WO2023216548A1

WO2023216548A1 - Drive protection circuit for power semiconductor device, and control method

Info

Publication number: WO2023216548A1
Application number: PCT/CN2022/133463
Authority: WO
Inventors: 曾嵘; 余占清; 陈政宇; 尚杰; 赵彪; 吴锦鹏; 刘佳鹏; 屈鲁
Original assignee: 清华大学
Priority date: 2022-05-11
Filing date: 2022-11-22
Publication date: 2023-11-16
Also published as: CN115085705A

Abstract

Provided in the present invention are a drive protection circuit for a power semiconductor device, and a control method. The drive protection circuit comprises a turning-on and turning-off module, a static protection unit and a dynamic protection unit, wherein the turning-on and turning-off module, the static protection unit and the dynamic protection unit are connected to one another in parallel, and are each connected to a power semiconductor device and arranged between a gate electrode of a power semiconductor and a cathode of same; and the dynamic protection unit is further connected to an anode of the power semiconductor device. By means of the drive protection circuit in the present invention, during complete deenergization of a drive for a power semiconductor device and during a power-on process and a power-off process of same, the potential of a gate electrode of the power semiconductor device is less than that of a cathode, or a potential difference between the gate electrode and the cathode is less than a turning-on voltage for the gate electrode and cathode of a power semiconductor, such that the reliable turning-off of the power semiconductor device is ensured, thereby protecting the power semiconductor device.

Description

A driving protection circuit and control method for power semiconductor devices

Technical field

The invention belongs to the technical field of electronic circuits, and in particular relates to a drive protection circuit and a control method for a power semiconductor device.

Background technique

The gate drive circuit (hereinafter referred to as the "drive") of the existing thyristor-type power semiconductor device (thyristor, integrated gate commutated thyristor IGCT, etc., hereinafter referred to as the "device"), under normal power supply conditions, can be turned off when turned off. The device provides a gate potential lower than the cathode potential, ensuring reliable shutdown of the device. However, during the period when the driver is completely powered off, or during the power-on and power-off processes, the driver cannot provide a reliable gate potential lower than the cathode potential during the period, so the device's ability to withstand voltage and voltage change rate will not reach the rated level. value. Therefore, devices without drive protection circuits require external high-voltage isolation power supply for the drive, causing the drive to be powered on earlier than the main circuit, severely limiting the application scenarios.

In the drive circuit, during normal power-on, the turn-on and turn-off modules can ensure that the potential difference between the gate and cathode of the power semiconductor device is less than the turn-on voltage of the gate and cathode of the power semiconductor device. When the anode of the power semiconductor device has a large The power semiconductor device will not be turned on accidentally when the instantaneous voltage is high. During the power-off period, or during the power-on and power-off processes, the gate and cathode of the turn-on and turn-off module and the power semiconductor device are disconnected, and a reliable gate potential lower than the cathode potential cannot be provided during the period, so that the device can The ability to withstand voltage and voltage change rate will not reach the rated value. When a large instantaneous voltage appears on the anode of a power semiconductor device, the power semiconductor device is easily turned on by mistake.

Patent CN108718193A provides a feasible drive protection circuit for power semiconductor devices, but the implementation method of the "start-stop module" described in it is too simple. Although the voltage change rate of the device during the power-on and power-off processes is certain, Benefits, but also has the following shortcomings: (1) The start-stop module only contains a single switching element. The control module needs to provide a trigger signal to turn on or maintain conduction before the voltage reaches the threshold. At the same time, it needs to be turned off after the voltage reaches the threshold. The element Difficulty in selection, taking into account both action speed and default state; (2) The start-stop module can only provide protection for the device during power-on and/or power-off, but does not provide corresponding protection capabilities during complete power loss of the drive; (3) ) The combination of the start-stop module and the anode structure of the device itself may cause the device to lose its reverse blocking capability, resulting in reverse flow under certain application conditions, increasing the risk of device failure.

