing the unexposed areas). A portion was removed (development processing).
  • a developed substrate exposed using a resolution evaluation photomask is referred to as a resolution evaluation pattern substrate, and a developed developed substrate exposed using a pattern inspection photomask is referred to as an inspection pattern substrate.
  • the resolution was evaluated based on the value of /space width.
  • the exposure amount is set such that the line width of the resist pattern is 30.0 ⁇ m. The above predetermined amount of energy was used.
  • a direct drawing exposure device manufactured by Nippon Orbotech Co., Ltd., product name: "Nuvogo Fine"
  • the visual inspection time was evaluated, and for Examples 1 to 5, the pattern detection rate of defects in the resist pattern was also evaluated as inspection accuracy.
  • the pattern detection rate (inspection accuracy) refers to the probability that the inspection device was able to identify the outline of the resist pattern and recognize the pattern when performing the visual inspection.
  • the inspection device before performing the visual inspection, use the inspection device to set the appropriate gray level (threshold value for light and dark binary conversion) according to each of Examples 1 to 5, and once this setting is completed, it is OK. If the process is not completed and an error occurs, it is judged as NG.
  • A is the case where it is OK every time
  • B is a case where it is not OK every time but the probability of NG is low
  • the probability of NG is high.
  • the case was designated as C.
  • less than 10 minutes/ cm2 was graded A
  • 10 minutes/cm2 or more and less than 5000 minutes/ 100cm2 was graded B
  • 5000 minutes/100cm2 or more was graded C.
  • the pattern detection rate was high. From this result, it was confirmed that the outline of the resist pattern can be easily detected and the inspection accuracy is high in the visual inspection of the resist pattern performed based on the fluorescence from the substrate on which the resist pattern is formed.

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PCT/JP2023/025479 2022-07-27 2023-07-10 レジストパターンの検査方法、レジストパターンの製造方法、基板選別方法、及び、半導体パッケージ基板又はプリント配線板の製造方法 Ceased WO2024024483A1 (ja)

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KR1020257004285A KR20250040968A (ko) 2022-07-27 2023-07-10 레지스트 패턴의 검사 방법, 레지스트 패턴의 제조 방법, 기판 선별 방법, 및, 반도체 패키지 기판 또는 프린트 배선판의 제조 방법
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JP2011529189A (ja) * 2008-07-24 2011-12-01 マサチューセッツ インスティテュート オブ テクノロジー 吸収を利用して画像形成を行うためのシステム及び方法
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JPH04213372A (ja) * 1990-08-17 1992-08-04 Mitsubishi Rayon Co Ltd 画像形成用樹脂組成物および蛍光検出方式自動外観検査方法
JP2000193596A (ja) * 1998-12-24 2000-07-14 Toshiba Corp 検査方法
JP2003243290A (ja) * 2002-02-15 2003-08-29 Seiko Epson Corp レジストパターンの欠陥検査方法及びその欠陥検査装置
JP2004233054A (ja) * 2003-01-28 2004-08-19 Furoobell:Kk 基板検査装置および方法
JP2011529189A (ja) * 2008-07-24 2011-12-01 マサチューセッツ インスティテュート オブ テクノロジー 吸収を利用して画像形成を行うためのシステム及び方法
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