WO2023208107A1 - 太阳电池及其制备方法和应用 - Google Patents

太阳电池及其制备方法和应用 Download PDF

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WO2023208107A1
WO2023208107A1 PCT/CN2023/091139 CN2023091139W WO2023208107A1 WO 2023208107 A1 WO2023208107 A1 WO 2023208107A1 CN 2023091139 W CN2023091139 W CN 2023091139W WO 2023208107 A1 WO2023208107 A1 WO 2023208107A1
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Prior art keywords
solar cell
silicon
wafer substrate
silicon wafer
layer
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PCT/CN2023/091139
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English (en)
French (fr)
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范建彬
孟夏杰
邢国强
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通威太阳能(眉山)有限公司
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Publication of WO2023208107A1 publication Critical patent/WO2023208107A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of batteries, and in particular to a solar cell and its preparation method and application.
  • the battery Due to the design of the front surface of the back-contact solar cell without grid electrodes, it does not block the light and can maximize the use of incident light. Combined with the pyramid suede structure and the light trapping structure composed of the anti-reflection film used on the front of the cell, the battery has a high The optical loss is reduced, effectively improving the short-circuit current density of the battery.
  • interdigitated back-contact solar cells due to the particularity of the device structure (the metal electrode is located on the back of the cell, and the positive and negative electrodes are arranged in a cross-finger shape), do not need to consider the contact resistance on the front, and can further optimize the front surface light trapping. and passivation performance; the backside can optimize the metal gate line electrode, thereby reducing the series resistance and thus improving the fill factor.
  • the texturing process often involves laser treatment of the back side of the cell substrate.
  • a thin layer of silicon oxide/silica will be produced due to the action of the laser and the doped area on the back side.
  • the silicon/polycrystalline silicon mixture is not easily corroded by the texturing liquid within the effective texturing time, that is, it cannot complete the effective etching of the laser-processed area on the substrate, resulting in the phenomenon that the etching cannot be continued (as shown in Figure 1(a) )), or only local etching (as shown in Figure 1(b)). Therefore, it is difficult to achieve the effect of texturing the front side of the battery and etching the back side of the battery by the texturing process.
  • This application provides a method for preparing a solar cell, which includes the following steps:
  • S10 Provide a silicon wafer substrate, the silicon wafer substrate having a first surface and a second surface opposite to the first surface;
  • S20 Form a silicon-containing film on the first surface of the silicon wafer substrate.
  • the silicon-containing film includes a silicon oxide layer, a doped layer and a mask sequentially formed on the first surface of the silicon wafer substrate. layer;
  • S40 Place the silicon wafer substrate with the silicon-containing film and the patterned area in an alkaline solution containing a strong monobasic base for pretreatment, prepare a pretreated silicon wafer substrate, and perform the pretreatment
  • the silicon wafer substrate is placed in a texturing liquid containing a strong monobasic base for texturing treatment, wherein the concentration of the monobasic strong base material in the alkaline solution used in the pretreatment process is greater than that used in the texturing process.
  • the concentration of monobasic substances in the texturing liquid is
  • the strong monobasic base is selected from at least one of potassium hydroxide and sodium hydroxide.
  • the concentration of the strong monobasic substance in the alkaline solution is 0.3 mol/L to 2 mol/L.
  • the alkaline solution treatment time is 10s to 200s.
  • the alkaline solution treatment temperature is 60°C to 80°C.
  • step S20 the silicon oxide layer is deposited on the first surface through plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, thermal oxygen or chain oxygen, and then the silicon oxide layer is deposited on the first surface through plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, thermal oxygen or chain oxygen.
  • the doping layer and the mask layer are deposited on the silicon oxide layer by a method of enhanced chemical vapor deposition or low pressure chemical vapor deposition.
  • step S30 and before step S40 it also includes using hydrofluoric acid with a concentration of 4 mol/L to 6 mol/L to treat the silicon-containing film plated around the second surface of the substrate.
  • hydrofluoric acid with a concentration of 4 mol/L to 6 mol/L to treat the silicon-containing film plated around the second surface of the substrate.
  • the texturing process in step S40 includes: placing the pre-processed silicon wafer substrate in a texturing liquid containing a strong monobasic substance with a concentration of 0.15 mol/L to 0.35 mol/L. Texture processing is carried out in the process to prepare a silicon wafer substrate with a textured surface.
  • step S50 is further included: A first passivation film layer and a first anti-reflection film layer are sequentially formed on the first surface of the textured silicon wafer substrate.
  • the step S50 is further included: sequentially forming a second passivation film on the second surface of the silicon wafer substrate with textured surface. layer and a second anti-reflective coating layer.
  • step S60 is also included: using a laser to pattern holes in the patterned area on the first surface, and preparing the first first surface through screen printing. electrode and a second electrode.
  • this application also provides a solar cell, which is produced according to the above-mentioned solar cell preparation method.
  • the present application further provides a photovoltaic system, including a solar cell module and auxiliary equipment.
  • the solar cell module includes the above-mentioned solar cell.
  • the silicon wafer substrate having the silicon-containing film and the patterned area is placed in a solution containing a monovalent strong alkali. Treat it in an alkaline solution and then perform texturing treatment.
  • the concentration of the monovalent strong alkali substance in the alkaline solution is greater than the concentration of the monovalent strong alkali substance in the texturing liquid.
  • the above alkaline solution treatment can not only effectively remove the additional film layer formed during laser treatment, but also remove the mask layer, doped layer and silicon oxide generated by the front side of the plating through hydrofluoric acid treatment and alkaline solution treatment. layer, so that in the subsequent texturing process, the substrate surface can be effectively textured and the patterned area formed after laser processing can be effectively etched at the same time, ensuring good appearance of the front side of the battery and battery performance.
  • Figure 1 shows the etching effect on the back side of the solar cell (a) the etching cannot be continued, (b) partial etching;
  • Figure 2 shows the appearance of solar cells (a) normal appearance, (b) bad appearance;
  • FIG. 3 is a flow chart of solar cell preparation according to the present application.