Contents of the invention

In view of the above problems, the present invention proposes a drive protection circuit and control method for a power semiconductor device.

In order to achieve the above objects, the present invention adopts the following technical solutions:

A drive protection circuit for a power semiconductor device, including a turn-on and turn-off module, a static protection unit and a dynamic protection unit;

The turn-on and turn-off module, static protection unit and dynamic protection unit are connected in parallel with each other, are all connected to power semiconductor devices, and are arranged between the gate and cathode of the power semiconductor;

The dynamic protection unit is also connected to the anode of the power semiconductor device.

Preferably, the static protection unit is a parallel circuit of multiple switching elements, a series-parallel circuit of multiple switching elements, or a series-parallel circuit of multiple switching elements and one-way flow elements, and the dynamic protection unit is a switching element and a voltage mutual inductance device. Series circuit or switching element and voltage mutual inductance device, energy storage capacitor, one-way flow element series and parallel circuit.

Preferably, the parallel circuit of multiple switching elements includes a first branch and a second branch arranged in parallel, the first branch is provided with a first switching element S1, and the second branch is provided with a second switch. In component S2, the first branch and the second branch are electrically connected to the gate and cathode of the power semiconductor device respectively.

Preferably, the series-parallel circuit of the plurality of switch circuits includes a first branch and a second branch connected in parallel, the first branch is provided with a first switching element S1, and both ends of the first branch are connected to the power semiconductor respectively. The gate and cathode of the device are connected, the second branch includes a second switching element S2 and a third switching element S3 connected in series, and both ends of the second branch are electrically connected to the gate and cathode of the power semiconductor device respectively.

Preferably, the series-parallel circuit of multiple switching elements and one-way flow elements includes a parallel first branch and a second branch, and the first branch includes a series-connected first switching element S1 and a one-way flow element D1 , the second branch includes a second switching element S2 and a third switching element S3 connected in series. One end of the first branch and the second branch is connected to the gate of the power semiconductor component, and the other end is connected to the power Cathode connection of semiconductor components.

Preferably, the series circuit of the switching element and the voltage mutual inductance device includes a fourth switching element S4 and a voltage mutual inductance device VT. The voltage mutual inductance device VT includes a secondary side and a primary side, and one end of the fourth switching element S4 is connected in series with the secondary side. , the other end is connected to the gate of the power semiconductor device, one end of the secondary side is connected to the cathode of the power semiconductor device, and the two ends of the primary side are connected to the anode and cathode of the power semiconductor device respectively.

Preferably, the switching element, voltage mutual inductance device, energy storage capacitor, and one-way flow element are connected in series and parallel circuit, including the fourth switching element S4, the voltage mutual inductance device VT, the third one-way flow element D3, and the overvoltage protection element T2 , energy storage capacitor C1 and the first series branch, the voltage mutual inductance device VT includes a secondary side and a primary side, the two ends of the primary side are respectively connected to the anode and cathode of the power semiconductor device, the first series branch It includes a series-connected secondary side and a second one-way flow element D2. One end of the fourth switching element S4 is connected in series with a parallel first series branch, an overvoltage protection element T2, a third one-way flow element D3 and an energy storage device. capacitor C1, and the other end of the fourth switching element S4 is connected to the gate of the power semiconductor device, and one end of the first series branch is connected to the cathode of the power semiconductor device.

Preferably, the power semiconductor device includes a thyristor, a gate turn-off thyristor, an integrated gate commutation thyristor, an emitter turn-off thyristor, and an insulated gate bipolar transistor.

Preferably, the drive protection circuit includes one or a combination of a static protection unit and a dynamic protection unit.

