WO2023226796A1 - 发光器件、显示面板及显示装置 - Google Patents

发光器件、显示面板及显示装置 Download PDF

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WO2023226796A1
WO2023226796A1 PCT/CN2023/093979 CN2023093979W WO2023226796A1 WO 2023226796 A1 WO2023226796 A1 WO 2023226796A1 CN 2023093979 W CN2023093979 W CN 2023093979W WO 2023226796 A1 WO2023226796 A1 WO 2023226796A1
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light
emitting
layer
emitting device
cathode
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PCT/CN2023/093979
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English (en)
French (fr)
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宋广军
张洪斌
陈文斌
余兆伟
韦钦河
林爽
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Publication of WO2023226796A1 publication Critical patent/WO2023226796A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • Embodiments of the present disclosure relate to but are not limited to the field of display technology, and specifically relate to a light-emitting device, a display panel and a display device.
  • OLED Organic Light-Emitting Diode
  • Embodiments of the present disclosure provide a light-emitting device, a display panel and a display device.
  • the technical solution is as follows:
  • An embodiment of the first aspect of the present disclosure provides a light-emitting device having a first sub-pixel region, a second sub-pixel region and a third sub-pixel region.
  • the light-emitting device includes a cathode, an anode, and a cathode disposed between the cathode and the anode.
  • the light-emitting structure between the anodes, the light-emitting structure includes a light-emitting layer, the light-emitting layer includes a single first light-emitting body located in the first sub-pixel area, and at least one layer located in the second sub-pixel area and arranged in a stack.
  • Two second light-emitting bodies, and at least two third light-emitting bodies located in the third sub-pixel area and arranged in a stack the cathode is used to provide electrons, and the anode is used to provide holes.
  • a light-emitting device provided according to an embodiment of the present disclosure may also have the following additional technical features:
  • the electrons provided by the cathode and the holes provided by the anode are recombined into excitons by the first light-emitting body, causing the first light-emitting body to emit blue light.
  • the first luminous body emits blue light, or the first luminous body emits red light, or the first luminous body emits green light.
  • the light-emitting layer further includes a charge generation layer disposed between every two adjacent second light-emitting bodies and between every two adjacent third light-emitting bodies, The charge generation layer is used to generate holes that move toward the cathode and electrons that move toward the anode under the action of an electric field between the cathode and the anode.
  • the charge generation layer only covers the second light emitter and the third light emitter, and the charge generation layer is separated from the first light emitter.
  • the charge generation layer includes a body, a first hole transport layer and a first electron transport layer, the first hole transport layer is disposed on a third portion of the body close to the cathode. One side; the first electron transport layer is disposed on the second side of the body close to the anode.
  • the charge generation layer further includes: a hole blocking layer, or an electron blocking layer, or a hole blocking layer and an electron blocking layer, wherein: the hole blocking layer is disposed on the first between the side of an electron transport layer close to the anode and the second luminous body and the third luminous body; the electron blocking layer is disposed on the side of the first hole transport layer close to the cathode Between one side and the second luminous body and the third luminous body.
  • the light-emitting structure further includes an electron injection layer, a second electron transport layer, a hole injection layer and a second hole transport layer, the electron injection layer being disposed close to the cathode.
  • the second electron transport layer is provided between the electron injection layer and the light-emitting layer
  • the hole injection layer is provided on the side of the anode close to the light-emitting layer,
  • the second hole transport layer is disposed between the hole injection layer and the light emitting layer.
  • the thickness of the first light emitter is greater than 5 nm and less than 100 nm.
  • the thickness of the first light emitter is greater than 15 nm and less than 30 nm.
  • the thickness of the first luminous body is consistent with that of one of the at least two second luminous bodies.
  • the thickness of the first luminous body is consistent with that of one of the at least two third luminous bodies.
  • the cathode is Mg:Ag
  • the anode is a stacked indium tin oxide ITO/Ag/ITO.
  • An embodiment of the second aspect of the present disclosure provides a display panel including the light-emitting device provided according to the embodiment of the first aspect of the present disclosure.
  • An embodiment of the third aspect of the present disclosure provides a display device, including the display panel provided according to the embodiment of the second aspect of the present disclosure.
  • Figure 1 is a first structural schematic diagram of a light-emitting device provided by an embodiment of the present disclosure
  • Figure 2 is a comparison chart of color shift curves of different light-emitting devices provided by embodiments of the present disclosure
  • Figure 3 is a second structural schematic diagram of a light-emitting device provided by an embodiment of the present disclosure.
  • Figure 4 is a third structural schematic diagram of a light-emitting device provided by an embodiment of the present disclosure.
  • Figure 5 is a fourth structural schematic diagram of a light-emitting device provided by an embodiment of the present disclosure.
  • Figure 6 is a fifth structural schematic diagram of a light-emitting device provided by an embodiment of the present disclosure.
  • Figure 7 is a schematic structural diagram of a sixth type of light-emitting device provided by an embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of a seventh structure of a light-emitting device provided by an embodiment of the present disclosure.
  • OLEDs Organic light-emitting diodes
  • OLED currently has some problems. For example, its light-emitting devices have low luminous efficiency or high voltage, which results in high power consumption and short lifespan of the light-emitting devices. This is a bottleneck that needs to be overcome in this field.
  • the light-emitting devices in OLEDs generally have a single-layer structure.
