WO2023286860A1 - Corps lié en cuivre/céramique et carte de circuit imprimé isolée - Google Patents

Corps lié en cuivre/céramique et carte de circuit imprimé isolée Download PDF

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Publication number
WO2023286860A1
WO2023286860A1 PCT/JP2022/027876 JP2022027876W WO2023286860A1 WO 2023286860 A1 WO2023286860 A1 WO 2023286860A1 JP 2022027876 W JP2022027876 W JP 2022027876W WO 2023286860 A1 WO2023286860 A1 WO 2023286860A1
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Prior art keywords
copper
active metal
layer
thickness
region
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PCT/JP2022/027876
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English (en)
Japanese (ja)
Inventor
伸幸 寺▲崎▼
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三菱マテリアル株式会社
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Publication of WO2023286860A1 publication Critical patent/WO2023286860A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern

Definitions

  • the present invention provides a copper/ceramic bonded body in which a copper member made of copper or a copper alloy and a ceramic member are joined together, and an insulating circuit in which a copper plate made of copper or a copper alloy is joined to the surface of a ceramic substrate. It relates to substrates.
  • a power module, an LED module, and a thermoelectric module have a structure in which a power semiconductor element, an LED element, and a thermoelectric element are joined to an insulating circuit board in which a circuit layer made of a conductive material is formed on one side of an insulating layer.
  • power semiconductor elements for high power control used to control wind power generation, electric vehicles, hybrid vehicles, etc. generate a large amount of heat during operation.
  • Patent Document 1 proposes an insulated circuit board in which a circuit layer and a metal layer are formed by bonding copper plates to one side and the other side of a ceramic substrate.
  • copper plates are arranged on one surface and the other surface of a ceramic substrate with an Ag—Cu—Ti brazing material interposed therebetween, and the copper plates are joined by heat treatment (so-called active metal brazing method).
  • Patent Document 2 proposes a power module substrate in which a copper plate made of copper or a copper alloy and a ceramic substrate made of AlN or Al 2 O 3 are bonded using a bonding material containing Ag and Ti. ing. Furthermore, Patent Document 3 proposes a power module substrate in which a copper plate made of copper or a copper alloy and a ceramic substrate made of silicon nitride are bonded using a bonding material containing Ag and Ti. As described above, when a copper plate and a ceramic substrate are bonded using a bonding material containing Ti, Ti, which is an active metal, reacts with the ceramic substrate, thereby improving the wettability of the bonding material and the copper plate. The bonding strength with the ceramic substrate is improved.
  • the heat generation temperature of the semiconductor elements mounted on the insulated circuit board tends to be higher, and the insulated circuit board is required to have higher cooling/heating cycle reliability to withstand severe cooling/heating cycles.
  • Ti which is an active metal
  • an intermetallic compound containing Cu and Ti precipitates.
  • the vicinity of the joint interface becomes hard, cracks may occur in the ceramic member during thermal cycle loading, and there is a risk of deterioration in thermal cycle reliability.
  • the present invention has been made in view of the above-mentioned circumstances. It is an object of the present invention to provide an insulated circuit board made of this copper/ceramic bonded body.
  • the inventors of the present invention conducted intensive studies, and found that when a ceramic member and a copper member are joined using a joining material containing an active metal, the liquid phase generated during joining is The active metal is repelled from the central portion to the peripheral edge portion side, and a relatively large amount of active metal exists in the peripheral edge portion of the copper member. It was found that there is a tendency to be harder than the region. Then, the inventors have found that stress concentrates on the peripheral edge region of the hard copper member at the bonding interface during a thermal cycle load, and cracking of the ceramic member is likely to occur.
  • a copper/ceramic joined body is a copper member obtained by joining a copper member made of copper or a copper alloy and a ceramic member.
  • a ceramic bonded body wherein an active metal compound layer is formed on the ceramic member side at the bonding interface between the ceramic member and the copper member, and the active metal compound layer is formed on the ceramic member side of the copper member.
  • the copper/ceramic joined body has the copper member and the ceramic member, and the copper member and the ceramic member are joined together.
  • the maximum reaching distance LA from the active metal compound layer of the active metal diffusion region in the peripheral region of the copper member and the central portion of the copper member Since the maximum reachable distance LB from the active metal compound layer of the active metal diffusion region in the region is in the range of 20 ⁇ m or more and 80 ⁇ m or less, the ceramic member and the copper member are firmly bonded by the active metal. In addition, hardening of the bonding interface is suppressed.
  • the difference between the maximum reaching distance L A of the active metal diffusion region in the peripheral region of the copper member and the maximum reaching distance L B of the active metal diffusion region in the central region of the copper member is 10 ⁇ m or less. Therefore, it is possible to suppress the peripheral region of the copper member from becoming relatively hard at the joint interface, suppress the occurrence of cracks in the ceramic member under thermal cycle load, and have excellent thermal cycle reliability. .
  • the thickness t1A of the active metal compound layer formed in the peripheral region of the copper member and the thickness t1A formed in the central region of the copper member is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, and the thickness ratio t1A / t1B is in the range of 0.7 or more and 1.4 or less. is preferred.
  • the thickness t1A of the active metal compound layer formed in the peripheral region of the copper member and the thickness t1B of the active metal compound layer formed in the central region of the copper member are 0.05 ⁇ m.
