WO2023178597A1 - 显示基板及其驱动方法、制备方法、显示装置 - Google Patents

显示基板及其驱动方法、制备方法、显示装置 Download PDF

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Publication number
WO2023178597A1
WO2023178597A1 PCT/CN2022/082734 CN2022082734W WO2023178597A1 WO 2023178597 A1 WO2023178597 A1 WO 2023178597A1 CN 2022082734 W CN2022082734 W CN 2022082734W WO 2023178597 A1 WO2023178597 A1 WO 2023178597A1
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Prior art keywords
layer
display substrate
electrodes
electrode
conductive layer
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PCT/CN2022/082734
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English (en)
French (fr)
Inventor
周健
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京东方科技集团股份有限公司
北京京东方技术开发有限公司
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Priority to PCT/CN2022/082734 priority Critical patent/WO2023178597A1/zh
Priority to US18/022,273 priority patent/US20240284728A1/en
Priority to CN202280000539.XA priority patent/CN117355886A/zh
Publication of WO2023178597A1 publication Critical patent/WO2023178597A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • Embodiments of the present disclosure relate to but are not limited to the field of display technology, and in particular, to a display substrate and its driving method, preparation method, and display device.
  • display panels have been widely used in products with display functions such as mobile phones, computers, televisions (TVs), medical monitoring devices, and vehicle-mounted central control devices.
  • display functions such as mobile phones, computers, televisions (TVs), medical monitoring devices, and vehicle-mounted central control devices.
  • display technology With the development of display technology, the size and size of display panels have increased. The requirements for features such as thinness and lightness are also getting higher and higher.
  • Embodiments of the present disclosure provide a display substrate, including a substrate, and a first conductive layer, a deformation layer, a second conductive layer and a nanoparticle layer stacked on the substrate;
  • the first conductive layer includes a plurality of first electrodes
  • the second conductive layer includes a plurality of second electrodes
  • the nanoparticle layer includes a plurality of nanoparticles
  • the display substrate includes a plurality of first electrodes. A plurality of sub-pixels defined crosswise with the plurality of second electrodes;
  • first overlapping areas in orthographic projections of the plurality of first electrodes and the plurality of second electrodes on the substrate, and any one of the first overlapping areas and at least one of the nanoparticles are on the substrate.
  • each sub-pixel on the substrate at least partially overlaps with at least two adjacent second overlapping areas.
  • the orthographic projection of each sub-pixel on the substrate at least partially overlaps with two adjacent second overlapping areas; or, the orthographic projection of each sub-pixel on the substrate overlaps with the adjacent two second overlapping regions; The three second overlapping areas at least partially overlap.
  • the display substrate includes a plurality of pixel units, each pixel unit includes a plurality of the sub-pixels, and in the same pixel unit, the arrangement direction of the plurality of sub-pixels is adjacent to each sub-pixel.
  • the arrangement directions of at least two second overlapping areas are different.
  • the above display substrate further includes a black matrix layer, the black matrix layer is disposed between the second conductive layer and the nanoparticle layer, or the black matrix layer is disposed between the nanoparticles a side of the layer away from the second conductive layer;
  • the black matrix layer includes a plurality of black matrix structures, and the plurality of black matrix structures are disposed between two adjacent sub-pixels.
  • the first electrode in the plane where the display substrate is located, is a strip-shaped structure extending in a direction forming a first angle with the first direction, and the second electrode is a strip-shaped structure extending along a first angle with the first direction.
  • the first direction extends in the direction of the second included angle, and the first included angle and the second included angle range from 0° to 180°.
  • the first electrode in a plane where the display substrate is located, the first electrode extends along a second direction, the second electrode extends along a first direction, and the first direction is perpendicular to the second direction.
  • both the first electrode and the second electrode are arc-shaped, and the arc-shaped bending direction of the first electrode is opposite to the arc-shaped bending direction of the second electrode, and the A plurality of sub-pixels are arranged along the arc.
  • the first electrode is formed on the substrate by electron beam evaporation.
  • both the first electrode and the second electrode are light-transmitting structures.
  • the first electrode is a light-reflective structure
  • the second electrode is a light-transmitting structure
  • the above display substrate further includes a reflective layer, and the reflective layer is disposed on a side of the substrate away from the first conductive layer.
  • the above display substrate further includes a reflective layer and an insulating layer, the reflective layer is disposed between the substrate and the insulating layer, the insulating layer is disposed between the reflective layer and the first between conductive layers.
  • the nanoparticles are silver nanoparticles.
  • the thickness of the nanoparticles is from 30 nanometers to 80 nanometers, and the width of the nanoparticles is from 45 nanometers to 65 nanometers.
  • the deformation layer is made of polyacrylate or silicone rubber.
  • the nanoparticles are arranged periodically, and the distance between the center positions of two adjacent nanoparticles is 200 nanometers to 400 nanometers.
  • a distance between a side of the nanoparticles facing the second conductive layer and a side of the first conductive layer facing the deformation layer is 2 nanometers to 20 nanometers.
  • An embodiment of the present disclosure also provides a display device, including the display substrate described in any of the above embodiments.
  • Embodiments of the present disclosure also provide a display driving method, which drives the display substrate described in any of the above embodiments, including: applying different voltages to a plurality of first electrodes and a plurality of second electrodes, so that the first electrode is The deformation layer between the electrode and the second electrode produces different degrees of deformation.
  • An embodiment of the present disclosure also provides a display preparation method, including:
  • a first conductive layer is formed on one side of the substrate, and the first conductive layer includes a plurality of first electrodes arranged in parallel;
  • a second conductive layer is formed on the side of the deformation layer away from the first conductive layer, and the second conductive layer includes a plurality of second electrodes arranged in parallel;
  • a nanoparticle layer is formed on the side of the second conductive layer away from the deformation layer, and the nanoparticle layer includes a plurality of nanoparticles;
  • the display substrate includes a plurality of sub-pixels defined by intersections of the first electrode and the second electrode; orthographic projections of the plurality of first electrodes and the plurality of second electrodes on the substrate exist There are multiple first overlapping areas, and there is a second overlapping area between any one of the first overlapping areas and the orthographic projection of at least one of the nanoparticles on the substrate; the orthographic projection of each sub-pixel on the substrate is consistent with the adjacent At least two of the second overlapping areas at least partially overlap.
  • the first electrode is formed on the substrate using an electron beam evaporation process.
  • a nano self-assembly process is used to form the deformation layer on a side of the first conductive layer away from the substrate.
  • a spot spin coating process is used to form the nanoparticle layer on a side of the second conductive layer away from the deformation layer.
  • Figure 1 shows a schematic flat structure diagram of a display substrate provided by an embodiment of the present disclosure
  • Figure 2 shows a schematic cross-sectional structural diagram at position A-A in Figure 1;
  • Figure 3a shows a schematic diagram of a flat structure of a display substrate provided by an exemplary embodiment of the present disclosure
  • Figure 3b shows a schematic diagram of a flat structure of a display substrate provided by an exemplary embodiment of the present disclosure
  • Figure 3c shows a schematic cross-sectional structural diagram at a sub-pixel position of a display substrate according to an exemplary embodiment of the present disclosure
  • Figure 4a shows a schematic diagram of a flat structure of a display substrate provided by an exemplary embodiment of the present disclosure
  • Figure 4b shows a schematic diagram of a flat structure of a display substrate provided by an exemplary embodiment of the present disclosure
  • Figure 4c shows a schematic cross-sectional structural diagram at a sub-pixel position of a display substrate according to an exemplary embodiment of the present disclosure
  • Figure 5a shows a schematic plan view of a display substrate provided by an exemplary embodiment of the present disclosure
  • Figure 5b shows a schematic cross-sectional structural diagram of the position A1-A1 in Figure 5a;
  • Figure 6a shows a schematic diagram of an arrangement of first electrodes and second electrodes provided by an exemplary embodiment of the present disclosure
  • Figure 6b shows a schematic diagram of an arrangement of first electrodes and second electrodes provided by an exemplary embodiment of the present disclosure
  • Figure 6c shows a schematic diagram of an arrangement of first electrodes and second electrodes provided by an exemplary embodiment of the present disclosure
  • Figure 6d shows a schematic diagram of an arrangement of first electrodes and second electrodes provided by an exemplary embodiment of the present disclosure
  • Figure 6e shows a schematic diagram of an arrangement of first electrodes and second electrodes provided by an exemplary embodiment of the present disclosure
  • Figure 6f shows a schematic diagram of an arrangement of first electrodes and second electrodes provided by an exemplary embodiment of the present disclosure
  • Figure 7 shows a schematic cross-sectional structural diagram of a display substrate provided by an exemplary embodiment of the present disclosure
  • Figure 8 shows a schematic cross-sectional structural diagram of a display substrate provided by an exemplary embodiment of the present disclosure
  • Figure 9a shows the relationship between the wavelength of reflected/transmitted light and the thickness of nanoparticles provided by an exemplary embodiment of the present disclosure
  • Figure 9b shows a schematic diagram of the relationship between the wavelength of reflected/transmitted light and the width of nanoparticles provided by an exemplary embodiment of the present disclosure
  • Figure 9c shows a schematic diagram of the relationship between the wavelength of reflected/transmitted light and the period of nanoparticles provided by an exemplary embodiment of the present disclosure
  • Figure 9d shows a schematic diagram of the relationship between the wavelength of reflected/transmitted light and the incident angle of light provided by an exemplary embodiment of the present disclosure
  • Figure 9e shows a schematic diagram of the relationship between the wavelength of reflected/transmitted light and the distance M between the nanoparticles and the first electrode provided by an exemplary embodiment of the present disclosure
  • Figure 9f shows a schematic cross-sectional structural diagram of a display substrate provided by an exemplary embodiment of the present disclosure
  • Figure 10 shows a schematic planar structural diagram of forming a first conductive layer pattern according to an exemplary embodiment of the present disclosure
  • Figure 11 shows a schematic cross-sectional structural diagram of the L1-L1 position in Figure 10;
  • Figure 12 shows a schematic cross-sectional structural diagram of a dielectric elastomer layer formed according to an exemplary embodiment of the present disclosure
  • Figure 13 shows a schematic plan view of a second conductive layer pattern formed according to an exemplary embodiment of the present disclosure
  • Figure 14 shows a schematic cross-sectional structural diagram of the L2-L2 position in Figure 13;
  • Figure 15 shows a schematic diagram of a planar structure for forming a nanoparticle layer according to an exemplary embodiment of the present disclosure
  • Figure 16 shows a schematic cross-sectional structural diagram of the L3-L3 position in Figure 15.
  • connection should be understood in a broad sense.
  • it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, an indirect connection through an intermediate piece, or an internal connection between two elements.
  • connection should be understood in a broad sense.