  • the light-emitting devices with this structure are called single-layer devices. They have low luminous efficiency, short lifespan and high power consumption.
  • a stacked device is proposed, which has a stacked arrangement of light emitters.
  • each R/G/B monochrome of each pixel unit is designed to have two light emitters stacked one above the other, like this
  • the structure can better improve the efficiency and life of the device.
  • the cross-voltage required by this stacked device is compared with the cross-voltage required by a single-layer device with only a single layer of light emitters.
  • the lighting-on voltage of the light-emitting body corresponding to each R/G/B single color of each pixel unit is about twice the lighting-on voltage of the light-emitting body of the single-layer device, so despite the The efficiency is high, but its actual power consumption benefit is not large.
  • an embodiment of the first aspect of the present disclosure provides a light-emitting device.
  • the light-emitting device has a first sub-pixel area, a second sub-pixel area and a third sub-pixel area.
  • the light-emitting device includes Cathode 10, anode 30, and a light-emitting structure 20 disposed between the cathode 10 and the anode 30.
  • the light-emitting structure 20 includes a light-emitting layer 21, and the light-emitting layer 21 includes a single first light-emitting element located in the first sub-pixel region.
  • the body 211 at least two second light-emitting bodies 212 located in the second sub-pixel area and arranged in a stack, and at least two third light-emitting bodies 213 located in the third sub-pixel area and arranged in a stack, the cathode 10 is used to provide electrons, and the anode 30 is used to provide holes.
  • the cathode 10 can be Mg:Ag
  • the anode 30 can be a stacked ITO (Indium-Tin Oxide, indium tin oxide)/Ag/ITO
  • the first luminous body 211 the second luminous body 212
  • the third luminous body 211 the third luminous body 211.
  • the three light emitters 213 can respectively emit three different colors of light under power-on conditions, such as red, green, and blue, to meet the needs of different products.
  • a light-emitting device provided according to an embodiment of the first aspect of the present disclosure includes a cathode 10, an anode 30, and a light-emitting structure 20 disposed between the cathode 10 and the anode 30.
  • the light-emitting structure 20 includes a light-emitting layer 21, and the light-emitting layer 21 includes a A single first illuminant 211 in the first sub-pixel area, at least two second illuminants 212 located in the second sub-pixel area and arranged in a stack, and at least two third illuminants in the third sub-pixel area and arranged in a stack. 213.
  • the light-emitting device in the embodiment of the present disclosure has at least two second illuminants 212 stacked in the second sub-pixel area, and at least two third illuminants 213 stacked in the third sub-pixel area, so that A structure of a stacked device is formed in the second sub-pixel area and the third sub-pixel area, thereby utilizing the structural advantages of the stacked device to improve the overall luminous efficiency and lifespan of the light-emitting device; on the other hand, a single layer is provided in the first sub-pixel area
  • the structure of a first light-emitting body 211 that is, a single-layer device structure is formed in the first sub-pixel region to reduce the requirements for the lighting voltage of the first light-emitting body 211. In this way, the overall luminous efficiency of the light-emitting device can be improved. While extending the service life, it also reduces the overall cross-voltage, thereby reducing the power consumption of the light-emitting device.
  • the electrons provided by the cathode 10 and the holes provided by the anode 30 recombine into excitons in the first light-emitting body 211, causing the first light-emitting body 211 to emit blue light.
  • the first light-emitting body 211 arranged in the form of a single-layer structure is a light-emitting body (indicated by "B” in the figure) that emits blue light under powered conditions.
  • "R” and “G” in the figure are respectively Indicates a luminous body that emits red light under powered conditions and a luminous body that emits green light under powered conditions.
  • the lighting voltage of B is particularly high. It greatly increases the overall cross-voltage, and when the backplanes are all made of LTPS (Low Temperature Poly-silicon, low-temperature polysilicon), the measured lifespan of the structure is only significantly improved by the lifespan of R and G, and the lifespan of B is significantly improved. The actual lifespan differs little from the lifespan when it is configured as a single-layer device. Therefore, using the luminous body that emits blue light under powered conditions as the first luminous body 211 in a single-layer structure can improve the overall luminous efficiency and life of the light-emitting device and at the same time better reduce the overall cross-voltage. , thereby further reducing the power consumption of the light-emitting device and improving the performance of the light-emitting device.
  • LTPS Low Temperature Poly-silicon, low-temperature polysilicon
  • the luminescent layer 21 further includes charges disposed between every two adjacent second luminous bodies 212 and between every two adjacent third luminous bodies 213 .
  • the charge generation layer 100 is used to generate holes that move toward the cathode 10 and electrons that move toward the anode 30 under the action of the electric field between the cathode 10 and the anode 30 .
  • the second sub-pixel area has only two second illuminants 212 stacked on top of each other, and a charge generation layer 100 is disposed between the two second illuminants 212 .
  • the generated holes moving in the direction closer to the cathode 10 and the electrons provided by the cathode 10 are combined into excitons in the first second light-emitting body 212 located on the side of the charge generation layer 100 close to the cathode 10, so that the first The second luminous body 212 emits light; the electrons generated by the charge generation layer 100 and moving in the direction close to the anode 30 and the holes provided by the anode 30 are located on the second side of the charge generation layer 100 close to the anode 30
  • the two illuminants 212 recombine into excitons, causing the second illuminant 212 to emit light. Every two adjacent second light emitters 212 and every two adjacent third light emitters 213 are connected in series through a charge generation layer 100 to form a stacked device structure.
