WO2023273423A1 - 显示基板及其制备方法、显示面板及显示装置 - Google Patents

显示基板及其制备方法、显示面板及显示装置 Download PDF

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Publication number
WO2023273423A1
WO2023273423A1 PCT/CN2022/081465 CN2022081465W WO2023273423A1 WO 2023273423 A1 WO2023273423 A1 WO 2023273423A1 CN 2022081465 W CN2022081465 W CN 2022081465W WO 2023273423 A1 WO2023273423 A1 WO 2023273423A1
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Prior art keywords
film layer
layer
film
layer group
group
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PCT/CN2022/081465
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English (en)
French (fr)
Inventor
孙力
吴仲远
徐攀
王红丽
马凯葓
施槐庭
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京东方科技集团股份有限公司
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Priority to US18/022,525 priority Critical patent/US20240040897A1/en
Priority to EP22831254.2A priority patent/EP4203644A4/en
Publication of WO2023273423A1 publication Critical patent/WO2023273423A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/221—Static displays, e.g. displaying permanent logos
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • Embodiments of the present disclosure relate to, but are not limited to, the field of display technology, and specifically relate to a display substrate and a manufacturing method thereof, a display panel, and a display device.
  • the film layer located between the anode and the cathode is formed by an evaporation process.
  • a metal mask is used to expose the area on the substrate that needs to be deposited.
  • a film layer with the same pattern as the mask opening can be formed on the substrate, and the corresponding film is deposited in the same position in sequence according to the film layer structure of the OLED device layer, finally forming a light-emitting OLED device stack structure, and forming a light-emitting area of a corresponding shape (which may be an equivalent pattern formed by arranging multiple OLED devices) on the substrate.
  • a light-emitting OLED device stack structure which may be an equivalent pattern formed by arranging multiple OLED devices
  • An embodiment of the present disclosure provides a display substrate, including: a driving circuit layer disposed on a base and a light-emitting structure layer disposed on a side of the driving circuit layer away from the base, the driving circuit layer includes a pixel driving circuit,
  • the light-emitting structure layer includes an OLED device connected to the pixel driving circuit, the OLED device includes an anode, a light-emitting functional layer, and a cathode stacked in sequence, and the light-emitting functional layer includes a plurality of stacked film layers;
  • the The light-emitting structure layer includes an anode layer, a first film layer group and a second film layer group stacked in sequence, the anode layer includes one or more anodes, and the first film layer group includes the light-emitting functional layer.
  • the second film layer group includes at least one film layer in the light-emitting functional layer and the cathode;
  • the orthographic projection of the second film layer group on the substrate includes the first The orthographic projection of the film layer group on the substrate, the overlapping part of all the film layers in the first film layer group is used as the first part of the first film layer group, and the first part of the first film layer group
  • the area of the orthographic projection of the part covered on the surface of the anode and in direct contact with the surface of the anode on the substrate is the light emitting area of the display substrate.
  • the orthographic projection area on the substrate where the first portion of the group overlaps is configured to be non-luminous; the distance between the edge of the first film layer group and the edge of the second film layer group is at a plurality of positions different.
  • Embodiments of the present disclosure further provide a display panel, including the display substrate described in any embodiment.
  • An embodiment of the present disclosure further provides a display device, including the display substrate described in any embodiment.
  • An embodiment of the present disclosure also provides a method for preparing a display substrate.
  • the display substrate includes an OLED device, and the OLED device includes an anode, a light-emitting functional layer, and a cathode stacked in sequence. film layer; the preparation method comprises:
  • the driving circuit layer including a pixel driving circuit
  • anode layer on a side of the driving circuit layer away from the substrate, the anode layer including one or more anodes;
  • first film layer group on the surface of the anode away from the substrate, the first film layer group including at least one film layer in the light-emitting functional layer;
  • the second film layer group including at least one film layer in the light-emitting functional layer and the cathode;
  • the orthographic projection of the second film layer group on the substrate includes the orthographic projection of the first film layer group on the substrate, and the overlapping parts of all the film layers in the first film layer group are used as The first part of the first film layer group, the orthographic projection area of the first part of the first film layer group that covers the surface of the anode and is in direct contact with the surface of the anode on the substrate is the The light-emitting area of the display substrate, the orthographic projection area of the part of the second film layer group that does not overlap with the first part of the first film layer group on the substrate is set to not emit light; the first film layer The distance between the edge of the group and the edge of the second film layer group varies at a plurality of locations.
  • FIG. 1 is a schematic structural view of substrates with light-emitting regions of different shapes
  • Fig. 2 is a schematic plan view of a display substrate of some exemplary embodiments
  • Fig. 3 is a schematic diagram of the cross-sectional structure of A-A in Fig. 2 in some exemplary embodiments;
  • Fig. 4a is a schematic plan view of a driving circuit layer and a spacer post formed on a substrate in some exemplary embodiments;
  • Figure 4b is a schematic diagram of the cross-sectional structure of A-A in Figure 4a in some exemplary embodiments
  • Figure 5a is a schematic plan view of the structure of the first film layer formed on the anode in some exemplary embodiments
  • Figure 5b is a schematic diagram of the cross-sectional structure of A-A in Figure 5a in some exemplary embodiments
  • Fig. 6 is a schematic plan view of a display substrate in other exemplary embodiments.
  • Fig. 7 is a schematic plan view of a display substrate in some other exemplary embodiments.
  • Fig. 8 is a schematic plan view of a display substrate in some other exemplary embodiments.
  • FIG. 2 is a schematic plan view of a display substrate in some exemplary embodiments, and FIG. The schematic diagram of the cross-sectional structure of A-A in FIG.
  • the display substrate includes: a driving circuit layer 102 disposed on a substrate 101 and a light emitting structure layer 103 disposed on a side of the driving circuit layer 102 away from the substrate 101 , the driving circuit layer 102 includes a pixel driving circuit, the light-emitting structure layer 103 includes an OLED device connected to the pixel driving circuit, and the OLED device includes an anode 301, a light-emitting functional layer and a cathode 307 stacked in sequence, so
  • the light-emitting functional layer includes a plurality of stacked film layers; the light-emitting structure layer 103 includes an anode layer, a first film layer group 51 and a second film layer group 52 stacked in sequence, and the anode layer includes one or more
  • the anode 301, the first film layer group 51 includes at least one film layer in the light-emitting functional layer, and the second film layer group 52 includes at least one film layer in the light-emitting functional layer and the cathode 307:
  • the light emitting area of the display substrate may be understood as the display area of the display substrate, and the shape of the light emitting area may be understood as the shape of the display area of the display substrate.
  • the light-emitting area of the display substrate is roughly the remaining area after the area surrounded by the dotted line in the middle is removed from the dotted ellipse area.
  • the shape of the first part of the first film layer group 51 can be set to any desired shape
  • the edge contour shape of the first film layer group 51 can be a regular shape or an irregular shape
  • the edge profile shape of 52 may be a regular shape.
  • the light-emitting structure layer 103 includes an anode layer, a first film layer group 51 and a second film layer group 52 stacked in sequence, the anode layer includes one or more anodes 301, and the first film layer group 51 Including at least one film layer located between the anode 301 and the cathode 307 in the OLED device, the second film layer group 52 includes the cathode 307, and at least one film layer located between the anode 301 and the cathode 307 in the OLED device, the second film layer
  • the orthographic projection of the group 52 on the substrate 101 includes the orthographic projection of the first film layer group 51 on the substrate 101, the overlapping part of all the film layers in the first film layer group 51 is used as the first part of the first film layer group 51, the first film layer group 51 Orthographic projection of the part of the first part of a film layer group 51 covered on the surface of the anode 301 (herein, the surface of the anode 301 refers
  • the shape of the first part of the film layer group 51 defines the shape of the light emitting region of the display substrate.
  • the irregular patterns of the second film layer group 52 need not be prepared into corresponding irregular patterns, reducing the difficulty of preparing the second film layer group 52.
  • the first film layer group 51 The material of the film layer can be selected from a material that can be prepared by a film-forming process other than the evaporation process, so as to realize the preparation of a film layer pattern that is not easily formed by the evaporation process, which can reduce the difficulty of preparing the light-emitting structure layer 103, and more conveniently form only Light-emitting area pattern that is difficult to form by evaporation process.
  • the light-emitting functional layer includes a light-emitting layer, and any one or more of the following film layers: hole injection layer, hole transport layer, electron blocking layer, hole blocking layer, electron Transport layer, electron injection layer.
