WO2024010022A1 - 基板、電子装置、電子モジュールおよびモジュール装置 - Google Patents

基板、電子装置、電子モジュールおよびモジュール装置 Download PDF

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Publication number
WO2024010022A1
WO2024010022A1 PCT/JP2023/024868 JP2023024868W WO2024010022A1 WO 2024010022 A1 WO2024010022 A1 WO 2024010022A1 JP 2023024868 W JP2023024868 W JP 2023024868W WO 2024010022 A1 WO2024010022 A1 WO 2024010022A1
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WIPO (PCT)
Prior art keywords
recess
substrate
recesses
substrate according
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/024868
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English (en)
French (fr)
Japanese (ja)
Inventor
広一朗 菅井
恭太 島田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
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Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to US18/879,110 priority Critical patent/US20250392096A1/en
Priority to JP2024532602A priority patent/JPWO2024010022A1/ja
Priority to DE112023002939.3T priority patent/DE112023002939T5/de
Priority to CN202380049764.7A priority patent/CN119487977A/zh
Publication of WO2024010022A1 publication Critical patent/WO2024010022A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10416—Metallic blocks or heatsinks completely inserted in a PCB
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations

Definitions

  • the present disclosure relates to a substrate on which electronic elements are mounted.
  • Patent Document 1 and Patent Document 2 there are known substrates on which electronic devices are mounted, which have improved thermal conductivity in order to quickly dissipate heat generated from the electronic devices. ing.
  • a substrate includes a first surface, a second surface located on the opposite side of the first surface, at least one first recess opened in the first surface, and an opening in the second surface.
  • FIG. 1 is a perspective view of a module device according to Embodiment 1 of the present disclosure.
  • FIG. 3 is a top view of the module device.
  • FIG. 3 is a sectional view taken along line III-III in FIG. 2;
  • FIG. 2 is a top view of a substrate according to Embodiment 1 of the present disclosure.
  • 1 is a diagram of a substrate and an electronic device according to Embodiment 1 of the present disclosure, viewed from the Y-axis direction.
  • FIG. FIG. 3 is a top view of a substrate according to Embodiment 2 of the present disclosure.
  • FIG. 3 is a diagram of a substrate and an electronic device according to Embodiment 2 of the present disclosure, viewed from the Y-axis direction.
  • FIG. 7 is a top view of a substrate according to Embodiment 3 of the present disclosure.
  • FIG. 7 is a diagram of a substrate and an electronic device according to Embodiment 3 of the present disclosure, viewed from the Y-axis direction.
  • FIG. 7 is a top view of a substrate according to Embodiment 4 of the present disclosure.
  • 11 is a sectional view taken along the line XI-XI in FIG. 10.
  • FIG. 11 is a sectional view taken along the line XII-XII in FIG. 10;
  • FIG. 7 is a top view of a substrate according to Embodiment 5 of the present disclosure.
  • FIG. 7 is a diagram of a substrate and an electronic device according to Embodiment 5 of the present disclosure, viewed from the Y-axis direction.
  • thermal conductivity can be improved.
  • FIG. 1 is a perspective view of a module device 1 in this embodiment.
  • FIG. 2 is a top view of the module device 1.
  • FIG. 3 is a sectional view taken along the line III--III in FIG. 2.
  • the X-axis direction in FIG. This will be explained as a direction (vertical direction).
  • the +X-axis direction is rightward, the -X-axis direction is leftward, the +Y-axis direction is backward, the -Y-axis direction is forward, the +Z-axis direction is upward, and the -Z-axis direction is downward. It will be explained as follows.
  • the module device 1 includes an electronic module 10 and a housing 2 in which the electronic module 10 is mounted.
  • the housing 2 may be composed of, for example, a cooling plate. Thereby, the electronic module 10 can be cooled.
  • the number of electronic modules included in the module device 1 may be one, or two or more.
  • the electronic module 10 may be mounted on a module board (not shown) instead of the housing 2.
  • the electronic module 10 includes a case 11, a fixing member 12, and an electronic device 20.
  • the case 11 has a housing space 11a at the center in the second direction (left-right direction), and the electronic device 20 is housed inside the housing space 11a.