A control method for a drive protection circuit of a power semiconductor device. When the power is completely lost, the static protection unit and the dynamic protection unit operate, and the opening and closing modules do not operate;

During the power-on process, the static protection unit and the dynamic protection unit run first. When the power-on is completed, the switch and shutdown module are put into operation, and the static protection unit and the dynamic protection unit stop running;

Or when power-on is completed, the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and the static protection unit stops running at the same time;

Or when power-on is completed, the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and finally the static protection unit stops running;

Before powering off, the turn-on and turn-off module ensures that the potential difference between the gate and cathode of the power semiconductor device is less than the turn-on voltage of the gate and cathode of the power semiconductor device;

During the power-off process, the static protection unit and the dynamic protection unit operate, and the on/off module stops running at the same time;

Or during the power-off process, the static protection unit is put into operation first, while the opening and closing modules stop running, and finally the dynamic protection unit is put into operation;

Or during the power-off process, the static protection unit is put into operation first, then the turning on and off modules stop running, and finally the dynamic protection unit is put into operation.

Preferably, the static protection unit is used to ensure that the potential difference between the gate and cathode of the power semiconductor device is less than the conduction between the gate and cathode of the power semiconductor device when the power is completely lost, during the power-on process and during the power-off process. voltage, the dynamic protection unit is used to ensure that the gate potential of the power semiconductor device is lower than the cathode potential when a large instantaneous voltage occurs at the anode of the power semiconductor device.

Beneficial effects of the present invention:

1. The drive protection circuit of the present invention realizes that the gate potential of the power semiconductor device is lower than the cathode, or the potential difference between the gate and cathode is lower than the power when the power semiconductor device is completely powered off, during the power-on process, and during the power-off process. The conduction voltage of the semiconductor gate cathode ensures reliable shutdown of the power semiconductor device and protects the power semiconductor device;

2. The static protection unit of the present invention has the advantages of convenient component selection, simple control, and rapid coordination of various parts of the circuit. It can ensure that the gate and cathode of the power semiconductor device are not in a suspended state under any circumstances, greatly improving the device shutdown. The reliability of interruption reduces the risk of failure, and greatly reduces the leakage current of the static protection unit when it is not working, which is conducive to the normal opening action of the power semiconductor device, and greatly reduces the leakage current of the static protection unit when it is not working, and has It is conducive to the normal turn-on action of the power semiconductor device, and can prevent the combination of the static protection unit and the anode structure of the device itself from causing the device to lose its reverse blocking ability during complete power loss, and avoid reverse flow under certain special working conditions;

3. The dynamic protection unit of the present invention has the advantages of convenient component selection, simple control, and strong resistance to dv/dt. It can achieve targeted generation of negative gate-cathode voltage when a large dv/dt occurs at the anode, reducing the risk of failure. , which reduces the total impedance requirement for the entire loop, has better protection effect, and has a memory effect. At the same time, it can prevent the combination of the static protection unit and the anode structure of the device itself from causing the device to lose its reverse blocking ability during complete power loss of the drive. Avoid reverse flow under certain special working conditions to reduce the risk of device failure.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and obtained by the structure pointed out in the written description, claims and appended drawings.

Description of the drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are of the present invention. For some embodiments of the invention, those of ordinary skill in the art can also obtain other drawings based on these drawings without exerting creative efforts.

Figure 1 shows a schematic structural diagram of a drive protection circuit for a power semiconductor device according to the present invention;

Figure 2 shows a parallel circuit of multiple switching elements of the static protection unit;

Figure 3 shows a series-parallel circuit of multiple switching elements of the static protection unit;

Figure 4 shows a series-parallel circuit of multiple switching elements and one-way flow elements of the static protection unit;

Figure 5 shows the series circuit of the switching element of the dynamic protection unit and the voltage mutual inductance device;

Figure 6 shows the series-parallel circuit of the switching element, voltage mutual inductance device, energy storage capacitor, and one-way flow element of the dynamic protection unit.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

A drive protection circuit for a power semiconductor device, as shown in Figure 1, includes a turn-on and turn-off module, a static protection unit and a dynamic protection unit;

The turn-on and turn-off modules, the static protection unit and the dynamic protection unit are connected in parallel with each other, are all connected to power semiconductor devices, and are arranged between the gate and cathode of the power semiconductor;

It should be noted that the drive protection circuit can be divided into a static protection unit and a dynamic protection unit. Both the static protection unit and the dynamic protection unit are connected between two or three poles of the gate, cathode and anode of the power semiconductor device.

