WO2023284749A1 - 一种侧向加料的单晶炉 - Google Patents

一种侧向加料的单晶炉 Download PDF

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Publication number
WO2023284749A1
WO2023284749A1 PCT/CN2022/105269 CN2022105269W WO2023284749A1 WO 2023284749 A1 WO2023284749 A1 WO 2023284749A1 CN 2022105269 W CN2022105269 W CN 2022105269W WO 2023284749 A1 WO2023284749 A1 WO 2023284749A1
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WIPO (PCT)
Prior art keywords
hole
sealing member
single crystal
feeding
crystal furnace
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Application number
PCT/CN2022/105269
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English (en)
French (fr)
Inventor
朱永刚
周锐
李侨
董林
赵群力
曹杰
史少强
马晓康
Original Assignee
隆基绿能科技股份有限公司
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Application filed by 隆基绿能科技股份有限公司 filed Critical 隆基绿能科技股份有限公司
Priority to EP22841383.7A priority Critical patent/EP4372128A1/en
Priority to US18/578,456 priority patent/US20240287703A1/en
Publication of WO2023284749A1 publication Critical patent/WO2023284749A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the present application relates to the technical field of single crystal manufacturing equipment, in particular to a side feeding single crystal furnace.
  • the industry has begun to develop side-feeding single crystal furnaces, that is, feeding from the side of the single crystal furnace, to improve the loss of heat energy caused by feeding, and to reduce the impact of the original high-altitude drop feeding on heat. effect on field life.
  • the feeding device is usually installed on the side of the single crystal furnace, that is, it is necessary to open a through hole in the side of the furnace cylinder of the single crystal furnace and the thermal field insulation layer, so that the feeding device can enter the furnace cylinder through the through hole. feed.
  • the embodiments of the present application are proposed to provide a side-feed single crystal furnace that overcomes the above problems or at least partially solves the above problems.
  • the embodiment of the present application discloses a single crystal furnace with side feeding. device, the insulation layer is located between the crucible and the furnace body, wherein,
  • a first through hole is opened on the side of the furnace body, and a second through hole is opened at a position opposite to the first through hole in the thermal insulation layer;
  • the lifting device is connected with the sealing member, and is used to drive the sealing member to switch between a raised state and a lowered state.
  • the sealing member rises, and the feeding device can pass through the sealing member.
  • the first through hole and the second through hole are opposite to the opening of the crucible.
  • the sealing member descends, and the sealing member can seal the second through hole.
  • the single crystal furnace further includes a protection cylinder, and the protection cylinder is embedded in the second through hole;
  • the protective cylinder is provided with a third through hole, and the third through hole is used for passing through the feeding device.
  • the single crystal furnace includes a flexible hanging piece, one end of the hanging piece is connected to the lifting device, and the other end of the hanging piece is used to hang the sealing element.
  • a counterweight is further provided in the single crystal furnace, and the counterweight is installed at the end where the sealing member is connected to the pendant.
  • a first inclined plane structure is provided at the position where the thermal insulation layer is opposite to the sealing member, and a second inclined plane structure is provided at the position where the sealing member is opposite to the thermal insulation layer;
  • the first slope structure includes: a first sub-slope structure and a second sub-slope structure, and the second through hole is disposed between the first sub-slope structure and the second sub-slope structure;
  • both the first sub-slope structure and the second sub-slope structure are in contact with the second slope structure.
  • the first included angle between the first slope structure and the axis of the thermal insulation layer is 5-15°
  • the second angle between the second slope structure and the axis of the thermal insulation layer It is 75-85°.
  • the feeding device further includes a feeding valve connected to the first through hole and the feeding device respectively;
  • the feeding valve is opened, and the feeding device can pass through the first through hole and the second through hole to be opposite to the opening of the crucible.
  • the feeding device includes a feeding mechanism and a telescopic tube, the charging mechanism is connected to the telescopic tube, and the telescopic tube is connected to the feeding valve;
  • the telescopic tube includes a compressed state and an expanded state.
  • the feeding mechanism can be driven to pass through the first through hole, the second through hole and the crucible.
  • the opening is opposite.
  • the lifting device includes: a driving mechanism and a lifting mechanism, the driving mechanism is arranged in the furnace body, the driving mechanism is connected to the lifting mechanism, and the lifting mechanism is connected to the sealing member;
  • the driving mechanism is used to drive the lifting mechanism to rise or fall, and the rising or falling of the lifting mechanism drives the sealing member to switch between the rising state and the falling state.
  • the single crystal furnace further includes a heat exchange mechanism, the heat exchange mechanism is arranged above the crucible, the lifting device is connected to the heat exchange mechanism, and the heat exchange mechanism is connected to the sealing member connect;
  • the lifting device is used to drive the heat exchange mechanism to ascend or descend, and the ascending or descending of the heat exchanging mechanism drives the sealing member to switch between the ascending state and the descending state.
  • the lifting device can drive the sealing member to switch to the rising state, so that the charging device can pass through the first through hole on the side of the furnace body and the second through hole on the insulation layer and the The openings of the crucibles are opposite to each other, so that the side feeding of the single crystal furnace can be realized, which can improve the influence of the high-altitude drop feeding on the life of the thermal field.
  • the lifting device can also drive the sealing member to switch to the descending state, so that the sealing member can block and protect the second through hole on the heat preservation layer, improve the life of the thermal field, and reduce the temperature loss in the non-feeding condition. Heat energy loss, stabilize the temperature field and air flow balance in the furnace body of the single crystal furnace, reduce the probability of disconnection and polycrystalline growth, and improve the crystal pulling efficiency and quality of single crystal silicon.
  • Fig. 1 is the structural representation of a kind of single crystal furnace of the present application
  • Fig. 2 is the structural representation of another kind of single crystal furnace of the present application.
  • Fig. 3 is a schematic structural view of another single crystal furnace of the present application.
  • Fig. 4 is a schematic structural diagram of another single crystal furnace of the present application.
  • 1-furnace body 11-first through hole, 2-feeding device, 21-feeding valve, 22-feeding mechanism, 23-telescopic tube, 3-insulation layer, 31 first slope structure, 311-first sub-slope structure , 312-second sub-slope structure, 32-second through hole, 41-seal, 411-second slope structure, 42-counterweight, 5-crucible, 6-lifting device, 7-protective cylinder, 71- The third through hole, 81-the pendant, 82-the rigid connecting plate, 9-the heat exchange mechanism.
  • One of the core ideas of the embodiments of the present application is to provide a side-feed single crystal furnace.
  • FIG. 1 it shows a schematic structural view of a single crystal furnace of the present application.
