CN119605333A - 改进的超晶格膜 - Google Patents

改进的超晶格膜 Download PDF

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Publication number
CN119605333A
CN119605333A CN202380052745.XA CN202380052745A CN119605333A CN 119605333 A CN119605333 A CN 119605333A CN 202380052745 A CN202380052745 A CN 202380052745A CN 119605333 A CN119605333 A CN 119605333A
Authority
CN
China
Prior art keywords
conductor
superlattice
layer
superlattice film
nanocrystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380052745.XA
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English (en)
Chinese (zh)
Inventor
马坦·阿贝尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Abel Energy Co ltd
Original Assignee
Abel Energy Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abel Energy Co ltd filed Critical Abel Energy Co ltd
Publication of CN119605333A publication Critical patent/CN119605333A/zh
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/832Electrodes characterised by their material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146Superlattices; Multiple quantum well structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17Photovoltaic cells having only PIN junction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433Quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
CN202380052745.XA 2022-07-12 2023-07-12 改进的超晶格膜 Pending CN119605333A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263388401P 2022-07-12 2022-07-12
US63/388,401 2022-07-12
PCT/IL2023/050727 WO2024013746A1 (en) 2022-07-12 2023-07-12 Improved superlattice film

Publications (1)

Publication Number Publication Date
CN119605333A true CN119605333A (zh) 2025-03-11

Family

ID=87426555

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380052745.XA Pending CN119605333A (zh) 2022-07-12 2023-07-12 改进的超晶格膜

Country Status (8)

Country Link
US (1) US20260020370A1 (https=)
EP (1) EP4555558A1 (https=)
JP (1) JP2025523677A (https=)
KR (1) KR20250036132A (https=)
CN (1) CN119605333A (https=)
AU (1) AU2023305168A1 (https=)
IL (1) IL318242A (https=)
WO (1) WO2024013746A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025210625A1 (en) * 2024-04-03 2025-10-09 Arbell Energy Ltd. Active low-e transparent structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
KR20140092521A (ko) * 2013-01-14 2014-07-24 삼성전자주식회사 흡광 물질 및 상기 흡광 물질을 포함하는 태양 전지
JP6355085B2 (ja) * 2013-02-07 2018-07-11 シャープ株式会社 光電変換素子
JP6030971B2 (ja) * 2013-02-13 2016-11-24 シャープ株式会社 受光素子および受光素子を備えた太陽電池
EP4042488A4 (en) 2019-10-07 2024-01-03 Arbell Energy Ltd Improved superlattice structure for thin film solar cells

Also Published As

Publication number Publication date
KR20250036132A (ko) 2025-03-13
WO2024013746A1 (en) 2024-01-18
AU2023305168A1 (en) 2025-01-30
JP2025523677A (ja) 2025-07-23
US20260020370A1 (en) 2026-01-15
IL318242A (en) 2025-03-01
EP4555558A1 (en) 2025-05-21

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