WO2023171108A1 - 膜構造体及び電子デバイス - Google Patents

膜構造体及び電子デバイス Download PDF

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Publication number
WO2023171108A1
WO2023171108A1 PCT/JP2023/000246 JP2023000246W WO2023171108A1 WO 2023171108 A1 WO2023171108 A1 WO 2023171108A1 JP 2023000246 W JP2023000246 W JP 2023000246W WO 2023171108 A1 WO2023171108 A1 WO 2023171108A1
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Prior art keywords
film
substrate
layer
electronic device
piezoelectric film
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English (en)
French (fr)
Japanese (ja)
Inventor
晃雄 小▲西▼
広晃 金森
猛 飯塚
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Microinnovators Laboratory
Microinnovators Laboratory Inc
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Microinnovators Laboratory
Microinnovators Laboratory Inc
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Priority to JP2024505916A priority Critical patent/JPWO2023171108A1/ja
Priority to CN202380026069.9A priority patent/CN118830346A/zh
Priority to EP23766289.5A priority patent/EP4478868A4/en
Priority to US18/840,154 priority patent/US20260026264A1/en
Publication of WO2023171108A1 publication Critical patent/WO2023171108A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control

Definitions

  • the present invention relates to a membrane structure and an electronic device.
  • a film structure having a substrate and a piezoelectric film formed on the substrate, and an electronic device equipped with the film structure are known.
  • Patent Document 1 JP-A No. 2003-198319 discloses a substrate made of a semiconductor or an insulator having a vibration space, and a lower electrode, a piezoelectric thin film, and an upper electrode arranged in this order at a position facing the vibration space of the substrate.
  • the piezoelectric thin film is an aluminum nitride thin film exhibiting c-axis orientation in a thin film piezoelectric resonator including a stacked layered structure.
  • the aluminum nitride film which is a piezoelectric film
  • the polarization direction of the piezoelectric film is oriented perpendicular to the substrate.
  • the piezoelectric film in the in-plane direction along the top surface of the substrate may be preferable to align the piezoelectric film in the in-plane direction along the top surface of the substrate, that is, to grow the piezoelectric film epitaxially, but it is also preferable to align the orientation direction of the piezoelectric film in the in-plane direction along the top surface of the substrate. It is difficult. Additionally, depending on the device, in addition to aligning the polarization direction of the piezoelectric film perpendicular to the substrate, advantageous devices can be created by aligning the orientation direction of the piezoelectric film in the in-plane direction along the top surface of the substrate. There are things you can do.
  • the present invention has been made in order to solve the problems of the prior art as described above, and in a film structure having a piezoelectric film formed on a substrate, the polarization direction of the piezoelectric film is directed toward the substrate. It is an object of the present invention to provide a film structure in which the piezoelectric films are aligned in the vertical direction and in which the orientation direction of the piezoelectric films is also aligned in the in-plane direction along the upper surface of the substrate.
  • a film structure as an embodiment of the present invention includes a substrate, a buffer film containing ZrO 2 formed on the substrate, and a piezoelectric film formed on the buffer film, and the substrate is a Si substrate. , or an SOI substrate including a base made of a Si substrate, an insulating layer on the base, and an SOI layer made of a Si film on the insulating layer, in which the polarization direction of the piezoelectric film is preferentially oriented perpendicular to the substrate. ing.
  • the film structure may include a metal film formed on the buffer film.
  • the metal film may be a Pt film, a Mo film, a W film, a Ru film, or a Cu film.
  • the film structure may include an SRO film formed on a metal film.
  • the piezoelectric film may be made of nitride.
  • the nitride may be AlN.
  • the nitride may be doped with Sc.
  • the Si substrate may be a Si (100) substrate, or the SOI layer may be made of a Si (100) film.
  • the Si substrate may be a Si (111) substrate, or the SOI layer may be made of a Si (111) film.
  • An electronic device as one embodiment of the present invention is an electronic device including the film structure.
  • An electronic device as an embodiment of the present invention is an electronic device including the membrane structure, and the membrane structure has a comb-teeth electrode formed on the top or bottom surface of the piezoelectric film.
  • the film structure may include a matching layer formed on the substrate.
  • a hollow portion may be provided at the bottom of the piezoelectric film.
  • the film structure may have an upper electrode formed on the top of the piezoelectric film and a lower electrode formed on the bottom of the piezoelectric film.
  • the area of the overlapping portion of the upper electrode and the lower electrode may be smaller than the area of the hollow portion.
  • the area of the overlapping portion of the upper electrode and the lower electrode may be 1/2 or less of the area of the hollow portion.
  • the film structure may include a matching layer formed on the substrate.
  • the matching layer may be made of a material whose hardness increases as the temperature rises.
  • the material may be a Si compound.
  • the piezoelectric film may be made of nitride.
