WO2024018827A1 - 半導体装置および半導体装置アッセンブリ - Google Patents

半導体装置および半導体装置アッセンブリ Download PDF

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Publication number
WO2024018827A1
WO2024018827A1 PCT/JP2023/023347 JP2023023347W WO2024018827A1 WO 2024018827 A1 WO2024018827 A1 WO 2024018827A1 JP 2023023347 W JP2023023347 W JP 2023023347W WO 2024018827 A1 WO2024018827 A1 WO 2024018827A1
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Prior art keywords
lead
semiconductor device
semiconductor
conductive
insulating substrate
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PCT/JP2023/023347
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English (en)
French (fr)
Japanese (ja)
Inventor
昌明 松尾
美久 塚本
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2024534991A priority Critical patent/JPWO2024018827A1/ja
Publication of WO2024018827A1 publication Critical patent/WO2024018827A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present disclosure relates to a semiconductor device and a semiconductor device assembly.
  • Patent Document 1 discloses a conventional semiconductor device.
  • a metal layer made of a metal thin film such as copper foil is arranged on a substrate (insulating substrate) made of an electrically insulating member.
  • the substrate and the metal layer disposed on the substrate are composed of a DBC (Direct Bonded Copper) substrate.
  • DBC Direct Bonded Copper
  • the plurality of switching elements are conductively bonded to the metal layer via a conductive bonding layer such as solder.
  • a thermistor is mounted on the metal layer. The thermistor is placed near the corner of the substrate. In order to prevent the temperature from rising too much due to heat generation of the switching elements, the temperature of the semiconductor device is detected by the thermistor.
  • the metal layer made of copper that constitutes the DBC substrate has a relatively large thickness.
  • a thermistor is mounted on this metal layer, there is a concern that large stress may be generated in the thermistor due to thermal expansion when the switching element generates heat.
  • the thickness of the metal layer is relatively large, so that the sensitivity of temperature detection on the substrate side of the metal layer tends to decrease.
  • An object of the present disclosure is to provide a semiconductor device that is improved over the conventional semiconductor device. Particularly, in view of the above-mentioned circumstances, one object of the present disclosure is to provide a semiconductor device that can appropriately detect the temperature on the substrate side.
  • a semiconductor device provided by a first aspect of the present disclosure includes a support body having a main surface facing one side in the thickness direction and a back surface facing the opposite side to the main surface, and a support body disposed on the main surface.
  • a conductive part made of a conductive material formed on the main surface; a temperature detection element disposed on the conductive part; at least a part of the support;
  • the device includes a semiconductor element, a sealing resin that covers the temperature detection element, and the conductive part.
  • the support body includes an insulating substrate having the main surface.
  • the temperature detection element is bonded to the conductive portion via a first conductive bonding material.
  • the back surface is exposed from the sealing resin.
  • a semiconductor device assembly provided by a second aspect of the present disclosure includes the semiconductor device according to the first aspect of the present disclosure, a cooler having a portion that contacts the back surface, and a cooling means for cooling the cooler. and a control means for controlling the cooling means based on the temperature detected by the temperature detection element.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 5 is a cross-sectional view taken along line VV in FIG. 3.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a sectional view taken along line VII-VII in FIG. 3.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3.
  • FIG. 5 is a cross-sectional view taken along line VV in FIG. 3.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a sectional view taken along line VII-VII in FIG. 3.
  • FIG. 9 is a cross-sectional view of a main part showing a semiconductor device assembly including a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 10 is a block diagram showing the configuration of the semiconductor device assembly shown in FIG. 9.
  • FIG. 11 is a plan view showing a semiconductor device according to a first modification of the first embodiment.
  • FIG. 12 is a plan view showing a semiconductor device according to a second modification of the first embodiment.
  • FIG. 13 is a sectional view taken along line XIII-XIII in FIG. 12.
  • FIG. 14 is a sectional view taken along line XIV-XIV in FIG. 12.
  • FIG. 15 is a sectional view taken along line XV-XV in FIG. 12.
  • FIG. 16 is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 17 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 18 is a bottom view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 19 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 20 is a plan view showing an insulating substrate of a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 19.
  • FIG. 22 is a sectional view of a main part taken along line XXII-XXII in FIG. 19.
  • FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 19.
  • a thing A is formed on a thing B and "a thing A is formed on a thing B” mean “a thing A is formed on a thing B” unless otherwise specified.
  • "something A is placed on something B” and “something A is placed on something B” mean "something A is placed on something B” unless otherwise specified.
  • a certain surface A faces (one side or the other side of) the direction B is not limited to the case where the angle of the surface A with respect to the direction B is 90 degrees; Including cases where it is tilted to the opposite direction.
  • First embodiment: 1 to 8 show a semiconductor device according to a first embodiment of the present disclosure.
  • the semiconductor device A1 of this embodiment includes a plurality of leads 1, a plurality of leads 2, a support body 3, a plurality of semiconductor elements 4, a conductive part 5, a thermistor 6, a plurality of wires 71, 72, 73, 74, and a seal.
  • a stopper resin 8 is provided.
  • FIG. 1 is a perspective view showing a semiconductor device A1.
  • FIG. 2 is a plan view showing the semiconductor device A1.
  • FIG. 3 is a plan view showing the semiconductor device A1, and is a view through the sealing resin 8.
  • FIG. 4 is a bottom view showing the semiconductor device A1.
  • FIG. 5 is a cross-sectional view taken along line VV in FIG. 3.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a sectional view taken along line VII-VII in FIG. 3.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3.
  • the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line).
  • the wire 71 is omitted.
  • the thickness direction (planar view direction) of the support 3 is an example of the "thickness direction” of the present disclosure, and will be referred to as the "thickness direction z.”
  • the direction perpendicular to the thickness direction z is an example of the "first direction” of the present disclosure, and will be referred to as the "first direction x.”
  • a direction perpendicular to the thickness direction z and the first direction x is an example of the "second direction” of the present disclosure, and will be referred to as the "second direction y.”
  • the upper side in the figures is an example of "one side in the second direction" of the present disclosure, and is referred to as the "y1 side of the second direction y”
  • the lower side in the figures is an example of "one side in the second direction” of the present disclosure
  • the lower side in the figures is an example of "one side in the second direction” of the present disclosure, and is referred to as "the y1 side of the second direction y”
  • the lower side in the figures is an example of "one side in the second direction” of the present disclosure, and is referred to as "the y1 side of the second direction y”
  • the upper side of the drawings is an example of “one side in the thickness direction” of the present disclosure, which is referred to as the "z1 side of the thickness direction z", and the lower side of the drawings is an example of "one side in the thickness direction” of the present disclosure. This is an example of "the other side of the z2 side in the thickness direction z".
  • the support body 3 supports a plurality of semiconductor elements 4.
  • the specific structure of the support body 3 is not limited at all, and is formed of, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate.
  • the support body 3 is defined as consisting of an insulating substrate 31 and a metal layer 33.
  • the support 3 has a main surface 3a and a back surface 3b.
  • the main surface 3a faces the z1 side in the thickness direction z.
  • the back surface 3b faces the opposite side to the main surface 3a (the z2 side in the thickness direction z).
  • the DBC substrate or AMB substrate that constitutes the support body 3 includes an insulating substrate 31, a support conductor 32, and a metal layer 33.
  • the thicknesses (dimensions in the thickness direction z) of the insulating substrate 31 including the support body 3, the support conductor 32, and the metal layer 33 are not particularly limited, and are, for example, about 0.4 mm to 3.0 mm.
  • the insulating substrate 31 is made of, for example, ceramic with excellent thermal conductivity. Examples of such ceramics include silicon nitride (SiN) and alumina (Al 2 O 3 ).
  • the insulating substrate 31 is not limited to ceramics, and may be an insulating resin sheet or the like.
  • the shape of the insulating substrate 31 is not particularly limited, and is, for example, rectangular in plan view. In this embodiment, the insulating substrate 31 has an elongated rectangular shape whose longitudinal direction is the first direction x when viewed in the thickness direction z. Insulating substrate 31 has main surface 3a. The main surface 3a is a plane facing the z1 side in the thickness direction z.
  • the thickness of the insulating substrate 31 is not particularly limited, and is, for example, about 0.05 mm to 1.0 mm.
  • the support conductor 32 is formed on the main surface 3a of the insulating substrate 31.
  • the constituent material of the support conductor 32 includes, for example, copper (Cu).
  • the constituent material may include aluminum (Al) other than copper, for example.
  • the support conductor 32 includes a first part 321, a second part 322, a third part 323, a fourth part 324, a fifth part 325, a sixth part 326, a seventh part 327, an eighth part 328, and a ninth part 329.
  • the surfaces of these first portions 321 to ninth portions 329 may be plated with silver (Ag), for example.
  • the first portion 321 is arranged on the main surface 3a of the insulating substrate 31 closer to the x2 side in the first direction x.
  • the first portion 321 supports any one of the plurality of semiconductor elements 4.
  • the second portion 322 is disposed on the x1 side in the first direction x with respect to the first portion 321 and is adjacent to the first portion 321 .
  • the second portion 322 supports any one of the plurality of semiconductor elements 4.
  • the third portion 323 is disposed on the x1 side in the first direction x with respect to the second portion 322 and is adjacent to the second portion 322 .
  • the third portion 323 supports any one of the plurality of semiconductor elements 4.
  • the fourth portion 324 is arranged on the x1 side in the first direction x with respect to the third portion 323 and is adjacent to the third portion 323 .
  • the fourth portion 324 supports any one of the plurality of semiconductor elements 4.
  • the fifth part 325 and the sixth part 326 are arranged near the corner of the insulating substrate 31 on the x2 side in the first direction x and on the y1 side in the second direction y.
  • a wire 73 is bonded to the fifth portion 325 .
  • a wire 72 is bonded to the sixth portion 326 .
  • the seventh portion 327 and the eighth portion 328 are arranged near the corner of the insulating substrate 31 on the x1 side in the first direction x and on the y1 side in the second direction y.
  • the seventh portion 327 and the eighth portion 328 are located on the x1 side in the first direction x with respect to the third portion 323, and are located on the y1 side in the second direction y with respect to the fourth portion 324.
  • a wire 73 is bonded to the seventh portion 327 .
  • the wire 72 is bonded to the eighth portion 328 .
  • the ninth portion 329 is disposed on the insulating substrate 31 closer to the x1 side in the first direction x and closer to the y2 side in the second direction y.
  • a wire 71 is bonded to the ninth portion 329 .
  • the metal layer 33 is bonded to the lower surface of the insulating substrate 31 (the surface facing the z2 side in the thickness direction z).
  • the constituent material of the metal layer 33 is the same as that of the supporting conductor 32.
  • Metal layer 33 has a back surface 3b.
  • the back surface 3b is a plane facing toward the z2 side in the thickness direction z. In this embodiment, the back surface 3b is exposed from the sealing resin 8.
  • a heat dissipating member for example, a heat sink, etc. (not shown) can be attached to the back surface 3b.
  • the conductive part 5 is formed on the main surface 3a of the insulating substrate 31.
  • the conductive part 5 is made of a conductive material.
  • the conductive material constituting the conductive part 5 is not particularly limited. Examples of the conductive material of the conductive portion 5 include materials containing silver (Ag), copper (Cu), gold (Au), and the like. In the following description, a case where the conductive portion 5 contains silver will be described as an example. Note that the conductive portion 5 may contain copper instead of silver, or may contain gold instead of silver or copper. Alternatively, the conductive portion 5 may contain Ag--Pt or Ag--Pd.
  • the method of forming the conductive portion 5 is not limited, and may be formed, for example, by firing a paste containing these metals.
  • the thickness of the conductive portion 5 is not particularly limited, and is, for example, about 5 ⁇ m to 30 ⁇ m. The thickness of the conductive portion 5 is smaller than the thickness of the supporting conductor 32 described above.
  • the conductive part 5 includes two wiring parts 501, as shown in FIG. 3, for example.
  • the two wiring sections 501 are arranged near the corners of the insulating substrate 31 on the x1 side in the first direction x and on the y1 side in the second direction y.
  • the two wiring sections 501 are spaced apart from each other and arranged side by side in the second direction y.
  • Each wiring section 501 has a pad section 502.
  • the pad section 502 is located at the end of the wiring section 501 on the x2 side in the first direction x.
  • Each terminal of the thermistor 6 is connected to the two pad portions 502, respectively.
  • the plurality of leads 1 are configured to include metal, and have higher thermal conductivity than, for example, the insulating substrate 31.
  • the metal forming the lead 1 is not particularly limited, and may be copper, aluminum, iron (Fe), oxygen-free copper, or an alloy thereof (for example, Cu-Sn alloy, Cu-Zr alloy, Cu-Fe alloy, etc.). be.
  • the plurality of leads 1 may be plated with nickel (Ni).
  • Ni nickel
  • the plurality of leads 1 may be formed, for example, by pressing a metal mold against a metal plate, or by patterning a metal plate by etching. Note that the method for forming the plurality of leads 1 is not limited.
  • the thickness of each lead 1 is not particularly limited, and is, for example, about 0.4 mm to 0.8 mm. Each lead 1 is spaced apart from each other.
  • the plurality of leads 1 include leads 11, leads 12, leads 13, leads 14, and leads 15.
  • the leads 11, 12, 13, 14, and 15 constitute a conduction path to the semiconductor element 4, and are located on the y2 side of the sealing resin 8 in the second direction y (the lower side in FIG. 2). ) (resin side surface 86 to be described later).
  • the lead 11 is arranged on the support conductor 32, and in this embodiment, it is arranged on the first part 321. As shown in FIG. 7, the lead 11 is bonded to the first portion 321 via the conductive bonding material 19.
  • the conductive bonding material 19 may be any material that can bond the lead 11 to the first portion 321 and electrically connect the lead 11 and the first portion 321.
  • the structure of the lead 11 is not particularly limited. In this embodiment, as shown in FIGS. 3 and 7, the lead 11 will be explained by dividing it into a connecting end portion 111, a protruding portion 112, an inclined portion 113, and a parallel portion 114.
  • the connecting end portion 111 has a rectangular shape in plan view, and is a portion joined to the first portion 321.
  • the connecting end portion 111 is electrically connected to the end portion of the first portion 321 on the y2 side in the second direction y via the conductive bonding material 19.
  • the inclined portion 113 and the parallel portion 114 are covered with the sealing resin 8.
  • the inclined portion 113 is connected to the connecting end portion 111 and the parallel portion 114, and is inclined with respect to the connecting end portion 111 and the parallel portion 114.
  • the parallel portion 114 is connected to the inclined portion 113 and the protruding portion 112, and is parallel (or approximately parallel) to the connecting end portion 111.
  • the wire 71 is bonded to the parallel portion 144 .
  • the protruding portion 112 is connected to the end of the parallel portion 114 and is a portion of the lead 11 that protrudes from the sealing resin 8 .
  • two protrusions 112 are provided at intervals in the first direction x.
  • Each protrusion 112 protrudes on the side opposite to the connection end 111 in the second direction y.
  • the protrusion 112 is used, for example, to electrically connect the semiconductor device A1 to an external circuit.
  • the protrusion 112 is bent toward the side facing the main surface 3a of the insulating substrate 31 in the thickness direction z.
  • the lead 12 is arranged on the support conductor 32, and in this embodiment, it is arranged on the second part 322.
  • the lead 12 is bonded to the second portion 322 via a conductive bonding material.
  • the structure of the lead 12 is not particularly limited. In this embodiment, as shown in FIG. 3, the lead 12 will be explained by dividing it into a connecting end portion 121, a protruding portion 122, an inclined portion 123, and a parallel portion 124.
  • the connecting end portion 121 has a rectangular shape in plan view, and is a portion joined to the second portion 322.
  • the connecting end portion 121 is conductively bonded to the end portion of the second portion 322 on the y2 side in the second direction y via a conductive bonding material.
  • the inclined portion 123 and the parallel portion 124 are covered with the sealing resin 8.
  • the inclined portion 123 is connected to the connecting end portion 121 and the parallel portion 124, and is inclined with respect to the connecting end portion 121 and the parallel portion 124.
  • the parallel portion 124 is connected to the inclined portion 123 and the protruding portion 122, and is parallel (or approximately parallel) to the connecting end portion 121.
  • the wire 71 is joined to the parallel portion 124 .
  • the protruding portion 122 is connected to the end of the parallel portion 124 and is a portion of the lead 12 that protrudes from the sealing resin 8 .
  • the protrusion 122 protrudes in the second direction y on the side opposite to the connection end 121.
  • the protrusion 122 is used, for example, to electrically connect the semiconductor device A1 to an external circuit.
  • the protrusion 122 is bent toward the side facing the main surface 3a of the insulating substrate 31 in the thickness direction z.
  • the lead 13 is arranged on the support conductor 32, and in this embodiment, it is arranged on the third part 323. As shown in FIG. 6, the lead 13 is bonded to the third portion 323 via the conductive bonding material 19.
  • the structure of the lead 13 is not particularly limited. In this embodiment, as shown in FIGS. 3 and 6, the lead 13 will be described by dividing it into a connecting end portion 131, a protruding portion 132, an inclined portion 133, and a parallel portion 134.
  • the connecting end portion 131 has a rectangular shape in plan view, and is a portion joined to the third portion 323.
  • the connecting end portion 131 is electrically connected to the end portion of the third portion 323 on the y2 side in the second direction y via the conductive bonding material 19.
  • the inclined portion 133 and the parallel portion 134 are covered with the sealing resin 8.
  • the inclined portion 133 is connected to the connecting end portion 131 and the parallel portion 134, and is inclined with respect to the connecting end portion 131 and the parallel portion 134.
  • the parallel portion 134 is connected to the inclined portion 133 and the protruding portion 132, and is parallel (or approximately parallel) to the connecting end portion 131.
  • the wire 71 is joined to the parallel portion 134 .
  • the protruding portion 132 is connected to the end of the parallel portion 124 and is a portion of the lead 13 that protrudes from the sealing resin 8 .
  • the protrusion 132 protrudes in the second direction y on the side opposite to the connection end 131.
  • the protrusion 132 is used, for example, to electrically connect the semiconductor device A1 to an external circuit.
  • the protrusion 132 is bent toward the side facing the main surface 3a of the insulating substrate 31 in the thickness direction z.
  • the lead 14 is arranged on the support conductor 32, and in this embodiment, it is arranged on the fourth part 324.
  • the lead 14 is bonded to the fourth portion 324 via a conductive bonding material.
