WO2023245932A1 - 坩埚和单晶炉 - Google Patents

坩埚和单晶炉 Download PDF

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Publication number
WO2023245932A1
WO2023245932A1 PCT/CN2022/126115 CN2022126115W WO2023245932A1 WO 2023245932 A1 WO2023245932 A1 WO 2023245932A1 CN 2022126115 W CN2022126115 W CN 2022126115W WO 2023245932 A1 WO2023245932 A1 WO 2023245932A1
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Prior art keywords
crucible
crucible body
heating structure
line segment
groove
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PCT/CN2022/126115
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English (en)
French (fr)
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毛勤虎
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西安奕斯伟材料科技有限公司
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Publication of WO2023245932A1 publication Critical patent/WO2023245932A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • This application relates to the technical field of silicon product manufacturing, and in particular to a crucible and a single crystal furnace.
  • the production of single crystal silicon by Czochralski method is currently the most important method for preparing single crystal silicon.
  • the thermal field system is one of the most important conditions for the crystallization of silicon materials.
  • the temperature gradient distribution of the thermal field directly affects whether the single crystal can be successfully pulled out.
  • the heat source mainly comes from a graphite heater.
  • the heater is generally a fixed heater located on the periphery of the crucible. The heater generates heat energy to heat the crucible and internal silicon material in the form of radiation. This heating method is indirect heating and has low heating efficiency.
  • this application provides a crucible and a single crystal furnace to solve the problem of low heating efficiency.
  • a crucible used in a single crystal furnace, including a crucible main body, a heating structure is arranged around the outside of the crucible main body, and the heating structure conducts heat through insulation
  • the outer cover of the heating structure is provided with a heat-insulating protective cover, and the heat-insulating protective cover and the crucible main body form a sealed space accommodating the heating structure.
  • the crucible body includes a plurality of petals, and the heating structure is provided on each petal.
  • the bottom of the crucible body is supported by a support structure, and the heat insulation protective cover includes a top wall and a side wall, and a portion of the top wall away from the side wall overlaps the top of the crucible body, so The side walls are arranged around the crucible;
  • the heat insulation protective cover also includes a bottom wall, which is connected to the bottom of the crucible body, or the bottom wall is connected to the support structure, or the bottom wall is connected to the furnace body of the single crystal furnace. bottom connection.
  • a groove is provided on the inner surface of the side wall close to the crucible body, and the heating structure is embedded in the groove.
  • the heating structure includes a strip structure distributed longitudinally in the shape of a fold line, and the starting end and the ending end of the heating structure are both located at the bottom of the crucible body.
  • patterned protrusions are provided on the outer wall of the crucible body to form a folded groove, and the heating structure is accommodated in the groove to form the same pattern as the groove.
  • the heating structure includes:
  • a second line segment, the second line segment is parallel to the first line segment, and one end of the second line segment is correspondingly connected to the second end of each branch line segment, and the other end extends to the bottom of the crucible body .
  • the bottom of the crucible body is supported by a support structure
  • the support structure includes a support shaft and a support tray
  • the side of the support tray connected to the crucible body has a groove
  • the bottom of the crucible body has a groove with The grooves match the protrusions.
  • An embodiment of the present application also provides a single crystal furnace, including a furnace body and the above-mentioned crucible.
  • the heating structure is connected to the crucible body through an insulating heat-conducting layer, and is heated by heat conduction between fixed points, thereby improving the heating efficiency.
  • Figure 1 shows a schematic structural diagram of a single crystal furnace in the related art
  • Figure 2 shows a schematic structural diagram of a single crystal furnace in an embodiment of the present application
  • Figure 3 shows a schematic structural diagram of the crucible in the embodiment of the present application
  • Figure 4 shows the second structural diagram of the crucible in the embodiment of the present application
  • Figure 5 shows a schematic structural diagram of the heating structure in the embodiment of the present application.
  • a single crystal furnace includes a furnace body 5, and a crucible is provided in the furnace body 5 (the crucible includes a quartz crucible 3 and a graphite crucible 9).
  • the crucible is supported by a support structure 10, and a heater 8 is generally used.
  • the heater generates heat energy to heat the crucible and the internal silicon material in the form of radiation.
  • This heating method is indirect heating, and the heating efficiency is high. lower.
