WO2024017303A1 - 匀气装置及半导体工艺设备 - Google Patents

匀气装置及半导体工艺设备 Download PDF

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Publication number
WO2024017303A1
WO2024017303A1 PCT/CN2023/108197 CN2023108197W WO2024017303A1 WO 2024017303 A1 WO2024017303 A1 WO 2024017303A1 CN 2023108197 W CN2023108197 W CN 2023108197W WO 2024017303 A1 WO2024017303 A1 WO 2024017303A1
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WIPO (PCT)
Prior art keywords
air
channels
disk
equalization
channel
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PCT/CN2023/108197
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English (en)
French (fr)
Inventor
魏景峰
朱磊
陈平
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北京北方华创微电子装备有限公司
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Publication of WO2024017303A1 publication Critical patent/WO2024017303A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Definitions

  • the present invention relates to the field of semiconductor manufacturing, and in particular, to a gas leveling device and semiconductor process equipment.
  • the atomic layer deposition (ALD) process has the advantages of self-limiting periodic growth, excellent film quality, and excellent step coverage, and can be used to deposit Al 2 O 3 , H f O , H f ZrO, TaN, TiN, TaO, W, etc. thin films, and are suitable for most IC fields, such as logic devices, DRAM, 3D nand, etc.
  • the air intake is required to be uniform and rapid.
  • two different reaction gases are required to enter the reaction chamber alternately through the air inlet channel and then through the gas uniformity device, and then reach the wafer surface for ALD.
  • the reaction produces a thin film.
  • particles are easily generated in the gas path of the gas equalization device. If these particles are carried to the wafer surface by the gas, they will cause crystal damage.
  • the film particles on the round surface exceed the standard. Therefore, it is required that the two reaction gases must enter the reaction chamber along different gas paths in the gas equalization device to minimize the probability of the two reaction gases converging. That is, the gas uniformity device is required to be able to transport
  • the gas paths of two different process gases are isolated from each other and have functions such as gas uniformity and rapid air intake.
  • the air equalization device is an integrally processed part, that is, it is difficult to process long deep holes, dense holes, etc. that constitute the air path on an integral structure, and particulate matter is easily generated and left in the air equalization device during the processing.
  • the cleanliness of the gas uniformity device is poor, and due to the small gaps in each gas path, processing errors and processing deviations are prone to occur, resulting in poor process repeatability of different process equipment.
  • the present invention aims to solve at least one of the technical problems existing in the prior art. It proposes an air equalization device and semiconductor process equipment, which can not only reduce the processing difficulty and improve the cleanliness, but also improve the air equalization effect and air intake efficiency. .
  • a gas leveling device which is applied to semiconductor process equipment and includes a first gas leveling disk, a second gas leveling disk and a third gas leveling disk that are sequentially arranged along the air inlet direction, wherein the A first air inlet hole is provided in the center of the first air evening disk, and a second air inlet hole is provided in the center of the second air equalizing disk. There is a passage between the first air inlet hole and the second air inlet hole.
  • the isolation pieces are isolated from each other;
  • a plurality of first air distribution channels symmetrically distributed with respect to the center of the first air distribution disc are formed between the first air distribution disk and the second air distribution disk, and each of the first air distribution channels The air inlet ends are all connected with the first air inlet;
  • the second air equalization disk is provided with a plurality of connecting channels, and the air inlet end of each connecting channel is connected to the air outlet end of each of the first air equalizing channels in one-to-one correspondence;
  • a plurality of second air distribution channels and a plurality of third air distribution channels are provided between the second air distribution disc and the third air distribution disc, and the plurality of second air distribution channels and the plurality of said air distribution channels are
  • the third air equalization channels are all symmetrically distributed relative to the center of the first air equalization disk and isolated from each other;
  • each connecting channel is connected to each of the second air equalization channels in a one-to-one correspondence; a plurality of first air equalization channels are provided on the third air equalization disk corresponding to each of the second air equalization channels.
  • Air outlet holes, the air inlet end of each first air outlet hole is connected with the corresponding second air equalizing channel, and the air outlet end of each first air outlet hole is located on the third air equalizing plate away from the third air equalizing plate.
  • the air inlet ends of the plurality of third air equalization channels are all connected with the second air inlet.
  • a plurality of third air equalization channels are provided on the third air equalization disk corresponding to each of the third air equalization channels.
  • Two air outlets, the air inlet end of each second air outlet is connected to the corresponding third air equalization channel, and each second air outlet The air outlet end is located on the surface of the third air distribution disc facing away from the second air distribution disc.
  • a first sealing structure and a second sealing structure are provided between the first air distribution disk and the second air distribution disk, wherein the first sealing structure surrounds a plurality of the first uniformity disks.
  • the surrounding area of the air channel is used to seal a plurality of the first air equalization channels;
  • the first air distribution disk and the second air distribution disk are fixedly connected through a plurality of first fasteners, and the plurality of first fasteners are arranged outside the first sealing structure; the third The two sealing structures are used to isolate the through hole of the first fastener in the first air distribution disk from the space between the first air distribution disk and the second air distribution disk.
  • the first equalization disk is divided into multiple installation areas outside the first sealing structure, and the plurality of installation areas are symmetrically distributed relative to the center of the first equalization disk; each of the At least one first fastener is provided in the installation area;
  • the second sealing structure includes a plurality of sealing members, and each of the sealing members surrounds the first fastener provided in each of the installation areas in a one-to-one correspondence.
  • a third sealing structure and a fourth sealing structure are provided between the second equalization disk and the third equalization disk, wherein the third sealing structure is used to separate each of the second equalization disks.
  • the air channel is isolated from each of the third air equalization channels;
  • the fourth sealing structure is provided around a plurality of the second air equalization channels, a plurality of the third air equalization channels and the third sealing structure , used to seal a plurality of the second air equalization channels and a plurality of the third air equalization channels;
  • the second air distribution disk and the third air distribution disk are fixedly connected through a plurality of second fasteners, and the plurality of second fasteners are located outside the fourth sealing structure and along the first
  • the two equalizing disks are arranged at circumferential intervals.
  • the third sealing structure is a closed structure formed by a sealing line extending along the extension direction of the interval between each of the second air distribution channels and each of the third air distribution channels.
  • the isolation member is a boss formed on the surface of the second air distribution disk relative to the first air distribution disk, and the boss extends toward the first air distribution disk to the In the first air inlet, and coaxially with the first air inlet hole and arranged at intervals;
  • the second air inlet hole is formed in the boss and penetrates the boss and the second air distribution disk along its axial direction.
  • each of the first gas equalization channels includes a first main channel and a plurality of first branch channels, wherein,
  • One end of the first main channel converges at a position opposite to the first air inlet, and the other end of the first main channel extends along the radial direction of the second air equalizer disk to be close to the second air inlet. at the edge of the air disc;
  • a plurality of first branch channels are distributed on both sides of the first main channel, and each first branch channel forms a first angle with the first main channel; two adjacent first branch channels All said first branch channels between the main channels are parallel to each other;
  • the air outlet end of the first branch channel is connected to the connecting channel, and the connecting channel corresponds to the center position of the corresponding second air equalizing channel.
  • each of the connection channels passes through the second air distribution disc along the axial direction of the second air distribution disc, and the size of the connection channel in the extension direction of the first branch channel is larger than the size perpendicular to the first branch channel. The size in this extension direction.
  • each of the third air distribution channels includes a second main channel and a plurality of second branch channels, wherein,
  • One end of the second main channel converges at a position opposite to the second air inlet, and the other end of the second main channel extends along the radial direction of the third equalizer disk to be close to the third equalizer. at the edge of the air disc;
  • a plurality of second branch channels are distributed on both sides of the second main channel, and each second branch channel forms a second included angle with the second main channel, and the second included angle is with the second main channel.
  • the first included angles are the same; all the second branch channels between two adjacent second main channels are parallel to each other;
  • a plurality of second air outlets are evenly distributed in the extending direction of each second branch channel.
  • each of the second air distribution channels is located between two adjacent second branch channels in a one-to-one correspondence, and is parallel to the adjacent second branch channels;
  • a plurality of the first air outlets are evenly distributed in the extending direction of each second air equalizing channel.
  • each second air equalization channel is respectively adjacent to both ends of the second air equalization channel; the outermost first air outlets corresponding to each second branch channel are The second air outlet on the edge is adjacent to one end of the second branch channel.
  • each first air outlet hole near its air outlet end is a gradually expanding hole
  • a portion of each second air outlet hole near its air outlet end is a gradually expanding hole
  • a first groove is provided on at least one of the two surfaces of the first air distribution disk and the second air distribution disk facing each other to form the first air distribution channel;
  • a second groove is provided on at least one of the two opposing surfaces of the second air distribution disk and the third air distribution disk to form the second air distribution channel; in the second air distribution disk At least one of the two opposite surfaces of the disk and the third air distribution disk is provided with a third groove, forming the third air distribution channel.
  • a flow guide convex portion is formed on the surface of the third air equalization disk opposite to the air outlet end of the second air inlet hole, and the surface of the flow guide convex portion is an arc-shaped convex surface.
  • the present invention also provides a semiconductor process equipment, including a reaction chamber and an air equalizing device arranged on the top of the reaction chamber.
  • the air equalizing device adopts the above air equalizing device provided by the present invention. Two gases are introduced into the reaction chamber independently.
  • the air equalizing device provided by the present invention adopts a split design, that is, it includes a first air equalizing disk, a second air equalizing plate and a third air equalizing plate arranged sequentially along the air inlet direction, so that the passages and holes of the three can be
  • split processing which can reduce the difficulty of processing and assembly, improve the repeatability of processing and installation, and reduce processing costs; at the same time, particles generated during the processing are not easily left in the air equalization device, thus improving cleanliness.
  • the invention provides an air leveling device with a first air inlet and a second The air inlets are respectively located at the centers of the first air equalization disk and the second air equalization plate, and the plurality of first air equalization channels, the plurality of second air equalization channels and the plurality of third air equalization channels are all relative to the first air equalization channels.
  • the symmetrical distribution of the center of the disk can realize an air path composed of a first air inlet, a plurality of first air equalizing channels, a plurality of connecting channels, and a plurality of second air equalizing channels, and a gas path composed of a second air inlet,
  • Another gas path composed of multiple third gas equalization channels can be symmetrically distributed relative to the center of the first gas uniformity disk, thereby improving the gas distribution uniformity of the two gases entering the reaction chamber through the two gas paths. , thereby improving process uniformity.