  • the charge generation layer 100 only covers the second light emitter 212 and the third light emitter 213 , and is separated from the first light emitter 211 .
  • FMM Fe Metal Mask, high-precision metal mask
  • FMM can be used to isolate the first luminous body 211, and then evacuate the first light-emitting body 211 after the evaporation of the charge generation layer 100 is completed.
  • FMM so that the evaporated charge generation layer 100 only covers the second luminous body 212 and the third luminous body 213 and is separated from the first luminous body 211 .
  • the first luminous body 211 arranged in a single-layer structure, and at the same time reduce the low-grayscale crosstalk phenomenon caused by the lateral leakage of the first luminous body 211, and improve the low-grayscale crosstalk caused by the first luminous body 211.
  • 211 causes the second illuminant 212 and the third illuminant 213 to emit light, thus improving the low grayscale image quality.
  • the charge generation layer 100 includes a body (Charge Generation Layer, CGL) 101, a first hole transport layer (Hole Transport Layer, HTL) 102 and a first electron transport layer (Electron Transport Layer, ETL) 103, the first hole transport layer 102 is disposed on the first side of the body 101 close to the cathode 10; the first electron transport layer 103 is disposed on the second side of the body 101 close to the anode 30.
  • CGL Charge Generation Layer
  • HTL Hole Transport Layer
  • ETL Electro Transport Layer
  • the holes generated by the body 101 are transported to the second luminous body 212 and the third luminous body 213 located close to the first side of the body 101 through the first hole transport layer 102; the electrons generated by the body 101 pass through the first electron transport layer 103 It is transmitted to the second luminous body 212 and the third luminous body 213 located close to the second side of the body 101 .
  • the charge generation layer 100 further includes: a hole blocking layer (HBL) 104 , or as shown in FIG. 8 , the charge generation layer 100 further includes: electrons Barrier layer (Electron Block Layer, EBL) 111.
  • the charge generation layer 100 further includes: a hole blocking layer 104 and an electron blocking layer 111 , wherein the hole blocking layer 104 is disposed on a side of the first electron transport layer 103 close to the anode 30 and the first electron blocking layer 111 .
  • the electron blocking layer 111 is provided between the side of the first hole transport layer 102 close to the cathode 10 and the second light-emitting body 212 and the third light-emitting body 213.
  • the light-emitting structure 20 further includes an electron injection layer (Electron Injection Layer, EIL) 22, a second electron transport layer 23, and a hole injection layer (Hole Inject Layer, HIL). 25 and the second hole transport layer 24, the electron injection layer 22 is disposed on the side of the cathode 10 close to the luminescent layer 21, the second electron transport layer 23 is disposed between the electron injection layer 22 and the luminescent layer 21, the hole injection layer 25 is arranged close to the anode 30 On one side of the light-emitting layer 21 , the second hole transport layer 24 is provided between the hole injection layer 25 and the light-emitting layer 21 .
  • EIL electron injection Layer
  • HIL hole injection layer
  • the electrons generated by the cathode 10 are led to the light-emitting layer 21 through the electron injection layer 22 and the second electron transport layer 23 in sequence.
  • the holes generated by the anode 30 are led to the light-emitting layer through the hole injection layer 25 and the second hole transport layer 24 in sequence.
  • the layer 21 provides charges to form excitons for the first luminous body 211 and at least part of the second luminous body 212 and at least part of the third luminous body 213 in the luminescent layer 21 .
  • the thickness of the first light emitter 211 is greater than 5 nm and less than 100 nm.
  • B is used as the first luminous body 211 to design a single-layer device structure, and the film thickness is appropriately adjusted so that the thickness of the first luminous body 211 is greater than 15 nm and less than 30 nm, as shown in Figure 1 A structure of the light-emitting device shown. The color shift of a structure of the light-emitting device shown in FIG.
  • the RR+GG+BB curve represents the color deviation curve of the existing stacked device structure.
  • the deviation trajectory has no inflection point at small viewing angles and goes directly to the yellow direction in the upper right corner, allowing the actual product to be visually viewed from a wide viewing angle.
  • Yellowing; the RR+GG+B curve represents the fitting color deviation curve of a structure of the light-emitting device as shown in Figure 1 provided by the embodiment of the present disclosure.
  • the color deviation trajectory has an obvious inflection point at small viewing angles, and the yellowing trend occurs at large viewing angles. be contained.
  • making the thickness of the first light-emitting body 211 arranged in a single layer be greater than 5 nm and less than 100 nm is more in line with the color shift trajectory of most current products, and helps to improve the visual experience of human eyes.
  • FIG. 1 only illustrates that B is used as the first luminous body 211 in a single-layer structure, G and R are used as the second luminous body 212 and the third luminous body 213 respectively, and G and R are respectively in a double-layer structure.
  • the structure of a light-emitting device is arranged in the form of a light-emitting device.
  • the thickness of B in Figure 1 is only for illustration and not the actual thickness.
  • a first luminous body 211 arranged in a single layer and one layer of a second luminous body 212 or a third luminous body 213 arranged in a stack ie, where The thickness of a light emitter is the same.
  • a luminous body with higher actual efficiency among R, G, and B can be selected as the first luminous body 211 and arranged in a single-layer structure. , to save material costs and simplify the production process. For example, as shown in FIGS.
