CN208908438U - A kind of Drive Protecting Circuit of power semiconductor - Google Patents
A kind of Drive Protecting Circuit of power semiconductor Download PDFInfo
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- CN208908438U CN208908438U CN201821191039.6U CN201821191039U CN208908438U CN 208908438 U CN208908438 U CN 208908438U CN 201821191039 U CN201821191039 U CN 201821191039U CN 208908438 U CN208908438 U CN 208908438U
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Abstract
The utility model discloses a kind of Drive Protecting Circuits of power semiconductor; the Drive Protecting Circuit of power semiconductor includes driving unit and start and stop unit, and the driving unit and the start and stop unit are both connected between the gate pole of power semiconductor and cathode；Wherein, the start and stop unit includes start and stop module; the start and stop module is connected between the gate pole of power semiconductor and cathode, and is powered on and/or the process of lower electricity in power semiconductor Drive Protecting Circuit, and start and stop module is able to maintain that closure to protect power semiconductor.The Drive Protecting Circuit complexity is low; control method is simply easily realized; ensure that power semiconductor type component driving circuit power on or lower electric process in, will not be because withstanding voltage is excessively high between power semiconductor type device sun cathode and voltage change ratio is excessive due to leads to device failure between power semiconductor type device door cathode.
Description
Technical field
The utility model relates to electronic circuit technology field, the driving more particularly to a kind of power semiconductor is protected
Circuit.
Background technique
It is existing to be applied to thyristor-type device (such as thyristor, integrated gate commutated thyristor IGCT, the brilliant lock of emitter shutdown
Pipe ETO etc.) gate-drive protect circuit, under off state, provide certain reverse bias voltage to device door cathode, if
Door cathode voltage is unsatisfactory for certain reverse bias condition, then the withstanding voltage of thyristor-type device and voltage change ratio will not
Rated insulation voltage value can be reached.
Existing gate-drive protects circuit, and electrifying startup process needs capacitance group charging to predetermined voltage threshold, by
Limited in charge power, electrifying startup process generally requires 3-5 seconds.It should ensure that thyristor-type device is in during the charging process to close
Disconnected state, and high voltage or voltage change ratio cannot be applied between positive cathode, it otherwise may cause thyristor-type device over-voltage and hit
Wear damage.Therefore, in the application of thyristor-type device, thyristor-type device gate-drive power up need to be first completed, then will
Apply high-voltage electricity between positive cathode.Similar, thyristor-type device should can be just disconnected after anode-to-cathode voltage drops to certain value
Part gate-drive power supply.This also determines that the gate-drive of thyristor-type device cannot directly take electricity from main circuit, but needs
Using other electric power loops of low potential, high_voltage isolation power supply is carried out to thyristor-type device gate-drive unit.But this door
Pole Drive Protecting Circuit seriously limits the application of thyristor-type device, especially limitation thyristor-type device answering in high pressure field
With.
Utility model content
The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a kind of power semiconductor
The Drive Protecting Circuit of element can be effectively prevented from power semiconductor type device and power on using the Drive Protecting Circuit
Withstanding voltage is excessively high and/or in lower electric process, between positive cathode and voltage change ratio is excessive and leads to device failure.
In view of this, being adopted the purpose of this utility model is to provide a kind of Drive Protecting Circuit of power semiconductor
With following technical scheme: a kind of Drive Protecting Circuit of power semiconductor, including driving unit and start and stop unit, the drive
Moving cell and the start and stop unit are both connected between the gate pole of power semiconductor and cathode；Wherein,
The start and stop unit includes start and stop module, and the start and stop module is connected to the gate pole and cathode of power semiconductor
Between, and powered in power semiconductor Drive Protecting Circuit and/or the process of lower electricity, start and stop module are able to maintain that closure
To protect power semiconductor.
Further, the start and stop module includes first switching element, alternatively,
The start and stop module is also connected with the anode of power semiconductor, and the start and stop module include first switching element with
First capacitor, the first switching element is connected in series with first capacitor to be connect, and the first capacitor can pass through power semiconductor
The anode voltage of element is pre-charged.
Further, the driving unit includes opening module and for switch-off power for conducting power semiconductor element
First shutdown module of semiconductor element, wherein
It opens module and the first shutdown wired in parallel is connected between the gate pole of power semiconductor and cathode.