  • the case 11 is fixed to the housing 2 by a fixing member 12.
  • the fixing member 12 may be, for example, a screw.
  • the material of the case 11 may be metal.
  • the electronic device 20 includes an electronic element 21, a substrate 30A, a metal plate 22, and a heat sink 23 in this order from above.
  • the electronic device 21 in this embodiment is configured with a laser diode or the like that can emit laser, and the electronic device 20 irradiates the laser emitted from the electronic device 21 to the outside.
  • the substrate 30A is required to have high heat dissipation properties. Further, a part of the heat conducted to the heat sink 23 is conducted to the casing 2 made of a cooling plate via the case 11, and is radiated in the casing 2.
  • the board 30A is an electronic element mounting board on which the electronic element 21 is mounted.
  • the substrate 30A may be used to mount heat-generating components other than electronic elements.
  • FIG. 4 is a top view of the substrate 30A.
  • an electronic element mounting portion 41a and a recess 50, which will be described later, are shown with dotted lines, and the recess 50 formed in the second surface 42 is shown with hatching.
  • FIG. 5 is a diagram of the substrate 30A and the electronic element 21 viewed from the third direction (front-back direction). In FIG. 5, the recess 50 is indicated by a dotted line.
  • the substrate 30A includes a base body 40A, a metal member 51, a first conductive film layer 31, and a second conductive film layer 32.
  • the base 40A may consist of a single layer or multiple layers.
  • the base 40A in this embodiment is a single insulating layer as shown in FIG.
  • the base 40A has a first surface 41 on which the electronic element 21 is mounted, a second surface 42 located on the opposite side of the first surface, and a recess 50.
  • the recess 50 having an opening on the first surface 41 may be described as a first recess 50A, and the recess 50 having an opening on the second surface 42 as a second recess 50B.
  • the first surface 41 and the second surface 42 are opposed to each other.
  • the first surface 41 includes an electronic element mounting section 41a in which the electronic element 21 is mounted at the center in the second direction.
  • the shape of the base 40A when viewed from above is not particularly limited, and may be, for example, rectangular or circular.
  • the base body 40A in this embodiment has a rectangular shape when viewed from above.
  • the description of "flat” or “plane” does not require that it be strictly flat or strictly flat.
  • the base 40A may have insulating properties.
  • the material of the base 40A is, for example, a ceramic such as an aluminum nitride sintered body, an aluminum oxide sintered body (alumina ceramics), a silicon nitride sintered body, a mullite sintered body, or a glass ceramic sintered body. It may be.
  • the material of the base 40A is an aluminum nitride sintered body
  • the base 40A contains aluminum nitride as a main component.
  • the base 40A when the mass of the base 40A is 100% by mass, the base 40A contains 80% by mass or more of aluminum nitride.
  • the base body 40A may contain 95% by mass or more of aluminum nitride. Thereby, the thermal conductivity of the base 40A can be easily set to 170 W/mK or more, so that the heat dissipation performance of the base 40A can be increased.
  • the base 40A has at least one recess 50 on each of the first surface 41 and the second surface 42.
  • the base body 40A has a plurality of recesses 50 on each of the first surface 41 and the second surface 42.
  • the recess 50 may have a cavity structure.
  • the opening of the recess 50 may have a circular shape when the substrate 30A is viewed in plan from the first direction.
  • the recess 50 has a bottom.
  • the method of arranging the plurality of recesses 50 is not particularly limited, but for example, as shown in FIG. As such, on each of the first surface 41 and the second surface 42, the four adjacent recesses 50 may be arranged at the apexes of the rectangle. In other words, the plurality of recesses 50 may be arranged in grid-like positions on each of the first surface 41 and the second surface 42. As a result, when the substrate 30A is viewed in plan, the plurality of recesses 50 are evenly arranged, so that variations in heat dissipation of the substrate 30A are less likely to occur.
  • the first recess 50A provided in the first surface 41 is cut along a plane parallel to the first direction (i.e., the vertical direction) orthogonal to the first surface 41 and the second surface 42. In the cross section, it may become thinner as the distance from the first surface 41 increases. In other words, in a cross section cut along a plane parallel to the first direction, the width of the first recess 50A in the second direction decreases as the distance from the first surface 41 on which the first recess 50A is provided increases. It may be.