  • Figure 4 is a bottom view of the patterned area after patterning the silicon-containing film
  • Figure 5 is a bottom view after opening holes in the patterned area
  • FIG. 6 shows the structure of the solar cell of this application
  • Figure 7 is a bottom view of the solar cell of the present application.
  • this application provides a method for preparing a solar cell 10, which includes the following steps.
  • Step S10 Provide a silicon wafer substrate 110.
  • the silicon wafer substrate 110 has a first surface and a second surface opposite to the first surface.
  • first surface is the backlight surface of the battery, also called the back surface
  • second surface is the light-receiving surface of the battery, also called the front surface
  • step S10 the silicon wafer substrate 110 is also subjected to damage removal processing, polishing processing and cleaning processing.
  • the damage removal treatment includes: using a strong monobasic base containing a substance with a concentration of 0.6 mol/L to 0.8 mol/L to perform treatment at 50°C to 70°C.
  • the temperature of the damage removal treatment may be, but is not limited to, 50°C, 55°C, 60°C, 65°C or 70°C.
  • the solution for the damage removal treatment is a mixed solution with a mass percentage of 46% sodium hydroxide solution and water, with a volume ratio of 4:96 to 6:94.
  • the polishing process includes: using a strong monobasic base containing substances with a concentration of 0.6 mol/L to 0.8 mol/L.
  • the solution is processed at 65°C to 85°C to achieve a post-polishing reflectivity of 20% to 40%.
  • the above-mentioned post-polishing reflectivity may be, but is not limited to, 20%, 25%, 30%, 35% or 40%.
  • the polished reflectivity of the silicon wafer substrate 110 is 30%.
  • the cleaning process includes: sequentially using a mixed solution of hydrofluoric acid and hydrochloric acid, deionized water, and drying.
  • Step S20 Form a silicon-containing film 124 on the first surface of the silicon wafer substrate 110.
  • the silicon-containing film 124 includes a silicon oxide layer 121, a doped layer 122 and a mask layer 123 sequentially formed on the silicon wafer substrate 110.
  • the silicon-containing film 124 includes a silicon oxide layer 121 , a doping layer 122 and a mask layer 123 sequentially stacked on the first surface of the silicon wafer substrate 110 .
  • the thickness of the silicon oxide layer 121 is 0.5nm ⁇ 3nm
  • the thickness of the doping layer 122 is 30nm ⁇ 300nm
  • the thickness of the mask layer 123 is 10nm ⁇ 100nm.
  • a silicon oxide layer 121 is deposited on the first surface by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, thermal oxygen or chain oxygen, and then the silicon oxide layer is deposited on the first surface by plasma enhanced chemical vapor deposition or low pressure chemical vapor deposition.
  • Doped layer 122 and mask layer 123 are deposited on 121 .
  • the silicon oxide layer 121 is formed by plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, thermal oxygen or chain oxygen.
  • the oxide layer is prepared by low-pressure chemical vapor deposition at a temperature of 500°C to 650°C.
  • the formation method of the doping layer 122 and the mask layer 123 is simultaneously plasma enhanced chemical vapor deposition or low pressure chemical vapor deposition.
  • the formation method of the doping layer 122 and the mask layer 123 is plasma enhanced chemical vapor deposition at the same time. Furthermore, the formation method of the doping layer 122 and the mask layer 123 can also be low pressure chemical vapor deposition at the same time.
  • one method of forming the doping layer 122 is a low-pressure chemical vapor deposition method, which is to deposit the material of the doping layer 122 on the silicon oxide layer 121 at a temperature of 500°C to 650°C, and at a temperature of 800°C to 650°C. 950° C. to convert amorphous silicon into polysilicon. Finally, a certain amount of oxygen is introduced into the furnace tube, and the material of the mask layer 123 is grown on the outside.
  • Another method for forming the doped layer 122 is low-pressure chemical vapor deposition, which is to deposit intrinsic amorphous silicon on the silicon oxide layer 121 at 500°C to 650°C, and then use doping element diffusion and pre-deposition.
  • the gas introduced during this process includes not only doping gas source and oxygen, but amorphous silicon is converted into polycrystalline silicon at the above temperature.
  • PECVD plasma enhanced chemical vapor deposition
  • the silicon oxide layer 121 is formed by peroxidation, and then phosphorane PH 3 and silane SiH 4 are introduced to deposit doped amorphous silicon, that is, the doping layer 122, and then laughing gas N 2 O and silane SiH 4 are introduced to form an oxide layer on the outermost side.
  • Silicon is used as the mask layer 123, and subsequent annealing treatment is required.
  • the temperature of the annealing treatment is 800°C to 950°C, and the annealing treatment time is 20min to 50min.
  • the purpose of the annealing treatment is to promote the transformation of amorphous silicon into polysilicon and promote grain growth, while making the silicon oxide mask layer 123 denser so that it will not be corroded in the subsequent alkaline solution treatment.
  • the conductivity types of the doping layer 122 and the silicon wafer substrate 110 are each independently selected from N-type or P-type, and the conductivity types of the doping layer 122 and the silicon wafer substrate 110 are different.
  • the doping layer 122 is N-type, and preferably the doping material is phosphorus.
  • the material of the doping layer 122 may be, but is not limited to, phosphorus-doped polysilicon.
  • the material of the mask layer 123 may be, but is not limited to, silicon oxide.
  • Step S30 Use a laser to pattern the silicon-containing film on the first surface to form a patterned region 111 on the first surface of the silicon substrate 110.
  • a picosecond laser is used to remove the silicon-containing film 124 in a partial area on the first surface of the silicon wafer substrate 110 using ultraviolet 355 nm or 532 nm nano-laser to form a patterned area 111 with a width of 300 ⁇ m to 500 ⁇ m, and remove or Part of the silicon-containing film in the patterned area 111 is destroyed, making it more susceptible to corrosion by the alkali solution.
  • FIG. 4 is a bottom view of the patterned area 111 after the silicon-containing film 124 is patterned.