  • the semiconductor process equipment provided by the present invention can not only reduce the processing difficulty and improve the cleanliness by using the above-mentioned air equalization device provided by the present invention, but also improve the air equalization effect and air intake efficiency.
  • Figure 1 is a side view of an air leveling device provided by an embodiment of the present invention.
  • Figure 2 is a top view of an air leveling device provided by an embodiment of the present invention.
  • Figure 3A is a cross-sectional view along line A-A in Figure 2;
  • Figure 3B is a partial enlarged view of Figure 3A;
  • Figure 4A is a cross-sectional view along line B-B in Figure 2;
  • Figure 4B is a partial enlarged view of Figure 4A;
  • Figure 5A is an exploded view of the air equalization device provided by the embodiment of the present invention.
  • Figure 5B is another exploded view of the air leveling device provided by the embodiment of the present invention.
  • Figure 6A is a front view of the first air distribution disk used in the embodiment of the present invention.
  • Figure 6B is a back view of the first air distribution disk used in the embodiment of the present invention.
  • Figure 7A is a front view of the second air distribution disk used in the embodiment of the present invention.
  • Figure 7B is a back view of the second air distribution disk used in the embodiment of the present invention.
  • Figure 8A is a front view of the third air equalization disk used in the embodiment of the present invention.
  • Figure 8B is a back view of the third air distribution disk used in the embodiment of the present invention.
  • Figure 9A is a simulation analysis of the flow rate uniformity of part of the second air equalization channel used in the embodiment of the present invention. picture;
  • Figure 9B is a simulation analysis diagram of the flow rate uniformity of part of the third air equalization channel used in the embodiment of the present invention.
  • Figure 10A is a top view and a side view of an existing air leveling device
  • Figure 10B is a cross-sectional view along line G-G in Figure 10A;
  • Figure 10C is a simulation analysis diagram of the flow rate uniformity of one of the air inlet structures used in the existing air equalization device.
  • An existing gas leveling device is an integrally processed part, with two mutually isolated gas paths formed inside it for transporting two reaction gases in isolation from each other.
  • the top of the air device is provided with a first air inlet 41 and a second air inlet 42, both of which are eccentrically arranged relative to the center of the air equalizing device, and a two-layer air inlet structure is provided inside the air equalizing device.
  • the second layer The air inlet structure is shown in Figure 10B.
  • the first layer of air inlet structure is similar to the second layer of air inlet structure.
  • the outlet end of the second air inlet hole 42 is connected to the intersection of the multiple main paths 43 of the second-layer air inlet structure, so that one of the reaction gases can pass through the second inlet structure in sequence.
  • the air hole 42, each main channel 43, each branch channel 44 and the second air outlet hole 45 flow into the reaction chamber; similarly, the air outlet end of the first air inlet hole 41 is connected with the center of the main channel of the first layer of air inlet structure, so as to This allows another reaction gas to flow into the reaction chamber sequentially through the first air inlet 41, each main channel, each branch channel of the first-layer air inlet structure, and the first air outlet 47.
  • the ends of each main path and each branch path of the two-layer air inlet structure are penetrated to the outer peripheral surface of the gas equalization device, and the ends are blocked by blind plugs 46, and the gas paths are sealed by electron beam welding.
  • the above-mentioned air leveling device inevitably has the following problems in practical application, namely:
  • the air equalization device is an integrally processed part, that is, it is difficult to process long deep holes, dense holes, etc. that constitute the air path on an integral structure, and particles are easily left behind during the processing process.
  • the cleanliness of the gas uniformity device is poor, and due to the small gaps in each gas path, processing errors and processing deviations are prone to occur, resulting in poor process repeatability of different process equipment.
  • the two-layer air inlet structure is asymmetrical relative to the center of the air equalizing device, as shown in Figure 10B , the lengths of the branches located on the left and right sides of the main road intersection are different, which leads to inconsistent flow paths and gas outlet speeds of different branches, thus affecting the uniformity of gas distribution entering the reaction chamber.
  • FIG. 10C it is a simulation analysis diagram of the flow rate uniformity of the above-mentioned air equalization device. Taking the air flow rate of the air outlet into consideration, A1 to A7 and B1 to B7 in Figure 10C correspond to 7 branches in the vertical and horizontal directions respectively. By measuring the flow rate uniformity of the gas flowing from these branches to the air outlet, Simulation analysis was performed to obtain six flow rate uniformity coefficients K1 to K6. Different K respectively represent the ratio of flow or pressure of the air outlets in different branches.
  • the uniformity coefficients are relatively large. Therefore, the above-mentioned air uniformity The flow rate uniformity of the device from these branches to the air outlet is poor.
  • embodiments of the present invention provide a gas leveling device for use in semiconductor process equipment, such as ALD process equipment.
  • the gas leveling device is disposed on the top of a reaction chamber of the ALD process equipment for respectively
  • the two gases are introduced into the reaction chamber independently, that is, the two gases are isolated from each other in the gas leveling device.
  • the air distribution device provided by the embodiment of the present invention includes a first air distribution disk 1 , a second air distribution disk 1 and a second air distribution disk 1 which are sequentially arranged along the air inlet direction (for example, the vertical direction in FIG. 1 ).
  • the first air distribution disk 1 is provided with a first air inlet hole 12 in the center
  • the center of the second air distribution disk 2 is provided with a first air inlet hole 12.
  • the second air inlet hole 211, the first air inlet hole 12 and the second air inlet hole 211 are isolated from each other by the isolation member 21 to ensure that the two reaction gases
  • the first air inlet hole 12 and the second air inlet hole 211 can be passed through in isolation from each other.
  • the spacer 21 is a boss formed on the surface of the second gas distribution disk 2 relative to the first gas distribution disk 1 , and the boss is provided with a groove along its surface.
  • the second air inlet hole 211 axially penetrates the boss and the second air distribution disk 2 .
  • the first air inlet hole 12 and the second air inlet hole 211 can both be located at the center of the first air equalization disk 1 , that is, coaxial with the first air equalization disk 1 .
  • the above-mentioned boss extends toward the first air distribution plate 1 into the first air inlet 12, is coaxial with the first air inlet 12, and is spaced apart.
  • a plurality of first equalization channels 22 symmetrically distributed with respect to the center of the first equalization disc 1 are formed between the first equalization disk 1 and the second equalization disk 2.
  • the air inlet of each first equalization channel 22 is The ends are all connected with the first air inlet hole 12; the second air equalizing plate 2 is provided with a plurality of connecting channels 23, and the air inlet end of each connecting channel 23 is connected to the air outlet end of each first air equalizing channel 22 in one-to-one correspondence.
  • a plurality of second air distribution channels 31 and a plurality of third air distribution channels 33 are provided between the second air distribution disc 2 and the third air distribution disc 3, and the plurality of second air distribution channels 31 and a plurality of third air distribution channels
  • the air equalization channels 33 are all symmetrically distributed with respect to the center of the first air equalization disk 1 and isolated from each other.
  • the air outlet end of each connecting channel 23 is connected to each second air equalizing channel 31 in a one-to-one correspondence; a plurality of first air outlets 32 are provided on the third air equalizing disk 3 corresponding to each second air equalizing channel 31.
  • each first air outlet hole 32 is connected with the corresponding second air equalization channel 31 , and the air outlet end of each first air outlet hole 32 is located on the surface of the third air equalization disk 3 away from the second air equalization disk 2 .
  • the air inlet ends of the plurality of third air equalization channels 33 are all connected with the second air inlet holes 211.
  • the third air equalization disk 3 is provided with a plurality of second air outlet holes 34 corresponding to each third air equalization channel 33. , the air inlet end of each second air outlet hole 34 is connected with the corresponding third air equalization channel 33 , and the air outlet end of each second air outlet hole 34 is located on the surface of the third air equalization channel 33 away from the second air equalization plate 2 .
  • the first gas C1 when the first gas C1 is introduced, it flows into each first gas equalization channel 22 through the first air inlet hole 12 , and then flows into each second gas uniformity channel through the corresponding connecting channel 23 31, and finally flows out through each first air outlet 32.
  • the first gas C1 achieves a secondary gas equalization effect through the first air equalization channel 22 and the second air equalization channel 31 respectively.
  • the second gas C2 when the second gas C2 is introduced, it flows into each third gas uniformity channel 33 through the second air inlet hole 211 , and then flows out through each second air outlet hole 34 .
  • the second gas C2 achieves a primary gas equalization effect through the third air equalization channel 33.
  • the air leveling device provided by the embodiment of the present invention adopts a split design, that is, it includes a first air leveling disk 1, a second air leveling disk 2, and a third air leveling disk 3 that are sequentially arranged along the air inlet direction.
  • the channels, holes, etc. of the operator are processed separately, which can reduce the difficulty of processing and assembly, improve the repeatability of processing and installation, and reduce processing costs; at the same time, the particles generated during the processing are not easily left in the air equalization device, thus improving the Cleanliness.
  • first air inlet hole 12 and the second air inlet hole 211 of the air equalization device provided by the embodiment of the present invention are respectively located at the center of the first air equalization disk 1 and the second air equalization disk 2, and a plurality of first air equalization devices
  • the air passage 22, the plurality of second air equalization passages 31 and the plurality of third air equalization passages 33 are all symmetrically distributed relative to the center of the first air equalization disk 1, which is different from the two-layer air inlet structure in the prior art relative to the air equalization plate.
  • a gas path composed of the first air inlet 12, a plurality of first air equalization channels 22, a plurality of connecting channels 23, and a plurality of second air equalization channels 31 can be realized.
  • Another gas path composed of the second air inlet hole 211 and a plurality of third gas equalization channels 33 can be symmetrically distributed with respect to the center of the first gas uniformity disk 1, so that the gas flow path in the gas path and the gas outlet are The speed is consistent, which can improve the gas distribution uniformity of the two gases C1 and C2 entering the reaction chamber through these two gas paths respectively, thereby improving the process uniformity.
  • the embodiment of the present invention has no special restrictions on the symmetrical structures adopted by the plurality of first air equalization channels 22 , the plurality of second air equalization channels 31 and the plurality of third air equalization channels 33 , as long as they can achieve The air evening effect is enough.
  • each main path and each branch path of the two-layer air inlet structure are penetrated to the outer peripheral surface of the gas equalization device, and the ends are blocked by blind plugging, and the air path is sealed by electron beam welding. . Because there are many welding positions and difficulty in welding, welding quality problems are prone to occur. In addition, particles generated during the welding process may be left inside the channel, and the particles left inside the channel are difficult to clean through cleaning and air intake, resulting in The cleanliness inside the air equalization device is poor.
