WO2023188165A1

WO2023188165A1 - Probe card

Info

Publication number: WO2023188165A1
Application number: PCT/JP2022/016175
Authority: WO
Inventors: 親臣森; 守上田
Original assignee: 日本電子材料株式会社
Priority date: 2022-03-30
Filing date: 2022-03-30
Publication date: 2023-10-05

Abstract

A probe card (100) comprises a probe pin (20), and guides (11, 12) having guide holes (11H, 12H) through which the probe pin (20) is inserted and that guide the probe pin (20), and inspects the electrical characteristics of an electronic circuit, wherein the probe pin (20) comprises a probe through-hole (20H) that passes through the probe pin (20) perpendicular to the longitudinal direction of the probe pin (20).

Description

probe card

This application relates to a probe card.

A probe card is a testing device used to test the electrical characteristics of electronic circuits formed on semiconductor wafers. This probe card is equipped with a large number of probe pins that respectively contact electrodes on the electronic circuit. Characteristics testing of electronic circuits is performed by bringing a semiconductor wafer close to a probe card, bringing the tips of probe pins into contact with electrodes on the electronic circuit, and establishing electrical continuity between the tester device and the electronic circuit via the probe pins.

At this time, a large current exceeding the allowable current may flow through the power supply probe pin. In addition, signal probe pins have been miniaturized as the density of probe pins has increased, and the cross-sectional area of the probe pins has been set to be small. For this reason, there is a problem that the withstand current performance is reduced and the probe pin may melt if a current exceeding the rated value flows through the probe pin. In order to solve this problem, a technique has been proposed in which a cooling medium is caused to flow through a support that supports the probe pin to cool it (see, for example, Patent Document 1).

JP2013-088257A

Patent Document 1 proposes cooling the support of the probe pin in order to solve the technical problem caused by the heat generated by the probe pin, but in reality, this is not practical because the configuration of the cooling medium flow path is complicated. It wasn't on point. Therefore, when a probe pin is fused, it is necessary to remove the fused probe pin and replace it with a repair probe pin.

The probe pin has two guide plates with holes between its ends, that is, the contact part that contacts the electrode of the test object and the connection part that connects to the electrode of the wiring board of the probe card. There are things that are supported. In this case, when the probe pin is fused between the two guide plates and a metal lump is generated at the fused end, the metal lump becomes larger than the guide hole and becomes an obstacle, causing the probe pin to pass through the guide hole. There was a problem that it became impossible to remove the .
The present application discloses a technology for solving the above-mentioned problems, and aims to provide a probe pin and a probe card that can be easily replaced even if the probe pin should melt. It is something.

The probe card disclosed in this application includes:
A probe card for testing the electrical characteristics of an electronic circuit, comprising a probe pin and a guide having a guide hole into which the probe pin is inserted and guided,
The probe pin is provided with a probe through hole that penetrates perpendicularly to the longitudinal direction of the probe pin.

According to the probe card disclosed in the present application, even if the probe pin should melt, it can be easily replaced.

FIG. 3 is a diagram schematically showing a test state of an electronic circuit using the probe card according to the first embodiment. FIG. 3 is an enlarged side view of the probe pin according to the first embodiment. FIG. 3 is a diagram showing a state of a probe card in which one probe pin is fused according to the first embodiment. FIG. 3 is an enlarged side view of the fused probe pin according to the first embodiment. FIG. 3 is a diagram showing a schematic configuration of a probe card using probe pins as a comparative example. FIG. 7 is a diagram showing a state of a probe card of a comparative example in which one probe pin is fused. FIG. 7 is a diagram schematically showing a test state of an electronic circuit using a probe card according to a second embodiment. FIG. 3 is an enlarged side view of a probe pin according to Embodiment 2; FIG. 7 is a diagram showing a state of a probe card in which one probe pin is fused according to Embodiment 2; FIG. 7 is an enlarged side view of a fused probe pin according to Embodiment 2; FIG. 7 is a diagram schematically showing a state of testing an electronic circuit using a probe card according to a third embodiment. FIG. 12A is a side view of the probe pin before fusing according to the fourth embodiment. FIG. 12B is a side view of the probe pin after fusing according to the fourth embodiment.

Embodiment 1.
The probe card according to Embodiment 1 will be described below with reference to the drawings. Note that, in this specification, the upper side of the page in FIG. 1 is referred to as "top", and the lower side of the page is referred to as "bottom". That is, when viewed from the probe card, the side to be inspected is "down".
FIG. 1 is a diagram schematically showing a test state of an electronic circuit using a probe card 100 according to the first embodiment.

The probe card 100 is an inspection device used to inspect the electrical characteristics of an electronic circuit formed on a semiconductor wafer W. The probe card 100 includes a large number of probe pins 20 that are brought into contact with electrodes C on the electronic circuit, respectively. To test the characteristics of an electronic circuit, the semiconductor wafer W is brought close to the probe card 100, the lower end of the probe pin 20 is brought into contact with the electrode C on the electronic circuit, and a tester device (not shown) is connected to the semiconductor wafer W via the probe pin 20. This is done by making the tester connection electrode TC conductive.

The probe card 100 includes a hollow frame 10, an upper guide 11 attached to the upper end of the frame 10, a lower guide 12 attached to the lower end of the frame 10, a fixing plate 13 for fixing the upper guide 11, and a wiring board 14. Equipped with

The upper guide 11 has a plurality of guide holes 11H penetrating in the vertical direction, and the lower guide 12 provided below the upper guide 11 also has a plurality of guide holes 12H penetrating in the vertical direction. Above the group of guide holes 11H provided in the upper guide 11 is an opening 13H provided in the fixed plate 13. A wiring board 14 is arranged on the upper surface of the fixed plate 13. The wiring board 14 includes a plurality of probe connection pads 14P on its lower surface that contact the upper ends of the probe pins 20.

Then, the plurality of probe pins 20 are inserted and guided through the

guide holes

12H and 11H, respectively. The probe pin 20 is a vertical probe pin arranged perpendicularly to the object to be inspected.

FIG. 2 is an enlarged side view of the probe pin 20.
As shown in FIG. 2, the probe pin 20 is made of conductive metal, and a cross section perpendicular to the longitudinal direction is rectangular except for a portion, and has an elongated shape. The central portion is curved, and the upper and lower portions extend vertically in a straight line. The curved central portion is the elastic deformation portion 20m. The upper end (one end) of the probe pin 20 is provided with a terminal portion 20t that is pointed upward. A contact portion 20c is formed at the lower end (other end).

The contact portion 20c is a contact portion that is brought into contact with the object to be inspected. Further, the terminal portion 20t is provided at the upper end portion of the probe pin 20, and is pressed against the probe connection pad 14P of the wiring board 14 during inspection. The elastically deformable portion 20m is a portion that easily undergoes buckling deformation when compressive force is applied in the longitudinal direction during so-called overdrive. During overdrive, the elastic deformation portion 20m buckles and deforms in response to the reaction force from the object to be inspected, and the contact portion 20c retreats toward the terminal portion 20t.

The probe pin 20 has a part located between the upper guide 11 and the lower guide 12 and near the upper guide 11 at the time of inspection, perpendicular to the buckling direction Z of the probe pin 20 (with respect to the longitudinal direction). A probe through hole 20H having a rectangular cross section is provided which penetrates in the vertical direction. Both sides of the probe through hole 20H in the buckling direction Z are vertically connected by a thin wall portion 20f. Therefore, the probe pin 20 is divided into two parts only at the probe through hole 20H, and is made into one piece at the other parts. The cross-sectional area of the cross section perpendicular to the longitudinal direction of the probe pin 20 is the smallest at the portion where the probe through hole 20H is present, except for the vicinity of the terminal portion 20t.

The probe pin 20 is manufactured using so-called MEMS (Micro Electro Mechanical Systems) technology. MEMS technology is a technology for creating fine three-dimensional structures using photolithography technology and sacrificial layer etching technology. Photolithography technology is a fine pattern processing technology using photoresist used in semiconductor manufacturing processes. In addition, sacrificial layer etching technology creates a three-dimensional structure by forming a lower layer called a sacrificial layer, forming the layers that make up the structure on top of it, and then removing only the sacrificial layer by etching. It's technology.

Well-known plating techniques can be used to form each layer including the sacrificial layer. For example, metal ions in the electrolyte can be attached to the substrate surface by immersing a substrate as a cathode and a metal piece as an anode in an electrolyte and applying a voltage between the two electrodes. Such a process is called an electroplating process, and since it is a wet process in which the substrate is immersed in an electrolytic solution, a drying process is performed after the plating process. Further, after this drying process, a flattening process for flattening the laminated surface by polishing process or the like is performed as necessary.

FIG. 3 is a diagram showing a state of the probe card 100 in which one probe pin 20 is fused.
FIG. 4 is an enlarged side view of the fused probe pin 20.
A large current exceeding the allowable current may flow through the power supply probe pin. In addition, a current exceeding the rated value may flow to the signal probe pin and cause it to melt. As described above, the cross-sectional area of the portion of the probe pin 20 where the probe through-hole 20H is present in the cross section perpendicular to the longitudinal direction is smaller than the cross-sectional area of the other portion of the cross section perpendicular to the longitudinal direction. Therefore, if an overcurrent were to flow through the probe pin 20, the probe pin 20 would definitely melt in the portion where the probe through hole 20H, which has a higher electrical resistance than other portions, is present.

FIG. 5 is a diagram showing a schematic configuration of a probe card 100B using probe pins 20B as a comparative example.
FIG. 6 is a diagram showing a state of a comparative example probe card 100B in which one probe pin 20B is fused.
In the case of the comparative example shown in FIG. 5, the cross-sectional area of the probe pin 20B perpendicular to the longitudinal direction is approximately the same over the entire length, except for the terminal portion 20Bt.

If such an overcurrent flows through the probe pin 20B, it is not known where the probe pin 20B will melt. As shown in FIG. 6, when the probe pin 20B is fused between the upper guide 11 and the lower guide 12, metal grains YB1 and YB2 are formed on both sides of the fused portion. If the size of the metal grains YB1 and YB2 becomes larger than the guide holes 11H and 12H, the metal grains YB1 and YB2 will get in the way, making it impossible to pull out the probe pin 20B, which has been fused into two pieces, from within the frame 10. .

On the other hand, in the case of the probe pin 20 according to the present embodiment, as shown in FIGS. 3 and 4, the probe pin 20 is always fused at the portion where the probe through hole 20H is provided. Even in this case, metal grains Y1 and Y2 are generated in the fused portion. However, even if the metal particles Y1 and Y2 are generated, their size is much smaller than the metal particles YB1 and TB2 generated in one probe pin 20B, and smaller than the guide holes 11H and 12H. Furthermore, since the metal particles Y1 and Y2 adhere to the thin wall portion 20f of the probe through hole 20H, there are no obstacles next to the metal particles Y1 and Y2. Therefore, even if the width of the fused portion of the probe pin 20 is slightly larger than the original width of the probe pin 20, when the fused probe pin 20 is pulled out from above and below, the roots of the metal grains Y1 and Y2 will be deformed. Therefore, the probe pin 20 can be removed outside the frame 10.

Note that in the first embodiment, the probe through hole 20H is provided perpendicularly to the buckling direction Z, but it may be provided in a direction parallel to the buckling direction Z. That is, it only needs to be perpendicular to the longitudinal direction of the probe pin 20.

According to the probe pin 20 and the probe card 100 according to the first embodiment, even if the probe pin 20 should be fused due to overcurrent, it can be easily pulled out of the frame 10. Thereby, the time and cost for repairing the probe card 100 can be reduced.

Embodiment 2.
The probe card according to the second embodiment will be described below, focusing on the differences from the first embodiment.
FIG. 7 is a diagram schematically showing a test state of an electronic circuit using the probe card 200 according to the second embodiment.
FIG. 8 is an enlarged side view of the probe pin 220.
FIG. 9 is a diagram showing a state of the probe card 200 in which one probe pin 220 is fused.
FIG. 10 is an enlarged side view of the fused probe pin 220.

The portion of the probe pin 220 that fits within the guide hole 11H of the upper guide 11 is the upper guide internal storage portion 220g. The upper guide housing portion 220g is provided with a probe through hole 220H having a rectangular cross section and penetrating in a direction perpendicular to the buckling direction Z of the probe pin 20.

As shown in FIG. 8, a locking portion 20k protrudes perpendicularly to the longitudinal direction of the probe pin 220 on the outer circumferential surface of the probe pin 220 above the upper guide housing portion 220g. Therefore, the locking portion 20k of the probe pin 220 is caught on the upper surface of the upper guide 11 and does not fall off downward. Thereby, the upper guide housing portion 220g of the probe pin 220 is always positioned within the guide hole 11H of the upper guide 11.

As described in the first embodiment, the cross-sectional area of the section perpendicular to the longitudinal direction of the upper guide housing portion 220g, which is the portion where the probe through hole 220H is present, is perpendicular to the longitudinal direction of the other portions. smaller than the cross-sectional area of the cross-section. Therefore, in the event that an overcurrent flows through the probe pin 220, the probe pin 20 will definitely be fused in the upper guide housing portion 220g, which has a higher electrical resistance than other portions.

Further, as shown in FIG. 9, the probe pin 20 is always fused in the guide hole 11H of the upper guide 11 at the portion of the upper guide housing portion 220g. In this case, metal grains Y1 and Y2 are generated at the fused portion. However, since the location where this occurs is inside the guide hole 11H, the probe pin 20 fused by the metal particles Y1 and Y2 will not become stuck in the frame 10.

Furthermore, in the case of the comparative example described in Embodiment 1, if the metal grains YB1 and YB2 of the fused probe pin 20B come into contact with the adjacent probe pins 20B and join together, it is even more difficult to remove them. However, since the probe pin 220 according to the second embodiment is always fused within the guide hole 11H of the upper guide 11, the metal particles Y1 and Y2 generated at the fused portion may be damaged by the adjacent probe. This can prevent contact with the pins 220 and damage to them as well. Thereby, when the probe pin 220 is blown out, the probe card 100 can be restored more easily and at a lower cost.

Embodiment 3.
The probe card according to the third embodiment will be described below, focusing on the differences from the first and second embodiments.
FIG. 11 is a diagram schematically showing a test state of an electronic circuit using the probe card 300 according to the third embodiment.

A portion of the probe pin 320 that fits within the guide hole 12H of the lower guide 12 is the lower guide storage portion 20i. The lower guide housing portion 20i is provided with a probe through hole 320H having a rectangular cross section and penetrating in a direction perpendicular to the buckling direction Z of the probe pin 320.

When an overcurrent flows through the probe pin 320 of this embodiment, the probe pin 320 is always inserted into the guide hole 12H of the lower guide 12 in the lower guide storage section 20i, as in the second embodiment. It melts in some parts. Therefore, the same effects as in the second embodiment are achieved.

Embodiment 4.
The probe card according to the fourth embodiment will be described below, focusing on the differences from the second embodiment.
FIG. 12A is a side view of the probe pin 420 before being fused.
FIG. 12B is a side view of the probe pin 420 after being fused.
Similar to the probe pin 420 of the second embodiment, the upper guide housing portion 420g of the probe pin 420 has a probe through hole 420H having a rectangular cross section that penetrates in a direction perpendicular to the buckling direction Z of the probe pin 420. It is provided.

The probe through hole 420H is provided with a protrusion T made of an insulating material that protrudes upward in the longitudinal direction of the probe pin 420, that is, toward the wiring board 14 side. The protrusion T protrudes upward from the lower surface 420HL of the probe through hole 420H, and the tip of the protrusion T does not reach the upper surface 420HU of the probe through hole 420H. Note that the protrusion T may be formed simultaneously with the main body of the probe pin 420 using MEMS technology, and its surface may be coated with Diamond Like Carbon.

Here, it is assumed that an overcurrent flows into the upper guide housing portion 420g of the probe pin 420, and that portion becomes high temperature and melts. At this time, the probe pin 420 that is testing the electronic circuit of the semiconductor wafer W is in a so-called overdrive state, and the contact portion 20c at the lower tip is pressed against the electrode C on the electronic circuit of the semiconductor wafer W, and the probe pin 420 is in an overdrive state. 420 is buckled in the buckling direction Z due to the reaction force. If the protrusion T does not exist and melting occurs in the upper guide housing portion 420g, there is a possibility that the above-mentioned reaction force will cause a chain reaction of melting before the probe pin 420 is melted. In this case, there is a concern that the melted portion may expand in the vertical direction beyond the range of the upper guide internal storage section 420g.

On the other hand, as in the fourth embodiment, by providing the protrusion T made of an insulating material in the probe through hole 420H, even if the upper guide housing portion 420g melts, the probe that receives the reaction force As shown in FIG. 12B, the protrusion T of the pin 420 abuts against the lower surface 420HL of the probe through hole 420H, so that only the portion of the upper guide housing portion 420g is reliably fused, and the melting of the probe pin 420 does not chain. Therefore, the probe pin 420 that has blown out can be easily removed and replaced.

Furthermore, since the melted portion does not expand in the longitudinal direction beyond the range of the storage section 420g in the upper guide, metal particles generated during melt cutting will not be generated between the upper guide 11 and the lower guide 12. Further, since the melted portion does not come into contact with other adjacent probe pins 420 and expand the generic name of the probe pins 420, the probe card can be easily restored.

Note that in the fourth embodiment, the protrusion T is configured to protrude upward from the lower surface 420HL of the probe through hole 420H, but the same effect can be achieved even if the protrusion T is configured to protrude downward from the upper surface 420HU.

Although this application describes various exemplary embodiments and examples, various features, aspects, and functions described in one or more embodiments may be applicable to a particular embodiment. The present invention is not limited to, and can be applied to the embodiments alone or in various combinations.
Therefore, countless variations not illustrated are envisioned within the scope of the technology disclosed herein. For example, this includes cases where at least one component is modified, added, or omitted, and cases where at least one component is extracted and combined with components of other embodiments.

100, 100B, 200, 300 probe card, 10 frame, 11 upper guide, 11H, 12H guide hole, 12 lower guide, 13 fixing plate, 13H opening, 14 wiring board, 20, 20B, 220, 320, 420 probe pin , 20c contact part, 420HU top surface, 420HL bottom surface, 20m elastic deformation part, 20t, 20Bt terminal part, 220g, 420g upper guide storage part, 20i lower guide storage part, 20k locking part, 20H, 220H, 320H, 420H Probe through hole, C electrode, T protrusion, TC tester connection electrode, W semiconductor wafer, Y1, Y2, YB1, YB2 metal grain, Z buckling direction.

Claims

A probe card for testing the electrical characteristics of an electronic circuit, comprising a probe pin and a guide having a guide hole into which the probe pin is inserted and guided,
The probe card includes a probe through hole in which the probe pin extends perpendicularly to a longitudinal direction of the probe pin.
2. The probe card according to claim 1, wherein the probe through hole is provided in a guide housing portion of the probe pin that is present in the guide hole of the guide during inspection.
3. The probe card according to claim 2, further comprising an electrically insulating protrusion that protrudes from one surface above and below the other surface of the probe through hole.