  • the thickness is within the range of 1.2 ⁇ m or less, the ceramic member and the copper member are reliably and strongly bonded by the active metal, and hardening of the bonding interface is further suppressed. Further, since the thickness ratio t1A / t1B is within the range of 0.7 or more and 1.4 or less, there is a large difference in the hardness of the bonding interface between the peripheral region and the central region of the copper member. Therefore, it is possible to further suppress the occurrence of cracks in the ceramic member under thermal cycle load.
  • an Ag—Cu alloy layer is formed on the copper member side at the bonding interface between the ceramic member and the copper member, and the copper member
  • the thickness t2 A of the Ag--Cu alloy layer formed in the peripheral region of the and the thickness t2 B of the Ag--Cu alloy layer formed in the central region of the copper member are in the range of 1 ⁇ m or more and 30 ⁇ m or less. and the thickness ratio t2A / t2B is preferably in the range of 0.7 or more and 1.4 or less.
  • the thickness t2A of the Ag--Cu alloy layer formed in the peripheral region of the copper member and the thickness t2B of the Ag--Cu alloy layer formed in the central region of the copper member are 1 ⁇ m. Since the thickness is within the range of 30 ⁇ m or less, the Ag of the bonding material sufficiently reacts with the copper member, so that the ceramic member and the copper member are reliably and firmly bonded, and the bonding interface is further hardened. Suppressed. Since the thickness ratio t2A / t2B is in the range of 0.7 or more and 1.4 or less, there is a large difference in the hardness of the bonding interface between the peripheral region and the central region of the copper member. is not generated, and the occurrence of cracks in the ceramic member under thermal cycle load can be further suppressed.
  • An insulated circuit board is an insulated circuit board in which a copper plate made of copper or a copper alloy is bonded to a surface of a ceramic substrate, wherein the bonding interface between the ceramic substrate and the copper plate includes: An active metal compound layer is formed on the ceramic substrate side, and active metals (Ti, Zr, Nb, Hf) diffuse from the ceramic substrate side to the copper plate side on the ceramic substrate side of the copper plate.
  • an active metal diffusion region in which the concentration of the active metal in the copper plate is 0.5% by mass or more is formed, and from the active metal compound layer of the active metal diffusion region in the peripheral region of the copper plate and the maximum reachable distance LB of the active metal diffusion region from the active metal compound layer in the central region of the copper plate are within the range of 20 ⁇ m or more and 80 ⁇ m or less, and the copper plate
  • the difference between the maximum reaching distance L A of the active metal diffusion region in the peripheral region and the maximum reaching distance L B of the active metal diffusion region in the central region of the copper plate is 10 ⁇ m or less.
  • the insulating circuit board has the ceramic substrate and the copper plate, and the copper plate is joined to the surface of the ceramic substrate.
  • the maximum reaching distance LA from the active metal compound layer of the active metal diffusion region in the peripheral region of the copper plate and the active distance in the central region of the copper plate Since the maximum reachable distance L B of the metal diffusion region from the active metal compound layer is in the range of 20 ⁇ m or more and 80 ⁇ m or less, the ceramic substrate and the copper plate are firmly bonded by the active metal, and the bonding interface is hardening is suppressed.
  • the difference between the maximum reaching distance L A of the active metal diffusion region in the peripheral region of the copper plate and the maximum reaching distance L B of the active metal diffusion region in the central region of the copper plate is 10 ⁇ m or less. Therefore, it is possible to suppress the peripheral region of the copper plate from becoming relatively hard at the joint interface, suppress the occurrence of cracks in the ceramic substrate under thermal cycle loads, and have excellent thermal cycle reliability.
  • the thickness t1A of the active metal compound layer formed in the peripheral region of the copper plate and the active metal layer formed in the central region of the copper plate is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, and the thickness ratio t1A / t1B is in the range of 0.7 or more and 1.4 or less.
  • the thickness t1A of the active metal compound layer formed in the peripheral region of the copper plate and the thickness t1B of the active metal compound layer formed in the central region of the copper plate are 0.05 ⁇ m or more.
  • the thickness is within the range of 0.2 ⁇ m or less, the ceramic substrate and the copper plate are reliably and strongly bonded by the active metal, and hardening of the bonding interface is further suppressed. Further, since the thickness ratio t1A / t1B is within the range of 0.7 or more and 1.4 or less, there is a large difference in the hardness of the bonding interface between the peripheral region and the central region of the copper plate. Moreover, it is possible to further suppress the occurrence of cracks in the ceramic substrate under thermal cycle load.
  • an Ag—Cu alloy layer is formed on the side of the copper plate at the bonding interface between the ceramic substrate and the copper plate, and in the peripheral region of the copper plate.
  • the thickness t2 A of the Ag—Cu alloy layer formed and the thickness t2 B of the Ag—Cu alloy layer formed in the central region of the copper plate are in the range of 1 ⁇ m or more and 30 ⁇ m or less, and the thickness ratio It is preferable that t2A / t2B is in the range of 0.7 or more and 1.4 or less.