  • the present application provides a single crystal furnace with side feeding, and the single crystal furnace may specifically include: a furnace body 1.
  • the feeding device 2 and the insulation layer 3, the seal 41, the crucible 5 and the lifting device 6 arranged in the furnace body 1, the insulation layer 3 can be located between the crucible 5 and the furnace body 1, wherein the side of the furnace body 1
  • a first through hole 11 can be provided, and a second through hole 32 can be provided at the position where the insulation layer 3 is opposite to the first through hole 11; Switch between the descending state.
  • the sealing member 41 rises, and the feeding device 2 can pass through the first through hole 11 and the second through hole 32 to be opposite to the opening of the crucible 5.
  • the sealing member 41 descends.
  • the seal 41 may seal the second through hole 32 .
  • the lifting device 6 can drive the sealing member 41 to switch to the rising state, so that the charging device 2 can pass through the first through hole 11 on the side of the furnace body 1 and the second through hole 32 on the insulation layer 3 and The openings of the crucible 5 face each other to realize lateral feeding of the single crystal furnace, which can improve the influence of falling feeding from high altitude on the service life of the thermal field.
  • the lifting device 6 can also be switched to the descending state, and the sealing member 41 can be lowered, so that the sealing member 41 can block and protect the second through hole 32 on the insulation layer 3, improve the life of the thermal field, and reduce the heat energy in the non-feeding situation. Loss, stabilize the temperature field and air flow balance in the furnace body 1 of the single crystal furnace, reduce the probability of disconnection and polycrystalline growth, and improve the crystal pulling efficiency and quality of single crystal silicon.
  • the first through hole 11 is arranged on the side of the furnace body 1, and the charging device 2 is also arranged on the side of the furnace body 1, so that the charging device 2 can feed into the crucible 5 from the side of the furnace body 1, which can reduce the The loss of heat energy caused during the process of stopping feeding; it can also avoid the impact of high-altitude falling feeding on the life of the thermal field; and the feeding device 2 is set on the side of the furnace body 1, which can break the restriction on the weight of feeding, save feeding time and reduce feeding Number of workers.
  • the power consumption of the single crystal furnace in the embodiment of the present application can be reduced by more than 60%.
  • the lifting device 6 drives the sealing member 41 to switch to the rising state, the sealing member 41 rises, the second through hole 32 is opened, and the feeding device 2 can pass through the first through hole 11 and the second through hole 32, and to Add raw materials in the crucible 5 .
  • the lifting device 6 can drive the sealing member 41 to switch to the descending state, and the sealing member 41 can be closely attached to the insulation layer 3 to block the second through hole 32.
  • the single crystal furnace in the embodiment of the present application is a device that melts polycrystalline material with a heater and grows a single crystal by Czochralski method in an environment of inert gas (mainly nitrogen and helium).
  • the furnace body 1 in the embodiment of the present application is the equipment body of the single crystal furnace, which is used for installing and connecting the insulation layer 3 , the sealing member 41 , the crucible 5 , the lifting device 6 and the feeding device 2 .
  • the feeding device 2 in the embodiment of the present application is a device for storing raw materials and putting the raw materials into the crucible 5 .
  • the crucible 5 in the embodiment of the present application is an important part of a chemical instrument. It is a container that can melt and refine metal liquid and solid-liquid heating and reaction, and is the basis for ensuring the smooth progress of chemical reactions. Specifically, in the embodiment of the present application, the crucible 5 is a container for melting raw materials to grow single crystal silicon.
  • the insulation layer 3 in the embodiment of the present application may be an insulation interlayer used between the furnace body 1 and the heater in the single crystal furnace.
  • the heater can be used to heat the raw material in the crucible 5 .
  • the insulation layer 3 can be located between the crucible 5 and the furnace body 1 to prevent heat loss and stabilize the growth environment of single crystal silicon.
  • the insulation layer 3 can be a material with many advantages such as high heat preservation rate, windproof, rainproof, anti-aging, flame retardant, strong water resistance, dustproof, moistureproof, acid and alkali resistance, easy retractable, long service life, etc. insulation felt.
  • the sealing member 41 in the embodiment of the present application can be used to seal the thermal insulation layer 3 to further improve the thermal insulation effect of the thermal insulation layer 3 .
  • both the thermal insulation layer 3 and the sealing member 41 can be heat insulating material pieces.
  • both the heat insulating layer 3 and the sealing member 41 are made of heat insulating material, which can reduce heat loss and increase the crystal pulling speed of single crystal silicon.
  • the materials of the insulation layer 3 and the sealing member 41 may be graphite soft felt, solidified carbon felt, etc., which are not specifically limited in this embodiment of the present application.
  • the lifting device 6 in the embodiment of the present application can drive the sealing member 41 to rise or fall.
  • the lifting device 6 may include a driving motor, and the driving motor may provide a motive force.
  • the drive motor can be connected with the seal 41 to directly drive the seal 41 to rise or fall.
  • a heat shielding device is also provided in the furnace body 1, and the heat shielding device may be a structural component in the single crystal furnace for passing water through the interlayer satisfying the process.
  • the heat shielding device may include a water pipe, and the water pipe may include a water inlet pipe and a water outlet pipe, and the hardness of the water inlet pipe and the water outlet pipe is relatively high.
  • the lifting device 6 can be connected with the water pipe, and drives the heat shielding device to rise or fall, and the heat shielding device can be a heat exchanger or a heat shield.
  • the sealing member 41 can also be connected to a water pipe, so that the driving motor can also drive the sealing member 41 to rise or fall through the water pipe, which is not specifically limited in this embodiment of the present application.
  • first through hole 11 and the second through hole 32 may be circular, quadrilateral, pentagonal or hexagonal, etc., which are not specifically limited in this embodiment of the present application.
  • the single crystal furnace can also include a protective cylinder 7, which can be embedded in the second through hole 32; the protective cylinder 7 can be provided with a third through hole 71, and the third through hole 71 can be Used for threading the feeding device 2.
  • the protective cylinder 7 is embedded in the second through hole 32, and is provided with a third through hole 71, so that the feeding device 2 can pass through the first through hole 11 and the third through hole 71 to the crucible in sequence. 5 to feed.
  • the airflow can scour the third through hole 71, so that the protective cylinder 7 can protect the insulation layer 3, alleviate the pulverization phenomenon caused by the airflow scour to the insulation layer 3, and improve the service life of the insulation layer 3.
  • the furnace body 1 can be evacuated with an inert gas, and the inert gas with pressure can enter the furnace body 1 from the first through hole 11, and the third through hole of the protective cylinder 7
  • the holes 71 are scoured by high-temperature air flow.
