JP2006253629A - Substrate processing apparatus, method for controlling the same, and program - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus where energy and costs required for elimination of evil effects of exhaust can be reduced by reducing a burden on an evil effect elimination means which eliminates the evil effects of the exhaust. <P>SOLUTION: The substrate processing apparatus is provided with a plurality of processing chambers 200A, 200B, etc. for carrying out prescribed processing by introducing gas, exhaust systems 220A, 220B, etc. provided respectively in the respective processing chambers, and a common exhaust system 310 connecting the exhaust systems of two or more processing chambers among the exhaust systems of the respective processing chambers. The common exhaust system comprises an evil effect elimination common exhaust system 320 which eliminates the evil effect from the exhaust systems of the respective processing chambers by an evil effect elimination means 340 and thereafter which exhausts it, and an evil effect non-elimination common exhaust system 330 for exhausting the exhaust from the exhaust systems in the respective processing chambers without interposing the evil effect elimination means in a switchable manner. The apparatus is provided with a control unit 400 for carrying out switch control of the evil effect elimination common exhaust system and an evil effect non-elimination common exhaust system according to the kind of treatment carried out in the respective processing chambers. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus provided with a detoxifying device for detoxifying exhaust gas exhausted in processing of a substrate such as a semiconductor wafer or a liquid crystal substrate, a control method for the substrate processing apparatus, and a program.

  As a substrate processing apparatus, a predetermined gas is used for a substrate to be processed in a processing chamber such as a semiconductor wafer (hereinafter also simply referred to as “wafer”), a film forming process or an etching process, or a processing chamber using a predetermined gas. There are plasma processing apparatuses that perform cleaning and the like.

  Since the exhaust gas exhausted from the processing chamber of such substrate processing equipment may contain harmful or environmentally damaging products, it is recommended that the exhaust gas be discharged into the atmosphere as it is for environmental conservation. It is not appropriate from the viewpoint. For this reason, some exhaust gas is exhausted through a detoxifying device that detoxifies (detoxifies) the exhaust gas from the processing chamber by heat treatment or the like.

  As the substrate processing apparatus provided with the abatement apparatus, for example, as shown in FIG. 24, the abatement apparatuses 20A and 20B are provided for the respective processing chambers 10A and 10B of the substrate processing apparatus, and the abatement apparatuses 20A and 20B are respectively provided with the abatement apparatuses. There are some which connect the exhaust systems 12A and 12B of the processing chambers 10A and 10B to render the exhaust gas from the processing chambers 10A and 10B harmless. However, since such a device requires as many abatement devices as the number of processing chambers, there is a problem in that an installation area is required and the manufacturing cost increases.

  In order to solve such a problem, for example, as shown in FIG. 25, the exhaust systems 12A and 12B of the processing chambers 10A and 10B are connected to the common exhaust system 31, and the common exhaust system 31 is connected to the processing chambers 10A and 10B. There is also a technique in which exhaust gas from each of the processing chambers 10A and 10B is subjected to an abatement process with one abatement apparatus 30 by connecting a common abatement apparatus 30 (see, for example, Patent Documents 1 and 2).

Japanese Patent Laid-Open No. 11-8200 Japanese Patent Laid-Open No. 2004-95643

  By the way, among the processes executed in each processing chamber, for example, exhaust processing is performed at a high pressure state, such as roughing exhaust processing for roughing from an atmospheric pressure state to a predetermined pressure before processing a wafer in the processing chamber. Some are done. Moreover, in such roughing exhaust processing, since the processing gas is not yet introduced into the processing chamber, it is not necessary to remove the exhaust.

  However, in the case shown in FIGS. 24 and 25, all exhaust from each processing chamber is exhausted through the abatement apparatus regardless of the type of processing executed in each processing chamber. Therefore, as described above, the exhaust gas is exhausted at a high pressure state, and the rough exhaust processing that does not require the exhaust gas to be removed is exhausted after being removed through the abatement device. This increases the burden on the abatement device and reduces the service life.

  In recent years, the size of substrates to be processed, such as wafers and liquid crystal panels, has increased significantly, with the accompanying increase in the size of processing chambers and the amount of exhaust from the processing chambers greatly increasing. From the viewpoint, the burden on the abatement device is increasing.

  Further, since the abatement apparatus performs a detoxification process such as by heat treatment, the energy required for the exhaust process increases as the number of the abatement apparatuses increases. Therefore, the energy efficiency of the factory where the substrate processing apparatus is installed also decreases, and the energy consumption of the entire factory increases. From the viewpoint of energy efficiency and cost of the entire factory, what can remove exhaust gas with as low energy as possible is desired.

  From this point of view, since it is better that the number of abatement devices is small, rather than providing each abatement device as shown in FIG. 24, a common abatement device is used in each treatment chamber as shown in FIG. It is better to provide an abatement device. However, in the case shown in FIG. 25, the exhaust from each processing chamber is concentrated in a common abatement device. For example, when processing is performed in parallel in each processing chamber, depending on the type of the processing, The burden will increase.

  Therefore, the present invention has been made in view of such problems, and the object of the present invention is to reduce the burden on the abatement means for removing exhaust gas, which is necessary for exhaust gas elimination. An object of the present invention is to provide a substrate processing apparatus, a method for controlling the substrate processing apparatus, and a program capable of reducing energy and cost.

  In order to solve the above problems, according to one aspect of the present invention, a plurality of processing chambers for performing a predetermined processing by introducing a gas, exhaust systems provided in the respective processing chambers, and the respective processing A substrate processing apparatus comprising a common exhaust system connecting at least two processing chamber exhaust systems of the chamber exhaust systems, wherein the common exhaust system removes exhaust from the exhaust systems of the processing chambers. A detoxification common exhaust system that exhausts after detoxifying by means, and a non-detoxification common exhaust system that exhausts exhaust from the exhaust system of each processing chamber without going through the detoxification means, There is provided a substrate processing apparatus comprising control means for performing switching control between the detoxification common exhaust system and the non-detoxification common exhaust system in accordance with the type of processing to be performed in each processing chamber. The

  In order to solve the above problems, according to another aspect of the present invention, a plurality of processing chambers for performing a predetermined process by introducing a gas, exhaust systems provided in the respective processing chambers, A common exhaust system connecting at least two processing chamber exhaust systems among the exhaust systems of the processing chambers, wherein the common exhaust system removes exhaust from the exhaust systems of the processing chambers by an abatement means. Control of a substrate processing apparatus configured to be switchable between a detoxification common exhaust system that exhausts after the process and a non-detoxification common exhaust system that exhausts exhaust from the exhaust system of each processing chamber without going through the detoxification means A method for controlling a substrate processing apparatus, comprising: switching control between the abatement common exhaust system and the non-abatement common exhaust system in accordance with a type of a process performed in each of the process chambers. A method is provided.

  According to such an apparatus or a control method according to the present invention, the switching control between the abatement common exhaust system and the non-abatement common exhaust system is performed according to the type of processing executed in each processing chamber. For example, for roughing exhaust processing that is exhausted at a high pressure and does not require removal of the exhaust, it can be exhausted by a non-removal common exhaust system without any removal means. As a result, the burden on the abatement means for removing the exhaust gas can be reduced, and the energy and cost required for exhaust gas removal can be reduced.

  In the above apparatus or control method, when processing is performed in parallel in the plurality of processing chambers connected to the common exhaust system, the common exhaust system is switched to the non-detoxifying common exhaust system. A first process comprising a process (for example, a roughing exhaust process from an atmospheric pressure state that does not require exhaust gas removal) and a second process comprising a process executed by switching the common exhaust system to the detoxification common exhaust system ( For example, while one process is being performed in one of the plurality of process chambers, the plurality of processes are performed for the other process. A predetermined exclusive control may be performed so that it is not executed in another processing chamber among the processing chambers. Thereby, it is possible to prevent the first process and the second process from being performed simultaneously in different process chambers. For this reason, it is possible to reliably prevent the exhaust that needs to be removed without being exhausted without reducing the burden on the removal means.

  The apparatus or the control method further includes usage right reservation information storage means for storing reservation information on the usage right of the common exhaust system in each processing chamber, and exclusive control in each processing chamber is connected to the common exhaust system. When performing one of the first process and the second process in one of the plurality of process chambers, the plurality of processes in which one process is connected to the common exhaust system It is determined whether or not one of the chambers is being executed in another processing chamber, and when it is determined that the one of the processing is not being executed in another processing chamber, the other processing is executed and the one processing is performed. Is determined to be executed in another processing chamber, the other processing is put into a process waiting state, the usage right reservation information storage means stores the usage right reservation information for the common exhaust system, and thereafter Reservation information by right reservation information storage means It may perform reservation processing for executing other processing based on. In this case, the reservation process is, for example, a process of executing the other process for the process chamber in the process waiting state after one process in the other process chamber is completed. By performing such reservation processing, it is possible to automatically execute processing in the processing chamber in the processing waiting state.

  Further, in the reservation processing, when reservation information on the right to use the common exhaust system is stored for a plurality of processing chambers in the use right reservation information storage means, the other right in the order in which the reservation information is stored. Processing may be executed. According to this, even if a reservation occurs in a plurality of processing chambers, the processing can be executed in order.

  In the above apparatus or control method, the first process is a process that does not require exhaust gas detoxification, for example, and the process chamber includes at least a process involving exhaust of a predetermined pressure or higher. The second process is, for example, This is a process including at least a process involving exhaust that requires exhaust gas detoxification. According to this, exhaust at a high pressure can be prevented from being exhausted through the abatement means, and exhaust that needs to be abatted can be prevented from being exhausted through the abatement means. be able to. Therefore, the burden on the abatement means can be reduced.

  In the apparatus or the control method, the first process is, for example, a rough exhaust process for the process chamber or a process including the rough exhaust process (for example, an automatic inspection process or a maintenance process for the process chamber including the rough exhaust process). It is. Further, the second process is, for example, a process gas introduction process accompanied by exhaust of the process chamber or a process including the process gas introduction process (for example, an automatic inspection process or a maintenance process including a process gas introduction process). Such automatic inspection processing or maintenance processing may include roughing exhaust processing and processing gas introduction processing. In such cases, the exclusive control of the first processing and the second processing is also performed. While reducing the burden on harmful means, it is possible to reliably prevent exhaust that needs to be removed without being exhausted.

  In the apparatus or the control method, both the first process and the second process may be a rough exhaust process or a process including the rough exhaust process in the processing chamber. For example, it is possible to prevent, for example, roughing exhaust processing in different processing chambers from being performed at the same time, so that exhaust in roughing exhaust processing that requires detoxification is prevented from being exhausted without being removed. In addition, it is possible to reliably prevent exhaust backflow due to a pressure difference in each processing chamber based on the difference in the start timing of the roughing exhaust processing.

  In the above apparatus or control method, a gas introduction system for introducing a gas into the processing chamber is constituted by a processing gas introduction system for introducing a processing gas and an inert gas introduction system for introducing an inert gas, and the inert gas is introduced. The gas introduction system includes a first introduction system capable of introducing the inert gas at a predetermined flow rate and a second introduction system capable of introducing the inert gas at a flow rate larger than the first introduction system. May be. Thus, for example, the process of introducing the inert gas using the first introduction system is a low flow rate, so that the exhaust gas is exhausted through the abatement means by the abatement common exhaust system, and the inert gas is deactivated using the second introduction system. Since the gas introduction process has a large flow rate, the non-detoxification common exhaust system can exhaust the gas without using the detoxification means. Thereby, the burden on the exhaust device can be reduced.

  In the apparatus or the control method, when performing the particle reduction process in the processing chamber, the inert gas may be introduced at least by the second introduction system. The particle reduction process may include, for example, a roughing exhaust process that is exhausted at a high pressure and does not require detoxification of the exhaust. Thus, the exhaust can be performed without going through the detoxifying means. As a result, the burden on the abatement means for removing the exhaust gas can be reduced, and the energy and cost required for exhaust gas removal can be reduced. In addition, even when the inert gas is continuously introduced in the particle reduction process or when it is temporarily introduced, a predetermined flow rate of the inert gas is introduced by the second introduction system. The processing chamber can be cleaned by the gas shock wave generated below.

  In this case, first, the inert gas may be introduced at least by the second introduction system for a predetermined time, and thereafter, the inert gas may be supplied only by the first introduction system. Even if an inert gas having a large flow rate is temporarily introduced into the processing chamber for a predetermined time, a gas shock wave is generated under a predetermined condition, so that the processing chamber can be cleaned by the gas shock wave. Moreover, even if the exhaust gas is exhausted through the abatement means by the abatement common exhaust system, the inert gas is exhausted at a large flow rate in a short time, so that the burden on the abatement apparatus can be reduced.

  In order to solve the above problems, according to another aspect of the present invention, a plurality of processing chambers for performing a predetermined process by introducing a gas, exhaust systems provided in the respective processing chambers, A common exhaust system connecting at least two processing chamber exhaust systems among the exhaust systems of the processing chambers, wherein the common exhaust system removes exhaust from the exhaust systems of the processing chambers by an abatement means. Control of a substrate processing apparatus configured to be switchable between a detoxification common exhaust system that exhausts after the process and a non-detoxification common exhaust system that exhausts exhaust from the exhaust system of each processing chamber without going through the detoxification means A program for causing a computer to execute control for switching between the abatement common exhaust system and the non-abatement common exhaust system in accordance with the type of processing executed in each processing chamber. Provided. By executing such a program, the burden on the abatement means can be reduced.