  • the shape of the first recessed portion 50A may be a curved shape that is convex from the first surface 41 toward the second surface 42 in a cross section taken in the first direction.
  • the cross section of the first recess 50A taken along a plane parallel to the first direction may have an elliptical hemispherical shape.
  • the second recess 50B provided in the second surface 42 may become thinner as the distance from the second surface 42 increases in a cross section cut along a plane parallel to the first direction. good.
  • the width of the second recess 50B in the second direction decreases as the distance from the second surface 42 on which the second recess 50B is provided increases. It may be.
  • the shape of the second recess 50B may be a curved shape that is convex from the second surface 42 toward the first surface 41 in a cross section taken in the first direction.
  • the recess 50 can be formed by blasting the first surface 41 or the second surface 42. By forming the recess 50 by blasting, the inner surface of the recess 50 can be formed into a curved shape, as shown in FIG.
  • the opening areas of the plurality of recesses 50 are the same when the base body 40A is viewed from above, but the opening area of the plurality of recesses 50 is not limited to this. Good too.
  • An example in which the opening areas of the plurality of recesses 50 are not the same will be described in Embodiment 2.
  • the depths of the plurality of recesses 50 are the same, but the depth is not limited to this, and the depths of the plurality of recesses 50 may be different from each other.
  • the shape of the recess 50 is not limited to the above shape as long as the recess 50 is formed on each of the first surface 41 and the second surface 42.
  • the shape of the recess 50 may be, for example, cylindrical.
  • the inside of the recess 50 is filled with a metal member 51 having a higher thermal conductivity than that of the base 40A.
  • the metal member 51 is not particularly limited as long as it has a thermal conductivity higher than that of the base 40A.
  • the material of the base 40A is an aluminum nitride sintered body, it may be made of copper, copper-tungsten, It may be copper-molybdenum, aluminum, etc.
  • a plating method such as an electrolytic plating method or a metallization method can be used.
  • the metal member 51 located inside the first recess 50A may be distinguished from the first metal member 51A, and the metal member 51 located inside the second recess 50B may be described as the second metal member 51B. .
  • the base body 40A has a first recess 50A formed in the first surface 41 and a second recess 50B formed in the second surface 42 in at least one direction perpendicular to the first direction when viewed through the plane. They may be arranged alternately.
  • the centers of the openings of the first recesses 50A and the centers of the openings of the second recesses 50B are alternately arranged on the straight line L shown in FIG.
  • the plurality of recesses 50 are evenly arranged on the first surface 41 and the second surface 42, so that variations in the overall heat dissipation of the base body 40A are less likely to occur.
  • the first recess 50A provided on the first surface 41 does not overlap with the second recess 50B provided on the second surface 42. It can be provided in the area. Thereby, the first conductive film layer 31 and the second conductive film layer 32 can be prevented from being electrically connected.
  • the term "vertical" does not necessarily mean strictly vertical.
  • the base body 40A may have at least one set of recesses 50, in which a portion of the first recess 50A overlaps with the second recess 50B when viewed from a plane perpendicular to the first direction.
  • the first recess 50A formed on the first surface 41 is formed deeper than the center of the base body 40A in the first direction, and the first recess 50A formed on the second surface 42 This may be realized by forming the second recess 50B deeper than the center of the base 40A in the first direction. According to this configuration, the volume of the recess 50 formed in the base 40A can be increased, so that the thermal conductivity of the substrate 30A can be improved.
  • the substrate 30A may have a thin film layer (not shown) on the surface of the recess 50, the first surface 41, and the second surface 42.
  • the thin film layer may be comprised of, for example, tantalum nitride, nickel-chromium, nickel-chromium-silicon, tungsten-silicon, molybdenum-silicon, tungsten, molybdenum, titanium, chromium, and the like.
  • the thin film layer can be formed by a formation technique such as a vapor deposition method, an ion plating method, or a sputtering method.
