WO2024002169A1 - 固态开关设备和用于该固态开关设备的操作方法 - Google Patents

固态开关设备和用于该固态开关设备的操作方法 Download PDF

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Publication number
WO2024002169A1
WO2024002169A1 PCT/CN2023/103238 CN2023103238W WO2024002169A1 WO 2024002169 A1 WO2024002169 A1 WO 2024002169A1 CN 2023103238 W CN2023103238 W CN 2023103238W WO 2024002169 A1 WO2024002169 A1 WO 2024002169A1
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WIPO (PCT)
Prior art keywords
phase
voltage
power semiconductor
semiconductor switch
arm circuit
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Application number
PCT/CN2023/103238
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English (en)
French (fr)
Inventor
陈晓航
白万龙
吴作人
宋杨峰
凌清
陈加敏
Original Assignee
施耐德电器工业公司
陈晓航
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Application filed by 施耐德电器工业公司, 陈晓航 filed Critical 施耐德电器工业公司
Priority to EP23809071.6A priority Critical patent/EP4333300A1/en
Publication of WO2024002169A1 publication Critical patent/WO2024002169A1/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

Definitions

  • the present disclosure relates to a solid state switching device and an operating method for the solid state switching device.
  • the solid-state switch When the AC power grid supplies power to the load through a solid-state switch, if the solid-state switch is at a higher voltage value when activated, a larger inrush current may occur, especially in the case of capacitive loads.
  • the fast response time is usually less than 5 microseconds.
  • Such a fast short-circuit protection response can easily cause the inrush current generated when the solid-state switch is activated to cause the short-circuit protection to falsely activate. Therefore, it is particularly important to suppress the inrush current when solid-state switches are started.
  • the present disclosure provides a solid-state switching device that can realize voltage zero-crossing startup, so that the current flowing through the load gradually increases from zero without generating a large inrush current.
  • the solid-state switching device includes: phase bridge arm circuit, phase voltage sampling circuit and control circuit.
  • the phase arm circuit includes first and second power semiconductor switches, each of the first and second power semiconductor switches includes a first terminal, a second terminal and a control terminal and each includes a body diode, and the first and second power semiconductor switches each include a body diode.
  • the second terminal is connected in series with one phase of the single-phase power supply.
  • the phase voltage sampling circuit obtains the sampling value of the phase voltage of the phase bridge arm circuit.
  • the control circuit determines the direction of the phase voltage based on the sampled value of the phase voltage, turns on a power semiconductor switch in the phase bridge arm circuit whose body diode direction is the same as the direction of the phase voltage, and at the immediate zero crossing of the phase voltage The other power semiconductor switch in the phase arm circuit is turned on for the next half cycle.
  • control circuit determines that the direction of the phase voltage is the positive direction by determining that the average value of the latest predetermined number of sample values of the phase voltage is greater than a predetermined positive threshold, or by determining the average value of the latest predetermined number of sample values of the phase voltage. If the voltage is less than the predetermined negative threshold, the direction of the phase voltage is determined to be the negative direction.
  • the control circuit determines that the phase voltage zero-crosses by determining that the average of the latest predetermined number of sampling values of the phase voltage is less than a predetermined positive threshold; or after determining that the direction of the phase voltage is After the negative direction, the control circuit determines that the phase voltage zero-crosses by determining that an average of the latest predetermined number of sampled values of the phase voltage is greater than a predetermined negative threshold.
  • the solid-state switching device includes a first phase bridge arm circuit, a second phase bridge arm circuit, a third phase bridge arm circuit, a phase voltage sampling circuit and a control circuit.
  • the first phase leg circuit includes first and second power semiconductor switches, each of the first and second power semiconductor switches includes a first terminal, a second terminal and a control terminal and each includes a body diode, the first and second power semiconductor switches The second terminal is connected and connected in series to the first phase of the three-phase power supply.
  • the second phase bridge arm circuit includes third and fourth power semiconductor switches, each of the third and fourth power semiconductor switches includes a first terminal, a second terminal and a control terminal and each includes a body diode.
  • the third and fourth power semiconductor switches The second end is connected and connected in series to the second phase of the three-phase power supply.
  • the third phase bridge arm circuit includes fifth and sixth power semiconductor switches.
  • the fifth and sixth power semiconductor switches each include a first terminal, a second terminal and a control terminal and each includes a body diode.
  • the fifth and sixth power semiconductor switches The second end is connected and connected in series to the third phase of the three-phase power supply.
  • the phase voltage sampling circuit obtains the sampling value of the first phase voltage of the first phase bridge arm circuit, the sampling value of the second phase voltage of the second phase bridge arm circuit, and the sampling value of the third phase voltage of the third phase bridge arm circuit. .
  • the control circuit performs the following operations: determines the direction of the line voltage between the first phase bridge arm circuit and the second phase bridge arm circuit based on the sampling value of the first phase voltage and the sampling value of the second phase voltage, and conducts the first phase voltage.
  • a power semiconductor switch in a three-phase leg circuit whose body diode is oriented in the same direction as the voltage; and half a cycle after the immediate zero-crossing of the voltage across the third-phase leg circuit Within the wave, another power semiconductor switch in the third phase bridge arm circuit is turned on.
  • the first phase bridge arm circuit, the second phase bridge arm circuit and the third phase bridge arm circuit are star connected.
  • each of the first to sixth power semiconductor switches is a metal oxide semiconductor field effect transistor, and the first terminal, the second terminal and the control terminal are respectively a drain, a source and a gate; or the first to sixth power semiconductor switches are metal oxide semiconductor field effect transistors.
  • Each of the sixth power semiconductor switches is an insulated gate bipolar transistor, with a first terminal, a second terminal and a control terminal being a collector, an emitter and a base respectively.
  • the control circuit derives the latest predetermined number of sample values of the line voltage from the latest predetermined number of sample values of the first phase voltage and the latest predetermined number of sample values of the second phase voltage, by determining the latest predetermined number of sample values of the line voltage.
  • the direction of the line voltage is determined to be the positive direction by determining that the average value of a number of sampled values is greater than a predetermined positive threshold, or by determining that the average value of the latest predetermined number of sampled values of the line voltage is less than a predetermined negative threshold to determine the direction of the line voltage. negative direction.
  • the control circuit derives the two third-phase bridge arm circuits from the latest predetermined number of sample values of the first phase voltage, the latest predetermined number of sample values of the second phase voltage, and the latest predetermined number of sample values of the third phase voltage.
  • the direction of the voltage at both ends of the third phase bridge arm circuit is determined by determining that the average of the latest predetermined number of sample values of the voltage at both ends of the third phase bridge arm circuit is greater than a predetermined positive threshold.
  • the positive direction, or the direction of the voltage across the third phase arm circuit is determined to be the negative direction by determining that the average value of the latest predetermined number of sample values of the voltage across the third phase arm circuit is less than a predetermined negative threshold.
  • the control circuit determines that the line voltage is zero-crossing by determining that the average of the latest predetermined number of sampling values of the line voltage is less than a predetermined positive threshold; or after determining that the direction of the line voltage is After the negative direction, the control circuit determines that the line voltage zero-crosses by determining that the average of the most recent predetermined number of sampled values of the line voltage is greater than a predetermined negative threshold.
  • the control circuit determines that the average value of the latest predetermined number of sampling values of the voltage at both ends of the third phase bridge arm circuit is less than the predetermined positive threshold. Determine that the voltage at both ends of the third-phase bridge arm circuit crosses zero; or after determining that the direction of the voltage at both ends of the third-phase bridge arm circuit is a negative direction, the control circuit determines the latest predetermined number of voltages at both ends of the third-phase bridge arm circuit. The average value of the sampled values is greater than the predetermined negative threshold to determine the voltage zero crossing across the third phase bridge arm circuit.
  • the solid state switching device includes a phase arm circuit, the phase arm circuit includes First and second power semiconductor switches, each of the first and second power semiconductor switches includes a first terminal, a second terminal and a control terminal and each includes a body diode, and the second terminals of the first and second power semiconductor switches are connected and Connected in series with one phase of a single-phase power supply.
  • the operation method includes: obtaining the sampling value of the phase voltage of the phase arm circuit; determining the direction of the phase voltage according to the sampling value of the phase voltage, and turning on the body diode in the phase arm circuit in the same direction as the direction of the phase voltage. a power semiconductor switch; within half a cycle immediately after the zero-crossing of the phase voltage, another power semiconductor switch in the phase bridge arm circuit is turned on.
  • the solid-state switching device includes a star-connected first-phase bridge arm circuit, a second-phase bridge arm circuit, and a third-phase bridge arm circuit.
  • the first phase leg circuit includes first and second power semiconductor switches, each of the first and second power semiconductor switches includes a first terminal, a second terminal, and a control terminal and each includes a body diode, and the first and second power semiconductor switches The second terminal of the switch is connected in series with the first phase of the three-phase power supply.
  • the second phase arm circuit includes third and fourth power semiconductor switches, each of the third and fourth power semiconductor switches includes a first terminal, a second terminal, and a control terminal and each includes a body diode, and the third and fourth power semiconductor switches The second terminal of the switch is connected in series with the second phase of the three-phase power supply.
  • the third phase bridge arm circuit includes fifth and sixth power semiconductor switches, the fifth and sixth power semiconductor switches each include a first terminal, a second terminal and a control terminal and each includes a body diode, and the fifth and sixth power semiconductor switches The second terminal of the switch is connected in series with the third phase of the three-phase power supply.
  • the operation method includes: obtaining the sampling value of the first phase voltage of the first phase bridge arm circuit, the sampling value of the second phase voltage of the second phase bridge arm circuit, and the sampling value of the third phase voltage of the third phase bridge arm circuit. ; Determine the direction of the line voltage between the first phase bridge arm circuit and the second phase bridge arm circuit based on the sampling value of the first phase voltage and the sampling value of the second phase voltage, and conduct other components in the first phase bridge arm circuit.
  • a power semiconductor switch having a body diode in the same direction as the line voltage and a power semiconductor switch in the second phase leg circuit having a body diode in the same direction as the line voltage.
  • the other power semiconductor switch in the first phase bridge arm circuit and the other power semiconductor switch in the second phase bridge arm circuit are turned on, and the line voltage is switched on.
  • the direction of the voltage at both ends of the third-phase bridge arm circuit is determined based on the sampled value of the first-phase voltage, the sampled value of the second-phase voltage, and the sampled value of the third-phase voltage, and the third phase is turned on.
  • a power semiconductor switch whose body diode in the phase arm circuit is oriented in the same direction as the voltage; and conducting the third phase arm circuit within half a cycle immediately after the zero-crossing of the voltage at both ends of the third phase arm circuit.
  • Another of the three-phase bridge arm circuit Power semiconductor switches.
  • Solid-state switching devices and operating methods for these solid-state switching devices can realize voltage zero-crossing startup, gradually increase the current flowing through the load from zero, suppress the generation of inrush current, and avoid erroneous short-circuit protection. start up.
  • FIG. 1 is a schematic structure showing a solid-state switching device for a single-phase power supply according to an embodiment of the present disclosure
  • FIG. 2 is an example showing the operation of the control circuit in FIG. 1;
  • FIG. 3 is a schematic structure showing a solid-state switching device for a three-phase power supply according to an embodiment of the present disclosure
  • FIG. 4 is an example showing the operation of the control circuit in FIG. 3;
  • FIG. 5 is a schematic flow chart illustrating a method of operating a solid-state switching device for a single-phase power supply according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic flow chart illustrating an operating method of a solid-state switching device for a three-phase power supply according to an embodiment of the present disclosure.
