WO2023286369A1 - Vacuum processing device - Google Patents

Vacuum processing device Download PDF

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Publication number
WO2023286369A1
WO2023286369A1 PCT/JP2022/012560 JP2022012560W WO2023286369A1 WO 2023286369 A1 WO2023286369 A1 WO 2023286369A1 JP 2022012560 W JP2022012560 W JP 2022012560W WO 2023286369 A1 WO2023286369 A1 WO 2023286369A1
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Prior art keywords
stage
vacuum
vacuum chamber
substrate
posture
Prior art date
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PCT/JP2022/012560
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French (fr)
Japanese (ja)
Inventor
弘敏 阪上
僚也 北沢
辰徳 磯部
Original Assignee
株式会社アルバック
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Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to CN202280011677.8A priority Critical patent/CN116745458A/en
Priority to KR1020237041018A priority patent/KR20240004704A/en
Priority to JP2023535127A priority patent/JPWO2023286369A1/ja
Publication of WO2023286369A1 publication Critical patent/WO2023286369A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus for performing a predetermined process on a substrate to be processed in a vacuum atmosphere.
  • This type of vacuum processing apparatus is used to perform various types of vacuum processing such as film formation processing by sputtering, vacuum deposition, or CVD, dry etching, ion implantation, and heat treatment on a substrate to be processed in a vacuum atmosphere.
  • a sputtering apparatus for performing a film forming process on a large-sized glass substrate by a sputtering method is equipped with a vacuum chamber, and the vacuum chamber has a vacuum pump for evacuating the inside thereof.
  • a stage is provided which is connected and on which a substrate to be processed is set in the vacuum chamber.
  • the stage is provided with a rotation axis, and has a horizontal posture (first posture) in which the main surface of the stage on which the substrate to be processed is set faces vertically upward, and a main surface of the stage on which the substrate to be processed is set is in the horizontal direction.
  • the stage is configured to be swingable around the rotation axis between a standing posture (second posture) facing the A sputtering cathode unit as a processing unit is arranged on the wall surface of the vacuum chamber so as to face the main surface of the stage in the upright posture (see, for example, Patent Document 1).
  • cycle venting As one method for removing particles, so-called cycle venting is generally known, in which an atmospheric atmosphere and a vacuum atmosphere of a predetermined pressure are alternately repeated multiple times in a vacuum chamber. According to this, when a vent gas such as nitrogen gas or argon gas is introduced into a vacuum chamber having a vacuum atmosphere, particles adhering to the main surface of the stage or the like are stirred up, and then the inside of the vacuum chamber is evacuated by a vacuum pump. Particles can be removed as much as possible by transferring the particles that are stirred up to the vacuum pump when exhausting.
  • a vent gas such as nitrogen gas or argon gas
  • Such a cycle vent for example, as in a vacuum processing apparatus used in the manufacturing process of a semiconductor device, requires a relatively small size of a substrate (silicon wafer) to be processed, thereby greatly increasing the volume of the vacuum chamber.
  • a substrate silicon wafer
  • the volume inside the vacuum chamber must be increased. particles cannot be eliminated.
  • the volume of the vacuum chamber is large, it takes a long time to perform the venting process to return the inside of the vacuum chamber to the atmosphere and the exhaust process to create a vacuum atmosphere with a predetermined pressure, which impairs productivity. problem arises.
  • the vacuum processing apparatus of the present invention has a vacuum chamber in which a processing unit for performing a predetermined processing on a substrate to be processed in a vacuum atmosphere is installed, and the inside of the vacuum chamber is evacuated.
  • a stage is provided in which a vacuum pump for exhausting air is connected and a substrate to be processed is set in a vacuum chamber.
  • a blowing means for blowing an inert gas toward the stage is further provided inside, and the blowing means can blow away particles adhering to at least one of the stage and the substrate to be processed while the inside of the vacuum chamber is in a vacuum atmosphere of a predetermined pressure. and a second flow rate that enables transfer of particles diffused in the vacuum chamber by blowing away to the vacuum pump.
  • the vacuum pump is operated.
  • the inside of the vacuum chamber is evacuated to a predetermined pressure range (for example, a range of 5 Pa to 1000 Pa) in the viscous flow region.
  • a predetermined pressure range for example, a range of 5 Pa to 1000 Pa
  • the inert gas such as nitrogen gas or argon gas is blown onto the stage at a first flow rate by the blowing means while the stage is in the second posture.
  • the first flow rate is set to, for example, a range of 1 SLM to 100 SLM, preferably a flow rate of 10 SLM or more, and at this time, the effective pumping speed of the vacuum pump is appropriately set so that the pressure in the vacuum chamber is maintained within the above range. be done.
  • the spraying time of the inert gas at the first flow rate can be experimentally determined in advance or calculated by simulation, for example.
  • the inert gas at the first flow rate can be blown onto the stage after the inside of the vacuum chamber is evacuated to a high vacuum (for example, 10 ⁇ 5 Pa) by a vacuum pump. It is also possible to perform vacuum processing while the substrate to be processed is set on the stage. As a result, the particles adhering to the stage and the substrate to be processed are blown off and blown up into a state of being diffused in the vacuum chamber (particle flying process).
  • the spraying means switches from the first flow rate to the second flow rate to introduce the inert gas into the vacuum chamber.
  • the second flow rate is set to a flow rate in the range of, for example, 300 sccm to 1000 sccm according to the size of the particles that are blown up.
  • the effective pumping speed of the vacuum pump is appropriately set.
  • the particles diffused in the vacuum chamber are guided to the exhaust port of the vacuum chamber that communicates with the vacuum pump and transferred to the vacuum pump (particle transfer step).
  • the spraying time of the inert gas at the second flow rate can be experimentally determined in advance or calculated by simulation, for example, in the same manner as described above. In addition, you may make it repeat a dance process and a transfer process several times one by one.
  • a relatively large amount (first flow rate) of inert gas is blown to stir up particles adhering to the stage or the like, and the lifted particles are removed. Furthermore, by introducing a relatively small amount of inert gas (second flow rate) and guiding it to the exhaust port so as not to adhere to the stage, etc., the particles brought in can be removed while maintaining the vacuum atmosphere in the vacuum chamber. can be eliminated. Moreover, since it is not necessary to repeat the venting process and the exhausting process for returning the inside of the vacuum chamber to the atmospheric atmosphere, the time required for removing particles can be shortened, which is advantageous when the volume inside the vacuum chamber is large. In addition, since the inert gas is used, when the substrate to be processed is set on the stage in the second posture, the stage is swung to the first posture in this state, and the vacuum processing is performed, prior to the vacuum processing, You can also remove particles with
  • the spraying means includes a spray nozzle disposed parallel to the rotation axis above the stage in the vacuum chamber and having a length equal to or greater than the width of the stage along the rotation axis, and the stage A configuration may be adopted in which the inert gas is sprayed in a line from the spray nozzle at the first flow rate while the is swung between the first posture and the second posture. According to this, by utilizing the oscillation of the stage, the inert gas can be blown over the entire main surface of the stage on which the substrate to be processed is set. can be done.
  • the spraying means includes a spray nozzle disposed above the stage in the vacuum chamber parallel to the rotation axis and having a length equal to or greater than the width of the stage along the rotation axis.
  • a configuration having a drive source for swinging the nozzle hole of the spray nozzle about another rotation axis parallel to the rotation axis may be employed.
  • the inert gas can be blown over the entire main surface of the stage on which the substrate to be processed is set.
  • By swinging the nozzle hole of the spray nozzle it is possible to more reliably guide the blown up particles to the exhaust port, which is advantageous.
  • the exhaust port of the vacuum chamber to which the exhaust pipe from the vacuum pump is connected is located below the stage, gravity will also be applied, and the particles that have been stirred up will be more reliably exhausted. You can lead it to your mouth.
