WO2023236255A1 - 曝光方法、装置、计算机设备、存储介质和计算机程序产品 - Google Patents
曝光方法、装置、计算机设备、存储介质和计算机程序产品 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Definitions
- the present disclosure relates to the technical field of semiconductor photolithography exposure, and in particular to an exposure method, device, computer equipment, storage medium and computer program product.
- the exposure machine is a commonly used machine in the semiconductor process, which can perform patterning processing on various film layers.
- the hardware inside the machine will age, thus affecting the performance of the product.
- the intensity of the exposure will be abnormal, resulting in abnormalities in the critical dimensions of the exposure pattern.
- an exposure method, apparatus, computer equipment, computer-readable storage medium, and computer program product are provided.
- an exposure method including:
- the diffraction light intensity is the light intensity after the light beam is diffracted by the diffractive optical element
- the preset exposure block is located before the i+1th exposure block, and i is a positive integer;
- the exposure dose of the i+1th exposure block is compensated.
- the exposure dose compensation value of the i+1 exposure block is calculated based on the reference diffraction light intensity and the actual diffraction light intensity, including:
- the exposure dose compensation value of the i+1th exposure block is calculated based on the first i actual diffraction light intensities exposed to the first i exposure block and the reference diffraction light intensity.
- the exposure dose compensation value of the i+1th exposure block is calculated, including:
- the i-th sub-dose compensation value is calculated based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the reference diffraction light intensity;
- the i-th sub-dose compensation value is calculated based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the actual diffraction light intensity exposed to the i-1 exposure block;
- the exposure dose compensation value of the i+1th exposure block is calculated.
- the exposure time of the i-th exposure block is calculated based on the size and exposure speed of the i-th exposure block, and the i-th sub-dose compensation is calculated based on the light intensity difference and the exposure time. value.
- the exposure dose compensation value of the i+1th exposure block is calculated based on the reference diffraction light intensity and the actual diffraction light intensity, including:
- the exposure dose compensation value of the i+1th exposure block is calculated based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the reference diffraction light intensity.
- the exposure dose compensation value of the i+1th exposure block is calculated based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the reference diffraction light intensity, including:
- For the first i exposure blocks calculate the exposure duration of each exposure block based on the size and exposure speed corresponding to each exposure block;
- the exposure dose compensation value of the i+1th exposure block is calculated.
- the reference diffraction light intensity is the initial diffraction light intensity detected within the first preset time before the exposure machine performs exposure.
- the first preset time is 0.5min-1.5min.
- the method before compensating the exposure dose of the i+1th exposure block according to the exposure dose compensation value, the method further includes:
- the exposure dose of the i+1-th exposure block is compensated according to the exposure dose compensation value.
- the i+1-th exposure block is exposed according to its original exposure dose.
- the method for obtaining the threshold light intensity includes:
- a diffraction light intensity value when the critical size exceeds a preset size range is obtained as the threshold light intensity.
- an exposure device including:
- Light source module including light emitter and diffractive optical elements
- a detection module used to detect the diffraction light intensity, which is the light intensity of the light beam emitted by the light emitter after being diffracted by the diffractive optical element;
- a control module connected to the light source module and the detection module, is used to control exposure according to the method of any one of claims 1-11.
- the light emitter includes a laser
- the light source module further includes a zoom element, a ring optical element, a refractive optical element, and an optical coupling element.
- a computer device including a memory and a processor.
- the memory stores a computer program.
- the processor executes the computer program, it implements any of the above methods. step.
- a computer-readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, the steps of any of the methods described above are implemented.
- a computer program product including a computer program that implements the steps of any of the above methods when executed by a processor.
- Embodiments of the present disclosure may/at least have the following advantages:
- the above-mentioned exposure methods, devices, computer equipment, storage media and computer program products realize the monitoring of the light intensity of the light beam emitted by the light emitter after being diffracted by the diffractive optical element through the acquisition of the reference diffraction light intensity and the actual diffraction light intensity, and control the exposure
- the exposure dose of the block is effectively compensated. Therefore, this embodiment can improve the critical dimension uniformity of each exposure block of the target layer.
- the exposure dose of the exposure area is compensated, and the exposure machine can work for a longer time after the debugging is completed, thereby improving the machine's use efficiency and increasing production capacity. At this time, the life of the optical device can be extended.
- the monitoring of diffraction light intensity it can also be used to monitor the health of the exposure machine (especially the health of the optical components) and detect machine problems in advance.
- Figure 1 is a schematic flow chart of an exposure method in one embodiment
- Figure 2 is a schematic diagram of the exposure area in the target layer in the wafer in one embodiment
- Figure 3 is a schematic flowchart of calculating the exposure dose compensation value of the i+1th exposure block in one embodiment
- Figure 4 is a schematic flow chart of an exposure method in another embodiment
- Figure 5 is a structural block diagram of an exposure device in one embodiment
- Figure 6 is a schematic structural diagram of a light source module in one embodiment
- Figure 7 is an internal structure diagram of a computer device in one embodiment
- Figure 8 is a schematic diagram of the key dimensions of the exposure pattern gradually formed in each exposure block during the exposure process in one embodiment
- Figure 9 is a schematic diagram of the variation of diffracted light intensity with time in one embodiment.
- an exposure method including the following steps:
- Step S200 obtain the reference diffraction light intensity for exposing the target layer.
- the diffraction light intensity is the light intensity after the light beam emitted by the light emitter is diffracted by the diffractive optical element;
- Step S400 obtain the actual diffraction light intensity exposed to the preset exposure block of the target layer.
- the preset exposure block is located before the i+1th exposure block, and i is a positive integer;
- Step S600 Calculate the exposure dose compensation value of the i+1th exposure block based on the reference diffraction light intensity and the actual diffraction light intensity;
- Step S800 Compensate the exposure dose of the i+1th exposure block according to the exposure dose compensation value.
- step S200 during the exposure process, the light beam emitted by the light emitter needs to be diffracted by a diffractive optical element (Diffractive optical element, DOE).
- DOE diffractive optical element
- the light intensity after the light beam is diffracted by the diffractive optical element is called the diffraction light intensity.
- the diffractive optical element After the light beam is diffracted by the diffractive optical element, it then passes through the action of other optical elements (such as ring optical elements, optical coupling elements, refractive optical elements, etc.), and finally forms a light source for exposure.
- other optical elements such as ring optical elements, optical coupling elements, refractive optical elements, etc.
- There are many shapes of light sources such as cylindrical light sources, ring light sources). The shapes of these light sources can be created by combining many exposure optics.
- the target layer can be any film layer formed on the wafer that needs to be exposed.
- DOEs diffractive optical elements
- the reference diffraction light intensity for exposing the target layer is the reference for exposing the target layer, which can be obtained in advance before exposing the target layer.
- Critical dimension ideals can be understood as critical dimension standards or close to standards.
- the reference diffraction light intensity may be the initial diffraction light intensity detected within the first preset time before exposure by the exposure machine.
- the first preset time can be set according to actual needs, for example, it can be set to 0.5min-1.5min.
- the reference diffraction light intensity can also be obtained from historical or experimental or simulated data, and there is no restriction on this here.
- step S400 please refer to FIG. 2.
- multiple exposure blocks 10 may be set.
- Each exposure block 10 in the figure corresponds to three data.
- the number a above the exposure block 10 indicates the scanning sequence.
- the number b in the middle represents the number.
- the light beam moves along the preset direction (such as the Y direction) to achieve exposure.
- the following numbers indicate the exposure speed (i.e., moving speed) of the c beam on each exposure block, in mm/s.