  Further, in the above program, when processing is performed in parallel in the plurality of processing chambers connected to the common exhaust system, the program includes processing for switching the common exhaust system to the non-detoxifying common exhaust system. One of the first process and the second process comprising the process of switching the common exhaust system to the abatement common exhaust system and executing the process is performed in one of the plurality of process chambers. During this time, a predetermined exclusive control may be executed so that the other process is not executed in another process chamber among the plurality of process chambers. By executing such a program, it is possible to prevent the first process and the second process from being executed at the same time in different processing chambers. It is possible to prevent the exhaust from being exhausted without being detoxified.

  According to the present invention, it is possible to reduce the burden on the abatement means that removes exhaust gas, and it is possible to reduce energy and cost required for exhaust gas elimination. In addition, when processing is performed in parallel in a plurality of processing chambers, it is possible to prevent the non-detoxification common exhaust system and the detoxification common exhaust system from being switched in the middle, thereby reducing the burden on the detoxification means. While mitigating, it is possible to reliably prevent exhaust that needs to be removed without being exhausted.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(Configuration example of substrate processing equipment)
First, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 100 includes a processing unit 110 that performs various processes such as a film forming process and an etching process on a substrate to be processed such as a semiconductor wafer (hereinafter also simply referred to as “wafer”) W, and the processing unit 110. And a transfer unit 120 for transferring the wafer W in and out.

  First, a configuration example of the transport unit 120 will be described. As shown in FIG. 1, the transfer unit 120 has a transfer chamber 130 for transferring wafers between a substrate storage container, for example, a cassette container 132 (132 </ b> A to 132 </ b> C) described later and a processing unit 110. The transfer chamber 130 is formed in a box shape having a substantially polygonal cross section. A plurality of cassette bases 131 (131A to 131C) are arranged in parallel on one side surface constituting the long side of the polygonal section in the transfer chamber 130. Each of the cassette bases 131A to 131C is configured to be able to place cassette containers 132A to 132C as an example of a substrate storage container.

Each cassette container 132 (132A to 132C) can accommodate, for example, a maximum of 25 wafers W placed in multiple stages at an equal pitch, and the inside is a sealed structure filled with, for example, an N ₂ gas atmosphere. It has become. The transfer chamber 130 is configured such that the wafer W can be transferred into and out of the transfer chamber 130 via a gate valve. The number of cassette stands 131 and cassette containers 132 is not limited to the case shown in FIG.

  At the end of the transfer chamber 130, an orienter (pre-alignment stage) 136 as a positioning device is provided. In this orienter 136, for example, an orientation flat or notch of the wafer W is detected and alignment is performed.

  In the transfer chamber 130, for example, a transfer unit side transfer mechanism (transfer chamber transfer mechanism) 170 that transfers the wafer W along the longitudinal direction (the arrow direction shown in FIG. 1) by a linear drive mechanism is provided. The transport unit side transport mechanism 170 is driven based on a control signal from the control unit 400. The transport unit side transport mechanism 170 may be a double arm mechanism having two picks as shown in FIG. 1, or may be a single arm mechanism having only one pick.

  Next, a configuration example of the processing unit 110 will be described. For example, in the case of a cluster tool type substrate processing apparatus, the processing unit 110 is formed, for example, on a wafer W around a common transfer chamber 150 formed in a rectangular shape (for example, a hexagon) as shown in FIG. A plurality of processing chambers 200 (first to fourth processing chambers 200A to 200D) for performing predetermined processing such as plasma CVD processing and etching processing (for example, plasma etching processing) and load lock chambers 160M and 160N are connected in an airtight manner. Composed.

  Each of the processing chambers 200A to 200D has a gas introduction system 210A to 210D (not shown in FIG. 1) capable of introducing a predetermined gas such as a processing gas or a purge gas into each of the processing chambers 200A to 200D. Exhaust systems 220A to 220D that can be exhausted are connected. The configuration examples of the gas introduction system and the exhaust system will be described later.

  Moreover, the inside of each processing chamber 200A-200D is comprised as follows, for example. That is, the upper electrode and the lower electrode are disposed to face each other in each of the processing chambers 200A to 200D. The gas introduction system is connected to the upper electrode. The lower electrode also serves as a mounting table on which the wafer W is mounted. A high frequency power source for applying a predetermined high frequency power is connected to each of the upper electrode and the lower electrode.

  In each of the processing chambers 200A to 200D, for example, when the wafer W is loaded and placed on the lower electrode, it is brought into a predetermined vacuum pressure state by the exhaust processing by the exhaust system. Then, high-frequency power is applied to the upper electrode and the lower electrode, and the processing gas from the gas introduction system is uniformly introduced toward the wafer W through the upper electrode. As a result, the processing gas introduced from the upper electrode is turned into plasma, and the surface of the wafer W is subjected to, for example, an etching process.

  The processing of the wafer W in each of the processing chambers 200A to 200D is performed based on wafer processing information such as a process / recipe indicating a processing step or the like stored in advance in a storage unit of the control unit 400, for example. Wafer processing information varies depending on the type and conditions of wafer processing. The number of processing chambers 200 is not limited to the case shown in FIG.

  The common transfer chamber 150 carries wafers W in and out between the processing chambers 200A to 200D as described above, or between the processing chambers 200A to 200D and the first and second load lock chambers 160M and 160N. It has a function. The common transfer chamber 150 is formed in a polygonal shape (for example, a hexagonal shape), and the processing chambers 200 (200A to 200D) are connected to each other through a gate valve around the common transfer chamber 150. The tips of the lock chambers 160M and 160N are connected to each other via a gate valve (vacuum side gate valve). The base ends of the first and second load lock chambers 160M and 160N are connected to the other side surface of the transfer chamber 130 via gate valves (atmosphere side gate valves), respectively.

  The first and second load lock chambers 160M and 160N have a function of temporarily holding the wafer W and adjusting the pressure to pass to the next stage. In each of the first and second load lock chambers 160M and 160N, a delivery table on which the wafer W can be placed is provided.

  In such a processing unit 110, as described above, between the common transfer chamber 150 and the processing chambers 200A to 200D and between the common transfer chamber 150 and the load lock chambers 160M and 160N can be opened and closed in an airtight manner. It is configured as a cluster tool, and can communicate with the inside of the common transfer chamber 150 as necessary. The first and second load lock chambers 160M and 160N and the transfer chamber 130 are also configured to be openable and closable.

  In the common transfer chamber 150, for example, a processing unit-side transfer mechanism (common transfer chamber transfer mechanism) 180 including an articulated arm configured to be able to bend, extend, move up and down, and turn is provided. The processing unit side transport mechanism transports the wafer W between the load lock chambers 160M and 160N and the processing chambers 200A to 200D. The processing unit side transport mechanism 180 is driven based on a control signal from the control unit 400. Note that the processing unit-side transport mechanism 180 may be a double arm mechanism having two picks as shown in FIG. 1 or a single arm mechanism having only one pick.

  The substrate processing apparatus 100 is provided with a control unit 400 that controls the operation of the entire substrate processing apparatus, including control of the transfer unit side transfer mechanism 170, the processing unit side 180, each gate valve, the orienter 136, and the like. A configuration example of such a control unit 400 will be described later.

  Further, the substrate processing apparatus 100 is provided with a common detoxifying apparatus 300 for detoxifying (detoxifying) the exhaust gas in each of the processing chambers 200A to 200D. The abatement apparatus 300 is connected to a common exhaust system 310 that connects the exhaust systems 220A to 220D in the processing chambers 200A to 200D. The common exhaust system 310 is connected to an exhaust system of a factory where the substrate processing apparatus 100 is installed, for example, via the abatement apparatus 300.

  When the substrate processing apparatus 100 configured as described above is operated, the processing of the wafer W is started. For example, the wafer W is unloaded from one of the cassette containers 132 </ b> A to 132 </ b> C by the transfer unit side transfer mechanism 170 and transferred to the orienter 136. Then, the wafer W positioned by the orienter 136 is unloaded from the orienter 136 and loaded into the load lock chamber 160M or 160N. At this time, if the process completion wafer W in which all necessary processes have been completed is in the load lock chamber 160M or 160N, the process completion wafer W is unloaded and then the unprocessed wafer W is loaded.

  The wafer W loaded into the load lock chamber 160M or 160N is unloaded from the load lock chamber 160M or 160N by the processing unit side transfer mechanism 180, and is loaded into the processing chamber 200 where the wafer W is processed to execute a predetermined process. Is done. Then, the processed wafer W that has been processed in the processing chamber 200 is unloaded from the processing chamber 200 by the processing unit-side transfer mechanism 180. In this case, when the wafer W needs to be processed in a plurality of processing chambers 200 in succession, the wafer W is loaded into another processing chamber 200 that performs the next processing, and the processing in the processing chamber 200 is performed. Executed.

  Then, the processed wafer after completion of all necessary processes is returned to the load lock chamber 160M or 160N. The processed wafer W returned to the load lock chamber 160M or 160N is returned to the original cassette containers 132A to 132C by the transfer unit side transfer mechanism 170.

  Thus, while the substrate processing apparatus 100 is operating, the exhaust discharged from the exhaust systems 220A to 220D of the processing chambers 200A to 200D is exhausted from the common exhaust system 310 to, for example, the factory exhaust system via the abatement apparatus 300. Is done.

  Here, a configuration example of the piping of each of the processing chambers 200A to 200D and a configuration example of the abatement apparatus 300 will be described with reference to the drawings. FIG. 2 is a block diagram illustrating a configuration example of the piping of each of the processing chambers 200A to 200D and a configuration example of the abatement apparatus 300. Since the example of the piping configuration of each of the processing chambers 200A to 200D is the same, the following description will be made representatively by omitting A to D from the reference numerals indicating the components of the processing chambers 200A to 200D. Therefore, for example, the processing chamber 200 indicates the processing chambers 200A to 200D.

(Pipe configuration example of processing chamber)
First, the piping configuration (gas introduction system and exhaust system) of the processing chamber 200 will be described. As shown in FIG. 2, the processing chamber 200 includes a pressure sensor 280 that detects the pressure in the processing chamber 200, a gas introduction system 210 that can introduce a predetermined gas such as processing gas and purge gas into the processing chamber 200, and the processing chamber 200. An exhaust system 220 for exhausting the inside is provided.

The gas introduction system 210 is configured, for example, by connecting a gas supply source 212 to the processing chamber 200 via a gas introduction valve (gas introduction valve) 214. Examples of the gas introduced from the gas supply source 212 into the processing chamber 200 include PFC gas (CF ₄ , C ₂ F _6, etc.) that is a substance that promotes global warming, NF ₃ , SF ₆ containing harmful components, In addition to a processing gas that requires exhaust gas detoxification, such as NH ₃ , NO _x , hydrogen halide, and heavy metal alkoxide complex, an inert gas used for a purge gas, a pressure adjusting gas, or the like can be used. In this specification, the inert gas refers to a gas that hardly causes chemical changes, and includes not only rare gas group elements such as Ar gas and He gas but also N ₂ gas. The gas introduction system 210 is not limited to the configuration shown in FIG. For example, a flow rate control means such as a mass flow controller or a backflow prevention valve may be provided on the downstream side of the gas introduction valve.

  The exhaust system 220 is configured, for example, by connecting a main exhaust system 230 and an auxiliary exhaust system 240 to the processing chamber 200 in parallel. The main exhaust system 230 and the auxiliary exhaust system 240 merge on the exhaust side and are connected to the auxiliary pump 250. A main pump 260 is connected to the main exhaust system 230, and a switching valve (switching valve, auxiliary valve) 270 for switching between exhaust from the main exhaust system 230 and exhaust from the auxiliary exhaust system 240 is connected to the auxiliary exhaust system 240. is doing. The main pump 260 of the main exhaust system 230 is connected to the processing chamber 200 via a pressure control valve (APC) (not shown).

  The auxiliary pump 250 is constituted by, for example, a dry pump, and roughing exhaust processing for exhausting the processing chamber 200 to a certain vacuum state is performed by the auxiliary pump 250. The main pump 260 is constituted by a turbo pump, for example, and the main pump 260 performs a main exhaust process for exhausting the inside of the processing chamber 200 to a desired high vacuum pressure. The auxiliary pump 250 of the exhaust system 220 has an exhaust side connected to the abatement apparatus 300 via the common exhaust system 310. The exhaust system 220 is not limited to the configuration shown in FIG. 2 as long as at least rough exhaust processing can be performed.

  The pressure sensor 280 is constituted by, for example, a diaphragm vacuum gauge (capacitance manometer, etc.). The output from the pressure sensor 280 is supplied to the control unit 400 of the substrate processing apparatus 100. The gas introduction valve 214 of the gas introduction system 210 and the switching valve 270 of the exhaust system 220 are each controlled by a control signal from the control unit 400.

(Operation example of gas introduction system and exhaust system)
When processing the wafer W in the processing chamber 200 having such a configuration, first, the inside of the processing chamber 200 is decompressed to a predetermined pressure by performing a vacuuming process with the gate valve of the processing chamber 200 closed. The evacuation process is performed, for example, by a rough evacuation process for reducing the pressure to a predetermined pressure and a main evacuation process for reducing the pressure from the predetermined pressure to a set pressure of a higher vacuum.

  Specifically, first, the switching valve 270 is opened to make the exhaust system 220 the auxiliary exhaust system 240, and the auxiliary pump 250 is driven to perform roughing exhaust processing. When a predetermined pressure is detected by the pressure sensor 280, the switching valve 270 is closed to make the exhaust system 220 the main exhaust system 230, and the main pump 260 is driven to detect the set pressure by the pressure sensor 280. The main exhaust process is performed.

