WO2023179507A9 - 一种高频大功率封装模组、模组的制作方法及混合基板 - Google Patents

一种高频大功率封装模组、模组的制作方法及混合基板 Download PDF

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WO2023179507A9
WO2023179507A9 PCT/CN2023/082358 CN2023082358W WO2023179507A9 WO 2023179507 A9 WO2023179507 A9 WO 2023179507A9 CN 2023082358 W CN2023082358 W CN 2023082358W WO 2023179507 A9 WO2023179507 A9 WO 2023179507A9
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frequency
module
circuit layer
power
semiconductor
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PCT/CN2023/082358
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French (fr)
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WO2023179507A1 (zh
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曾剑鸿
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上海沛塬电子有限公司
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Publication of WO2023179507A1 publication Critical patent/WO2023179507A1/zh
Publication of WO2023179507A9 publication Critical patent/WO2023179507A9/zh

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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明公开了一种高频大功率封装模组、模组的制作方法及混合基板，包括至少一个功率变换桥臂、至少一个高频电容、电路层、绝缘导热板以及塑封体，半导体功率器件的正面与电路层的第一表面电连接，半导体功率器件的背面与绝缘导热板的下表面热连接或电热连接，高频电容与电路层的第一表面或电路层的第二表面或绝缘导热板的下表面电连接，高频电容的至少一个电极通过内层电连接层与至少一个半导体功率器件的至少一个电极电连接。本发明保障散热能力的同时，大幅减小了回路电感，使得大功率高频得以实现，充分发挥了第三代半导体的优势，并为其性能的更新换代提供了应用基础。
PCT/CN2023/082358 2022-03-20 2023-03-17 一种高频大功率封装模组、模组的制作方法及混合基板 WO2023179507A1 (zh)

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CN202210274148.9 2022-03-20
CN202210274148.9A CN114664758A (zh) 2022-03-20 2022-03-20 一种高频大功率封装模组及其制作方法
CN202210822506.5A CN115621217A (zh) 2022-03-20 2022-07-13 一种高频大功率封装模组及其制作方法
CN202210822506.5 2022-07-13

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CN114664758A (zh) * 2022-03-20 2022-06-24 上海沛塬电子有限公司 一种高频大功率封装模组及其制作方法
CN115050703B (zh) * 2022-08-16 2022-10-25 杭州飞仕得科技有限公司 功率器件封装结构及功率变换器
US20240170418A1 (en) * 2022-11-22 2024-05-23 Infineon Technologies Ag Power semiconductor module and method of producing a power semiconductor module

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