  • a first sealing structure 13 and a second sealing structure 14 are provided between the first air distribution disc 1 and the second air distribution disc 2, wherein the first sealing structure 13 surrounds the plurality of first gas equalization channels 22 and is used to seal the plurality of first gas uniformity channels 22, that is, to ensure that the gas in the first gas uniformity channels 22 will not flow from the first gas uniformity disk 1 and the second gas distribution channel 22.
  • the first air distribution disk 1 and the second air distribution disk 2 are fixedly connected through a plurality of first fasteners 4.
  • the first air distribution disk 1 is provided with a plurality of through holes 11, and correspondingly in the second air distribution disk 1
  • the gas plate 2 is provided with a plurality of threaded holes 24, and each first fastener 4 passes through each through hole 11 in one-to-one correspondence and is threadedly connected to the corresponding threaded hole 24, thereby realizing the connection between the first air distribution plate 1 and the third The fixed connection of the second air equalizer plate 2.
  • the first air distribution disk 1 and the second air distribution disk 2 can be installed and positioned through a plurality of positioning pins 5 .
  • first fasteners 4 are arranged outside the first sealing structure 13; the second sealing structure 14 is used to penetrate the first fasteners 4 through the through hole 11 in the first air distribution plate 1 and the second sealing structure 13.
  • the space between the first equalizing disk 1 and the second equalizing disk 2 is isolated.
  • the first fastener 4 may be a fastening screw.
  • the embodiment of the present invention realizes the sealing and fixing of the first air distribution disc 1 and the second air distribution disc 2 by combining the sealing structure and screw fixation, which is different from the prior art.
  • the sealing and fixing methods used in the embodiments of the present invention are detachable and convenient. disassembly and maintenance, and uses fewer sealing surfaces and seals, reducing maintenance and equipment costs.
  • the first air distribution disc 1 is divided into multiple installation areas E outside the first sealing structure 13 .
  • the multiple installation areas E are relative to the first air distribution disc 1 .
  • the center is symmetrically distributed; at least one first fastener 4 is provided in each installation area E; the second sealing structure 14 includes a plurality of seals, and each seal surrounds the first fastener 4 provided in each installation area E in one-to-one correspondence. Fastener 4 around.
  • Such an arrangement can ensure that the first air distribution plate 1 and the second air distribution plate 2 The two are evenly fixed in the circumferential direction, and can ensure that the external atmospheric environment is isolated from the space between the first air distribution disk 1 and the second air distribution disk 2, thereby ensuring the sealing of the space.
  • first sealing structure 13 and the second sealing structure 14 can be arbitrary as long as the sealing effect can be achieved.
  • a mounting groove may be formed on the back surface of the first gas distribution disk 1 (ie, the surface opposite to the second gas distribution disk 2 ) for fixing the first sealing structure 13 and the second sealing structure 14 .
  • a mounting groove may also be formed on the front surface of the second air distribution disk 2 (that is, the surface relative to the first air distribution disk 1).
  • a third sealing structure 28 and a fourth sealing structure 27 are provided between the second gas distribution disk 2 and the third gas distribution disk 3 , wherein the third sealing structure 28 is used to isolate each second gas leveling channel 31 from each third gas leveling channel 33, so that the first gas C1 and the second gas C2 can pass through the second gas leveling channel 31 and the third gas leveling channel 31 respectively in isolation from each other.
  • the fourth sealing structure 27 is arranged around the plurality of second air equalization channels 31 , the plurality of third air equalization channels 33 and the third sealing structure 28 , and is used to seal the plurality of second air equalization channels 31 , the plurality of third equalization channels 33 and the third sealing structure 28 .
  • the gas channel 33 ensures that the gas in the second gas distribution channel 31 will not leak out from between the second gas distribution disk 2 and the third gas distribution disk 3 .
  • the second air distribution plate 2 and the third air distribution plate 3 are fixedly connected through a plurality of second fasteners 8.
  • the second air distribution plate 2 is provided with a plurality of through holes 25, and correspondingly, the third air distribution plate 2 is provided with a plurality of through holes 25.
  • the gas plate 3 is provided with a plurality of threaded holes 36, and each second fastener 8 passes through each through hole 25 in one-to-one correspondence and is threadedly connected to the corresponding threaded hole 36, thereby realizing the connection between the second air distribution plate 2 and the third Fixed connection of Sanyun gas plate 3.
  • a plurality of second fasteners 8 are located outside the fourth sealing structure 27 and are spaced apart along the circumferential direction of the second air distribution disk 2 to ensure that the second fasteners 8 are positioned in the circumferential direction of the second air distribution disk 2 and the third air distribution disk 3 Fix both evenly.
  • the second fastener 8 may be a fastening screw.
  • the embodiment of the present invention realizes the sealing and fixing of the second air distribution disk 2 and the third gas distribution disk 3 by combining the sealing structure and screw fixation, which is different from the prior art method.
  • the fixed method is detachable, which facilitates disassembly and maintenance and reduces maintenance costs.
  • the third sealing structure 28 is formed by a sealing line extending along the extension direction of the interval between each second air distribution channel 31 and each third air distribution channel 33 .
  • the extension manner of the third sealing structure 28 can be adaptively designed according to the extension direction of the interval between the second air distribution channel 31 and the third air distribution channel 33 .
  • first air equalization channels 22 There are many symmetrical structures adopted by the plurality of first air equalization channels 22 . In some optional embodiments, as shown in FIG. 7A , there are four first air equalization channels 22 , and the first air equalization channels 22 are arranged relative to the second air equalization disk.
  • first branch channels 222 are distributed on both sides of the first main channel 221 , optionally, the first branch channel 222 on one side and the first branch channel 222 on the other side are staggered from each other along the extension direction of the first main channel 221 to be able to correspond to the position of the second air distribution channel 31.
  • the distribution mode of the plurality of first branch channels 222 can be set correspondingly according to the distribution mode of the plurality of second air equalizing channels 31 , for example, the first branch channel 222 on one side and the first branch channel 222 on the other side
  • the branch channels 222 may also be symmetrical to each other along the extension direction of the first main channel 221, and there is no particular limitation on this in the embodiment of the present invention.
  • Each first branch channel 222 forms a first included angle with the first main channel 221, and all first branch channels 222 between the first main channels 221 of two adjacent first air equalizing channels 22 are parallel to each other.
  • the air outlet end (air flow end) of the first branch channel 222 is the air outlet end of the first air equalizing channel 22 and is connected with the connecting channel 23.
  • the connecting channel 23 corresponds to the center position of the corresponding second air equalizing channel 31, that is, , the air inlet end 23a of the connecting channel 23 is located at the air outlet end (air flow end) of the first branch channel 222.
  • each connecting channel 23 by arranging the gas outlet end of each connecting channel 23 to correspond to the center position of each second gas equalizing channel 31 one by one, the reaction gas can enter each second gas equalizing channel 31 from the center position, so that The gas can diffuse from the central position to each outlet simultaneously, which is different from the existing technology.
  • the longest distance for the gas from the center to the gas outlet can be shortened and the speed of reaching the gas outlet can be increased, thereby improving the gas uniformity effect and air intake efficiency.
  • the respective widths and depths of the first main channel 221 and the first branch channel 222 can be adjusted according to specific needs, as long as the requirements for process uniformity are met.
  • the cross-sectional area of the first main channel 221 is larger than the cross-sectional area of the first branch channel 222 to ensure that the gas flow rate meets the requirements.
  • the first included angle may be, for example, 45°, so that each first main channel 221
  • the first branch channels 222 on both sides extend along two mutually perpendicular directions respectively, thereby forming a symmetrical structure with respect to the center of the second equalization disk 2 .
  • each connection channel 23 penetrates the second air distribution disc 2 along the axial direction of the second air distribution disc 2 , and the connection channel 23 extends from the first branch channel 222
  • the size in the direction (for example, the radial direction of the second gas distribution disk 2) is larger than the size perpendicular to the extension direction.
  • the orthogonal projection shape of the gas outlet end 23b of the connecting channel 23 on the second air equalization disk 2 is an oblong or elliptical shape, which can further increase the gas flow rate and thereby improve the air intake efficiency.
  • each third air equalization channel 33 may adopt a variety of symmetrical structures.
  • each third air equalization channel 33 includes a second main channel 331 and a plurality of second main channels 331 .
  • the number of the second main channels 331 is the same as the number of the first main channels 221, and they are arranged in a one-to-one correspondence.
  • the number of the first main channels 221 and the second main channels 331 is four, and the number of the second main channels 331 is four.
  • the first main channels 221 are perpendicular to each other, the four second main channels 331 are perpendicular to each other, and the four first main channels 221 and the four second main channels 331 are arranged in one-to-one correspondence in the axial direction.
  • a plurality of second branch channels 332 are distributed on both sides of the second main channel 331.
  • one of the The second branch channel 332 and the second branch channel 332 on the other side are staggered from each other along the extension direction of the second main channel 331.
  • This arrangement is to enable a second air distribution channel between the two adjacent second branch channels 332. 31 setting reserved space.
  • the first branch channel 222 on one side and the first branch channel 222 on the other side are arranged along the first main channel.
  • the extending directions of 221 may also be symmetrical to each other, and there is no particular limitation on this in the embodiment of the present invention.
  • Each second branch channel 332 forms a second included angle with the second main channel 331, and the second included angle is the same as the above-mentioned first included angle; all second branch channels between two adjacent second main channels 331
  • the channels 332 are all parallel to each other; a plurality of the second air outlets 34 are evenly distributed along the extending direction of each second branch channel 332 .
  • the second included angle may be, for example, 45°, so that each second main channel 331
  • the second branch channels 332 on both sides extend along two mutually perpendicular directions respectively, thereby forming a symmetrical structure relative to the center of the third air distribution disk 3 .
  • the respective widths and depths of the second main channel 331 and the second branch channel 332 can be adjusted according to specific needs, as long as the requirements for process uniformity are met.
  • the cross-sectional area of the second main channel 331 is larger than the cross-sectional area of the second branch channel 332 to ensure that the gas flow rate meets the requirements.
  • a plurality of second air equalization channels 31 are located between two adjacent second branch channels 332 in one-to-one correspondence, and are parallel to each other with the adjacent second branch channels 332 , and are also parallel to each other.