  • the inert gas can also drive volatiles out of the furnace body 1 , and the inert gas can also flush the third through hole 71 of the protective cylinder 7 with a high-temperature air flow.
  • the protection tube 7 is embedded in the second through hole 32 of the insulation layer 3, which can protect the insulation layer 3 and prevent it from being scoured by the high-temperature air flow, thereby preventing the insulation layer 3 from being washed by the second through hole 32. Pulverization occurs at the through hole 32, which improves the service life of the insulation layer 3.
  • the protective tube 7 can better protect the heat insulating layer 3.
  • the heat insulating layer 3 in the embodiment of the present application has no second through hole 32 compared with the prior art.
  • the insulating layer 3 of the through hole 32 can have a substantially equal service life.
  • the material of the protective cylinder 7 includes at least one of graphite and carbon-carbon composite materials.
  • the material of the protective cylinder 7 is graphite or carbon-carbon composite material, which can improve the protective effect of the protective cylinder 7 on the insulation layer 3 and further increase the service life of the insulation layer 3 .
  • the outer side of the protective tube 7 can be connected to the second through hole 32 of the thermal insulation layer 3 , and the outer structure of the protective tube 7 is adapted to the structure of the second through hole 32 .
  • the structure of the second through hole 32 is circular, and the outer structure of the protective tube 7 is also circular; the structure of the second through hole 32 is pentagonal, and the outer structure of the protective tube 7 is also pentagonal.
  • the structure of the third through hole 71 may be circular, quadrangular, pentagonal, or hexagonal, etc., which is not specifically limited in this embodiment of the present application.
  • the single crystal furnace may include a flexible hanging piece 81 , one end of the hanging piece 81 may be connected to the lifting device 6 , and the other end of the hanging piece 81 may be used to hang the seal 41 .
  • the flexible feature refers to the feature that an object can deform arbitrarily under the action of force, and can maintain the deformation when the force disappears. It can also be interpreted as flexibility, or a characteristic of an object relative to rigidity. Flexibility refers to a physical property that an object deforms after being subjected to a force, and the object itself cannot return to its original shape after the force is lost. After a rigid object is stressed, its shape can be regarded as unchanged from a macroscopic point of view.
  • the pendant 81 with flexible features is used to suspend the seal 41.
  • the seal 41 In the lowered state, the seal 41 can be attached to the insulation layer 3 by its own gravity, thereby realizing the second through hole 32 of the insulation layer 3. The sealing can improve the sealing effect.
  • the pendant 81 has a flexible feature, and is mainly guided freely by the structure of the suspended object and its own gravity. Specifically, the pendant 81 can be bent at will, and the movement track of the lifting sealing member 41 can also be changed arbitrarily. When the pendant 81 is lowered to the limit position, the pendant 81 may not apply any force to the sealing member 41 .
  • the pendant 81 may include structures such as soft ropes and chains, which are not specifically limited in this embodiment of the present application.
  • the pendant 81 can also be used with a rigid connection plate 82 , as shown in FIG. 1 , one end of the rigid connection plate 82 can be connected to a water pipe, and the pendant 81 can be connected to the other end of the rigid connection plate 82 .
  • the lifting device 6 drives the sealing member 41 to switch to the rising state, the sealing member 41 rises, the second through hole 32 is opened, and the feeding device 2 can pass through the first through hole 11 and the second through hole 32, and to Add raw materials in the crucible 5 .
  • the lifting device 6 can be switched to the descending state.
  • the sealing member 41 is closely tangent to the insulation layer 3 under the action of gravity, and slides downward.
  • the lifting device 6 can continue to descend, the pendant 81 can be in a relaxed state, and the sealing member 41 can be in close contact with the insulation layer 3 to achieve the purpose of blocking the second through hole 32 .
  • a counterweight 42 may also be provided in the single crystal furnace, and the counterweight 42 may be installed at the end where the sealing member 41 is connected to the hanging member 81 .
  • installing a counterweight 42 at the end where the seal 41 is connected to the pendant 81 can increase the weight of the seal 41 and further improve the sealing effect of the seal 41 on the second through hole 32 of the insulation layer 3 .
  • the counterweight 42 is a weight that can increase the self-weight of the sealing member 41 and maintain balance.
  • the counterweight 42 may include ordinary sand-type counterweight iron or extra-heavy iron, which can be set according to actual needs, which is not specifically limited in this embodiment of the present application.
  • the position where the insulation layer 3 is opposite to the sealing member 41 can be provided with a first inclined plane structure 31, and the position where the sealing member 41 is opposite to the insulating layer 3 can be provided with a second inclined plane structure 411;
  • the first slope structure 31 and the second slope structure 411 can be bonded together.
  • the position where the insulation layer 3 is opposite to the sealing member 41 is the first inclined plane structure 31, and the position where the sealing member 41 is opposite to the insulating layer 3 is the second inclined plane structure 411.
  • the sealing member 41 depends on its own gravity and When the insulation layer 3 is bonded, the tightness of bonding is better, and the sealing effect of the sealing member 41 on the second through hole 32 of the insulation layer 3 can be further improved.
  • the shapes of the first slope structure 31 and the second slope structure 411 are matched.
  • the first slope structure 31 includes a plurality of protrusions, and the second slope structure 411 is provided with a plurality of grooves at positions opposite to the protrusions;
  • the first slope structure 31 includes a plurality of grooves, and the second slope structure 411 and the A plurality of protrusions are provided at positions opposite to the protrusions;
  • the first slope structure 31 is a planar structure, and the second slope structure 411 may also be a planar structure.
  • the specific arrangement manner of the first slope structure 31 and the second slope structure 411 can be set according to actual needs, which is not specifically limited in this embodiment of the present application.
  • the first slope structure 31 can be an integral structure, and the second through hole 32 can be a through hole opened on the first slope structure 31; or, the first slope structure 31 can be composed of multiple split structures.
  • the second through hole 32 may be disposed between multiple split structures, which is not specifically limited in this embodiment of the present application.
  • the first slope structure 31 may include: a first sub-slope structure 311 and a second sub-slope structure 312, and the second through hole 32 may be provided between the first sub-slope structure 311 and the second sub-slope structure 312;
  • the lifting device 6 drives the sealing member 41 to switch to the descending state, both the first sub-slope structure 311 and the second sub-slope structure 312 can be attached to the second slope structure.
  • both the first sub-slope structure 311 and the second sub-slope structure 312 are attached to the second slope structure, because the second through hole 32 is disposed between the first sub-slope structure 311 and the second sub-slope structure 312, so that the sealing member 41 can seal the second through hole 32 to reduce heat loss.