  • the inner surface of the recess 50 and the metal member 51 are bonded, and the first surface 41 and the first surface 42 are bonded. Bonding with the conductor film layer 31, bonding between the metal member 51 and the first conductor film layer 31, bonding between the second surface 42 and the second conductor film layer 32, and bonding between the metal member 51 and the second conductor film layer 32. Good bonding can be achieved.
  • the first conductive film layer 31 is located on the first surface 41 of the base 40A, as shown in FIG.
  • the first conductive film layer 31 is connected to the first metal member 51A filled in the first recess 50A.
  • the first conductive film layer 31 is connected to each of the first metal members 51A filled in the plurality of first recesses 50A provided on the first surface 41.
  • the first conductive film layer 31 is made of a material with excellent electrical conductivity, such as copper.
  • the first conductive film layer 31 is formed on the first surface 41 in two regions.
  • the electronic device 21 is mounted on one first conductor film layer 31 .
  • the other first conductive film layer 31 is used as a connection part for a connection member 33 such as a bonding wire, and electrically connects the electronic element 21 and a wiring conductor of a wiring board (not shown).
  • a connection member 33 such as a bonding wire
  • the electronic element 21 is mounted on the first conductive film layer 31
  • the electronic element 21 is mounted on the first conductive film layer 31.
  • the description will be made assuming that this is synonymous with "mounted on the electronic element mounting portion 41a of the first surface 41.”
  • the first conductive film layer 31 is formed on the first surface 41 and has a higher thermal conductivity than that of the base 40A.
  • the first conductive film layer 31 is not particularly limited as long as it has a thermal conductivity higher than that of the base 40A.
  • the material of the base 40A is an aluminum nitride sintered body, copper, copper, etc. - May be tungsten, copper-molybdenum, aluminum, etc.
  • the first conductive film layer 31 can be formed on the first surface 41 by using a plating method such as an electrolytic plating method or a metallization method.
  • the first surface 41 may have a thin film layer (not shown) on the surface. If the first conductive film layer 31 and the metal member 51 are made of the same material, for example, if the first conductive film layer 31 and the metal member 51 are made of copper, then the first conductive film layer 31 and the metal member 51 are made of copper. Good heat transfer can be achieved.
  • the electrode of the electronic element 21 and the other first conductor film layer 31 are connected via a connecting member 33 such as a bonding wire. It is mounted on the substrate 30A by being electrically connected to the conductor film layer 31.
  • a plating layer may be formed on the upper surface of the first conductor film layer 31.
  • the plating layer may be made of a metal having excellent corrosion resistance and connectivity with the connecting member 33, such as nickel, copper, gold, or silver.
  • the plating layer may be formed, for example, by sequentially depositing a nickel plating layer with a thickness of 0.5 to 5 ⁇ m and a gold plating layer with a thickness of 0.1 to 3 ⁇ m. This reduces the possibility that the first conductive film layer 31 will corrode, and also strengthens the adhesion between the first conductive film layer 31 and the electronic element 21 and the bond between the first conductive film layer 31 and the connection member 33. can.
  • the second conductive film layer 32 is located on the second surface 42 of the base 40A.
  • the second conductive film layer 32 may have the same material and configuration as the first conductive film layer 31.
  • the second conductive film layer 32 is used for bonding to the metal plate 22. If the second conductor film layer 32 and the metal member 51 are made of the same material, for example, if the second conductor film layer 32 and the metal member 51 are made of copper, then the metal member 51 is made of the same material as the metal member 51. Good heat transfer can be achieved.
  • the sum of the volume of the first metal member 51A filled in the plurality of first recesses 50A provided on the first surface 41 and the volume of the first conductive film layer 31 is the sum of the volume of the first metal member 51A filled in the plurality of first recesses 50A provided on the first surface 41
  • the volume of the second metal member 51B filled in the plurality of second recesses 50B is significantly different from the sum of the volume of the second conductive film layer 32, the coefficient of thermal expansion of the base 40A and the coefficient of thermal expansion of the metal member 51 Due to the difference, the base body 40A is warped.