  • the polarization direction of the piezoelectric film can be aligned in a direction perpendicular to the substrate, and the orientation of the piezoelectric film can be aligned. It is possible to realize a film structure whose directions are aligned even in the in-plane direction along the upper surface of the substrate.
  • FIG. 2 is a cross-sectional view of the membrane structure of Embodiment 1.
  • FIG. 2 is a cross-sectional view of the membrane structure of Embodiment 1.
  • FIG. 2 is a cross-sectional view of the membrane structure of Embodiment 1.
  • FIG. 2 is a cross-sectional view of the membrane structure of Embodiment 1.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a cross-sectional view of an electronic device according to a second embodiment.
  • FIG. 3 is a perspective view of an electronic device according to a third embodiment.
  • FIG. 3 is a perspective view of an electronic device according to a third embodiment.
  • FIG. 3 is a perspective view of an electronic device according to a third embodiment.
  • FIG. 2 is a diagram showing a crystal structure of c-axis oriented AlN.
  • 3 is a graph showing an example of the ⁇ -2 ⁇ spectrum obtained by the XRD method of the membrane structure of Example 1.
  • 3 is a graph showing an example of the ⁇ -2 ⁇ spectrum obtained by the XRD method of the membrane structure of Example 2.
  • 3 is a graph showing the results of reciprocal lattice map measurement of the membrane structure of Example 1.
  • 3 is a graph showing the results of reciprocal lattice map measurement of the membrane structure of Example 2.
  • 3 is a graph showing an example of a ⁇ scan spectrum of the membrane structure of Example 1 obtained by the XRD method.
  • 3 is a graph showing an example of the ⁇ scan spectrum of the membrane structure of Example 2 obtained by the XRD method.
  • FIG. 3 is a diagram for explaining lattice matching between the AlN (001) plane and the Pt (100) plane in the film structure of Example 1.
  • FIG. 3 is a diagram for explaining lattice matching between the AlN (001) plane and the Pt (100) plane in the film structure of Example 1.
  • FIG. 7 is a diagram for explaining lattice matching between the AlN (001) plane and the Pt (111) plane in the film structure of Example 2.
  • FIG. 7 is a diagram for explaining lattice matching between the AlN (001) plane and the Pt (111) plane in the film structure of Example 2.
  • hatching shading added to distinguish structures may be omitted depending on the drawing.
  • Embodiment 1 First, a membrane structure according to Embodiment 1, which is one embodiment of the present invention, will be described. 1 to 4 are cross-sectional views of the membrane structure of the first embodiment.
  • the membrane structure 10 of the first embodiment is a membrane structure having a piezoelectric film 11 and a substrate 12, in which the polarization direction of the piezoelectric film 11, that is, the piezoelectric film portion is directed toward the substrate 12. It is characterized by preferential orientation perpendicular to .
  • the polarization direction is indicated by polarization direction DP1 (the same applies to FIGS. 2 and 5 to 15). Since the polarization direction of the piezoelectric film 11 is preferentially oriented perpendicular to the substrate 12, it is possible to realize a film structure in which the polarization direction of the piezoelectric film is aligned perpendicular to the substrate.
  • the membrane structure 10 of the first embodiment is a membrane structure having a piezoelectric membrane 11, an electrode 13, and a substrate 12, and the piezoelectric membrane 11, that is, the piezoelectric membrane portion. It is characterized in that the polarization direction is preferentially oriented perpendicular to the substrate 12. As described above, since the polarization direction of the piezoelectric film 11 is preferentially oriented perpendicular to the substrate 12, it is possible to realize a film structure in which the polarization direction of the piezoelectric film is aligned perpendicular to the substrate. .
  • the polarization direction of the piezoelectric film 11 is preferentially oriented perpendicular to the substrate 12
  • the polarization direction of the piezoelectric film 11 is oriented perpendicular to the substrate 12. This means that the portion exceeds 50% of the entire piezoelectric film 11 in volume fraction, for example, when measuring a ⁇ -2 ⁇ spectrum by In the obtained ⁇ -2 ⁇ spectrum, the peak intensity of the maximum peak indicating the portion where the polarization direction is oriented perpendicular to the substrate 12 is different from the peak intensity indicating the portion where the polarization direction is not oriented perpendicular to the substrate 12. This means that the peak intensity is higher than the maximum peak intensity shown.
  • the case where the polarization direction is perpendicular to the substrate 12 means not only the case where the polarization direction is completely perpendicular to the top surface of the substrate 12 but also the case where the angle between the direction perpendicular to the top surface of the substrate 12 and the polarization direction is 20°. This includes cases where:
  • the material of the piezoelectric film 11 is nitride. That is, the piezoelectric film 11 is made of nitride.
  • the material of the piezoelectric film 11 is a nitride, aluminum nitride (AlN) or gallium nitride (GaN), which is a lead-free piezoelectric material with excellent piezoelectric properties, can be used.
  • the material of the piezoelectric film 11 is preferably a c-axis oriented AlN-based piezoelectric material, that is, a piezoelectric material containing AlN as a main component. That is, the nitride is AlN.