  • it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, an indirect connection through an intermediate piece, or an internal connection between two elements.
  • electrical connection includes a case where constituent elements are connected together through an element having some electrical effect.
  • component having some electrical function There is no particular limitation on the “component having some electrical function” as long as it can transmit and receive electrical signals between the connected components.
  • components with certain electrical functions include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with one or more functions.
  • parallel refers to a state in which the angle formed by two straight lines is -10° or more and 10° or less. Therefore, it may include a state in which the angle is -5° or more and 5° or less.
  • vertical refers to a state in which the angle formed by two straight lines is 80° or more and 100° or less. Therefore, it may include a state in which the angle is 85° or more and 95° or less.
  • film and “layer” may be interchanged.
  • conductive layer may sometimes be replaced by “conductive film.”
  • insulating film may sometimes be replaced by “insulating layer”.
  • triangles, rectangles, trapezoids, pentagons or hexagons in this specification are not strictly speaking. They can be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances. There can be leading angles, arc edges, deformations, etc.
  • Thickness in this disclosure is the dimension of the film layer in the direction perpendicular to the substrate.
  • the thinness and lightness of a display panel is an important indicator to measure the characteristics of a display panel.
  • mainstream products in the display field include organic light emitting diode (OLED) display devices and liquid crystal display (LCD) devices.
  • OLED organic light emitting diode
  • LCD liquid crystal display
  • TFT thin film transistor array
  • the thin film transistor array can be set on a substrate, which is called a TFT array substrate for short. Since the TFT array substrate involves multiple film layers Preparation, the preparation process is relatively complex, and multiple film layers have a certain thickness, resulting in the thickness of the OLED display device and LCD being relatively thick. Therefore, the ultra-thinness of the display panel is not high.
  • Embodiments of the present disclosure provide a display substrate, which may include a substrate, and a first conductive layer, a deformation layer, a second conductive layer and a nanoparticle layer stacked on the substrate;
  • the first conductive layer may include a plurality of first electrodes
  • the second conductive layer may include a plurality of second electrodes
  • the nanoparticle layer may include a plurality of nanoparticles
  • the display substrate may include a plurality of first electrodes and a plurality of second electrodes intersecting Defined multiple sub-pixels
  • first overlapping areas in the orthographic projections of the plurality of first electrodes and the plurality of second electrodes on the substrate there are multiple first overlapping areas in the orthographic projections of the plurality of first electrodes and the plurality of second electrodes on the substrate, and there are second overlapping areas in the orthographic projections of any one of the first overlapping areas and at least one nanoparticle on the substrate;
  • each sub-pixel on the substrate at least partially overlaps with at least two adjacent second overlapping areas.
  • the display substrate provided by the embodiment of the present disclosure includes a first conductive layer, a deformation layer, a second conductive layer, and a nanoparticle layer stacked on a substrate.
  • the first conductive layer includes a plurality of first electrodes
  • the second conductive layer includes a plurality of first electrodes.
  • Overlap area; the orthographic projection of each sub-pixel on the display substrate on the substrate at least partially overlaps with at least two adjacent second overlapping areas.
  • the deformation layer corresponding to the second overlapping area after voltage is applied to the first electrode and the second electrode, pressure can be applied to the deformation layer corresponding to the second overlapping area, changing the thickness of the deformation layer corresponding to the second overlapping area, thereby changing the thickness of the deformation layer corresponding to the second overlapping area.
  • the distance between the corresponding nanoparticles and the first electrode further changes the wavelength of light absorbed by the nanoparticles. Therefore, the absorption of light can be changed by adjusting the voltage between the first electrode and the second electrode to achieve the color of the display substrate. show.
  • the display substrate provided by the embodiments of the present disclosure does not require the preparation of a TFT array substrate, has a simple process and is highly thin and light.
  • the nanoparticles, the deformation layer, and the first electrode form a structure with absorption characteristics.
  • the absorbed light energy can be localized in the deformation layer between the nanoparticles and the first electrode.
  • the light absorption characteristics of the deformation layer and the first electrode, as well as the characteristics of absorbing light of different wavelengths and the distance between the nanoparticles and the first electrode change the thickness of the deformation layer by applying different voltages to the first electrode and the second electrode , thereby changing the absorption of light of different wavelengths by the nanoparticles and the deformation layer, thereby achieving reflection or transmission of light of different colors.
  • FIG. 2 shows a schematic cross-sectional structural diagram at position A-A in FIG. 1 , showing that the substrate may include a substrate 10 and a first conductive layer stacked on the substrate 10 , deformation layer 12, second conductive layer and nanoparticle layer 14;
  • the first conductive layer may include a plurality of first electrodes 11, the second conductive layer may include a plurality of second electrodes 13, and the nanoparticle layer 14 may include a plurality of nanoparticles 141; the display substrate may include a plurality of first electrodes 11 and A plurality of sub-pixels Pi defined crosswise by a plurality of second electrodes 13;
  • first overlapping regions S1 in the orthographic projections of the plurality of first electrodes 11 and the plurality of second electrodes 13 on the substrate 10 , and there are orthographic projections of any first overlapping region S1 and at least one nanoparticle 141 on the substrate 10 second overlapping area S2;
  • each sub-pixel Pi on the substrate 10 at least partially overlaps with at least two adjacent second overlapping areas S2.
  • the orthographic projection of each sub-pixel on the substrate 10 at least partially overlaps with two adjacent second overlapping areas S2.
  • each sub-pixel Pi consists of two second overlapping areas S21 and S22 corresponding to the nanoparticles 141, the first electrode 11, the second electrode 13 and
  • the deformation layer 12 controls the absorption of light of corresponding wavelengths and reflects or transmits light of corresponding colors to achieve color display on the display substrate.
  • the sub-pixel shown in Figure 3c reflects or transmits red light
  • the second overlapping area S21 can be set to absorb green light
  • the second overlapping area S22 can be set to absorb blue light
  • the display substrate displays red light (reflection).
  • the position of the second overlapping area S21 reflects or transmits the blue light.
  • red light providing the first electrode 11 corresponding to the second overlapping area S22 with a voltage that absorbs the blue light, then the position of the second overlapping area S22 reflects or transmits the green light and the red light, and the energy of the reflected or transmitted red light is greater than Green and blue energy, thus making the sub-pixel Pi appear red visually.
  • each sub-pixel on the substrate 10 at least partially overlaps with the adjacent three second overlapping areas S2.
  • Each sub-pixel Pi consists of three second overlapping areas S21, S22, S23 corresponding to the nanoparticles 141, the first electrode 11, and the second electrode. 13 and the deformation layer 12 control the absorption of light of corresponding wavelengths to reflect or transmit light of corresponding colors to achieve color display of the display substrate.
  • the second overlapping area S21 can be set to absorb green light
  • the second overlapping area S22 can be set to absorb blue light
  • the second overlapping area S23 can be set
  • the display substrate displays red light (reflective display or transmissive display) and provides a certain voltage to the second electrode 13
  • a voltage that absorbs green light is provided to the first electrode 11 corresponding to the second overlapping area S21
  • the third The position of the second overlapping area S21 reflects or transmits blue light and red light, and provides the first electrode 11 corresponding to the second overlapping area S22 with a voltage that absorbs the blue light.
  • the position of the second overlapping area S22 reflects or transmits the green light and the red light.
  • the red light provides the first electrode 11 corresponding to the second overlapping area S23 with a voltage that absorbs the green light.
  • the position of the second overlapping area S23 reflects or transmits the blue light and the red light.
  • the energy of the reflected or transmitted red light is greater than that of the green light. and blue energy, thus making the sub-pixel Pi appear red visually.
  • the number of sub-pixels is large, which can make the energy of the corresponding color reflected or transmitted greater than the energy of the absorbed color, making the displayed color more obvious.
  • each sub-pixel includes four overlapping In area S2, the energy difference between the final transmitted or reflected red light and the reflected or transmitted green and blue light energy is greater than the energy difference between each sub-pixel including two overlapping areas S2, making the displayed red color more obvious.
  • the display substrate may include multiple pixel units P, and each pixel unit P may include multiple sub-pixels Pi.
  • the arrangement direction of the plurality of sub-pixels is different from the arrangement direction of at least two adjacent second overlapping areas S2 in each sub-pixel.
  • three sub-pixels P1-P3 in the same pixel unit P are arranged along the second direction Y, and multiple second overlapping areas S2 in each sub-pixel are arranged along the first direction X; such as As shown in Figures 3b and 4b, three sub-pixels P1-P3 in the same pixel unit P are arranged along the first direction X, and multiple second overlapping areas S2 in each sub-pixel are arranged along the second direction Y.
  • each pixel unit P may include three sub-pixels Pi, where i takes values 1, 2, and 3, that is, the first sub-pixel Pixel P1, second sub-pixel P2 and third sub-pixel P3; the number of sub-pixels in each pixel unit may not be limited to three, for example, each pixel unit may include four sub-pixels.
  • each pixel unit includes six adjacent second overlapping areas S2; in the structure shown in Figures 4a-4b, each pixel unit includes nine adjacent second overlapping areas S2. .
  • Figure 5b is a schematic cross-sectional structural diagram of the position A1-A1 in Figure 5a.
  • the display substrate can also include a black matrix layer 15, and the black matrix layer 15 can be disposed on Between the second conductive layer and the nanoparticle layer, or the black matrix layer 15 can be disposed on the side of the nanoparticle layer away from the second conductive layer; the black matrix layer 15 can include multiple black matrix structures 151, and the multiple black matrix layers 15 Set between two adjacent sub-pixels. By isolating two adjacent sub-pixels through the black matrix structure 151, cross-color or color mixing of adjacent sub-pixels can be avoided.
  • the first electrode 11 may be a strip-shaped structure extending in a direction forming a first angle F1 with the first direction X
  • the second electrode 13 may be strip-shaped.
  • the structure extends along a direction forming a second included angle F2 with the first direction X, and the first included angle F1 and the second included angle F2 range from 0° to 180°.
  • Figure 6a is a schematic diagram of the arrangement of the first electrode 11 and the second electrode 13 in Figure 1.
  • the first electrode 11 can be along the The two directions Y extend, and the second electrode 13 may extend along the first direction X, and the first direction X is perpendicular to the second direction Y.
  • the first included angle F1 is 0 degrees
  • the second included angle F2 is 90 degrees.
  • the first electrode 11 extends along a direction forming a first angle F1 with the first direction X
  • the second electrode 13 extends along a direction forming a second angle F1 with the first direction X.
  • the direction of angle F2 extends.
  • the first included angle F1 can be an obtuse angle
  • the second included angle F2 can be an acute angle
  • the first included angle F1 and the second included angle F2 can both be acute angles
  • the first included angle F1 may be an acute angle
  • the second included angle F2 may be an obtuse angle, wherein the angle range of the acute angle may be greater than 0 degrees and less than 90 degrees, and the range of the obtuse angle may be greater than 90 degrees and less than 180 degrees.