  • the second air distribution channel 31 and the second branch channel 332 are alternately arranged in the circumferential direction of the third air distribution disk 3; the air outlet end 23b of the connecting channel 23 corresponds to the center position of the second air distribution channel 31, so that The gas can be diffused from the center of the second gas distribution channel 31 to both ends of the second gas distribution channel 31 at the same time, and the longest distance from the center to the gas outlet is reduced to about half of the radius of the third gas distribution disk 3 One, which can effectively increase the air flow speed, thereby improving the air uniformity effect and air intake efficiency.
  • the second air equalization channel 31 is a straight channel.
  • a plurality of the above-mentioned first air outlets are evenly distributed in the extending direction of each second air equalizing channel 31 32. Therefore, the plurality of second air equalization channels 31 form a symmetrical structure relative to the center of the third air equalization disk 3 .
  • the first air outlet holes 32 and the second air outlet holes 34 can be arranged alternately. cloth, that is, each of the plurality of first air outlets 32 and the plurality of second air outlets 34 can be evenly distributed on the third air distribution plate 3 .
  • the first air outlet hole 32 and the second air outlet hole 34 can be circular holes with a diameter range of, for example, 0.8mm-1.5mm. This diameter range is not only suitable for the requirements of rapid air uniformity and rapid air intake in the ALD process, but also It will not affect process uniformity and save gas consumption.
  • the diameter of the air holes can also be designed adaptively according to different processes. For example, for a CVD process, the diameters of the first air outlet hole 32 and the second air outlet hole 34 can be less than 0.8 mm.
  • the two first air outlets 32a at the outermost edge of each second air distribution channel 31 are respectively adjacent to both ends of the second air distribution channel 31 (ie, The two air flow ends of the second air equalization channel 31), optionally, the distance between the first air outlet hole 32a and the end boundary of the second air equalization channel 31 is less than or equal to 2 mm; as shown in Figure 4B, each The edge-most second air outlet hole 34a corresponding to the two branch channels 332 is adjacent to one end of the second branch channel 332 (that is, the air flow end of the second branch channel 332).
  • the second air outlet hole 34a and the second branch channel 332 The distance between the end boundaries is less than or equal to 2mm.
  • the airflow can be diffused to the boundaries of both ends of the second air equalization channel 31 and the boundary of one end of the second branch channel 332, and flow out from the first air outlet hole 32a and the second air outlet hole 34a at the edge, thereby avoiding the possibility of Because the distance between the outermost air outlet hole and the channel boundary is too large, the air flow will generate vortices near the boundary, forming a dead zone. Gas is easy to remain in the dead zone and is difficult to be taken in and out.
  • each first air outlet hole 32 near its air outlet end is a gradually expanding hole 321 ; as shown in FIG. 4B , a portion of each second air outlet hole 34 near its air outlet end is a gradually expanding hole 321 .
  • One part is a gradually expanding hole 341.
  • the air flow can be diffused, so that the reaction gas entering the reaction chamber can evenly diffuse to the wafer surface and avoid areas on the wafer surface corresponding to the air outlets. Differences in film thickness from those deposited in other areas, This can improve process uniformity.
  • a first groove is provided on at least one of the two surfaces of the first gas distribution disk 1 and the second gas distribution disk 2 facing each other to form a first gas distribution channel 22, for example As shown in FIG. 7A , the first groove may be disposed on the front surface of the second air distribution disc 2 (that is, relative to the surface of the first air distribution disc 1 ).
  • a second groove is provided on at least one of the two opposite surfaces of the second air distribution disk 2 and the third air distribution disk 3 to form a second air distribution channel 31; in the second air distribution disk 2 At least one of the two surfaces opposite to the third air distribution disk 3 is provided with a third groove, forming a third air distribution channel 33 .
  • FIG. 7A the first groove may be disposed on the front surface of the second air distribution disc 2 (that is, relative to the surface of the first air distribution disc 1 ).
  • a second groove is provided on at least one of the two opposite surfaces of the second air distribution disk 2 and the third air distribution disk 3 to form a second air distribution channel 31; in the second air
  • the second concave channel and the third concave channel are both disposed on the front surface of the third gas distribution disc 3 (that is, relative to the surface of the second gas distribution disc 2 ).
  • the first sealing structure 13 and the second sealing structure 14 may be disposed on the back side of the first gas distribution disk 1 (that is, relative to the surface of the second gas distribution disk 2);
  • the three sealing structures 28 and the fourth sealing structure 27 may be disposed on the back side of the second air distribution disk 2 (ie, relative to the surface of the third air distribution disk 3).
  • a flow guide convex portion 35 is formed on the surface of the third air distribution plate 3 opposite to the air outlet end of the second air inlet hole 211 .
  • the surface of the convex portion 35 is an arc-shaped convex surface. With the help of the guide convex portion 35, the flow can be divided evenly to prevent the airflow from forming a vortex near the center of the third air equalizing disk 3 when entering the second main channel 331 from the second air inlet hole 211, affecting the air equalizing effect. .
  • the air inlet end of the second branch channel 332 is directly opposite to the air outlet end of the second air inlet hole 211 among the plurality of second branch channels 332 , for example, as shown in FIG. 8A
  • the width of the channel section of the second branch channel 332a close to its air inlet end can be It is reduced relative to other parts to avoid excessive gas flow entering the second branch channel 332a and affecting the entire gas uniformity effect.
  • FIG. 9A is a simulation analysis diagram of the flow rate uniformity of part of the second air equalization channel used in the embodiment of the present invention.
  • Figure 9B is a simulation analysis of the flow rate uniformity of part of the third air equalization channel used in the embodiment of the present invention. picture.
  • A1 to A7 and B1 to B6 correspond to 7 branches in the vertical direction and 6 branches in the horizontal direction respectively.
  • the Simulation analysis obtained six flow rate uniformity coefficients K1 to K6.
  • the surfaces of the channels and holes in the gas leveling device can be processed by mechanical polishing or electrochemical polishing to effectively control and improve the surface quality of the channels and holes. , reduce surface roughness and gas flow resistance, thereby effectively reducing the number of particles inside the channel and reducing the particle size of the film formed on the wafer surface.
  • the air equalization device provided by the embodiment of the present invention adopts a split design, that is, it includes a first air equalization disk, a second air equalization disk, and a third air equalization disk that are sequentially arranged along the air inlet direction.
  • the channels, holes, etc. of the three are processed separately, which can reduce the difficulty of processing and assembly, improve the repeatability of processing and installation, and reduce the processing cost; at the same time, the particles generated during the processing are not easily left in the air equalization device, thus Can improve cleanliness.
  • the invention provides an air equalization device in which the first air inlet hole and the second air inlet hole are respectively located at the centers of the first air equalization disk and the second air equalization disk, and a plurality of first air equalization channels, a plurality of third air inlet holes, The two air equalization channels and the plurality of third air equalization channels are all symmetrically distributed relative to the center of the first air equalization disk, which can realize the first air inlet, the plurality of first air equalization channels, and the plurality of connecting passages.
  • a gas path composed of a plurality of second air equalization channels, and another type of air path composed of a second air inlet and a plurality of third air equalization channels can both be symmetrical with respect to the center of the first air equalization disk Distribution, thereby improving the uniformity of gas distribution of the two gases entering the reaction chamber through these two gas paths, thereby improving process uniformity.
  • an embodiment of the present invention also provides a semiconductor process equipment, including a reaction chamber and an air equalizing device disposed on the top of the reaction chamber.
  • the air equalizing device adopts the above-mentioned air equalizing device provided by the embodiment of the present invention.
  • the semiconductor process equipment is ALD process equipment.
  • the gas leveling device is arranged on the top of the reaction chamber of the ALD process equipment, and is used to introduce two kinds of gases into the reaction chamber independently, even if the two gases are isolated from each other in the gas leveling device.
  • the semiconductor process equipment provided by the embodiments of the present invention can not only reduce the processing difficulty and improve the cleanliness, but also improve the air uniformity effect and air intake efficiency by using the above-mentioned air equalization device provided by the embodiments of the present invention.