  • this embodiment provides a crucible, which is used in a single crystal furnace and includes a crucible body.
  • a heating structure 101 is arranged around the outside of the crucible body, and the heating structure 101 passes through The insulating and heat-conducting layer is connected to the crucible body.
  • the heating structure 101 is provided with a heat-insulating protective cover 102 on its outer cover.
  • the heat-insulating protective cover 102 and the crucible body form a sealed space for accommodating the heating structure 101 . .
  • a heating structure 101 is arranged around the outside of the crucible body, and the heating structure 101 is connected to the crucible body through an insulating heat-conducting layer, that is, the insulating heat-conducting layer is in direct contact with the crucible body, and the heating structure 101 is in direct contact with the crucible body.
  • the insulating and heat-conducting layer is in direct contact, that is, the crucible body, the insulating and heat-conducting layer and the heating structure 101 are in direct contact with each other.
  • this structural connection method directly changes the traditional The heat transmission mode of the thermal field structure in the actual application process: the change from thermal radiation to heat conduction between solids greatly improves the thermal efficiency of the thermal field and equipment and reduces heat loss; and the thermal insulation protection located outside the heating structure 101
  • the cover 102 can cover the heating structure 101 as a whole. On the one hand, it can prevent the oxides generated during the process from depositing on the surface of the heating body and affecting the heating effect. On the other hand, it can also reduce the outward heat radiation of the heating structure 101 and maintain heating stability. Reduce power consumption.
  • the insulating and thermally conductive layer is made of materials such as graphite or ceramics.
  • the thickness of the crucible body is 1 cm-2 cm, but is not limited to this.
  • the crucible body includes a plurality of petals, and the heating structure 101 is disposed on each petal.
  • the bottom of the crucible body is supported by the support structure 2, and the heat insulating protective cover 102 includes a top wall and a side wall, and a portion of the top wall away from the side wall is in contact with the crucible body.
  • the top is overlapped, and the side walls are surrounded by the crucible;
  • the heat insulation protective cover 102 also includes a bottom wall, which is connected to the bottom of the crucible body, or the bottom wall is connected to the support structure 2, or the bottom wall is connected to the bottom of the single crystal furnace. The bottom of the furnace body is connected.
  • a groove is provided on the inner surface of the side wall close to the crucible body, and the heating structure 101 is embedded in the groove.
  • the heating structure 101 includes a strip structure distributed longitudinally in a zigzag shape, and the starting end and the ending end of the heating structure 101 are both located at the bottom of the crucible body.
  • patterned protrusions are provided on the outer wall of the crucible body to form a folded groove, and the heating structure 101 is accommodated in the groove to form a connection with the groove. The same pattern.
  • the heating structure 101 includes:
  • a first line segment 1011 extending from the bottom of the crucible body to the top of the crucible body;
  • a plurality of groups of branch line segments 1012 are distributed along the extension direction of the first line segment 1011.
  • the first end of the branch line segment 1012 is connected to the first line segment 1011.
  • the second end of the branch line segment 1012 is along the
  • the crucible body extends circumferentially and is bent multiple times to form an S shape;
  • the second line segment 1013 is parallel to the first line segment 1011, and one end of the second line segment 1013 is connected to the second end of each branch line segment 1012, and the other end extends to Describe the bottom of the crucible body.
  • the branch line segment 1012 starts from the first side of the first line segment 1011 and extends along the circumferential direction of the crucible body until the first line segment 1011 is opposite to the first side. The other side is then bent in the opposite direction, and the branch line segment 1012 is formed through at least one bend.
  • the heating structure 101 may include a plurality of heating parts distributed along the circumference of the crucible body, and each heating part includes:
  • a first line segment 1011 extending from the bottom of the crucible body to the top of the crucible body;
  • a plurality of groups of branch line segments 1012 are distributed along the extension direction of the first line segment 1011.
  • the first end of the branch line segment 1012 is connected to the first line segment 1011.
  • the second end of the branch line segment 1012 is along the
  • the crucible body extends circumferentially and is bent multiple times to form an S shape;
  • the second line segment 1013 is parallel to the first line segment 1011, and one end of the second line segment 1013 is connected correspondingly to the second end of each branch line segment 1012, and the other end extends to Describe the bottom of the crucible body.