  • the solid-state switching device can realize voltage zero-crossing startup and suppress inrush current, thereby avoiding false startup of short-circuit protection.
  • FIG. 1 is a schematic structure showing a solid-state switching device for a single-phase power supply according to an embodiment of the present disclosure.
  • a solid state switching device 100 is connected between a single phase power supply and a load.
  • the single-phase power supply supplies power to the load via solid state switching device 100 .
  • the solid-state switching device 100 includes a phase arm circuit 110, a phase voltage sampling circuit 120, and a control circuit 130.
  • the phase arm circuit 110 includes a first power semiconductor switch G1 and a second power semiconductor switch G2.
  • the first power semiconductor switch G1 includes a first terminal, a second terminal and a control terminal and includes a body diode D1.
  • the second power semiconductor switch G2 includes a first terminal, a second terminal and a control terminal and includes a body diode D2.
  • the second terminals of the first and second power semiconductor switches G1, G2 are connected in series with the phases of the single-phase power supply.
  • Each of the first power semiconductor switch G1 and the second power semiconductor switch G2 may be implemented using a metal oxide semiconductor field effect transistor MOSFET or an insulated gate bipolar transistor IGBT.
  • MOSFET metal oxide semiconductor field effect transistor
  • the first terminal of the first or second power semiconductor switch G1, G2 is the drain
  • the second terminal is the source
  • the control terminal is the gate.
  • the first terminals of the first or second power semiconductor switch G1, G2 are the collector, emitter and base.
  • the direction of the body diode in a MOSFET or IGBT is opposite to the direction of flow when the MOSFET or IGBT is turned on.
  • the direction of the body diode in an N-type MOSFET is from source to drain, and the direction of the body diode in a P-type MOSFET is from drain to source.
  • the first and second power semiconductor switches G1 and G2 are shown as N-type MOSFETs in FIG. 1 .
  • the phase voltage sampling circuit 120 is used to obtain the sampling value of the phase voltage V applied to the phase arm circuit 110, for example, by sampling the phase voltage V according to a certain sampling frequency (eg, 48 points/cycle).
  • Phase voltage sampling circuit 120 may be implemented using voltage transformers, voltage dividing resistors, analog-to-digital converters, and digital-to-analog converters, or combinations thereof, or using other known voltage sampling techniques.
  • the control circuit 130 is connected with the phase voltage sampling circuit 120 to receive the sampled value of the phase voltage V from the phase voltage sampling circuit 120 .
  • the control circuit 130 is also connected to the control terminals of the first and second power semiconductor switches G1 and G2 to turn them on by applying a driving voltage to their control terminals.
  • Control circuit 130 may It can be implemented using, for example, a microcontroller unit (MCU) or other hardware or software combination.
  • MCU microcontroller unit
  • the control circuit 130 determines the direction of the phase voltage V according to the sampled value of the phase voltage V, and turns on the body diodes of the first and second power semiconductor switches G1 and G2 of the phase bridge arm circuit 110 A power semiconductor switch with the same direction as the phase voltage V. Then, the other of the first and second power semiconductor switches G1 , G2 is switched on within a half cycle immediately following the zero crossing of the phase voltage V.
  • the operation of the control circuit 130 will be described below with reference to FIGS. 1 and 2 .
  • FIG. 2 is an example showing the operation of the control circuit 130 in FIG. 1 .
  • the curve 200 is the waveform of the phase voltage V fitted by the sampled value of the phase voltage V obtained by the phase voltage sampling circuit 120 .
  • the single-phase power supply is turned on at time 0, and the phase voltage V is applied to the phase arm circuit 110.
  • the phase voltage sampling circuit 120 acquires the sampling value of the phase voltage V.
  • p 1 to p 3 shown in Figure 2 respectively refer to the sampled values of the phase voltage V from time t 1 to t 3
  • p i-2 to p i respectively refer to the phase voltage V from time t i-2 to t i .
  • the sampled value of p j refers to the sampled value of phase voltage V at time t j .
  • p 1 to p 3 are three consecutive sample values
  • p i-2 to p i are three consecutive sample values.
  • control circuit 130 After the single-phase power supply is turned on, the control circuit 130 first determines the direction of the phase voltage V, and turns on a power semiconductor switch in the first phase bridge arm circuit 110 whose body diode direction is the same as the direction of the phase voltage V.
  • control circuit 130 may determine that the direction of the phase voltage V is the positive direction, that is, located in the cycle, by determining that the average value of the latest predetermined number (for example, 3) sampling values of the phase voltage V is greater than the predetermined positive threshold T. of the positive half cycle, or by determining that the average value of these sample values is less than the predetermined negative threshold -T to determine the direction of the phase voltage V as the negative direction, that is, located in the negative half cycle of the cycle. If the average value of the latest predetermined number of sampled values of the phase voltage V is neither greater than the predetermined positive threshold T nor less than the predetermined negative threshold -T, wait for the next sampled value of the phase voltage V to be generated before repeating this step.
  • the average value of the latest predetermined number for example, 3
  • the control circuit 130 determines that the phase voltage V is in the positive half cycle of the cycle at this time, that is, the direction is the positive direction (as shown by the dotted arrow in Figure 1 ) . Since the direction of the body diode D2 of the second power semiconductor switch G2 is the same as the direction of the phase voltage V at this time, the control circuit 130 switches to the second The control terminal of the power semiconductor switch G2 applies a driving voltage to turn it on.
  • Time t j is the immediate zero-crossing moment of phase voltage V
  • t q is the next zero-crossing moment after t j .
  • the direction of the phase voltage V is positive.
  • the second power semiconductor switch G2 is turned on, the first power semiconductor switch G1 is still turned off and the direction of the body diode D1 is also consistent with the direction of the phase voltage V.
  • the phase leg circuit 110 remains open.
  • phase voltage V crosses zero and the direction becomes negative.
  • the direction of the body diode D1 is the same as the direction of the phase voltage V at this time. Then the drain, source and body diode D1 of the second power semiconductor switch G2 form a The conductive path, the phase arm circuit 110 is closed, and the current gradually increases from zero.
  • the control circuit 130 applies a driving voltage to the control terminal of the first power semiconductor switch G1 to turn it on. Thereafter, the drain electrode and the source electrode of the first power semiconductor switch G1 and the source electrode and the drain electrode of the second power semiconductor switch G2 form a conductive path.
  • the control circuit 130 needs to determine the zero-crossing moment t j of the phase voltage V. It is easy to understand that since the phase voltage sampling circuit 120 does not necessarily obtain the sampled value of the phase voltage at the zero-crossing moment tj , the control circuit 130 is designed to approximately identify the moments within a certain time range before and after the zero-crossing moment tj as the zero-crossing moment. , which will not affect the suppression effect of inrush current.
  • the control circuit 130 determines that the phase voltage V zero-crosses by determining that the average value of the latest predetermined number of sample values of the phase voltage V is less than the predetermined positive threshold T.
  • the control circuit 130 determines that the phase voltage V zero-crosses by determining that the average value of the latest predetermined number of sample values of the phase voltage V is greater than the predetermined negative threshold -T.
  • the predetermined positive threshold T and the predetermined negative threshold -T are chosen such that the zero-crossing moment determined in this way is close to the exact zero-crossing moment.
  • the control circuit 130 receives the new sample value p i of the phase voltage V at time ti , and then obtains the latest three sample values p i-2 , p i-1 and p of the phase voltage V. i .
  • the control circuit 130 determines the time ti as the zero-crossing time.
  • time t i may not be equal to the exact zero-crossing time t j , it is close to the exact zero-crossing time t j .
  • the control circuit 130 will turn on the first power semiconductor switch G1 within half a cycle after time ti , that is, turn on G1 between time ti and time tp .
  • control circuit 130 can also be designed to determine whether the direction of the phase voltage V becomes negative after determining the time ti as the zero-crossing moment, and after determining that the phase voltage V
  • the first power semiconductor switch G1 is turned on only after the direction of V changes to the negative direction. For example, after identifying time t i as the zero-crossing time, the control circuit 130 determines whether the direction of the phase voltage V becomes negative by calculating whether the average of the latest three consecutive sampling values is less than a predetermined negative threshold -T. Once it is determined at time tk that the phase voltage V enters the negative direction, the first power semiconductor switch G1 is turned on.
  • control circuit 130 may also be designed to turn on the first power semiconductor switch G1 only after determining the time ti as 1/4 cycle after the zero-crossing time. That is, G1 is turned on when the phase voltage V approaches the peak value in the negative direction. As shown in the figure, G1 is turned on at time t m .
  • the above preferred implementation further ensures that G1 is not turned on until the phase voltage truly crosses zero, and other implementations that can achieve this goal are also possible.
  • the first power semiconductor switch G1 is turned on between time t i and time t k , since the phase voltage V during this period is already close to zero, the current when the phase arm circuit 110 is closed is also close to zero. In order to suppress the inrush current, It is enough to say.
  • the average value of multiple consecutive sampling values of the phase voltage is selected to determine the direction and zero crossing of the phase voltage in order to avoid erroneous judgments caused by erroneous sampling values due to interference.
  • the present disclosure is not limited to the method for determining the voltage direction and zero crossing.
  • the median value of multiple sampling values, the sum of multiple sampling values, etc. can also be used as a reference standard for judgment.
  • the number of sampling values can also be adaptively changed according to the sampling frequency and sampling accuracy of the phase voltage sampling circuit.
  • the solid-state switching device 100 for a single-phase power supply realizes voltage zero-crossing startup, so that the current flowing through the load gradually rises from zero, without generating a large inrush current, and thus without Causes false start of short circuit protection.
  • FIG. 3 is a schematic structural diagram showing a solid-state switching device for a three-phase power supply according to an embodiment of the present disclosure.
  • a solid-state switching device 300 for a three-phase power supply is connected between a three-phase power supply and a load.
  • the solid-state switching device 300 includes a first phase arm circuit 310 , a second phase arm circuit 320 and a second phase arm circuit 330 , a phase voltage sampling circuit 340 and a control circuit 350 .
  • the first phase bridge arm circuit 310, the second phase bridge arm circuit 320 and the third phase bridge arm circuit 330 are connected in a star shape.
  • the first phase arm circuit 310 includes a first power semiconductor switch G1 and a second power semiconductor switch G2.
  • the first power semiconductor switch G1 includes a first terminal, a second terminal and a control terminal and includes a body diode D1.
  • the second power semiconductor switch G2 includes a first terminal, a second terminal and a control terminal and includes a body diode D2.
  • the second terminals of the first and second power semiconductor switches G1 and G2 are connected in series to the three-phase power supply. In phase A of the electrical power supply.
  • the second phase arm circuit 310 includes a third power semiconductor switch G3 and a fourth power semiconductor switch G4.
  • the third power semiconductor switch G3 includes a first terminal, a second terminal and a control terminal and includes a body diode D3.
  • the fourth power semiconductor switch G4 includes a first terminal, a second terminal and a control terminal and includes a body diode D4.
  • the second terminals of the third and fourth power semiconductor switches G3 and G4 are connected in series to phase B of the three-phase power supply.