  • Step S40 Treat the silicon wafer substrate 110 with the silicon-containing film 124 and the patterned area 111 in an alkaline solution containing a strong monobasic substance with a concentration of 0.3 mol/L to 2 mol/L to prepare pretreated silicon.
  • the pre-processed silicon wafer substrate 110 is subjected to texturing treatment.
  • a step of treating the mask layer material surrounding the second surface of the substrate 110 with a hydrofluoric acid solution having a concentration of 4 mol/L to 6 mol/L is also included.
  • the non-laser area that is, the silicon oxide mask layer 123 on the first surface except the patterned area 111 can still protect the doped layer 122 in the non-laser area during subsequent alkali solution treatment and texturing solution treatment.
  • the second surface of the substrate 110 is brought into contact with the hydrofluoric acid solution to remove the silicon oxide mask layer produced by the circumferential plating, and the cleaning time is 60 to 240 seconds.
  • hydrofluoric acid solution uses a mass fraction of 49% hydrofluoric acid and water to be mixed with a volume ratio of (10-30): (70-90).
  • a mass fraction of 49% hydrogen is used.
  • Hydrofluoric acid solution is prepared by mixing hydrofluoric acid and water in a ratio of 20:80.
  • the strong monobasic base is selected from at least one of potassium hydroxide and sodium hydroxide.
  • the treatment time of the alkaline solution is 10s to 200s.
  • processing time may be, but is not limited to, 10s, 30s, 50s, 70s, 90s, 110s, 130s, 150s, 170s, 190s or 200s.
  • the treatment temperature of the alkaline solution is 60°C to 80°C.
  • treatment temperature may be, but is not limited to, 60°C, 65°C, 70°C, 75°C or 80°C.
  • the silicon wafer substrate having the silicon-containing film 124 and the patterned area 111 is Treat it with an alkaline solution containing a strong monobasic substance with a concentration of 0.3 mol/L to 2 mol/L, and then perform texturing treatment.
  • the above alkaline solution treatment can not only effectively remove the additional film formed during laser treatment layer and can remove the silicon-containing film plated around the second surface, so that in the subsequent texturing process, the surface of the substrate 110 can be effectively textured and the patterned area formed after the laser processing can be effectively etched at the same time, ensuring that The front of the battery looks good as well as the battery performance.
  • traditional preparation methods of the silicon-containing film 124 such as plasma enhanced chemical vapor deposition (PECVD) or low pressure chemical vapor deposition (LPCVD), can easily form bypass plating on the front side of the silicon wafer substrate 110.
  • PECVD plasma enhanced chemical vapor deposition
  • LPCVD low pressure chemical vapor deposition
  • hydrofluoric acid Removing the thicker silicon oxide mask layer 123 on the second surface of the substrate 110 and using alkaline solution treatment together can remove all the plating formed on the second surface of the substrate 110, that is, the light-receiving surface, which is beneficial to Subsequent texturing is performed, especially texturing on the second surface of the substrate 110, that is, the light-receiving surface.
  • the alkaline solution also includes an additive, and the additive may be, but is not limited to, Topband BP31.
  • volume ratio of the sodium hydroxide solution with a mass fraction of 46%, additives and water in the above alkaline solution is (15-25): (1-5): (400-480).
  • the volume ratio of the sodium hydroxide solution with a mass fraction of 46%, additives and water in the above alkaline solution is 20: (1-5): (400-480).
  • the organic groups contained in the additive will be adsorbed on the mask layer 123 Above, a barrier is formed to prevent the mask layer 123 from reacting with the alkaline solution.
  • the catalyst in the additive will accelerate the reaction speed between the alkaline solution and silicon.
  • the silicon-containing film 124 and the silicon wafer substrate 110 after the laser patterning process are immersed in the above-mentioned alkaline solution. Through the coordination of the alkaline solution processing temperature, alkaline solution processing time and alkaline solution concentration, not only can the circumference be effectively removed.
  • the plating and the laser-processed area on the back side of the substrate 110 produce excess film layers, and also protect the mask layer 123 on the surface of the doped layer 122 on the back side that has not been laser-processed to prevent the doped layer 122 in the non-laser-processed area from being exposed.
  • the silicon oxide mask layer 123, doping layer 122 and silicon oxide layer 121 generated due to the plating on the front side can be removed, ensuring a uniform state of the front side of the substrate 110 before texturing. and the uniformity of subsequent texturing.
  • the short-time alkaline solution treatment also has a certain pre-etching effect on the back laser area, that is, the extra material film layer formed during the laser treatment is removed, and the front texturing can be achieved within the effective time of subsequent texturing while also the back surface can be texturized.
  • the silicon-containing film 124 that may remain after the pre-etching is etched to the first surface and continues to be etched, or the first surface is directly etched without any remaining silicon-containing film 124 .
  • a certain height difference is formed between the surface of the laser-processed area and the surface of the connected non-laser area (that is, the height difference between the connected doping layer 122 and the substrate 110), which is greater than 1 ⁇ m, thereby ensuring that the laser-processed area is The original doped layer 122 is completely removed to avoid failure or inefficiency of the prepared battery.
  • the pre-processed silicon wafer substrate 110 is subjected to texturing treatment: the silicon wafer substrate 110 with the silicon-containing film and the patterned area 111 is placed in a concentration of 0.15 mol/L to 0.35 mol of the substance.
  • the texturing process is carried out in a monobasic strong alkali texturing liquid of /L for a texturing time of 400s to 600s to prepare a silicon wafer substrate 110 with a textured surface.
  • the purpose of texturing is to form a pyramid-shaped texture surface on the second surface of the substrate 110, that is, the light-receiving surface.
  • the patterned area 111 will form an etching depth of 1 to 6 ⁇ m. Because the texturing alkali solution is used for etching, the patterning of the first surface is Area 111 is also suede. Since the non-patterned area 111 on the first surface of the substrate 110 is completely protected by the silicon oxide mask layer 123, it is not corroded in the alkaline solution and texturing solution in step S40.