- each exposure block of the target layer is exposed, the diffraction light intensity can be detected, thereby obtaining the actual diffraction light intensity of each exposure block.
- the preset exposure block is located before the i+1th exposure block, which may include multiple exposure blocks before the i+1th exposure block, or may be the i+1th exposure block.
- the exposure block before the exposure block may include multiple exposure blocks before the i+1th exposure block, or may be the i+1th exposure block.
- step S600 there is a correlation between the diffraction light intensity and the exposure dose. Therefore, the exposure dose compensation value can be calculated based on the reference diffraction light intensity and the actual diffraction light intensity of the preset exposure area. When the i+1th exposure block is exposed, the exposure dose compensation value is used to compensate the exposure dose.
- step S800 the exposure dose compensation value can be added to the original exposure dose to obtain the exposure dose of the i+1th exposure block. Then, the i+1th exposure block is exposed with this exposure dose.
- the original exposure dose is the originally set initial exposure dose, and each exposure block has an initial exposure dose.
- this embodiment by obtaining the reference diffraction light intensity and the actual diffraction light intensity, the light intensity of the light beam emitted by the light emitter after being diffracted by the diffractive optical element is monitored, and the exposure dose of the exposed area is effectively compensated. Therefore, this embodiment can improve the critical dimension uniformity of each exposure block of the target layer.
- the exposure dose of the exposure block is compensated, and the exposure machine can work for a longer time after debugging is completed, thus improving the machine's usage efficiency and increasing production capacity. At this time, the life of the optical device can be extended.
- the monitoring of diffraction light intensity it can also be used to monitor the health of the exposure machine (especially the health of the optical components) and detect machine problems in advance.
- step S600 includes:
- Step S610 Calculate the exposure dose compensation value of the (i+1)th exposure block based on the first i actual diffraction light intensities and the reference diffraction light intensity exposed to the first i exposure block.
- the reference diffracted light intensity can be obtained before exposing the target layer.
- each exposure block is scanned and exposed one by one in sequence. While scanning and exposing each exposure block, its diffraction light intensity can also be detected, thereby obtaining the actual diffraction light intensity of each exposure block.
- the first i exposure blocks are all exposure blocks exposed before the i+1th exposure block.
- changes in diffraction light intensity during the exposure process can be monitored in detail based on the actual diffraction light intensity of all exposure blocks exposed before the i+1th exposure block and the reference diffraction light intensity. Based on this, the exposure dose compensation value of the i+1th exposure block can be calculated more accurately.
- step S610 includes:
- Step S611 when i is equal to 1, calculate the i-th sub-dose compensation value based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the reference diffraction light intensity;
- Step S612 when i is greater than 1, calculate the i-th sub-dose based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the actual diffraction light intensity exposed to the i-1th exposure block. compensation value;
- Step S613 Calculate the exposure dose compensation value of the i+1th exposure block based on the sum of the previous i sub-dose compensation values.
- the first sub-dose compensation value is related to the difference between the actual diffraction light intensity exposed in the first exposure block and the reference diffraction light intensity int 0 .
- the i-th sub-dose compensation value is related to the difference between the actual diffraction light intensity of the i-th exposure block and the actual diffraction light intensity of the i-1th exposure block.
- the exposure time of the i-th block can be calculated based on the size and exposure speed of the i-th exposure block, and the i-th sub-dose compensation can be calculated by combining the light intensity difference and exposure time. value.
- the size of the exposure area is its length in the moving direction of the exposure beam (the Y direction in the figure).
- the exposure speed of an exposure block is the speed at which the exposure beam moves across it.
- the exposure time of each exposure block can also be stored in the memory without having to be obtained through calculation.
- the first sub-dose compensation value d 1 can be expressed as:
- abs means taking the absolute value of the value in brackets
- int 1 means the actual diffraction light intensity of the first exposure block
- int 0 means the base diffraction light intensity
- t 1 means the exposure time of the first block.
- the i-th sub-dose compensation value di can be expressed as:
- abs means taking the absolute value of the value in brackets
- int i means the actual diffraction light intensity exposed by the i-th exposure block
- int i-1 means the actual diffraction light intensity exposed by the i-1th exposure block
- t i represents the exposure time of the i-th block.
- step S613 the exposure dose compensation value ⁇ i+ 1 of the i+1th exposure block can be expressed as:
- ⁇ i+1 ⁇ d m , where m ranges from 1 to i, and ⁇ d m represents the sum of the previous i sub-dose compensation values.
- the i sub-dose compensation value is first calculated and obtained based on the i exposure blocks before the i+1th exposure block. Then, the i sub-dose compensation values are added to obtain the exposure dose compensation value of the i+1th exposure block. At this time, the diffraction light intensity changes of each exposure block before the i+1th exposure block can be taken into account, thereby improving the compensation accuracy.
- Each sub-dose compensation value is obtained by the product of the exposure time and the light intensity change, which can accurately reflect the exposure dose change caused by the diffraction light intensity change of each exposure block, so that the i+1th The exposure dose of each exposure block is effectively compensated.
- step S610 may also calculate the exposure dose compensation value of the i+1th exposure block through other methods.
- the exposure dose compensation value ⁇ i+ 1 of the i+1th exposure block can be expressed as:
- ⁇ i+1 (abs(int 1 -int 0 )+ ⁇ abs(int i -int i-1 ))* tall , where abs means taking the absolute value of the value in the brackets, int 1 means the first exposure
- int 0 represents the base diffraction light intensity
- int i represents the actual diffraction light intensity of the i-th exposure block
- int i-1 represents the actual diffraction of the i-1th exposure block
- Light intensity and t both represent the average exposure duration of the previous i exposure blocks
- i is a positive integer greater than 1
- m ranges from 1 to i.
- step S600 includes:
- Step S620 Calculate the exposure dose compensation value of the i+1th exposure block based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the reference diffraction light intensity;
- the difference in intensity between the actual diffraction light intensity of the previous exposure block and the reference diffraction light intensity is directly used to calculate the exposure dose compensation value of the next exposure block, thereby simplifying the calculation process of the compensation value. Improve exposure efficiency.
- step S620 includes:
- Step S621 for the first i exposure blocks, calculate the exposure duration of each exposure block based on the size and exposure speed corresponding to each exposure block;
- Step S622 Calculate the average exposure duration of the first i exposure blocks
- Step S623 Calculate the exposure dose compensation value of the i+1th exposure block based on the light intensity difference and the average exposure time.
- the size of the exposure block is its length in the moving direction of the exposure beam (the Y direction in the figure).
- the exposure speed of the exposure block is the speed at which the exposure beam moves over it.
- the exposure duration of each exposure block is related to its size and exposure speed.
- step S622 the average exposure duration t of the first i exposure blocks can be expressed as:
- t ⁇ t m /i, where m ranges from 1 to i, t m represents the exposure duration of the m-th exposure block, and ⁇ t m represents the sum of the exposure durations of the previous i exposure blocks.
- step S623 the exposure dose compensation value of the i+1-th exposure block is calculated based on the light intensity difference between the actual diffraction light intensity exposed by the i-th exposure block and the reference diffraction light intensity and the average exposure time.
- the exposure dose compensation value ⁇ i+ 1 of the i+1th exposure block can be expressed as:
- abs means taking the absolute value of the value in the brackets
- int i means the actual diffraction light intensity exposed by the i-th exposure block
- int 0 means the reference diffraction light intensity
- the change value of the actual diffraction light intensity of the i-th exposure block relative to the reference diffraction light intensity that is, the actual diffraction light intensity of the i-th exposure block exposed and the reference diffraction light intensity The light intensity difference
- the exposure dose compensation value of the i+1th exposure block can be obtained relatively accurately.