  • the light-emitting functional layer may include a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer and electron injection layer.
  • the film layers of the first film layer group and the remaining film layers in the second film layer group except the cathode are sequentially arranged according to the stacking order of the film layers involved in the light-emitting functional layer in this embodiment.
  • the first film layer group or the second film layer group includes the light emitting layer.
  • the first film layer group may include any one or more of the hole injection layer, the hole transport layer and the electron blocking layer.
  • the second film layer group may include any one or more of the hole blocking layer, the electron transport layer and the electron injection layer.
  • the first film layer group may include the light-emitting layer, and may also include any of the hole injection layer, the hole transport layer, the electron blocking layer, the hole blocking layer, and the electron transport layer. one or more.
  • the second film layer group may include the electron injection layer and the cathode.
  • the first film layer group 51 may include a hole injection layer 303, a hole transport layer 304 and The light emitting layer 305
  • the second film layer group 52 may include an electron injection layer 306 and a cathode 307 stacked in sequence along a direction away from the light emitting layer 305 .
  • Figure 3 shows three anodes, the surface of the anode 301 on the left is not provided with the first film group 51, and the second film group 52 directly covers the surface of the anode 301 on the left, so the area where the anode 301 is located on the left is not Luminescence; the anode 301 in the middle and the anode 301 on the right are covered successively by all the film layers of the first film layer group 51 and all the film layers of the second film layer group 52, then the anode 301 in the middle and the anode 301 in the right side are located Can shine.
  • the film layer structure of the first film layer group 51 and the second film layer group 52 can be designed in advance, and the OLED device in the light emitting structure layer 103 can be set to lack the first film layer group 51 and the second film layer Any one or more layers in group 52 do not emit light.
  • the first film layer group may include a hole injection layer, a hole transport layer, an electron blocking layer and a light emitting layer stacked in sequence along a direction away from the anode;
  • the second film The layer group may include a hole blocking layer, an electron transport layer, an electron injection layer and a cathode stacked in sequence along a direction away from the light emitting layer.
  • the thickness of the first film layer group may be 10 nm to 300 nm.
  • the first film layer group may include a hole injection layer, a hole transport layer and a light-emitting layer stacked in sequence along a direction away from the anode, wherein the hole injection layer, the hole transport layer and the light-emitting layer
  • the total thickness of the layers may be from 10 nm to 300 nm.
  • the light-emitting structure layer may include a plurality of OLED devices that emit light of multiple colors (for example, may include red, green and blue), and the light-emitting region may realize a color screen display; or,
  • the light-emitting structure layer may include an OLED device emitting light of a predetermined color, and the light-emitting region may emit light of a predetermined color.
  • the first film layer group may include two or more film layers, and the orthographic projection of any two film layers in the first film layer group on the substrate An orthographic projection on the substrate comprising the same number and position of the anodes.
  • the orthographic projection areas of any two film layers in the first film layer group on the substrate are approximately the same, and the planar shape of the first film layer group is approximately the same as that of the light emitting area of the display substrate.
  • a part of the part of the second film layer group 52 that does not overlap with the first film layer group 51 covers the surface of the anode 301 .
  • the first film layer group 51 or the second film layer group 52 includes the light emitting layer.
  • the second film layer group 52 includes the light-emitting layer, and a part of the second film layer group 52 may directly cover the surface of the anode 301, such as in the example of FIG.
  • the second A part of the second film layer group 52 directly covers the surfaces of the 16 anodes 301 in the area enclosed by the dotted line inside the dotted ellipse, but the part of the second film layer group 52 directly covering the surface of the anode 301 is on the substrate 101
  • the orthographic area of the can be set to not emit light.
  • the membrane surfaces of the first membrane layer group are continuous or discontinuous.
  • the first part of the first film layer group may be an integral structure, or the first part of the first film layer group may include a plurality of independent and unconnected sub-regions.
  • the formed light-emitting region can be understood as a continuous light-emitting region; if the film surface of the first film layer group is discontinuous, the formed The light emitting region can be understood as including a plurality of discontinuous sub-light emitting regions.
  • the film surface of the first film layer group 51 is continuous, and the light-emitting area of the display substrate is roughly the remaining area after the dotted ellipse area is removed from the area surrounded by the dotted line in the middle.
  • the shape of the light-emitting region is substantially the same as the planar shape of the first film layer group 51 .
  • the film surface of the first film layer group 51 is continuous, and the light-emitting area of the display substrate is roughly an inverted V-shaped area surrounded by dotted lines, and the shape of the light-emitting area is the same as
  • the plane shapes of the first film layer groups 51 are substantially the same.
  • the film surface 51 of the first film layer group is discontinuous.
  • the planar shape of the first film layer group 51 is two circular rings, and the light emitting area The shape of is roughly the same as the planar shape of the first film layer group, and the light-emitting area of the display substrate is roughly two ring-shaped areas surrounded by dotted lines.
  • the edge of the first film layer group 51 may be the edge of the light emitting area of the display substrate.
  • the light-emitting structure layer may include an OLED device
  • the first film layer group 51 may be formed on the surface of the anode 301
  • the orthographic projection of the anode 301 on the substrate 101 may include a second
  • the orthographic projection of a film layer group 51 on the substrate 101 and the orthographic projection of the second film layer group 52 on the substrate 101 may include the orthographic projection of the anode 301 on the substrate 101 .
  • the film surface of the first film layer group 51 is continuous and ring-shaped
  • the light-emitting area of the display substrate is the area where the first film layer group 51 is located
  • the light-emitting area of the display substrate is ring-shaped.
  • the film layers of the first film layer group can be formed by any one or more processes of inkjet printing, spray coating, in-situ growth, exposure and development, and laser ablation. In terms of evaporation process, it is easier to realize the preparation of film layers with various patterns, and the film layer size is easier to control.
  • the film layer material of the first film layer group may be an organic material, such as small aromatic organic molecules, metal-organic complexes, conjugated polymer materials, etc.; or, the first film layer group
  • the film layer material of a film layer group can be inorganic material, for example, amorphous metal oxide, sulfide or inorganic nano-particles and the like.
  • any one of the film layers of the second film layer group may be of an integrated structure.
  • the preparation process of the film layer of the second film layer group is not limited, for example, it can be prepared by a process with a solid-gas phase transition process such as evaporation or chemical vapor deposition.
  • the materials of the film layers other than the cathode in the second film layer group may be organic materials or inorganic materials, for example, may include metal oxides, halides or metals.
  • the film layer shape of the second film layer group may not be limited, and the film layer shape of the second film layer group may not be related to the film layer shape of the first film layer group.
  • the second film layer group can completely cover the first film layer group, and the minimum distance by which the edge of the second film layer group exceeds the edge of the first film layer group can be greater than the film formation of the film layer of the second film layer group 2 times the position accuracy value of the craft.
  • the pixel driving circuit of the driving circuit layer may adopt an active matrix (AM) driving method, and the pixel driving circuit may include a plurality of thin film transistors and storage capacitors, as shown in FIG. 3 A driving transistor 201 and a storage capacitor 202 are schematically shown, and each pixel driving circuit drives a corresponding OLED device to emit light.
  • the pixel driving circuit of the driving circuit layer may adopt a passive matrix (PM) driving method.
  • the driving circuit layer 102 may include: a first insulating layer disposed on the substrate 101; an active layer disposed on the first insulating layer; a second insulating layer covering the active layer; disposed on the second insulating layer The gate electrode and the first capacitance electrode on the top; the third insulating layer covering the gate electrode and the first capacitance electrode; the second capacitance electrode arranged on the third insulation layer; the fourth insulation layer covering the second capacitance electrode, the second The insulating layer, the third insulating layer and the fourth insulating layer are provided with via holes, and the via holes expose the active layer; the source electrode and the drain electrode arranged on the fourth insulating layer, the source electrode and the drain electrode respectively pass through The two via holes of the fourth insulating layer, the third insulating layer and the second insulating layer are connected to the active layer; the flat layer covering the aforementioned structure is provided with a via hole, and the drain electrode is exposed through the via hole.
  • the light emitting structure layer 103 may further include a pixel definition layer 302 disposed on the side of the anode layer away from the substrate 101, the pixel definition layer 302 is provided with a pixel opening,
  • the pixel definition layer 302 covers the part of the surface of the anode 301 close to the peripheral edge, the pixel opening exposes the rest of the surface of the anode 301, and the part of the surface of the anode 301 exposed by the pixel opening is stacked with the first film layer group 51 and the second film layer group in sequence.