  • FIG. 1 is a schematic cross-sectional view of a vacuum processing apparatus (sputtering apparatus) of this embodiment; FIG. The front view explaining a spray nozzle.
  • the process in a vacuum atmosphere is a film forming process by a sputtering method
  • the processing unit is a sputtering cathode
  • the substrate to be processed is a glass substrate (hereinafter referred to as "substrate Sw").
  • substrate Sw glass substrate
  • An embodiment of the vacuum processing apparatus of the present invention will be described taking as an example the case of forming a predetermined thin film on one surface of the substrate Sw in the chamber.
  • terms indicating directions such as up and down are based on FIG. 1 showing the installation posture of the vacuum processing apparatus.
  • a vacuum processing apparatus (sputtering apparatus) VM includes a substantially box-shaped main chamber 1 .
  • the upper wall portion of the main chamber 1 positioned vertically upward has a curved shape corresponding to the swing of the stage in order to minimize the volume thereof while allowing the swing of the stage, which will be described later.
  • An auxiliary chamber 2 is connected to one side wall of the main chamber 1 (left side wall in FIG. 1) and can communicate with each other through an opening 11 provided in one side wall of the main chamber 1 .
  • the other side wall portion of the main chamber 1 (the right side wall portion in FIG. 1) is provided with an opening 13 for substrate transfer that can be opened and closed by a shutter plate 12, and the substrate Sw is taken in and out of the main chamber 1 through the opening 13. It is free.
  • an exhaust port 14 is formed in the bottom wall portion of the main chamber 1 located vertically downward, and an exhaust pipe 15a from a vacuum pump 15 is connected to the exhaust port 14, so that the inside of the main chamber 1 is removed from the atmospheric pressure. It can be evacuated to a high vacuum region.
  • an exhaust port 14 is provided below a spray nozzle, which will be described later, and a conductance valve 15b is interposed in the exhaust pipe 15a so as to adjust the effective exhaust speed of the vacuum pump 15.
  • a stage 3 is provided in the main chamber 1 so as to be capable of swinging while holding the substrate Sw.
  • the stage 3 includes a support plate portion 31 having a functional part that has an area one size larger than the substrate Sw and holds the substrate Sw.
  • the functional parts although not shown and described, known parts such as claws provided on the outer peripheral edge of the upper surface of the support plate portion 31 and mechanical clamps can be used.
  • An arm portion 32 extending obliquely downward is attached to one side end of the lower surface of the support plate portion 31 located on the auxiliary chamber 2 side, and the lower end of the arm portion 32 is pivotally supported in the main chamber 1 so as to extend horizontally. It is connected to the rotating shaft portion 33 that is connected to the One end (depth direction in FIG.
  • the rotating shaft portion 33 is connected to an output shaft of a motor 34 as a driving means.
  • the main surface of the support plate portion 31 of the stage 3 that holds the substrate Sw faces upward in the vertical direction
  • the outer peripheral edge portion of the support plate portion 31 faces the opening 11 .
  • the stage 3 is allowed to swing between a second position in which it abuts against the inner surface of one side wall of the main chamber 1 positioned at the outer peripheral edge.
  • a sputtering cathode 4 as a processing unit is provided in the auxiliary chamber 2 .
  • the sputtering cathode 4 includes a target 41 that faces the stage 3 in the second posture, and is installed in the auxiliary chamber 2 via a backing plate 42 bonded to one surface of the target 41 .
  • the auxiliary chamber 2 is also connected to a vacuum pump, and a rare gas such as argon gas is introduced into the vacuum chamber 1 when plasma is formed, and a gas is introduced during reactive sputtering. of reaction gas can be introduced.
  • a predetermined power or AC power having a negative potential depending on the type of the target is applied to the target 41 from a sputtering power supply (not shown), plasma is formed in the auxiliary chamber 2, the target 41 is sputtered, and the surface of the substrate Sw is sputtered.
  • a predetermined thin film can be formed on the substrate.
  • a blowing means 5 for blowing an inert gas toward the stage 3 is provided.
  • the spray means 5 includes a spray nozzle 51 provided on the inner surface of the upper wall portion of the main chamber 1 .
  • the spray nozzle 51 is composed of a metal cylinder longer than the width of the support plate portion 31 of the stage 3 (the width in the depth direction in FIG. 1), and a plurality of spray nozzles 51 are spaced apart in one direction on the outer peripheral surface thereof.
  • nozzle holes 51a are arranged in a row, and the inert gas can be blown out in a line form from each nozzle hole 51a.
  • a gas pipe 52 is connected to the spray nozzle 51 so as to extend through the upper wall of the main chamber 1 and protrude inside.
  • a diffusion plate is placed in the spray nozzle 51 so as to diffuse the inert gas supplied through the gas pipe 52 so that the inert gas is blown out substantially uniformly from each nozzle hole 51a.
  • a gas pipe 52 communicates with a gas source (not shown) via a flow control valve 53 .
  • a rare gas such as nitrogen gas or argon gas is used as the inert gas.
  • Inert gas can be supplied to the spray nozzle 51 by switching the second flow rate that can diffuse the particles in the main chamber 1 and send them to the exhaust port 14 .
  • the spray nozzle 51 is also connected to a rotary shaft of a motor 54 as a drive source for rotating about its axis (rotational axis).
  • the hole 51a can be reciprocated around the axis within a predetermined angular range. The procedure for removing particles after maintenance is described below.
  • the vacuum pump 15 evacuates the main chamber 1 and the auxiliary chamber 2 to a predetermined pressure range (for example, 5 Pa to 1000 Pa) in the viscous flow region while the stage 3 is in the second posture.
  • a predetermined pressure range for example, 5 Pa to 1000 Pa
  • the flow rate control valve 53 is controlled to supply the inert gas at the first flow rate to the spray nozzle 51, and the inert gas at the first flow rate is linearly supplied from each nozzle hole 51a. Blow out.
  • the first flow rate is set to, for example, a range of 1 SLM to 100 SLM, preferably a flow rate of 10 SLM or more, and the opening of the conductance valve 15b is adjusted appropriately so that the pressure in the main chamber 1 is maintained within the above range. be done.
  • the motor 54 rotates the spray nozzle 51 so as to reciprocate within a predetermined angular range, and swings the stage 3 until it reaches the first posture.
  • the spraying time of the inert gas at the first flow rate can be experimentally determined in advance or calculated by simulation, and the swing speed of the stage 3 is set accordingly.
  • the inert gas can be blown onto the stage 3 at the first flow rate after the main chamber 1 and the auxiliary chamber 2 are evacuated to a high vacuum (eg, 10 ⁇ 5 Pa) by the vacuum pump 15.
  • a high vacuum eg, 10 ⁇ 5 Pa
  • the film formation on the substrate Sw can be performed while the substrate Sw is set on the stage 3 .
  • the stage 3 takes the first posture, and when the particles adhering to the stage 3 and the substrate Sw are finished stirring up, the first posture of the stage 3 is maintained (that is, the main chamber 1 and the auxiliary chamber 2 are isolated from each other).
  • the flow rate control valve 53 is controlled to supply the inert gas to the spray nozzle 51 at the second flow rate while maintaining the rotation of the spray nozzle 51, and the inert gas is supplied from each nozzle hole 51a.
  • the active gas is blown out in a line at a second flow rate.
  • the second flow rate is set, for example, to a flow rate in the range of 300 sccm to 1000 sccm according to the size of the particles that are blown up, and at this time, the inside of the main chamber 1 is maintained within the pressure range as described above. Then, the opening degree of the conductance valve 15b is appropriately adjusted. As a result, the particles that have diffused into the main chamber 1 are guided to the exhaust port 14 by gravity and transferred to the vacuum pump 15 (particle transfer step).
  • the spraying time of the inert gas at the second flow rate can be experimentally determined in advance or calculated by simulation, for example, in the same manner as described above. In addition, such a dancing process and a transfer process can be sequentially repeated a plurality of times. You may make it blow gas.
