WO2023281996A1 - 粘着テープ - Google Patents

粘着テープ Download PDF

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Publication number
WO2023281996A1
WO2023281996A1 PCT/JP2022/023933 JP2022023933W WO2023281996A1 WO 2023281996 A1 WO2023281996 A1 WO 2023281996A1 JP 2022023933 W JP2022023933 W JP 2022023933W WO 2023281996 A1 WO2023281996 A1 WO 2023281996A1
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WO
WIPO (PCT)
Prior art keywords
resin
mass
die
adhesive
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/023933
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English (en)
French (fr)
Japanese (ja)
Inventor
晃良 増田
浩和 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maxell Ltd
Original Assignee
Maxell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maxell Ltd filed Critical Maxell Ltd
Priority to JP2023533485A priority Critical patent/JPWO2023281996A1/ja
Priority to KR1020247000183A priority patent/KR20240031298A/ko
Priority to CN202280047456.6A priority patent/CN117716472A/zh
Publication of WO2023281996A1 publication Critical patent/WO2023281996A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/062—Copolymers with monomers not covered by C08L33/06
    • C08L33/068—Copolymers with monomers not covered by C08L33/06 containing glycidyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C09J161/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Definitions

  • the present invention relates to a wafer processing adhesive tape used in the manufacturing process of semiconductor devices, and more particularly to an expandable wafer processing adhesive tape used to obtain a semiconductor chip with a die bond film (adhesive layer).
  • a dicing tape and a die bond film consisting of a base material and an adhesive layer (hereinafter referred to as “adhesive layer ” or “adhesive film”) may be used.
  • the dicing die-bonding film is a detachable die-bonding film (hereinafter sometimes referred to as "adhesive film” or “adhesive layer”) on the adhesive layer of the dicing tape.
  • adhesive film or “adhesive layer”
  • a semiconductor wafer is attached and placed on a die bond film of a dicing die bond film, and the semiconductor wafer is diced together with the die bond film to obtain individual semiconductor chips with an adhesive film.
  • the semiconductor chip is peeled (picked up) from the adhesive layer of the dicing tape together with the die-bonding film as a semiconductor chip with the die-bonding film, and the semiconductor chip is adhered to a lead frame, a wiring board, or another semiconductor chip through the die-bonding film. Stick to the body.
  • the dicing die-bonding film is preferably used from the viewpoint of improving productivity, but in recent years, as a method of obtaining a semiconductor chip with a die-bonding film using a dicing die-bonding film, a conventional full-cut cutting method using a dicing blade rotating at high speed has been used.
  • DBG Dynamic Glass
  • stealth dicing registered trademark
  • the DBG method of (1) above first, without completely cutting the semiconductor wafer using a dicing blade, dividing grooves of a predetermined depth are formed in the surface of the semiconductor wafer, and then the back surface is ground. By adjusting the amount as appropriate until the thickness reaches a predetermined thickness, a divided body of a semiconductor wafer containing a plurality of semiconductor chips or a thinned semiconductor wafer that can be singulated into a plurality of semiconductor chips is obtained. After that, the semiconductor wafer divided body or the semiconductor wafer that can be singulated into the semiconductor chip is attached to a dicing die bond film, and the dicing tape is expanded at a low temperature (eg, -30 ° C. or higher and 0 ° C.
  • a low temperature eg, -30 ° C. or higher and 0 ° C.
  • the die-bonding film embrittled at a low temperature is cleaved into sizes corresponding to individual semiconductor chips along the dividing grooves (hereinafter sometimes referred to as "dividing"). some), or cut together with the semiconductor wafer.
  • the expansion of the dicing tape is performed by pushing up an expansion table provided under the dicing tape.
  • the adhesive layer of the dicing tape is peeled off by pickup to obtain individual semiconductor chips with a die-bonding film.
  • a semiconductor wafer thinned to a predetermined thickness by back grinding is attached to a dicing die bond film, and the inside of the semiconductor wafer is selectively modified by irradiating a laser beam.
  • a line to be diced is formed while forming a region (modified layer).
  • the dicing tape After that, by cool-expanding the dicing tape, cracks are propagated vertically from the modified region to the semiconductor wafer, and the semiconductor wafer is individually along the planned dicing line along with the die bond film embrittled at a low temperature. Cleave.
  • the die-bonding film-attached semiconductor chips can be obtained by peeling off from the adhesive layer of the dicing tape by picking up.
  • the dicing tape is required to have sufficient stress and uniform and isotropic extensibility for cleaving the semiconductor wafer with the die-bonding film, and various proposals have been made so far.
  • Patent Document 1 there is no excessive softening in heat treatment when using a thermosetting type surface protection tape, and uniform and isotropic expandability that can be used in the expansion process for dividing the adhesive layer
  • a base film which consists of two or more layers, including a layer other than the bottom layer, which is made of a thermoplastic resin having a temperature of less than 80°C.
  • a modified region is selectively provided inside the semiconductor wafer by stealth dicing, and then the back surface is ground.
  • the semiconductor wafer can be thinned to a predetermined thickness, and a semiconductor wafer with a die-bonding film can be obtained as a divided body or a semiconductor wafer with a die-bonding film that can be separated into individual pieces.
  • SDBG Stepth Dicing Before Griding
  • a gap between adjacent individual semiconductor chips with a die-bonding film (hereinafter referred to as "kerf width A step of expanding the dicing tape at around normal temperature (hereinafter sometimes referred to as “normal temperature expansion”) is performed for the purpose of expanding the “normal temperature expansion”).
  • normal temperature expansion a step of expanding the dicing tape at around normal temperature
  • the stress applied to the dicing tape at the periphery of the expansion (expansion) table becomes greater than at the center of the expansion table. Therefore, when the expanded state is released by lowering the expansion table after normal temperature expansion, the outer peripheral portion of the dicing tape is loosened corresponding to the peripheral portion of the expansion table.
  • heat shrinking process As a means for eliminating such slackness of the dicing tape, hot air is blown onto the slackened portion of the outer peripheral portion of the dicing tape so that the surface temperature of the portion becomes about 80° C., for example, to heat the slackened portion.
  • a heat shrinking process (hereinafter sometimes referred to as a "heat shrinking process") is known in which a material is shrunk and restored to its original state. In order to carry out this step properly, the dicing tape must have high heat shrinkability at a temperature of about 80°C.
  • the region inside the outer peripheral portion of the dicing tape reaches a tension state where a predetermined degree of tension acts.
  • the gap (kerf width) between individual semiconductor chips can be fixed and held while being widened, so that individual cut semiconductor chips with a die-bonding film can be properly picked up from the adhesive layer of the dicing tape. can.
  • Japanese Patent Laid-Open No. 2002-200000 describes a semiconductor wafer fixing device that can cope with expansion of the chip interval by increasing the elongation rate, sufficiently remove the slack caused by the expansion by blowing hot air, and prevent the occurrence of storage errors when storing the cassette after picking up.
  • a layer containing an ionomer resin having a melting point of 60 to 80°C in an adhesive tape for fixing a semiconductor wafer comprising an adhesive layer on a base film for the purpose of providing an adhesive tape for semiconductor wafers. is disclosed as a semiconductor wafer-fixing adhesive tape comprising at least one layer of
  • Patent Document 3 it has uniform expandability suitable for the step of dividing the adhesive layer by expansion, exhibits sufficient shrinkability in the heat shrinking step, and causes problems due to loosening after the heat shrinking step.
  • a thermoplastic crosslinked resin that has a Vicat softening point specified by JIS K7206 of 50°C or higher and lower than 90°C and an increase in stress due to heat shrinkage of 9 MPa or higher.
  • a base film is disclosed.
  • the wafer processing tape in Patent Document 1 uses a base film having a lowermost layer made of a thermoplastic resin having a Vicat softening point of 80° C. or higher. It is said that the layers can be separated well. However, there is no description of a heat shrink process for removing the slack of the dicing tape after expansion and securing the kerf width between individual semiconductor chips, and the heat shrinkability of the tape for wafer processing. If the Vicat softening point of the thermoplastic resin used for the base film is high, for example, it cannot be said that the heat shrinkability is sufficiently high when hot air is blown so that the surface temperature of the slack portion is about 80 ° C.
  • the slack cannot be restored to its original state by the heat shrink process, and there is a risk that a sufficient kerf width between individual semiconductor chips cannot be ensured.
  • an adhesive layer with a large thickness and high fluidity such as a wire-embedded die-bonding film, which will be described later, can be cut.
  • the base film has at least one layer containing an ionomer resin having a melting point of 60 to 80 ° C. Therefore, the chip interval is expanded by increasing the elongation rate. , the slack caused by the expansion can be sufficiently removed by blowing hot air, and the occurrence of mis-storage can be prevented when the cassette is stored after the end of pick-up.
  • the above heat shrinking process for example, when hot air is blown so that the surface temperature of the slack portion is about 80° C., if the ionomer resin used for the base film has a low melting point, the resin will be excessive during heat shrinking.
  • the adhesive tape for fixing semiconductor wafers may be deformed or, in the worst case, fused.
  • this adhesive tape for fixing semiconductor wafers has stress enough to break the semiconductor wafer together with the die bond film (adhesive layer) when applied to the method of DBG or stealth dicing.
  • the wafer processing tape in Patent Document 3 uses a base film made of a thermoplastic crosslinked resin having a Vicat softening point of 50° C. or more and less than 90° C. and an increase in stress due to heat shrinkage of 9 MPa or more. Therefore, there is very little slack after the heat shrinking process, and the semiconductor chips that have been cut and the adhesive that has been separated into pieces can be stably fixed on the wafer processing tape, and good pick-up properties can be obtained. It is However, according to the studies of the present inventors, depending on the performance of the thermoplastic crosslinked resin used for the base film, for example, the heat shrinkability when hot air is blown so that the surface temperature of the slack part becomes about 80 ° C.
  • the present invention has been made in view of the problems of the prior art, and the process of dividing an adhesive layer, particularly an adhesive layer that is difficult to break represented by a wire-embedded die-bonding film, by expanding.
  • a pressure-sensitive adhesive tape for wafer processing which has suitable tensile stress, uniform expansibility, and high shrinkability capable of eliminating slackness of the tape caused during expansion in a heat shrinking process.
  • An expandable adhesive tape for wafer processing which is used when dividing an adhesive layer along a chip by expansion, comprising a base film and an adhesive layer provided on the base film. death,
  • the base film includes at least a first resin layer containing an ionomer resin at a content ratio of 80% by mass or more, and a second resin layer containing an ionomer resin that is the same as or different from the ionomer resin at a content ratio of 80% by mass or more.
  • each of the ionomer resins contains an ethylene/unsaturated carboxylic acid copolymer and zinc ions as the base polymer of the resin, and has a Vicat softening temperature defined by JIS K7206 of 50°C as the lower limit and 79°C as the lower limit. has a value within the upper bound,
  • the content ratio of structural units derived from unsaturated carboxylic acid is 100 mass based on the total amount of structural units constituting the ethylene/unsaturated carboxylic acid-based copolymer.
  • the pressure-sensitive adhesive tape for wafer processing wherein the concentration of the zinc ion is within a range of 0.38 mmol as a lower limit and 0.60 mmol as an upper limit per 1 g of the ethylene/unsaturated carboxylic acid copolymer.
  • the content ratio of structural units derived from unsaturated carboxylic acid is based on the total amount of structural units constituting the ethylene/unsaturated carboxylic acid copolymer.
  • the pressure-sensitive adhesive tape for wafer processing of form [1] which is in the range of 8.0% by mass or more and 15.0% by mass or less when 100% by mass of
  • the total thickness of the base film is in the range of 60 ⁇ m or more and 150 ⁇ m or less, and the thickness of each of the resin layers containing the ionomer resin in the base film at a content ratio of 80% by mass or more is 10 ⁇ m.
  • the total thickness of all resin layers having a range of 50 ⁇ m or less and containing the ionomer resin at a content ratio of 80% by mass or more is 65% or more of the total thickness of the base film.
  • the adhesive tape for wafer processing according to any one of [3].
  • the ethylene/unsaturated carboxylic acid copolymer is an ethylene/(meth)acrylic acid binary copolymer and an ethylene/(meth)acrylic acid/(meth)acrylic acid alkyl ester terpolymer.
  • a wafer processing pressure-sensitive adhesive tape having an adhesive layer detachably provided on the pressure-sensitive adhesive layer of the wafer processing pressure-sensitive adhesive tape of any one of modes [1] to [5].
  • the adhesive layer when the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are resin components, is set to 100 parts by mass as a reference, (a ) The glycidyl group-containing (meth)acrylic acid ester copolymer in the range of 17 parts by mass to 51 parts by mass, the epoxy resin in the range of 30 parts by mass to 64 parts by mass, and the phenol resin in the range of 19 parts by mass to 53 parts by mass.
  • the total amount of the resin component is adjusted to 100 parts by mass in the range of 100 parts by mass or less, and (b) the curing accelerator is 0.01 mass parts with respect to 100 parts by mass of the total amount of the epoxy resin and the phenol resin part or more and 0.07 part by mass or less, and (c) an inorganic filler with respect to 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin and the phenol resin
  • the tape for wafer processing has both tensile stress and uniform expandability suitable for the step of dividing the adhesive layer by expansion, and high shrinkability that can eliminate the slack of the tape that occurs during expansion in the heat shrinking step.
  • Adhesive tape can be provided. That is, the adhesive layer can be cut well, the slack of the tape generated during expansion can be removed by the heat shrinking process, and the cut semiconductor chip and the individualized adhesive layer can be used as the adhesive tape for wafer processing. It can be stably fixed while maintaining a sufficient kerf width. As a result, damage due to contact between adjacent semiconductor chips as described above and re-adhesion due to contact between adhesive layers are suppressed, and pick-up performance is improved.
  • FIG. 1 is a cross-sectional view showing an example of a two-layer structure of a substrate film of a wafer processing pressure-sensitive adhesive tape to which the present embodiment is applied;
  • FIG. 1 is a cross-sectional view showing an example of a three-layer structure of a substrate film of a wafer processing pressure-sensitive adhesive tape to which the present embodiment is applied;
  • FIG. 4 is a cross-sectional view showing an example of another aspect of the laminated structure of the base film of the pressure-sensitive adhesive tape for wafer processing to which the present embodiment is applied.
  • FIG. 1 is a cross-sectional view showing an example of the configuration of a wafer processing pressure-sensitive adhesive tape to which this embodiment is applied; 1 is a cross-sectional view showing an example of a dicing die-bonding film in which an adhesive layer (die-bonding film) is detachably provided on an adhesive tape for wafer processing (dicing tape) to which the present embodiment is applied;
  • FIG. 4 is a flow chart explaining a method for manufacturing an adhesive tape for wafer processing. 4 is a flow chart explaining a method for manufacturing a semiconductor chip;
  • FIG. 4 is a perspective view showing a state in which a ring frame (wafer ring) is attached to the outer edge of the dicing die bond film, and a semiconductor wafer processed to be singulated is attached to the center of the die bond film.
  • (a) to (f) are cross-sectional views showing an example of a step of grinding a semiconductor wafer in which a plurality of modified regions are formed by laser light irradiation and a step of bonding the semiconductor wafer to a dicing die-bonding film.
  • (a) to (f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a thin film semiconductor wafer having a plurality of modified regions bonded with a dicing die-bonding film.
  • FIG. 1 is a schematic cross-sectional view of one mode of a semiconductor device having a laminated structure using a semiconductor chip manufactured using a dicing die-bonding film to which the present embodiment is applied;
  • FIG. 11 is a schematic cross-sectional view of one mode of another semiconductor device using a semiconductor chip manufactured using a dicing die-bonding film to which the present embodiment is applied;
  • FIG. 10 is a plan view for explaining a method of measuring a gap (kerf width) between semiconductor chips after expansion;
  • 14 is an enlarged plan view of the central portion of the semiconductor wafer in FIG. 13;
  • FIG. 1 is a schematic cross-sectional view of one mode of a semiconductor device having a laminated structure using a semiconductor chip manufactured using a dicing die-bonding film to which the present embodiment is applied;
  • FIG. 11 is a schematic cross-sectional view of one mode of another semiconductor device using a semiconductor chip manufactured using a dicing die-bonding film to which the present embodiment is applied;
  • FIG. 1 are cross-sectional views showing an example of a two-layer structure of the base film 1 of the adhesive tape for wafer processing to which the present embodiment is applied.
  • the ionomer resin contained in the first resin layer and the second resin layer at a content ratio of 80% by mass or more is the same ionomer resin (Fig. 1 (a) see 1-A, 1-type 2-layer type), or the ionomer resin contained in the first resin layer and the second resin layer at a content ratio of 80% by mass or more is different. It may also be an ionomer resin (see (b) 1-B in FIG. 1, two-kind two-layer type).
  • FIG. 2 are cross-sectional views showing an example of a three-layer structure of the base film 1 of the adhesive tape for wafer processing to which the present embodiment is applied.
  • the first resin layer, the second resin layer, and the third resin layer all contain an ionomer resin at a content ratio of 80% by mass or more.
  • the same ionomer resin see (c) 1-C in FIG.
  • one type three-layer type may be used, or the ionomer contained in the first resin layer and the second resin layer at a content ratio of 80% by mass or more
  • the resin is the same ionomer resin, and the ionomer resin contained in the third resin layer at a content ratio of 80% by mass or more is a different type of ionomer resin (see (d) 1-D in FIG. 2, 2-kind 3-layer type).
  • the ionomer resins contained in the first resin layer, the second resin layer, and the third resin layer at a content ratio of 80% by mass or more are all different types of ionomer resins ((e) 1-E in FIG. 2 See, 3-kind 3-layer type).
  • the positions of the layers of the first resin layer, the second resin layer and the third resin layer are not particularly limited in the entire base film.
  • FIG. 3 are cross-sectional views showing an example of another aspect of the laminated structure of the base film 1 of the adhesive tape for wafer processing to which the present embodiment is applied.
  • the first resin layer and the second resin layer are made of a resin containing the same ionomer resin at a content ratio of 80% by mass or more.
  • the third resin layer is composed of a resin other than the resin containing the ionomer resin constituting the first resin layer and the second resin layer at a content ratio of 80% by mass or more (see (f) 1-F in FIG.