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Abstract

本发明提供一种匀气装置及半导体工艺设备，包括沿进气方向依次设置的第一匀气盘、第二匀气盘和第三匀气盘，其中，第一匀气盘的中心设置有第一进气孔，第二匀气盘的中心设置有第二进气孔；第一匀气盘和第二匀气盘之间形成有相对于第一匀气盘的中心对称分布的多个第一匀气通道；第二匀气盘与第三匀气盘之间设置有多个第二匀气通道和多个第三匀气通道，且多个第二匀气通道与多个第三匀气通道均相对于第一匀气盘的中心对称分布，且相互隔离；各个连接通道的出气端一一对应地与各个第二匀气通道连通。本发明提供的匀气装置及半导体工艺设备，不仅可以降低加工难度，提高洁净度，而且还可以提高匀气效果和进气效率。

Description

匀气装置及半导体工艺设备 技术领域
本发明涉及半导体制造领域，具体地，涉及一种匀气装置及半导体工艺设备。
背景技术
原子层沉积(Atomic Layer Deposition，ALD)工艺作为一种先进的薄膜沉积工艺，具有自限制周期性生长、薄膜质量优、台阶覆盖率优等的优势，可以应用于沉积Al2O3、HfO、HfZrO、TaN、TiN、TaO、W等的薄膜，且适用于大多数IC领域，如逻辑器件、DRAM、3D nand等。
典型的ALD工艺设备在工艺过程中，要求进气均匀且进气迅速，同时需要两种不同的反应气体先经进气通道再经匀气装置交替进入反应腔室，进而到达晶圆表面进行ALD反应制备薄膜。对于部分ALD工艺，由于两种反应气体反应剧烈，且工艺过程中吹扫不彻底等因素，容易在匀气装置的气路中生成颗粒，这些颗粒如果被气体携带至晶圆表面，会造成晶圆表面薄膜颗粒超标，为此，要求两种反应气体必须沿匀气装置中不同气路进入反应腔室，以尽可能减少两种反应气体的汇合几率，即，要求匀气装置既可以使输送两种不同工艺气体的气路相互隔离，又具有匀气和快速进气等功能。
但是，现有的匀气装置在实际应用中不可避免地存在以下问题，即：
其一，匀气装置为整体加工零件，即，在整体式结构上加工构成气路的长深孔、密集孔道等，加工难度较大，在加工过程中容易产生颗粒物遗留在匀气装置内，导致匀气装置的洁净度较差，而且由于各气路间隙较小，容易出现加工失误和加工偏差，从而导致不同工艺设备的工艺重复性较差。
其二，由于需要两种反应气体沿匀气装置中不同气路进入反应腔室，现 有的匀气装置无法实现两种反应气体对应的气路均相对于匀气装置的中心对称，从而影响进入反应腔室的气体分布均匀性。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种匀气装置及半导体工艺设备，不仅可以降低加工难度，提高洁净度，而且还可以提高匀气效果和进气效率。
为实现本发明的目的而提供一种匀气装置，应用于半导体工艺设备，包括沿进气方向依次设置的第一匀气盘、第二匀气盘和第三匀气盘，其中，所述第一匀气盘的中心设置有第一进气孔，所述第二匀气盘的中心设置有第二进气孔，所述第一进气孔与所述第二进气孔之间通过隔离件相互隔离；
所述第一匀气盘和所述第二匀气盘之间形成有相对于所述第一匀气盘的中心对称分布的多个第一匀气通道，每个所述第一匀气通道的进气端均与所述第一进气孔连通；
所述第二匀气盘上设置有多个连接通道，各个所述连接通道的进气端一一对应地与各个所述第一匀气通道的出气端连通；
所述第二匀气盘与所述第三匀气盘之间设置有多个第二匀气通道和多个第三匀气通道，且多个所述第二匀气通道与多个所述第三匀气通道均相对于所述第一匀气盘的中心对称分布，且相互隔离；
各个所述连接通道的出气端一一对应地与各个所述第二匀气通道连通；所述第三匀气盘上，且对应于每个所述第二匀气通道设置有多个第一出气孔，每个所述第一出气孔的进气端与对应的所述第二匀气通道连通，每个所述第一出气孔的出气端位于所述第三匀气盘背离所述第二匀气盘的表面；
多个所述第三匀气通道的进气端均与所述第二进气孔连通，所述第三匀气盘上，且对应于每个所述第三匀气通道设置有多个第二出气孔，每个所述第二出气孔的进气端与对应的所述第三匀气通道连通，每个所述第二出气孔 的出气端位于所述第三匀气盘背离所述第二匀气盘的表面。
可选的，所述第一匀气盘与所述第二匀气盘之间设置有第一密封结构和第二密封结构，其中，所述第一密封结构环绕于多个所述第一匀气通道的周围，用于密封多个所述第一匀气通道；
所述第一匀气盘与所述第二匀气盘通过多个第一紧固件固定连接，且多个所述第一紧固件设置于所述第一密封结构的外侧；所述第二密封结构用于将所述第一紧固件穿设于所述第一匀气盘中的通孔与所述第一匀气盘和所述第二匀气盘之间的空间相隔离。
可选的，所述第一匀气盘在所述第一密封结构外侧划分有多个安装区域，多个所述安装区域相对于所述第一匀气盘的中心对称分布；每个所述安装区域中设置有至少一个所述第一紧固件；
所述第二密封结构包括多个密封件，各个所述密封件一一对应地环绕设置于各个所述安装区域中的所述第一紧固件周围。
可选的，所述第二匀气盘与所述第三匀气盘之间设置有第三密封结构和第四密封结构，其中，所述第三密封结构用于将各个所述第二匀气通道与各个所述第三匀气通道相隔离；所述第四密封结构环绕设置于多个所述第二匀气通道、多个所述第三匀气通道和所述第三密封结构周围，用于密封多个所述第二匀气通道和多个所述第三匀气通道；
所述第二匀气盘与所述第三匀气盘通过多个第二紧固件固定连接，多个所述第二紧固件位于所述第四密封结构的外侧，且沿所述第二匀气盘的周向间隔设置。
可选的，所述第三密封结构为由一条密封线沿各个所述第二匀气通道与各个所述第三匀气通道之间的间隔的延伸方向延伸形成的闭合结构。
可选的，所述隔离件为在所述第二匀气盘的相对于所述第一匀气盘的表面上形成的凸台，所述凸台朝向所述第一匀气盘延伸至所述第一进气孔中， 且与所述第一进气孔同轴，且间隔设置；
所述凸台中形成有沿其轴向贯穿所述凸台和所述第二匀气盘的所述第二进气孔。
可选的，每个所述第一匀气通道均包括一个第一主通道和多个第一支通道，其中，
所述第一主通道的一端汇聚于与所述第一进气孔相对的位置，所述第一主通道的另一端沿所述第二匀气盘的径向延伸至靠近所述第二匀气盘的边缘处；
多个所述第一支通道分布于所述第一主通道两侧，每个所述第一支通道均与所述第一主通道呈第一夹角；相邻的两个所述第一主通道之间的所有所述第一支通道均相互平行；
所述第一支通道的出气端与所述连接通道连通，所述连接通道与对应的所述第二匀气通道的中心位置相对应。
可选的，每个所述连接通道沿所述第二匀气盘的轴向贯通所述第二匀气盘，所述连接通道在所述第一支通道的延伸方向上的尺寸大于垂直于该延伸方向上的尺寸。
可选的，每个所述第三匀气通道均包括一个第二主通道和多个第二支通道，其中，
所述第二主通道的一端汇聚于与所述第二进气孔相对的位置，所述第二主通道的另一端沿所述第三匀气盘的径向延伸至靠近所述第三匀气盘的边缘处；
多个所述第二支通道分布于所述第二主通道两侧，每个所述第二支通道均与所述第二主通道呈第二夹角，所述第二夹角与所述第一夹角相同；相邻的两个所述第二主通道之间的所有所述第二支通道均相互平行；
每个所述第二支通道的延伸方向上均匀分布有多个所述第二出气孔。
可选的，各个所述第二匀气通道一一对应地位于各个相邻的两个所述第二支通道之间，且与相邻的所述第二支通道相互平行；
每个所述第二匀气通道的延伸方向上均匀分布有多个所述第一出气孔。
可选的，每个所述第二匀气通道对应的最边缘的两个所述第一出气孔分别紧邻所述第二匀气通道的两端；每个所述第二支通道对应的最边缘的所述第二出气孔紧邻所述第二支通道的一端。
可选的，每个所述第一出气孔靠近其出气端的一部分为渐扩孔；每个所述第二出气孔靠近其出气端的一部分为渐扩孔。
可选的，在所述第一匀气盘和所述第二匀气盘彼此相对的两个表面中的至少一者设置有第一凹道，构成所述第一匀气通道；
在所述第二匀气盘和所述第三匀气盘彼此相对的两个表面中的至少一者设置有第二凹道，构成所述第二匀气通道；在所述第二匀气盘和所述第三匀气盘彼此相对的两个表面中的至少一者设置有第三凹道，构成所述第三匀气通道。
可选的，所述第三匀气盘的与所述第二进气孔的出气端相对的表面上形成有导流凸部，所述导流凸部的表面为弧形凸面。
作为另一个技术方案，本发明还提供一种半导体工艺设备，包括反应腔室和设置在所述反应腔室顶部的匀气装置，所述匀气装置采用本发明提供的上述匀气装置，用于分别独立地向所述反应腔室内通入两种气体。
本发明具有以下有益效果：
本发明提供的匀气装置，通过采用分体式设计，即，包括沿进气方向依次设置的第一匀气盘、第二匀气盘和第三匀气盘，可以对三者的通道、孔等进行分体式加工，从而可以降低加工和组装难度，提高加工和安装重复性，降低加工成本；同时，加工过程中产生的颗粒物不容易遗留在匀气装置内，从而可以提高洁净度。此外，本发明提供的匀气装置，其第一进气孔和第二 进气孔分别位于第一匀气盘和第二匀气盘的中心，且多个第一匀气通道、多个第二匀气通道和多个第三匀气通道均相对于第一匀气盘的中心对称分布，可以实现由第一进气孔、多个第一匀气通道、多个连接通道、多个第二匀气通道构成的一种气路，与由第二进气孔、多个第三匀气通道构成的另一种气路均能够相对于第一匀气盘的中心对称分布，从而可以提高两种气体分别经由这两种气路进入反应腔室的气体分布均匀性，进而提高工艺均匀性。
本发明提供的半导体工艺设备，其通过采用本发明提供的上述匀气装置，不仅可以降低加工难度，提高洁净度，而且还可以提高匀气效果和进气效率。
附图说明
图1为本发明实施例提供的匀气装置的侧视图；
图2为本发明实施例提供的匀气装置的俯视图；
图3A为沿图2中A-A线的剖视图；
图3B为图3A的局部放大图；
图4A为沿图2中B-B线的剖视图；
图4B为图4A的局部放大图；
图5A为本发明实施例提供的匀气装置的一种分解图；
图5B为本发明实施例提供的匀气装置的另一种分解图；
图6A为本发明实施例采用的第一匀气盘的正面视图；
图6B为本发明实施例采用的第一匀气盘的背面视图；
图7A为本发明实施例采用的第二匀气盘的正面视图；
图7B为本发明实施例采用的第二匀气盘的背面视图；
图8A为本发明实施例采用的第三匀气盘的正面视图；
图8B为本发明实施例采用的第三匀气盘的背面视图；