  • the crucible body includes a plurality of petals, each petal is provided with the heating structure 101, each petal includes two opposite sides, and the branch line segment 1012 is between the two sides. Repeatedly bend and extend settings.
  • the branch line segment includes a plurality of sub-line segments extending along the circumferential direction of the crucible body, and the distance between two adjacent sub-line segments in the same branch line segment is equal.
  • the thickness of the heating structure is 2-3 cm, but is not limited to this.
  • the bottom of the crucible body is supported by a support structure 2.
  • the support structure 2 includes a support shaft and a support tray. The side of the support tray connected to the crucible body has a groove.
  • the crucible The bottom of the body has protrusions that mate with the grooves.
  • An embodiment of the present application also provides a single crystal furnace, including a furnace body and the above-mentioned crucible.
  • the single crystal furnace also includes a ring electrode connected to the lead electrode of the heating part, so The lead-out electrode and the ring-shaped electrode are connected through a conductive member, the conductive member is arranged on the support structure 2, and one end of the conductive member passes through the support tray and the lead-out electrode of the heating structure 101 (The end of the first line segment 1011 located at the bottom of the crucible and the end of the second line segment 1013 located at the bottom of the crucible are each provided with a lead-out electrode) connection, and the other end of the conductive member is connected to the ring electrode , and can rotate along the ring electrode.
  • the support shaft is surrounded by an annular shell, and the inner wall of the annular shell is provided with annular protrusions surrounding the support shaft.
  • the annular protrusions form the annular electrodes, and the number of the annular electrodes is equal to the number of the annular electrodes.
  • the number of the lead-out electrodes corresponds to each other, and the outer wall of the annular housing is provided with external electrodes connected to the annular electrodes in one-to-one correspondence.