  • the first resin layer and the second resin layer are composed of resins containing different types of ionomer resins at a content ratio of 80% by mass or more
  • the third resin layer is , Constructed from other resins other than the resin containing the ionomer resin constituting the first resin layer and the second resin layer at a content ratio of 80% by mass or more (see (g) 1-G in FIG. 3, three types and three layer types) may have been
  • the positions of the layers of the first resin layer, the second resin layer and the third resin layer are not particularly limited in the entire base film.
  • the substrate film 1 of the adhesive tape for wafer processing to which the present embodiment is applied includes at least a first resin layer containing an ionomer resin at a content ratio of 80% by mass or more, and an ionomer of the same or different type as the ionomer resin. and a second resin layer containing a resin at a content ratio of 80% by mass or more.
  • a first resin layer containing an ionomer resin at a content ratio of 80% by mass or more and an ionomer of the same or different type as the ionomer resin.
  • a second resin layer containing a resin at a content ratio of 80% by mass or more it is not particularly limited as long as it does not impair the effects of the present invention.
  • the number of layers is preferably in the range of 2 to 5 layers.
  • the positions of the first resin layer and the second resin layer are not particularly limited in the entire base film.
  • FIG. 4 is a cross-sectional view showing an example of the configuration of the adhesive tape for wafer processing to which the present embodiment is applied.
  • the wafer processing pressure-sensitive adhesive tape 10 has a structure in which a pressure-sensitive adhesive layer 2 is provided on a base film 1 .
  • a typical example of such a laminated structure is a dicing tape.
  • the surface of the adhesive layer 2 of the adhesive tape 10 for wafer processing (the surface opposite to the surface facing the base film 1) is provided with a base sheet having releasability (release liner ).
  • the base film 1 includes at least a first resin layer containing an ionomer resin at a content ratio of 80% by mass or more, and a second resin layer containing an ionomer resin that is the same as or different from the ionomer resin at a content ratio of 80% by mass or more. and a laminated structure of two or more layers.
  • the adhesive for forming the adhesive layer 2 for example, an active energy ray-curable acrylic adhesive that cures and shrinks when irradiated with an active energy ray such as ultraviolet (UV) to reduce the adhesive force to the adherend.
  • An adhesive or the like is used.
  • FIG. 5 is a cross-sectional view showing an example of a configuration in which the adhesive layer 3 is detachably provided on the wafer processing pressure-sensitive adhesive tape 10 to which the present embodiment is applied.
  • the adhesive layer 3 is adhered and laminated on the adhesive layer 2 of the adhesive tape 10 for wafer processing in a detachable manner.
  • a typical example of such a laminate structure is the dicing die bond film 20 .
  • the dicing die-bonding film 20 having such a configuration is used, for example, as follows in the semiconductor manufacturing process.
  • a thin semiconductor wafer having dividing grooves formed on the surface by a blade or a thin film semiconductor wafer having a modified layer formed inside by a laser is pasted.
  • the semiconductor wafer is cut together with the die-bonding film 3 by cool expansion to obtain individual semiconductor chips with the die-bonding film 3 attached.
  • a thin semiconductor wafer is attached and held (adhered) on the die bond film 3 of the dicing die bond film 20, and in that state, a modified layer is formed inside the semiconductor wafer with a laser, and then cool expansion is performed.
  • the semiconductor wafer is cut together with the die-bonding film 3 to obtain individual semiconductor chips with the die-bonding film 3 attached.
  • a divided body of a semiconductor wafer containing a plurality of semiconductor chips is adhered and held on the die bond film 3 of the dicing die bond film 20 by transfer from a back grind tape, and then the die bond film 3 is cooled and expanded to the semiconductor chips. , to obtain individual semiconductor chips with the die-bonding film 3 attached.
  • the individual semiconductor chips with the die-bonding film 3 are separated from the adhesive layer 2 of the adhesive tape (dicing tape) 10 for wafer processing by a pick-up process. peel from.
  • the obtained semiconductor chip with the die-bonding film (adhesive film) 3 is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via the die-bonding film (adhesive film) 3 .
  • the surface of the adhesive layer 2 of the wafer processing adhesive tape (dicing tape) 10 (the surface opposite to the surface facing the base film 1) and the surface of the die bond film 3 (the adhesive layer 2) may be provided with a base sheet (release liner) having releasability.
  • the base film 1 of the adhesive tape 10 for wafer processing of the present invention includes at least a first resin layer containing a specific ionomer resin (details will be described later) at a content ratio of 80% by mass or more, and an ionomer resin that is the same as or and a second resin layer containing 80% by mass or more of a specific ionomer resin of a different kind.
  • a specific ionomer resin (details will be described later) at a content ratio of 80% by mass or more
  • an ionomer resin that is the same as or and a second resin layer containing 80% by mass or more of a specific ionomer resin of a different kind When the base film 1 has only one resin layer containing an ionomer resin, that is, when the base film 1 is composed of a single resin layer containing an ionomer resin, the thickness of the base film 1 is particularly large.
  • the resin pressure in the extruder and the motor load may become excessively large during film formation, resulting in poor film forming accuracy of the base film 1 and stable It may become difficult to form a long film.
  • the base film 1 is wound up, unnecessary wrinkles are generated, which may cause problems such as poor appearance and a decrease in pick-up yield.
  • the base film is composed of a lamination of two or more layers including at least a first resin layer containing an ionomer resin and a second resin layer, the base film 1 having a single-layer structure and the same thickness is formed.
  • the extrusion flow rate can be controlled without excessively increasing the resin pressure and motor load in the extruder, so it is suitable from the viewpoint of film formation accuracy and stable film formation, and is unnecessary for the base film 1. It does not cause wrinkles.
  • it is suitable in that the film forming speed of the base film 1 can be increased, and the balance of physical properties such as tensile stress and uniform expansibility during expansion and shrinkage in the heat shrinking process can be easily controlled.
  • containing at a content ratio of 80% by mass or more means that when the mass of the entire resin in each of the first resin layer and the second resin layer is 100% by mass as a reference, the above specific It means that the content ratio of the ionomer resin is 80% by mass or more.
  • the content ratio of the specific ionomer resin is preferably in the range of 85% by mass or more and 100% by mass or less, and more preferably in the range of 90% by mass or more and 100% by mass or less. That is, the first resin layer and the second resin layer of the base film 1 may be composed only of the specific ionomer resin.
  • the content ratio of the specific ionomer resin is less than 80% by mass, the mechanical properties expressed by the appropriate and highly crosslinked structure of the ionomer resin, that is, the tensile stress during expansion of the adhesive tape 10 for wafer processing and Uniform expansibility and shrinkage in the heat shrinkage process are insufficient, and as a result, there is a risk that the die bond film (adhesive layer) 3 will not be cut well, and a sufficient kerf width between individual semiconductor chips cannot be secured. Good pick-up property may not be obtained.
  • the number of resin layers of the base film 1 having a laminated structure of two or more layers is not particularly limited, but is in the range of two to five layers from the viewpoint of the properties and productivity of the base film 1. It is preferable that the thickness is in the range of 2 to 3 layers. Although details will be described later, the total thickness of all the resin layers containing the specific ionomer resin in the base film 1 at a content ratio of 80% by mass or more is 65% or more of the total thickness of the base film 1. is preferably It is more preferably in the range of 80% or more and 100% or less, and still more preferably in the range of 90% or more and 100% or less.
  • the third resin layer is shown in FIG.
  • the resin may contain the specific ionomer resin at a content ratio of 80% by mass or more, or may be composed of the specific ionomer resin alone.
  • the third resin layer is composed of a resin other than the resin containing the specific ionomer resin constituting the first resin layer and the second resin layer at a content ratio of 80% by mass or more as shown in FIG. may have been
  • the total thickness of all the resin layers containing the specific ionomer resin at a content ratio of 80% by mass or more is equal to the thickness of the substrate It corresponds to 100% of the total thickness of the film 1 and is particularly preferable as the present embodiment.
  • the thickness of each of the first resin layer and the second resin layer containing the specific ionomer resin at a content ratio of 80% by mass or more is is preferably 65% or more of the total thickness of the base film 1, more preferably 80% or more and 99% or less, and still more preferably 90% or more and 99% or less.
  • the ionomer resin is suitable and high
  • the mechanical properties expressed by such a crosslinked structure that is, the tensile stress and uniform expandability during expansion of the adhesive tape 10 for wafer processing, and the shrinkage properties during the heat shrinkage process become insufficient, resulting in a die bond film (adhesive There is a risk that the layer) 3 will not be cut satisfactorily, or that a sufficient kerf width between individual semiconductor chips cannot be secured, resulting in a risk that good pick-up properties cannot be obtained.
  • ⁇ Ionomer resin> A specific ionomer resin contained in the first resin layer and the second resin layer of the base film 1 of the present embodiment at a content ratio of 80% by mass or more will be described.
  • All of the above-mentioned specific ionomer resins contain an ethylene/unsaturated carboxylic acid copolymer and zinc ions as the base polymer of the resin, and the Vicat softening temperature specified by JIS K7206 has a lower limit of 50 ° C., 79 It has a value within a range with an upper limit of °C.
  • the content ratio of structural units derived from unsaturated carboxylic acid is 100 mass based on the total amount of structural units constituting the ethylene/unsaturated carboxylic acid-based copolymer.
  • the zinc ion concentration has a value within a range with a lower limit of 0.38 mmol and an upper limit of 0.60 mmol per 1 g of the ethylene/unsaturated carboxylic acid copolymer.
  • the ionomer resin used for the base film 1 by setting the content ratio of structural units derived from unsaturated carboxylic acid and the concentration of zinc ions contained in the ethylene/unsaturated carboxylic acid copolymer to the above range, although the details will be described later, zinc ions appropriately neutralize the acid groups of the ethylene/unsaturated carboxylic acid copolymer, and in the continuous layer of the ethylene/unsaturated carboxylic acid copolymer, the unsaturated carboxylic acid.
  • ion aggregates (clusters) formed by aggregates of ionic bonds of carboxylate ions of the derived acid groups and zinc ions is sufficient and appropriate, and the cross-linking morphology is optimized, making it suitable for the cool expansion process. It is possible to realize an adhesive tape for wafer processing that has both tensile stress, uniform expansibility, and high shrinkability that can eliminate slackness of the tape that occurs during expansion in the heat-shrinking process.
  • the ethylene/unsaturated carboxylic acid-based copolymer is at least a two-component copolymer obtained by copolymerizing ethylene and an unsaturated carboxylic acid, and is further copolymerized with other copolymer components such as the third and fourth copolymers. It may be a ternary or higher multi-dimensional copolymer.
  • the ethylene/unsaturated carboxylic acid copolymer may be used alone, or two or more ethylene/unsaturated carboxylic acid copolymers may be used in combination.
  • Examples of the unsaturated carboxylic acid constituting the ethylene/unsaturated carboxylic acid binary copolymer include acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid, maleic acid, and anhydride.
  • Unsaturated carboxylic acids having 4 to 8 carbon atoms such as maleic acid and the like are included. Among these, acrylic acid or methacrylic acid is preferable as the unsaturated carboxylic acid.
  • the second Other copolymer components such as third, fourth and the like may also be included.
  • Other copolymerization components such as third and fourth include unsaturated carboxylic acid esters, unsaturated hydrocarbons, vinyl esters, oxides such as vinyl sulfuric acid and vinyl nitric acid, halogen compounds, and vinyl group-containing primary and secondary amines. compounds, carbon monoxide, sulfur dioxide, and the like. Among these, unsaturated carboxylic acids and unsaturated hydrocarbons are preferred as other copolymerization components.
  • the unsaturated carboxylic acid ester is preferably an unsaturated carboxylic acid alkyl ester, and the number of carbon atoms in the alkyl moiety of the alkyl ester is preferably 1 or more and 12 or less, more preferably 1 or more and 8 or less, and 1 or more and 4 or less. is more preferred.
  • alkyl moieties include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, 2-ethylhexyl, isooctyl, and the like.
  • unsaturated carboxylic acid alkyl ester examples include unsaturated carboxylic acid alkyl esters in which the number of carbon atoms in the alkyl moiety ranges from 1 to 12 (e.g., methyl acrylate, ethyl acrylate, isobutyl acrylate, acrylic acid n acrylic acid alkyl esters such as -butyl and isooctyl acrylate; methacrylic acid alkyl esters such as methyl methacrylate, ethyl methacrylate and isobutyl methacrylate; and maleic acid alkyl esters such as dimethyl maleate and diethyl maleate).
  • unsaturated carboxylic acid alkyl esters in which the number of carbon atoms in the alkyl moiety ranges from 1 to 12 (e.g., methyl acrylate, ethyl acrylate, isobutyl acrylate, acrylic acid n acrylic acid alkyl esters such as -butyl
  • (meth)acrylic acid alkyl esters in which the number of carbon atoms in the alkyl moiety ranges from 1 to 4 are more preferable.
  • Isobutyl methacrylate, in which the alkyl moiety has 4 carbon atoms, is particularly preferred from the viewpoint of uniform expandability including control of the Vicat softening temperature and suppression of the necking phenomenon during expansion of the adhesive tape 10 for wafer processing.
  • Examples of the unsaturated hydrocarbons include propylene, butene, 1,3-butadiene, pentene, 1,3-pentadiene, and 1-hexene.
  • Examples of the vinyl ester include vinyl acetate and vinyl propionate, and examples of the halogen compound include vinyl chloride and vinyl fluoride.
  • the form of the ethylene/unsaturated carboxylic acid-based copolymer may be a block copolymer, a random copolymer, or a graft copolymer. Any combination is acceptable. Among them, a binary random copolymer, a ternary random copolymer, a graft copolymer of a binary random copolymer, or a graft copolymer of a ternary random copolymer is preferable in terms of industrial availability. , a binary random copolymer or a ternary random copolymer are more preferable, and a ternary random copolymer is more preferable from the viewpoint of uniform expandability when the pressure-sensitive adhesive tape 10 for wafer processing is expanded.
  • ethylene/unsaturated carboxylic acid copolymer examples include ethylene/(meth)acrylic acid binary copolymers such as ethylene/acrylic acid copolymers and ethylene/methacrylic acid copolymers, Examples include terpolymers of ethylene/(meth)acrylic acid/(meth)acrylic acid alkyl ester such as ethylene/methacrylic acid/isobutyl acrylate copolymer. From the viewpoint of expandability, a terpolymer of ethylene/(meth)acrylic acid/(meth)acrylic acid alkyl ester such as ethylene/methacrylic acid/isobutyl acrylate copolymer is preferable.
  • commercial products marketed as ethylene/unsaturated carboxylic acid copolymers may be used, for example, Nucrel (registered trademark) series manufactured by DuPont Mitsui Polychemicals, etc. may be used.
  • the content ratio of structural units derived from unsaturated carboxylic acid is 100 mass based on the total amount of structural units constituting the ethylene/unsaturated carboxylic acid-based copolymer. %, it has a value within a range with a lower limit of 6.9% by mass and an upper limit of 18.0% by mass.
  • the lower limit of the content ratio of the structural unit derived from the unsaturated carboxylic acid is preferably 8.0% by mass, more preferably 10.0% by mass.
  • the upper limit is preferably 15.0% by mass, more preferably 12.0% by mass.
  • the acid group (carboxyl group) possessed by the ethylene/unsaturated carboxylic acid copolymer is converted into zinc ions at an arbitrary ratio.
  • the die-bonding film (adhesive layer) 3 may not be cut well, or a sufficient kerf width between individual semiconductor chips may not be ensured, resulting in poor pick-up performance.
  • the Vicat softening temperature may become too high.
  • the content ratio of the structural unit derived from the unsaturated carboxylic acid exceeds 18.0% by mass, the mechanical properties of the base film 1 may become insufficient.
  • the Vicat softening temperature which will be described later, may become too low.
  • the ethylene/unsaturated carboxylic acid copolymer is an unsaturated carboxylic acid ester when the total amount of the structural units constituting the ethylene/unsaturated carboxylic acid copolymer is 100% by mass of the reference. It is preferable that the content ratio of the derived structural unit has a value within a range with a lower limit of 0% by mass and an upper limit of 16.0% by mass. From the viewpoint of uniform expandability including suppression of the necking phenomenon during expansion of the adhesive tape for wafer processing 10, the lower limit of the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is more preferably 1.5% by mass. Preferably, 5.0% by mass is more preferable.
  • the upper limit is more preferably 15.0% by mass, still more preferably 12.0% by mass. If the content ratio of the constituent units derived from the unsaturated carboxylic acid ester exceeds 16.0% by mass, the Vicat softening temperature, which will be described later, may become too low depending on the content ratio of the unsaturated carboxylic acid. In addition, blocking or fusion may occur in the base film 1 .
  • the preferred copolymerization ratio is that the ethylene/unsaturated carboxylic acid-based copolymer is When the total amount of the constituting structural units is 100% by mass of the reference, the content ratio of the structural units derived from ethylene is in the range of 82.0% by mass or more and 93.1% by mass or less, and is derived from an unsaturated carboxylic acid The content ratio of the structural units is in the range of 6.9% by mass or more and 18.0% by mass or less.
  • the content ratio of structural units derived from ethylene is in the range of 85.0% by mass or more and 92.0% by mass or less, and the content ratio of structural units derived from unsaturated carboxylic acid is 8.0% by mass or more. The range is 15.0% by mass or less.
  • the preferred copolymerization ratio is the ethylene/unsaturated carboxylic acid
  • the content ratio of the structural units derived from ethylene is in the range of 66.0% by mass to 91.6% by mass
  • unsaturated is in the range of 6.9% by mass or more and 18.0% by mass or less
  • the content ratio of structural units derived from unsaturated carboxylic acid ester is in the range of 1.5% by mass or more.16.
  • the range is 0% by mass or less, and the total amount is adjusted to 100% by mass. More preferably, the content ratio of structural units derived from ethylene is in the range of 70.0% by mass or more and 87.0% by mass or less, and the content ratio of structural units derived from unsaturated carboxylic acid is 8.0% by mass or more. It is in the range of 15.0% by mass or less, and the content ratio of the structural unit derived from the unsaturated carboxylic acid ester is in the range of 5.0% by mass or more and 15.0% by mass or less.
  • Ionomer resins are usually composed of lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, and magnesium ions. Although it is neutralized at an arbitrary ratio with metal ions such as ions and manganese ions, the specific ionomer resin applied to the base film 1 of the present embodiment has a stabilization of the crosslinked structure (strong crosslinked From the viewpoint of bonding), the acid groups contained in the ethylene/unsaturated carboxylic acid copolymer that is the base polymer of the resin and the zinc ion are contained in the ethylene/unsaturated carboxylic acid copolymer that is the base polymer of the resin. At least part of is neutralized with zinc ions, which are divalent metal ions.