  • the thickness t2A of the Ag--Cu alloy layer formed in the peripheral region of the copper plate and the thickness t2B of the Ag--Cu alloy layer formed in the central region of the copper plate are 1 ⁇ m or more and 30 ⁇ m. Since it is within the following range, the Ag of the bonding material sufficiently reacts with the copper plate, and the ceramic substrate and the copper plate are reliably and strongly bonded, and hardening of the bonding interface is further suppressed. Since the thickness ratio t2A / t2B is in the range of 0.7 or more and 1.4 or less, there is a large difference in the hardness of the bonding interface between the peripheral region and the central region of the copper plate. In addition, it is possible to further suppress the occurrence of cracks in the ceramic substrate under a thermal cycle load.
  • a copper/ceramic joint that can suppress the occurrence of cracks in a ceramic member even when a severe thermal cycle is applied and has excellent thermal cycle reliability, and the copper/ceramic It is possible to provide an insulated circuit board made of a bonded body.
  • FIG. 1 is a schematic explanatory diagram of a power module using an insulated circuit board according to an embodiment of the present invention
  • FIG. FIG. 2 is an enlarged explanatory view of a bonding interface between a circuit layer and a metal layer of an insulated circuit board and a ceramic substrate according to an embodiment of the present invention
  • (a) is an explanatory diagram of the peripheral region and the central region of the circuit layer and the metal layer
  • (b) is the peripheral region
  • (c) is the central region.
  • 1 is a flowchart of a method for manufacturing an insulated circuit board according to an embodiment of the present invention
  • FIG. It is a schematic explanatory drawing of the manufacturing method of the insulation circuit board which concerns on embodiment of this invention.
  • FIG. 4 is an explanatory diagram of a bonding material disposing step in the method of manufacturing an insulated circuit board according to the embodiment of the present invention;
  • the copper/ceramic bonded body according to the present embodiment includes a ceramic substrate 11 as a ceramic member made of ceramics, and a copper plate 42 (circuit layer 12) and a copper plate 43 (metal layer 13) as copper members made of copper or a copper alloy. is an insulating circuit board 10 formed by bonding the .
  • FIG. 1 shows a power module 1 having an insulated circuit board 10 according to this embodiment.
  • This power module 1 includes an insulating circuit board 10 on which a circuit layer 12 and a metal layer 13 are arranged, and a semiconductor element 3 bonded to one surface (upper surface in FIG. 1) of the circuit layer 12 via a bonding layer 2. and a heat sink 5 arranged on the other side (lower side in FIG. 1) of the metal layer 13 .
  • the semiconductor element 3 is made of a semiconductor material such as Si.
  • the semiconductor element 3 and the circuit layer 12 are bonded via the bonding layer 2 .
  • the bonding layer 2 is made of, for example, a Sn--Ag-based, Sn--In-based, or Sn--Ag--Cu-based solder material.
  • the heat sink 5 is for dissipating heat from the insulating circuit board 10 described above.
  • the heat sink 5 is made of copper or a copper alloy, and is made of phosphorus-deoxidized copper in this embodiment.
  • the heat sink 5 is provided with a channel through which cooling fluid flows.
  • the heat sink 5 and the metal layer 13 are joined by a solder layer 7 made of a solder material.
  • the solder layer 7 is made of, for example, a Sn--Ag-based, Sn--In-based, or Sn--Ag--Cu-based solder material.
  • the insulating circuit board 10 of the present embodiment includes a ceramic substrate 11, a circuit layer 12 provided on one surface (upper surface in FIG. 1) of the ceramic substrate 11, and a ceramic substrate. and a metal layer 13 disposed on the other surface (lower surface in FIG. 1) of the substrate 11 .
  • the ceramics substrate 11 is made of ceramics such as silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), alumina (Al 2 O 3 ), etc., which are excellent in insulation and heat dissipation.
  • the ceramic substrate 11 is made of aluminum nitride (AlN), which has excellent heat dissipation properties.
  • the thickness of the ceramic substrate 11 is set within a range of, for example, 0.2 mm or more and 1.5 mm or less, and is set to 0.635 mm in this embodiment.
  • the circuit layer 12 is formed by bonding a copper plate 42 made of copper or a copper alloy to one surface (upper surface in FIG. 4) of the ceramic substrate 11. As shown in FIG. In this embodiment, the circuit layer 12 is formed by bonding a rolled plate of oxygen-free copper to the ceramic substrate 11 .
  • the thickness of the copper plate 42 that forms the circuit layer 12 is set within a range of 0.1 mm or more and 2.0 mm or less, and is set to 0.6 mm in this embodiment.
  • the metal layer 13 is formed by bonding a copper plate 43 made of copper or a copper alloy to the other surface of the ceramic substrate 11 (the lower surface in FIG. 4).
  • the metal layer 13 is formed by bonding a rolled plate of oxygen-free copper to the ceramic substrate 11 .
  • the thickness of the copper plate 43 that forms the metal layer 13 is set within a range of 0.1 mm or more and 2.0 mm or less, and is set to 0.6 mm in this embodiment.
  • an active metal compound layer 21 and an Ag—Cu alloy layer 22 are formed in order from the ceramic substrate 11 side at the bonding interface between the ceramic substrate 11, the circuit layer 12 and the metal layer 13. ing. It can also be said that the active metal compound layer 21 is part of the ceramic substrate 11 . It can also be said that the Ag—Cu alloy layer 22 is part of the circuit layer 12 and the metal layer 13 . Therefore, the bonding interface between the ceramic substrate 11 and the circuit layer 12 and metal layer 13 (copper plates 42 and 43) is the interface between the active metal compound layer 21 and the Ag--Cu alloy layer 22.