  • the first included angle between the first slope structure 31 and the axis of the thermal insulation layer 3 may be 5° to 15°
  • the second angle between the second slope structure 411 and the axis of the thermal insulation layer 3 may be 75°. ⁇ 85°.
  • the first included angle is 5-15°, and the second included angle may be 75-85°, so that the bonding effect between the sealing member 41 and the insulation layer 3 is better.
  • the first included angle can be 4°, 5°, 10°, 15°, 20°, etc.
  • the second included angle can be 70°, 75°, 80°, 85°, 90°, etc., specifically according to The actual requirements are set, and this embodiment of the present application does not specifically limit it.
  • the first included angle is 0° and the second included angle is 90°
  • the first inclined plane structure 31 and the second inclined plane structure 32 are arranged in parallel, so that the sealing member 41 can face the second side of the side blocking insulation layer 3 directly.
  • Through hole 32 a pendant 81 can be used to connect the lifting device and the seal 41 respectively, so that the pendant 81 can drive the seal 41 to rise or fall;
  • a hard pendant can also be used to connect the lifting device and the seal 41 respectively, so that the hard pendant can drive The seal 41 is raised or lowered.
  • the first included angle is 5° to 15°
  • the second included angle is 75° to 85°
  • the pendant 81 is used to hang the seal 41 .
  • Holes 32 and the use of rigid pendants to connect the seal 41 can reduce consumption by about 20%.
  • the feeding device 2 can also include a feeding valve 21, which can be connected to the first through hole 11 and the feeding device 2 respectively; when the feeding valve 21 is opened, the feeding device 2 can pass through the first through hole 11 and the second feeding device.
  • the through hole 32 is opposite to the opening of the crucible 5 .
  • the feeding valve 21 is connected to the first through hole 11 and the feeding device 2 respectively.
  • the feeding valve 21 can be opened, and the feeding device 2 can pass through the first through hole 11 and the second through hole.
  • the hole 32 is opposite to the opening of the crucible 5, and feeds into the crucible 5; when no feeding is required, the feeding valve 21 can be closed, effectively isolating the feeding device 2 and the furnace body 1.
  • the feeding valve 21 may be an electric control valve or a manual valve, which is not specifically limited in this embodiment of the present application. As shown in Figure 1, a manual valve is shown.
  • the feeding device 2 can include a feeding mechanism 22 and a telescopic tube 23, the charging mechanism 22 can be connected with the telescopic tube 23, and the telescopic tube 23 can be connected with the feeding valve 21; the telescopic tube 23 can include a compressed state and an expanded state, and the telescopic tube 23 is switched to the compressed state, it can drive the feeding mechanism 22 to pass through the first through hole 11 and the second through hole 32 to face the opening of the crucible 5 .
  • the telescopic tube 23 when the telescopic tube 23 is switched to the compressed state, the telescopic tube 23 can drive the feeding mechanism 22 to pass through the first through hole 11 and the second through hole 32 to be opposite to the opening of the crucible 5, so that the feeding mechanism 22 The raw materials can be introduced into the crucible 5, making feeding more convenient and fast.
  • the telescopic tube 23 may be a corrugated tube, or the telescopic tube 23 may also be a sleeve formed by socketing a plurality of tubes, which may be set according to actual needs, which is not specifically limited in this embodiment of the present application.
  • the telescopic tube 23 is switched from the expanded state to the compressed state, and the feeding mechanism 22 can pass through the feeding valve 21, the first through hole 11 and the third through hole 71 from the original position in sequence, and deliver the raw material to the crucible 5.
  • the telescopic tube 23 is gradually expanded, and when the feeding device 2 withdraws from the second through hole 32 , the sealing member 41 can descend immediately to seal the second through hole 32 .
  • the telescopic tube 23 is switched from the telescopic state to the unfolded state, the feeding mechanism 22 can return to the original position, and the feeding valve 21 can be closed.
  • the lifting device 6 may include: a driving mechanism and a lifting mechanism, the driving mechanism may be arranged in the furnace body 1, the driving mechanism may be connected with the lifting mechanism, and the lifting mechanism may be connected with the sealing member 41;
  • the driving mechanism can be used to drive the lifting mechanism to rise or fall, and the rising or falling of the lifting mechanism can drive the sealing member 41 to switch between the rising state and the falling state.
  • the sealing member 41 can be switched between the raised state and the lowered state, and the convenience of use of the sealing member 41 can be improved.
  • the lifting device 6 may be disposed close to the sealing member 41 , as shown in FIG. 1 , the lifting device 6 may also be disposed above the sealing member 41 , which is not specifically limited in this embodiment of the present application.
  • the single crystal furnace may include a heat exchange mechanism 9, which may be arranged above the crucible 5, and the lifting device 6 is connected to the heat exchange mechanism 9,
  • the heat exchange mechanism 9 is connected to the seal 41; the lifting device 6 is used to drive the heat exchange mechanism 9 to rise or fall, and the rise or fall of the heat exchange mechanism 9 drives the seal 41 to switch between the rising state and the falling state.
  • the lifting device 6 can drive the heat exchange mechanism 9 to rise or fall, and the rise or fall of the heat exchange mechanism 9 can drive the seal 41 to switch between the rising state and the falling state, so that the heat exchange mechanism 9 and the sealing
  • the pieces 41 can share one lifting device 6, which can save the layout space and cost of the single crystal furnace.
  • the heat exchange device 9 may be a heat shielding device.
  • the lifting device can drive the sealing member to switch to the rising state, so that the charging device can pass through the first through hole on the side of the furnace body and the second through hole on the insulation layer and the The openings of the crucibles are opposite to each other, so that the side feeding of the single crystal furnace can be realized, which can improve the influence of the high-altitude drop feeding on the life of the thermal field.
  • the lifting device can also drive the sealing member to switch to the descending state, so that the sealing member can block and protect the second through hole on the heat preservation layer, improve the life of the thermal field, and reduce the temperature loss in the non-feeding condition. Heat energy loss, stabilize the temperature field and air flow balance in the furnace body of the single crystal furnace, reduce the probability of disconnection and polycrystalline growth, and improve the crystal pulling efficiency and quality of single crystal silicon.