  • the angle formed by the orthographic projection of the first electrode 11 on the substrate 10 and the orthographic projection of the second electrode 13 on the substrate 10 can be a right angle; in the structures shown in Figures 6b to 6d, The angle formed by the orthographic projection of the first electrode 11 on the substrate and the orthographic projection of the second electrode 13 on the substrate may be a non-right angle.
  • the first electrode 11 and the second electrode 13 may both be arc-shaped, and the bending direction of the arc of the first electrode 11 is consistent with that of the arc of the second electrode 13 .
  • the bending direction is opposite, and multiple sub-pixels Pi can be arranged along an arc.
  • the arc-shaped bending direction of the first electrode 11 may be bent in the opposite direction to the second direction Y.
  • the center of curvature of the arc-shaped shape of any first electrode 11 is located on the first electrode 11 in the second direction.
  • the arc-shaped bending direction of the second electrode 13 may be bent toward the second direction Y, and the center of curvature of the arc of any second electrode 13 is located on the opposite side of the second electrode 13 in the second direction Y. side.
  • the arc-shaped bending direction of the first electrode 11 may be bent toward the first direction One side; the arc-shaped bending direction of the second electrode 13 may be bent in the opposite direction to the first direction .
  • the first electrode 11 may be formed on the substrate 10 by electron beam evaporation.
  • both the first electrode 11 and the second electrode 13 may be light-transmitting structures.
  • the first electrode 11 is a light-transmitting structure, part of the light incident from the second electrode 13 is absorbed by the nanoparticles and the deformation layer, and the light that is not absorbed by the nanoparticles and the deformation layer 12 can pass through the third electrode 13 .
  • An electrode 11 and a substrate 10 are emitted.
  • the first electrode 11 may have a reflective structure
  • the second electrode 13 may have a light-transmitting structure.
  • the first electrode 11 since the first electrode 11 has a reflective structure, part of the light incident on the second electrode 13 is absorbed by the nanoparticles and the deformation layer, while the light that is not absorbed by the nanoparticles and the deformation layer is absorbed by the first electrode 11 After reflection, it is emitted through the second conductive layer.
  • the above-mentioned display substrate may further include a reflective layer 16 , and the reflective layer 16 is disposed on a side of the substrate 10 away from the first conductive layer.
  • the above-mentioned display substrate may further include a reflective layer 16 and an insulating layer 17 .
  • the reflective layer 16 is disposed between the substrate 10 and the insulating layer 17 .
  • the insulating layer 17 is disposed between the reflective layer 16 and the insulating layer 17 . between the first conductive layers.
  • the reflective layer 16 may be made of metal, for example, the reflective layer 16 may be aluminum.
  • an insulating layer 17 is provided between the reflective layer 16 and the first conductive layer, which can avoid contact with the reflective layer after the first electrode 11 on the first conductive layer is energized. 16 short circuit.
  • the second electrode 13 has a light-transmitting structure
  • the first electrode 11 can have a light-transmitting structure or a reflective structure. Since the reflective layer 16 is provided, the light incident on the second electrode 13 Eventually, they will be reflected by the reflective layer 16 and emitted through the second electrode 13 , so that the color of the reflected light is displayed on the side of the display substrate located on the second electrode 13 .
  • the nanoparticles may be metal nanoparticles, for example, the nanoparticles may be silver (Ag) nanoparticles.
  • the thickness H of the nanoparticles 141 may be 30 nm to 80 nm, and the width W of the nanoparticles 141 may be 45 nm to 65 nm.
  • the nanoparticles 141 are periodically arranged, and the distance L0 between the center positions of two adjacent nanoparticles 141 is 200 nanometers to 400 nanometers.
  • the distance M between the side of the nanoparticles 141 facing the second conductive layer and the side of the first conductive layer facing the deformation layer 12 is 2 nanometers to 20 nanometers.
  • the deformation layer 12 is an electro-activated polymer that can deform when a voltage is applied.
  • the deformation layer 12 can be a dielectric elastomer.
  • the dielectric elastomer can be polyacrylate or silicone rubber ( Silicone rubbers), the dielectric elastomer layer can deposit dielectric elastomer materials (such as polyacrylate materials or silicone rubber materials) on the substrate 10 formed with the first conductive layer through a nano self-assembly process between layers. .
  • embodiments of the present disclosure utilize the light absorption characteristics of nanoparticles and dielectric elastomers, and the thickness of the deformation layer (which can be a dielectric elastomer) is generated after applying a voltage. After the change, the wavelength of the absorbed light is different to reflect or transmit the light of the corresponding color.
  • the following is a combination of simulation model results to illustrate the influencing factors of light reflection or transmission by nanoparticles and dielectric elastomers:
  • the thickness H of the nanoparticles (the size of the nanoparticle 141 along the third direction Z in Figure 2 and Figure 9f) changes in the range of 30 nanometers to 80 nanometers.
  • the change trend of the reflectivity or transmittance calculated by the simulation is shown in Figure 9a. Reflection or transmission can indirectly obtain the light absorption spectrum.
  • the height of the nanoparticle 141 changes in the range of 50 nanometers to 80 nanometers, and the absorption wavelength only changes in a few discrete positions. It can be understood that the thickness of the nanoparticles ranges from 50 nanometers to 80 nanometers. Within, it does not have much impact on the reflectivity/transmittance of light.
  • the reflection or transmittance of light with a wavelength of about 700 nanometers is relatively low (in the range of 0-0.3), and the corresponding absorption rate is relatively large; when the nanoparticle thickness is 30 nanometers to 80 nanometers, the reflection or transmittance of light is relatively low (in the range of 0-0.3).
  • the absorption wavelength is about 630 nanometers (the reflectivity or transmittance is lower, about 0-0.3, and the absorption rate is higher).
  • the width W of the nanoparticles changes in the range of 45 nanometers to 65 nanometers.
  • the simulated reflectivity/transmittance change trend is shown in Figure 9b.
  • the change in the width W of the nanoparticles 141 will affect the absorption wavelength. In the range of nanoparticle width from 45 nanometers to 65 nanometers, as the nanoparticle width increases, the greater the wavelength absorbed. For example, if the nanoparticle width is about 60 nanometers, the absorption wavelength is about 700 nanometers, while the nanoparticle width W is about 45 nanometers, and the absorption wavelength is about 700 nanometers.
  • the width W of the nanoparticle is the size of the nanoparticle 141 along the first direction X
  • the absorption wavelength of the nanoparticles remains basically unchanged, and the absorbed wavelength is about 470 nanometers. to about 530 nanometers.
  • the period of the nanoparticles may be the distance R between the centers of two adjacent nanoparticles.
  • the absorption wavelength of the nanoparticle remains basically unchanged.
  • the absorption wavelength of the nanoparticle is about It is about 620 nanometers to 650 nanometers.
  • the abscissa M is the distance between the nanoparticle 141 and the second electrode 13. in Figure 9f.
  • the value of M is in the range of 4 nanometers to 20 nanometers, and the wavelength value can be achieved from 400 nanometers to 650 nanometers.
  • the absorption of nanometer light can be achieved by applying different voltages to the first electrode 11 and the second electrode 13 to adjust the thickness of the dielectric elastomer, thereby achieving controllable absorption of light in different wavelength ranges to achieve a display substrate. color display.
  • the value of M is basically linearly related to the value of the wavelength of the absorbed light, and in the range of M from 4 nanometers to 20 nanometers, as the value of M increases, the wavelength of the absorbed light increases. The wavelength gradually decreases.
  • the value of M can be determined based on the wavelength range of the three primary colors of red, green and blue light.
  • the wavelength of red light is about 650 nanometers, corresponding to the value of M in Figure 9e, which is about 4 nanometers to 5.2 nanometers; green light
  • the wavelength range is about 532 nanometers, corresponding to the value of M in Figure 9e, which is about 8 nanometers to 10 nanometers;
  • the wavelength range of blue light is about 445 nanometers to 450 nanometers, and the corresponding value of M in Figure 9e is about 18 nanometers to 20 nanometers; and according to In this way, different voltages are applied to the first electrode 11 and the second electrode 13 corresponding to the second overlapping area S2 in the corresponding sub-pixel.
  • the second overlapping area S2 is set to absorb red light.
  • the required voltage is the first voltage U1.
  • the required voltage is the second voltage U2.
  • the required voltage is the third voltage.
  • Voltage U3 since the values of M corresponding to red, green, and blue increase in sequence, the deformation of the corresponding dielectric elastomer also increases, and the required voltage also increases accordingly. Therefore, the first voltage U1, the second The voltage values of voltage U2 and third voltage U3 increase sequentially.
  • the depth of the color in c represents reflection or transmittance.
  • reflectance and transmittance are inversely proportional to absorptivity.
  • the display substrate can be a transmission display or a reflection display.
  • reflection display there are two main destinations for the total energy of the light received by the nanoparticles and the dielectric elastomer: one is the destination of the total energy received by the nanoparticles and the dielectric elastomer.
  • the elastomer absorbs the light, and the other is reflected by at least one of the first electrode 11 and the reflective layer 16 .
  • the reflectivity can be understood as the ratio of the energy of the reflected light to the total energy of the received light.
  • the transmittance can be It is understood as the ratio of the energy of transmitted light to the total energy of received light. Among them, the reflectivity and transmittance range from 0 to 1.
  • the substrate 10 may be made of transparent material, such as transparent glass.
  • the following is an exemplary description through the preparation process of the display substrate.
  • the "patterning process" mentioned in this disclosure includes processes such as coating of photoresist, mask exposure, development, etching, and stripping of photoresist for metal materials, inorganic materials or light-transmitting conductive materials.
  • For organic materials Including processes such as coating of organic materials, mask exposure and development.
  • Deposition can use any one or more of sputtering, evaporation, and chemical vapor deposition.
  • Coating can use any one or more of spraying, spin coating, and inkjet printing.
  • Etching can use dry etching and wet etching. Any one or more of them are not limited by this disclosure.
  • Thin film refers to a thin film produced by depositing, coating or other processes of a certain material on a substrate. If the "thin film” does not require a patterning process during the entire production process, the “thin film” can also be called a “layer.” If the "thin film” requires a patterning process during the entire production process, it will be called a “thin film” before the patterning process and a “layer” after the patterning process. The “layer” after the patterning process contains at least one "pattern”. “A and B are arranged on the same layer” mentioned in this disclosure means that A and B are formed simultaneously through the same patterning process, and the “thickness” of the film layer is the size of the film layer in the direction perpendicular to the display substrate.