  • a relatively large amount (first flow rate) of inert gas is blown to stir up particles adhering to the stage 3 and the like so that the stirred up particles do not further adhere to the stage 3 and the like.
  • second flow rate the vacuum atmosphere in the main chamber 1 is maintained while the particles brought in are discharged as much as possible. can be done.
  • the time required for removing particles can be shortened, which is advantageous when the volume inside the main chamber 1 is large.
  • the substrate Sw is set on the stage 3 in the second posture, and in this state the stage 3 is swung to the first posture. can also be excluded.
  • the blowing means 5 is provided with the blowing nozzle 51 inside the upper wall portion of the main chamber 1.
  • the main surface of the support plate portion 31, which is most likely to be affected during the vacuum processing is provided.
  • the inert gas of the first flow rate can be sprayed over the entire surface, the form and arrangement are not limited to this.
  • the spray nozzle 51 need not be rotated.
  • the exhaust port 14 is provided in the bottom wall of the main chamber 1 as an example.
  • the sputtering apparatus was explained as an example, but if a swinging stage is used, a film formation processing apparatus using a vacuum deposition method or a CVD method, a dry etching processing apparatus, or an ion implantation processing apparatus can be used.
  • the present invention can also be applied to other vacuum processing apparatuses.
  • VM vacuum processing apparatus
  • Sw substrate (substrate to be processed)
  • 1 main chamber (vacuum chamber)
  • 2 auxiliary chamber (vacuum chamber)
  • 3 stage
  • 4 sputtering cathode (processing unit)
  • 5 spraying means , 51... Blowing nozzle, 14... Exhaust port, 15... Vacuum pump, 15a... Exhaust pipe, 54... Motor (driving source).

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Abstract

Provided is a vacuum processing device capable of removing introduced particles to the greatest extent possible while maintaining a vacuum atmosphere.　The device has a vacuum chamber 1, 2 in which a processing unit 4 is installed. A vacuum pump 15 is connected to the vacuum chamber, and a stage 3 is provided within the vacuum chamber. An oscillation means to oscillate the stage between a first orientation and a second orientation is provided, the first orientation being the orientation of the stage when a substrate Sw faces the processing unit and is processed, and the second orientation being the orientation of the stage other than during processing. A spraying means 5 for spraying an inert gas toward the stage is provided in the vacuum chamber. The spraying means is configured to allow the flow rate to be switched between a first flow rate that enables particles adhering to at least one of the stage and the substrate to be blown away while the interior of the vacuum chamber is a vacuum atmosphere of prescribed pressure and a second flow rate that enables particles diffused within the vacuum chamber by being blown away to be transferred to the vacuum pump.

Description

真空処理装置Vacuum processing equipment
　本発明は、真空処理装置に関し、より詳しくは、真空雰囲気中で被処理基板に対して所定の処理を施すためのものに関する。 The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus for performing a predetermined process on a substrate to be processed in a vacuum atmosphere.
　この種の真空処理装置は、真空雰囲気中で被処理基板に対してスパッタリング法、真空蒸着法またはＣＶＤ法による成膜処理、ドライエッチング処理、イオン注入処理や熱処理といった各種の真空処理を施すために用いられる。例えば、フラットディスプレイパネルの製造工程にて大面積のガラス基板に対してスパッタリング法により成膜処理を実施するスパッタリング装置は、真空チャンバを備え、真空チャンバには、その内部を真空排気する真空ポンプが接続されると共に真空チャンバ内に被処理基板がセットされるステージが設けられている。ステージには、回転軸が設けられ、被処理基板がセットされるステージの主面が鉛直方向上方を向く水平姿勢（第１姿勢）と、被処理基板がセットされたステージの主面が水平方向を向く起立姿勢（第２姿勢）との間でステージが回転軸線回りに揺動自在に構成されている。そして、起立姿勢のステージの主面に対峙させて真空チャンバの壁面には、処理ユニットとしてのスパッタリングカソードユニットが配置される（例えば、特許文献１参照）。 This type of vacuum processing apparatus is used to perform various types of vacuum processing such as film formation processing by sputtering, vacuum deposition, or CVD, dry etching, ion implantation, and heat treatment on a substrate to be processed in a vacuum atmosphere. Used. For example, in the manufacturing process of a flat display panel, a sputtering apparatus for performing a film forming process on a large-sized glass substrate by a sputtering method is equipped with a vacuum chamber, and the vacuum chamber has a vacuum pump for evacuating the inside thereof. A stage is provided which is connected and on which a substrate to be processed is set in the vacuum chamber. The stage is provided with a rotation axis, and has a horizontal posture (first posture) in which the main surface of the stage on which the substrate to be processed is set faces vertically upward, and a main surface of the stage on which the substrate to be processed is set is in the horizontal direction. The stage is configured to be swingable around the rotation axis between a standing posture (second posture) facing the A sputtering cathode unit as a processing unit is arranged on the wall surface of the vacuum chamber so as to face the main surface of the stage in the upright posture (see, for example, Patent Document 1).
　ところで、上記各種の真空処理装置は、成膜材料の補充、ターゲット材の交換や、真空チャンバ内壁面への成膜材料の付着を防止する防着板の交換といったメンテメンスが作業者の手作業で定期的に実施される。このとき、所定の空気清浄度を持つクリーンルーム内に真空チャンバが設置されていたとしても、クリーンルーム内に浮遊するパーティクルが真空チャンバ内に持ち込まれて、ステージの主面などに付着する場合がある。このようなパーティクルは、良好な真空処理を阻害する虞があるため、メンテナンス終了後には、持ち込まれたパーティクルを排除することが望ましい（例えば、フラットディスプレイパネルの製造工程で利用される真空処理装置には、近年の高精細化、高機能化に伴い、所定サイズ以下のパーティクル数を可及的に少なくすることが求められている）。 By the way, in the various vacuum processing apparatuses described above, maintenance such as replenishment of the film-forming material, replacement of the target material, and replacement of the anti-adhesion plate that prevents the film-forming material from adhering to the inner wall surface of the vacuum chamber is performed manually by an operator. Conducted on a regular basis. At this time, even if the vacuum chamber is installed in a clean room with a predetermined degree of air cleanliness, particles floating in the clean room may be brought into the vacuum chamber and adhere to the main surface of the stage or the like. Since such particles may interfere with good vacuum processing, it is desirable to remove the particles brought in after maintenance (for example, vacuum processing equipment used in the manufacturing process of flat display panels). In recent years, the number of particles smaller than a predetermined size has been required to be reduced as much as possible in accordance with the recent trend toward higher definition and higher functionality).
　パーティクルを排除する方法の一つとして、真空チャンバ内を大気雰囲気と所定圧力の真空雰囲気とを交互に複数回繰り返す所謂サイクルベントが一般に知られている。これによれば、真空雰囲気の真空チャンバ内に窒素ガスやアルゴンガスといったベントガスを導入する際に、ステージの主面などに付着したパーティクルが舞い上げられ、次に、真空ポンプにより真空チャンバ内を真空排気するときに、舞い上げられたパーティクルが真空ポンプへと移送されることで、パーティクルを可及的に排除することができる。このようなサイクルベントは、例えば、半導体装置の製造工程で利用される真空処理装置のように、被処理基板（シリコンウエハ）のサイズが比較的小さいことで真空チャンバ内の容積を然程大きくする必要のないものには有効である。然し、フラットディスプレイパネルの製造工程で利用される真空処理装置のように、被処理基板のサイズが比較的大きいことで、真空チャンバ内の容積を大きくせざるを得ないような場合には、効果的にパーティクルを排除することができない。しかも、真空チャンバ内の容積が大きいと、真空チャンバ内を大気雰囲気に戻すベント処理や、所定圧力の真空雰囲気を形成するための排気処理に多大な時間を要し、これでは、生産性が損なわれるという問題が生じる。 As one method for removing particles, so-called cycle venting is generally known, in which an atmospheric atmosphere and a vacuum atmosphere of a predetermined pressure are alternately repeated multiple times in a vacuum chamber. According to this, when a vent gas such as nitrogen gas or argon gas is introduced into a vacuum chamber having a vacuum atmosphere, particles adhering to the main surface of the stage or the like are stirred up, and then the inside of the vacuum chamber is evacuated by a vacuum pump. Particles can be removed as much as possible by transferring the particles that are stirred up to the vacuum pump when exhausting. Such a cycle vent, for example, as in a vacuum processing apparatus used in the manufacturing process of a semiconductor device, requires a relatively small size of a substrate (silicon wafer) to be processed, thereby greatly increasing the volume of the vacuum chamber. Useful for things you don't need. However, in the case of a vacuum processing apparatus used in the manufacturing process of flat display panels, in which the size of the substrate to be processed is relatively large, the volume inside the vacuum chamber must be increased. particles cannot be eliminated. Moreover, if the volume of the vacuum chamber is large, it takes a long time to perform the venting process to return the inside of the vacuum chamber to the atmosphere and the exhaust process to create a vacuum atmosphere with a predetermined pressure, which impairs productivity. problem arises.