  When the main evacuation process is completed, the gate valve is opened and the wafer W is loaded into the process chamber 200. When the wafer W is mounted on the mounting table, the gate valve is closed and the process proceeds to the wafer W processing step. In this case, the processing gas from the gas supply source 212 is introduced into the processing chamber 200 by opening the gas introduction valve 214 with the switching valve 270 closed and the exhaust system 220 set to the main exhaust system 230. Thus, processing of the wafer W is started. That is, the wafer W is processed for a predetermined time while the pressure in the processing chamber 200 is maintained at a predetermined pressure based on the pressure from the pressure sensor 280, for example.

  When the processing of the wafer W is completed, the gas introduction valve 214 is closed, the exhaust in the processing chamber 200 is exhausted from the main exhaust system 230, and the processed wafer W is unloaded from the processing chamber 200. Thus, processing of one wafer W is completed. Thereafter, the next wafer W is loaded into the processing chamber 200, and the wafers W are sequentially processed one by one in the same procedure as described above. Exhaust gas discharged from the exhaust system 220 of the processing chamber 200 when processing such a wafer W is exhausted from the common exhaust system 310 to, for example, an exhaust system of a factory through the abatement apparatus 300.

(Configuration example of abatement device)
Next, a configuration example of the abatement apparatus will be described. The abatement apparatus 300 is connected to the common exhaust system 310. Specifically, the common exhaust system 310 includes, for example, a detoxification common exhaust system 320 that exhausts the exhaust from the processing chamber 200 after detoxifying (detoxifying) the exhaust from the processing chamber 200 and the exhaust from the processing chamber 200. Is branched to a non-detoxification common exhaust system 330 that exhausts without detoxifying (detoxification).

  An abatement means 340 for detoxifying (detoxifying) the exhaust from the common exhaust system 310 is connected to the abatement common exhaust system 320, and the non-detoxification common exhaust system 330 is connected to the abatement common exhaust system 320. A switching valve (switching valve) 350 for switching between exhaust and exhaust from the non-detoxification common exhaust system 330 is connected. The exhaust side of the detoxification common exhaust system 320 and the non-detoxification common exhaust system 330 merge and are connected to, for example, a factory exhaust system.

  The abatement means 340 is constituted by, for example, an abatement reaction vessel that abatements exhaust gas passing through the abatement common exhaust system 320 by heat treatment. The abatement means is not limited to that by heat treatment, and various configurations can be applied. The switching valve 350 of the abatement apparatus is controlled by a control signal from the control unit 400. The control unit 400 performs switching control of the switching valve 350 of the abatement apparatus 300 according to the type of processing performed in the processing chamber 200.

(Operation example of the abatement device)
Next, an operation example of the abatement apparatus configured as described above will be described with reference to the drawings. First, a case where only one processing chamber performs exhaust using the abatement apparatus 300 will be described. Here, a case where the processing chamber 200A uses the abatement apparatus 300 on behalf of the processing chambers 200A to 200D will be described. 3 and 4 are diagrams for explaining the flow of exhaust (thick arrow) when only the processing chamber 200A performs exhaust using the abatement apparatus 300. FIG.

  As described above, the switching valve 350 of the detoxifying apparatus 300 can be switched between exhaust by the detoxification common exhaust system 320 and exhaust by the non-detoxification common exhaust system 330 according to the type of processing performed in the processing chamber 200A. . According to this, for example, when performing the roughing exhaust process in the processing chamber 200A as described above, the switching valve 350 of the detoxification apparatus 300 is opened as shown in FIG. When performing processing of the wafer W by introducing other processing, for example, processing gas, as shown in FIG. 4, the switching valve 350 of the detoxifying apparatus 300 is used. Can be exhausted after being removed by switching to exhaust by the common exhaust system 320.

  Since the processing gas is not yet introduced in the normal roughing exhaust processing when processing the wafer W, exhaust gas containing harmful components is not discharged from the processing chamber 200A. There is no problem even if it exhausts without. In addition, if exhaust is performed through the abatement means 340 of the abatement apparatus 300 as well as exhaust due to a process from a high pressure state such as the roughing exhaust process from the atmospheric pressure, the burden on the abatement apparatus 300 increases. Since such processing can also be exhausted without going through the abatement means 340, the burden on the abatement apparatus 300 can be reduced and the life of the abatement apparatus 300 can be extended. In addition, since the efficiency of the abatement process can be improved, the energy required for the abatement process can be reduced, and even a small capacity abatement apparatus can be used in each treatment chamber. 300 can be applied.

  By the way, as processing of the processing chamber 200A, in addition to the processing of the normal wafer W as described above, for example, maintenance processing by an operator, improvement of work efficiency of periodic maintenance, reduction of working time, etc. There is an automatic inspection process (auto check process) for automatically inspecting each part of the apparatus 100. The automatic inspection process (auto check process) here includes an auto setup process and a self check process, and each inspection item includes an inspection of the gas introduction system 210A and the exhaust system 220A of the processing chamber 200A. Therefore, in such a maintenance process and an auto check process, the roughing exhaust process of the process chamber 200 as described above may be performed.

  In particular, in the case of auto-check processing in the processing chamber 200A, for example, processing gas is introduced by so-called build-up processing in which processing gas is introduced from the gas introduction system 210A and the pressure is increased to a predetermined pressure while monitoring the pressure by the pressure sensor 280A. Later, roughing exhaust processing may be performed. In such a case, since the processing gas is exhausted in spite of the rough exhaust processing, if the processing gas contains a harmful component, it is necessary to exhaust the exhausted gas. As described above, some roughing exhaust processing in the processing chamber 200A exhausts exhaust gas containing harmful components.

  In this case, if the roughing exhaust process is performed, the switching valve 350 of the detoxifying device 300 is automatically operated by the non-detoxifying common exhaust system 330 in conjunction with the switching valve 270A that is opened to switch to the auxiliary exhaust system 240A. If switched to exhaust, exhaust containing harmful components may be exhausted to the factory exhaust system without being detoxified.

  Therefore, in the present invention, the switching valve 350 is controlled by the control unit 400 of the substrate processing apparatus 100 as follows, for example, instead of being interlocked with the switching valve 270A. That is, it is determined whether or not the process executed in the processing chamber 200A in the control unit 400 is a process executed from at least a high pressure state (for example, a predetermined pressure or higher) that does not require exhaust gas removal. 3 is opened, the switching valve 350 of the detoxifying apparatus 300 is opened to make the common exhaust system 310 a non-detoxifying common exhaust system 330 and exhausted without detoxification, and a high pressure state is obtained. If it is determined that the processing is not executed from (for example, a predetermined pressure or higher), the common exhaust system 310 is removed from the common exhaust system 320 by closing the switching valve 350 of the removal apparatus 300 as shown in FIG. Exhaust after exhausting.

  In this case, whether or not the processing is performed from a high pressure state (for example, a predetermined pressure or higher) is detected by detecting the pressure in the processing chamber 200A by the pressure sensor 280A when the processing in the processing chamber 200A is executed, for example. If the pressure is equal to or higher than a predetermined pressure (for example, 50 Torr [66.6 hPa]), it is determined that the processing is from a high pressure state. If the pressure is lower than the predetermined pressure (for example, 50 Torr), it is determined that the processing is from a low pressure state.

  According to such control, for example, the roughing exhaust processing from the atmospheric pressure state in the processing chamber 200 is processing that does not require detoxification and processing from a high pressure state. It is exhausted without being harmed by the harm common exhaust system 330.

  On the other hand, since the exhaust process in the maintenance process and the auto check process is a process executed at a low pressure state, even in the same rough exhaust process, such an exhaust process has a common abatement system. After being detoxified by 320, it is exhausted. Further, since the processing of the wafer W accompanied by the introduction of the processing gas is processing performed at a low pressure state that requires exhaust gas detoxification, such processing is also performed after detoxification by the detoxification common exhaust system 320. Exhausted.

  Thereby, it is possible to reliably prevent the exhaust gas containing harmful components from being exhausted from the abatement apparatus 300 to the exhaust system of the factory. Moreover, with regard to the rough evacuation process and the wafer W process performed from such a low pressure state, even if evacuation is performed via the abatement means 340, the detoxification process is less than that of the rough evacuation process from the high pressure state. The burden on the apparatus 300 can be reduced.

  Next, an operation example of the abatement apparatus when processing is performed in parallel in a plurality of processing chambers will be described with reference to the drawings. Here, the case where processing is performed in parallel in the processing chambers 200A and 200B will be described on behalf of the processing chambers 200A to 200D. 5 to 8 are diagrams for explaining the flow of exhaust gas (thick arrows) when processing is performed in parallel in the processing chambers 200A and 200B.

  As described above, in the present invention, when the process executed in the processing chambers 200A and 200B is a process executed at least from a high pressure state (for example, a predetermined pressure or higher) that does not require exhaust gas removal, the common exhaust system 310 is used. Is switched to the non-detoxification common exhaust system 330, and in other processes, the common exhaust system 310 is switched to the detoxification common exhaust system 320.

  Therefore, when processing is performed in parallel in a plurality of processing chambers, the common exhaust system 310 is switched to the non-detoxifying common exhaust system 330 in different processing chambers depending on the processing timing in each processing chamber. In some cases, the first process that is performed and the second process that is performed by switching the common exhaust system 310 to the abatement common exhaust system 320 are performed simultaneously. In this case, if the first process is started in another process chamber while the second process is being performed in a certain process chamber, that is, while the exhaust by the abatement common exhaust system 320 is being performed, the non-exclusion is performed. It will be switched to the exhaust by the harm common exhaust system 330. In this case, the exhaust that needs to be removed in a certain processing chamber is exhausted through the non-detoxifying common exhaust system 330, so that there is a problem that it is exhausted to the factory exhaust system without being removed.

  For example, as shown in FIG. 5, while the processing by the detoxification common exhaust system 320 is being performed in the processing chamber 200B by the processing of the wafer W while introducing the processing gas by the second processing, for example, the gas introduction system 210B, FIG. As shown in FIG. 1, when the first process, for example, the coarse exhaust process from the atmospheric pressure, is performed in another process chamber 200A, the switching valve 350 of the detoxifying device 300 is opened and exhausted by the non-detoxifying common exhaust system 330. Switched. Therefore, as shown in FIG. 6, the exhaust gas that needs to be removed from the processing chamber 200 </ b> A is exhausted to the factory exhaust system without being removed by the non-detoxification common exhaust system 330.

  On the contrary, as shown in FIG. 8, while exhausting by the non-detoxification common exhaust system 330 is being performed in the processing chamber 200B as shown in FIG. When the wafer W is processed in the second processing chamber 200A while introducing the processing gas, for example, by the gas introduction system 210B, the switching valve 350 of the abatement apparatus 300 is closed and the abatement common exhaust system. 320 is switched to exhaust by 320. In this case, although there is no inconvenience that exhaust that needs to be removed from the processing chamber 200A is not removed by the non-detoxifying common exhaust system 330, it is not inconvenienced, but the high pressure state of the processing chamber 200B Since the exhaust gas is exhausted through the abatement means 340 by the abatement common exhaust system 320, the burden on the abatement apparatus 300 increases.

  Therefore, in the present invention, when processing is performed in parallel in a plurality of processing chambers, any one of the first processing and the second processing is performed in one processing chamber. , Predetermined exclusive control is performed so that the other process is not executed in all other processing chambers. As a result, even when processing is performed in parallel in a plurality of processing chambers, processing that does not require exhaust gas elimination and processing that requires exhaust gas exhaustion are performed simultaneously in different processing chambers. Therefore, while reducing the burden on the abatement apparatus 300, it is possible to reliably prevent the exhaust gas that needs to be removed from being exhausted to the exhaust system of the factory without being removed.

(Configuration example of control unit that performs exclusive control)
Next, a control unit that performs the exclusive control as described above will be described. Such exclusive control is performed by, for example, the control unit 400 that controls the substrate processing apparatus 100. Therefore, a specific configuration example of the control unit 400 will be described below with reference to FIG.

  As shown in FIG. 9, the control unit 400 includes a CPU (central processing unit) 410 constituting the control unit main body, program data for the CPU 410 to control each unit (for example, processing of the wafer W, various checks of the substrate processing unit described later) ROM (Read-Only Memory) 420 storing processing, removal rights use right processing, particle reduction processing program data, etc., and a memory area used for various data processing performed by the CPU 410 are provided. RAM (Random Access Memory) 430, time counting means 440 constituted by a counter for measuring time, display means 450 constituted by a liquid crystal display for displaying an operation screen, a selection screen, etc., various data by an operator Input / output means 460 capable of performing input / output, such as an alarm device such as a buzzer Configured notification unit 470 includes various controllers 480, storage unit 490 composed for example a memory or the like for controlling each part of the substrate processing apparatus 100.

  The CPU 410, the ROM 420, the RAM 430, the timing means 440, the display means 450, the input / output means 460, the notification means 470, the various controllers 480, and the storage means 490 are electrically connected by a bus line such as a control bus, a system bus, a data bus or the like. It is connected.

  The various controllers 480 include controllers for the transfer mechanisms 170 and 180 and the orienter 136, a controller for controlling each part of the processing chambers 200 </ b> A to 200 </ b> D, switching of the gas introduction valve 214 and the exhaust system 220 of the gas introduction system 210. A valve controller that controls the valve 270, the switching valve 350 of the abatement apparatus, and the like is also included. In addition, you may make it control each part of each process chamber 200A-200D by providing a control part for each process chamber 200A-200D. In this case, the control unit 400 is connected to the control units of the processing chambers 200A to 200D, and controls the substrate processing apparatus 100 while exchanging data and signals.