- step S620 may also obtain the exposure dose compensation value of the i+1th exposure block through other methods. For example, it is also possible to select the median among the i exposure durations of the first i exposure block, and use the median to calculate the change in the actual diffraction light intensity of the i-th exposure block relative to the reference diffraction light intensity.
- the exposure dose compensation value of the i+1th exposure block is calculated by multiplying the values.
- step S800 it also includes:
- Step S700 determine whether the actual diffraction light intensity exposed to the i-th exposure block is lower than the threshold light intensity
- the threshold light intensity is the threshold value of the diffraction light intensity that enables the critical dimensions of the pattern formed by exposure to be controlled within a preset size range. Changes in diffracted light intensity affect critical dimension values. When the diffracted light intensity drops below the threshold light intensity, the obtained critical dimension value may exceed the preset size range.
- the preset size range can be set according to actual needs. For example, the standard key dimension value you want to control is But when A range of critical dimensions are acceptable. Then at this time Can be set to a preset size range.
- step S800 is entered, and the exposure dose of the i+1-th exposure block is compensated according to the exposure dose compensation value.
- the exposure dose of the i+1th exposure block is compensated according to the exposure dose compensation value, thereby effectively preventing the critical size of the i+1th exposure block from exceeding the preset size range.
- step S800 is entered, and the exposure dose of the i+1th exposure block is compensated according to the exposure dose compensation value, thereby causing the key size of the exposure pattern of the i+1th exposure block to return to the default size. within the range. Therefore, this embodiment can well control the critical size of the exposure pattern within the preset size range.
- the exposure dose of the i+1-th exposure block is not compensated, that is, step S900 can be performed. According to the i-th exposure block, the exposure dose is not compensated. Expose the exposure block with the original exposure dose.
- the actual diffraction light intensity exposed to the i-th exposure block is not lower than the threshold light intensity, it means that although the diffraction light intensity has attenuated to a certain extent, it is still within an acceptable range.
- the exposure is carried out according to the original exposure dose, and the key size of the formed pattern is relatively easy to control within the preset size range.
- the exposure dose of the i+1th exposure block does not need to be compensated.
- whether to compensate the exposure dose of the next exposure block can be determined based on the attenuation degree of the diffraction light intensity of the previous exposure block, thereby effectively improving the exposure efficiency.
- the method for obtaining the threshold light intensity includes:
- Step S20 obtain the diffraction light intensity distribution exposed to the target layer within the second preset time
- Step S40 obtain the key size distribution of the target layer within the second preset time
- Step S60 According to the diffraction light intensity distribution and the critical size distribution, the diffraction light intensity value when the critical size exceeds the preset size range is obtained as the threshold light intensity.
- the second preset time can be set according to actual needs. For example, see Figure 9, you can set the second preset time to four months.
- the diffracted light intensity finally decays to 5685.74cd within the second preset time.
- the optical elements can then be replaced, allowing the diffracted light intensity to reach 7256.73cd.
- the diffracted light intensity exposed to the target layer can be obtained through detection. Specifically, the diffracted light intensity exposed to the target layer can be detected every once in a second preset time. Each inspection can measure the diffraction light intensity of the target layer exposed multiple times, and then take the average value of the diffraction light intensity for that time.
- step S40 the critical dimensions of the same exposure pattern or the same group of exposure patterns of the target layer can be monitored within the second preset time, thereby obtaining the critical dimension distribution of the target layer within the second preset time.
- step S60 by comparing the diffraction light intensity distribution and the critical size distribution, the diffraction light intensity value when the critical size exceeds the preset size range can be obtained as the threshold light intensity.
- the preset size range which can be lower than the lowest value of the preset size range or higher than the highest value of the preset size range.
- an exposure device is also provided, see FIG. 5 , including: a light source module 100 , a detection module 200 and a control module 300 .
- the light source module 100 includes a light emitter 110 and a diffractive optical element 120 .
- the light emitter 110 may include a laser or the like.
- the diffractive optical element 120 diffracts the light beam emitted by the light emitter.
- the light source module 100 may also include other optical elements.
- the light source module 100 may further include a zoom element 130, a ring optical element 140, an optical coupling element 150, a refractive optical element 160, and the like. After the light beam emitted by the light emitter 110 is diffracted by the diffractive optical element 120, it can then pass through the zoom element 130, the ring optical element 140, the optical coupling element 150, the refractive optical element 160, etc., and finally form a light source for exposure.
- the detection module 200 is used to detect the diffracted light intensity, and may be a light intensity measuring instrument, for example.
- the diffracted light intensity is the light intensity after the light beam emitted by the light emitter is diffracted by the diffractive optical element.
- the control module 300 is connected to the light source module 100 and the detection module 200, and is used to control exposure according to the above method.
- Each module in the above-mentioned exposure device can be implemented in whole or in part by software, hardware and combinations thereof.
- Each of the above modules may be embedded in or independent of the processor of the computer device in the form of hardware, or may be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules.
- a computer device is provided.
- the computer device may be a terminal, and its internal structure diagram may be as shown in FIG. 7 .
- the computer device includes a processor, memory, communication interface, display screen and input device connected through a system bus.
- the processor of the computer device is used to provide computing and control capabilities.
- the memory of the computer device includes non-volatile storage media and internal memory.
- the non-volatile storage medium stores operating systems and computer programs. This internal memory provides an environment for the execution of operating systems and computer programs in non-volatile storage media.
- the communication interface of the computer device is used for wired or wireless communication with external terminals.
- the wireless mode can be implemented through WIFI, mobile cellular network, NFC (Near Field Communication) or other technologies.
- the computer program when executed by the processor implements an exposure method.
- the display screen of the computer device may be a liquid crystal display or an electronic ink display.
- the input device of the computer device may be a touch layer covered on the display screen, or may be a button, trackball or touch pad provided on the computer device shell. , it can also be an external keyboard, trackpad or mouse, etc.
- Figure 7 is only a block diagram of a partial structure related to the disclosed solution, and does not constitute a limitation on the computer equipment to which the disclosed solution is applied.
- Specific computer equipment can May include more or fewer parts than shown, or combine certain parts, or have a different arrangement of parts.
- a computer device including a memory and a processor.
- a computer program is stored in the memory.
- the processor executes the computer program, it implements the following steps:
- Step S200 obtain the reference diffraction light intensity for exposing the target layer.
- the diffraction light intensity is the light intensity after the light beam emitted by the light emitter is diffracted by the diffractive optical element;
- Step S400 obtain the actual diffraction light intensity exposed to the preset exposure block of the target layer.
- the preset exposure block is located before the i+1th exposure block, and i is a positive integer;
- Step S600 Calculate the exposure dose compensation value of the i+1th exposure block based on the reference diffraction light intensity and the actual diffraction light intensity;
- Step S800 Compensate the exposure dose of the i+1th exposure block according to the exposure dose compensation value.
- the following steps are also implemented: calculating the exposure dose compensation value of the i+1th exposure block based on the reference diffraction light intensity and the actual diffraction light intensity, including: based on the previous i
- the exposure dose compensation value of the i+1th exposure block is calculated based on the first i actual diffraction light intensities and the reference diffraction light intensity exposed in the exposure block.
- the processor also implements the following steps when executing the computer program: calculating the i+1th exposure block based on the first i actual diffraction light intensities and the reference diffraction light intensity exposed to the previous i exposure block.