  • the structure of the lead 14 is not particularly limited. In this embodiment, as shown in FIG. 3, the lead 14 will be explained by dividing it into a connecting end portion 141, a protruding portion 142, an inclined portion 143, and a parallel portion 144.
  • the connecting end portion 141 has a rectangular shape in plan view, and is a portion joined to the fourth portion 324.
  • the connection end portion 141 is conductively bonded to the end portion of the fourth portion 324 on the y2 side in the second direction y via a conductive bonding material.
  • the inclined portion 143 and the parallel portion 144 are covered with the sealing resin 8.
  • the inclined portion 143 is connected to the connecting end portion 141 and the parallel portion 144 and is inclined with respect to the connecting end portion 141 and the parallel portion 144 .
  • the parallel portion 144 is connected to the inclined portion 133 and the protruding portion 142 and is parallel (or approximately parallel) to the connecting end portion 141 .
  • the wire 71 is bonded to the parallel portion 144 .
  • the protruding portion 142 is connected to the end of the parallel portion 144 and is a portion of the lead 14 that protrudes from the sealing resin 8 .
  • the protrusion 142 protrudes in the second direction y on the side opposite to the connection end 141.
  • the protrusion 142 is used, for example, to electrically connect the semiconductor device A1 to an external circuit.
  • the protrusion 142 is bent toward the side facing the main surface 3a of the insulating substrate 31 in the thickness direction z.
  • the leads 15 are not placed on the support conductor 32 but are supported by the sealing resin 8.
  • the lead 15 does not include a portion corresponding to the connecting end portion 131 and the inclined portion 133 of the lead 13. Note that the configuration of the lead 15 is not limited to this. In this embodiment, as shown in FIG. 3, the lead 13 will be explained by dividing it into a protruding part 132 and a parallel part 154.
  • the parallel portion 154 is covered with the sealing resin 8.
  • the parallel portion 154 is parallel (or substantially parallel) to the support conductor 32 .
  • the wire 71 is bonded to the parallel portion 154 .
  • the protruding portion 152 is connected to the end of the parallel portion 154 and is a portion of the lead 15 that protrudes from the sealing resin 8 .
  • the protruding portion 152 protrudes from the sealing resin 8 toward the y2 side in the second direction y.
  • the protrusion 152 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the protrusion 152 is bent toward the side facing the main surface 3a of the insulating substrate 31 in the thickness direction z.
  • the plurality of leads 2 are configured to include metal, and have higher thermal conductivity than, for example, the insulating substrate 31.
  • the metal forming the lead 2 is not particularly limited, and may be copper, aluminum, iron (Fe), oxygen-free copper, or an alloy thereof (for example, Cu-Sn alloy, Cu-Zr alloy, Cu-Fe alloy, etc.). be.
  • the plurality of leads 2 may be plated with nickel (Ni).
  • the plurality of leads 2 may be formed, for example, by pressing a metal mold against a metal plate, or by patterning a metal plate by etching. Note that the method for forming the plurality of leads 2 is not limited.
  • the thickness of each lead 2 is not particularly limited, and is, for example, about 0.4 mm to 0.8 mm. Each lead 2 is spaced apart from each other.
  • the multiple leads 2 include multiple leads 21, multiple leads 22, and two leads 23.
  • the leads 21 and 22 constitute a conduction path to a source electrode 43 and a gate electrode 44, which will be described later, of the semiconductor element 4, and are connected to the y1 side of the sealing resin 8 in the second direction y (the upper side in FIG. 2). ) (resin side surface 85 to be described later).
  • the two leads 23 constitute a conductive path to the thermistor 6, and protrude from the side surface of the sealing resin 8 facing the y1 side in the second direction y.
  • the plurality of leads 21 are not arranged on the support conductor 32, but are supported by the sealing resin 8.
  • the plurality of leads 21 are arranged at intervals in the first direction x.
  • the structure of the lead 21 is not particularly limited. In this embodiment, as shown in FIGS. 3 and 6, the lead 21 will be divided into a protruding portion 212 and a parallel portion 214.
  • the parallel portion 214 is covered with the sealing resin 8.
  • the parallel portion 214 is parallel (or substantially parallel) to the support conductor 32 .
  • a wire 73 is bonded to the parallel portion 214 .
  • the protruding portion 212 is connected to the end of the parallel portion 214 and is a portion of the lead 21 that protrudes from the sealing resin 8 .
  • the protruding portion 212 protrudes from the sealing resin 8 toward the y1 side in the second direction y.
  • the protrusion 212 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the protrusion 212 is bent toward the side facing the main surface 3a of the insulating substrate 31 in the thickness direction z.
  • the plurality of leads 22 are not arranged on the support conductor 32, but are supported by the sealing resin 8.
  • the plurality of leads 22 are arranged at intervals in the first direction x.
  • Each of the plurality of leads 22 is arranged in close proximity to form a pair with one of the plurality of leads 21.
  • the structure of the lead 22 is not particularly limited. In this embodiment, as shown in FIGS. 3 and 6, the lead 22 will be explained by dividing it into a protruding portion 222 and a parallel portion 224.
  • the parallel portion 224 is covered with the sealing resin 8.
  • the parallel portion 224 is parallel (or substantially parallel) to the support conductor 32 .
  • a wire 72 is bonded to the parallel portion 224 .
  • the protruding portion 222 is connected to the end of the parallel portion 224 and is a portion of the lead 22 that protrudes from the sealing resin 8 .
  • the protrusion 222 protrudes from the sealing resin 8 toward the y1 side in the second direction y.
  • the protrusion 222 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the protrusion 222 is bent toward the side facing the main surface 3a of the insulating substrate 31 in the thickness direction z.
  • the two leads 23 are not placed on the supporting conductor 32, but are supported by the sealing resin 8.
  • the two leads 23 are arranged side by side in the first direction x.
  • the structure of the lead 23 is not particularly limited. In this embodiment, as shown in FIGS. 3 and 5, the lead 23 will be explained by dividing it into a protruding part 232 and a parallel part 234.
  • the parallel portion 234 is covered with the sealing resin 8.
  • the parallel portion 234 is parallel (or substantially parallel) to the support conductor 32 .
  • a wire 74 is bonded to the parallel portion 234 .
  • the protruding portion 232 is connected to the end of the parallel portion 234 and is a portion of the lead 23 that protrudes from the sealing resin 8 .
  • the protruding portion 232 protrudes from the sealing resin 8 toward the y1 side in the second direction y.
  • the protrusion 232 is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the protrusion 232 is bent toward the side facing the main surface 3a of the insulating substrate 31 in the thickness direction z.
  • Each of the plurality of semiconductor elements 4 is an electronic component that becomes the functional center of the semiconductor device A1, and in this embodiment, is a switching element.
  • the plurality of semiconductor elements 4 are arranged on the main surface 3a of the insulating substrate 31.
  • Each of the plurality of semiconductor elements 4 is supported by one of the first to fourth parts 321 to 324 of the support conductor 32.
  • the plurality of semiconductor elements 4 include semiconductor elements 40A to 40F. Further, in the illustrated example, six semiconductor elements 40A to 40F are provided, but this is just an example, and the number of semiconductor elements 4 is not limited at all.
  • the semiconductor element 4 (each of the semiconductor elements 40A to 40F) is, for example, a MOSFET (SiC MOSFET (metal-oxide-semiconductor field-effect transistor)) made of a SiC (silicon carbide) substrate.
  • MOSFET SiC MOSFET (metal-oxide-semiconductor field-effect transistor)
  • SiC silicon carbide
  • the semiconductor element 4 may be a MOSFET made of a Si (silicon) substrate instead of the SiC substrate, and may include, for example, an IGBT element.
  • a MOSFET containing GaN gallium nitride
  • the semiconductor element 4 has a rectangular plate shape in plan view, and includes an element main surface 41, an element rear surface 42, a source electrode 43, a gate electrode 44, and a drain electrode 45.
  • the element main surface 41 and the element back surface 42 face opposite sides in the thickness direction z.
  • the element main surface 41 is a surface facing the z1 side in the thickness direction z.
  • the element back surface 42 is a surface facing the z2 side in the thickness direction z.
  • a source electrode 43 and a gate electrode 44 are arranged on the main surface 41 of the element.
  • a drain electrode 45 is arranged on the back surface 42 of the element, as shown in FIGS. 5 to 7.
  • the shapes and arrangement of the source electrode 43, gate electrode 44, and drain electrode 45 are not limited.
  • the source electrode 43 is larger than the gate electrode 44 when viewed in the thickness direction z.
  • the source electrode 43 is composed of two separate regions when viewed in the thickness direction z.
  • the semiconductor elements 40A, 40B, and 40C are arranged on the first part 321, as shown in FIGS. 3, 7, and 8. As shown in FIGS. 7 and 8, the semiconductor elements 40A, 40B, and 40C are bonded to the first part 321 using a conductive bonding material 47, with the back surface 42 of the semiconductor elements facing the first part 321. Thereby, the drain electrodes 45 of each of the semiconductor elements 40A, 40B, and 40C are electrically connected to the first portion 321 by the conductive bonding material 47.
  • the conductive bonding material 47 for example, silver paste, copper paste, solder, or the like is used.
  • the source electrode 43 of the semiconductor element 40A is electrically connected to the lead 12 by a wire 71.
  • the source electrode 43 of the semiconductor element 40B is conductively connected to the lead 13 by a wire 71.
  • the source electrode 43 of the semiconductor element 40C is conductively connected to the lead 14 by a wire 71.
  • the wire 71 is made of aluminum (Al) or copper (Cu), for example. Note that the material, wire diameter, and number of wires 71 are not limited.
  • the semiconductor element 40D is arranged on the second part 322, as shown in FIG.
  • the semiconductor element 40E is bonded to the second part 322 with a conductive bonding material (not shown) with the back surface 42 of the element facing the second part 322.
  • the drain electrode 45 of the semiconductor element 40D is electrically connected to the second portion 322 by the conductive bonding material.
  • the source electrode 43 of the semiconductor element 40D is conductively connected to the lead 15 by a wire 71.
  • the wire 71 has one end joined to the source electrode 43 of the semiconductor element 40D, an intermediate part joined to the ninth part 329, and the other end joined to the lead 15.
  • the semiconductor element 40E is arranged on the third portion 323, as shown in FIGS. 3, 6, and 8. As shown in FIGS. 6 and 8, the semiconductor element 40E is bonded to the third part 323 with the conductive bonding material 47 with the back surface 42 of the element facing the third part 323. Thereby, the drain electrode 45 of the semiconductor element 40E is electrically connected to the third portion 323 by the conductive bonding material 47. As shown in FIG. 3, the source electrode 43 of the semiconductor element 40E is electrically connected to the lead 15 by a wire 71. As shown in FIG.
  • the semiconductor element 40F is arranged on the fourth part 324, as shown in FIGS. 3 and 5. As shown in FIG. 5, the semiconductor element 40F is bonded to the fourth part 324 with a conductive bonding material 47 with the back surface 42 of the element facing the fourth part 324. Thereby, the drain electrode 45 of the semiconductor element 40F is electrically connected to the fourth portion 324 by the conductive bonding material 47. As shown in FIG. 3, the source electrode 43 of the semiconductor element 40F is electrically connected to the lead 15 by a wire 71. As shown in FIG.
  • the gate electrode 44 of the semiconductor element 40A is connected to the sixth part 326 by the wire 72, and the sixth part 326 is connected to the lead 22 by the wire 72.
  • the gate electrode 44 of the semiconductor element 40A is conductively connected to the lead 22 by the wire 72 and the sixth portion 326.
  • the lead 22 electrically connected to the gate electrode 44 of the semiconductor element 40A is a terminal (gate terminal) for inputting a drive signal to the semiconductor element 40A.
  • the source electrode 43 of the semiconductor element 40A is connected to the fifth part 325 by the wire 73, and the fifth part 325 is connected to the lead 21 by the wire 73.
  • the source electrode 43 of the semiconductor element 40A is conductively connected to the lead 21 by the wire 73 and the fifth portion 325.
  • the lead 22 electrically connected to the source electrode 43 of the semiconductor element 40A is a source signal detection terminal (source sense terminal) of the semiconductor element 40A.
  • the wires 72 and 73 are made of, for example, gold (Au), silver (Ag), copper (Cu), aluminum (Al), or the like. Note that the material, wire diameter, and number of wires 72 and 73 are not limited.
  • the gate electrode 44 of the semiconductor element 40B is conductively connected to the lead 22 by a wire 72.
  • the lead 22 electrically connected to the gate electrode 44 of the semiconductor element 40B is the gate terminal of the semiconductor element 40B.
  • the source electrode 43 of the semiconductor element 40B is conductively connected to the lead 21 by a wire 73.
  • the lead 21 electrically connected to the source electrode 43 of the semiconductor element 40B is a source sense terminal of the semiconductor element 40B.
  • the gate electrode 44 of the semiconductor element 40C is conductively connected to the lead 22 by a wire 72.
  • the lead 22 electrically connected to the gate electrode 44 of the semiconductor element 40C is the gate terminal of the semiconductor element 40C.
  • the source electrode 43 of the semiconductor element 40C is conductively connected to the lead 21 by a wire 73.
  • the lead 21 electrically connected to the source electrode 43 of the semiconductor element 40C is a source sense terminal of the semiconductor element 40C.
  • the gate electrode 44 of the semiconductor element 40D is conductively connected to the lead 22 by a wire 72.
  • the lead 22 electrically connected to the gate electrode 44 of the semiconductor element 40D is a gate terminal of the semiconductor element 40D.
  • the source electrode 43 of the semiconductor element 40D is conductively connected to the lead 21 by a wire 73.
  • the lead 21 electrically connected to the source electrode 43 of the semiconductor element 40D is a source sense terminal of the semiconductor element 40D.
  • the gate electrode 44 of the semiconductor element 40E is conductively connected to the lead 22 by a wire 72.
  • the lead 22 electrically connected to the gate electrode 44 of the semiconductor element 40E is a gate terminal of the semiconductor element 40E.
  • the source electrode 43 of the semiconductor element 40E is conductively connected to the lead 21 by a wire 73.
  • the lead 21 electrically connected to the source electrode 43 of the semiconductor element 40E is a source sense terminal of the semiconductor element 40E.
  • the gate electrode 44 of the semiconductor element 40F is conductively connected to the lead 22 by a wire 72.
  • one end of the wire 72 is joined to the gate electrode 44 of the semiconductor element 40F
  • the middle part is joined to the eighth part 328, and the other end is joined to the lead 22.
  • the lead 22 electrically connected to the gate electrode 44 of the semiconductor element 40F is a gate terminal of the semiconductor element 40F.
  • the source electrode 43 of the semiconductor element 40F is conductively connected to the lead 21 by a wire 73.
  • one end of the wire 73 is joined to the source electrode 43 of the semiconductor element 40F, the middle part is joined to the seventh part 327, and the other end is joined to the lead 21.
  • the lead 21 electrically connected to the source electrode 43 of the semiconductor element 40F is a source sense terminal of the semiconductor element 40F.
  • the semiconductor device A1 is configured, for example, as a half-bridge switching circuit.
  • leads 12, 13, and 14 are electrically connected externally
  • semiconductor elements 40A, 40B, and 40C constitute an upper arm circuit of semiconductor device A1
  • semiconductor elements 40D, 40E, and 40F constitute an upper arm circuit of semiconductor device A1.
  • semiconductor elements 40A, 40B, and 40C are connected in parallel with each other, and in the lower arm circuit, semiconductor elements 40D, 40E, and 40F are connected in parallel with each other.
  • Each semiconductor element 40A, 40B, 40C and each semiconductor element 40D, 40E, 40F are connected in series and constitute a bridge layer.
  • a DC voltage to be subjected to power conversion is input to the lead 11 and the lead 15.
  • Lead 11 is a positive electrode (P terminal)
  • lead 15 is a negative electrode (N terminal).
  • the leads 12, 13, and 14 output AC voltages that have been converted into power by the semiconductor elements 40A to 40F.
  • the plurality of semiconductor elements 4 are arranged side by side in the first direction x.
  • the semiconductor element 40A is located at the end on the x2 side in the first direction x
  • the semiconductor element 40F is located at the end on the x1 side in the first direction x
  • the semiconductor elements 40A to 40F are located at the end on the x2 side in the first direction They are arranged in this order toward the x1 side in one direction x.
  • the semiconductor elements 40A to 40F are arranged at regular intervals in the first direction x.
  • the semiconductor elements 40A to 40F include semiconductor elements that are not arranged along the first direction x but are located at different positions in the second direction y.
  • the semiconductor element 40B is located on the y1 side of the second direction y with respect to the semiconductor element 40A in the second direction y.
  • the semiconductor element 40C is located on the y1 side in the second direction y with respect to the semiconductor element 40B.
  • the semiconductor element 40D is at the same (or substantially the same) position as the semiconductor element 40C in the second direction y.
  • the semiconductor element 40E is located on the y2 side of the second direction y with respect to the semiconductor element 40D.
  • the semiconductor element 40F is located on the y2 side in the second direction y with respect to the semiconductor element 40E.
  • the thermistor 6 is a temperature detection element and is mounted on the main surface 3a of the insulating substrate 31.
  • the thermistor 6 is a resistor whose electrical resistance changes largely with respect to temperature changes, and the voltage between the terminals changes as the resistance value changes depending on the ambient temperature. Based on the voltage between the terminals of the thermistor 6, the temperature around the thermistor 6 is detected. Note that the characteristics of the thermistor 6 are not limited.
  • the thermistor 6 may be an NTC (negative temperature coefficient) thermistor, a PTC (positive temperature coefficient) thermistor, or a thermistor having other characteristics.
  • the thermistor 6 is for detecting the temperature of the semiconductor device A1. As shown in FIGS. 3 and 5, the thermistor 6 is arranged across two pad sections 502 of the conductive section 5 (wiring section 501). The thermistor 6 is bonded to the pad portion 502 via a conductive bonding material 63.
  • the conductive bonding material 63 may be any material that can bond the thermistor 6 to the pad portion 502 and electrically connect the thermistor 6 and the pad portion 502. As the conductive bonding material 63, for example, silver paste, copper paste, solder, or the like is used.
  • the conductive bonding material 63 is an example of the "first conductive bonding material" of the present disclosure.
  • Each of the two pad sections 502 (wiring section 501) is electrically connected to the lead 23 via a wire 74.
  • the pad portion 502 (wiring portion 501) and the wire 74 are a conduction path that connects the thermistor 6 and the lead 23.