  The storage means 490 stores processing status management information 492 for storing the processing status of whether or not the first processing and the second processing are being executed in each of the processing chambers 200A to 200D, and executes the first processing and the second processing. Therefore, abatement device use right reservation information (common exhaust system use right reservation information) 494 for storing reservation information for securing the use right of the abatement device 300 is stored.

  Here, a specific example of the processing status management information 492 will be described with reference to FIG. For example, as shown in FIG. 10, the processing status management information 492 includes a data table having processing chambers, first processing items, second processing items, and the like. The item of the processing chamber indicates the type of each of the processing chambers 200A to 200D that the substrate processing apparatus 100 has. The items of the first process and the second process indicate whether or not the first process and the second process are being performed in each process chamber.

  In the items of the first process and the second process, for example, “1” is set (stored) when the process is started in each of the process chambers 200A to 200D, and “0” is set (stored) when the process is completed. ) Therefore, when the first process (or the second process) is “0”, it indicates that the first process (or the second process) is not executed in the processing chamber, and the first process (or the second process) is performed. When “Process” is “1”, this indicates that the first process (or the second process) is being performed in the process chamber.

  For example, according to the example shown in FIG. 10, the processing chambers 200A, 200C, and 200D are both “0” in the items of the first processing and the second processing, so that the processing chambers 200A, 200C, and 200D are the first processing and the second processing. It can be seen that the process is not being executed. On the other hand, in the processing chamber 200B, since the item of the first process is “1” and the item of the second process is “0”, the processing chamber 200B does not execute the second process. It can be seen that the process is being executed.

  According to such processing status management information 492, since the processing status of the first processing and the second processing in each of the processing chambers 200A to 200D can be known, this processing is performed when the first processing and the second processing are performed in each processing chamber. Based on the status management information 492, it is possible to easily determine whether or not the first process and the second process are being performed in another process chamber.

The processing status management information 492 need not be stored in the data table as shown in FIG. 10, for example, flags F _{A1 to} F _D1 indicating the processing statuses of the first processing and the second processing for the processing chambers 200A to 200D, respectively. , Flags F _{A2 to} F _D2 may be provided, and “0” and “1” may be set to these flags F _{A1 to} F _D1 and flags F _{A2 to} F _D2 in the same manner as described above.

Next, a specific example of the abatement apparatus usage right reservation information 494 will be described with reference to FIG.
The abatement apparatus use right reservation information 494 is configured by a data table having, for example, processing chambers, processing type items, and the like as shown in FIG. The item of the processing chamber indicates the type of each processing chamber 200A to 200D that the substrate processing apparatus 100 has. The type of process item indicates a process (first process or second process) executed by reserving the right to use the abatement apparatus.

  When the first process or the second process of each of the processing chambers 200A to 200D is reserved in the abatement apparatus use right reservation information 494, it is sequentially stored in the data table of the abatement apparatus use right reservation information 494. Accordingly, each row of the data table of the abatement apparatus usage right reservation information 494 indicates a reserved process (job).

  The abatement apparatus usage right reservation information 494 is stored in the other process chamber because one of the first process and the second process is executed by the exclusive control of the first process or the second process. When the above process cannot be executed, the right to use the abatement apparatus 300 (common exhaust system 310) is reserved when the other process is executed later.

  Such usage rights of the abatement apparatus 300 are acquired in the order reserved in the abatement apparatus usage right reservation information 494. Therefore, when the other process in the other processing chamber is completed, the processes (jobs) are executed in the order stored in the data table of the abatement apparatus usage right reservation information 494. Then, the reservation order is advanced in the order in which the processes are executed.

  For example, according to the example shown in FIG. 11, since the first process in the processing chamber 200A is reserved first, this process is executed first. When the first reserved process is executed, the second reserved 200C first process is advanced to the first order.

  Further, the reservation by the abatement apparatus use right reservation information 494 can be canceled by operating the input / output means 460 of the control unit 400 by the operator, for example. In addition, when the processing in the processing chamber waiting for processing is interrupted due to the reservation, the reservation by the abatement apparatus usage right reservation information 494 is also canceled. When the reservation is canceled in this way, the order of the remaining reservations is sequentially advanced.

  Such processing is executed by making the data table of the abatement apparatus usage right reservation information 494 into a data structure like a queue table for performing first-in first-out (FIFO) control, for example. You may do it.

(Specific example of exclusive control of first process and second process)
Next, a specific example of exclusive control of the first process and the second process executed by the control unit 400 configured as described above will be described. Here, the process for switching the common exhaust system 310 to the non-detoxifying common exhaust system 330 and executing the process while switching the common exhaust system 310 to the detoxifying common exhaust system 320 is the second process.

The first process includes, for example, a rough exhaust process from a high pressure state (for example, a pressure state of 50 Torr or higher), an auto check process including such a rough exhaust process, a maintenance process, and a rough exhaust process. Cleaning process (for example, a particle reduction process (NPPC: Non-Plasma) that cleans the processing chamber by introducing purge gas (or inert gas))
Also called Particle Cleaning. )) Is also included. The particle reduction processing, for example, other particle reduction processing for removing by Maiagara processing chamber particles by repeating the air release and vacuum while introducing a purge gas such as N ₂ gas into the processing chamber, such as N ₂ gas Examples include particle reduction processing that removes particles in the processing chamber by peeling them with a gas shock wave (Shock Wave: pressure wave transmitted beyond the speed of sound) by introducing purge gas into the processing chamber at a large flow rate. . Further, in the particle reduction processing by the gas shock wave, as will be described later, when a large flow rate of purge gas is continuously introduced into the processing chamber and exhausted (for example, when it is executed with a piping configuration as shown in FIG. 14), A case where the purge gas is temporarily introduced into the processing chamber and then exhausted while continuing to introduce the purge gas at a low flow rate (for example, a case where the purge gas is executed by a piping configuration as shown in FIG. 17) may be mentioned.

  In the second process, for example, a process process for the wafer W such as an etching process or a film forming process, or a cleaning process performed by introducing a process gas (for example, while introducing a process gas without a wafer in the process chamber) Opening process of the gas introduction valve 214 for introducing a processing gas in a wafer rescreening process for cleaning the processing chamber, rough exhausting process from a low pressure state, introduction of such a processing gas or a low pressure state (for example, An auto check process including a rough exhaust process from a pressure state lower than 50 Torr) and a maintenance process are also included.

(Specific example of control when executing the first process)
First, a specific example of control in the case where the first processing (for example, roughing exhaust processing from a high pressure state) is executed in each of the processing chambers 200A to 200D will be described. FIG. 12 is a flowchart showing a specific example of control when the first process is executed. As shown in FIG. 12, when the first process is executed in each process chamber, first, exclusive control (steps S100 to S150) is performed, and then the first process is started (steps S160 to S190). .

  In such exclusive control, first, in step S100, it is determined whether there is a processing chamber waiting for reservation processing. Specifically, it is determined whether there is a process (job) already reserved in the table of the abatement apparatus usage right reservation information 494. This is because if there is a process in another processing chamber that has already been reserved in the table of the abatement apparatus usage right reservation information 494 and is waiting to be processed, it is given priority.

  If it is determined in step S100 that there is a processing room waiting for reservation processing, that is, there is a process (job) reserved in the table of the abatement apparatus usage right reservation information 494, the display unit 450 causes the display unit 450 to execute the process. A display indicating that one process cannot be executed is displayed, and the process proceeds to a reservation process to be described later in step S130. This is to prevent the first process and the second process from being performed simultaneously in different process chambers. In this case, for example, notification by the notification unit 470 may be performed to notify the operator that the first process cannot be executed.

  If it is determined in step S100 that there is no processing chamber waiting for reservation processing, that is, there is no processing (job) reserved in the table of the abatement apparatus usage right reservation information 494, another processing chamber is determined in step S110. It is then determined whether or not the second process is being executed. This is to prevent the first process and the second process from being performed simultaneously in different process chambers. Specifically, the determination is made based on the processing status management information 492 in the storage unit 490. For example, according to the example of the processing status management information 492 shown in FIG. 10, since the items of the second processing in each of the processing chambers 200A to 200D are all “0”, the second processing is executed in each of the processing chambers 200A to 200D. It can be judged that it is not.

  If it is determined in step S110 that the second process (for example, the process process of the wafer W) is not being performed in another process chamber, the process proceeds to the process after step S160, and the first process is started. On the other hand, if it is determined in step S110 that the second process is being performed in another processing chamber, the display means 450 displays that the first process cannot be performed in step S120. At this time, for example, notification by the notification unit 470 may be performed to notify the operator that the first process cannot be performed.

  Subsequently, a reservation process is performed in steps S130 to S150. In the reservation process, first, in step S130, the right to use the abatement apparatus 300 is reserved. Specifically, the right to use the abatement apparatus 300 (common exhaust system 310) is reserved in the data table of the abatement apparatus use right reservation information 494 in the storage means 490.

  Next, in step S140, it is determined whether or not the second process has been completed in another process chamber. Specifically, the determination is made based on the processing status management information 492 in the storage unit 490. For example, according to the processing status management information 492, when the second processing in another processing chamber is completed, the item of the second processing in the other processing chamber is changed from “1” to “0”, so that item is “0”. If it is changed to, it can be determined that the second process is completed in another process chamber. If it is determined in step S140 that the second process is not completed in another process chamber, the process waits until the second process is completed in the other process chamber.

  If it is determined in step S140 that the second process in the other processing chamber has been completed, it is determined in step S150 whether the right to use the abatement apparatus 300 has been acquired. Specifically, the determination is made in the order reserved in the abatement apparatus usage right reservation information 494. When determining whether or not the right to use the abatement apparatus 300 has been acquired, it is determined, for example, by the processing status management information 492 whether or not the second process is being executed in another process chamber, and another process chamber is determined. If it is determined that the second process has not been executed, it is determined that the right to use the abatement apparatus 300 has been acquired, and the process proceeds to step S160 and subsequent steps to start the first process.

  On the other hand, when it is determined that the second process is being performed in another processing chamber, it is determined that the right to use the abatement apparatus 300 could not be acquired, and the right to use the abatement apparatus 300 can be acquired. wait. This is because when the second process is executed in parallel in different process chambers, it is not subject to exclusive control. Therefore, even when the second process is being executed in another process chamber, In this case, the second process may be started, so that the first process is not performed in such a case. By performing such reservation processing, it is possible to automatically execute processing in the processing chamber in the processing waiting state.

  Next, a case where the first process is started will be described. When starting the first process, first, the first process start information is recorded in step S160. Specifically, for example, “1” is set (stored) in the item of the first process in the data table of the process status management information 492.

  Next, a first process is executed in step S170. The first process (for example, the rough exhaust process from a high pressure state) is performed by switching the common exhaust system 310 to the non-detoxifying common exhaust system 330 by opening the switching valve 350 of the detoxification apparatus 300. Thereby, the exhaust discharged from the processing chamber is exhausted as it is, for example, to the exhaust system of the factory without passing through the detoxifying means 340.

  Next, in step S180, it is determined whether or not the first process is finished. If it is determined in step S180 that the first process has been completed, the first process end information is recorded in step S190. Specifically, for example, “0” is set (stored) in the first processing item in the data table of the processing status management information 492. In this way, a series of 1st processes including exclusive control with a 2nd process are complete | finished.

  According to such control when executing the first process according to the present embodiment, the second process (for example, the process process of the wafer W accompanied by exhaust that needs to be removed) is executed in any of the processing chambers. During this time, the first process (for example, roughing exhaust process that does not require detoxification) is not performed in all other processing chambers. Therefore, while the second process is performed in any of the processing chambers and the detoxification apparatus 300 performs the detoxification exhaust by the detoxification common exhaust system 320, the detoxification apparatus 300 is in the middle of non-detoxification. There is no switching to non-exhaust exhaust by the exhaust system 330. Thereby, it is possible to prevent the exhaust gas that needs to be removed from being exhausted without being removed by the removal device 300.

  For example, as shown in FIG. 5, during the second processing, for example, the processing of the wafer W that needs to be exhausted is performed in the processing chamber 200 </ b> B, and the exhausting is performed through the removing unit 340 of the removing device 300. In the other processing chamber, for example, the processing chamber 200A, the first processing, for example, rough exhaust processing from the atmospheric pressure state that does not require exhaust gas detoxification is not performed. Therefore, as shown in FIG. 6, the switching valve 350 of the abatement apparatus 300 is not opened during the second process in the process chamber 200B, so that the exhaust from the process chamber 200B is detoxified by the abatement apparatus 300. It is possible to prevent exhaust without being exhausted.

  In addition, while a certain processing chamber is performing the second processing, for example, the processing of the wafer W, in the other processing chamber, the first processing, for example, the auto check processing including roughing exhaust processing from the atmospheric pressure state and the maintenance processing are performed. Not done.

  In this case, as described above, the entire auto-check process and maintenance process may not be executed as the first process, and rough exhaust from the atmospheric pressure state in the auto-check process and maintenance process may be avoided. Only the processing portion may be set as the first processing and not executed alone. This is because the detoxification apparatus 300 is not removed unless at least the rough evacuation process from the atmospheric pressure state is simultaneously performed in another process chamber while the process of the wafer W as the second process is being performed in a certain process chamber. This is because it is not possible to switch to the harm common exhaust system 330, and it is possible to prevent the exhaust that needs to be removed from being exhausted without being removed by the abatement apparatus 300.

  Therefore, in such a case, while the processing of the wafer W as the second processing is being executed in a certain processing chamber, the execution of the auto check processing and maintenance processing can be started in another processing chamber. Exclusive control is performed at the stage of executing the rough exhaust process from the atmospheric pressure state, and the rough exhaust process cannot be executed.