  • the bonding interface between the ceramic substrate 11 and the circuit layer 12 and the metal layer 13 is the active metal compound layer 21, the circuit layer 12 and the metal layer 13 (copper plate 42 , 43).
  • the active metal In the circuit layer 12 and the metal layer 13, the active metal (Ti in this embodiment) diffuses toward the circuit layer 12 and the metal layer 13 on the side of the bonding interface with the ceramic substrate 11, thereby forming a circuit.
  • An active metal diffusion region 23 is formed in which the active metal concentration in the layer 12 and the metal layer 13 is 0.5 mass % or more.
  • the interface structure between the peripheral region A and the central region B of the circuit layer 12 and the metal layer 13 is defined as follows.
  • the peripheral region A of the circuit layer 12 and the metal layer 13 is a cross section along the lamination direction of the circuit layer 12 and the metal layer 13 and the ceramic substrate 11. 2, the region extends from the widthwise end of the circuit layer 12 and the metal layer 13 to 200 ⁇ m further inward in the width direction from a position 20 ⁇ m inward from the widthwise end.
  • the central region B of the circuit layer 12 and the metal layer 13 is the circuit layer 12 in the cross section along the lamination direction of the circuit layer 12 and the metal layer 13 and the ceramic substrate 11. and a region of 200 ⁇ m in the width direction including the center of the metal layer 13 in the width direction.
  • the maximum The reaching distance LA is in the range of 20 ⁇ m or more and 80 ⁇ m or less.
  • the maximum reach from the active metal compound layer 21B of the active metal diffusion region 23B is The distance LB is within the range of 20 ⁇ m or more and 80 ⁇ m or less.
  • the maximum reaching distance LA of the active metal diffusion region 23A in the peripheral region A of the bonding interface between the ceramic substrate 11, the circuit layer 12, and the metal layer 13, the ceramic substrate 11, the circuit layer 12, and the The difference from the maximum reaching distance LB of the active metal diffusion region 23B in the central region B of the bonding interface with the metal layer 13 is 10 ⁇ m or less.
  • the thickness t1 A of the active metal compound layer 21A formed in the peripheral region A of the bonding interface between the ceramic substrate 11 and the circuit layer 12 and the metal layer 13, and the thickness t1 A of the ceramic substrate 11 and the circuit layer 13 is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, and the thickness ratio It is preferable that t1A / t1B is in the range of 0.7 or more and 1.4 or less.
  • the active metal compound layer 21 is a layer made of a compound of an active metal (at least one selected from Ti, Zr, Nb, and Hf) used in the bonding material 45.
  • FIG. More specifically, when the ceramic substrate is made of silicon nitride (Si 3 N 4 ) or aluminum nitride (AlN), the layer becomes a nitride of these active metals, and the ceramic substrate is made of alumina (Al 2 O 3 ), the layer consists of oxides of these active metals.
  • the active metal compound layers 21 (21A, 21B) are formed by aggregating active metal compound particles. The average particle size of these particles is 10 nm or more and 100 nm or less.
  • the active metal compound layers 21 (21A, 21B) are made of titanium nitride (TiN). Configured. That is, the active metal compound layers 21 (21A, 21B) are formed by aggregation of particles of titanium nitride (TiN) having an average particle diameter of 10 nm or more and 100 nm or less.
  • the ratio t2A / t2B to the thickness t2B of the Ag—Cu alloy layer 22B formed in the central region B of the bonding interface between the layer 12 and the metal layer 13 is in the range of 0.7 or more and 1.4 or less. preferably within.
  • the thickness of the Ag--Cu alloy layers 22 (22A, 22B) is preferably 1 ⁇ m or more and 30 ⁇ m or less.
  • FIG. 1 A method for manufacturing the insulated circuit board 10 according to the present embodiment will be described below with reference to FIGS. 3 and 4.
  • FIG. 1 A method for manufacturing the insulated circuit board 10 according to the present embodiment will be described below with reference to FIGS. 3 and 4.
  • a copper plate 42 to be the circuit layer 12 and a copper plate 43 to be the metal layer 13 are prepared. Then, a bonding material 45 is applied to the bonding surfaces of the copper plate 42 to be the circuit layer 12 and the copper plate 43 to be the metal layer 13 and dried.
  • the coating thickness of the paste-like bonding material 45 is preferably within the range of 10 ⁇ m or more and 50 ⁇ m or less after drying. In this embodiment, the paste bonding material 45 is applied by screen printing.
  • the bonding material 45 contains Ag and active metals (Ti, Zr, Nb, Hf).
  • an Ag--Ti based brazing material (Ag--Cu--Ti based brazing material) is used as the bonding material 45.
  • the Ag--Ti-based brazing material (Ag--Cu--Ti-based brazing material) contains, for example, 0% by mass or more and 45% by mass or less of Cu, and 0.5% by mass or more and 20% by mass of Ti, which is an active metal. It is preferable to use a composition having a content in the range of mass % or less, with the balance being Ag and unavoidable impurities.
  • the specific surface area of Ag powder contained in the bonding material 45 is preferably 0.15 m 2 /g or more, more preferably 0.25 m 2 /g or more, and more preferably 0.40 m 2 /g or more. is more preferred.