Further, the static protection unit is a parallel circuit of multiple switching elements or a series-parallel circuit of multiple switching elements or a series-parallel circuit of multiple switching elements and one-way flow elements, and the dynamic protection unit is a series circuit of switching elements and a voltage mutual inductance device or a switch. Components are connected in series and parallel circuits with voltage mutual inductance devices, energy storage capacitors, and unidirectional flow components.

Further, as shown in Figure 2, the parallel circuit of multiple switching elements includes a first branch and a second branch arranged in parallel. The first branch is provided with a first switching element S1, and the second branch is provided with a second switch. The component S2, the first branch and the second branch are electrically connected to the gate and cathode of the power semiconductor device respectively.

It should be noted that the static protection unit is composed of switching element S1 and switching element S2 in parallel. The on-resistance of S1 is extremely low and can be reliably closed during the drive power loss period. There are no special requirements for its switching time; the on-resistance of S2 It is low and can respond quickly when the switch drive signal is applied. There are no special requirements for its normally open and normally closed characteristics. One S1 option is a normally closed mechanical relay, one S2 option is a solid state relay, and the other S2 option is an enhancement mode MOSFET.

Control method for a parallel circuit of multiple switching elements: S1 remains closed during complete power loss of the drive and during power on and off; S2 changes from open to closed during power on, and S2 changes from closed to open during power off; When it is completed, S1 is disconnected first, and S2 remains closed at this time. After S1 is completely disconnected, S2 is disconnected again. At the same time, other driven circuits (turning on and off modules) are put into work, and the two realize switching without delay; it needs to be When the power is on, other circuits of the driver are cut off, and S2 is quickly closed at the same time. The two realize switching without delay, and then S1 is closed again, maintaining the entire power-off process until the driver is completely powered off. This circuit has the advantages of convenient component selection, simple control, and rapid coordination of various parts of the circuit. It can ensure that the gate and cathode of the power semiconductor device are not in a floating state under any circumstances, greatly improving the reliability of the device shutdown. Reduce the risk of failure.

Further, as shown in Figure 3, the series-parallel circuit of multiple switch circuits includes a first branch and a second branch connected in parallel. The first branch is provided with a first switching element S1, and both ends of the first branch are connected to The gate and cathode of the power semiconductor device are connected, the second branch includes a second switching element S2 and a third switching element S3 connected in series, and both ends of the second branch are electrically connected to the gate and cathode of the power semiconductor device respectively.

It should be noted that Figure 3 is based on Figure 2 and adds the switching element S3 in series to the S2 branch. The on-resistance of S3 is extremely low, and the leakage current is extremely small when it is turned off. Its switching time and normally open and normally closed characteristics There are no special requirements. One option for S3 is a normally open mechanical relay.

Control method of multiple switch circuits in series and parallel circuits: During the power-on and power-off process, when the series branch needs to be closed, S3 closes before S2, and when the series branch needs to be disconnected, S3 and S2 open at the same time; to ensure the continuity of the entire series branch. Characteristics are defined by the extremely responsive S2. The rest of the control logic is the same as the scheme in Figure 2.

This circuit has all the advantages of the above solution, and greatly reduces the leakage current of the static protection unit when it is not working, which is beneficial to the normal turn-on action of the power semiconductor device and reduces losses at the same time.

Further, as shown in Figure 4, the series-parallel circuit of multiple switching elements and one-way flow elements includes a first branch and a second branch connected in parallel. The first branch includes a series-connected first switching element S1 and a one-way flow element. Component D1, the second branch includes a second switching element S2 and a third switching element S3 connected in series. One end of the first branch and the second branch is connected to the gate of the power semiconductor component, and the other end is connected to the power semiconductor component. The cathode connection of the device.