图9A为本发明实施例采用的部分第二匀气通道的流速均匀性仿真分析 图；
图9B为本发明实施例采用的部分第三匀气通道的流速均匀性仿真分析图；
图10A为现有的匀气装置的俯视图和侧视图；
图10B为沿图10A中G-G线的剖视图；
图10C为现有的匀气装置采用的其中一层进气结构的流速均匀性仿真分析图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的匀气装置及半导体工艺设备进行详细描述。
请一并参阅图10A和图10B，现有的一种匀气装置为一整体加工零件，其内部形成有两种相互隔离的气路，用于相互隔离地分别输送两种反应气体，该匀气装置的顶部设置有第一进气孔41和第二进气孔42，二者均相对于匀气装置的中心偏心设置，且在匀气装置内部设置有两层进气结构，第二层进气结构如图10B所示，第一层进气结构与第二层进气结构相类似。以第二层进气结构为例，第二进气孔42的出气端与第二层进气结构的多条主路43的交汇处连通，以使其中一种反应气体能够依次经由第二进气孔42、各主路43、各支路44和第二出气孔45流入反应腔室；类似的，第一进气孔41的出气端与第一层进气结构的主路中心连通，以使另一种反应气体能够依次经由第一进气孔41、第一层进气结构的各主路、各支路和第一出气孔47流入反应腔室。此外，两层进气结构的各主路、各支路的末端均贯通至匀气装置的外周面，且通过盲堵46封堵该末端，并通过电子束焊实现气路的密封。
上述匀气装置在实际应用中不可避免地存在以下问题，即：
其一，匀气装置为整体加工零件，即，在整体式结构上加工构成气路的长深孔、密集孔道等，加工难度较大，在加工过程中容易产生颗粒物遗留在 匀气装置内，导致匀气装置的洁净度较差，而且由于各气路间隙较小，容易出现加工失误和加工偏差，从而导致不同工艺设备的工艺重复性较差。
其二，由于第一进气孔41和第二进气孔42均相对于匀气装置的中心偏心设置，导致两层进气结构相对于匀气装置的中心是非对称的，如图10B所示，位于主路交汇处左右两侧的支路长度不同，从而导致不同支路的流动路径、出气速度不一致，从而影响进入反应腔室的气体分布均匀性。
其三，由于气体需要从主路交汇处向各支路的末端扩散，导致反应气体在匀气装置中的流动路径较长，从而导致到达出气口的速度较慢，影响匀气效果和进气效率。如图10C所示，为上述匀气装置的流速均匀性仿真分析图。以出气孔的出气流速为考量，图10C中的A1至A7，B1至B7分别对应竖直方向和水平方向上的7条支路，通过对气体从这些支路流动至出气孔的流速均匀性进行仿真分析获得六个流速均匀性系数K1至K6，不同的K分别表示不同支路中出气孔的流量或压力的比值，该比值越小，流速均匀性越好。现有技术中的六个流速均匀性系数具体为：K1＝7.86，K2＝6.85，K3＝4.23，K4＝5.11，K5＝5.51，K6＝5.94，均匀性系数相对较大，因此，上述匀气装置从这些支路流动至出气孔的流速均匀性较差。
为了至少解决上述技术问题之一，本发明实施例提供一种匀气装置，应用于半导体工艺设备，例如ALD工艺设备，该匀气装置设置于ALD工艺设备的反应腔室的顶部，用于分别独立地向反应腔室内部通入两种气体，即，使这两种气体在匀气装置中是相互隔离的。
具体地，请一并参阅图1至图8B，本发明实施例提供的匀气装置，包括沿进气方向(例如图1中的竖直方向)依次设置的第一匀气盘1、第二匀气盘2和第三匀气盘3，其中，如图2和图3A所示，第一匀气盘1的中心设置有第一进气孔12，第二匀气盘2的中心设置有第二进气孔211，第一进气孔12与第二进气孔211之间通过隔离件21相互隔离，以保证两种反应气体 能够相互隔离地通过第一进气孔12与第二进气孔211。
在一些可选的实施例中，如图3A所示，隔离件21为在第二匀气盘2的相对于第一匀气盘1的表面上形成的凸台，该凸台中设置有沿其轴向贯穿该凸台和第二匀气盘2的第二进气孔211。这样设置，可以使第一进气孔12与第二进气孔211均位于第一匀气盘1的中心，即，与第一匀气盘1同轴。可选的，上述凸台朝向第一匀气盘1延伸至第一进气孔12中，且与第一进气孔12同轴，并间隔设置。
第一匀气盘1和第二匀气盘2之间形成有相对于第一匀气盘1的中心对称分布的多个第一匀气通道22，每个第一匀气通道22的进气端均与第一进气孔12连通；第二匀气盘2上设置有多个连接通道23，各个连接通道23的进气端一一对应地与各个第一匀气通道22的出气端连通；第二匀气盘2与第三匀气盘3之间设置有多个第二匀气通道31和多个第三匀气通道33，且多个第二匀气通道31与多个第三匀气通道33均相对于第一匀气盘1的中心对称分布，且相互隔离。各个连接通道23的出气端一一对应地与各个第二匀气通道31连通；第三匀气盘3上，且对应于每个第二匀气通道31设置有多个第一出气孔32，每个第一出气孔32的进气端与对应的第二匀气通道31连通，每个第一出气孔32的出气端位于第三匀气盘3背离第二匀气盘2的表面。多个第三匀气通道33的进气端均与第二进气孔211连通，第三匀气盘3上，且对应于每个第三匀气通道33设置有多个第二出气孔34，每个第二出气孔34的进气端与对应的第三匀气通道33连通，每个第二出气孔34的出气端位于第三匀气通道33背离第二匀气盘2的表面。
如图3B中的箭头所示，在通入第一种气体C1时，其经由第一进气孔12流入各个第一匀气通道22，然后通过对应的连接通道23流入各个第二匀气通道31，最后通过各个第一出气孔32流出。第一种气体C1分别经由第一匀气通道22、第二匀气通道31实现二次匀气效果。
如图4B中的箭头所示，在通入第二种气体C2时，其经由第二进气孔211流入各个第三匀气通道33，然后通过各个第二出气孔34流出。第二种气体C2经由第三匀气通道33实现一次匀气效果。
本发明实施例提供的匀气装置，通过采用分体式设计，即，包括沿进气方向依次设置的第一匀气盘1、第二匀气盘2和第三匀气盘3，可以对三者的通道、孔等进行分体式加工，从而可以降低加工和组装难度，提高加工和安装重复性，降低加工成本；同时，加工过程中产生的颗粒物不容易遗留在匀气装置内，从而可以提高洁净度。
此外，本发明实施例提供的匀气装置，其第一进气孔12和第二进气孔211分别位于第一匀气盘1和第二匀气盘2的中心，且多个第一匀气通道22、多个第二匀气通道31和多个第三匀气通道33均相对于第一匀气盘1的中心对称分布，这与现有技术中两层进气结构相对于匀气装置的中心是非对称的相比，可以实现由第一进气孔12、多个第一匀气通道22、多个连接通道23、多个第二匀气通道31构成的一种气路，与由第二进气孔211、多个第三匀气通道33构成的另一种气路均能够相对于第一匀气盘1的中心对称分布，使气体在该气路中的流动路径、出气速度一致，从而可以提高两种气体C1、C2分别经由这两种气路进入反应腔室的气体分布均匀性，进而提高工艺均匀性。
需要说明的是，本发明实施例对多个第一匀气通道22、多个第二匀气通道31和多个第三匀气通道33各自采用的对称结构没有特别的限制，只要能够起到匀气效果即可。
在现有技术中，两层进气结构的各主路、各支路的末端均贯通至匀气装置的外周面，且通过盲堵封堵该末端，并通过电子束焊实现气路的密封。由于焊接位置多，焊接难度大，很容易出现焊接质量问题，并且，焊接过程中产生的颗粒可能会遗留在通道内部，且遗留在通道内部的颗粒难以通过清洗和进气等方式处理干净，导致匀气装置内部的洁净度较差。
为了解决上述问题，可选的，如图6B所示，第一匀气盘1与第二匀气盘2之间设置有第一密封结构13和第二密封结构14，其中，第一密封结构13环绕于多个上述第一匀气通道22的周围，用于密封多个第一匀气通道22，即保证第一匀气通道22内的气体不会从第一匀气盘1与第二匀气盘2之间泄漏出去。第一匀气盘1与第二匀气盘2通过多个第一紧固件4固定连接，具体地，第一匀气盘1上设置有多个通孔11，且对应地在第二匀气盘2上设置有多个螺纹孔24，各个第一紧固件4一一对应的穿过各个通孔11，并与对应的螺纹孔24螺纹连接，从而实现第一匀气盘1与第二匀气盘2的固定连接。可选的，第一匀气盘1与第二匀气盘2可以通过多个定位销5实现安装定位。
而且，多个第一紧固件4设置于第一密封结构13的外侧；第二密封结构14用于将第一紧固件4穿设于第一匀气盘1中的通孔11与第一匀气盘1和第二匀气盘2之间的空间相隔离。这样，外界的大气环境与第一匀气盘1和第二匀气盘2之间的空间是隔绝的，避免外界的气体经过通孔11进入该空间，从而保证该空间的密封性。第一紧固件4可以是紧固螺钉。本发明实施例在采用分体式结构的基础上，通过采用密封结构与螺钉固定结合的方式来实现第一匀气盘1与第二匀气盘2的密封和固定，这与现有技术中通过焊接密封相比，不会出现焊接质量问题，密封可靠性更高，而且不会产生的颗粒，从而可以提高洁净度；同时，本发明实施例采用的密封和固定的方式是可拆卸的，便于拆卸和维护，而且采用的密封面和密封件数量较少，从而可以降低维护和设备成本。
在一些可选的实施例中，如图6B所示，第一匀气盘1在第一密封结构13外侧划分有多个安装区域E，多个安装区域E相对于第一匀气盘1的中心对称分布；每个安装区域E中设置有至少一个第一紧固件4；第二密封结构14包括多个密封件，各个密封件一一对应地环绕设置于各个安装区域E中的第一紧固件4周围。这样设置，既可以保证在第一匀气盘1与第二匀气盘2 的周向上对二者均匀固定，又可以保证外界的大气环境与第一匀气盘1和第二匀气盘2之间的空间是隔绝的，从而可以保证该空间的密封性。在实际应用中，第一密封结构13和第二密封结构14的形状可以是任意的，只要能够实现密封效果即可。另外，可以在第一匀气盘1的背面(即，相对于第二匀气盘2的表面)上形成安装槽，用于固定第一密封结构13和第二密封结构14。当然，也可以在第二匀气盘2的正面(即，相对于第一匀气盘1的表面)上形成安装槽。