国際公開ＷＯ２０１９／０８２８６８International publication WO2019/082868
　本発明は、以上の点に鑑み、真空雰囲気を維持した状態で、持ち込まれたパーティクルを可及的に排除することができるようにした真空処理装置を提供することをその課題とするものである。 SUMMARY OF THE INVENTION In view of the above points, it is an object of the present invention to provide a vacuum processing apparatus capable of removing particles brought in as much as possible while maintaining a vacuum atmosphere. .
　上記課題を解決するために、本発明の真空処理装置は、真空雰囲気中で被処理基板に対して所定の処理を施す処理ユニットが設置される真空チャンバを有し、真空チャンバにその内部を真空排気する真空ポンプが接続されると共に真空チャンバ内に被処理基板がセットされるステージが設けられ、ステージにセットされた被処理基板が処理ユニットに対峙して所定の処理が施されるステージの姿勢を第１姿勢、所定の処理を施すとき以外のステージの姿勢を第２姿勢とし、第１姿勢と第２姿勢との間でステージを回転軸線回りに揺動する揺動手段を備え、真空チャンバ内にステージに向けて不活性ガスを吹き付ける吹付手段を更に備え、吹付手段が、真空チャンバ内を所定圧力の真空雰囲気とした状態でステージ及び被処理基板の少なくとも一方に付着したパーティクルの吹き飛ばしを可能とする第１流量と、吹き飛ばしにより真空チャンバ内に拡散したパーティクルの真空ポンプへの移送を可能とする第２流量との間で流量の切り換えが可能に構成されることを特徴とする。 In order to solve the above problems, the vacuum processing apparatus of the present invention has a vacuum chamber in which a processing unit for performing a predetermined processing on a substrate to be processed in a vacuum atmosphere is installed, and the inside of the vacuum chamber is evacuated. A stage is provided in which a vacuum pump for exhausting air is connected and a substrate to be processed is set in a vacuum chamber. is the first posture, the posture of the stage other than when performing a predetermined process is the second posture, the stage is rocked between the first posture and the second posture around the rotation axis, and the vacuum chamber is provided with: A blowing means for blowing an inert gas toward the stage is further provided inside, and the blowing means can blow away particles adhering to at least one of the stage and the substrate to be processed while the inside of the vacuum chamber is in a vacuum atmosphere of a predetermined pressure. and a second flow rate that enables transfer of particles diffused in the vacuum chamber by blowing away to the vacuum pump.
　本発明によれば、成膜材料の補充、ターゲット材の交換や、真空チャンバ内壁面への成膜材料の付着を防止する防着板の交換といったメンテメンスを作業者が実施した後、真空ポンプにより真空チャンバ内を粘性流領域の所定の圧力範囲（例えば、５Ｐａ～１０００Ｐａの範囲）まで真空排気する。所定の圧力範囲まで真空排気されると、ステージを第２姿勢とした状態で吹付手段によって窒素ガスやアルゴンガスといった不活性ガスを第１流量でステージに吹き付ける。第１流量は、例えば、１ＳＬＭ～１００ＳＬＭの範囲、好ましくは、１０ＳＬＭ以上の流量に設定され、このとき、真空チャンバ内が上記圧力範囲内に維持されるように真空ポンプの実効排気速度が適宜設定される。不活性ガスの第１流量での吹付時間は、例えば、予め実験的に求め、または、シミュレーションで算出することができる。なお、第１流量での不活性ガスのステージへの吹き付けは、真空ポンプにより真空チャンバ内を高真空（例えば、１０－５Ｐａ）まで真空排気した後に実施することができ、また、被処理基板に対して真空処理を施すためにステージに被処理基板がセットされた状態で実施することもできる。これにより、ステージや被処理基板に付着したパーティクルが吹き飛ばされて舞い上げられ、真空チャンバ内に拡散した状態となる（パーティクルの舞上工程）。 According to the present invention, after the operator performs maintenance such as replenishment of the film-forming material, replacement of the target material, and replacement of the anti-adhesion plate that prevents the film-forming material from adhering to the inner wall surface of the vacuum chamber, the vacuum pump is operated. The inside of the vacuum chamber is evacuated to a predetermined pressure range (for example, a range of 5 Pa to 1000 Pa) in the viscous flow region. When the stage is evacuated to a predetermined pressure range, the inert gas such as nitrogen gas or argon gas is blown onto the stage at a first flow rate by the blowing means while the stage is in the second posture. The first flow rate is set to, for example, a range of 1 SLM to 100 SLM, preferably a flow rate of 10 SLM or more, and at this time, the effective pumping speed of the vacuum pump is appropriately set so that the pressure in the vacuum chamber is maintained within the above range. be done. The spraying time of the inert gas at the first flow rate can be experimentally determined in advance or calculated by simulation, for example. The inert gas at the first flow rate can be blown onto the stage after the inside of the vacuum chamber is evacuated to a high vacuum (for example, 10 −5 Pa) by a vacuum pump. It is also possible to perform vacuum processing while the substrate to be processed is set on the stage. As a result, the particles adhering to the stage and the substrate to be processed are blown off and blown up into a state of being diffused in the vacuum chamber (particle flying process).
　次に、ステージや被処理基板に付着したパーティクルの舞い上げが終了すると、吹付手段は、第１流量から第２流量に切り換えて不活性ガスを真空チャンバに導入する。第２流量は、舞い上げられたパーティクルのサイズなどに応じて、例えば、３００ｓｃｃｍ～１０００ｓｃｃｍの範囲の流量に設定され、このとき、上記同様、真空チャンバ内が上記圧力範囲内に維持されるように真空ポンプの実効排気速度が適宜設定される。これにより、真空チャンバ内に拡散したパーティクルが真空ポンプに通じる真空チャンバの排気口へと導かれ、真空ポンプへと移送される（パーティクルの移送工程）。不活性ガスの第２流量での吹付時間は、上記同様、例えば、予め実験的に求め、または、シミュレーションで算出することができる。なお、舞上工程と移送工程とを順次複数回繰り返すようにしてもよい。 Next, when the particles adhering to the stage and the substrate to be processed have been blown up, the spraying means switches from the first flow rate to the second flow rate to introduce the inert gas into the vacuum chamber. The second flow rate is set to a flow rate in the range of, for example, 300 sccm to 1000 sccm according to the size of the particles that are blown up. The effective pumping speed of the vacuum pump is appropriately set. As a result, the particles diffused in the vacuum chamber are guided to the exhaust port of the vacuum chamber that communicates with the vacuum pump and transferred to the vacuum pump (particle transfer step). The spraying time of the inert gas at the second flow rate can be experimentally determined in advance or calculated by simulation, for example, in the same manner as described above. In addition, you may make it repeat a dance process and a transfer process several times one by one.