- the exposure dose compensation value includes: when i is equal to 1, calculate the i-th sub-dose compensation value based on the intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the reference diffraction light intensity; when i is greater than At 1, the i-th sub-dose compensation value is calculated based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the actual diffraction light intensity exposed to the i-1 exposure block; based on the previous i
- the exposure dose compensation value of the i+1th exposure block is calculated by summing the sub-dose compensation values.
- the processor also implements the following steps when executing the computer program: calculating the exposure time of the i-th block based on the size and exposure speed of the i-th exposure block, and combining the light intensity difference and exposure time, Calculate the i-th sub-dose compensation value.
- the following steps are also implemented: calculating the exposure dose compensation value of the i+1th exposure block based on the reference diffraction light intensity and the actual diffraction light intensity, including: based on the i+1th exposure block The difference in light intensity between the actual diffraction light intensity of the exposure block and the reference diffraction light intensity is calculated to obtain the exposure dose compensation value of the i+1th exposure block.
- the processor also implements the following steps when executing the computer program: calculating the i+1th exposure based on the light intensity difference between the actual diffraction light intensity of the i-th exposure block and the reference diffraction light intensity.
- the exposure dose compensation value of the block includes: for the first i exposure blocks, calculate the exposure duration of each exposure block based on the size and exposure speed corresponding to each exposure block; calculate the first i exposure blocks The average exposure time; based on the light intensity difference and the average exposure time, calculate the exposure dose compensation value of the i+1th exposure block.
- the processor also implements the following steps when executing the computer program: the reference diffraction light intensity is the initial diffraction light intensity detected within the first preset time before the exposure machine performs exposure.
- the first preset time is 0.5min-1.5min.
- the processor when the processor executes the computer program, the following steps are also implemented: before compensating the exposure dose of the i+1th exposure block according to the exposure dose compensation value, the processor further includes: determining whether the exposure dose of the i+1th exposure block is correct. Whether the actual diffraction light intensity of the exposure is lower than the threshold light intensity; when the actual diffraction light intensity of the i-th exposure block is lower than the threshold light intensity, according to the exposure dose compensation value, the i+1-th exposure block Exposure dose compensation.
- the processor executes the computer program, the following steps are also implemented: when the actual diffraction light intensity of the i-th exposure block is not lower than the threshold light intensity, the exposure dose of the i+1-th exposure block is not performed. compensate.
- the processor when the processor executes the computer program, the following steps are also implemented: obtain the diffraction light intensity distribution of the target layer exposed within the second preset time; obtain the critical size distribution of the target layer within the second preset time; according to Diffraction light intensity distribution and critical size distribution are used to obtain the diffraction light intensity value when the critical size exceeds the preset size range as the threshold light intensity.
- a computer-readable storage medium on which a computer program is stored.