  • R is selected as the first luminous body 211 and is arranged in a single-layer structure
  • G and B are respectively used as the second luminous body 212 and the third luminous body 213
  • G Two structural schematic diagrams of light-emitting devices in which G and B are respectively arranged in the form of a double-layer structure; as shown in Figure 6 and Figure 7, G is selected as the first light-emitting body 211 and is arranged in the form of a single-layer structure
  • R and B Two structural schematic diagrams of a light-emitting device in which R and B are respectively provided as the second light-emitting body 212 and the third light-emitting body 213 in the form of a double-layer structure.
  • An embodiment of the second aspect of the present disclosure provides a display panel including the light-emitting device provided according to the embodiment of the first aspect of the present disclosure.
  • the light-emitting device includes a cathode 10, an anode 30, and a light-emitting structure 20 disposed between the cathode 10 and the anode 30.
  • the light-emitting structure 20 includes a light-emitting layer 21, and the light-emitting layer 21 It includes a single first light-emitting body 211 located in the first sub-pixel region, at least two second light-emitting bodies 212 located in the second sub-pixel region and arranged in a stack, and at least two third third light-emitting bodies 212 located in the third sub-pixel area and arranged in a stack.
  • the light-emitting device in the embodiment of the present disclosure has at least two second illuminants 212 stacked in the second sub-pixel area, and at least two third illuminants 213 stacked in the third sub-pixel area, so that A structure of a stacked device is formed in the second sub-pixel area and the third sub-pixel area, thereby utilizing the structural advantages of the stacked device to improve the overall luminous efficiency and lifespan of the light-emitting device; on the other hand, a single layer is provided in the first sub-pixel area
  • the structure of a first light-emitting body 211 that is, a single-layer device structure is formed in the first sub-pixel region to reduce the requirements for the lighting voltage of the first light-emitting body 211.
  • the display panel provided by the embodiment of the second aspect of the present disclosure has better light-emitting performance.
  • An embodiment of the third aspect of the present disclosure provides a display device, including the display panel provided according to the embodiment of the second aspect of the present disclosure.
  • the light-emitting device included in the display panel includes a cathode 10, an anode 30, and a light-emitting structure 20 disposed between the cathode 10 and the anode 30.
  • the light-emitting structure 20 includes