  • Examples of the zinc ion supply source include zinc oxides, hydroxides, carbonates, bicarbonates, acetates, formates, and organic acid salts. Specific examples include zinc oxide, zinc hydroxide, zinc acetate, zinc stearate, and basic zinc carbonate. Among these, zinc oxide and zinc stearate are preferred. These zinc ion sources may be used singly or in combination of two or more.
  • the content ratio of structural units derived from unsaturated carboxylic acid which is the base polymer of the resin, is within a range with a lower limit of 6.9% by mass and an upper limit of 18.0% by mass.
  • a source of zinc ions is added to the ethylene/unsaturated carboxylic acid copolymer adjusted to be an arbitrary ratio of acid groups (carboxyl groups) possessed by the copolymer by zinc ions. It is obtained by neutralizing (crosslinking) with.
  • any ionomer resin may not be used.
  • the concentration of the zinc ions in the ethylene/unsaturated carboxylic acid-based copolymer in which the content ratio of the constituent units is specified is extremely important. That is, in the specific ionomer resin applied to the base film 1 of the present embodiment, the concentration of the zinc ion is 0.38 mmol per 1 g of the ethylene/unsaturated carboxylic acid copolymer as a lower limit, and 0 The value is adjusted so as to be within a range with an upper limit of 0.60 mmol.
  • the lower limit of the zinc ion concentration is preferably 0.41 mmol, more preferably 0.46 mmol.
  • the upper limit is preferably 0.55 mmol, more preferably 0.52 mmol.
  • the zinc ion concentration is less than 0.38 mmol, the cross-linking effect of the ethylene/unsaturated carboxylic acid copolymer by zinc ions is small, and the continuous layer of the ethylene/unsaturated carboxylic acid copolymer is unsaturated. Since the development of ion aggregates (clusters) formed by aggregates of ionic bonds of carboxylate ions of acid groups derived from carboxylic acid and zinc ions is also insufficient, uniform expansion of the adhesive tape 10 for wafer processing during expansion. As a result, a sufficient kerf width between individual semiconductor chips cannot be ensured, and good pick-up performance may not be obtained.
  • the melt viscosity of the resin may be high depending on the content ratio of the unsaturated carboxylic acid in the ethylene/unsaturated carboxylic acid copolymer, which is the base polymer of the specific ionomer resin. If it becomes too high, the resin pressure in the extruder increases and the motor load increases, which may make it difficult to form a film stably.
  • the concentration of the zinc ion is within the above range, in the continuous layer of the ethylene/unsaturated carboxylic acid-based copolymer, an aggregation of ionic bonds between the carboxylate ion of the acid group derived from the unsaturated carboxylic acid and the zinc ion Since the formed ionic aggregates (clusters) develop sufficiently and appropriately, the cross-linking effect makes the ionic aggregates (clusters) less likely to be destroyed even when the base film 1 is expanded, and the ionic aggregates (clusters) are formed together with the expansion. The number of tensions in the molecular chains between them increases and moderate tensile stress develops.
  • the entropic elasticity works strongly, and the stretched and oriented molecules easily return to their original state. That is, the tensile stress during stretching of the base film 1 and the restoring force during heating against the strain after stretching are sufficient, and the adhesive tape for wafer processing 10 has an appropriate tensile stress and uniform expansibility during expansion, and a heating effect. It is possible to achieve both shrinkability in the shrinking process. As a result, the adhesive layer 3 can be broken well, a sufficient kerf width between individual semiconductor chips can be secured, and a good pick-up property can be obtained.
  • the above-mentioned specific ionomer resin has a Vicat softening temperature defined by JIS K7206 within a range with a lower limit of 50°C and an upper limit of 79°C.
  • the lower limit of the Vicat softening temperature is preferably 54°C, more preferably 57°C.
  • the upper limit is preferably 74°C, more preferably 64°C. If the specific ionomer resin has a Vicat softening temperature of less than 50°C, blocking may occur during film formation or pressure-sensitive adhesive tape production.
  • the resin in the heat shrinking process, for example, if hot air is blown so that the surface temperature of the slack part becomes about 80 ° C., the resin will be excessively softened and fluidized during heat shrinking, so the adhesive for wafer processing There is a risk that the tape 10 will be deformed or fused more than necessary.
  • the Vicat softening temperature of the specific ionomer resin is 80°C or higher, the heat shrinkability becomes insufficient when hot air is blown so that the surface temperature of the slack portion becomes about 80°C, for example. A sufficient kerf width between individual semiconductor chips cannot be ensured, and there is a risk that good pick-up properties cannot be obtained.
  • the step of dividing the adhesive layer by expanding is performed. It is possible to achieve both suitable tensile stress and uniform expansibility, as well as high shrinkability (resilience) suitable for the process of eliminating and removing the slackness of the tape generated during expansion (heat shrinkage process).
  • the specific ionomer resin contained in the first resin layer and the second resin layer of the base film 1 at a content ratio of 80% by mass or more has been described. and a laminated structure of three or more layers having other resin layers having the same structure as the first resin layer and the second resin layer in addition to the second resin layer (for example, the embodiment shown in FIG. 2), of course
  • the ionomer resin contained in the other resin layer at a content ratio of 80% by mass or more the specific ionomer resin described above can be used.
  • the first resin layer and the second resin layer that the base film 1 has are within the range that does not hinder the effects of the present invention, that is, the mass of the entire resin in the first resin layer and the second resin layer is 100 based on each standard. In terms of % by mass, other resins than the specific ionomer resin can be contained at a content rate of 20% by mass or less. Also, when the third, fourth, etc. resin layers laminated on the first resin layer and the second resin layer contain the specific ionomer resin at a content ratio of 80% by mass or more, the specific ionomer resin A resin other than the ionomer resin can be contained at a content rate of 20% by mass or less.
  • the other resin layer contains 80% of the specific ionomer resin constituting the first resin layer and the second resin layer. It can also be composed of other resins other than the resins contained at a content ratio of mass % or more.
  • thermoplastic resins are not particularly limited, but thermoplastic resins are preferable.
  • the thermoplastic resin include ionomer resins other than the specific ionomer resins, thermoplastic olefin copolymers, thermoplastic polyurethanes, thermoplastic polyamides, thermoplastic styrene resins, thermoplastic polyesters, and thermoplastic acrylic resins.
  • thermoplastic resins include thermoplastic olefin copolymers such as ethylene/propylene copolymer elastomers and ethylene/1-butene copolymer elastomers, and thermal resins such as nylon 6 and nylon 6/12.
  • Plastic polyamides and thermoplastic polyether/polyolefin copolymers are preferable, and thermoplastic polyamides are more preferable from the viewpoint of the splitting property of the adhesive layer 3 .
  • thermoplastic resins may be used singly or in combination of two or more.
  • the Vicat softening temperature of the other resin is is not particularly limited, but is preferably selected appropriately so that the Vicat softening temperature of the mixed resin is in the range of 50°C or higher and lower than 80°C.
  • the other resin layer laminated on the first resin layer and the second resin layer is composed of a resin other than the resin containing the above-mentioned specific ionomer resin at a content ratio of 80% by mass or more
  • the other resin The Vicat softening temperature is preferably in the range of 50°C or more and less than 80°C.
  • the resin used for each resin layer constituting the substrate film 1 of the present embodiment may contain other components other than the resin of the present embodiment within a range that does not impair the effects of the present invention. .
  • Other components are not particularly limited. Dyes, pigments, lubricants, impact modifiers, metal deactivators, flame retardants, flame retardant aids, slip agents, reinforcing agents, release agents, and the like. Other components may be used singly or in combination of two or more. The content of these other components is not particularly limited, but should be within a range in which the base film 1 exhibits desired functions and does not lose its expandability and heat-shrinkability.
  • the total thickness of the substrate film 1 of the present embodiment is not particularly limited, the lower limit thereof is preferably 60 ⁇ m, more preferably 70 ⁇ m. On the other hand, its upper limit is preferably 150 ⁇ m, more preferably 120 ⁇ m. If the total thickness of the base film 1 is less than 60 ⁇ m, the strength may be insufficient for holding the ring frame during dicing, for example. On the other hand, if the total thickness of the base film 1 exceeds 150 ⁇ m, for example, expandability may be poor. Further, when the substrate film 1 or the adhesive tape for wafer processing 10 is wound into a long roll, there is a possibility that a stepped mark may be formed on the winding core.
  • each of the resin layers containing the specific ionomer resin in the base film 1 at a content ratio of 80% by mass or more is not particularly limited, but the lower limit thereof is preferably 10 ⁇ m, more preferably 20 ⁇ m. preferable.
  • the upper limit thereof is preferably 50 ⁇ m, more preferably 40 ⁇ m.
  • the total thickness of all the resin layers containing the specific ionomer resin at a content ratio of 80% by mass or more is not particularly limited, but the lower limit is 65% of the total thickness of the base film 1. is preferred, 80% is more preferred, 90% is even more preferred, and the upper limit is 100%.
  • the base film 1 adjusted in this way, since the mechanical properties expressed by the appropriate and highly crosslinked structure of the specific ionomer resin are sufficiently reflected, the tensile stress when the base film 1 is stretched , uniform expansibility and sufficient restoring force upon heating against strain after stretching. As a result, the die-bonding film (adhesive layer) 3 is cut well, and the kerf width between the individual semiconductor chips is sufficiently secured, so good pick-up property is obtained.
  • each resin layer containing the specific ionomer resin in the base film 1 at a content ratio of 80% by mass or more has a thickness of 10 ⁇ m or more and 50 ⁇ m or less. It is preferable to laminate and manufacture the base film 1 so that the total thickness of the base film 1 is in the range of 60 ⁇ m to 150 ⁇ m. Compared to film production, the extrusion flow rate can be controlled without excessively increasing the resin pressure and motor load in the extruder, which is preferable from the viewpoint of film formation accuracy and stable film formation.
  • the total thickness of the other resin layers is the total thickness of the base film 1. It is preferable to adjust the thickness appropriately so that the thickness is in the range of 60 ⁇ m or more and 150 ⁇ m or less. It is preferable to adjust the total thickness of the other resin layers, for example, within a range of 0.6 ⁇ m or more and 52 ⁇ m or less.
  • the method for producing the substrate film 1 of the present embodiment is not particularly limited, but for example, the resin composition for forming the first resin layer and the resin composition for forming the second resin layer are mixed.
  • a T-die coextrusion method or an inflation coextrusion method can be used in which the resin compositions are supplied to separate extruders, melted, and extruded from a single die.
  • separate extruders corresponding to the number of layers may be used.
  • a method of extrusion laminating a second resin layer on a preformed first resin layer a method of extrusion laminating a second resin layer between two preformed first resin layers, or the like can also be used.
  • the T-die co-extrusion method is preferable from the viewpoint of uniform extensibility of the base film 1 and production efficiency.
  • the resin tends to be oriented, so there is a possibility that the uniform extensibility may be lowered.
  • the extrusion lamination method requires one layer to be formed into a film in advance, the production efficiency is poor.
  • the T-die co-extrusion method it is desirable to employ a T-die co-extrusion-nip roll forming method using a nip roll having fine unevenness on the surface.
  • the resin composition is extruded from a T-die and sandwiched between a cooling roll and a nip roll having fine irregularities (nip roll molding), for example, the specific ionomer resin having a low Vicat softening point is used as the outermost layer of the base film 1. Even if the resin layer containing In addition, it is possible to secure the anti-blocking property of the base film 1 after film formation and the roll-shaped raw material of the pressure-sensitive adhesive tape for wafer processing after processing.
  • the adhesive tape 10 for wafer processing of the present invention has a configuration in which an adhesive layer 2 for holding (temporarily fixing) a semiconductor wafer is provided on one surface of the base film 1 described above. Further, the surface of the adhesive layer 2 of the adhesive tape 10 for wafer processing (the surface opposite to the surface facing the base film 1) is provided with a base sheet (release liner) having releasability. good too.
  • the adhesive for forming the adhesive layer 2 for example, conventionally known adhesive compositions such as acrylic, silicone, polyester, polyvinyl acetate, polyurethane, and rubber can be used.
  • active energy ray-curable acrylics that cure and shrink when irradiated with active energy rays such as ultraviolet rays (UV) reduce the adhesive force to the adherend.
  • active energy rays such as ultraviolet rays (UV)
  • a pressure-sensitive adhesive composition is preferably used.
  • active energy ray-curable acrylic pressure-sensitive adhesive composition typically, an acrylic pressure-sensitive adhesive polymer having a photosensitive carbon-carbon double bond and a functional group (hereinafter referred to as "active energy ray-curable acrylic Sometimes referred to as "adhesive polymer"), a photopolymerization initiator, and an adhesive composition (A) comprising a cross-linking agent that reacts with the functional group, or an acrylic adhesive polymer having a functional group, An active energy ray-curable compound, a photopolymerization initiator, and a pressure-sensitive adhesive composition (B) comprising a cross-linking agent that reacts with the functional group are included, but are not particularly limited thereto.
  • active energy ray-curable acrylic pressure-sensitive adhesive composition typically, an acrylic pressure-sensitive adhesive polymer having a photosensitive carbon-carbon double bond and a functional group (hereinafter referred to as "adhesive polymer”), a photopolymerization initiator, and an adhesive composition (A) comprising a cross
  • the active energy ray-curable acrylic adhesive polymer of the former embodiment, the photopolymerization initiator, and the A pressure-sensitive adhesive composition (A) comprising a cross-linking agent that reacts with functional groups is preferred.
  • the term "functional group” as used herein refers to a thermally reactive functional group that can coexist with a carbon-carbon double bond. Examples of such functional groups are functional groups that thermally react with active hydrogen groups such as hydroxyl groups, carboxyl groups and amino groups, and active hydrogen groups such as glycidyl groups.
  • An active hydrogen group refers to a functional group having an element other than carbon, such as nitrogen, oxygen or sulfur, and hydrogen directly bonded thereto.
  • the adhesive composition (A) contains a photosensitive carbon-carbon double bond and an acrylic adhesive polymer having a functional group, a photopolymerization initiator, and a cross-linking agent that reacts with the functional group.
  • an acrylic pressure-sensitive adhesive polymer having a carbon-carbon double bond and a functional group in the pressure-sensitive adhesive composition (A) one having a carbon-carbon double bond introduced into the molecular side chain is used.
  • the method for producing an acrylic adhesive polymer having a carbon-carbon double bond and a functional group is not particularly limited, but usually a (meth)acrylic acid ester and a functional group-containing unsaturated compound are used together.
  • a method of obtaining a copolymer by polymerization and subjecting the functional group of the copolymer to addition reaction with a functional group capable of addition reaction and a compound having a carbon-carbon double bond can be mentioned.
  • the copolymer (hereinafter sometimes referred to as "copolymer having a functional group”) before the addition reaction of the compound having the functional group and the carbon-carbon double bond includes: Examples thereof include copolymers containing (meth)acrylic acid alkyl ester monomers and active hydrogen group-containing monomers and/or glycidyl group-containing monomers.
  • Examples of the (meth)acrylic acid alkyl ester monomers include hexyl (meth)acrylate having 6 to 18 carbon atoms, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl ( meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, pentadecyl (meth) Acrylate, hexadecyl (meth) acrylate, heptadecyl (meth) acrylate, octadecyl (meth) acrylate, or penty
  • Examples of the active hydrogen group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, and the like.
  • hydroxyl group-containing monomers carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride; monomer, (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N-methoxymethyl(meth) Amide-based monomers such as acrylamide and N-butoxymethyl (meth)acrylamide; amino ethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, t-butylaminoethyl (meth)acrylate group-containing monomers, and the like.
  • active hydrogen group-containing monomer components may be used alone or
  • the content of the thermally reactive functional group is not particularly limited, it is preferably in the range of 0.5% by mass or more and 50% by mass or less based on the total amount of the copolymerizable monomer components.
  • suitable functional group-containing copolymers obtained by copolymerizing the above monomers include a binary copolymer of 2-ethylhexyl acrylate and acrylic acid, and a copolymer of 2-ethylhexyl acrylate and acrylic acid.
  • Examples include, but are not limited to, tetrapolymers of -ethylhexyl, methyl methacrylate, 2-hydroxye
  • the above functional group-containing copolymer may contain other comonomer components as necessary.
  • specific examples of such other copolymerizable monomer components include cyano group-containing monomers such as (meth)acrylonitrile, olefinic monomers such as ethylene, propylene, isoprene, butadiene and isobutylene.
  • styrene ⁇ -methylstyrene, vinyl toluene and other styrene monomers, vinyl acetate, vinyl propionate and other vinyl ester monomers, methyl vinyl ether, ethyl vinyl ether and other vinyl ether monomers, vinyl chloride, chloride Halogen atom-containing monomers such as vinylidene, alkoxy group-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate, N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N- vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, N-( Examples include mono
  • the acrylic adhesive polymer having the functional group preferably has a glass transition temperature (Tg) in the range of -70°C or higher and 15°C or lower, more preferably in the range of -60°C or higher and -10°C or lower. .
  • Tg glass transition temperature
  • the above-mentioned acrylic adhesive polymer having a carbon-carbon double bond and a functional group uses the above-mentioned copolymer having a functional group, and a functional group capable of undergoing an addition reaction with the functional group possessed by the copolymer. It can be obtained by an addition reaction of a compound having a group and a carbon-carbon double bond.
  • Examples of such compounds having a functional group and a carbon-carbon double bond include 2-methacryloyloxyethyl isocyanate, 4 Isocyanate compounds having a (meth)acryloyloxy group such as -methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate can be used. Further, when the addition reaction is performed on the carboxyl group in the side chain of the copolymer, glycidyl (meth)acrylate, 2-(1-aziridinyl)ethyl (meth)acrylate, etc. are used as the compound. be able to. Furthermore, (meth)acrylic acid or the like can be used as the compound when the addition reaction is performed on the glycidyl group in the side chain of the copolymer.
  • an isocyanate group and a carbon As the addition reaction, from the viewpoint of ease of reaction tracking (stability of control) and technical difficulty, an isocyanate group and a carbon
  • the most preferred method is a method of subjecting a compound having a -carbon double bond (an isocyanate compound having a (meth)acryloyloxy group) to an addition reaction.