  • Two film layer groups 52 to form an OLED device may also include other film layers, such as spacer pillars disposed on the pixel definition layer 302 .
  • the pixel definition layer 302 may include a plurality of first partitions extending along the first direction and a plurality of second partitions extending along the second direction, the plurality of first partitions and the plurality of second partitions intersect each other to define a plurality of pixel openings, the pixel openings expose the surface of the anode 301; the thickness of the first partition may be greater than the thickness of the second partition, The first film layer group 51 may be separated by the first partition. The first film layer group 51 may not be separated by the second partition. The width of the first partition in the second direction may be greater than or equal to 10 micrometers. The width of the second partition in the first direction may be greater than or equal to 20 micrometers.
  • the pixel definition layer 302 can be formed by a one-step or two-step exposure and development process.
  • the first part of the first film layer group has at least a first film thickness and a second film thickness, and the first film thickness is greater than the second film thickness; the first film layer The part of the first part of the group that covers the second separator has the first film thickness, and the part of the first part of the first film group that covers the surface of the anode and is in direct contact with the surface of the anode The portion has the second film thickness.
  • the anode is connected to the drain electrode of a thin film transistor in the driving circuit layer through the anode via hole provided in the driving circuit layer, and the orthographic projection of the second partition on the substrate may include the anode via
  • a pit may be formed on the surface of the part of the second partition corresponding to the position of the anode via hole away from the substrate, and the first part of the first film layer group is connected to the pit
  • the thickness of the part corresponding to the position is the first film thickness
  • the thickness of the part of the first part of the first film layer group covering the surface of the anode and directly contacting the surface of the anode is the second film thickness .
  • the film layers of the first film layer group can be formed by using an inkjet printing process.
  • the display substrate may further include an encapsulation structure layer 104 disposed on the side of the light-emitting structure layer 103 away from the substrate 101.
  • the encapsulation structure layer 104 may include first encapsulation layers stacked in sequence.
  • layer 401, the second encapsulation layer 402 and the third encapsulation layer 403, the first encapsulation layer 401 and the third encapsulation layer 403 can be made of inorganic materials, and the second encapsulation layer 402 can be made of organic materials.
  • the display substrate may also include other film layers disposed on the side of the encapsulation structure layer 104 away from the substrate, for example, may include a touch structure layer, a light extraction layer, and the like.
  • a layer includes multiple film layers stacked on top of each other.
  • the preparation process of the display substrate may include the following operations:
  • a driving circuit layer 102 is formed on a substrate 101, and the driving circuit layer 102 includes a pixel driving circuit.
  • the preparation process of the driving circuit layer 102 may include:
  • a first insulating film and an active layer film are sequentially deposited on the substrate 101, and the active layer film is patterned by a patterning process to form a first insulating layer covering the substrate 101 and an active layer pattern disposed on the first insulating layer , the active layer pattern includes at least the active layer of each sub-pixel.
  • a second insulating film and a first metal film are deposited in sequence, and the first metal film is patterned by a patterning process to form a second insulating layer covering the pattern of the active layer, and a first gate metal layer disposed on the second insulating layer
  • the layer pattern, the first gate metal layer pattern at least includes the gate electrode and the first capacitor electrode of each sub-pixel.
  • a third insulating film and a second metal film are deposited in sequence, and the second metal film is patterned by a patterning process to form a third insulating layer covering the first gate metal layer, and a second gate electrode disposed on the third insulating layer.
  • the metal layer pattern, the second gate metal layer pattern at least includes the second capacitance electrode of each sub-pixel, and the position of the second capacitance electrode corresponds to the position of the first capacitance electrode.
  • the first capacitor electrode and the second capacitor electrode form a storage capacitor 202 .
  • a fourth insulating film is deposited, and the fourth insulating film is patterned by a patterning process to form a fourth insulating layer pattern covering the second gate metal layer, and at least two via holes are opened on the fourth insulating layer of each sub-pixel, The fourth insulating layer, the third insulating layer and the second insulating layer in the two via holes are etched away, exposing the surface of the active layer of each sub-pixel.
  • the third metal film is deposited, and the third metal film is patterned by a patterning process, and a source-drain metal layer pattern is formed on the fourth insulating layer.
  • the source-drain metal layer includes at least the source electrode and the drain electrode of each sub-pixel, and the source electrode The drain electrode and the drain electrode are respectively connected to the active layer through two via holes passing through the fourth insulating layer, the third insulating layer and the second insulating layer.
  • a flat thin film of organic material is coated on the substrate 101 on which the aforementioned pattern is formed, and a via hole is formed on the flat thin film of each sub-pixel through processes such as masking, exposure, and development, and the flat thin film in the via hole is developed. , exposing the surface of the drain electrode, thereby forming a planarization layer (PLN) covering the substrate 101 .
  • PPN planarization layer
  • the driving circuit layer 102 is prepared on the substrate 101, as shown in FIG. 4b.
  • the active layer, the gate electrode, the source electrode and the drain electrode form the driving transistor 201 of the pixel driving circuit
  • the first capacitor electrode and the second capacitor electrode form the storage capacitor 202 of the pixel driving circuit.
  • the pixel driving circuit may use an active matrix driving method to drive the OLED device of each sub-pixel.
  • any one of silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON) can be used for the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer or multiple, can be a single layer, multi-layer or composite layer.
  • the first insulating layer may be called a buffer (Buffer) layer, which is used to improve the water and oxygen resistance of the substrate 101
  • the second insulating layer and the third insulating layer may be called a gate insulating (GI) layer
  • the fourth insulating layer may be called a Interlayer insulation (ILD) layer.
  • the first metal film, the second metal film and the third metal film can adopt metal materials, such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo) any one or Multiple, or alloy materials of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), can be single-layer structure or multi-layer composite structure, such as Ti/Al/Ti and the like.
  • metal materials such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo) any one or Multiple, or alloy materials of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb)
  • AlNd aluminum neodymium alloy
  • MoNb molybdenum niobium alloy
  • the active layer film can be made of amorphous indium gallium zinc oxide (a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO), amorphous silicon (a-Si), polycrystalline silicon (p-Si) , Hexathiophene, polythiophene and other materials.
  • a-IGZO amorphous indium gallium zinc oxide
  • ZnON zinc oxynitride
  • IZTO indium zinc tin oxide
  • a-Si amorphous silicon
  • p-Si polycrystalline silicon
  • Hexathiophene polythiophene and other materials.
  • An anode layer is formed on the side of the driving circuit layer 102 away from the substrate 101, and the anode layer includes one or more anodes 301, as shown in FIG. 4b.
  • an anode film is deposited on the substrate 101 forming the aforementioned pattern, and the anode film is patterned by a patterning process to form an anode layer including a plurality of anodes 301, the anodes 301 are formed on the flat layer of the driving circuit layer 102, and passed The via hole on the flat layer is connected to the drain electrode of the driving transistor 201 .
  • pixel definition layer 302 and spacer posts Forming the pixel definition layer 302 and spacer posts, as shown in Figure 4b, coating the pixel definition film on the substrate 101 with the aforementioned pattern formed, and forming a pixel definition layer with pixel openings through processes such as masking, exposure, and development 302, wherein the pixel definition film in the pixel opening is developed to expose the corresponding surface of the anode 301, and the pixel definition layer 302 covers the part of the surface of the anode 301 near the peripheral edge, as shown in FIG. 4a.
  • the material of the pixel definition layer 302 can be polyimide, acrylic or polyethylene terephthalate.
  • spacer posts may be formed on the pixel definition layer 302 .
  • the first film layer group 51 includes at least one film layer in the light-emitting functional layer, as shown in Figure 5a and Figure 5b
  • a hole injection layer 303, a hole transport layer 304 and a light emitting layer 305 are sequentially formed on the surface of the anode 301 in the set area, wherein the hole injection layer 303, the hole transport layer 304 and the light emitting layer 305 As the first film layer group 51 .
  • the hole injection layer 303 , the hole transport layer 304 and the light emitting layer 305 can be formed by any one or more processes of inkjet printing, spray coating, in-situ growth, exposure and development, and laser ablation.
  • the second film layer group 52 includes at least one film layer in the light-emitting functional layer and the Cathode 307, as shown in Figure 2 and Figure 3, forms electron injection layer 306 and cathode 307 successively on the surface of first membrane layer group 51, and electron injection layer 306 and cathode 307 are as the second membrane layer group 52, electron injection layer 306 and The cathode 307 completely covers the first film layer group 51 .