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Metallurgy (AREA)
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Abstract

一种侧向加料的单晶炉，单晶炉包括：炉体、加料装置以及设于炉体内的保温层、密封件、坩埚和升降装置，保温层位于坩埚与炉体之间，其中，炉体的侧部开设有第一通孔，保温层与第一通孔相对的位置开设有第二通孔；升降装置与密封件连接，用于带动密封件在上升状态和下降状态之间切换，在上升状态下，密封件上升，加料装置可穿过第一通孔和第二通孔与坩埚开口处相对，在下降状态下，密封件下降，密封件可密封第二通孔。该单晶炉可以提高热场寿命，降低非加料情况下的热能损失，稳定炉体内的温度场和气流平衡，提高单晶硅的拉晶效率及品质。

Description

一种侧向加料的单晶炉
本申请要求在2021年07月15日提交中国专利局、申请号为202110800642.X、名称为“一种侧向加料的单晶炉”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及单晶制造设备技术领域，特别是涉及一种侧向加料的单晶炉。
背景技术
随着光伏行业的发展，国内晶硅行业的竞争也日益加剧。目前，为了减少单晶制造的成本，行业内开始开发侧向加料的单晶炉，即从单晶炉的侧向投料，以改善因投料引起的热能的损失，以及降低原高空坠落加料对热场寿命的影响。在实际应用中，通常在单晶炉的侧向设置加料装置，即需要在单晶炉的炉筒以及热场保温层的侧向开设通孔，以使加料装置通过该通孔向炉筒内加料。
然而，在炉筒和保温层的侧向开设通孔，容易导致该通孔所在位置漏热严重，增加单晶炉的功耗；而且，还容易打破单晶炉内的温度场和气流平衡，降低单晶硅的拉晶效率及品质。
发明内容
鉴于上述问题，提出了本申请实施例以便提供一种克服上述问题或者至少部分地解决上述问题的一种侧向加料的单晶炉。
为了解决上述问题，本申请实施例公开了一种侧向加料的单晶炉，所述单晶炉包括：炉体、加料装置以及设于所述炉体内的保温层、密封件、坩埚和升降装置，所述保温层位于所述坩埚和所述炉体之间，其中，
所述炉体的侧部开设有第一通孔，所述保温层与所述第一通孔相对的位置开设有第二通孔；
所述升降装置与所述密封件连接，用于带动所述密封件在上升状态和下 降状态之间切换，在所述上升状态下，所述密封件上升，所述加料装置可穿过所述第一通孔和第二通孔与所述坩埚开口处相对，在所述下降状态下，所述密封件下降，所述密封件可密封所述第二通孔。
可选地，所述单晶炉还包括保护筒，所述保护筒嵌设于所述第二通孔内；
所述保护筒设有第三通孔，所述第三通孔用于穿设所述加料装置。
可选地，所述单晶炉包括具有柔性特征的挂件，所述挂件的一端与所述升降装置连接，所述挂件的另一端用于悬挂所述密封件。
可选地，所述单晶炉内还设有配重块，所述配重块安装于所述密封件与所述挂件连接的一端。
可选地，所述保温层与所述密封件相对的位置设有第一斜面结构，所述密封件与所述保温层相对的位置设有第二斜面结构；
在所述升降装置带动所述密封件切换至所述下降状态的情况下，所述第一斜面结构和所述第二斜面结构贴合。
可选地，所述第一斜面结构包括：第一子斜面结构和第二子斜面结构，所述第二通孔设于所述第一子斜面结构和所述第二子斜面结构之间；
在所述升降装置带动所述密封件切换至所述下降状态的情况下，所述第一子斜面结构和所述第二子斜面结构均与所述第二斜面结构贴合。
可选地，所述第一斜面结构与所述保温层的轴线之间的第一夹角为5～15°，所述第二斜面结构与所述保温层的轴线之间的第二夹角为75～85°。
可选地，所述加料装置还包括加料阀，所述加料阀分别与所述第一通孔和所述加料装置连接；
所述加料阀打开，所述加料装置可穿过所述第一通孔和第二通孔与所述坩埚开口处相对。
可选地，所述加料装置包括加料机构和伸缩管，所述加料机构与所述伸缩管连接，所述伸缩管与所述加料阀连接；
所述伸缩管包括压缩状态和展开状态，所述伸缩管切换至所述压缩状态的情况下，可带动所述加料机构穿过所述第一通孔和所述第二通孔与所述坩埚开口处相对。
可选地，所述升降装置包括：驱动机构和升降机构，所述驱动机构设于 所述炉体内，所述驱动机构和所述升降机构连接，所述升降机构与所述密封件连接；
所述驱动机构用于驱动所述升降机构上升或下降，所述升降机构的上升或下降带动所述密封件在所述上升状态和所述下降状态之间切换。
可选地，所述单晶炉还包括换热机构，所述换热机构设于所述坩埚的上方，所述升降装置与所述换热机构连接，所述换热机构与所述密封件连接；
所述升降装置用于驱动所述换热机构上升或下降，所述换热机构的上升或下降带动所述密封件在所述上升状态和所述下降状态之间切换。
本申请实施例包括以下优点：
在本申请实施例中，所述升降装置可以带动所述密封件切换至上升状态，使得所述加料装置可以穿过炉体侧部的第一通孔以及保温层上的第二通孔与所述坩埚开口处相对，实现单晶炉的侧向加料，可以改善高空坠落加料对热场寿命的影响。而且，所述升降装置还可以带动所述密封件切换至下降状态，使得所述密封件可以封堵和保护所述保温层上的第二通孔，提高热场寿命，降低非加料情况下的热能损失，稳定单晶炉的炉体内的温度场和气流平衡，降低断线和生长多晶的概率，提高单晶硅的拉晶效率及品质。
附图说明
图1是本申请的一种单晶炉的结构示意图；
图2是本申请的另一种单晶炉的结构示意图；
图3是本申请的又一种单晶炉的结构示意图；
图4是本申请的再一种单晶炉的结构示意图。
附图标记：
1-炉体，11-第一通孔，2-加料装置，21-加料阀，22-加料机构，23-伸缩管，3-保温层，31第一斜面结构，311-第一子斜面结构，312-第二子斜面结构，32-第二通孔，41-密封件，411-第二斜面结构，42-配重块，5-坩埚，6-升降装置，7-保护筒，71-第三通孔，81-挂件，82-硬性连接板，9-换热机构。
具体实施例
为使本申请的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本申请作进一步详细的说明。
本申请实施例的核心构思之一在于，提供一种侧向加料的单晶炉。
