Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/83—Electrodes
  • H10H20/832—Electrodes characterised by their material
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
  • H10F77/146—Superlattices; Multiple quantum well structures
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F10/00—Individual photovoltaic cells, e.g. solar cells
  • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
  • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
  • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
  • H10F77/1433—Quantum dots
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/822—Materials of the light-emitting regions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
  • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells

Definitions

• the present invention relates to a superlattice film, in particular but not exclusively for photovoltaic devices such as thin film solar cells, and a modular device comprising a plurality of superlattice film.
• a solar cell or photovoltaic cell, is a device that converts the energy of light directly into electricity by the photovoltaic effect.
• the most relevant characteristic of a solar cell is its efficiency.
• the solar cells of the first generation also called conventional, traditional or wafer-based cells — are usually made of crystalline silicon and more precisely include materials such as polysilicon and monocrystalline silicon. Individual traditional solar cells are commonly combined to form modules, otherwise known as solar panels.
• the known thin film solar cells are normally made by depositing one or more thin layers , or thin film (TF) of photovoltaic material on a substrate, such as glass , plastic or metal .
• the thin film usually comprises materials such as cadmium telluride (CdTe) , copper indium gallium diselenide (CIGS ) , and amorphous thin-film silicon (a-Si , TF-Si ) .
• the film thickness varies from a few nanometers (nm) to tens of micrometers (pm) and thus the thin film solar cells are much thinner than the conventional silicon-based solar cells . This allows the thin film solar cells to be more flexible, and lower in weight and therefore more versatile than the crystalline silicon solar cells . Furthermore, these known thin film solar cells are cheaper than conventional crystalline silicon solar cells .
• thin film solar cells are commonly used in building integrated photovoltaics and as semi-transparent photovoltaic glazing material that can be laminated onto windows .
• thin film solar cells are less efficient than conventional crystalline silicon solar cells .
• the known thin film solar cells have a maximum efficiency of circa 10% .
• new materials which can be used as absorbing photovoltaic material in a thin film solar cells have been studied, among which there are superlattice structures .
• the superlattice to which reference is made is a periodic structure comprising an array of nanocrystals , also known as “quantum dots” or “quantum wires” , which are semiconductor particles a few nanometers in size . More precisely, such nanocrystals have a size that is less than the Bohr radius of the substance they are made of , so that they have peculiar optical and electronic properties due to quantum effects .
• photovoltaic superlattices are isotropic structures wherein the nanocrystals are, in practice, shuffled.
• the currently used thin film solar cells having superlattice as absorbing photovoltaic material have an efficiency of about 8%-12% .
• WO 2021/070169 discloses an improved superlattice structure for thin film solar cells which comprises a plurality of superimposed layers of nanocrystals and is configured to generate a flow of electrons across said layers when it is irradiated by a radiation .
• Each of the layers comprises an array of nanocrystals which have substantially the same size and shape and the nanocrystals of each of said layers have different size and/or different shape with respect to the nanocrystals of the other layers .
• the layers are sorted in such an order that the superlattice structure is anisotropic along the cross direction along which the electrical conductivity is required.
• the superlattice structure disclosed by WO 2021/070169 substantially improves the efficiency of a thin film solar cell , however further improvements are still possible and desirable, especially in terms of efficiency and versatility .
• the aim of the present invention is to solve the technical problem described above , obviates the drawbacks and overcomes the limitations of the background art, providing a superlattice film that has improved efficiency with respect to the prior art .
• an obj ect of the invention is to provide a superlattice film that is easy to manufacture and at competitive costs .
• an obj ect of the present invention is to provide a superlattice fil that is highly versatile .
• Another obj ect of the present invention is to also provide an alternative to known solutions .
• a superlattice film comprising a superlattice structure that is arranged between a first conductor and a second conductor and comprises a plurality of superimposed layers of nanocrystals ; wherein each of said layers comprises an array of nanocrystals which have a same energy gap, and wherein said layers are sorted by the energy gap of the nanocrystals in ascending order from said first conductor towards said second conductor, so that a maximum energy gap layer is adj acent to said first conductor and a minimum energy gap layer is adj acent to said second conductor; said superlattice film further comprising at least one among :
• Figure 1 is a schematic representation of a superlattice film, according to the invention.