  • the third phase arm circuit 330 includes a fifth power semiconductor switch G5 and a sixth power semiconductor switch G6.
  • the third power semiconductor switch G5 includes a first terminal, a second terminal and a control terminal and includes a body diode D5.
  • the fourth power semiconductor switch G6 includes a first terminal, a second terminal and a control terminal and includes a body diode D6.
  • the second terminals of the third and fourth power semiconductor switches G5 and G6 are connected in series to phase C of the three-phase power supply.
  • each of the third to sixth power semiconductor switches G3 to G6 can also be implemented using MOSFET or IGBT, and the description will not be repeated here.
  • the first to sixth power semiconductor switches G1 to G6 are also shown as N-type MOSFETs in FIG. 3 .
  • the phase voltage sampling circuit 340 is used to obtain the sampling value of the first phase voltage VA applied to the first phase arm circuit 310, the sampling value of the second phase voltage VB applied to the second phase arm circuit 320, and the sampling value of the second phase voltage VB applied to the second phase arm circuit 320.
  • the phase voltage sampling circuit 340 can be implemented similarly to the phase voltage sampling circuit 120, and the description will not be repeated here.
  • control circuit 350 selects an appropriate timing according to the change of each phase voltage to turn on the first to sixth power semiconductor switches G1 to G6 respectively.
  • control circuit 350 first determines the line voltage V AB between the first phase bridge arm circuit 310 and the second phase bridge arm circuit 320 based on the sampling value of the first phase voltage V A and the sampling value of the second phase voltage V B. direction, and conducts a power semiconductor switch (G1 or G2) whose body diode in the first phase arm circuit 310 has the same direction as the line voltage V AB and its body in the second phase arm circuit 320 A power semiconductor switch (G3 or G4) with a diode oriented in the same direction as the line voltage V AB .
  • the control circuit 350 turns on the other power semiconductor switch (G2 or G1) in the first phase bridge arm circuit 310 and the second phase bridge arm circuit 320. Another power semiconductor switch (G4 or G3). Moreover, after the immediate zero-crossing of line voltage V AB , the control circuit 350 controls the sampling value of the first phase voltage V A according to the sampling value of the second phase voltage V B. value and the sampled value of the third phase voltage V C determine the direction of the voltage across the third phase bridge arm circuit 330 , and conducts the direction of its body diode in the third phase bridge arm circuit 330 with the third phase bridge arm circuit 330 A power semiconductor switch (G5 or G6) with the same voltage direction at both ends.
  • FIG. 4 is an example showing the operation of the control circuit 350 in FIG. 3 .
  • curves 410, 420, and 430 are respectively obtained by the sampling value of the first phase voltage V A , the sampling value of the second phase voltage V B , and the sampling value of the third phase voltage V C obtained by the phase voltage sampling circuit 340.
  • Curve 440 is the waveform of line voltage V AB between phase A and phase B derived from curve 410 and curve 420.
  • Curve 450 is the waveform of voltage V LR across phase C derived from curve 410, curve 420 and curve 430.
  • reference symbols L and R respectively represent the two ends of the third phase bridge arm circuit 330.
  • the three-phase power supply is turned on at time 0, and the first to third phase voltages VA , VB , and VC are applied to the phase arm circuits 310, 320, and 330 respectively.
  • the phase voltage sampling circuit 340 obtains the sampling value of each phase voltage.
  • a1 to a3 shown in FIG. 4 respectively refer to the sampled values of the phase voltage V A at time t1 to t3
  • b1 to b3 respectively refer to the sampled values of the phase voltage V B at time t1 to t3.
  • the sampling values u1 to u3 of the line voltage V AB between the two phases AB can be derived, respectively, corresponding to the time t1 to t3.
  • a1 to a3 are three consecutive sampling values
  • b1 to b3 are three consecutive sampling values.
  • the control circuit 350 first determines the relationship between the first phase bridge arm circuit 310 and the second phase bridge arm circuit 320 based on the sampling value of the first phase voltage V A and the sampling value of the second phase voltage V B. The direction of the line voltage V AB .
  • the control circuit 350 may derive the latest predetermined number of sampling values from the latest predetermined number (for example, 3) of the first phase voltage V A and the latest predetermined number of sampling values of the second phase voltage V B. Sampled value of line voltage V AB . Then, if the average value of the latest predetermined number of sampling values of line voltage V AB is greater than the predetermined positive threshold T, the direction of line voltage V AB is determined to be the positive direction, that is, from phase A to phase B. If the average value of the latest predetermined number of sampling values of line voltage V AB is less than the predetermined negative threshold, the direction of line voltage V AB is determined to be the negative direction, that is, from phase B to phase A. If the latest If the predetermined number of sampled values of line voltage V AB are neither greater than the positive threshold T nor less than the negative threshold -T, wait for the next sample value of line voltage V AB to be generated before repeating this step.
  • the latest predetermined number of sampled values of line voltage V AB are neither greater than the
  • the control circuit 350 receives the latest sampling value a 3 of the phase voltage V A and the latest sampling value b 3 of the phase voltage V B at time t3.
  • the control circuit 350 takes the latest three sampling values a 1 , a 2 , a 3 of the first phase voltage V A and the latest three sampling values b 1 , b 2 , and b 3 of the second phase voltage V B , and derives the latest 3
  • the control circuit 350 determines the direction of the line voltage V AB to be the negative direction, that is, from phase B to phase A. Since the direction of the body diode D1 of the first power semiconductor switch G1 in the first phase arm circuit 310 and the body diode D4 of the fourth power semiconductor switch G4 in the second phase arm circuit 320 is the same as that from phase B to phase A, In the same direction, the control circuit 350 turns on G1 and G4 by applying a driving voltage to the control terminals of the first and fourth power semiconductor switches G1 and G4.
  • Time t n is the immediate zero-crossing time of line voltage V AB
  • time t y is the next zero-crossing time of line voltage V AB .
  • the line voltage V AB crosses zero and the direction changes to the positive direction, that is, from phase A to phase B.
  • the directions of the body diodes D2 and D3 are the same as the direction from phase A to phase B, in the first phase bridge arm circuit 310, the source and drain of the first power semiconductor switch G1 and the second power semiconductor
  • the body diode D2 of the switch G2 forms a conductive path
  • the body diode D3 of the third power semiconductor switch G3 and the source and drain of the fourth power semiconductor switch G4 form a conductive path.
  • the first and second phase arm circuits 310 and 320 are closed and the current gradually increases from zero.
  • the second power semiconductor switch G2 in the first phase bridge arm circuit 310 and the second power semiconductor switch G2 in the second phase bridge arm circuit are turned on.
  • a conductive path is formed by the first and second power semiconductor switches G1 and G2
  • a conductive path is formed by the third and fourth power semiconductor switches G3 and G2.
  • G4 forms a conductive path.
  • the control circuit 350 can control the circuit 350 according to the sampled value of the first phase voltage VA , the second phase voltage V
  • the sampled value of B and the sampled value of the third phase voltage V C determine the voltage across the third phase bridge arm circuit 330 direction of the voltage V LR , and turns on a power semiconductor switch whose diode in the third phase bridge arm circuit 330 has the same direction as the voltage V LR .
  • the control circuit 350 controls the latest three sampling values of the first phase voltage V A , a s-1 , a s , a s+1 , and the latest sample value of the second phase voltage V B.
  • the three sampling values b s-1 , b s , b s+1 and the latest three sampling values c s-1 , c s , c s+1 of the third phase voltage V C are used to derive the third phase bridge arm circuit 330.
  • the control circuit 350 determines that the direction of the voltage V LR across the third phase bridge arm circuit 330 is the negative direction, that is, from R end to L end.
  • the direction of the body diode D5 is the same as the direction of the voltage V LR , and the control circuit 350 turns on G5 by applying a driving voltage to the control terminal of the fifth power semiconductor switch G5.
  • Time t x is the immediate zero-crossing moment of the voltage V LR across the third phase bridge arm circuit 330
  • time t z is its next zero-crossing moment.
  • the voltage V LR across the third phase bridge arm circuit 330 crosses zero, and the direction becomes the positive direction, that is, from the L terminal to the R terminal.
  • the drain and source of the fifth power semiconductor switch G5 and the body diode D6 form a conductive path.
  • the third phase arm circuit 330 is closed and the current gradually increases from zero.
  • a conductive path is formed in the third phase bridge arm circuit 330 by the drain and source of the fifth power semiconductor switch G5 and the source and drain of the sixth power semiconductor switch G6.
  • the control circuit 350 needs to determine the zero-crossing moment of the line voltage V AB between phase A and phase B and the zero-crossing moment of the voltage across the third phase bridge arm circuit 330 . It is easy to understand that since the phase voltage sampling circuit 340 may not necessarily obtain the sampling values of each phase voltage at the precise zero-crossing moments tn and tx , the control circuit 350 is designed to set the precise zero-crossing moments tn and tx to a certain value before and after The time within the range is approximately determined as the zero-crossing time, which will not affect the suppression effect of the inrush current.
  • control circuit 350 determines that the average value of the latest predetermined number of sample values of the line voltage V AB is less than the predetermined positive threshold T to determine that the line voltage V AB has exceeded zero.
  • control circuit 350 determines that line voltage V AB zero-crosses by determining that the average of the latest predetermined number of sample values of line voltage V AB is less than a predetermined negative threshold -T.
  • control circuit 350 has determined at time t 3 that the direction of line voltage V AB is negative. direction and turns on the first and fourth power semiconductor switches G1 and G4. Thereafter, the control circuit 350 derives a new sampled value of the line voltage VAB each time it receives new sampled values of the first and second phase voltages VA and VB . Then, it is determined that the line voltage V AB zero-crosses by determining that the latest predetermined number of sample values of the line voltage V AB at this time are less than the predetermined threshold T.
  • the positive threshold T is predetermined to determine the zero crossing of the voltage across the third phase leg circuit 330 .
  • the direction of the voltage V LR across the third phase bridge arm circuit 330 is a negative direction
  • Threshold -T to determine the zero crossing of the voltage across the third phase bridge arm circuit.
  • the control circuit 350 has determined at time t s+1 that the direction of the voltage V LR across the third phase bridge arm circuit 330 is the negative direction, that is, from the R end to the L end, and conducts the fifth power Semiconductor switch G5. Thereafter, the control circuit 350 derives a new sample value of the voltage V LR every time it receives new sample values of the first, second and third phase voltages VA , V B and VC . Then it is determined that the voltage V LR crosses zero by determining that the latest predetermined number of sample values of the voltage V LR at this time are greater than the predetermined negative threshold -T.
  • the control circuit 350 may be designed to determine whether the line voltage V AB is reversed after determining that the line voltage V AB crosses zero, and only after determining that the line voltage V AB is reversed.
  • the second and third power semiconductor switches G2 and G3 are turned on.
  • the control circuit 350 may also be designed to turn on the second and third power semiconductor switches G2 and G3 only at 1/4 cycle after the line voltage V AB is determined to cross zero. These preferred embodiments further ensure that G2 and G3 are turned on after line voltage V AB truly crosses zero.