　このように本発明では、真空チャンバ内を真空雰囲気とした状態で、比較的多量（第１流量）の不活性ガスを吹き付けてステージなどに付着したパーティクルを舞い上げ、この舞い上げられたパーティクルが更にステージなどに付着しないように、比較的少量（第２流量）の不活性ガスを導入して排気口へと導くことで、真空チャンバ内の真空雰囲気を維持したまま、持ち込まれたパーティクルを可及的に排除することができる。しかも、真空チャンバ内を大気雰囲気に戻すベント処理と排気処理とを繰り返す必要がないため、パーティクルの排除のための時間は少なくて済み、真空チャンバ内の容積が大きい場合に、有利である。その上、不活性ガスを利用するため、第２姿勢でステージに被処理基板をセットし、この状態でステージを揺動させて第１姿勢とし、真空処理を実施する際に、真空処理に先立ってパーティクルを排除することもできる。 As described above, according to the present invention, in a vacuum chamber, a relatively large amount (first flow rate) of inert gas is blown to stir up particles adhering to the stage or the like, and the lifted particles are removed. Furthermore, by introducing a relatively small amount of inert gas (second flow rate) and guiding it to the exhaust port so as not to adhere to the stage, etc., the particles brought in can be removed while maintaining the vacuum atmosphere in the vacuum chamber. can be eliminated. Moreover, since it is not necessary to repeat the venting process and the exhausting process for returning the inside of the vacuum chamber to the atmospheric atmosphere, the time required for removing particles can be shortened, which is advantageous when the volume inside the vacuum chamber is large. In addition, since the inert gas is used, when the substrate to be processed is set on the stage in the second posture, the stage is swung to the first posture in this state, and the vacuum processing is performed, prior to the vacuum processing, You can also remove particles with
　本発明において、前記吹付手段は、前記真空チャンバ内で前記ステージ上方に前記回転軸線と平行に配置されると共に当該回転軸線に沿うステージの幅と同等以上の長さを持つ吹付ノズルを備え、ステージが第１姿勢と第２姿勢との間で揺動される間、吹付ノズルから第１流量の不活性ガスをライン状に吹き付ける構成を採用してもよい。これによれば、ステージの揺動を利用して、被処理基板がセットされるステージの主面全体に亘って不活性ガスを吹き付けることができ、ステージなどに付着したパーティクルを確実に舞い上げることができる。 In the present invention, the spraying means includes a spray nozzle disposed parallel to the rotation axis above the stage in the vacuum chamber and having a length equal to or greater than the width of the stage along the rotation axis, and the stage A configuration may be adopted in which the inert gas is sprayed in a line from the spray nozzle at the first flow rate while the is swung between the first posture and the second posture. According to this, by utilizing the oscillation of the stage, the inert gas can be blown over the entire main surface of the stage on which the substrate to be processed is set. can be done.
　また、本発明において、前記吹付手段は、前記真空チャンバ内で前記ステージ上方に前記回転軸線と平行に配置されると共に当該回転軸線に沿うステージの幅と同等以上の長さを持つ吹付ノズルを備え、吹付ノズルのノズル孔を前記回転軸線に平行な他の回転軸線回りに揺動させる駆動源を有する構成を採用してもよい。これにより、例えば、ステージを揺動させない状態でも、被処理基板がセットされるステージの主面全体に亘って不活性ガスを吹き付けることができ、しかも、第２流量で不活性ガスを吹き出す際に、吹付ノズルのノズル孔を揺動させることで、舞い上げられたパーティクルを排気口へとより確実に導くことができ、有利である。なお、前記真空ポンプからの排気管が接続される前記真空チャンバの排気口が前記ステージの下方に位置させて開設されていれば、重力も加わって、より一層確実に舞い上げられたパーティクルを排気口へと導くことがでる。 Further, in the present invention, the spraying means includes a spray nozzle disposed above the stage in the vacuum chamber parallel to the rotation axis and having a length equal to or greater than the width of the stage along the rotation axis. Alternatively, a configuration having a drive source for swinging the nozzle hole of the spray nozzle about another rotation axis parallel to the rotation axis may be employed. As a result, for example, even when the stage is not rocked, the inert gas can be blown over the entire main surface of the stage on which the substrate to be processed is set. By swinging the nozzle hole of the spray nozzle, it is possible to more reliably guide the blown up particles to the exhaust port, which is advantageous. Incidentally, if the exhaust port of the vacuum chamber to which the exhaust pipe from the vacuum pump is connected is located below the stage, gravity will also be applied, and the particles that have been stirred up will be more reliably exhausted. You can lead it to your mouth.
本実施形態の真空処理装置（スパッタリング装置）の模式断面図。1 is a schematic cross-sectional view of a vacuum processing apparatus (sputtering apparatus) of this embodiment; FIG. 吹付ノズルを説明する正面図。The front view explaining a spray nozzle.
　以下、図面を参照して、真空雰囲気中での処理をスパッタリング法による成膜処理、処理ユニットをスパッタリングカソード、被処理基板をガラス基板（以下、「基板Ｓｗ」という）とし、真空雰囲気中の真空チャンバ内にて基板Ｓｗの一方の面に所定の薄膜を成膜する場合を例に本発明の真空処理装置の実施形態を説明する。以下において、上、下といった方向を示す用語は、真空処理装置の設置姿勢で示す図１を基準にする。 Hereinafter, with reference to the drawings, it is assumed that the process in a vacuum atmosphere is a film forming process by a sputtering method, the processing unit is a sputtering cathode, and the substrate to be processed is a glass substrate (hereinafter referred to as "substrate Sw"). An embodiment of the vacuum processing apparatus of the present invention will be described taking as an example the case of forming a predetermined thin film on one surface of the substrate Sw in the chamber. Hereinafter, terms indicating directions such as up and down are based on FIG. 1 showing the installation posture of the vacuum processing apparatus.