  • the material of the piezoelectric film 11 is mainly composed of AlN, it is possible to use a piezoelectric material that is lead-free, has a high Clark number, contains an element that is abundant on the earth, and has excellent piezoelectric properties. can.
  • c-axis orientation of AlN AlN can be oriented such that the c-axis direction, which is the polarization direction of AlN, is perpendicular to the substrate 12. Note that AlN has a hexagonal wurtzite structure and is polarized in the c-axis direction. GaN also has a wurtzite structure.
  • a piezoelectric material containing AlN as a main component means that the content of AlN in the piezoelectric material exceeds 50% by weight, or the content of AlN in the piezoelectric material exceeds 50 mol%. means.
  • the nitride is doped with scandium (Sc).
  • Sc scandium
  • the nitride material piezoelectric characteristics can be improved by adding Sc to the nitride.
  • magnesium, niobium, hafnium, yttria, boron, titanium, etc. may be used as the doping material.
  • the polarizability of the piezoelectric film 11 is 80% or more. This makes it possible to realize a film structure in which the polarization direction of the piezoelectric film is aligned perpendicular to the substrate.
  • the substrate 12 has a structure in which a Si layer and two ZrO layers are stacked in this order.
  • Si represents silicon and ZrO2 represents zirconium oxide.
  • ZrO 2 serves as a buffer film and contributes to forming the piezoelectric material formed thereon with good crystallinity. That is, since the buffer film contains ZrO 2 formed on the Si layer, the polarization direction of the piezoelectric film is aligned perpendicular to the substrate, and the orientation direction of the piezoelectric film is aligned with the plane along the upper surface of the substrate. It can also be aligned inward.
  • the substrate 12 includes a (100) oriented Si layer 12a and a ZrO 2 layer 12b formed on the Si layer 12a.
  • the ZrO 2 layer 12b preferably includes (200) oriented ZrO 2 and (002) oriented ZrO 2 .
  • a (100) oriented Si substrate that is, a Si (100) substrate can be used.
  • the polarization direction of the piezoelectric film 11 is oriented perpendicular to the substrate 12, such as a piezoelectric material whose main component is a c-axis oriented AlN-based piezoelectric material, and the piezoelectric film 11 is epitaxially grown. , can be easily formed on the substrate 12.
  • the polarization direction of the piezoelectric film 11 can be aligned perpendicular to the substrate, and the orientation direction of the piezoelectric film can be aligned with the substrate.
  • Electronic devices that are aligned even in the in-plane direction along the top surface of the semiconductor substrate can be formed on an inexpensive semiconductor substrate.
  • the electrode 13 has a structure in which a Pt (200) layer and a SrRuO 3 (100) layer are stacked in this order.
  • Pt represents platinum
  • SrRuO 3 (SRO) represents strontium ruthenate.
  • the electrode 13 preferably includes a (200) oriented Pt layer 13a formed on the substrate 12 and a (100) oriented SRO layer 13b formed on the Pt layer 13a.
  • the polarization direction of the piezoelectric film 11 is oriented perpendicular to the substrate 12, such as a piezoelectric material whose main component is a c-axis oriented AlN-based piezoelectric material, and the piezoelectric film 11 is epitaxially grown. , can be easily formed on the substrate 12 via the electrode 13 as the lower electrode.
  • the present invention is not limited to the case where the Si layer 12a is (100) oriented, and is not limited to the case where the ZrO 2 layer 12b is (200) oriented or (002) oriented, and the case where the Pt layer 13a is (200) oriented.
  • the present invention is not limited to the case where the electrode 13 is formed on the Pt layer 13a and includes the (100) oriented SRO layer 13b.
  • the substrate 12 can include a (111) oriented Si layer 12a and a ZrO 2 layer 12b formed on the Si layer 12a.
  • the ZrO 2 layer 12b preferably includes, for example, (111)-oriented ZrO 2 .
  • a (111) oriented Si substrate that is, a Si (111) substrate can be used.
  • the piezoelectric film 11 is also epitaxially grown, and the polarization direction of the piezoelectric film 11 is oriented perpendicular to the substrate 12, such as a piezoelectric material whose main component is an AlN-based piezoelectric material with c-axis orientation. can be easily formed on the substrate 12.
  • the electrode 13 is formed on the substrate 12 and includes a (111) oriented Pt layer 13a.
  • the Si layer 12a of the substrate 12 can be regarded as a substrate.
  • the film structure 10 of the first embodiment includes a substrate (Si layer 12a) which is a Si substrate, and a buffer film (ZrO 2 layer) containing ZrO 2 formed on the substrate (Si layer 12a). 12b) and a piezoelectric film 11 formed on a buffer film (ZrO 2 layer 12b) via a metal film (Pt layer 13a), and the polarization direction of the piezoelectric film 11 is aligned with the upper surface of the substrate 12. It is a membrane structure with a preferential vertical orientation.