  • the two leads 23 serve as terminals for detecting the temperature of the semiconductor device A1, and output the voltage between the terminals of the thermistor 6.
  • the semiconductor device A1 includes an insulating member 62.
  • the insulating member 62 is interposed between the main surface 3a of the insulating substrate 31 and the thermistor 6, and has electrical insulation properties.
  • the insulating member 62 is an underfill filled between the main surface 3a and the thermistor 6 in the thickness direction z.
  • the constituent material of the insulating member 62 is not particularly limited, and is, for example, a synthetic resin whose main ingredient is black epoxy resin.
  • the thermistor 6 is placed close to any one of the plurality of semiconductor elements 4 (semiconductor elements 40A to 40F). As shown in FIG. 3, the thermistor 6 is arranged near a corner of the insulating substrate 31 on the x1 side in the first direction x and on the y1 side in the second direction y. In the illustrated example, the thermistor 6 is closest to the semiconductor element 40F located at the end on the x1 side in the first direction x among the semiconductor elements 40A to 40F.
  • the semiconductor device A1 may include another temperature detection element instead of the thermistor 6.
  • Other possible temperature detection elements include semiconductor temperature sensors.
  • the semiconductor temperature sensor is a Si diode or the like whose forward voltage changes greatly with respect to temperature changes, and the ambient temperature is detected based on the voltage between terminals when a predetermined current is passed through the semiconductor temperature sensor.
  • the sealing resin 8 covers at least the semiconductor elements 40A to 40F, the conductive portion 5, the thermistor 6, the wires 71 to 74, a portion of each of the plurality of leads 1 and the plurality of leads 2, and a portion of the support 3. ing.
  • the constituent material of the sealing resin 8 is not particularly limited, and insulating materials such as epoxy resin and silicone gel may be used as appropriate.
  • the sealing resin 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 83 to 86.
  • the resin main surface 81 and the resin back surface 82 are surfaces facing opposite to each other in the thickness direction z, and are both flat surfaces perpendicular to the thickness direction z.
  • the main resin surface 81 faces the z1 side in the thickness direction z
  • the resin back surface 82 faces the z2 side in the thickness direction z.
  • the resin back surface 82 has a frame shape that surrounds the back surface 3b of the support 3 (metal layer 33) in plan view.
  • the back surface 3b of the support body 3 is exposed from the resin back surface 82 of the sealing resin 8, and is flush with the resin back surface 82, for example. Note that the back surface 3b of the support body 3 may protrude further toward the z2 side in the thickness direction z than the resin back surface 82 of the sealing resin 8.
  • Each of the plurality of resin side surfaces 83 to 86 is connected to both the resin main surface 81 and the resin rear surface 82, and is sandwiched between them in the thickness direction z.
  • the resin side surface 83 and the resin side surface 84 are separated from each other in the first direction x.
  • the resin side surface 83 faces the x1 side in the first direction x
  • the resin side surface 84 faces the x2 side in the first direction x.
  • the resin side surface 85 and the resin side surface 86 are separated from each other in the second direction y.
  • the resin side surface 85 faces the y1 side in the second direction y
  • the resin side surface 86 faces the y2 side in the second direction y.
  • each of the plurality of leads 2 protrudes from the resin side surface 85.
  • a portion of each of the plurality of leads 1 protrudes from the resin side surface 86.
  • the sealing resin 8 has a recessed portion recessed from each of the resin side surfaces 83 to 86.
  • the semiconductor device A1 includes a support 3, a semiconductor element 4 (semiconductor elements 40A to 40F), a conductive part 5 made of a conductive material, a thermistor 6, and a sealing resin 8.
  • the support body 3 includes an insulating substrate 31 having a main surface 3a, and the conductive part 5 is formed on the main surface 3a.
  • the thermistor 6 is bonded to the conductive portion 5 (pad portion 502 of the wiring portion 501) via a conductive bonding material 63. According to such a configuration, the thermistor 6 is mounted on the main surface 3a of the support 3 via the conductive portion 5 (pad portion 502 of the wiring portion 501).
  • the conductive portion 5 can be made thinner than the support conductor 32 on which the semiconductor element 4 is mounted, and thereby the stress generated in the thermistor 6 when the semiconductor element 4 generates heat can be reduced. As a result, it is possible to improve the durability of the thermistor 6 and to appropriately detect the temperature of the semiconductor device A1. Further, in the configuration in which the thermistor 6 is mounted on the conductive part 5, the sensitivity of temperature detection on the insulating substrate 31 side can be improved compared to, for example, a case in which the thermistor 6 is disposed on the support conductor 32 having a large thickness. Can be done. Further, the back surface 3b of the support body 3 (metal layer 33) is exposed from the sealing resin 8. According to such a configuration, the heat transmitted from the semiconductor element 4 to the support body 3 (insulating substrate 31) can be efficiently released to the outside from the back surface 3b, and the heat dissipation performance of the semiconductor device A1 is improved.
  • the thermistor 6 is placed close to any one of the plurality of semiconductor elements 4 (semiconductor elements 40A to 40F). According to such a configuration, the temperature of the semiconductor device A1 (insulating substrate 31 side) due to the influence of heat generation of the plurality of semiconductor elements 4 as a whole can be appropriately detected.
  • the thermistor 6 is disposed near the corner of the insulating substrate 31 on the x1 side in the first direction x and on the y1 side in the second direction y, and is located near the corner of the insulating substrate 31 on the x1 side in the first direction x. It is closest to the semiconductor element 40F located at . According to such a configuration, the thermistor 6 can be efficiently arranged on the insulating substrate 31.
  • the semiconductor device A1 of this embodiment includes an insulating member 62.
  • the insulating member 62 is filled between the main surface 3a of the insulating substrate 31 and the thermistor 6. According to such a configuration, after the sealing resin 8 is formed, it is possible to prevent the inconvenience that a gap is generated in a relatively narrow gap between the main surface 3a and the thermistor 6. Thereby, the temperature of the semiconductor device A1 (insulating substrate 31 side) can be detected stably and accurately by the thermistor 6.
  • FIG. 9 and 10 show a semiconductor device assembly B1 including a semiconductor device A1.
  • FIG. 9 is a cross-sectional view of the main parts of the semiconductor device assembly B1.
  • FIG. 10 is a block diagram showing the configuration of semiconductor device assembly B1.
  • the semiconductor device assembly B1 includes a semiconductor device A1, a cooler 91, a mounting member 92, a control means 94, a cooling means 95, and a heating means 96.
  • the cooler 91 is a heat radiating member for cooling the semiconductor device A1.
  • the cooler 91 is made of a metal material with excellent thermal conductivity.
  • the constituent material of the cooler 91 is not particularly limited, and is, for example, aluminum (Al), copper (Cu), or an alloy thereof.
  • Cooler 91 has a mounting surface 911 and a flow path 912.
  • the attachment surface 911 is a flat surface facing the z1 side in the thickness direction z.
  • the flow path 912 is a hollow portion formed inside the cooler 91. For example, cooling water as a refrigerant flows through this flow path 912 .
  • the semiconductor device A1 is placed on a mounting surface 911 of the cooler 91, and the mounting surface 911 is in surface contact with the back surface 3b of the support body 3 of the semiconductor device A1 and the resin back surface 82 of the sealing resin 8.
  • the mounting member 92 is for holding the semiconductor device A1 on the cooler 91.
  • the attachment member 92 is arranged across the semiconductor device A1 in the second direction y.
  • the attachment member 92 is, for example, a leaf spring. Attachment member 92 is located.
  • the attachment member 92 is attached to the cooler 91 by inserting two fastening members 93 into two attachment holes 913 located on both sides of the semiconductor device A1 in the second direction y.
  • the two fastening members 93 are, for example, bolts.
  • the semiconductor device A1 In the state where the semiconductor device A1 is mounted in pressure contact, the semiconductor device A1 is pressed against the cooler 91 by the spring elastic force of the mounting member 92, and the mounting surface 911 of the cooler 91 and the back surface 3b of the support body 3 of the semiconductor device A1 are It's in close contact.
  • the cooling means 95 cools the cooler 91.
  • the cooling means 95 includes, for example, a cooling water supply source (not shown) and a valve that can be switched on and off. For example, when the cooler 91 is cooled by the cooling means 95, the valve is opened and the cooling water sent from the cooling water supply source flows through the flow path 912. Furthermore, when stopping the cooling of the cooler 91, the valve is closed, and the flow of cooling water in the flow path 912 is stopped. Note that the cooling means 95 only needs to be capable of cooling the cooler 91, and the specific configuration of the cooling means 95 is not limited at all.
  • the heating means 96 heats the cooler 91.
  • the heating means 96 includes, for example, a heater (not shown) attached to the cooler 91. For example, when heating the cooler 91 by the heating means 96, the heater is activated. Note that the heating means 96 only needs to be capable of heating the cooler 91, and the specific configuration of the heating means 96 is not limited at all.
  • the control means 94 controls the cooling means 95 and the heating means 96 based on the temperature detected by the thermistor 6 of the semiconductor device A1. For example, when the temperature detected by the thermistor 6 exceeds a predetermined first temperature, the control means 94 operates the cooling means 95 to cool the cooler 91 . Further, when the temperature detected by the thermistor 6 is lower than a predetermined second temperature (a temperature lower than the first temperature), the heating means 96 is activated to heat the cooler 91. Note that the specific method of controlling the cooling means 95 and the heating means 96 by the control means 94 is not limited at all.
  • the semiconductor device assembly B1 of this embodiment includes a semiconductor device A1, a cooler 91, a cooling means 95 for cooling the cooler 91, and a control means 94.
  • the cooler 91 has a portion (mounting surface 911) that contacts the back surface 3b of the support 3 of the semiconductor device A1, and the control means 94 controls the cooling means 95 based on the temperature detected by the thermistor 6. . According to such a configuration, it is possible to prevent an excessive temperature rise of the semiconductor device A1 while monitoring the temperature of the semiconductor device A1, and it is possible to appropriately drive the semiconductor device A1.
  • the semiconductor device assembly B1 includes a heating means 96 that heats the cooler 91, and the control means 94 controls the heating means 96 based on the temperature detected by the thermistor 6.
  • the semiconductor device A1 when the semiconductor device A1 is installed in, for example, automobile equipment, the temperature of the semiconductor device A1 can be monitored and an excessive drop in temperature of the semiconductor device A1 can be prevented when the semiconductor device A1 is used in a cold region or the like. Therefore, the semiconductor device A1 can be appropriately driven.
  • FIG. 11 shows a semiconductor device according to a first modification of the first embodiment.
  • FIG. 11 is a plan view showing the semiconductor device A11 of this modification, and shows the sealing resin 8 with imaginary lines.
  • the same or similar elements as in the semiconductor device A1 of the above embodiment are given the same reference numerals as in the above embodiment, and the description thereof will be omitted as appropriate.
  • the configurations of the respective parts in the modifications shown in FIG. 11 and subsequent examples can be appropriately combined with each other within a range that does not cause technical contradiction.
  • the semiconductor device A11 of this modification differs from the semiconductor device A1 of the above embodiment mainly in the arrangement of the plurality of semiconductor elements 4.
  • the size of the support 3, the arrangement of the plurality of leads, and the arrangement of the plurality of leads 2 are the same (or substantially the same) as in the semiconductor device A1 of the above embodiment.
  • the size of the semiconductor element 4 is larger than that of the semiconductor device A1 described above. Accordingly, the arrangement of the supporting conductor 32 (first part 321 to ninth part 329) on the insulating substrate 31 and the arrangement of the plurality of semiconductor elements 4 (semiconductor elements 40A to 40F) are different from the above embodiment. .
  • the plurality of semiconductor elements 4 are arranged side by side in the first direction x.
  • the semiconductor element 40B is located on the y1 side of the second direction y with respect to the semiconductor element 40A in the second direction y.
  • the semiconductor element 40B overlaps the semiconductor element 40A when viewed in the second direction y.
  • the four semiconductor elements 40B to 40E are arranged at regular intervals along the first direction x.
  • the semiconductor element 40F is located on the y2 side of the second direction y with respect to the semiconductor element 40E.
  • the semiconductor element 40F overlaps the semiconductor element 40E when viewed in the second direction y.
  • the thermistor 6 is arranged near the corner of the insulating substrate 31 on the x1 side in the first direction x and on the y1 side in the second direction y, similarly to the semiconductor device A1 of the above embodiment.
  • the thermistor 6 includes a semiconductor element 40F located at the end on the x1 side in the first direction x, and a semiconductor element 40E located closest to the semiconductor element 40F on the x2 side in the first direction x. are arranged correspondingly.
  • the thermistor 6 is closest to the semiconductor element 40E among the semiconductor elements 40A to 40F.
  • the thermistor 6 is arranged in a region R1 that overlaps the semiconductor element 40F when viewed in the second direction y and overlaps the semiconductor element 40E when viewed in the first direction x.
  • the semiconductor element 40F is an example of the "first semiconductor element” of the present disclosure
  • the semiconductor element 40E is an example of the "second semiconductor element” of the present disclosure.
  • the semiconductor device A11 of this modification includes a support 3, a semiconductor element 4 (semiconductor elements 40A to 40F), a conductive part 5 made of a conductive material, a thermistor 6, and a sealing resin 8.
  • the support body 3 includes an insulating substrate 31 having a main surface 3a, and the conductive part 5 is formed on the main surface 3a.
  • the thermistor 6 is bonded to the conductive portion 5 (pad portion 502 of the wiring portion 501) via a conductive bonding material 63. According to such a configuration, the thermistor 6 is mounted on the main surface 3a of the support 3 via the conductive portion 5 (pad portion 502 of the wiring portion 501).
  • the conductive portion 5 can be made thinner than the support conductor 32 on which the semiconductor element 4 is mounted, and thereby the stress generated in the thermistor 6 when the semiconductor element 4 generates heat can be reduced. As a result, it is possible to improve the durability of the thermistor 6 and to appropriately detect the temperature of the semiconductor device A11. Further, in the configuration in which the thermistor 6 is mounted on the conductive part 5, the sensitivity of temperature detection on the insulating substrate 31 side can be improved compared to, for example, a case in which the thermistor 6 is disposed on the support conductor 32 having a large thickness. Can be done. Further, the back surface 3b of the support body 3 (metal layer 33) is exposed from the sealing resin 8. According to such a configuration, the heat transmitted from the semiconductor element 4 to the support body 3 (insulating substrate 31) can be efficiently released to the outside from the back surface 3b, and the heat dissipation performance of the semiconductor device A11 is improved.
  • the thermistor 6 is placed close to any one of the plurality of semiconductor elements 4 (semiconductor elements 40A to 40F). According to such a configuration, the temperature of the semiconductor device A11 (insulating substrate 31 side) due to the influence of heat generation of the plurality of semiconductor elements 4 as a whole can be appropriately detected.
  • the thermistor 6 is disposed near a corner of the insulating substrate 31 on the x1 side in the first direction x and on the y1 side in the second direction y, and includes a semiconductor element 40F located at an end on the x1 side in the first direction x;
  • the semiconductor element 40E is arranged to correspond to the semiconductor element 40E located closest to the semiconductor element 40F on the x2 side in the first direction x.
  • the thermistor 6 is arranged in a region R1 that overlaps the semiconductor element 40F when viewed in the second direction y and overlaps the semiconductor element 40E when viewed in the first direction x. According to such a configuration, the thermistor 6 can be efficiently arranged in the limited space on the insulating substrate 30.
  • the semiconductor device A11 has the same effects as the semiconductor device A1 of the above embodiment.
  • a cooler 91, a mounting member 92, a control means 94, a cooling means 95, a heating means 96, etc. are further provided. It is possible to employ a configuration of a semiconductor device assembly including the following. In this case, the same effects as described above regarding the semiconductor device assembly B1 are achieved.
  • Second modification of the first embodiment 12 to 15 show a semiconductor device according to a second modification of the first embodiment.
  • the semiconductor device A12 of this modification includes a plurality of leads 1 (leads 11 to 15), a plurality of leads 2 (a plurality of leads 21, a plurality of leads 22, and two leads 23), an insulating substrate 30, and a plurality of semiconductor elements. 4 (semiconductor elements 40A to 40F), a conductive part 5, a plurality of bonding parts 511 to 514, a thermistor 6, a plurality of wires 71 and 72, and a sealing resin 8.
  • FIG. 12 is a plan view showing the semiconductor device A12 of this modification, and is a view through the sealing resin 8. As shown in FIG. FIG.
  • FIG. 13 is a sectional view taken along line XIII-XIII in FIG. 12.
  • FIG. 14 is a sectional view taken along line XIV-XIV in FIG. 12.
  • FIG. 15 is a sectional view taken along line XV-XV in FIG. 12.
  • the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line).
  • the wire 71 is omitted.
  • the wires 72 and 73 are omitted.
  • the semiconductor device A12 of this modification mainly includes an insulating substrate 30 instead of the support 3 of the above embodiment, a plurality of leads 1 (leads 11 to 15), a plurality of leads 2 (a plurality of leads 21, The structure of each part of the plurality of leads 22 and two leads 23), the arrangement of the plurality of semiconductor elements 4 (semiconductor elements 40A to 40F), and the structure of the conductive part 5 are different from the above embodiment.
  • Insulating substrate 30 supports a plurality of semiconductor elements 40A to 40F.
  • the material of the insulating substrate 30 is not particularly limited.
  • Examples of the material of the insulating substrate 30 include ceramics such as alumina (Al 2 O 3 ), silicon nitride (SiN), aluminum nitride (AlN), and alumina containing zirconia.
  • the thickness of the insulating substrate 30 is not particularly limited, and is, for example, about 0.1 mm to 1.0 mm.
  • the shape of the insulating substrate 30 is not particularly limited. As shown in FIGS. 12 to 15, in this modification, the insulating substrate 30 has a main surface 3a and a back surface 3b.
  • the main surface 3a faces the z1 side in the thickness direction z.
  • the back surface 3b faces the opposite side to the main surface 3a (the z2 side in the thickness direction z). In this modification, the back surface 3b is exposed from the sealing resin 8.
  • a heat dissipating member for example, a heat sink, etc. (not shown) can be attached to the back surface 3b.
  • the insulating substrate 30 has a rectangular shape in plan view.
  • the insulating substrate 30 has an elongated rectangular shape whose longitudinal direction is the first direction x when viewed in the thickness direction z.
  • the insulating substrate 30 is an example of a "support body" of the present disclosure, and the support body is made of the insulating substrate 30.