  • the specific surface area of the Ag powder contained in the bonding material 45 is preferably 1.40 m 2 /g or less, more preferably 1.00 m 2 /g or less, and 0.75 m 2 /g or less. is more preferable.
  • the particle size of the Ag powder contained in the paste-like bonding material 45 preferably has a D10 of 0.7 ⁇ m or more and 3.5 ⁇ m or less and a D100 of 4.5 ⁇ m or more and 23 ⁇ m or less. D10 is the particle size at which the cumulative frequency is 10% on a volume basis in the particle size distribution measured by a laser diffraction scattering particle size distribution measurement method, and D100 is the particle size at which the cumulative frequency is 100% on a volume basis. .
  • the bonding material 45 is applied so as to be thinner than the coating thickness of the bonding material 45B in the central portion of the copper plate 43 that becomes the metal layer 13 .
  • the difference between the coating thickness of the bonding material 45A in the peripheral edge portion of the copper plate 42 serving as the circuit layer 12 and the copper plate 43 serving as the metal layer 13 and the coating thickness of the bonding material 45B in the central portion is in the range of 5 ⁇ m or more and 15 ⁇ m or less. It is preferable to The peripheral portion to which the bonding material 45A is applied is a portion of the peripheral portion that includes the peripheral portion area and has an area of 1.5% to 10% of the surface area of the copper plates 42 and 43, and the maximum line width of the peripheral portion is 1 mm. is.
  • the central portion to which the bonding material 45B is applied is a central portion that includes the central region and has an area of 90% to 98.5% of the surface areas of the copper plates 42 and 43 .
  • a copper plate 42 to be the circuit layer 12 is laminated on one surface (upper surface in FIG. 4) of the ceramic substrate 11 with a bonding material 45 interposed therebetween, and on the other surface (lower surface in FIG. 4) of the ceramic substrate 11 , a copper plate 43 to be the metal layer 13 is laminated with a bonding material 45 interposed therebetween.
  • the heating temperature in the pressurizing and heating step S03 is preferably in the range of 800° C. or higher and 850° C. or lower.
  • the total temperature integral value in the heating step from 780° C. to the heating temperature and the holding step at the heating temperature is preferably within the range of 7° C. ⁇ h or more and 80° C. ⁇ h or less.
  • the pressure load in the pressurization and heating step S03 is preferably within the range of 0.029 MPa or more and 2.94 MPa or less.
  • the degree of vacuum in the pressurizing and heating step S03 is preferably in the range of 1 ⁇ 10 ⁇ 6 Pa or more and 5 ⁇ 10 ⁇ 2 Pa or less.
  • the cooling rate in this cooling step S04 is preferably within the range of 2° C./min or more and 20° C./min or less.
  • the cooling rate here is the cooling rate from the heating temperature to 780° C., which is the Ag—Cu eutectic temperature.
  • the insulated circuit board 10 of the present embodiment is manufactured through the bonding material disposing step S01, the laminating step S02, the pressurizing and heating step S03, and the cooling step S04.
  • Heat-sink bonding step S05 Next, the heat sink 5 is bonded to the other side of the metal layer 13 of the insulated circuit board 10 .
  • the insulating circuit board 10 and the heat sink 5 are laminated with a solder material interposed therebetween and placed in a heating furnace.
  • semiconductor element bonding step S06 Next, the semiconductor element 3 is soldered to one surface of the circuit layer 12 of the insulating circuit board 10 .
  • the power module 1 shown in FIG. 1 is produced by the above-described steps.
  • the active metal compound layer of the active metal diffusion region 23A in the peripheral region A of the circuit layer 12 and the metal layer 13 The maximum reaching distance L A from 21A and the maximum reaching distance L B of the active metal diffusion region 23B in the central region B of the circuit layer 12 and the metal layer 13 from the active metal compound layer 21B are within a range of 20 ⁇ m or more and 80 ⁇ m or less. Therefore, the ceramic substrate 11, the circuit layer 12, and the metal layer 13 are strongly bonded by the active metal, and hardening of the bonded interface is suppressed.
  • the maximum thickness of the active metal compound layers 21 (21A, 21B) in the active metal diffusion regions 23 (23A, 23B) is increased.
  • the reaching distances L A and L B are preferably 25 ⁇ m or more, more preferably 35 ⁇ m or more.
  • the maximum reaching distance L A of the active metal diffusion regions 23 (23A, 23B) from the active metal compound layers 21 (21A, 21B), LB is preferably 75 ⁇ m or less, more preferably 65 ⁇ m or less.
  • the maximum reaching distance LA of the active metal diffusion region 23A in the peripheral region A of the circuit layer 12 and the metal layer 13 and the maximum reaching distance of the active metal diffusion region 23B in the central region B of the circuit layer 12 and the metal layer 13 Since the difference from LB is set to 10 ⁇ m or less, it is possible to suppress the peripheral edge region A of the circuit layer 12 and the metal layer 13 from becoming relatively hard at the bonding interface, and the ceramic substrate 11 under thermal cycle load. Cracking can be suppressed, and the thermal cycle reliability is excellent.
  • the maximum reaching distance L A of the active metal diffusion region 23A in the peripheral region A of the circuit layer 12 and the metal layer 13 and the central portion of the circuit layer 12 and the metal layer 13 is preferably 8 ⁇ m or less, more preferably 6 ⁇ m or less.