  • the light-emitting layer 21 includes a single first light-emitting body 211 located in the first sub-pixel region, at least two second light-emitting bodies 212 located in the second sub-pixel region and stacked, and a third sub-pixel region and stacked. At least two third luminous bodies 213 are provided.
  • the light-emitting device in the embodiment of the present disclosure has at least two second illuminants 212 stacked in the second sub-pixel area, and at least two third illuminants 213 stacked in the third sub-pixel area, so that A structure of a stacked device is formed in the second sub-pixel area and the third sub-pixel area, thereby utilizing the structural advantages of the stacked device to improve the overall luminous efficiency and lifespan of the light-emitting device; on the other hand, a single layer is provided in the first sub-pixel area
  • the structure of a first light-emitting body 211 that is, a single-layer device structure is formed in the first sub-pixel region to reduce the requirements for the lighting voltage of the first light-emitting body 211.
  • the display device provided by the third embodiment of the present disclosure has a display panel with better light-emitting performance.

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Abstract

一种发光器件、显示面板及显示装置，该发光器件具有第一子像素区域、第二子像素区域和第三子像素区域，该发光器件包括阴极(10)、阳极(30)、以及设置于阴极(10)与阳极(30)之间的发光结构(20)，该发光结构(20)包括发光层(21)，该发光层(21)包括位于第一子像素区域的单个第一发光体(211)、位于第二子像素区域且层叠设置的至少两个第二发光体(212)、及位于第三子像素区域且层叠设置的至少两个第三发光体(213)，阴极(10)用于提供电子，阳极(30)用于提供空穴。

Description

发光器件、显示面板及显示装置
本申请要求于2022年5月23日提交中国专利局、申请号为202210561323.2、发明名称为“发光器件、显示面板及显示装置”的中国专利申请的优先权，其内容应理解为通过引用的方式并入本申请中。
技术领域
本公开实施例涉及但不限于显示技术领域，具体涉及一种发光器件、显示面板及显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)具有自发光、色域较广、对比度较高等优点，另由于其柔韧性，还可以应用于透明、卷轴、折叠、曲面等一些屏幕模式，因此，OLED享有广泛的关注。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本公开实施例提供一种发光器件、显示面板及显示装置。技术方案如下：
本公开第一方面的实施例提供了一种发光器件，具有第一子像素区域、第二子像素区域和第三子像素区域，所述发光器件包括阴极、阳极、以及设置于所述阴极与所述阳极之间的发光结构，所述发光结构包括发光层，所述发光层包括位于所述第一子像素区域的单个第一发光体、位于所述第二子像素区域且层叠设置的至少两个第二发光体、及位于所述第三子像素区域且层叠设置的至少两个第三发光体，所述阴极用于提供电子，所述阳极用于提供空穴。
另外，根据本公开实施例提供的一种发光器件，还可以具有以下附加的技术特征：
在本公开的一些实施例中，所述阴极提供的电子与所述阳极提供的空穴在所述第一发光体复合成激子后使所述第一发光体发出蓝光发光。
在本公开的一些实施例中，所述第一发光体发出蓝光，或者所述第一发光体发出红光，或者所述第一发光体发出绿光。
在本公开的一些实施例中，所述发光层还包括设置于每相邻两个所述第二发光体之间、以及每相邻两个所述第三发光体之间的电荷生成层，所述电荷生成层用于在所述阴极与所述阳极的电场作用下产生向靠近所述阴极的方向运动的空穴、及向靠近所述阳极的方向运动的电子。
在本公开的一些实施例中，所述电荷生成层仅覆盖所述第二发光体和所述第三发光体，所述电荷生成层与所述第一发光体分隔。
在本公开的一些实施例中，所述电荷生成层包括本体、第一空穴传输层和第一电子传输层，所述第一空穴传输层设置于所述本体的靠近所述阴极的第一侧；所述第一电子传输层设置于所述本体的靠近所述阳极的第二侧。
在本公开的一些实施例中，所述电荷生成层还包括：空穴阻挡层，或电子阻挡层，或空穴阻挡层和电子阻挡层，其中：所述空穴阻挡层设置于所述第一电子传输层的靠近所述阳极的一侧与所述第二发光体、所述第三发光体之间；所述电子阻挡层设置于所述第一空穴传输层的靠近所述阴极的一侧与所述第二发光体、所述第三发光体之间。
在本公开的一些实施例中，所述发光结构还包括电子注入层、第二电子传输层、空穴注入层和第二空穴传输层，所述电子注入层设置于所述阴极的靠近所述发光层的一侧，所述第二电子传输层设置于所述电子注入层与所述发光层之间，所述空穴注入层设置于所述阳极的靠近所述发光层的一侧，所述第二空穴传输层设置于所述空穴注入层与所述发光层之间。
在本公开的一些实施例中，所述第一发光体的厚度大于5nm且小于100nm。
在本公开的一些实施例中，所述第一发光体的厚度大于15nm且小于30nm。
在本公开的一些实施例中，所述第一发光体与所述至少两个第二发光体中的其中一个发光体的厚度一致。