  • the sum of the volume of the first metal member 51A filled in the plurality of first recesses 50A provided on the first surface 41 and the volume of the first conductive film layer 31 provided on the second surface 42 is You may set it so that it may be 90 volume % or more and 110 volume % or less of the sum of the volume of the second metal member 51B filled in the plurality of second recesses 50B and the volume of the second conductor film layer 32. Thereby, the amount of warpage of the base body 40A can be reduced.
  • the volume of the first metal member 51A filled in the plurality of first recesses 50A provided on the first surface 41 is The sum may be set to be 90 volume % or more and 110 volume % or less of the sum of the volumes of the second metal members 51B filled in the plurality of second recesses 50B provided on the second surface 42.
  • the base body 40A has a plurality of recesses 50 filled with metal members 51 on the first surface 41 and the second surface 42.
  • the volume of the metal member 51 included in the base body 40A can be increased compared to a base body in which the recess 50 is formed only on one of the first surface 41 and the second surface 42.
  • the thermal conductivity of the substrate 30A can be improved.
  • a recess 50 is formed on the first surface 41 on which the electronic element 21 is mounted, and the width in the front-rear direction decreases as the distance from the first surface 41 increases in a cross section taken along a plane parallel to the vertical direction. may have been done.
  • a recess 50 is formed on the first surface 41 and the second surface 42 on which the electronic element 21 is mounted.
  • the width of the recess 50 in the second direction becomes smaller as the distance from the first surface 41 or the second surface 42 increases in a cross section taken along a plane parallel to the first direction.
  • the diameter of the recess 50 becomes smaller as the distance from the first surface 41 or the second surface 42 increases in a cross section cut along a plane parallel to the first direction.
  • the surface area of the recess 50 can be made larger than, for example, when the recess 50 has a rectangular parallelepiped shape.
  • heat is easily transferred from the metal member 51 on the first surface 41 side to the base body 40A, and from the base body 40A to the metal member 51 on the second surface 42 side.
  • the thermal conductivity of the substrate 30A can be increased.
  • the shape of the recess 50 is a curved shape that is convex from the surface where the recess 50 is formed toward the opposite surface in a cross section cut in the first direction.
  • the first metal member 51A filled in the first recess 50A formed on the first surface 41 side is in contact with the first conductive film layer 31, as shown in FIG. Thereby, the heat conducted from the electronic element 21 to the first conductive film layer 31 is easily conducted to the first metal member 51A.
  • the second metal member 51B filled in the second recess 50B formed on the second surface 42 side is in contact with the second conductor film layer 32, as shown in FIG. Thereby, the heat transferred to the base body 40A is easily conducted to the second conductive film layer 32 via the second metal member 51B. Therefore, the thermal conductivity of the substrate 30A can be improved.
  • the substrate 30A in this embodiment has a laser diode mounted thereon as the electronic element 21, the electronic element mounted on the substrate 30A is not limited to the laser diode.
  • the electronic element mounted on the substrate 30A may be a semiconductor element such as an IC chip or an LSI chip, or a piezoelectric element such as a crystal resonator or a piezoelectric resonator.
  • FIG. 6 is a top view of the substrate 30B in this embodiment.
  • the electronic element mounting portion 41a and the recess 50 are shown with dotted lines, and the recess 50 formed in the second surface 42 is shown with hatching.
  • FIG. 7 is a diagram of the substrate 30B and the electronic element 21 viewed from the third direction (front-back direction). In FIG. 7, the recess 50 is indicated by a dotted line.
  • the substrate 30B includes a base body 40B in place of the base body 40A in the first embodiment.
  • a plurality of recesses 50 filled with metal members 51 are formed on the first surface 41 and the second surface 42, respectively.
  • the opening diameter of the recess 50 becomes smaller as the position where the recess 50 is formed moves outward from the center in the second direction.
  • the opening area of the recess 50 increases from the outside in the second direction toward the electronic element mounting portion 41a.
  • the opening area of the recess 50 provided in the electronic element mounting part 41a or a region close to the electronic element mounting part 41a is the same as that of the recess 50 provided in a region far from the electronic element mounting part 41a. It is larger than the opening area.
  • the base body 40B heat is transferred from the first surface 41 to the inside of the base body 40B in the electronic element mounting part 41a where the recess 50 with a large opening area is formed or in a region close to the electronic element mounting part 41a.