　図１を参照して、真空処理装置（スパッタリング装置）ＶＭは、略箱状のメインチャンバ１を備える。鉛直方向上方に位置するメインチャンバ１の上壁部は、後述のステージの揺動を許容しつつその容積を可及的に小さくするため、ステージの揺動に対応する湾曲した形状を有する。また、メインチャンバ１の一側壁部（図１中、左側壁部）には、補助チャンバ２が連設され、メインチャンバ１の一側壁部に設けた開口１１を通して互いに連通可能としている。メインチャンバ１の他側壁部（図１中、右側壁部）には、シャッタ板１２で開閉自在な基板搬送用の開口１３が設けられ、開口１３を介してメインチャンバ１内に基板Ｓｗが出し入れ自在となっている。また、鉛直方向下方に位置するメインチャンバ１の底壁部には排気口１４が形成され、排気口１４には、真空ポンプ１５からの排気管１５ａが接続され、メインチャンバ１内を大気圧から高真空領域まで真空排気することができる。本実施形態では、後述の吹付ノズルの下方に位置させて排気口１４が設けられ、また、排気管１５ａには、真空ポンプ１５の実効排気速度を調整できるようにコンダクタンスバルブ１５ｂが介設されている。 Referring to FIG. 1, a vacuum processing apparatus (sputtering apparatus) VM includes a substantially box-shaped main chamber 1 . The upper wall portion of the main chamber 1 positioned vertically upward has a curved shape corresponding to the swing of the stage in order to minimize the volume thereof while allowing the swing of the stage, which will be described later. An auxiliary chamber 2 is connected to one side wall of the main chamber 1 (left side wall in FIG. 1) and can communicate with each other through an opening 11 provided in one side wall of the main chamber 1 . The other side wall portion of the main chamber 1 (the right side wall portion in FIG. 1) is provided with an opening 13 for substrate transfer that can be opened and closed by a shutter plate 12, and the substrate Sw is taken in and out of the main chamber 1 through the opening 13. It is free. Further, an exhaust port 14 is formed in the bottom wall portion of the main chamber 1 located vertically downward, and an exhaust pipe 15a from a vacuum pump 15 is connected to the exhaust port 14, so that the inside of the main chamber 1 is removed from the atmospheric pressure. It can be evacuated to a high vacuum region. In this embodiment, an exhaust port 14 is provided below a spray nozzle, which will be described later, and a conductance valve 15b is interposed in the exhaust pipe 15a so as to adjust the effective exhaust speed of the vacuum pump 15. there is
　メインチャンバ１内には、基板Ｓｗを保持した状態で揺動自在なステージ３が設けられている。ステージ３は、基板Ｓｗより一回り大きな面積を有して基板Ｓｗを保持する機能部品を持つ支持板部３１を備える。機能部品としては、特に図示して説明しないが、支持板部３１の上面外周縁に設けた爪部やメカクランプなど公知の部品を利用することができる。補助チャンバ２側に位置する支持板部３１の下面一側端には、斜め下方に延びるアーム部３２が取り付けられ、アーム部３２の下端が、水平方向にのびるようにメインチャンバ１内に軸支される回転軸部３３に連結されている。回転軸部３３の一端（図１中、奥行き方向）は、駆動手段としてのモータ３４の出力軸に連結されている。これにより、基板Ｓｗを保持するステージ３の支持板部３１の主面（基板Ｓｗが保持される面）が鉛直方向上方を向く第１姿勢と、支持板部３１の外周縁部が開口１１の外周縁部に位置するメインチャンバ１の一側壁部内面に当接する第２姿勢との間でステージ３が揺動自在となる。 A stage 3 is provided in the main chamber 1 so as to be capable of swinging while holding the substrate Sw. The stage 3 includes a support plate portion 31 having a functional part that has an area one size larger than the substrate Sw and holds the substrate Sw. As the functional parts, although not shown and described, known parts such as claws provided on the outer peripheral edge of the upper surface of the support plate portion 31 and mechanical clamps can be used. An arm portion 32 extending obliquely downward is attached to one side end of the lower surface of the support plate portion 31 located on the auxiliary chamber 2 side, and the lower end of the arm portion 32 is pivotally supported in the main chamber 1 so as to extend horizontally. It is connected to the rotating shaft portion 33 that is connected to the One end (depth direction in FIG. 1) of the rotating shaft portion 33 is connected to an output shaft of a motor 34 as a driving means. As a result, the main surface of the support plate portion 31 of the stage 3 that holds the substrate Sw (the surface on which the substrate Sw is held) faces upward in the vertical direction, and the outer peripheral edge portion of the support plate portion 31 faces the opening 11 . The stage 3 is allowed to swing between a second position in which it abuts against the inner surface of one side wall of the main chamber 1 positioned at the outer peripheral edge.
　補助チャンバ２内には、処理ユニットとしてのスパッタリングカソード４が設けられている。スパッタリングカソード４は、第２姿勢をとるステージ３に正対配置されるターゲット４１を備え、ターゲット４１の一方の面に接合されるバッキングプレート４２を介して補助チャンバ２内に設置される。なお、特に図示して説明しないが、補助チャンバ２にもまた真空ポンプが接続され、また、真空チャンバ１にプラズマを形成する際に導入されるアルゴンガス等の希ガスや、反応性スパッタリングの際の反応ガスが導入できるようになっている。そして、図外のスパッタ電源からターゲット４１に、ターゲット種に応じて負の電位を持つ所定電力や交流電力を投入し、補助チャンバ２内にプラズマを形成してターゲット４１をスパッタリングして基板Ｓｗ表面に所定の薄膜を成膜することができる。 A sputtering cathode 4 as a processing unit is provided in the auxiliary chamber 2 . The sputtering cathode 4 includes a target 41 that faces the stage 3 in the second posture, and is installed in the auxiliary chamber 2 via a backing plate 42 bonded to one surface of the target 41 . Although not shown and explained, the auxiliary chamber 2 is also connected to a vacuum pump, and a rare gas such as argon gas is introduced into the vacuum chamber 1 when plasma is formed, and a gas is introduced during reactive sputtering. of reaction gas can be introduced. Then, a predetermined power or AC power having a negative potential depending on the type of the target is applied to the target 41 from a sputtering power supply (not shown), plasma is formed in the auxiliary chamber 2, the target 41 is sputtered, and the surface of the substrate Sw is sputtered. A predetermined thin film can be formed on the substrate.
　ところで、上記真空処理装置ＶＭに対しては、ターゲット４１や防着板（図示せず）の交換といったメンテメンスが作業者の手作業で定期的に実施される。このとき、所定の空気清浄度を持つクリーンルーム内にメインチャンバ１が設置されていたとしても、クリーンルーム内に浮遊するパーティクルがメインチャンバ１にも持ち込まれて、ステージ３の支持板部３１などに付着する場合がある。このようなパーティクルは基板Ｓｗへの成膜に悪影響を及ぼすため、成膜処理に先立って所定サイズ以下のパーティクル数を可及的に少なくする必要がある。本実施形態では、ステージ３に向けて不活性ガスを吹き付ける吹付手段５を設けることとした。 By the way, for the vacuum processing apparatus VM, maintenance such as replacement of the target 41 and the anti-adhesion plate (not shown) is periodically performed manually by an operator. At this time, even if the main chamber 1 is installed in a clean room with a predetermined degree of air cleanliness, particles floating in the clean room are brought into the main chamber 1 and adhere to the support plate portion 31 of the stage 3 and the like. sometimes. Since such particles adversely affect film formation on the substrate Sw, it is necessary to reduce the number of particles of a predetermined size or smaller as much as possible prior to the film formation process. In this embodiment, a blowing means 5 for blowing an inert gas toward the stage 3 is provided.
　図２も参照して、吹付手段５は、メインチャンバ１の上壁部内面に設けた吹付ノズル５１を備える。吹付ノズル５１は、ステージ３の支持板部３１の幅（図１中、奥行き方向の幅）より長い金属製の筒体で構成され、その外周面には、一方向に間隔を存して複数のノズル孔５１ａが列設され、各ノズル孔５１ａからライン状に不活性ガスを吹き出すことができる。また、吹付ノズル５１には、メインチャンバ１の上壁部を貫通してその内部に突出するガス配管５２が接続されている。この場合、特に図示して説明しないが、吹付ノズル５１内に拡散板を配置し、ガス配管５２を通じて供給される不活性ガスを拡散して各ノズル孔５１ａから略均等に不活性ガスが吹き出すようにしてもよい。そして、ガス配管５２が、流量制御弁５３を介して図外のガス源に連通している。不活性ガスとしては、窒素ガスやアルゴンガスなどの希ガスが利用され、また、流量制御弁５３は、ステージ３や基板Ｓｗに付着したパーティクルの吹き飛ばしを可能とする第１流量と、舞い上げられたパーティクルをメインチャンバ１内で拡散させて排気口１４へ送ることができる第２流量とを切り換えて不活性ガスを吹付ノズル５１に供給できるようにしている。吹付ノズル５１にはまた、その軸線（回転軸線）回りに回転させる駆動源としてのモータ５４の回転軸が接続され、吹付ノズル５１を所定の角度範囲で往復するように回転させることで、各ノズル孔５１ａを軸線回りに所定の角度範囲内で往復するように揺動させることができる。以下に、メンテメンス実施後のパーティクルの排除手順を説明する。 Also referring to FIG. 2, the spray means 5 includes a spray nozzle 51 provided on the inner surface of the upper wall portion of the main chamber 1 . The spray nozzle 51 is composed of a metal cylinder longer than the width of the support plate portion 31 of the stage 3 (the width in the depth direction in FIG. 1), and a plurality of spray nozzles 51 are spaced apart in one direction on the outer peripheral surface thereof. nozzle holes 51a are arranged in a row, and the inert gas can be blown out in a line form from each nozzle hole 51a. A gas pipe 52 is connected to the spray nozzle 51 so as to extend through the upper wall of the main chamber 1 and protrude inside. In this case, although not shown and described in particular, a diffusion plate is placed in the spray nozzle 51 so as to diffuse the inert gas supplied through the gas pipe 52 so that the inert gas is blown out substantially uniformly from each nozzle hole 51a. can be A gas pipe 52 communicates with a gas source (not shown) via a flow control valve 53 . A rare gas such as nitrogen gas or argon gas is used as the inert gas. Inert gas can be supplied to the spray nozzle 51 by switching the second flow rate that can diffuse the particles in the main chamber 1 and send them to the exhaust port 14 . The spray nozzle 51 is also connected to a rotary shaft of a motor 54 as a drive source for rotating about its axis (rotational axis). The hole 51a can be reciprocated around the axis within a predetermined angular range. The procedure for removing particles after maintenance is described below.