在一些可选的实施例中，如图7B所示，第二匀气盘2与第三匀气盘3之间设置有第三密封结构28和第四密封结构27，其中，第三密封结构28用于将各个第二匀气通道31与各个第三匀气通道33相隔离，以使第一种气体C1与第二种气体C2能够相互隔离地分别通过第二匀气通道31与第三匀气通道33。第四密封结构27环绕设置于多个第二匀气通道31、多个第三匀气通道33和第三密封结构28周围，用于密封多个第二匀气通道31、多个第三匀气通道33，即保证第二匀气通道31内的气体不会从第二匀气盘2与第三匀气盘3之间泄漏出去。第二匀气盘2与第三匀气盘3通过多个第二紧固件8固定连接，具体地，第二匀气盘2上设置有多个通孔25，且对应地在第三匀气盘3上设置有多个螺纹孔36，各个第二紧固件8一一对应的穿过各个通孔25，并与对应的螺纹孔36螺纹连接，从而实现第二匀气盘2与第三匀气盘3的固定连接。多个第二紧固件8位于第四密封结构27的外侧，且沿第二匀气盘2的周向间隔设置，以保证在第二匀气盘2与第三匀气盘3的周向上对二者均匀固定。第二紧固件8可以是紧固螺钉。
本发明实施例在采用分体式结构的基础上，通过采用密封结构与螺钉固定结合的方式来实现第二匀气盘2与第三匀气盘3的密封和固定，这与现有技术中通过焊接密封相比，不会出现焊接质量问题，密封可靠性更高，而且不会产生的颗粒，从而可以提高洁净度；同时，本发明实施例采用的密封和 固定的方式是可拆卸的，便于拆卸和维护，降低了维护成本。
在一些可选的实施例中，如图7B所示，第三密封结构28为由一条密封线沿各个第二匀气通道31与各个第三匀气通道33之间的间隔的延伸方向延伸形成的闭合结构，以将各个第二匀气通道31与各个第三匀气通道33相隔离。第三密封结构28的延伸方式可以根据第二匀气通道31与第三匀气通道33之间的间隔的延伸方向适应性设计。
多个第一匀气通道22采用的对称结构可以有多种，在一些可选的实施例中，如图7A所示，第一匀气通道22为四个，且相对于第二匀气盘2的中心对称分布；每个第一匀气通道22均包括一个第一主通道221和多个第一支通道222，其中，第一主通道221的一端汇聚于与第一进气孔12相对的位置，第一主通道221的另一端沿第二匀气盘2的径向延伸至靠近第二匀气盘2的边缘处；多个第一支通道222分布于第一主通道221两侧，可选的，其中一侧的第一支通道222与另一侧的第一支通道222沿第一主通道221的延伸方向相互错开，以能够与第二匀气通道31所在位置对应，当然，在实际应用中，多个第一支通道222的分布方式可以根据多个第二匀气通道31的分布方式对应设置，例如，其中一侧的第一支通道222与另一侧的第一支通道222沿第一主通道221的延伸方向也可以相互对称，本发明实施例对此没有特别的限制。每个第一支通道222均与第一主通道221呈第一夹角，相邻的两个第一匀气通道22的第一主通道221之间的所有第一支通道222均相互平行，第一支通道222的出气端(气流末端)即为第一匀气通道22的出气端，与连接通道23连通，该连接通道23与对应的第二匀气通道31的中心位置相对应，即，连接通道23的进气端23a位于第一支通道222的出气端(气流末端)。
如图3B所示，通过使各个连接通道23的出气端一一对应地与各个第二匀气通道31的中心位置相对应，可以使反应气体自中心位置进入各个第二匀气通道31，使气体能够从中心位置同时向各个出气端扩散，这与现有技术中 气体需要从主路交汇处向各支路的末端扩散相比，可以缩短气体自中心位置到达出气端的最长距离，提高到达出气端的速度，进而可以提高匀气效果和进气效率。
需要说明的是，在实际应用中，第一主通道221和第一支通道222各自的宽度和深度可以根据具体需要进行调整，只要满足工艺均匀性的要求即可。可选的，第一主通道221的横截面积大于第一支通道222的横截面积，以保证气体流速满足要求。
在一个具体的实施例中，如图7A所示，如果第一主通道221为四个，且相互垂直，则该第一夹角例如可以为45°，这样可以使每个第一主通道221两侧的第一支通道222分别沿相互垂直的两个方向延伸，从而可以形成相对于第二匀气盘2的中心的对称结构。
在一些可选的实施例中，如图7B所示，每个连接通道23沿第二匀气盘2的轴向贯通第二匀气盘2，该连接通道23在第一支通道222的延伸方向(例如第二匀气盘2的径向)上的尺寸大于垂直于该延伸方向上的尺寸。例如，连接通道23的出气端23b在第二匀气盘2上的正投影形状为长圆形或者椭圆形，这样可以进一步提高气体流速，从而可以提高进气效率。
多个第三匀气通道33采用的对称结构可以有多种，在一些可选的实施例中，如图8A所示，每个第三匀气通道33均包括一个第二主通道331和多个第二支通道332，其中，第二主通道331的一端汇聚于与第二进气孔211相对的位置，第二主通道331的另一端沿第三匀气盘3的径向延伸至靠近第三匀气盘3的边缘处。可选的，第二主通道331的数量与第一主通道221的数量相同，且一一对应地相对设置，例如，第一主通道221和第二主通道331均为四个，且四个第一主通道221相互垂直，四个第二主通道331相互垂直，并且四个第一主通道221与四个第二主通道331在轴向上一一对应地设置。
多个第二支通道332分布于第二主通道331两侧，可选的，其中一侧的 第二支通道332与另一侧的第二支通道332沿第二主通道331的延伸方向相互错开，这样设置是为了能够在相邻两个第二支通道332之间为第二匀气通道31的设置预留空间。当然，在实际应用中，在第二匀气通道31的设置有足够的预留空间的前提下，其中一侧的第一支通道222与另一侧的第一支通道222沿第一主通道221的延伸方向也可以相互对称，本发明实施例对此没有特别的限制。每个第二支通道332均与第二主通道331呈第二夹角，该第二夹角与上述第一夹角相同；相邻的两个第二主通道331之间的所有第二支通道332均相互平行；每个第二支通道332的延伸方向上均匀分布有多个上述第二出气孔34。在一个具体的实施例中，如图8A所示，如果第二主通道331为四个，且相互垂直，则该第二夹角例如可以为45°，这样可以使每个第二主通道331两侧的第二支通道332分别沿相互垂直的两个方向延伸，从而可以形成相对于第三匀气盘3的中心的对称结构。
需要说明的是，在实际应用中，第二主通道331和第二支通道332各自的宽度和深度可以根据具体需要进行调整，只要满足工艺均匀性的要求即可。可选的，第二主通道331的横截面积大于第二支通道332的横截面积，以保证气体流速满足要求。
进一步的，如图8A所示，多个第二匀气通道31一一对应地位于各个相邻的两个第二支通道332之间，且与相邻的第二支通道332相互平行，也就是说，第二匀气通道31与第二支通道332在第三匀气盘3的周向上相间排布；连接通道23的出气端23b与第二匀气通道31的中心位置相对应，这样可以使气体能够从第二匀气通道31的中心位置同时向第二匀气通道31的两端扩散，自中心位置到达出气端的最长距离缩小至约第三匀气盘3的半径的二分之一，从而可以有效提高气流速度，进而可以提高匀气效果和进气效率。可选的，第二匀气通道31为直通道。
每个第二匀气通道31的延伸方向上均匀分布有多个上述第一出气孔 32。由此，多个第二匀气通道31形成相对于第三匀气盘3的中心的对称结构。此外，如图8B所示，通过使第二匀气通道31与第二支通道332在第三匀气盘3的周向上相间排布，可以第一出气孔32与第二出气孔34相间排布，即，使多个第一出气孔32与多个第二出气孔34各自均能够均匀分布在第三匀气盘3上。在实际应用中，第一出气孔32与第二出气孔34可以为圆孔，直径范围例如为0.8mm-1.5mm，该直径范围既适用于ALD工艺快速匀气和快速进气的要求，又不会影响工艺均匀性，且节省耗气量。当然，根据不同的工艺，也可以适应性地设计出气孔的直径，例如对于CVD工艺，第一出气孔32与第二出气孔34的直径可以小于0.8mm。
在一些可选的实施例中，如图3B所示，每个第二匀气通道31对应的最边缘的两个第一出气孔32a分别紧邻该第二匀气通道31的两端(即，第二匀气通道31的两个气流末端)，可选的，第一出气孔32a与第二匀气通道31的端部边界之间的距离小于等于2mm；如图4B所示，每个第二支通道332对应的最边缘的第二出气孔34a紧邻第二支通道332的一端(即，第二支通道332的气流末端)，可选的，第二出气孔34a与第二支通道332的端部边界之间的距离小于等于2mm。这样设置，可以使气流扩散至第二匀气通道31两端的边界处以及第二支通道332一端的边界处，并从最边缘的第一出气孔32a和第二出气孔34a流出，从而可以避免因最边缘的出气孔与通道边界距离太大而导致气流在边界附近产生涡流，形成死区，死区中容易存留气体，不易被进气出去。
在一些可选的实施例中，如图3B所示，每个第一出气孔32靠近其出气端的一部分为渐扩孔321；如图4B所示，每个第二出气孔34靠近其出气端的一部分为渐扩孔341。借助上述渐扩孔321和渐扩孔341，可以起到发散气流的作用，从而使进入反应腔室中的反应气体能够均匀地扩散至晶圆表面，避免晶圆表面上与出气孔对应的区域与其他区域沉积的薄膜厚度产生差异， 从而可以提高工艺均匀性。
在一些可选的实施例中，在第一匀气盘1和第二匀气盘2彼此相对的两个表面中的至少一者设置有第一凹道，构成第一匀气通道22，例如，如图7A所示，第一凹道可以设置于第二匀气盘2的正面(即，相对于第一匀气盘1的表面)。类似的，在第二匀气盘2和第三匀气盘3彼此相对的两个表面中的至少一者设置有第二凹道，构成第二匀气通道31；在第二匀气盘2和第三匀气盘3彼此相对的两个表面中的至少一者设置有第三凹道，构成第三匀气通道33。例如，如图8A所示，第二凹道和第三凹道均设置于第三匀气盘3的正面(即，相对于第二匀气盘2的表面)。在这种情况下，如图6B所示，第一密封结构13和第二密封结构14可以设置于第一匀气盘1的背面(即，相对于第二匀气盘2的表面)；第三密封结构28和第四密封结构27可以设置于第二匀气盘2的背面(即，相对于第三匀气盘3的表面)。
在一些可选的实施例中，如图4B和图8A所示，第三匀气盘3的与第二进气孔211的出气端相对的表面上形成有导流凸部35，该导流凸部35的表面为弧形凸面。借助导流凸部35，可以起到均匀分流作用，避免气流在从第二进气孔211进入第二主通道331时，在第三匀气盘3的中心附近形成涡旋，影响匀气效果。
在一些可选的实施例中，多个第二支通道332中可能存在有第二支通道332的进气端直接与第二进气孔211的出气端相对的情况，例如，如图8A所示，有两个第二支通道332a的进气端直接与第二进气孔211的出气端相对，在这种情况下，可以将该第二支通道332a靠近其进气端的通道段的宽度相对于其他部分减小，以避免进入第二支通道332a的气体流量过大，影响整个匀气效果。