- the computer program is executed by a processor, the steps in the above method embodiments are implemented.
- a computer program product including a computer program that implements the steps in each of the above method embodiments when executed by a processor.
- Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc.
- Volatile memory may include random access memory (RAM) or external cache memory.
- RAM can be in many forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM).
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Abstract
本公开涉及一种曝光方法、装置、计算机设备、存储介质和计算机程序产品。所述方法包括：获取对目标层曝光的基准衍射光强，衍射光强为发光器发出的光束经过衍射光学元件衍射后的光强；获取对目标层的预设曝光区块曝光的实际衍射光强，预设曝光区块位于第i+1个曝光区块之前，i为正整数；根据基准衍射光强、实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值；根据曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。本公开实施例能够有效提高曝光图形的关键尺寸的均匀性。
Description
相关申请的交叉引用
本公开要求于2022年06月08日提交中国专利局、申请号为2022106414791、发明名称为“曝光方法、装置、计算机设备、存储介质和计算机程序产品”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
本公开涉及半导体光刻曝光技术领域，特别是涉及一种曝光方法、装置、计算机设备、存储介质和计算机程序产品。
曝光机台为半导体工艺中的常用机台，其可以对各种膜层进行图形化处理等。但是，随着工作时间的延长，机台内部的硬件会有老化的现象，从而影响产品的性能。
在曝光机台内部能量供应这一部分，伴随着内部硬件的老化，曝光的强度会有异常的现象，从而造成曝光图形的关键尺寸异常。
发明内容
根据本公开的各种实施例，提供一种曝光方法、装置、计算机设备、计算机可读存储介质和计算机程序产品。
根据本公开的各种实施例，提供一种曝光方法，包括：
获取对目标层曝光的基准衍射光强，所述衍射光强为光束经过衍射光学元件衍射后的光强；
获取对所述目标层的预设曝光区块曝光的实际衍射光强，所述预设曝光区块位于第i+1个曝光区块之前，i为正整数；
根据所述基准衍射光强、所述实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值；
根据所述曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。
根据一些实施例，根据所述基准衍射光强、所述实际衍射光强计算得到 第i+1个曝光区块的曝光剂量补偿值，包括：
根据对前i个曝光区块曝光的前i个实际衍射光强以及所述基准衍射光强，计算得到第i+1个曝光区块的曝光剂量补偿值。
根据一些实施例，
根据对前i个曝光区块曝光的前i个实际衍射光强以及所述基准衍射光强，计算得到第i+1个曝光区块的曝光剂量补偿值，包括：
当i等于1时，根据对第i个曝光区块曝光的实际衍射光强与所述基准衍射光强的光强差值，计算第i个子剂量补偿值；
当i大于1时，根据对第i个曝光区块曝光的实际衍射光强与对第i-1个曝光区块曝光的实际衍射光强的光强差值，计算第i个子剂量补偿值；
根据前i个子剂量补偿值之和，计算得到第i+1个曝光区块的曝光剂量补偿值。
根据一些实施例，根据第i个曝光区块的尺寸和曝光速度，计算得到第i个区块的曝光时间，结合所述光强差值和所述曝光时间，计算所述第i个子剂量补偿值。
根据一些实施例，
根据所述基准衍射光强、所述实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值，包括：
根据对第i个曝光区块曝光的实际衍射光强与所述基准衍射光强的光强差值，计算得到第i+1个曝光区块的曝光剂量补偿值。
根据一些实施例，根据对第i个曝光区块曝光的实际衍射光强与所述基准衍射光强的光强差值，计算得到第i+1个曝光区块的曝光剂量补偿值，包括：
对于前i个曝光区块，根据每个曝光区块所对应的尺寸和曝光速度，计算得到每个所述曝光区块的曝光时长；
计算前i个曝光区块的平均曝光时长；
根据所述光强差值和所述平均曝光时长，计算所述第i+1个曝光区块的曝光剂量补偿值。
根据一些实施例，所述基准衍射光强为曝光机进行曝光之前，在第一预设时间内检测得到的初始衍射光强。
根据一些实施例，所述第一预设时间为0.5min-1.5min。
根据一些实施例，根据所述曝光剂量补偿值，对第i+1个曝光区块的曝 光剂量进行补偿之前，还包括：
判断对第i个曝光区块曝光的实际衍射光强是否低于阈值光强；
当对第i个曝光区块曝光的实际衍射光强低于所述阈值光强时，根据所述曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。
根据一些实施例，当所述第i个曝光区块的实际衍射光强不低于所述阈值光强时，根据第i+1个曝光区块的原曝光剂量对其进行曝光。
根据一些实施例，所述阈值光强的获取方法，包括：
获取第二预设时间内对所述目标层曝光的衍射光强分布；
获取所述第二预设时间内的所述目标层的关键尺寸分布；
根据所述衍射光强分布以及所述关键尺寸分布，获取使得所述关键尺寸超出预设尺寸范围时的衍射光强值，以作为所述阈值光强。
根据本公开的各种实施例，还提供一种曝光装置，包括：
光源模块，包括发光器以及衍射光学元件；
检测模块，用于检测衍射光强，所述衍射光强为发光器发出的光束经过衍射光学元件衍射后的光强；
控制模块，连接所述光源模块以及所述检测模块，用于根据权利要求1-11任一项所述的方法控制曝光。
根据一些实施例，所述发光器包括激光器，所述光源模块还包括变焦元件、环状光学元件、折射光学元件以及光耦合元件。
根据本公开的各种实施例，还提供一种计算机设备，包括存储器和处理器，所述存储器存储有计算机程序，所述处理器执行所述计算机程序时实现上述任一项所述的方法的步骤。
根据本公开的各种实施例，还提供一种计算机可读存储介质，其上存储有计算机程序，所述计算机程序被处理器执行时实现上述任一项所述的方法的步骤。
根据本公开的各种实施例，还提供一种计算机程序产品，包括计算机程序，该计算机程序被处理器执行时实现上述任一项所述的方法的步骤。
本公开实施例可以/至少具有以下优点：
上述曝光方法、装置、计算机设备、存储介质和计算机程序产品通过基准衍射光强以及实际衍射光强的获取，实现对发光器发出的光束经过衍射光学元件衍射后的光强的监控，并对曝光区块的曝光剂量进行有效补偿。因此，本实施实施例可以提高目标层的各个曝光区块的关键尺寸均匀性。并且，通 过衍射光强的监控，实现对曝光区块的曝光剂量进行补偿，也可以使得曝光机台调试完成后，其可以工作更长的时间，从而提高机台的使用效率，提升产能。此时，可以延长光学器件的寿命。同时，通过衍射光强的监控，也可以用来监控曝光机台的健康状况(特别是光学器件的健康状况)，提前发现机台问题。
本公开的一个或多个实施例的细节在下面的附图和描述中提出。本公开的其他特征、目的和优点将从说明书、附图以及权利要求书变得明显。
图1为一个实施例中曝光方法的流程示意图；
图2为一个实施例中晶圆中的目标层中的曝光区块示意图；
图3为一个实施例中计算得到第i+1个曝光区块的曝光剂量补偿值的流程示意图；
图4为另一个实施例中曝光方法的流程示意图；
图5为一个实施例中曝光装置的结构框图；
图6为一个实施例中光源模块结构示意图；
图7为一个实施例中计算机设备的内部结构图；
图8为一个实施例中曝光过程中，逐步形成在各个曝光区块内的曝光图形的关键尺寸示意图；
图9为一个实施例中衍射光强随时间变化示意图。
为了更好地描述和说明这里公开的那些发明的实施例和/或示例，可以参考一幅或多幅附图。用于描述附图的附加细节或示例不应当被认为是对所公开的发明、目前描述的实施例和/或示例以及目前理解的这些发明的最佳模式中的任何一者的范围的限制。
为了使本公开的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本公开进行进一步详细说明。应当理解，此处描述的具体实施例仅仅用以解释本公开，并不用于限定本公开。
在一个实施例中，请参阅图1，提供了一种曝光方法，包括以下步骤：
步骤S200，获取对目标层曝光的基准衍射光强，衍射光强为发光器发出的光束经过衍射光学元件衍射后的光强；
步骤S400，获取对目标层的预设曝光区块曝光的实际衍射光强，预设曝光区块位于第i+1个曝光区块之前，i为正整数；
步骤S600，根据基准衍射光强、实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值；