  • control circuit 350 can also be designed to determine whether the voltage V LR is reversed after determining that the voltage V LR across the third phase bridge arm circuit 330 crosses zero, and after determining that the voltage V LR The sixth power semiconductor switch G6 is turned on only after the reverse direction. As another preferred implementation, the control circuit 350 may also be designed to turn on the sixth power semiconductor switch G6 only at 1/4 cycle after it is determined that the voltage V LR across the third phase bridge arm circuit 330 crosses zero. These preferred embodiments further ensure that G6 is turned on after voltage V LR truly crosses zero.
  • the current generated after the first to third phase bridge arm circuits 310 to 330 are closed gradually increases from zero, avoiding the problem of The inrush current causes the short-circuit protection to start incorrectly.
  • FIG. 3 and FIG. 4 illustrate that the first phase arm circuit 310 , the second phase arm circuit 320 and the third phase arm circuit 330 are star-connected, the present disclosure is not limited thereto.
  • the first phase arm circuit 310 , the second phase arm circuit 320 and the third phase arm circuit 330 are connected in a delta connection or in other ways, based on the concept of the present disclosure, they can also be connected at different times according to changes in the voltage of each phase.
  • Each power semiconductor switch in each phase bridge arm circuit is turned on to realize voltage zero-crossing startup.
  • Solid-state switching devices for single-phase and three-phase power supplies have been described above, and the operating methods of these solid-state switching devices are described below.
  • FIG. 5 is a schematic flowchart illustrating a method of operating a solid-state switching device for a single-phase power supply according to an embodiment of the present disclosure.
  • the solid-state switching device used for the single-phase power supply may be the solid-state switching device 100 shown in FIG. 1 , and its operating method includes steps S510 to S530.
  • step S510 the sampling value of the phase voltage of the phase arm circuit is obtained.
  • the sampled values p 1 , p 2 , and p 3 of the phase voltage V of the phase arm circuit 110 are obtained by the phase voltage sampling circuit 120 .
  • step S520 the direction of the phase voltage is determined based on the sampled value of the phase voltage, and a power semiconductor switch in the phase arm circuit 110 whose body diode direction is the same as the direction of the phase voltage is turned on.
  • the control circuit 130 determines the direction of the phase voltage V based on the fact that the average value of the latest three sampled values p 1 , p 2 , and p 3 of the phase voltages is greater than a predetermined positive threshold. is the positive direction, thereby turning on the second power semiconductor switch G2.
  • step S530 the other power semiconductor switch in the phase leg circuit 110 is turned on within half a cycle immediately after the zero crossing of the phase voltage V.
  • the control circuit 130 determines at time t i that the average value of the latest three sampling values pi -2 , pi -1 , and pi of the phase voltage V is less than a predetermined value. Positive threshold T to determine phase voltage V zero crossing.
  • the first power semiconductor switch G1 is turned on within half a cycle after time ti .
  • phase arm circuit 110 is closed when the phase voltage crosses zero, and the solid-state switching device 100 starts when the voltage crosses zero, and the current flowing through the load gradually increases from zero, without generating a large inrush current.
  • FIG. 6 is a schematic flow chart illustrating an operating method of a solid-state switching device for a three-phase power supply according to an embodiment of the present disclosure.
  • the solid-state switching device used for the three-phase power supply may be the solid-state switching device 300 as shown in FIG. 1 , and its operating method 600 includes steps S610 to S640.
  • step S610 the sampled value of the first phase voltage of the first phase arm circuit, the sampled value of the second phase voltage of the second phase arm circuit, and the sampled value of the third phase voltage of the third phase arm circuit are obtained.
  • the phase voltage sampling circuit 340 obtains the first phase of the first phase bridge arm circuit 310 , the second phase bridge arm circuit 320 and the third phase bridge arm circuit 330 respectively.
  • step S620 the direction of the line voltage between the first phase bridge arm circuit and the second phase bridge arm circuit is determined based on the sampled value of the first phase voltage and the sampled value of the second phase voltage, and the first phase bridge arm is turned on.
  • the control circuit 350 controls the control circuit 350 according to the latest three sampling values a 1 , a 2 , a 3 of the first phase voltage V A and the latest sampling value a 3 of the second phase voltage V B.
  • the three sampling values b 1 , b 2 , and b 3 derive the latest three sampling values u 1 , u 2 , and u 3 of the line voltage V AB between the first phase bridge arm circuit and the second phase bridge arm circuit. Since u 1 , u 2 and u 3 are all less than zero, the control circuit 350 determines that the direction of the line voltage V AB is the negative direction from phase B to phase A, and then turns on the first and fourth power semiconductor switches G1 and G4.
  • step S630 another power semiconductor switch in the first phase bridge arm circuit and another power semiconductor switch in the second phase bridge arm circuit are turned on within a half cycle immediately after the zero-crossing of the line voltage, and After the immediate zero-crossing of the line voltage, the direction of the voltage at both ends of the third-phase bridge arm circuit is determined based on the sampled value of the first-phase voltage, the sampled value of the second-phase voltage, and the sampled value of the third-phase voltage, and is turned on.