  • the orthographic projection of B is within the range of the orthographic projection of A
  • the orthographic projection of A includes the orthographic projection of B means that the boundary of the orthographic projection of B falls within the orthographic projection of A. within the bounds of A, or the bounds of the orthographic projection of A overlap with the bounds of the orthographic projection of B.
  • the preparation process of the display substrate may include the following operations:
  • forming the first conductive layer pattern may include: forming a first conductive film on the substrate 10 , patterning the first conductive film through a patterning process, and forming a first conductive layer disposed on the substrate 10 Pattern, the first conductive layer pattern may include a plurality of first electrodes 11 arranged along the first direction X and extending along the second direction Y, as shown in Figures 10 and 11.
  • Figure 11 is L1- in Figure 10 Schematic diagram of the cross-sectional structure at the L1 position.
  • patterning the first conductive film through a patterning process may include: coating a layer of photoresist on the first conductive film, using a mask to expose and develop the photoresist, and An unexposed area is formed at the position of the first electrode 11, retaining the photoresist, and a fully exposed area without photoresist is formed at the remaining positions; the first conductive film in the fully exposed area is removed through an etching process, and the remaining photoresist is peeled off The first electrode 11 is formed.
  • forming the dielectric elastomer layer may include: depositing a dielectric elastomer material on the substrate 10 forming the foregoing pattern to form a dielectric elastomer layer.
  • 12 is a dielectric elastomer layer.
  • the dielectric elastomer layer 12 may be formed by depositing a dielectric elastomer material on the substrate 10 on which the first conductive layer pattern is formed through a nano-self-assembly process between layers.
  • the nano self-assembly process means that the dielectric elastomer material is spontaneously organized to form a dielectric elastomer layer on the substrate on which the first conductive layer pattern is formed without human interference.
  • forming the second conductive layer pattern may include: depositing a second conductive film on the substrate 10 on which the foregoing pattern is formed, patterning the second conductive film through a patterning process, and forming a pattern disposed on the dielectric elastomer.
  • the second conductive layer pattern on the second conductive layer pattern may include a plurality of second electrodes 13 arranged along the second direction Y and extending along the first direction X, as shown in FIGS. 13 and 14 , FIG. 14 is a schematic cross-sectional structural diagram of the L2-L2 position in Figure 13.
  • patterning the second conductive film through a patterning process may include: coating a layer of photoresist on the second conductive film, using a mask to expose and develop the photoresist, and An unexposed area is formed at the position of the second electrode 13, retaining the photoresist, and a fully exposed area without photoresist is formed at the remaining positions; the second conductive film in the fully exposed area is removed through an etching process, and the remaining photoresist is peeled off The second electrode 13 is formed.
  • a first conductive film may be deposited on the substrate 10 by electron beam evaporation.
  • the first conductive film may be an indium tin oxide semiconductor light-transmitting conductive film.
  • the indium tin oxide may be indium oxide.
  • Tin full name in English is Indium Tin Oxides, abbreviated as ITO).
  • forming the nanoparticle layer may include: coating nanoparticles on the substrate 10 with the foregoing pattern by spot spin coating to form the nanoparticle layer 14 .
  • the nanoparticles 141 may be metal nanoparticles, such as silver (Ag) nanoparticles.
  • Figure 15 shows a schematic cross-sectional structural diagram at the L3-L3 position in Figure 14.
  • forming the nanoparticle layer may further include drying the nanoparticle layer in a nitrogen environment.
  • the above-mentioned first conductive film may be a light-transmitting conductive film, for example, it may be an indium tin oxide semiconductor light-transmitting conductive film, and the indium tin oxide may be indium tin oxide (English full name Indium Tin Oxides, abbreviated as ITO); in another exemplary embodiment, the above-mentioned first conductive film can be a reflective conductive film, for example, it can be a metal conductive film, and the metal can be one of gold, silver, and aluminum.
  • the first conductive film and the second conductive film are both light-transmissive conductive films, and the resulting first electrode and the second electrode are both light-transmissive structures, and a transmissive display substrate can be prepared.
  • the second conductive film is a light-transmitting conductive film
  • the first conductive film is a reflective conductive film
  • a reflective display substrate can be prepared.
  • the above step (11) may also include: forming a reflective layer on the side of the substrate 10 away from the first conductive layer, and the reflective layer may be a metal, such as aluminum; or in the above step (11) Before 11), it may also include: forming a reflective layer and an insulating layer between the substrate 10 and the first conductive layer.
  • the reflective layer may be metal, for example, aluminum.
  • a reflective display substrate is formed after preparing a reflective layer on the substrate 10 .
  • the transmissive display substrate displays a picture on the side of the display substrate away from the incident light, that is, one side of the display substrate absorbs the light through the dielectric elastomer layer, and then the light is absorbed by the other side of the display substrate.
  • One side of the display substrate emits light to form a display screen; reflective display substrate, the display screen is on the side of the display substrate facing the incident light, that is, the side of the display substrate that is incident on the light absorbs the light through the dielectric elastomer layer, and then the light is absorbed by the dielectric elastomer layer. After reflection by the reflective layer or the first electrode, the light is emitted from the side where the light is incident to form a display screen.
  • it may also include: forming a black matrix layer 15 on the substrate 10 on which the second conductive layer pattern is formed, and the black matrix layer includes a plurality of black matrix structures 151, such as As shown in Figure 5a and Figure 5b.
  • the total thickness of the first conductive layer, the deformation layer, the second conductive layer, and the nanoparticle layer in the display substrate i.e., the first conductive layer, the deformation layer, the second conductive layer, and the nanoparticle layer in Figure 16
  • the sum of dimensions Z along the third direction does not exceed 200 nanometers, which can make the display substrate thin and light enough.
  • An embodiment of the present disclosure also provides a display device, which may include the display substrate described in any of the above embodiments.
  • the display device may be a product or component with a display function such as a mobile phone, computer, television (TV), medical monitoring device, vehicle central control device, monitor, notebook computer, digital photo frame, navigation device, etc.
  • a display function such as a mobile phone, computer, television (TV), medical monitoring device, vehicle central control device, monitor, notebook computer, digital photo frame, navigation device, etc.
  • Embodiments of the present disclosure also provide a driving method for a display substrate, which drives the display substrate described in any of the above embodiments.
  • the driving method may include: applying different voltages to a plurality of first electrodes and a plurality of second electrodes, so that the The deformation layer between the first electrode and the second electrode produces different degrees of deformation.
  • An embodiment of the present disclosure also provides a method for preparing a display substrate, which may include:
  • a first conductive layer is formed on one side of the substrate, and the first conductive layer includes a plurality of first electrodes arranged in parallel;
  • a second conductive layer is formed on a side of the deformation layer away from the first conductive layer, and the second conductive layer includes a plurality of second electrodes arranged in parallel;
  • a nanoparticle layer is formed on the side of the second conductive layer away from the deformation layer, and the nanoparticle layer includes a plurality of nanoparticles;
  • the display substrate includes a plurality of sub-pixels defined by intersections of first electrodes and second electrodes; orthographic projections of the plurality of first electrodes and the plurality of second electrodes on the substrate have a plurality of first overlapping areas, and any one of the first overlapping areas A second overlapping area exists between the area and the orthographic projection of at least one nanoparticle on the substrate; the orthographic projection of each sub-pixel on the substrate at least partially overlaps with at least two adjacent second overlapping areas.
  • an electron beam evaporation process is used to form the first electrode on the substrate.
  • a nano self-assembly process is used to form a deformation layer on a side of the first conductive layer away from the substrate.
  • a nanoparticle layer is formed on a side of the second conductive layer away from the deformation layer using a spot spin coating process.
  • the display substrate, its driving method, preparation method, and display device provided by embodiments of the present disclosure include a first conductive layer, a deformation layer, a second conductive layer, and a nanoparticle layer stacked on a substrate.
  • the first conductive layer includes a plurality of The first electrode
  • the second conductive layer includes a plurality of second electrodes
  • the orthographic projections of the plurality of first electrodes and the plurality of second electrodes on the substrate have a plurality of first overlapping areas, and any first overlapping area has a relationship with at least one nanometer
  • the orthographic projection of the particles on the substrate has a second overlapping area; the orthographic projection of each sub-pixel on the display substrate on the substrate at least partially overlaps with at least two adjacent second overlapping areas.
  • the display substrate provided by the embodiments of the present disclosure is simple to prepare and relatively thin and light, overcoming the problems of complex preparation processes and low ultra-thinness of existing display panels.