图9A为本发明实施例采用的部分第二匀气通道的流速均匀性仿真分析图。图9B为本发明实施例采用的部分第三匀气通道的流速均匀性仿真分析 图。如图9A所示，A1至A7，B1至B6分别对应竖直方向上的7条支路和水平方向上的6条支路，通过对气体从这些支路流动至出气孔的流速均匀性进行仿真分析获得六个流速均匀性系数K1至K6，部分第二匀气通道对应的六个流速均匀性系数具体为：K1＝6.5，K2＝6.83，K3＝2.22，K4＝2.22，K5＝2.32，K6＝1.88，均匀性系数明显小于图10C所示的六个流速均匀性系数；如图9B所示，A1至A7，B1至B6分别对应竖直方向上的7条支路和水平方向上的6条支路，通过对气体从这些支路流动至出气孔的流速均匀性进行仿真分析获得六个流速均匀性系数K1至K6，部分第三匀气通道对应的六个流速均匀性系数具体为：K1＝7.6，K2＝3.3，K3＝3.8，K4＝4.8，K5＝4.4，K6＝3.9，均匀性系数明显小于图10C所示的六个流速均匀性系数。由此可知，分别从第二匀气通道和第三匀气通道流动至相应的出气孔的流速均匀性均优于现有技术中的两层匀气结构，因此，本发明实施例提供的匀气装置可以有效提高工艺均匀性。
需要说明的是，在实际应用中，可以通过机械抛光或电化学抛光等方式对本发明实施例提供的匀气装置中的通道、孔的表面进行处理，以有效控制和改善通道、孔的表面质量，降低表面粗糙度，减少气体流阻，进而有效减少通道内部的颗粒数量，降低晶圆表面成膜的颗粒度。
综上所述，本发明实施例提供的匀气装置，通过采用分体式设计，即，包括沿进气方向依次设置的第一匀气盘、第二匀气盘和第三匀气盘，可以对三者的通道、孔等进行分体式加工，从而可以降低加工和组装难度，提高加工和安装重复性，降低加工成本；同时，加工过程中产生的颗粒物不容易遗留在匀气装置内，从而可以提高洁净度。此外，本发明提供的匀气装置，其第一进气孔和第二进气孔分别位于第一匀气盘和第二匀气盘的中心，且多个第一匀气通道、多个第二匀气通道和多个第三匀气通道均相对于第一匀气盘的中心对称分布，可以实现由第一进气孔、多个第一匀气通道、多个连接通 道、多个第二匀气通道构成的一种气路，与由第二进气孔、多个第三匀气通道构成的另一种气路均能够相对于第一匀气盘的中心对称分布，从而可以提高两种气体分别经由这两种气路进入反应腔室的气体分布均匀性，进而提高工艺均匀性。
作为另一个技术方案，本发明实施例还提供一种半导体工艺设备，包括反应腔室和设置在所述反应腔室顶部的匀气装置，该匀气装置采用本发明实施例提供的上述匀气装置，用于分别独立地向反应腔室内通入两种气体。
可选的，半导体工艺设备为ALD工艺设备。该匀气装置设置于ALD工艺设备的反应腔室的顶部，用于分别独立地向反应腔室内部通入两种气体，即使这两种气体在匀气装置中是相互隔离的。
本发明实施例提供的半导体工艺设备，其通过采用本发明实施例提供的上述匀气装置，不仅可以降低加工难度，提高洁净度，而且还可以提高匀气效果和进气效率。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

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  1. 一种匀气装置，应用于半导体工艺设备，其特征在于，包括沿进气方向依次设置的第一匀气盘、第二匀气盘和第三匀气盘，其中，所述第一匀气盘的中心设置有第一进气孔，所述第二匀气盘的中心设置有第二进气孔，所述第一进气孔与所述第二进气孔之间通过隔离件相互隔离；
    所述第一匀气盘和所述第二匀气盘之间形成有相对于所述第一匀气盘的中心对称分布的多个第一匀气通道，每个所述第一匀气通道的进气端均与所述第一进气孔连通；
    所述第二匀气盘上设置有多个连接通道，各个所述连接通道的进气端一一对应地与各个所述第一匀气通道的出气端连通；
    所述第二匀气盘与所述第三匀气盘之间设置有多个第二匀气通道和多个第三匀气通道，且多个所述第二匀气通道与多个所述第三匀气通道均相对于所述第一匀气盘的中心对称分布，且相互隔离；
    各个所述连接通道的出气端一一对应地与各个所述第二匀气通道连通；所述第三匀气盘上，且对应于每个所述第二匀气通道设置有多个第一出气孔，每个所述第一出气孔的进气端与对应的所述第二匀气通道连通，每个所述第一出气孔的出气端位于所述第三匀气盘背离所述第二匀气盘的表面；
    多个所述第三匀气通道的进气端均与所述第二进气孔连通，所述第三匀气盘上，且对应于每个所述第三匀气通道设置有多个第二出气孔，每个所述第二出气孔的进气端与对应的所述第三匀气通道连通，每个所述第二出气孔的出气端位于所述第三匀气盘背离所述第二匀气盘的表面。
  2. 根据权利要求1所述的匀气装置，其特征在于，所述第一匀气盘与所述第二匀气盘之间设置有第一密封结构和第二密封结构，其中，所述第一密封结构环绕于多个所述第一匀气通道的周围，用于密封多个所述第一匀气通道；
    所述第一匀气盘与所述第二匀气盘通过多个第一紧固件固定连接，且多个所述第一紧固件设置于所述第一密封结构的外侧；所述第二密封结构用于将所述第一紧固件穿设于所述第一匀气盘中的通孔与所述第一匀气盘和所述第二匀气盘之间的空间相隔离。
  3. 根据权利要求2所述的匀气装置，其特征在于，所述第一匀气盘在所述第一密封结构外侧划分有多个安装区域，多个所述安装区域相对于所述第一匀气盘的中心对称分布；每个所述安装区域中设置有至少一个所述第一紧固件；
    所述第二密封结构包括多个密封件，各个所述密封件一一对应地环绕设置于各个所述安装区域中的所述第一紧固件周围。
  4. 根据权利要求1所述的匀气装置，其特征在于，所述第二匀气盘与所述第三匀气盘之间设置有第三密封结构和第四密封结构，其中，所述第三密封结构用于将各个所述第二匀气通道与各个所述第三匀气通道相隔离；所述第四密封结构环绕设置于多个所述第二匀气通道、多个所述第三匀气通道和所述第三密封结构周围，用于密封多个所述第二匀气通道和多个所述第三匀气通道；
    所述第二匀气盘与所述第三匀气盘通过多个第二紧固件固定连接，多个所述第二紧固件位于所述第四密封结构的外侧，且沿所述第二匀气盘的周向间隔设置。
  5. 根据权利要求4所述的匀气装置，其特征在于，所述第三密封结构为由一条密封线沿各个所述第二匀气通道与各个所述第三匀气通道之间的间隔的延伸方向延伸形成的闭合结构。
  6. 根据权利要求1所述的匀气装置，其特征在于，所述隔离件为在所 述第二匀气盘的相对于所述第一匀气盘的表面上形成的凸台，所述凸台朝向所述第一匀气盘延伸至所述第一进气孔中，且与所述第一进气孔同轴，且间隔设置；
    所述凸台中形成有沿其轴向贯穿所述凸台和所述第二匀气盘的所述第二进气孔。
  7. 根据权利要求1所述的匀气装置，其特征在于，每个所述第一匀气通道均包括一个第一主通道和多个第一支通道，其中，
    所述第一主通道的一端汇聚于与所述第一进气孔相对的位置，所述第一主通道的另一端沿所述第二匀气盘的径向延伸至靠近所述第二匀气盘的边缘处；
    多个所述第一支通道分布于所述第一主通道两侧，每个所述第一支通道均与所述第一主通道呈第一夹角；相邻的两个所述第一主通道之间的所有所述第一支通道均相互平行；
    所述第一支通道的出气端与所述连接通道连通，所述连接通道与对应的所述第二匀气通道的中心位置相对应。
  8. 根据权利要求7所述的匀气装置，其特征在于，每个所述连接通道沿所述第二匀气盘的轴向贯通所述第二匀气盘，所述连接通道在所述第一支通道的延伸方向上的尺寸大于垂直于该延伸方向上的尺寸。
  9. 根据权利要求7所述的匀气装置，其特征在于，每个所述第三匀气通道均包括一个第二主通道和多个第二支通道，其中，
    所述第二主通道的一端汇聚于与所述第二进气孔相对的位置，所述第二主通道的另一端沿所述第三匀气盘的径向延伸至靠近所述第三匀气盘的边缘处；
    多个所述第二支通道分布于所述第二主通道两侧，每个所述第二支通道 均与所述第二主通道呈第二夹角，所述第二夹角与所述第一夹角相同；相邻的两个所述第二主通道之间的所有所述第二支通道均相互平行；
    每个所述第二支通道的延伸方向上均匀分布有多个所述第二出气孔。
  10. 根据权利要求9所述的匀气装置，其特征在于，各个所述第二匀气通道一一对应地位于各个相邻的两个所述第二支通道之间，且与相邻的所述第二支通道相互平行；
    每个所述第二匀气通道的延伸方向上均匀分布有多个所述第一出气孔。
  11. 根据权利要求10所述的匀气装置，其特征在于，每个所述第二匀气通道对应的最边缘的两个所述第一出气孔分别紧邻所述第二匀气通道的两端；每个所述第二支通道对应的最边缘的所述第二出气孔紧邻所述第二支通道的一端。
  12. 根据权利要求10所述的匀气装置，其特征在于，每个所述第一出气孔靠近其出气端的一部分为渐扩孔；每个所述第二出气孔靠近其出气端的一部分为渐扩孔。
  13. 根据权利要求1所述的匀气装置，其特征在于，在所述第一匀气盘和所述第二匀气盘彼此相对的两个表面中的至少一者设置有第一凹道，构成所述第一匀气通道；
    在所述第二匀气盘和所述第三匀气盘彼此相对的两个表面中的至少一者设置有第二凹道，构成所述第二匀气通道；在所述第二匀气盘和所述第三匀气盘彼此相对的两个表面中的至少一者设置有第三凹道，构成所述第三匀气通道。
  14. 根据权利要求1所述的匀气装置，其特征在于，所述第三匀气盘的 与所述第二进气孔的出气端相对的表面上形成有导流凸部，所述导流凸部的表面为弧形凸面。
  15. 一种半导体工艺设备，包括反应腔室和设置在所述反应腔室顶部的匀气装置，其特征在于，所述匀气装置采用权利要求1-14任意一项所述的匀气装置，用于分别独立地向所述反应腔室内通入两种气体。
PCT/CN2023/108197 2022-07-22 2023-07-19 匀气装置及半导体工艺设备 WO2024017303A1 (zh)

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