It should be noted that Figure 4 is based on Figure 3. A one-way flow element D1 is inserted in the S1 branch to form a second series branch. The conduction voltage of D1 is as low as possible, and the surge current capability is strong. For other characteristics There are no special requirements. One option for D1 is a Schottky diode.

The control method is: S1 remains closed during the complete power loss of the drive and during power on and off; during power on, S3 changes from open to closed before S2, and during power off, S2 and S3 change from closed to open at the same time; When the power supply is completed, S2 and S3 are disconnected, and other driven circuits (turning on and off modules) are put into work at the same time. After that, S1 is disconnected to achieve no-delay switching; when powering off is required, the driving S1 is closed first and waits for stability before other circuits ( Turn on and off the module) cut off the work, and at the same time S2 is quickly closed, the two achieve no-delay switching, and the entire power-off process is maintained until the driver is completely powered off.

This circuit has all the advantages of the above solution, and can prevent the device from losing its reverse blocking ability due to the combination of the static protection unit and the anode structure of the device itself during complete power loss, and avoid reverse flow under certain special working conditions. Reduce the risk of device failure.

Further, as shown in Figure 5, the series circuit of the switching element and the voltage mutual inductance device includes a fourth switching element S4 and a voltage mutual inductance device VT. The voltage mutual inductance device VT includes a secondary side and a primary side, and one end of the fourth switching element S4 is connected in series with the secondary side. , the other end is connected to the gate of the power semiconductor device, one end of the secondary side is connected to the cathode of the power semiconductor device, and the two ends of the primary side are connected to the anode and cathode of the power semiconductor device respectively.

It should be noted that the dynamic protection unit is composed of the switching element S4 and the voltage mutual inductance device VT connected in series. The on-resistance of S4 is extremely low, and it can ensure reliable closing during the drive power loss period. There are no special requirements for its switching time; VT can When a large dv/dt occurs on the high-voltage side, a certain voltage is induced on the low-voltage side, and the high-voltage side has DC blocking characteristics.

One S1 option is a normally closed mechanical relay, one VT option is a capacitively coupled voltage transformer device, and another VT option is a transformer with capacitive isolation.

The control method of the series circuit of the switching element and the voltage mutual inductance device: S4 remains closed during the complete power loss of the drive and during the power on and off process; when the positive dv/dt appears at the anode of the device, VT generates a negative voltage and is applied between the gate and cathode of the device. Thus, the displacement current caused by the anode dv/dt is drawn out from the gate. After the driver is powered on, S4 is disconnected and VT no longer plays a role.

This circuit has the advantages of easy component selection, simple control, and strong dv/dt resistance. It can generate a negative gate-cathode voltage when a large dv/dt occurs at the anode, reducing the risk of failure and reducing the impact on the entire circuit. The total impedance requirement is higher, and the protection effect is better.

Further, as shown in Figure 6, the series-parallel circuit of the switching element, the voltage mutual inductance device, the energy storage capacitor, and the one-way flow element includes the fourth switching element S4, the voltage mutual inductance device VT, the third one-way flow element D3, and the through-flow element D3. Voltage protection element T2, energy storage capacitor C1 and the first series branch. The voltage mutual inductance device VT includes a secondary side and a primary side. Both ends of the primary side are connected to the anode and cathode of the power semiconductor device respectively. The first series branch includes a series connection The secondary side and the second one-way flow element D2, one end of the fourth switching element S4 are connected in series with the first series branch, the overvoltage protection element T2, the third one-way flow element D3 and the energy storage capacitor C1, which are connected in parallel with each other, and The other end of the fourth switching element S4 is connected to the gate of the power semiconductor device, and one end of the first series branch is connected to the cathode of the power semiconductor device.