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Abstract

一种显示基板及其驱动方法、制备方法、显示装置，显示基板包括基底(10)，以及叠设在基底(10)上的第一导电层、形变层(12)、第二导电层和纳米粒子层(14)；第一导电层包括多个第一电极(11)，第二导电层包括多个第二电极(13)，纳米粒子层(14)包括多个纳米粒子(141)；显示基板包括由多个第一电极(11)和多个第二电极(13)交叉限定的多个子像素(Pi)；多个第一电极(11)和多个第二电极(13)在基底(10)上的正投影存在多个第一重叠区域(S1)，任意一个第一重叠区域(S1)与至少一个纳米粒子(141)在基底(10)上的正投影存在第二重叠区域(S2)；每个子像素(Pi)在基底(10)上的正投影与相邻的至少两个第二重叠区域(S2)至少部分重叠。可以通过调整第一电极(11)和第二电极(13)之间的电压来改变纳米粒子(141)对光线的吸收波长，实现显示基板的彩色显示。

Description

显示基板及其驱动方法、制备方法、显示装置 技术领域
本公开实施例涉及但不限于显示技术领域，尤其涉及一种显示基板及其驱动方法、制备方法、显示装置。
背景技术
近年来，显示面板在手机、电脑、电视机(TV)、医疗监控装置、车载中控装置等具有显示功能的产品上得到了广泛的应用，随着显示技术的发展，对显示面板的体积、轻薄等特性的要求也越来越高。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本公开实施例提供了一种显示基板，包括基底，以及叠设在所述基底上的第一导电层、形变层、第二导电层和纳米粒子层；
所述第一导电层包括多个第一电极，所述第二导电层包括多个第二电极，所述纳米粒子层包括多个纳米粒子；所述显示基板包括由所述多个第一电极和所述多个第二电极交叉限定的多个子像素；
所述多个第一电极和所述多个第二电极在所述基底上的正投影存在多个第一重叠区域，任意一个所述第一重叠区域与至少一个所述纳米粒子在所述基底上的正投影存在第二重叠区域；
每个子像素在所述基底上的正投影与相邻的至少两个所述第二重叠区域至少部分重叠。
在示例性实施方式中，每个子像素在所述基底上的正投影与相邻的两个所述第二重叠区域至少部分重叠；或者，每个子像素在所述基底上的正投影与相邻的三个所述第二重叠区域至少部分重叠。
在示例性实施方式中，所述显示基板包括多个像素单元，每个像素单元包括多个所述子像素，在同一个像素单元中，多个子像素的排布方向与每个子像素中相邻的至少两个第二重叠区域的排布方向不同。
在示例性实施方式中，上述显示基板还包括黑矩阵层，所述黑矩阵层设置于所述第二导电层和所述纳米粒子层之间，或者所述黑矩阵层设置于所述纳米粒子层远离所述第二导电层的一侧；
所述黑矩阵层包括多个黑矩阵结构，所述多个黑矩阵结构设置于相邻两个子像素之间。
在示例性实施方式中，在显示基板所在平面内，所述第一电极为条状结构，沿与第一方向呈第一夹角的方向延伸，所述第二电极为条状结构，沿与第一方向呈第二夹角的方向延伸，所述第一夹角和所述第二夹角取值范围为0°至180°。
在示例性实施方式中，在显示基板所在平面内，所述第一电极沿第二方向延伸，所述第二电极沿第一方向延伸，所述第一方向与所述第二方向垂直。
在示例性实施方式中，所述第一电极和所述第二电极均为弧形，所述第一电极的弧形的弯曲方向与所述第二电极的弧形的弯曲方向相反，所述多个子像素沿所述弧形排布。
在示例性实施方式中，所述第一电极通过电子束蒸镀方式形成在所述基底上。
在示例性实施方式中，所述第一电极和所述第二电极均为透光结构。
在示例性实施方式中，所述第一电极为反光结构，所述第二电极为透光结构。
在示例性实施方式中，上述显示基板还包括反射层，所述反射层设置于所述基底远离所述第一导电层的一侧。
在示例性实施方式中，上述显示基板还包括反射层和绝缘层，所述反射层设置于所述基底与所述绝缘层之间，所述绝缘层设置于所述反射层和所述第一导电层之间。
在示例性实施方式中，所述纳米粒子为银纳米粒子。
在示例性实施方式中，所述纳米粒子的厚度为30纳米至80纳米，所述纳米粒子的宽度为45纳米至65纳米。
在示例性实施方式中，所述形变层的材质为聚丙烯酸酯或者硅树脂橡胶。
在示例性实施方式中，所述纳米粒子呈周期排布，相邻两个纳米粒子中心位置之间的距离为200纳米至400纳米。
在示例性实施方式中，所述纳米粒子朝向所述第二导电层的一侧与所述第一导电层朝向所述形变层的一侧之间的距离为2纳米至20纳米。
本公开实施例还提供一种显示装置，包括上述任一实施例所述的显示基板。
本公开实施例还提供一种显示的驱动方法，驱动上述任一项实施例所述的显示基板，包括：给多个第一电极和多个第二电极施加不同电压，使位于所述第一电极和所述第二电极之间的形变层产生不同程度的形变。
本公开实施例还提供一种显示的制备方法，包括：
在基底的一侧形成第一导电层，所述第一导电层包括多个平行排布的第一电极；
在所述第一导电层远离所述基底的一侧形成形变层；
在所述形变层远离所述第一导电层的一侧形成第二导电层，所述第二导电层包括多个平行排布的第二电极；
在所述第二导电层远离所述形变层的一侧形成纳米粒子层，所述纳米粒子层包括多个纳米粒子；
其中，所述显示基板包括由所述第一电极和所述第二电极交叉限定的多个子像素；所述多个第一电极和所述多个第二电极在所述基底上的正投影存在多个第一重叠区域，任意一个所述第一重叠区域与至少一个所述纳米粒子在所述基底上的正投影存在第二重叠区域；每个子像素在所述基底上的正投影与相邻的至少两个所述第二重叠区域至少部分重叠。
在示例性实施方式中，在所述基底上采用电子束蒸镀工艺形成所述第一电极。
在示例性实施方式中，在所述第一导电层远离所述基底的一侧采用纳米自组装工艺形成所述形变层。
在示例性实施方式中，在所述第二导电层远离所述形变层的一侧采用点旋涂工艺形成所述纳米粒子层。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
附图用来提供对本公开技术方案的进一步理解，并且构成说明书的一部分，与本公开的实施例一起用于解释本公开的技术方案，并不构成对本公开技术方案的限制。附图中每个部件的形状和大小不反映真实比例，目的只是示意说明本公开内容。
图1所示为本公开实施例提供的显示基板的平结构示意图；
图2所示为图1中A-A位置的剖面结构示意图；
图3a所示为本公开示例性实施例提供的一种在显示基板的一种平结构示意图；
图3b所示为本公开示例性实施例提供的一种在显示基板的一种平结构示意图；
图3c所示为本公开示例性实施例提供的一种在显示基板一个子像素位置的剖面结构示意图；
图4a所示为本公开示例性实施例提供的一种在显示基板的一种平结构示意图；
图4b所示为本公开示例性实施例提供的一种在显示基板的一种平结构示意图；
图4c所示为本公开示例性实施例提供的一种在显示基板一个子像素位置的剖面结构示意图；
图5a所示为本公开示例性实施例提供的一种显示基板的平面结构示意图；
图5b所示为图5a中A1-A1位置的剖面结构示意图；
图6a所示为本公开示例性实施例提供的一种第一电极和第二电极的排布方式示意图；
图6b所示为本公开示例性实施例提供的一种第一电极和第二电极的排布方式示意图；
图6c所示为本公开示例性实施例提供的一种第一电极和第二电极的排布方式示意图；
图6d所示为本公开示例性实施例提供的一种第一电极和第二电极的排布方式示意图；
图6e所示为本公开示例性实施例提供的一种第一电极和第二电极的排布方式示意图；
图6f所示为本公开示例性实施例提供的一种第一电极和第二电极的排布方式示意图；
图7所示为本公开示例性实施例提供的一种显示基板的剖面结构示意图；
图8所示为本公开示例性实施例提供的一种显示基板的剖面结构示意图；
图9a所示为本公开示例性实施例提供的反射/透射光线波长与纳米粒子厚度的关系图；
图9b所示为本公开示例性实施例提供的反射/透射光线波长与纳米粒子宽度之间的关系示意图；
图9c所示为本公开示例性实施例提供的反射/透射光线波长与纳米粒子周期之间的关系示意图；
图9d所示为本公开示例性实施例提供的反射/透射光线波长与光线入射角度之间的关系示意图；
图9e所示为本公开示例性实施例提供的反射/透射光线波长与纳米粒子到第一电极之间距离M之间的关系示意图；
图9f所示为本公开示例性实施例提供的一种显示基板的剖面结构示意图；
图10所示为本公开示例性实施例提供的一种形成第一导电层图案的平面结构示意图；
图11所示图10中L1-L1位置的剖面结构示意图；
图12所示为本公开示例性实施例提供的一种形成电介弹性体层的剖面结构示意图；
图13所示为本公开示例性实施例提供的一种形成第二导电层图案的平面结构示意图；
图14所示图13中L2-L2位置的剖面结构示意图；
图15所示为本公开示例性实施例提供的一种形成纳米粒子层的平面结构示意图；
图16所示图15中L3-L3位置的剖面结构示意图。
具体实施方式
下文中将结合附图对本公开的实施例进行详细说明。实施方式可以以多个不同形式来实施。所属技术领域的普通技术人员可以很容易地理解一个事实，就是方式和内容可以在不脱离本公开的宗旨及其范围的条件下被变换为各种各样的形式。因此，本公开不应该被解释为仅限定在下面的实施方式所记载的内容中。在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互任意组合。为了保持本公开实施例的以下说明清楚且简明，本公开省略了部分已知功能和已知部件的详细说明。本公开实施例附图只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计
本公开中的附图比例可以作为实际工艺中的参考，但不限于此。例如：每个膜层的厚度和间距、每个信号线的宽度和间距，可以根据实际情况进行调整。本公开中所描述的附图仅是结构示意图，本公开的一个方式不局限于附图所示的形状或数值等。
本说明书中的“第一”、“第二”、“第三”等序数词是为了避免构成要素的混同而设置，而不是为了在数量方面上进行限定的。
在本说明书中，为了方便起见，使用“中部”、“上”、“下”、“前”、“后”、 “竖直”、“水平”、“顶”、“底”、“内”、“外”等指示方位或位置关系的词句以参照附图说明构成要素的位置关系，仅是为了便于描述本说明书和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。构成要素的位置关系根据描述每个构成要素的方向适当地改变。因此，不局限于在说明书中说明的词句，根据情况可以适当地更换。