  • the piezoelectric film 11 is a piezoelectric film formed on Pt/ZrO 2 /Si.
  • the film structure 10 further includes a metal film (Pt layer 13a) on the buffer film (ZrO 2 layer 12b), and the metal film (Pt
  • the piezoelectric film 11 includes a ZrO 2 film (ZrO 2 layer 12b) on the Si substrate (Si layer 12a) in order from the bottom. , a piezoelectric film formed through a Pt film (Pt layer 13a) and an SRO film (SRO layer 13b).
  • an SOI (Silicon On Insulator) substrate which is a semiconductor substrate, can also be used as the Si layer 12a of the substrate 12 instead of the Si substrate.
  • the substrate 12 includes a base 12c made of Si, a BOX (Buried Oxide) layer 12d as an insulating layer which is a buried oxide film formed on the base 12c, and a BOX (Buried Oxide) layer 12d formed on the BOX layer 12d. It includes a Si layer 12a which is an SOI (Silicon On Insulator) layer formed of a Si film.
  • a film structure having excellent dielectric constant characteristics and withstand voltage characteristics of a piezoelectric film can be formed on an SOI substrate, and a plurality of piezoelectric elements formed with high shape accuracy can be formed on the SOI substrate.
  • Electronic devices made of micro electro mechanical systems (MEMS) can be easily formed.
  • an SOI substrate instead of a Si substrate an SOI layer made of a Si (100) film can be used as the (100) oriented Si layer 12a of the substrate 12, or 111)
  • As the oriented Si layer 12a an SOI layer made of a Si(111) film can be used.
  • the Si layer 12a of the substrate 12 can be regarded as a substrate.
  • the film structure 10 of the first embodiment includes a substrate (Si layer 12a) which is an SOI substrate, and a buffer film (ZrO 2 layer) containing ZrO 2 formed on the substrate (Si layer 12a). 12b) and a piezoelectric film 11 formed on a buffer film (ZrO 2 layer 12b) via a metal film (Pt layer 13a), and the polarization direction of the piezoelectric film 11 is aligned with the upper surface of the substrate 12. It is a membrane structure with a preferential vertical orientation.
  • the piezoelectric film 11 is a piezoelectric film formed on Pt/ZrO 2 /Si on SOI.
  • the film structure 10 further includes a metal film (Pt layer 13a) on the buffer film (ZrO 2 layer 12b), and the metal film (Pt
  • the piezoelectric film 11 includes a ZrO 2 film (ZrO 2 layer 12b) on the substrate (Si layer 12a) which is an SOI substrate in order from the bottom.
  • the electrode 13 can also include a Mo layer 13c or a W layer 13d instead of the Pt layer 13a.
  • the electrode 13 will include the SRO layer 13b formed on the Mo layer 13c or the W layer 13d.
  • the film structure 10 of the first embodiment includes a ZrO 2 film (ZrO 2 layer 12b) and a Mo film on a substrate (Si layer 12a), which is a Si substrate or an SOI substrate, in order from the bottom.
  • the piezoelectric film 11 is formed via a (Mo layer 13c) or a W film (W layer 13d).
  • the polarization direction of the piezoelectric film 11 is similar to the case where the electrode 13 includes the Pt layer 13a, such as a piezoelectric material whose main component is a c-axis oriented AlN-based piezoelectric material.
  • the piezoelectric film 11 oriented perpendicular to the piezoelectric film 12 and grown epitaxially can be easily formed on the substrate 12 via the electrode 13 serving as the lower electrode.
  • a Ru layer or a Cu layer may be used as the material for the electrodes 13a, 13c, or 13d. These materials are common as electrode materials.
  • the thickness of the piezoelectric film 11 is preferably 100 nm or more. When the film thickness of the piezoelectric film 11 is 100 nm or more, the film thickness of the piezoelectric film 11 can be made sufficiently larger than when the film thickness of the piezoelectric film 11 is less than 100 nm. It is possible to form an electronic device on a substrate in which the directions are aligned perpendicular to the substrate, and the orientation direction of the piezoelectric film is also aligned in the in-plane direction along the upper surface of the substrate.
  • the electronic device according to the second embodiment is a bulk acoustic wave (BAW) filter or a piezoelectric thin film resonator (Film Bulk Acoustic Resonator: FBAR) including the film structure according to the first embodiment.
  • BAW bulk acoustic wave
  • FBAR piezoelectric thin film resonator
  • an electronic device 20 is an electronic device including a membrane structure 10 having a piezoelectric film 11, two electrodes, and a substrate 12, in which polarization of the piezoelectric film 11 It is characterized in that the direction is preferentially oriented perpendicular to the substrate 12.