Further, the first shutdown module includes second switch element and the second capacitor, the second switch element and
Second capacitor is connected in series connection；Alternatively,
The first shutdown module includes second switch element.
It further, further include the second shutdown module, the first end of the driving unit and start and stop unit is partly led with power
The gate pole of volume elements part connects, and the driving unit is connect with the second end of start and stop unit with the first end of the second shutdown module, institute
The cathode of the second end and power semiconductor of stating the second shutdown module connects；Wherein,
The second shutdown module includes third switch element.
It further, further include charging module and control unit；
Described charging module one end connects power supply, and the other end, which is separately connected, opens module and the first shutdown module, for
It opens module and provides voltage with the first shutdown module；
Described control unit respectively with open module, first shutdown module and start and stop module connect, control unit can
According to the charging voltage for opening module with the first shutdown module, Xiang Kaitong module, the first shutdown module and start and stop module are sent
The shutdown or conducting of module, the first shutdown module and start and stop module are opened in trigger signal, control；Alternatively,
Described control unit respectively with open module, first shutdown module, second shutdown module and start and stop module connect,
Control unit can according to open module with first shutdown module charging voltage, Xiang Kaitong module, first shutdown module and
Start and stop module sends trigger signal, and the shutdown of module, the first shutdown module, the second shutdown module and start and stop module is opened in control
Or conducting.
Further, the power semiconductor includes integrated gate commutated thyristor (IGCT), the brilliant lock of emitter shutdown
Manage one or more of (ETO), door pole stream-exchanging thyristor (GCT), gate level turn-off thyristor (GTO).
After adopting the above technical scheme, the utility model has the advantages that compared with prior art
1, start and stop module constituent element is succinct, reliably, not only reduces the complexity of driving circuit, also save the cost,
It can be widely applied in the driving circuit of power semiconductor type device.
2, power semiconductor type component driving circuit power on or lower electric process in, start and stop module guarantee power partly lead
Reliable reverse bias or short circuit between body element type device door cathode, will not be because resistance between power semiconductor type device sun cathode
It is excessive by overtension and voltage change ratio and lead to device failure.
Detailed description of the invention
By referring to the drawings to the description of the utility model embodiment, the above-mentioned and other mesh of the utility model
, feature and advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the Drive Protecting Circuit schematic diagram according to the power semiconductor of the utility model embodiment one；
Fig. 2 is the Drive Protecting Circuit schematic diagram according to the power semiconductor of the utility model embodiment two；
Fig. 3 is the Drive Protecting Circuit schematic diagram according to the power semiconductor of the utility model embodiment three.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
Attached drawing in type embodiment clearly and completely illustrates the technical scheme in the embodiment of the utility model, it is clear that retouched
The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.Based on the implementation in the utility model
Example, every other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The range of the utility model protection.
Embodiment one
It is illustrated by taking integrated gate commutated thyristor IGCT as an example in the utility model embodiment, but and unlimited
In integrated gate commutated thyristor IGCT, the switching device of the thyristors type such as thyristor, emitter turn-off thyristor ETO
Suitable for the utility model.
In the present embodiment, power semiconductor can have control terminal (gate pole G) and current terminal (anode A and
Cathode K).
As shown in Figure 1, providing a kind of Drive Protecting Circuit of power semiconductor in the present embodiment, comprising: be used for
Protect the start and stop module of power semiconductor；Shutdown module 1 for switch-off power semiconductor element；And for function to be connected
Rate semiconductor element opens module；The start and stop module, opens module and is in parallel shutdown module 1, and start and stop module, closes
Disconnected module 1 is opened module and is connected in parallel between the gate pole of power semiconductor and cathode.
In the present embodiment, the Drive Protecting Circuit further includes charging module and control unit；Described charging module one end
Power supply is connected, the other end, which is separately connected, opens module and shutdown module 1, opens module and the shutdown offer voltage of module 1 to give；
Described control unit respectively with open module, shutdown module 1 and start and stop module and be connected, control unit can be according to
According to opening module and turning off the charging voltage of module 1, Xiang Kaitong module, shutdown module 1 and start and stop module send trigger signal,
Control opens module, shutdown module 1 and start and stop module and works.