  • the electron injection layer 306 and the cathode 307 can both have an integral structure, and the electron injection layer 306 and the cathode 307 can be formed by processes such as evaporation process or chemical vapor deposition process. This example does not limit the preparation process of the electron injection layer 306 and the cathode 307 . So far, the preparation of the light emitting structure layer 103 is completed.
  • the orthographic projection of the second film layer group 52 on the substrate 101 includes the orthographic projection of the first film layer group 51 on the substrate 101, that is, the second film layer group 52 combines the first film layer
  • the group 51 is completely covered, and the overlapping part of all the film layers in the first film layer group 51 is used as the first part of the first film layer group 51, and the coverage of the first part of the first film layer group 51 is in the
  • the orthographic projection area of the surface of the anode 301 on the substrate 101 is the light-emitting area of the display substrate, and the part of the second film layer group 52 that does not overlap with the first part of the first film layer group 51
  • the orthographic projection area on the substrate 101 is set not to emit light. As shown in FIG.
  • three anodes 301 are exemplarily shown. Since the first film layer group 51 is not formed on the surface of the left anode 301, the second film layer group 52 directly covers the surface of the left anode 301. Then the area where the anode 301 on the left side does not emit light, the surface of the first film layer group 51 of the middle anode 301 and the right side anode 301 is covered with the second film layer group 52, then the middle anode 301 and the right side anode 301 are located The area glows.
  • the second encapsulation layer 402 and the third encapsulation layer 403 Form an encapsulation structure layer 104 on the surface of the light emitting structure layer 103 away from the substrate 101, as shown in FIG. 401, the second encapsulation layer 402 and the third encapsulation layer 403, the first encapsulation layer 401 and the third encapsulation layer 403 can use inorganic materials, the second encapsulation layer 402 can use organic materials, the first encapsulation layer 401 and the third encapsulation layer 403 completely wraps the second encapsulation layer 402 , thus effectively preventing water and oxygen from intruding into the light emitting structure layer 103 .
  • an embodiment of the present disclosure also provides a method for preparing a display substrate, the display substrate includes an OLED device, and the OLED device includes an anode, a light-emitting functional layer, and a cathode stacked in sequence, and the light-emitting functional layer includes A plurality of film layers stacked; the preparation method includes:
  • the driving circuit layer including a pixel driving circuit
  • anode layer on a side of the driving circuit layer away from the substrate, the anode layer including one or more anodes;
  • first film layer group on the surface of the anode away from the substrate, the first film layer group including at least one film layer in the light-emitting functional layer;
  • the second film layer group including at least one film layer in the light-emitting functional layer and the cathode;
  • the orthographic projection of the second film layer group on the substrate includes the orthographic projection of the first film layer group on the substrate, and the overlapping parts of all the film layers in the first film layer group are used as The first part of the first film layer group, the orthographic projection area of the first part of the first film layer group that covers the surface of the anode and is in direct contact with the surface of the anode on the substrate is the The light-emitting area of the display substrate, the orthographic projection area of the part of the second film layer group that does not overlap with the first part of the first film layer group on the substrate is set to not emit light; the first film layer The distance between the edge of the group and the edge of the second film layer group varies at a plurality of locations.