  • the active energy ray-curable acrylic adhesive polymer is crosslinked with a crosslinking agent such as a polyisocyanate crosslinking agent or an epoxy crosslinking agent, which will be described later, to further increase the molecular weight. It is preferable that a functional group such as a hydroxyl group, a carboxyl group or a glycidyl group is left in the base.
  • the hydroxyl group (—OH) in the side chain of the copolymer (meth) may be adjusted so that the isocyanate group (--NCO) equivalent ratio [(NCO)/(OH)] of the isocyanate compound having an acryloyloxy group is less than 1.0.
  • an acrylic pressure-sensitive adhesive polymer having a carbon-carbon double bond such as a (meth)acryloyloxy group and a functional group, that is, an active energy ray-curable acrylic pressure-sensitive adhesive polymer can be obtained.
  • a polymerization inhibitor so that the active energy ray reactivity of the carbon-carbon double bond is maintained.
  • a quinone-based polymerization inhibitor such as hydroquinone monomethyl ether is preferable.
  • the amount of the polymerization inhibitor is not particularly limited, it is usually in the range of 0.01 part by mass or more and 0.1 part by mass or less with respect to the total amount of the copolymer having a functional group and the active energy ray-reactive compound. Preferably.
  • the active energy ray-curable acrylic adhesive polymer preferably has a weight average molecular weight Mw in the range of 100,000 to 2,000,000.
  • Mw weight average molecular weight
  • a high-viscosity active energy ray curing agent of several thousand cP or more and tens of thousands of cP or less is used. It is difficult to obtain a solution of the flexible resin composition, which is not preferable.
  • the cohesive force of the adhesive layer 2 before the irradiation of the active energy ray becomes small, for example, when the semiconductor chip with the die bonding film 3 is detached from the adhesive layer 2 after the irradiation with the active energy ray, the semiconductor wafer with the die bonding film 3 may contaminate the
  • the weight-average molecular weight Mw exceeds 2,000,000, there is no particular problem in terms of properties as an adhesive, but it is difficult to mass-produce the active energy ray-curable acrylic adhesive polymer.
  • the active energy ray-curable acrylic adhesive polymer may gel during synthesis, which is not preferable.
  • the weight average molecular weight Mw of the active energy ray-curable acrylic adhesive polymer is more preferably 300,000 or more and 1,500,000 or less.
  • the weight average molecular weight Mw means a standard polystyrene conversion value measured by gel permeation chromatography.
  • the carbon-carbon double bond content of the acrylic adhesive polymer having a carbon-carbon double bond and a functional group is an amount that can obtain a sufficient adhesive force reduction effect in the adhesive layer 2 after irradiation with an active energy ray.
  • the carbon-carbon double bond content is, for example, 0.85 meq/g or more and 1.60 meq/g or less. A range is preferred.
  • the carbon-carbon double bond content is less than 0.85 meq/g, the effect of reducing the adhesive strength of the adhesive layer 2 after irradiation with active energy rays is reduced, and pick-up failures of the semiconductor chip with the adhesive layer 3 increase.
  • the active energy ray-curable acrylic pressure-sensitive adhesive composition contains a photopolymerization initiator that generates radicals upon exposure to active energy rays.
  • the photopolymerization initiator receives the irradiation of the active energy ray to the adhesive layer at the time of detachment of the adherend, generates radicals, and the carbon that the active energy ray-curable acrylic adhesive polymer in the adhesive layer 2 has - initiates the cross-linking reaction of carbon double bonds.
  • the pressure-sensitive adhesive layer further hardens and shrinks under the irradiation of active energy rays, thereby reducing the adhesive force to the adherend.
  • photopolymerization initiator compounds that generate radical active species by ultraviolet rays or the like are preferable, and examples thereof include alkylphenone radical polymerization initiators, acylphosphine oxide radical polymerization initiators, oxime ester radical polymerization initiators, and the like. be done. These photopolymerization initiators may be used alone or in combination of two or more.
  • alkylphenone-based radical polymerization initiators examples include benzylmethylketal-based radical polymerization initiators, ⁇ -hydroxyalkylphenone-based radical polymerization initiators, ⁇ -aminoalkylphenone-based radical polymerization initiators, and the like.
  • benzyl methyl ketal-based radical polymerization initiator examples include, for example, 2,2'-dimethoxy-1,2-diphenylethan-1-one (eg, trade name: Omnirad 651, IGM Resins B.V. company) and the like.
  • ⁇ -hydroxyalkylphenone-based radical polymerization initiator examples include, for example, 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad 1173, IGM Resins B.V.
  • ⁇ -aminoalkylphenone-based radical polymerization initiator examples include, for example, 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad 907, IGM Resins B.V.), 2-benzyl-2-(dimethylamino)-4'-morpholinobtyrophenone (trade name: Omnirad 369, manufactured by IGM Resins B.V.), 2-dimethylamino-2-( 4-methylbenzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one (trade name: Omnirad 379EG, manufactured by IGM Resins B.V.) and the like.
  • acylphosphine oxide-based radical polymerization initiator examples include, for example, 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name: OmniradTPO, manufactured by IGM Resins B.V.), bis (2,4,6-trimethylbenzoyl)-phenylphosphine oxide (trade name: Omnirad 819, manufactured by IGM Resins B.V.) and the like.
  • oxime ester-based radical polymerization initiator examples include 1,2-octanedione, 1-[4-(phenylthio)phenyl]-,2-(O-benzoyloxime) (trade name: Omnirad OXE-01, IGM Resins B.V.). V. Co.) and the like.
  • the amount of the photopolymerization initiator added is in the range of 0.1 parts by mass or more and 10.0 parts by mass or less with respect to 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. preferable. If the amount of the photopolymerization initiator added is less than 0.1 parts by mass, the photo-radical crosslinking reaction of the acrylic adhesive polymer is not sufficient even if the active energy ray is irradiated because the photoreactivity with respect to the active energy ray is insufficient.
  • the curing and shrinkage of the adhesive become insufficient, and as a result, the effect of reducing the adhesive force in the adhesive layer 2 after irradiation with active energy rays is reduced, and there is a risk that pickup defects of semiconductor chips may increase.
  • the amount of the photopolymerization initiator added exceeds 10.0 parts by mass, the effect is saturated, which is not preferable from the viewpoint of economy.
  • the pressure-sensitive adhesive layer 2 may turn yellow and have a poor appearance.
  • compounds such as dimethylaminoethyl methacrylate and isoamyl 4-dimethylaminobenzoate may be added to the adhesive as sensitizers for such photopolymerization initiators.
  • the active energy ray-curable acrylic pressure-sensitive adhesive composition (adhesive composition (A)) further contains a cross-linking agent for increasing the molecular weight of the active energy ray-curable acrylic pressure-sensitive adhesive polymer. do.
  • a cross-linking agent is not particularly limited, and is a known cross-linking agent having a functional group capable of reacting with a hydroxyl group, a carboxyl group, a glycidyl group, or the like, which is a functional group possessed by the active energy ray-curable acrylic adhesive polymer. agent can be used.
  • polyisocyanate-based cross-linking agents examples include polymer-based cross-linking agents.
  • polyisocyanate-based cross-linking agent or an epoxy-based cross-linking agent from the viewpoint of reactivity and versatility.
  • cross-linking agents may be used alone or in combination of two or more.
  • the amount of the cross-linking agent to be blended is preferably in the range of 0.01 parts by mass or more and 15 parts by mass or less with respect to 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer.
  • polyisocyanate-based cross-linking agent examples include polyisocyanate compounds having an isocyanurate ring, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and hexamethylene diisocyanate, and adducts obtained by reacting trimethylolpropane and tolylene diisocyanate.
  • examples include polyisocyanate compounds, adduct polyisocyanate compounds obtained by reacting trimethylolpropane and xylylene diisocyanate, and adduct polyisocyanate compounds obtained by reacting trimethylolpropane and isophorone diisocyanate. These can be used singly or in combination of two or more.
  • epoxy-based cross-linking agent examples include bisphenol A/epichlorohydrin type epoxy resin, ethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, glycerin diglycidyl ether, glycerin triglycidyl ether, 1,6-hexanediol diglycidyl ether.
  • trimethylolpropane triglycidyl ether trimethylolpropane triglycidyl ether, sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidylerythritol, diglycerol polyglycidyl ether, 1,3′-bis(N,N-diglycidylaminomethyl)cyclohexane, N , N,N',N'-tetraglycidyl-m-xylenediamine and the like. These can be used singly or in combination of two or more.
  • the cross-linking agent reacts with the active energy ray-curable acrylic adhesive polymer having the functional group.
  • the aging conditions for aging are not particularly limited, but for example, the temperature may be set in the range of 23° C. or higher and 80° C. or lower, and the time may be set in the range of 24 hours or longer and 168 hours or shorter.
  • the active energy ray-curable acrylic pressure-sensitive adhesive composition may optionally further contain a polyfunctional acrylic monomer, a polyfunctional acrylic oligomer, as long as the effects of the present invention are not impaired. , tackifiers, fillers, antioxidants, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents, leveling agents, and other additives may be added.
  • the adhesive composition (B) contains an acrylic adhesive polymer having a functional group, an active energy ray-curable compound, a photopolymerization initiator, and a cross-linking agent that reacts with the functional group.
  • an acrylic pressure-sensitive adhesive polymer having a functional group of the pressure-sensitive adhesive composition (B) the above-described active energy ray-curable acrylic pressure-sensitive adhesive composition (pressure-sensitive adhesive composition (A)) having a functional group
  • pressure-sensitive adhesive composition (A)) having a functional group
  • the same one as exemplified as the acrylic adhesive polymer can be used.
  • the active energy ray-curable compound of the pressure-sensitive adhesive composition (B) includes, for example, a low molecular weight compound having at least two carbon-carbon double bonds in the molecule, which can be formed into a three-dimensional network by irradiation with an active energy ray. is widely used.
  • low molecular weight compounds include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di (Meth) acrylate, neopentyl glycol di (meth acrylate, esters of (meth) acrylic acid and polyhydric alcohol such as dipentaerythritol hexa (meth) acrylate; 2-propenyl-di-3-butenyl cyanurate, 2-hydroxyethylbis(2-acryloxyethyl)isocyanurate, tris(2-methacryloxyethyl)isocyanurate, isocyanurate compounds, etc.
  • active energy ray-curable low molecular weight compounds are It may be used alone or in combination of two or more.
  • active energy ray-curable oligomers such as epoxy acrylate-based oligomers, urethane acrylate-based oligomers, and polyester acrylate-based oligomers can also be used as active energy ray-curable compounds.
  • Epoxy acrylate is synthesized by an addition reaction between an epoxy compound and (meth)acrylic acid.
  • a urethane acrylate is synthesized, for example, by reacting an addition reaction product of a polyol and a polyisocyanate with an isocyanate group remaining at the terminal with a hydroxyl group-containing (meth)acrylate to introduce a (meth)acrylic group at the molecular terminal.
  • Polyester acrylates are synthesized by reacting polyester polyols with (meth)acrylic acid.
  • the active energy ray-curable oligomer preferably has three or more carbon-carbon double bonds in the molecule from the viewpoint of reducing the adhesive force of the adhesive layer 2 after irradiation with an active energy ray. These active energy ray-curable oligomers may be used alone or in combination of two or more.
  • the weight average molecular weight Mw of the active energy ray-curable oligomer is not particularly limited, but is preferably in the range of 100 or more and 30,000 or less. From the viewpoint of both the effect of reducing the adhesive strength, it is more preferably in the range of 500 or more and 6,000 or less.
  • the content of the active energy ray-curable compound is 5 parts by mass or more and 500 parts by mass or less, preferably 50 parts by mass or more and 180 parts by mass or less with respect to 100 parts by mass of the acrylic adhesive polymer having a functional group.
  • the adhesive strength of the adhesive layer 2 is appropriately reduced after the irradiation of the active energy ray, and the semiconductor chip is not damaged and can be easily picked up. can be done.
  • the active energy ray-curable acrylic pressure-sensitive adhesive composition contains a photopolymerization initiator that generates radicals upon exposure to active energy rays.
  • a photopolymerization initiator the same ones as exemplified in the description of the active energy ray-curable acrylic pressure-sensitive adhesive composition (pressure-sensitive adhesive composition (A)) can be used.
  • the amount of the photopolymerization initiator to be added may be the same.
  • the active energy ray-curable acrylic pressure-sensitive adhesive composition (pressure-sensitive adhesive composition (B)) further contains a cross-linking agent for increasing the molecular weight of the above-described functional group-containing acrylic pressure-sensitive adhesive polymer.
  • a cross-linking agent for increasing the molecular weight of the above-described functional group-containing acrylic pressure-sensitive adhesive polymer.
  • the cross-linking agent the same ones as those exemplified as the cross-linking agent in the description of the active energy ray-curable acrylic pressure-sensitive adhesive composition (pressure-sensitive adhesive composition (A)) can be used. The same applies to the blending amount of the cross-linking agent and the aging conditions for reacting the cross-linking agent with the acrylic pressure-sensitive adhesive polymer having a functional group.
  • the active energy ray-curable acrylic pressure-sensitive adhesive composition may optionally contain a tackifier, a filler, an anti-aging agent, as long as the effects of the present invention are not impaired.
  • Additives such as agents, colorants, flame retardants, antistatic agents, surfactants, silane coupling agents and leveling agents may be added.
  • the thickness of the adhesive layer 2 of the adhesive tape 10 for wafer processing of the present invention is not particularly limited, it is preferably in the range of 5 ⁇ m or more and 50 ⁇ m or less, more preferably 6 ⁇ m or more and 20 ⁇ m or less, and 7 ⁇ m or more and 15 ⁇ m or less. is particularly preferred. If the thickness of the adhesive layer 2 is less than 5 ⁇ m, the adhesive strength of the adhesive tape 10 for wafer processing may be excessively lowered. In this case, the die-bonding film 3 tends to be lifted from the pressure-sensitive adhesive layer 2 in the cool-expanding process, and the yield of non-defective semiconductor chips decreases.
  • adhesion failure between the pressure-sensitive adhesive layer 2 and the die-bonding film 3 may occur.
  • the thickness of the adhesive layer 2 exceeds 50 ⁇ m, the internal stress generated when the wafer processing adhesive tape 10 is cool-expanded may be difficult to transmit to the semiconductor wafer with the die bond film 3 as external stress. In that case, there is a possibility that the cutting yield of the semiconductor chip with the die-bonding film 3 may be lowered in the dicing process.
  • the adhesiveness with the die-bonding film 3 is increased, which is not practically preferable from the viewpoint of economy after irradiation with active energy rays.
  • An anchor coat layer matching the composition of the base film 1 may be provided between the base film 1 and the adhesive layer 2 .
  • a release liner may be provided on the surface side (one surface side) of the pressure-sensitive adhesive layer 2 opposite to the base film 1, if necessary.
  • Materials that can be used as the release liner are not particularly limited, and examples thereof include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, papers, and the like.
  • the surface of the release liner may be subjected to a release treatment with a silicone-based release agent, a long-chain alkyl-based release agent, a fluorine-based release agent, or the like, in order to enhance the release property of the pressure-sensitive adhesive layer 2 .
  • the thickness of the release liner is not particularly limited, but those in the range of 10 ⁇ m or more and 200 ⁇ m or less can be preferably used.
  • FIG. 6 is a flow chart illustrating a method for manufacturing the adhesive tape 10 for wafer processing.
  • a release liner is prepared (step S101: release liner preparation step).
  • a coating solution for the adhesive layer 2 (coating solution for forming the adhesive layer), which is a material for forming the adhesive layer 2, is prepared (step S102: coating solution preparing step).
  • the coating solution can be prepared, for example, by uniformly mixing and stirring an acrylic adhesive polymer, a cross-linking agent, and a diluent solvent, which are constituent components of the adhesive layer 2 .
  • the solvent for example, general-purpose organic solvents such as toluene and ethyl acetate can be used.
  • step S103 adhesive layer forming step.
  • the coating method is not particularly limited, and for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, etc. can be used.
  • the drying conditions are not particularly limited, it is preferable that the drying temperature is in the range of 80° C. or higher and 150° C. or lower, and the drying time is in the range of 0.5 minute or longer and 5 minutes or shorter.
  • step S104 base film preparation step
  • step S105 base film laminating step
  • step S106 thermosetting step
  • the coating solution for the adhesive layer 2 is applied on the release liner and dried, and then the substrate is coated on the adhesive layer 2.
  • a method of laminating the film 1 is exemplified, a method of directly applying the coating solution for the pressure-sensitive adhesive layer 2 onto the base film 1 and drying it may be used. From the viewpoint of stable production, the former method is preferably used.
  • the wafer processing pressure-sensitive adhesive tape 10 of the present embodiment may be wound into a roll or may be formed by stacking wide sheets. Alternatively, the adhesive tape 10 for wafer processing in these forms may be cut into a predetermined size to form a sheet or tape.
  • the wafer processing pressure-sensitive adhesive tape 10 of the present embodiment has a die bond film (adhesive layer) 3 formed on the pressure-sensitive adhesive layer 2 of the wafer processing pressure-sensitive adhesive tape 10 in the semiconductor manufacturing process.
  • a die bond film (adhesive layer) 3 can be used in the form of a so-called dicing die bond film 20, in which are adhered and laminated in a detachable manner.
  • the die-bonding film (adhesive layer) 3 is for bonding/connecting the semiconductor chips, which are split and separated by cool expansion, to lead frames and wiring substrates (supporting substrates). Also, when semiconductor chips are stacked, it also serves as an adhesive layer between the semiconductor chips.
  • the semiconductor chip in the first stage is adhered to the semiconductor chip mounting wiring board on which terminals are formed by a die bond film (adhesive layer) 3, and a die bond film (adhesive layer) is further applied on the semiconductor chip in the first stage. ) 3, the second stage semiconductor chip is bonded.
  • the connection terminals of the semiconductor chip in the first stage and the semiconductor chip in the second stage are electrically connected to external connection terminals via wires. It is embedded in the film (adhesive layer) 3, that is, the wire-embedded die-bonding film (adhesive layer) 3 described above.
  • die-bonding film (adhesive layer) 3 in the case where the adhesive tape for wafer processing (dicing tape) 10 of the present embodiment is used as the dicing die-bonding film 20 is shown below, but it is particularly limited to this example. not a thing
  • the die-bonding film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that is cured by heat.
  • the adhesive composition is not particularly limited, and conventionally known materials can be used.
  • a preferred embodiment of the adhesive composition includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a phenol resin as a curing agent for the epoxy resin.