  • the support tray is provided with threaded mounting holes, one end of the conductive member is provided with a bolt electrode connected to the corresponding lead-out electrode, and the other end of the conductive member is provided with a bolt electrode connected to the ring electrode.
  • the width of the connection surface of the connection protrusion in the radial direction of the annular shell is less than or equal to the width of the connection surface of the annular protrusion. In the axial direction of the annular shell On the other hand, the thickness of the connecting protrusion is smaller than the distance between two adjacent annular protrusions to avoid short circuit.
  • the single crystal furnace includes a furnace body 5, and a crucible (including a graphite crucible 1 and a quartz crucible 3) is provided in the furnace body 5.
  • the silicon melt 6 is contained in the crucible, and the number 7 is a crystal rod.
  • the outer handle of the crucible contains It is covered with a heating structure 101, the outer cover of the heating structure 101 is provided with a heat insulation protective cover 102, and the inner part of the furnace body 5 is also provided with a thermal insulation layer 4.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)

Abstract

一种坩埚和单晶炉，坩埚应用于单晶炉内，包括坩埚主体，所述坩埚主体的外部围设有加热结构，且所述加热结构通过绝缘导热层与所述坩埚主体连接，所述加热结构的外部罩设有隔热保护罩，且所述隔热保护罩和所述坩埚主体合围形成容纳所述加热结构的密封空间。

Description

坩埚和单晶炉
相关申请的交叉引用
本申请主张在2022年06月21日在中国提交的中国专利申请号No.202210705510.3的优先权，其全部内容通过引用包含于此。
技术领域
本申请涉及硅产品制作技术领域，尤其涉及一种坩埚和单晶炉。
背景技术
直拉法生产单晶硅是目前制备单晶硅的最主要方法，热场系统是硅材料成晶的最重要的条件之一，热场的温度梯度分布直接影响着是否能顺利地拉出单晶和控制单晶的质量好坏，特别是通过直拉法单晶炉生长单晶硅材料的过程中，通常利用石墨热场提供生长温度，梯度控制等。具体过程中，是在低真空度且伴有惰性气体环境中进行多晶原料的熔化，通过籽晶的接触，旋转提升制备得到单晶材料，其中热源主要来自于石墨加热器。传统热场结构中，加热器普遍以位于坩埚外周的固定加热器为主，加热器产生热能以辐射的形式对坩埚以及内部硅料进行加热，这种加热方式为间接加热，加热效率较低。
发明内容
为了解决上述技术问题，本申请提供一种坩埚和单晶炉，解决加热效率低的问题。
为了达到上述目的，本申请实施例采用的技术方案是：一种坩埚，应用于单晶炉内，包括坩埚主体，所述坩埚主体的外部围设有加热结构，且所述加热结构通过绝缘导热层与所述坩埚主体连接，所述加热结构的外部罩设有隔热保护罩，且所述隔热保护罩和所述坩埚主体合围形成容纳所述加热结构的密封空间。
可选地，所述坩埚主体包括多个瓣体，每个瓣体上设置有所述加热结构。
可选地，所述坩埚主体的底部通过支撑结构支撑，所述隔热保护罩包括顶壁和侧壁，所述顶壁远离所述侧壁的部分与所述坩埚主体的顶部搭接，所述侧壁围设于所述坩埚的四周；
所述隔热保护罩还包括底壁，所述底壁与所述坩埚主体的底部连接，或者所述底壁与所述支撑结构连接，或者所述底壁与所述单晶炉的炉体的底部连接。
可选地，所述侧壁靠近所述坩埚主体的内表面上设置有凹槽，所述加热结构嵌设于所述凹槽内。
可选地，所述加热结构包括呈折线状纵向分布的条形结构，所述加热结构的起始端和结束端均位于所述坩埚主体的底部。