  • This makes it easier to transfer heat, and also makes it easier to transfer heat from the inside of the base 40B to the second surface 42.
  • the thermal conductivity near the electronic element mounting portion 41a is higher than that on the outside. This makes it easier to efficiently transfer the heat conducted from the electronic element 21 to the metal plate 22, making it easier to lower the temperature of the electronic element 21.
  • the base 40B is mounted at the center of the first surface 41 in the third direction.
  • the opening diameter of the recessed portion 50 may become smaller as it goes outward from the portion.
  • FIG. 8 is a top view of the substrate 30C in this embodiment.
  • the recess 50 formed in the second surface 42 is shown hatched.
  • FIG. 9 is a diagram of the substrate 30C and the electronic element 21 viewed from the third direction. In FIG. 9, the recess 50 is indicated by a dotted line.
  • the substrate 30C includes a base body 40C in place of the base body 40A in the first embodiment.
  • the base body 40C has a plurality of recesses 50 filled with metal members 51 on the first surface 41 and the second surface 42.
  • the depth is deeper than the depth of the first recess 50A provided on the first surface.
  • the distance between the first recess 50A provided on the first surface 41 and the second recess 50B provided on the second surface 42 can be reduced, so that the first metal filled in the first recess 50A can be reduced.
  • Heat is easily transferred from the member 51A to the second metal member 51B filled in the second recess 50B. As a result, the heat dissipation of the substrate 30C can be improved.
  • the depth of the first recess 50A refers to the distance from the first surface 41 to the bottom of the first recess 50A
  • the depth of the second recess 50B refers to the distance from the second surface 42 to the bottom of the second recess 50B on the Z axis. Indicates distance in direction.
  • the sum of the volume of the first metal member 51A filled in the plurality of first recesses 50A provided in the first surface 41 and the volume of the first conductive film layer 31 is the second If the volume of the second metal member 51B filled in the plurality of second recesses 50B provided in the surface 42 is significantly different from the sum of the volume of the second conductive film layer 32, the base body 40C will warp. Therefore, in the base body 40C in this embodiment, as shown in FIG. may also be configured to be smaller. Thereby, the volume of the first recess 50A formed on the first surface 41 and the volume of the second recess 50B formed on the second surface 42 can be prevented from differing greatly. Thereby, the amount of warpage of the base body 40C can be reduced.
  • FIG. 10 is a top view of the substrate 30D in this embodiment.
  • 11 is a sectional view taken along the line XI-XI in FIG. 10.
  • FIG. 12 is a sectional view taken along line XII-XII in FIG. 10.
  • the substrate 30D includes a base body 40D in place of the base body 40A in the first embodiment.
  • the recess 60 is a slit extending in a second direction that is perpendicular to the first direction.
  • the recess 60 may be provided in a region that overlaps with the first conductive film layer 31 when the base 40D is seen through the plane.
  • the recess 60 in this embodiment is formed so that the length in the second direction is the same as the length in the second direction of the first conductive film layer 31; It may be shorter than the length of.
  • the recess 60 having an opening on the first surface 41 may be described as a first recess 60A, and the recess 60 having an opening on the second surface 42 as a second recess 60B.
  • the first recess 60A provided in the first surface 41 has a cross-sectional shape cut along a plane perpendicular to the second direction, and as the distance from the first surface 41 increases, the shape changes in the third direction. may have a smaller length.
  • the surface area of the first recess 60A can be increased, for example, compared to a case where the cross section taken along a plane perpendicular to the second direction has a rectangular shape.
  • heat can be easily transferred from the first metal member 51A to the base 40D. Thereby, the thermal conductivity of the substrate 30D can be increased.
  • the second recess 60B provided in the second surface 42 has a cross-sectional shape taken along a plane perpendicular to the second direction such that the length in the third direction decreases as the distance from the second surface 42 increases. You can.
  • the slit can be formed by blasting the first surface 41 and the second surface 42 of the base 40D, as in the above embodiment.