  • the above-mentioned texturing liquid may also include additives, wherein the additives may be but are not limited to Shichuang ST10.
  • the silicon wafer substrate 110 having the textured surface may also be subjected to steps that may include but are not limited to water washing, alkali washing, water washing, pickling, water washing and drying.
  • alkali cleaning uses a sodium hydroxide aqueous solution with an amount of 0.1% to 0.2% of the substance for cleaning.
  • pickling uses an acid solution containing hydrofluoric acid to remove the outermost non-patterned area outside the patterned area 111 on the first surface of the substrate 110 .
  • Side oxide silicon mask layer 123 uses an acid solution containing hydrofluoric acid to remove the outermost non-patterned area outside the patterned area 111 on the first surface of the substrate 110 .
  • step S50 is also included: sequentially forming a first passivation on the first surface of the silicon wafer substrate 110 with a textured surface and the composite film layer 120 film layer 130 and the first anti-reflection film layer 150 .
  • first passivation film layer 130 and the first anti-reflection film layer 150 are sequentially formed on the first surface of the silicon wafer substrate 110 with texture, the silicon oxide layer 121 and the doped layer 122 .
  • a second passivation film 140 and a second anti-reflection film layer 160 are sequentially formed on the second surface of the textured silicon wafer substrate 110 .
  • first passivation film layer 130 and the second passivation film layer 140 can be, but is not limited to, atomic layer deposition. Further, the materials of the first passivation film layer 130 and the second passivation film The layer 140 material may be, but is not limited to, aluminum oxide.
  • the thickness of the first passivation film layer 130 is 2 nm to 25 nm
  • the thickness of the second passivation film layer 140 is 2 nm to 25 nm.
  • first anti-reflection film layer 150 and the second anti-reflection film layer 160 can be, but is not limited to, plasma enhanced chemical vapor deposition. Further, the materials of the first anti-reflection film layer 150 and the second anti-reflection film layer The material of the film layer 160 may be, but is not limited to, at least one of silicon oxide and silicon nitride.
  • the thickness of the first anti-reflection film layer 150 is 50 nm to 150 nm
  • the thickness of the second anti-reflection film layer 160 is 60 nm to 150 nm.
  • the material of the first anti-reflection film layer 150 and the material of the second anti-reflection film layer 160 contains silicon oxide and silicon nitride materials, and is a stack of two layers of materials.
  • step S60 is also included: using a laser to pattern holes in the patterned area on the first surface, and preparing the first electrode 170 and the second electrode 180 through screen printing.