  • the film structure 10 included in the electronic device 20 of the second embodiment can also include the piezoelectric film 11, the electrode 13, and the substrate 12, similarly to the film structure 10 of the first embodiment. That is, the electronic device 20 of the second embodiment includes the electrode 13 and the piezoelectric film 11 on the substrate 12. Therefore, among the piezoelectric film 11, electrode 13, and substrate 12 that the film structure 10 has, the same parts as the piezoelectric film 11, electrode 13, and substrate 12 that the film structure 10 of Embodiment 1 have, Explanation may be omitted.
  • the substrate 12 has a hollow portion below the piezoelectric film 11. 21 are provided. In such a case, at least the central portion of the piezoelectric film 11 located on the hollow portion 21 is not restrained by the substrate 12 and can vibrate freely, so that bulk acoustic waves are generated in the central portion. can be easily generated. Note that since a hollow portion is provided in the lower part of the piezoelectric film 11, when the substrate 12 is etched from the back side, the Si layer 12a (see FIGS. 3 and 4) included in the substrate 12 is etched and removed. The ZrO 2 layer 12b (see FIGS.
  • FIGS. 5 to 12 illustration of the case where the ZrO 2 layer 12b (see FIGS. 3 and 4) remains without being etched is omitted.
  • an upper electrode 22 is provided as an upper electrode or an upper electrode formed on the piezoelectric film 11.
  • the electrode 13 is a lower electrode formed under the piezoelectric film 11 or an electrode serving as a lower electrode. That is, the electrode 22 and the electrode 13 are an upper electrode formed on the upper part of the piezoelectric film 11 and a lower electrode formed on the lower part of the piezoelectric film 11. In the example shown in FIG. 5, electrodes are formed above and below in contact with the piezoelectric film 11.
  • the membrane structure 10 is a membrane structure having a piezoelectric membrane 11, two electrodes, an electrode 13 and an electrode 22, and a substrate 12, in which the polarization direction of the piezoelectric membrane 11, that is, the piezoelectric membrane portion is It is characterized by preferential orientation perpendicular to the substrate 12.
  • a voltage such as an AC voltage between the electrode 13 and the electrode 22
  • an electric field such as an AC electric field in the thickness direction of the piezoelectric film 11 can be easily applied to the piezoelectric film 11.
  • bulk elastic waves can be easily generated in the piezoelectric film 11.
  • it since it is possible to generate or pass a bulk elastic wave having a resonant frequency determined depending on the elastic characteristics of the piezoelectric film 11, etc., it can function as a resonator or a filter.
  • the substrate 12 includes a (100)-oriented or (111)-oriented Si layer 12a (see FIG. 3) and a ZrO layer formed on the Si layer 12a.
  • a substrate including two layers 12b (see FIG. 3) can be used.
  • the ZrO 2 layer 12b preferably includes (200)-oriented ZrO 2 and (002)-oriented ZrO 2 , or (111)-oriented ZrO 2 .
  • the Si layer 12a of the substrate 12 can be regarded as a substrate
  • the electronic device 20 of the second embodiment has the electrode 13 and the piezoelectric film 11 on the substrate (Si layer 12a) which is a Si substrate. This is an electronic device in which the polarization direction of the piezoelectric film 11 is preferentially oriented perpendicular to the substrate 12, and a hollow portion 21 is provided in the lower part of the piezoelectric film 11.
  • the area A of the overlapping portion of the upper and lower electrodes is smaller than the area B of the piezoelectric film 11 and the lower electrode exposed in the hollow portion. That is, the area of the overlapping portion between the electrode 22, which is the upper electrode, and the electrode 13, which is the lower electrode, is smaller than the area of the hollow portion 21.
  • the portion of the piezoelectric film 11 to which the electric field is applied in the thickness direction can be reliably separated from the substrate 12. Therefore, the portion of the piezoelectric film 11 to which the electric field is applied in the thickness direction is not restrained by the substrate 12 and can vibrate freely, making it possible to more easily generate bulk elastic waves.
  • the area ratio of the area A of the overlapping portion of the upper and lower electrodes to the area B of the piezoelectric film 11 and the lower electrode exposed in the hollow portion is less than 1/2 or 1/2. 2 or less. That is, the area of the overlapping portion between the electrode 22, which is the upper electrode, and the electrode 13, which is the lower electrode, is 1/2 or less of the area of the hollow portion 21.
  • the portion of the piezoelectric film 11 to which the electric field is applied in the thickness direction can be further reliably separated from the substrate 12. Therefore, the portion of the piezoelectric film 11 to which the electric field is applied in the thickness direction is not further restricted by the substrate 12 and can vibrate more freely, making it possible to more easily generate bulk acoustic waves.
  • the film structure 10 provided in the electronic device 20 of the second embodiment also includes the piezoelectric film 11, the electrode 13, and the substrate 12, similarly to the film structure 10 of the first embodiment. can have. Therefore, similarly to the film structure 10 of the first embodiment, the film structure 10 provided in the electronic device 20 of the second embodiment uses a Si substrate as the Si layer 12a of the substrate 12 (see FIG. 4). Instead, an SOI substrate which is a semiconductor substrate can be used, and the electrode 13 has a Mo layer 13c (see FIG. 3) or a W layer 13d (see FIG. 3) instead of the Pt layer 13a (see FIG. 3). It can also be included.