  • the conductive part 5 is formed on the insulating substrate 30. In this modification, the conductive portion 5 is formed on the main surface 3a of the insulating substrate 30.
  • the conductive part 5 is made of a conductive material.
  • the conductive material constituting the conductive part 5 is not particularly limited. Examples of the conductive material of the conductive portion 5 include materials containing silver (Ag), copper (Cu), gold (Au), and the like. In the following description, a case where the conductive portion 5 contains silver will be described as an example. Note that the conductive portion 5 may contain copper instead of silver, or may contain gold instead of silver or copper. Alternatively, the conductive portion 5 may contain Ag--Pt or Ag--Pd.
  • the method of forming the conductive portion 5 is not limited, and may be formed, for example, by firing a paste containing these metals.
  • the thickness of the conductive portion 5 is not particularly limited, and is, for example, about 5 ⁇ m to 30 ⁇ m.
  • the conductive part 5 includes two wiring parts 501, a connecting part 515, and a connecting part 521, as shown in FIGS. 12, 13, and 14, for example.
  • the two wiring sections 501 are arranged near the corners of the insulating substrate 30 on the x1 side in the first direction x and on the y1 side in the second direction y.
  • the two wiring sections 501 are spaced apart from each other and arranged side by side in the second direction y.
  • Each wiring section 501 has a pad section 502.
  • the pad section 502 is located at the end of the wiring section 501 on the x2 side in the first direction x.
  • Each terminal of the thermistor 6 is connected to the two pad portions 502, respectively.
  • the connecting portion 515 is interposed between the insulating substrate 30 and the lead 15 in the thickness direction z.
  • the connecting portion 521 is interposed between the insulating substrate 30 and the leads 21 and 22 in the thickness direction z.
  • a plurality of bonding parts 511 to 514 are formed on the insulating substrate 30.
  • the plurality of joints 511 to 514 are formed on the main surface 3a of the insulating substrate 30.
  • the material of the bonding parts 511 to 514 is not particularly limited, and is made of, for example, a material that can bond the insulating substrate 30 and the lead 1.
  • the joints 511 to 514 are made of, for example, a conductive material.
  • the conductive material forming the joints 511 to 514 is not particularly limited. Examples of the conductive material constituting the joints 511 to 514 include materials containing silver (Ag), copper (Cu), gold (Au), and the like.
  • the bonding portions 511 to 514 contain silver.
  • the bonding parts 511 to 514 in this example include the same conductive material that constitutes the conductive part 5.
  • the joint portions 511 to 514 may contain copper instead of silver, or may contain gold instead of silver or copper.
  • the joints 511 to 514 may contain Ag-Pt or Ag-Pd.
  • the method of forming the contact portions 511 to 514 is not limited, and for example, similarly to the conductive portion 5, they are formed by firing a paste containing these metals.
  • the thickness of the bonding portions 511 to 514 is not particularly limited, and is, for example, about 5 ⁇ m to 30 ⁇ m.
  • the plurality of leads 1 are configured to include metal, and have better heat dissipation characteristics than, for example, the insulating substrate 30.
  • the metal constituting the lead 1 is not particularly limited, and includes, for example, copper (Cu), aluminum, iron (Fe), oxygen-free copper, or alloys thereof (for example, Cu-Sn alloy, Cu-Zr alloy, Cu-Fe alloy). etc.).
  • the plurality of leads 1 may be plated with nickel (Ni).
  • the plurality of leads 1 may be formed, for example, by pressing a metal mold against a metal plate, or may be formed by patterning a metal plate by etching, but is not limited thereto.
  • the thickness of each lead 1 is not particularly limited, and is, for example, about 0.4 mm to 0.8 mm. Each lead 1 is spaced apart from each other.
  • the plurality of leads 1 include a lead 11, a lead 12, a lead 13, a lead 14, and a lead 15.
  • Lead 11, lead 12, lead 13, lead 14, and lead 15 constitute a conductive path to semiconductor element 4, for example.
  • the lead 11 is arranged on the insulating substrate 30, and in this modification, is arranged on the main surface 3a.
  • Lead 11 is an example of the "first lead” of the present disclosure.
  • the lead 11 is bonded to the bonding portion 511 via the bonding material 18.
  • the bonding material 18 may be any material that can bond the lead 11 to the bonding portion 511. From the viewpoint of more efficiently transmitting heat from the leads 11 to the insulating substrate 30, the bonding material 18 preferably has a higher thermal conductivity, such as silver paste, copper paste, solder, or the like.
  • the bonding material 18 may be an insulating material such as epoxy resin or silicone resin.
  • the leads 11 may be bonded to the insulating substrate 30.
  • the structure of the lead 11 is not particularly limited, and in this modification, the lead 11 will be explained by dividing it into a mounting part 110, a protruding part 112, and an inclined part 113, as shown in FIGS. 12 and 15.
  • the mounting portion 110 is arranged on the main surface 3a of the insulating substrate 30 closer to the x2 side in the first direction x.
  • Semiconductor elements 40A, 40B, and 40C are arranged on the upper surface of the mounting portion 110 (the surface facing the z1 side in the thickness direction z).
  • the mounting portion 110 has a plurality of recesses 110a.
  • the plurality of recesses 110a are recessed from the upper surface of the mounting portion 110 toward the z2 side in the thickness direction z.
  • the shape of the recess 110a in plan view is not particularly limited, and may be, for example, circular, oval, rectangular, triangular, or the like. Further, in the illustrated example, the plurality of recesses 110a are arranged in a matrix.
  • the lower surface of the mounting portion 110 (the surface facing the z2 side in the thickness direction z) is bonded to the bonding portion 511 with the bonding material 18 .
  • the inclined part 113 is connected to the mounting part 110 and is inclined with respect to the mounting part 110.
  • the protruding portion 112 is connected to the inclined portion 113, and most of the protruding portion 112 protrudes from the sealing resin 8.
  • two protrusions 112 are provided at intervals in the first direction x. Each protrusion 112 protrudes in the second direction y to the side opposite to the mounting part 110.
  • the protrusion 112 is used, for example, to electrically connect the semiconductor device A12 to an external circuit.
  • the protrusion 112 is bent toward the side facing the main surface 3a of the insulating substrate 30 in the thickness direction z.
  • the leads 12 are arranged on the insulating substrate 30, and in this modification, are arranged on the main surface 3a.
  • Lead 12 is an example of the "first lead” of the present disclosure. Further, the lead 12 is bonded to a bonding portion 512 via a bonding material 18.
  • the structure of the lead 12 is not particularly limited, and in this modification, the lead 12 will be explained by dividing it into a mounting part 120, a protruding part 122, and an inclined part 123, as shown in FIGS. 12 and 15.
  • the mounting section 120 is arranged on the x1 side of the first direction x with respect to the mounting section 110 and is adjacent to the mounting section 110.
  • a semiconductor element 40D is arranged on the upper surface of the mounting portion 120 (the surface facing the z1 side in the thickness direction z).
  • the mounting portion 120 has a plurality of recesses 120a.
  • the plurality of recesses 120a are recessed from the upper surface of the mounting portion 120 toward the z2 side in the thickness direction z.
  • the shape of the recess 120a in plan view is not particularly limited, and may be, for example, circular, oval, rectangular, triangular, or the like.
  • the plurality of recesses 120a are arranged in a matrix.
  • the lower surface of the mounting portion 120 (the surface facing the z2 side in the thickness direction z) is bonded to the bonding portion 512 by the bonding material 18 .
  • the inclined part 123 is connected to the mounting part 120 and is inclined with respect to the mounting part 120.
  • the protruding portion 122 is connected to the inclined portion 123, and most of the protruding portion 122 protrudes from the sealing resin 8.
  • the protruding portion 122 protrudes in the second direction y on the opposite side from the mounting portion 120.
  • the protruding portion 122 is used, for example, to electrically connect the semiconductor device A12 to an external circuit.
  • the protrusion 122 is bent toward the side facing the main surface 3a of the insulating substrate 30 in the thickness direction z.
  • the lead 13 is arranged on the insulating substrate 30, and in this modification, is arranged on the main surface 3a.
  • Lead 13 is an example of the "first lead” of the present disclosure. Further, the lead 13 is bonded to a bonding portion 513 via a bonding material 18.
  • the structure of the lead 13 is not particularly limited, and in this modification, the lead 13 will be explained by dividing it into a mounting part 130, a protruding part 132, and an inclined part 133, as shown in FIGS. 12, 14, and 15. .
  • the mounting section 130 is arranged on the x1 side of the first direction x with respect to the mounting section 120 and is adjacent to the mounting section 120.
  • the semiconductor element 40E is arranged on the upper surface of the mounting portion 130 (the surface facing the z1 side in the thickness direction z).
  • the mounting portion 130 has a plurality of recesses 130a.
  • the plurality of recesses 130a are recessed from the upper surface of the mounting portion 130 toward the z2 side in the thickness direction z.
  • the shape of the recess 130a in plan view is not particularly limited, and may be, for example, circular, oval, rectangular, triangular, or the like. Further, in the illustrated example, the plurality of recesses 130a are arranged in a matrix.
  • the lower surface of the mounting portion 130 (the surface facing the z2 side in the thickness direction z) is bonded to the bonding portion 513 by the bonding material 18 .
  • the inclined part 133 is connected to the mounting part 130 and is inclined with respect to the mounting part 130.
  • the protruding portion 132 is connected to the inclined portion 133, and most of the protruding portion 132 protrudes from the sealing resin 8.
  • the protruding portion 132 protrudes in the second direction y to the side opposite to the mounting portion 130.
  • the protrusion 132 is used, for example, to electrically connect the semiconductor device A12 to an external circuit. In the illustrated example, the protrusion 132 is bent toward the side facing the main surface 3a of the insulating substrate 30 in the thickness direction z.
  • the lead 14 is arranged on the insulating substrate 30, and in this modification, is arranged on the main surface 3a.
  • Lead 14 is an example of the "first lead” of the present disclosure. Further, the lead 14 is bonded to the bonding portion 512 via the bonding material 18.
  • the configuration of the lead 12 is not particularly limited, and in this modification, the lead 14 will be explained by dividing it into a mounting part 140, a protruding part 142, and an inclined part 143, as shown in FIGS. 12, 13, and 15. .
  • the mounting section 140 is arranged on the x1 side of the first direction x with respect to the mounting section 130 and is adjacent to the mounting section 130.
  • the semiconductor element 40F is arranged on the upper surface of the mounting portion 140 (the surface facing the z1 side in the thickness direction z).
  • the mounting portion 140 has a plurality of recesses 140a.
  • the plurality of recesses 140a are recessed from the upper surface of the mounting portion 140 toward the z2 side in the thickness direction z.
  • the shape of the recess 140a in plan view is not particularly limited, and may be, for example, circular, oval, rectangular, triangular, or the like.
  • the plurality of recesses 140a are arranged in a matrix.
  • the lower surface of the mounting portion 140 (the surface facing the z2 side in the thickness direction z) is bonded to the bonding portion 514 by the bonding material 18 .
  • the inclined part 143 is connected to the mounting part 140 and is inclined with respect to the mounting part 140.
  • the protruding portion 142 is connected to the inclined portion 143, and most of the protruding portion 142 protrudes from the sealing resin 8.
  • the protruding portion 142 protrudes in the second direction y on the opposite side from the mounting portion 140.
  • the protrusion 142 is used, for example, to electrically connect the semiconductor device A12 to an external circuit. In the illustrated example, the protrusion 142 is bent toward the side facing the main surface 3a of the insulating substrate 30 in the thickness direction z.
  • the leads 15 are arranged on the insulating substrate 30, and in this modification, are arranged on the main surface 3a. As shown in FIGS. 12 and 13, the lead 15 is bonded to the connecting portion 515 via the bonding material 18.
  • the structure of the lead 15 is not particularly limited, and in this modification, the lead 15 will be explained by dividing it into a pad part 151, a protrusion part 152, and an inclined part 153, as shown in FIGS. 12 and 13.
  • the pad portion 151 is covered with the sealing resin 8.
  • the pad portion 151 is parallel (or substantially parallel) to the insulating substrate 30.
  • a wire 71 is bonded to the upper surface of the pad portion 151 (the surface facing the z1 side in the thickness direction z).
  • the lower surface of the pad portion 151 (the surface facing the z2 side in the thickness direction z) is bonded to the connecting portion 515 by the bonding material 18.
  • the inclined portion 153 is connected to the pad portion 151 and is inclined with respect to the pad portion 151.
  • the protruding portion 152 is connected to the inclined portion 153, and most of the protruding portion 152 protrudes from the sealing resin 8.
  • the protrusion 152 is used, for example, to electrically connect the semiconductor device A12 to an external circuit. In the illustrated example, the protrusion 152 is bent toward the side facing the main surface 3a of the insulating substrate 30 in the thickness direction z.
  • the plurality of leads 2 are configured to include metal, and have higher thermal conductivity than, for example, the insulating substrate 31.
  • the metal forming the lead 2 is not particularly limited, and may be copper, aluminum, iron (Fe), oxygen-free copper, or an alloy thereof (for example, Cu-Sn alloy, Cu-Zr alloy, Cu-Fe alloy, etc.). be.
  • the plurality of leads 2 may be plated with nickel (Ni).
  • the plurality of leads 2 may be formed, for example, by pressing a metal mold against a metal plate, or by patterning a metal plate by etching. Note that the method for forming the plurality of leads 2 is not limited.
  • the thickness of each lead 2 is not particularly limited, and is, for example, about 0.4 mm to 0.8 mm. Each lead 2 is spaced apart from each other.
  • the plurality of leads 2 are configured to include metal, and have higher thermal conductivity than, for example, the insulating substrate 30.
  • the metal forming the lead 2 is not particularly limited, and may be copper, aluminum, iron (Fe), oxygen-free copper, or an alloy thereof (for example, Cu-Sn alloy, Cu-Zr alloy, Cu-Fe alloy, etc.). be.
  • the plurality of leads 2 may be plated with nickel (Ni).
  • Ni nickel
  • the plurality of leads 2 may be formed, for example, by pressing a metal mold against a metal plate, or by patterning a metal plate by etching. Note that the method for forming the plurality of leads 2 is not limited.
  • the thickness of each lead 2 is not particularly limited, and is, for example, about 0.4 mm to 0.8 mm. Each lead 2 is spaced apart from each other.
  • the multiple leads 2 include multiple leads 21, multiple leads 22, and two leads 23.
  • Lead 21 and lead 22 constitute a conduction path to source electrode 43 and gate electrode 44 of semiconductor element 4 (semiconductor elements 40A to 40F).
  • the two leads 23 constitute a conduction path to the thermistor 6.
  • the plurality of leads 21 are each arranged on the insulating substrate 30, and in this modification, are arranged on the main surface 3a.
  • the plurality of leads 21 are arranged at intervals in the first direction x.
  • the structure of the lead 21 is not particularly limited. In this embodiment, as shown in FIGS. 12 and 14, the lead 21 will be explained by dividing it into a protruding portion 212, an inclined portion 213, and a parallel portion 214.
  • the parallel portion 214 is covered with the sealing resin 8.
  • the parallel portion 214 is parallel (or substantially parallel) to the insulating substrate 30.
  • the lower surface of the parallel portion 214 (the surface facing the z2 side in the thickness direction z) is bonded to the connecting portion 521 by the conductive bonding material 28.
  • the inclined portion 213 is connected to the end of the parallel portion 214 and is inclined with respect to the parallel portion 214 .
  • the protruding portion 212 is connected to the end of the inclined portion 213 and is a portion of the lead 21 that protrudes from the sealing resin 8 .
  • the protruding portion 212 protrudes from the sealing resin 8 toward the y1 side in the second direction y.
  • the protrusion 212 is used, for example, to electrically connect the semiconductor device A12 to an external circuit. In the illustrated example, the protrusion 212 is bent toward the side facing the main surface 3a of the insulating substrate 30 in the thickness direction z.
  • the plurality of leads 22 are each arranged on the insulating substrate 30, and in this modification, are arranged on the main surface 3a.
  • the plurality of leads 22 are arranged at intervals in the first direction x.
  • Each of the plurality of leads 22 is arranged in close proximity to form a pair with one of the plurality of leads 21.
  • the structure of the lead 22 is not particularly limited. In this embodiment, as shown in FIG. 12, the lead 22 will be explained by dividing it into a protruding part 222, an inclined part 223, and a parallel part 224.
  • the parallel portion 224 is covered with the sealing resin 8.
  • the parallel portion 224 is parallel (or substantially parallel) to the insulating substrate 30.
  • the lower surface of the parallel portion 224 (the surface facing the z2 side in the thickness direction z) is bonded to the connecting portion 521 by the conductive bonding material 28.
  • the inclined portion 223 is connected to an end of the parallel portion 224 and is inclined with respect to the parallel portion 224 .
  • the protruding portion 222 is connected to the end of the inclined portion 223 and is a portion of the lead 22 that protrudes from the sealing resin 8 .
  • the protrusion 222 protrudes from the sealing resin 8 toward the y1 side in the second direction y.
  • the protrusion 222 is used, for example, to electrically connect the semiconductor device A12 to an external circuit. In the illustrated example, the protrusion 222 is bent toward the side facing the main surface 3a of the insulating substrate 30 in the thickness direction z.
  • the two leads 23 are each arranged on the insulating substrate 30, and in this modification, are arranged on the main surface 3a.
  • the two leads 23 are arranged side by side in the first direction x.
  • the structure of the lead 23 is not particularly limited. In this embodiment, as shown in FIGS. 12 and 13, the lead 23 will be explained by dividing it into a protruding portion 232, an inclined portion 233, and a parallel portion 234.
  • the parallel portion 234 is covered with the sealing resin 8.
  • the parallel portion 234 is parallel (or substantially parallel) to the insulating substrate 30.
  • the lower surface of the parallel portion 234 (the surface facing the z2 side in the thickness direction z) is bonded to the wiring portion 501 by the conductive bonding material 28.
  • the inclined part 233 is connected to the end of the parallel part 234 and is inclined with respect to the parallel part 234.
  • the protruding portion 232 is connected to the end of the inclined portion 233 and is a portion of the lead 23 that protrudes from the sealing resin 8 .
  • the protruding portion 232 protrudes from the sealing resin 8 toward the y1 side in the second direction y.
  • the protrusion 232 is used, for example, to electrically connect the semiconductor device A12 to an external circuit. In the illustrated example, the protrusion 232 is bent toward the side facing the main surface 3a of the insulating substrate 30 in the thickness direction z.