可选地，所述坩埚主体的外侧壁上设置图案化的凸起以形成呈折线状的凹槽，所述加热结构容纳于所述凹槽内形成与所述凹槽的图案相同的图案。
可选地，所述加热结构包括：
由所述坩埚主体的底部向所述坩埚主体的顶部延伸的第一线段；
沿所述第一线段的延伸方向分布的多组分支线段，所述分支线段的第一端与所述第一线段连接，所述分支线段的第二端沿所述坩埚主体的周向延伸并多次弯折形成S状；
第二线段，所述第二线段与所述第一线段平行，且所述第二线段的一端与每个所述分支线段的第二端对应连接，另一端延伸至所述坩埚主体的底部。
可选地，所述坩埚主体的底部通过支撑结构支撑，所述支撑结构包括支撑轴和支撑托盘，所述支撑托盘与所述坩埚主体连接的一面具有凹槽，所述坩埚主体的底部具有与所述凹槽相配合的凸起。
本申请实施例还提供一种单晶炉，包括炉体，以及上述的坩埚。
本申请的有益效果是：所述加热结构通过绝缘导热层与所述坩埚主体连接，通过固定间热传导的方式进行加热，提高加热效率。
附图说明
图1表示相关技术中的单晶炉的结构示意图；
图2表示本申请实施例中的单晶炉的结构示意图；
图3表示本申请实施例中的坩埚的结构示意图一；
图4表示本申请实施例中的坩埚的结构示意图二；
图5表示本申请实施例中的加热结构的结构示意图。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例的附图，对本申请实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本申请的一部分实施例，而不是全部的实施例。基于所描述的本申请的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要说明的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性。
参考图1，相关技术中，相关技术中，单晶炉包括炉体5，炉体5内设置有坩埚(坩埚包括石英坩埚3和石墨坩埚9)，坩埚通过支撑结构10支撑，加热器8普遍以位于坩埚外周的固定为主，加热器8与坩埚之间是具有一定的距离的，加热器产生热能以辐射的形式对坩埚以及内部硅料进行加热，这种加热方式为间接加热，加热效率较低。
参考图2-图5，针对上述问题，本实施例提供一种坩埚，应用于单晶炉内，包括坩埚主体，所述坩埚主体的外部围设有加热结构101，且所述加热结构101通过绝缘导热层与所述坩埚主体连接，所述加热结构101的外部罩设有隔热保护罩102，且所述隔热保护罩102和所述坩埚主体合围形成容纳所述加热结构101的密封空间。
所述坩埚主体的外部围设有加热结构101，且所述加热结构101通过绝缘导热层与所述坩埚主体连接，即所述绝缘导热层与所述坩埚主体直接接触，所述加热结构101与所述绝缘导热层直接接触，即所述坩埚主体、所述绝缘 导热层和所述加热结构101之间是固定间的直接接触，对比图1的结构，这样的结构连接方式，直接改变了传统热场结构在实际应用过程热量的传输方式：从热辐射到固体间热传导的方式转变，极大的提高了热场以及设备的热效率，降低了热损耗；且位于加热结构101外侧的隔热保护罩102可将加热结构101整体包覆，一方面可避免工艺过程中生成的氧化物沉积在加热体表面，影响加热效果，另一方面也可减少加热结构101向外热辐射，维持加热稳定，降低功耗。
示例性地，所述绝缘导热层采用石墨或陶瓷等材料制成。
示例性地，所述坩埚主体的厚度为1cm-2cm，但并不以此为限。
在示例性的实施方式中，所述坩埚主体包括多个瓣体，每个瓣体上设置有所述加热结构101。
在示例性的实施方式中，所述坩埚主体的底部通过支撑结构2支撑，所述隔热保护罩102包括顶壁和侧壁，所述顶壁远离所述侧壁的部分与所述坩埚主体的顶部搭接，所述侧壁围设于所述坩埚的四周；
所述隔热保护罩102还包括底壁，所述底壁与所述坩埚主体的底部连接，或者所述底壁与所述支撑结构2连接，或者所述底壁与所述单晶炉的炉体的底部连接。
在示例性的实施方式中，所述侧壁靠近所述坩埚主体的内表面上设置有凹槽，所述加热结构101嵌设于所述凹槽内。
在示例性的实施方式中，所述加热结构101包括呈折线状纵向分布的条形结构，所述加热结构101的起始端和结束端均位于所述坩埚主体的底部。
在示例性的实施方式中，所述坩埚主体的外侧壁上设置图案化的凸起以形成呈折线状的凹槽，所述加热结构101容纳于所述凹槽内形成与所述凹槽的图案相同的图案。
在示例性的实施方式中，所述加热结构101包括：
由所述坩埚主体的底部向所述坩埚主体的顶部延伸的第一线段1011；
沿所述第一线段1011的延伸方向分布的多组分支线段1012，所述分支线段1012的第一端与所述第一线段1011连接，所述分支线段1012的第二端沿所述坩埚主体的周向延伸并多次弯折形成S状；
第二线段1013，所述第二线段1013与所述第一线段1011平行，且所述第二线段1013的一端与每个所述分支线段1012的第二端对应连接，另一端延伸至所述坩埚主体的底部。
示例性地，所述分支线段1012由所述第一线段1011的第一侧起始，沿着所述坩埚主体的周向方向延伸至所述第一线段1011与所述第一侧相对的另一侧，然后反向弯折，经过至少一次弯折形成所述分支线段1012。
示例性地，所述加热结构101可以包括多个加热部，多个所述加热部沿所述坩埚主体的周向分布，每个所述加热部包括：
由所述坩埚主体的底部向所述坩埚主体的顶部延伸的第一线段1011；