In the present embodiment, the start and stop module includes first switching element, and the first switching element is connected to power half
Between the gate pole and cathode of conductor element.Preferably, the first switching element may include (but being not limited to) controllable switch, example
Such as closed type relay, JFET, MOSFET.
In the present embodiment, the shutdown module 1 include second switch element and the second capacitor, the second switch element and
It is connected between the gate pole and cathode of power semiconductor after the second capacitor series connection.Preferably, second switch element can
To include but is not limited to controllable switch, such as MOSFET.
In the present embodiment, by taking first switching element and second switch element are MOSFET as an example, then first switching element
It include the drain terminal as current terminal, source terminal and as the gate terminal of control terminal with second switch element；
Wherein, the gate pole of the drain electrode of first switching element and power semiconductor connection, source electrode and power semiconductor cathode
Connection and grid are connect with control unit；
The connection of the gate pole of the drain electrode of second switch element and power semiconductor, source electrode connect after the second capacitor with power
The cathode of semiconductor element connects and grid is connect with control unit.
In the present embodiment, Drive Protecting Circuit during powering on, power supply by charging module to open module and close
The second capacitor in disconnected module 1 charges, when opening module and turning off the charging voltage of module 1 and be not up to preset threshold, tool
Body the following steps are included:
Control unit issues low pressure trigger signal to start and stop module and shutdown module 1, makes the first switch member of start and stop module
Part closure maintains closed state, turns off the second switch element OFF of module 1 or maintains off state, then start and stop module is led
Logical, shutdown module 1 is held off, then short-circuit between the gate pole and cathode of power semiconductor.Start and stop module is connected so that function
It is short-circuit between the gate pole and cathode of rate semiconductor element, to guarantee that thyristor-type device will not be because of withstanding voltage mistake between positive cathode
High and voltage change ratio is excessive and damages.
In the present embodiment, after the completion of Drive Protecting Circuit powers on, module is opened with the charging voltage for turning off module 1 and reaches pre-
If when threshold value, specifically includes the following steps:
Control unit sends high-voltage trigger signal to start and stop module and shutdown module 1, makes the first switch member of start and stop module
Second switch element closure in part shutdown, and shutdown module 1, then the shutdown of start and stop module, shutdown module 1 are connected, to close
The second capacitor being pre-charged in disconnected module 1 applies reverse bias voltage between the gate pole and cathode of power semiconductor.
In the present embodiment, Drive Protecting Circuit is during lower electricity, the voltage of the second capacitor in the shutdown module 1
In preset threshold hereinafter, then control unit to start and stop module and turns off the transmission low pressure trigger signal of module 1, start and stop module and pass
The result of the action of disconnected module 1 is identical in power up as Drive Protecting Circuit, turns off start and stop module on, off module 1,
It is short-circuit between the gate pole of power semiconductor and cathode to make.
In the present embodiment, Drive Protecting Circuit powered on, is powered in completion and lower electric process, it is described open module without
Work；Alternatively, control unit does not send trigger signal or transmission low pressure trigger signal to module is opened, opens module and do not touched
Hair.
In the present embodiment, the low pressure trigger signal can be 0 voltage triggering signal or lower voltage trigger signal.
In the present embodiment, Drive Protecting Circuit is not when powering on, Triggerless in Drive Protecting Circuit, open module,
Shutdown module 1, start and stop module are not triggered；Preferably, first switching element can be kept closed, second switch element
It can be held off.
In the present embodiment, after the completion of Drive Protecting Circuit powers on, when wanting conducting power semiconductor element, module 1 is turned off
It is turned off with start and stop module, opens gate pole Injection Current of the module to power semiconductor, so that power semiconductor is connected.
It when wanting switch-off power semiconductor element, opens module and does not work with start and stop module, second switch element closure makes
It turns off module 1 to be connected, to pass through the second capacitor being pre-charged by electric current from cathode change of current the to gate pole, so that semiconductor power element
Part shutdown.
In the present embodiment, the power semiconductor is thyristor-type device, may include (but being not limited to) brilliant lock
Pipe, integrated gate commutated thyristor IGCT, emitter turn-off thyristor (ETO) door pole stream-exchanging thyristor (GCT), gate electrode capable of switching off
Thyristor (GTO) etc..