  • each semiconductor element 4 is conductively connected to one of the plurality of leads 21 by a wire 72.
  • the lead 21 is a gate terminal of each semiconductor element 4.
  • the source electrode 43 of each semiconductor element 4 is conductively connected to a wire 73 and one of the plurality of leads 22.
  • the lead 22 is a source sense terminal of each semiconductor element 4.
  • the plurality of semiconductor elements 4 are arranged side by side in the first direction x.
  • the semiconductor element 40B is located on the y1 side of the second direction y with respect to the semiconductor element 40A in the second direction y.
  • the semiconductor element 40C is located on the y1 side in the second direction y with respect to the semiconductor element 40B.
  • the four semiconductor elements 40C to 40F are arranged at regular intervals along the first direction x.
  • the thermistor 6 is placed close to one of the plurality of semiconductor elements 40A to 40F. As shown in FIG. 12, the thermistor 6 is arranged near a corner of the insulating substrate 30 on the x1 side in the first direction x and on the y1 side in the second direction y. In the illustrated example, the thermistor 6 is closest to the semiconductor element 40F located at the end on the x1 side in the first direction x among the semiconductor elements 40A to 40F.
  • the semiconductor device A12 of this modification includes an insulating substrate 30, semiconductor elements 40A to 40F, a conductive portion 5 made of a conductive material, a thermistor 6, and a sealing resin 8.
  • the insulating substrate 30 has a main surface 3a and a back surface 3b, and the conductive part 5 is formed on the main surface 3a.
  • the thermistor 6 is bonded to the conductive portion 5 (pad portion 502 of the wiring portion 501) via a conductive bonding material 63. According to such a configuration, the thermistor 6 is mounted on the main surface 3a of the insulating substrate 30 via the conductive part 5 (the pad part 502 of the wiring part 501).
  • the conductive part 5 can be made thinner than the lead 1 (leads 11 to 14) on which the semiconductor elements 40A to 40F are mounted, thereby reducing the stress generated in the thermistor 6 when the semiconductor elements 40A to 40F generate heat. can be reduced. As a result, it is possible to improve the durability of the thermistor 6 and to appropriately detect the temperature of the semiconductor device A12. Furthermore, in the configuration in which the thermistor 6 is mounted on the conductive part 5, the sensitivity of temperature detection on the insulating substrate 30 side can be improved compared to, for example, a case in which the thermistor 6 is disposed on the thick lead 1. can. Further, the back surface 3b of the insulating substrate 30 is exposed from the sealing resin 8. According to such a configuration, the heat transmitted from the semiconductor elements 40A to 40F to the insulating substrate 30 can be efficiently released to the outside from the back surface 3b, and the heat dissipation performance of the semiconductor device A12 is improved.
  • the thermistor 6 is placed close to one of the plurality of semiconductor elements 40A to 40F. According to such a configuration, the temperature of the semiconductor device A12 (on the insulating substrate 30 side) due to the influence of heat generation of the plurality of semiconductor elements 40A to 40F can be appropriately detected.
  • the thermistor 6 is disposed near the corner of the insulating substrate 30 on the x1 side in the first direction x and on the y1 side in the second direction y, and is located near the corner of the insulating substrate 30 on the x1 side in the first direction x. It is closest to the semiconductor element 40F located at . According to such a configuration, the thermistor 6 can be efficiently arranged on the insulating substrate 30.
  • the leads 11 to 14 are bonded to the bonding portions 511 to 514 via the bonding material 18.
  • Joint parts 511 to 514 include the same conductive material as conductive part 5. According to such a configuration, the conductive portion 5 and the bonding portions 511 to 514 can be formed on the insulating substrate 30 all at once. This is preferable for improving the manufacturing efficiency of the semiconductor device A12.
  • the semiconductor device A12 of this modification includes an insulating member 62.
  • the insulating member 62 is filled between the main surface 3a of the insulating substrate 30 and the thermistor 6. According to such a configuration, after the sealing resin 8 is formed, it is possible to prevent the inconvenience that a gap is generated in a relatively narrow gap between the main surface 3a and the thermistor 6. Thereby, the temperature of the semiconductor device A12 (insulating substrate 30 side) can be detected stably and accurately by the thermistor 6.
  • the cooler 91, the mounting member 92, the control means 94, the cooling means 95, the heating means 96, etc. are further provided, similarly to the semiconductor device assembly B1 including the semiconductor device A1 described above. It is possible to employ a configuration of a semiconductor device assembly including the following. In this case, the same effects as described above regarding the semiconductor device assembly B1 are achieved.
  • the semiconductor device A2 of this embodiment includes a plurality of leads 1, a plurality of leads 2, an insulating substrate 30, a plurality of semiconductor elements 4A to 4F, a plurality of control elements 4G, 4H, a plurality of electronic components 49U, 49V, 49W, a conductive 5, a plurality of joints 58, a thermistor 6, a plurality of wires 75A to 75F, a plurality of wires 76, and a sealing resin 8.
  • the semiconductor device A2 converts input DC power into AC power using a plurality of semiconductor elements 4A to 4F (switching elements).
  • the converted AC power is output as three phases (U phase, V phase, W phase) each having a different phase.
  • the application of the semiconductor device A2 is not particularly limited, it is configured as an IPM used for drive control of a motor, for example.
  • FIG. 16 is a perspective view showing the semiconductor device A2 of this embodiment.
  • FIG. 17 is a plan view showing the semiconductor device A2.
  • FIG. 18 is a bottom view showing the semiconductor device A2.
  • FIG. 19 is a plan view showing the semiconductor device A2, and is a view through the sealing resin 8.
  • FIG. 20 is a plan view showing the insulating substrate of the semiconductor device A2.
  • FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 19.
  • FIG. 22 is a sectional view of a main part taken along line XXII-XXII in FIG. 19.
  • FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 19.
  • the outer shape of the sealing resin 8 is shown by an imaginary line (two-dot chain line).
  • the insulating substrate 30 supports a plurality of semiconductor elements 4A to 4F.
  • the material of the insulating substrate 30 is not particularly limited.
  • Examples of the material of the insulating substrate 30 include ceramics such as alumina (Al 2 O 3 ), silicon nitride (SiN), aluminum nitride (AlN), and alumina containing zirconia.
  • the thickness of the insulating substrate 30 is not particularly limited, and is, for example, about 0.1 mm to 1.0 mm.
  • the shape of the insulating substrate 30 is not particularly limited. As shown in FIGS. 19 to 23, in this embodiment, the insulating substrate 30 has a main surface 3a and a back surface 3b.
  • the main surface 3a faces the z1 side in the thickness direction z.
  • the back surface 3b faces the opposite side to the main surface 3a (the z2 side in the thickness direction z). In this embodiment, the back surface 3b is exposed from the sealing resin 8.
  • a heat dissipating member for example, a heat sink, etc. (not shown) can be attached to the back surface 3b.
  • the insulating substrate 30 has a rectangular shape in plan view.
  • the insulating substrate 30 has an elongated rectangular shape whose longitudinal direction is the first direction x when viewed in the thickness direction z.
  • the insulating substrate 30 is an example of a "support body" of the present disclosure, and the support body is made of the insulating substrate 30.
  • the conductive part 5 is formed on the insulating substrate 30. In this embodiment, the conductive part 5 is formed on the main surface 3a of the insulating substrate 30.
  • the conductive part 5 is made of a conductive material.
  • the conductive material constituting the conductive part 5 is not particularly limited. Examples of the conductive material of the conductive portion 5 include materials containing silver (Ag), copper (Cu), gold (Au), and the like. In the following description, a case where the conductive portion 5 contains silver will be described as an example. Note that the conductive portion 5 may contain copper instead of silver, or may contain gold instead of silver or copper. Alternatively, the conductive portion 5 may include Ag--Pt or Ag--Pd.
  • the method of forming the conductive portion 5 is not limited, and may be formed, for example, by firing a paste containing these metals.
  • the thickness of the conductive portion 5 is not particularly limited, and is, for example, about 5 ⁇ m to 30 ⁇ m.
  • the shape etc. of the conductive part 5 are not particularly limited. For example, as shown in FIG. The explanation will be divided into a base portion 56 and a connecting portion 57.
  • the shape of the first base portion 55 is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected.
  • the first base 55 has a rectangular shape.
  • the first base portion 55 has an elongated rectangular shape whose longitudinal direction is the first direction x.
  • the shape of the second base portion 56 is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected.
  • the second base 56 has a rectangular shape.
  • the second base portion 56 has an elongated rectangular shape whose longitudinal direction is the first direction x.
  • the connecting portion 57 is interposed between the first base portion 55 and the second base portion 56, and connects the first base portion 55 and the second base portion 56 in the illustrated example.
  • the connecting portion 57 is located between the first base portion 55 and the second base portion 56 when viewed in the second direction y.
  • the shape of the connecting portion 57 is not particularly limited.
  • the sides of the first base portion 55, the second base portion 56, and the connecting portion 57 on the y2 side in the second direction y are at the same (or substantially the same) position in the second direction y.
  • the wiring section 50A will be explained by being divided into a first section 51A, a second section 52A, and a third section 53A.
  • the shape of the first portion 51A is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected.
  • the first portion 51A has a rectangular shape that extends in the first direction x.
  • the first portion 51A is spaced apart from the first base portion 55 on the x2 side in the first direction x. Further, in the illustrated example, the first portion 51A partially overlaps the first base portion 55 when viewed in the first direction x.
  • the second portion 52A is arranged closer to the y1 side in the second direction y than the first portion 51A.
  • the shape of the second portion 52A is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected. In the illustrated example, the second portion 52A has a rectangular shape.
  • the third part 53A is interposed between the first part 51A and the second part 52A, and in the illustrated example, is connected to the first part 51A and the second part 52A.
  • the shape of the third portion 53A is not particularly limited, and in the illustrated example, it has a rectangular shape that extends long in the second direction y.
  • the wiring section 50B will be explained by being divided into a first section 51B and a second section 52B.
  • the shape of the first portion 51B is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected.
  • the first portion 51B has a rectangular shape that extends in the second direction y.
  • the first portion 51B is arranged at a distance from the first base portion 55 toward the y1 side in the second direction y. Further, the first portion 51B is arranged further away from the first portion 51A on the x1 side in the first direction x than the first portion 51A.
  • the second portion 52B is arranged closer to the y1 side in the second direction y than the first portion 51B. Further, the second portion 52B is disposed further away from the second portion 52A on the x1 side in the first direction x than the second portion 52A.
  • the shape of the second portion 52B is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected. In the illustrated example, the second portion 52B has a rectangular shape. In the illustrated example, the first part 51B and the second part 52B are connected to each other.
  • the wiring section 50C will be explained by being divided into a first section 51C and a second section 52C.
  • the shape of the first portion 51C is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected.
  • the first portion 51C has a rectangular shape that extends in the second direction y.
  • the first portion 51C is spaced apart from the first base portion 55 in the second direction y on the y1 side in the second direction y.
  • the first portion 51C is disposed further away from the first portion 51B on the x1 side in the first direction x than the first portion 51B.
  • the first portion 51C coincides with the first portion 51B when viewed in the first direction x.
  • the second portion 52C is arranged closer to the y1 side in the second direction y than the first portion 51C. Further, the second portion 52C is disposed further away from the second portion 52B on the x1 side in the first direction x than the second portion 52B.
  • the shape of the second portion 52C is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected. In the illustrated example, the first part 51C and the second part 52C are connected to each other.
  • the wiring section 50U is spaced apart from the wiring section 50A, and is arranged adjacent to the wiring section 50A.
  • the shape of the wiring portion 50U is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected. In the illustrated example, the wiring section 50U has a rectangular shape.
  • the wiring part 50U is arranged on the y1 side in the second direction y with respect to the first part 51A of the wiring part 50A.
  • the wiring portion 50V is spaced apart from the wiring portion 50B and is arranged adjacent to the wiring portion 50B.
  • the shape of the wiring portion 50V is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected. In the illustrated example, the wiring portion 50V has a rectangular shape. Further, the wiring portion 50V is arranged on the x2 side in the first direction x with respect to the first portion 51B of the wiring portion 50B. Further, the wiring portion 50V is arranged apart from the wiring portion 50U on the x1 side in the first direction x.
  • the wiring portion 50W is spaced apart from the wiring portion 50C and is arranged adjacent to the wiring portion 50C.
  • the shape of the wiring portion 50W is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected. In the illustrated example, the wiring portion 50W has a rectangular shape.
  • the wiring part 50W is arranged on the x1 side in the first direction x with respect to the first part 51C of the wiring part 50C.
  • the wiring part 50W is spaced apart from the wiring part 50V on the x1 side in the first direction x with the first part 51B and the first part 51C interposed therebetween.
  • the wiring parts 50D to 50G are arranged on the x1 side in the first direction x with respect to the wiring part 50W.
  • the wiring portions 50D to 50G are arranged in this order.
  • the wiring portions 50D to 50G have two rectangular pad-shaped portions located at both ends and a bent band-shaped portion connecting these pad-shaped portions.
  • the wiring portion 50H is connected to the second base 56 and extends from the second base 56 toward the y1 side in the second direction y.
  • the wiring portion 50H has a pad-shaped portion.
  • the wiring portions 50I to 50M are arranged in this order on the x1 side of the first direction x with respect to the wiring portion 50H in the first direction x.
  • the wiring portions 50I to 50M each include a pad-like portion located on the second base 56 side, a pad-like portion located on the y1 side in the second direction y, and a band-like portion connecting these pad-like portions. has.
  • the wiring portion 50N is connected to the second base 56 and extends from the second base 56 in a direction inclined with respect to the first direction x.
  • the wiring portion 50N includes a pad-shaped portion located on the x1 side in the first direction x, and a band-shaped portion connecting the pad-shaped portion and the second base portion 56.
  • the wiring portion 50O is located on the x1 side in the first direction x with respect to the second base portion 56.
  • the wiring portion 50O includes a pad-like portion located on the x1 side in the first direction x, a pad-like portion 502O located on the second base 56 side, and a band-like portion connecting these pad-like portions.
  • the wiring portion 50P is located on the y2 side in the second direction y with respect to the wiring portion 50O, and is located on the x1 side in the first direction x with respect to the second base portion 56.
  • the wiring portion 50P includes a pad-like portion located on the x1 side in the first direction x, a pad-like portion 502P located on the second base 56 side, and a band-like portion connecting these pad-like portions.
  • the wiring portions 50A to 50P and 50U to 50W are formed in the region 30B of the insulating substrate 30 on the y1 side in the second direction y.
  • the plurality of joints 58 are formed on the insulating substrate 30.
  • the plurality of joints 58 are formed on the main surface 3a of the insulating substrate 30.
  • the material of the bonding portion 58 is not particularly limited, and is made of, for example, a material capable of bonding the insulating substrate 30 and the lead 1.
  • the joint portion 58 is made of, for example, a conductive material.
  • the conductive material constituting the joint portion 58 is not particularly limited. Examples of the conductive material of the joint portion 58 include those containing silver (Ag), copper (Cu), gold (Au), and the like. In the following description, a case where the bonding portion 58 contains silver will be described as an example.
  • the joint portion 58 in this example includes the same conductive material that constitutes the conductive portion 5.
  • the joint portion 58 may contain copper instead of silver, or may contain gold instead of silver or copper.
  • the joint portion 58 may contain Ag--Pt or Ag--Pd.
  • the method of forming the bonding portion 58 is not limited, and for example, similarly to the conductive portion 5, the bonding portion 58 is formed by firing a paste containing these metals.
  • the thickness of the joint portion 58 is not particularly limited, and is, for example, about 5 ⁇ m to 30 ⁇ m.
  • the plurality of joints 58 include joints 58A to 58D.
  • the joint portion 58A is arranged on the y2 side of the second direction y with respect to the conductive portion 5 in the second direction y.
  • the joint portion 58A overlaps all of the first base portion 55 when viewed in the second direction y.
  • the shape of the joint portion 58A is not particularly limited.
  • the joint portion 58B is arranged on the y2 side of the second direction y with respect to the conductive portion 5 in the second direction y.
  • the joint portion 58B is arranged closer to the x1 side in the first direction x than the joint portion 58A.
  • the joint portion 58B overlaps the connecting portion 57 and the second base portion 56 when viewed in the second direction y.
  • the shape of the joint portion 58B is not particularly limited.
  • the joint portion 58C is arranged on the y2 side of the second direction y with respect to the conductive portion 5.
  • the joint portion 58C is arranged closer to the x1 side in the first direction x than the joint portion 58B. In the illustrated example, all of the joint portions 58C overlap the second base portion 56 when viewed in the second direction y.
  • the shape of the joint portion 58C is not particularly limited.
  • the joint portion 58D is disposed closer to the y2 side of the second direction y than the conductive portion 5 in the second direction y.
  • the joint portion 58D is arranged closer to the x1 side in the first direction x than the joint portion 58C.
  • the joint portion 58D overlaps with the second base portion 56, the wiring portion 50O, and the wiring portion 50P when viewed in the second direction y.
  • the shape of the joint portion 58D is not particularly limited.
  • the bonding parts 58A to 58D are formed in a region 30A of the insulating substrate 30 on the y2 side in the second direction y relative to the conductive part 5.
  • the plurality of leads 1 are configured to include metal, and have better heat dissipation characteristics than, for example, the insulating substrate 30.
  • the metal constituting the lead 1 is not particularly limited, and includes, for example, copper (Cu), aluminum, iron (Fe), oxygen-free copper, or alloys thereof (for example, Cu-Sn alloy, Cu-Zr alloy, Cu-Fe alloy). etc.).
  • the plurality of leads 1 may be plated with nickel (Ni).
  • the plurality of leads 1 may be formed, for example, by pressing a metal mold against a metal plate, or may be formed by patterning a metal plate by etching, but is not limited thereto.
  • the thickness of the lead 1 is not particularly limited, and is, for example, about 0.4 mm to 0.8 mm. Each lead 1 is spaced apart from each other.
  • the plurality of leads 1 include a plurality of leads 1A to 1G and 1Z, as shown in FIGS. 16 to 19.
  • the plurality of leads 1A to 1G constitute conduction paths to, for example, semiconductor elements 4A to 4F.
  • the lead 1A is arranged on the insulating substrate 30, and in this embodiment, it is arranged on the main surface 3a.
  • Lead 1A is an example of the "first lead” of the present disclosure.