在本公开的一些实施例中，所述第一发光体与所述至少两个第三发光体中的其中一个发光体的厚度一致。
在本公开的一些实施例中，所述阴极是Mg:Ag，所述阳极是层叠设置的氧化铟锡ITO/Ag/ITO。
本公开第二方面的实施例提供了一种显示面板，包括根据本公开第一方面的实施例提供的发光器件。
本公开第三方面的实施例提供了一种显示装置，包括根据本公开第二方面的实施例提供的显示面板。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图概述
图1为本公开实施例提供的发光器件的第一种结构示意图；
图2为本公开实施例提供的不同发光器件的一种色偏曲线对比图；
图3为本公开实施例提供的发光器件的第二种结构示意图；
图4为本公开实施例提供的发光器件的第三种结构示意图；
图5为本公开实施例提供的发光器件的第四种结构示意图；
图6为本公开实施例提供的发光器件的第五种结构示意图；
图7为本公开实施例提供的发光器件的第六种结构示意图；
图8为本公开实施例提供的发光器件的第七种结构示意图。
详述
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，其中，相同的部件由相同的附图标记进行标示。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员基于本公开所获得的所有其他实施例，都属于本公开保护的范围。
基于相同的方位理解，在本公开的描述中，术语“中心”、“长度”、“宽度”、“高度”、“上”、“下”、“前”、“后”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
有机发光二极管(OLED)具有自发光、色域较广、对比度较高等优点，另由于其柔韧性，还可以应用于透明、卷轴、折叠、曲面等屏幕模式，因此，OLED享有广泛的关注。但是OLED目前也存在一些问题，比如，其发光器件的发光效率较低或电压较高，使得发光器件的功耗较高、寿命较短，即本领域亟需突破的瓶颈。
目前，OLED中的发光器件，其发光体普遍为单层设置的结构，这种结构的发光器件称为单层器件，其发光效率较低、寿命较短且功耗较高。一些技术中，提出一种叠层器件，其具有叠层设置的发光体，比如，设计每个像素单元的每个R/G/B单色都有上下叠层的两个发光体，这样的结构可以较好地提升器件效率和寿命，但这种叠层器件由于其自身结构的限制，其所需的跨压相比于仅具有单层设置的发光体的单层器件所需的跨压更大，其每个像素单元的每个R/G/B单色所对应的发光体的起亮电压均为单层器件的发光体的起亮电压的两倍左右，所以尽管叠层器件的效率较高，但其实际功耗收益并不大。
鉴于此，如图1所示，本公开第一方面的实施例提供了一种发光器件，该发光器件具有第一子像素区域、第二子像素区域和第三子像素区域，该发光器件包括阴极(Cathode)10、阳极(Anode)30、以及设置于阴极10与阳极30之间的发光结构20，发光结构20包括发光层21，发光层21包括位于第一子像素区域的单个第一发光体211、位于第二子像素区域且层叠设置的至少两个第二发光体212、及位于第三子像素区域且层叠设置的至少两个第三发光体213，阴极10用于提供电子，阳极30用于提供空穴。
其中，举例来说，阴极10可以为Mg:Ag，阳极30可以为层叠设置的ITO(Indium-Tin Oxide，氧化铟锡)/Ag/ITO，第一发光体211、第二发光体212、第三发光体213在加电条件下可以分别发出三种不同颜色的光，比如红、绿、蓝三种颜色的光，以适应不同产品的需求。
根据本公开第一方面的实施例提供的发光器件，其包括阴极10、阳极30、以及设置于阴极10与阳极30之间的发光结构20，发光结构20包括发光层21，发光层21包括位于第一子像素区域的单个第一发光体211、位于第二子像素区域且层叠设置的至少两个第二发光体212、及位于第三子像素区域且层叠设置的至少两个第三发光体213。也就是本公开实施例中的发光器件，一方面，使至少两个第二发光体212层叠设置于第二子像素区域、至少两个第三发光体213层叠设置于第三子像素区域，以在第二子像素区域、第三子像素区域形成叠层器件的结构，从而利用叠层器件的结构优势提升发光器件的整体发光效率及寿命；另一方面，在第一子像素区域设置单层结构的一个第一发光体211，即在第一子像素区域形成单层器件的结构，以降低对第一发光体211的起亮电压的要求，这样，可以在提升发光器件的整体发光效率及寿命的同时，降低整体的跨压，进而降低发光器件的功耗。
在本公开的一些实施例中，阴极10提供的电子与阳极30提供的空穴在第一发光体211复合成激子后使第一发光体211发出蓝光。如图1所示，以单层结构的形式设置的第一发光体211为在加电条件下出射蓝光的发光体(图中用“B”表示)，图中“R”、“G”分别表示在加电条件下出射红光的发光体、在加电条件下出射绿光的发光体。根据实际应用及试验发现，在将R、G、B均设置为叠层器件的结构的情况下，B的起亮电压尤其高， 其较大程度地拉高了整体的跨压，且在背板均为LTPS(Low Temperature Poly-silicon，低温多晶硅)的情况下，结构的实测寿命只有R和G的寿命提升较明显，B的实际寿命与其设置成单层器件的结构时的寿命相差较小。因此，使在加电条件下出射蓝光的发光体作为以单层结构的形式设置的第一发光体211，可以在提升发光器件的整体发光效率及寿命的同时，更好地降低整体的跨压，从而进一步降低发光器件的功耗，提高发光器件的性能。
在本公开的一些实施例中，如图1所示，发光层21还包括设置于每相邻两个第二发光体212之间、以及每相邻两个第三发光体213之间的电荷生成层100，电荷生成层100用于在阴极10与阳极30的电场作用下产生向靠近阴极10的方向运动的空穴、及向靠近阳极30的方向运动的电子。举例来说，如图1所示，第二子像素区域仅有两个第二发光体212层叠设置，该两个第二发光体212之间设置有电荷生成层100，通过该电荷生成层100产生的向靠近阴极10的方向运动的空穴与阴极10提供的电子在位于电荷生成层100的靠近阴极10的一侧的第一个第二发光体212复合成激子，使得该第一个第二发光体212发光；通过该电荷生成层100产生的向靠近阳极30的方向运动的电子与阳极30提供的空穴在位于电荷生成层100的靠近阳极30的另一侧的第二个第二发光体212复合成激子，使得该第二个第二发光体212发光。每相邻两个第二发光体212之间、以及每相邻两个第三发光体213之间通过一个电荷生成层100实现串联，以形成叠层器件的结构。