参照图1，示出了本申请的一种单晶炉的结构示意图，如图1所示，本申请提供了一种侧向加料的单晶炉，所述单晶炉具体可以包括：炉体1、加料装置2以及设于炉体1内的保温层3、密封件41、坩埚5和升降装置6，保温层3可以位于坩埚5和炉体1之间，其中，炉体1的侧部可以开设有第一通孔11，保温层3与第一通孔11相对的位置可以开设有第二通孔32；升降装置6可以与密封件41连接，用于带动密封件41在上升状态和下降状态之间切换，在上升状态下，密封件41上升，加料装置2可以穿过第一通孔11和第二通孔32与坩埚5开口处相对，在下降状态下，密封件41下降，密封件41可以密封第二通孔32。
在本申请实施例中，升降装置6可以带动密封件41切换至上升状态，使得加料装置2可以穿过炉体1侧部的第一通孔11以及保温层3上的第二通孔32与坩埚5开口处相对，实现单晶炉的侧向加料，可以改善高空坠落加料对热场寿命的影响。而且，升降装置6还可以切换至下降状态，密封件41可以下降，使得密封件41可以封堵和保护保温层3上的第二通孔32，提高热场寿命，降低非加料情况下的热能损失，稳定单晶炉的炉体1内的温度场和气流平衡，降低断线和生长多晶的概率，提高单晶硅的拉晶效率及品质。
具体地，第一通孔11设置在炉体1的侧部，加料装置2也设置在炉体1的侧部，使得加料装置2可以从炉体1的侧部向坩埚5内加料，可以减少停止加料的过程中造成的热能损失；还可以避免高空坠落加料对热场寿命的影响；而且加料装置2设置在炉体1的侧部，可以打破对加料重量的限制，节省加料工时，减少加料作业人员数量。
在实际应用中，相比现有技术中未设置密封件41封堵保温层3的第二通孔32的单晶炉，本申请实施例中的单晶炉的功耗可以降低60％以上。
如图1所示，升降装置6带动密封件41切换至上升状态，密封件41上升，第二通孔32开放，加料装置2可以穿过第一通孔11和第二通孔32，并向坩埚5内添加原料。如图2所示，加料完成之后，升降装置6可以带动密 封件41切换至下降状态，密封件41可以与保温层3紧密贴合，封堵第二通孔32。
本申请实施例中的单晶炉是一种在惰性气体(氮气、氦气为主)环境中，用加热器将多晶材料熔化，用直拉法生长单晶的设备。本申请实施例中的炉体1为单晶炉的设备本体，用于安装和连接保温层3、密封件41、坩埚5、升降装置6以及加料装置2。
本申请实施例中的加料装置2为用于存放原料，并可以将原料投放至坩埚5内的装置。
本申请实施例中的坩埚5为化学仪器的重要组成部分，是可以熔化和精炼金属液体以及固液加热、反应的容器，是保证化学反应顺利进行的基础。具体地，在本申请实施例中，坩埚5为熔化原料生长单晶硅的容器。
本申请实施例中的保温层3可以是单晶炉内的用于炉体1与加热器之间的保温夹层。加热器可以用于对坩埚5内的原料进行加热。保温层3可以位于坩埚5和炉体1之间，防止热量散失，稳定单晶硅的生长环境。具体地，保温层3可以为一种具备保温率高、防风、防雨雪、抗老化、阻燃、漓水性强、防尘、防潮、耐酸碱、收放自如、使用寿命长等诸多优点的保温毡。
本申请实施例中的密封件41可以用于密封保温层3，进一步提高保温层3的隔热效果。
具体地，保温层3和密封件41均可以为隔热材料件。在实际应用中，保温层3和密封件41均为隔热材料件，可以减少热量散失，提高单晶硅的拉晶速度。
具体地，保温层3和密封件41的材料可以为石墨软毡、固化碳毡等，本申请实施例对此不作具体限定。
本申请实施例中的升降装置6可以带动密封件41上升或下降。具体地，升降装置6可以包括驱动电机，驱动电机可以提供原动力。所述驱动电机可以与密封件41连接，直接驱动密封件41上升或下降。
在实际应用中，炉体1内还设有热屏蔽装置，所述热屏蔽装置可以是单晶炉内为满足工艺的夹层通水的结构部件。所述热屏蔽装置可以包括水管，水管可以包括进水管和出水管，所述进水管和所述出水管的硬度较高。升降 装置6可以与水管连接，并带动所述热屏蔽装置上升或下降，所述热屏蔽装置可以为换热器或者热屏。
具体地，密封件41还可以与水管连接，这样，驱动电机还可以通过水管带动密封件41上升或下降，本申请实施例对此不作具体限定。
具体地，所述第一通孔11和所述第二通孔32的结构可以为圆形、四边形、五边形或六边形等，本申请实施例对此不作具体限定。
本申请的一些实施例中，单晶炉还可以包括保护筒7，保护筒7可以嵌设于第二通孔32内；保护筒7可以设有第三通孔71，第三通孔71可以用于穿设加料装置2。
在本申请实施例中，保护筒7嵌设于第二通孔32内，并设有第三通孔71，这样，加料装置2可以依次通过第一通孔11和第三通孔71向坩埚5内加料。在实际应用中，气流可以冲刷第三通孔71，使得保护筒7可以保护保温层3，缓解气流冲刷对保温层3造成的粉化现象，提高保温层3的使用寿命。
具体地，在向坩埚5内加料之前，可以先对炉体1进行冲惰性气体排空，带压惰性气体可以从第一通孔11进入炉体1内，并对保护筒7的第三通孔71进行高温气流冲刷。在单晶硅拉晶过程中，惰性气体还可以带动挥发物排出炉体1，惰性气体还会对保护筒7的第三通孔71进行高温气流冲刷。在本申请实施例中，保护筒7嵌设于保温层3的第二通孔32内，可以对保温层3起到保护作用，避免其受到高温气流的冲刷，进而避免保温层3在第二通孔32处出现粉化现象，提高保温层3的使用寿命。
在实际应用中，保护筒7可以较好的保护保温层3，相比未开设第二通孔32的保温层3，本申请实施例中的保温层3相比现有技术中未开设第二通孔32的保温层3，使用寿命可以基本持平。
具体地，保护筒7的材质至少包括石墨和碳碳复合材料中的至少一种。在实际应用中，保护筒7的材质选择石墨或碳碳复合材料，可以提高保护筒7对保温层3的保护效果，进一步提高保温层3的使用寿命。
具体地，保护筒7的外侧可以连接于保温层3的第二通孔32内，保护筒7的外侧结构与第二通孔32的结构适配。例如，第二通孔32的结构为圆 形，保护筒7的外侧结构也为圆形；第二通孔32的结构为五边形，保护筒7的外侧结构也为五边形。
具体地，第三通孔71的结构可以为圆形、四边形、五边形或六边形等，本申请实施例对此不作具体限定。
可选地，单晶炉可以包括具有柔性特征的挂件81，挂件81的一端可以与升降装置6连接，挂件81的另一端可以用于悬挂密封件41。
具体地，柔性特征是指物体在受力作用下可以发生任意变形，受力消失可以保持形变的特征，也可解释为挠性，或者相对刚性而言的一种物体特性。挠性是指物体受力后变形，作用力失去之后物体自身不能恢复原来形状的一种物理性质。而刚性物体受力后，在宏观来看其形状可视为没有发生改变。
在本申请实施例中，使用具有柔性特征的挂件81悬挂密封件41，在下降状态下，密封件41可以依靠自身重力与保温层3贴合，进而实现对保温层3的第二通孔32的密封，可以提高密封效果。