• Figure 2 is a schematic representation of a superlattice structure included in the superlattice film, according to the invention.
• Figure 3 is a schematic representation of an alternative superlattice structure
• Figure 4 is a schematic representation of a superlattice film, according to the invention, in use in a photovoltaic device ;
• Figure 5 is a schematic representation of a modular device comprising two superlattice films , according to the invention . It should be noted that the above-mentioned drawings must be intended as schematic, since they do not reflect the exact proportions , in order to better show the underlying structure of the invention .
• the superlattice film generally designated by the reference numeral 1 , comprises a superlattice structure 10 that is arranged between a first conductor 91 and a second conductor 92 (i . e . electrically conductive elements ) .
• the conductors 91 , 92 are preferably conductive layers .
• the superlattice structure 10 , 100 comprises a plurality of superimposed layers 4A-4L (or 2A-2E and 3A-3D in fig . 3 ) of nanocrystals 41-50 (or 21-25 and 31-34 in fig . 3 ) .
• Each of the layers 4A-4L; 2A-2E ; 3A-3D comprises an array of nanocrystals 41-50 , 21-25 , 31-34 which have the same energy gap (as known, the energy gap in a nanocrystal is the difference of energy between the bottom of the conduction band and the top of the valence band of the electrons ) .
• the energy gap in a nanocrystal is the difference of energy between the bottom of the conduction band and the top of the valence band of the electrons
• all the nanocrystals of a same layer 4A-4L; 2A-2E ; 3A-3D have the same size and shape . It is useful to specify that the term "shape" , in the present description and in the attached claims , is understood to reference the mere geometry ( i . e the geometric structure) of a nanocrystal , regardless of its size .
• the layers 2A-2L; 3A-3L; 4A-4L are sorted by the energy gap of the nanocrystals 41-50 , 21-25 , 31-34 in ascending order from the first conductor 91 towards the second conductor 92 .
• the layers 2A-2L, 3A-3L, 4A-4L are sorted in such an order that the energy gap of the nanocrystals 41-50 , 21-25 , 31-34 decreases from the first conductor 91 to the second conductor 92 .
• all the layers 4A-4L; 2A-2E , 3A- 3E are sorted by the size of the nanocrystals 21-25 , 31-34 in ascending order (along the cross direction Y along which the electrical conductivity is required) from the first conductor 91 to the second conductor 92.
• the energy gap in a nanocrystal is inversely proportional to the size of the nanocrystal.
• a maximum energy gap layer 4L, 2E i.e. the layer that comprises the nanocrystals 50 having the maximum energy gap
• a minimum energy gap layer 4A; 2 A i.e. the layer that comprises the nanocrystal having the minimum energy gap
• the electrons e- are induced to flow along the cross-direction Y, from the maximum energy gap layer 4L towards the minimum energy gap layer 4L, and not vice versa
• the nanocrystals are depicted as spherical only for simplicity, to indicate any possible shape: the nanocrystals 41-50 can have any suitable shape, such as hexadecahedronal, pentahedronal, octahedral, cuboctahedral, hexagonal, etc .
• all the nanocrystals 41-50 of the same layer 4A-4L have the same size, and thus each layer 4A-4L differs from the others only for the size of the nanocrystals 41-50.
• the superlattice structure 100 comprises layers of a first type 2A-2E which comprise nanocrystals having a first shape, and layers of a second type 3A-3D which comprise nanocrystals having a second shape that is different from said first shape; in this case the layers of the first 2A-2E type are alternated with the layers of the second type 3A-3D.
• composition of the nanocrystals 21-25, 31-34 they are made of semiconductor materials such as: CdS, CdSe, CdTe, InP, InAs, ZnS, ZnSe, HgTe, GaN, GaP, GaAs, GaSb, InSb, Si, Ge, AlAs, AlSb, PbSe, PbS, PbTe, InGaAs, InGaN, AlInGaP.
• the nanocrystals 21- 25, 31-34 are made of one or more of the following materials: PbSe, PbS, PbTe, CdS, CdSe, CdTe.
• all the nanocrystals 21-25, 31-34 are made of the same material.
• the superlattice structure 10, 100 can be any superlattice structure described in WO 2021/070169.
• the nanocrystals 41-50 are fixed in predetermined positions within the layers 4A-4L in such a way that they have both an energetic and a mechanical alignment .
• the nanocrystals are fixed in predetermined positions in such a way that they have energetic alignment .
• the energy gaps of the nanocrystals are aligned so as to allow the electrons e ⁇ (excited by radiation S absorption) to transverse the whole superlattice structure 10 , 100 .
• the nanocrystals 41-50 21-25 , 31-34 are fixed in predetermined positions in such a way that they have a shape directional alignment .
• the shapes and the orientations of the nanocrystals 41-50 21-25 , 31-34 are provided so that the nanocrystals have not only an energetic alignment , but also a mechanical alignment .
• the nanocrystals 41-50 , 21-25 , 31-34 are fixed in predetermined positions , within said layers 4A-4L, 2A- 2E , 3A-3E , in such a way that they have both an energetic and a mechanical alignment .
• the gaps and connections between the nanocrystals 21-25 , 31-34 is controlled by the Ligand molecules that are connected to the nanocrystals 21-25 , 31-34 .
• the superlattice film 1 further comprises at least one among :
• the superlattice film 1 comprises both said electron transport layer 82 and said electron blocking layer 81.