It should be noted that, based on the scheme in Figure 5, the scheme in Figure 6 adds a one-way flow element D2 in series to the VT branch to form the first series branch, and then connects the series branch with the one-way flow element D3 and overvoltage protection Component T2 and energy storage capacitor C1 are connected in parallel. Among them, the conduction voltage of D2 and D3 is as low as possible, the surge current capability is strong, and there are no special requirements for other characteristics; the protection threshold of T2 is less than or equal to the reverse breakdown voltage of the gate cathode of the power semiconductor component; C1 has no special requirements.

It should be noted that one option for D2 and D3 is Schottky diodes, one option for T2 is TVS tube, and one option for C1 is MLCC.

It should be noted that the series-parallel circuit control method of switching elements, voltage mutual inductance devices, energy storage capacitors, and unidirectional flow elements: based on the above scheme, the reverse current generated by VT can be injected into C1 through D2 and stored. And the voltage of C1 does not exceed the protection threshold of T2, which can have a memory effect on dv/dt resistance and increase the time when the gate potential of the power semiconductor device is lower than the cathode potential.

This circuit has the advantages of strong resistance to dv/dt and low risk of gate cathode breakdown of the device. It can generate a negative gate-cathode voltage when a large dv/dt occurs on the anode, reducing the risk of failure, and has a memory effect. At the same time, D2 and D3 can prevent the device from losing its reverse blocking ability due to the combination of the static protection unit and the anode structure of the device itself during complete power loss of the drive, avoid reverse flow under certain special working conditions, and reduce the risk of device failure.

Further, power semiconductor devices include, but are not limited to, thyristors, gate turn-off thyristors, integrated gate commutation thyristors, emitter turn-off thyristors, and insulated gate bipolar transistors.

Further, the driving protection circuit includes one or a combination of a static protection unit and a dynamic protection unit.

It should be noted that the driving protection circuit can be implemented by any one of the above-mentioned static protection unit and dynamic protection unit alone, or can be implemented by a combination of the two. It should be noted that the above-mentioned solutions are all embodiments, and any can be implemented in power semiconductor devices. Circuits that realize that the gate potential of the power semiconductor device is lower than the cathode during the complete power loss of the drive, during the power-on process, and during the power-off process, or the potential difference between the gate and the cathode is less than the turn-on voltage of the power semiconductor gate cathode, are within the protection range. within.

It should be noted that the static protection unit implementation solution can be composed of multiple switching elements and one-way flow elements connected in series, parallel, or mixed. Switching elements include, but are not limited to, mechanical and semiconductor normally open and normally closed switching elements.

The dynamic protection unit implementation solution can be composed of multiple switching elements, one-way flow elements, voltage mutual inductance devices, energy storage capacitors, etc. connected in series, parallel, or mixed. Switching elements include, but are not limited to, mechanical and semiconductor normally open and normally closed switching elements. Voltage mutual inductance devices include but are not limited to transformers, capacitive coupling voltage mutual inductance devices, magnetic field coupling voltage mutual inductance devices, photoelectric coupling voltage mutual inductance devices, etc.

Or when power-on is completed, the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and then the static protection unit stops running;

During the power-off process, the static protection unit and the dynamic protection unit operate, while the on/off module stops running;

Or during the power-off process, the static protection unit is put into operation first, and the turn-on and turn-off modules stop running at the same time, and then the dynamic protection unit is put into operation;

Or during the power-off process, the static protection unit is put into operation first, then the opening and closing modules stop running, and then the dynamic protection unit is put into operation.

Further, during complete power loss, power-on process and power-off process, the static protection unit is used to ensure that the potential difference between the gate and cathode of the power semiconductor device is less than the conduction voltage of the gate and cathode of the power semiconductor device. Dynamic protection units are used to ensure that the gate potential of the power semiconductor device is lower than the cathode potential when a large instantaneous voltage occurs at the anode of the power semiconductor device.