在本公开的一些实施例中，电荷生成层100仅覆盖第二发光体212和第三发光体213，电荷生成层100与第一发光体211分隔。举例来说，可以在蒸镀电荷生成层100的过程中，利用FMM(Fine Metal Mask，高精度金属掩膜板)隔离第一发光体211，待完成电荷生成层100的蒸镀后再撤离该FMM，以使蒸镀得到的电荷生成层100仅覆盖第二发光体212和第三发光体213且与第一发光体211形成分隔。这样，有助于提高以单层结构设置的第一发光体211的出光效率，同时减小第一发光体211横向漏电所引起的低灰阶串扰现象，改善低灰阶下由第一发光体211引起的第二发光体212和第三发光体213伴随发光的现象，进而提高低灰阶画质。
在本公开的一些实施例中，如图1所示，电荷生成层100包括本体(Charge Generation Layer，CGL)101、第一空穴传输层(Hole Transport Layer，HTL)102和第一电子传输层(Electron Transport Layer，ETL)103，第一空穴传输层102设置于本体101的靠近阴极10的第一侧；第一电子传输层103设置于本体101的靠近阳极30的第二侧。本体101产生的空穴通过第一空穴传输层102传输至位于靠近该本体101的第一侧的第二发光体212、第三发光体213；本体101产生的电子通过第一电子传输层103传输至位于靠近该本体101的第二侧的第二发光体212、第三发光体213。
在本公开的一些实施例中，如图1所示，电荷生成层100还包括：空穴阻挡层(Hole Block Layer，HBL)104，或者如图8所示，电荷生成层100还包括：电子阻挡层(Electron Block Layer，EBL)111。在一个示例性实施例中，电荷生成层100还包括：空穴阻挡层104和电子阻挡层111，其中，空穴阻挡层104设置于第一电子传输层103的靠近阳极30的一侧与第二发光体212、第三发光体213之间；电子阻挡层111设置于第一空穴传输层102的靠近阴极10的一侧与第二发光体212、第三发光体213之间。利用空穴阻挡层104对空穴的阻挡作用和/或电子阻挡层111对电子的阻挡作用，可以调节激子在每层第二发光体212及每层第三发光体213的分布，从而提升整体的发光效果。
在本公开的一些实施例中，如图1所示，发光结构20还包括电子注入层(Electron Injection Layer，EIL)22、第二电子传输层23、空穴注入层(Hole Inject Layer，HIL)25和第二空穴传输层24，电子注入层22设置于阴极10的靠近发光层21的一侧，第二电子传输层23设置于电子注入层22与发光层21之间，空穴注入层25设置于阳极30的靠近 发光层21的一侧，第二空穴传输层24设置于空穴注入层25与发光层21之间。阴极10产生的电子依次通过电子注入层22、第二电子传输层23导至发光层21，同时，阳极30产生的空穴依次通过空穴注入层25、第二空穴传输层24导至发光层21，以为发光层21中的第一发光体211及至少部分第二发光体212、至少部分第三发光体213提供形成激子的电荷。
在本公开的一些实施例中，第一发光体211的厚度大于5nm且小于100nm。以更好地适应小视角色偏轨迹，使大视角发黄的现象得到改善，进而提高显示效果。举例来说，将B作为第一发光体211设计成单层器件的结构，并适当地对其进行膜厚调节，使该第一发光体211的厚度大于15nm且小于30nm，得到如图1所示的发光器件的一种结构。根据已有的叠层器件的结构的色偏数据对本公开实施例所提供的如图1所示的发光器件的一种结构的色偏进行拟合得到如图2所示的曲线图。由图2可见，其中，RR+GG+BB曲线代表已有的叠层器件的结构的色偏曲线，小视角色偏轨迹无拐点，直接往右上角黄色方向行进，使得实际产品的大视角目视发黄；RR+GG+B曲线代表本公开实施例所提供的如图1所示的发光器件的一种结构的拟合色偏曲线，小视角色偏轨迹出现明显的拐点，大视角发黄趋势得到遏制。而且，使单层设置的第一发光体211的厚度大于5nm且小于100nm更符合目前大部分产品的色偏轨迹，有助于提升人眼的视觉感受。
本公开实施例所公开的发光器件可以为顶发射型也可以为底发射型，本公开对此不做限定。另外，图1仅示意将B作为第一发光体211以单层结构的形式设置、G和R分别作为第二发光体212和第三发光体213、且G和R均分别以双层结构的形式设置的一种发光器件的结构，图1中B的厚度也仅为示意并非实际厚度。
在本公开的一些实施例中，如图3所示，可以使单层设置的一个第一发光体211与叠层设置的第二发光体212或第三发光体213的其中一层(即其中一个发光器)的厚度一致，这种方案下不用变更掩膜板(mask)设计，可以节省设备成本。
在本公开的一些实施例中，根据R、G、B的实际效率，可以选定R、G、B中实际效率较高的一种发光体作为第一发光体211以单层结构的形式设置，以节省材料成本并简化制作工艺。举例来说，如图4和图5所示，为选定R作为第一发光体211以单层结构的形式设置、G和B分别作为第二发光体212和第三发光体213、且G和B均分别以双层结构的形式设置的发光器件的两种结构示意图；如图6和图7所示，为选定G作为第一发光体211以单层结构的形式设置、R和B分别作为第二发光体212和第三发光体213、且R和B均分别以双层结构的形式设置的发光器件的两种结构示意图。
本公开第二方面的实施例提供了一种显示面板，包括根据本公开第一方面的实施例提供的发光器件。
根据本公开第二方面的实施例提供的显示面板，其发光器件包括阴极10、阳极30、以及设置于阴极10与阳极30之间的发光结构20，发光结构20包括发光层21，发光层21包括位于第一子像素区域的单个第一发光体211、位于第二子像素区域且层叠设置的至少两个第二发光体212、及位于第三子像素区域且层叠设置的至少两个第三发光体213。也就是本公开实施例中的发光器件，一方面，使至少两个第二发光体212层叠设置于第二子像素区域、至少两个第三发光体213层叠设置于第三子像素区域，以在第二子像素区域、第三子像素区域形成叠层器件的结构，从而利用叠层器件的结构优势提升发光器件的整体发光效率及寿命；另一方面，在第一子像素区域设置单层结构的一个第一发光体211，即在第一子像素区域形成单层器件的结构，以降低对第一发光体211的起亮电压的要求，这样，可以在提升发光器件的整体发光效率及寿命的同时，降低整体的跨压，进而降低发光 器件的功耗。可见，本公开第二方面的实施例提供的显示面板的发光性能较佳。
本公开第三方面的实施例提供了一种显示装置，包括根据本公开第二方面的实施例提供的显示面板。