在本说明书中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解。例如，可以是固定连接，或可拆卸连接，或一体地连接；可以是机械连接，或电连接；可以是直接相连，或通过中间件间接相连，或两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本公开中的具体含义。
在本说明书中，“电连接”包括构成要素通过具有某种电作用的元件连接在一起的情况。“具有某种电作用的元件”只要可以进行连接的构成要素间的电信号的授受，就对其没有特别的限制。“具有某种电作用的元件”的例子不仅包括电极和布线，而且可以包括晶体管等开关元件、电阻器、电感器、电容器、其它具有一种或多种功能的元件等。
在本说明书中，“平行”是指两条直线形成的角度为-10°以上且10°以下的状态，因此，可以包括该角度为-5°以上且5°以下的状态。另外，“垂直”是指两条直线形成的角度为80°以上且100°以下的状态，因此，可以包括85°以上且95°以下的角度的状态。
在本说明书中，“膜”和“层”可以相互调换。例如，有时可以将“导电层”换成为“导电膜”。与此同样，有时可以将“绝缘膜”换成为“绝缘层”。
本说明书中三角形、矩形、梯形、五边形或六边形等并非严格意义上的，可以是近似三角形、矩形、梯形、五边形或六边形等，可以存在公差导致的一些小变形，可以存在导角、弧边以及变形等。
本公开中的“约”，是指不严格限定界限，允许工艺和测量误差范围内的数值。
本公开中的“厚度”为膜层在垂直于基底方向上的尺寸。
显示面板的轻薄程度是衡量显示面板特性的一个重要指标，目前显示领域的主流产品包括有机发光二极管(Organic Light Emitting Diode，简称OLED)显示器件和液晶显示装置(Liquid Crystal Display，简称LCD)，OLED显示器件和LCD均需要通过薄膜晶体管阵列(Thin Film Transistor，简称TFT)进行信号控制，薄膜晶体管阵列可以设置于一个基板上，称简为TFT阵列基板，由于TFT阵列基板涉及到多个膜层的制备，制备工艺比较复杂，而且多个膜层具有一定的厚度，导致OLED显示器件和LCD的厚度比较厚，因此，显示面板的超薄程度不高。
本公开实施例提供一种显示基板，可以包括基底，以及叠设在基底上的第一导电层、形变层、第二导电层和纳米粒子层；
第一导电层可以包括多个第一电极，第二导电层可以包括多个第二电极，纳米粒子层可以包括多个纳米粒子；显示基板包括由多个第一电极和多个第二电极交叉限定的多个子像素；
多个第一电极和多个第二电极在基底上的正投影存在多个第一重叠区域，任意一个第一重叠区域与至少一个纳米粒子在基底上的正投影存在第二重叠区域；
每个子像素在基底上的正投影与相邻的至少两个第二重叠区域至少部分重叠。
本公开实施例提供的显示基板，包括叠设在基底上的第一导电层、形变层、第二导电层、纳米粒子层，第一导电层包括多个第一电极，第二导电层包括多个第二电极，多个第一电极和多个第二电极在基底上的正投影存在多个第一重叠区域，任意一个第一重叠区域与至少一个纳米粒子在基底上的正投影存在第二重叠区域；显示基板上的每个子像素在基底上的正投影与相邻的至少两个第二重叠区域至少部分重叠。本公开实施例提供的显示基板制备简单、且比较轻薄，克服现有显示面板存在制备工艺复杂、超薄程度不高的问题。
在本公开实施例中，第一电极和第二电极施加电压后可以对第二重叠区域所对应的形变层施加压力，改变第二重叠区域对应的形变层的厚度，从而改变第二重叠区域所对应的纳米粒子与第一电极之间的间距，进而改变纳米 粒子对光的吸收波长，因此可以通过调整第一电极与第二电极之间的电压来改变对光线的吸收，实现显示基板的彩色显示。本公开实施例提供的显示基板可以不必制备TFT阵列基板，工艺简单且轻薄程度高。
在本公开实施例中，纳米粒子与形变层、第一电极构成具有吸收特性的结构，吸收的光的能量可以被局域在纳米粒子与第一电极之间的形变层中，利用纳米粒子、形变层、第一电极的光吸收特性，以及吸收不同波长的光与纳米粒子与第一电极之间的距离相关的特性，通过对第一电极和第二电极施加不同的电压改变形变层的厚度，从而改变纳米粒子和形变层对不同波长光的吸收，从而实现对不同颜色光线的反射或透射。
在示例性实施方式中，如图1和图2所示，图2所示为图1中A-A位置的剖面结构示意图，显示基板可以包括基底10，以及叠设在基底10上的第一导电层、形变层12、第二导电层和纳米粒子层14；
第一导电层可以包括多个第一电极11，第二导电层可以包括多个第二电极13，纳米粒子层14可以包括多个纳米粒子141；显示基板可以包括由多个第一电极11和多个第二电极13交叉限定的多个子像素Pi；
多个第一电极11和多个第二电极13在基底10上的正投影存在多个第一重叠区域S1，任意一个第一重叠区域S1与至少一个纳米粒子141在基底10上的正投影存在第二重叠区域S2；
每个子像素Pi在基底10上的正投影与相邻的至少两个第二重叠区域S2至少部分重叠。
在示例性实施方式中，如图3a和3b所示，每个子像素在基底10上的正投影与相邻的两个第二重叠区域S2至少部分重叠。
在图3a和图3b所示结构中，发光原理如图3c所示，每个子像素Pi由两个第二重叠区域S21和S22所对应的纳米粒子141、第一电极11、第二电极13以及形变层12控制吸收对应波长的光线，实现反射或透射相应颜色的光，以实现显示基板的彩色显示。例如，图3c所示子像素在反射或透射红色光线的情况下，第二重叠区域S21可以设置为吸收绿色光线、第二重叠区域S22可以设置为吸收蓝色光线，显示基板显示红色光线(反射显示或者透射显示)给第二电极13提供一定电压的情况下，给第二重叠区域S21对应的 第一电极11提供吸收绿色光线的电压，则第二重叠区域S21的位置反射或透射蓝色光线和红色光线，给第二重叠区域S22对应的第一电极11提供吸收蓝色光线的电压，则第二重叠区域S22的位置反射或透射绿色光线和红色光线，反射或透射的红色光线的能量大于绿色和蓝色的能量，从而使得子像素Pi在视觉效果上显示红色。
在另一种实施方式中，如图4a和图4b所示，每个子像素在基底10上的正投影与相邻的三个第二重叠区域S2至少部分重叠。
在图4a和图4b所示结构中，发光原理如图4c所示，每个子像素Pi由三个第二重叠区域S21、S22、S23所对应的纳米粒子141、第一电极11、第二电极13以及形变层12控制吸收对应波长的光线，实现反射或透射相应颜色的光，以实现显示基板的彩色显示。例如，图4c所示子像素在反射或透射红色光线的情况下，第二重叠区域S21可以设置为吸收绿色光线、第二重叠区域S22可以设置为吸收蓝色光线、第二重叠区域S23可以设置为吸收绿色光线，显示基板显示红色光线(反射显示或者透射显示)给第二电极13提供一定电压的情况下，给第二重叠区域S21对应的第一电极11提供吸收绿色光线的电压，则第二重叠区域S21的位置反射或透射蓝色光线和红色光线，给第二重叠区域S22对应的第一电极11提供吸收蓝色光线的电压，则第二重叠区域S22的位置反射或透射绿色光线和红色光线，给第二重叠区域S23对应的第一电极11提供吸收绿色光线的电压，则第二重叠区域S23的位置反射或透射蓝色光线和红色光线，反射或透射的红色光线的能量大于绿色和蓝色的能量，从而使得子像素Pi在视觉效果上显示红色。在图4c所述像素单元中，子像素数量较多，可以使得反射或透射相应颜色的能量大于吸收颜色的能量，使得显示的颜色更明显，以显示红色为例，每个子像素包括四个重叠区域S2，最终透射或反射的红色光线的能量与反射或透射绿色和蓝色光能量的差值，要大于每个子像素包括两个重叠区域S2的能量差值，使得显示的红色更加明显。
在示例性实施方式中，如图3a-3b、图4a-4b所示，显示基板包括可以多个像素单元P，每个像素单元P可以包括多个子像素Pi，在同一个像素单元P中，多个子像素的排布方向与每个子像素中相邻的至少两个第二重叠区域 S2的排布方向不同。如图3a和图4a所示，同一个像素单元P中的三个子像素P1-P3沿第二方向Y排布，每个子像素中多个第二重叠区域S2沿第一方向X排布；如图3b和图4b所示，同一个像素单元P中的三个子像素P1-P3沿第一方向X排布，每个子像素中的多个第二重叠区域S2沿第二方向Y排布。
在本公开示例性实施方式中，如图3a-3b、图4a-4b所示，每个像素单元P中可以包括三个子像素Pi，其中i取值为1、2、3，即第一子像素P1、第二子像素P2和第三子像素P3；每个像素单元中的子像素数量可以不限于三个，例如，每个像素单元中可以包括四个子像素。在图3a-3b所示结构中，每个像素单元包括相邻的六个第二重叠区域S2；在4a-4b所示结构中，每个像素单元包括九个相邻的第二重叠区域S2。
在本公开示例性实施方式中，如图5a和图5b所示，图5b为图5a中A1-A1位置的剖面结构示意图，显示基板还可以包括黑矩阵层15，黑矩阵层15可以设置于第二导电层和纳米粒子层之间，或者黑矩阵层15可以设置于纳米粒子层远离第二导电层的一侧；黑矩阵层15可以包括多个黑矩阵结构151，多个黑矩阵层15设置于相邻两个子像素之间。通过黑矩阵结构151将相邻的两个子像素隔离，可以避免相邻子像素串色或混色。
在示例性实施方式中，如图6a至图6d所示，第一电极11可以为条状结构，沿与第一方向X呈第一夹角F1的方向延伸，第二电极13可以为条状结构，沿与第一方向X呈第二夹角F2的方向延伸，第一夹角F1和第二夹角F2取值范围为0°至180°。
在示例性实施方式中，如图1和图6a所示，图6a为图1中第一电极11和第二电极13的排布示意图，在显示基板所在平面内，第一电极11可以沿第二方向Y延伸，第二电极13可以沿第一方向X延伸，第一方向X与第二方向Y垂直。在图6a所示结构中，第一夹角F1为0度，第二夹角F2为90度。
在示例性实施方式中，如图6b至图6d所示，第一电极11沿与第一方向X呈第一夹角F1的方向延伸，第二电极13沿与第一方向X成第二夹角F2的方向延伸。如图6b所示，第一夹角F1可以为钝角，第二夹角F2可以为 锐角；如图6c所示，第一夹角F1和第二夹角F2可以均为锐角；如图6d所示，第一夹角F1可以为锐角，第二夹角F2可以为钝角，其中，锐角的角度范围可以为大于0度、小于90度，钝角的范围可以为大于90度、小于180度。
在图6a所示结构中，第一电极11在基底10上的正投影与第二电极13在基底10上的正投影所成的夹角可以为直角；在6b至图6d所示结构中，第一电极11在基底上的正投影与第二电极13在基底上的正投影所成的夹角可以为非直角。