  • a laser is used to pattern the patterned area 111 on the first surface with a hole width of 30 ⁇ m to 50 ⁇ m, and the passivation film layer and the anti-reflection film layer at the hole are removed to form the first electrode 170 contact area.
  • the opening areas are distributed in a dotted line or dot shape, as shown in FIG. 5 , a bottom view of the patterned area 111 after opening holes.
  • the above-mentioned method of forming the first electrode 170 and the second electrode 180 may be, but is not limited to, screen printing.
  • the first electrode 170 in contact with the doped layer 122 does not need to be drilled.
  • the first electrode preferably uses a burn-through electrode slurry.
  • the first passivation film layer 130, the first anti-reflection film layer 150 and the doped layer can be burned through at high temperature.
  • the hybrid layer 122 forms a contact, while the substrate 110 is only in partial contact. Non-burn-through electrode slurry is used, so the non-burn-through slurry forms contact with the substrate 110 at the laser opening.
  • first electrode 170 and the second electrode 180 are metal electrodes, and the materials of the first electrode 170 and the second electrode 180 are each independently selected from one of, but not limited to, aluminum and silver.
  • FIG. 6 the present application also provides a solar cell 10 , which is manufactured according to the above-mentioned preparation method of the solar cell 10 .
  • FIG. 7 is a bottom view of the solar cell 10 .
  • the above solar cell 10 obtained through the preparation process is preferably a back contact solar cell.
  • This application further provides a photovoltaic system, including a solar cell module and auxiliary equipment.
  • the solar cell module includes the above-mentioned solar cell 10.

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Abstract

本申请公开了一种太阳电池及其制备方法和应用，制备方法包括S10提供具有第一表面以及与第一表面相对的第二表面的硅片衬底；S20在硅片衬底的第一表面上形成含硅薄膜；S30利用激光对含硅薄膜进行图案化处理，形成图案化区域；S40将具有含硅薄膜以及图案化区域的硅片衬底置于含有一元强碱的碱性溶液中制备预处理硅片衬底，将预处理硅片衬底置于含有一元强碱的制绒液中进行制绒处理，其中，碱性溶液中一元强碱的物质的量浓度大于制绒液中一元强碱的物质的量浓度。上述制备方法不仅有效去除由于激光处理时形成的额外膜层，在后续进行制绒处理中，可以同时实现有效制绒以及对图案化区域有效刻蚀，保证电池正面外观良好以及电池性能。

Description

太阳电池及其制备方法和应用
本申请要求于2022年04月29日提交中国专利局、申请号为202210468147.8、申请名称为“太阳电池及其制备方法和应用”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及电池领域，特别是涉及一种太阳电池及其制备方法和应用。
背景技术
背接触太阳电池由于其前表面无栅线电极的设计，对光没有任何遮挡，能够最大限度利用入射光，结合电池正面采用的金字塔绒面结构和减反射膜组成的陷光结构，使得电池的光学损失减小，有效提高了电池的短路电流密度。其中指状交叉背接触太阳电池(IBC)因其器件结构的特殊性(金属电极位于电池片背面，正负极呈指交叉状排列)，无需考虑正面的接触电阻，可以进一步优化前表面陷光和钝化性能；背部可以优化金属栅线电极，从而降低串联电阻，从而提高了填充因子。
在传统制备背接触太阳电池的过程中，制绒流程经常会在对电池衬底背面进行激光处理之后，进行激光处理时由于激光和背面掺杂区域作用后会产生一层较薄的氧化硅/硅/多晶硅的混合物，其不容易被制绒液在有效的制绒时间内腐蚀，即不能完成对衬底上激光处理区域进行有效刻蚀，产生刻蚀不下去的现象(如图1(a))，或仅局部刻蚀的现象(如图1(b))。因此制绒处理难以同时实现对电池正面制绒以及对电池背面进行刻蚀的效果。另外无论使用等离子体增强化学气相沉积(PECVD)还是低压化学气相沉积(LPCVD)等方式制备背面的含硅薄膜，都会在正面不可以避免地形成绕镀，特别是正面的四周边缘，即正面局部也会沉积部分的含硅薄膜，从而导致正面在制绒时反应速率不均，影响制绒的均匀性，带来电池产品正面外观不良(如图2所示(a)正常外观，(b)不良外观)以及性能有一定下降。
发明内容