根据本公开第三方面的实施例提供的显示装置，其显示面板所包括的发光器件中，包括阴极10、阳极30、以及设置于阴极10与阳极30之间的发光结构20，发光结构20包括发光层21，发光层21包括位于第一子像素区域的单个第一发光体211、位于第二子像素区域且层叠设置的至少两个第二发光体212、及位于第三子像素区域且层叠设置的至少两个第三发光体213。也就是本公开实施例中的发光器件，一方面，使至少两个第二发光体212层叠设置于第二子像素区域、至少两个第三发光体213层叠设置于第三子像素区域，以在第二子像素区域、第三子像素区域形成叠层器件的结构，从而利用叠层器件的结构优势提升发光器件的整体发光效率及寿命；另一方面，在第一子像素区域设置单层结构的一个第一发光体211，即在第一子像素区域形成单层器件的结构，以降低对第一发光体211的起亮电压的要求，这样，可以在提升发光器件的整体发光效率及寿命的同时，降低整体的跨压，进而降低发光器件的功耗。可见，本公开第三方面的实施例提供的显示装置，其显示面板的发光性能较佳。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
本公开的各个实施例均采用相关的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。
以上所述仅为本公开的较佳实施例，并非用于限定本公开的保护范围。凡在本公开的精神和原则之内所作的任何修改、等同替换、改进等，均包含在本公开的保护范围。

Claims (15)

  1. 一种发光器件，具有第一子像素区域、第二子像素区域和第三子像素区域，所述发光器件包括阴极、阳极、以及设置于所述阴极与所述阳极之间的发光结构，所述发光结构包括发光层，所述发光层包括位于所述第一子像素区域的单个第一发光体、位于所述第二子像素区域且层叠设置的至少两个第二发光体、及位于所述第三子像素区域且层叠设置的至少两个第三发光体，所述阴极用于提供电子，所述阳极用于提供空穴。
  2. 根据权利要求1所述的发光器件，其中，所述阴极提供的电子与所述阳极提供的空穴在所述第一发光体复合成激子后使所述第一发光体发光。
  3. 根据权利要求2所述的发光器件，其中，所述第一发光体发出蓝光，或者所述第一发光体发出红光，或者所述第一发光体发出绿光。
  4. 根据权利要求1或2所述的发光器件，所述发光层还包括设置于每相邻两个所述第二发光体之间、以及每相邻两个所述第三发光体之间的电荷生成层，所述电荷生成层用于在所述阴极与所述阳极的电场作用下产生向靠近所述阴极的方向运动的空穴、及向靠近所述阳极的方向运动的电子。
  5. 根据权利要求4所述的发光器件，其中，所述电荷生成层仅覆盖所述第二发光体和所述第三发光体，所述电荷生成层与所述第一发光体分隔。
  6. 根据权利要求4所述的发光器件，其中，所述电荷生成层包括本体、第一空穴传输层和第一电子传输层，所述第一空穴传输层设置于所述本体的靠近所述阴极的第一侧；所述第一电子传输层设置于所述本体的靠近所述阳极的第二侧。
  7. 根据权利要求6所述的发光器件，所述电荷生成层还包括：空穴阻挡层，或电子阻挡层，或空穴阻挡层和电子阻挡层，其中：
    所述空穴阻挡层设置于所述第一电子传输层的靠近所述阳极的一侧与所述第二发光体、所述第三发光体之间；
    所述电子阻挡层设置于所述第一空穴传输层的靠近所述阴极的一侧与所述第二发光体、所述第三发光体之间。
  8. 根据权利要求4所述的发光器件，所述发光结构还包括电子注入层、第二电子传输层、空穴注入层和第二空穴传输层，所述电子注入层设置于所述阴极的靠近所述发光层的一侧，所述第二电子传输层设置于所述电子注入层与所述发光层之间，所述空穴注入层设置于所述阳极的靠近所述发光层的一侧，所述第二空穴传输层设置于所述空穴注入层与所述发光层之间。
  9. 根据权利要求1或2所述的发光器件，其中，所述第一发光体的厚度大于5nm且小于100nm。
  10. 根据权利要求9所述的发光器件，其中，所述第一发光体的厚度大于15nm且小于30nm。
  11. 根据权利要求1所述的发光器件，其中，所述第一发光体与所述至少两个第二发光体中的其中一个发光体的厚度一致。
  12. 根据权利要求1所述的发光器件，其中，所述第一发光体与所述至少两个第三发光体中的其中一个发光体的厚度一致。
  13. 根据权利要求1所述的发光器件，其中，所述阴极是Mg:Ag，所述阳极是层叠设 置的氧化铟锡ITO/Ag/ITO。
  14. 一种显示面板，其特征在于，包括根据权利要求1至13中任一项所述的发光器件。
  15. 一种显示装置，其特征在于，包括根据权利要求14所述的显示面板。
PCT/CN2023/093979 2022-05-23 2023-05-12 发光器件、显示面板及显示装置 WO2023226796A1 (zh)

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CN1615059A (zh) * 2004-04-29 2005-05-11 友达光电股份有限公司 全彩电致发光显示器
CN101552283A (zh) * 2008-03-31 2009-10-07 株式会社日立显示器 有机发光显示装置
CN111524463A (zh) * 2020-05-29 2020-08-11 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置
US20220140015A1 (en) * 2020-10-30 2022-05-05 Samsung Display Co., Ltd. Capping layer for tandem structure and display device having the same
CN114975813A (zh) * 2022-05-23 2022-08-30 京东方科技集团股份有限公司 发光器件、显示面板及显示装置

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CN1615059A (zh) * 2004-04-29 2005-05-11 友达光电股份有限公司 全彩电致发光显示器
CN101552283A (zh) * 2008-03-31 2009-10-07 株式会社日立显示器 有机发光显示装置
CN111524463A (zh) * 2020-05-29 2020-08-11 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置
US20220140015A1 (en) * 2020-10-30 2022-05-05 Samsung Display Co., Ltd. Capping layer for tandem structure and display device having the same
CN114975813A (zh) * 2022-05-23 2022-08-30 京东方科技集团股份有限公司 发光器件、显示面板及显示装置

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