  In the specific example of the first process including the exclusive process shown in FIG. 12, the exclusive control is not performed when the first process (for example, the rough exhaust process from the atmospheric pressure state) is performed in different process chambers. Therefore, the case where the first process is simultaneously performed in each process chamber may occur. In this case, since no exhaustion is required for any exhaust from different processing chambers, there is no problem even if exhaust is performed by the abatement apparatus 300 without passing through the abatement means 340.

  However, when the first processing (for example, roughing exhaust processing from the atmospheric pressure state) is performed in different processing chambers, the pressure state in the processing chamber varies depending on the start timing of the first processing in each processing chamber. There may be. In such a case, a backflow of exhaust gas may occur from the processing chamber having a high pressure to the processing chamber having a low pressure. Accordingly, exclusive control may be performed even when the first process is performed in different process chambers. In this case, for example, the second process in FIG. 12 may be replaced with the first process. As a result, it is possible to prevent the first processing from being performed simultaneously in different processing chambers, and thus it is possible to reliably prevent the backflow of exhaust gas into each processing chamber.

(Specific example of control when executing the second process)
First, a specific example of control when the second process (for example, the process process of the wafer W) is executed in each of the process chambers 200A to 200D will be described. FIG. 13 is a flowchart illustrating a specific example of control when the second process is executed. As shown in FIG. 13, when the second process is executed in each processing chamber, first, after performing exclusive control (steps S200 to S250), the second process is started (steps S260 to S290). .

  In such exclusive control, first, in step S200, it is determined whether there is a processing chamber waiting for reservation processing. Specifically, it is determined whether there is a process (job) already reserved in the table of the abatement apparatus usage right reservation information 494. This is because if there is a process in another processing chamber that has already been reserved in the table of the abatement apparatus usage right reservation information 494 and is waiting to be processed, it is given priority.

  If it is determined in step S200 that there is a processing room waiting for reservation processing, that is, there is a process (job) reserved in the table of the abatement apparatus usage right reservation information 494, the display means 450 uses the display means 450 in step S220. 2 A display indicating that the process cannot be executed is performed, and the process proceeds to a reservation process to be described later after step S230. This is to prevent the first process and the second process from being performed simultaneously in different process chambers. In this case, for example, notification by the notification unit 470 may be performed to notify the operator that the second process cannot be executed.

  If it is determined in step S200 that there is no processing room waiting for reservation processing, that is, there is no process (job) reserved in the table of the abatement apparatus usage right reservation information 494, another processing room is determined in step S210. Whether or not the first process is being executed is determined. This is to prevent the first process and the second process from being performed simultaneously in different process chambers. Specifically, the determination is made based on the processing status management information 492 in the storage unit 490.

  If it is determined in step S210 that the first process (for example, the roughing exhaust process from the atmospheric pressure state) is not performed in another process chamber, the process proceeds to step S260 and subsequent processes, and the second process is started. On the other hand, if it is determined in step S210 that the first process is being performed in another processing chamber, the display means 450 displays that the second process cannot be performed in step S220. At this time, for example, notification by the notification unit 470 may be performed to notify the operator that the second process cannot be executed.

  Subsequently, a reservation process is performed in steps S230 to S250. In the reservation process, first, the right to use the abatement apparatus 300 is reserved in step S230. Specifically, the right to use the abatement apparatus 300 (common exhaust system 310) is reserved in the data table of the abatement apparatus use right reservation information 494 in the storage means 490.

  Next, in step S240, it is determined whether or not the first process has been completed in another process chamber. Specifically, the determination is made based on the processing status management information 492 in the storage unit 490. For example, according to the processing status management information 492, when the first processing in another processing chamber ends, the item of the first processing in the other processing chamber changes from “1” to “0”, so that item is “0”. If changed to, it can be determined that the first process has been completed in another process chamber. If it is determined in step S240 that the first process is not completed in another process chamber, the process waits until the first process is completed in another process chamber.

  If it is determined in step S240 that the first process in the other processing chamber has been completed, it is determined in step S250 whether the right to use the abatement apparatus 300 has been acquired. Specifically, the determination is made in the order reserved in the abatement apparatus usage right reservation information 494. When determining whether or not the right to use the abatement apparatus 300 has been acquired, it is determined, for example, by the processing status management information 492 whether or not the first process is being executed in another process chamber, and another process chamber is determined. If it is determined that the first process has not been executed, it is determined that the right to use the abatement apparatus 300 has been acquired, and the process proceeds to step S260 and subsequent steps to start the second process.

  In contrast, if it is determined that the first process is being performed in another processing chamber, it is determined that the right to use the abatement apparatus 300 could not be acquired, and the right to use the abatement apparatus 300 can be acquired. wait. This is because when the first process is executed in parallel in different process chambers, it is not subject to exclusive control. Therefore, even if the first process is executed in another process chamber, In this case, the second process is not performed even in such a case.

  Next, a case where the second process is started will be described. When starting the second process, first, the second process start information is recorded in step S260. Specifically, for example, “1” is set (stored) in the second processing item in the data table of the processing status management information 492.

  Next, a second process is executed in step S270. The second process (for example, the process of the wafer W) is performed by switching the common exhaust system 310 to the detoxification common exhaust system 320 by closing the switching valve 350 of the abatement apparatus 300. As a result, the exhaust discharged from the processing chamber is exhausted through the abatement means 340 and then exhausted to, for example, a factory exhaust system.

  Next, in step S280, it is determined whether the second process has been completed. If it is determined in step S280 that the second process has ended, second process end information is recorded in step S290. Specifically, for example, “0” is set (stored) in the second processing item in the data table of the processing status management information 492. Thus, a series of second processing including exclusive control with the first processing is completed.

  According to the control when executing the second process according to the present embodiment, while the first process (for example, the roughing exhaust process from a high pressure state) is being performed in any of the processing chambers, The second process (for example, the process process of the wafer W performed in a low pressure state) that requires exhaust gas elimination in all other process chambers is not executed. Therefore, while the first process is performed in any of the processing chambers and the non-detoxification exhaust by the non-detoxification common exhaust system 330 is performed in the detoxification apparatus 300, the detoxification apparatus 300 is detoxified during the process. The exhaust gas is not switched to the exhaust gas by the common exhaust system 320. Thereby, since it can prevent exhausting through the abatement means 340 by the abatement device 300 even for processing from a high pressure state that does not require the abatement, the burden on the abatement device 300 can be reduced.

  For example, as shown in FIG. 7, the first processing, for example, roughing exhaust processing from atmospheric pressure, which is a high pressure state, is performed in the processing chamber 200B, and non-detoxification exhaust without using the detoxification means 340 of the detoxification apparatus 300 is performed. During this time, in the other processing chamber, for example, the processing chamber 200A, the second processing, for example, the processing of the wafer W performed in a low pressure state is not executed. Therefore, as shown in FIG. 8, the switching valve 350 of the abatement apparatus 300 is not closed during the first process in the process chamber 200B, so that the exhaust from the process chamber 200B is removed from the abatement apparatus 300. Exhaust through the harmful means 340 can be prevented. Thereby, the burden of the abatement apparatus 300 can be reduced.

  In this case, while the rough evacuation processing from the atmospheric pressure state is being performed, the wafer W is not loaded into the processing chamber, but is kept in the common transfer chamber 150, for example. This is because there is a possibility that process gas and deposits due to the process process remain in the process chamber, and therefore, if the wafer W is put on standby in the process chamber, the process process may progress.

  Incidentally, the first process as described above includes a process including a rough exhaust process from the atmospheric pressure state such as an auto check process and a maintenance process in addition to the rough exhaust process from the atmospheric pressure state. Accordingly, while the first process such as the auto check process or the maintenance process is performed in a certain process chamber, the second process such as the wafer W process is not performed in the other process chamber.

  In this case, as described above, the second process may not be executed in another process chamber while the entire auto check process and maintenance process are executed as the first process. While only the rough exhaust process from the atmospheric pressure state in the check process and the maintenance process is performed as the first process, the second process may not be performed in the other process chambers. Good. This is because the detoxifying device is used if the process processing of the wafer W as the second processing is not performed simultaneously in another processing chamber while the roughing exhaust processing from at least the atmospheric pressure is performed in a certain processing chamber. This is because the exhaust gas from the high pressure state can be prevented from being exhausted through the abatement means 340 of the abatement apparatus 300 because 300 is not switched to the abatement common exhaust system 320.

  Therefore, in such a case, even when the auto-check process or the maintenance process is performed in a certain processing chamber, if the roughing exhaust process from the atmospheric pressure state is not performed, the second processing chamber does not perform the second process. As a process, the process of the wafer W can be executed. On the other hand, while the rough exhaust process from the atmospheric pressure state of the auto check process or the maintenance process is being performed in a certain process chamber, the process processing of the wafer W as the second process is performed in another process chamber. Will not be able to execute.

  Further, the second process includes not only the process of the wafer W but also the process of opening the gas introduction valve 214 in order to introduce the process gas in the maintenance process and the cleaning process. Since the process of opening the gas introduction valve 214 also involves an exhaust process, when introducing a process gas that needs to be detoxified, the exhaust is switched to the detoxification common exhaust system 320 and the detoxification apparatus 300. It is because it is necessary to exhaust through the abatement means 340. Accordingly, while the first process, for example, the roughing exhaust process from the atmospheric pressure state, is being performed in a certain process chamber, the second process, for example, the process of opening the gas introduction valve 214 cannot be performed in the other process chamber.

  In the above embodiment, the details from the start to the end of the process of the wafer W, which is an example of the second process, are as follows. That is, when continuously processing a plurality of wafers W (for example, one lot) in the processing chamber, for example, from the start of continuous operation for each lot to the end of continuous operation. Further, when processing the wafers W one by one in the processing chamber, for example, from the process / recipe execution before the wafer W is loaded into the processing chamber to the end of the electrostatic removal in the processing chamber after the wafer is unloaded. To do. In this case, when wafer rescreening (WLDC) is performed while introducing a processing gas after unloading the wafer in order to remove deposits in the processing chamber, the wafer rescreening is completed. This is because, since it is necessary to occupy the abatement apparatus 300 from the start to the end of the process processing of the wafer W, it is necessary to prevent the first processing from being executed during that time.

  In addition, when an abnormality occurs in the substrate processing apparatus 100 during the process processing of the wafer W and the processing is stopped, when the abatement apparatus 300 is used in the recovery processing, or after the recovery processing (for example, electrostatic removal) When the abatement apparatus 300 is used, the reservation by the abatement apparatus use right reservation information 494 is temporarily canceled, and a new use right of the abatement apparatus 300 is acquired for the recovery process. Similarly, when the process shifts to the maintenance process while waiting for the process by the exclusive control of the first process and the second process, the reservation by the abatement apparatus usage right reservation information 494 is once canceled and the recovery process is performed. A right to use the abatement apparatus 300 is newly acquired. As described above, when the recovery process or the maintenance process is performed, the reservation by the abatement apparatus usage right reservation information 494 is canceled once, so that there is a reservation for other processes by the abatement apparatus usage right reservation information 494. It is possible to avoid the inconvenience that the abatement apparatus 300 cannot be used in the recovery process and the maintenance process.

  Further, when the process chamber is separated and the process shifts to the independent maintenance process in which the maintenance process is performed, the exclusive control of the first process and the second process as shown in FIGS. 12 and 13 is not performed for the process chamber. Accordingly, in such an independent maintenance process, the first process or the second process can be executed regardless of whether the first process or the second process is being executed in another process chamber. Further, when the processing chamber is shifted to the independent maintenance process while the abatement apparatus 300 is in use, the use of the abatement apparatus 300 in the processing chamber is stopped and the abatement apparatus usage right reservation information 494 has already been stopped. Alternatively, the abatement apparatus 300 may be used in another processing chamber reserved.

  Further, in the exclusive control of the first process and the second process in the above embodiment, when one process is performed in a certain process chamber, the other process is performed in another process chamber. Although the case where the reservation process (for example, step S130 to step S150 in FIG. 12 and step S130 to step S150 in FIG. 13) is performed has been described, the present invention is not necessarily limited to this. For example, one process is performed in a certain processing chamber. In this case, if the other process is being performed in another process chamber, the process may be terminated with an error without performing the reservation process.

  Further, the reservation process may not be performed in the following cases. For example, when the first process or the second process is performed by a maintenance process performed by an operator, for example, a process process during maintenance, a process of operating the switching valve 270 and the gas introduction valve 214 of the auxiliary exhaust system 240 independently, opening to the atmosphere, and vacuuming When the cycle purge process for exhausting the process gas remaining in the process chamber is repeated, the atmosphere release process, the cleaning process, etc. are executed, these processes are suspended by the exclusive process of the first process or the second process. In this case, the reservation process may not be performed, and the execution may be disabled by, for example, an interlock. In these processes, since the operator often monitors the substrate processing apparatus 100, there is no need for automatic execution by the reservation process, and the apparatus can be freely operated by the operator. This is because the usability of the is improved.

  Moreover, although the said embodiment demonstrated the case where the common removal apparatus 300 was connected via the common exhaust system 310 to exhaust system 220A-220D of all the process chambers 200A-200D with which the substrate processing apparatus 100 is provided, at least 2 If it is the above processing chamber, you may make it connect a detoxification apparatus via the common exhaust system to the exhaust system of some processing chambers.

  For example, the first abatement device is connected to the processing chambers 200A and 200B via the first common exhaust system, and the second abatement device is connected to the processing chambers 200C and 200D via the second common exhaust system. May be. In this case, the exclusive control of the first process and the second process according to the present embodiment is performed for each process chamber connected to each common exhaust system. Further, a detoxifying device may be connected to the processing chambers 200A to 200C via a common exhaust system, and another detoxifying device may be connected only to the processing chamber 200D. In this case, the exclusive control of the first process and the second process according to the present embodiment is performed for the process chambers 200A to 200C.