  • a power semiconductor switch whose body diode has the same direction as the voltage in the third-phase bridge circuit. For example, in the example described above in conjunction with FIGS.
  • the control circuit 350 controls the control circuit 350 according to the latest three sampling values a s-1 , a s , a s+1 , and the second phase voltage V A of the first phase voltage V A .
  • B ’s most The three new sampling values b s-1 , b s , and b s+1 and the latest three sampling values c s-1 , c s , and c s+1 of the second phase voltage V B are used to derive the third phase bridge arm circuit two The latest three sampling values w s-1 , w s , w s+1 of the voltage V LR at the terminal.
  • the control circuit 350 determines that the direction of the voltage V LR at both ends of the third-phase bridge arm circuit is from the R terminal to the L terminal, and then turns on the fifth phase bridge arm circuit.
  • step S640 another power semiconductor switch in the third phase bridge arm circuit is turned on within a half cycle immediately after the zero-crossing of the voltage at both ends of the third phase bridge arm circuit.
  • the control circuit 350 conducts the sixth phase within a half cycle immediately after the zero-crossing of the voltage V LR across the third phase bridge arm circuit 330 .
  • Power semiconductor switch G6 is another power semiconductor switch in the third phase bridge arm circuit turned on within a half cycle immediately after the zero-crossing of the voltage at both ends of the third phase bridge arm circuit.
  • the current generated by the first to third phase bridge arm circuits 310 to 330 in the solid-state switching device 300 gradually increases from zero after closing, without generating a large inrush current, thus avoiding the error of short circuit protection. start up.
  • the solid-state switching device 100 and its operating method 500, the solid-state switching device 300 and its operating method 600 according to the embodiments of the present disclosure can realize voltage zero-crossing startup, so that the current flowing through the load gradually increases from zero, avoiding the problem of large Short-circuit protection malfunction caused by inrush current.

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Abstract

提供了一种连接在单相供电电源和负载之间的固态开关设备，包括：相桥臂电路，包括第一和第二电力半导体开关，第一和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，第一和第二电力半导体开关的第二端连接并串联于单相供电电源的相中；相电压采样电路，获取相桥臂电路的相电压的采样值；以及控制电路，根据相电压的采样值确定相电压的方向，导通相桥臂电路中的其体二极管的方向与相电压的方向相同的一个电力半导体开关，并且在相电压的紧接的过零之后的半个周波内导通相桥臂电路中的另一个电力半导体开关。

Description

固态开关设备和用于该固态开关设备的操作方法
相关申请的交叉引用
本申请要求于2022年06月30日递交的第202210766764.6号中国专利申请的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开涉及一种固态开关设备和用于该固态开关设备的操作方法。
背景技术
交流电网经由固态开关为负载供电时，若固态开关启动时位于较高的电压值，则可能产生较大的冲击电流，特别是在容性负载的情况下。对于基于固态开关的接触器，由于其短路耐受能力差，一般被配置有针对短路电流的快速响应，该快速响应的时间通常小于5微秒。如此快速的短路保护响应容易使在固态开关启动时产生的冲击电流引起短路保护的误启动。因此，抑制固态开关启动时的冲击电流尤为重要。
发明内容
鉴于以上情况，本公开提供一种固态开关设备，其能够实现电压过零启动，使得流经负载的电流从零开始逐渐上升而不会产生较大冲击电流。
本公开的一方面提供了一种连接在单相供电电源和负载之间的固态开关设备。该固态开关设备包括：相桥臂电路、相电压采样电路和控制电路。该相桥臂电路包括第一和第二电力半导体开关，第一和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，第一和第二电力半导体开关的第二端连接并串联于单相供电电源的相中。该相电压采样电路获取相桥臂电路的相电压的采样值。该控制电路根据相电压的采样值确定相电压的方向，导通相桥臂电路中的其体二极管的方向与相电压的方向相同的一个电力半导体开关，并且在相电压的紧接的过零之后的半个周波内导通相桥臂电路中的另一个电力半导体开关。
可选地，该控制电路通过确定相电压的最新预定数量个采样值的平均值大于预定正阈值来确定相电压的方向为正方向，或者通过确定相电压的最新预定数量个采样值的平均值小于预定负阈值来确定相电压的方向为负方向。
可选地，在确定相电压的方向为正方向之后，控制电路通过确定相电压的最新预定数量个采样值的平均值小于预定正阈值来确定相电压过零；或者在确定相电压的方向为负方向之后，控制电路通过确定相电压的最新预定数量个采样值的平均值大于预定负阈值来确定相电压过零。
本公开的另一方面提供了一种连接在三相供电电源和负载之间的固态开关设备。该固态开关设备包括第一相桥臂电路、第二相桥臂电路、第三相桥臂电路、相电压采样电路和控制电路。第一相桥臂电路包括第一和第二电力半导体开关，第一和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，第一和第二电力半导体开关的第二端连接并串联于三相供电电源的第一相中。第二相桥臂电路包括第三和第四电力半导体开关，第三和第四电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，第三和第四电力半导体开关的第二端连接并串联于三相供电电源的第二相中。第三相桥臂电路包括第五和第六电力半导体开关，第五和第六电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，第五和第六电力半导体开关的第二端连接并串联于三相供电电源的第三相中。该相电压采样电路获取第一相桥臂电路的第一相电压的采样值、第二相桥臂电路的第二相电压的采样值和第三相桥臂电路的第三相电压的采样值。该控制电路，执行以下操作：根据第一相电压的采样值和第二相电压的采样值确定第一相桥臂电路和第二相桥臂电路之间的线电压的方向，导通第一相桥臂电路中的其体二极管的方向与线电压的方向相同的一个电力半导体开关和第二相桥臂电路中的其体二极管的方向与该线电压的方向相同的一个电力半导体开关；在该线电压的紧接的过零之后的半个周波内，导通第一相桥臂电路中的另一个电力半导体开关以及第二相桥臂电路中的另一个电力半导体开关，并且在所述线电压的紧接的过零之后，根据第一相电压的采样值、第二相电压的采样值和第三相电压的采样值确定第三相桥臂电路两端的电压的方向，导通第三相桥臂电路中的其体二极管的方向与电压的方向相同的一个电力半导体开关；以及在第三相桥臂电路的两端的电压的紧接的过零之后的半个周 波内，导通第三相桥臂电路中的另一个电力半导体开关。其中，第一相桥臂电路、第二相桥臂电路和第三相桥臂电路是星型连接的。
可选地，第一至第六电力半导体开关中的每一个是金属氧化物半导体场效应晶体管，第一端、第二端和控制端分别为漏极、源极和栅极；或者第一至第六电力半导体开关中的每一个是绝缘栅双极型晶体管，第一端、第二端和控制端分别为集电极、发射极和基极。
可选地，控制电路从第一相电压的最新预定数量个采样值和第二相电压的最新预定数量个采样值导出该线电压的最新预定数量个采样值，通过确定该线电压的最新预定数量个采样值的平均值大于预定正阈值来确定该线电压的方向为正方向，或者通过确定该线电压的最新预定数量个采样值的平均值小于预定负阈值来确定该线电压的方向为负方向。
可选地，控制电路从第一相电压的最新预定数量个采样值、第二相电压的最新预定数量个采样值和第三相电压的最新预定数量个采样值导出第三相桥臂电路两端的电压的最新预定数量个采样值，并通过确定第三相桥臂电路两端的电压的最新预定数量个采样值的平均值大于预定正阈值来确定第三相桥臂电路两端的电压的方向为正方向，或者通过确定第三相桥臂电路两端的电压的最新预定数量个采样值的平均值小于预定负阈值来确定第三相桥臂电路两端的电压的方向为负方向。
可选地，在确定线电压的方向为正方向之后，控制电路通过确定线电压的最新预定数量个采样值的平均值小于预定正阈值来确定线电压过零；或者在确定线电压的方向为负方向之后，控制电路通过确定线电压的最新预定数量个采样值的平均值大于预定负阈值来确定线电压过零。
可选地，在确定第三相桥臂电路两端的电压的方向为正方向之后，控制电路通过确定第三相桥臂电路两端的电压的最新预定数量个采样值的平均值小于预定正阈值来确定第三相桥臂电路两端的电压过零；或者在确定第三相桥臂电路两端的电压的方向为负方向之后，控制电路通过确定第三相桥臂电路两端的电压的最新预定数量个采样值的平均值大于预定负阈值来确定第三相桥臂电路两端的电压过零。
本公开的另一方面提供一种用于连接在单相供电电源和负载之间的固态开关设备的操作方法。该固态开关设备包括相桥臂电路，该相桥臂电路包括 第一和第二电力半导体开关，第一和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，且第一和第二电力半导体开关的第二端连接并串联于单相供电电源的相中。该操作方法包括：获取该相桥臂电路的相电压的采样值；根据相电压的采样值确定相电压的方向，导通该相桥臂电路中的其体二极管的方向与相电压的方向相同的一个电力半导体开关；在相电压的紧接的过零之后的半个周波内，导通该相桥臂电路中的另一个电力半导体开关。