步骤S800，根据曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。
其中，在步骤S200中，在曝光过程中，发光器发出的光束需要经过衍射光学元件(Diffractive optical element，DOE)衍射。这里，将光束经过衍射光学元件衍射后的光强称之为衍射光强。
光束经过衍射光学元件衍射后，再经过其他光学元件(如环状光学元件、光耦合元件、折射光学元件等)的作用，最终形成用于曝光的光源。光源的形状有多种(比如柱型光源、环形光光源)。这些光源的形状可以通过许多曝光光学元件组合后形成。
目标层可以为晶圆上形成的任意一个需要进行曝光的膜层。
在进行半导体加工过程中，不同膜层所需要的曝光条件不同时，会涉及到许多不同的曝光光学元件。因此，可以利用不同的DOE(Diffractive optical element，衍射光学元件)对于晶圆上的不同膜层进行曝光。
对目标层曝光的基准衍射光强，为对目标层进行曝光的参考基准，其可以在对目标层进行曝光前，提前获取。
在基准衍射光强下，对目标层进行曝光时，可以得到理想的曝光效果，使得曝光形成的图形的关键尺寸理想。关键尺寸理想可以理解为关键尺寸标准或者接近标准。
作为示例，基准衍射光强可以为曝光机进行曝光之前，在第一预设时间内检测得到的初始衍射光强。第一预设时间可以根据实际需求设置，例如可以设置为0.5min-1.5min。
当然，基准衍射光强也可以通过历史的或者实验的或者模拟的数据获取，这里对此并没有限制。
在步骤S400中，请参阅图2，晶圆中的目标层中，可以设置多个曝光区块10。请参阅图2中的虚线框中的示意，图中的每个曝光区块10对应有三个数据。曝光区块10上面的数字a表示扫描顺序。中间的数字b表示编号。曝光时，光束沿着预设方向(如Y方向)移动而实现曝光，下面的数字表示c光束在每个曝光区块上的曝光速度(即移动速度)，单位为mm/s。
在对目标层的各个曝光区块进行曝光的同时，可以对衍射光强进行检测，从而得到各个曝光区块的实际衍射光强。
这里，可以理解的是，预设曝光区块位于第i+1个曝光区块之前，其可以包括第i+1个曝光区块之前的多个曝光区块，也可以为第i+1个曝光区块之前的一个曝光区块。
在步骤S600中，衍射光强与曝光剂量之间具有相关关系，因此可以通过基准衍射光强、预设曝光区块的实际衍射光强，而计算得到曝光剂量补偿值。在第i+1个曝光区块进行曝光时，该曝光剂量补偿值用于对其曝光剂量进行补偿。
在步骤S800中，可以将曝光剂量补偿值与原曝光剂量相加，从而得到第i+1个曝光区块的曝光剂量。然后，以此曝光剂量对第i+1个曝光区块进行曝光。原曝光剂量即原设定的初始曝光剂量，每个曝光区块均具有一个初始曝光剂量。
在本实施例中，通过基准衍射光强以及实际衍射光强的获取，实现对发光器发出的光束经过衍射光学元件衍射后的光强的监控，并对曝光区块的曝光剂量进行有效补偿。因此，本实施实施例可以提高目标层的各个曝光区块的关键尺寸均匀性。
并且，通过衍射光强的监控，实现对曝光区块的曝光剂量进行补偿，也可以使得曝光机台调试完成后，其可以工作更长的时间，从而提高机台的使用效率，提升产能。此时，可以延长光学器件的寿命。
同时，通过衍射光强的监控，也可以用来监控曝光机台的健康状况(特别是光学器件的健康状况)，提前发现机台问题。
在一个实施例中，在步骤S600包括：
步骤S610，根据对前i个曝光区块曝光的前i个实际衍射光强以及基准衍射光强，计算得到第i+1个曝光区块的曝光剂量补偿值。
基准衍射光强可以在对目标层进行曝光前获取。
在对目标层进行曝光的过程中，各曝光区块依序逐个被扫描曝光。在对每个曝光区块进行扫描曝光的同时，还可以对其衍射光强进行检测，从而得到各个曝光区块的实际衍射光强。
前i个曝光区块为在第i+1个曝光区块之前被曝光的所有曝光区块。
在本实施例中，根据第i+1个曝光区块之前被曝光的所有曝光区块的实际衍射光强以及基准衍射光强，可以对曝光过程中的衍射光强的变化进行详 细监控。据此计算得到第i+1个曝光区块的曝光剂量补偿值可以更加精准。
在一个实施例中，请参阅图3，步骤S610包括：
步骤S611，当i等于1时，根据对第i个曝光区块曝光的实际衍射光强与基准衍射光强的光强差值，计算第i个子剂量补偿值；
步骤S612，当i大于1时，根据对第i个曝光区块曝光的实际衍射光强与对第i-1个曝光区块曝光的实际衍射光强的光强差值，计算第i个子剂量补偿值；
步骤S613，根据前i个子剂量补偿值之和，计算得到第i+1个曝光区块的曝光剂量补偿值。
其中，在步骤S611中，第1个子剂量补偿值与第1个曝光区块曝光的实际衍射光强与基准衍射光强int
0的差值相关。
在步骤S612中，第i个子剂量补偿值与第i个曝光区块曝光的实际衍射光强与对第i-1个曝光区块曝光的实际衍射光强的差值相关。
作为示例，步骤S611以及步骤S612中，可以根据第i个曝光区块的尺寸和曝光速度，计算得到第i个区块的曝光时间，结合光强差值和曝光时间，计算第i个子剂量补偿值。
可以理解的是，曝光区块的尺寸为其在曝光光束的移动方向(如图中的Y方向)上的长度尺寸。曝光区块的曝光速度为曝光光束在其上移动的速度。
当然，各个曝光区块的曝光时间也可以存储在存储器中，而不必通过计算获取。
此时，第1个子剂量补偿值d
1可以表示为：
d
1＝abs(int
1-int
0)*t
1
其中，abs表示对括号内的值取绝对值，int
1表示第1个曝光区块曝光的实际衍射光强，int
0表示基准衍射光强，t
1表示第1个区块的曝光时间。
第i个子剂量补偿值d
i可以表示为：
d
i＝abs(int
i-int
i-1)*t
i
其中，abs表示对括号内的值取绝对值，int
i表示第i个曝光区块曝光的实际衍射光强，int
i-1表示第i-1个曝光区块曝光的实际衍射光强，t
i表示第i个区块的曝光时间。
在步骤S613中，第i+1个曝光区块的曝光剂量补偿值δ
i+1可以表示为：
δ
i+1＝Σd
m，其中m从1取值至i，Σd
m表示前i个子剂量补偿值之和。
可以理解的是，第2个曝光区块的曝光剂量补偿值δ
2＝d
1。
在本实施例中，首先根据第i+1个曝光区块之前的i个曝光区块计算获取i个子剂量补偿值。然后再将i个子剂量补偿值相加而得到第i+1个曝光区块的曝光剂量补偿值。此时，可以将第i+1个曝光区块之前的各个曝光区块的衍射光强变化均考虑在内，从而提高补偿精确性。
各个曝光区块的曝光时间不同，由曝光时间与光强变化的乘积获取各个子剂量补偿值，可以精准反应各个曝光区块的衍射光强变化引起的曝光剂量变化，从而可以对第i+1个曝光区块的曝光剂量进行有效补偿。
在其他实施例中，步骤S610也可以通过其他方式计算得到第i+1个曝光区块的曝光剂量补偿值。例如，第i+1个曝光区块的曝光剂量补偿值δ
i+1可以表示为：
δ
i+1＝(abs(int
1-int
0)+Σabs(int
i-int
i-1))*t
均，其中，abs表示对括号内的值取绝对值，int
1表示第1个曝光区块曝光的实际衍射光强，int
0表示基准衍射光强，int
i表示第i个曝光区块曝光的实际衍射光强，int
i-1表示第i-1个曝光区块曝光的实际衍射光强，t
均表示前i个曝光区块的平均曝光时长，i为大于1的正整数，m从1取值至i。
在一个实施例中，步骤S600包括：
步骤S620，根据对第i个曝光区块曝光的实际衍射光强与基准衍射光强的光强差值，计算得到第i+1个曝光区块的曝光剂量补偿值；
在本实施例中，直接利用前一个曝光区块的实际衍射光强与基准衍射光强的光强差值，计算后一个曝光区块的曝光剂量补偿值，从而可以简化补偿值的计算过程，提高曝光效率。
在一个实施例中，步骤S620包括：
步骤S621，对于前i个曝光区块，根据每个曝光区块所对应的尺寸和曝光速度，计算得到每个曝光区块的曝光时长；
步骤S622，计算前i个曝光区块的平均曝光时长；
步骤S623，根据光强差值和平均曝光时长，计算第i+1个曝光区块的曝光剂量补偿值。
其中，在步骤S621中，曝光区块的尺寸为其在曝光光束的移动方向(如图中的Y方向)上的长度尺寸。曝光区块的曝光速度为曝光光束其上移动的速度。
对于前i个曝光区块，均获取对应的曝光时长。每个曝光区块的曝光时长与其尺寸和曝光速度相关。
在步骤S622中，前i个曝光区块的平均曝光时长t
均可以表示为：
t
均＝Σt
m/i，其中m从1取值至i，t
m表示第m个曝光区块的曝光时长，Σt
m表示前i个曝光区块的曝光时长之和。
在步骤S623中，根据第i个曝光区块曝光的实际衍射光强与基准衍射光强的光强差值和平均曝光时长，计算第i+1个曝光区块的曝光剂量补偿值。
第i+1个曝光区块的曝光剂量补偿值δ
i+1可以表示为：
δ
i+1＝abs(int
i-int
0)*t
均＝abs(int
i-int
0)*(Σt
m/i)，
其中，abs表示对括号内的值取绝对值，int
i表示第i个曝光区块曝光的实际衍射光强，int
0表示基准衍射光强。
在本实施例中，通过平均曝光时长、第i个曝光区块的实际衍射光强相对于基准衍射光强的变化值(即第i个曝光区块曝光的实际衍射光强与基准衍射光强的光强差值)，可以相对准确地获取第i+1个曝光区块的曝光剂量补偿值。
当然，在其他实施例中，步骤S620也可以通过其他方式获取第i+1个曝光区块的曝光剂量补偿值。例如，也可以为在前i个曝光区块的i个曝光时长中，选取中位数，并以此中位数与第i个曝光区块的实际衍射光强相对于基准衍射光强的变化值相乘，从而计算得到第i+1个曝光区块的曝光剂量补偿值。