具体地，挂件81具有柔性特征，主要是靠被悬挂物结构以及自身重力作用进行自由导向。具体地，挂件81可以随意弯曲，提升密封件41的运动轨迹也可以任意变化。在挂件81下降至极限位置的情况下，挂件81可以不向密封件41施加任何作用力。挂件81可以包括软绳、链条等结构，本申请实施例对此不作具体限定。
具体地，挂件81还可以配合硬性连接板82使用，如图1所示，硬性连接板82的一端可以与水管连接，挂件81可以连接在硬性连接板82的另一端。
如图1所示，升降装置6带动密封件41切换至上升状态，密封件41上升，第二通孔32开放，加料装置2可以穿过第一通孔11和第二通孔32，并向坩埚5内添加原料。如图2所示，加料完成之后，升降装置6可以切换至下降状态，密封件41在重力作用下，与保温层3紧密相切，滑动向下，当密封件41下降至下限时，升降装置6可以继续下降，挂件81可以处于放松状态，密封件41可以与保温层3密切接触，达到封堵第二通孔32的目的。
可选地，单晶炉内还可以设有配重块42，配重块42可以安装于密封件41与挂件81连接的一端。
在本申请实施例中，在密封件41与挂件81连接的一端安装配重块42，可以增加密封件41的重量，进一步提高密封件41对保温层3的第二通孔32的密封效果。
具体地，配重块42为可以增加密封件41的自身重量且保持平衡的重物。配重块42可以包括普通砂型配重铁或特重铁等，具体可根据实际需求进行设置，本申请实施例对此不作具体限定。
在本申请的另一些实施例中，保温层3与密封件41相对的位置可以设有第一斜面结构31，密封件41与保温层3相对的位置可以设有第二斜面结构411；在升降装置6带动密封件41切换至下降状态的情况下，第一斜面结构31和第二斜面结构411可以贴合。
在本申请实施例中，保温层3与密封件41相对的位置为第一斜面结构31，密封件41与保温层3相对的位置为第二斜面结构411，这样，密封件41依靠自身重力与保温层3贴合的情况下，贴合的紧密性更好，可以进一步提高密封件41对保温层3的第二通孔32的密封效果。
具体地，第一斜面结构31和第二斜面结构411的形状适配。例如，第一斜面结构31包括多个凸起，第二斜面结构411与所述凸起相对的位置设有多个凹槽；第一斜面结构31包括多个凹槽，第二斜面结构411与所述凸起相对的位置设有多个凸起；第一斜面结构31为平面结构，第二斜面结构411也可以为平面结构。第一斜面结构31和第二斜面结构411的具体设置方式可以根据实际需求进行设置，本申请实施例对此不做具体限定。
具体地，第一斜面结构31可以为一个整体式结构，第二通孔32可以为在第一斜面结构31上开设的通孔；或者，第一斜面结构31可以为由多个拆分结构组成的结构组件，第二通孔32可以设于多个拆分结构之间，本申请实施例对此不作具体限定。
可选地，第一斜面结构31可以包括：第一子斜面结构311和第二子斜面结构312，第二通孔32可以设于第一子斜面结构311和第二子斜面结构312之间；在升降装置6带动密封件41切换至下降状态的情况下，第一子斜面结构311和第二子斜面结构312均可以与第二斜面结构贴合。
在本申请实施例中，在升降装置6带动密封件41切换至下降状态的情 况下，第一子斜面结构311和第二子斜面结构312均与第二斜面结构贴合，由于第二通孔32设于第一子斜面结构311和第二子斜面结构312之间，这样，密封件41可以密封第二通孔32，减少热量散失。
可选地，第一斜面结构31与保温层3的轴线之间的第一夹角可以为5～15°，第二斜面结构411与保温层3的轴线之间的第二夹角可以为75～85°。
在本申请实施例中，第一夹角为5～15°，第二夹角可以为75～85°，使得密封件41与保温层3的贴合效果更好。
具体地，第一夹角可以为4°、5°、10°、15°、20°等，第二夹角可以为70°、75°、80°、85°、90°等，具体可根据实际需求进行设置，本申请实施例对此不作具体限定。
具体地，第一夹角为0°，第二夹角为90°的情况下，第一斜面结构31和第二斜面结构32平行设置，使得密封件41可以直面侧堵保温层3的第二通孔32。在此情况下，可以采用挂件81分别连接升降装置和密封件41，以使挂件81带动密封件41上升或下降；也可以采用硬性挂件分别连接升降装置和密封件41，以使硬性挂件可以带动密封件41上升或下降。
在实际应用中，第一夹角为5～15°，第二夹角为75～85°，并采用挂件81悬挂密封件41，相较于密封件41直面侧堵保温层3的第二通孔32以及采用硬性挂件连接密封件41，可以降耗约20％。
可选地，加料装置2还可以包括加料阀21，加料阀21可以分别与第一通孔11和加料装置2连接；加料阀21打开，加料装置2可穿过第一通孔11和第二通孔32与坩埚5开口处相对。
在本申请实施例中，加料阀21分别与第一通孔11和加料装置2连接，在需要加料的情况下，加料阀21可以打开，加料装置2可以通过第一通孔11和第二通孔32与坩埚5开口处相对，并向坩埚5内加料；在不需要加料的情况下，加料阀21可以闭合，有效隔离加料装置2和炉体1。
具体地，加料阀21可以为电控阀或手动阀，本申请实施例对此不作具体限定。如图1所示，示出了一种手动阀。
可选地，加料装置2可以包括加料机构22和伸缩管23，加料机构22 可以与伸缩管23连接，伸缩管23可以与加料阀21连接；伸缩管23可以包括压缩状态和展开状态，伸缩管23切换至压缩状态的情况下，可带动加料机构22穿过第一通孔11和第二通孔32与坩埚5开口处相对。
在本申请实施例中，伸缩管23切换至压缩状态的情况下，伸缩管23可以带动加料机构22穿过第一通孔11和第二通孔32与坩埚5开口处相对，使得加料机构22可以将原料导入坩埚5内，使得加料较为方便快速。
具体地，伸缩管23可以为波纹管，或者，伸缩管23也可以是由多根管子套接形成的套管，具体可以根据实际需求进行设置，本申请实施例对此不作具体限定。
具体地，如图4所示，伸缩管23由展开状态切换至压缩状态，加料机构22可以由原始位置依次穿过加料阀21、第一通孔11和第三通孔71，并将原料输送至坩埚5内。如图2所示，加料完成之后，伸缩管23逐渐展开，在加料装置2退出第二通孔32的情况下，密封件41可立即下降，密封第二通孔32。如图3所示，伸缩管23由伸缩状态切换至展开状态，加料机构22可以退回原始位置，加料阀21可以闭合。