  • the film layers of the first film layer group are formed by any one or more processes of inkjet printing, spray coating, in-situ growth, exposure and development, and laser ablation.
  • any one film layer of the second film layer group has an integrated structure, and the film layers of the second film layer group are formed by an evaporation process or a chemical vapor deposition process.
  • An embodiment of the present disclosure further provides a display panel, including the display substrate described in any one of the foregoing embodiments.
  • the display panel may further include a polarizer and a cover plate sequentially stacked on a side of the encapsulation structure layer of the display substrate away from the base.
  • the display panel may further include a touch structure layer disposed between the encapsulation structure layer and the polarizer.
  • An embodiment of the present disclosure further provides a display device, comprising the display substrate described in any one of the foregoing embodiments.
  • the display device can be any product or component with a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.
  • parallel refers to a state where the angle formed by two straight lines is -10° or more and 10° or less, and thus includes a state where the angle is -5° or more and 5° or less.
  • perpendicular refers to a state where the angle formed by two straight lines is 80° to 100°, and thus includes an angle of 85° to 95°.
  • connection means a fixed connection, or a detachable connection, or an integral
  • installation means a fixed connection, or a detachable connection, or an integral
  • connection may be directly connected, indirectly connected through an intermediary, or internally connected between two components.

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Abstract

本公开实施例提供一种显示基板及其制备方法、显示面板及显示装置，显示基板包括设置在基底上的发光结构层，发光结构层包括依次叠设的阳极层、第一膜层组和第二膜层组，阳极层包括一个或多个阳极，第一膜层组包括OLED器件中位于阳极和阴极之间的至少一个膜层，第二膜层组包括阴极，以及OLED器件中位于阳极和阴极之间的至少一个膜层；第二膜层组在基底上的正投影包含第一膜层组在基底上的正投影，第一膜层组中所有膜层的交叠部分作为第一膜层组的第一部分，第一膜层组的第一部分的覆盖在阳极表面且与阳极表面直接接触的部分在基底上的正投影区域为显示基板的发光区域，第一膜层组的边缘与第二膜层组的边缘之间的距离在多个位置处不同。

Description

显示基板及其制备方法、显示面板及显示装置
本申请要求于2021年6月30日提交中国专利局、申请号为202110736015.4、发明名称为“一种显示基板及其制备方法、显示面板及显示装置”的中国专利申请的优先权，其内容应理解为通过引用的方式并入本申请中。
技术领域
本公开实施例涉及但不限于显示技术领域，具体涉及一种显示基板及其制备方法、显示面板及显示装置。
背景技术
一些有机电致发光二极管(OLED)显示装置的发光结构层中，位于阳极和阴极之间的膜层采用蒸镀工艺形成，在蒸镀过程中使用金属遮罩把基板上需要沉积材料的区域暴露在蒸镀材料蒸汽中，并遮住不需要沉积蒸镀材料的区域，如此可以在基板上形成图案与遮罩开口相同的膜层，按照OLED器件的膜层结构依次在相同的位置沉积相应膜层，最终形成可发光的OLED器件叠层结构，以及在基板上形成相应形状(可以是多个OLED器件排布形成的等效图形)的发光区域。但是，如图1所示，对于基板1’上某些形状的发光区域2’而言，如边缘形状复杂、曲率变化大、无任何对称性，以及舌形、环形等类似形状，制作相应形状的金属遮罩的难度大，存在金属遮罩的开口易形变、尺寸不易精确控制、不能一次成形等问题，因此，不易实现平面尺寸准确控制的膜层形状。
发明内容
本公开实施例提供一种显示基板，包括：设置在基底上的驱动电路层和设于所述驱动电路层的远离所述基底一侧的发光结构层，所述驱动电路层包括像素驱动电路，所述发光结构层包括与所述像素驱动电路连接的OLED器件，所述OLED器件包括依次叠设的阳极、发光功能层和阴极，所述发光功能层包括叠设的多个膜层；所述发光结构层包括依次叠设的阳极层、第一膜 层组和第二膜层组，所述阳极层包括一个或多个所述阳极，所述第一膜层组包括所述发光功能层中的至少一个膜层，所述第二膜层组包括所述发光功能层中的至少一个膜层和所述阴极；所述第二膜层组在所述基底上的正投影包含所述第一膜层组在所述基底上的正投影，所述第一膜层组中所有膜层的交叠部分作为所述第一膜层组的第一部分，所述第一膜层组的第一部分的覆盖在所述阳极表面且与所述阳极表面直接接触的部分在所述基底上的正投影区域为所述显示基板的发光区域，所述第二膜层组的未与所述第一膜层组的第一部分交叠的部分在所述基底上的正投影区域设置为不发光；所述第一膜层组的边缘与所述第二膜层组的边缘之间的距离在多个位置处不同。
本公开实施例还提供一种显示面板，包括任一实施例所述的显示基板。
本公开实施例还提供一种显示装置，包括任一实施例所述的显示基板。
本公开实施例还提供一种显示基板的制备方法，所述显示基板包括OLED器件，所述OLED器件包括依次叠设的阳极、发光功能层和阴极，所述发光功能层包括叠设的多个膜层；所述制备方法包括：
在基底上形成驱动电路层，所述驱动电路层包括像素驱动电路；
在所述驱动电路层的远离所述基底一侧形成阳极层，所述阳极层包括一个或多个所述阳极；
在所述阳极的背离所述基底的表面形成第一膜层组，所述第一膜层组包括所述发光功能层中的至少一个膜层；
在所述第一膜层组的背离所述基底的表面形成第二膜层组，所述第二膜层组包括所述发光功能层中的至少一个膜层和所述阴极；
其中，所述第二膜层组在所述基底上的正投影包含所述第一膜层组在所述基底上的正投影，所述第一膜层组中所有膜层的交叠部分作为所述第一膜层组的第一部分，所述第一膜层组的第一部分的覆盖在所述阳极表面且与所述阳极表面直接接触的部分在所述基底上的正投影区域为所述显示基板的发光区域，所述第二膜层组的未与所述第一膜层组的第一部分交叠的部分在所述基底上的正投影区域设置为不发光；所述第一膜层组的边缘与所述第二膜层组的边缘之间的距离在多个位置处不同。
附图说明
附图用来提供对本公开技术方案的进一步理解，并且构成说明书的一部分，与本公开的实施例一起用于解释本公开的技术方案，并不构成对本公开技术方案的限制。附图中部件的形状和大小不反映真实比例，目的只是示意说明本公开内容。
图1为一些不同形状的发光区域的基板的结构示意图；
图2为一些示例性实施例的显示基板的平面结构示意图；
图3为在一些示例性实施例中图2中的A-A剖面结构示意图；
图4a为在一些示例性实施例中在基底上形成驱动电路层和隔垫柱后的平面结构示意图；
图4b为在一些示例性实施例中图4a中的A-A剖面结构示意图；
图5a为在一些示例性实施例中在阳极上形成第一膜层组后的平面结构示意图；
图5b为在一些示例性实施例中图5a中的A-A剖面结构示意图；
图6为另一些示例性实施例的显示基板的平面结构示意图；
图7为又一些示例性实施例的显示基板的平面结构示意图；
图8为又一些示例性实施例的显示基板的平面结构示意图。
具体实施方式