基于此，为了同时实现去除激光处理时在衬底含硅薄膜处形成的多余膜层以及制绒前去除局部绕镀于第二表面的含硅薄膜从而保证后续良好的制绒效果，有必要提供一种太阳电池及其制备方法和应用。
本申请提供一种太阳电池的制备方法，包括以下步骤：
S10：提供硅片衬底，所述硅片衬底具有第一表面以及与所述第一表面相对的第二表面；
S20：在所述硅片衬底的第一表面上形成含硅薄膜，所述含硅薄膜包括在所述硅片衬底的第一表面上依次形成的氧化硅层、掺杂层以及掩膜层；
S30：利用激光对所述第一表面上的所述含硅薄膜进行图案化处理，形成图案化区域；
S40：将具有所述含硅薄膜以及所述图案化区域的所述硅片衬底置于含有一元强碱的碱性溶液中进行预处理，制备预处理硅片衬底，将所述预处理硅片衬底置于含有一元强碱的制绒液中进行制绒处理，其中，预处理过程使用的所述碱性溶液中一元强碱的物质的量浓度大于制绒处理中使用的所述制绒液中一元强碱的物质的量浓度。
在其中一个实施例中，所述一元强碱选自氢氧化钾和氢氧化钠中的至少一种。
在其中一个实施例中，在步骤S40中，所述碱性溶液中一元强碱的物质的量浓度0.3mol/L～2mol/L。
在其中一个实施例中，在步骤S40中，所述碱性溶液处理时间为10s～200s。
在其中一个实施例中，在步骤S40中，所述碱性溶液处理温度为60℃～80℃。
在其中一个实施例中，在步骤S20中，通过等离子体增强化学气相沉积、低压化学气相沉积、热氧或链氧的方法在所述第一表面上沉积所述氧化硅层，然后通过等离子体增强化学气相沉积或低压化学气相沉积的方法在所述氧化硅层上沉积所述掺杂层和所述掩膜层。
在其中一个实施例中，在步骤S30之后以及步骤S40之前，还包括利用物质的量浓度为4mol/L～6mol/L的氢氟酸处理绕镀于所述衬底第二表面的含硅薄膜的步骤。
在其中一个实施例中，在步骤S40中制绒处理包括：将所述预处理硅片衬底置于含有物质的量浓度为0.15mol/L～0.35mol/L的一元强碱的制绒液中进行制绒处理，制备具有绒面的硅片衬底。
在其中一个实施例中，在制备所述具有绒面的硅片衬底之后还包括步骤S50：在所述具 有绒面的硅片衬底的所述第一表面上依次形成第一钝化膜层以及第一减反射膜层。
在其中一个实施例中，在制备所述具有绒面的硅片衬底之后还包括步骤S50：在所述具有绒面的硅片衬底的所述第二表面上依次形成第二钝化膜层以及第二减反射膜层。
在其中一个实施例中，在步骤S50之后，还包括步骤S60：还包括步骤S60：利用激光对所述第一表面上的所述图案化区域进行图案化开孔，通过丝网印刷制备第一电极和第二电极。
进一步地，本申请还提供一种太阳电池，所述太阳电池按照上述的太阳电池的制备方法制得的。
本申请还更进一步地提供一种光伏系统，包括太阳电池组件以及辅助设备，所述太阳电池组件包括上述的太阳电池。
上述太阳电池的制备方法中，在对硅片衬底上形成含硅薄膜以及对硅片衬底进行激光处理后，将具有含硅薄膜以及图案化区域的硅片衬底置于含有一元强碱的碱性溶液中处理，然后再进行制绒处理，碱性溶液中一元强碱的物质的量浓度大于制绒液中一元强碱的物质的量浓度。经过上述碱性溶液处理不仅可以有效去除由于激光处理时形成的额外膜层，而且通过氢氟酸处理以及碱性溶液处理，可以去除由于绕镀正面生成的掩膜层、掺杂层以及氧化硅层，从而在后续进行制绒处理中，可以同时对衬底表面实现有效制绒以及对激光处理后形成的图案化区域有效刻蚀，保证电池正面外观良好以及电池性能。
附图说明
为了更清楚地说明本申请的技术方案，下面将对本申请中所使用的附图作简单介绍。显而易见地，下面所描述的附图仅仅是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据附图获得其他的附图。
图1为对太阳电池背面刻蚀效果(a)刻蚀不下去，(b)局部刻蚀；
图2为太阳电池外观(a)正常外观，(b)不良外观；
图3为本申请太阳电池制备流程图；
图4为对含硅薄膜进行图案化处理后图案化区域的仰视图；
图5为对图案化区域开孔后的仰视图；
图6为本申请太阳电池结构；
图7为本申请太阳电池的仰视图。
附图说明：10：太阳电池，110：衬底，111：图案化区域，120：复合膜层，121氧化硅层，122：掺杂层，123：掩膜层，124：含硅薄膜，130：第一钝化膜层，140：第二钝化膜层，150：第一减反射膜层，160：第二减反射膜层，170：第一电极，180：第二电极。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。
如图3所示，本申请提供一种太阳电池10的制备方法，包括以下步骤。
步骤S10：提供硅片衬底110，硅片衬底110具有第一表面以及与第一表面相对的第二表面。
进一步地，上述第一表面即为电池背光面也称背面，第二表面为电池受光面也称正面。
可以理解地，在步骤S10之前还包括对硅片衬底110进行去损伤处理，抛光处理和清洗处理。
进一步地，去损伤处理包括：使用含有物质的量浓度为0.6mol/L～0.8mol/L的一元强碱在50℃～70℃下进行处理。
具体地，去损伤处理的温度可以但不限于是50℃、55℃、60℃、65℃或70℃。
优选地，去损伤处理的溶液为质量百分数为46％的氢氧化钠溶液与水的体积比为4:96～6:94的混合溶液。
更进一步地，抛光处理包括：使用含有物质的量浓度为0.6mol/L～0.8mol/L的一元强碱 溶液在65℃～85℃下进行处理，使抛光后反射率20％～40％，具体地，上述抛光后反射率可以但不限于是20％、25％、30％、35％或40％，优选地，硅片衬底110抛光后的反射率为30％。
在一个具体示例中，清洗处理包括：依次使用氢氟酸和盐酸的混合溶液、去离子水清洗和烘干。
步骤S20：在硅片衬底110的第一表面上形成含硅薄膜124，含硅薄膜124包括在硅片衬底110上依次形成的氧化硅层121、掺杂层122以及掩膜层123。
在一个具体示例中，在步骤S20中，含硅薄膜124包括在硅片衬底110的第一表面上依次叠置的氧化硅层121、掺杂层122以及掩膜层123。氧化硅层121的厚度为0.5nm～3nm，掺杂层122的厚度为30nm～300nm，掩膜层123的厚度为10nm～100nm。
通过等离子体增强化学气相沉积、低压化学气相沉积、热氧或链氧的方法在第一表面上沉积氧化硅层121，然后通过等离子体增强化学气相沉积或低压化学气相沉积的方法在氧化硅层121上沉积掺杂层122和掩膜层123。
进一步地，氧化硅层121的形成方法为等离子体增强化学气相沉积、低压化学气相沉积、热氧或链氧。
优选地，氧化层利用低压化学气相沉积制备的温度为500℃～650℃。
更进一步地，掺杂层122与掩膜层123的形成方法同时为等离子体增强化学气相沉积或低压化学气相沉积。
可以理解地，掺杂层122与掩膜层123的形成方法同时为等离子体增强化学气相沉积，进一步地掺杂层122与掩膜层123的形成方法也可以同时为低压化学气相沉积。