  • a thermosetting adhesive composition obtained by adding a curing accelerator, an inorganic filler, a silane coupling agent, etc. to a resin composition containing.
  • the die-bonding film (adhesive layer) 3 made of such a thermosetting adhesive composition has excellent adhesiveness between the semiconductor chip/support substrate and between the semiconductor chip/semiconductor chip, and also has excellent electrode-embedding properties and/or wire-embedding properties. It is preferable because it can be imparted with properties, can be bonded at a low temperature in the die bonding process, can be cured in a short time, and has excellent reliability after being molded with a sealing agent.
  • a general-purpose die-bonding film in which a wire is not embedded in an adhesive layer and a wire-embedded die-bonding film in which a wire is embedded in an adhesive layer differ from the materials constituting the adhesive composition.
  • the types are mostly the same, but by changing the blending ratio of the materials used and the physical properties and characteristics of each material according to each purpose, it is possible to create general-purpose die-bonding films or wire-embedded die-bonding. Customized for film.
  • the wire-embedded die-bonding film may be used as a general-purpose die-bonding film. That is, the wire-embedded die-bonding film is not limited to wire-embedded applications, but can also be used for bonding semiconductor chips to metal substrates such as lead frames and substrates having irregularities caused by wiring and the like.
  • ⁇ Adhesive composition for general-purpose die-bonding film First, an example of the adhesive composition for general-purpose die-bonding films will be described, but the composition is not particularly limited to this example.
  • shear viscosity characteristics at 80°C can be mentioned. indicates a value in the range of 20,000 Pa ⁇ s to 40,000 Pa ⁇ s, preferably in the range of 25,000 Pa ⁇ s to 35,000 Pa ⁇ s.
  • the above shear viscosity at 80° C. is a value measured by the following method.
  • a laminate is produced by laminating a plurality of die-bonding films (adhesive layers) 3 at 70° C.
  • the laminate is punched out in the thickness direction into a size of 10 mm ⁇ 10 mm to obtain a measurement sample.
  • ARES dynamic viscoelasticity apparatus
  • a circular aluminum plate jig with a diameter of 8 mm is mounted, and then a measurement sample is set.
  • the shear viscosity is measured while applying a strain of 5% to the measurement sample at 35°C and heating the measurement sample at a heating rate of 5°C/min to determine the value of the shear viscosity at 80°C.
  • One example of a preferred embodiment of the adhesive composition for general-purpose die-bonding films is a total of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenol resin, which are resin components of the adhesive composition.
  • the inorganic filler containing the glycidyl group-containing (meth) acrylic acid ester copolymer and the epoxy resin and the phenol resin in an amount of 5 parts by mass or more and 20 parts by mass or less per 100 parts by mass of the total amount of the phenol resin.
  • the glycidyl group-containing (meth)acrylic acid ester copolymer contains, as a copolymer unit, at least an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate. is preferred.
  • the copolymer unit of glycidyl (meth)acrylate is 0.5% by mass or more and 6.0% by mass in the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer from the viewpoint of ensuring appropriate adhesive strength.
  • the glycidyl group-containing (meth)acrylic acid ester copolymer may optionally contain other monomers such as styrene and acrylonitrile as copolymer units from the viewpoint of adjusting the glass transition temperature (Tg). You can
  • the glass transition temperature (Tg) of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of -50 ° C. or higher and 30 ° C. or lower, and improves handling property as a die bond film (tackiness from the viewpoint of suppression), it is more preferably in the range of -10°C or higher and 30°C or lower.
  • Tg glass transition temperature
  • the weight average molecular weight Mw of the glycidyl group-containing (meth)acrylate copolymer is preferably in the range of 500,000 to 2,000,000, more preferably in the range of 700,000 to 1,000,000.
  • the weight-average molecular weight Mw is within the above range, the adhesive strength, heat resistance, and flowability are likely to be appropriate.
  • the weight average molecular weight Mw means a standard polystyrene conversion value measured by gel permeation chromatography.
  • the content ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer in the die-bonding film (adhesive layer) 3 is When the total amount of coalescing and the epoxy resin and phenol resin described later is set to 100 parts by mass as a reference, it is preferably in the range of 52% by mass or more and 90% by mass or less, and in the range of 60% by mass or more and 80% by mass or less. It is more preferable to have
  • epoxy resins include, but are not limited to, bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, alicyclic epoxy resins, aliphatic chain epoxy resins, phenol novolak type epoxy resins, and alkylphenols.
  • Novolac type epoxy resins cresol novolak type epoxy resins, bisphenol A novolac type epoxy resins, diglycidlyetherified biphenols, diglycidlyetherified naphthalene diols, diglycidlyetherified phenols, diglycidyl ethers of alcohols bifunctional epoxy resins such as alkyl-substituted compounds, halides, and hydrogenated compounds thereof, novolac-type epoxy resins, and the like.
  • Other commonly known epoxy resins may also be used, such as polyfunctional epoxy resins and heterocyclic-containing epoxy resins. These may be used alone or in combination of two or more.
  • the softening point of the epoxy resin is preferably in the range of 70°C or higher and 130°C or lower from the viewpoint of adhesive strength and heat resistance.
  • the epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described later.
  • the content of the epoxy resin in the die-bonding film (adhesive layer) 3 is, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film (adhesive layer) 3, the content of the epoxy resin in the adhesive composition.
  • the range is 5% by mass or more and 25% by mass or less. and more preferably in the range of 10% by mass or more and 20% by mass or less.
  • Curing agents for epoxy resins are not particularly limited, but include, for example, phenolic resins that can be obtained by reacting a phenolic compound and a xylylene compound, which is a divalent linking group, in the absence of a catalyst or in the presence of an acid catalyst.
  • phenolic resin include novolac type phenolic resin, resol type phenolic resin, and polyoxystyrene such as polyparaoxystyrene.
  • novolac-type phenolic resins examples include phenol novolak resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolak resins. These phenol resins may be used alone or in combination of two or more. Among these phenolic resins, phenolic novolac resins and phenolic aralkyl resins tend to improve the connection reliability of the die-bonding film (adhesive layer) 3, and are preferably used.
  • the softening point of the phenol resin is preferably in the range of 70°C or higher and 90°C or lower from the viewpoint of adhesive strength and heat resistance.
  • the hydroxyl group equivalent of the phenol resin is preferably in the range of 100 or more and 200 or less from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.
  • the phenolic resin should be It is preferable to add hydroxyl groups in an amount that is preferably 0.5 equivalents or more and 2.0 equivalents or less, more preferably 0.8 equivalents or more and 1.2 equivalents or less. Since it depends on the functional group equivalent of each resin, it cannot be generalized.
  • the total amount of the epoxy resin and the phenol resin is 100 parts by mass as a reference, it is preferably in the range of 5% by mass or more and 23% by mass or less.
  • a curing accelerator such as a tertiary amine, imidazoles, or quaternary ammonium salts can be added to the thermosetting resin composition, if necessary.
  • curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitium tate and the like, and these may be used alone or in combination of two or more.
  • the amount of the curing accelerator added is preferably in the range of 0.1 parts by mass or more and 0.3 parts by mass or less with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin.
  • an inorganic filler can be added to the thermosetting resin composition as necessary.
  • inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystals crystalline silica, amorphous silica, etc., and these may be used singly or in combination of two or more.
  • crystalline silica, amorphous silica and the like are preferably used from the viewpoint of versatility.
  • Aerosil registered trademark: ultrafine dry silica having a nano-sized average particle size is preferably used.
  • the content of the inorganic filler in the die bond film (adhesive layer) 3 is 100 based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, epoxy resin, and phenol resin that are the resin components described above. When expressed as parts by mass, it is preferably in the range of 5% by mass or more and 20% by mass or less.
  • Silane coupling agent Furthermore, a silane coupling agent can be added to the thermosetting resin composition, if necessary, from the viewpoint of improving the adhesive strength to the adherend.
  • Silane coupling agents include, for example, ⁇ -(3,4-epoxycyclohexyl)ethyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, and ⁇ -glycidoxypropylmethyldiethoxysilane, which can be used alone or in combination of two or more.
  • the amount of the silane coupling agent added is preferably in the range of 1.0 parts by mass or more and 7.0 parts by mass or less with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin.
  • thermosetting resin composition may be added to the thermosetting resin composition as long as the function as a die-bonding film is not impaired.
  • Flame retardants include, for example, antimony trioxide, antimony pentoxide, and brominated epoxy resins.
  • ion trapping agents include hydrotalcites, bismuth hydroxide, hydrous antimony oxide, zirconium phosphate having a specific structure, magnesium silicate, aluminum silicate, triazole compounds, tetrazole compounds, and bipyridyl compounds. mentioned.
  • Adhesive composition for wire-embedded die-bonding film ⁇ Adhesive composition for wire-embedded die-bonding film>
  • the composition is not particularly limited to this example.
  • shear viscosity characteristics at 80°C can be mentioned.
  • the shear viscosity is in the range of 200 Pa ⁇ s to 11,000 Pa ⁇ s, preferably 2,000 Pa ⁇ s to 7,000 Pa ⁇ s.
  • the glycidyl group-containing (meth)acrylic acid ester copolymer which is a resin component of the adhesive composition, the epoxy resin, and the phenol resin
  • the total amount is 100 parts by mass as a reference
  • a curing accelerator is added to the epoxy resin and the above 0.01 parts by mass or more and 0.07 parts by mass or less with respect to the total amount of 100 parts by mass with the phenol resin
  • the glycidyl group-containing (meth)acrylic acid ester copolymer contains, as a copolymer unit, at least an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate. is preferred. In the case of a wire-embedded die-bonding film, it is necessary to achieve both improved fluidity during die-bonding and securing of adhesive strength after curing.
  • a group-containing (meth)acrylate copolymer (A) and a glycidyl group-containing (meth)acrylate copolymer (B) having a low copolymer unit ratio of glycidyl (meth)acrylate and a high molecular weight are preferably used in combination, and it is preferable that the former component (A) is contained in a certain amount or more.
  • the glycidyl group-containing (meth)acrylic acid ester copolymer in the adhesive composition for a wire-embedded die-bonding film is specifically described as "a copolymer unit of glycidyl (meth)acrylate is a glycidyl group-containing In the total amount of (meth) acrylic acid ester copolymer, it is contained in the range of 5.0% by mass or more and 15.0% by mass or less, the glass transition temperature (Tg) is in the range of -50 ° C. or more and 30 ° C.
  • the weight average molecular weight Mw means a standard polystyrene conversion value measured by gel permeation chromatography.
  • the content of the glycidyl group-containing (meth)acrylic acid ester copolymer (A) is 60% by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (total of (A) and (B)). It is preferably in the range of 90% by mass or more.
  • the glycidyl group-containing (meth)acrylic acid ester copolymer may optionally contain other monomers such as styrene and acrylonitrile as copolymer units from the viewpoint of adjusting the glass transition temperature (Tg). You can
  • the glass transition temperature (Tg) of the entire glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of -50 ° C. or higher and 30 ° C. or lower. from the point of view of suppression of the temperature, it is more preferably in the range of ⁇ 10° C. or higher and 30° C. or lower.
  • the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms is ethyl (meth)acrylate and/or butyl (meth)acrylate is preferably used.
  • the content ratio of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (total of (A) and (B)) in the wire-embedded die-bonding film (adhesive layer) 3 is determined by the fluidity during die bonding and From the viewpoint of adhesive strength after curing, 100 parts by mass based on the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component in the adhesive composition, and the epoxy resin and phenol resin described later. , the content is preferably in the range of 17% by mass or more and 51% by mass or less, and more preferably in the range of 20% by mass or more and 45% by mass or less.
  • Epoxy resin is not particularly limited, but the same epoxy resins as those exemplified above for the adhesive composition for general-purpose die-bonding films can be used. These may be used alone or in combination of two or more. In the case of a wire-embedded die-bonding film, the bonding strength is ensured, and the generation of voids on the bonding surface is suppressed, and the wire is kept in good condition. In order to control the fluidity and elastic modulus, it is preferable to use two or more types of epoxy resins in combination.
  • Preferred embodiments of the epoxy resin used for the wire-embedded die-bonding film (adhesive layer) 3 include an epoxy resin (C) that is liquid at room temperature and an epoxy resin (D ).
  • the content of the epoxy resin (C), which is liquid at room temperature, is preferably in the range of 15% by mass or more and 75% by mass or less in the total amount of the epoxy resin (total of (C) and (D)). More preferably, it is in the range of not less than 50% by mass and not more than 50% by mass.
  • the epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less from the viewpoint of sufficiently advancing the curing reaction with the phenol resin described later.
  • the content of the epoxy resin in the die-bonding film (adhesive layer) 3 is, from the viewpoint of appropriately expressing the function as a thermosetting adhesive in the die-bonding film (adhesive layer) 3, the content of the epoxy resin in the adhesive composition.
  • the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is a resin component, the epoxy resin, and the phenol resin described later is set to 100 parts by mass, the range is 30% by mass or more and 64% by mass or less. and more preferably in the range of 35% by mass or more and 50% by mass or less.
  • the curing agent for the epoxy resin is not particularly limited, but the same phenolic resins as those exemplified above for the adhesive composition for general-purpose die-bonding films can be used in the same manner.
  • the softening point of the phenol resin is preferably in the range of 70° C. or higher and 115° C. or lower from the viewpoint of adhesive strength and fluidity.
  • the hydroxyl group equivalent of the phenol resin is preferably in the range of 100 or more and 200 or less from the viewpoint of sufficiently advancing the curing reaction with the epoxy resin.
  • the phenolic resin should be The amount of hydroxyl groups is preferably 0.5 equivalents or more and 2.0 equivalents or less, more preferably 0.6 equivalents or more and 1.0 equivalents or less from the viewpoint of compatibility with fluidity during die bonding. is preferred. Since it depends on the functional group equivalent of each resin, it cannot be generalized. When the total amount of the epoxy resin and the phenol resin is 100 parts by mass as a reference, it is preferably in the range of 19% by mass or more and 53% by mass or less.
  • a curing accelerator such as a tertiary amine, imidazoles, or quaternary ammonium salts can be added to the thermosetting resin composition, if necessary.
  • a curing accelerator such as a tertiary amine, imidazoles, or quaternary ammonium salts can be added to the thermosetting resin composition, if necessary.
  • the same curing accelerator as exemplified as the curing accelerator for the adhesive composition for general-purpose die-bonding films can be used in the same manner.
  • the amount of the curing accelerator added is 0.01 parts by mass or more and 0.07 parts by mass or less with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the adhesive surface. A range is preferred.
  • thermosetting resin composition is used from the viewpoint of improving the handleability of the die bond film (adhesive layer) 3, adjusting the fluidity during die bonding, imparting thixotropic properties, improving the adhesive strength, etc.
  • an inorganic filler can be added as necessary.
  • the same inorganic fillers as those exemplified as the above-described adhesive composition for a general-purpose die-bonding film can be used in the same manner. It is preferably used.
  • the content ratio of the inorganic filler in the die-bonding film (adhesive layer) 3 is, from the viewpoint of fluidity during die-bonding, fractureability during cool expansion, and adhesive strength, glycidyl group-containing (meta), which is the resin component described above.
  • glycidyl group-containing (meta) which is the resin component described above.
  • the total amount of the acrylic acid ester copolymer, epoxy resin, and phenol resin is 100 parts by mass as a reference, it is preferably in the range of 10% by mass or more and 80% by mass or less, and 15% by mass or more and 50% by mass or less. is more preferred.
  • the above inorganic filler is a mixture of two or more inorganic fillers with different average particle sizes for the purpose of improving the splitting property of the die-bonding film (adhesive layer) 3 during cool expansion and sufficiently expressing the adhesive strength after curing. preferably. Specifically, it is preferable to use an inorganic filler having an average particle size of 0.1 ⁇ m or more and 5 ⁇ m or less as the main inorganic filler component accounting for 80% by mass or more of the total mass of the inorganic filler.
  • an inorganic filler having a particle diameter of less than 0.1 ⁇ m may be used in combination with the main inorganic filler component in an amount of 20% by mass or less based on the total mass of the inorganic filler.
  • silane coupling agent Furthermore, a silane coupling agent can be added to the thermosetting resin composition, if necessary, from the viewpoint of improving the adhesive strength to the adherend.
  • silane coupling agent the same silane coupling agents as exemplified for the adhesive composition for general-purpose die-bonding films can be used in the same manner.
  • the amount of the silane coupling agent added is 0.5 parts by mass or more and 2.0 parts by mass or less with respect to a total of 100 parts by mass of the epoxy resin and the phenol resin, from the viewpoint of suppressing the generation of voids on the bonding surface. is preferably in the range of
  • thermosetting resin composition may be added to the thermosetting resin composition within a range that does not impair the function of the die-bonding film 3 .
  • flame retardants and ion trapping agents the same flame retardants and ion trapping agents as those exemplified above for the adhesive composition for general-purpose die-bonding films can be used in the same manner.
  • the thickness of the die-bonding film (adhesive layer) 3 is not particularly limited, but it is necessary to ensure adhesive strength, to properly embed wires for connecting semiconductor chips, or to sufficiently fill the unevenness of the wiring circuit of the substrate. , 5 ⁇ m or more and 200 ⁇ m or less. If the thickness of the die-bonding film (adhesive layer) 3 is less than 5 ⁇ m, the adhesive strength between the semiconductor chip and the lead frame, wiring substrate, or the like may be insufficient. On the other hand, if the thickness of the die-bonding film (adhesive layer) 3 exceeds 200 ⁇ m, it is not economical, and it tends to be insufficient to cope with miniaturization and thinning of semiconductor devices.
  • the thickness of the film-like adhesive is more preferably 10 ⁇ m or more and 100 ⁇ m or less, and particularly preferably 20 ⁇ m or more and 75 ⁇ m or less, in terms of high adhesion and thinning of the semiconductor device.
  • the thickness when used as a general-purpose die-bonding film is, for example, preferably in the range of 5 ⁇ m or more and less than 30 ⁇ m, particularly preferably in the range of 10 ⁇ m or more and 25 ⁇ m or less.
  • the thickness is, for example, preferably in the range of 30 ⁇ m to 100 ⁇ m, particularly preferably in the range of 40 ⁇ m to 80 ⁇ m.
  • the die-bonding film (adhesive layer) 3 is manufactured, for example, as follows. First, prepare a release liner. As the release liner, the same release liner as the release liner placed on the adhesive layer 2 of the adhesive tape for wafer processing (dicing tape) 10 can be used. Next, a coating solution for the die-bonding film (adhesive layer) 3, which is a material for forming the die-bonding film (adhesive layer) 3, is prepared.