• an electron transport layer 82 is layer that has physical properties (such as charge mobility, energy level alignment, defect states, morphology, and related interfacial properties) which make it useful in extracting and transporting excited electron carriers and serves as a hole-blocking layer by suppressing charge recombination.
• the electron transport layer 82 can be made of one of the following materials: Sn02, CdSe, W03, ZnSnO4, ZnO, Pbl2, Ti02, SrTiO3, CH3NH3Bbl3, Zn02, SnO .
• an electron blocking layer 81 has substantially the opposite effect of the electron transport layer and it reduces the leakage of electrons toward the first conductor 91.
• the electron blocking layer 81 can be made of one of the following materials: Spiro-OMeTAD, PEDOT:PSS, PTAA (poly [bis (4-phenyl) (2 , 4 , 6- trimethylphenyl) mine] ) , P3HT, DM, TAT-tBuSty, X26, X36, FDT, SCZF-5, TTE, PTEG, Cuprous oxide (Cu 2 O) , cupric oxide (CuO) , Copper (I) thiocyanate (CuSCN) , Copper (I) iodide (Cui) , Nickel oxide (NiO x ) , M0S2, WS2, SANs, Cu(Tu)I, MnS, CuS, copper indium gallium disulfide (CIGS) nanocrystals such as Cu (Ino.75Gao.25) S2 and Cu(Ino.5Ga 0.5) S2.
• PTAA poly [bis (4-phenyl) (2
• the presence of the electron transport layer 82 and/or electron blocking layer 81 extends the work function between the conductor 91, 92 and the nanocrystals and thus increases the efficiency of the superlattice film 1, in particular when used as a photovoltaic device.
• At least one conductor (namely the first conductor 91) is at least partially transparent to the light, preferably transparent to the visible light, even more preferably completely transparent to the light.
• Figure 4 shows the superlattice film 1 in use as photovoltaic device (as a solar cell) : the first conductor 91 and the second 9 conductor 92 are connected via an electric circuit so that, in consequence of the solar radiation S, the electrons e ⁇ flow along the cross direction Y from the first conductor 91 to the second conductor 92 (and consequently a current c flows in the circuit in the opposite direction) .
• Two or more superlattice films 10 can be combined to form a modular device 110 , such as the one depicted in figure 5 .
• the modular device 110 comprises at least two superlattice films 1 , 1 ' , a first superlattice film 1 and a second superlattice film 1 ' , which are stacked on top of each other, along the cross direction Y, so that the minimum energy gap layer 4A of the first superlattice film 1 faces the minimum energy gap layer 4A' of the second superlattice film 1 ' .
• a conductive layer 92 is interposed between the minimum energy gap layer 4A of the first superlattice film 1 and the minimum energy gap layer 4A' of the second superlattice film 1 ' , so that this single conductive layer 92 constitutes the second conductor 92 of both said first 1 and second 1 ' superlattice film 1 .
• the modular device 110 can comprise further superlattice films stacked in the same manner : for example at least a third superlattice film (not illustrated) that is stacked on the second superlattice film 1 ' so that the maximum energy gap layer of the third superlattice film faces the maximum energy gap layer 4L' of the second superlattice film 1 ' ; in this case , a single conductive layer constitutes the first conductor 91 ' of both said second 1 ' and third superlattice films .
• a fourth superlattice film can be stacked on the third superlattice film so that the minimum energy gap layer of the fourth superlattice film faces the minimum energy gap layer of the third superlattice film 1 ' , and so on .
• the modular device 110 comprises a series of superlattice structures 10 , 100 alternated with conductive layers 91 , 92 .
• the conductors 911 , 92 , 91 ' are electrically connected to generate a current in a circuit when the modular device 110 is irradiated by the light .
• the superlattice structure 10 it is provided a gradient that produces a "super conductor" in the electrical conductivity direction (the cross direction Y) and thus the superlattice film 1 (as well as the modular device 110 ) is usable for any application that requires such a behavior (e . g . for making supercapacitors ) .
• the sole superlattice structure 10 can be used for applications which require a "super conductor” behavior, such as supercapacitors .
• the superlattice film according to the present invention achieves the intended aim and obj ects , since it allows to improve the efficiency with respect to prior art .
• Another advantage of the superlattice film, according to the invention resides in that it allows to provide a thin film solar cell that is highly versatile .
• a further advantage of the superlattice film, according to the invention resides in that it is highly reliable, relatively easy to manufacture and at competitive costs .
• the superlattice film provides an alternative to known solutions .
• the materials used, as well as the dimensions may be any according to the requirements and the state of the art .

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Citations (5)

• 2023
  • 2023-07-12 WO PCT/IL2023/050727 patent/WO2024013746A1/en not_active Ceased
  • 2023-07-12 KR KR1020257000969A patent/KR20250036132A/ko active Pending
  • 2023-07-12 IL IL318242A patent/IL318242A/en unknown
  • 2023-07-12 EP EP23744577.0A patent/EP4555558A1/en active Pending
  • 2023-07-12 CN CN202380052745.XA patent/CN119605333A/zh active Pending
  • 2023-07-12 JP JP2025501451A patent/JP2025523677A/ja active Pending
  • 2023-07-12 AU AU2023305168A patent/AU2023305168A1/en active Pending
  • 2023-07-12 US US18/992,851 patent/US20260020370A1/en active Pending

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