  • the thickness t1 A of the active metal compound layer 21A formed in the peripheral region A of the circuit layer 12 and the metal layer 13 and the thickness t1A formed in the central region B of the circuit layer 12 and the metal layer 13 When the thickness t1B of the applied active metal compound layer 21B is in the range of 0.05 ⁇ m or more and 1.2 ⁇ m or less, the ceramic substrate 11, the circuit layer 12 and the metal layer 13 are reliably bonded by the active metal. In addition, hardening of the bonding interface is further suppressed.
  • the thickness t1 of the active metal compound layer 21A formed in the peripheral region A of the circuit layer 12 and the metal layer 13 , and the thickness t1B of the active metal compound layer 21B formed in the central region B of the circuit layer 12 and the metal layer 13 is preferably 0.08 ⁇ m or more, more preferably 0.15 ⁇ m or more. preferable.
  • the thickness t1 A of the active metal compound layer 21A formed in the peripheral region A of the circuit layer 12 and the metal layer 13 and the thickness t1 A of the circuit layer 12 and the thickness t1B of the active metal compound layer 21B formed in the central region B of the metal layer 13 is preferably 1.0 ⁇ m or less, more preferably 0.6 ⁇ m or less.
  • the thickness t1 A of the active metal compound layer 21A formed in the peripheral region A of the circuit layer 12 and the metal layer 13 and the thickness t1 A formed in the central region B of the circuit layer 12 and the metal layer 13 When the ratio t1A / t1B of the thickness t1B of the active metal compound layer 21B is in the range of 0.7 or more and 1.4 or less, the peripheral edge portions of the circuit layer 12 and the metal layer 13 There is no large difference in the hardness of the bonding interface between the region A and the central region B, and cracking of the ceramic substrate 11 under thermal cycle load can be further suppressed.
  • the thickness t1 A of the active metal compound layer 21A formed in the peripheral region A of the circuit layer 12 and the metal layer 13, and , the ratio t1A / t1B of the thickness t1B of the active metal compound layer 21B formed in the central region B of the circuit layer 12 and the metal layer 13 is in the range of 0.8 or more and 1.2 or less. is more preferable, and more preferably within the range of 0.9 or more and 1.1 or less.
  • the thickness t2 A of the Ag—Cu alloy layer 22A formed in the peripheral region A of the circuit layer 12 and the metal layer 13, and the thickness t2 A of the central region B of the circuit layer 12 and the metal layer 13 When the thickness t2B of the formed Ag—Cu alloy layer 22B is in the range of 1 ⁇ m or more and 30 ⁇ m or less, the Ag of the bonding material 45, which will be described later, and the circuit layer 12 and the metal layer 13 are sufficiently As a result, the ceramic substrate 11, the circuit layer 12 and the metal layer 13 are reliably and strongly bonded together, and hardening of the bonding interface is further suppressed.
  • the thickness t2 A and the thickness t2B of the Ag—Cu alloy layer 22B formed in the central region B of the circuit layer 12 and the metal layer 13 are preferably 3 ⁇ m or more, more preferably 5 ⁇ m or more. Further, in order to further suppress the joining interface from becoming harder than necessary, the thickness t2 A of the Ag—Cu alloy layer 22A formed in the peripheral region A of the circuit layer 12 and the metal layer 13 and the circuit The thickness t2B of the Ag—Cu alloy layer 22B formed in the central region B of the layer 12 and the metal layer 13 is preferably 25 ⁇ m or less, more preferably 15 ⁇ m or less.
  • the thickness t2A of the Ag—Cu alloy layer 22A formed in the peripheral region A of the circuit layer 12 and the metal layer 13 and the thickness t2A formed in the central region B of the circuit layer 12 and the metal layer 13 When the ratio t2A / t2B to the thickness t2B of the Ag--Cu alloy layer 22B is within the range of 0.7 or more and 1.4 or less, the circuit layer 12 and the metal layer 13 There is no large difference in the hardness of the joint interface between the peripheral edge region A and the central region B, and cracking of the ceramic substrate under thermal cycle load can be further suppressed.
  • the Ag—Cu alloy layer 22A formed in the peripheral region A of the circuit layer 12 and the metal layer 13 has a thickness t2 A and , the ratio t2A / t2B of the thickness t2B of the Ag—Cu alloy layer 22B formed in the central region B of the circuit layer 12 and the metal layer 13 is within the range of 0.8 or more and 1.2 or less. It is more preferable to make it within the range of 0.9 or more and 1.1 or less.
  • a power module is configured by mounting a semiconductor element on an insulated circuit board, but the present invention is not limited to this.
  • an LED module may be configured by mounting an LED element on the circuit layer of the insulating circuit board, or a thermoelectric module may be configured by mounting a thermoelectric element on the circuit layer of the insulating circuit board.
  • the ceramic substrate is made of aluminum nitride ( AlN).
  • other ceramic substrates such as silicon nitride (Si 3 N 4 ) may be used.
  • Ti was used as an example of the active metal contained in the bonding material. It suffices if it contains the above active metals. These active metals may be contained as hydrides.