  In the common exhaust system 310 in the above embodiment, the abatement device includes both the abatement common exhaust system 320 that exhausts through the abatement means 340 and the non-abatement common exhaust system 330 that exhausts without going through the abatement means 340. However, the present invention is not necessarily limited to this, and only the abatement common exhaust system 320 is provided in the abatement apparatus 300, and the non-abatement common exhaust system 330 is the abatement apparatus 300. You may make it provide separately. As a result, the present invention can be applied to the abatement apparatus 300 in which the non-detoxification common exhaust system 330 is not formed.

  Further, as described above, the gas introduction system 210 is not limited to the configuration shown in FIG. It goes without saying that the gas introduction system 210 can be applied to the present invention regardless of how the gas introduction system 210 is configured in accordance with, for example, the type of gas introduced into the processing chamber 200 or the flow rate. Specifically, for example, when multiple types of gas are introduced, a plurality of gas introduction systems for connecting a gas supply source and a gas introduction valve (gas introduction valve) are provided for each gas type, and each gas type merges into the processing chamber. A piping configuration such as that introduced to 200 may be used. In this case, a gas introduction system may be provided for each of a plurality of process gases. When a mixed gas with an inert gas is used as the process gas, the gas introduction system for the inert gas is used as the process gas gas. It may be added to the introduction system. Furthermore, an inert gas introduction system may be added as a gas introduction system for opening to the atmosphere.

Here, a configuration example in the case where the gas introduction system 210 shown in FIG. 2 includes a processing gas introduction system and an inert gas introduction system will be described with reference to FIG. Here, the inert gas introduction system is used when performing wafer processing and when performing particle reduction processing by gas impact. When performing wafer processing, an inert gas (for example, N ₂ gas) having a predetermined flow rate is continuously introduced into the processing chamber together with the processing gas, for example, as a pressure adjusting gas, and a large flow rate is not used when performing particle reduction processing by gas shock waves. An active gas (for example, N ₂ gas) is continuously introduced into the processing chamber, for example, as a purge gas. In the following, as in the case of FIG. 2, A to D are omitted from the reference numerals indicating the components of the processing chambers 200 </ b> A to 200 </ b> D, and a representative description will be given. Therefore, for example, the processing chamber 200 indicates the processing chambers 200A to 200D, and the gas introduction system 210 indicates the gas introduction systems 210A to 210D of the processing chambers 200A to 200D.

  The gas introduction system 210 shown in FIG. 14 is configured such that the pipes of the processing gas introduction system 510 and the inert gas introduction system 520 are joined and connected to the processing chamber 200. The processing gas introduction system 510 includes, for example, a processing gas supply source 512 and a gas introduction valve (gas introduction valve) 514. Note that a plurality of processing gas introduction systems 510 may be provided in parallel according to the type of processing gas, and a piping configuration may be employed in which the processing gases are joined and introduced into the processing chamber 200.

  The inert gas introduction system 520 includes, for example, an inert gas supply source 522, and can introduce an inert gas from the inert gas supply source 522 into the processing chamber 200 at a constant low flow rate (first introduction). System) 530 and a large flow rate introduction system (second introduction system) 540 capable of introducing the inert gas from the inert gas supply source 522 into the processing chamber 200 at a larger flow rate than the low flow rate introduction system 530 are connected in parallel. Configured.

The low flow rate introduction system 530 includes a throttle valve 532 that adjusts the inert gas from the inert gas supply source 522 to a constant flow rate, and a gas introduction valve (gas introduction valve) 534. The throttle valve 532 may be constituted by a fixed valve such as an orifice or a choke, or may be constituted by a variable valve capable of fine adjustment of the flow rate. Further, the gas introduction valve 534 and the throttle valve 532 may be constituted by one orifice valve. The low flow rate introduction system 530 is used when, for example, an inert gas such as N ₂ gas is introduced into the processing chamber 200 as a pressure adjusting gas when a processing gas is introduced into the processing chamber 200 for wafer processing. used. When the low flow rate introduction system 530 is used during such wafer processing, the flow rate of the inert gas adjusted by the throttle valve 532 is set to such a level that the pressure of the processing chamber 200 can be adjusted.

The large flow rate introduction system 540 is configured to be connected to the downstream side of the low flow rate introduction system 530 via a gas introduction valve (gas introduction valve) 542. The large flow rate introduction system 540 is used, for example, when performing a cleaning process for removing particles and the like in the processing chamber 200 while introducing an inert gas. As such a cleaning process, for example, an inert gas such as N ₂ gas is exhausted while being introduced into the processing chamber 200 at a large flow rate, so that a shock wave (Shock Wave) transmitted under a predetermined condition is transmitted. There is a particle reduction process (NPPC) in which particles and the like separated from the inner wall of the processing chamber 200 due to pressure waves are discharged together with exhaust. In the case of using the large flow rate introduction system 540 in such a particle reduction process, the flow rate of the inert gas by the large flow rate introduction system 540 is set to a flow rate that can remove particles or the like in the processing chamber 200 by the gas shock wave. .

  In the example of the piping configuration shown in FIG. 14, the case where the inert gas introduction system 520 is configured by two low flow introduction systems 530 and a large flow introduction system 540 has been described, but the present invention is not necessarily limited thereto. . For example, the inert gas introduction system 520 is configured as a single introduction system, and the flow rate of the inert gas is adjusted to a low flow rate during wafer processing and to a high flow rate during particle reduction processing by a flow rate adjusting valve. Also good. However, in any configuration, since an inert gas is used as a pressure adjusting gas during wafer processing, it is necessary to always ensure a constant flow rate when the flow rate of the inert gas is low during wafer processing.

  However, if the inert gas introduction system 520 is configured as one system as described above, the flow rate adjustment valve repeatedly adjusts from a large flow rate to a low flow rate. In some cases, it may be difficult to keep the flow rate constant. In this regard, when two inert gas introduction systems 520 are used as shown in FIG. 14, there is no need for a flow adjustment valve for adjusting from a large flow rate to a low flow rate, and a constant flow rate is always secured with an inexpensive configuration. can do. Further, by switching the inert gas introduction system 520 to two systems, switching control of the common exhaust system 310 in the abatement apparatus 300 to be described later becomes easy.

  When the wafer W is processed in the processing chamber 200 having the piping configuration shown in FIG. 14, the processing chamber 200 having the piping configuration shown in FIG. 2 is first closed with the gate valve of the processing chamber 200 closed. In the same manner as described above, a vacuuming process is performed to reduce the pressure in the processing chamber 200 to a predetermined pressure. When the vacuuming process is completed, the gate valve is opened and the wafer W is loaded into the processing chamber 200. When the wafer W is mounted on the mounting table, the gate valve is closed and the process proceeds to the wafer W processing step.

In this case, for example, as shown in FIG. 15, the switching valve 270 is closed so that the exhaust system 220 becomes the main exhaust system 230. In this state, the processing gas from the processing gas supply source 512 is introduced into the processing chamber 200 by opening the gas introduction valve 514 of the processing gas introduction system 510 and the gas introduction valve 542 of the inert gas introduction system 520 is opened. By introducing the inert gas (for example, N ₂ gas) from the inert gas supply source 522 into the processing chamber 200 through the low flow rate introduction system 530 by opening the gas introduction valve 534 while being closed, The processing of the wafer W is started. At this time, the inert gas serves as a pressure adjusting gas, and the pressure in the processing chamber 200 is maintained at a predetermined pressure. In this state, the wafer W is processed for a predetermined time.

  When processing gas containing harmful components is used in the processing of the wafer W, exhaust gas containing harmful components is discharged from the processing chamber 200 as described above. , The common exhaust system 310 is switched to the abatement common exhaust system 320. Thereby, after exhausting the exhaust from the processing chamber 200 generated when processing the wafer W, the exhaust can be performed, for example, to an exhaust system of a factory.

Next, after the processing of the wafer W is completed and the wafer is unloaded, for example, when the above-described particle reduction processing is performed, the switching valve 270 is opened and the exhaust system 220 is changed to the auxiliary exhaust system 240. Then, the gas introduction valve 514 of the processing gas introduction system 510 and the gas introduction valve 534 of the inert gas introduction system 520 are closed, and the inert gas from the inert gas supply source 522 is opened by opening the gas introduction valve 542. A gas (for example, N ₂ gas) is introduced into the processing chamber 200 via the large flow rate introduction system 540. As a result, particles adhering to the inner wall of the processing chamber 200 due to a gas shock wave of an inert gas (for example, N ₂ gas) are separated and discharged together with the exhaust gas.

In such a particle reduction process, an inert gas such as N ₂ gas that does not contain harmful components is used. Nevertheless, exhausting through the abatement means 340 of the abatement apparatus 300 increases the burden on the abatement apparatus 300. Therefore, when such particle reduction processing is performed, the exhaust from the processing chamber 200 is discharged without going through the abatement means 340, as in the case of the cycle purge described above. Specifically, as shown in FIG. 16, the common exhaust system 310 is switched to the non-detoxifying common exhaust system 330 by opening the switching valve 350 of the abatement apparatus 300. Thereby, the burden of the abatement apparatus 300 can be reduced.

  In the particle reduction process, the inert gas may be introduced into the processing chamber 200 using only the large flow rate introduction system 540 as shown in FIG. 16, but both the gas introduction valves 542 and 534 are opened. Alternatively, the inert gas may be introduced into the processing chamber 200 using both the large flow rate introduction system 540 and the low flow rate introduction system 530. As a result, a larger flow rate of inert gas can be introduced into the processing chamber 200.

  When processing is performed in parallel in the processing chambers 200A and 200B having the piping configuration shown in FIG. 14, exclusive processing by the first processing and the second processing as shown in FIGS. 12 and 13 is performed. In this case, as shown in FIG. 15, the processing gas is introduced by the processing gas introduction system 510 and the inert gas is introduced by the low flow rate introduction system 530. For example, in the wafer processing, the common exhaust system 310 is removed from the common exhaust system 320. This is equivalent to the second process. On the other hand, in the process of introducing an inert gas by the large flow rate introduction system 540 (or both the large flow rate introduction system 540 and the low flow rate introduction system 530), for example, the particle reduction process, the common exhaust system 310 is not detoxified common exhaust. Since it is executed by switching to the system 330, it corresponds to the first processing.

  By performing such exclusive processing, for example, while the wafer processing corresponding to the second processing is being performed in the processing chamber 200A, the particle reduction processing corresponding to the first processing is performed in the other processing chamber 200B or the like. Conversely, while the particle reduction process corresponding to the first process is being performed in the process chamber 200A, the wafer process corresponding to the second process is not performed in the other process chamber 200B or the like. . Thereby, it is possible to prevent the first process as described above and the second process as described above from being performed simultaneously in different process chambers. For this reason, even in the substrate processing apparatus including the processing chamber 200 having the piping configuration as shown in FIG. 14, exhaust that needs to be removed is exhausted without being eliminated while reducing the burden on the abatement apparatus 300. Can be reliably prevented.

Next, another configuration example of the gas introduction system 210 shown in FIG. 2 will be described with reference to the drawings. FIG. 17 is a block diagram illustrating another configuration example of the gas introduction system 210. The configuration example shown in FIG. 17 is a specific example in which the inert gas introduction system shown in FIG. 14 is configured as an atmospheric release system that opens to the atmosphere by introducing an inert gas (for example, N ₂ gas) into the processing chamber. Here, in addition to using such an inert gas introduction system when releasing the atmosphere in the processing chamber, it is also used when performing particle reduction processing (for example, two-stage NPPC described later) in the processing chamber.

  The gas introduction system 210 shown in FIG. 17 is connected to the processing chamber 200 via a main valve (main valve) 602 by combining the pipes of the processing gas introduction system 610 and the inert gas introduction system 620 as an open air system. Configured to do. The processing gas introduction system 610 includes, for example, a processing gas supply source 612, an upstream gas introduction valve (upstream gas introduction valve) 614, a flow rate controller (for example, a mass flow controller) 615, and a downstream gas introduction valve (downstream gas introduction valve). 616. Note that a plurality of processing gas introduction systems 610 may be provided in parallel according to the type of processing gas, and a piping configuration may be adopted in which the processing gases are joined and introduced into the processing chamber 200.

  The inert gas introduction system 620 includes, for example, an inert gas supply source 622 and can introduce an inert gas from the inert gas supply source 622 into the processing chamber 200 at a constant low flow rate (first introduction). System) 630 and a high flow rate introduction system (second introduction system) 640 capable of introducing the inert gas from the inert gas supply source 622 into the processing chamber 200 at a larger flow rate than the low flow rate introduction system 630 are connected in parallel. Configured.

  The low flow rate introduction system 630 includes a throttle valve 632 that adjusts the inert gas from the inert gas supply source 622 to a constant flow rate, and a downstream gas introduction valve (downstream gas introduction valve) 636. The throttle valve 632 may be constituted by a fixed valve such as an orifice or a choke, or may be constituted by a variable valve capable of fine adjustment of the flow rate. Further, the downstream side gas introduction valve 636 and the throttle valve 632 may be constituted by one orifice valve. The large flow rate introduction system 640 is configured to be connected to the downstream side of the low flow rate introduction system 630 via a downstream side gas introduction valve (downstream side gas introduction valve) 646.