It should be noted that when the power is completely lost, the static protection unit forms a path between the gate and cathode of the power semiconductor device, ensuring that when a forward current occurs between the gate and cathode at any time, it provides a flow path for this current, ensuring that The potential difference between the gate and the cathode is less than the turn-on voltage of the power semiconductor gate and cathode; when a large instantaneous voltage occurs at the anode of the device, the dynamic protection unit absorbs the energy of the instantaneous voltage and creates a gap between the cathode and the gate of the power semiconductor element. A short-term forward voltage is generated to ensure that the gate potential of the power semiconductor device is lower than the cathode potential; the turn-on and turn-off modules do not operate.

During the power-on process, the static protection unit first ensures that the potential difference between the gate and cathode is less than the conduction voltage of the power semiconductor gate and cathode, and the dynamic protection unit ensures that the gate of the power semiconductor device will The electrode potential is lower than the cathode potential; when power is completed, the turn-on and turn-off modules are put into operation. The turn-on and turn-off modules ensure that the potential difference between the gate and cathode is less than the turn-on voltage of the gate and cathode of the power semiconductor, while the static The protection unit and the dynamic protection unit stop running; or when the power-on is completed, the dynamic protection unit first stops running, and then the opening and closing modules are put into operation, and the static protection unit stops running; or when the power-on is completed, the dynamic protection unit first Stop operation, then turn on and turn off the module into operation, then the static protection unit stops running.

Before powering off, the turn-on and off modules ensure that the potential difference between the gate and cathode is less than the conduction voltage of the power semiconductor gate and cathode; during the power-off process, the static protection unit ensures that the potential difference between the gate and cathode Less than the turn-on voltage of the gate and cathode of the power semiconductor, the dynamic protection unit ensures that when a large instantaneous voltage occurs on the anode of the device, the gate potential of the power semiconductor device is lower than the cathode potential, and the turn-on and turn-off modules stop running at the same time; or during the power-off process In the power-off process, the static protection unit is put into operation first, and the turn-on and turn-off modules stop running at the same time, and then the dynamic protection unit is put into operation; or during the power-off process, the static protection unit is put into operation first, and then the turn-on and turn-off modules stop running, and then the dynamic protection unit is put into operation. The unit is put into operation.

If the drive protection circuit of the power semiconductor device only contains a static protection unit, or only a static protection unit, then the description of the dynamic protection unit or the static protection unit can be removed in the above control method.

Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent substitutions for some of the technical features; and these Modifications or substitutions do not deviate from the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of each embodiment of the present invention.

Claims

A drive protection circuit for a power semiconductor device, characterized by including a turn-on and turn-off module, a static protection unit and a dynamic protection unit;

The turn-on and turn-off module, static protection unit and dynamic protection unit are connected in parallel with each other, are all connected to power semiconductor devices, and are arranged between the gate and cathode of the power semiconductor;