  • the bonding material to be applied at the periphery and center of the copper plate are different to control the maximum reach L A of the active metal diffusion region in the peripheral region of the circuit layer and the metal layer and the maximum reach L B of the active metal diffusion region in the central region of the circuit layer and the metal layer.
  • the specific surface area (BET value) of Ag powder contained in the bonding material it is possible to control the aforementioned maximum reaching distance. That is, when the specific surface area of the Ag powder is small, the sinterability of the paste-like bonding material becomes high, the liquid phase is likely to occur in the pressurization and heating process, the diffusion of the active metal is promoted, and the maximum reach distance described above is increased. becomes longer. On the other hand, when the specific surface area of the Ag powder is large, the sinterability of the paste-like bonding material becomes low, making it difficult to generate a liquid phase in the pressurization and heating processes, suppressing the diffusion of the active metal, and increasing the maximum reach distance described above. becomes shorter.
  • bonding materials containing different types and amounts of active metals may be used to separately paint the peripheral edge portion and the central portion of the copper plate.
  • the circuit layer was described as being formed by bonding a rolled plate of oxygen-free copper to a ceramic substrate, but the present invention is not limited to this, and a copper piece punched out of a copper plate is used.
  • a circuit layer may be formed by bonding to a ceramic substrate while being arranged in a circuit pattern. In this case, each copper piece should have the interface structure with the ceramic substrate as described above.
  • the bonding material is provided on the bonding surface of the copper plate, but the present invention is not limited to this, and the bonding material may be provided between the ceramic substrate and the copper plate. Alternatively, a bonding material may be provided on the bonding surface of the ceramic substrate.
  • a ceramic substrate (40 mm ⁇ 40 mm) shown in Table 1 was prepared.
  • the thickness of AlN and Al 2 O 3 was 0.635 mm, and the thickness of Si 3 N 4 was 0.32 mm.
  • a copper plate made of oxygen-free copper and having a thickness of 37 mm ⁇ 37 mm and having a thickness shown in Table 1 was prepared as a copper plate serving as a circuit layer and a metal layer.
  • a bonding material containing Ag powder having a BET value shown in Table 1 was applied to the peripheral portion of the copper plate serving as the circuit layer and the metal layer so that the target thickness after drying would be the value shown in Table 1.
  • a bonding material containing Ag powder having a BET value shown in Table 1 was applied to the central portion of the copper plate serving as the circuit layer and the metal layer so that the target thickness after drying would be the value shown in Table 1.
  • a paste material was used as the bonding material, and the amounts of Ag, Cu, and active metal were as shown in Table 1.
  • the BET value (specific surface area) of the Ag powder was measured by using AUTOSORB-1 manufactured by QUANTACHRROME, vacuum deaeration by heating at 150 ° C. for 30 minutes as pretreatment, N 2 adsorption, liquid nitrogen 77 K, BET multipoint method. It was measured.
  • a copper plate which will be the circuit layer, is laminated on one side of the ceramic substrate.
  • a copper plate serving as a metal layer was laminated on the other surface of the ceramic substrate.
  • This laminate was heated while being pressed in the lamination direction to generate an Ag—Cu liquid phase.
  • the pressure load was set to 0.294 MPa, and the temperature integral value was set as shown in Table 2. Then, by cooling the heated laminate, the copper plate serving as the circuit layer, the ceramic substrate, and the metal plate serving as the metal layer were bonded to obtain an insulated circuit substrate (copper/ceramic bonded body).
  • the active metal diffusion region, active metal compound layer, Ag-Cu alloy layer, and thermal cycle reliability were evaluated as follows.
  • Comparative Example 1 the difference between the maximum reaching distance LA of the active metal diffusion region in the peripheral region of the copper plate and the maximum reaching distance LB of the active metal diffusion region in the central region of the copper plate was set to 15 ⁇ m. , the maximum reaching distance LA of the active metal diffusion region in the peripheral region of the copper plate is set to 12 ⁇ m, and the number of cracks generated is 200 times in the thermal cycle test.
  • Comparative Example 2 the maximum reaching distance L A of the active metal diffusion region in the peripheral region of the copper plate is 16 ⁇ m, and the maximum reaching distance LB of the active metal diffusion region in the central region of the copper plate is 19 ⁇ m. In the cycle test, cracks occurred 150 times.
  • the maximum reaching distance L A from the active metal compound layer of the active metal diffusion region in the peripheral region of the copper plate and the active metal diffusion region in the central region of the copper plate is set to be in the range of 20 ⁇ m or more and 80 ⁇ m or less, and the difference between the maximum reaching distance LA and the maximum reaching distance LB is set to 10 ⁇ m or less.
  • the number of times cracks occurred was 300 to 500, indicating excellent thermal cycle reliability.
  • inventive examples 4 to 6 using Si 3 N 4 as the ceramic substrate and comparative examples 3 and 4 are compared.
  • the maximum reaching distance L A of the active metal diffusion region in the peripheral region of the copper plate was 108 ⁇ m
  • the maximum reaching distance LB of the active metal diffusion region in the central region of the copper plate was 102 ⁇ m.
  • the cycle test cracks occurred 1200 times.
  • the difference between the maximum reaching distance LA of the active metal diffusion region in the peripheral region of the copper plate and the maximum reaching distance LB of the active metal diffusion region in the central region of the copper plate was 14 ⁇ m.