Embodiment two
It illustrates, but is not limited to by taking emitter turn-off thyristor ETO as an example in the utility model embodiment
Emitter turn-off thyristor ETO, the thyristors such as thyristor, door pole stream-exchanging thyristor (GCT), gate level turn-off thyristor (GTO)
The switching device of type may be applicable to the utility model.
In the present embodiment, power semiconductor can have control terminal (gate pole G) and current terminal (anode A and
Cathode K).
As shown in Fig. 2, providing a kind of Drive Protecting Circuit of power semiconductor in the present embodiment, comprising: be used for
Conducting power semiconductor element opens module；Shutdown module 1 and shutdown module 2 for switch-off power semiconductor element；With
In the start and stop module of protection power semiconductor；It is parallel with one another to open module, shutdown module 1 and start and stop module, turns off module 2
The cathode of first end and power semiconductor connection, thus open module, shutdown module 1 and start and stop module first end with
The gate pole of power semiconductor connects, and opens the of module, the second end of shutdown module 1 and start and stop module and shutdown module 2
One end connection.
In the present embodiment, the start and stop module includes first switching element, and the first switching element may include (but not
It is limited to) controllable switch, such as closed type relay, JFET, MOSFET etc..
In the present embodiment, the shutdown module 1 includes first switching element, and shutdown module 2 includes second switch element；The
One switch element and second switch element may each comprise (but being not limited to) controllable switch, such as MOSFET.
In the present embodiment, by taking first switching element, second switch element and third switch element are MOSFET as an example,
Then first switching element, second switch element and third switch element include drain terminal, the source electrode as current terminal
Terminal and gate terminal as control terminal；Wherein, the gate pole of the drain electrode of first switching element and power semiconductor connects
It connects, the source electrode connection of source electrode and third switch and grid are connect with control unit；
The connection of the gate pole of the drain electrode of second switch element and power semiconductor, source electrode and third switch element source electrode
Connection and grid are connect with control unit；
The drain electrode of third switch element and cathode connection, grid and the control unit of power semiconductor connect.
It further include charging module and control unit in the present embodiment, charging module one end connects power supply, and the other end connects respectively
It connects and opens module and shutdown module 1, provide voltage to give to open module and turn off module 1；
Control unit respectively with open module, shutdown module 1, start and stop module and shutdown module 2 be connected, control unit
It can be according to opening module and turning off the charging voltage of module 1, module, shutdown module 1, start and stop module and shutdown are opened in control
The shutdown or conducting of module 2.
In the present embodiment, during powering on, power supply is carried out by charging module to module is opened Drive Protecting Circuit
Charging, when opening the charging voltage of module and being not up to preset threshold, specifically includes the following steps: control unit to start and stop module,
Module 1, the shutdown sending low pressure trigger signal of module 2 are turned off, the first switching element of start and stop module is made to be closed or maintain closed form
State turns off the second switch element of module 1, turns off the third switch element shutdown of module 2 or maintain off state, then start and stop mould
Block on, off module 1 and shutdown module 2 turn off, and make short-circuit between the gate pole of power semiconductor and cathode.
In the present embodiment, after the completion of Drive Protecting Circuit powers on, opens module and reach with the charging voltage for turning off module
When preset threshold, specifically includes the following steps: control unit sends high-voltage trigger signal, Xiang Guan to start and stop module, shutdown module 1
Disconnected module 2 sends low pressure trigger signal, turns off the first switching element of start and stop module, turns off the second switch element of module 1
The third switch element of closure, shutdown module 2 maintains off state, then the shutdown of start and stop module, shutdown module 1 are connected, and turns off mould
Block 2 turns off, and makes short-circuit between the gate pole of power semiconductor and cathode.
In the present embodiment, for Drive Protecting Circuit during lower electricity, the charging voltage in the shutdown module is in pre-
If when below threshold value, then control unit sends low pressure trigger signal to start and stop module and shutdown module 1 and shutdown module 2, open
The result of the action for stopping module, shutdown module 1 and shutdown module 2 is identical with Drive Protecting Circuit power up, makes start and stop mould
Block on, off module 1 and shutdown module 2 turn off, to make short-circuit between the gate pole of power semiconductor and cathode.