本领域的普通技术人员应当理解，可以对本公开实施例的技术方案进行修改或者等同替换，而不脱离本公开实施例技术方案的精神和范围，均应涵盖在本公开的权利要求范围当中。
本公开实施例提供一种显示基板，在一些示例性实施例中，如图2和图3所示，图2为一些示例性实施例的显示基板的平面结构示意图，图3为在一些示例性实施例中图2中的A-A剖面结构示意图，所述显示基板包括：设置在基底101上的驱动电路层102和设于所述驱动电路层102的远离所述基底101一侧的发光结构层103，所述驱动电路层102包括像素驱动电路，所述发光结构层103包括与所述像素驱动电路连接的OLED器件，所述OLED 器件包括依次叠设的阳极301、发光功能层和阴极307，所述发光功能层包括叠设的多个膜层；所述发光结构层103包括依次叠设的阳极层、第一膜层组51和第二膜层组52，所述阳极层包括一个或多个所述阳极301，所述第一膜层组51包括所述发光功能层中的至少一个膜层，所述第二膜层组52包括所述发光功能层中的至少一个膜层和所述阴极307；所述第二膜层组52在所述基底101上的正投影包含所述第一膜层组51在所述基底101上的正投影，所述第一膜层组51中所有膜层的交叠部分作为所述第一膜层组51的第一部分，所述第一膜层组51的第一部分的覆盖在所述阳极301表面且与所述阳极301表面直接接触的部分在所述基底101上的正投影区域为所述显示基板的发光区域，所述第二膜层组52的未与所述第一膜层组51的第一部分交叠的部分在所述基底101上的正投影区域设置为不发光；所述第一膜层组51的边缘与所述第二膜层组52的边缘之间的距离在多个位置处不同。
本公开实施例中，显示基板的发光区域可理解为显示基板的显示区域，发光区域的形状可理解为显示基板的显示区域的形状。图2的示例中，显示基板的发光区域大致为虚线椭圆区域除去中间位置的虚线所围成的区域后剩下的区域。本公开实施例中，第一膜层组51的第一部分的形状可以设置成任意所期望的形状，第一膜层组51的边缘轮廓形状可以是规则形状或不规则形状，第二膜层组52的边缘轮廓形状可以是规则形状。
本公开实施例的显示基板，发光结构层103包括依次叠设的阳极层、第一膜层组51和第二膜层组52，阳极层包括一个或多个阳极301，第一膜层组51包括OLED器件中位于阳极301和阴极307之间的至少一个膜层，第二膜层组52包括阴极307，以及OLED器件中位于阳极301和阴极307之间的至少一个膜层，第二膜层组52在基底101上的正投影包含第一膜层组51在基底101上的正投影，第一膜层组51中所有膜层的交叠部分作为第一膜层组51的第一部分，第一膜层组51的第一部分的覆盖在阳极301表面(本文中，阳极301表面是指阳极301的背离所述基底101的表面)且与阳极301表面直接接触的部分在基底101上的正投影区域为显示基板的发光区域，第二膜层组52的未与第一膜层组51的第一部分交叠的部分在基底101上的正投影区域设置为不发光，如此，可以通过限定第一膜层组51的第一部分的形状来 限定显示基板的发光区域的形状，当显示基板的发光区域的形状为不规则图形时，只需将第一膜层组51的第一部分的形状制备成相应的不规则图形即可，从而不需要将第二膜层组52的膜层的形状制备成相应的不规则图形，降低第二膜层组52的制备难度，此外，第一膜层组51的膜层材料可以选择能采用蒸镀工艺以外的成膜工艺制备膜层的材料，实现蒸镀工艺不易形成的膜层图案的制备，这样可降低发光结构层103的制备难度，较为方便地形成仅靠蒸镀工艺难以形成的发光区域图形。
在一些示例性实施例中，所述发光功能层包括发光层，以及下述膜层中的任意一个或多个：空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层、电子注入层。
本实施例的一个示例中，所述发光功能层可以包括沿远离所述阳极的方向依次叠设的空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层和电子注入层。本公开实施例中，第一膜层组的膜层和第二膜层组中除阴极之外的其余膜层按照本实施例中发光功能层中所涉及膜层的叠设顺序依次设置。
在一些示例性实施例中，所述第一膜层组或所述第二膜层组包括所述发光层。
在一些示例性实施例中，所述第一膜层组可以包括所述空穴注入层、所述空穴传输层和所述电子阻挡层中的任意一个或多个。
在一些示例性实施例中，所述第二膜层组可以包括所述空穴阻挡层、所述电子传输层和所述电子注入层中的任意一个或多个。
在一些示例性实施例中，所述第一膜层组可以包括所述发光层，还可以包括空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层中的任意一个或多个。本实施例的一个示例中，所述第二膜层组可以包括所述电子注入层和所述阴极。
示例性地，如图3所示，发光结构层103中，所述第一膜层组51可以包括沿远离所述阳极301的方向依次叠设的空穴注入层303、空穴传输层304和发光层305，所述第二膜层组52可以包括沿远离所述发光层305的方向依次叠设的电子注入层306和阴极307。图3中示出了三个阳极，左侧的阳极 301表面未设置第一膜层组51，第二膜层组52直接覆盖在左侧的阳极301表面，则左侧的阳极301所在区域不发光；中间的阳极301和右侧的阳极301被第一膜层组51的所有膜层和第二膜层组52的所有膜层依次覆盖，则中间的阳极301和右侧的阳极301所在区域可以发光。本公开实施例中，第一膜层组51和第二膜层组52的膜层结构可以预先设计，发光结构层103中的OLED器件可以设置为缺少第一膜层组51和第二膜层组52中的任意一个或多个膜层则不发光。
在一些示例性实施例中，所述第一膜层组可以包括沿远离所述阳极的方向依次叠设的空穴注入层、空穴传输层、电子阻挡层和发光层；所述第二膜层组可以包括沿远离所述发光层的方向依次叠设的空穴阻挡层、电子传输层、电子注入层和阴极。
在一些示例性实施例中，所述第一膜层组的厚度可以为10nm至300nm。示例性地，所述第一膜层组可以包括沿远离所述阳极的方向依次叠设的空穴注入层、空穴传输层和发光层，其中，空穴注入层、空穴传输层和发光层的总厚度可以为10nm至300nm。
在一些示例性实施例中，所述发光结构层可以包括发射多种颜色(比如可以包括红色、绿色和蓝色)光线的多个OLED器件，则所述发光区域可以实现彩色画面显示；或者，所述发光结构层可以包括一个发射设定颜色光线的OLED器件，则所述发光区域可以发出设定颜色的光线。
在一些示例性实施例中，所述第一膜层组可以包括两个或两个以上数目的膜层，所述第一膜层组中的任意两个膜层在所述基底上的正投影包含相同数目和位置的所述阳极在所述基底上的正投影。本实施例中第一膜层组中的任意两个膜层在所述基底上的正投影区域大致相同，第一膜层组的平面形状与显示基板的发光区域的形状大致相同。
在一些示例性实施例中，如图2所示，所述第二膜层组52的未与所述第一膜层组51交叠的部分中的一部分覆盖在所述阳极301表面。本实施例中，所述第一膜层组51或所述第二膜层组52包括所述发光层。本实施例的一些示例中，所述第二膜层组52包括所述发光层，所述第二膜层组52的一部分可以直接覆盖在所述阳极301表面，比如图2的示例中，第二膜层组52的一 部分直接覆盖在虚线椭圆内部的虚线所围成区域内的16个阳极301表面，但是，第二膜层组52的直接覆盖在所述阳极301表面的部分在基底101上的正投影区域可以设置为不发光。
在一些示例性实施例中，所述第一膜层组的膜面连续或者不连续。示例性地，所述第一膜层组的第一部分可以为一体结构，或者，所述第一膜层组的第一部分可以包括多个独立且不连接的子区域。本实施例中，所述第一膜层组的膜面连续，则形成的所述发光区域可理解为是一个连续的发光区域，所述第一膜层组的膜面不连续，则形成的所述发光区域可理解为包括多个不连续的子发光区域。
示例性地，如图2所示，本示例中，第一膜层组51的膜面连续，显示基板的发光区域大致为虚线椭圆区域除去中间位置的虚线所围成的区域后剩下的区域，发光区域的形状与第一膜层组51的平面形状大致相同。在另一些示例中，如图6所示，本示例中，第一膜层组51的膜面连续，显示基板的发光区域大致为虚线围成的呈倒V型的区域，发光区域的形状与第一膜层组51的平面形状大致相同。在另一些示例中，如图7所示，本示例中，第一膜层组的膜面51不连续，示例性地，第一膜层组51的平面形状为两个圆环形，发光区域的形状与第一膜层组的平面形状大致相同，显示基板的发光区域大致为虚线围成的两个圆环形区域。如图2、图6和图7所示，一些示例中，所述第一膜层组51的边缘可以为显示基板的发光区域的边缘。
在一些示例性实施例中，如图8所示，所述发光结构层可以包括一个OLED器件，第一膜层组51可以形成在阳极301表面，阳极301在基底101上的正投影可以包含第一膜层组51在基底101上的正投影，第二膜层组52在基底101上的正投影可以包含阳极301在基底101上的正投影。图8的示例中，第一膜层组51的膜面连续并为环形，显示基板的发光区域为第一膜层组51所在的区域，显示基板的发光区域为环形。
在一些示例性实施例中，所述第一膜层组的膜层可以采用喷墨打印、喷涂、原位生长、曝光显影和激光烧蚀中的任意一种或多种工艺形成，相较于蒸镀工艺来讲，较易实现多种图案的膜层的制备，且膜层尺寸较易控制。
本实施例的一个示例中，所述第一膜层组的膜层材料可以是有机材料， 比如，芳香族有机小分子、金属有机络合物、共轭高分子材料等；或者，所述第一膜层组的膜层材料可以是无机材料，比如，非晶的金属氧化物、硫化物或无机纳米颗粒等。
在一些示例性实施例中，所述第二膜层组的任意一个膜层可以为一体结构。所述第二膜层组的膜层的制备工艺可以不受限制，比如可以采用蒸镀或化学气相沉积等具有固-气相转变过程的工艺制备。本实施例的一个示例中，所述第二膜层组中除阴极之外的膜层的材料可以是有机材料或无机材料，比如，可以包括金属氧化物、卤化物或金属等。