  • a Ru layer or a Cu layer may be used as the material for the electrodes 13a, 13c, or 13d. These materials are common as electrode materials.
  • the material of the piezoelectric film 11 is preferably nitride, similarly to the film structure 10 of the first embodiment.
  • the material of the piezoelectric film 11 is preferably an AlN-based piezoelectric material with c-axis orientation, that is, the nitride is preferably AlN, and the nitride is preferably doped with Sc, and the polarization of the piezoelectric film 11 is The ratio is preferably 80% or more, and the thickness of the piezoelectric film is preferably 100 nm or more.
  • the electronic device 20 shown in FIG. 6 has a dielectric layer 23 as a matching layer on the substrate 12 and under the lower electrode, that is, under the electrode 13, in addition to the parts included in the electronic device 20 shown in FIG.
  • the parts of the electronic device 20 other than the dielectric layer 23 are made of a material that becomes soft as the temperature rises, and the dielectric layer 23 is made of a material that becomes hard as the temperature rises, the dielectric of the electronic device 20
  • the temperature dependence of the modulus or piezoelectric properties, ie the temperature properties can be stabilized or adjusted.
  • dielectric layer 23 is a Si compound, for example silicon dioxide (SiO 2 ).
  • SiO 2 silicon dioxide
  • the dielectric layer 23 since the dielectric layer 23 is made of a material that is highly compatible with the manufacturing process of semiconductor devices, the dielectric layer 23 can be easily formed.
  • the electronic device 20 shown in FIG. 7 has a dielectric layer 24 as an upper dielectric layer on the piezoelectric film 11 in addition to the parts that the electronic device 20 shown in FIG. 5 has.
  • the parts of the electronic device 20 other than the dielectric layer 24 are made of a material that becomes soft as the temperature rises, and the dielectric layer 24 is made of a material that becomes hard as the temperature rises, the dielectric of the electronic device 20
  • the temperature dependence of the modulus or piezoelectric properties, ie the temperature properties can be stabilized or adjusted.
  • dielectric layer 24 is a Si compound, for example SiO2 .
  • the dielectric layer 24 is made of a material that is highly compatible with the manufacturing process of semiconductor devices, the dielectric layer 24 can be easily formed.
  • one of the piezoelectric films 11 is fixed, and the other side is made of a material whose hardness changes depending on the temperature. It can be made so that it is fixed weakly. That is, either the top or bottom of the piezoelectric film 11 can be fixed, and the opposite side of the piezoelectric film 11 can be weakly fixed with a material whose hardness changes depending on the temperature (described later).
  • Embodiment 3 described using FIGS. 13 to 15 This makes it possible to realize an electronic device that takes advantage of displacement in the sliding direction and that can compensate for temperature characteristics.
  • the electronic device 20 shown in FIG. 8 includes, in addition to the parts included in the electronic device 20 shown in FIG. and a dielectric layer 24 as an upper dielectric layer thereon. Also, in the example shown in FIG. 8, dielectric layer 24 is provided on top electrode 22. In the example shown in FIG. That is, in the example shown in FIG. 8 as well, electrodes are formed above and below in contact with the piezoelectric film 11.
  • the parts of the electronic device 20 other than the dielectric layer 23 and the dielectric layer 24 are made of a material that becomes soft as the temperature rises, and the dielectric layer 23 and the dielectric layer 24 are made of a material that becomes hard as the temperature rises. If the electronic device 20 is made of a material whose hardness increases as the temperature increases, the temperature dependence of the dielectric constant characteristics or piezoelectric characteristics of the electronic device 20, that is, the temperature characteristics can be stabilized or adjusted.
  • dielectric layer 23 and dielectric layer 24 are Si compounds, for example SiO 2 .
  • a dielectric layer 23 as a lower dielectric layer is provided between the substrate 12 and the piezoelectric film 11, and a dielectric layer 24 as an upper dielectric layer is provided on the piezoelectric film 11.
  • an electrode 22 as an upper electrode is provided on a dielectric layer 24 as an upper electrode. That is, the electronic device 20 shown in FIG. 9 is obtained by reversing the stacking order of the electrode 22 and the dielectric layer 24 in the vertical direction in the electronic device 20 shown in FIG. Further, the structure shown in FIG. 9 is not a structure in which electrodes are formed above and below in contact with the piezoelectric film 11. Even in such a case, the same effects as the electronic device 20 shown in FIG. 8 can be achieved. Further, as described above, the dielectric layer 23 and the dielectric layer 24 are made of a Si compound, for example, SiO 2 .
  • the electronic device 20 has two electrodes 22 as upper electrodes.