在一个实施例中，请参阅图4，步骤S800之前，还包括：
步骤S700，判断对第i个曝光区块曝光的实际衍射光强是否低于阈值光强；
阈值光强为使得曝光形成的图形的关键尺寸可以控制在预设尺寸范围的衍射光强的阈值。衍射光强变化影响关键尺寸值。在衍射光强降至低于阈值光强，得到的关键尺寸值就可能会超出预设尺寸范围。
预设尺寸范围可以根据实际需求设置。比如想要控制得到的标准关键尺寸值是
但是在
的范围内的关键尺寸都是可以接受的。则此时
可以设置为预设尺寸范围。
当对第i个曝光区块曝光的实际衍射光强低于阈值光强时，进入步骤S800，根据曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。
对第i个曝光区块曝光的实际衍射光强低于阈值光强时，说明由于衍射光学元件老化等原因，已导致衍射光强衰减较大，从而使得曝光形成的图形的关键尺寸难以控制在预设尺寸范围。此时，根据曝光剂量补偿值，对第i+1 个曝光区块的曝光剂量进行补偿，从而可以有效防止第i+1个曝光区块的关键尺寸超出预设尺寸范围。
具体地，请参阅图8，当对第i个曝光区块曝光的实际衍射光强低于阈值光强时，其曝光图形的关键尺寸超出预设尺寸范围
此时，进入步骤S800，根据曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿，从而会使得第i+1个曝光区块的曝光图形的关键尺寸回到预设尺寸范围内。因此，本实施例可以很好的将曝光图形的关键尺寸控制在预设尺寸范围。
在一个实施例中，当第i个曝光区块的实际衍射光强不低于阈值光强时，不对第i+1个曝光区块的曝光剂量进行补偿，即可以执行步骤S900，根据第i个曝光区块的原曝光剂量对其进行曝光。
对第i个曝光区块曝光的实际衍射光强不低于阈值光强时，说明衍射光强虽然有一定程度衰减，但是其仍在可以接受的范围内。此时根据原曝光剂量进行曝光，形成的图形的关键尺寸比较容易控制在预设尺寸范围。此时，可以不对第i+1个曝光区块的曝光剂量进行补偿。
本实施例中，可以根据前一个曝光区块的衍射光强衰减程度，而判断是否对后一个曝光区块的曝光剂量进行补偿，从而可以有效提高曝光效率。
在一个实施例中，阈值光强的获取方法，包括：
步骤S20，获取第二预设时间内对目标层曝光的衍射光强分布；
步骤S40，获取第二预设时间内的目标层的关键尺寸分布；
步骤S60，根据衍射光强分布以及关键尺寸分布，获取使得关键尺寸超出预设尺寸范围时的衍射光强值，以作为阈值光强。
在步骤S20中，第二预设时间可以根据实际需求设置。例如，请参阅图9，可以设置第二预设时间为四个月。在第二预设时间内衍射光强最终衰减至5685.74cd。之后可以更换光学元件，从而使得衍射光强达到7256.73cd。
对目标层曝光的衍射光强可以通过检测获取。具体地，可以在第二预设时间内，每隔一段时间对目标层曝光的衍射光强进行一次检测。每次检测可以对目标层曝光的衍射光强进行多回测量，然后取均值，该次衍射光强值。
在步骤S40中，可以在第二预设时间内，对目标层的同一个或同一组曝光图形的关键尺寸进行监控，从而得到第二预设时间内的目标层的关键尺寸分布。
在步骤S60中，可以通过衍射光强分布以及关键尺寸分布的对比，获取使得关键尺寸超出预设尺寸范围时的衍射光强值，以作为阈值光强。
这里超出预设尺寸范围，可以为是低于预设尺寸范围的最低值，也可以是高于预设尺寸范围的最高值。
应该理解的是，虽然图1、图3、图4的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图1、图3、图4中的至少一部分步骤可以包括多个步骤或者多个阶段，这些步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤中的步骤或者阶段的至少一部分轮流或者交替地执行。
在一个实施例中，还提供一种曝光装置，请参阅图5，包括：光源模块100、检测模块200以及控制模块300。
请参阅图6，光源模块100包括发光器110以及衍射光学元件120。发光器110可以包括激光器等。衍射光学元件120对发光器发出的光束进行衍射。此外，光源模块100还可以包括其他光学元件。
作为示例，光源模块100还可以包括变焦元件130、环状光学元件140、光耦合元件150、折射光学元件160等。发光器110发出的光束经过衍射光学元件120衍射后，可以再经过变焦元件130、环状光学元件140、光耦合元件150、折射光学元件160等的作用，最终形成用于曝光的光源。
检测模块200用于检测衍射光强，例如其可以为光强度测量仪。衍射光强为发光器发出的光束经过衍射光学元件衍射后的光强。
控制模块300连接光源模块100以及检测模块200，用于根据上述方法控制曝光。
关于曝光装置的具体限定可以参见上文中对于曝光方法的限定，在此不再赘述。上述曝光装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于计算机设备中的处理器中，也可以以软件形式存储于计算机设备中的存储器中，以便于处理器调用执行以上各个模块对应的操作。
在一个实施例中，提供了一种计算机设备，该计算机设备可以是终端，其内部结构图可以如图7所示。该计算机设备包括通过系统总线连接的处理器、存储器、通信接口、显示屏和输入装置。其中，该计算机设备的处理器用于提供计算和控制能力。该计算机设备的存储器包括非易失性存储介质、 内存储器。该非易失性存储介质存储有操作系统和计算机程序。该内存储器为非易失性存储介质中的操作系统和计算机程序的运行提供环境。该计算机设备的通信接口用于与外部的终端进行有线或无线方式的通信，无线方式可通过WIFI、移动蜂窝网络、NFC(近场通信)或其他技术实现。该计算机程序被处理器执行时以实现一种曝光方法。该计算机设备的显示屏可以是液晶显示屏或者电子墨水显示屏，该计算机设备的输入装置可以是显示屏上覆盖的触摸层，也可以是计算机设备外壳上设置的按键、轨迹球或触控板，还可以是外接的键盘、触控板或鼠标等。
本领域技术人员可以理解，图7中示出的结构，仅仅是与本公开方案相关的部分结构的框图，并不构成对本公开方案所应用于其上的计算机设备的限定，具体的计算机设备可以包括比图中所示更多或更少的部件，或者组合某些部件，或者具有不同的部件布置。
在一个实施例中，提供了一种计算机设备，包括存储器和处理器，存储器中存储有计算机程序，该处理器执行计算机程序时实现以下步骤：
步骤S200，获取对目标层曝光的基准衍射光强，衍射光强为发光器发出的光束经过衍射光学元件衍射后的光强；
步骤S400，获取对目标层的预设曝光区块曝光的实际衍射光强，预设曝光区块位于第i+1个曝光区块之前，i为正整数；
步骤S600，根据基准衍射光强、实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值；
步骤S800，根据曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：根据基准衍射光强、实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值，包括：根据对前i个曝光区块曝光的前i个实际衍射光强以及基准衍射光强，计算得到第i+1个曝光区块的曝光剂量补偿值。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：根据对前i个曝光区块曝光的前i个实际衍射光强以及基准衍射光强，计算得到第i+1个曝光区块的曝光剂量补偿值，包括：当i等于1时，根据对第i个曝光区块曝光的实际衍射光强与基准衍射光强的光强差值，计算第i个子剂量补偿值；当i大于1时，根据对第i个曝光区块曝光的实际衍射光强与对第i-1个曝光区块曝光的实际衍射光强的光强差值，计算第i个子剂量补偿值；根据前i 个子剂量补偿值之和，计算得到第i+1个曝光区块的曝光剂量补偿值。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：根据第i个曝光区块的尺寸和曝光速度，计算得到第i个区块的曝光时间，结合光强差值和曝光时间，计算第i个子剂量补偿值。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：根据基准衍射光强、实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值，包括：根据对第i个曝光区块曝光的实际衍射光强与基准衍射光强的光强差值，计算得到第i+1个曝光区块的曝光剂量补偿值。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：根据对第i个曝光区块曝光的实际衍射光强与基准衍射光强的光强差值，计算得到第i+1个曝光区块的曝光剂量补偿值，包括：对于前i个曝光区块，根据每个曝光区块所对应的尺寸和曝光速度，计算得到每个曝光区块的曝光时长；计算前i个曝光区块的平均曝光时长；根据光强差值和平均曝光时长，计算第i+1个曝光区块的曝光剂量补偿值。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：基准衍射光强为曝光机进行曝光之前，在第一预设时间内检测得到的初始衍射光强。