In the present embodiment, Drive Protecting Circuit powered on, is powered in completion and lower electric process, it is described open module without
Work；Alternatively, control unit does not send trigger signal or transmission low pressure trigger signal to module is opened, opens module and do not touched
Hair.
In the present embodiment, the low pressure trigger signal can be 0 voltage triggering signal or lower voltage trigger signal.
In the present embodiment, Drive Protecting Circuit is not when powering on, Triggerless in Drive Protecting Circuit, open module,
Shutdown module 1, shutdown module 2 and start and stop module are not triggered；Preferably, first switching element can remain closed shape
State, second switch element can be held off with third switch element.
In the present embodiment, after the completion of Drive Protecting Circuit powers on, when wanting conducting power semiconductor element, module 1 is turned off
It does not work with start and stop module, opens module and shutdown module 2 is connected, open module to the gate pole of power semiconductor and inject electricity
Stream, so that power semiconductor is connected；
It when wanting switch-off power semiconductor element, opens module and does not work with start and stop module, turn off the second switch of module 1
Element closure, shutdown module 2 third switch element shutdown, make turn off module 1 be connected, shutdown module 2 turn off, thus electric current from
The cathode change of current of power semiconductor is to gate pole, so that power semiconductor turns off.
In the present embodiment, when conducting power semiconductor element, control unit sends high-voltage trigger signal to shutdown module 2,
Make to turn off the conducting of module 2.
In the present embodiment, the power semiconductor is thyristor-type device, may include (but being not limited to) brilliant lock
Pipe, integrated gate commutated thyristor IGCT, emitter turn-off thyristor (ETO) door pole stream-exchanging thyristor (GCT), gate electrode capable of switching off
Thyristor (GTO) etc..
Embodiment three
It is illustrated by taking integrated gate commutated thyristor IGCT as an example in the utility model embodiment, but and unlimited
In integrated gate commutated thyristor IGCT, the switching device of the thyristors type such as thyristor, emitter turn-off thyristor ETO
Suitable for the utility model.
As shown in figure 3, providing the Drive Protecting Circuit and embodiment one of a kind of power semiconductor in the present embodiment
In circuit structure shown in FIG. 1 it is essentially identical, the difference is that start and stop module, in Fig. 3 start and stop module also with power semiconductor
The anode of element connects, and start and stop module includes first switching element and first capacitor, first switching element and first capacitor
Series connection, the anode voltage of power semiconductor can be pre-charged to first capacitor.
In the present embodiment, Drive Protecting Circuit during powering on, power supply by charging module to open module and close
Disconnected module 1 charges, and when opening module and turning off the charging voltage of module 1 and be not up to preset threshold, specifically includes following step
Rapid: control unit issues low pressure trigger signal to start and stop module, so that the first switching element of start and stop module is maintained closed state, opens
Stop module conducting, the anode voltage of power semiconductor is pre-charged first capacitor, thus the first capacitor of precharge
Apply reverse bias voltage between the gate pole and cathode of power semiconductor.
In the present embodiment, after the completion of Drive Protecting Circuit powers on, opens module and reach with the charging voltage for turning off module 1
When threshold value, then the rate-determining steps of Drive Protecting Circuit are the same as example 1, and start and stop module shutdown, shutdown module 1 is connected, then are closed
The second capacitor being pre-charged in disconnected module 1 applies reverse bias voltage between the gate pole and cathode of power semiconductor.
In the present embodiment, Drive Protecting Circuit is during lower electricity, the voltage of the second capacitor in the shutdown module 1
When below preset threshold, specifically includes the following steps: control unit sends low-voltage touching to start and stop module and shutdown module 1
It signals, start and stop module and the result of the action of shutdown module 1 are identical with Drive Protecting Circuit power up, lead start and stop module
Logical, shutdown module 1 turns off, to make the first capacitor being pre-charged in start and stop module in the gate pole and cathode of power semiconductor
Between apply reverse bias voltage.
In the present embodiment, when wanting conducting power semiconductor element and/or switch-off power semiconductor element, driving protection electricity
The rate-determining steps on road are the same as example 1.
In the present embodiment, the power semiconductor is thyristor-type device, may include (but being not limited to) brilliant lock
Pipe, integrated gate commutated thyristor IGCT, emitter turn-off thyristor (ETO) door pole stream-exchanging thyristor (GCT), gate electrode capable of switching off
Thyristor (GTO) etc..
