AU2023305168A1 - Improved superlattice film - Google Patents

Improved superlattice film Download PDF

Info

Publication number
AU2023305168A1
AU2023305168A1 AU2023305168A AU2023305168A AU2023305168A1 AU 2023305168 A1 AU2023305168 A1 AU 2023305168A1 AU 2023305168 A AU2023305168 A AU 2023305168A AU 2023305168 A AU2023305168 A AU 2023305168A AU 2023305168 A1 AU2023305168 A1 AU 2023305168A1
Authority
AU
Australia
Prior art keywords
conductor
superlattice
superlattice film
energy gap
nanocrystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
AU2023305168A
Other languages
English (en)
Inventor
Matan ARBELL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arbell Energy Ltd
Original Assignee
Arbell Energy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arbell Energy Ltd filed Critical Arbell Energy Ltd
Publication of AU2023305168A1 publication Critical patent/AU2023305168A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/832Electrodes characterised by their material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146Superlattices; Multiple quantum well structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17Photovoltaic cells having only PIN junction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433Quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
AU2023305168A 2022-07-12 2023-07-12 Improved superlattice film Pending AU2023305168A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263388401P 2022-07-12 2022-07-12
US63/388,401 2022-07-12
PCT/IL2023/050727 WO2024013746A1 (en) 2022-07-12 2023-07-12 Improved superlattice film

Publications (1)

Publication Number Publication Date
AU2023305168A1 true AU2023305168A1 (en) 2025-01-30

Family

ID=87426555

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2023305168A Pending AU2023305168A1 (en) 2022-07-12 2023-07-12 Improved superlattice film

Country Status (8)

Country Link
US (1) US20260020370A1 (https=)
EP (1) EP4555558A1 (https=)
JP (1) JP2025523677A (https=)
KR (1) KR20250036132A (https=)
CN (1) CN119605333A (https=)
AU (1) AU2023305168A1 (https=)
IL (1) IL318242A (https=)
WO (1) WO2024013746A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025210625A1 (en) * 2024-04-03 2025-10-09 Arbell Energy Ltd. Active low-e transparent structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
KR20140092521A (ko) * 2013-01-14 2014-07-24 삼성전자주식회사 흡광 물질 및 상기 흡광 물질을 포함하는 태양 전지
JP6355085B2 (ja) * 2013-02-07 2018-07-11 シャープ株式会社 光電変換素子
JP6030971B2 (ja) * 2013-02-13 2016-11-24 シャープ株式会社 受光素子および受光素子を備えた太陽電池
EP4042488A4 (en) 2019-10-07 2024-01-03 Arbell Energy Ltd Improved superlattice structure for thin film solar cells

Also Published As

Publication number Publication date
KR20250036132A (ko) 2025-03-13
WO2024013746A1 (en) 2024-01-18
JP2025523677A (ja) 2025-07-23
CN119605333A (zh) 2025-03-11
US20260020370A1 (en) 2026-01-15
IL318242A (en) 2025-03-01
EP4555558A1 (en) 2025-05-21

Similar Documents

Publication Publication Date Title
US12211656B2 (en) Photovoltaic structure and method of fabrication
US8426722B2 (en) Semiconductor grain and oxide layer for photovoltaic cells
EP2577746B1 (en) Photovoltaic devices with multiple junctions separated by a graded recombination layer
US8158880B1 (en) Thin-film photovoltaic structures including semiconductor grain and oxide layers
CN103688366B (zh) 半导体异质结构和包括该异质结构的光伏电池
US20250107269A1 (en) Superlattice structure for thin film solar cells
US20260020370A1 (en) Improved superlattice film
WO2008052067A2 (en) Semiconductor grain and oxide layer for photovoltaic cells
US20110155233A1 (en) Hybrid solar cells
KR101891391B1 (ko) PbS계 양자점, 이의 제조 방법 및 이를 포함하는 PbS계 양자점 감응형 태양전지
US12074241B2 (en) Direct semiconductor solar devices
Manthina et al. Photovoltaics: Current and Emerging Technologies and Materials for Solar Power Conversion