KR20250036132A - 개선된 초격자 필름 - Google Patents

개선된 초격자 필름 Download PDF

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Publication number
KR20250036132A
KR20250036132A KR1020257000969A KR20257000969A KR20250036132A KR 20250036132 A KR20250036132 A KR 20250036132A KR 1020257000969 A KR1020257000969 A KR 1020257000969A KR 20257000969 A KR20257000969 A KR 20257000969A KR 20250036132 A KR20250036132 A KR 20250036132A
Authority
KR
South Korea
Prior art keywords
conductor
superlattice film
layer
superlattice
energy gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257000969A
Other languages
English (en)
Korean (ko)
Inventor
마탄 아르벨
Original Assignee
아르벨 에너지 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아르벨 에너지 엘티디 filed Critical 아르벨 에너지 엘티디
Publication of KR20250036132A publication Critical patent/KR20250036132A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
KR1020257000969A 2022-07-12 2023-07-12 개선된 초격자 필름 Pending KR20250036132A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263388401P 2022-07-12 2022-07-12
US63/388,401 2022-07-12
PCT/IL2023/050727 WO2024013746A1 (en) 2022-07-12 2023-07-12 Improved superlattice film

Publications (1)

Publication Number Publication Date
KR20250036132A true KR20250036132A (ko) 2025-03-13

Family

ID=87426555

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257000969A Pending KR20250036132A (ko) 2022-07-12 2023-07-12 개선된 초격자 필름

Country Status (8)

Country Link
US (1) US20260020370A1 (https=)
EP (1) EP4555558A1 (https=)
JP (1) JP2025523677A (https=)
KR (1) KR20250036132A (https=)
CN (1) CN119605333A (https=)
AU (1) AU2023305168A1 (https=)
IL (1) IL318242A (https=)
WO (1) WO2024013746A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025210625A1 (en) * 2024-04-03 2025-10-09 Arbell Energy Ltd. Active low-e transparent structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
KR20140092521A (ko) * 2013-01-14 2014-07-24 삼성전자주식회사 흡광 물질 및 상기 흡광 물질을 포함하는 태양 전지
JP6355085B2 (ja) * 2013-02-07 2018-07-11 シャープ株式会社 光電変換素子
JP6030971B2 (ja) * 2013-02-13 2016-11-24 シャープ株式会社 受光素子および受光素子を備えた太陽電池
EP4042488A4 (en) 2019-10-07 2024-01-03 Arbell Energy Ltd Improved superlattice structure for thin film solar cells

Also Published As

Publication number Publication date
WO2024013746A1 (en) 2024-01-18
AU2023305168A1 (en) 2025-01-30
JP2025523677A (ja) 2025-07-23
CN119605333A (zh) 2025-03-11
US20260020370A1 (en) 2026-01-15
IL318242A (en) 2025-03-01
EP4555558A1 (en) 2025-05-21

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20250110

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application