  • the maximum reaching distance L A from the active metal compound layer of the active metal diffusion region in the peripheral region of the copper plate and the active metal diffusion region in the central region of the copper plate is set to be in the range of 20 ⁇ m or more and 80 ⁇ m or less, and the difference between the maximum reaching distance LA and the maximum reaching distance LB is set to 10 ⁇ m or less.
  • the number of times cracks occurred exceeded 1,600 to 2,000 times, indicating excellent thermal cycle reliability.
  • inventive examples 7 and 8 using Al 2 O 3 as the ceramic substrate and comparative example 5 are compared.
  • the maximum reaching distance L A of the active metal diffusion region in the peripheral region of the copper plate was 16 ⁇ m
  • the maximum reaching distance LB of the active metal diffusion region in the central region of the copper plate was 18 ⁇ m. In the test, cracks occurred 50 times.
  • the maximum reaching distance L A from the active metal compound layer of the active metal diffusion region in the peripheral region of the copper plate and the active metal diffusion region in the central region of the copper plate is set to be in the range of 20 ⁇ m or more and 80 ⁇ m or less, and the difference between the maximum reaching distance LA and the maximum reaching distance LB is set to 10 ⁇ m or less.
  • the number of times cracks occurred was 350 to 450, indicating excellent thermal cycle reliability.
  • the copper/ceramic bonded body and insulating circuit board of this embodiment are suitably applied to power modules, LED modules and thermoelectric modules.
  • Insulated circuit board (copper/ceramic joint) 11 Ceramic substrate (ceramic member) 12 circuit layer (copper member) 13 metal layer (copper member) 21 (21A, 21B) active metal compound layer 22 (22A, 22B) Ag—Cu alloy layer 23 (23A, 23B) active metal diffusion region

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

Ce corps lié en cuivre/céramique (10) comprend un élément en céramique (11) et des éléments en cuivre (12, 13) qui sont formés de cuivre ou d'un alliage de cuivre ; les éléments en cuivre (12, 13) et l'élément en céramique (11) sont liés les uns aux autres ; au niveau des interfaces de liaison entre l'élément en céramique (11) et les éléments en cuivre (12, 13), une couche de composé métallique actif (21) est formée sur le côté de l'élément en céramique (11) de chaque interface de liaison ; une région active de diffusion de métal (23), qui a une concentration en métal actif de 0,5 % en masse ou plus, est formée sur le côté de l'élément en céramique (11) de chaque élément en cuivre (12, 13) ; la distance maximale de portée LA d'une région active de diffusion de métal (23A) dans une région périphérique (A) et la distance maximale de portée LB d'une région active de diffusion de métal (23B) dans une région centrale (B) sont comprises dans la plage de 20 µm à 80 µm ; et la différence entre la distance maximale de portée LA et la distance maximale de portée LB est de 10 µm ou moins.
PCT/JP2022/027876 2021-07-16 2022-07-15 Corps lié en cuivre/céramique et carte de circuit imprimé isolée WO2023286860A1 (fr)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH104156A (ja) * 1996-06-14 1998-01-06 Mitsubishi Electric Corp 半導体装置用絶縁基板及び半導体装置
JP2003055058A (ja) * 2001-08-23 2003-02-26 Denki Kagaku Kogyo Kk セラミック体と銅板の接合方法
JP2008311296A (ja) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp パワーモジュール用基板
WO2015019602A1 (fr) * 2013-08-08 2015-02-12 株式会社 東芝 Substrat de circuit et dispositif semi-conducteur
JP2015092552A (ja) * 2013-09-30 2015-05-14 三菱マテリアル株式会社 Ｃｕ／セラミックス接合体、Ｃｕ／セラミックス接合体の製造方法、及び、パワーモジュール用基板
JP2016169111A (ja) * 2015-03-11 2016-09-23 デンカ株式会社 セラミックス回路基板
WO2017213207A1 (fr) * 2016-06-10 2017-12-14 田中貴金属工業株式会社 Carte de circuit imprimé en céramique et procédé de fabrication d'une telle carte
JP2020053580A (ja) * 2018-09-27 2020-04-02 京セラ株式会社 パワーモジュール用基板およびパワーモジュール

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH104156A (ja) * 1996-06-14 1998-01-06 Mitsubishi Electric Corp 半導体装置用絶縁基板及び半導体装置
JP2003055058A (ja) * 2001-08-23 2003-02-26 Denki Kagaku Kogyo Kk セラミック体と銅板の接合方法
JP2008311296A (ja) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp パワーモジュール用基板
WO2015019602A1 (fr) * 2013-08-08 2015-02-12 株式会社 東芝 Substrat de circuit et dispositif semi-conducteur
JP2015092552A (ja) * 2013-09-30 2015-05-14 三菱マテリアル株式会社 Ｃｕ／セラミックス接合体、Ｃｕ／セラミックス接合体の製造方法、及び、パワーモジュール用基板
JP2016169111A (ja) * 2015-03-11 2016-09-23 デンカ株式会社 セラミックス回路基板
WO2017213207A1 (fr) * 2016-06-10 2017-12-14 田中貴金属工業株式会社 Carte de circuit imprimé en céramique et procédé de fabrication d'une telle carte
JP2020053580A (ja) * 2018-09-27 2020-04-02 京セラ株式会社 パワーモジュール用基板およびパワーモジュール

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