在本申请的一些可选实施例中，升降装置6可以包括：驱动机构和升降机构，驱动机构可以设于炉体1内，驱动机构可以和升降机构连接，升降机构可以与密封件41连接；驱动机构可以用于驱动升降机构上升或下降，升降机构的上升或下降可以带动密封件41在上升状态和下降状态之间切换。
在本申请实施例中，通过设置专门的驱动机构和升降机构，可以实现密封件41在上升状态和下降状态之间切换，而且可以提高密封件41的使用便捷性。
具体地，升降装置6可以靠近密封件41设置，如图1所示，升降装置6还可以设于密封件41的上方，本申请实施例对此不作具体限定。
在本申请的又一些可选实施例中，如图2所示，单晶炉可以包括换热机构9，换热机构9可以设于坩埚5的上方，升降装置6与换热机构9连接，换热机构9与密封件41连接；升降装置6用于驱动换热机构9上升或下降，换热机构9的上升或下降带动密封件41在上升状态和下降状态之间切换。
在本申请实施中，升降装置6可以驱动换热机构9上升或下降，换热机 构9的上升或下降又可以带动密封件41在上升状态和下降状态之间切换，使得换热机构9和密封件41可以共用一个升降装置6，可以节约单晶炉的布置空间和成本。
具体地，换热装置9可以为一种热屏蔽装置。
本申请实施例所提供的侧向加料的单晶炉至少包括以下优点：
在本申请实施例中，所述升降装置可以带动所述密封件切换至上升状态，使得所述加料装置可以穿过炉体侧部的第一通孔以及保温层上的第二通孔与所述坩埚开口处相对，实现单晶炉的侧向加料，可以改善高空坠落加料对热场寿命的影响。而且，所述升降装置还可以带动所述密封件切换至下降状态，使得所述密封件可以封堵和保护所述保温层上的第二通孔，提高热场寿命，降低非加料情况下的热能损失，稳定单晶炉的炉体内的温度场和气流平衡，降低断线和生长多晶的概率，提高单晶硅的拉晶效率及品质。
需要说明的是，本申请实施例并不受所描述的动作顺序的限制，因为依据本申请实施例，某些步骤可以采用其他顺序或者同时进行。其次，本领域技术人员也应该知悉，说明书中所描述的实施例均属于优选实施例，所涉及的动作并不一定是本申请实施例所必须的。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
尽管已描述了本申请实施例的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例做出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本申请实施例范围的所有变更和修改。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者终端设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物 品或者终端设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者终端设备中还存在另外的相同要素。
以上对本申请所提供的一种侧向加料的单晶炉，进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (11)

  1. 一种侧向加料的单晶炉，其中，所述单晶炉包括：炉体、加料装置以及设于所述炉体内的保温层、密封件、坩埚和升降装置，所述保温层位于所述坩埚与所述炉体之间，其中，
    所述炉体的侧部开设有第一通孔，所述保温层与所述第一通孔相对的位置开设有第二通孔；
    所述升降装置与所述密封件连接，用于带动所述密封件在上升状态和下降状态之间切换，在所述上升状态下，所述密封件上升，所述加料装置可穿过所述第一通孔和第二通孔与所述坩埚开口处相对，在所述下降状态下，所述密封件下降，所述密封件可密封所述第二通孔。
  2. 根据权利要求1所述的单晶炉，其中，所述单晶炉还包括保护筒，所述保护筒嵌设于所述第二通孔内；
    所述保护筒设有第三通孔，所述第三通孔用于穿设所述加料装置。
  3. 根据权利要求1所述的单晶炉，其中，所述单晶炉包括具有柔性特征的挂件，所述挂件的一端与所述升降装置连接，所述挂件的另一端用于悬挂所述密封件。
  4. 根据权利要求3所述的单晶炉，其中，所述单晶炉内还设有配重块，所述配重块安装于所述密封件与所述挂件连接的一端。
  5. 根据权利要求1所述的单晶炉，其中，所述保温层与所述密封件相对的位置设有第一斜面结构，所述密封件与所述保温层相对的位置设有第二斜面结构；
    在所述升降装置带动所述密封件切换至所述下降状态的情况下，所述第一斜面结构和所述第二斜面结构贴合。
  6. 根据权利要求5所述的单晶炉，其中，所述第一斜面结构包括：第一子斜面结构和第二子斜面结构，所述第二通孔设于所述第一子斜面结构和所述第二子斜面结构之间；
    在所述升降装置带动所述密封件切换至所述下降状态的情况下，所述第一子斜面结构和所述第二子斜面结构均与所述第二斜面结构贴合。
  7. 根据权利要求5所述的单晶炉，其中，所述第一斜面结构与所述保 温层的轴线之间的第一夹角为5～15°，所述第二斜面结构与所述保温层的轴线之间的第二夹角为75～85°。
  8. 根据权利要求1所述的单晶炉，其中，所述加料装置还包括加料阀，所述加料阀分别与所述第一通孔和所述加料装置连接；
    所述加料阀打开，所述加料装置可穿过所述第一通孔和第二通孔与所述坩埚开口处相对。
  9. 根据权利要求8所述的单晶炉，其中，所述加料装置包括加料机构和伸缩管，所述加料机构与所述伸缩管连接，所述伸缩管与所述加料阀连接；
    所述伸缩管包括压缩状态和展开状态，所述伸缩管切换至所述压缩状态的情况下，可带动所述加料机构穿过所述第一通孔和所述第二通孔与所述坩埚开口处相对。
  10. 根据权利要求1所述的单晶炉，其中，所述升降装置包括：驱动机构和升降机构，所述驱动机构设于所述炉体内，所述驱动机构和所述升降机构连接，所述升降机构与所述密封件连接；
    所述驱动机构用于驱动所述升降机构上升或下降，所述升降机构的上升或下降带动所述密封件在所述上升状态和所述下降状态之间切换。
  11. 根据权利要求1所述的单晶炉，其中，所述单晶炉还包括换热机构，所述换热机构设于所述坩埚的上方，所述升降装置与所述换热机构连接，所述换热机构与所述密封件连接；
    所述升降装置用于驱动所述换热机构上升或下降，所述换热机构的上升或下降带动所述密封件在所述上升状态和所述下降状态之间切换。
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