沿所述第一线段1011的延伸方向分布的多组分支线段1012，所述分支线段1012的第一端与所述第一线段1011连接，所述分支线段1012的第二端沿所述坩埚主体的周向延伸并多次弯折形成S状；
第二线段1013，所述第二线段1013与所述第一线段1011平行，且所述第二线段1013的一端与每个所述分支线段1012的第二端对应连接，另一端延伸至所述坩埚主体的底部。
示例性地，所述坩埚主体包括多个瓣体，每个瓣体上设置有所述加热结构101，每个瓣体包括相对的两个侧边，所述分支线段1012在两个侧边之间反复弯折延伸设置。
示例性的实施方式中，所述分支线段包括沿所述坩埚主体的周向方向延伸的多个子线段，同一分支线段中的相邻两个子线段之间的距离相等。
示例性地，不同的分支线段中的相邻两个子线段之间的距离相等。
示例性地，在所述坩埚主体的径向方向上，所述加热结构的厚度为2-3cm，但并不以此为限。
示例性的实施方式中，所述坩埚主体的底部通过支撑结构2支撑，所述支撑结构2包括支撑轴和支撑托盘，所述支撑托盘与所述坩埚主体连接的一面具有凹槽，所述坩埚主体的底部具有与所述凹槽相配合的凸起。
本申请实施例还提供一种单晶炉，包括炉体，以及上述的坩埚。
在实际工艺过程中，所述坩埚是旋转的，为了保证在旋转过程中，所述加热结构101的通电状态，所述单晶炉还包括与所述加热部的引出电极连接 的环形电极，所述引出电极和所述环形电极之间通过导电件连接，所述导电件设置于所述支撑结构2上，且所述导电件的一端穿过所述支撑托盘与所述加热结构101的引出电极(所述第一线段1011位于所述坩埚底部的一端以及所述第二线段1013位于所述坩埚底部的一端均设置有引出电极)连接，所述导电件的另一端与所述环形电极连接，且可沿着所述环形电极旋转。
所述支撑轴的外部围设有环形壳体，所述环形壳体的内壁上凸设有环绕所述支撑轴的环形凸起，所述环形凸起形成所述环形电极，环形电极的数量与所述引出电极的数量相对应，所述环形壳体的外壁上设置有与所述环形电极一一对应连接的外接电极。
示例性地，所述支撑托盘上设置有螺纹安装孔，所述导电件的一端设置有与对应的所述引出电极连接的螺栓电极，所述导电件的另一端设置于所述环形电极连接的连接凸起，在所述环形壳体的径向方向上，所述连接凸起的连接面的宽度小于或等于所述环形凸起的连接面的宽度，在所述环形壳体的轴向方向上，所述连接凸起的厚度小于相邻两个所述环形凸起之间的距离，避免短路。
所述单晶炉包括炉体5，所述炉体5内设置有坩埚(包括石墨坩埚1和石英坩埚3)，坩埚内容纳有硅熔体6，标号7为晶棒，坩埚的外部把包覆有加热结构101，加热结构101的外部罩设有隔热保护罩102，所述炉体5的内侧部还设置有保温层4。
可以理解的是，以上实施方式仅仅是为了说明本申请的原理而采用的示例性实施方式，然而本申请并不局限于此。对于本领域内的普通技术人员而言，在不脱离本申请的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本申请的保护范围。

Claims (9)

  1. 一种坩埚，应用于单晶炉内，包括坩埚主体，所述坩埚主体的外部围设有加热结构，且所述加热结构通过绝缘导热层与所述坩埚主体连接，所述加热结构的外部罩设有隔热保护罩，且所述隔热保护罩和所述坩埚主体合围形成容纳所述加热结构的密封空间。
  2. 根据权利要求1所述的坩埚，其中，所述坩埚主体包括多个瓣体，每个瓣体上设置有所述加热结构。
  3. 根据权利要求1所述的坩埚，其中，所述坩埚主体的底部通过支撑结构支撑，所述隔热保护罩包括顶壁和侧壁，所述顶壁远离所述侧壁的部分与所述坩埚主体的顶部搭接，所述侧壁围设于所述坩埚的四周；
    所述隔热保护罩还包括底壁，所述底壁与所述坩埚主体的底部连接，或者所述底壁与所述支撑结构连接，或者所述底壁与所述单晶炉的炉体的底部连接。
  4. 根据权利要求3所述的坩埚，其中，所述侧壁靠近所述坩埚主体的内表面上设置有凹槽，所述加热结构嵌设于所述凹槽内。
  5. 根据权利要求1所述的坩埚，其中，所述加热结构包括呈折线状纵向分布的条形结构，所述加热结构的起始端和结束端均位于所述坩埚主体的底部。
  6. 根据权利要求5所述的坩埚，其中，所述坩埚主体的外侧壁上设置图案化的凸起以形成呈折线状的凹槽，所述加热结构容纳于所述凹槽内形成与所述凹槽的图案相同的图案。
  7. 根据权利要求6所述的坩埚，其中，所述加热结构包括：
    由所述坩埚主体的底部向所述坩埚主体的顶部延伸的第一线段；
    沿所述第一线段的延伸方向分布的多组分支线段，所述分支线段的第一端与所述第一线段连接，所述分支线段的第二端沿所述坩埚主体的周向延伸并多次弯折形成S状；
    第二线段，所述第二线段与所述第一线段平行，且所述第二线段的一端与每个所述分支线段的第二端对应连接，另一端延伸至所述坩埚主体的底部。
  8. 根据权利要求1所述的坩埚，其中，所述坩埚主体的底部通过支撑结构支撑，所述支撑结构包括支撑轴和支撑托盘，所述支撑托盘与所述坩埚主体连接的一面具有凹槽，所述坩埚主体的底部具有与所述凹槽相配合的凸起。
  9. 一种单晶炉，包括炉体，以及权利要求1-8任一项所述的坩埚。
PCT/CN2022/126115 2022-06-21 2022-10-19 坩埚和单晶炉 WO2023245932A1 (zh)

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