进一步地，掺杂层122的形成方法为低压化学气相沉积的方法的一种方式为，在氧化硅层121上在500℃～650℃的温度下沉积掺杂层122的材料，在800℃～950℃使非晶硅转化为多晶硅，最后再在该炉管通入一定的氧气，再外侧生长掩膜层123的材料。
掺杂层122的形成方法为低压化学气相沉积的方法的另一种方式为，在500℃～650℃在氧化硅层121上沉积本征非晶硅，然后使用进行掺杂元素扩散，预沉积时通入的气体不仅有掺杂气源以及氧气，在上述温度中非晶硅转化为多晶硅。
进一步地，利用等离子体增强化学气相沉积(PECVD)在硅片衬底110上的第一表面通 过氧化形成氧化硅层121，再通入磷烷PH3和硅烷SiH4以沉积掺杂的非晶硅即掺杂层122，然后通入笑气N2O和硅烷SiH4在最外侧形成氧化硅作为掩膜层123，后续还需进行退火处理，退火处理的温度为800℃～950℃，退火处理时间为20min～50min。退火处理的目的是促进非晶硅向多晶硅转化，并促使晶粒生长，同时使氧化硅掩膜层123变得更加致密，以便后续在碱溶液处理中不被腐蚀。
掺杂层122与硅片衬底110的导电类型各自独立地选自N型或P型，掺杂层122与硅片衬底110的导电类型不同。
可以理解地，当衬底110为P型，则掺杂层122为N型，优选地掺杂物质为磷。具体地，掺杂层122材料可以但不限于是磷掺杂的多晶硅。
进一步地，掩膜层123的材料可以但不限于是氧化硅。
步骤S30：利用激光对第一表面上的含硅薄膜进行图案化处理，在硅片衬底110的第一表面上形成图案化区域111。
具体地，采用皮秒激光器利用紫外光355nm或者532nm的纳米激光，对硅片衬底110第一表面上部分区域的含硅薄膜124进行去除，形成宽度300μm～500μm的图案化区域111，去除或破坏图案化区域111处的部分含硅薄膜，使其更易被碱溶液腐蚀。如图4为对含硅薄膜124进行图案化处理后图案化区域111的仰视图。
步骤S40：将具有含硅薄膜124以及图案化区域111的硅片衬底110置于含有物质的量浓度为0.3mol/L～2mol/L的一元强碱的碱性溶液处理，制备预处理硅片衬底110，将预处理硅片衬底110进行制绒处理。
进行碱性溶液处理之前还包括利用物质的量浓度为4mol/L～6mol/L的氢氟酸溶液处理绕镀于衬底110的第二表面的掩膜层材料的步骤。
将衬底110的第一表面远离氢氟酸溶液，水平放置，用去离子水覆盖衬底110的第一表面，避免与氢氟酸溶液接触而破坏第一表面上的氧化硅掩膜层123。非激光区域即第一表面上除图形化区域111外的氧化硅掩膜层123在后续的碱液处理以及制绒液处理中仍可以保护非激光区域的掺杂层122。衬底110的第二表面与氢氟酸溶液接触去除绕镀产生的氧化硅掩膜层，清洗时间60s～240s。
可以理解地，上述氢氟酸溶液使用质量分数为49％的氢氟酸与水以(10～30):(70～90)的体积比进行混合，优选地，使用质量分数为49％的氢氟酸与水以20:80的比例进行混合制备氢氟酸溶液。
在一个具体示例中，一元强碱选自氢氧化钾和氢氧化钠中的至少一种。
在一个具体示例中，在步骤S40中，碱性溶液的处理时间为10s～200s。
可以理解地，处理时间可以但不限于是10s、30s、50s、70s、90s、110s、130s、150s、170s、190s或200s。
在一个具体示例中，碱性溶液的处理温度为60℃～80℃。
进一步地，处理温度可以但不限于是60℃、65℃、70℃、75℃或80℃。
上述太阳电池10的制备方法中，在对硅片衬底110上形成含硅薄膜124以及对硅片衬底110进行激光处理后，将具有含硅薄膜124以及图案化区域111的硅片衬底置于含有物质的量浓度为0.3mol/L～2mol/L的一元强碱的碱性溶液处理，然后进行制绒处理，经过上述碱性溶液处理不仅可以有效去除由于激光处理时形成的额外膜层而且可以去除绕镀于第二表面的含硅薄膜，从而在后续进行制绒处理中，可以同时对衬底110表面实现有效制绒以及对激光处理后形成的图案化区域有效刻蚀，保证电池正面外观良好以及电池性能。
此外，传统含硅薄膜124的制备方法如等离子体增强化学气相沉积法(PECVD)或是低压化学气相沉积(LPCVD)，均容易在硅片衬底110的正面形成绕镀，通过利用氢氟酸去除衬底110第二表面上较厚的氧化硅掩膜层123以及配合使用碱性溶液处理，二者协同可以实现对衬底110第二表面即受光面上形成的绕镀全部去除，有利于后续制绒，尤其是对于衬底110第二表面即受光面进行制绒。
在一个具体示例中，碱性溶液中还包括添加剂，添加剂可以但不限于是拓邦BP31。
进一步地，上述碱性溶液中质量分数为46％的氢氧化钠溶液、添加剂以及水的体积比为(15～25):(1～5):(400～480)。
优选地，上述碱性溶液中质量分数为46％的氢氧化钠溶液、添加剂以及水的体积比为20:(1～5):(400～480)。
为了保证背面掺杂层122不被腐蚀抛光，添加剂中含有的有机基团会吸附在掩膜层123 之上，形成隔断，防止掩膜层123和碱性溶液反应，同时添加剂中的催化剂会加速碱性溶液和硅的反应速度。将形成含硅薄膜124以及激光图案化处理后的硅片衬底110浸入至上述碱性溶液中，通过碱性溶液处理温度、碱性溶液处理时间以及碱性溶液浓度的配合不仅可以有效去除绕镀以及对衬底110背面激光处理区域产生多余膜层，还保护背面没有被激光处理的掺杂层122表面的掩膜层123，避免没有被激光处理区域的掺杂层122露出。
通过氢氟酸处理以及短时间的碱性溶液处理，可以去除由于绕镀正面生成的氧化硅掩膜层123、掺杂层122以及氧化硅层121，保证制绒前衬底110正面的状态均一以及后续制绒的均匀性。短时间碱性溶液处理还对背面激光区域有一定的预刻蚀作用，即去除由于激光处理时形成的额外物质膜层，在后续制绒的有效时间内实现正面制绒的同时还能对背面经预刻蚀后的可能残留的含硅薄膜124进行刻蚀并刻蚀到第一表面并继续刻蚀或者未有残留，直接刻蚀第一表面。经制绒液处理后激光处理区域的表面和相连的非激光区的表面形成一定的高度差(即相连的掺杂层122和衬底110的高度差)，大于1μm，从而保证激光处理区域的原掺杂层122被去除干净，避免制备的电池失效或者低效。
在一个具体示例中，将预处理硅片衬底110进行制绒处理：将具有含硅薄膜以及图案化区域111的硅片衬底110置于含有物质的量浓度为0.15mol/L～0.35mol/L的一元强碱的制绒液中进行制绒处理，制绒时间400s～600s，制备具有绒面的硅片衬底110。
可以理解地，制绒的目的是在衬底110的第二表面即受光面形成金字塔状的绒面。在衬底110的第二表面即受光面完成制绒时，图案化区域111会形成1～6μm的刻蚀深度，因为是使用的制绒碱液进行的刻蚀，所以第一表面的图案化区域111也为绒面。衬底110的第一表面上非图案化区域111由于有完整的完成氧化硅掩膜层123的保护，在上述步骤S40的碱性溶液以及制绒液中并不被腐蚀。
进一步地，上述制绒液还可以包括添加剂，其中添加剂可以但不限于是时创ST10。