本公开的另一方面一种用于连接在三相供电电源和负载之间的固态开关设备的操作方法。该固态开关设备包括星型连接的第一相桥臂电路、二相桥臂电路和第三相桥臂电路。第一相桥臂电路包括第一和第二电力半导体开关，第一和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，且第一和第二电力半导体开关的第二端连接并串联于三相供电电源的第一相中。第二相桥臂电路包括第三和第四电力半导体开关，第三和第四电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，且第三和第四电力半导体开关的第二端连接并串联于三相供电电源的第二相中。第三相桥臂电路包括第五和第六电力半导体开关，第五和第六电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，且第五和第六电力半导体开关的第二端连接并串联于三相供电电源的第三相中。该操作方法包括：获取第一相桥臂电路的第一相电压的采样值、第二相桥臂电路的第二相电压的采样值和第三相桥臂电路的第三相电压的采样值；根据第一相电压的采样值和第二相电压的采样值确定第一相桥臂电路和第二相桥臂电路之间的线电压的方向，导通第一相桥臂电路中的其体二极管的方向与该线电压的方向相同的一个电力半导体开关和第二相桥臂电路中的其体二极管的方向与该线电压的方向相同的一个电力半导体开关。在线电压的紧接的过零之后的半个周波内，导通第一相桥臂电路中的另一个电力半导体开关以及第二相桥臂电路中的另一个电力半导体开关，并且在所述线电压的紧接的过零之后，根据第一相电压的采样值、第二相电压的采样值和第三相电压的采样值确定第三相桥臂电路两端的电压的方向，导通第三相桥臂电路中的其体二极管的方向与电压的方向相同的一个电力半导体开关；以及在第三相桥臂电路的两端的电压的紧接的过零之后的半个周波内，导通第三相桥臂电路中的另一个 电力半导体开关。
根据本公开各方面的固态开关设备及用于这些固态开关设备的操作方法能够实现电压过零启动，使流经负载的电流从零开始逐渐增大，抑制冲击电流的产生，避免短路保护的误启动。
附图说明
通过下面结合附图对本公开实施例的描述，本公开的方面、特征和优点将变得更加清楚和容易理解，其中：
图1是示出根据本公开实施例的用于单相供电电源的固态开关设备的示意结构；
图2是示出图1中的控制电路的操作的一个示例；
图3是示出根据本公开实施例的用于三相供电电源的固态开关设备的示意结构；
图4是示出图3中的控制电路的操作的一个示例；
图5是示出根据本公开实施例的用于单相供电电源的固态开关设备的操作方法的示意流程图；以及
图6是示出根据本公开实施例的用于三相供电电源的固态开关设备的操作方法的示意流程图。
具体实施方式
下面将参考本公开的示例性实施例对本公开进行详细描述。然而，本公开不限于本文所描述的实施例，其可以以许多不同的形式来实施。所描述的实施例仅用于使本公开彻底和完整，并全面地向本领域的技术人员传递本公开的构思。所描述的各个实施例的特征可以互相组合或替换，除非明确排除或根据上下文应当排除。
除非另外定义，否则本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。
在附图中，相同的附图标记表示相同或类似的结构或功能的组成部分， 并且以下描述中将省略关于它们的重复描述。
如前所述，若固态开关在启动时刻位于较高的电压值，则可能产生较大的冲击电流而引起短路保护的误启动。根据本公开实施例的固态开关设备能够实现电压过零启动，抑制冲击电流，从而避免短路保护的误启动。
图1是示出根据本公开实施例的用于单相供电电源的固态开关设备的示意结构。
参考图1，固态开关设备100连接在单相供电电源和负载之间。单相供电电源经由固态开关设备100为负载供电。固态开关设备100包括相桥臂电路110、相电压采样电路120和控制电路130。
相桥臂电路110包括第一电力半导体开关G1和第二电力半导体开关G2。第一电力半导体开关G1包括第一端、第二端和控制端且包括体二极管D1。第二电力半导体开关G2包括第一端、第二端和控制端且包括体二极管D2。第一和第二电力半导体开关G1、G2的第二端连接并串联于该单相供电电源的相中。
第一电力半导体开关G1和第二电力半导体开关G2中的每一个可以使用金属氧化物半导体场效应晶体管MOSFET或者绝缘栅双极型晶体管IGBT来实施。当使用MOSFET时，第一或第二电力半导体开关G1、G2的第一端是漏极、第二端是源极、控制端是栅极。当使用IGBT时，第一或第二电力半导体开关G1、G2的第一端是集电极、发射极和基极。如本领域所熟知的，MOSFET或IGBT中的体二极管的方向与MOSFET或IGBT导通时的流向相反。例如，N型MOSFET中的体二极管的方向是源极向漏极，P型MOSFET中的体二极管的方向是漏极向源极。为便于说明，图1中将第一和第二电力半导体开关G1、G2示出为N型MOSFET。
相电压采样电路120用于获取施加到相桥臂电路110的相电压V的采样值，例如，通过按照一定采样频率(例如48点/周波)对相电压V进行采样。相电压采样电路120可以使用电压互感器、分压电阻、模数转换器和数模转换器或其组合来实施或者使用其他已知的电压采样技术来实施。
控制电路130与相电压采样电路120连接以从相电压采样电路120接收相电压V的采样值。控制电路130还与第一和第二电力半导体开关G1、G2的控制端连接，以通过向其控制端施加驱动电压来将其导通。控制电路130可 以使用例如微控制处理器(Microcontroller Unit，MCU)或其他硬件或软件的组合来实施。
为了实现电压过零启动，控制电路130根据相电压V的采样值确定相电压V的方向，并导通相桥臂电路110的第一和第二电力半导体开关G1、G2中的其体二极管的方向与相电压V的方向相同的一个电力半导体开关。然后，在相电压V的紧接的过零之后的半个周波内导通第一和第二电力半导体开关G1、G2中的另一电力半导体开关。下面结合图1和图2来说明控制电路130的操作。
图2是示出图1中的控制电路130的操作的一个示例。
参考图2，曲线200是由相电压采样电路120获取的相电压V的采样值所拟合出的相电压V的波形。单相供电电源在0时刻接通，相电压V被施加在相桥臂电路110上。相电压采样电路120获取相电压V的采样值。例如，图2中示出的p1至p3分别指时刻t1至t3的相电压V的采样值，pi-2至pi分别指时刻ti-2至ti的相电压V的采样值，pj指时刻tj的相电压V的采样值。p1至p3是3个连续的采样值，pi-2至pi是3个连续的采样值。
单相供电电源接通后，控制电路130首先确定相电压V的方向，并导通第一相桥臂电路110中的其体二极管的方向与相电压V的方向相同的一个电力半导体开关。
作为一种实施方式，控制电路130可以通过确定相电压V的最新预定数量个(例如，3个)采样值的平均值大于预定正阈值T来确定相电压V的方向为正方向，即位于周波的正半周期，或者通过确定这些采样值的平均值小于预定负阈值-T来确定相电压V的方向为负方向，即位于周波的负半周期。若相电压V的最新预定数量个采样值的平均值既不满足大于预定正阈值T也不满足小于预定负阈值-T，则等待相电压V的下一个采样值产生之后再重复此步骤。
例如，控制电路130接收到最新的相电压V的采样值为t3时刻的p3，则控制电路130取最新的连续3个采样值p1、p2和p3。通过确定p1、p2和p3的平均值大于预定正阈值T，控制电路130确定此时相电压V处于周波的正半周期，即方向为正方向(如图1中虚线箭头所示)。由于第二电力半导体开关G2的体二极管D2的方向与此时相电压V的方向相同，控制电路130向第二 电力半导体开关G2的控制端施加驱动电压将其导通。
时刻tj为相电压V的紧接的过零时刻，tq为tj之后的下一个过零时刻。在t3至tj期间，相电压V的方向为正方向，虽然第二电力半导体开关G2导通，但第一电力半导体开关G1仍关断且体二极管D1的方向也与相电压V的方向相反，相桥臂电路110仍断开。
直到时刻tj，相电压V过零，方向变成负方向，体二极管D1的方向与此时相电压V的方向相同，则第二电力半导体开关G2的漏极、源极和体二极管D1形成导电路径，相桥臂电路110闭合，电流从零开始逐渐增大。
在过零时刻tj之后的半个周波内，即在下一个过零时刻tq之前，控制电路130向第一电力半导体开关G1的控制端施加驱动电压而将其导通。此后，第一电力半导体开关G1的漏极、源极、第二电力半导体开关G2的源极、漏极形成导电路径。
在以上过程中，控制电路130需要确定相电压V的过零时刻tj。容易理解，由于相电压采样电路120不一定获得过零时刻tj的相电压的采样值，所以控制电路130被设计为将过零时刻tj前后一定时间范围内的时刻近似认定为过零时刻，这不会影响对冲击电流的抑制效果。
作为一种实施方式，在确定相电压V的方向为正方向之后，控制电路130通过确定相电压V的最新预定数量个采样值的平均值小于预定正阈值T来确定相电压V过零。或者，在确定相电压V的方向为负方向之后，控制电路130通过确定相电压V的最新预定数量个采样值的平均值大于预定负阈值-T来确定相电压V过零。预定正阈值T和预定负阈值-T选择为使得按此方式所确定的过零时刻在精确的过零时刻前附近。
例如，如图2所示，控制电路130在时刻ti接收到新的相电压V的采样值pi，便取相电压V的最新3个采样值pi-2、pi-1和pi。在pi-2、pi-1和pi的平均值小于预定正阈值T的情况下，控制电路130将时刻ti认定为过零时刻。时刻ti虽然可能不等于精确的过零时刻tj，但逼近精确的过零时刻tj。控制电路130将在时刻ti之后的半个周波内导通第一电力半导体开关G1，即在时刻ti和时刻tp之间导通G1。
作为一种优选实施方式，控制电路130还可以被设计为在将时刻ti认定为过零时刻之后判断相电压V的方向是否变成负方向，并且在判断出相电压 V的方向变成负方向之后才导通第一电力半导体开关G1。例如，控制电路130在将时刻ti认定为过零时刻之后，通过计算最新的连续3个采样值的平均值是否小于预定负阈值-T来确定相电压V的方向是否变成负方向。一旦在时刻tk处确定了相电压V进入负方向，就导通第一电力半导体开关G1。
作为另一种优选实施方式，控制电路130还可以被设计为将时刻ti认定为过零时刻之后的1/4周波处才导通第一电力半导体开关G1。即，在相电压V接近负方向的峰值处才导通G1，如图所示，在刻tm导通G1。
以上的优选实施方式进一步确保在相电压真正过零之后才导通G1，其他能够实现此目的的实施方式也是可能的。此外，即使在时刻ti和tk之间导通了第一电力半导体开关G1，由于此间的相电压V已经接近零，相桥臂电路110闭合时的电流也接近零，对于抑制冲击电流来说也是足够的。
这里，选取相电压的连续多个采样值的平均值来判断相电压的方向和过零是为了避免由于干扰造成的错误采样值而引起错误判断。本公开对用于判断电压方向和过零的方式不限于此。例如，也可以使用多个采样值的中值、多个采样值之和等作为参考标准来判断，采样值的数量也可以根据相电压采样电路的采样频率和采样精度适应性的改变。
如此，根据本公开实施例的用于单相供电电源的固态开关设备100实现了电压过零启动，使得流经负载的电流从零开始逐渐上升，不会产生较大的冲击电流，从而不会引起短路保护的误启动。
图3是示出根据本公开实施例的用于三相供电电源的固态开关设备的结构示意图。
参考图3，根据本公开实施例的用于三相供电电源的固态开关设备300连接在三相供电电源和负载之间。固态开关设备300包括第一相桥臂电路310、第二相桥臂电路320和第二相桥臂电路330、相电压采样电路340和控制电路350。第一相桥臂电路310、第二相桥臂电路320和第三相桥臂电路330星型连接的。
第一相桥臂电路310包括第一电力半导体开关G1和第二电力半导体开关G2。第一电力半导体开关G1包括第一端、第二端和控制端且包括体二极管D1。第二电力半导体开关G2包括第一端、第二端和控制端且包括体二极管D2。第一和第二电力半导体开关G1、G2的第二端连接并串联于该三相供 电电源的相A中。
第二相桥臂电路310包括第三电力半导体开关G3和第四电力半导体开关G4。第三电力半导体开关G3包括第一端、第二端和控制端且包括体二极管D3。第四电力半导体开关G4包括第一端、第二端和控制端且包括体二极管D4。第三和第四电力半导体开关G3、G4的第二端连接并串联于该三相供电电源的相B中。
第三相桥臂电路330包括第五电力半导体开关G5和第六电力半导体开关G6。第三电力半导体开关G5包括第一端、第二端和控制端且包括体二极管D5。第四电力半导体开关G6包括第一端、第二端和控制端且包括体二极管D6。第三和第四电力半导体开关G5、G6的第二端连接并串联于该三相供电电源的相C中。
与第一和第二电力半导体开关G1和G2相同的，第三至第六电力半导体开关G3至G6中的每一个也可以使用MOSFET或者IGBT来实施，此处不再重复描述。为便于说明，图3中将第一至第六电力半导体开关G1至G6也示出为N型MOSFET。
相电压采样电路340用于获取施加到第一相桥臂电路310的第一相电压VA的采样值、施加到第二相桥臂电路320的第二相电压VB的采样值和施加到第三相桥臂电路330的第三相电压VC的采样值。相电压采样电路340可以与相电压采样电路120类似地实施，此处不再重复描述。
为了实现电压过零启动，控制电路350根据各相电压的变化选取合适的时机来分别导通第一至第六电力半导体开关G1至G6。
具体地，控制电路350首先根据第一相电压VA的采样值和第二相电压VB的采样值确定第一相桥臂电路310和第二相桥臂电路320之间的线电压VAB的方向，并导通第一相桥臂电路310中的其体二极管的方向与线电压VAB的方向相同的一个电力半导体开关(G1或G2)和第二相桥臂电路320中的其体二极管的方向与线电压VAB的方向相同的一个电力半导体开关(G3或G4)。在线电压VAB的紧接的过零的半个周波内，控制电路350导通第一相桥臂电路310中的另一个电力半导体开关(G2或G1)和第二相桥臂电路320中的另一个电力半导体开关(G4或G3)。并且，在线电压VAB的该紧接的过零之后，控制电路350根据第一相电压VA的采样值、第二相电压VB的采样 值和第三相电压VC的采样值确定第三相桥臂电路330两端的电压的方向，并且导通第三相桥臂电路330中的其体二极管的方向与第三相桥臂电路330两端的电压的方向相同的一个电力半导体开关(G5或G6)。然后，在第三相桥臂电路330的两端的电压的紧接的过零之后的半个周波内，导通第三相桥臂电路330中的另一个电力半导体开关(G6或G5)。下面结合图3和图4来说明控制电路350的操作。