  • the first recess 60A provided on the first surface 41 is provided in an area that does not overlap with the second recess 60B provided on the second surface 42 when viewed through the plane. It may be. Thereby, the first conductive film layer 31 and the second conductive film layer 32 can be prevented from being electrically connected.
  • the recess 60 in this embodiment is a slit extending in the second direction (left-right direction), it is not limited to this.
  • the recess 60 may be a slit extending in any direction as long as it is perpendicular to the up-down direction, for example, it may be a slit extending in the third direction (front-back direction).
  • the shape of the recess 60 is not limited to the above shape as long as the recess 60 is formed on each of the first surface 41 and the second surface 42.
  • the shape of the recess 60 may be, for example, rectangular or triangular in cross section perpendicular to the longitudinal direction.
  • the recesses formed in the first surface 41 and the second surface 42 are slits, but are not limited to this.
  • the cavity structure recess 50 is formed on one of the first surface 41 and the second surface 42, and the slit structure recess 60 is formed on the other surface. good.
  • FIG. 13 is a top view of the substrate 30E in this embodiment.
  • the electronic element mounting portion 41a and the recess 50 are shown with dotted lines, and the recess 50 formed in the second surface 42 is shown with hatching.
  • FIG. 14 is a diagram of the substrate 30E and the electronic element 21 viewed from the third direction (front-back direction). In FIG. 14, the recess 50 is indicated by a dotted line.
  • the substrate 30E includes a base body 40E in place of the base body 40A in the first embodiment.
  • a plurality of recesses 50 filled with metal members 51 are formed on each of the first surface 41 and the second surface 42.
  • the recess 50 has a rectangular parallelepiped shape extending in the first direction.
  • the inside of the recess 50 is filled with a metal member 51 having a higher thermal conductivity than that of the base 40E.
  • the base body 40E has a plurality of recesses 50 filled with metal members 51 on the first surface 41 and the second surface 42.
  • the volume of the metal member 51 included in the base body 40E can be increased compared to a base body in which the recessed portion 50 is formed only on one of the first surface 41 and the second surface 42.
  • the thermal conductivity of the substrate 30E can be improved.
  • the opening areas of the plurality of recesses 50 are the same when the base body 40E is viewed from above, but the opening area of the plurality of recesses 50 is not limited to this. Good too.
  • the depths of the plurality of recesses 50 are the same, but the depth is not limited to this, and the depths of the plurality of recesses 50 may be different from each other.
  • a substrate according to aspect 1 of the present disclosure includes a first surface, a second surface located on the opposite side of the first surface, at least one first recess opening in the first surface, and an opening in the second surface.
  • a base body including at least one second recess having a base body, a first metal member located inside the first recess, and a second metal member located inside the second recess; The thermal conductivity of the member and the thermal conductivity of the second metal member are higher than the thermal conductivity of the base.
  • the base body may have a plurality of the first recesses and a plurality of second recesses.
  • At least one of the first recess and the second recess may have an opening having a circular shape in plan view.
  • the base body has a plurality of the first recesses and a plurality of the second recesses, and the first recess has a plurality of the first recesses.
  • the second recesses may be arranged in a grid pattern on one surface, and the second recesses may be arranged in a grid pattern on the second surface.
  • the substrate according to aspect 5 of the present disclosure when the substrate is viewed through a plane, in at least one direction perpendicular to a first direction orthogonal to the first surface and the second surface, The first recess and the second recess may be arranged alternately.
  • the substrate according to Aspect 6 of the present disclosure may be configured such that, in any of Aspects 1 to 5 above, when the substrate is viewed through the substrate, the first recess does not overlap with the second recess. .
  • the substrate according to aspect 7 of the present disclosure when viewed through from a direction perpendicular to a first direction orthogonal to the first surface and the second surface, the substrate A part of the first recess may overlap with the second recess.
  • the sum of the volumes of the first metal members filled inside the first recess is The content may be 90% by volume or more and 110% by volume or less of the sum of the volumes of the filled second metal members.
  • a substrate according to aspect 9 of the present disclosure in any one of aspects 1 to 7 above, includes a first conductive film layer located on the first surface and a second conductive film layer located on the second surface.