  • the two electrodes 22 are shown as electrode 22a and electrode 22b. This makes it possible to more easily realize an electronic device that takes advantage of displacement in the sliding direction.
  • FIG. 10 schematically shows a case where the piezoelectric film 11 has two types of displacement in the sliding direction.
  • the polarization direction (polarization direction DP1) of the piezoelectric film 11 is perpendicular to the substrate 12 and preferentially oriented in a plurality of directions, and there are electrodes 22 and 13 on the top and bottom of the piezoelectric film. It is preferable. In such a case as well, it is possible to more easily realize an electronic device that takes advantage of displacement in the sliding direction.
  • a plurality of electrodes be provided above or below the piezoelectric film 11.
  • no lower electrode is provided, and two electrodes 22, ie, electrode 22a and electrode 22b, are provided as upper electrodes.
  • two electrodes 22, ie, electrode 22a and electrode 22b are provided as upper electrodes.
  • Embodiment 3 is a surface acoustic wave (SAW) filter including the membrane structure according to the first embodiment.
  • SAW surface acoustic wave
  • an electronic device 30 is an electronic device equipped with a membrane structure 10 having a piezoelectric film 11, a comb-shaped electrode, and a substrate 12, in which polarization of the piezoelectric film 11 It is characterized in that the direction is preferentially oriented perpendicular to the substrate 12.
  • the film structure 10 provided in the electronic device 30 of the third embodiment can include the piezoelectric film 11 and the substrate 12. Therefore, the description of the same portions of the piezoelectric film 11 and substrate 12 of the film structure 10 as the piezoelectric film 11 and the substrate 12 of the film structure 10 of Embodiment 1 may be omitted. be.
  • the electronic device 30 of the third embodiment is a SAW filter including the membrane structure 10 of the first embodiment, a comb-shaped electrode (comb-shaped electrode) is provided on the top or bottom surface of the piezoelectric film 11, that is, the piezoelectric portion.
  • An electrode 31 and an electrode 32 are formed as electrodes. That is, the electronic device 30 of the third embodiment includes the electrodes 31 and 32 and the piezoelectric film 11 on the substrate 12. In such a case, surface acoustic waves can be easily generated in the piezoelectric film 11 by applying an alternating current voltage between the electrodes 31 and 32.
  • the substrate 12 includes a (100)-oriented or (111)-oriented Si layer 12a (see FIG. 3) and a ZrO layer formed on the Si layer 12a.
  • a substrate including two layers 12b can be used.
  • the ZrO 2 layer 12b preferably includes (200)-oriented ZrO 2 and (002)-oriented ZrO 2 , or (111)-oriented ZrO 2 .
  • the Si layer 12a of the substrate 12 can be considered as a substrate, and the electronic device 30 of the third embodiment has the piezoelectric film 11 on the substrate (Si layer 12a) which is a Si substrate, This is an electronic device in which the polarization direction of the piezoelectric film 11 is preferentially oriented perpendicular to the substrate 12.
  • an electrode 31 and an electrode 32 as comb-shaped electrodes are formed on the upper surface of the piezoelectric film 11. That is, in the example shown in FIG. 13, the electrodes 31 and 32 are comb-teeth electrodes formed on the upper surface of the piezoelectric film 11.
  • electrodes 31 and 32 as comb-shaped electrodes may be formed on the lower surface of the piezoelectric film 11. That is, the electrodes 31 and 32 can also be comb-teeth electrodes formed on the lower surface of the piezoelectric film 11.
  • the polarization direction of the piezoelectric film 11 is preferentially oriented perpendicular to the substrate 12, the polarization direction of the piezoelectric film 11 and the direction of the comb-shaped electrodes are preferably orthogonal to each other.
  • the electrode 31 as a comb-shaped electrode that is, a comb-teeth electrode, has a main body 31a extending in the direction DR1 in plan view, and protrudes from the main body 31a in a direction DR2 that intersects, preferably orthogonally, to the direction DR1 in plan view, It includes a plurality of comb teeth 31b each extending in the direction DR2 in a plan view and arranged in the direction DR1.
  • an electrode 32 as a comb-shaped electrode that is, a comb-teeth electrode, is provided with a main body 32a extending in a direction DR1 in a plan view, and protruding from the main body 32a in a direction DR2 that intersects, preferably perpendicular to, the direction DR1 in a plan view. It includes a plurality of comb teeth 32b each extending in the direction DR2 and arranged in the direction DR1 when viewed. Further, it is assumed that the comb teeth 31b and the comb teeth 32b are arranged alternately along the direction DR1.
  • the direction of the comb-shaped electrode is the direction DR2, which is the direction in which the comb teeth 31b and the comb teeth 32b extend
  • the polarization direction DP1 of the piezoelectric film 11 is the direction in which the comb teeth 31b and the comb teeth 32b extend. It is a direction that intersects and preferably perpendicularly intersects with the extending direction DR2.