图4是示出图3中的控制电路350的操作的一个示例。
参考图4，曲线410、420、430分别是由相电压采样电路340获取的第一相电压VA的采样值、第二相电压VB的采样值、第三相电压VC的采样值所拟合出的第一相电压VA的波形、第二相电压VB的波形、第三相电压VC的波形。曲线440是由曲线410和曲线420导出的相A和相B之间的线电压VAB的波形。曲线450是曲线410、曲线420和曲线430导出的相C两端的电压VLR的波形，图4中用附图标记L、R分别表示第三相桥臂电路330的两端。
三相供电电源在0时刻接通，第一至第三相电压VA、VB、VC分别被施加到相桥臂电路310、320、330上。相电压采样电路340获取每一相电压的采样值。例如，图4中示出的a1至a3分别指时刻t1至t3的相电压VA的采样值，b1至b3分别指时刻t1至t3的相电压VB的采样值。从采样值a1至a3和b1至b3可以导出AB两相之间的线电压VAB的分别与时刻t1至t3对应的采样值u1至u3。其中，a1至a3是3个连续的采样值，b1至b3是3个连续的采样值。
三相供电电源接通后，控制电路350首先根据第一相电压VA的采样值和第二相电压VB的采样值确定第一相桥臂电路310和第二相桥臂电路320之间的线电压VAB的方向。
作为一种实施方式，控制电路350可以通过从第一相电压VA的最新预定数量个(例如，3个)采样值和第二相电压VB的最新预定数量个采样值导出最新预定数量个线电压VAB的采样值。然后，若该最新预定数量个线电压VAB的采样值的平均值大于预定正阈值T，则确定线电压VAB的方向为正方向，即从相A到相B。若该最新预定数量个线电压VAB的采样值的平均值小于预定负阈值，则确定线电压VAB的方向为负方向，即从相B到相A。若该最新 预定数量个线电压VAB的采样值既不满足大于正阈值T也不满足小于负阈值-T，则等待线电压VAB的下一个采样值产生之后再重复此步骤。
例如，控制电路350在时刻t3接收到相电压VA的最新采样值a3、相电压VB的最新采样值b3。控制电路350取第一相电压VA的最新3个采样值a1、a2、a3和第二相电压VB的最新3个采样值b1、b2、b3，并导出最新3个线电压VAB的采样值，即u1＝a1-b1、u2＝a2-b2和u3＝a3-b3。在u1、u2和u3的平均值小于预定负阈值-T的情况下，控制电路350确定线电压VAB的方向为负方向，即从相B到相A。由于第一相桥臂电路310中的第一电力半导体开关G1的体二极管D1和第二相桥臂电路320中的第四电力半导体开关G4的体二极管D4的方向与从相B到相A的方向相同，控制电路350通过向第一和第四电力半导体开关G1和G4的控制端施加驱动电压而导通G1和G4。
tn时刻为线电压VAB的紧接的过零时刻，ty时刻为线电压VAB的下一个过零时刻。在t3至tn期间，虽然第一和第四电力半导体开关G1和G4导通，但第二和第三电力半导体开关G2和G3仍关断且它们的体二极管D2、D3的方向与第二方向相反，第一相桥臂电路310和第二相桥臂电路320仍断开。
在时刻tn，线电压VAB过零，方向变成正方向，即从相A到相B。此时，由于体二极管D2、D3的方向与从相A到相B的方向相同，在第一相桥臂电路310中，由第一电力半导体开关G1的源极、漏极和第二电力半导体开关G2的体二极管D2形成导电路径，并且在第二相桥臂电路320中，由第三电力半导体开关G3的体二极管D3、第四电力半导体开关G4的源极和漏极形成导电路径。第一和第二相桥臂电路310和320闭合且电流从零开始逐渐增大。
在时刻tn之后的半个周波内，即在时刻tn至时刻ty之间，导通第一相桥臂电路310中的第二电力半导体开关G2和第二相桥臂电路中的第三电力半导体开关G3。之后，在第一相桥臂电路310中，由第一和第二电力半导体开关G1和G2形成导电路径，并且在第二相桥臂电路320中，由第三和第四电力半导体开关G3和G4形成导电路径。
接下来针对第三相桥臂电路330，在时刻tn第一和第二相桥臂电路310和320闭合之后，控制电路350可以根据第一相电压VA的采样值、第二相电压VB的采样值和第三相电压VC的采样值确定第三相桥臂电路330两端的电压 VLR的方向，并导通第三相桥臂电路330中的其二极管与电压VLR的方向相同的一个电力半导体开关。
如图4所示，在ts+1时刻，控制电路350根据第一相电压VA的最新3个采样值as-1、as、as+1，第二相电压VB的最新3个采样值bs-1、bs、bs+1和第三相电压VC的最新3个采样值cs-1、cs、cs+1导出第三相桥臂电路330两端的电压VLR最新3个采样值ws-1＝cs-1-0.5*(as-1+bs-1)、ws＝cs-0.5*(as+bs)、ws+1＝cs+1-0.5*(as+1+bs+1)。在ws-1、ws、ws+1的平均值小于预定负阈值-T的情况下，控制电路350确定第三相桥臂电路330两端的电压VLR的方向为负方向，即从R端到L端。此时，体二极管D5的方向与电压VLR的方向相同，控制电路350通过向第五电力半导体开关G5的控制端施加驱动电压而导通G5。
时刻tx为第三相桥臂电路330两端的电压VLR的紧接的过零时刻，时刻tz为其下一个过零时刻。在时刻tx，第三相桥臂电路330两端的电压VLR过零，方向变成正方向，即从L端到R端。此时，由于体二极管D6的方向与电压VLR的方向相同，则第五电力半导体开关G5的漏极、源极和体二极管D6形成导电路径。第三相桥臂电路330闭合且电流从零开始逐渐增大。
在时刻tx之后的半个周波内，即在第三相桥臂电路330两端的电压VLR的下一个过零时刻tz之前，控制电路350向第六电力半导体开关G6的控制端施加驱动电压而导通G6。此后，第三相桥臂电路330中由第五电力半导体开关G5的漏极、源极和第六电力半导体开关G6的源极、漏极形成导电路径。
在以上过程中，控制电路350需要确定相A和相B之间的线电压VAB过零时刻以及第三相桥臂电路330两端的电压的过零时刻。容易理解，由于相电压采样电路340不一定获得精确的过零时刻tn、tx的各相电压的采样值，所以控制电路350被设计为将精确的过零时刻tn、tx前后一定范围内的时刻近似认定过零时刻，这不会影响对冲击电流的抑制效果。
作为一种实施方式，在确定线电压VAB的方向为正方向之后，控制电路350通过确定线电压VAB的最新预定数量个采样值的平均值小于预定正阈值T来确定线电压VAB过零。或者，在确定线电压VAB的方向为负方向之后，控制电路350通过确定线电压VAB的最新预定数量个采样值的平均值小于预定负阈值-T来确定线电压VAB过零。
在本示例中，控制电路350在时刻t3已经确定了线电压VAB的方向为负 方向并导通了第一和第四电力半导体开关G1和G4。之后，控制电路350每接收到新的第一和第二相电压VA和VB的采样值就导出新的线电压VAB的采样值。然后，通过确定此时线电压VAB的最新预定数量个采样值小于预定阈值T来确定线电压VAB过零。
作为一种实施方式，在确定第三相桥臂电路330两端的电压VLR的方向为正方向之后，通过确定第三相桥臂电路330两端的电压的最新预定数量个采样值的平均值小于预定正阈值T来确定第三相桥臂电路330两端的电压过零。或者，在确定第三相桥臂电路330两端的电压VLR的方向为负方向之后，通过确定第三相桥臂电路330两端的电压VLR的最新预定数量个采样值的平均值大于预定负阈值-T来确定第三相桥臂电路两端的电压过零。
在本示例中，控制电路350在时刻ts+1已经确定了第三相桥臂电路330两端的电压VLR的方向为负方向，即从R端到L端，并导通了第五电力半导体开关G5。之后，控制电路350每接收到第一、第二和第三相电压VA、VB和VC的新的采样值，就导出电压VLR的新的采样值。然后通过确定此时的电压VLR的最新预定数量个采样值大于预定负阈值-T来确定电压VLR过零。
这与前面结合图2描述的由控制电路130根据相电压V的采样值pi-2、pi-1和pi的平均值小于预定正阈值T来确定相电压V过零的原理相同，因此不再赘述。
作为一种优选实施方式，在图4的示例中，控制电路350可以被设计为在确定线电压VAB过零之后判断线电压VAB是否反向，并且在判断出线电压VAB反向之后才导通第二和第三电力半导体开关G2和G3。作为另一种优选实施方式，控制电路350也可以被设计为在确定线电压VAB过零之后的1/4周波处才导通第二和第三电力半导体开关G2和G3。这些优选实施方式进一步确保在线电压VAB真正过零之后导通G2和G3。
同理，作为一种优选实施方式，控制电路350也可以被设计为在确定第三相桥臂电路330两端的电压VLR过零之后判断电压VLR是否反向，并且在判断出电压VLR反向之后才导通第六电力半导体开关G6。作为另一种优选实施方式，控制电路350也可以被设计为在确定第三相桥臂电路330两端的电压VLR过零之后的1/4周波处才导通第六电力半导体开关G6。这些优选实施方式进一步确保在电压VLR真正过零之后导通G6。
由此，在根据本公开实施例的用于三相供电电源的固态开关设备300中，第一至第三相桥臂电路310至330闭合后产生的电流均从零开始逐渐上升，避免了由冲击电流引起短路保护误启动。
虽然图3和图4是以第一相桥臂电路310、第二相桥臂电路320和第三相桥臂电路330为星型连接来进行说明的，但是本公开并不限于此。当第一相桥臂电路310、第二相桥臂电路320和第三相桥臂电路330是三角形连接或其他连接方式时，基于本公开的构思，同样可以根据各相电压的变化在不同时刻导通各相桥臂电路中的各电力半导体开关来实现电压过零启动。
以上描述了分别用于单相和三相供电电源的固态开关设备，下面描述这些固态开关设备的操作方法。
图5是示出根据本公开实施例的用于单相供电电源的固态开关设备的操作方法的示意流程图。
用于单相供电电源的固态开关设备可以如图1所示的固态开关设备100，其操作方法包括步骤S510至S530。
在步骤S510，获取相桥臂电路的相电压的采样值。例如，在前面结合图1和图2描述的示例中，由相电压采样电路120获取相桥臂电路110的相电压V的采样值p1、p2、p3。
在步骤S520，根据相电压的采样值确定相电压的方向，并导通相桥臂电路110中的其体二极管的方向与相电压的方向相同的一个电力半导体开关。例如，在前面结合图1和图2描述的示例中，控制电路130根据最新获取的3个相电压的采样值p1、p2、p3的平均值大于预定正阈值确定相电压V的方向为正方向，并由此导通第二电力半导体开关G2。
在步骤S530，在相电压V的紧接的过零之后的半个周波内导通相桥臂电路110中的另一个电力半导体开关。例如，在前面结合图1和图2描述的示例中，控制电路130在时刻ti通过确定最新3个相电压V的采样值pi-2、pi-1、pi的平均值小于预定正阈值T来确定相电压V过零。并在时刻ti后的半个周波内导通第一电力半导体开关G1。
如此，相桥臂电路110在相电压过零时闭合，固态开关设备100实现电压过零启动，流经负载的电流从零开始逐渐增大，不会产生较大的冲击电流。
以上仅结合图5描述了操作方法500的部分，并且操作方法500可以对 前述固态开关设备100的各方面以及相关附图进行参考和引用。例如，前述固态开关设备100的各方面可以被修改来实现操作方法500的一个或多个步骤。为避免重复，此处不再赘述。
图6是示出根据本公开实施例的用于三相供电电源的固态开关设备的操作方法的示意流程图。
用于三相供电电源的固态开关设备可以是如图1所示的固态开关设备300，其操作方法600包括步骤S610至S640。
在步骤S610，获取第一相桥臂电路的第一相电压的采样值、第二相桥臂电路的第二相电压的采样值和第三相桥臂电路的第三相电压的采样值。例如，在前面结合图3和图4描述的示例中，由相电压采样电路340分别获取第一相桥臂电路310、第二相桥臂电路320和第三相桥臂电路330的第一相电压VA的采样值a1、a2、a3、第二相电压VB的采样值b1、b2、b3和第三相电压VC的采样值c1、c2、c3。
在步骤S620，根据第一相电压的采样值和第二相电压的采样值确定第一相桥臂电路和第二相桥臂电路之间的线电压的方向，并导通第一相桥臂电路中的其体二极管的方向与线电压的方向相同的一个电力半导体开关和第二相桥臂电路中的其体二极管的方向与线电压的方向相同的一个电力半导体开关。例如，在如前面结合图3和图4描述的示例中，由控制电路350根据第一相电压VA的最新3个采样值a1、a2、a3、第二相电压VB的最新3个采样值b1、b2、b3导出第一相桥臂电路和第二相桥臂电路之间的线电压VAB的最新3个采样值u1、u2和u3。由于u1、u2和u3都小于零，控制电路350确定线电压VAB的方向是从相B到相A的负方向，继而导通第一和第四电力半导体开关G1和G4。
在步骤S630，在线电压的紧接的过零之后的半个周波内，导通第一相桥臂电路中的另一个电力半导体开关以及第二相桥臂电路中的另一个电力半导体开关，并且在线电压的该紧接的过零之后，根据第一相电压的采样值、第二相电压的采样值和第三相电压的采样值确定第三相桥臂电路两端的电压的方向，导通第三相桥臂电路中的其体二极管的方向与电压的方向相同的一个电力半导体开关。例如，在如前面结合图3和图4描述的示例中，控制电路350根据第一相电压VA的最新3个采样值as-1、as、as+1、第二相电压VB的最 新3个采样值bs-1、bs、bs+1以及第二相电压VB的最新3个采样值cs-1、cs、cs+1导出第三相桥臂电路两端的电压VLR的最新3个采样值ws-1、ws、ws+1。由于采样值ws-1、ws、ws+1都小于零，控制电路350确定第三相桥臂电路两端的电压VLR的方向是从到R端到L端，继而导通第五电力半导体开关G5。
在步骤S640，在第三相桥臂电路的两端的电压的紧接的过零之后的半个周波内，导通第三相桥臂电路中的另一个电力半导体开关。例如，在如前面结合图3和图4描述的示例中，控制电路350在第三相桥臂电路330的两端的电压VLR的紧接的过零之后的半个周波内，导通第六电力半导体开关G6。