  • the lead 1A is bonded to the bonding portion 58A via the bonding material 17.
  • the bonding material 17 may be any material that can bond the lead 1A to the bonding portion 58A. From the viewpoint of more efficiently transmitting heat from the leads 1A to the insulating substrate 30, the bonding material 17 preferably has a higher thermal conductivity, such as silver paste, copper paste, solder, or the like.
  • the bonding material 17 may be an insulating material such as epoxy resin or silicone resin.
  • the bonding portion 58A is not formed on the insulating substrate 30, the lead 1A may be bonded to the insulating substrate 30.
  • the structure of the lead 1A is not particularly limited, and in this embodiment, as shown in FIG. 19, the lead 1A is divided into a first part 11A, a second part 12A, a third part 13A, and a fourth part 14A. explain.
  • the first portion 11A has a first surface 111A, a second surface 112A, and a plurality of recesses 1111A.
  • the first surface 111A is a surface facing the same side as the main surface 3a in the thickness direction z.
  • the second surface 112A is a surface facing opposite to the main surface 3a in the thickness direction z, and is a flat surface in the illustrated example.
  • the second surface 112A is bonded to the bonding portion 58A by a bonding material 17, as shown in FIGS. 21 and 23.
  • the plurality of recesses 1111A are recessed in the thickness direction z from the first surface 111A.
  • the shape of the recessed portion 1111A in plan view is not particularly limited, and may be, for example, circular, oval, rectangular, triangular, or the like. Further, in the illustrated example, the plurality of recesses 1111A are arranged in a matrix.
  • the third part 13A and the fourth part 14A are covered with sealing resin 8.
  • the third section 13A is connected to the first section 11A and the fourth section 14A.
  • the fourth portion 14A is located shifted toward the side facing the first surface 111A from the first portion 11A in the thickness direction z.
  • the second portion 12A is connected to the end of the fourth portion 14A, and is a portion of the lead 1A that protrudes from the sealing resin 8.
  • the second portion 12A protrudes on the opposite side from the first portion 11A in the second direction y.
  • the second portion 12A is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 12A is bent toward the side facing the first surface 111A in the thickness direction z.
  • the lead 1B is arranged on the insulating substrate 30, and in this embodiment, it is arranged on the main surface 3a.
  • Lead 1B is an example of the "first lead” of the present disclosure. Further, the lead 1B is bonded to the bonding portion 58B via the bonding material 17 described above. Further, if the bonding portion 58B is not formed on the insulating substrate 30, the lead 1B may be bonded to the insulating substrate 30.
  • the structure of the lead 1B is not particularly limited, and in this embodiment, as shown in FIG. 19, the lead 1B is divided into a first part 11B, a second part 12B, a third part 13B, and a fourth part 14B. explain.
  • the first part 11B has a first surface 111B, a second surface 112B, and a plurality of recesses 1111B.
  • the first surface 111B is a surface facing the same side as the main surface 3a in the thickness direction z.
  • the second surface 112B is a surface facing opposite to the first surface 111B in the thickness direction z, and is a flat surface in the illustrated example.
  • the second surface 112B is bonded to the bonding portion 58B by a bonding material 17, as shown in FIG.
  • the plurality of recesses 1111B are recessed in the thickness direction z from the first surface 111B.
  • the shape of the recessed portion 1111B in plan view is not particularly limited, and may be, for example, circular, oval, rectangular, triangular, or the like. Furthermore, in the illustrated example, the plurality of recesses 1111B are arranged in a matrix.
  • the third part 13B and the fourth part 14B are covered with sealing resin 8.
  • the third section 13B is connected to the first section 11B and the fourth section 14B. Similar to the fourth portion 14A of the lead 1A, the fourth portion 14B is located shifted toward the side facing the first surface 111B from the first portion 11B in the thickness direction z.
  • the second portion 12B is connected to the end of the fourth portion 14B, and is a portion of the lead 1B that protrudes from the sealing resin 8.
  • the second portion 12B protrudes on the opposite side from the first portion 11B in the second direction y.
  • the second portion 12B is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 12B is bent toward the side facing the first surface 111B in the thickness direction z.
  • the lead 1C is arranged on the insulating substrate 30, and in this embodiment, it is arranged on the main surface 3a.
  • Lead 1C is an example of the "first lead” of the present disclosure. Further, the lead 1C is bonded to the bonding portion 58C via the bonding material 17 described above. Further, if the bonding portion 58C is not formed on the insulating substrate 30, the lead 1C may be bonded to the insulating substrate 30.
  • the structure of the lead 1C is not particularly limited, and in this embodiment, as shown in FIG. 19, the lead 1C is divided into a first part 11C, a second part 12C, a third part 13C, and a fourth part 14C. explain.
  • the first portion 11C has a first surface 111C, a second surface 112C, and a plurality of recesses 1111C.
  • the first surface 111C is a surface facing the same side as the main surface 3a in the thickness direction z.
  • the second surface 112C is a surface facing opposite to the first surface 111C in the thickness direction z, and is a flat surface in the illustrated example.
  • the second surface 112C is bonded to the bonding portion 58C by a bonding material 17, as shown in FIG.
  • the plurality of recesses 1111C are recessed in the z direction from the first surface 111C.
  • the shape of the recessed portion 1111C as viewed in the z direction is not particularly limited, and may be, for example, circular, oval, rectangular, triangular, or the like. Further, in the illustrated example, the plurality of recesses 1111C are arranged in a matrix.
  • the third part 13C and the fourth part 14C are covered with sealing resin 8.
  • the third section 13C is connected to the first section 11C and the fourth section 14C. Similar to the fourth portion 14A of the lead 1A, the fourth portion 14C is located shifted from the first portion 11C toward the side facing the first surface 111C in the thickness direction z.
  • the second portion 12C is a connection between the ends of the fourth portion 14C, and is a portion of the lead 1C that protrudes from the sealing resin 8.
  • the second portion 12C protrudes on the opposite side from the first portion 11C in the second direction y.
  • the second portion 12C is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 12C is bent toward the side facing the first surface 111C in the thickness direction z.
  • the lead 1D is arranged on the insulating substrate 30, and in this embodiment, it is arranged on the main surface 3a.
  • Lead 1D is an example of the "first lead” of the present disclosure. Further, the lead 1D is bonded to the bonding portion 58D via the bonding material 17 described above. Further, if the bonding portion 58D is not formed on the insulating substrate 30, the lead 1D may be bonded to the insulating substrate 30.
  • the structure of the lead 1D is not particularly limited, and in this embodiment, as shown in FIG. 19, the lead 1D is divided into a first part 11D, a second part 12D, a third part 13D, and a fourth part 14D. explain.
  • the first portion 11D has a first surface 111D, a second surface 112D, and a plurality of recesses 1111D.
  • the first surface 111D is a surface facing the same side as the main surface 3a in the thickness direction z.
  • the second surface 112D is a surface facing opposite to the first surface 111D in the thickness direction z, and is a flat surface in the illustrated example.
  • the second surface 112D is bonded to the bonding portion 58D by a bonding material 17, as shown in FIG.
  • the plurality of recesses 1111D are recessed in the thickness direction z from the first surface 111D.
  • the shape of the recessed portion 1111D in plan view is not particularly limited, and may be, for example, circular, oval, rectangular, triangular, or the like. Furthermore, in the illustrated example, the plurality of recesses 1111D are arranged in a matrix.
  • the third part 13D and the fourth part 14D are covered with sealing resin 8.
  • the third section 13D is connected to the first section 11D and the fourth section 14D. Similar to the fourth portion 14A of the lead 1A, the fourth portion 14D is located shifted toward the side facing the first surface 111D from the first portion 11D in the thickness direction z.
  • the second portion 12D is connected to the end of the fourth portion 14D, and is a portion of the lead 1D that protrudes from the sealing resin 8.
  • the second portion 12D protrudes on the opposite side from the first portion 11D in the second direction y.
  • the second portion 12D is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 12D is bent toward the side facing the first surface 111D in the thickness direction z.
  • the lead 1E is spaced apart from the insulating substrate 30 in plan view.
  • the lead 1E is arranged on the y2 side of the second direction y with respect to the insulating substrate 30 in the second direction y.
  • the configuration of the lead 1E is not particularly limited, and in the present embodiment, the lead 1E will be described as being divided into a second portion 12E and a fourth portion 14E, as shown in FIG.
  • the fourth portion 14E is covered with sealing resin 8. Similar to the fourth portion 14D in the lead 1D, the fourth portion 14E is located shifted toward the side facing the first surface 111D from the first portion 11D in the thickness direction z. The fourth portion 14E overlaps the first portion 11D when viewed in the second direction y.
  • the second portion 12E is connected to the end of the fourth portion 14E, and is a portion of the lead 1E that protrudes from the sealing resin 8.
  • the second portion 12E protrudes on the opposite side from the fourth portion 14E in the second direction y.
  • the second portion 12E is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 12E is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 1F is spaced apart from the insulating substrate 30 in plan view.
  • the lead 1F is arranged on the y2 side of the second direction y with respect to the insulating substrate 30. Furthermore, the lead 1F is disposed on the opposite side of the fourth portion 14D from the lead 1E in the first direction x.
  • the structure of the lead 1F is not particularly limited, and in the present embodiment, the lead 1F will be described as being divided into a second part 12F and a fourth part 14F, as shown in FIG.
  • the fourth portion 14F is covered with sealing resin 8. Similar to the fourth portion 14D in the lead 1D, the fourth portion 14F is located shifted toward the side facing the first surface 111D from the first portion 11D in the thickness direction z. The fourth portion 14F overlaps with the first portion 11D when viewed in the second direction y.
  • the second portion 12F is connected to the end of the fourth portion 14F and is a portion of the lead 1F that protrudes from the sealing resin 8.
  • the second portion 12F protrudes on the opposite side from the fourth portion 14F in the second direction y.
  • the second portion 12F is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 12F is bent toward the side facing the main surface 3a in the thickness direction z.
  • the lead 1G is spaced apart from the insulating substrate 30 in plan view.
  • the lead 1G is arranged on the x1 side of the first direction x with respect to the insulating substrate 30 in the first direction x. Further, the lead 1G is disposed on the opposite side of the fourth portion 14D from the lead 1E in the first direction x.
  • the structure of the lead 1G is not particularly limited, and in the present embodiment, the lead 1G will be described as being divided into a second part 12G and a fourth part 14G, as shown in FIG.
  • the fourth portion 14G is covered with sealing resin 8. Similar to the fourth portion 14D in the lead 1D, the fourth portion 14G is located shifted toward the side facing the first surface 111D from the first portion 11D in the thickness direction z. The fourth portion 14G overlaps the fourth portion 14F when viewed in the second direction y.
  • the second portion 12G is connected to the end of the fourth portion 14G and is a portion of the lead 1G that protrudes from the sealing resin 8.
  • the second portion 12G protrudes on the opposite side from the fourth portion 14G in the second direction y.
  • the second portion 12G is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 12G is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 1Z is spaced apart from the insulating substrate 30 in plan view.
  • the lead 1Z is arranged on the x2 side of the first direction x with respect to the insulating substrate 30 in the first direction x. Further, the lead 1Z is disposed on the opposite side of the lead 1B from the lead 1A in the first direction x.
  • the structure of the lead 1Z is not particularly limited, and in the present embodiment, the lead 1Z will be described as being divided into a second part 12Z and a fourth part 14Z, as shown in FIG. Note that in this embodiment, the lead 1Z is insulated from the circuit of the semiconductor device A2.
  • the fourth portion 14Z is covered with sealing resin 8. Similar to the fourth portion 14D in the lead 1D, the fourth portion 14Z is located shifted from the first portion 11D toward the side facing the first surface 111D in the thickness direction z.
  • the shape of the fourth portion 14Z is not particularly limited, and in the illustrated example, it has a band shape extending in the second direction y.
  • the second portion 12Z is connected to the end of the fourth portion 14Z and is a portion of the lead 1Z that protrudes from the sealing resin 8.
  • the second portion 12Z protrudes on the opposite side from the fourth portion 14Z in the second direction y.
  • the second portion 12Z is used, for example, when mounting the semiconductor device A2 on an external circuit board.
  • the second portion 12Z is bent in the thickness direction z toward the side toward which the main surface 3a faces.
  • the plurality of leads 2 are configured to include metal, and have better heat dissipation characteristics than, for example, the insulating substrate 30.
  • the metal constituting the lead 2 is not particularly limited, and includes, for example, copper (Cu), aluminum, iron (Fe), oxygen-free copper, or alloys thereof (for example, Cu-Sn alloy, Cu-Zr alloy, Cu-Fe alloy). etc.).
  • the plurality of leads 2 may be plated with nickel (Ni).
  • the plurality of leads 2 may be formed, for example, by pressing a metal mold against a metal plate, or may be formed by patterning a metal plate by etching, but is not limited to this.
  • the thickness of the lead 2 is not particularly limited, and is, for example, about 0.4 mm to 0.8 mm.
  • the plurality of leads 2 are arranged so as to overlap the region 30B of the insulating substrate 30 in plan view.
  • the plurality of leads 2 include a plurality of leads 2A to 2P and 2Z, as shown in FIGS. 16 to 19.
  • the plurality of leads 2A to 2N constitute a conductive path to, for example, control elements 4G and 4H.
  • the two leads 2O and 2P constitute a conduction path to the thermistor 6.
  • the specific configuration of the leads 2A to 2P, 2Z is not particularly limited.
  • the configuration of the lead 2C, which will be described later with reference to FIG. 19, can be appropriately applied to the leads 2A to 2P.
  • the lead 2C is separated from the plurality of leads 1.
  • the lead 2C is arranged on the conductive part 5.
  • the lead 2C is electrically connected to the conductive part 5. Further, the lead 2C is bonded to the second portion 52C of the wiring portion 50C of the conductive portion 5 via a conductive bonding material 29.
  • the structure of the lead 2C is not particularly limited, and in this embodiment, as shown in FIGS. 19 and 21, the lead 2C has a first part 21C, a second part 22C, a third part 23C, and a fourth part 24C. Let's categorize and explain. This specific configuration can be appropriately adopted for the leads 2A, 2B, 2D to 2P.
  • the first portion 21C is a portion joined to the wiring portion 50C.
  • the shape of the first portion 21C is not particularly limited, and a rectangular shape, a polygonal shape, a circular shape, an elliptical shape, etc. are appropriately selected.
  • the first portion 21C has a rectangular shape, and is a long rectangular shape whose longitudinal direction is in the y direction.
  • the first portion 21C overlaps the wiring portion 50C when viewed in the thickness direction z.
  • the first portion 21C has a through hole 211C.
  • the through hole 211C penetrates the first portion 21C in the thickness direction z.
  • the inside of the through hole 211C is filled with a conductive bonding material 29.
  • the conductive bonding material 29 is formed over the surface of the lead 2C.
  • the conductive bonding material 29 may be configured to remain within the through hole 211C and not reach the surface of the lead 2C.
  • the third part 23C and the fourth part 24C are covered with sealing resin 8.
  • the third section 23C is connected to the first section 21C and the fourth section 24C.
  • the fourth portion 24C is positioned to be shifted from the first portion 21C toward the side toward which the main surface 3a faces in the thickness direction z.
  • the first portion 21C, the third portion 23C, and the fourth portion 24C substantially match when viewed in the second direction y.
  • the second portion 22C is connected to the end of the fourth portion 24C, and is a portion of the lead 2C that protrudes from the sealing resin 8 on the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22C protrudes on the opposite side from the first portion 21C in the second direction y.
  • the second portion 22C is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22C is bent toward the side facing the main surface 3a in the thickness direction z.
  • the lead 2A is separated from the plurality of leads 1.
  • the lead 2A is arranged on the conductive part 5.
  • the lead 2A is electrically connected to the conductive part 5.
  • the lead 2A is bonded to the wiring portion 50A of the conductive portion 5 via a conductive bonding material 29.
  • the conductive bonding material 29 may be any material that can bond and electrically connect the lead 2A to the wiring portion 50A.
  • the configuration of the lead 2A is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and includes a second portion 22A.
  • the second portion 22A is a portion of the lead 2A that protrudes from the sealing resin 8 on the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22A is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22A is bent toward the side facing the main surface 3a in the thickness direction z.
  • the lead 2B is separated from the plurality of leads 1.
  • the lead 2B is arranged on the conductive part 5.
  • the lead 2B is electrically connected to the conductive part 5. Further, the lead 2B is bonded to the wiring portion 50B of the conductive portion 5 via the above-mentioned conductive bonding material 29.
  • the configuration of the lead 2B is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and includes a second portion 22B.
  • the second portion 22B is a portion of the lead 2B that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22B is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22B is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 2D is separated from the plurality of leads 1.
  • the lead 2D is arranged on the conductive part 5.
  • the lead 2D is electrically connected to the conductive part 5. Further, the lead 2D is bonded to the wiring portion 50D of the conductive portion 5 via the above-described conductive bonding material 29.
  • the configuration of the lead 2D is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22D.
  • the second portion 22D is a portion of the lead 2D that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22D is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22D is bent toward the side facing the main surface 3a in the thickness direction z.
  • the lead 2E is separated from the plurality of leads 1.
  • the lead 2E is arranged on the conductive part 5.
  • the lead 2E is electrically connected to the conductive part 5. Further, the lead 2E is bonded to the wiring portion 50E of the conductive portion 5 via the above-mentioned conductive bonding material 29.
  • the configuration of the lead 2E is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and includes a second portion 22E.
  • the second portion 22E is a portion of the lead 2E that protrudes from the sealing resin 8 to the side opposite to the plurality of leads 1 when viewed in the y direction.
  • the second portion 22E is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22E is bent toward the side facing the main surface 3a in the thickness direction z.
  • the lead 2F is separated from the plurality of leads 1.
  • the lead 2F is arranged on the conductive part 5.
  • the lead 2F is electrically connected to the conductive part 5. Further, the lead 2F is bonded to the wiring portion 50F of the conductive portion 5 via the above-mentioned conductive bonding material 29.
  • the configuration of the lead 2F is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22F.
  • the second portion 22F is a portion of the lead 2F that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22F is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22F is bent toward the side facing the main surface 3a in the thickness direction z.
  • the lead 2G is separated from the plurality of leads 1.
  • the lead 2G is arranged on the conductive part 5.
  • the lead 2G is electrically connected to the conductive part 5. Further, the lead 2G is bonded to the wiring portion 50G of the conductive portion 5 via the above-described conductive bonding material 29.