  The processing gas introduction system 610 and the inert gas introduction system 620 are connected via a communication pipe 604. Specifically, the downstream side of the upstream gas introduction valve 614 of the processing gas introduction system 610 and the downstream side of the upstream gas introduction valve 624 of the inert gas introduction system 620 are connected via a communication pipe 604 provided with a communication valve 606. Connected. By opening the communication valve 606, the inert gas from the inert gas introduction system 620 flows through the communication pipe 604, the flow rate regulator 615 of the processing gas introduction system 610, the downstream gas introduction valve 616, and the main valve 602. Are introduced into the processing chamber 200. Thereby, the inert gas from the inert gas introduction system 620 can be introduced into the processing chamber 200 while the flow rate is adjusted by the flow rate regulator 615 of the processing gas introduction system 610.

Next, a specific example of the cleaning process performed in the processing chamber 200 having the piping configuration as shown in FIG. 17 will be described. In this cleaning process, for example, when an inert gas such as N ₂ gas is temporarily introduced into the processing chamber 200 at a high flow rate, a shock wave (Shock Wave) generated under a predetermined condition is transmitted. There is a particle reduction process (NPPC) in which particles and the like separated from the inner wall of the processing chamber 200 by the wave are discharged together with the exhaust gas.

  Such particle reduction processing is executed by the control unit 400 under control as shown in FIG. 18, for example. FIG. 18 is a flowchart showing a specific example of control when the particle reduction process is executed. As shown in FIG. 18, the particle reduction process (NPPC) here is a two-stage process including a first NPPC (step S300) as the first particle reduction process and a second NPPC (step S400) as the second particle reduction process. It is composed of NPPC. The first NPPC is a normal NPPC, which is a low-pressure NPPC executed in a low-pressure environment. The second NPPC is an NPPC including a cleaning process using a gas shock wave, and is a high-pressure NPPC executed in a high-pressure environment.

  Here, a specific example of the processing of the first NPPC (step S300) will be described with reference to FIG. As shown in FIG. 19, the first NPPC first performs a pre-execution check in step S310. The pre-execution check is to check whether the processing chamber 200 is in a state in which NPPC can be normally executed. For example, when a wafer is being processed, when a wafer exists in the processing chamber, when a wafer is being unloaded from the processing chamber, or when maintenance is being performed, the processing chamber 200 is NPPC. Is not in a state where it can be executed normally.

  For example, when processing a wafer, the processing gas is being introduced, the back gas is being introduced for temperature adjustment of the wafer, the electrostatic chuck holding and holding the wafer is being controlled, and the high frequency power source is being controlled. Etc. As a case where the wafer is being carried out, for example, the gate of the processing chamber is being opened. An example of a case where maintenance is being performed is when the lid of the processing chamber is being opened.

  In such a case, the processing chamber 200 is not in a state in which NPPC can be executed normally. Therefore, when these items are checked in advance and it is determined that the processing chamber 200 is not in a state in which NPPC can be normally executed, for example, the NPPC processing is terminated with an error, and the processing chamber 200 can normally execute NPPC. If it is determined that, the processing after step S312 is executed.

  Next, the main exhaust process is performed in step S312. Specifically, the processing chamber 200 is evacuated to a predetermined high vacuum pressure by the main pump 260. For example, when a predetermined high vacuum pressure is not reached even after a predetermined time elapses, the error ends due to a timeout. Next, in step S314, for example, pressure control by a pressure adjustment valve (APC) (not shown) of the main exhaust system 230 is started so that the inside of the processing chamber 200 becomes a predetermined cleaning pressure.

Next, an inert gas (for example, N ₂ gas) is introduced into the processing chamber 200 in step S316. Here, the inert gas is introduced from the processing gas introduction system 610 through the communication pipe 604. Specifically, for example, as shown in FIG. 21, the upstream side gas introduction valve 624 and the communication valve 606 are opened while the downstream side gas introduction valves 636 and 646 of the inert gas introduction system 620 are closed, and the processing gas is introduced. The downstream gas introduction valve 616 and the main valve 602 are opened while the upstream gas introduction valve 614 of the system 610 is closed. Thereby, an inert gas (for example, N ₂ gas) from the inert gas supply source 622 is introduced into the processing chamber 200 from the processing gas introduction system 610 through the communication pipe 604.

  Then, in step S318, it is determined whether or not the pressure in the processing chamber 200 is stable. If it is determined that the pressure in the processing chamber 200 is stable, the applied voltage is controlled in step S320. Here, for example, the voltage applied to the electrostatic chuck for attracting and holding the wafer to the lower electrode is controlled. Specifically, the applied voltage to the electrostatic chuck is positive and turned off (0) after a predetermined time (for example, 2 seconds) has elapsed, and then the applied voltage to the electrostatic chuck is negative and the predetermined time (for example, 2 seconds) has elapsed. The applied voltage polarity conversion control to turn off (0) later is repeated a predetermined number of times (for example, five times). Thereby, since the particles in the processing chamber 200 are easily scattered, the particles can be effectively removed. When the control of the applied voltage is completed, the pressure control during cleaning is stopped in step S322. For example, the pressure adjustment valve (APC) (not shown) of the main exhaust system 230 is fully opened.

  Next, in step S324, the upstream gas introduction valve 624 of the inert gas introduction system 620 is closed to stop the introduction of the inert gas. At this time, the communication valve 606, the gas introduction valve 616 on the downstream side of the processing gas introduction system 610, and the main valve 602 are left open. In this state, by performing a vacuuming process in step S326, the residual gas in the processing gas introduction system 610 and the communication pipe 604 is exhausted.

  Next, the main exhaust process is performed again in step S328. Specifically, the inside of the processing chamber 200 is exhausted by the main pump 260 until a predetermined high vacuum pressure is reached. For example, when a predetermined high vacuum pressure is not reached even after a predetermined time elapses, the error ends due to a timeout. In this way, a series of first NPPCs are finished, and then the second NPPC is executed.

  Next, a specific example of the process of the second NPPC (step S400) will be described with reference to FIG. As shown in FIG. 20, first, in step S410, the second NPPC closes, for example, a pressure adjustment valve (APC) (not shown) of the main exhaust system 230 and stops the main exhaust process. Next, in step S412, the roughing exhaust process is started. Specifically, the auxiliary pump 250 is driven to exhaust the inside of the processing chamber 200 through the auxiliary exhaust system 240. In order to protect the vacuum pressure gauge when executing the processing of the second NPPC, it is preferable to close the protective valve of the vacuum pressure gauge at the beginning of the second NPPC.

  Subsequently, in step S414, an inert gas is introduced into the processing chamber 200 by the inert gas introduction system 620 that is an open air system. Here, the inert gas is introduced using both the low flow rate introduction system 630 and the large flow rate introduction system 640. Specifically, as shown in FIG. 22, the upstream gas introduction valve 624 is opened, and the downstream gas introduction valves 636, 646 and the main valve 602 are opened to introduce the inert gas. In step S416, a predetermined time (for example, 5 seconds) is awaited. When the predetermined time has passed, the downstream side gas introduction valve 646 of the large flow rate introduction system 630 is closed in step S418, and the inert gas is introduced only from the low flow rate introduction system 640 as shown in FIG.

  Next, applied voltage control is performed in step S420. As the applied voltage control here, for example, processing similar to step S320 is executed. Next, the introduction of the inert gas is stopped in step S422, and the roughing exhaust process is terminated in step S424. Specifically, first, the rough valve exhaust process is performed, the main valve 602 is opened, and the upstream gas introduction valve 624 and the downstream gas introduction valve 646 of the inert gas introduction system 620 are closed to be inert. Stop introducing gas and wait for a predetermined time. Thereby, the remaining particles can be removed. Then, when the predetermined time has elapsed, the auxiliary pump 250 is stopped and the roughing exhaust process is terminated.

  Subsequently, in step S426, the main pump 260 is driven to perform the main exhaust process, and the series of second NPPCs is completed. Such second NPPC may be repeatedly executed a predetermined number of times.

According to the particle reduction process (NPPC) shown in FIG. 18 as described above, in order to execute the two-stage NPPC of the first NPPC executed in the low pressure environment and the second NPPC executed in the high pressure environment, the processing chamber 200 Inner particles and the like can be removed more efficiently. Further, according to the second NPPC, a gas shock wave is generated at a predetermined time (for example, 5 seconds), that is, when a large flow of inert gas (for example, N ₂ gas) is temporarily introduced into the processing chamber 200, Particles attached to the inner wall of the processing chamber 200 can be efficiently separated.

  Also in the particle reduction process (NPPC) shown in FIG. 18, as described above, the process executed in the process chamber 200 does not require at least exhaust gas removal and is in a high pressure state (for example, 50 Torr [66.6 hPa] or more). The common exhaust system 310 is switched to the non-detoxifying common exhaust system 330 in the case of processing executed from the above, and the common exhaust system 310 is switched to the detoxifying common exhaust system 320 in other processing. Thereby, also in the particle reduction process (NPPC) shown in FIG. 18, the burden of the abatement apparatus 300 can be reduced.

  By the way, when the first NPPC and the second NPPC of the particle reduction process (NPPC) shown in FIG. 18 are simultaneously performed in a plurality of processing chambers, if the pressure in each processing chamber is a pressure state lower than, for example, 50 Torr [66.6 hPa], In each processing chamber, the common exhaust system 310 is exhausted by the abatement common exhaust system 320 through the abatement means 340 as shown in FIGS. Accordingly, if the second NPPC is a process in which a large flow of inert gas is continuously introduced as shown in FIG. 14, if a large flow of inert gas is continuously exhausted in a plurality of processing chambers, The burden of 300 is considered to increase.

  In this regard, the second NPPC as shown in FIG. 20 does not continue to introduce a large flow of inert gas, but only introduces a large flow of inert gas temporarily. Therefore, according to the second NPPC as shown in FIG. 20, even if the second NPPC is executed simultaneously in a plurality of processing chambers, a large flow of inert gas is exhausted for only a very short time. As compared with the case where the inert gas is continuously introduced, the burden on the abatement apparatus 300 can be greatly reduced.

Note that the particle reduction process (NPPC) shown in FIG. 18 is executed, for example, during a maintenance process. Further, the particle reduction process (NPPC) shown in FIG. 18 is executed every predetermined time or every predetermined number of wafers processed by an automatic inspection process (auto check process). In this case, before executing the main evacuation process (step S312) of the first NPPC shown in FIG. 19, the purge process with an inert gas (for example, N ₂ gas) is stopped, and for example, the NPPC is performed on the display means 450. 20 is displayed, and after the execution of the second NPPC main exhaust process (step S426) shown in FIG. 20, the display means 450 is turned off to indicate that the NPPC is being executed, and the inert gas (for example, N ₂ gas) is used. The purge process may be resumed.

For example, when it is set to execute the particle reduction processing (NPPC) shown in FIG. 18 every predetermined time or every predetermined number of processed wafers in the automatic inspection processing (automatic check processing), for example, wafer processing is performed for 25 wafers per lot. It is also conceivable that the process shifts to the particle reduction process (NPPC) during the batch process for executing. In such a case, it may be possible to shift to the particle reduction process (NPPC) during the execution of the purge process using an inert gas (for example, N ₂ gas). It is necessary to shift to a particle reduction process (NPPC). On the other hand, in the case of the maintenance process, the purge process should be completed prior to the transition to the maintenance process, so there is no need to stop and restart the purge process using the inert gas.

  Further, the particle reduction process (NPPC) shown in FIG. 18 may be performed not only on the processing chamber 200 but also on the load lock chamber 160. In this case, the particle reduction process (NPPC) may be repeatedly executed a plurality of times.

  In addition, the present invention described in detail in the above embodiment may be applied to a system composed of a plurality of devices or an apparatus composed of a single device. A medium such as a storage medium storing software programs for realizing the functions of the above-described embodiments is supplied to the system or apparatus, and the computer (or CPU or MPU) of the system or apparatus is stored in the medium such as the storage medium. It goes without saying that the present invention can also be achieved by reading and executing the program.

  In this case, the program itself read from the medium such as a storage medium realizes the functions of the above-described embodiment, and the medium such as the storage medium storing the program constitutes the present invention. Examples of the medium such as a storage medium for supplying the program include a floppy (registered trademark) disk, a hard disk, an optical disk, a magneto-optical disk, a CD-ROM, a CD-R, a CD-RW, a DVD-ROM, and a DVD-RAM. , DVD-RW, DVD + RW, magnetic tape, non-volatile memory card, ROM, or network download.

  Note that by executing the program read by the computer, not only the functions of the above-described embodiments are realized, but also an OS or the like running on the computer is part of the actual processing based on the instructions of the program. Alternatively, the case where the functions of the above-described embodiment are realized by performing all the processing and the processing is included in the present invention.

  Furthermore, after a program read from a medium such as a storage medium is written to a memory provided in a function expansion board inserted into the computer or a function expansion unit connected to the computer, the function is determined based on the instructions of the program. The present invention also includes a case where the CPU or the like provided in the expansion board or the function expansion unit performs part or all of the actual processing and the functions of the above-described embodiments are realized by the processing.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are of course within the technical scope of the present invention. Understood.

  For example, in the above-described embodiment, a so-called cluster tool type substrate processing apparatus in which a plurality of processing chambers are connected around a common transfer chamber has been described as an example. However, for example, a load lock chamber is provided in the processing chamber. The present invention can be applied to various types of substrate processing apparatuses, such as a so-called tandem type substrate processing apparatus that is connected and connected to a transfer unit in parallel, and other types of substrate processing apparatuses whose operation is stopped due to an abnormality in the substrate processing apparatus. is there.

  INDUSTRIAL APPLICABILITY The present invention is applicable to a substrate processing apparatus including a detoxifying device that detoxifies exhaust gas exhausted in processing of a substrate such as a semiconductor wafer or a liquid crystal substrate, a control method for the substrate processing apparatus, and a program.