本实施例的一个示例中，所述第二膜层组的膜层形状可以不受限制，所述第二膜层组的膜层形状可以与第一膜层组的膜层形状不相关。所述第二膜层组可以将所述第一膜层组完全覆盖，第二膜层组的边缘超出第一膜层组的边缘的最小距离可以大于第二膜层组的膜层的成膜工艺的位置精度值的2倍。
在一些示例性实施例中，如图3所示，所述驱动电路层的像素驱动电路可以采用有源矩阵(AM)驱动方式，像素驱动电路可以包括多个薄膜晶体管和存储电容，图3示意性地示出了一个驱动晶体管201和一个存储电容202，每个像素驱动电路驱动对应的一个OLED器件发光。在其他实施方式中，所述驱动电路层的像素驱动电路可以采用无源矩阵(PM)驱动方式。示例性地，驱动电路层102可以包括：设置在基底101上的第一绝缘层；设置在第一绝缘层上的有源层；覆盖有源层的第二绝缘层；设置在第二绝缘层上的栅电极和第一电容电极；覆盖栅电极和第一电容电极的第三绝缘层；设置在第三绝缘层上的第二电容电极；覆盖第二电容电极的第四绝缘层，第二绝缘层、第三绝缘层和第四绝缘层上开设有过孔，该过孔暴露出有源层；设置在第四绝缘层上的源电极和漏电极，源电极和漏电极分别通过穿过第四绝缘层、第三绝缘层和第二绝缘层的两个过孔与有源层连接；覆盖前述结构的平坦层，平坦层上开设有过孔，过孔暴露出漏电极。其中，有源层、栅电极、源电极和漏电极组成像素驱动电路的驱动晶体管201，第一电容电极和第二电容电极组成像素驱动电路的存储电容202。
在一些示例性实施例中，如图3所示，发光结构层103还可以包括设于所述阳极层的背离所述基底101一侧的像素定义层302，像素定义层302设 有像素开口，像素定义层302将阳极301表面的靠近周向边缘的部分覆盖，像素开口将阳极301表面的其余部分暴露出，阳极301表面被像素开口暴露出的部分依次叠设第一膜层组51和第二膜层组52，从而形成OLED器件。发光结构层103还可以包括其它膜层，比如设置在像素定义层302上的隔垫柱等。
本实施例的一个示例中，所述像素定义层302可以包括多个沿第一方向延伸的第一分隔部和多个沿第二方向延伸的第二分隔部，所述多个第一分隔部和所述多个第二分隔部相互交叉限定出多个像素开口，所述像素开口将所述阳极301表面暴露出；所述第一分隔部的厚度可以大于所述第二分隔部的厚度，所述第一膜层组51可以被所述第一分隔部隔断。所述第一膜层组51可以不被所述第二分隔部隔断。所述第一分隔部在所述第二方向上的宽度可以大于等于10微米。所述第二分隔部在所述第一方向上的宽度可以大于等于20微米。像素定义层302可以通过一步或两步曝光显影工艺形成。
本实施例的一个示例中，所述第一膜层组的第一部分至少具有第一膜厚和第二膜厚，所述第一膜厚大于所述第二膜厚；所述第一膜层组的第一部分的覆盖在所述第二分隔部上的部分具有所述第一膜厚，所述第一膜层组的第一部分的覆盖在所述阳极表面且与所述阳极表面直接接触的部分具有所述第二膜厚。示例性地，所述阳极通过所述驱动电路层设置的阳极过孔与驱动电路层内的一个薄膜晶体管的漏电极连接，所述第二分隔部在基底上的正投影可以包括所述阳极过孔在基底上的正投影，所述第二分隔部的与阳极过孔位置对应的部分的背离基底的表面可以形成有凹坑，所述第一膜层组的第一部分的与所述凹坑位置对应的部分的厚度为所述第一膜厚，所述第一膜层组的第一部分的覆盖在所述阳极表面且与所述阳极表面直接接触的部分的厚度为所述第二膜厚。示例性地，所述第一膜层组的膜层可以采用喷墨打印工艺形成。
在一些示例性实施例中，如图3所示，显示基板还可以包括设置在发光结构层103的远离基底101一侧的封装结构层104，封装结构层104可以包括依次叠设的第一封装层401、第二封装层402和第三封装层403，第一封装层401和第三封装层403可以采用无机材料，第二封装层402可以采用有机 材料，这样，可以有效保证外界水汽无法进入发光结构层103。显示基板还可以包括设置在封装结构层104的远离基底一侧的其它膜层，比如可以包括触控结构层、光取出层等。
下面结合图2至图5b说明本公开实施例的显示基板的制备方法，其中，所述显示基板包括OLED器件，所述OLED器件包括依次叠设的阳极、发光功能层和阴极，所述发光功能层包括叠设的多个膜层。在一些示例性实施方式中，显示基板的制备过程可以包括如下操作：
1)在基底101上形成驱动电路层102，所述驱动电路层102包括像素驱动电路。示例性地，如图4b所示，驱动电路层102的制备过程可以包括：
在基底101上依次沉积第一绝缘薄膜和有源层薄膜，通过构图工艺对有源层薄膜进行构图，形成覆盖基底101的第一绝缘层，以及设置在第一绝缘层上的有源层图案，有源层图案至少包括每个子像素的有源层。
随后，依次沉积第二绝缘薄膜和第一金属薄膜，通过构图工艺对第一金属薄膜进行构图，形成覆盖有源层图案的第二绝缘层，以及设置在第二绝缘层上的第一栅金属层图案，第一栅金属层图案至少包括每个子像素的栅电极和第一电容电极。
随后，依次沉积第三绝缘薄膜和第二金属薄膜，通过构图工艺对第二金属薄膜进行构图，形成覆盖第一栅金属层的第三绝缘层，以及设置在第三绝缘层上的第二栅金属层图案，第二栅金属层图案至少包括每个子像素的第二电容电极，第二电容电极的位置与第一电容电极的位置相对应。第一电容电极和第二电容电极组成存储电容202。
随后，沉积第四绝缘薄膜，通过构图工艺对第四绝缘薄膜进行构图，形成覆盖第二栅金属层的第四绝缘层图案，每个子像素的第四绝缘层上开设有至少两个过孔，两个过孔内的第四绝缘层、第三绝缘层和第二绝缘层被刻蚀掉，暴露出每个子像素的有源层的表面。
随后，沉积第三金属薄膜，通过构图工艺对第三金属薄膜进行构图，在第四绝缘层上形成源漏金属层图案，源漏金属层至少包括每个子像素的源电极和漏电极，源电极和漏电极分别通过穿过第四绝缘层、第三绝缘层和第二 绝缘层的两个过孔与有源层连接。
随后，在形成前述图案的基底101上涂覆有机材料的平坦薄膜，通过掩膜、曝光、显影等工序，在每个子像素的平坦薄膜上形成过孔，该过孔内的平坦薄膜被显影掉，暴露出漏电极的表面，从而形成覆盖基底101的平坦层(PLN)。
至此，在基底101上制备完成驱动电路层102，如图4b所示。驱动电路层102中，有源层、栅电极、源电极和漏电极组成像素驱动电路的驱动晶体管201，第一电容电极和第二电容电极组成像素驱动电路的存储电容202。像素驱动电路对每个子像素的OLED器件的驱动可以采用有源矩阵驱动方式。
本示例中，第一绝缘层、第二绝缘层、第三绝缘层和第四绝缘层可以采用硅氧化物(SiOx)、硅氮化物(SiNx)和氮氧化硅(SiON)中的任意一种或多种，可以是单层、多层或复合层。第一绝缘层可称为缓冲(Buffer)层，用于提高基底101的抗水氧能力，第二绝缘层和第三绝缘层可称为栅绝缘(GI)层，第四绝缘层可称为层间绝缘(ILD)层。第一金属薄膜、第二金属薄膜和第三金属薄膜可以采用金属材料，如银(Ag)、铜(Cu)、铝(Al)、钛(Ti)和钼(Mo)中的任意一种或多种，或上述金属的合金材料，如铝钕合金(AlNd)或钼铌合金(MoNb)，可以是单层结构或者多层复合结构，如Ti/Al/Ti等。有源层薄膜可以采用非晶态氧化铟镓锌材料(a-IGZO)、氮氧化锌(ZnON)、氧化铟锌锡(IZTO)、非晶硅(a-Si)、多晶硅(p-Si)、六噻吩、聚噻吩等材料。
2)在所述驱动电路层102的远离所述基底101一侧形成阳极层，所述阳极层包括一个或多个所述阳极301，如图4b所示。示例性地，在形成前述图案的基底101上沉积阳极薄膜，通过构图工艺对阳极薄膜进行构图，形成包括多个阳极301的阳极层，阳极301形成在驱动电路层102的平坦层上，并通过平坦层上的过孔与驱动晶体管201的漏电极连接。
3)形成像素定义层302和隔垫柱，如图4b所示，在形成前述图案的基底101上涂覆像素定义薄膜，通过掩膜、曝光、显影等工序，形成具有像素开口的像素定义层302，其中，像素开口内的像素定义薄膜被显影掉，暴露出相应的阳极301表面，像素定义层302将阳极301表面的靠近周向边缘的 部分覆盖，如图4a所示。像素定义层302的材料可以采用聚酰亚胺、亚克力或聚对苯二甲酸乙二醇酯等。随后，可以在像素定义层302上形成隔垫柱(PS)。
4)在所述阳极301的背离所述基底101的表面形成第一膜层组51，所述第一膜层组51包括所述发光功能层中的至少一个膜层，如图5a和图5b所示，示例性地，在设定区域的阳极301表面依次形成空穴注入层303、空穴传输层304和发光层305，其中，空穴注入层303、空穴传输层304和发光层305作为第一膜层组51。图5b的示例中，示出了三个阳极301，左侧的阳极301表面未形成第一膜层组51的膜层，中间的阳极301和右侧的阳极301被第一膜层组51的所有膜层覆盖。其中，空穴注入层303、空穴传输层304和发光层305可以采用喷墨打印、喷涂、原位生长、曝光显影和激光烧蚀中的任意一种或多种工艺形成。
5)在所述第一膜层组51的背离所述基底101的表面形成第二膜层组52，所述第二膜层组52包括所述发光功能层中的至少一个膜层和所述阴极307，如图2和图3所示，在第一膜层组51表面依次形成电子注入层306和阴极307，电子注入层306和阴极307作为第二膜层组52，电子注入层306和阴极307将第一膜层组51完全覆盖。电子注入层306和阴极307可以均为一体结构，电子注入层306和阴极307可以采用蒸镀工艺或化学气相沉积工艺等工艺形成，本示例对电子注入层306和阴极307的制备工艺不做限制。至此，完成发光结构层103的制备。