在示例性实施方式中，如图6e和图6f所示，第一电极11和第二电极13可以均为弧形，第一电极11的弧形的弯曲方向与第二电极13的弧形的弯曲方向相反，多个子像素Pi可以沿弧形排布。例如，在图6e中，第一电极11的弧形的弯曲方向可以为朝向第二方向Y的反方向弯曲，任意一个第一电极11的弧形的曲率中心位于第一电极11在第二方向Y的一侧；第二电极13的弧形的弯曲方向可以为朝向第二方向Y弯曲，任意一个第二电极13的弧形的曲率中心位于第二电极13在第二方向Y反方向的一侧。在图6f中，第一电极11的弧形的弯曲方向可以为朝向第一方向X弯曲，任意一个第一电极11的弧形的曲率中心位于第一电极11在第一方向X的反方向的一侧；第二电极13的弧形的弯曲方向可以为朝向第一方向X的反方向弯曲，任意一个第二电极13的弧形的曲率中心位于第二电极13在第一方向X的一侧。
在示例性实施方式中，第一电极11可以通过电子束蒸镀方式形成在基底10上。
在示例性实施方式中，第一电极11和第二电极13可以均为透光结构。在该种结构中，由于第一电极11为透光结构，由第二电极13入射的光线中一部分光线被纳米粒子和形变层吸收，而未被纳米粒子和形变层12吸收的光可以经第一电极11、基底10射出。
在示例性实施方式中，第一电极11可以为反光结构，第二电极13可以为透光结构。在该种结构中，由于第一电极11为反光结构，由第二电极13入射的光线中一部分光线被纳米粒子和形变层吸收，而未被纳米粒子和形变层吸收的光由第一电极11反射后经第二导电层射出。
在示例性实施方式中，如图7所示，上述显示基板还可以包括反射层16，反射层16设置于基底10远离第一导电层的一侧。
在示例性实施方式中，如图8所示，上述显示基板还可以包括反射层16和绝缘层17，反射层16设置于基底10与绝缘层17之间，绝缘层17设置于反射层16和第一导电层之间。
在示例性实施方式中，反射层16可以为金属材质，例如，反射层16可以为铝。在示例性实施方式中，在如图8所示的结构中，反射层16与第一导电层之间设置绝缘层17，可以避免在第一导电层上的第一电极11通电后与反射层16短路。
在图7和图8所示结构中，第二电极13为透光结构，第一电极11可以为透光结构或者为反光结构，由于设有反射层16，因此由第二电极13入射的光线最终都会被反射层16反射后经第二电极13射出，从而在显示基板位于第二电极13的一侧显示反射光线的颜色。
在示例性实施方式中，纳米粒子可以为金属纳米粒子，例如，纳米粒子可以为银(Ag)纳米粒子。
在示例性实施方式中，如图9f所示，纳米粒子141的厚度H可以为30纳米至80纳米，纳米粒子141的宽度W可以为45纳米至65纳米。
在示例性实施方式中，如图7所示，纳米粒子141呈周期排布，相邻两个纳米粒子141中心位置之间的距离L0为200纳米至400纳米。
在示例性实施方式中，如图9f所示，纳米粒子141朝向第二导电层的一侧与第一导电层朝向形变层12的一侧之间的距离M为2纳米至20纳米。
在示例性实施方式中，形变层12加上电压即可出现形变的电激活聚合物，形变层12可以为电介弹性体，电介弹性体可以采用聚丙烯酸酯(polyacrylate)或者硅树脂橡胶(Silicone rubbers)，电介弹性体层可以通过层与层之间的纳米自组装工艺将电介质弹性体材料(如聚丙烯酸酯材料或者硅树脂橡胶材料)沉积在形成有第一导电层的基底10上。
由于光的三原色包括红、绿、蓝，不同颜色的光波长不同，本公开实施例利用纳米粒子与电介弹性体的吸光特性，以及形变层(可以为电介弹性体) 施加电压后厚度产生变化后吸收光线的波长不同，来实现反射或透射相应颜色的光线。下面结合仿真模型结果来说明纳米粒子和电介弹性体反射或透射光线的影响因素：
(1)纳米粒子的厚度H对反射或透射光线的影响。
纳米粒子的厚度H(图2和图9f中纳米粒子141沿第三方向Z的尺寸)在30纳米至80纳米范围内变化，仿真计算的反射率或透射率变化趋势如图9a所示，通过反射或透射可以间接获得光线吸收频谱，纳米粒子141的高度在50纳米至80纳米范围变化，吸收波长只在离散的几个位置有变化，可以理解为，纳米粒子厚度在50纳米至80纳米范围内，对光线的反射率/透射率没有太大的影响。
例如，纳米粒子厚度H为48纳米左右时，波长在700纳米左右的光线的反射或透射率比较低(在0-0.3范围内)，对应吸收率比较大；在纳米粒子厚度为30纳米至80纳米的范围内，吸收波长630纳米左右(反射率或透过率较低，约为0-0.3左右，则吸收率较高)。
(2)纳米粒子的宽度W对反射或透射光线的影响。
纳米粒子的宽度W在45纳米至65纳米范围内变化，仿真计算的反射率/透射率变化趋势如图9b所示，纳米粒子141宽度W变化会影响吸收波长。在纳米粒子宽度为45纳米至65纳米的范围内，随着纳米粒子宽度的增加，吸收的波长越大。例如，纳米粒子宽度为60纳米左右，吸收波长约为700纳米左右，而纳米粒子宽度W为45纳米左右，吸收波长约为700纳米左右。
在示例性实施方式中，如图9f所示，纳米粒子的宽度W为纳米粒子141沿第一方向X的尺寸
(3)纳米粒子周期对反射或透射光线的影响。
如图9c所示，为纳米粒子的周期在200纳米至400纳米范围内变化，仿真计算得出的反射率或透射率变化趋势，纳米粒子吸收波长基本保持不变，吸收的波长约为470纳米至530纳米左右。
在示例性实施方式中，如图9f所示，纳米粒子的周期可以为相邻两个纳米粒子的中心的距离R。
(4)光线入射角度J对反射或透射光线的影响。
如图9d所示，光线入射角度J在0°(即光线入射角度垂直于纳米粒子的表面)至60°范围内，纳米粒子吸收波长基本保持不变，如图9c所示纳米粒子吸收波长约为620纳米至650纳米左右。
(5)纳米粒子与第二电极13之间的距离M对反射或透射光线的影响。
如图9e所示，横坐标M为图9f中纳米粒子141与第二电极13.之间的距离，M取值在4纳米至20纳米范围内，可实现对波长取值为400纳米至650纳米光线的吸收，可以通过对第一电极11与第二电极13施加不同的电压，来调整电介弹性体的厚度，从而可以实现对不同波长范围的光线进行可控制的吸收，以实现显示基板的彩色显示。如图9e所示，M的取值与吸收光线波长的取值基本成线性关系，并且，在M取值为4纳米至20纳米的范围内，随着M取值的增大，吸收光线的波长成逐渐减小的趋势。
在本公开实施例中，可以根据红绿蓝三原色光的波长范围确定M的取值，红光波长约为650纳米左右，对应图9e中M取值约为4纳米至5.2纳米左右；绿光波长范围在532纳米左右，对应图9e中M取值约为8纳米至10纳米；蓝光波长范围在445纳米至450纳米左右，对应图9e中M取值约为18纳米至20纳米；并根据此来对相应子像素中第二重叠区域S2对应的第一电极11和第二电极13施加不同的电压，例如，根据子像素显示情况，在设置第二重叠区域S2吸收红色光线的情况下所需电压为第一电压U1，在设置第二重叠区域S2吸收绿色光线的情况下所需电压为第二电压U2，在设置第二重叠区域S2吸收蓝色光线的情况下所需电压为第三电压U3，由于红、绿、蓝所对应的M取值依次增大，对应的电介弹性体产生的变形也增大，所需要的电压也相应增大，因此，第一电压U1、第二电压U2、第三电压U3的电压值依次增大。
在图9a至图9e中，c中颜色的深浅代表反射或透射率，本公开实施例中反射率和透射率与吸收率成反比，例如，在图9a至图9e中，反射率/透射率约高，则代表吸收率越低，如果反射率/透射率越低，则代表吸收率越高。在本公开实施例中，显示基板可以为透射显示或者为反射显示，反射显示情况下，纳米粒子与电介弹性体接收光线总能量的去向主要有两种：一种是被 纳米粒子与电介弹性体吸收，另一种是被第一电极11、反射层16中的至少一种反射，反射率可以理解为反射光线的能量与接收光线的总能量的比值。透射显示情况下，纳米粒子与电介弹性体接收光线总能量的去向主要有两种：一种是被纳米粒子与电介弹性体吸收，另一种是经第一电极11射出，透射率可以理解为透射光线的能量与接收光线的总能量的比值。其中，反射率和透射率取值范围为0至1。
在本公开实施例中，基底10可以采用透明材质，例如可以采用透明玻璃。
下面通过显示基板的制备过程进行示例性说明。本公开所说的“图案化工艺”，对于金属材料、无机材料或透光导电材料，包括涂覆光刻胶、掩模曝光、显影、刻蚀、剥离光刻胶等处理，对于有机材料，包括涂覆有机材料、掩模曝光和显影等处理。沉积可以采用溅射、蒸镀、化学气相沉积中的任意一种或多种，涂覆可以采用喷涂、旋涂和喷墨打印中的任意一种或多种，刻蚀可以采用干刻和湿刻中的任意一种或多种，本公开不做限定。“薄膜”是指将某一种材料在基底上利用沉积、涂覆或其它工艺制作出的一层薄膜。若在整个制作过程当中该“薄膜”无需图案化工艺，则该“薄膜”还可以称为“层”。若在整个制作过程当中该“薄膜”需图案化工艺，则在图案化工艺前称为“薄膜”，图案化工艺后称为“层”。经过图案化工艺后的“层”中包含至少一个“图案”。本公开所说的“A和B同层设置”是指，A和B通过同一次图案化工艺同时形成，膜层的“厚度”为膜层在垂直于显示基板方向上的尺寸。本公开示例性实施例中，“B的正投影位于A的正投影的范围之内”或者“A的正投影包含B的正投影”是指，B的正投影的边界落入A的正投影的边界范围内，或者A的正投影的边界与B的正投影的边界重叠。
在一种示例性实施方式中，显示基板的制备过程可以包括如下操作：
(11)形成第一导电层图案。
在示例性实施方式中，形成第一导电层图案可以包括：在基底10上形成第一导电薄膜，通过图案化工艺对第一导电薄膜进行图案化，形成设置在基底10上的第一导电层图案，第一导电层图案可以包括多个沿第一方向X排布并沿第二方向Y延伸的多个第一电极11，如图10和图11所示，图11为图10中L1-L1位置的剖面结构示意图。
在示例性实施方式中，通过图案化工艺对第一导电薄膜进行图案化可以包括：在第一导电薄膜上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光并显影，在第一电极11位置形成未曝光区域，保留光刻胶，在其余位置形成完全曝光区域，无光刻胶；通过刻蚀工艺将完全曝光区域的第一导电薄膜去除，剥离掉剩余的光刻胶形成第一电极11。
(12)形成电介弹性体层。
在示例性实施方式中，形成电介弹性体层可以包括：在形成前述图案的基底10上沉积电介质弹性体材料形成电介弹性体层，如图12所示，12为电介质弹性体层。在示例性实施方式中，可以通过层与层之间的纳米自组装工艺将电介质弹性体材料沉积在形成有第一导电层图案的基底10上形成电介质弹性体层12。
在示例性实施方式中，纳米自组装工艺是指在无人为干涉条件下，电介质弹性体材料自发地组织在形成有第一导电层图案的基底上形成电介质弹性体层。
(13)形成第二导电层图案。