　メンテメンス実施後には、ステージ３を第２姿勢とした状態で真空ポンプ１５によりメインチャンバ１及び補助チャンバ２内を粘性流領域の所定の圧力範囲（例えば、５Ｐａ～１０００Ｐａの範囲）まで真空排気する。所定の圧力範囲まで真空排気されると、流量制御弁５３が制御されて不活性ガスが第１流量で吹付ノズル５１に供給され、各ノズル孔５１ａから不活性ガスを第１流量でライン状に吹き出す。第１流量は、例えば、１ＳＬＭ～１００ＳＬＭの範囲、好ましくは、１０ＳＬＭ以上の流量に設定され、また、メインチャンバ１内が上記圧力範囲内に維持されるようにコンダクタンスバルブ１５ｂの開度が適宜調整される。これに併せて、モータ５４により吹付ノズル５１を所定の角度範囲内で往復するように回転させると共に、第１姿勢に達するまでステージ３を揺動させる。不活性ガスの第１流量での吹付時間は、例えば、予め実験的に求め、または、シミュレーションで算出することができ、これに応じてステージ３の揺動速度が設定される。なお、第１流量での不活性ガスのステージ３への吹き付けは、真空ポンプ１５によりメインチャンバ１及び補助チャンバ２内を高真空（例えば、１０－５Ｐａ）まで真空排気した後に実施することができ、また、基板Ｓｗに対して成膜するためにステージ３に基板Ｓｗがセットされた状態で実施することもできる。これにより、支持板部３１の主面全面を含むステージ３にライン状の不活性ガスが吹き付けられ、ステージ３や基板Ｓｗに付着したパーティクルが吹き飛ばされて舞い上げられ、メインチャンバ１内に拡散した状態となる（パーティクルの舞上工程）。 After the maintenance, the vacuum pump 15 evacuates the main chamber 1 and the auxiliary chamber 2 to a predetermined pressure range (for example, 5 Pa to 1000 Pa) in the viscous flow region while the stage 3 is in the second posture. When the gas is evacuated to a predetermined pressure range, the flow rate control valve 53 is controlled to supply the inert gas at the first flow rate to the spray nozzle 51, and the inert gas at the first flow rate is linearly supplied from each nozzle hole 51a. Blow out. The first flow rate is set to, for example, a range of 1 SLM to 100 SLM, preferably a flow rate of 10 SLM or more, and the opening of the conductance valve 15b is adjusted appropriately so that the pressure in the main chamber 1 is maintained within the above range. be done. Along with this, the motor 54 rotates the spray nozzle 51 so as to reciprocate within a predetermined angular range, and swings the stage 3 until it reaches the first posture. The spraying time of the inert gas at the first flow rate can be experimentally determined in advance or calculated by simulation, and the swing speed of the stage 3 is set accordingly. The inert gas can be blown onto the stage 3 at the first flow rate after the main chamber 1 and the auxiliary chamber 2 are evacuated to a high vacuum (eg, 10 −5 Pa) by the vacuum pump 15. Alternatively, the film formation on the substrate Sw can be performed while the substrate Sw is set on the stage 3 . As a result, a line-shaped inert gas is blown onto the stage 3 including the entire main surface of the support plate portion 31 , and the particles adhering to the stage 3 and the substrate Sw are blown off and blown up and diffused into the main chamber 1 . state (particle dance process).
　次に、ステージ３が第１姿勢となり、ステージ３や基板Ｓｗに付着したパーティクルの舞い上げが終了すると、ステージ３の第１姿勢を維持する（つまり、メインチャンバ１と補助チャンバ２とが互いに隔絶された状態を維持する）と共に、吹付ノズル５１の回転をそのまま維持した状態で、流量制御弁５３が制御されて不活性ガスが第２流量で吹付ノズル５１に供給され、各ノズル孔５１ａから不活性ガスを第２流量でライン状に吹き出す。第２流量は、舞い上げられたパーティクルのサイズなどに応じて、例えば、３００ｓｃｃｍ～１０００ｓｃｃｍの範囲の流量に設定され、このとき、上記同様、メインチャンバ１内が上記圧力範囲内に維持されるようにコンダクタンスバルブ１５ｂの開度が適宜調整される。これにより、メインチャンバ１内に拡散したパーティクルは、重力も加わって排気口１４へと導かれ、真空ポンプ１５へと移送される（パーティクルの移送工程）。不活性ガスの第２流量での吹付時間は、上記同様、例えば、予め実験的に求め、または、シミュレーションで算出することができる。また、このような舞上工程と移送工程とを順次複数回繰り返すことができ、パーティクルの舞上工程では、第１姿勢から第２姿勢までステージ３を揺動させるとき、第１流量で不活性ガスを吹き付けるようにしてもよい。 Next, the stage 3 takes the first posture, and when the particles adhering to the stage 3 and the substrate Sw are finished stirring up, the first posture of the stage 3 is maintained (that is, the main chamber 1 and the auxiliary chamber 2 are isolated from each other). The flow rate control valve 53 is controlled to supply the inert gas to the spray nozzle 51 at the second flow rate while maintaining the rotation of the spray nozzle 51, and the inert gas is supplied from each nozzle hole 51a. The active gas is blown out in a line at a second flow rate. The second flow rate is set, for example, to a flow rate in the range of 300 sccm to 1000 sccm according to the size of the particles that are blown up, and at this time, the inside of the main chamber 1 is maintained within the pressure range as described above. Then, the opening degree of the conductance valve 15b is appropriately adjusted. As a result, the particles that have diffused into the main chamber 1 are guided to the exhaust port 14 by gravity and transferred to the vacuum pump 15 (particle transfer step). The spraying time of the inert gas at the second flow rate can be experimentally determined in advance or calculated by simulation, for example, in the same manner as described above. In addition, such a dancing process and a transfer process can be sequentially repeated a plurality of times. You may make it blow gas.
　以上の実施形態によれば、比較的多量（第１流量）の不活性ガスを吹き付けてステージ３などの付着したパーティクルを舞い上げ、この舞い上げられたパーティクルが更にステージ３などに付着しないように、比較的少量（第２流量）の不活性ガスを導入して排気口１４へと導くことで、メインチャンバ１内の真空雰囲気を維持したまま、持ち込まれたパーティクルを可及的に排出することができる。しかも、メインチャンバ１内を大気雰囲気に戻すベント処理と排気処理とを繰り返す必要がないため、パーティクルの排除のための時間は少なくて済み、メインチャンバ１内の容積が大きい場合に、有利である。その上、不活性ガスを利用するため、第２姿勢でステージ３に基板Ｓｗをセットし、この状態でステージ３を揺動させて第１姿勢とし、成膜する際に、これに先立ってパーティクルを排除することもできる。 According to the above-described embodiment, a relatively large amount (first flow rate) of inert gas is blown to stir up particles adhering to the stage 3 and the like so that the stirred up particles do not further adhere to the stage 3 and the like. By introducing a relatively small amount (second flow rate) of inert gas and leading it to the exhaust port 14, the vacuum atmosphere in the main chamber 1 is maintained while the particles brought in are discharged as much as possible. can be done. Moreover, since it is not necessary to repeat the venting process and the exhausting process to return the inside of the main chamber 1 to the atmospheric atmosphere, the time required for removing particles can be shortened, which is advantageous when the volume inside the main chamber 1 is large. . In addition, since the inert gas is used, the substrate Sw is set on the stage 3 in the second posture, and in this state the stage 3 is swung to the first posture. can also be excluded.