It is sectional drawing which shows the structure of the substrate processing apparatus concerning embodiment of this invention. It is a block diagram which shows the piping structural example of each process chamber of the substrate processing apparatus shown in FIG. 1, and the structural example of an abatement apparatus. It is a figure explaining the flow of the exhaust_gas | exhaustion in case only one process chamber exhausts with a non-detoxification common exhaust system using an abatement apparatus. It is a figure explaining the flow of the exhaust in case only one process chamber exhausts with an abatement common exhaust system using an abatement apparatus. It is a figure explaining the flow of exhaust in case processing is performed in parallel in two processing chambers. It is a figure explaining the flow of exhaust in case processing is performed in parallel in two processing chambers. It is a figure explaining the flow of exhaust in case processing is performed in parallel in two processing chambers. It is a figure explaining the flow of exhaust in case processing is performed in parallel in two processing chambers. It is a block diagram which shows the structural example of the control part in the embodiment. It is a figure which shows the specific example of the data table of the process status management information in the embodiment. It is a figure which shows the specific example of the data table of the abatement apparatus use right reservation information in the embodiment. It is a flowchart which shows the specific example of control in the case of performing the 1st process in the embodiment. It is a flowchart which shows the specific example of control in the case of performing the 2nd process in the embodiment. It is a block diagram which shows the specific structural example of the gas introduction system shown in FIG. It is a figure explaining the flow of exhaust_gas | exhaustion when a wafer process is performed in the processing chamber of the piping structure shown in FIG. It is a figure explaining the flow of exhaust when a particle reduction process is performed in the processing chamber of the piping structure shown in FIG. It is a block diagram which shows the other specific structural example of the gas introduction system shown in FIG. It is a flowchart which shows the specific example of control in the case of performing a particle reduction process in the processing chamber of the piping structure shown in FIG. It is a flowchart which shows the specific example of 1st NPPC shown in FIG. It is a flowchart which shows the specific example of 2nd NPPC shown in FIG. It is a figure explaining the flow of exhaust when 1st NPPC is performed in the processing chamber of the piping structure shown in FIG. It is a figure explaining the flow of exhaust when 2nd NPPC is performed in the processing chamber of the piping structure shown in FIG. It is a figure explaining the flow of exhaust when 2nd NPPC is performed in the processing chamber of the piping structure shown in FIG. It is a block diagram which shows the prior art example of a substrate processing apparatus provided with an abatement apparatus. It is a block diagram which shows the other conventional example of a substrate processing apparatus provided with an abatement apparatus.

Explanation of symbols

100 substrate processing apparatus 110 processing unit 120 transfer unit 130 transfer chamber 131 (131A-131C) cassette stand 132 (132A-132C) cassette container 136 orienter 150 common transfer chamber 160M, 160N load lock chamber 170 transfer unit side transfer mechanism 180 processing unit Side transfer mechanism 200 (200A to 200D) Processing chamber 210 (210A to 210D) Gas introduction system 212 (212A to 212D) Gas supply source 214 (214A to 214D) Gas introduction valve 220 (220A to 220D) Exhaust system 230 (230A to 230A) 230D) Main exhaust system 240 (240A-240D) Auxiliary exhaust system 250 (250A-250D) Auxiliary pump 260 (260A-260D) Main pump 270 (270A-270D) Switching valve 280 (280A- 280D) Pressure sensor 300 abatement device 310 common exhaust system 320 abatement common exhaust system 330 non-abatement common exhaust system 340 abatement means 350 switching valve 400 control unit 410 CPU
420 ROM
430 RAM
440 Time measuring means 450 Display means 460 Input / output means 470 Notification means 480 Various controllers 490 Storage means 492 Processing status management information 494 Detoxifying device use right reservation information 510 Processing gas introduction system 512 Processing gas supply source 514 Gas introduction valve 520 Inert gas Introduction system 522 Inert gas supply source 530 Low flow introduction system 532 Throttle valve 534 Gas introduction valve 540 Large flow introduction system 542 Gas introduction valve 602 Main valve 604 Communication pipe 606 Communication valve 610 Process gas introduction system 612 Process gas supply source 614 Upstream Side gas introduction valve 615 Flow rate regulator 616 Downstream gas introduction valve 620 Inert gas introduction system 622 Inert gas supply source 624 Upstream gas introduction valve 630 Low flow introduction system 632 Throttle valve 636 Downstream gas introduction valve 640 Large flow introduction System 646 Downstream side Introduction valve W Wafer

Claims (28)

A plurality of processing chambers for introducing a gas to perform a predetermined process, an exhaust system provided in each of these processing chambers, and an exhaust system of at least two processing chambers among the exhaust systems of each of these processing chambers are connected. A substrate processing apparatus comprising a common exhaust system,
The common exhaust system includes a detoxification common exhaust system that exhausts the exhaust from the exhaust system of each processing chamber after detoxifying means, and a detoxifying means for exhausting from the exhaust system of each processing chamber. It is configured to be switchable with a non-detoxifying common exhaust system that exhausts air without intervention,
A substrate processing apparatus comprising: control means for performing switching control between the detoxification common exhaust system and the non-detoxification common exhaust system in accordance with the type of process performed in each of the process chambers. The control means includes a process of switching the common exhaust system to the non-detoxifying common exhaust system when performing processing in parallel in the plurality of processing chambers connected to the common exhaust system. One process is performed in one process chamber of the plurality of process chambers among one process and a second process including a process performed by switching the common exhaust system to the abatement common exhaust system. 2. The substrate processing apparatus according to claim 1, wherein a predetermined exclusive control is performed so that the other process is not performed in another process chamber among the plurality of process chambers while the other process is performed. Use right reservation information storage means for storing reservation information of the right to use the common exhaust system in each processing chamber;
The exclusive control in each processing chamber is performed when one of the first processing and the second processing is performed in one processing chamber among the plurality of processing chambers connected to the common exhaust system. Determining whether or not the process is performed in another process chamber among the plurality of process chambers connected to the common exhaust system,
If it is determined that one of the processes is not being performed in another process chamber, the other process is performed,
If it is determined that one of the processes is being executed in another process chamber, the other process is placed in a process waiting state, and the right-of-use reservation information storage means stores the right-of-use reservation information for the common exhaust system. 3. The substrate processing apparatus according to claim 2, wherein after that, a reservation process for executing the other process is performed based on the reservation information stored in the right-of-use reservation information storage means. The substrate processing apparatus according to claim 3, wherein the reservation process executes the other process for the process chamber in a waiting state after the completion of one process in the other process chamber. . When the reservation information of the right to use the common exhaust system is stored for a plurality of processing chambers in the right-of-use reservation information storage means, the other processing is performed in the order in which the reservation information is stored. The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus is executed. The first process is a process that does not require exhaust gas detoxification, and the process chamber includes at least a process that involves exhaust of a predetermined pressure or higher, and the second process includes a process that requires exhaust gas to be detoxified. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus includes at least a substrate. The first process is a process including a roughing exhaust process of the process chamber or a process including the roughing exhaust process, and the second process is a process gas introducing process involving exhausting the process chamber or a process including the process gas introducing process. The substrate processing apparatus according to claim 6, wherein: The substrate processing apparatus according to claim 7, wherein the first process is an automatic inspection process or a maintenance process of the process chamber including a roughing exhaust process of the process chamber. The substrate processing apparatus according to claim 7, wherein the second process is an automatic inspection process or a maintenance process of the processing chamber including a processing gas introduction process of the processing chamber. The substrate processing apparatus according to claim 6, wherein both of the first process and the second process are a rough exhaust process or a rough exhaust process in the processing chamber. A gas introduction system for introducing a gas into the processing chamber is constituted by a processing gas introduction system for introducing a processing gas and an inert gas introduction system for introducing an inert gas,
The inert gas introduction system includes a first introduction system capable of introducing a predetermined flow rate of the inert gas and a second introduction system capable of introducing the inert gas having a flow rate larger than that of the first introduction system. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is provided. The substrate processing apparatus according to claim 11, wherein the inert gas is introduced by at least the second introduction system when performing the particle reduction process in the processing chamber. When executing the particle reduction process in the processing chamber, first, the inert gas is first introduced by at least the second introduction system for a predetermined time, and thereafter the inert gas is supplied only by the first introduction system. The substrate processing apparatus according to claim 12. A plurality of processing chambers for introducing a gas to perform a predetermined process, an exhaust system provided in each of these processing chambers, and an exhaust system of at least two processing chambers among the exhaust systems of each of these processing chambers are connected. A common exhaust system for exhausting the exhaust gas from the exhaust system of each processing chamber after exhausting the exhaust gas from the exhaust system of each processing chamber by an abatement means, and an exhaust system for each processing chamber. A substrate processing apparatus control method configured to be able to switch between a non-detoxification common exhaust system that exhausts exhaust from a non-detoxification means without going through a detoxification means,
A control method for a substrate processing apparatus, wherein switching control between the abatement common exhaust system and the non-abatement common exhaust system is performed in accordance with a type of processing executed in each processing chamber. When performing processing in parallel in the plurality of processing chambers connected to the common exhaust system, a first process comprising a process of switching the common exhaust system to the non-detoxifying common exhaust system, While one process is being executed in one of the plurality of process chambers among the second process consisting of a process executed by switching the common exhaust system to the abatement common exhaust system, the other process 15. The method of controlling a substrate processing apparatus according to claim 14, wherein predetermined exclusive control is performed so as not to execute the processing in another processing chamber among the plurality of processing chambers. Use right reservation information storage means for storing reservation information of the right to use the common exhaust system in each processing chamber;
The exclusive control in each processing chamber is performed when one of the first processing and the second processing is performed in one processing chamber among the plurality of processing chambers connected to the common exhaust system. Determining whether or not the process is performed in another process chamber among the plurality of process chambers connected to the common exhaust system;
If it is determined that the one process is not being performed in another process chamber, the other process is performed. If it is determined that the one process is being performed in another process chamber, the other process is performed. Reservation processing in which the right-of-use reservation information storage means stores the right-of-use reservation information for the common exhaust system in a process waiting state, and thereafter executes the other processing based on the reservation information from the right-of-use reservation information storage means The method for controlling a substrate processing apparatus according to claim 15, further comprising: The substrate processing apparatus according to claim 16, wherein the reservation process executes the other process for the process chamber in the process waiting state after one process in the other process chamber is completed. Control method. When the reservation information of the right to use the common exhaust system is stored for a plurality of processing chambers in the right-of-use reservation information storage means, the other processing is performed in the order in which the reservation information is stored. The method for controlling a substrate processing apparatus according to claim 17, wherein the control method is executed. The first process is a process that does not require exhaust gas detoxification, and the process chamber includes at least a process that involves exhaust of a predetermined pressure or higher, and the second process includes a process that requires exhaust gas to be detoxified. The method for controlling a substrate processing apparatus according to claim 14, wherein the method includes at least a process including: The first process is a process including a roughing exhaust process of the process chamber or a process including the roughing exhaust process, and the second process is a process gas introducing process involving exhausting the process chamber or a process including the process gas introducing process. The method for controlling a substrate processing apparatus according to claim 19, wherein: 18. The method for controlling a substrate processing apparatus according to claim 17, wherein the first process is an automatic inspection process or a maintenance process of the process chamber including a roughing exhaust process of the process chamber. The method for controlling a substrate processing apparatus according to claim 20 or 21, wherein the second process is an automatic inspection process or a maintenance process of the process chamber including a process gas introduction process of the process chamber. 20. The method for controlling a substrate processing apparatus according to claim 19, wherein both the first process and the second process are a process including a roughing exhaust process of the process chamber or the roughing exhaust process. A gas introduction system for introducing a gas into the processing chamber is constituted by a processing gas introduction system for introducing a processing gas and an inert gas introduction system for introducing an inert gas,
The inert gas introduction system includes a first introduction system capable of introducing a predetermined flow rate of the inert gas and a second introduction system capable of introducing the inert gas having a flow rate larger than that of the first introduction system. 15. The method for controlling a substrate processing apparatus according to claim 14, further comprising: 25. The method of controlling a substrate processing apparatus according to claim 24, wherein when performing the particle reduction processing in the processing chamber, the inert gas is introduced at least by the second introduction system. When executing the particle reduction process in the processing chamber, first, the inert gas is first introduced by at least the second introduction system for a predetermined time, and thereafter the inert gas is supplied only by the first introduction system. The method for controlling a substrate processing apparatus according to claim 25. A plurality of processing chambers for introducing a gas to perform predetermined processing, an exhaust system provided in each of these processing chambers, and an exhaust system of at least two processing chambers among the exhaust systems of these processing chambers are connected. A common exhaust system for exhausting the exhaust gas from the exhaust system of each processing chamber after exhausting the exhaust gas from the exhaust system of each processing chamber by an abatement means, and an exhaust system for each processing chamber. A program for controlling a substrate processing apparatus configured to be able to switch between a non-detoxification common exhaust system that exhausts exhaust from the process without using detoxification means,
Computer
A program for executing control for switching between the abatement common exhaust system and the non-abatement common exhaust system in accordance with the type of processing executed in each processing chamber. When performing processing in parallel in the plurality of processing chambers connected to the common exhaust system, a first process comprising a process of switching the common exhaust system to the non-detoxifying common exhaust system, While one process is being executed in one of the plurality of process chambers among the second process consisting of a process executed by switching the common exhaust system to the abatement common exhaust system, the other process 28. The program according to claim 27, wherein a predetermined exclusive control is executed so that the processing is not executed in another processing chamber of the plurality of processing chambers.

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