如此，固态开关设备300中的第一至第三相桥臂电路310至330在闭合后产生的电流均从零开始逐渐增大，不会产生较大的冲击电流，从而避免了短路保护的误启动。
以上仅结合图6描述了操作方法600的部分，并且操作方法600可以对前述固态开关设备300的各方面以及相关附图进行参考和引用。例如，前述固态开关设备300及其各方面可以被修改来实现操作方法600的一个或多个步骤。为避免重复，此处不再赘述。
根据本公开实施例的固态开关设备100及其操作方法500、固态开关设备300及其操作方法600能够实现电压过零启动，使得流经负载的电流从零开始逐渐增大，避免了由于较大冲击电流而引起的短路保护误启动。
本领域技术人员应该理解，上述的具体实施例仅是示例而非限制，可以根据设计需求和其它因素对本公开的实施例进行各种修改、组合、部分组合和替换，只要它们在所附权利要求或其等同的范围内，即属于本公开所要保护的权利范围。

Claims (18)

  1. 一种固态开关设备，连接在单相供电电源和负载之间，包括：
    相桥臂电路，包括第一电力半导体开关和第二电力半导体开关，所述第一电力半导体开关和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，所述第一电力半导体开关和第二电力半导体开关的第二端连接并串联于所述单相供电电源的相中；
    相电压采样电路，获取所述相桥臂电路的相电压的采样值；以及
    控制电路，根据所述相电压的采样值确定所述相电压的方向，导通所述相桥臂电路中的其体二极管的方向与所述相电压的方向相同的一个电力半导体开关，并且在所述相电压的紧接的过零之后的半个周波内导通所述相桥臂电路中的另一个电力半导体开关。
  2. 根据权利要求1所述的固态开关设备，其中
    所述第一电力半导体开关和第二电力半导体开关中的每一个是金属氧化物半导体场效应晶体管，所述第一端、所述第二端和所述控制端分别为漏极、源极和栅极；或者
    所述第一电力半导体开关和第二电力半导体开关中的每一个是绝缘栅双极型晶体管，所述第一端、所述第二端和所述控制端分别为集电极、发射极和基极。
  3. 根据权利要求1所述的固态开关设备，其中，
    所述控制电路通过确定所述相电压的最新预定数量个采样值的平均值大于预定正阈值来确定所述相电压的方向为正方向，或者通过确定所述相电压的最新预定数量个采样值的平均值小于预定负阈值来确定所述相电压的方向为负方向。
  4. 根据权利要求3所述的固态开关设备，其中，
    在确定所述相电压的方向为正方向之后，所述控制电路通过确定所述相电压的最新预定数量个采样值的平均值小于预定正阈值来确定所述相电压过零；或者
    在确定所述相电压的方向为负方向之后，所述控制电路通过确定所述相电压的最新预定数量个采样值的平均值大于预定负阈值来确定所述相电压过 零。
  5. 一种固态开关设备，连接在三相供电电源和负载之间，包括：
    第一相桥臂电路，包括第一电力半导体开关和第二电力半导体开关，所述第一电力半导体开关和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，所述第一电力半导体开关和第二电力半导体开关的第二端连接并串联于所述三相供电电源的第一相中；
    第二相桥臂电路，包括第三电力半导体开关和第四电力半导体开关，所述第三电力半导体开关和第四电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，所述第三电力半导体开关和第四电力半导体开关的第二端连接并串联于所述三相供电电源的第二相中；
    第三相桥臂电路，包括第五电力半导体开关和第六电力半导体开关，所述第五电力半导体开关和第六电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，所述第五电力半导体开关和第六电力半导体开关的第二端连接并串联于所述三相供电电源的第三相中；
    相电压采样电路，获取所述第一相桥臂电路的第一相电压的采样值、所述第二相桥臂电路的第二相电压的采样值和所述第三相桥臂电路的第三相电压的采样值；
    控制电路，执行以下操作：
    根据所述第一相电压的采样值和所述第二相电压的采样值确定所述第一相桥臂电路和所述第二相桥臂电路之间的线电压的方向，导通所述第一相桥臂电路中的其体二极管的方向与所述线电压的方向相同的一个电力半导体开关和所述第二相桥臂电路中的其体二极管的方向与所述线电压的方向相同的一个电力半导体开关；
    在所述线电压的紧接的过零之后的半个周波内，导通所述第一相桥臂电路中的另一个电力半导体开关以及所述第二相桥臂电路中的另一个电力半导体开关，并且在所述线电压的所述紧接的过零之后，根据所述第一相电压的采样值、所述第二相电压的采样值和所述第三相电压的采样值确定所述第三相桥臂电路两端的电压的方向，导通所述第三相桥臂电路中的其体二极管的方向与所述电压的方向相同的一个电力半导体开关；以及
    在所述第三相桥臂电路的两端的电压的紧接的过零之后的半个周波 内，导通所述第三相桥臂电路中的另一个电力半导体开关，
    其中，所述第一相桥臂电路、所述第二相桥臂电路和所述第三相桥臂电路是星型连接的。
  6. 根据权利要求5所述的固态开关设备，其中
    所述第一至第六电力半导体开关中的每一个是金属氧化物半导体场效应晶体管，所述第一端、所述第二端和所述控制端分别为漏极、源极和栅极；或者
    所述第一至第六电力半导体开关中的每一个是绝缘栅双极型晶体管，所述第一端、所述第二端和所述控制端分别为集电极、发射极和基极。
  7. 根据权利要求5所述的固态开关设备，其中，
    所述控制电路从所述第一相电压的最新预定数量个采样值和所述第二相电压的最新预定数量个采样值导出所述线电压的最新预定数量个采样值，通过确定所述线电压的最新预定数量个采样值的平均值大于预定正阈值来确定所述线电压的方向为正方向，或者通过确定所述线电压的最新预定数量个采样值的平均值小于预定负阈值来确定所述线电压的方向为负方向。
  8. 根据权利要求5所述的固态开关设备，其中，
    所述控制电路从所述第一相电压的最新预定数量个采样值、所述第二相电压的最新预定数量个采样值和所述第三相电压的最新预定数量个采样值导出所述第三相桥臂电路两端的电压的最新预定数量个采样值，并通过确定所述第三相桥臂电路两端的电压的最新预定数量个采样值的平均值大于预定正阈值来确定第三相桥臂电路两端的电压的方向为正方向，或者通过确定所述第三相桥臂电路两端的电压的最新预定数量个采样值的平均值小于预定负阈值来确定第三相桥臂电路两端的电压的方向为负方向。
  9. 根据权利要求7所述的固态开关设备，其中，
    在确定所述线电压的方向为正方向之后，所述控制电路通过确定所述线电压的最新预定数量个采样值的平均值小于所述预定正阈值来确定所述线电压过零；或者
    在确定所述线电压的方向为负方向之后，所述控制电路通过确定所述线电压的最新预定数量个采样值的平均值大于所述预定负阈值来确定所述线电压过零。
  10. 根据权利要求8所述的固态开关设备，其中，
    在确定第三相桥臂电路两端的电压的方向为正方向之后，所述控制电路通过确定所述第三相桥臂电路两端的电压的最新预定数量个采样值的平均值小于所述预定正阈值来确定所述第三相桥臂电路两端的电压过零；或者
    在确定第三相桥臂电路两端的电压的方向为负方向之后，所述控制电路通过确定所述第三相桥臂电路两端的电压的最新预定数量个采样值的平均值大于所述预定负阈值来确定所述第三相桥臂电路两端的电压过零。
  11. 一种用于固态开关设备的操作方法，所述固态开关设备连接在单相供电电源和负载之间，所述固态开关设备包括相桥臂电路，所述相桥臂电路包括第一电力半导体开关和第二电力半导体开关，所述第一电力半导体开关和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，且所述第一电力半导体开关和第二电力半导体开关的第二端连接并串联于所述单相供电电源的相中，所述操作方法包括：
    获取所述相桥臂电路的相电压的采样值；
    根据所述相电压的采样值确定所述相电压的方向，导通所述相桥臂电路中的其体二极管的方向与所述相电压的方向相同的一个电力半导体开关；
    在所述相电压的紧接的过零之后的半个周波内，导通所述相桥臂电路中的另一个电力半导体开关。
  12. 根据权利要求11所述的操作方法，其中，根据所述相电压的采样值确定所述相电压的方向，包括：
    通过确定所述相电压的最新预定数量个采样值的平均值大于预定正阈值来确定所述相电压的方向为正方向，或者通过确定所述相电压的最新预定数量个采样值的平均值小于预定负阈值来确定所述相电压的方向为负方向。
  13. 根据权利要求12所述的操作方法，其中：
    在确定所述相电压的方向为正方向之后，通过确定所述相电压的最新预定数量个采样值的平均值小于所述预定正阈值来确定所述相电压过零；
    在确定所述相电压的方向为负方向之后，通过确定所述相电压的最新预定数量个采样值的平均值大于所述预定负阈值来确定所述相电压过零。
  14. 一种用于固态开关设备的操作方法，所述固态开关设备连接在三相供电电源和负载之间，所述固态开关设备包括星型连接的第一相桥臂电路、 二相桥臂电路和第三相桥臂电路，所述第一相桥臂电路包括第一电力半导体开关和第二电力半导体开关，所述第一电力半导体开关和第二电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，且所述第一电力半导体开关和第二电力半导体开关的第二端连接并串联于所述三相供电电源的第一相中，第二相桥臂电路包括第三电力半导体开关和第四电力半导体开关，所述第三电力半导体开关和第四电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，且所述第三电力半导体开关和第四电力半导体开关的第二端连接并串联于所述三相供电电源的第二相中，所述第三相桥臂电路包括第五电力半导体开关和第六电力半导体开关，所述第五电力半导体开关和第六电力半导体开关各自包括第一端、第二端和控制端且各自包括体二极管，且所述第五电力半导体开关和第六电力半导体开关的第二端连接并串联于所述三相供电电源的第三相中，所述操作方法包括：
    获取所述第一相桥臂电路的第一相电压的采样值、所述第二相桥臂电路的第二相电压的采样值和所述第三相桥臂电路的第三相电压的采样值；
    根据所述第一相电压的采样值和所述第二相电压的采样值确定所述第一相桥臂电路和所述第二相桥臂电路之间的线电压的方向，导通所述第一相桥臂电路中的其体二极管的方向与所述线电压的方向相同的一个电力半导体开关和所述第二相桥臂电路中的其体二极管的方向与所述线电压的方向相同的一个电力半导体开关；
    在所述线电压的紧接的过零之后的半个周波内，导通所述第一相桥臂电路中的另一个电力半导体开关以及所述第二相桥臂电路中的另一个电力半导体开关，并且在所述线电压的所述紧接的过零之后，根据所述第一相电压的采样值、所述第二相电压的采样值和所述第三相电压的采样值确定所述第三相桥臂电路两端的电压的方向，导通所述第三相桥臂电路中的其体二极管的方向与所述电压的方向相同的一个电力半导体开关；以及
    在所述第三相桥臂电路的两端的电压的紧接的过零之后的半个周波内，导通所述第三相桥臂电路中的另一个电力半导体开关。
  15. 根据权利要求14所述的操作方法，其中，确定所述线电压的方向包括：
    从所述第一相电压的最新预定数量个采样值和所述第二相电压的最新预 定数量个采样值导出所述线电压的最新预定数量个采样值，通过确定所述线电压的最新预定数量个采样值的平均值大于预定正阈值来确定所述线电压的方向为正方向，或者通过确定所述线电压的最新预定数量个采样值的平均值小于预定负阈值来确定所述线电压的方向为负方向。
  16. 根据权利要求14所述的操作方法，其中，确定所述第三相桥臂电路两端的电压的方向包括：
    从所述第一相电压的最新预定数量个采样值、所述第二相电压的最新预定数量个采样值和所述第三相电压的最新预定数量个采样值导出所述第三相桥臂电路两端的电压的最新预定数量个采样值，并通过确定所述第三相桥臂电路两端的电压的最新预定数量个采样值的平均值大于预定正阈值来确定第三相桥臂电路两端的电压的方向为正方向，或者通过确定所述第三相桥臂电路两端的电压的最新预定数量个采样值的平均值小于预定负阈值来确定第三相桥臂电路两端的电压的方向为负方向。
  17. 根据权利要求14所述的操作方法，其中，
    在确定所述线电压的方向为正方向之后，通过确定所述线电压的最新预定数量个采样值的平均值小于预定正阈值来确定所述线电压过零；
    在确定所述线电压的方向为负方向之后，通过确定所述线电压的最新预定数量个采样值的平均值大于预定负阈值来确定所述线电压过零。
  18. 根据权利要求16所述的操作方法，其中，
    在确定第三相桥臂电路两端的电压的方向为正方向之后，通过确定所述第三相桥臂电路两端的电压的最新预定数量个采样值的平均值小于所述预定正阈值来确定所述第三相桥臂电路两端的电压过零；
    在确定第三相桥臂电路两端的电压的方向为负方向之后，通过确定所述第三相桥臂电路两端的电压的最新预定数量个采样值的平均值大于所述预定负阈值来确定所述第三相桥臂电路两端的电压过零。
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CN114337332A (zh) * 2020-09-30 2022-04-12 重庆美的制冷设备有限公司 三相电源变换电路、电路控制方法、线路板及空调器

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