  • the sum of the volume of the first metal member filled in the first recess and the volume of the first conductor film layer is the sum of the volume of the second metal member filled in the second recess.
  • a configuration may be adopted in which the sum of the volume of the member and the volume of the second conductor film layer is 90 volume % or more and 110 volume % or less.
  • the first recess in at least one cross section cut in a first direction perpendicular to the first surface and the second surface, is The width of the second recess in the direction parallel to the first surface becomes smaller as the distance from the first surface increases, and the width of the second recess in the direction parallel to the first surface becomes smaller as the distance from the first surface increases. It may become smaller as the distance from
  • the shapes of the first recess and the second recess are such that, in at least one cross section cut in the first direction, the shapes of the first surface and the second recess are It may have a curved shape toward the opposite surface from the surface where the first recess or the second recess is provided.
  • the base body includes an electronic element mounting part on the first surface, and the opening area of the second recess is The structure may be smaller than the opening area of one recess.
  • the base body includes an electronic element mounting part on the first surface, and the depth of the second recess is equal to the depth of the second recess.
  • the structure may be deeper than the depth of one recess.
  • At least one of the first recess and the second recess has the first surface and the second surface facing each other.
  • the slit may extend in a second direction perpendicular to the first direction.
  • the first recess may not overlap with the second recess when the substrate is seen through a plane.
  • An electronic device includes an electronic element mounted on the substrate according to any one of aspects 1 to 15 above.
  • the electronic device according to aspect 16 above is housed in a case.
  • the electronic module according to aspect 17 above is mounted on a module board or a casing.
  • Module device 2 Housing 10 Electronic module 11 Case 20 Electronic device 21 Electronic element 30A, 30B, 30C, 30D, 30E Substrate 31 First conductor film layer 32 Second conductor film layer 40A, 40B, 40C, 40D, 40E Base 41a Electronic element mounting portion 50, 60 Recess 50A, 60A First recess 50B, 60B Second recess 51 Metal member 51A First metal member 51B Second metal member

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)
PCT/JP2023/024868 2022-07-05 2023-07-05 基板、電子装置、電子モジュールおよびモジュール装置 Ceased WO2024010022A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US18/879,110 US20250392096A1 (en) 2022-07-05 2023-07-05 Substrate, electronic device, electronic module, and module device
JP2024532602A JPWO2024010022A1 (https=) 2022-07-05 2023-07-05
DE112023002939.3T DE112023002939T5 (de) 2022-07-05 2023-07-05 Substrat, elektronische vorrichtung, elektronisches modul und modul-vorrichtung
CN202380049764.7A CN119487977A (zh) 2022-07-05 2023-07-05 基板、电子装置、电子模块及模块装置

Applications Claiming Priority (2)

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JP2022-108631 2022-07-05
JP2022108631 2022-07-05

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JP (1) JPWO2024010022A1 (https=)
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WO (1) WO2024010022A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736468U (ja) * 1993-12-06 1995-07-04 株式会社東海理化電機製作所 電子部品の放熱構造
JPH10335571A (ja) * 1997-05-30 1998-12-18 T I F:Kk メモリモジュールおよびメモリシステム
US20070284711A1 (en) * 2006-06-09 2007-12-13 Lee Tien Yu T Methods and apparatus for thermal management in a multi-layer embedded chip structure
JP2022015483A (ja) * 2020-07-09 2022-01-21 Tdk株式会社 回路基板及びこれを用いた回路モジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736468U (ja) * 1993-12-06 1995-07-04 株式会社東海理化電機製作所 電子部品の放熱構造
JPH10335571A (ja) * 1997-05-30 1998-12-18 T I F:Kk メモリモジュールおよびメモリシステム
US20070284711A1 (en) * 2006-06-09 2007-12-13 Lee Tien Yu T Methods and apparatus for thermal management in a multi-layer embedded chip structure
JP2022015483A (ja) * 2020-07-09 2022-01-21 Tdk株式会社 回路基板及びこれを用いた回路モジュール

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DE112023002939T5 (de) 2025-05-08
JPWO2024010022A1 (https=) 2024-01-11
US20250392096A1 (en) 2025-12-25

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