  • the film structure 10 provided in the electronic device 30 of the third embodiment also includes the piezoelectric film 11 and the substrate 12, similar to the film structure 10 of the first embodiment. I can do it. Therefore, in the film structure 10 provided in the electronic device 30 of the third embodiment, the substrate 12 has a Si layer and two ZrO layers laminated in this order, similarly to the film structure 10 of the first embodiment.
  • the Si layer 12a (see FIG. 4) of the substrate 12 an SOI substrate, which is a semiconductor substrate, can be used instead of the Si substrate, and the electrode 13 can have a Pt layer 13a (see FIG. 3).
  • the electrode 13 may include a Mo layer 13c (see FIG. 3) or a W layer 13d (see FIG. 3).
  • a Ru layer or a Cu layer may be used as the material for the electrodes 13a, 13c, or 13d.
  • the material of the piezoelectric film 11 is preferably nitride, similarly to the film structure 10 of the first embodiment.
  • the material of the piezoelectric film 11 is preferably an AlN-based piezoelectric material with c-axis orientation, that is, the nitride is preferably AlN, and the nitride is preferably doped with Sc, and the polarization of the piezoelectric film 11 is The ratio is preferably 80% or more, and the thickness of the piezoelectric film 11 is preferably 100 nm or more.
  • the electronic device 30 shown in FIG. 14 has a dielectric layer 33 as a matching layer formed on the substrate 12 and under the piezoelectric film 11 in addition to the parts that the electronic device 30 shown in FIG. 13 has. Thereby, acoustic matching can be achieved between the substrate 12 and the piezoelectric film 11.
  • the electronic device 30 can be stabilized or adjusted.
  • the dielectric layer 33 is a Si compound, for example SiO2 .
  • the dielectric layer 33 is made of a material that is highly compatible with the manufacturing process of semiconductor devices, the dielectric layer 33 can be easily formed.
  • the electronic device 30 shown in FIG. 15 has a dielectric layer 34 as a matching layer on the piezoelectric film 11 in addition to the parts that the electronic device 30 shown in FIG. 13 has. Thereby, acoustic matching can be achieved between the substrate 12 and the piezoelectric film 11. Further, for example, if the parts of the electronic device 30 other than the dielectric layer 34 are made of a material that becomes soft as the temperature rises, and the dielectric layer 34 is made of a material that becomes hard as the temperature rises, the electronic device 30 The temperature dependence of the dielectric constant or piezoelectric properties, ie the temperature properties, can be stabilized or adjusted.
  • dielectric layer 34 is a Si compound, for example SiO2 .
  • the dielectric layer 34 is made of a material that is highly compatible with the manufacturing process of semiconductor devices, the dielectric layer 34 can be easily formed.
  • Example 1 and Example 2 the film structure 10 described in Embodiment 1 using FIGS. 2 and 3 is formed as the film structure of Example 1, and a ZrO 2 layer 12b and a ZrO 2 layer 12b are formed on a Si layer 12a made of a Si substrate.
  • a test was conducted in which a piezoelectric film 11 made of c-axis oriented AlN was created via a Pt layer 13a.
  • a ZrO 2 layer 12b (see FIG. 3) was formed by electron beam evaporation.
  • the conditions at this time are shown below.
  • a Pt layer 13a (see FIG. 3) was formed on the ZrO 2 layer 12b (see FIG. 3) by sputtering.
  • the conditions at this time are shown below.
  • a piezoelectric film 11 made of AlN was formed on the Pt layer 13a (see FIG. 3) by sputtering.
  • Equipment AC sputtering equipment Pressure: 2Pa Vapor deposition source (target): Al Gas: Ar/ N2 Power: 250W Substrate temperature: 450°C Thickness: 600nm
  • a piezoelectric material made of c-axis oriented AlN is placed on the Si layer 12a made of a Si(111) substrate via a ZrO 2 layer 12b and a Pt layer 13a.
  • the film 11 produced was formed as the film structure of Example 2.
  • FIG. 16 shows the definition of the c-axis oriented surface.
  • FIG. 16 is a diagram showing the crystal structure of c-axis oriented AlN. As described above, AlN has a hexagonal wurtzite structure and is polarized in the c-axis direction. In FIG. 16, the shaded area represents the c-plane, and the c-axis represents the c(001) axis.
  • FIG. 17 is a graph showing an example of the ⁇ -2 ⁇ spectrum obtained by the XRD method of the film structure of Example 1
  • FIG. 18 is a graph showing an example of the ⁇ -2 ⁇ spectrum obtained by the XRD method of the film structure of Example 2. It is a graph.
  • the horizontal axes of the graphs in FIGS. 17 and 18 indicate the angle 2 ⁇ in the ⁇ -2 ⁇ scan, and the vertical axes of the graphs in FIGS. 17 and 18 indicate the intensity of the detected X-rays. 17 and 18 show a range of 20° ⁇ 2 ⁇ 90°.
  • the ