WO2023179627A9 - 用于同时拉制多根晶体的晶体冷却装置及人工晶体制备设备 - Google Patents

用于同时拉制多根晶体的晶体冷却装置及人工晶体制备设备 Download PDF

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Publication number
WO2023179627A9
WO2023179627A9 PCT/CN2023/082901 CN2023082901W WO2023179627A9 WO 2023179627 A9 WO2023179627 A9 WO 2023179627A9 CN 2023082901 W CN2023082901 W CN 2023082901W WO 2023179627 A9 WO2023179627 A9 WO 2023179627A9
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WIPO (PCT)
Prior art keywords
crystal
cooling
hole
flange
plate
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Application number
PCT/CN2023/082901
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English (en)
French (fr)
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WO2023179627A1 (zh
Inventor
郭李梁
朱振业
Original Assignee
洛阳长缨新能源科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from CN202210278020.XA external-priority patent/CN114686966A/zh
Priority claimed from CN202211182774.1A external-priority patent/CN115418708A/zh
Priority claimed from CN202211182775.6A external-priority patent/CN115418709A/zh
Application filed by 洛阳长缨新能源科技有限公司 filed Critical 洛阳长缨新能源科技有限公司
Priority to CN202380009894.8A priority Critical patent/CN117098878A/zh
Publication of WO2023179627A1 publication Critical patent/WO2023179627A1/zh
Publication of WO2023179627A9 publication Critical patent/WO2023179627A9/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Definitions

  • the present application relates to the technical field of artificial crystal preparation, and in particular to a crystal cooling device for simultaneously pulling a plurality of crystals and artificial crystal preparation equipment including the crystal cooling device.
  • the amount of silicon core used in the entire production process of multi-crystalline/single-crystalline silicon is very large.
  • Most of the existing silicon cores are prepared by zone melting (mainly through high-frequency coils and seed crystal chucks to complete the pulling process).
  • Some companies also recycle the above-mentioned fragments, pull them into silicon rods through a vertical pulling furnace, and then cut the silicon rods into multiple columnar silicon rods with a size of 8mm*8mm or 10mm*10mm through a multi-wire cutting machine. This not only increases the production cost of the columnar silicon rods, but also may introduce more impurities during the cutting process, which reduces the product quality and causes a large waste of resources. So how to reuse the broken silicon materials has become one of the long-term technical demands of technicians in this field.
  • the technology of pulling silicon rods by the Czochralski method is very mature and has been widely used in the field of artificial crystal preparation.
  • only one silicon rod can be pulled in the center of the crucible, such as the technology disclosed in the Chinese utility model with patent number 201320678696.4, application date October 30, 2013, announcement number CN203639604U, and patent name A kind of soft shaft pulling type single crystal furnace; and the technology disclosed in the Chinese invention patent with patent number 202011063763.2, application date September 30, 2020, announcement number CN112176400A, and patent name A kind of Czochralski single crystal furnace and its melt temperature gradient control method.
  • the technical solutions disclosed in the above two patents are both technical solutions for pulling silicon rods by the Czochralski method, but the above two technical solutions can only realize the simultaneous pulling of one silicon rod, and cannot realize the simultaneous pulling of multiple silicon rods.
  • the inventor discovered through searching that the patent number is 200910064106.7, the application date is January 20, 2009, and the patent name is a Chinese invention patent for a crystal scrap to pull a silicon core and a device for implementing the method.
  • the patent provides a device and method for pulling a silicon core using crystal scraps.
  • the patent can use scrap silicon to pull a silicon core, the drawn silicon core has a slow cooling speed, which leads to a slightly larger ellipticity of the silicon core and low pulling efficiency. Therefore, how to provide a crystal cooling device for an artificial crystal furnace with a faster cooling speed has become one of the long-term technical demands of those skilled in the art.
  • the present application provides a crystal cooling device for simultaneously pulling multiple crystals, which can cool the pulled crystals faster and can simultaneously pull multiple crystals, thereby increasing the silicon core pulling speed. Moreover, the crystal cooling device according to the present application can simultaneously pull multiple silicon cores using broken silicon materials, effectively avoiding the waste of broken silicon materials.
  • a crystal cooling device for simultaneously pulling a plurality of crystals.
  • the crystal cooling device is provided with a plurality of first pulling holes for the pulled crystals to pass through and a cooling medium channel for cooling the crystals.
  • the crystal cooling device includes an upper flange and a lower flange and a crystal cooling tube arranged between the upper flange and the lower flange, one end of the crystal cooling tube is connected to the upper flange, and the other end of the crystal cooling tube is connected to the lower flange, the crystal cooling tube forms the first pulling hole, and the cooling medium channel is arranged on the periphery of the crystal cooling tube.
  • a water outlet and a water inlet for entering and exiting a cooling medium for cooling the crystal are provided on the upper flange or the lower flange.
  • the upper flange is provided with a crystal through hole penetrating the upper flange, and the crystal through hole is provided corresponding to the first pulling hole.
  • the lower surface of the upper flange is provided with an upwardly concave groove, or the upper surface of the upper flange is provided with a downwardly concave groove, and a lower cover plate is provided at the open end of the groove, and the lower cover plate and the groove form a water inlet cavity, and a crystal through-hole penetrating the upper flange is provided at the bottom of the groove, and the crystal through-hole is arranged corresponding to the first pulling hole, and a plurality of through-holes are provided on the lower cover plate.
  • an upper groove and a lower groove are respectively provided on the upper and lower surfaces of the upper flange, and a water inlet chamber cover plate and a water return chamber cover plate are respectively provided at the open ends of the upper groove and the lower groove, the water inlet chamber cover plate and the upper groove form a water inlet chamber, and the water return chamber cover plate and the lower groove form a water return chamber, and the water inlet and the crystal through-holes, the water outlet and the water inlet which pass through the bottom of the lower groove are respectively provided on the water inlet chamber cover plate, the crystal through-holes are arranged corresponding to the first pulling hole, and the water inlet hole which passes through the bottom of the lower groove is provided at the bottom of the upper groove, the water inlet chamber is connected with the water inlet, and the water return chamber is connected with the water outlet, and a plurality of through-holes are provided on the water return chamber cover plate.
  • the upper flange includes an upper disc, a middle disc and a lower disc, and the upper disc, the middle disc and the lower disc are stacked to form a flange body, a middle hole penetrating the flange body is provided at the central part of the upper surface of the flange body, a hollow return water chamber is provided at the upper part of the flange body, a hollow water inlet chamber is provided at the lower part of the flange body, a connecting pipe penetrating to the water inlet chamber is provided on the upper surface of the flange body, the connecting pipe forms a water inlet, a water outlet penetrating to the return water chamber is provided on the upper surface of the flange body, a return water transition pipe penetrating to the return water chamber is provided on the lower surface of the flange body, and a crystal through-hole penetrating the flange body is provided on the upper surface of the flange body outside the middle hole, and the crystal through-hole is provided corresponding to the first pulling
  • a transition ring is provided on the lower surface of the flange body, a middle hole is provided in the middle of the transition ring, and a crystal through hole, a water outlet opening and a water return opening are respectively provided on the upper surface of the transition ring.
  • the lower flange is provided with a crystal lower through hole penetrating the lower flange, and the crystal lower through hole is provided corresponding to the first pulling hole.
  • a downwardly recessed groove is provided on the top of the lower flange, and an upper cover plate is provided at the open end of the groove.
  • the groove and the upper cover plate form a water collecting chamber, and a crystal lower through hole is provided at the bottom of the groove, which passes through to the bottom of the lower flange.
  • the crystal lower through hole is arranged corresponding to the first pulling hole, and a plurality of through holes are provided on the upper cover plate.
  • a cooling plate is provided below the lower flange, a cavity is provided in the cooling plate, and the cooling plate is provided with crystal pulling holes corresponding to the lower through holes of the crystal, and water outlet holes and water inlet holes respectively connected to the cavity.
  • a connecting tube is arranged between the upper flange and the lower flange, and the crystal cooling tube is arranged in the connecting tube.
  • One end of the crystal cooling tube is connected to the upper through hole of the crystal arranged on the upper flange, and the other end of the crystal cooling tube is connected to the lower through hole of the crystal arranged on the lower flange.
  • the cavity between the inner edge surface of the connecting tube and the lower end surface of the upper flange and the upper end surface of the lower flange forms the cooling medium channel.
  • a sleeve is sleeved on the periphery of the crystal cooling tube, one end of the sleeve is connected to a water inlet cavity arranged in the upper flange, and the other end of the sleeve is connected to a water collecting cavity arranged in the lower flange, and the cooling cavity between the inner edge surface of the sleeve and the outer edge surface of the crystal cooling tube, the water inlet cavity and the water collecting cavity form the cooling medium channel.
  • a semicircular step recessed downward is provided at the upper end of the outer sleeve of the crystal cooling tube, the upper end of the sleeve is connected to a water inlet chamber arranged on the upper flange, the upper end of the semicircular step is connected to a water return chamber arranged at the lower part of the upper flange, the lower end of the sleeve is connected to a water collecting chamber arranged at the upper part of the lower flange or is connected to the lower flange, and the cooling chamber between the inner edge surface of the sleeve and the outer edge surface of the crystal cooling tube, the water inlet chamber, the water return chamber and the water collecting chamber form the cooling medium channel.
  • a partition is provided in the cooling cavity between the crystal cooling tube and the sleeve.
  • the crystal cooling device is provided with a plurality of the crystal cooling tubes, one crystal cooling tube is arranged in the middle of the crystal cooling device, and a plurality of groups of crystal cooling tubes are radially arranged around the periphery of the middle crystal cooling tube, and each group of crystal cooling tubes includes at least two crystal cooling tubes; or a middle hole is arranged in the middle of the crystal cooling device, and a plurality of groups of crystal cooling tubes are radially arranged around the periphery of the middle hole, and each group of crystal cooling tubes includes at least two crystal cooling tubes.
  • a connecting tube and an inner connecting tube are respectively arranged between the flange body and the lower flange, the crystal cooling tube is arranged in the cavity between the connecting tube and the inner connecting tube, the upper end of the crystal cooling tube is connected to the crystal through hole arranged on the flange body, and the lower end of the crystal cooling tube is connected to the crystal lower through hole arranged on the lower flange, and the cavity between the inner edge surface of the connecting tube and the lower end surface of the upper flange, the upper end surface of the lower flange, and the outer edge surface of the inner connecting tube forms the cooling medium channel.
  • a water outlet and a water inlet for a cooling medium for cooling the crystal are provided on the connecting tube.
  • a cooling plate is arranged below the lower flange, a cavity is arranged in the cooling plate, and the cooling plate is provided with a crystal pulling hole arranged corresponding to the lower through hole of the crystal, and a water outlet hole and a water inlet hole respectively connected to the cavity, the water inlet hole is connected to the lower end of the water inlet pipe, the upper end of the water inlet pipe passes through the lower flange to be connected to the water outlet below the flange disk body, the water outlet hole is connected to the lower end of the water outlet pipe, and the upper end of the water outlet pipe passes through the lower flange to be connected to the cooling medium channel on the flange disk body.
  • the crystal cooling device further comprises a heat preservation plate arranged below the lower flange, the heat preservation plate is provided with at least one second lifting hole, and the second lifting hole is arranged to correspond one-to-one with the crystal lower through hole on the lower flange.
  • the crystal cooling device further comprises a heat preservation plate arranged below the cooling plate, the heat preservation plate is provided with at least one second pulling hole, and the second pulling hole is arranged to correspond one-to-one with the crystal pulling hole on the cooling plate.
  • a central hole is provided in the middle of the thermal insulation board, and the second pulling holes are radially arranged around the central hole.
  • the outer dimensions of the thermal insulation plate are greater than or equal to the outer dimensions of the lower flange or the cooling plate.
  • an upwardly protruding step is provided on the upper surface of the heat preservation plate from the outside to the inside, and the step corresponds to and cooperates with the step surface of the lower flange or the lower surface of the cooling plate.
  • the heat preservation plate is arranged to have a downwardly sunken groove in the middle to form a barrel-shaped structure, and the inner edge surface of the groove and the outer edge surface of the lower flange or the cooling plate are clearance fit or interference fit.
  • a thermal insulation filler is provided at the clearance.
  • an upper through hole is provided in the middle of the upper surface of the cooling plate, a cavity is provided inside the cooling plate, and a plurality of the crystal pulling holes are radially provided around the upper through hole.
  • the lower surface of the lower flange or the cooling plate is provided with a stepped surface formed by upwardly concave steps from the outside to the inside, and a circle of the crystal pulling holes is respectively provided on each step surface.
  • an artificial lens preparation device comprising the above-mentioned crystal cooling device.
  • the present application by providing a plurality of crystal cooling tubes between the upper flange and the lower flange, and providing a cooling medium channel on the periphery of the crystal cooling tube, it is possible to utilize the cooling medium to form a low temperature zone in the space above the crucible, thereby forming a temperature gradient with a high bottom and a low top, thereby reducing the temperature of the molten silicon liquid above the crucible, increasing the viscosity of the silicon liquid, and facilitating the crystallization of the silicon liquid following the seed crystal.
  • the silicon core can be cooled, thereby increasing the drawing speed of the silicon core. According to the present application, while increasing the drawing speed of the silicon core, it also achieves the simultaneous drawing of multiple silicon cores, etc. When the present application is used for a device for simultaneously drawing multiple silicon cores from broken silicon materials, it effectively avoids the waste of resources of broken silicon materials, etc.
  • a heat preservation plate is provided below the crystal cooling mechanism, such as the lower flange or the cooling plate, and the surface of the crystal cooling mechanism is insulated by the heat preservation plate, which effectively prevents volatiles from adhering to the bottom and side walls of the crystal cooling mechanism due to condensation. While preventing volatiles from adhering to the crystal cooling mechanism, the present application prevents the cooling of the corresponding crucible area due to the low temperature below the crystal cooling mechanism due to the heat preservation effect of the heat preservation plate, thereby preventing the crystal cooling mechanism from taking away too much temperature, thereby reducing the heating energy consumption, etc.
  • the cooling effect of the cooling medium in the crystal cooling mechanism is completely applied to the inner wall of the pulling hole on the crystal, thereby improving the cooling effect on the pulled crystal, achieving rapid crystallization of the crystal, and achieving the purpose of increasing the crystal pulling speed, etc.
  • FIG1 is a three-dimensional structure of a cooling device according to a first embodiment of the present application.
  • FIG2 is a schematic diagram of a partial three-dimensional structure of a cooling device according to a first embodiment of the present application
  • FIG. 3 is a schematic structural diagram of an upper flange of a cooling device according to a first embodiment of the present application
  • FIG. 4 is a schematic structural diagram of a lower flange of a cooling device according to a first embodiment of the present application
  • FIG. 5 is a second structural schematic diagram of a cooling medium channel of a cooling device according to the first embodiment of the present application.
  • FIG. 6 is a third structural schematic diagram of a cooling medium channel of the cooling device according to the first embodiment of the present application.
  • FIG. 7 is a fourth structural schematic diagram of a cooling medium channel of the cooling device according to the first embodiment of the present application.
  • FIG8 is a schematic structural diagram of a sleeve according to a first embodiment of the present application.
  • FIG. 9 is a first structural schematic diagram of a cooling plate connected to a cooling device according to the first embodiment of the present application.
  • FIG. 10 is a second structural schematic diagram of the cooling disk connected to the cooling device according to the first embodiment of the present application.
  • FIG. 11 is a third structural schematic diagram of the cooling disk connected to the cooling device according to the first embodiment of the present application.
  • FIG12 is a schematic structural diagram of a partition according to the first embodiment of the present application.
  • FIG. 13 is a fourth structural schematic diagram of the cooling disk connected to the cooling device according to the first embodiment of the present application.
  • FIG14 is a schematic diagram of a specific three-dimensional structure of the cooling plate shown in FIG13;
  • FIG15 is a schematic diagram of the three-dimensional structure of a cooling device provided with a heat preservation plate according to the second embodiment of the present application.
  • FIG16 is a partial three-dimensional structural schematic diagram of a cooling device provided with a heat preservation plate according to the second embodiment of the present application.
  • FIG17 is a schematic structural diagram of an upper flange of a device according to a second embodiment of the present application.
  • FIG18 is a schematic structural diagram of a lower flange of a device according to a second embodiment of the present application.
  • FIG19 is a schematic diagram of a first replacement structure of a thermal insulation board according to a second embodiment of the present application.
  • FIG20 is a schematic diagram of a second alternative structure of the insulation board according to the first embodiment of the present application.
  • FIG21 is a schematic diagram of a third alternative structure of the insulation board according to the first embodiment of the present application.
  • FIG22 is a schematic diagram of a fourth alternative structure of the insulation board according to the first embodiment of the present application.
  • FIG23 is a schematic diagram of specific applications according to the first and second embodiments of the present application.
  • FIG24 is a schematic diagram of a fifth alternative structure of the insulation board according to the second embodiment of the present application.
  • FIG25 is a schematic structural diagram of a stepped step on an insulation board according to a second embodiment of the present application.
  • FIG. 26 is a schematic diagram of a replacement structure of FIG. 7 .
  • the terms “set”, “install”, “connect”, and “connect” should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements.
  • the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
  • the present application provides a crystal cooling device for simultaneously pulling a plurality of crystals.
  • the crystal cooling device is provided with a plurality of first pulling holes for the pulled crystals to pass through and a cooling medium channel for cooling the crystals.
  • the crystal cooling device can cool the pulled crystal faster and can pull multiple crystals at the same time, thereby increasing the silicon core pulling speed.
  • FIGS 1 to 14 show a crystal cooling device for an artificial crystal furnace, which is a specific example of the crystal pulling mechanism of the present application.
  • the crystal cooling device includes an upper flange 2003, a lower flange 2005, a crystal cooling tube 2007 and a cooling medium channel.
  • the upper flange 2003 is connected to the crystal cooling device lifting mechanism.
  • a plurality of crystal cooling tubes 2007 for cooling the crystal are provided between the upper flange 2003 and the lower flange 2005, and a first pulling hole for the crystal rod to pass through is formed in the crystal cooling tube 2007.
  • the plurality of crystal cooling tubes 2007 are arranged in the form of a crystal cooling tube 2007 in the middle, and then a plurality of groups of crystal cooling tubes 2007 are radially arranged on the periphery of the middle crystal cooling tube 2007.
  • Each group of crystal cooling tubes 2007 includes at least two crystal cooling tubes 2007.
  • the multiple groups of crystal cooling tubes 2007 can be arranged in the form of crystal cooling tubes 2007 located on a concentric circle as one group; or crystal cooling tubes 2007 extending outward along the same diameter as one group; the number of crystal cooling tubes 2007 is selected according to the number of crystals to be pulled.
  • a cooling medium channel is arranged on the periphery of the crystal cooling tube 2007, and a cooling medium for cooling is introduced into the cooling medium channel.
  • the inlet of the cooling medium channel is connected to the cooling source through a pipeline, and the outlet of the cooling medium channel is connected to the cooling medium recovery mechanism through a pipeline, thereby forming the crystal cooling device for the artificial crystal furnace.
  • the connecting tube 2004 and the inner connecting tube 20031 may be used to form a cooling medium channel, and the cooling pipe 2007 is placed therein to cool the whole.
  • the specific solution is described below.
  • a cooling plate 20025 may be provided below the lower flange 2005.
  • a cavity 20024 is provided inside the cooling plate 20025, and a plurality of fixing columns 20026 are provided inside the cavity 20024.
  • a crystal pulling hole 20027 is provided on each fixing column 20026.
  • the cavity 20024 is respectively connected to the water outlet pipe 20023 and the water inlet pipe 20028.
  • the water outlet pipe 20023 and the water inlet pipe 20028 are connected to the cooling medium channel.
  • the upper end of the water inlet pipe 20028 is connected to the water inlet chamber 20011 on the upper flange 2003, and the upper end of the water outlet pipe 20023 is connected to the water collecting chamber 20016 on the lower flange 2005; or as shown in Figure 10, the upper end of the water inlet pipe 20028 is connected to the water inlet chamber 20011 on the upper flange 2003, and the upper end of the water outlet pipe 20023 is connected to the return water chamber 20020 on the upper flange 2003.
  • a cooling plate 20025 is provided below the lower flange 2005, a cavity 20024 is provided inside the cooling plate 20025, a plurality of fixing columns 20026 are provided inside the cavity 20024, a crystal pulling hole 20027 is provided on each fixing column 20026, the cavity 20024 is respectively connected to the water outlet pipe 20023 and the water inlet pipe 20028, the water outlet pipe 20023 and the water inlet pipe 20028 respectively pass through the lower flange 2005 and are connected to the cooling medium channel composed of the lower flange 2005, the connecting tube 2004 and the upper flange 2003.
  • the water outlet pipe 20023 and the water inlet pipe 20028 are connected to the water inlet branch and the water outlet branch provided on the lower flange 2005.
  • the upper ends of the water outlet pipe 20023 and the water inlet pipe 20028 can also pass through the lower flange 2005 and directly connect to the water outlet 2002 and the water inlet 2006 set on the upper flange 2003, that is, the cooling plate 20025 forms a separate cooling circuit.
  • the water outlet 2002 and the water inlet 2006 on the upper flange 2003 can be set to multiple, that is, the cooling plate 20025 and the crystal cooling pipe 2007 are cooled respectively through multiple water outlets 2002 and water inlets 2006.
  • the upper end of the water outlet pipe 20023 or the water inlet pipe 20028 is connected to the water outlet 2002 or the water inlet 2006, and the upper end of the water inlet pipe 20028 or the water outlet pipe 20023 is connected to the cooling medium channel composed of the lower flange 2005, the connecting tube 2004 and the upper flange 2003, that is, the form of independent inlet and overall outlet or overall inlet and independent outlet is realized.
  • which component the water outlet pipe 20023 and the water inlet pipe 20028 are connected to can be flexibly set according to the structural form of the cooling medium channel.
  • a cooling plate 20025 is arranged below the lower flange 2005, and the inner hole of each crystal cooling tube 2007 on the lower flange 2005 corresponds to and is concentrically arranged with each crystal pulling hole 20027 on the cooling plate 20025. This ensures that the crystal rod can smoothly pass through the crystal pulling hole 20027 and the crystal cooling tube 2007, and the operator can observe the crystal pulling condition through the gap between the lower flange 2005 and the cooling plate 20025.
  • the seed crystal When in use, after the seed crystal drives the melt into the crystal pulling hole 20027 on the cooling plate 20025, the seed crystal will begin to crystallize and form a new crystal rod as the temperature decreases.
  • the crystal rod passes through the crystal pulling hole 20027 and enters the crystal cooling tube 2007, the crystal cooling tube 2007 cools the crystal rod again to form the required crystal rod.
  • the operator can observe the drawing of the crystal rod through the gap between the lower flange 2005 and the cooling plate 20025.
  • the crystal cooling tube 2007 can not only cool the crystal rod (because the cooling medium in the cooling medium channel cools the crystal cooling tube 2007, thereby forming the temperature gradient area required for crystal growth), but also play the role of guiding the crystal rod, ensuring that the lower end of the crystal rod will not shake (it should be noted that when the crystal rod is drawn to a certain length, if the upper end shakes slightly, it will be transmitted to the lower end of the crystal rod, and the amplitude of the shaking will increase by multiples or dozens of times, thereby affecting the drawing of the crystal rod. At present, the drawing length of the crystal rod is generally about 2m to 3m).
  • the first structure of the cooling medium channel is to set a connecting tube 2004 between the upper flange 2003 and the lower flange 2005.
  • a lower annular positioning step 2008 can be set below the upper flange 2003
  • an upper annular positioning step 20010 can be set above the lower flange 2005
  • the upper and lower ends of the connecting tube 2004 are respectively sleeved on the lower annular positioning step 2008 and the upper annular positioning step 20010
  • the connecting tube 2004 is welded to the upper flange 2003 and the lower flange 2005 by welding.
  • a plurality of crystal cooling tubes 2007 are arranged in the connecting tube 2004.
  • each crystal cooling tube 2007 is respectively connected to the crystal upper through hole 2001 arranged on the upper flange 2003, and the lower end of each crystal cooling tube 2007 is respectively connected to the crystal lower through hole 2009 arranged on the lower flange 2005.
  • the cooling medium channel is formed by the cavity between the inner edge surface of the connecting tube 2004 and the lower end surface of the upper flange 2003 and the upper end surface of the lower flange 2005.
  • the upper flange 2003 is provided with a water outlet 2002 and a water inlet 2006, which respectively form the inlet and outlet of the cooling medium channel.
  • the structure of the upper flange 2003 is that the upper flange 2003 is a solid structure, and the upper flange 2003 is provided with a water outlet 2002 and a water inlet 2006 and a plurality of crystal through holes 2001 penetrating from the upper surface to the lower surface.
  • the structure of the lower flange 2005 is that the lower flange 2005 is a solid structure, and the lower flange 2005 is provided with a plurality of crystal lower through holes 2009 penetrating from the upper surface to the lower surface.
  • the cooling medium When in use, the cooling medium enters the cooling medium channel composed of the upper flange 2003, the connecting tube 2004 and the lower flange 2005 through the water inlet 2006. When the entire cooling medium channel is filled with the cooling medium, the cooling medium flows out from the water outlet 2002, thereby achieving the purpose of cooling the crystal rod in each crystal cooling tube 2007.
  • the second structure of the cooling medium channel is to respectively sleeve the sleeve 20013 on the periphery of each crystal cooling tube 2007.
  • the upper end of each sleeve 20013 is respectively connected to the water inlet cavity 20011 arranged in the middle of the upper flange 2003, and the lower end of each sleeve 20013 is respectively connected to the water collecting cavity 20016 arranged in the middle of the lower flange 2005.
  • the cooling medium channel is formed by the cooling cavity 20012 between the inner edge surface of the sleeve 20013 and the outer edge surface of the crystal cooling tube 2007, the water inlet cavity 20011 and the water collecting cavity 20016.
  • the water inlet cavity 20011 is connected to the water inlet 2006, and the water collecting cavity 20016 is connected to the water outlet 2002 through the return pipe 20014.
  • the water outlet 2002 and the water inlet 2006 respectively form the inlet and outlet of the cooling medium channel.
  • the cross-sectional shape of the sleeve 20013 can be a circle as shown in FIG8; or the cross-sectional shape of the sleeve 20013 can also be set to be a complete circle surrounded by two semicircles; or the cross-sectional shape of the sleeve 20013 can also be set to be a complete circle surrounded by multiple arcs; or the cross-sectional shape of the sleeve 20013 can also be set to be a complete circle surrounded by multiple arcs; or The sleeve 20013 is configured to be a complete ellipse surrounded by two semi-ellipses; when the cross-sectional shape of the sleeve 20013 is configured to be an ellipse, a gap can be provided between the two side walls of the short axis of the ellipse and the outer edge surface of the crystal cooling tube 2007, or there
  • the elliptical sleeve 20013 can be sleeved on the crystal cooling tube 2007 and can also achieve the same technical effect as providing the partition 20029 between the circular sleeve 20013 and the crystal cooling tube 2007.
  • the structure of the upper flange 2003 is that a groove that is sunken upward is provided on the lower surface of the upper flange 2003, or a groove that is sunken downward is provided on the upper surface of the upper flange 2003, and a lower cover plate 20017 is provided at the open end of the groove.
  • the cavity formed by the lower cover plate 20017 and the groove i.e., the cavity enclosed in the groove by the lower cover plate 20017) is the water inlet cavity 20011, and a plurality of crystal cooling pipe perforations, a water outlet 2002, and a water inlet 2006 that penetrate to the upper surface of the upper flange 2003 are provided at the bottom of the groove.
  • a plurality of casing perforations and return pipe perforations are provided on the lower cover plate 20017.
  • the structure of the lower flange 2005 is that a groove is provided on the upper surface of the lower flange 2005, an upper cover plate 20015 is provided at the open end of the groove, and a plurality of crystal cooling pipe through holes are provided at the bottom of the groove, which penetrate to the lower surface of the lower flange 2005.
  • a plurality of sleeve through holes are provided on the upper cover plate 20015.
  • the cooling medium When in use, the cooling medium enters the water inlet cavity 20011 in the upper flange 2003 through the water inlet 2006, and then the cooling medium is divided into each cooling cavity 20012 through the water inlet cavity 20011. Then, the cooling medium flows through the cooling cavity 20012 and enters the water collecting cavity 20016 in the lower flange 2005. Finally, the cooling medium enters the return pipe 20014 through the water collecting cavity 20016, and then enters the water outlet 2002 through the return pipe 20014.
  • the third structure of the cooling medium channel is to respectively sleeve the sleeve 20013 on the periphery of each crystal cooling tube 2007.
  • a downwardly recessed semicircular step 20022 is respectively provided at the upper end of each sleeve 20013, and the upper end of each sleeve 20013 is respectively connected to the water inlet cavity 20011 disposed at the upper part of the upper flange 2003, and the upper end of each semicircular step 20022 is respectively connected to the water return cavity 20020 disposed at the lower part of the upper flange 2003.
  • the lower end of each sleeve 20013 is respectively connected to the water collection cavity 20016 disposed at the upper part of the lower flange 2005.
  • the cooling medium channel is formed by the cooling cavity 20012 between the inner edge surface of the sleeve 20013 and the outer edge surface of the crystal cooling tube 2007, the water inlet cavity 20011, the water return cavity 20020 and the water collection cavity 20016.
  • the water inlet chamber 20011 is connected to the water inlet 2006, and the water return chamber 20020 is connected to the water outlet 2002 through the connecting pipe 20019.
  • the water outlet 2002 and the water inlet 2006 respectively form the inlet and outlet of the cooling medium channel.
  • the structure of the upper flange 2003 is that an upper groove and a lower groove are respectively provided on the upper and lower surfaces of the upper flange 2003, and a water inlet cavity cover plate 20018 and a water return cavity cover plate 20021 are respectively provided at the open ends of the upper groove and the lower groove.
  • the cavity formed by the water inlet cavity cover plate 20018 and the upper groove is the water inlet cavity 20011
  • the cavity formed by the water return cavity cover plate 20021 and the lower groove is the water return cavity 20020.
  • the water inlet cavity cover plate 20018 is respectively provided with a plurality of crystal cooling pipe perforations penetrating to the bottom of the lower groove, the water outlet 2002 and the water inlet 2006.
  • the water return cavity cover plate 20021 is provided with a plurality of sleeve perforations and water return pipe perforations.
  • a semicircular water inlet hole penetrating to the bottom of the lower groove is provided at the bottom of the upper groove.
  • the water return cavity 20020 is connected to the water outlet 2002 through the connecting pipe 20019.
  • the structure of the lower flange 2005 is that a downwardly concave groove is provided on the upper surface of the lower flange 2005, an upper cover plate 20015 is provided at the open end of the groove, a plurality of crystal cooling tube through holes are provided at the bottom of the groove and pass through to the bottom of the lower flange 2005, and a plurality of sleeve through holes are provided on the upper cover plate 20015.
  • a partition 20029 can be set in the cooling cavity 20012 between the crystal cooling tube 2007 and the sleeve 20013, as shown in FIG12.
  • the cooling cavity 20012 is divided into a water inlet cavity and a water outlet cavity by the partition 20029, that is, the cooling medium is guided to the lower end of the crystal cooling tube 2007.
  • the cooling medium enters the water inlet cavity 20011 through the water inlet 2006, and then the cooling medium is diverted to the water inlet cavity in each cooling cavity 20012 through the water inlet cavity 20011.
  • the cooling medium flows through the water inlet cavity of the cooling cavity 20012, it enters the water collecting cavity 20016, and then enters the water outlet cavity of each cooling cavity 20012 through the water collecting cavity 20016, and finally enters the water return cavity 20020 through the water outlet cavity.
  • the cooling medium in the water return cavity 20020 enters the water outlet 2002 through the connecting pipe 20019.
  • the fourth structure of the cooling medium channel is to respectively sleeve the sleeve 20013 on the periphery of each crystal cooling tube 2007.
  • a downwardly recessed semicircular step 20022 is respectively provided at the upper end of each sleeve 20013.
  • the upper end of each sleeve 20013 is respectively connected to the water inlet cavity 20011 provided at the upper part of the upper flange 2003, and the upper end of each semicircular step 20022 is respectively connected to the water return cavity 20020 provided at the lower part of the upper flange 2003.
  • the lower end of each sleeve 20013 is respectively connected to the lower flange 2005.
  • the cooling medium channel is formed by the cooling cavity 20012 between the inner edge surface of the sleeve 20013 and the outer edge surface of the crystal cooling tube 2007, the water inlet cavity 20011 and the water return cavity 20020.
  • the water inlet chamber 20011 is connected to the water inlet 2006, and the water return chamber 20020 is connected to the water outlet 2002 through the connecting pipe 20019.
  • the water outlet 2002 and the water inlet 2006 respectively form the inlet and outlet of the cooling medium channel.
  • the third structure of the upper flange 2003 is that an upper groove and a lower groove are respectively provided on the upper and lower surfaces of the upper flange 2003, and an inlet cavity cover plate 20018 and a return cavity cover plate 20021 are respectively provided at the opening ends of the upper and lower grooves.
  • the cavity formed by the inlet cavity cover plate 20018 and the upper groove is the inlet cavity 20011, and the cavity formed by the return cavity cover plate 20021 and the lower groove is the return cavity 20020.
  • the cover plate 20018 is provided with a plurality of crystal cooling pipe perforations penetrating to the bottom of the lower groove, a water outlet 2002 and a water inlet 2006.
  • the return water chamber cover plate 20021 is provided with a plurality of sleeve perforations and return water pipe perforations.
  • a semicircular water inlet hole penetrating to the bottom of the lower groove is provided at the bottom of the upper groove.
  • the return water chamber 20020 is connected to the water outlet 2002 through a connecting pipe 20019.
  • the structure of the lower flange 2005 is that the lower flange 2005 is a solid structure, and a plurality of crystal lower through holes 2009 penetrating to the bottom of the lower flange 2005 are arranged on the upper surface of the lower flange 2005 .
  • the lower flange 2005 shown in FIG. 7 can be replaced with the pipe opening plugging ring 20037 in FIG. 26 to also achieve the purpose of the present invention.
  • the structure of the upper flange 2003 is consistent with that of the upper flange 2003 in FIG. 7 , that is, an upper groove and a lower groove are respectively provided on the upper and lower surfaces of the upper flange 2003 , and a water inlet cavity cover plate 20018 and a water return cavity cover plate 20021 are respectively provided at the opening ends of the upper groove and the lower groove.
  • the cavity formed by the water inlet cavity cover plate 20018 and the upper groove is the water inlet cavity 20011
  • the cavity formed by the water return cavity cover plate 20021 and the lower groove is the water return cavity 20020.
  • the water inlet cavity cover plate 20018 is respectively provided with a plurality of crystal cooling pipe perforations penetrating to the bottom of the lower groove, the water outlet 2002 and the water inlet 2006.
  • the water return cavity cover plate 20021 is provided with a plurality of sleeve perforations and water return pipe perforations.
  • a semicircular water inlet hole penetrating to the bottom of the lower groove is provided at the bottom of the upper groove.
  • the water return cavity 20020 is connected to the water outlet 2002 through the connecting pipe 20019.
  • the upper end of the crystal cooling tube 2007 passes through the water return chamber cover plate 20021, the water return chamber 20020, and the water inlet chamber 20011 in sequence, and then connects to the sleeve perforation on the water inlet chamber cover plate 20018.
  • the outer edge surface of the crystal cooling tube 2007 is sleeved with the sleeve 20013, and the outer edge surface of the crystal cooling tube 2007 and the inner edge surface of the sleeve 20013 are arranged at intervals.
  • the cavity between the outer edge surface of the crystal cooling tube 2007 and the inner edge surface of the sleeve 20013 forms an independent cooling medium channel.
  • the pipe opening blocking ring 20037 is respectively arranged between the outer edge surface of the lower end of the crystal cooling tube 2007 and the inner edge surface of the lower end of the sleeve 20013 (the function of the pipe opening blocking ring 20037 is equivalent to the function of the lower flange 2005 in Figure 7).
  • the shape of the upper flange 2003 in FIG. 26 is set to an annular structure, that is, a through middle hole is set in the middle of the upper flange 2003, and at least one circle of sleeve perforations is set on the upper flange 2003, and the sleeve perforations are respectively connected to the crystal cooling tube 2007.
  • a sleeve support ring 20035 can be set on the outer edge surface of the sleeve 20013.
  • a crystal observation hole 20036 can be set at the lower end of the independent cooling medium channel, and the drawing condition of the crystal can be observed through the crystal observation hole 20036.
  • a sealing plate can be used to seal the crystal cooling tube 2007 and the opening on the sleeve 20013, so that the cavity between the crystal cooling tube 2007 and the sleeve 20013 forms a closed cavity.
  • a partition 20029 can be set in the cooling chamber 20012 between the crystal cooling tube 2007 and the sleeve 20013, as shown in Figure 12.
  • the cooling chamber 20012 is divided into a water inlet cavity and a water outlet cavity by the partition 20029, and the lower ends of the water inlet cavity and the water outlet cavity are connected to form a circulation channel.
  • the cooling medium enters the water inlet cavity 20011 through the water inlet 2006, and then the cooling medium is diverted to the water inlet cavity in each cooling chamber 20012 through the water inlet cavity 20011.
  • the cooling medium flows through the water inlet cavity of the cooling chamber 20012 and enters the water outlet cavity in the cooling chamber 20012, and then enters the return water chamber 20020 through the water outlet cavity.
  • the cooling medium in the return water chamber 20020 enters the water outlet 2002 through the connecting pipe 20019.
  • the water inlet 2006 provided on the upper flange 2003 can be set to one or more.
  • the upper flange 2003 can be set to a structure as shown in FIG. 5, so that the cooling medium can be diverted to the cooling disk 20025 and the cooling medium channel through the water inlet cavity 20011.
  • the upper flange 2003 includes an upper disc, a middle disc and a lower disc.
  • the upper disc, the middle disc and the lower disc are stacked to form a flange body.
  • a middle hole 20034 penetrating the flange body is provided at the center of the upper part of the flange body, a hollow water return chamber 20020 is provided at the upper part of the flange body, and a hollow water inlet chamber 20011 is provided at the lower part of the flange body.
  • a connecting pipe 20019 penetrating to the water inlet chamber 20011 is provided on the upper part of the flange body, and the connecting pipe 20019 forms a water inlet 2006.
  • a water outlet 2002 penetrating to the water return chamber 20020 is provided on the upper part of the flange body, and a water return transition pipe 20030 penetrating to the water return chamber 20020 is provided on the lower part of the flange body.
  • a crystal through hole 2001 penetrating the flange body is provided on the outer periphery of the middle hole 20034, and the crystal through hole 2001 is provided corresponding to the first pulling hole.
  • a water outlet penetrating to the water inlet cavity 20011 is provided below the flange body, and the water outlet is connected to the water inlet of the cooling medium channel, and the water outlet of the cooling medium channel is connected to the return water transition pipe 20030.
  • a transition ring 20033 may be provided below the flange body, and a middle hole 20034 may be provided in the middle of the transition ring 20033.
  • a crystal perforation 2001, a water outlet, and a water return port are provided above the transition ring 20033.
  • the upper part of the transition ring 20033 may be connected to the flange body by bolts, and the lower part of the transition ring 20033 may be fixedly connected to the connecting tube 2004 and the inner connecting tube 20031, so that the connecting tube 2004 and the inner connecting tube 20031 may be prevented from being directly connected to the flange body, and the flange body, the connecting tube 2004, and the inner connecting tube 20031 may be movably connected.
  • sealing rings are provided at the water outlet and the water return port, respectively.
  • the sealing ring may be provided on the transition ring 20033 or on the flange body.
  • a connecting tube 2004 and an inner connecting tube 20031 are respectively arranged between the flange body and the lower flange 2005.
  • the crystal cooling tube 2007 is arranged in the cavity between the connecting tube 2004 and the inner connecting tube 20031, the upper end of the crystal cooling tube 2007 is connected to the crystal upper through hole 2001 arranged on the flange body, and the lower end of the crystal cooling tube 2007 is connected to the crystal lower through hole 2009 arranged on the lower flange 2005.
  • the space between the inner edge surface of the connecting tube 2004 and the lower end surface of the upper flange 2003, the upper end surface of the lower flange 2005, and the outer edge surface of the inner connecting tube 20031 is The cavity forms a cooling medium channel.
  • the water outlet 2002 and the water inlet 2006 form the inlet and outlet of the cooling medium channel respectively.
  • a guide plate 20032 is arranged in the cooling medium channel.
  • the cooling medium can be forced to flow in a predetermined direction, thereby achieving a more uniform cooling effect.
  • a cooling plate 20025 is provided below the lower flange 2005.
  • a cavity 20024 is provided in the cooling plate 20025, and a crystal pulling hole 20027 corresponding to the lower crystal through hole 2009 and a water outlet and a water inlet respectively connected to the cavity 20024 are provided on the cooling plate 20025.
  • the water inlet is connected to the lower end of the water inlet pipe 20028, and the upper end of the water inlet pipe 20028 passes through the lower flange 2005 to connect to the water outlet below the flange body.
  • the water outlet is connected to the lower end of the water outlet pipe 20023, and the upper end of the water outlet pipe 20023 passes through the lower flange 2005 to connect to the cooling medium channel on the flange body.
  • a cooling plate 20025 When in use, a cooling plate 20025 may or may not be provided below the lower flange 2005. If a cooling plate 20025 is provided below the lower flange 2005, the specific structure is shown in FIG13, the cooling medium enters the water inlet cavity 20011 through the water inlet 2006, then enters the water inlet pipe 20028 through the water outlet on the water inlet cavity 20011, enters the cavity 20024 in the cooling plate 20025 through the water inlet pipe 20028, then enters the water outlet pipe 20023 through the cavity 20024, enters the cooling medium channel through the water outlet pipe 20023, and is guided by the guide plate 20032 in the cooling medium channel, enters the return water cavity 20020 through the return water transition pipe 20030, and enters the water outlet 2002 from the return water cavity 20020 to be discharged.
  • the cooling medium enters the water inlet cavity 20011 through the water inlet 2006, and then enters the water inlet pipe 20028 through the water outlet on the water inlet cavity 20011.
  • the water inlet pipe 20028 is provided inside the cooling medium channel, the lower end of the water inlet pipe 20028 is located at the lower part of the cooling medium channel. After the cooling medium flows into the lower part of the cooling medium channel through the water inlet pipe 20028, it is guided by the guide plate 20032 in the cooling medium channel, and the cooling medium flows from the lower part to the upper part of the cooling medium channel.
  • the cooling medium enters the return water cavity 20020 through the return water transition pipe 20030 at the upper part of the cooling medium channel, and enters the water outlet 2002 from the return water cavity 20020 to be discharged.
  • the water inlet pipe 20028 When the water inlet pipe 20028 is arranged outside the cooling medium channel, the lower end of the water inlet pipe 20028 is located at the lower part of the cooling medium channel, and the lower end of the water inlet pipe 20028 is connected to the water inlet arranged at the lower part of the cooling medium channel through an elbow. After the cooling medium flows into the lower part of the cooling medium channel through the water inlet pipe 20028, it is guided by the guide plate 20032 in the cooling medium channel, and the cooling medium flows from the lower part to the upper part of the cooling medium channel.
  • the cooling medium enters the return water cavity 20020 through the return water transition pipe 20030 at the upper part of the cooling medium channel, and enters the water outlet 2002 from the return water cavity 20020 to be discharged. Or when the cooling plate 20025 is not arranged below the lower flange 2005, the cooling medium enters the water inlet cavity 20011 through the water inlet 2006, and then enters the water inlet pipe 20028 through the water outlet on the water inlet cavity 20011. At this time, the lower end of the water inlet pipe 20028 is located at the upper part of the cooling medium channel. After the cooling medium enters the cooling medium channel, it is guided to the bottom of the cooling medium channel through the guide plate 20032 in the cooling medium channel.
  • the outlet pipe 20023 is connected to the lower part of the cooling medium channel, and the lower end of the outlet pipe 20023 is located at the lower part of the cooling medium channel.
  • the upper end of the outlet pipe 20023 is connected to the return water transition pipe 20030.
  • the cooling medium at the bottom of the cooling medium channel enters the return water chamber 20020 through the outlet pipe 20023 and the return water transition pipe 20030, and enters the outlet 2002 from the return water chamber 20020 for discharge.
  • cooling medium inlets and outlets involved can be arranged in multiple groups.
  • the crystal cooling device is arranged above the crucible located in the furnace chamber, and the lower surface of the lower flange 2005 or the lower surface of the cooling plate 20025 is close to the silicon material melt in the crucible but cannot contact it.
  • the upper lifting head drives the seed crystal to descend.
  • the seed crystal passes through the crystal cooling tube 2007 or the crystal cooling tube 2007 and the crystal pulling hole 20027, it contacts with the silicon material melt and stops the seed crystal from descending. After the lower end of the seed crystal is melted, the seed crystal is slowly lifted.
  • the temperature of the lower surface of the lower flange 2005 or the lower surface of the cooling plate 20025 forms a temperature gradient with high temperature at the bottom and low temperature at the top.
  • the silicon material melt rises with the seed crystal.
  • the silicon material melt approaches the lower surface of the lower flange 2005 or the lower surface of the cooling plate 20025, the silicon material melt gradually crystallizes because the temperature here is lower than the temperature of the crucible.
  • the crystallized silicon material melt enters the crystal cooling tube 2007 or the crystal cooling tube 2007 and the crystal pulling hole 20027, the temperature gradually decreases, thereby forming the required silicon core.
  • the cooling medium channel in the present invention can force cooling of the silicon core just after crystallization, greatly improving the yield rate and pulling efficiency of the silicon core.
  • the broken silicon materials involved in the present invention include not only the leftover materials in the process of silicon core preparation, accidentally broken silicon cores, and broken materials generated by multi-crystalline/single-crystalline silicon production enterprises in the reduction, cutting, grinding and polishing process stages, but also silicon materials in other shapes (such as cauliflower materials, silicon rods of shorter lengths, etc.), or directly purchasing new silicon materials and using the present invention to directly draw silicon cores.
  • the present invention When the present invention is actually applied, it can not only be used for drawing silicon cores, but also can realize the drawing of other crystal materials.
  • This embodiment provides a plurality of crystal cooling tubes between the upper flange and the lower flange, and a cooling medium channel is provided on the periphery of the crystal cooling tube, so that a low temperature zone can be formed in the space above the crucible by using the cooling medium, thereby forming a temperature gradient with a high temperature at the bottom and a low temperature at the top, thereby reducing the temperature of the molten silicon liquid above the crucible, increasing the viscosity of the silicon liquid, and facilitating the crystallization of the silicon liquid following the seed crystal.
  • the silicon core can be cooled, thereby increasing the drawing speed of the silicon core. According to this embodiment, while increasing the drawing speed of the silicon core, the simultaneous drawing of multiple silicon cores is also achieved.
  • this embodiment is used for a device for simultaneously drawing multiple silicon cores from broken silicon materials, it effectively avoids the waste of resources of broken silicon materials, and is suitable for large-scale promotion and application.
  • FIGS. 15 to 21 show schematic diagrams of a cooling device provided with a heat preservation plate according to a second embodiment of the present application.
  • the cooling device of one embodiment is combined with a heat preservation plate.
  • the heat preservation plate is arranged below the cooling device.
  • the arrangement of the cooling medium channel, sleeve, cooling plate, partition and other structures in this embodiment can adopt the structures in the above-mentioned first embodiment (for example, as shown in Figures 5 to 14), and the structure of the insulation board in this embodiment is shown in Figures 15, 16, 19, 20, 21 and 22, but the structures of the various components of the present application are not limited to this.
  • a crystal cooling device used for crystal pulling as described in conjunction with Figures 15 to 18 includes an upper flange 4003, a lower flange 4005, a crystal cooling tube 4007, a cooling medium channel and an insulation plate 40030, and a plurality of crystal cooling tubes 4007 are provided between the upper flange 4003 and the lower flange 4005.
  • the multiple crystal cooling tubes are arranged in the form of a crystal cooling tube in the middle, and multiple groups of crystal cooling tubes are radially arranged on the periphery of the middle crystal cooling tube, and each group of crystal cooling tubes includes at least two crystal cooling tubes.
  • the second arrangement of the multiple crystal cooling tubes is to radially arrange multiple groups of crystal cooling tubes on the periphery of the gas perforations 40031 on the upper flange 4003 (as shown in FIG. 16 ), and the arrangement of the multiple groups of crystal cooling tubes can be that the crystal cooling tubes located on a concentric circle are one group; or the crystal cooling tubes extending outward along the same diameter are one group.
  • Each group of crystal cooling tubes includes at least two crystal cooling tubes, and the number of crystal cooling tubes 4007 is selected according to the number of crystals to be drawn.
  • a cooling medium channel is provided on the periphery of the crystal cooling tube 4007, and a cooling medium for cooling is introduced into the cooling medium channel.
  • the inlet of the cooling medium channel is connected to the cooling source through a pipeline, and the outlet of the cooling medium channel is connected to the cooling medium recovery mechanism through a pipeline.
  • An insulation plate 40030 is provided under the lower flange 4005.
  • a cooling plate 20025 is provided below the lower flange 2005, a cavity 20024 is provided in the middle of the cooling plate 20025, a plurality of fixing columns 20026 are provided in the cavity 20024, a crystal pulling hole 20027 is provided on each fixing column 20026, and the cavity 20024 is respectively connected to the water outlet pipe 20023 and the water inlet pipe 20028.
  • the water outlet pipe 20023 and the water inlet pipe 20028 are connected to the cooling medium channel.
  • a heat preservation plate 40030 is provided below the cooling plate 20025 to form the crystal cooling device for crystal pulling.
  • the present invention can solve practical problems by providing a heat preservation board and achieve the following effects:
  • the outer surface temperature of the lower flange or cooling plate is lower than the temperature of the area where it is located.
  • the impurities in the silicon liquid and in the furnace chamber volatilize and float to the lower bottom surface or side wall of the lower flange or cooling plate.
  • the temperature of the lower flange or cooling plate is relatively low, so the volatiles condense and adhere to the bottom surface or side wall of the lower flange or cooling plate.
  • the volatiles When the volatiles accumulate to a certain thickness, due to air flow disturbance and thermal expansion and contraction effects, the volatiles will fall into the crucible and float on the upper surface of the molten liquid. Since the melting point of the volatiles is higher than the melting point of the silicon material, the volatiles will not be melted, let alone vaporized. In other words, the volatiles will continue to exist on the upper surface of the molten liquid. Since the crucible rotates during drawing, the volatiles in the crucible will not be stationary at a certain place on the upper surface of the silicon molten liquid, but will float in an uncertain position.
  • the outer edge of the drawn silicon core may be deformed or even stuck in the crystal hole due to the change of the silicon core diameter, and the machine will be forced to stop and end the current round of drawing.
  • the drawn silicon core cannot be used as a finished product and can only be scrapped.
  • the surface temperature of the lower flange or cooling plate caused by the cooling medium can be reduced or prevented from being lower than the temperature at which volatiles in the furnace adhere and deposit, thereby reducing or preventing volatiles in the melt from condensing and adhering to the outer surface of the lower flange or cooling plate.
  • the cooling effect of the cooling medium on each crystal drawing hole on the lower flange or cooling plate is the same.
  • a cylindrical heater is used to heat the outside of the crucible. Since it is a round crucible, the temperature of the outer area will be higher than that of the central area, and the temperature in the crucible will gradually decrease from the inner edge of the crucible to the center of the crucible.
  • the crystals on the outer ring of the lower flange or cooling plate have a lower crystallization rate than the crystals on the inner ring of the lower flange or cooling plate because the outer ring temperature is higher than the inner ring temperature (the closer to the center of the crucible, the faster the crystallization rate will be due to the relatively low temperature).
  • the diameter of the crystal on the outer ring of the lower flange or cooling plate will be smaller than the diameter of the crystal on the inner ring of the lower flange or cooling plate, which will lead to inconsistent diameters of multiple crystals drawn at the same time.
  • the uniformity of the temperature of each crystal lower through hole 2009 or crystal pulling hole 20027 on the lower flange 2005 or the cooling plate 20025 can be better guaranteed (that is, the temperature of the inner circle crystal lower through hole 2009 and the outer circle crystal lower through hole 2009 on the lower flange or the temperature of the inner circle crystal pulling hole 20027 and the outer circle crystal pulling hole 20027 on the cooling plate 20025 can be adjusted, so as to achieve the temperature of the inner circle and outer circle crystal lower through hole 2009 or crystal pulling hole 20027 tending to isothermal), thereby ensuring the consistency of crystallization of the inner and outer circle crystals.
  • the lower surface of the lower flange or cooling plate is close to but not in contact with the upper surface of the melt in the crucible. At this time, the low temperature of the lower flange or cooling plate surface will absorb part of the heat above the crucible, resulting in unnecessary heat loss and certain power loss.
  • the temperature of the crystallization area in the crucible can be made uniform, reducing or avoiding the undesired cooling of the crystallization area in the crucible caused by the cooling medium in the lower flange 2005 or the cooling plate 20025 (the surface temperature of the lower flange 2005 or the cooling plate 20025 is low, which can take away part of the heat, and the heat loss leads to a decrease in temperature).
  • the temperature of the crystallization area in the crucible is guaranteed not to decrease, it is not necessary to increase the heating power to ensure that the temperature of the crystallization area in the crucible is not decreased, thereby achieving the effect of reducing energy consumption (that is, by setting the heat preservation plate, the absorption of the temperature of the melt surface in the crucible by the lower flange 2005 or the cooling plate 20025 can be reduced or adjusted, thereby avoiding unnecessary heat loss, avoiding the increase of power consumption, etc.), and thus achieving a uniform temperature in the crystallization area of the crucible.
  • the surface thickness of the lower flange 4005 or the cooling plate 20025 can be increased.
  • the cooling effect of the lower flange 4005 or the cooling plate 20025 is further improved (the present application adjusts the wall thickness of the lower flange 4005 or the cooling plate 20025 by setting up a thermal insulation plate, thereby improving the cold air dissipation effect, that is, the thin wall dissipates the cold air quickly, and the thick wall dissipates the cold air slowly), thereby reducing the excessive loss of low temperature in the lower flange 4005 or the cooling plate 20025.
  • At least one step of upwardly concave steps is provided from outside to inside under the lower flange or cooling plate 40025 of the cooling device to form a stepped surface.
  • multiple circles of crystal pulling holes 40027 are arranged in sequence from the outer edge to the inside on the lower flange or cooling plate 40025 (as shown in Figure 22).
  • the main technical problem to be avoided is to overcome the problem of uneven temperature of the melt in the crucible.
  • At least one step of upwardly concave steps is provided from outside to inside under the lower flange or cooling plate 40025 to form a stepped surface, and a circle of crystal pulling holes 40027 is provided on each step of the stepped surface.
  • the shape of the stepped surface is consistent with the stepped step 4003003 on the insulation plate 40030 (as shown in Figures 21 or 22).
  • setting the steps can better ensure the uniformity of the temperature of the crystal perforations or crystal pulling holes 40027 on the lower flange 4005 or the cooling plate 40025, thereby ensuring the consistency of crystallization of the inner and outer ring crystals.
  • the insulation plate 40030 may be a flat plate structure, and a plurality of through holes 4003001 are provided on the insulation plate 40030, and each through hole 4003001 corresponds to the crystal lower through hole 4009 on the lower flange 4005 or the crystal pulling hole 40027 on the cooling plate 40025 (as shown in FIG20).
  • the outer dimensions of the insulation plate 40030 are greater than or equal to the outer dimensions of the lower flange 4005 or the cooling plate 40025.
  • a central hole may be provided in the middle of the insulation plate 40030, such as 4003002 in FIG22, and multiple groups of through holes may be provided radially around the central hole, such as 4003001 in FIG22, and the central hole and the through holes correspond to the crystal lower through hole 2009 or the crystal pulling hole 40027 on the lower flange or the cooling plate.
  • the insulation board 40030 when the insulation board 40030 is a flat structure, at least one step 4003003 protruding upward is provided on the top of the insulation board from the outside to the inside, and the step 4003003 corresponds to the step surface under the lower flange or the cooling device or the cooling plate 400254.
  • the insulation plate 40030 is configured to have a downwardly recessed groove in the middle of the insulation plate to form a barrel-shaped structure, and a plurality of through holes are provided on the insulation plate, each of which corresponds to the crystal lower through hole 4009 on the lower flange or the crystal pulling hole 40027 on the cooling plate 40025 (as shown in Figure 22), and the inner edge surface of the groove and the outer edge surface of the lower flange 4005 or the cooling plate 40025 are clearance fit or interference fit.
  • a downwardly concave groove is provided in the middle of the insulation board 40030 to form a barrel-shaped structure.
  • the replacement structure is to place an insulation ring on the insulation board of the flat structure, and the insulation ring and the insulation board of the flat structure are combined to form a barrel-shaped structure.
  • the insulation ring is an annular structure, and one insulation ring or multiple insulation rings are stacked together and placed on the insulation board of the flat plate structure. That is, the insulation board of the barrel structure can be set as an integral structure or a split structure.
  • the insulation board of the barrel structure includes an insulation ring and a bottom plate, the ring body of the insulation ring is set on the bottom plate or multiple insulation rings are stacked on the bottom plate, the ring body of the insulation ring forms the barrel wall of the insulation board of the barrel structure, and the bottom plate forms the barrel bottom of the insulation board of the barrel structure.
  • multiple arc-shaped insulation blocks are placed on the flat-plate insulation board to form an insulation ring, and the insulation ring formed by the multiple arc-shaped insulation blocks and the flat-plate insulation board are combined to form a barrel-shaped structure.
  • a complete insulation ring is cut into multiple arc blocks to form an arc insulation block, and then the cut arc blocks are reassembled into a complete insulation ring at a predetermined interval, so that the thickness of each arc insulation block and the interval between two arc insulation blocks can be adjusted.
  • the material of the heat preservation plate and the heat preservation ring of the flat plate structure can be set to the same material, or the material of the heat preservation plate and the heat preservation ring of the flat plate structure can be set to different materials.
  • thermal insulation filler 40032 is provided at the gap.
  • the thermal insulation filler is any one of quartz felt, graphite felt or zirconium felt.
  • the heat preservation plate 40030 when the heat preservation plate 40030 is set as a barrel-shaped structure, at least one step protruding upward is provided on the heat preservation plate from the outside to the inside, such as 4003003 in FIG22, and the step corresponds to the step surface below the lower flange 4005 or the cooling plate 40025.
  • the step can better ensure the uniformity of the temperature of the crystal lower through hole 4009 or the crystal pulling hole 40027 on the lower flange 4005 or the cooling plate 40025. Since the temperature distribution range of the crucible is that the peripheral temperature is higher than the central temperature, when pulling the crystal, the cooling range of the lower flange 4005 or the cooling plate 40025 should also change accordingly, thereby ensuring the consistency of the crystallization of the inner and outer rings.
  • the outer dimensions of the insulation board are larger than the outer dimensions of the lower flange or the cooling plate, and the structure is shown in FIG20.
  • the outer edge of the insulation board 40030 extends outward, which can reduce or prevent volatiles from adhering to the outer edge of the lower flange 4005 or the cooling plate 40025, and can also play the role of a tray, and the volatiles fall on the upper surface extended from the insulation board 40030.
  • the outer dimensions of the insulation board 40030 are equal to the outer dimensions of the lower flange or the cooling plate 40025, the structure is shown in FIG22.
  • the insulation board 40030 can be connected to the lower flange 4005 or the cooling plate 40025 by bonding, or by fixing with pins or screws, or by hanging below the lower flange 4005 or the cooling plate 40025 through a connecting rod, etc.
  • the material of the insulation board can be graphite felt, graphite plate, or carbon-carbon composite material plate, etc.
  • the barrel-shaped heat preservation plate can prevent volatiles from adhering and accumulating on the side wall of the lower flange or the cooling plate, and can also adjust the heat preservation effect of the lower flange or the side wall of the cooling plate.
  • the temperature of the lower crystal through hole 4009 or the crystal pulling hole 40027 on the outer ring of the lower flange or the cooling plate can be adjusted, thereby adjusting the diameter of the drawn columnar crystal.
  • the heat preservation filler 40032 can also be used to adjust the heat preservation temperature by adjusting the thickness of the added heat preservation filler while playing the heat preservation role, and finally adjust the temperature of the lower crystal through hole 4009 or the crystal pulling hole 40027 on the outer ring of the lower flange or the cooling plate, thereby adjusting the diameter of the drawn columnar crystal, etc.
  • a heat-insulating plate may be provided on the lower flange or the upper panel of the cooling plate, that is, the outer surface of the lower flange or the cooling plate is completely covered with a layer of heat-insulating material.
  • a center hole 4003002 that is consistent with the hole in the center of the cooling plate 40025 can be set in the middle of the insulation plate, and multiple holes 1003001 that correspond to the crystal pulling holes 40027 on the cooling plate 40025 are set on the periphery of the center hole.
  • the insulation plate is then provided with at least one step of upwardly convex steps 4003003 from outside to inside, and the step steps 4003003 cooperate with the step surface on the lower flange or the cooling plate 40025.
  • the insulation plate is then provided with at least one step of upwardly convex steps 4003003 from outside to inside, and the step steps 4003003 cooperate with the step surface on the lower flange or the cooling plate 40025.
  • the cooling medium is preferably cooling pure water, and other cooling gases can be selected.
  • a cooling plate 20025 (as shown in Figures 10 to 11) can also be set below the lower flange 4005, a cavity 20024 is set in the middle of the cooling plate 20025, a plurality of fixing columns 20026 are set in the cavity 20024, and a crystal pulling hole 20027 is set on each fixing column 20026, and the cavity 20024 is connected to the water outlet pipe 20023 and the water inlet pipe 20028 respectively, and the water outlet pipe 20023 and the water inlet pipe 20028 are connected to the water inlet and water outlet provided on the lower flange 2005 or 4005.
  • the present invention When the present invention is used in a specific application, it is arranged above the crucible in the furnace body, and the lower flange or the lower part of the cooling plate of the present invention is close to the molten liquid in the crucible but cannot contact it.
  • the upper pulling mechanism drives the seed crystal to descend.
  • the seed crystal passes through the lower perforation 2009 of the crystal or the lower perforation 2009 of the crystal and the crystal pulling hole 20027 and the perforation 100501, it contacts with the molten liquid and stops the seed crystal from descending.
  • the seed crystal After the lower end of the seed crystal is melted, the seed crystal is slowly lifted. Since the cooling medium is introduced into the lower flange or the cooling plate, at this time, the molten liquid follows the seed crystal to rise. When the molten liquid approaches the lower flange or the cooling plate, since the temperature here is lower than the temperature of the crucible, the molten liquid gradually crystallizes. When the crystallized molten liquid enters the lower perforation 2009 of the crystal or the lower perforation 2009 of the crystal and the crystal pulling hole 20027, the temperature gradually decreases to form the required columnar crystal.
  • the cooling medium in the lower flange or the cooling plate can forcefully cool the columnar crystals that have just crystallized through the crystal lower through-holes 2009 or the crystal lower through-holes 2009 and the crystal pulling holes 20027.
  • the insulation plate arranged on the lower flange or the cooling plate can prevent volatile substances from adhering to the surface of the lower flange or the cooling plate.
  • the insulation (cooling effect) of each circle of crystal lower through-holes 2009 or the crystal pulling holes 20027 can also be adjusted, thereby adjusting the diameter of the columnar crystals pulled by the inner and outer circles of crystal lower through-holes 2009 or the crystal pulling holes 20027.
  • the shape of the stepped steps 100502 arranged on the insulation board can be set to a circle or a plum blossom shape formed by an inwardly recessed arc between every two perforations 100501, or an outwardly protruding arc or various special shapes can be set between every two perforations 100501.
  • cooling medium inlets and outlets involved can be arranged in multiple groups.
  • the broken silicon materials involved in the present invention include not only the leftover materials in the process of silicon core preparation, accidentally broken silicon cores, and broken materials generated by multi-crystalline/single-crystalline silicon production enterprises in the reduction, cutting, grinding and polishing process stages, but also silicon materials in other shapes (such as cauliflower materials, silicon rods of shorter lengths, etc.), or directly purchasing new silicon materials and using the present invention to directly draw silicon cores.
  • this embodiment can not only be used for pulling silicon cores, but also can realize the pulling of other crystal materials.
  • a plurality of crystal cooling tubes are arranged between the upper flange and the lower flange, and a cooling medium channel is arranged on the periphery of the crystal cooling tube.
  • a low temperature zone is formed in the space above the crucible through the cooling medium, thereby forming a temperature gradient with high temperature at the bottom and low temperature at the top.
  • the temperature of the molten silicon liquid above the crucible can be reduced, and the viscosity of the silicon liquid can be increased, which is beneficial for the silicon liquid to crystallize following the seed crystal.
  • the silicon core can be cooled, thereby increasing the drawing speed of the silicon core.
  • a heat preservation plate is provided under the lower flange or the cooling plate, and the surface of the crystal cooling mechanism is insulated by the heat preservation plate, which effectively prevents volatiles from adhering to the bottom and side walls of the crystal cooling mechanism due to condensation. While preventing volatiles from adhering to the crystal cooling mechanism, this embodiment, due to the heat preservation effect of the heat preservation plate, avoids the cooling of the corresponding crucible area due to the low temperature under the crystal cooling mechanism, prevents the crystal cooling mechanism from taking away too much temperature, and plays a role in reducing heating energy consumption.
  • the cooling effect of the cooling medium in the crystal cooling mechanism is completely applied to the inner wall of the pulling hole on the crystal, thereby improving the cooling effect on the pulled crystal, achieving rapid crystallization of the crystal, and achieving the purpose of increasing the crystal pulling speed.
  • an artificial crystal preparation device which includes: a furnace body; a crucible arranged in the furnace body and arranged to be able to move up and down in the furnace body; a pulling device arranged above the crucible, which is arranged to be able to move up and down above the crucible, and a receiving portion is arranged at the end of the pulling device; and a crystal cooling device arranged above the crucible, the crystal cooling device is provided with a crystal pulled out of the crucible. At least one first pulling hole is provided through which the body passes, and the ends of the pulling device are respectively aligned with the first pulling holes.
  • FIG23 shows an artificial crystal preparation device according to an embodiment of the present application.
  • the artificial crystal preparation device includes: a furnace body 1001, an upper pulling mechanism 1002, a crystal cooling mechanism 1004, a heat preservation plate 1005, a crucible 1007 and a heater 1008.
  • the upper pulling mechanism 1002 corresponds to the pulling device of the present application
  • the crystal cooling mechanism 1004 is a specific example of the crystal pulling mechanism of the present application.
  • a heater 1008 is provided in the furnace body 1001, a heat preservation layer is provided between the inner wall of the furnace body 1001 and the outer edge surface of the heater 1008, a crucible 1007 which is fixed in position or can be raised and lowered is provided in the middle of the heater 1008, and a crystal cooling mechanism 1004 which is fixed in position or can be raised and lowered is provided above the crucible 1007.
  • the up and down lifting of the crucible 1007 or the up and down lifting of the crystal cooling mechanism 1004 can ensure that the distance between the lower surface of the crystal cooling mechanism 1004 and the liquid surface of the melt 1006 in the crucible 1007 tends to be constant.
  • a heat preservation plate 1005 is provided at the lower part of the crystal cooling mechanism 1004, and a plurality of crystal lower pulling holes 100501 corresponding to the crystal upper pulling holes 100401 on the crystal cooling mechanism 1004 are provided on the heat preservation plate 1005, wherein the crystal upper pulling hole is a specific example of the first pulling hole of the present application, and the crystal lower pulling hole is a specific example of the second pulling hole of the present application.
  • An upper pulling mechanism 1002 is provided above the crystal cooling mechanism 1004, and a receiving portion is provided at the end of the upper pulling mechanism 1002.
  • the lower ends of the seed crystals received in the receiving portion of the upper pulling mechanism 1002 are respectively aligned with the crystal upper pulling holes 100401 of the crystal cooling mechanism 1004.
  • the crystal upper pulling holes 100401 are a specific example of the first pulling hole of the present application. Multiple crystals can be pulled simultaneously through the cooling mechanism.
  • the present invention can achieve the following effects by providing the heat preservation board 1005:
  • the uniformity of the temperature of each crystal pulling hole 100401 on the crystal cooling mechanism 1004 can be better guaranteed (that is, the temperature of the inner circle crystal pulling holes 100401 and the outer circle crystal pulling holes 100401 on the crystal cooling mechanism 1004 can be adjusted, so as to achieve the temperature of the crystal pulling holes 100401 on the inner circle and the outer circle approaching isothermal).
  • the heat preservation plate 1005 is set to have at least one step that is concave upward to form a stepped surface, and the different step thicknesses can be used to weaken the cooling effect of the cooling mechanism 1004. That is, the temperature required for center drawing is high, and the thickness of the center part of the heat preservation plate 1005 is thick, so that its cooling effect on the melt 1006 can be weakened. On the contrary, the temperature required for outer drawing is low, and the thickness of the edge part of the heat preservation plate 1005 is thin, so that its cooling effect on the melt 1006 can be increased.
  • the inner and outer drawing conditions can be made similar, thereby ensuring the consistency of the crystallization of the inner and outer rings, thereby ensuring the consistency of the diameter of the crystals drawn in each ring.
  • the temperature of the crystallization area in the crucible can be made uniform, reducing or avoiding the undesired cooling of the crystallization area in the crucible caused by the cooling medium in the crystal cooling mechanism 1004 (the surface temperature of the crystal cooling mechanism 1004 is low, which can take away part of the heat, and the heat loss leads to a decrease in temperature).
  • the crucible 1007 in order to achieve a constant distance between the lower surface of the crystal cooling mechanism 1004 and the liquid level of the melt 1006 in the crucible 1007, preferably, the crucible 1007 is lifted up and down, and the crystal cooling mechanism 1004 is kept in a fixed position.
  • Lifting the crucible 1007 up and down is a conventional and commonly used technical solution in this field.
  • the lower end of the crucible 1007 can be set on a crucible support seat, and the lower end of the crucible support seat is connected to a lower shaft 1009 that can be lifted up and down, and the lifting and lowering of the lower shaft 1009 realizes the lifting and lowering of the crucible 1007.
  • This technical solution is not only simple in structure, but also can always ensure that the crystallization line of the crystal remains unchanged (that is, the liquid level of the melt 1006 is always in a fixed position of the heater).
  • the crystal cooling mechanism 1004 is lifted up and down, and the crucible 1007 is fixed, the crystal cooling mechanism 1004 is connected to the lifting mechanism to achieve the lifting function.
  • the lifting mechanism drives the crystal cooling mechanism 1004 to lift up and down. It should be noted that the lifting mechanism is a conventional technology in this field, and the specific structure is not described here.
  • the heater 1008 can also be set to a structure that can be lifted up and down. When the liquid level of the melt 1006 in the crucible 1007 drops, the heater 1008 also drops when the crystal cooling mechanism 1004 drops. This can also ensure that the crystal line of the crystal remains unchanged. Similarly, the lifting structure of the heater 1008 is also a conventional structure setting in the art, and will not be repeated here.
  • an upper through hole 100403 is provided in the middle of the upper part of the crystal cooling mechanism 1004, and a cavity 100402 is provided in the crystal cooling mechanism 1004.
  • Multiple groups of fixing columns are radially provided on the periphery of the upper through hole 100403, and each group of fixing columns includes at least two fixing columns.
  • the multiple groups of fixing columns can be arranged in a form that the fixing columns located on a concentric circle are one group; or the fixing columns extending outward along the same diameter are one group; each fixing column is provided with a crystal upper pulling hole 100401, and the cavity 100402 is connected to a water outlet pipe and a water inlet pipe respectively, and the water outlet pipe and the water inlet pipe are respectively connected to a cooling medium source.
  • multiple circles of crystal pulling holes 100401 are arranged in sequence from the outer edge to the inside on the crystal cooling mechanism 1004.
  • a stepped surface with at least one step concave upward is provided from the outside to the inside at the bottom of the crystal cooling mechanism 1004, and a circle of crystal pulling holes 100401 are provided on each step surface.
  • the specific structure of the crystal cooling mechanism 1004 may adopt the cooling device according to the second embodiment of the present application which will be described later.
  • the insulation board 1005 has a lower through hole 100503 in the middle, and multiple groups of crystal lower pulling holes 100501 are radially arranged around the lower through hole 100503.
  • the lower through hole 100503 and the crystal lower pulling holes 100501 correspond to the upper through hole 100403 and the crystal upper pulling holes 100401 on the crystal cooling mechanism 1004, respectively.
  • the heat preservation plate 1005 is a flat plate structure, and the outer dimensions of the heat preservation plate 1005 are greater than or equal to the outer dimensions of the crystal cooling mechanism 1004 .
  • the insulation board 1005 is a flat plate structure, and at least one step 100502 protruding upward is provided on the insulation board 1005 from the outside to the inside.
  • the step 100502 corresponds to the step surface at the bottom of the crystal cooling mechanism 1004.
  • the replacement structure of the insulation plate 1005 is a barrel-shaped structure in which the middle of the insulation plate 1005 is recessed downward to form a groove, and the inner edge surface of the groove and the outer edge surface of the crystal cooling mechanism 1004 are clearance fit or interference fit.
  • the heat preservation plate 1005 when configured as a barrel-shaped structure, at least one step 100502 protruding upward is provided on the heat preservation plate 1005 from the outside to the inside.
  • the step 100502 corresponds to the step surface at the bottom of the crystal cooling mechanism 1004.
  • a heat-insulating filler is provided in the gap.
  • the heat-insulating filler is any one of quartz felt, graphite felt or zirconium felt.
  • the barrel-shaped heat preservation plate 1005 can prevent volatiles from adhering and accumulating on the side wall of the crystal cooling mechanism 1004, and can also adjust the heat preservation effect of the side wall of the crystal cooling mechanism 1004.
  • the temperature of the crystal pulling hole 100401 on the outer ring of the crystal cooling mechanism 1004 is adjusted, and then the diameter of the pulled columnar crystal 1003 is adjusted.
  • the role of the heat preservation filler is also to adjust the heat preservation temperature by adjusting the thickness of the added heat preservation filler while playing the heat preservation role, and finally adjust the temperature of the crystal pulling hole 100401 on the outer ring of the crystal cooling mechanism 1004, and adjust the diameter of the pulled columnar crystal 1003.
  • the lower part of the crystal cooling mechanism 1004 is provided with a stepped surface with at least one step concave upward from the outside to the inside, and a heat preservation plate 1005 having the same shape as the stepped surface is provided below the stepped surface.
  • the provision of the stepped steps can better ensure the uniformity of the temperature of the crystal upper pulling hole 100401 on the crystal cooling mechanism 1004. Since the temperature distribution range of the crucible is that the peripheral temperature is higher than the central temperature, when pulling the crystal, the cooling range of the crystal cooling mechanism 1004 should also change accordingly, thereby ensuring the consistency of crystallization of the inner and outer rings.
  • the insulation board 1005 is a flat plate structure, and the outer dimensions of the insulation board 1005 are greater than or equal to the outer dimensions of the lower flange or cooling plate of the crystal cooling mechanism 1004. That is, according to a preferred embodiment of the present application, the outer dimensions of the insulation board 1005 are greater than the outer dimensions of the crystal cooling mechanism 1004, and the outer edge of the insulation board 1005 extends outward, which can reduce or prevent volatiles from adhering to the outer edge of the crystal cooling mechanism 1004, and can also play the role of a tray, so that the volatiles fall on the upper surface of the insulation board 1005 extending outward.
  • the outer dimensions of the insulation plate 1005 are equal to the outer dimensions of the crystal cooling mechanism 1004.
  • the insulation plate 1005 can be connected to the crystal cooling mechanism 1004 by bonding, fixing with pins or screws, or being hung under the crystal cooling mechanism 1004 by a connecting rod, etc.
  • the material of the insulation board 1005 can be graphite felt, graphite plate, carbon-carbon composite material plate, etc.
  • a heat preservation plate may be provided on the upper panel of the crystal cooling mechanism 1004 , that is, the entire outer surface of the crystal cooling mechanism 1004 may be covered with a layer of heat preservation material.
  • a lower through hole 100503 that is consistent with the through hole in the center of the crystal cooling mechanism 1004 can be set in the middle of the insulation board 1005, and multiple crystal lower pulling holes 100501 that correspond to the crystal upper pulling holes 100401 on the crystal cooling mechanism 1004 are set on the periphery of the lower through hole 100503.
  • the insulation board 1005 is then provided with at least one step of upwardly convex steps 100502 from the outside to the inside, and the step steps 100502 cooperate with the stepped surface on the crystal cooling mechanism 1004.
  • the specific structure is detailed in Figure 24.
  • the cooling medium involved in the present invention is cooling water or cooling oil or cooling gas such as liquid nitrogen.
  • the heat preservation plate 1005 is arranged above the crucible 1007 located in the furnace body 1001, and the bottom of the crystal cooling mechanism 1004 is close to the melt 1006 in the crucible 1007 but cannot contact it.
  • the upper pulling mechanism 1003 drives the seed crystal to descend.
  • the seed crystal passes through the upper pulling hole 100401 of the crystal and the lower pulling hole 100501 of the crystal and contacts the melt 1006, the seed crystal stops descending.
  • the seed crystal After the lower end of the seed crystal is melted, the seed crystal is slowly lifted, and at this time, the melt 1006 rises with the seed crystal.
  • the temperature here is lower than the temperature of the crucible 1007 because the cooling medium is introduced into the crystal cooling mechanism 1004, and the melt 1006 gradually crystallizes.
  • the crystallized melt enters the upper pulling hole 100401 of the crystal, the temperature gradually decreases to form the required columnar crystal 1003.
  • the cooling medium in the crystal cooling mechanism 1004 can forcefully cool the columnar crystal 1003 that has just been crystallized through the crystal upper pulling holes 100401.
  • the heat preservation plate 1005 provided on the crystal cooling mechanism 1004 can prevent volatiles from adhering to the surface of the crystal cooling mechanism 1004, and can also adjust the heat preservation (cooling effect) of each circle of the crystal upper pulling holes 100401, thereby adjusting the diameter of the columnar crystal 1003 pulled by the inner and outer circle crystal upper pulling holes 100401.
  • the outer shape of the stepped steps 100502 arranged on the insulation plate 1005 can be set to be circular, or can be formed into a plum blossom shape by setting an inwardly recessed arc between every two crystal lower pulling holes 100501 (the specific structure is shown in Figure 25), or can be formed into a flower shape by setting an outwardly protruding arc between every two crystal lower pulling holes 100501, or other various shapes.
  • cooling medium inlets and outlets involved can be arranged in multiple groups.
  • the present invention When the present invention is actually applied, it can not only be used for drawing silicon cores and silicon rods, but also can realize the drawing of other crystal materials.
  • a heat preservation plate is provided under the crystal cooling mechanism, so that the surface of the crystal cooling mechanism is insulated by the heat preservation plate, which effectively prevents volatiles from adhering to the lower surface and side walls of the crystal cooling mechanism due to condensation. While preventing volatiles from adhering to the crystal cooling mechanism, the heat preservation effect of the heat preservation plate prevents the cooling of the crucible area opposite to the lower surface of the crystal cooling mechanism caused by the low temperature, thereby preventing the crystal cooling mechanism from taking away too much temperature, thereby reducing the heating energy consumption, etc.
  • the cooling effect of the cooling medium in the crystal cooling mechanism is completely applied to the inner wall of the pulling hole on the crystal, thereby improving the cooling effect on the pulled crystal, realizing rapid crystallization of the crystal, and achieving the purpose of increasing the crystal pulling speed, etc.
  • the present application is mainly applied to a silicon core furnace for drawing silicon cores using broken silicon materials.

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Abstract

一种用于同时拉制多根晶体的晶体冷却装置及人工晶体制备设备。该晶体冷却装置设置有供拉制出来的晶体穿过的多个第一提拉孔以及对晶体进行冷却的冷却介质通道。能够较快的冷却拉制出来的晶体，并且能够同时拉制多根晶体，从而提高硅芯拉制速度。而且，能够使用碎硅料同时拉制多根硅芯，有效的避免了碎硅料的资源浪费。

Description

用于同时拉制多根晶体的晶体冷却装置及人工晶体制备设备
相关申请的引用
本申请要求于2022年03月21日向中华人民共和国国家知识产权局提交的第202210278020.X号中国专利申请、于2022年9月27日提交的第202211182774.1号中国专利申请、于2022年9月27日提交的第202211182775.6号中国专利申请的权益，在此将其全部内容以援引的方式整体并入本文中。
技术领域
本申请涉及人工晶体制备技术领域，具体涉及一种用于同时拉制多根晶体的晶体冷却装置及包含该晶体冷却装置的人工晶体制备设备。
背景技术
在“碳达峰、碳中和”的国家宏观战略政策的推动下，光伏产业正在成为新能源行业的“新宠”。
在此背景下，随着光伏行业的发展，全球对多/单晶硅的需求增长迅猛，市场供不应求。受此影响，作为太阳能电池主要原料的多/单晶硅价格快速上涨，国内很多企业均在扩产。
以多/单晶硅为例，多/单晶硅在整个生产过程中，硅芯的使用量非常大。现有的硅芯大多是通过区熔的方式制备获得的(主要通过高频线圈、籽晶夹头来完成拉制过程)。其工作原理如下：工作时通过给高频线圈通入高频电流，高频感应加热，使高频线圈产生电流对原料棒产生磁力线；加热后的原料棒上端头形成熔化区，然后将籽晶插入熔化区；当籽晶的端头与原料棒的融区融为一体后，慢慢提升籽晶，熔化后的原料融液就会跟随籽晶上升，形成一个新的柱形晶体。这个新的柱形晶体便是硅芯的制成品。
多/单晶硅生产企业在实际生产过程中发现，对于硅芯制备过程中出现的余料、不小心折断的硅芯、在还原、切割、磨抛等工艺阶段产生的碎料等的处理非常繁琐。很多企业为了图省事，直接将上述余料、断芯、碎料丢弃或者长期堆放在仓库中。还有一些企业将上述碎料进行回收，通过直拉炉拉制成硅棒，然后使用硅棒再拉制成硅芯。这样不仅增加了硅芯拉制的成本，还造成了较大的资源浪费等。也有一些企业将上述碎料进行回收，通过直拉炉拉制成硅棒，然后通过多线切割机将硅棒切成多根尺寸为8mm*8mm或10mm*10mm的柱状硅棒，这样不仅增加了柱状硅棒的生产成本，在切割过程中还可能引入更多的杂质，在降低产品质量的同时，还造成了较大的资源浪费等。那么如何将碎硅料进行再利用就成了本领域技术人员的长期技术诉求之一。
采用直拉法拉制硅棒的技术已经非常成熟，并在人工晶体制备领域得到了广泛的应用。但是现有直拉法在拉制硅棒时，只能在坩埚的中心拉制一根硅棒，例如专利号为201320678696.4，申请日为2013年10月30日，公告号为CN203639604U，专利名称为一种软轴提拉型单晶炉的中国实用新型中公开的技术；以及专利号为202011063763.2，申请日为2020年9月30日，公告号为CN112176400A，专利名称为一种直拉法单晶炉及其熔体温度梯度控制方法的中国发明专利中公开的技术。上述两专利公开的技术方案均是采用直拉法拉制硅棒的技术方案，但上述两技术方案只能实现一根硅棒的同时拉制，无法实现多根硅棒的同时拉制。
另外，发明人通过检索发现了专利号为200910064106.7，申请日为2009年1月20日，专利名称为一种晶体碎料拉制硅芯及实施该方法的一种装置的中国发明专利。该专利中给出了一种使用晶体碎料拉制硅芯的装置及方法。该专利虽说可以利用碎硅料拉制硅芯，但拉制出的硅芯因冷却速度慢，进而导致硅芯的椭圆度稍大及拉制效率低等。因此，如何提供一种能够具有较快的冷却速度的用于人工晶体炉的晶体冷却装置就成了本领域技术人员的长期技术诉求之一。
发明内容
为了解决上述问题，本申请提供一种用于同时拉制多根晶体的晶体冷却装置，其能够较快的冷却拉制出来的晶体，并且能够同时拉制多根晶体，从而提高硅芯拉制速度。而且，根据本申请的晶体冷却装置能够使用碎硅料同时拉制多根硅芯，有效的避免了碎硅料的资源浪费。
根据本申请的一方面，提供一种用于同时拉制多根晶体的晶体冷却装置，晶体冷却装置设置有供拉制出来的晶体穿过的多个第一提拉孔以及对晶体进行冷却的冷却介质通道。
优选地，所述晶体冷却装置包括上法兰和下法兰以及设置在所述上法兰和所述下法兰之间的晶体冷却管，所述晶体冷却管的一端连接所述上法兰，所述晶体冷却管的另一端连接所述下法兰，所述晶体冷却管形成所述第一提拉孔，并且所述冷却介质通道设置在所述晶体冷却管的外围。
优选地，在所述上法兰或所述下法兰上设置有对所述晶体进行冷却的冷却介质进出的出水口和进水口。
优选地，所述上法兰上设置有贯通所述上法兰的晶体上穿孔，所述晶体上穿孔与所述第一提拉孔对应设置。
优选地，所述上法兰的下表面设有向上凹陷的凹槽，或者在上法兰的上表面设有向下凹陷的凹槽，在所述凹槽的开口端设有下盖板，所述下盖板与所述凹槽形成进水腔，在所述凹槽的槽底设有贯通所述上法兰的晶体上穿孔，所述晶体上穿孔与所述第一提拉孔对应设置，在所述下盖板上设有多个穿孔。
优选地，所述上法兰的上下两面分别设有上凹槽和下凹槽，在所述上凹槽和所述下凹槽的开口端分别设有进水腔盖板和回水腔盖板，所述进水腔盖板与所述上凹槽形成进水腔，所述回水腔盖板与所述下凹槽形成回水腔，在所述进水腔盖板上分别设有贯通至所述下凹槽槽底的晶体上穿孔、出水口和进水口，所述晶体上穿孔与所述第一提拉孔对应设置，在所述上凹槽的槽底设有贯通至所述下凹槽槽底的进水孔，所述进水腔与所述进水口连通，所述回水腔与所述出水口连通，在回水腔盖板上设有多个穿孔。
优选地，所述上法兰包括上圆盘、中圆盘和下圆盘，所述上圆盘、中圆盘和下圆盘叠放设置形成法兰盘体，在所述法兰盘体上表面的中心部位设有贯通所述法兰盘体的中部孔，在所述法兰盘体的上部设有中空的回水腔，在所述法兰盘体的下部设有中空的进水腔，在所述法兰盘体的上表面设有贯通至所述进水腔的连接管，所述连接管形成进水口，在所述法兰盘体的上表面设有贯通至所述回水腔的出水口，在所述法兰盘体的下表面设有贯通至所述回水腔的回水过渡管，在所述中部孔外围的法兰盘体上表面设有贯通所述法兰盘体的晶体上穿孔，所述晶体上穿孔与所述第一提拉孔对应设置。
优选地，所述法兰盘体的下表面设有过渡环，所述过渡环的中部设有中部孔，在所述过渡环上表面分别设有晶体上穿孔、出水开口和回水开口。
优选地，所述下法兰上设置有贯通所述下法兰的晶体下穿孔，所述晶体下穿孔与所述第一提拉孔对应设置。
优选地，所述下法兰的上面设有向下凹陷的凹槽，在所述凹槽的开口端设有上盖板，所述凹槽与所述上盖板形成集水腔，在所述凹槽的槽底设有贯通至所述下法兰下面的晶体下穿孔，所述晶体下穿孔与所述第一提拉孔对应设置，在所述上盖板上设有多个穿孔。
优选地，所述下法兰的下方设置有冷却盘，所述冷却盘中设置有空腔，并且，所述冷却盘上设置有与所述晶体下穿孔对应设置的晶体提拉孔以及分别与所述空腔连通的出水孔和进水孔。
优选地，在所述上法兰与所述下法兰之间设置连接筒，所述晶体冷却管设置在所述连接筒内，所述晶体冷却管的一端连接到设置在所述上法兰上的晶体上穿孔，所述晶体冷却管的另一端连接到设置在所述下法兰上的晶体下穿孔，所述连接筒的内缘面与所述上法兰下端面、所述下法兰上端面之间的空腔形成所述冷却介质通道。
优选地，在所述晶体冷却管的外围套接套管，所述套管的一端连通设置在所述上法兰中的进水腔，所述套管的另一端连通设置在所述下法兰中的集水腔，所述套管的内缘面与所述晶体冷却管的外缘面之间的冷却腔、所述进水腔和所述集水腔形成所述冷却介质通道。
优选地，在所述晶体冷却管的外围套接套管在所述套管的上端设有向下凹陷的半圆台阶，所述套管的上端连通设置在所述上法兰上的进水腔，所述半圆台阶的上端连通设置在所述上法兰下部的回水腔，所述套管的下端连通设置在所述下法兰上部的集水腔或连接所述下法兰，所述套管的内缘面与所述晶体冷却管的外缘面之间的冷却腔、所述进水腔、所述回水腔和所述集水腔形成所述冷却介质通道。
优选地，所述晶体冷却管与所述套管之间的所述冷却腔内设有隔板。
优选地，所述晶体冷却装置设置有多个所述晶体冷却管，所述晶体冷却装置的中间设置一个所述晶体冷却管，在中间的所述晶体冷却管的外围呈放射状设有多组晶体冷却管，每组晶体冷却管包括至少两个所述晶体冷却管；或者在所述晶体冷却装置的中间设置中部孔，在所述中部孔的外围呈放射状设有多组晶体冷却管，每组晶体冷却管包括至少两个所述晶体冷却管。
优选地，在所述法兰盘体与所述下法兰之间分别设置连接筒和内侧连接筒，所述晶体冷却管设置在所述连接筒与所述内侧连接筒之间的空腔内，所述晶体冷却管的上端连接到设置在所述法兰盘体上的晶体上穿孔，所述晶体冷却管的下端连接到设置在所述下法兰上的晶体下穿孔，所述连接筒的内缘面与所述上法兰下端面、所述下法兰上端面、所述内侧连接筒的外缘面之间的空腔形成所述冷却介质通道。
优选地，在所述连接筒上设置有供对所述晶体进行冷却的冷却介质进出的出水口和进水口。
优选地，所述下法兰的下方设置有冷却盘，所述冷却盘中设置有空腔，并且，所述冷却盘上设置有与所述晶体下穿孔对应设置的晶体提拉孔以及分别与所述空腔连通的出水孔和进水孔，所述进水孔连接进水管的下端头，所述进水管的上端头穿过所述下法兰连接所述法兰盘体下面的出水口，所述出水孔连接出水管的下端头，所述出水管的上端头穿过所述下法兰连通所述法兰盘体上的冷却介质通道。
优选地，所述晶体冷却装置还包括设置在所述下法兰下面的保温板，所述保温板上设置有至少一个第二提拉孔，所述第二提拉孔设置成与所述下法兰上的所述晶体下穿孔一一对应。
优选地，所述晶体冷却装置还包括设置在所述冷却盘下面的保温板，所述保温板上设置有至少一个第二提拉孔，所述第二提拉孔设置成与所述冷却盘上所述晶体提拉孔一一对应。
优选地，所述保温板的中部设有中心孔，所述第二提拉孔在所述中心孔的外围呈放射状设置。
优选地，所述保温板的外形尺寸大于或等于所述下法兰或所述冷却盘的外形尺寸。
优选地，在所述保温板的上表面由外向内设有向上凸起的阶梯台阶，所述阶梯台阶与所述下法兰或所述冷却盘下表面的阶梯面对应配合。
优选地，所述保温板设置为在中部设置向下凹陷的凹槽而形成桶型结构，所述凹槽的内缘面与所述下法兰或所述冷却盘的外缘面为间隙配合或过盈配合。
优选地，所述凹槽的内缘面与所述下法兰或所述冷却盘的外缘面为间隙配合时，在所述间隙处设有保温填充物。
优选地，所述冷却盘上面的中部设有上穿孔，在所述冷却盘内设有空腔，在所述上穿孔外围呈放射状设有多个所述晶体提拉孔。
优选地，所述下法兰或所述冷却盘的下表面由外向内设有向上凹陷的台阶而形成的阶梯面，在每级阶梯面上分别设置一圈所述晶体提拉孔。
根据本申请的另一方面，提供一种人工晶体制备设备，所述设备包括上述的晶体冷却装置。
根据本申请，通过在上法兰与下法兰之间设有多个晶体冷却管，在晶体冷却管的外围设置冷却介质通道，使得能够利用冷却介质在坩埚上方的空间形成低温区，从而形成下高上低的温度梯度，实现了降低坩埚上方熔融硅液的温度，增加硅液的粘稠度，利于硅液跟随籽晶结晶。最重要的是，可以对硅芯进行冷却，进而提高硅芯的拉制速度。根据本申请，在提高硅芯拉制速度的同时，还实现了多根硅芯的同时拉制等。本申请用于碎硅料同时拉制多根硅芯的装置时，有效的避免了碎硅料的资源浪费等。
并且，根据本申请，在晶体冷却机构，例如，下法兰或冷却盘，的下面设有保温板，通过保温板对晶体冷却机构的表面进行保温，有效的避免了挥发物因冷凝现象附着在晶体冷却机构的下面和侧壁上。本申请在实现避免挥发物粘附在晶体冷却机构上的同时，由于保温板的保温作用，避免了因晶体冷却机构下面的低温对其对应坩埚区域的降温，防止晶体冷却机构带走过多的温度，起到了降低加热能耗的作用等。同时，由于保温板的保温作用，使晶体冷却机构内冷却介质的冷却效果完全作用在晶体上提拉孔内孔壁上，进而提高对拉制晶体的冷却效果，实现晶体的快速结晶，起到了提高晶体拉制速度的目的等。
附图说明
图1是根据本申请第一实施例的冷却装置的立体结构；
图2是根据本申请第一实施例的冷却装置的局部立体结构示意图；
图3是根据本申请第一实施例的冷却装置的上法兰的结构示意图；
图4是根据本申请第一实施例的冷却装置的下法兰的结构示意图；
图5是根据本申请第一实施例的冷却装置的冷却介质通道的第二结构示意图；
图6是根据本申请第一实施例的冷却装置的冷却介质通道的第三结构示意图；
图7是根据本申请第一实施例的冷却装置的冷却介质通道的第四结构示意图；
图8是根据本申请第一实施例的套管的结构示意图；
图9是根据本申请第一实施例的冷却盘与冷却装置相连接的第一结构示意图；
图10是根据本申请第一实施例的冷却盘与冷却装置相连接的第二结构示意图；
图11是根据本申请第一实施例的冷却盘与冷却装置相连接的第三结构示意图；
图12是根据本申请第一实施例的隔板的结构示意图；
图13是根据本申请第一实施例的冷却盘与冷却装置相连接的第四结构示意图；
图14是图13所示的冷却盘的具体立体结构示意图；
图15是根据本申请第二实施例的设有保温板的冷却装置的立体结构示意图；
图16是根据本申请第二实施例的设有保温板的冷却装置的局部立体结构示意图；
图17是根据本申请第二实施例的装置的上法兰的结构示意图；
图18是根据本申请第二实施例的装置的下法兰的结构示意图；
图19是根据本申请第二实施例的保温板的第一替换结构示意图；
图20是根据本申请第一实施例的保温板的第二替换结构示意图；
图21是根据本申请第一实施例的保温板的第三替换结构示意图；
图22是根据本申请第一实施例的保温板的第四替换结构示意图；
图23是根据本申请第一、二实施例的具体应用示意图；
图24是根据本申请第二实施例的保温板的第五替换结构示意图；
图25是根据本申请第二实施例的保温板上阶梯台阶的结构示意图；
图26是图7的替换结构示意图。
具体实施方式
下面通过实施例对本申请进行详细描述，但并不意味着存在对本申请而言任何不利的限制。本文已经详细地描述了本申请，其中也公开了其具体实施例方式，对本领域的技术人员而言，在不脱离本申请精神和范围的情况下针对本申请具体实施方式进行各种变化和改进将是显而易见的。
在本发明的描述中，需要理解的是，术语“中心”、“侧向”、“长度”、“宽度”、“高度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“侧”等指示的方位或位置关系为基于附图1所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的设备或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的描述中，还需要说明的是，除非另有明确的规定和限定，术语“设置”、“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
本申请提供一种用于同时拉制多根晶体的晶体冷却装置，该晶体冷却装置设置有供拉制出来的晶体穿过的多个第一提拉孔以及对晶体进行冷却的冷却介质通道。
根据本申请的晶体冷却装置能够较快的冷却拉制出来的晶体，并且能够同时拉制多根晶体，提高了硅芯拉制速度。
下面，将根据附图及各实施例详细说明本申请优选实施例的具体结构。
第一实施例
附图1至图14示出一种用于人工晶体炉的晶体冷却装置，该晶体冷却装置为本申请的晶体拉制机构的一个具体示例。该晶体冷却装置包括上法兰2003、下法兰2005、晶体冷却管2007和冷却介质通道。上法兰2003连接晶体冷却装置升降机构。在上法兰2003与下法兰2005之间设有多个用于冷却晶体的晶体冷却管2007，晶体冷却管2007中形成有供晶棒穿过的第一提拉孔。实施时，多个晶体冷却管2007的设置形式为中间设置一个晶体冷却管2007，然后在中部晶体冷却管2007的外围呈放射状设有多组晶体冷却管2007。每组晶体冷却管2007包括至少两个晶体冷却管2007，实施时，多组晶体冷却管2007的设置形式可以为位于一个同心圆上的晶体冷却管2007为一组；也可以是延着同一条直径向外的晶体冷却管2007为一组；晶体冷却管2007的设置数量具体根据所拉制晶体的数量进行选择。在晶体冷却管2007的外围设有冷却介质通道，冷却介质通道内通入用于降温的冷却介质，冷却介质通道的进口通过管道连接冷却源，冷却介质通道的出口通过管道连接冷却介质回收机构，从而形成所述的用于人工晶体炉的晶体冷却装置。
进一步，如图13所示，实施时，也可以采用连接筒2004与内侧连接筒20031形成冷却介质通道，冷却管2007置于其中，对整体进行冷却。具体方案的描述见下文所述。
进一步，如图9至图14所示，下法兰2005的下方可以设有冷却盘20025。在冷却盘20025的内部设有空腔20024，在空腔20024内设有多个固定柱20026，在每个固定柱20026上分别设有晶体提拉孔20027，空腔20024分别连通出水管20023和进水管20028。出水管20023和进水管20028连通冷却介质通道。
实施时，如图9所示，进水管20028的上端连接上法兰2003上的进水腔20011，出水管20023的上端连通下法兰2005上的集水腔20016；或者如图10所示，进水管20028的上端连接上法兰2003上的进水腔20011，出水管20023的上端连通上法兰2003上的回水腔20020。
可替代地，如图11所示，下法兰2005的下方设有冷却盘20025，在冷却盘20025的内部设有空腔20024，在空腔20024内设有多个固定柱20026，在每个固定柱20026上分别设有晶体提拉孔20027，空腔20024分别连通出水管20023和进水管20028，出水管20023和进水管20028分别穿过下法兰2005连通至由下法兰2005、连接筒2004和上法兰2003组成的冷却介质通道。或者，出水管20023和进水管20028连通至设置在下法兰2005上的进水分口和出水分口。
实施时，出水管20023和进水管20028的上端头还可以穿过下法兰2005后直接连通设置在上法兰2003的出水口2002和进水口2006，即将冷却盘20025形成单独的冷却回路。此时，上法兰2003上的出水口2002和进水口2006可以设置为多个，即通过多个出水口2002和进水口2006分别给冷却盘20025和晶体冷却管2007进行冷却。
或者，出水管20023或进水管20028的上端头连通至出水口2002或进水口2006，进水管20028或出水管20023的上端头连通至由下法兰2005、连接筒2004和上法兰2003组成的冷却介质通道，即实现独立进总体出或实现总体进独立出的形式。也就是说，出水管20023和进水管20028具体与哪个部件连接可以根据冷却介质通道的结构形式而灵活地设置。
实施时，在下法兰2005的下方设置冷却盘20025，下法兰2005上每个晶体冷却管2007的内孔分别与冷却盘20025上每个晶体提拉孔20027对应且同心设置。这样可以保证晶棒顺利穿过晶体提拉孔20027与晶体冷却管2007，同时操作者可以通过下法兰2005与冷却盘20025之间的空隙观察晶体的拉制情况。
使用时，当籽晶带动熔液进入冷却盘20025上的晶体提拉孔20027后，随着温度的降低籽晶会开始结晶形成新的晶棒。当晶棒穿过晶体提拉孔20027后进入晶体冷却管2007，晶体冷却管2007对晶棒进行再次冷却，以形成所需的晶棒。此时操作者可以通过下法兰2005与冷却盘20025之间的空隙观察晶棒的拉制情况。晶体冷却管2007不仅可以对晶棒进行冷却(因冷却介质通道内的冷却介质对晶体冷却管2007进行冷却，从而形成晶体生长所需的温度梯度区域)，同时还可以起到晶棒导向的作用，保证晶棒的下端头不会发生晃动(需要说明的是，当晶棒拉制到一定长度后，如果上端发生轻微的晃动，那么传递到晶棒的下端，晃动的幅度就会成倍或成十几倍的增加，进而影响晶棒的拉制，目前晶棒的拉制长度一般为2m至3m左右)。
如图1至图4所示，冷却介质通道设置的第一结构为在上法兰2003与下法兰2005之间设置连接筒2004。实施时，可以在上法兰2003的下面设置下环形定位台阶2008，在下法兰2005的上面设置上环形定位台阶20010，然后将连接筒2004的上下两端分别套接在下环形定位台阶2008和上环形定位台阶20010上，然后通过焊接的形式将连接筒2004焊接在上法兰2003与下法兰2005上。在连接筒2004内设有多个晶体冷却管2007。每个晶体冷却管2007的上端分别连接设置在上法兰2003上的晶体上穿孔2001，每个晶体冷却管2007的下端分别连接设置在下法兰2005上的晶体下穿孔2009。由连接筒2004的内缘面与上法兰2003下端面、下法兰2005上端面之间的空腔形成冷却介质通道。在上法兰2003上分别设有出水口2002和进水口2006，出水口2002和进水口2006分别形成冷却介质通道的进口和出口。
根据本申请一优选实施方式，上法兰2003的结构为上法兰2003为实心结构，上法兰2003设置有一个出水口2002和一个进水口2006以及从上表面贯通至下表面的多个晶体上穿孔2001。
根据本申请另一优选实施方式，下法兰2005的结构为下法兰2005为实心结构，下法兰2005设置有多个从上表面贯通至下表面的晶体下穿孔2009。
使用时，冷却介质通过进水口2006进入到由上法兰2003、连接筒2004和下法兰2005组成的冷却介质通道内。当整个冷却介质通道内充满冷却介质后，冷却介质从出水口2002流出，进而实现对每个晶体冷却管2007内的晶棒进行冷却的目的。
根据本申请一实施方式，如图5所示，冷却介质通道设置的第二结构为在每个晶体冷却管2007的外围分别套接套管20013。每个套管20013的上端头分别连通设置在上法兰2003中部的进水腔20011，每个套管20013的下端头分别连通设置在下法兰2005中部的集水腔20016。由套管20013的内缘面与晶体冷却管2007的外缘面之间的冷却腔20012、进水腔20011和集水腔20016形成冷却介质通道。进水腔20011连通至进水口2006，集水腔20016通过回水管20014连接至出水口2002。出水口2002和进水口2006分别形成冷却介质通道的进口和出口。
实施时，当在每个晶体冷却管2007的外围分别套接套管20013时，套管20013的横截面形状可以如图8所示的圆形；或者套管20013的横截面形状也可以设置为由两个半圆形围成一个完整的圆形；或者套管20013的横截面形状也可以设置为由多个弧形围成一个完整的圆形；或者套管20013的横截面形状也可 以设置为由两个半椭圆形围成一个完整的椭圆形；当套管20013的横截面形状设置为椭圆形时，椭圆形的短轴的两侧壁可以与晶体冷却管2007的外缘面之间设置间隙，或者椭圆形的短轴的两侧壁与晶体冷却管2007的外缘面之间不留间隙，也就是椭圆形的短轴的两侧壁与晶体冷却管2007的外缘面贴合，椭圆形的长轴的两侧壁与晶体冷却管2007的外缘面之间设置间隙，由间隙形成冷却介质通道。当套管20013的横截面形状设置为椭圆形时可以实现如下两个有益效果：
1、当沿同一圆周排列套管20013时，由于椭圆形套管20013的短轴小于圆形套管20013的直径，可以实现在同一圆周处排列更多的套管20013，从而可以实现更多根数晶体的同时拉制(排布时，椭圆形套管20013的长轴朝向圆周的径向)；
2、设置椭圆形套管20013时，在不设置隔板20029的情况下，椭圆形套管20013套接在晶体冷却管2007上后也可以起到与在圆形套管20013与晶体冷却管2007之间设置隔板20029的技术效果。
实施时，上法兰2003的结构为在上法兰2003的下表面设有向上凹陷的凹槽，或者在上法兰2003的上表面设有向下凹陷的凹槽，在凹槽的开口端设有下盖板20017。下盖板20017与凹槽形成的空腔(即，被下盖板20017封闭在凹槽内的空腔)为进水腔20011，在凹槽的槽底分别设有多个贯通至上法兰2003上表面的晶体冷却管穿孔、出水口2002和进水口2006。在下盖板20017上设有多个套管穿孔及回水管穿孔。
下法兰2005的结构为在下法兰2005的上表面设有向下凹陷的凹槽，在凹槽的开口端设有上盖板20015，在凹槽的槽底设有多个贯通至下法兰2005下表面的晶体冷却管穿孔。在上盖板20015上设有多个套管穿孔。
使用时，冷却介质通过进水口2006进入上法兰2003内的进水腔20011，然后经进水腔20011将冷却介质分流到每个冷却腔20012内。然后，冷却介质流过冷却腔20012后进入下法兰2005内的集水腔20016内。最后，冷却介质经集水腔20016进入回水管20014，接着经回水管20014进入出水口2002。
根据本申请又一实施方式，如图6和图8所示，冷却介质通道设置的第三结构为在每个晶体冷却管2007的外围分别套接套管20013。在每个套管20013的上端头分别设有向下凹陷的半圆台阶20022，每个套管20013的上端头分别连通设置在上法兰2003上部的进水腔20011，每个半圆台阶20022的上端头分别连通至设置在上法兰2003下部的回水腔20020。每个套管20013的下端头分别连通至设置在下法兰2005上部的集水腔20016。由套管20013的内缘面与晶体冷却管2007的外缘面之间的冷却腔20012、进水腔20011、回水腔20020和集水腔20016形成冷却介质通道。进水腔20011连通至进水口2006，回水腔20020通过连接管20019连接至出水口2002。出水口2002和进水口2006分别形成冷却介质通道的进口和出口。
实施时，上法兰2003的结构为在上法兰2003的上下两面分别设有上凹槽和下凹槽，在上凹槽和下凹槽的开口端分别设有进水腔盖板20018和回水腔盖板20021。进水腔盖板20018与上凹槽形成的空腔为进水腔20011，回水腔盖板20021与下凹槽形成的空腔为回水腔20020。在进水腔盖板20018上分别设有多个贯通至下凹槽槽底的晶体冷却管穿孔、出水口2002和进水口2006。在回水腔盖板20021上设有多个套管穿孔及回水管穿孔。在上凹槽的槽底设有贯通至下凹槽槽底的半圆形进水孔。回水腔20020通过连接管20019连通出水口2002。下法兰2005的结构为在下法兰2005的上表面设有向下凹陷的凹槽，在凹槽的开口端设有上盖板20015，在凹槽的槽底设有多个贯通至下法兰2005下面的晶体冷却管穿孔，在上盖板20015上设有多个套管穿孔。
实施时，为了提高冷却效果，可以在晶体冷却管2007与套管20013之间的冷却腔20012内设置隔板20029，具体如图12所示。通过隔板20029将冷却腔20012分为进水腔体和出水腔体，即将冷却介质引流到晶体冷却管2007的下端。使用时，冷却介质通过进水口2006进入进水腔20011，然后经进水腔20011将冷却介质分流到每个冷却腔20012内的进水腔体，冷却介质流过冷却腔20012的进水腔体后进入集水腔20016内，然后经由集水腔20016进入每个冷却腔20012的出水腔体，最后经由出水腔体进入回水腔20020。回水腔20020内的冷却介质经连接管20019进入出水口2002。
根据本申请再一实施方式，如图7和图8所示，冷却介质通道设置的第四结构为在每个晶体冷却管2007的外围分别套接套管20013。在每个套管20013的上端头分别设有向下凹陷的半圆台阶20022。每个套管20013的上端头分别连通至设置在上法兰2003上部的进水腔20011，每个半圆台阶20022的上端头分别连通设置在上法兰2003下部的回水腔20020。每个套管20013的下端头分别连接至下法兰2005。由套管20013的内缘面与晶体冷却管2007的外缘面之间的冷却腔20012、进水腔20011和回水腔20020形成冷却介质通道。进水腔20011连通进水口2006，回水腔20020通过连接管20019连接出水口2002，出水口2002和进水口2006分别形成冷却介质通道的进口和出口。
如图6和7以及9和10所示，上法兰2003的第三结构为在上法兰2003的上下两面分别设有上凹槽和下凹槽，在上凹槽和下凹槽的开口端分别设有进水腔盖板20018和回水腔盖板20021，进水腔盖板20018与上凹槽形成的空腔为进水腔20011，回水腔盖板20021与下凹槽形成的空腔为回水腔20020。在进水腔 盖板20018上分别设有多个贯通至下凹槽槽底的晶体冷却管穿孔、出水口2002和进水口2006。在回水腔盖板20021上设有多个套管穿孔及回水管穿孔。在上凹槽的槽底设有贯通至下凹槽槽底的半圆形进水孔。回水腔20020通过连接管20019连通出水口2002。
下法兰2005的结构为下法兰2005为实心结构，在下法兰2005的上面设有多个贯通至下法兰2005下面的晶体下穿孔2009。
可替换地，实施时，图7中示出的下法兰2005可以替换为图26中的管口封堵环20037同样可以实现本发明的目的。
如图26中所示，上法兰2003的结构与图7中上法兰2003的结构一致，即在上法兰2003的上下两面分别设有上凹槽和下凹槽，在上凹槽和下凹槽的开口端分别设有进水腔盖板20018和回水腔盖板20021。进水腔盖板20018与上凹槽形成的空腔为进水腔20011，回水腔盖板20021与下凹槽形成的空腔为回水腔20020。在进水腔盖板20018上分别设有多个贯通至下凹槽槽底的晶体冷却管穿孔、出水口2002和进水口2006。在回水腔盖板20021上设有多个套管穿孔及回水管穿孔。在上凹槽的槽底设有贯通至下凹槽槽底的半圆形进水孔。回水腔20020通过连接管20019连通出水口2002。晶体冷却管2007的上端头依次穿过回水腔盖板20021、回水腔20020、进水腔20011后连通进水腔盖板20018上的套管穿孔。在晶体冷却管2007的外缘面套接套管20013，晶体冷却管2007的外缘面与套管20013的内缘面之间为间隔设置。由晶体冷却管2007的外缘面与套管20013的内缘面之间的空腔形成独立的一路冷却介质通道。在晶体冷却管2007下端头的外缘面与套管20013下端头的内缘面之间分别设置管口封堵环20037(管口封堵环20037的作用相当于图7中下法兰2005的作用)。
实施时，图26中上法兰2003的外形设置为环形结构，即上法兰2003的中部设置贯通的中部孔，在上法兰2003上设置至少一圈套管穿孔，套管穿孔分别连接晶体冷却管2007。实施时，为了提高套管20013的稳定性，可以在套管20013的外缘面设置套管支撑环20035。进一步，还可以在独立的一路冷却介质通道的下端头设置晶体观察孔20036，通过晶体观察孔20036观察晶体的拉制情况。实施时，设置晶体观察孔20036时应保证独立的一路冷却介质通道的密闭性，比如可以采用封堵板将晶体冷却管2007与套管20013上的开孔封堵，使晶体冷却管2007与套管20013之间的空腔形成一个密闭的腔体。
实施时，为了提高冷却效果，可以在晶体冷却管2007与套管20013之间的冷却腔20012内设置隔板20029，具体如图12所示。通过隔板20029将冷却腔20012分为进水腔体和出水腔体，进水腔体和出水腔体的下端连通形成一个循环的通道。使用时，冷却介质通过进水口2006进入进水腔20011，然后经进水腔20011将冷却介质分流到每个冷却腔20012内的进水腔体。冷却介质流过冷却腔20012的进水腔体后进入冷却腔20012内的出水腔体，然后经出水腔体进入回水腔20020。回水腔20020内的冷却介质经连接管20019进入出水口2002。
本发明在具体实施时，上法兰2003上的设置的进水口2006可以设置为一个，也可以设置为多个。当设置为一个时，需要分别为冷却盘20025和冷却介质通道提供冷却介质时，可以将上法兰2003设置为如图5所示的结构，这样可以通过进水腔20011将冷却介质分流到冷却盘20025和冷却介质通道。
另外，优选地，如图13、14所示，实施时，上法兰2003包括上圆盘、中圆盘和下圆盘。上圆盘、中圆盘和下圆盘叠放设置形成法兰盘体。在法兰盘体上面的中心部位设有贯通法兰盘体的中部孔20034，在法兰盘体的上部设有中空的回水腔20020，在法兰盘体的下部设有中空的进水腔20011。在法兰盘体的上面设有贯通至进水腔20011的连接管20019，连接管20019形成进水口2006。在法兰盘体的上面设有贯通至回水腔20020的出水口2002，在法兰盘体的下面设有贯通至回水腔20020的回水过渡管20030。在中部孔20034外围的法兰盘体上面设有贯通法兰盘体的晶体上穿孔2001，晶体上穿孔2001与第一提拉孔对应设置。在法兰盘体的下面设有贯通至进水腔20011的出水口，出水口连通冷却介质通道的进水口，冷却介质通道的出水口连通回水过渡管20030。
进一步，在实施时，可以在法兰盘体的下面设有过渡环20033，过渡环20033的中部设有中部孔20034。在过渡环20033上面分别设有晶体上穿孔2001、出水口和回水口。实施时，过渡环20033的上面可以通过螺栓与法兰盘体连接，过渡环20033的下面与连接筒2004和内侧连接筒20031固连，可以避免连接筒2004和内侧连接筒20031与法兰盘体直接连接，实现了法兰盘体与连接筒2004和内侧连接筒20031为活动连接。当法兰盘体或连接筒2004和内侧连接筒20031发生故障需要更换时，可以实现单独更换等。为了提高冷却介质的密封性，在出水口和回水口处分别设置密封环。实施时，密封环可以设置在过渡环20033上，也可以设置在法兰盘体上。
进一步，在实施时，在法兰盘体与下法兰2005之间分别设置连接筒2004和内侧连接筒20031。晶体冷却管2007设置在连接筒2004与内侧连接筒20031之间的空腔内，晶体冷却管2007的上端连接到设置在法兰盘体上的晶体上穿孔2001，晶体冷却管2007的下端连接到设置在下法兰2005上的晶体下穿孔2009。连接筒2004的内缘面与上法兰2003下端面、下法兰2005上端面、内侧连接筒20031的外缘面之间的空 腔形成冷却介质通道。出水口2002和进水口2006分别形成冷却介质通道的进口和出口。
进一步，在实施时，为了使冷却介质通道内的冷却介质流动顺畅，起到更好的冷却效果，在冷却介质通道内设置导流板20032。通过导流板20032的设置，可以迫使冷却介质按照预定的方向流动，进而起到较为均匀的冷却效果。
进一步，下法兰2005的下方设置有冷却盘20025。冷却盘20025中设置有空腔20024，并且，冷却盘20025上设置有与晶体下穿孔2009对应设置的晶体提拉孔20027以及分别与空腔20024连通的出水孔和进水孔。进水孔连接进水管20028的下端头，进水管20028的上端头穿过下法兰2005连接法兰盘体下面的出水口。出水孔连接出水管20023的下端头，出水管20023的上端头穿过下法兰2005连通法兰盘体上的冷却介质通道。
使用时，在下法兰2005的下方可以设置冷却盘20025，也可以不设置冷却盘20025。若在下法兰2005的下方设置冷却盘20025时，具体结构如图13所示，冷却介质由进水口2006进入进水腔20011，然后由进水腔20011上的出水口进入进水管20028，由进水管20028进入冷却盘20025内的空腔20024，然后由空腔20024进入出水管20023，经出水管20023进入冷却介质通道，在冷却介质通道内经导流板20032导流由冷却介质通道内通过回水过渡管20030进入回水腔20020，由回水腔20020进入出水口2002排出。当下法兰2005的下方不设置冷却盘20025时，冷却介质由进水口2006进入进水腔20011，然后由进水腔20011上的出水口进入进水管20028，此时，当进水管20028设置在冷却介质通道的内部时，进水管20028的下端头位于冷却介质通道的下部。冷却介质经进水管20028流入冷却介质通道的下部后，在冷却介质通道内经导流板20032导流，冷却介质由冷却介质通道的下部向上部流动，冷却介质在冷却介质通道的上部通过回水过渡管20030进入回水腔20020，由回水腔20020进入出水口2002排出。当进水管20028设置在冷却介质通道的外部时，进水管20028的下端头位于冷却介质通道的下部，进水管20028的下端头经弯头连接设置在冷却介质通道下部的进水口，冷却介质经进水管20028流入冷却介质通道的下部后，在冷却介质通道内经导流板20032导流，冷却介质由冷却介质通道的下部向上部流动，冷却介质在冷却介质通道的上部通过回水过渡管20030进入回水腔20020，由回水腔20020进入出水口2002排出。或者当下法兰2005的下方不设置冷却盘20025时，冷却介质由进水口2006进入进水腔20011，然后由进水腔20011上的出水口进入进水管20028，此时，进水管20028的下端头位于冷却介质通道内部的上部。冷却介质进入冷却介质通道后，在冷却介质通道内经导流板20032导流至冷却介质通道的底部，此时在冷却介质通道的下部连接出水管20023，出水管20023的下端头位于冷却介质通道的下部，出水管20023上端头连接回水过渡管20030，冷却介质通道底部的冷却介质通过出水管20023和回水过渡管20030进入回水腔20020，由回水腔20020进入出水口2002排出。
本发明在具体实施时，所有涉及到的冷却介质出入口均可以设置为多组。
在具体应用时，根据本实施例的晶体冷却装置设置在位于炉室内的坩埚的上方，下法兰2005的下表面或冷却盘20025的下表面接近坩埚内的硅料融液但不能接触。工作时，首先将碎硅料放入坩埚内，开启加热器对位于坩埚支撑座上的坩埚进行加热，待坩埚的碎硅料熔化为硅料融液后，上提拉头带动籽晶下降。当籽晶穿过晶体冷却管2007或晶体冷却管2007与晶体提拉孔20027后与硅料融液接触停止籽晶下降，待籽晶的下端头熔化后缓慢提升籽晶。此时，由于本发明内通入了冷却介质，使下法兰2005的下表面或冷却盘20025下表面的温度形成下高上低的温度梯度。此时，硅料融液跟随籽晶上升，当硅料融液接近下法兰2005的下表面或冷却盘20025的下表面时，由于此处的温度低于坩埚的温度，硅料融液逐渐结晶。当结晶的硅料融液进入晶体冷却管2007内或晶体冷却管2007与晶体提拉孔20027内后，温度逐渐降低，从而形成所需要的硅芯。应用时，本发明中的冷却介质通道可以对刚刚结晶后的硅芯进行强制冷却，大大提高了硅芯的成品率及拉制效率。
本发明中涉及到的碎硅料不仅包括硅芯制备过程中出现的余料，不小心折断的硅芯，多/单晶硅生产企业在还原、切割、磨抛等工艺阶段产生的碎料等，同样还包括其它形状的硅料(比如菜花料、长度较小的硅棒等)，或直接采购新的硅料使用本发明直接拉制硅芯。
本发明在实际应用时，不仅可以用于硅芯的拉制，同时还可以实现其它晶体材料的拉制。
本实施例通过在上法兰与下法兰之间设有多个晶体冷却管，在晶体冷却管的外围设置冷却介质通道，使得能够利用冷却介质在坩埚上方的空间形成低温区，从而形成下高上低的温度梯度，实现了降低坩埚上方熔融硅液的温度，增加硅液的粘稠度，利于硅液跟随籽晶结晶。最重要的是，可以对硅芯进行冷却，进而提高硅芯的拉制速度。根据本实施例，在提高硅芯拉制速度的同时，还实现了多根硅芯的同时拉制等。本实施例用于碎硅料同时拉制多根硅芯的装置时，有效的避免了碎硅料的资源浪费等，适合大范围的推广和应用。
第二实施例
图15至图21示出了根据本申请第二实施例的设置有保温板的冷却装置的示意图，该实施例将根据第 一实施例的冷却装置与保温板相结合，具体地，在冷却装置的下方设置保温板。
本实施例中的冷却介质通道、套管、冷却盘以及隔板等结构的设置可以采用上述第一实施例中的各结构(例如，如图5至14所示)，并且，本实施例中的保温板的结构如图15、16、19、20、21以及22所示，然而本申请各部件的结构并不限于此。
结合图15至图18所述的一种用于晶体拉制时的晶体冷却装置，包括上法兰4003、下法兰4005、晶体冷却管4007、冷却介质通道和保温板40030，在上法兰4003与下法兰4005之间设有多个晶体冷却管4007。
实施时，多个晶体冷却管的设置形式为中间设置一个晶体冷却管，在中间晶体冷却管的外围呈放射状设有多组晶体冷却管，每组晶体冷却管包括至少两个晶体冷却管。可替代地，多个晶体冷却管的第二设置形式为在上法兰4003上气体穿孔40031的外围呈放射状设置多组晶体冷却管(如图16所示)，多组晶体冷却管的设置形式可以为位于一个同心圆上的晶体冷却管为一组；也可以是延着同一条直径向外的晶体冷却管为一组。每组晶体冷却管包括至少两个晶体冷却管，晶体冷却管4007的设置数量具体根据所拉制晶体的数量进行选择。
在晶体冷却管4007的外围设有冷却介质通道，冷却介质通道内通入用于降温的冷却介质，冷却介质通道的进口通过管道连接冷却源，冷却介质通道的出口通过管道连接冷却介质回收机构，在下法兰4005的下面设有保温板40030。
或可替代地，如图5至图11所示，在下法兰2005的下方设有冷却盘20025，冷却盘20025的中部设有空腔20024，在空腔20024内设有多个固定柱20026，在每个固定柱20026上分别设有晶体提拉孔20027，空腔20024分别连通出水管20023和进水管20028。出水管20023和进水管20028连通冷却介质通道。在冷却盘20025的下面设有保温板40030形成所述的用于晶体拉制时的晶体冷却装置。
本发明在实际应用中，通过设置保温板，可以解决实际应用中的问题并起到如下效果：
1、由于与坩埚内熔液接近的下法兰或冷却盘内通有冷却介质，此时下法兰或冷却盘的外表面温度低于其所处区域的温度。当坩埚中的硅料熔融成硅液后，此时硅液中及炉室内的杂质挥发后漂浮至下法兰或冷却盘的下底面或侧壁上。由于下法兰或冷却盘内通有冷却介质，下法兰或冷却盘的温度相对较低，于是挥发物就冷凝附着在下法兰或冷却盘的底面或侧壁上。当挥发物堆积到一定厚度后，由于气流扰动再加上热胀冷缩效应，挥发物会掉落至坩埚内并漂浮在熔液的上表面。由于挥发物的熔点高于硅料的熔点，因此挥发物不会被熔化，更无法被气化。换言之，挥发物会持续存在于熔液的上表面。由于拉制时坩埚一直旋转，坩埚内的挥发物不会静止处于硅熔液上表面的某一处不动，而是位置漂浮不定。一旦漂浮物附着到硅芯结晶位置，轻则导致所拉制硅芯的外缘面凸起变形，严重时甚至会因硅芯直径的变化而导致硅芯卡死在晶体穿孔内，最终被迫停机，结束本轮的拉制。所拉制的硅芯也无法当做成品使用，只能报废处理。
通过保温板的设置，可以降低或者避免通入的冷却介质导致下法兰或冷却盘的表面温度低于炉内挥发物附着沉积的温度，进而可以减少或避免熔液内的挥发物冷凝附着在下法兰或冷却盘的外表面。
2、由于下法兰或冷却盘的下面为平面，冷却介质对下法兰或冷却盘上每个晶体拉制孔的冷却效果是相同的。实际使用时，采用筒状加热器在坩埚外侧加热，由于是圆形坩埚，这样就会形成外侧区域高于中心区域的温度，坩埚内的温度从坩埚的内边缘至坩埚的中心逐渐降低。因此，在拉制时处于下法兰或冷却盘外圈的晶体由于外圈温度高于内圈温度导致其结晶速度低于处于下法兰或冷却盘内圈的晶体(越靠近坩埚中心位置结晶速度由于温度相对低就会越快)，在相同拉制速度的条件下，处于下法兰或冷却盘外圈的晶体直径会小于处于下法兰或冷却盘内圈的晶体直径，进而导致同时拉制的多根晶体的直径不一致。
通过保温板的设置，可以更好的保证下法兰2005或冷却盘20025上各个晶体下穿孔2009或晶体提拉孔20027温度的均匀性(即可以调节处于下法兰上内圈晶体下穿孔2009与外圈的晶体下穿孔2009的温度或冷却盘20025上内圈的晶体提拉孔20027与外圈的晶体提拉孔20027的温度，进而实现内圈与外圈上晶体下穿孔2009或晶体提拉孔20027的温度趋于等温)，进而保证内、外圈晶体结晶的一致性。
3、下法兰或冷却盘的下表面靠近但不接触坩埚内熔液的上表面，此时下法兰或冷却盘表面的低温会吸收坩埚上方的部分热量，从而导致不必要的热量损失，造成一定的电耗损失等。
通过保温板的设置，还可以使坩埚内结晶区域的温度趋于均匀，降低或避免了下法兰2005或冷却盘20025内的冷却介质导致的坩埚内的结晶区域的不期望的冷却降温(下法兰2005或冷却盘20025表面温度低，可以带走一部分热量，热量损失后，进而导致温度的降低)。进一步地，由于保证了坩埚内结晶区域的温度不会降低，就不需要通过加大加热功率的方法来保证坩埚内结晶区域的温度不被降低，进而实现了降低能耗的效果(即通过保温板的设置，可以减少或调节下法兰2005或冷却盘20025对坩埚内熔液液面温度的吸收，从而避免不必要的热量损失，避免造成电耗的增加等)，进而还可以实现坩埚结晶区域的温度均匀等。
通过设置保温板可以增大下法兰4005或冷却盘20025的表面厚度，当下法兰4005或冷却盘20025的表面厚度增大以后，进而提高下法兰4005或冷却盘20025的保冷效果(本申请通过设置保温板来调整下法兰4005或冷却盘20025的壁厚，进而改善冷气的散失效果，即壁薄处散冷快，壁厚处散冷慢)，从而，减少下法兰4005或冷却盘20025内的低温散失过快。
进一步，如图21、22所示，在冷却装置的下法兰或冷却盘40025的下面由外向内设有至少一级向上凹陷的台阶而形成的阶梯面。为了同时实现更多根晶棒的拉制，在下法兰或冷却盘40025上自外缘向内依次间隔设置多圈晶体提拉孔40027(如图22所示)，此时，为了保证每圈晶体提拉孔40027所拉制晶体直径的一致性，主要应规避的技术问题是克服坩埚内熔液温度不均匀的问题，因此，在下法兰或冷却盘40025的下面由外向内设有至少一级向上凹陷的台阶形成阶梯面，在每级阶梯面上分别设置一圈晶体提拉孔40027，阶梯面的外形与保温板40030(如图21或22所示)上的阶梯台阶4003003一致。实施时，设置阶梯台阶可以更好的保证下法兰4005或冷却盘40025上晶体穿孔或晶体提拉孔40027温度的均匀性，进而保证内外圈晶体结晶的一致性。
进一步，如图20所示，保温板40030可以为平板型结构，在保温板40030上设有多个穿孔4003001，每个穿孔4003001分别对应下法兰4005上的晶体下穿孔4009或冷却盘40025上的晶体提拉孔40027(如图20所示)。保温板40030的外形尺寸大于或等于下法兰4005或冷却盘40025的外形尺寸。实施时，可以在保温板40030的中部设有中心孔，如图22中的4003002，在中心孔的外围呈放射状设有多组穿孔，如图22中的4003001，中心孔及穿孔分别对应下法兰或冷却盘上的晶体下穿孔2009或晶体提拉孔40027。
进一步，如图22所示，保温板40030为平板型结构时，在保温板的上面由外向内设有至少一级向上凸起的阶梯台阶4003003，阶梯台阶4003003与下法兰或冷却装置或冷却盘400254下面的阶梯面对应配合。
进一步，如图15以及图16和图19、20所示，可替换地，保温板40030设置为在保温板的中部设置向下凹陷的凹槽形成桶型结构，在保温板上设有多个穿孔，每个穿孔分别对应下法兰上的晶体下穿孔4009或冷却盘40025上的晶体提拉孔40027(如图22所示)，凹槽的内缘面与下法兰4005或冷却盘40025的外缘面为间隙配合或过盈配合。
进一步，如图15以及图16和图19、21所示，保温板40030中部设置向下凹陷的凹槽形成桶型结构。在实施时，其替换结构为在平板型结构的保温板上面放置保温环，由保温环和平板型结构的保温板组合形成桶型结构。
实施时，保温环为环形结构，将一个保温环或多个保温环叠加在一起后放置在平板型结构的保温板上。即，桶型结构的保温板，其可以设置为一体结构，也可以设置为分体结构。当设置为分体结构时，桶型结构的保温板包括保温环和底板，保温环的环体设置在底板上或多个保温环叠置在底板上，保温环的环体形成桶型结构的保温板的桶壁，底板形成桶型结构的保温板的桶底。
或者，可替换地，在平板型结构的保温板上面放置多块弧形保温块，由多块弧形保温块围成保温环，由多块弧形保温块围成的保温环及平板型结构的保温板组合形成桶型结构。
实施时，通过将一个完整的保温环切割成多个弧形块来形成弧形保温块，然后由切割后的弧形块按预定间距再重新组合成一个完整的保温环，从而可以调整每一块弧形保温块的厚度及两两弧形保温块之间的间距。
实施时，平板型结构的保温板与保温环的材质可以设置为同一材质。或者平板型结构的保温板与保温环的材质可以设置为不同材质。
进一步，如图21所示，下法兰或冷却盘40025的外缘面与凹槽的内缘面间隙配合时，在间隙处设有保温填充物40032。保温填充物为石英毡或石墨毡或锆毡中的任意一种。
进一步，如图21所示，保温板40030设置为桶型结构时，在保温板的上面由外向内设有至少一级向上凸起的阶梯台阶，如图22的4003003，阶梯台阶与下法兰4005或冷却盘40025下面的阶梯面对应配合。实施时，设置阶梯台阶可以更好的保证下法兰4005或冷却盘40025上晶体下穿孔4009或晶体提拉孔40027温度的均匀性，由于坩埚的温度分布范围为外围温度高于中心温度，在拉制晶体时，下法兰4005或冷却盘40025的冷却范围也应随之变化，进而保证内外圈晶体结晶的一致性。
实施时，保温板的外形尺寸大于下法兰或冷却盘的外形尺寸，结构如图20所示。保温板40030的外缘面向外延伸，这样可以减少或避免挥发物粘附到下法兰4005或冷却盘40025的外缘面上，同时还可以起到托盘的作用，将挥发物落在保温板40030延伸出的上表面等。当保温板40030的外形尺寸等于下法兰或冷却盘40025的外形尺寸时，结构如图22所示。保温板40030与下法兰4005或冷却盘40025连接时可以通过粘接的形式连接，也可以通过销钉或螺钉固定的方式连接，也可以通过连接杆挂接在下法兰4005或冷却盘40025的下方等。保温板的材质可以为石墨毡或石墨板或碳碳复合材料板等。
设置桶形结构的保温板，可以起到防止挥发物粘接并堆积到下法兰或冷却盘的侧壁上，同时还可以起到调节下法兰或冷却盘侧壁保温效果的作用，通过调节下法兰或冷却盘侧壁的保温效果，实现调节下法兰或冷却盘外圈上晶体下穿孔4009或晶体提拉孔40027的温度，进而实现调节所拉制柱形晶体的直径。设置保温填充物40032的作用也是在起保温作用的同时，通过调整添加保温填充物的厚度大小来调整保温温度，最终实现调整下法兰或冷却盘外圈上晶体下穿孔4009或晶体提拉孔40027的温度，实现调节所拉制柱形晶体的直径等。
实施时，还可以在下法兰或冷却盘的上面板设置保温板，即在下法兰或冷却盘的外表面全部包覆一层保温材料。
实施时，在保温板的中部可以设置与冷却盘40025中心部位穿孔一致的中心孔4003002，在中心孔的外围设置多个与冷却盘40025上晶体提拉孔40027一一对应的穿孔1003001。当下法兰或冷却盘40025的下面由外向内设置至少一级向上凹陷的台阶形成阶梯面时，保温板随之由外向内设置至少一级向上凸起的阶梯台阶4003003，阶梯台阶4003003与下法兰或冷却盘40025上的阶梯面配合，具体结构详见附图21和图22。
实施时，冷却介质优选冷却纯水，同时可以选择其它冷却气体。实施时，还可以在下法兰4005的下方设置冷却盘20025(如图10至11所示)，在冷却盘20025的中部设有空腔20024，在空腔20024内设有多个固定柱20026，在每个固定柱20026上分别设有晶体提拉孔20027，空腔20024分别连通出水管20023和进水管20028，出水管20023和进水管20028连通设置在下法兰2005或4005上的进水分口和出水分口。
本发明在具体应用时，其设置在位于炉体内坩埚的上方，本发明下法兰或冷却盘的下面接近坩埚内熔液但不能接触。工作时，首先将原料放入坩埚内，开启加热器对位于下轴上的坩埚进行加热，待坩埚的原料熔化为熔液后，上提拉机构带动籽晶下降。当籽晶穿过晶体下穿孔2009或晶体下穿孔2009及晶体提拉孔20027、穿孔100501后与熔液接触停止籽晶下降，待籽晶的下端头熔化后缓慢提升籽晶。由于下法兰或冷却盘内通入了冷却介质，此时，熔液跟随籽晶上升，当熔液接近下法兰或冷却盘的下面时，由于此处的温度低于坩埚的温度，熔液逐渐结晶。当结晶的熔液进入晶体下穿孔2009或晶体下穿孔2009及晶体提拉孔20027后温度逐渐降低便形成所需要的柱形晶体。
应用时，下法兰或冷却盘中的冷却介质通过晶体下穿孔2009或晶体下穿孔2009及晶体提拉孔20027可以对刚刚结晶后的柱形晶体进行强制冷却，下法兰或冷却盘上设置的保温板可以避免挥发物粘附在下法兰或冷却盘的表面，同时通过保温板的设置，还可以调整每圈晶体下穿孔2009或晶体提拉孔20027的保温(保冷效果)效果，进而实现调整内、外圈晶体下穿孔2009或晶体提拉孔20027所拉制柱形晶体的直径等。
实施时，保温板上设置的阶梯台阶100502的外形可以设置为圆形或在每两个穿孔100501之间设置向内凹陷的圆弧形成的梅花形或在每两个穿孔100501之间设置向外突出的圆弧或各种异形形状。
本发明在具体实施时，所有涉及到的冷却介质出入口均可以设置为多组。
本发明中涉及到的碎硅料不仅包括硅芯制备过程中出现的余料，不小心折断的硅芯，多/单晶硅生产企业在还原、切割、磨抛等工艺阶段产生的碎料等，同样还包括其它形状的硅料(比如菜花料、长度较小的硅棒等)，或直接采购新的硅料使用本发明直接拉制硅芯。
本实施例在实际应用时，不仅可以用于硅芯的拉制，同时还可以实现其它晶体材料的拉制。
本实施例通过在上法兰与下法兰之间设有多个晶体冷却管，在晶体冷却管的外围设有冷却介质通道，通过冷却介质对坩埚以上的空间形成低温区，从而形成下高上低的温度梯度，同时还可以实现降低坩埚上方熔化硅液的温度，增加硅液的粘稠度，利于硅液跟随籽晶结晶，最主要的是还可以对硅芯进行冷却，进而提高硅芯的拉制速度。
并且，本实施例在下法兰或冷却盘的下面设有保温板，通过保温板对晶体冷却机构的表面进行保温，有效的避免了挥发物因冷凝现象附着在晶体冷却机构的下面和侧壁上。本实施例在实现避免挥发物粘附在晶体冷却机构上的同时，由于保温板的保温作用，避免了因晶体冷却机构下面的低温对其对应坩埚区域的降温，防止晶体冷却机构带走过多的温度，起到了降低加热能耗的作用等。同时，由于保温板的保温作用，使晶体冷却机构内冷却介质的冷却效果完全作用在晶体上提拉孔内孔壁上，进而提高对拉制晶体的冷却效果，实现晶体的快速结晶，起到了提高晶体拉制速度的目的等。
本申请的应用实施例
根据本申请，还提供一种人工晶体制备装置，该装置包括：炉体；设置在炉体中的坩埚，设置成能够在炉体内上下移动；设置在坩埚上方的提拉装置，其设置成能够在坩埚上方上下移动，并且提拉装置的端部设置有容纳部；以及设置在坩埚上方的晶体冷却装置，该晶体冷却装置设置有供从坩埚中拉制出来的晶 体穿过的至少一个第一提拉孔，提拉装置的端部分别与第一提拉孔对准。
图23示出了根据本申请一个实施例的人工晶体制备装置。如图23所示，该人工晶体制备装置包括：炉体1001、上提拉机构1002、晶体冷却机构1004、保温板1005、坩埚1007和加热器1008。上提拉机构1002对应于本申请的提拉装置，晶体冷却机构1004为本申请的晶体拉制机构的一个具体示例。在炉体1001内设有加热器1008，在炉体1001的内壁与加热器1008外缘面之间设有保温层，在加热器1008的中部设有位置固定不动或可上下升降的坩埚1007，在坩埚1007的上方设有位置固定不动或可上下升降的晶体冷却机构1004。坩埚1007上下升降或晶体冷却机构1004上下升降可以实现晶体冷却机构1004的下表面与坩埚1007内的熔液1006的液面的距离趋于不变。具体实施时，通过坩埚1007上下升降或者晶体冷却机构1004上下升降，均可保证晶体冷却机构1004的下表面与坩埚1007内熔液1006液面的距离趋于不变。在晶体冷却机构1004的下部设有保温板1005，在保温板1005上设有多个与晶体冷却机构1004上的晶体上提拉孔100401一一对应的晶体下提拉孔100501，其中，晶体上提拉孔为本申请的第一提拉孔的一个具体示例，晶体下提拉孔为本申请的第二提拉孔的一个具体示例。在晶体冷却机构1004的上方设有上提拉机构1002，该上提拉机构1002的端部设置有容纳部，上提拉机构1002的容纳部中容纳的籽晶的下端头分别对准晶体冷却机构1004的晶体上提拉孔100401。该晶体上提拉孔100401为本申请的第一提拉孔的一个具体示例。通过该冷却机构能够同时拉制多根晶体。
本发明在实际应用中，通过设置保温板1005，可以起到如下效果：
1、通过保温板1005的设置，可以降低或者避免通入的冷却介质导致晶体冷却机构1004的表面温度低于炉内挥发物附着沉积的温度，进而可以减少或避免熔液1006内的挥发物冷凝附着在晶体冷却机构1004的外表面。
2、通过保温板1005的设置，可以更好的保证晶体冷却机构1004上各个晶体上提拉孔100401温度的均匀性(即可以调节处于晶体冷却机构1004上内圈晶体上提拉孔100401与外圈晶体上提拉孔100401的温度，进而实现内圈与外圈上的晶体上提拉孔100401的温度趋于等温)。
3、通过保温板1005设置成至少一级向上凹陷的台阶形成阶梯面，通过阶梯厚度不一样达到减弱冷却机构1004的冷却效果。即中心拉制时需要的温度高，保温板1005中心部位厚度厚，就可以消弱其对熔液1006的降温作用，反之，外侧拉制需要的温度低，保温板1005边缘部位厚度薄，就可以加大其对熔液1006的降温作用，通过保温板1005的设置，可以实现内外侧拉制条件趋于相同，进而保证内、外圈晶体结晶的一致性，从而保证每圈所拉制晶体直径的一致性。
4、通过保温板1005的设置，还可以使坩埚内结晶区域的温度趋于均匀，降低或避免了晶体冷却机构1004内的冷却介质导致的坩埚内的结晶区域的不期望的冷却降温(晶体冷却机构1004表面温度低，可以带走一部分热量，热量损失后，进而导致温度的降低)。进一步地，由于保证了坩埚内结晶区域的温度不会降低，就不需要通过加大加热功率的方法来保证坩埚内结晶区域的温度不被降低，进而实现了降低能耗的效果(即通过保温板1005的设置，可以减少或调节晶体冷却机构1004对坩埚内熔液1006液面温度的吸收，从而避免不必要的热量损失，避免造成电耗的增加等)。
具体实施时，为了实现晶体冷却机构1004的下表面与坩埚1007内熔液1006液面的距离趋于不变，优选地是，坩埚1007上下升降，晶体冷却机构1004位置不动。坩埚1007上下升降是本领域常规且较为常用的技术方案。具体实施时，坩埚1007的下端可以设置在坩埚支撑座上，坩埚支撑座的下端连接能够上下升降的下轴1009，通过下轴1009的升降实现坩埚1007的上下升降。该技术方案不仅结构简单，同时也可以始终保证晶体的结晶线不变(即熔液1006的液面始终处于加热器的固定位置)。
若选择晶体冷却机构1004上下升降，而坩埚1007固定不动的技术方案，则晶体冷却机构1004连接至升降机构以实现上下升降功能。通过升降机构带动晶体冷却机构1004实现上下升降。需要说明的是，升降机构是本领域的常规技术，具体结构在此不做累述。
具体实施时，还可以将加热器1008设置为可上下升降的结构。当坩埚1007内的熔液1006的液面下降时，在晶体冷却机构1004下降的同时加热器1008也随之下降。这同样也可以保证晶体的结晶线不变。同样，加热器1008的升降结构也是本领域的常规结构设置，在此不做累述。
进一步，所述晶体冷却机构1004上面的中部设有上穿孔100403，在晶体冷却机构1004内设有空腔100402。在上穿孔100403外围呈放射状设有多组固定柱，每组固定柱包括至少两个固定柱，实施时，多组固定柱的设置形式可以为位于一个同心圆上的固定柱为一组；也可以是延着同一条直径向外的固定柱为一组；在每个固定柱上分别设有晶体上提拉孔100401，空腔100402分别连通出水管和进水管，所述出水管和进水管分别连接冷却介质源。
进一步，为了同时拉制更多根晶棒，在晶体冷却机构1004上自外缘向内依次间隔设置多圈晶体上提拉孔100401。此时，为了保证每圈晶体上提拉孔100401所拉制晶体直径的一致性，需要克服坩埚1007内 熔液温度分布不均匀的问题。因此，在所述晶体冷却机构1004的下面由外向内设有向上凹陷的至少一级台阶的阶梯面，在每级阶梯面上分别设置一圈晶体上提拉孔100401。
涉及到晶体冷却机构1004的具体结构可以采用稍后将说明的根据本申请第二实施例的冷却装置。
所述保温板1005的中部设有下穿孔100503，在下穿孔100503的外围呈放射状设有多组晶体下提拉孔100501。下穿孔100503及晶体下提拉孔100501分别对应于晶体冷却机构1004上的上穿孔100403及晶体上提拉孔100401。
根据本申请的一优选实施方式，如图23、24所示，保温板1005为平板型结构，保温板1005的外形尺寸大于或等于晶体冷却机构1004的外形尺寸。
根据本申请的另一优选实施方式，如图24所示，保温板1005为平板型结构，在保温板1005的上面由外向内设有至少一级向上凸起的阶梯台阶100502。阶梯台阶100502与晶体冷却机构1004下部的阶梯面对应配合。
根据本申请的再一优选实施方式，保温板1005的替换结构形式为保温板1005的中部向下凹陷以形成凹槽的桶型结构，所述凹槽的内缘面与晶体冷却机构1004的外缘面为间隙配合或过盈配合。
根据本申请的又一优选实施方式，保温板1005设置为桶型结构时，在保温板1005的上面由外向内设有至少一级向上凸起的阶梯台阶100502。阶梯台阶100502与晶体冷却机构1004下部的阶梯面对应配合。
晶体冷却机构1004的外缘面与凹槽的内缘面间隙配合时，在间隙内设有保温填充物。保温填充物为石英毡或石墨毡或锆毡中的任意一种。
设置桶形结构的保温板1005，可以起到防止挥发物粘接并堆积到晶体冷却机构1004的侧壁上的作用，同时还可以起到调节晶体冷却机构1004侧壁保温效果的作用。通过调节晶体冷却机构1004侧壁的保温效果，实现调节晶体冷却机构1004外圈上晶体上提拉孔100401的温度，进而实现调节所拉制柱形晶体1003的直径。设置保温填充物的作用也是在起保温作用的同时，通过调整添加保温填充物的厚度大小来调整保温温度，最终实现调整晶体冷却机构1004外圈上晶体上提拉孔100401的温度，实现调节所拉制柱形晶体1003的直径等。
所述晶体冷却机构1004的下部由外向内设有向上凹陷的至少一级台阶的阶梯面，在所述阶梯面的下面设有与阶梯面形状一致的保温板1005。实施时，设置阶梯台阶可以更好的保证晶体冷却机构1004上的晶体上提拉孔100401温度的均匀性。由于坩埚的温度分布范围为外围温度高于中心温度，在拉制晶体时，晶体冷却机构1004的冷却范围也应随之变化，进而保证内外圈晶体结晶的一致性。
如图1所示，所述保温板1005为平板型结构，保温板1005的外形尺寸大于或等于晶体冷却机构1004的下法兰或冷却盘的外形尺寸。也即是说，根据本申请的一个优选实施方式，保温板1005的外形尺寸大于晶体冷却机构1004的外形尺寸，保温板1005的外缘面向外延伸，这样可以减少或避免挥发物粘附到晶体冷却机构1004的外缘面上，同时还可以起到托盘的作用，使挥发物落在保温板1005延伸出的上表面等。
根据本申请的又一优选实施方式，保温板1005的外形尺寸等于晶体冷却机构1004的外形尺寸，保温板1005与晶体冷却机构1004连接时可以通过粘接的形式连接，也可以通过销钉或螺钉固定的方式连接，也可以通过连接杆挂接在晶体冷却机构1004的下方等。
保温板1005的材质可以为石墨毡或石墨板或碳碳复合材料板等。
实施时，还可以在晶体冷却机构1004的上面板设置保温板，即在晶体冷却机构1004的整个外表面全部包覆一层保温材料。
实施时，在保温板1005的中部可以设置与晶体冷却机构1004中心部位穿孔一致的下穿孔100503，在下穿孔100503的外围设置多个与晶体冷却机构1004上的晶体上提拉孔100401一一对应的晶体下提拉孔100501。当晶体冷却机构1004的下面由外向内设置至少一级向上凹陷的台阶形成阶梯面时，保温板1005随之由外向内设置至少一级向上凸起的阶梯台阶100502，阶梯台阶100502与晶体冷却机构1004上的阶梯面配合，具体结构详见附图24。
本发明中涉及到的冷却介质为冷却水或冷却油或如液氮等的冷却气体。
本发明在具体应用时，保温板1005设置在位于炉体1001内的坩埚1007的上方，晶体冷却机构1004的下面接近坩埚1007内的熔液1006但不能接触。工作时，首先将原料放入坩埚1007内，开启加热器1008对位于下轴1009上的坩埚1007进行加热。待坩埚1007内的原料熔化为熔液1006后，上提拉机构1003带动籽晶下降。当籽晶穿过晶体上提拉孔100401、晶体下提拉孔100501后与熔液1006接触，此时停止籽晶下降。待籽晶的下端头熔化后缓慢提升籽晶，此时，熔液1006跟随籽晶上升。当熔液接近晶体冷却机构1004的下面时，由于晶体冷却机构1004内通入了冷却介质，因此此处的温度低于坩埚1007的温度，熔液1006逐渐结晶。当结晶的熔液进入晶体上提拉孔100401后温度逐渐降低便形成所需要的柱形晶体1003。 应用时，晶体冷却机构1004中的冷却介质通过晶体上提拉孔100401可以对刚刚结晶后的柱形晶体1003进行强制冷却。晶体冷却机构1004上设置的保温板1005可以避免挥发物粘附在晶体冷却机构1004的表面，同时还可以调整每圈晶体上提拉孔100401的保温(保冷效果)效果，进而实现调整内、外圈晶体上提拉孔100401所拉制柱形晶体1003的直径等。
实施时，保温板1005上设置的阶梯台阶100502的外形可以设置为圆形，或者可以通过在每两个晶体下提拉孔100501之间设置向内凹陷的圆弧而形成为梅花形(具体结构如图25所示)，或者在每两个晶体下提拉孔100501之间设置向外突出的圆弧而形成为花朵形，或其它各种形状。
本发明在具体实施时，所有涉及到的冷却介质出入口均可以设置为多组。
本发明在实际应用时，不仅可以用于硅芯和硅棒的拉制，同时还可以实现其它晶体材料的拉制。
根据本实施例，通过在晶体冷却机构的下面设置保温板，从而通过保温板对晶体冷却机构的表面进行保温，有效的避免了挥发物因冷凝现象附着在晶体冷却机构的下表面和侧壁上。本发明在实现避免挥发物粘附在晶体冷却机构上的同时，由于保温板的保温作用，避免了晶体冷却机构下表面的低温造成的与其相对的坩埚区域的降温，防止晶体冷却机构带走过多的温度，起到了降低加热能耗的作用等。同时，由于保温板的保温作用，使晶体冷却机构内冷却介质的冷却效果完全作用在晶体上提拉孔内孔壁上，进而提高对拉制晶体的冷却效果，实现晶体的快速结晶，达到了提高晶体拉制速度的目的等。
本申请主要应用于使用碎硅料拉制硅芯的硅芯炉上。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明的上述实施例可以进行相互组合，并且本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (29)

  1. 一种用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述晶体冷却装置设置有供拉制出来的晶体穿过的多个第一提拉孔以及对所述晶体进行冷却的冷却介质通道。
  2. 根据权利要求1所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述晶体冷却装置包括上法兰(2003)和下法兰(2005)以及设置在所述上法兰(2003)和所述下法兰(2005)之间的晶体冷却管(2007)，所述晶体冷却管(2007)的一端连接所述上法兰(2003)，所述晶体冷却管(2007)的另一端连接所述下法兰(2005)，所述晶体冷却管(2007)形成所述第一提拉孔，并且所述冷却介质通道设置在所述晶体冷却管(2007)的外围。
  3. 根据权利要求2所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，在所述上法兰(2003)或所述下法兰(2005)上设置有对所述晶体进行冷却的冷却介质进出的出水口(2002)和进水口(2006)。
  4. 根据权利要求2所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述上法兰(2003)上设置有贯通所述上法兰(2003)的晶体上穿孔(2001)，所述晶体上穿孔(2001)与所述第一提拉孔对应设置。
  5. 根据权利要求2所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述上法兰(2003)的下表面设有向上凹陷的凹槽，或者在上法兰(2003)的上表面设有向下凹陷的凹槽，在所述凹槽的开口端设有下盖板(20017)，所述下盖板(20017)与所述凹槽形成进水腔(20011)，在所述凹槽的槽底设有贯通所述上法兰(2003)的晶体上穿孔(2001)，所述晶体上穿孔(2001)与所述第一提拉孔对应设置，在所述下盖板(20017)上设有多个穿孔。
  6. 根据权利要求2所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述上法兰(2003)的上下两面分别设有上凹槽和下凹槽，在所述上凹槽和所述下凹槽的开口端分别设有进水腔盖板(20018)和回水腔盖板(20021)，所述进水腔盖板(20018)与所述上凹槽形成进水腔(20011)，所述回水腔盖板(20021)与所述下凹槽形成回水腔(20020)，在所述进水腔盖板(20018)上分别设有贯通至所述下凹槽槽底的晶体上穿孔(2001)、出水口(2002)和进水口(2006)，所述晶体上穿孔(2001)与所述第一提拉孔对应设置，在所述上凹槽的槽底设有贯通至所述下凹槽槽底的进水孔，所述进水腔(20011)与所述进水口(2006)连通，所述回水腔(20020)与所述出水口(2002)连通，在回水腔盖板(21)上设有多个穿孔。
  7. 根据权利要求2所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述上法兰(2003)包括上圆盘、中圆盘和下圆盘，所述上圆盘、中圆盘和下圆盘叠放设置形成法兰盘体，在所述法兰盘体上表面的中心部位设有贯通所述法兰盘体的中部孔(20034)，在所述法兰盘体的上部设有中空的回水腔(20020)，在所述法兰盘体的下部设有中空的进水腔(20011)，在所述法兰盘体的上表面设有贯通至所述进水腔(20011)的连接管(20019)，所述连接管(20019)形成进水口(2006)，在所述法兰盘体的上表面设有贯通至所述回水腔(20020)的出水口(2002)，在所述法兰盘体的下表面设有贯通至所述回水腔(20020)的回水过渡管(20030)，在所述中部孔(20034)外围的法兰盘体上表面设有贯通所述法兰盘体的晶体上穿孔(2001)，所述晶体上穿孔(2001)与所述第一提拉孔对应设置。
  8. 根据权利要求7所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述法兰盘体的下表面设有过渡环(20033)，所述过渡环(20033)的中部设有中部孔(20034)，在所述过渡环(20033)上表面分别设有晶体上穿孔(2001)、出水开口和回水开口。
  9. 根据权利要求2所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述下法兰(2005)上设置有贯通所述下法兰(2005)的晶体下穿孔(2009)，所述晶体下穿孔(2009)与所述第一提拉孔对应设置。
  10. 根据权利要求2所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述下法兰(2005)的上面设有向下凹陷的凹槽，在所述凹槽的开口端设有上盖板(20015)，所述凹槽与所述上盖板(20015)形成集水腔(20016)，在所述凹槽的槽底设有贯通至所述下法兰(2005)下面的晶体下穿孔(2009)，所述晶体下穿孔(2009)与所述第一提拉孔对应设置，在所述上盖板(20015)上设有多个穿孔。
  11. 根据权利要求2至10中任一项所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述下法兰(2005)的下方设置有冷却盘(20025)，所述冷却盘(20025)中设置有空腔(20024)，并且，所述冷却盘(20025)上设置有与所述晶体下穿孔(2009)对应设置的晶体提拉孔(20027)以及分别与所述空腔(20024) 连通的出水孔和进水孔。
  12. 根据权利要求2至10中任一项所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，在所述上法兰(2003)与所述下法兰(2005)之间设置连接筒(2004)，所述晶体冷却管(2007)设置在所述连接筒(2004)内，所述晶体冷却管(2007)的一端连接到设置在所述上法兰(2003)上的晶体上穿孔(2001)，所述晶体冷却管(2007)的另一端连接到设置在所述下法兰(2005)上的晶体下穿孔(2009)，所述连接筒(2004)的内缘面与所述上法兰(2003)下端面、所述下法兰(2005)上端面之间的空腔形成所述冷却介质通道。
  13. 根据权利要求2至10中任一项所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，在所述晶体冷却管(2007)的外围套接套管(20013)，所述套管(20013)的一端连通设置在所述上法兰(2003)中的进水腔(20011)，所述套管(20013)的另一端连通设置在所述下法兰(2005)中的集水腔(20016)，所述套管(20013)的内缘面与所述晶体冷却管(2007)的外缘面之间的冷却腔(20012)、所述进水腔(20011)和所述集水腔(20016)形成所述冷却介质通道。
  14. 根据权利要求2至10中任一项所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，在所述晶体冷却管(2007)的外围套接套管(200213)，在所述套管(20013)的上端设有向下凹陷的半圆台阶(20022)，所述套管(20013)的上端连通设置在所述上法兰(2003)上的进水腔(20011)，所述半圆台阶(20022)的上端连通设置在所述上法兰(2003)下部的回水腔(20020)，所述套管(200213)的下端连通设置在所述下法兰(2005)上部的集水腔(20016)或连接所述下法兰(2005)，所述套管(20013)的内缘面与所述晶体冷却管(2007)的外缘面之间的冷却腔(20012)、所述进水腔(20011)、所述回水腔(20020)和所述集水腔(20016)形成所述冷却介质通道。
  15. 根据权利要求13或14所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述晶体冷却管(2007)与所述套管(20013)之间的所述冷却腔(20012)内设有隔板(20029)。
  16. 根据权利要求2至10中任一项所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述晶体冷却装置设置有多个所述晶体冷却管(2007)，所述晶体冷却装置的中间设置一个所述晶体冷却管(2007)，在中间的所述晶体冷却管(2007)的外围呈放射状设有多组晶体冷却管(2007)，每组晶体冷却管(2007)包括至少两个所述晶体冷却管(2007)；或者在所述晶体冷却装置的中间设置中部孔(20034)，在所述中部孔(20034)的外围呈放射状设有多组晶体冷却管(2007)，每组晶体冷却管(2007)包括至少两个所述晶体冷却管(2007)。
  17. 根据权利要求7或8所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，在所述法兰盘体与所述下法兰(2005)之间分别设置连接筒(2004)和内侧连接筒(20031)，所述晶体冷却管(2007)设置在所述连接筒(2004)与所述内侧连接筒(20031)之间的空腔内，所述晶体冷却管(2007)的上端连接到设置在所述法兰盘体上的晶体上穿孔(2001)，所述晶体冷却管(2007)的下端连接到设置在所述下法兰(2005)上的晶体下穿孔(2009)，所述连接筒(2004)的内缘面与所述上法兰(2003)下端面、所述下法兰(2005)上端面、所述内侧连接筒(20031)的外缘面之间的空腔形成所述冷却介质通道。
  18. 根据权利要求12或17所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，在所述连接筒上设置有供对所述晶体进行冷却的冷却介质进出的出水口(2002)和进水口(2006)。
  19. 根据权利要求17所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述下法兰(2005)的下方设置有冷却盘(20025)，所述冷却盘(20025)中设置有空腔(20024)，并且，所述冷却盘(20025)上设置有与所述晶体下穿孔(2009)对应设置的晶体提拉孔(20027)以及分别与所述空腔(20024)连通的出水孔和进水孔，所述进水孔连接进水管(20028)的下端头，所述进水管(20028)的上端头穿过所述下法兰(2005)连接所述法兰盘体下面的出水口，所述出水孔连接出水管(20023)的下端头，所述出水管(20023)的上端头穿过所述下法兰(2005)连通所述法兰盘体上的冷却介质通道。
  20. 根据权利要求2所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述晶体冷却装置还包括设置在所述下法兰(4005)下面的保温板(40030)，所述保温板(40030)上设置有至少一个第二提拉孔，所述第二提拉孔设置成与所述下法兰(4005)上的所述晶体下穿孔(4009)一一对应。
  21. 根据权利要1所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述晶体冷却装置还包括设置在所述冷却盘(40025)下面的保温板(40030)，所述保温板(40030)上设置有至少一个第二提拉孔，所述第二提拉孔设置成与所述冷却盘(40025)上所述晶体提拉孔(40027)一一对应。
  22. 根据权利要求20或21所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述保温板(40030)的中部设有中心孔(4003002)，所述第二提拉孔在所述中心孔(4003002)的外围呈放射状设置。
  23. 根据权利要求20或21所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述保温板(40030)的外形尺寸大于或等于所述下法兰(4005)或所述冷却盘(40025)的外形尺寸。
  24. 根据权利要求20或21所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，在所述保温板(40030)的上表面由外向内设有向上凸起的阶梯台阶(4003003)，所述阶梯台阶(4003003)与所述下法兰(4005)或所述冷却盘(40025)下表面的阶梯面对应配合。
  25. 根据权利要求20或21所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述保温板(40030)设置为在中部设置向下凹陷的凹槽而形成桶型结构，所述凹槽的内缘面与所述下法兰(4005)或所述冷却盘(40025)的外缘面为间隙配合或过盈配合。
  26. 根据权利要求25所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述凹槽的内缘面与所述下法兰(4005)或所述冷却盘(40025)的外缘面为间隙配合时，在所述间隙处设有保温填充物(40032)。
  27. 根据权利要求11所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述冷却盘(40025)上面的中部设有上穿孔，在所述冷却盘(40025)内设有空腔(40024)，在所述上穿孔外围呈放射状设有多个所述晶体提拉孔(40027)。
  28. 根据权利要求11所述的用于同时拉制多根晶体的晶体冷却装置，其特征在于，所述下法兰(4005)或所述冷却盘(40025)的下表面由外向内设有向上凹陷的台阶而形成的阶梯面，在每级阶梯面上分别设置一圈所述晶体提拉孔(40027)。
  29. 一种人工晶体制备设备，其特征在于，所述设备包括根据权利要求1至28中任一项所述的晶体冷却装置。
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