  • the coating solution includes, for example, a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, a curing agent for the epoxy resin, an inorganic filler, and a curing accelerator, which are constituent components of the die-bonding film (adhesive layer) 3 as described above. It can be produced by uniformly mixing and dispersing a thermosetting resin composition containing an agent, silane coupling, etc., and a dilution solvent.
  • the solvent for example, general-purpose organic solvents such as methyl ethyl ketone and cyclohexanone can be used.
  • a coating solution for the die-bonding film (adhesive layer) 3 is applied onto the release-treated surface of the release liner, which serves as a temporary support, and dried to form a die-bonding film (adhesive layer) having a predetermined thickness. )3.
  • the release-treated surface of another release liner is attached onto the die bond film (adhesive layer) 3 .
  • the coating method is not particularly limited, and for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like can be used.
  • the drying conditions for example, the drying temperature is preferably in the range of 60° C. or more and 200° C.
  • a laminate having release liners on both sides or one side of the die-bonding film (adhesive layer) 3 may also be referred to as the die-bonding film (adhesive layer) 3 .
  • the method for producing the dicing die-bonding film 20 is not particularly limited, it can be produced by a conventionally known method.
  • the adhesive tape for wafer processing (dicing tape) 10 and the die-bonding film 20 are individually prepared, and then the adhesive layer 2 and the adhesive layer 2 of the adhesive tape for wafer processing (dicing tape) 10 are prepared.
  • the release liner of the die-bonding film (adhesive layer) 3 is peeled off, and the adhesive layer 2 and the die-bonding film (adhesive layer) 3 of the adhesive tape for wafer processing (dicing tape) 10 are pressure-bonded by, for example, a hot roll laminator. It may be bonded by pressure bonding with a roll.
  • the bonding temperature is not particularly limited, and is preferably in the range of, for example, 10° C. to 100° C.
  • the bonding pressure linear pressure
  • the dicing die-bonding film 20 may also be referred to as the dicing die-bonding film 20 in some cases as a laminate in which a release liner is provided on the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 .
  • the release liner provided on the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 may be peeled off when the dicing die-bonding film 20 is provided to a work.
  • the dicing die-bonding film 20 may be in the form of being wound in a roll or in the form of laminating wide sheets. Further, a sheet-like or tape-like lamination form formed by cutting the adhesive tape 10 for wafer processing or the die-bonding film 3 of these forms into a predetermined size may be used.
  • an adhesive layer (die bond film 3) and an adhesive film (dicing It can also be produced in the form of a film roll in which a large number of tapes 10) are formed in the shape of islands.
  • the dicing tape 10 is formed in a circular shape with a larger diameter than the die bond film (adhesive layer) 3, and the die bond film (adhesive layer) 3 is formed in a circular shape with a larger diameter than the semiconductor wafer 30.
  • excess dicing tape 10 is peeled off.
  • FIG. 7 shows the production of a semiconductor chip using a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is laminated on the adhesive layer 2 of the wafer processing adhesive tape (dicing tape) 10 of the present embodiment.
  • 4 is a flow chart describing a method;
  • a ring frame (wafer ring) 40 is attached to the outer edge (the exposed portion of the adhesive layer 2) of the wafer processing adhesive tape (dicing tape) 10 of the dicing die-bonding film 20, and the die-bonding film (adhesive 3 is a schematic diagram showing a state in which a semiconductor wafer that has been processed so as to be singulated is attached on layer) 3.
  • FIG. 8 is a flow chart describing a method
  • FIGS. 9A to 9F show an example of a grinding process of a semiconductor wafer in which a plurality of modified regions are formed by laser light irradiation and a bonding process of the semiconductor wafer to a dicing die-bonding film. It is a sectional view. 10(a) to 10(f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a thin film semiconductor wafer having a plurality of modified regions bonded with a dicing die-bonding film.
  • a method for manufacturing a semiconductor chip using the dicing die-bonding film 20 is not particularly limited, and may be any of the methods described above.
  • a manufacturing method by SDBG Step Dicing Before Griding
  • a back grind tape T having an adhesive surface Ta is attached to the first surface Wa of the semiconductor wafer W.
  • the laser light focused inside the wafer is directed to the opposite side of the back grinding tape T, that is, The semiconductor wafer W is irradiated from the second surface Wb side of the semiconductor wafer W along the grid-like dividing lines X, and the modified region 30b is formed in the semiconductor wafer W by ablation due to multiphoton absorption.
  • Step S202 in FIG. 7 modified region forming step.
  • the modified region 30b is a weakened region for breaking and separating the semiconductor wafer W into semiconductor chip units by a cool expansion process.
  • a method of forming the modified region 30b along the dividing line by irradiating the semiconductor wafer W with laser light is described in, for example, Japanese Patent No. 3408805, Japanese Patent Application Laid-Open No. 2002-192370, and Japanese Patent Application Laid-Open No. 2003-338567. Reference can be made to the disclosed methods.
  • the semiconductor wafer W is ground from the second surface Wb to a predetermined thickness to form a thin film.
  • the thickness of the semiconductor wafer 30 is adjusted to preferably 100 ⁇ m or less, more preferably 10 ⁇ m or more and 50 ⁇ m or less, from the viewpoint of thinning the semiconductor device.
  • the thin film semiconductor wafer 30 having therein the modified region 30b that facilitates singulation into a plurality of semiconductor chips 30a by cool expansion in the post-process is obtained (step S203 in FIG. 7: grinding and thinning process).
  • the grinding load of the grinding wheel is added due to differences in the final thickness of the semiconductor wafer 30 after grinding, the number of scanning times of laser light irradiation (input power), the physical properties of the back grinding tape T, and the like.
  • the semiconductor wafer 30 is broken, cracks grow in the vertical direction starting from the modified regions 30b, and the semiconductor wafer 30 is already split into individual semiconductor chips 30a at this stage. Sometimes.
  • a thin film semiconductor wafer 30 (the semiconductor wafer 30 is already attached to the semiconductor chip 30a) and has therein a plurality of modified regions 30b held by the back grinding tape T. If the semiconductor chips 30a are cut, the plurality of semiconductor chips 30a) are bonded to the die bond film 3 of the separately prepared dicing die bond film 20 (step S204 in FIG. 7: bonding step). In this step, after peeling off the release liner from the pressure-sensitive adhesive layer 2 and the die-bonding film (adhesive layer) 3 of the dicing die-bonding film 20 cut into a circle, as shown in FIG.
  • a ring frame (wafer ring) 40 is attached to the outer edge (adhesive layer 2 exposed part) of the dicing tape 10, and the die bond film (adhesive layer) 3 laminated on the upper center part of the adhesive layer 2 of the dicing tape 10
  • a thin-film semiconductor wafer 30 (a plurality of semiconductor chips 30a when the semiconductor wafer 30 has already been cut into semiconductor chips 30a) that has been processed so as to be singulated is attached.
  • the back grind tape T is peeled off from the thin-film semiconductor wafer 30 (or the plurality of semiconductor chips 30a if the semiconductor wafer 30 has already been cut into semiconductor chips 30a).
  • the sticking is performed while pressing with a pressing means such as a pressing roll.
  • the bonding temperature is not particularly limited, and for example, it is preferably in the range of 20° C. or higher and 130° C. or lower. is more preferred.
  • the bonding pressure is not particularly limited, and is preferably in the range of 0.1 MPa or more and 10.0 MPa or less. Since the adhesive tape for wafer processing (dicing tape) 10 of the present invention has a certain degree of heat resistance, there is no particular problem in handling it even if the bonding temperature is high.
  • a thin film semiconductor wafer 30 has a plurality of modified regions 30b formed therein along dicing lines X so that it can be singulated into a plurality of semiconductor chips 30a. It is
  • a first expansion step under conditions of relatively low temperature for example, ⁇ 30° C. or higher and 0° C. or lower
  • a cool expansion step is performed as shown in FIG.
  • the die-bonding film (adhesive layer) 3 of the dicing die-bonding film 20 is cut into small pieces of the die-bonding film (adhesive layer) 3a corresponding to the size of the semiconductor chips 30a.
  • the semiconductor chip 30a with the die-bonding film 3a is obtained (step S205 in FIG. 7: cool expansion step).
  • a hollow columnar push-up member (not shown) provided in the expanding device is lifted in contact with the adhesive tape for wafer processing (dicing tape) 10 under the dicing die-bonding film 20 to enable singulation.
  • the wafer processing adhesive tape (dicing tape) 10 of the dicing die bond film 20 to which the processed semiconductor wafer 30 is bonded is expanded so as to be stretched in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30.
  • the internal stress generated by the omnidirectional tension of the wafer processing adhesive tape (dicing tape) 10 due to the cool expansion is applied to the semiconductor wafer 30 processed to be singulated and the die bond film 3 attached to the semiconductor wafer 30. is transmitted as an external stress to Due to this external stress, cracks grow in the vertical direction starting from a plurality of grid-shaped modified regions 30b formed inside the semiconductor wafer 30, and the semiconductor wafer 30 is cleaved into individual semiconductor chips 30a.
  • the embrittled die-bonding film 3 is also cut into small pieces of the die-bonding film 3a having the same size as the semiconductor chip 30a.
  • the semiconductor wafer 30 has already been cut into individual semiconductor chips 30a in the grinding and thinning process, only the die bond film 3 that is in close contact with the semiconductor chips 30a and is brittle at a low temperature is exposed to the semiconductor by cool expansion.
  • the semiconductor chip 30a with the die-bonding film 3a is obtained by cutting the die-bonding film 3a into small pieces corresponding to the size of the chip 30a.
  • the temperature conditions in the cool expansion step are, for example, -30°C or higher and 0°C or lower, preferably -20°C or higher and -5°C or lower, more preferably -15°C or higher and -5°C or lower. and particularly preferably -15°C.
  • the expansion speed (the speed at which the hollow columnar push-up member rises) in the cool expansion step is preferably in the range of 0.1 mm/second or more and 1000 mm/second or less, more preferably 10 mm/second or more and 300 mm/second or less. Range.
  • the expansion amount (push-up height of the hollow columnar push-up member) in the cool expansion step is preferably in the range of 3 mm or more and 16 mm or less.
  • the base film 1 has, as described above, an ethylene-unsaturated Since it is composed of laminated resin layers containing an ionomer resin in which a carboxylic acid copolymer is crosslinked with a specific concentration of zinc ions, ion aggregates (clusters ) is sufficiently and appropriately developed, the cross-linking effect makes it difficult for the ion aggregates (clusters) to be destroyed even when the base film 1 is expanded, and the tension number of the molecular chains between the ion aggregates increases along with the expansion. To increase.
  • the die bond film 3 is cut into small pieces of the die-bonding film 3a corresponding to the size of the semiconductor chip 30a with a high yield, and the semiconductor chip 30a with the die-bonding film 3a is obtained with a high yield. Even if a wire-embedded die-bonding film having a large thickness and high fluidity (low melt viscosity at high temperatures) is used as the die-bonding film 3, the die-bonding film can be cut with high yield.
  • the hollow cylindrical push-up member of the expansion device is lowered, and the expanded state of the adhesive tape for wafer processing (dicing tape) 10 is released.
  • a second expanding step under conditions of relatively high temperature for example, 10° C. or higher and 30° C. or lower
  • a room temperature expansion step is performed as shown in FIG.
  • the distance (kerf width) between the semiconductor chips 30a with the agent layer) 3a is widened.
  • a columnar table (not shown) provided in the expanding device is lifted in contact with the adhesive tape for wafer processing (dicing tape) 10 under the dicing die-bonding film 20 to process the dicing die-bonding film 20 into a wafer.
  • the adhesive tape (dicing tape) 10 is expanded (step S206 in FIG. 7: normal temperature expansion step).
  • the recognition of the semiconductor chips 30a by a CCD camera or the like is enhanced, and the adjacent semiconductor chips 30a can be easily picked up. It is possible to prevent re-bonding of the semiconductor chips 30a with the die bond film (adhesive layer) 3a caused by contact between the semiconductor chips 30a. As a result, in the later-described pick-up process, the pick-up property of the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a is improved.
  • the temperature condition in the normal temperature expansion step is, for example, 10°C or higher, preferably 15°C or higher and 30°C or lower.
  • the expansion speed (the speed at which the cylindrical table rises) in the normal temperature expansion step is, for example, in the range of 0.1 mm/sec to 50 mm/sec, preferably in the range of 0.3 mm/sec to 30 mm/sec. .
  • the expansion amount in the normal temperature expansion step is, for example, in the range of 3 mm or more and 20 mm or less.
  • the table vacuum-adsorbs the wafer processing adhesive tape (dicing tape) 10 . Then, the table is lowered together with the work while maintaining the adsorption by the table, and the expanded state of the adhesive tape for wafer processing (dicing tape) 10 is released.
  • the adhesive tape for wafer processing (dicing tape) 10 is vacuum-adsorbed to the table, the peripheral portion of the adhesive tape for wafer processing (dicing tape) 10 outside the semiconductor chip 30a holding area is thermally shrunk by hot air blowing, resulting in expansion. It is preferable to keep the adhesive tape for wafer processing (dicing tape) 10 in a tensioned state by eliminating slack. After the heat shrinkage, the vacuum suction state by the table is released.
  • the temperature of the hot air may be adjusted according to the physical properties of the base film 1, the distance between the hot air outlet and the dicing tape, the amount of air, and the like.
  • the distance between the hot air outlet and the adhesive tape for wafer processing (dicing tape) 10 is preferably in the range of 15 mm or more and 25 mm or less, for example.
  • the air volume is preferably in the range of, for example, 35 L/min or more and 45 L/min or less.
  • the semiconductor chip 30a of the adhesive tape for wafer processing (dicing tape) 10 is rotated while rotating the stage of the expanding device at a rotation speed in the range of, for example, 3°/sec or more and 10°/sec or less. Hot air is blown along the circumference outside the holding area. By such hot air blowing, the temperature of the surface of the adhesive tape for wafer processing (dicing tape) 10 is adjusted to around 80° C., for example.
  • an ethylene/unsaturated carboxylic acid-based copolymer containing a structural unit derived from an unsaturated carboxylic acid at a specific content ratio is specified as the base film 1.
  • the unsaturated carboxylic acid-derived Since the ion aggregates (clusters) formed by the aggregates of the ionic bonds of the carboxylate ions of the acid groups and the zinc ions develop sufficiently and appropriately, the cross-linking effect of Since the ionic aggregates (clusters) are not completely destroyed and are appropriately maintained, the entropic elasticity works strongly in the heat shrinking process after expansion, and the stretched and oriented molecules easily return to their original state. .
  • the restoring force of the base film 1 against strain after stretching becomes sufficient during heating, and the circumference of the dicing tape 10 does not generate heat wrinkles or the like in the heat shrinking process of the adhesive tape 10 for wafer processing.
  • the part can be heat shrunk without problems to eliminate slack. As a result, a sufficient kerf width is ensured between individual semiconductor chips, and good pick-up performance can be obtained in the pick-up process described later.
  • an adhesive tape for wafer processing (dicing tape) 10 is irradiated with active energy rays from the side of the base film 1 to cure and shrink the adhesive layer 2, thereby forming a die-bonding film 3a of the adhesive layer 2.
  • active energy ray irradiation step the active energy rays used for the post-irradiation include ultraviolet rays, visible rays, infrared rays, electron beams, ⁇ rays, ⁇ rays, and the like.
  • ultraviolet rays (UV) and electron beams (EB) are preferred, and ultraviolet rays (UV) are particularly preferred.
  • the light source for irradiating the ultraviolet rays (UV) is not particularly limited, but examples include black lights, ultraviolet fluorescent lamps, low pressure mercury lamps, medium pressure mercury lamps, high pressure mercury lamps, ultra high pressure mercury lamps, carbon arc lamps, metal halide lamps, and xenon lamps. etc. can be used.
  • ArF excimer laser, KrF excimer laser, excimer lamp, synchrotron radiation, or the like can also be used.
  • the amount of ultraviolet (UV) irradiation light is not particularly limited, and is preferably in the range of 100 mJ/cm 2 or more and 2,000 mJ/cm 2 or less, and in the range of 300 mJ/cm 2 or more and 1,000 mJ/cm 2 or less. is more preferable.
  • the active energy ray-reactive carbon-carbon double bond concentration is for example, since it is controlled within the range of 0.85 mmol or more and 1.60 mmol or less per 1 g of the active energy ray-curable adhesive composition, the adhesive layer 2 after ultraviolet (UV) irradiation has carbon-carbon double bonds.
  • the three-dimensional cross-linking reaction increases the cross-linking density, that is, the storage elastic modulus is greatly increased, the glass transition temperature is also increased, and the volume shrinkage is also increased, so that the adhesive force to the die-bonding film 3a can be sufficiently reduced.
  • the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a can be easily picked up in the picking-up process described later.
  • the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a which has been cut and separated by the expanding process described above, is attached to the adhesive tape (dicing tape) 10 for wafer processing after ultraviolet (UV) irradiation. So-called pick-up is performed to peel off the agent layer 2 (step S208 in FIG. 7: peeling (pick-up) step).
  • the pick-up method for example, as shown in FIG.
  • the surface is pushed up by a push-up pin (needle) 60 and, as shown in FIG. A method of peeling off from the adhesive layer 2 of the adhesive tape for wafer processing (dicing tape) 10 by suction, and the like.
  • a semiconductor chip 30a with a die-bonding film (adhesive layer) 3a is obtained.
  • the pick-up condition is not particularly limited as long as it is practically permissible, and usually, the thrusting speed of the thrusting pin (needle) 60 is set within a range of 1 mm/second or more and 100 mm/second or less.
  • the thrusting speed of the thrusting pin (needle) 60 is set within a range of 1 mm/second or more and 100 mm/second or less.
  • the thickness of the semiconductor chip 30a thickness of the semiconductor wafer
  • it is set within the range of 1 mm / sec or more and 20 mm / sec or less.
  • From the viewpoint of productivity it is more preferable to be able to set within the range of 5 mm/sec to 20 mm/sec.
  • the thrust height of the thrust pin that enables pickup without damaging the semiconductor chip 30a is preferably set within the range of 100 ⁇ m or more and 600 ⁇ m or less from the same viewpoint as described above. From the viewpoint of reduction, it is more preferable that the thickness can be set within the range of 100 ⁇ m or more and 450 ⁇ m or less. From the viewpoint of productivity, it is particularly preferable that the thickness can be set within the range of 100 ⁇ m or more and 350 ⁇ m or less. It can be said that such an adhesive tape for wafer processing (dicing tape) capable of reducing the thrust height is excellent in pick-up properties.