在制绒后还包括对具有绒面的硅片衬底110进行可以但不限于是水洗、碱洗、水洗、酸洗、水洗以及烘干的步骤。
其中，碱洗为使用物质的量为0.1％～0.2％的氢氧化钠水溶液进行清洗。进一步地，酸洗使用含氢氟酸的酸溶液去除衬底110的第一表面上图案化区域111外的非图案化区域上最外 侧氧化硅掩膜层123。
在一个具体示例中，在制备具有绒面的硅片衬底110之后还包括以下步骤S50：在具有绒面的硅片衬底110的第一表面以及复合膜层120上依次形成第一钝化膜层130以及第一减反射膜层150。
可以理解地，在具有绒面的硅片衬底110的第一表面、氧化硅层121以及掺杂层122上依次形成第一钝化膜层130以及第一减反射膜层150。
进一步地，在具有绒面的硅片衬底110的第二表面上依次形成第二钝化膜140以及第二减反射膜层160。
可以理解地，上述第一钝化膜层130以及第二钝化膜层140的形成方法可以但不限于是原子层沉积法，进一步地，第一钝化膜层130材料以及第二钝化膜层140材料可以但不限于是氧化铝。
在一个具体示例中，第一钝化膜层130的厚度为2nm～25nm，第二钝化膜层140的厚度为2nm～25nm。
进一步地，上述第一减反射膜层150以及第二减反射膜层160的形成方法可以但不限于是等离子体增强化学气相沉积，进一步地，第一减反射膜层150材料以及第二减反射膜层160材料可以但不限于是氧化硅以及氮化硅中的至少一种。
进一步地，第一减反射膜层150的厚度为50nm～150nm，第二减反射膜层160的厚度为60nm～150nm。
可以理解地，第一减反射膜层150材料以及第二减反射膜层160材料含有氧化硅以及氮化硅材料，为两层材料叠置。
在一个具体示例中，还包括以下步骤S60：利用激光对第一表面上的图案化区域进行图案化开孔，通过丝网印刷制备第一电极170和第二电极180。
对第一表面上的图案化区域111以外的区域涂覆烧穿型电极浆料，去除涂覆烧穿型电极浆料处的第一钝化膜层130和第一减反射膜层150，并注入烧穿型电极浆料至烧穿型电极浆料与含硅薄膜124接触，制备第一电极170；
利用激光对第一表面上的图案化区域111进行图案化开孔，去除开孔处的第一钝化膜层 130和第一减反射膜层150形成第二电极接触区，在第二电极接触区内注入电极浆料，制备第二电极180。
利用激光对第一表面上的图案化区域111进行图案化开孔，开孔宽度30μm～50μm，去除开孔处的钝化膜层和减反射膜层形成第一电极170接触区。开孔区域呈虚线或者点状分布，如图5所示对图案化区域111开孔后的仰视图。
可以理解地，上述形成第一电极170以及第二电极180的方式可以但不限于是采用丝网印刷方式。与掺杂层122接触的第一电极170不需要开孔处理，第一电极优选使用烧穿型电极浆料，高温可烧透第一钝化膜层130、第一减反射膜层150与掺杂层122形成接触，而衬底110只是局部接触，使用的是非烧穿电极浆料，所以在激光开孔处非烧穿浆料与衬底110形成接触。
具体地，第一电极170和第二电极180为金属电极，第一电极170材料与第二电极180材料各自独立地选自可以但不限于铝和银中的一种。
进一步地，如图6所示本申请还提供一种太阳电池10，按照上述的太阳电池10的制备方法制得的。如图7为太阳电池10的仰视图。
经过制备流程得到的上述太阳电池10优选为背接触太阳电池。
本申请还更进一步地提供一种光伏系统，包括太阳电池组件以及辅助设备，太阳电池组件包括上述的太阳电池10。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (13)

  1. 一种太阳电池的制备方法，其特征在于，包括以下步骤：
    S10：提供硅片衬底，所述硅片衬底具有第一表面以及与所述第一表面相对的第二表面；
    S20：在所述硅片衬底的第一表面上形成含硅薄膜，所述含硅薄膜包括在所述硅片衬底的第一表面上依次形成的氧化硅层、掺杂层以及掩膜层；
    S30：利用激光对所述第一表面上的所述含硅薄膜进行图案化处理，形成图案化区域；
    S40：将具有所述含硅薄膜以及所述图案化区域的所述硅片衬底置于含有一元强碱的碱性溶液中进行预处理，制备预处理硅片衬底，将所述预处理硅片衬底置于含有一元强碱的制绒液中进行制绒处理，其中，预处理过程使用的所述碱性溶液中一元强碱的物质的量浓度大于制绒处理中使用的所述制绒液中一元强碱的物质的量浓度。
  2. 如权利要求1所述的太阳电池的制备方法，其特征在于，所述一元强碱选自氢氧化钾和氢氧化钠中的至少一种。
  3. 如权利要求1或2所述的太阳电池的制备方法，其特征在于，在步骤S40中，所述碱性溶液中一元强碱的物质的量浓度为0.3mol/L～2mol/L。
  4. 如权利要求1至3中任一项所述的太阳电池的制备方法，其特征在于，在步骤S40中，所述碱性溶液处理时间为10s～200s。
  5. 如权利要求1至4中任一项所述的太阳电池的制备方法，其特征在于，在步骤S40中，所述碱性溶液处理温度为60℃～80℃。
  6. 如权利要求1至5中任一项所述的太阳电池的制备方法，其特征在于，在步骤S20中，通过等离子体增强化学气相沉积、低压化学气相沉积、热氧或链氧的方法在所述第一表面上沉积所述氧化硅层，然后通过等离子体增强化学气相沉积或低压化学气相沉积的方法在所述氧化硅层上沉积所述掺杂层和所述掩膜层。
  7. 如权利要求1至6中任一项所述的太阳电池的制备方法，其特征在于，在 步骤S30之后以及步骤S40之前，还包括利用物质的量浓度为4mol/L～6mol/L的氢氟酸处理绕镀于所述衬底第二表面的含硅薄膜的步骤。
  8. 如权利要求1至7中任一项所述的太阳电池的制备方法，其特征在于，在步骤S40中制绒处理包括：将所述预处理硅片衬底置于含有物质的量浓度为0.15mol/L～0.35mol/L的一元强碱的制绒液中进行制绒处理，制备具有绒面的硅片衬底。
  9. 如权利要求8所述的太阳电池的制备方法，其特征在于，在制备所述具有绒面的硅片衬底之后还包括步骤S50：在所述具有绒面的硅片衬底的所述第一表面上依次形成第一钝化膜层以及第一减反射膜层。
  10. 如权利要求8或9所述的太阳电池的制备方法，其特征在于，在制备所述具有绒面的硅片衬底之后还包括步骤S50：在所述具有绒面的硅片衬底的所述第二表面上依次形成第二钝化膜层以及第二减反射膜层。
  11. 如权利要求9或10所述的太阳电池的制备方法，其特征在于，在步骤S50之后，还包括步骤S60：利用激光对所述第一表面上的所述图案化区域进行图案化开孔，通过丝网印刷制备第一电极和第二电极。
  12. 一种太阳电池，其特征在于，所述太阳电池按照权利要求1至11中任一项所述的太阳电池的制备方法制得的。
  13. 一种光伏系统，其特征在于，包括太阳电池组件以及辅助设备，所述太阳电池组件包括如权利要求12所述的太阳电池。
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