其中，所述第二膜层组52在所述基底101上的正投影包含所述第一膜层组51在所述基底101上的正投影，即第二膜层组52将第一膜层组51完全覆盖，所述第一膜层组51中所有膜层的交叠部分作为所述第一膜层组51的第一部分，所述第一膜层组51的第一部分的覆盖在所述阳极301表面的部分在所述基底101上的正投影区域为所述显示基板的发光区域，所述第二膜层组52的未与所述第一膜层组51的第一部分交叠的部分在所述基底101上的正投影区域设置为不发光。如图3所示，示例性地示出了三个阳极301，由于左侧的阳极301表面未形成第一膜层组51，因此第二膜层组52直接覆盖在左侧的阳极301表面，则左侧的阳极301所在区域不发光，中间的阳极301和右侧的阳极301的第一膜层组51表面覆盖有第二膜层组52，则中间的阳 极301和右侧的阳极301所在区域发光。
6)在发光结构层103的背离所述基底101的表面形成封装结构层104，如图3所示，示例性地，在发光结构层103的背离所述基底101的表面依次形成第一封装层401、第二封装层402和第三封装层403，第一封装层401和第三封装层403可以采用无机材料，第二封装层402可以采用有机材料，第一封装层401和第三封装层403将第二封装层402完全包裹，这样，可有效防止水氧侵入发光结构层103内。
基于上文内容，本公开实施例还提供一种显示基板的制备方法，所述显示基板包括OLED器件，所述OLED器件包括依次叠设的阳极、发光功能层和阴极，所述发光功能层包括叠设的多个膜层；所述制备方法包括：
在基底上形成驱动电路层，所述驱动电路层包括像素驱动电路；
在所述驱动电路层的远离所述基底一侧形成阳极层，所述阳极层包括一个或多个所述阳极；
在所述阳极的背离所述基底的表面形成第一膜层组，所述第一膜层组包括所述发光功能层中的至少一个膜层；
在所述第一膜层组的背离所述基底的表面形成第二膜层组，所述第二膜层组包括所述发光功能层中的至少一个膜层和所述阴极；
其中，所述第二膜层组在所述基底上的正投影包含所述第一膜层组在所述基底上的正投影，所述第一膜层组中所有膜层的交叠部分作为所述第一膜层组的第一部分，所述第一膜层组的第一部分的覆盖在所述阳极表面且与所述阳极表面直接接触的部分在所述基底上的正投影区域为所述显示基板的发光区域，所述第二膜层组的未与所述第一膜层组的第一部分交叠的部分在所述基底上的正投影区域设置为不发光；所述第一膜层组的边缘与所述第二膜层组的边缘之间的距离在多个位置处不同。
在一些示例性实施例中，所述第一膜层组的膜层采用喷墨打印、喷涂、原位生长、曝光显影和激光烧蚀中的任意一种或多种工艺形成。
在一些示例性实施例中，所述第二膜层组的任意一个膜层为一体结构，所述第二膜层组的膜层采用蒸镀工艺或化学气相沉积工艺形成。
本公开实施例还提供一种显示面板，包括前文任一实施例所述的显示基板。示例性地，显示面板还可以包括依次叠设在所述显示基板的封装结构层的背离所述基底一侧的偏光片和盖板。在其他实施方式中，显示面板还可以包括设置在封装结构层和所述偏光片之间的触控结构层。
本公开实施例还提供一种显示装置，包括前文任一实施例所述的显示基板。显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
在附图中，有时为了明确起见，夸大表示了构成要素的大小、层的厚度或区域。因此，本公开的实施方式并不一定限定于该尺寸，附图中每个部件的形状和大小不反映真实比例。此外，附图示意性地示出了一些例子，本公开的实施方式不局限于附图所示的形状或数值。
在本文描述中，“平行”是指两条直线形成的角度为-10°以上且10°以下的状态，因此，包括该角度为-5°以上且5°以下的状态。另外，“垂直”是指两条直线形成的角度为80°以上且100°以下的状态，因此，包括85°以上且95°以下的角度的状态。
在本文描述中，术语“上”、“下”、“左”、“右”、“顶”、“内”、“外”、“轴向”、“四角”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开实施例的简化描述，而不是指示或暗示所指的结构具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
在本文描述中，除非另有明确规定和限定，术语“连接”、“固定连接”、“安装”、“装配”应做广义理解，例如，可以是固定连接，或是可拆卸连接，或一体地连接；术语“安装”、“连接”、“固定连接”可以是直接相连，或通过中间媒介间接相连，或是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据情况理解上述术语在本公开实施例中的含义。

Claims (20)

  1. 一种显示基板，包括：设置在基底上的驱动电路层和设于所述驱动电路层的远离所述基底一侧的发光结构层，所述驱动电路层包括像素驱动电路，所述发光结构层包括与所述像素驱动电路连接的OLED器件，所述OLED器件包括依次叠设的阳极、发光功能层和阴极，所述发光功能层包括叠设的多个膜层；
    所述发光结构层包括依次叠设的阳极层、第一膜层组和第二膜层组，所述阳极层包括一个或多个所述阳极，所述第一膜层组包括所述发光功能层中的至少一个膜层，所述第二膜层组包括所述发光功能层中的至少一个膜层和所述阴极；
    所述第二膜层组在所述基底上的正投影包含所述第一膜层组在所述基底上的正投影，所述第一膜层组中所有膜层的交叠部分作为所述第一膜层组的第一部分，所述第一膜层组的第一部分的覆盖在所述阳极表面且与所述阳极表面直接接触的部分在所述基底上的正投影区域为所述显示基板的发光区域，所述第二膜层组的未与所述第一膜层组的第一部分交叠的部分在所述基底上的正投影区域设置为不发光；
    所述第一膜层组的边缘与所述第二膜层组的边缘之间的距离在多个位置处不同。
  2. 如权利要求1所述的显示基板，其中，所述发光功能层包括发光层，以及下述膜层中的任意一个或多个：空穴注入层、空穴传输层、电子阻挡层、空穴阻挡层、电子传输层、电子注入层。
  3. 如权利要求2所述的显示基板，其中，所述第一膜层组或所述第二膜层组包括所述发光层。
  4. 如权利要求2所述的显示基板，其中，所述第一膜层组包括所述空穴注入层、所述空穴传输层和所述电子阻挡层中的任意一个或多个。
  5. 如权利要求2所述的显示基板，其中，所述第二膜层组包括所述空穴阻挡层、所述电子传输层和所述电子注入层中的任意一个或多个。
  6. 如权利要求1至5任一项所述的显示基板，其中，所述第一膜层组包 括两个或两个以上数目的膜层，所述第一膜层组中的任意两个膜层在所述基底上的正投影包含相同数目和位置的所述阳极在所述基底上的正投影。
  7. 如权利要求1至5任一项所述的显示基板，其中，所述第二膜层组的未与所述第一膜层组交叠的部分中的一部分覆盖在所述阳极表面。
  8. 如权利要求1至5任一项所述的显示基板，其中，所述第一膜层组的膜面连续或者不连续。
  9. 如权利要求1至5任一项所述的显示基板，其中，所述第二膜层组的任意一个膜层为一体结构。
  10. 如权利要求1至5任一项所述的显示基板，其中，所述第一膜层组的膜层采用喷墨打印、喷涂、原位生长、曝光显影和激光烧蚀中的任意一种或多种工艺形成。
  11. 如权利要求1至5任一项所述的显示基板，其中，所述发光结构层还包括设于所述阳极层的背离所述基底一侧的像素定义层，所述像素定义层包括多个沿第一方向延伸的第一分隔部和多个沿第二方向延伸的第二分隔部，所述多个第一分隔部和所述多个第二分隔部相互交叉限定出多个像素开口，所述像素开口将所述阳极表面暴露出；
    所述第一分隔部的厚度大于所述第二分隔部的厚度，所述第一膜层组被所述第一分隔部隔断。
  12. 如权利要求11所述的显示基板，其中，所述第一分隔部在所述第二方向上的宽度大于等于10微米。
  13. 如权利要求11所述的显示基板，其中，所述第二分隔部在所述第一方向上的宽度大于等于20微米。
  14. 如权利要求11所述的显示基板，其中，所述第一膜层组的第一部分至少具有第一膜厚和第二膜厚，所述第一膜厚大于所述第二膜厚；
    所述第一膜层组的第一部分的覆盖在所述第二分隔部上的部分具有所述第一膜厚，所述第一膜层组的第一部分的覆盖在所述阳极表面且与所述阳极表面直接接触的部分具有所述第二膜厚。
  15. 如权利要求1至5任一项所述的显示基板，其中，所述第一膜层组 的厚度为10nm至300nm。
  16. 一种显示面板，包括权利要求1至15任一项所述的显示基板。
  17. 一种显示装置，包括权利要求1至15任一项所述的显示基板。
  18. 一种显示基板的制备方法，所述显示基板包括OLED器件，所述OLED器件包括依次叠设的阳极、发光功能层和阴极，所述发光功能层包括叠设的多个膜层；所述制备方法包括：
    在基底上形成驱动电路层，所述驱动电路层包括像素驱动电路；
    在所述驱动电路层的远离所述基底一侧形成阳极层，所述阳极层包括一个或多个所述阳极；
    在所述阳极的背离所述基底的表面形成第一膜层组，所述第一膜层组包括所述发光功能层中的至少一个膜层；
    在所述第一膜层组的背离所述基底的表面形成第二膜层组，所述第二膜层组包括所述发光功能层中的至少一个膜层和所述阴极；
    其中，所述第二膜层组在所述基底上的正投影包含所述第一膜层组在所述基底上的正投影，所述第一膜层组中所有膜层的交叠部分作为所述第一膜层组的第一部分，所述第一膜层组的第一部分的覆盖在所述阳极表面且与所述阳极表面直接接触的部分在所述基底上的正投影区域为所述显示基板的发光区域，所述第二膜层组的未与所述第一膜层组的第一部分交叠的部分在所述基底上的正投影区域设置为不发光；所述第一膜层组的边缘与所述第二膜层组的边缘之间的距离在多个位置处不同。
  19. 如权利要求18所述的显示基板的制备方法，其中，所述第一膜层组的膜层采用喷墨打印、喷涂、原位生长、曝光显影和激光烧蚀中的任意一种或多种工艺形成。
  20. 如权利要求18所述的显示基板的制备方法，其中，所述第二膜层组的任意一个膜层为一体结构，所述第二膜层组的膜层采用蒸镀工艺或化学气相沉积工艺形成。
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