  • Wafer processing pressure-sensitive adhesive tape (dicing tape) 10 of the present invention composed of a base film 1 consisting of a laminated resin layer containing an ionomer resin having is used as a form of a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is releasably adhered and laminated on an adhesive layer 2 of a wafer processing adhesive tape (dicing tape) 10 in a semiconductor manufacturing process.
  • the semiconductor wafer 30 with the die-bonding film 3 can be formed satisfactorily by cool expansion.
  • a sufficient kerf width can be secured by normal temperature expansion and heat shrinking, and in the die-bonding film 3a after cutting, the adhesive layer 2 of the adhesive tape for wafer processing (dicing tape) 10 is cut.
  • the individual semiconductor chips 30a with the die-bonding films 3a can be favorably picked up.
  • the manufacturing method described with reference to FIGS. 10A to 10F is an example (SDBG) of manufacturing the semiconductor chip 30a using the dicing die bond film 20, and the adhesive tape for wafer processing (dicing tape) 10 is used.
  • the method used as the shape of the dicing die-bonding film 20 is not limited to the above method.
  • the method of forming the modified regions 30b along the dividing lines by irradiating the semiconductor wafer W with laser light as described in FIG. A method of forming dividing grooves with a depth of .
  • the semiconductor wafer W is held by the back grind tape T2.
  • Dividing grooves having a predetermined depth are formed on the first surface Wa side of W using a rotary blade such as a dicing machine.
  • the back grind tape T having the adhesive surface Ta is attached to the first surface Wa side of the semiconductor wafer W, and the back grind tape T2 is peeled off from the semiconductor wafer W, as shown in FIG. 9B. state.
  • a method of grinding the semiconductor wafer W until the dividing groove itself is exposed on the second surface Wb side may be employed, or the semiconductor wafer W may be divided from the second surface Wb side.
  • the semiconductor wafer W is ground before reaching the groove, and thereafter, cracks are generated between the dividing groove and the second surface by the action of the grinding load pressure of W from the grinding wheel to the semiconductor wafer, thereby dividing the semiconductor wafer W ( A method of forming a plurality of semiconductor chips 30a) may be employed.
  • the depth from the first surface Wa of the division grooves to be formed is appropriately determined according to the adopted method.
  • the dicing die bond film 20 of the present embodiment can be used without being limited to the above method as long as it can be attached to the semiconductor wafer 30 during dicing.
  • the adhesive tape for wafer processing (dicing tape) 10 of the present invention is particularly integrated with a wire-embedded die-bonding film to form a dicing die-bonding film in a manufacturing method for obtaining a thin-film semiconductor chip such as DBG, stealth dicing, or SDBG. It is suitable as a dicing tape for use as. Of course, it is also possible to integrate with a general-purpose die-bonding film.
  • a semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 in which a wafer processing adhesive tape (dicing tape) 10 and a die bond film 3 to which the present embodiment is applied is integrated will be described below in detail. explained in detail.
  • a semiconductor device is produced by, for example, bonding the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a described above to a support member for mounting a semiconductor chip or a semiconductor chip by thermocompression bonding, followed by a wire bonding process and sealing. It can be obtained through processes such as a sealing process using a material.
  • FIG. 11 shows a semiconductor chip mounted with a semiconductor chip manufactured using a dicing die-bonding film 20 in which a wafer processing adhesive tape (dicing tape) 10 to which the present embodiment is applied and a wire-embedded die-bonding film 3 are integrated.
  • 1 is a schematic cross-sectional view of one mode of a semiconductor device having a stacked structure;
  • FIG. A semiconductor device 70 shown in FIG. 11 includes a semiconductor chip mounting support substrate 4, cured die-bonding films (adhesive layers) 3a1 and 3a2, a first-stage semiconductor chip 30a1, a second-stage semiconductor chip 30a2, and a sealing material 8 .
  • the semiconductor chip mounting support substrate 4, the cured die bond film 3a1, and the semiconductor chip 30a1 constitute a support member 9 for the semiconductor chip 30a2.
  • a plurality of external connection terminals 5 are arranged on one surface of the semiconductor chip mounting support substrate 4 , and a plurality of terminals 6 are arranged on the other surface of the semiconductor chip mounting support substrate 4 .
  • the semiconductor chip mounting support substrate 4 has wires 7 for electrically connecting connection terminals (not shown) of the semiconductor chips 30 a 1 and 30 a 2 and the external connection terminals 5 .
  • the semiconductor chip 30a1 is adhered to the semiconductor chip mounting support substrate 4 by the cured die bond film 3a1 in such a manner as to fill the irregularities resulting from the external connection terminals 5. As shown in FIG.
  • the semiconductor chip 30a2 is bonded to the semiconductor chip 30a1 with a cured die bond film 3a2.
  • the wire-embedded die-bonding film 3a is suitably used for a semiconductor device having a laminated structure in which a plurality of semiconductor chips 30a are stacked.
  • FIG. 12 shows a semiconductor chip mounted with a dicing die-bonding film 20 that integrates a wafer processing adhesive tape (dicing tape) 10 and a general-purpose die-bonding film 3 to which the present embodiment is applied.
  • FIG. 11 is a schematic cross-sectional view of one mode of another semiconductor device;
  • a semiconductor device 80 shown in FIG. 12 includes a semiconductor chip mounting support substrate 4 , a cured die bond film 3 a , a semiconductor chip 30 a and a sealing material 8 .
  • the semiconductor chip mounting support substrate 4 is a support member for the semiconductor chip 30a, and includes connection terminals (not shown) of the semiconductor chip 30a and external connection terminals (not shown) arranged on the main surface of the semiconductor chip mounting support substrate 4 (see FIG. not shown).
  • the semiconductor chip 30a is adhered to the semiconductor chip mounting support substrate 4 by the cured die bond film 3a.
  • Semiconductor chip 30 a and wires 7 are sealed with sealing material 8 .
  • Resin (TPO-2) Multi-stage polymerized propylene/ethylene copolymer [Reactor TPO] "Cataloy (registered trademark)” manufactured by Lyondale Basel, Vicat softening temperature: 59°C
  • ⁇ Base film 1 (a)> Ionomer resin (IO-1) is put into each extruder of a type 1 (same resin) 3-layer T-die film molding machine, and molded at a processing temperature of 240 ° C. The thickness of the 3-layer structure of the same resin A 90 ⁇ m base film 1(a) was produced. The third resin layer side (the surface opposite to the surface in contact with the second resin layer) was matted. The thickness of each resin layer was set to 1st resin layer (surface side in contact with adhesive layer 2)/2nd resin layer/3rd resin layer 30 ⁇ m/30 ⁇ m/30 ⁇ m. The content ratio of the specific ionomer resin in each resin layer is 100% by mass.
  • the total thickness of the resin layers (the first resin layer, the second resin layer and the third resin layer) containing a specific ionomer resin at a content ratio of 80% by mass or more is the total thickness of the base film 1(a). 100% of the height.
  • ⁇ Base film 1(b) to 1(j), 1(l) to 1(n)> The same as the base film 1 (a) except that the ionomer resin (IO-1) was changed to ionomer resins (IO-2) to (IO-10) and (IO-12) to (IO-14). Then, substrate films 1(b) to 1(j) and 1(l) to 1(n) were produced.
  • the content ratio of the specific ionomer resin in each resin layer of the base films 1(b) to 1(j) and 1(l) to 1(n) is 100% by mass.
  • the total thickness of the resin layers (the first resin layer, the second resin layer and the third resin layer) containing a specific ionomer resin at a content ratio of 80% by mass or more is the total thickness of the base film 1 is 100% of
  • the content ratio of the specific ionomer resin in each resin layer is 100% by mass.
  • the total thickness of the resin layers (the first resin layer, the second resin layer and the third resin layer) containing a specific ionomer resin at a content ratio of 80% by mass or more is the total thickness of the base film 1(o). 100% of the height.
  • ⁇ Base film 1 (p)> The ionomer resin (IO-2) is used as the resin composition for the first resin layer, the ionomer resin (IO-3) is used as the resin composition for the second resin layer, and the ionomer resin (IO-3) is used as the resin composition for the third resin layer.
  • IO-4) is prepared, put into each extruder of a three-type (resin) three-layer T-die film molding machine, and molded at a processing temperature of 240 ° C.
  • the three-layer structure of the three resins has a thickness of 90 ⁇ m.
  • a base film 1 (p) was produced.
  • the third resin layer side (the surface opposite to the surface in contact with the second resin layer) was matted.
  • the content ratio of the specific ionomer resin in each resin layer is 100% by mass.
  • the total thickness of the resin layers (the first resin layer, the second resin layer and the third resin layer) containing the specific ionomer resin at a content ratio of 80% by mass or more is the total thickness of the base film 1(p). 100% of the height.
  • ⁇ Base film 1 An ionomer resin (IO-2) is used as the resin composition for the first resin layer and the second resin layer, and a mixed resin (IO-2/PA) of an ionomer resin and a polyamide resin is used as the resin composition for the third resin layer.
  • IO-2/PA mixed resin
  • IO-2/PA mixed resin
  • the content ratio of the specific ionomer resin in the first resin layer and the second resin layer is 100% by mass, and the content ratio of the specific ionomer resin in the third resin layer is 90% by mass.
  • the total thickness of the resin layers (the first resin layer, the second resin layer and the third resin layer) containing a specific ionomer resin at a content ratio of 80% by mass or more is the total thickness of the base film 1(q). 100% of the height.
  • ⁇ Base film 1 An ionomer resin (IO-2) is used as the resin composition for the first resin layer, and a mixed resin (IO-2/TPO-1) of an ionomer resin and an olefinic thermoplastic elastomer resin is used as the resin composition for the second resin layer.
  • IO-2/TPO-1 a mixed resin of an ionomer resin and an olefinic thermoplastic elastomer resin
  • the content ratio of the specific ionomer resin in the first resin layer is 100% by mass
  • the content ratio of the specific ionomer resin in the second resin layer is 80% by mass.
  • the total thickness of the resin layers (the first resin layer and the second resin layer) containing the specific ionomer resin at a content ratio of 80% by mass or more is 100% of the total thickness of the base film 1(r). be.
  • ⁇ Base film 1 (s)> Prepare an ionomer resin (IO-2) as a resin composition for the first resin layer and the third resin layer, and prepare an olefinic thermoplastic elastomer resin (TPO-1) as a resin composition for the second resin layer;
  • the seed (resin) is put into each extruder of a three-layer T-die film molding machine, and molded at a processing temperature of 240° C. to form a base film 1(s) having a thickness of 90 ⁇ m with a three-layer configuration of two types of resin. made.
  • the third resin layer side (the surface opposite to the surface in contact with the second resin layer) was matted.
  • the content ratio of the specific ionomer resin in the first resin layer and the third resin layer is 100% by mass.
  • the total thickness of the resin layers (the first resin layer and the third resin layer) containing the specific ionomer resin at a content ratio of 80% by mass or more is 89% of the total thickness of the base film 1(s). be.
  • ⁇ Base film 1 (t)> Prepare an ionomer resin (IO-2) as a resin composition for the first resin layer and the second resin layer, and prepare an olefinic thermoplastic elastomer resin (TPO-2) as a resin composition for the third resin layer;
  • the seed (resin) was put into each extruder of a three-layer T-die film molding machine and molded at a processing temperature of 240 ° C. to form a base film 1 (t) having a thickness of 120 ⁇ m with a three-layer configuration of two kinds of resins. made.
  • the third resin layer side (the surface opposite to the surface in contact with the second resin layer) was matted.
  • the content ratio of the specific ionomer resin in the first resin layer and the second resin layer is 100% by mass.
  • the total thickness of the resin layers (the first resin layer and the second resin layer) containing the specific ionomer resin at a content ratio of 80% by mass or more is 67% of the total thickness of the base film 1(t). be.
  • AIBN azobisisobutyronitrile
  • an isocyanate group and an active energy ray-reactive carbon-carbon double bond manufactured by Showa Denko KK are added as an active energy ray-reactive compound manufactured by Showa Denko KK.
  • 2-isocyanatoethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1/1 molecule, double bond group: 1/1 molecule) 21.0 parts by mass (135.35 mmol: 74.8 mol% with respect to 2-HEA) and reacted with part of the hydroxyl groups of 2-HEA to obtain a solution of acrylic adhesive polymer (A) having carbon-carbon double bonds in side chains ( Solid content concentration: 50% by mass, weight average molecular weight Mw: 380,000, solid content hydroxyl value: 21.1 mgKOH/g, solid content acid value: 2.7 mgKOH/g, carbon-carbon double bond content: 1.12 mmol /g) were synthesized. In the above reaction, 0.05 part by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor for maintaining the reactivity of carbon-carbon double bonds.
  • IGM Resins B.I. V. 2.0 parts by mass of an ⁇ -hydroxyalkylphenone-based photopolymerization initiator (trade name: Omnirad 184) manufactured by IGM Resins B.V. V. 0.4 parts by mass of an acylphosphine oxide-based photopolymerization initiator (trade name: Omnirad 819) manufactured by Tosoh Corporation as a cross-linking agent, and a TDI-based polyisocyanate-based cross-linking agent manufactured by Tosoh Corporation (trade name: Coronate L-45E, Solid content concentration: 45% by mass) was blended at a ratio of 2.56 parts by mass (1.15 parts by mass in terms of solid content, 1.75 mmol), diluted with ethyl acetate and stirred to obtain a solid content concentration of 22% by mass.
  • a solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) was prepared.
  • Adhesive Composition Solution As the adhesive composition for the die bond film (adhesive layer) 3 of the dicing die bond film 20, solutions of the following adhesive compositions 3(a) to 3(d) were prepared.
  • thermosetting resin 26 parts by mass of a bisphenol type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Co., Ltd., cresol novolak type epoxy manufactured by Tohto Kasei Co., Ltd.
  • Resin trade name: YDCN-700-10, epoxy equivalent 210, softening point 80 ° C.
  • cross-linking agent (trade name: Milex XLC-LL, hydroxyl equivalent: 175, softening Point: 77 ° C., water absorption: 1 mass%, heating mass reduction rate: 4 mass%) 1 part by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71 ° C., water absorption: 1 mass%, heating mass reduction rate: 4 mass%) 25 parts by mass, phenolic resin manufactured by Air Water Co., Ltd. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83 ° C.
  • silica filler dispersion manufactured by Admatechs Co., Ltd. as an inorganic filler (trade name: SC2050-HLG, average particle size: 0.50 ⁇ m) 15 parts by mass, silica filler dispersion manufactured by Admatechs Co., Ltd. (trade name: SC1030-HJA, average particle size: 0.25 ⁇ m) 14 parts by mass, silica manufactured by Nippon Aerosil Co., Ltd.
  • a glycidyl group-containing (meth) acrylic acid ester copolymer manufactured by Nagase ChemteX Corporation (trade name: HTR-860P-30B-CHN, glycidyl (meth) acrylate content : 8 mass%, weight average molecular weight Mw: 230,000, Tg: -7 ° C.) 37 parts by mass, glycidyl group-containing (meth) acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd.
  • a weight percent solution of adhesive composition 3(a) was prepared.
  • the content of the inorganic filler was 20.5% by mass with respect to the total amount of the resin component.
  • the shear viscosity at 80° C. of the die-bonding film (adhesive layer) 3 formed from the solution of the adhesive composition 3(a) was 3,800 Pa ⁇ s.
  • thermosetting resin Tohto Kasei Co., Ltd. bisphenol F type epoxy resin (trade name: YDF-8170C, epoxy equivalent: 159, molecular weight: 310, liquid at room temperature) 21 parts, Tohto Kasei Co., Ltd. cresol Novolak type epoxy resin (trade name: YDCN-700-10, epoxy equivalent 210, softening point 80 ° C.) 33 parts by mass, Air Water Co., Ltd.
  • phenol resin (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71 ° C., water absorption: 1% by mass, heating mass reduction rate: 4% by mass) 46 parts by mass, silica filler dispersion manufactured by Admatechs Co., Ltd. as an inorganic filler (trade name: SC1030-HJA, average Cyclohexanone as a solvent was added to a resin composition consisting of 18 parts by mass of a particle size of 0.25 ⁇ m, mixed with stirring, and further dispersed for 90 minutes using a bead mill.
  • silica filler dispersion manufactured by Admatechs Co., Ltd. as an inorganic filler
  • SC1030-HJA average Cyclohexanone as a solvent
  • a glycidyl group-containing (meth) acrylic acid ester copolymer manufactured by Nagase ChemteX Corporation (trade name: HTR-860P-30B-CHN, glycidyl (meth) acrylate content : 8 mass%, weight average molecular weight Mw: 230,000, Tg: -7 ° C.) 16 parts by mass, glycidyl group-containing (meth) acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd.
  • a weight percent solution of adhesive composition 3(b) was prepared.
  • the content of the inorganic filler was 10.0% by mass with respect to the total amount of the resin component.
  • the shear viscosity at 80° C. of the die-bonding film (adhesive layer) 3 formed from the solution of the adhesive composition 3(b) was 9,700 Pa ⁇ s.
  • thermosetting resin 11 parts by mass of a bisphenol type epoxy resin manufactured by Printec Co., Ltd. (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature), dicyclopentadiene type epoxy manufactured by DIC Corporation.
  • Resin (trade name: HP-7200H, epoxy equivalent: 280, softening point: 83 ° C.) 40 parts by mass, DIC Corporation bisphenol S type epoxy resin (trade name: EXA-1514, epoxy equivalent: 300, softening point: 75 ° C.) 18 parts by mass, a phenolic resin manufactured by Mitsui Chemicals, Inc. as a cross-linking agent (trade name: Milex XLC-LL, hydroxyl equivalent: 175, softening point: 77 ° C., water absorption: 1 mass%, heating mass reduction rate: 4% by mass) 1 part by mass, phenolic resin manufactured by Air Water Inc.
  • a glycidyl group-containing (meth) acrylic acid ester copolymer manufactured by Nagase ChemteX Corporation (trade name: HTR-860P-30B-CHN, glycidyl (meth) acrylate content : 8 mass%, weight average molecular weight Mw: 230,000, Tg: -7 ° C.) 30 parts by mass, glycidyl group-containing (meth) acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd.