在一个实施例中，第一预设时间为0.5min-1.5min。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：根据曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿之前，还包括：判断对第i个曝光区块曝光的实际衍射光强是否低于阈值光强；当对第i个曝光区块曝光的实际衍射光强低于阈值光强时，根据曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：当第i个曝光区块的实际衍射光强不低于阈值光强时，不对第i+1个曝光区块的曝光剂量进行补偿。
在一个实施例中，处理器执行计算机程序时还实现以下步骤：获取第二预设时间内对目标层曝光的衍射光强分布；获取第二预设时间内的目标层的关键尺寸分布；根据衍射光强分布以及关键尺寸分布，获取使得关键尺寸超出预设尺寸范围时的衍射光强值，以作为阈值光强。
在一个实施例中，提供了一种计算机可读存储介质，其上存储有计算机程序，计算机程序被处理器执行时实现上述各方法实施例中的步骤。
在一个实施例中，提供了一种计算机程序产品，包括计算机程序，该计 算机程序被处理器执行时实现上述各方法实施例中的步骤。
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各方法的实施例的流程。其中，本公开所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和易失性存储器中的至少一种。非易失性存储器可包括只读存储器(Read-Only Memory，ROM)、磁带、软盘、闪存或光存储器等。易失性存储器可包括随机存取存储器(Random Access Memory，RAM)或外部高速缓冲存储器。作为说明而非局限，RAM可以是多种形式，比如静态随机存取存储器(Static Random Access Memory，SRAM)或动态随机存取存储器(Dynamic Random Access Memory，DRAM)等。
以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本公开的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本公开构思的前提下，还可以做出若干变形和改进，这些都属于本公开的保护范围。因此，本公开专利的保护范围应以所附权利要求为准。
Claims (16)
- 一种曝光方法，包括：获取对目标层曝光的基准衍射光强，所述衍射光强为光束经过衍射光学元件衍射后的光强；获取对所述目标层的预设曝光区块曝光的实际衍射光强，所述预设曝光区块位于第i+1个曝光区块之前，i为正整数；根据所述基准衍射光强、所述实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值；根据所述曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。
- 根据权利要求1所述的曝光方法，其中，根据所述基准衍射光强、所述实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值，包括：根据对前i个曝光区块曝光的前i个实际衍射光强以及所述基准衍射光强，计算得到第i+1个曝光区块的曝光剂量补偿值。
- 根据权利要求2所述的曝光方法，其中，当i等于1时，根据对第i个曝光区块曝光的实际衍射光强与所述基准衍射光强的光强差值，计算第i个子剂量补偿值；当i大于1时，根据对第i个曝光区块曝光的实际衍射光强与对第i-1个曝光区块曝光的实际衍射光强的光强差值，计算第i个子剂量补偿值；根据前i个子剂量补偿值之和，计算得到第i+1个曝光区块的曝光剂量补偿值。
- 根据权利要求3所述的曝光方法，其中，根据第i个曝光区块的尺寸和曝光速度，计算得到第i个区块的曝光时间，结合所述光强差值和所述曝光时间，计算所述第i个子剂量补偿值。
- 根据权利要求1所述的曝光方法，其中，根据所述基准衍射光强、所述实际衍射光强计算得到第i+1个曝光区块的曝光剂量补偿值，包括：根据对第i个曝光区块曝光的实际衍射光强与所述基准衍射光强的光强差值，计算得到第i+1个曝光区块的曝光剂量补偿值。
- 根据权利要求5所述的曝光方法，其中，对于前i个曝光区块，根据每个曝光区块所对应的尺寸和曝光速度，计算得到每个所述曝光区块的曝光时长；计算前i个曝光区块的平均曝光时长；根据所述光强差值和所述平均曝光时长，计算所述第i+1个曝光区块的曝光剂量补偿值。
- 根据权利要求1所述的曝光方法，其中，所述基准衍射光强为曝光机进行曝光之前，在第一预设时间内检测得到的初始衍射光强。
- 根据权利要求6所述的曝光方法，其中，所述第一预设时间为0.5min-1.5min。
- 根据权利要求1-8任一项所述的曝光方法，其中，根据所述曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿之前，还包括：判断对第i个曝光区块曝光的实际衍射光强是否低于阈值光强；当对第i个曝光区块曝光的实际衍射光强低于所述阈值光强时，根据所述曝光剂量补偿值，对第i+1个曝光区块的曝光剂量进行补偿。
- 根据权利要求9所述的曝光方法，其中，当所述第i个曝光区块的实际衍射光强不低于所述阈值光强时，根据第i+1个曝光区块的原曝光剂量对其进行曝光。
- 根据权利要求9所述的曝光方法，其中，所述阈值光强的获取方法，包括：获取第二预设时间内对所述目标层曝光的衍射光强分布；获取所述第二预设时间内的所述目标层的关键尺寸分布；根据所述衍射光强分布以及所述关键尺寸分布，获取使得所述关键尺寸超出预设尺寸范围时的衍射光强值，以作为所述阈值光强。
- 一种曝光装置，包括：光源模块，包括发光器以及衍射光学元件；检测模块，用于检测衍射光强，所述衍射光强为发光器发出的光束经过衍射光学元件衍射后的光强；控制模块，连接所述光源模块以及所述检测模块，用于根据权利要求1-11任一项所述的方法控制曝光。
- 根据权利要求12所述的曝光装置，其中，所述发光器包括激光器，所述光源模块还包括变焦元件、环状光学元件、折射光学元件以及光耦合元件。
- 一种计算机设备，包括存储器和处理器，所述存储器存储有计算机程序，所述处理器执行所述计算机程序时实现权利要求1至11中任一项所述的方法的步骤。
- 一种计算机可读存储介质，其上存储有计算机程序，所述计算机程序被处理器执行时实现权利要求1至11中任一项所述的方法的步骤。
- 一种计算机程序产品，包括计算机程序，该计算机程序被处理器执行时实现权利要求1至11中任一项所述的方法的步骤。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5674652A (en) * | 1991-02-28 | 1997-10-07 | University Of New Mexico | Diffracted light from latent images in photoresist for exposure control |
| US20020005940A1 (en) * | 2000-05-22 | 2002-01-17 | Nikon Corporation | Exposure apparatus, method for manufacturing thereof, method for exposing and method for manufacturing microdevice |
| JP2006041549A (ja) * | 2005-09-09 | 2006-02-09 | Toshiba Corp | 半導体デバイスの製造方法 |
| CN112684670A (zh) * | 2020-12-29 | 2021-04-20 | 中山新诺科技股份有限公司 | 一种自动聚焦曝光方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5674652A (en) * | 1991-02-28 | 1997-10-07 | University Of New Mexico | Diffracted light from latent images in photoresist for exposure control |
| US20020005940A1 (en) * | 2000-05-22 | 2002-01-17 | Nikon Corporation | Exposure apparatus, method for manufacturing thereof, method for exposing and method for manufacturing microdevice |
| JP2006041549A (ja) * | 2005-09-09 | 2006-02-09 | Toshiba Corp | 半導体デバイスの製造方法 |
| CN112684670A (zh) * | 2020-12-29 | 2021-04-20 | 中山新诺科技股份有限公司 | 一种自动聚焦曝光方法 |
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