The dynamic protection unit is also connected to the anode of the power semiconductor device.
A drive protection circuit for a power semiconductor device according to claim 1, wherein the static protection unit is a parallel circuit of multiple switching elements or a series-parallel circuit of multiple switching elements or a combination of multiple switching elements and one-way communication. A series-parallel circuit of current elements, the dynamic protection unit is a series circuit of a switching element and a voltage mutual inductance device or a series-parallel circuit of a switching element and a voltage mutual inductance device, an energy storage capacitor, or a one-way current element.
A drive protection circuit for a power semiconductor device according to claim 2, characterized in that the parallel circuit of the plurality of switching elements includes a first branch and a second branch arranged in parallel, and the first branch is arranged There is a first switching element S1, and the second branch is provided with a second switching element S2. The first branch and the second branch are both electrically connected to the gate and cathode of the power semiconductor device respectively.
A drive protection circuit for a power semiconductor device according to claim 2, characterized in that the series and parallel circuits of the plurality of switch circuits include a first branch and a second branch connected in parallel, and the first branch is configured There is a first switching element S1, and both ends of the first branch are connected to the gate and cathode of the power semiconductor device respectively. The second branch includes a second switching element S2 and a third switching element S3 connected in series, and the second branch Both ends of the branch are electrically connected to the gate and cathode of the power semiconductor device respectively.
A drive protection circuit for a power semiconductor device according to claim 2, wherein the series-parallel circuit of the plurality of switching elements and the one-way flow element includes a first branch and a second branch connected in parallel, and the The first branch includes a first switching element S1 and a one-way flow element D1 connected in series. The second branch includes a second switching element S2 and a third switching element S3 connected in series. The first branch and the second branch One end of the road is connected to the gate of the power semiconductor component, and the other end is connected to the cathode of the power semiconductor component.
A drive protection circuit for a power semiconductor device according to any one of claims 2 to 5, characterized in that the series circuit between the switching element and the voltage mutual inductance device includes a fourth switching element S4 and a voltage mutual inductance device VT, and the The voltage mutual inductance device VT includes a secondary side and a primary side. One end of the fourth switching element S4 is connected in series with the secondary side, and the other end is connected to the gate of the power semiconductor device. One end of the secondary side is connected to the cathode of the power semiconductor device. The primary side The two ends are connected to the anode and cathode of the power semiconductor device respectively.
A driving protection circuit for a power semiconductor device according to any one of claims 2 to 5, characterized in that the switching element, voltage mutual inductance device, energy storage capacitor, and unidirectional flow element are connected in series and parallel circuits, including a third Four switching elements S4, a voltage mutual inductance device VT, a third one-way flow element D3, an overvoltage protection element T2, an energy storage capacitor C1 and a first series branch. The voltage mutual inductance device VT includes a secondary side and a primary side. Both ends of the primary side are connected to the anode and cathode of the power semiconductor device respectively. The first series branch includes a series-connected secondary side and a second one-way flow element D2. One end of the fourth switching element S4 is connected in series with each other in parallel. The first series branch, the overvoltage protection element T2, the third one-way flow element D3 and the energy storage capacitor C1, and the other end of the fourth switching element S4 is connected to the gate of the power semiconductor device, the first series branch One end of the path is connected to the cathode of the power semiconductor device.
A drive protection circuit for a power semiconductor device according to claim 1, characterized in that the power semiconductor device includes a thyristor, a gate turn-off thyristor, an integrated gate commutation thyristor, an emitter turn-off thyristor, an insulating gate Bipolar transistor.
A driving protection circuit for a power semiconductor device according to claim 1, characterized in that the driving protection circuit includes one or a combination of a static protection unit and a dynamic protection unit.
A control method for a drive protection circuit of a power semiconductor device, characterized in that when the power is completely lost, the static protection unit and the dynamic protection unit operate, and the opening and closing modules do not operate;

During the power-on process, the static protection unit and the dynamic protection unit run first. When the power-on is completed, the switch and shutdown module are put into operation, and the static protection unit and the dynamic protection unit stop running;

Or when power-on is completed, the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and the static protection unit stops running at the same time;

Or when power-on is completed, the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and finally the static protection unit stops running;

Before powering off, the turn-on and turn-off module ensures that the potential difference between the gate and cathode of the power semiconductor device is less than the turn-on voltage of the gate and cathode of the power semiconductor device;

During the power-off process, the static protection unit and the dynamic protection unit operate, while the on/off module stops running;

Or during the power-off process, the static protection unit is put into operation first, while the opening and closing modules stop running, and finally the dynamic protection unit is put into operation;

Or during the power-off process, the static protection unit is put into operation first, then the turning on and off modules stop running, and finally the dynamic protection unit is put into operation.
A control method for a driving protection circuit of a power semiconductor device according to claim 10, characterized in that the static protection unit is used to ensure power when there is a complete loss of power, during the power-on process and during the power-off process. The potential difference between the gate and cathode of the semiconductor device is less than the turn-on voltage of the gate and cathode of the power semiconductor device. The dynamic protection units are used to ensure the gate potential of the power semiconductor device when a large instantaneous voltage occurs at the anode of the power semiconductor device. lower than the cathode potential.