  • a solution of adhesive composition 3(c) with a concentration of 20% by weight was prepared.
  • the content of the inorganic filler was 18.0% by mass with respect to the total amount of the resin component.
  • the shear viscosity at 80° C. of the die-bonding film (adhesive layer) 3 formed from the solution of the adhesive composition 3(c) was 3,600 Pa ⁇ s.
  • thermosetting resin cresol novolac epoxy resin (trade name: YDCN-700-10, epoxy equivalent: 210, softening point: 80 ° C.) manufactured by Tohto Kasei Co., Ltd. 54 parts by mass
  • Mitsui Chemicals Co., Ltd. as a cross-linking agent phenol resin (trade name: Milex XLC-LL, hydroxyl equivalent: 175, water absorption: 1.8%) 46 parts by mass, silica manufactured by Nippon Aerosil Co., Ltd.
  • inorganic filler trade name: Aerosil R972, average particle size : 0.016 ⁇ m
  • cyclohexanone was added as a solvent, mixed with stirring, and further dispersed for 90 minutes using a bead mill.
  • a glycidyl group-containing (meth) acrylic acid ester copolymer manufactured by Nagase ChemteX Co., Ltd. (trade name: HTR-860P-3CSP, glycidyl (meth) acrylate content: 3) is added to the resin composition as a thermoplastic resin.
  • a solution of the adhesive composition 3 (a) for forming the die-bonding film (adhesive layer) 3 is prepared, and the dried die-bonding film ( The solution of the adhesive composition 3(a) is applied so that the adhesive layer) 3 has a thickness of 30 ⁇ m, and is first heated at a temperature of 90° C. for 5 minutes and then at a temperature of 140° C. for 5 minutes. The solvent was dried by heating in two stages, and a die-bonding film (adhesive layer) 3 provided with a release liner was produced.
  • a protective film for example, a polyethylene film or the like
  • the die-bonding film (adhesive layer) 3 provided with the release liner prepared above is cut into a circle with a diameter of 335 mm together with the release liner, and the adhesive layer-exposed surface of the die-bonding film (adhesive layer) 3 (peeling The liner-free surface) was attached to two surfaces of the pressure-sensitive adhesive layer of the dicing tape 10 from which the release liner was removed.
  • the bonding conditions were 23° C., 10 mm/sec, and linear pressure of 30 kgf/cm.
  • a circular die bond film (adhesive layer) 3 with a diameter of 335 mm is laminated on the center part of the adhesive layer 2 of the circular dicing sheet 10 with a diameter of 370 mm.
  • a dicing die-bonding film 20 (DDF(a)) was produced.
  • Examples 2 to 19 All the same as in Example 1 except that the base film 1 (a) was changed to the base films 1 (b) to 1 (j) and 1 (l) to 1 (t) shown in Tables 1 to 3, respectively.
  • Dicing die-bonding films 20 DDF(b) to DDF(j), DDF(1) to DDF(t) were prepared in the same manner.
  • Example 20 A dicing die-bonding film 20 (DDF(u)) was produced in the same manner as in Example 2, except that the solution of adhesive resin composition 3(a) was changed to the solution of adhesive composition 3(b).
  • Example 21 A dicing die-bonding film 20 (DDF(v)) was produced in the same manner as in Example 2, except that the solution of adhesive resin composition 3(a) was changed to the solution of adhesive composition 3(c).
  • Example 22 All except that the solution of the adhesive resin composition 3(a) was changed to the solution of the adhesive composition 3(d), and the thickness of the die-bonding film (adhesive layer) 3 after drying was changed to 20 ⁇ m.
  • a dicing die-bonding film 20 (DDF(w)) was produced in the same manner as in Example 2.
  • Example 23 A dicing die-bonding film 20 (DDF(x)) was produced in the same manner as in Example 3, except that the thickness of the die-bonding film (adhesive layer) 3 after drying was changed to 50 ⁇ m.
  • shear viscosity of die bond film (adhesive layer) 3 at 80 ° C was measured by the following method.
  • a laminate was prepared by laminating a plurality of die-bonding films (adhesive layer) 3 from which the release liner was removed at 70° C. so that the total thickness would be 200 to 210 ⁇ m.
  • the laminate was punched out in the thickness direction into a size of 10 mm ⁇ 10 mm to obtain a measurement sample. Subsequently, using a dynamic viscoelasticity apparatus ARES (manufactured by Rheometric Scientific F.E.
  • a circular aluminum plate jig with a diameter of 8 mm was mounted, and then a measurement sample was set.
  • the shear viscosity was measured while applying a strain of 5% to the measurement sample at 35°C and heating the measurement sample at a heating rate of 5°C/min to determine the value of the shear viscosity at 80°C.
  • Laser oscillator type Semiconductor laser excitation
  • Q-switched solid-state laser (2) Wavelength: 1342 nm (3)
  • the semiconductor wafer W with a thickness of 750 ⁇ m in which the modified region 30b is formed and held by the back grinding tape is ground and thinned.
  • a semiconductor wafer 30 having a thickness of 30 ⁇ m was obtained.
  • the semiconductor wafer 30 is cracked vertically from the modified region 30b formed on the dividing line on the backgrinding tape. It is divided into semiconductor chips 30a each having the same size.
  • the splitting property of the adhesive layer 3, which is one of the index items of the stealth dicing property was evaluated by carrying out a cool expansion process by the following method.
  • a plurality of semiconductor chips 30a having a thickness of 30 ⁇ m obtained by the above method were applied from the dicing die-bonding film 20 produced in each example and comparative example to the surface opposite to the side to which the back grind tape was attached.
  • a dicing die-bonding film 20 is applied to a plurality of semiconductor chips 30a using a laminating device (device name: DFM2800) manufactured by Disco Co., Ltd. so that the adhesive layer 3 exposed by peeling off the release liner adheres.
  • the dicing tape 10 was laminated at a lamination temperature of 70° C. and a lamination speed of 10 mm/sec.
  • the back grind tape was peeled off, and a plurality of semiconductor chips 30 a were transferred and fixed onto the die bond film 3 of the dicing die bond film 20 .
  • the dicing die-bonding film 20 is divided between the MD direction of the base film 1 and the vertical line direction of the grid-shaped division lines of the semiconductor wafer 30 (the TD direction of the base film 1 and the grid-shaped semiconductor wafer 30). It is attached to a plurality of semiconductor chips 30a, which are divided bodies of the semiconductor wafer 30, so that the horizontal line direction of the line to be divided coincides.
  • a laminate (semiconductor chips 30a/adhesive layer 3/adhesive layer 2/base film 1) including a plurality of semiconductor chips 30a held by the ring frame (wafer ring) 40 is expanded by DISCO Corporation. It was fixed to a device (device name: DDS2300 Fully Automatic Die Separator).
  • the adhesive layer 3 was cut by cool-expanding the dicing tape 10 (adhesive layer 2/base film 1) of the dicing die-bonding film 20 with the semiconductor wafer 30 under the following conditions.
  • a semiconductor chip 30a with a die bond film (adhesive layer) 3 was obtained.
  • the cool expansion process was carried out under the following conditions. The cool expansion step may be performed at .
  • the adhesive layer 3 after cool expansion is observed from the surface side of the semiconductor chip 30a using an optical microscope (type: VHX-1000) manufactured by Keyence Corporation at a magnification of 200 times to determine the side to be cut. Among them, the number of sides that were not cleaved was counted. Then, for each adhesive layer 3, from the total number of sides to be cut and the total number of uncut sides, the ratio of the number of cut sides to the total number of sides to be cut is calculated as a cutting rate (%). calculated as All the semiconductor chips 30a were observed with the optical microscope. The splittability of each adhesive layer 3 was evaluated according to the following criteria, and evaluation of B or higher was judged to be good splittability.
  • the dicing tape 10 was sucked by the suction table, and the suction table was lowered together with the work while the suction by the suction table was maintained. Then, a heat shrinking process was performed under the following conditions to heat shrink (heat shrink) the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding region.
  • the surface temperature of the heated portion of the dicing tape 10 was 80°C.
  • Hot air temperature 220°C
  • Air volume 40L/min
  • Distance between hot air outlet and dicing tape 10 20 mm
  • Stage rotation speed 7°/sec
  • the workpiece is removed from the expanding device, placed on a flat rubber mat, and the semiconductor chip 30a holding region of the dicing tape 10 after heat shrinking is removed.
  • the degree of elimination of slackness in the outer circumferential portion was visually confirmed under a three-wavelength fluorescent lamp.
  • Each dicing tape 10 was evaluated for the degree of elimination of slackness according to the following criteria, and an evaluation of B or higher was judged to have good heat shrinkability.
  • the expandability and heat shrinkability of the dicing tape 10 in the dicing die-bonding film 20 are evaluated according to the following criteria, and the evaluation of B or higher indicates that the expandability and heat shrinkability are good, that is, the kerf width at a level that hardly causes problems in the pick-up process. was determined to be secured.
  • Both the kerf width in the MD direction and the kerf width in the TD direction were 30 ⁇ m or more.
  • B The value of the kerf width in the MD direction is 30 ⁇ m or more and the value of the kerf width in the TD direction is 25 ⁇ m or more and less than 30 ⁇ m, or the value of the kerf width in the TD direction is 30 ⁇ m or more and the value of the kerf width in the MD direction is 25 ⁇ m or more and less than 30 ⁇ m.
  • both the kerf width in the MD direction and the kerf width in the TD direction are 25 ⁇ m or more and less than 30 ⁇ m.
  • C At least one of the kerf width in the MD direction and the kerf width in the TD direction was less than 25 ⁇ m.
  • the pressure-sensitive adhesive layer 2 was cured by irradiating ultraviolet rays (UV) having a central wavelength of 365 nm so that the integrated light amount was 150 mJ/cm at an irradiation intensity of 70 mW/cm, thereby obtaining a pick-up evaluation sample.
  • UV ultraviolet rays
  • a pick-up test was performed using a device (device name: die bonder DB-830P) having a pick-up mechanism manufactured by Fasford Technology Co., Ltd. (former Hitachi High-Technologies Corporation).
  • the size of the pick-up collet was 4.4 ⁇ 6.9 mm
  • the number of push-up pins was 12, and the pick-up conditions were as follows: push-up speed of the push-up pin was 10 mm/sec, and push-up height of the push-up pin was 100 ⁇ m. bottom.
  • the number of pick-up trie samples was 20 (chips) at a predetermined position, and the pick-up property of the dicing tape 10 on the dicing die-bonding film 20 was evaluated according to the following criteria. .
  • the dicing die bond films of Examples 1 to 23 (DDF (a) to DDF (j), DDF (l) to DDF (x)), after the adhesive layer is cut, fixes the semiconductor chip with the adhesive layer on the adhesive layer of the adhesive tape for wafer processing (dicing tape) while ensuring a sufficient kerf width.
  • the dicing die-bonding film using the adhesive tape for wafer processing of the present invention includes, as a base film, an ethylene/unsaturated carboxylic acid-based copolymer containing a specific content ratio of structural units derived from an unsaturated carboxylic acid.
  • the resin film is laminated with a resin layer containing an ionomer resin that is cross-linked with a specific concentration of zinc ions and has an appropriate Vicat softening temperature, it has moderate tensile stress and uniform extensibility at the time of expansion, and heat It also has shrinkability in the shrinking process, so that the adhesive layer can be divided satisfactorily by expansion, and slack generated in the tape during expansion can be removed by heat shrinkage. As a result, the kerf width between the semiconductor chips with the adhesive layers secured by the expansion is properly maintained, and damage due to contact between the chips and re-adhesion due to contact between the adhesive layers are less likely to occur. It was found that a semiconductor chip with an adhesive layer could be picked up satisfactorily.
  • the adhesive layer is as good as an ordinary general-purpose die-bonding film. It was found that the adhesive layer-attached semiconductor chip could be picked up satisfactorily.
  • the content ratio of the specific ionomer resin in each resin layer is 100% by mass, and the resin layer (first resin layer, The total thickness of the second resin layer and the third resin layer) was 100% of the total thickness of the base film.
  • the zinc (Zn 2+ ) ion concentration per 1 g of the ethylene/unsaturated carboxylic acid copolymer is in the range of 0.41 mmol or more and 0.60 mmol or less
  • the unsaturated ethylene/unsaturated carboxylic acid copolymer The dicing die-bonding films of Examples 12 and 13, in which the content ratio of the structural unit (isobutyl acrylate) derived from a carboxylic acid ester is as low as 1.5% by mass, is the ethylene/unsaturated carboxylic acid copolymer containing isobutyl acrylate. The result was slightly inferior to the dicing die films of Examples 2 to 8 and Example 15 in which the content ratio was 5% by mass or more.
  • the dicing die-bonding films of Example 2 and Examples 20-22 using die-bonding films having the same configuration of the dicing tape 10 and different shear viscosity characteristics at 80° C. and the thickness of the die-bonding film were changed to 30 ⁇ m of Example 3. From the evaluation results of the dicing die bond film of Example 23, which was thickened to 50 ⁇ m with respect to It was found that even when using , the splittability of the adhesive layer was generally good, the kerf width after heat shrinking was sufficiently secured, and the pick-up property was also good.
  • an ionomer resin (IO-2) is used as the resin composition for the first resin layer and the second resin layer, and an ionomer resin and a polyamide resin are mixed at a mass ratio of 90:1 as the resin composition for the third resin layer.
  • the dicing die-bonding film of Example 16 which has a base film having a two-resin three-layer structure using the resin (IO-2/PA) used in the resin (IO-2/PA), has a one-kind resin three-layer structure using only the ionomer resin (IO-2).
  • Example 2 It was found to be as excellent as the dicing die bond film of Example 2 having a base film of, but the ionomer resin (IO-2) was used as the resin composition for the first resin layer, and the resin for the second resin layer Example 17 having a base film having a two-layer two-layer structure using a resin (IO-2/TPO-1) obtained by mixing an ionomer resin and an olefinic thermoplastic elastomer resin at a mass ratio of 80:20 as a composition.
  • a resin (IO-2/TPO-1) obtained by mixing an ionomer resin and an olefinic thermoplastic elastomer resin at a mass ratio of 80:20 as a composition.
  • the dicing die-bonding film of No. 2 was of a practically acceptable level, the results were slightly inferior to those of the dicing die-bonding film of Example 2.
  • an ionomer resin (IO-2) is used as the resin composition for the first resin layer and the third resin layer
  • an olefinic thermoplastic elastomer resin (TPO-1) is used as the resin composition for the second resin layer.
  • the dicing die-bonding films (DDF(y) to DDF(dd)) of Comparative Examples 1 to 6 using wafer processing adhesive tapes that do not satisfy the requirements of the present invention are all It was confirmed that the results were inferior to those of the dicing die-bonding films of Examples 1 to 23 in terms of the tearability of the adhesive layer, the kerf width after heat shrinking, and the pick-up property.
  • IO-16 ionomer resin
  • Zn 2+ zinc (Zn 2+ ) ion concentration of less than 0.38 mmol per gram of ethylene/unsaturated carboxylic acid copolymer
  • the content ratio of the structural unit (methacrylic acid) derived from the unsaturated carboxylic acid in the ethylene/unsaturated carboxylic acid copolymer is less than 6.9% by mass, and 1 g of the ethylene/unsaturated carboxylic acid copolymer
  • the dicing die-bonding film of Comparative Example 2 which has a substrate film of a three-layer structure of a single resin using only an ionomer resin (IO-17) having a zinc (Zn 2+ ) ion concentration of less than 0.38 mmol per unit, is also a comparative example. Similar to the dicing die-bonding film of No. 1, the pick-up property was inferior to the dicing die-bonding films of Examples 1-15.
  • the content ratio of the structural unit (methacrylic acid) derived from the unsaturated carboxylic acid in the ethylene/unsaturated carboxylic acid copolymer exceeds 18.0% by mass, and the ethylene/unsaturated carboxylic acid copolymer per 1 g
  • the dicing die-bonding film of No. 3 was inferior in pick-up property to the dicing die-bonding films of Examples 1-15.
  • some blocking occurred on the winding core side of the raw fabric roll, so the evaluation was performed on the portion without blocking.
  • the content ratio of the structural unit (methacrylic acid) derived from the unsaturated carboxylic acid in the ethylene/unsaturated carboxylic acid copolymer is less than 6.9% by mass, and the ethylene/unsaturated carboxylic acid copolymer Comparison with a base film having a three-layer structure of a single resin using only an ionomer resin (IO-19) having a zinc (Zn 2+ ) ion concentration per 1 g of less than 0.38 mmol and a Vicat softening temperature exceeding 80 ° C.
  • IO-19 ionomer resin having a zinc (Zn 2+ ) ion concentration per 1 g of less than 0.38 mmol and a Vicat softening temperature exceeding 80 ° C.
  • the zinc (Zn 2+ ) ion concentration per 1 g of the ethylene/unsaturated carboxylic acid copolymer is 0.
  • the dicing die-bonding film of Comparative Example 6 which has a base film having a two-layer resin structure in which resin layers made of an ionomer resin (IO-16) of less than 38 mmol are laminated, , and the dicing die-bonding films of Examples 1 to 23 were inferior in pick-up properties.
  • Comparative Example 5 could not be evaluated as a dicing die-bonding film because the base film 1(y) could not be stably formed.
  • Semiconductor wafer left part 33... Semiconductor wafer right part, 34 ... the upper part of the semiconductor wafer, 35 ... semiconductor wafer lower part, 40... ring frame (wafer ring), 41 ... holder, 50... Adsorption collet, 60... push-up pin (needle), 70, 80... Semiconductor devices.

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  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
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WO2025205831A1 (ja) * 2024-03-28 2025-10-02 古河電気工業株式会社 半導体加工用テープ
WO2026058931A1 (ja) * 2024-09-13 2026-03-19 株式会社レゾナック フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法

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JP2012214526A (ja) * 2011-03-28 2012-11-08 Hitachi Chemical Co Ltd フィルム状接着剤、接着シート及び半導体装置
JP2017063210A (ja) * 2011-12-26 2017-03-30 三井・デュポンポリケミカル株式会社 レーザーダイシング用フィルム基材、レーザーダイシング用フィルム、及び電子部品の製造方法
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WO2025205831A1 (ja) * 2024-03-28 2025-10-02 古河電気工業株式会社 半導体加工用テープ
WO2026058931A1 (ja) * 2024-09-13 2026-03-19 株式会社レゾナック フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法

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