　以上、本発明の実施形態について説明したが、本発明の技術思想の範囲を逸脱しない限り、種々の変形が可能である。上記実施形態では、メインチャンバ１の上壁部内側に吹付ノズル５１を備えるものを例に吹付手段５を説明したが、少なくとも真空処理時に最も影響を与える可能性がある支持板部３１の主面全面に亘って第１流量の不活性ガスを吹き付けられるのであれば、その形態や配置はこれに限定されるものではない。例えば、本実施形態のようにステージ３が揺動されるものであれば、吹付ノズル５１を回転させる必要はない。また、上記実施形態では、排気口１４をメインチャンバ１の底壁部に設けたものを例に説明したが、メインチャンバ１内に拡散したパーティクルが導かれる位置であれば、これに限定されるものではない。更に、上記実施形態では、スパッタリング装置を例に説明したが、揺動するステージを利用するものであれば、真空蒸着法やＣＶＤ法による成膜処理装置、ドライエッチング処理装置やイオン注入処理装置といった他の真空処理装置にも本発明は適用することができる。 Although the embodiment of the present invention has been described above, various modifications are possible without departing from the scope of the technical idea of the present invention. In the above embodiment, the blowing means 5 is provided with the blowing nozzle 51 inside the upper wall portion of the main chamber 1. However, at least the main surface of the support plate portion 31, which is most likely to be affected during the vacuum processing, is provided. As long as the inert gas of the first flow rate can be sprayed over the entire surface, the form and arrangement are not limited to this. For example, if the stage 3 is oscillated as in this embodiment, the spray nozzle 51 need not be rotated. Further, in the above embodiment, the exhaust port 14 is provided in the bottom wall of the main chamber 1 as an example. not a thing Furthermore, in the above embodiment, the sputtering apparatus was explained as an example, but if a swinging stage is used, a film formation processing apparatus using a vacuum deposition method or a CVD method, a dry etching processing apparatus, or an ion implantation processing apparatus can be used. The present invention can also be applied to other vacuum processing apparatuses.
　ＶＭ…真空処理装置、Ｓｗ…基板（被処理基板）、１…メインチャンバ（真空チャンバ）、２…補助チャンバ（真空チャンバ）、３…ステージ、４…スパッタリングカソード（処理ユニット）、５…吹付手段、５１…吹付ノズル、１４…排気口、１５…真空ポンプ、１５ａ…排気管、５４…モータ（駆動源）。 VM: vacuum processing apparatus, Sw: substrate (substrate to be processed), 1: main chamber (vacuum chamber), 2: auxiliary chamber (vacuum chamber), 3: stage, 4: sputtering cathode (processing unit), 5: spraying means , 51... Blowing nozzle, 14... Exhaust port, 15... Vacuum pump, 15a... Exhaust pipe, 54... Motor (driving source).

Claims (4)

  1. 　真空雰囲気中で被処理基板に対して所定の処理を施す処理ユニットが設置される真空チャンバを有し、真空チャンバにその内部を真空排気する真空ポンプが接続されると共に真空チャンバ内に被処理基板がセットされるステージが設けられ、ステージにセットされた被処理基板が処理ユニットに対峙して所定の処理が施されるステージの姿勢を第１姿勢、所定の処理を施すとき以外のステージの姿勢を第２姿勢とし、第１姿勢と第２姿勢との間でステージを回転軸線回りに揺動する揺動手段を備える真空処理装置において、
    　真空チャンバ内にステージに向けて不活性ガスを吹き付ける吹付手段を更に備え、吹付手段が、真空チャンバ内を所定圧力の真空雰囲気とした状態でステージ及び被処理基板の少なくとも一方に付着したパーティクルの吹き飛ばしを可能とする第１流量と、吹き飛ばしにより真空チャンバ内に拡散したパーティクルの真空ポンプへの移送を可能とする第２流量との間で流量の切り換えが可能に構成されることを特徴とする真空処理装置。     A vacuum chamber having a processing unit for performing predetermined processing on a substrate to be processed in a vacuum atmosphere is installed, a vacuum pump for evacuating the inside of the vacuum chamber is connected to the vacuum chamber, and the substrate to be processed is placed in the vacuum chamber. is provided, and the substrate to be processed set on the stage faces the processing unit and is subjected to a predetermined process. is the second posture, and the vacuum processing apparatus includes a swing means for swinging the stage about the rotation axis between the first posture and the second posture,
    A blowing means for blowing an inert gas into the vacuum chamber toward the stage is further provided, and the blowing means blows away particles adhering to at least one of the stage and the substrate to be processed while the inside of the vacuum chamber is in a vacuum atmosphere of a predetermined pressure. and a second flow rate that allows the particles diffused in the vacuum chamber by blowing off to be transferred to the vacuum pump. processing equipment.
  2. 　前記吹付手段は、前記真空チャンバ内で前記ステージ上方に前記回転軸線と平行に配置されると共に当該回転軸線に沿うステージの幅と同等以上の長さを持つ吹付ノズルを備え、ステージが第１姿勢と第２姿勢との間で揺動される間、吹付ノズルから第１流量の不活性ガスをライン状に吹き付けることを特徴とする請求項１記載の真空処理装置。 The spraying means includes a spray nozzle disposed above the stage in the vacuum chamber parallel to the rotation axis and having a length equal to or greater than the width of the stage along the rotation axis, and the stage is in the first posture. 2. The vacuum processing apparatus according to claim 1, wherein the inert gas is sprayed in a line from the spray nozzle at the first flow rate while being swung between the second posture and the second posture.
  3. 　前記吹付手段は、前記真空チャンバ内で前記ステージ上方に前記回転軸線と平行に配置されると共に当該回転軸線に沿うステージの幅と同等以上の長さを持つ吹付ノズルを備え、吹付ノズルのノズル孔を前記回転軸線に平行な他の回転軸線回りに揺動させる駆動源を有することを特徴とする請求項１記載の真空処理装置。 The spraying means includes a spray nozzle arranged parallel to the rotation axis above the stage in the vacuum chamber and having a length equal to or greater than the width of the stage along the rotation axis, and a nozzle hole of the spray nozzle. 2. A vacuum processing apparatus according to claim 1, further comprising a drive source for oscillating around another rotation axis parallel to said rotation axis.
  4. 　前記真空ポンプからの排気管が接続される前記真空チャンバの排気口が前記ステージの下方に位置させて開設されることを特徴とする請求項２または請求項３記載の真空処理装置。 4. The vacuum processing apparatus according to claim 2, wherein an exhaust port of said vacuum chamber to which an exhaust pipe from said vacuum pump is connected is opened below said stage.
PCT/JP2022/012560 2021-07-16 2022-03-18 Vacuum processing device WO2023286369A1 (en)

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JP2020010001A (en) * 2018-07-12 2020-01-16 東京エレクトロン株式会社 Cleaning method and substrate processing apparatus

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JP2004332117A (en) * 2004-07-30 2004-11-25 Ulvac Japan Ltd Sputtering method, substrate supporting device, and sputtering apparatus
JP2006253629A (en) * 2005-02-08 2006-09-21 Tokyo Electron Ltd Substrate processing apparatus, method for controlling the same, and program
JP2020010001A (en) * 2018-07-12 2020-01-16 東京エレクトロン株式会社 Cleaning method and substrate processing apparatus

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