在示例性实施方式中，形成第二导电层图案可以包括：在形成前述图案的基底10上沉积第二导电薄膜，通过图案化工艺对第二导电薄膜进行图案化，形成设置在电介弹性体层上的第二导电层图案，第二导电层图案可以包括多个沿第二方向Y排布并沿第一方向X延伸的多个第二电极13，如图13和图14所示，图14为图13中L2-L2位置的剖面结构示意图。
在示例性实施方式中，通过图案化工艺对第二导电薄膜进行图案化可以包括：在第二导电薄膜上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光并显影，在第二电极13位置形成未曝光区域，保留光刻胶，在其余位置形成完全曝光区域，无光刻胶；通过刻蚀工艺将完全曝光区域的第二导电薄膜去除，剥离掉剩余的光刻胶形成第二电极13。
在示例性实施方式中，在基底10上可以通过电子束蒸镀方式沉积第一导电薄膜，第一导电薄膜可以为铟锡氧化物半导体透光导电膜，例如，铟锡氧化物可以为氧化铟锡(英文全称Indium Tin Oxides，简写为ITO)。
(14)形成纳米粒子层。
在示例性实施方式中，形成纳米粒子层可以包括：在形成前述图案的基底10上通过点旋涂方式涂覆纳米粒子形成纳米粒子层14。在示例性实施方式中，纳米粒子141可以为金属纳米粒子，例如银(Ag)纳米粒子。如图14和图15所示，图15所示为图14中L3-L3位置的剖面结构示意图。
在示例性实施方式中，形成纳米粒子层还可以包括对纳米粒子层在氮气环境中干燥等步骤。
在示例性实施方式中，上述第一导电薄膜可以为透光导电薄膜，例如可以为铟锡氧化物半导体透光导电膜，铟锡氧化物可以为氧化铟锡(英文全称Indium Tin Oxides，简写为ITO)；在另一种示例性实施方式中，上述第一导电薄膜可以反射导电薄膜，例如可以为金属导电薄膜，金属可以为金、银、铝中的一种。
在示例性实施方式中，上述第一导电薄膜和第二导电薄膜均为透光导电薄膜，得出的第一电极和第二电极均为透光结构，可以制备透射型的显示基板。
在示例性实施方式中，上述第二导电薄膜为透光导电薄膜，第一导电薄膜为反射型导电薄膜，可以制备反射型显示基板。
在示例性实施方式中，在上述步骤(11)之前，还可以包括：在基底10远离第一导电层的一侧形成反射层，反射层可以为金属，例如可以为铝；或者在上述步骤(11)之前，还可以包括：在基底10与第一导电层之间形成反射层和绝缘层，反射层可以为金属，例如可以为铝。在本公开实施例中，在基底10上制备反射层后形成反射型显示基板。
在本公开实施例中，透射型显示基板，显示画面在显示基板远离光线入射的一侧，即显示基板的一侧入射光线后经电介弹性体层对光线进行吸收后，由显示基板的另一侧射出形成显示画面；反射型显示基板，显示画面在显示基板朝向光线入射的一侧，即显示基板的一侧入射光线后经电介弹性体层对光线进行吸收后，由显示基板中的反射层或第一电极的进行反射后在光线入射的一侧射出形成显示画面。
在示例性实施方式中，在上述步骤(14)之前或之后，还可以包括：在在形成第二导电层图案的基底10形成黑矩阵层15，黑矩阵层包括多个黑矩阵结构151，如图5a和图5b所示。
在本公开实施例中，显示基板中第一导电层、形变层、第二导电层、纳米粒子层的总厚度(即图16中第一导电层、形变层、第二导电层、纳米粒子层沿第三方向Z的尺寸之和)不超过200纳米，能够使得显示基板足够轻薄。
本公开实施例还提供了一种显示装置，可以包括上述任一实施例所述的显示基板。
在本公开实施方式中，显示装置可以为手机、电脑、电视机(TV)、医疗监控装置、车载中控装、显示器、笔记本电脑、数码相框、导航仪置等具有显示功能的产品或部件。
本公开实施例还提供了一种显示基板的驱动方法，驱动上述任一实施例所述的显示基板，驱动方法可以包括：给多个第一电极和多个第二电极施加不同电压，使位于第一电极和第二电极之间的形变层产生不同程度的形变。
本公开实施例还提供了一种显示基板的制备方法，可以包括：
在基底的一侧形成第一导电层，第一导电层包括多个平行排布的第一电极；
在第一导电层远离基底的一侧形成形变层；
在形变层远离第一导电层的一侧形成第二导电层，第二导电层包括多个平行排布的第二电极；
在第二导电层远离形变层的一侧形成纳米粒子层，纳米粒子层包括多个纳米粒子；
其中，显示基板包括由第一电极和第二电极交叉限定的多个子像素；多个第一电极和多个第二电极在基底上的正投影存在多个第一重叠区域，任意一个第一重叠区域与至少一个纳米粒子在基底上的正投影存在第二重叠区域；每个子像素在基底上的正投影与相邻的至少两个第二重叠区域至少部分重叠。
在示例性实施方式中，在基底上采用电子束蒸镀工艺形成第一电极。
在示例性实施方式中，在第一导电层远离基底的一侧采用纳米自组装工艺形成形变层。
在示例性实施方式中，在第二导电层远离形变层的一侧采用点旋涂工艺形成纳米粒子层。
本公开实施例提供的显示基板及其驱动方法、制备方法、显示装置，包括叠设在基底上的第一导电层、形变层、第二导电层、纳米粒子层，第一导电层包括多个第一电极，第二导电层包括多个第二电极，多个第一电极和多个第二电极在基底上的正投影存在多个第一重叠区域，任意一个第一重叠区域与至少一个纳米粒子在基底上的正投影存在第二重叠区域；显示基板上的每个子像素在基底上的正投影与相邻的至少两个第二重叠区域至少部分重叠。本公开实施例提供的显示基板制备简单、且比较轻薄，克服现有显示面板存在制备工艺复杂、超薄程度不高的问题。
本公开实施例附图只涉及本公开实施例涉及到的结构，其他结构可参考通常设计。
在不冲突的情况下，本公开实施例即实施例中的特征可以相互组合以得到新的实施例。
虽然本公开实施例所揭露的实施方式如上，但的内容仅为便于理解本公开实施例而采用的实施方式，并非用以限定本公开实施例。任何本公开实施例所属领域内的技术人员，在不脱离本公开实施例所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本公开实施例的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (20)

  1. 一种显示基板，包括基底，以及叠设在所述基底上的第一导电层、形变层、第二导电层和纳米粒子层；
    所述第一导电层包括多个第一电极，所述第二导电层包括多个第二电极，所述纳米粒子层包括多个纳米粒子；所述显示基板包括由所述多个第一电极和所述多个第二电极交叉限定的多个子像素；
    所述多个第一电极和所述多个第二电极在所述基底上的正投影存在多个第一重叠区域，任意一个所述第一重叠区域与至少一个所述纳米粒子在所述基底上的正投影存在第二重叠区域；
    每个子像素在所述基底上的正投影与相邻的至少两个所述第二重叠区域至少部分重叠。
  2. 根据权利要求1所述的显示基板，其中，每个子像素在所述基底上的正投影与相邻的两个所述第二重叠区域至少部分重叠；或者，每个子像素在所述基底上的正投影与相邻的三个所述第二重叠区域至少部分重叠。
  3. 根据权利要求1或2所述的显示基板，其中，所述显示基板包括多个像素单元，每个像素单元包括多个所述子像素，在同一个像素单元中，多个子像素的排布方向与每个子像素中相邻的至少两个第二重叠区域的排布方向不同。
  4. 根据权利要求1或2所述的显示基板，还包括黑矩阵层，所述黑矩阵层设置于所述第二导电层和所述纳米粒子层之间，或者所述黑矩阵层设置于所述纳米粒子层远离所述第二导电层的一侧；
    所述黑矩阵层包括多个黑矩阵结构，所述多个黑矩阵结构设置于相邻两个子像素之间。
  5. 根据权利要求1至4任一项所述的显示基板，其中，在显示基板所在平面内，所述第一电极为条状结构，沿与第一方向呈第一夹角的方向延伸，所述第二电极为条状结构，沿与第一方向呈第二夹角的方向延伸，所述第一夹角和所述第二夹角取值范围为0°至180°。
  6. 根据权利要求1至4任一项所述的显示基板，其中，所述第一电极和 所述第二电极均为弧形，所述第一电极的弧形的弯曲方向与所述第二电极的弧形的弯曲方向相反，所述多个子像素沿所述弧形排布。
  7. 根据权利要求1至6任一项所述的显示基板，其中，所述第一电极和所述第二电极均为透光结构。
  8. 根据权利要求1至6任一项所述的显示基板，其中，所述第一电极为反光结构，所述第二电极为透光结构。
  9. 根据权利要求1至8任一项所述的显示基板，还包括反射层，所述反射层设置于所述基底远离所述第一导电层的一侧。
  10. 根据权利要求1至8任一项所述的显示基板，还包括反射层和绝缘层，所述反射层设置于所述基底与所述绝缘层之间，所述绝缘层设置于所述反射层和所述第一导电层之间。
  11. 根据权利要求1至8任一项所述的显示基板，其中，所述纳米粒子为银纳米粒子。
  12. 根据权利要求1至8任一项所述的显示基板，其中，所述形变层的材质为聚丙烯酸酯或者硅树脂橡胶。
  13. 根据权利要求1至8任一项所述的显示基板，其中，所述纳米粒子呈周期排布，相邻两个纳米粒子中心位置之间的距离为200纳米至400纳米。
  14. 根据权利要求1至8任一项所述的显示基板，其中，所述纳米粒子朝向所述第二导电层的一侧与所述第一导电层朝向所述形变层的一侧之间的距离为2纳米至20纳米。
  15. 一种显示装置，包括如权利要求1至14任一项所述的显示基板。
  16. 一种显示基板的驱动方法，驱动如权利要求1至14任一项所述的显示基板，包括：给多个第一电极和多个第二电极施加不同电压，使位于所述第一电极和所述第二电极之间的形变层产生不同程度的形变。
  17. 一种显示基板的制备方法，包括：
    在基底的一侧形成第一导电层，所述第一导电层包括多个平行排布的第一电极；
    在所述第一导电层远离所述基底的一侧形成形变层；
    在所述形变层远离所述第一导电层的一侧形成第二导电层，所述第二导电层包括多个平行排布的第二电极；
    在所述第二导电层远离所述形变层的一侧形成纳米粒子层，所述纳米粒子层包括多个纳米粒子；
    其中，所述显示基板包括由所述第一电极和所述第二电极交叉限定的多个子像素；所述多个第一电极和所述多个第二电极在所述基底上的正投影存在多个第一重叠区域，任意一个所述第一重叠区域与至少一个所述纳米粒子在所述基底上的正投影存在第二重叠区域；每个子像素在所述基底上的正投影与相邻的至少两个所述第二重叠区域至少部分重叠。
  18. 根据权利要求17所述的显示基板的制备方法，其中，在所述基底上采用电子束蒸镀工艺形成所述第一电极。
  19. 根据权利要求17所述的显示基板的制备方法，其中，在所述第一导电层远离所述基底的一侧采用纳米自组装工艺形成所述形变层。
  20. 根据权利要求17所述的显示基板的制备方法，其中，在所述第二导电层远离所述形变层的一侧采用点旋涂工艺形成所述纳米粒子层。
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