  • the configuration of the lead 2G is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and includes a second portion 22G.
  • the second portion 22G is a portion of the lead 2G that protrudes from the sealing resin 8 on the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22G is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22G is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 2H is separated from the plurality of leads 1.
  • the lead 2H is arranged on the conductive part 5.
  • the lead 2H is electrically connected to the conductive part 5. Further, the lead 2H is bonded to the wiring portion 50H of the conductive portion 5 via the above-mentioned conductive bonding material 29.
  • the configuration of the lead 2H is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22H.
  • the second portion 22H is a portion of the lead 2H that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22H is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22H is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 2I is separated from the plurality of leads 1.
  • the lead 2I is arranged on the conductive part 5.
  • the lead 2I is electrically connected to the conductive part 5. Further, the lead 2I is bonded to the wiring portion 50I of the conductive portion 5 via the above-described conductive bonding material 29.
  • the configuration of the lead 2I is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22I.
  • the second portion 22I is a portion of the lead 2I that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22I is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22I is bent toward the side facing the main surface 3a in the thickness direction z.
  • the lead 2J is separated from the plurality of leads 1.
  • the lead 2J is arranged on the conductive part 5.
  • the lead 2J is electrically connected to the conductive part 5. Further, the lead 2J is bonded to the wiring portion 50J of the conductive portion 5 via the above-described conductive bonding material 29.
  • the configuration of the lead 2J is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22J.
  • the second portion 22J is a portion of the lead 2J that protrudes from the sealing resin 8 to the side opposite to the plurality of leads 1 when viewed in the y direction.
  • the second portion 22J is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22J is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 2K is separated from the plurality of leads 1.
  • the lead 2K is arranged on the conductive part 5.
  • the lead 2K is electrically connected to the conductive part 5. Further, the lead 2K is bonded to the wiring portion 50K of the conductive portion 5 via the above-mentioned conductive bonding material 29.
  • the configuration of the lead 2K is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22K.
  • the second portion 22K is a portion of the lead 2K that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22K is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22K is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 2L is separated from the plurality of leads 1.
  • the lead 2L is arranged on the conductive part 5.
  • the lead 2L is electrically connected to the conductive part 5. Further, the lead 2L is bonded to the wiring portion 50L of the conductive portion 5 via the above-described conductive bonding material 29.
  • the configuration of the lead 2L is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22L.
  • the second portion 22L is a portion of the lead 2L that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22L is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22L is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 2M is separated from the plurality of leads 1.
  • the lead 2M is arranged on the conductive part 5.
  • the lead 2M is electrically connected to the conductive part 5. Further, the lead 2M is bonded to the wiring portion 50M of the conductive portion 5 via the above-mentioned conductive bonding material 29.
  • the configuration of the lead 2M is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22M.
  • the second portion 22M is a portion of the lead 2M that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22M is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22M is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 2N is separated from the plurality of leads 1.
  • the lead 2N is arranged on the conductive part 5.
  • the lead 2N is electrically connected to the conductive part 5. Further, the lead 2N is bonded to the wiring portion 50N of the conductive portion 5 via the above-described conductive bonding material 29.
  • the configuration of the lead 2N is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22N.
  • the second portion 22N is a portion of the lead 2N that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22N is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22N is bent toward the side facing the main surface 3a in the thickness direction z.
  • the lead 2O is separated from the plurality of leads 1. As shown in FIG. 19, the lead 2O is arranged on the conductive part 5. The lead 2O is electrically connected to the conductive part 5. Further, the lead 2O is bonded to the wiring portion 50O of the conductive portion 5 via the above-mentioned conductive bonding material 29.
  • the configuration of the lead 2O is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and includes a second portion 22O.
  • the second portion 22O is a portion of the lead 2O that protrudes from the sealing resin 8 on the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22O is used, for example, to electrically connect the semiconductor device A2 to an external circuit.
  • the second portion 22O is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the lead 2P is separated from the plurality of leads 1. As shown in FIG. 19, the lead 2P is arranged on the conductive part 5. The lead 2P is electrically connected to the conductive part 5. Further, the lead 2P is bonded to the wiring portion 50P of the conductive portion 5 via the above-described conductive bonding material 29.
  • the configuration of the lead 2P is not particularly limited, and in this embodiment, it has the same configuration as the lead 2C and has a second portion 22P.
  • the second portion 22P is a portion of the lead 2P that protrudes from the sealing resin 8 toward the opposite side from the plurality of leads 1 in the second direction y.
  • the second portion 22P is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the leads 2Z are spaced apart from the insulating substrate 30 in plan view.
  • the leads 2Z are arranged on the x2 side of the first direction x with respect to the insulating substrate 30 in the first direction x. Further, the lead 2Z is disposed on the opposite side of the lead 2B from the lead 2A in the first direction x.
  • the structure of the lead 2Z is not particularly limited, and in the present embodiment, the lead 2Z will be described as being divided into a second part 22Z and a fourth part 24Z, as shown in FIG. Note that in this embodiment, the lead 2Z is insulated from the circuit of the semiconductor device A2.
  • the fourth part 24Z is connected to the second part 22Z and covered with the sealing resin 8. Similar to the fourth portion 24C of the lead 2C, the fourth portion 24Z is positioned to be shifted toward the side facing the main surface 3a from the first portion 21A in the thickness direction z.
  • the shape of the fourth portion 24Z is not particularly limited, and in the illustrated example, it has a band shape extending in the second direction y.
  • the second portion 22Z is connected to the end of the fourth portion 24Z and is a portion of the lead 2Z that protrudes from the sealing resin 8.
  • the second portion 22Z protrudes on the opposite side from the fourth portion 24Z in the y direction.
  • the second portion 22Z is used, for example, when mounting the semiconductor device A2 on an external circuit board.
  • the second portion 22Z is bent toward the side toward which the main surface 3a faces in the thickness direction z.
  • the plurality of semiconductor elements 4A to 4F are arranged on the plurality of leads 1 and are switching elements. Each of the plurality of semiconductor elements 4A to 4F is supported by one of the first portions 11A, 11B, 11C, and 11D of the plurality of leads 1. In the illustrated example, six semiconductor elements 4A to 4F are provided, but this is just an example, and the number of semiconductor elements is not limited at all.
  • the semiconductor elements 4A to 4F are, for example, MOSFETs (SiC MOSFETs (metal-oxide-semiconductor field-effect transistors)) made of a SiC (silicon carbide) substrate.
  • MOSFETs SiC MOSFETs (metal-oxide-semiconductor field-effect transistors)
  • SiC silicon carbide
  • the semiconductor elements 4A to 4F may be MOSFETs using a Si (silicon) substrate instead of the SiC substrate, and may include, for example, IGBT elements.
  • a MOSFET containing GaN may be used.
  • N-type MOSFETs are used for each of the semiconductor elements 4A to 4F.
  • the same MOSFET is used in each of the semiconductor elements 4A to 4F of this embodiment.
  • the semiconductor element 4A will be explained as an example, and the explanation of the other semiconductor elements 4B to 4F will be omitted.
  • the semiconductor element 4A is placed on the first portion 11A of the lead 1A.
  • the semiconductor element 4A has a gate electrode GP, a source electrode SP, and a drain electrode DP.
  • the source electrode SP and the gate electrode GP are arranged on a surface of the semiconductor element 4A that faces the same side as the first surface 111A (element main surface).
  • the drain electrode DP is formed on the surface of the semiconductor element 4A that faces the first surface 111A (the back surface of the element).
  • the gate electrode GP and the source electrode SP are made of, for example, Al or an Al alloy (Al-Si, Al-Cu, Al-Si-Cu, etc.).
  • the drain electrode DP is made of, for example, Al or an Al alloy (Al--Si, Al--Cu, Al--Si--Cu, etc.).
  • the shapes and sizes of the gate electrode GP, source electrode SP, and drain electrode DP are not particularly limited.
  • the source electrode SP is larger than the gate electrode GP in plan view.
  • the gate electrode GP is arranged on the y1 side in the second direction y from the center of the semiconductor element 4A in the second direction y in plan view.
  • the source electrode SP has a portion located on one side of the gate electrode GP in the second direction y and on both sides of the first direction x. Note that the position of the gate electrode GP with respect to the source electrode SP is not particularly limited. Further, the gate electrode GP may be formed in a square shape.
  • the source electrode SP has a recessed portion on the side on the y1 side in the second direction y when viewed from above, and the gate electrode GP is disposed within the recessed portion.
  • three semiconductor elements 4A, 4B, and 4C are arranged on the first surface 111A of the first portion 11A of the lead 1A.
  • the three semiconductor elements 4A, 4B, and 4C are spaced apart from each other in the first direction x, and overlap each other when viewed in the first direction x.
  • the drain electrodes DP of the semiconductor elements 4A, 4B, and 4C are bonded to the first surface 111A by a conductive bonding material 481.
  • the conductive bonding material 481 may be any material that can bond and electrically connect the drain electrodes DP of the semiconductor elements 4A, 4B, and 4C to the first surface 111A.
  • the semiconductor element 4D is arranged on the first surface 111B of the first portion 11B of the lead 1B.
  • the drain electrode DP of the semiconductor element 4D is bonded to the first surface 111B by the conductive bonding material 481 described above.
  • the semiconductor element 4E is arranged on the first surface 111C of the first portion 11C of the lead 1C.
  • the drain electrode DP of the semiconductor element 4E is bonded to the first surface 111C using the conductive bonding material 481 described above.
  • the semiconductor element 4F is arranged on the first surface 111D of the first portion 11D of the lead 1D.
  • the drain electrode DP of the semiconductor element 4F is bonded to the first surface 111D using the conductive bonding material 481 described above.
  • the control elements 4G and 4H are for controlling the driving of at least one of the semiconductor elements 4A to 4F. As shown in FIG. 19, the control elements 4G and 4H are electrically connected to the conductive portion 5 and at least one of the semiconductor elements 4A to 4F, and are arranged on the insulating substrate 30. In this embodiment, the control element 4G controls the driving of three semiconductor elements 4A, 4B, and 4C. The control element 4H controls the driving of the three semiconductor elements 4D, 4E, and 4F.
  • the shapes and sizes of the control elements 4G and 4H are not particularly limited. In the illustrated example, the control elements 4G and 4H have a rectangular shape in plan view, and are elongated rectangular shapes whose longitudinal direction is the first direction x.
  • control element 4G is mounted on the first base portion 55 of the conductive portion 5. Further, the control element 4H is arranged on the second base portion 56 of the conductive portion 5. In this embodiment, the control element 4G is bonded to the first base portion 55 by a conductive bonding material 482. The control element 4H is bonded to the second base 56 by a conductive bonding material 482.
  • the conductive bonding material 482 may be any material that can bond the control element 4G to the first base 55 and bond and electrically connect the control element 4H to the second base 56.
  • As the conductive bonding material 482 for example, silver paste, copper paste, solder, or the like is used.
  • the specific shape of the conductive bonding material 482 is not limited at all. Note that the control element 4G and the control element 4H may be joined to the first base 55 and the second base 56 by an insulating joint material instead of the conductive joint material 482.
  • the control element 4G is located between the leads 2B to 2N and the leads 1A to 1G when viewed in the first direction x. Further, the control element 4H is located between the leads 2B to 2N and the leads 1A to 1G when viewed in the first direction x.
  • the control element 4G overlaps the semiconductor element 4B when viewed in the second direction y. Furthermore, in the illustrated example, the control element 4G overlaps the semiconductor element 4A when viewed in the second direction y.
  • the control element 4H overlaps the semiconductor element 4E when viewed in the second direction y.
  • the control element 4G may overlap the semiconductor element 4C when viewed in the second direction y.
  • the control element 4H may overlap one or both of the semiconductor elements 4D and 4F when viewed in the second direction y.
  • the control element 4G overlaps the wiring portion 50B, the wiring portion 50C, the wiring portion 50V, and the wiring portion 50W when viewed in the second direction y. Moreover, the control element 4G overlaps with the second base 56 and the control element 4H when viewed in the first direction x. The control element 4H overlaps with the wiring section 50I, the wiring section 50J, the wiring section 50K, and the wiring section 50L when viewed in the second direction y. Furthermore, the control element 4H overlaps the wiring portion 50O and the wiring portion 50P when viewed in the first direction x.
  • the electronic components 49U, 49V, and 49W are electrically connected to the control element 4G.
  • the electronic components 49U, 49V, and 49W are, for example, diodes, and function as so-called boot diodes for applying a higher voltage to the control element 4G.
  • the electronic component 49U is bonded to the wiring portion 50U of the conductive portion 5 via a conductive bonding material 483.
  • the conductive bonding material 483 is made of, for example, the same material as the conductive bonding material 482 described above.
  • the electronic component 49V is bonded to the wiring portion 50V of the conductive portion 5 via the conductive bonding material 483 described above.
  • the electronic component 49W is bonded to the wiring portion 50W of the conductive portion 5 via the conductive bonding material 483 described above.
  • the specific arrangement of the electronic components 49U, 49V, and 49W is not particularly limited. As shown in FIGS. 19 and 20, in the illustrated example, the center of the electronic component 49U in the second direction y is shifted toward the y1 side in the second direction y from the center of the wiring section 50U in the second direction y. There is. Further, the center of the electronic component 49V in the first direction x is shifted toward the wiring portion 50W from the center of the wiring portion 50V in the first direction x. Further, the center of the electronic component 49W in the first direction x is shifted toward the wiring portion 50D from the center of the wiring portion 50W in the first direction x.
  • the plurality of wires 75A to 75F are connected to one of the semiconductor elements 4A to 4F and one of the plurality of leads 1.
  • the material of the wires 75A to 75F is not particularly limited, and may be made of aluminum (Al) or copper (Cu), for example.
  • the wire diameters of the wires 75A to 75F are not particularly limited, and are, for example, about 250 to 500 ⁇ m. Note that instead of the wires 75A to 75F, leads made of Cu, for example, may be used.
  • one end of the wire 75A is connected to the source electrode SP of the semiconductor element 4A, and the other end is connected to the fourth portion 14B of the lead 1B.
  • the position where the wire 75A is joined is not particularly limited.
  • one end of the wire 75B is connected to the source electrode SP of the semiconductor element 4B, and the other end is connected to the fourth portion 14C of the lead 1C.
  • the position where the wire 75B is joined is not particularly limited.
  • one end of the wire 75C is connected to the source electrode SP of the semiconductor element 4C, and the other end is connected to the fourth portion 14D of the lead 1D.
  • the position where the wire 75C is joined is not particularly limited.
  • one end of the wire 75D is connected to the source electrode SP of the semiconductor element 4D, and the other end is connected to the fourth portion 14E of the lead 1E.
  • the position where the wire 75D is joined is not particularly limited.
  • one end of the wire 75E is connected to the source electrode SP of the semiconductor element 4E, and the other end is connected to the fourth portion 14F of the lead 1F.
  • the position where the wire 75E is bonded is not particularly limited.
  • one end of the wire 75F is connected to the source electrode SP of the semiconductor element 4F, and the other end is connected to the fourth portion 14G of the lead 1G.
  • the position where the wire 75F is joined is not particularly limited.
  • the plurality of wires 76 are connected to either the control element 4G or the control element 4H.
  • the material of the wire 76 is not particularly limited, and is made of, for example, gold (Au), silver (Ag), copper (Cu), aluminum (Al), or the like.
  • the wire diameter of the wire 76 is not particularly limited, and in this embodiment, it is thinner than the wire diameters of the wires 75A to 75F.
  • the wire diameter of the wire 76 is, for example, about 10 ⁇ m to 50 ⁇ m.
  • the wire 76 connected to the control element 4G will be referred to as a wire 76G
  • the wire 76 connected to the control element 4H will be referred to as a wire 76H.
  • a wire 76G is connected to the gate electrode GP of the semiconductor element 4A and a portion of the control element 4G closer to the first portion 11A than the center in the second direction y. Further, a wire 76G is connected to the source electrode SP of the semiconductor element 4A and a portion of the control element 4G closer to the first portion 11A than the center in the second direction y.
  • a wire 76G is connected to the gate electrode GP of the semiconductor element 4B and a portion of the control element 4G closer to the first portion 11A than the center in the second direction y. Further, a wire 76G is connected to the source electrode SP of the semiconductor element 4B and a portion of the control element 4G closer to the first portion 11A than the center in the second direction y.
  • a wire 76G is connected to the gate electrode GP of the semiconductor element 4C and a portion of the control element 4G closer to the first portion 11A than the center in the second direction y. Further, a wire 76G is connected to the source electrode SP of the semiconductor element 4C and a portion of the control element 4G closer to the first portion 11A than the center in the second direction y.
  • a wire 76H is connected to the gate electrode GP of the semiconductor element 4D and a portion of the control element 4H closer to the first portion 11A than the center in the second direction y.
  • a wire 76H is connected to the gate electrode GP of the semiconductor element 4E and a portion of the control element 4H closer to the first portion 11A than the center in the second direction y.
  • a wire 76H is connected to the gate electrode GP of the semiconductor element 4F and a portion of the control element 4H closer to the first portion 11A than the center in the second direction y.
  • one end of the two wires 76G is connected to the wiring section 50A, and the other end is connected to the control element 4G. Further, one end of the wire 76G is connected to the electronic component 49U, and the other end is connected to the control element 4G. Further, one end of the wire 76G is connected to the wiring section 50U, and the other end is connected to the control element 4G.
  • one end of the two wires 76G is connected to the wiring section 50B, and the other end is connected to the control element 4G. Further, one end of the wire 76G is connected to the electronic component 49V, and the other end is connected to the control element 4G. Further, one end of the wire 76G is connected to the wiring section 50V, and the other end is connected to the control element 4G.
  • one end of the two wires 76G is connected to the wiring section 50C, and the other end is connected to the control element 4G. Further, one end of the wire 76G is connected to the electronic component 49W, and the other end is connected to the control element 4G. Further, one end of the wire 76G is connected to the wiring section 50W, and the other end is connected to the control element 4G.
  • one end of the wire 76G is connected to the wiring section 50D, and the other end is connected to the control element 4G. Further, one end of the wire 76G is connected to the wiring section 50E, and the other end is connected to the control element 4G. Further, one end of the wire 76G is connected to the wiring section 50F, and the other end is connected to the control element 4G. Further, one end of the three wires 76G is connected to the wiring section 50G, and the other end is connected to the control element 4G. Further, one end of the two wires 76G is connected to the connecting portion 57, and the other end is connected to the control element 4G.
  • one end of the wire 76H is connected to the wiring section 50I, and the other end is connected to the control element 4H. Further, one end of the wire 76H is connected to the wiring section 50J, and the other end is connected to the control element 4H. Further, one end of the wire 76H is connected to the wiring section 50K, and the other end is connected to the control element 4H. Further, one end of the two wires 76H is connected to the wiring portion 50L, and the other end is connected to the control element 4H. Further, one end of the wire 76H is connected to the wiring section 50M, and the other end is connected to the control element 4H. Further, one end of the two wires 76H is connected to the wiring section 50N, and the other end is connected to the control element 4H.
  • the thermistor 6 is a temperature detection element, and is mounted on the main surface 3a of the insulating substrate 30.
  • the thermistor 6 is a resistor whose electrical resistance changes largely with respect to temperature changes, and the voltage between the terminals changes as the resistance value changes depending on the ambient temperature. Based on the voltage between the terminals of the thermistor 6, the temperature around the thermistor 6 is detected. Note that the characteristics of the thermistor 6 are not limited.
  • the thermistor 6 may be an NTC (negative temperature coefficient) thermistor, a PTC (positive temperature coefficient) thermistor, or a thermistor having other characteristics.
  • the thermistor 6 is for detecting the temperature of the semiconductor device A2. As shown in FIGS. 19 and 22, the thermistor 6 is arranged across two pad-like portions 502O and 502P of the conductive portion 5 (wiring portion 50O and wiring portion 50P). The thermistor 6 is bonded to the pad portion 502 via a conductive bonding material 63.
  • the conductive bonding material 63 may be any material that can bond the thermistor 6 to the pad-shaped portions 502O, 502P and electrically connect the thermistor 6 and the pad-shaped portions 502O, 502P.
  • As the conductive bonding material 63 for example, silver paste, copper paste, solder, or the like is used.
  • the conductive bonding material 63 is an example of the "first conductive bonding material" of the present disclosure.
  • the two pad-shaped portions 502O and 502P (wiring portion 50O and wiring portion 50P) are electrically connected to the two leads 2O and 2P.
  • the pad-like portions 502O and 502P (wiring portion 50O and wiring portion 50P) are conduction paths that connect the thermistor 6 and the leads 2O and 2P.
  • the two leads 2O and 2P serve as terminals for detecting the temperature of the semiconductor device A2, and output the voltage between the terminals of the thermistor 6.
  • the semiconductor device A2 includes an insulating member 62.
  • the insulating member 62 is interposed between the main surface 3a of the insulating substrate 30 and the thermistor 6, and has electrical insulation properties.
  • the insulating member 62 is an underfill filled between the main surface 3a and the thermistor 6 in the thickness direction z.
  • the constituent material of the insulating member 62 is not particularly limited, and is, for example, a synthetic resin whose main ingredient is black epoxy resin.
  • the thermistor 6 is placed close to any one of the plurality of semiconductor elements 4A to 4F. As shown in FIG. 19, the thermistor 6 is arranged on the insulating substrate 30 on the x1 side in the first direction x and on the y1 side in the second direction y. In the first direction x, the thermistor 6 is arranged at a distance from the control element 4H on the x1 side in the first direction x. In the illustrated example, the thermistor 6 is closest to the semiconductor element 4F located at the end on the x1 side in the first direction x among the semiconductor elements 4A to 4F.
  • the semiconductor device A2 may include another temperature detection element instead of the thermistor 6.
  • Other possible temperature detection elements include semiconductor temperature sensors.
  • the semiconductor temperature sensor is a Si diode or the like whose forward voltage changes greatly with respect to temperature changes, and the ambient temperature is detected based on the voltage between terminals when a predetermined current is passed through the semiconductor temperature sensor.
  • the sealing resin 8 seals the semiconductor elements 4A to 4F, the control elements 4G and 4H, the conductive part 5, the thermistor 6, a portion of each of the plurality of leads 1, a portion of each of the plurality of leads 2, and a portion of the insulating substrate 30. covering at least the area. Further, in this embodiment, the sealing resin 8 covers the electronic components 49U, 49V, 49W, the plurality of wires 75A to 75F, and the plurality of wires 76.
  • the constituent material of the sealing resin 8 is not particularly limited, and insulating materials such as epoxy resin and silicone gel may be used as appropriate.
  • it has a resin main surface 81, a resin back surface 82, a plurality of resin side surfaces 83 to 86, a recess 810, a recess 820, a recess 831, a recess 832, a recess 833, and a recess 834.
  • the main resin surface 81 is a plane that intersects with the thickness direction z, and in the illustrated example, is a plane that is perpendicular to the thickness direction z.
  • the main resin surface 81 faces the same side as the main surface 3a of the insulating substrate 30.
  • the resin back surface 82 is a surface that intersects with the thickness direction z, and in the illustrated example, is a plane that is perpendicular to the thickness direction z.
  • the resin back surface 82 faces the opposite side to the resin main surface 81 and faces the same side as the back surface 3b of the insulating substrate 30.
  • the resin side surface 83 is located between the resin main surface 81 and the resin back surface 82 in the thickness direction z, and is connected to the resin main surface 81 and the resin back surface 82 in the illustrated example.
  • the resin back surface 82 is a surface that intersects the first direction x, and faces the x1 side of the first direction x.
  • the resin side surface 84 is located between the resin main surface 81 and the resin back surface 82 in the thickness direction z, and is connected to the resin main surface 81 and the resin back surface 82 in the illustrated example.
  • the resin side surface 84 is a surface that intersects the first direction x, faces opposite to the resin side surface 83, and faces the x2 side of the first direction x.
  • the resin side surface 85 is located between the resin main surface 81 and the resin back surface 82 in the thickness direction z, and is connected to the resin main surface 81 and the resin back surface 82 in the illustrated example.
  • the resin side surface 85 is a surface that intersects the second direction y, and faces the y1 side of the second direction y.
  • the resin side surface 86 is located between the resin main surface 81 and the resin back surface 82 in the thickness direction z, and is connected to the resin main surface 81 and the resin back surface 82 in the illustrated example.
  • the resin side surface 86 is a surface that intersects the second direction y, faces opposite to the resin side surface 85, and faces the y2 side of the second direction y.
  • the recessed portion 810 is a portion recessed from the resin side surface 83 toward the x2 side in the first direction x.
  • the recess 810 reaches the resin main surface 81 and the resin back surface 82.
  • the recessed portion 820 is a portion recessed from the resin side surface 84 toward the x1 side in the first direction x.
  • the recess 820 reaches the resin main surface 81 and the resin back surface 82.
  • the recesses 831, 832, 833, and 834 are recessed portions from the resin side surface 85 toward the y2 side in the second direction y.
  • the recess 831 is located between the second portion 22Z of the lead 2Z and the second portion 22A of the lead 2A when viewed in the second direction y.
  • the recess 832 is located between the second portion 22A of the lead 2A and the second portion 22B of the lead 2B when viewed in the second direction y.
  • the recess 833 is located between the second portion 22B of the lead 2B and the second portion 22C of the lead 2C when viewed in the second direction y.
  • the recess 834 is located between the second portion 22C of the lead 2C and the second portion 22D of the lead 2D when viewed in the second direction y.
  • each semiconductor element 4A to 4C are connected to each other and to a P terminal (lead 1A).
  • the source of the semiconductor element 4A is connected to the drain of the semiconductor element 4D
  • the source of the semiconductor element 4B is connected to the drain of the semiconductor element 4E
  • the source of the semiconductor element 4C is connected to the drain of the semiconductor element 4F.
  • a connection point between the source of the semiconductor element 4A and the drain of the semiconductor element 4D is connected to the U terminal (lead 1B).
  • a connection point between the source of the semiconductor element 4B and the drain of the semiconductor element 4E is connected to the V terminal (lead 1C).
  • a connection point between the source of the semiconductor element 4C and the drain of the semiconductor element 4F is connected to the W terminal (lead 1D).
  • the source of the semiconductor element 4D is connected to the NU terminal (lead 1E)
  • the source of the semiconductor element 4E is connected to the NV terminal (lead 1F)
  • the source of the semiconductor element 4F is connected to the NW terminal (lead 1G). ing.
  • the voltage levels applied to the U terminal (lead 1B), the V terminal (lead 1C), and the W terminal (lead 1D) are, for example, about 0V to 650V.
  • the voltage level applied to the NU terminal (lead 1E), NV terminal (lead 1F) and NW terminal (lead 1G) is, for example, about 0V
  • Semiconductor elements 4A to 4C constitute transistors on the high potential side of a three-phase inverter circuit
  • semiconductor elements 4D to 4F constitute transistors on the low potential side of the three-phase inverter circuit.
  • the gates of the semiconductor elements 4A to 4C are each connected to the control element 4G, and the sources of the semiconductor elements 4A to 4C are each connected to the control element 4G.
  • the gates of semiconductor elements 4D to 4F are each connected to control element 4H.
  • the control element 4G is electrically connected to the leads 2A, 2B, 2C, 2D, 2E, 2F, 2G, and 2H.
  • Lead 2D is a terminal for supplying power supply voltage VCC to control element 4G.
  • a gate signal voltage is applied to the leads 2E, 2F, and 2G from an external gate drive circuit (not shown).
  • the control element 4G is a circuit for applying these gate signal voltages to the gates of the semiconductor elements 4A to 4C.
  • the leads 2H and 2N are connected to each other inside the semiconductor device A2, more specifically at the conductive portion 5 on the insulating substrate 30.
  • the control element 4H is electrically connected to the lead 2I, lead 2J, lead 2K, lead 2L, lead 2M, and lead 2N.
  • Lead 2L is a terminal for supplying power supply voltage VCC to control element 4H.
  • a gate signal voltage is applied to lead 2I, lead 2J, and lead 2K from an external gate drive circuit.
  • the control element 4H is a circuit for applying these gate signal voltages to the gates of the semiconductor elements 4D to 4F.
  • the first voltage of the electrical signal applied to lead 2E, lead 2F, and lead 2G is lower than the second voltage (power supply voltage VCC) applied from lead 2D to drive control element 4G. Furthermore, the first voltage of the electrical signal applied to lead 2I, lead 2J, and lead 2K is lower than the second voltage (power supply voltage VCC) applied from lead 2L to drive control element 4H.
  • the semiconductor device A2 includes an insulating substrate 30, semiconductor elements 4A to 4F, a conductive portion 5 made of a conductive material, a thermistor 6, and a sealing resin 8.
  • the insulating substrate 30 has a main surface 3a and a back surface 3b, and the conductive part 5 is formed on the main surface 3a.
  • the thermistor 6 is bonded to the conductive portion 5 (pad-shaped portions 502O, 502P of the wiring portions 50O, 50P) via a conductive bonding material 63. According to such a configuration, the thermistor 6 is mounted on the main surface 3a of the insulating substrate 30 via the conductive portion 5 (pad-like portions 502O, 502P of the wiring portions 50O, 50P).
  • the conductive part 5 can be made thinner than the leads 1 (leads 1A to 1D) on which the semiconductor elements 4A to 4F are mounted, thereby reducing the stress generated in the thermistor 6 when the semiconductor elements 4A to 4F generate heat. can be reduced. As a result, it is possible to improve the durability of the thermistor 6 and to appropriately detect the temperature of the semiconductor device A2. Furthermore, in the configuration in which the thermistor 6 is mounted on the conductive part 5, the sensitivity of temperature detection on the insulating substrate 30 side can be improved compared to, for example, a case in which the thermistor 6 is disposed on the thick lead 1. can. Further, the back surface 3b of the insulating substrate 30 is exposed from the sealing resin 8. According to such a configuration, the heat transmitted from the semiconductor elements 4A to 4F to the insulating substrate 30 can be efficiently released to the outside from the back surface 3b, and the heat dissipation performance of the semiconductor device A2 is improved.
  • the thermistor 6 is placed close to any one of the plurality of semiconductor elements 4A to 4F. According to such a configuration, the temperature of the semiconductor device A2 (on the insulating substrate 30 side) due to the influence of heat generation of the entire plurality of semiconductor elements 4A to 4F can be appropriately detected.
  • the thermistor 6 is closest to the semiconductor element 4F located at the end on the x1 side in the first direction x among the semiconductor elements 4A to 4F. According to such a configuration, the thermistor 6 can be efficiently arranged on the insulating substrate 30.
  • the leads 1A to 1D are bonded to a bonding portion 58 (bonding portions 58A to 58D) via a bonding material 17.
  • Joint portion 58 includes the same conductive material as conductive portion 5 . According to such a configuration, it is possible to form the conductive portion 5 and the bonding portion 58 on the insulating substrate 30 all at once. This is preferable for improving the manufacturing efficiency of the semiconductor device A2.
  • the semiconductor device A2 of this embodiment includes an insulating member 62.
  • the insulating member 62 is filled between the main surface 3a of the insulating substrate 30 and the thermistor 6. According to such a configuration, after the sealing resin 8 is formed, it is possible to prevent the inconvenience that a gap is generated in a relatively narrow gap between the main surface 3a and the thermistor 6. Thereby, the temperature of the semiconductor device A2 (insulating substrate 30 side) can be detected stably and accurately by the thermistor 6.
  • a cooler 91, a mounting member 92, a control means 94, a cooling means 95, a heating means 96, etc. are further provided. It is possible to employ a configuration of a semiconductor device assembly including the following. In this case, the same effects as described above regarding the semiconductor device assembly B1 are achieved.
  • the semiconductor device according to the present disclosure is not limited to the embodiments described above.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be changed in design in various ways.
  • the present disclosure includes configurations related to the following additional notes.
  • a support having a main surface facing one side in the thickness direction and a back surface facing the opposite side to the main surface; at least one semiconductor element disposed on the main surface; a conductive part made of a conductive material formed on the main surface; a temperature detection element disposed on the conductive part; A sealing resin that covers at least a portion of the support, the at least one semiconductor element, the temperature detection element, and the conductive part,
  • the support body includes an insulating substrate having the main surface, The temperature detection element is bonded to the conductive part via a first conductive bonding material, The semiconductor device, wherein the back surface is exposed from the sealing resin.
  • the semiconductor device comprising a plurality of the semiconductor elements, The semiconductor device according to supplementary note 1, wherein the temperature detection element is arranged close to any one of the plurality of semiconductor elements.
  • Appendix 3 The plurality of semiconductor elements are arranged side by side in a first direction perpendicular to the thickness direction, The semiconductor device according to supplementary note 2, wherein the temperature detection element is arranged corresponding to the semiconductor element located at the end in the first direction among the plurality of semiconductor elements.
  • the plurality of semiconductor elements include a first semiconductor element located at one side end in the first direction, and a position closest to the first semiconductor element on the other side in the first direction with respect to the first semiconductor element.
  • a second semiconductor element arranged;
  • the second semiconductor element is located on one side of the first semiconductor element in a second direction perpendicular to the thickness direction and the first direction,
  • the semiconductor device according to appendix 3 wherein the temperature detection element is arranged in a region overlapping the first semiconductor element when viewed in the second direction and overlapping the second semiconductor element when viewed in the second direction.
  • Appendix 5 The plurality of semiconductor elements are arranged side by side in a first direction perpendicular to the thickness direction,
  • the semiconductor device according to appendix 2 wherein the temperature detection element is closest to the semiconductor element located at the end in the first direction among the plurality of semiconductor elements.
  • Appendix 6. Also equipped with multiple leads, the support body is made of the insulating substrate, the plurality of leads include at least one first lead, 6.
  • Appendix 11. The semiconductor device according to any one of appendices 1 to 10, wherein the insulating substrate is made of ceramics.
  • Appendix 12. The semiconductor device according to any one of appendices 1 to 11, wherein the temperature detection element is a thermistor.
  • Appendix 13. The semiconductor device according to any one of appendices 1 to 12, wherein the at least one semiconductor element is a switching element. Appendix 14.
  • Each of the at least one semiconductor element has an element main surface facing one side in the thickness direction, an element back surface facing the other side in the thickness direction, and a source electrode and a gate electrode disposed on the element main surface. and a drain electrode disposed on the back surface of the element.
  • Appendix 15. A semiconductor device according to any one of Supplementary Notes 1 to 14; a cooler having a portion that contacts the back surface; cooling means for cooling the cooler; A semiconductor device assembly comprising: control means for controlling the cooling means based on the temperature detected by the temperature detection element. Appendix 16. Further comprising heating means for heating the cooler, 16. The semiconductor device assembly according to appendix 15, wherein the control means controls the heating means based on the temperature detected by the temperature detection element.
  • A1, A11, A12, A2 Semiconductor device B1: Semiconductor device assembly 1, 11 to 15, 1A to 1G, 1Z: Leads 17, 18: Bonding material 19: Conductive bonding material 2, 21 to 23, 2A to 2P, 2Z: Leads 28, 29: Conductive bonding material 3: Support body 3a: Main surface 3b: Back surface 30, 31: Insulating substrate 30A, 30B: Region 32: Support conductor 33: Metal layer 4, 4A to 4F, 40A to 40F : Semiconductor elements 4G, 4H: Control element 41: Element main surface 42: Element back surface 43: Source electrode 44: Gate electrode 45: Drain electrode 47, 481 to 483: Conductive bonding material 49U, 49V, 49W: Electronic component 5: Conductive parts 501, 50A to 50P, 50U to 50W: Wiring part 502: Pad part 502O, 502P: Pad-shaped parts 511 to 514: Joint part 55: First base part 56: Second base part 57: Connection part 58, 58

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154720A (ja) * 1997-11-20 1999-06-08 Fuji Electric Co Ltd インバータ
JP2007013019A (ja) * 2005-07-04 2007-01-18 Ricoh Co Ltd 電子部品実装体の製造方法、電子部品実装体、二次電池の保護回路モジュール及び電池パック
JP2013201325A (ja) * 2012-03-26 2013-10-03 Semiconductor Components Industries Llc 回路装置
JP2018082069A (ja) * 2016-11-17 2018-05-24 三菱電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154720A (ja) * 1997-11-20 1999-06-08 Fuji Electric Co Ltd インバータ
JP2007013019A (ja) * 2005-07-04 2007-01-18 Ricoh Co Ltd 電子部品実装体の製造方法、電子部品実装体、二次電池の保護回路モジュール及び電池パック
JP2013201325A (ja) * 2012-03-26 2013-10-03 Semiconductor Components Industries Llc 回路装置
JP2018082069A (ja) * 2016-11-17 2018-05-24 三菱電機株式会社 半導体装置および半導体装置の製造方法

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