Power semiconductor type component driving circuit execution power on or lower electric process in, start and stop module guarantees power half
Reliable reverse bias or short circuit between conductor element type device door cathode, will not be because between power semiconductor type device sun cathode
Withstanding voltage is excessively high and voltage change ratio is excessive and leads to device failure.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, for this field
For technical staff, the utility model can have various modifications and changes.All institutes within the spirit and principle of the utility model
Any modification, equivalent substitution, improvement and etc. of work, should be included within the scope of protection of this utility model.
Claims (7)
1. a kind of Drive Protecting Circuit of power semiconductor, it is characterised in that: described including driving unit and start and stop unit
Driving unit and the start and stop unit are both connected between the gate pole of power semiconductor and cathode；Wherein,
The start and stop unit includes start and stop module, the start and stop module be connected to power semiconductor gate pole and cathode it
Between, and powered on and/or the process of lower electricity in power semiconductor Drive Protecting Circuit, start and stop module be able to maintain that closure with
Protect power semiconductor.
2. the Drive Protecting Circuit of power semiconductor according to claim 1, it is characterised in that: the start and stop module
Including first switching element, alternatively,
The start and stop module is also connected with the anode of power semiconductor, and the start and stop module includes first switching element and first
Capacitor, the first switching element is connected in series with first capacitor to be connect, and the first capacitor can pass through power semiconductor
Anode voltage be pre-charged.
3. the Drive Protecting Circuit of power semiconductor according to claim 1, it is characterised in that: the driving unit
Module is turned off with first for switch-off power semiconductor element including the module of opening for conducting power semiconductor element,
In,
It opens module and the first shutdown wired in parallel is connected between the gate pole of power semiconductor and cathode.
4. the Drive Protecting Circuit of power semiconductor according to claim 3, it is characterised in that: first shutdown
Module includes second switch element and the second capacitor, and the second switch element is connected in series with second capacitor and connect；Alternatively,
The first shutdown module includes second switch element.
5. the Drive Protecting Circuit of power semiconductor according to claim 1, it is characterised in that: further include the second pass
Disconnected module, the driving unit are connect with the gate pole of power semiconductor with the first end of start and stop unit, and the driving is single
Member is connect with the second end of start and stop unit with the first end of the second shutdown module, the second end and power of the second shutdown module
The cathode of semiconductor element connects；Wherein,
The second shutdown module includes third switch element.
6. the Drive Protecting Circuit of -5 any power semiconductors according to claim 1, it is characterised in that: further include
Charging module and control unit；
Described charging module one end connects power supply, and the other end, which is separately connected, opens module and the first shutdown module, is used for open-minded
Module provides voltage with the first shutdown module；
Described control unit respectively with open module, first shutdown module and start and stop module connect, control unit being capable of basis
The charging voltage of module with the first shutdown module is opened, Xiang Kaitong module, the first shutdown module and start and stop module send triggering
The shutdown or conducting of module, the first shutdown module and start and stop module are opened in signal, control；Alternatively,
Described control unit respectively with open module, first shutdown module, second shutdown module and start and stop module connect, control
Unit can be according to the charging voltage for opening module with the first shutdown module, Xiang Kaitong module, the first shutdown module and start and stop
Module sends trigger signal, and control is opened the shutdown of module, the first shutdown module, the second shutdown module and start and stop module or led
It is logical.
7. the Drive Protecting Circuit of power semiconductor according to claim 1, it is characterised in that: the power is partly led
Volume elements part include integrated gate commutated thyristor (IGCT), emitter turn-off thyristor (ETO), door pole stream-exchanging thyristor (GCT),
One or more of gate level turn-off thyristor (GTO).
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| CN201821191039.6U CN208908438U (en) | 2018-07-25 | 2018-07-25 | A kind of Drive Protecting Circuit of power semiconductor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108718193A (en) * | 2018-07-25 | 2018-10-30 | 清华大学 | A kind of Drive Protecting Circuit and its control method of power semiconductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108718193A (en) * | 2018-07-25 | 2018-10-30 | 清华大学 | A kind of Drive Protecting Circuit and its control method of power semiconductor |
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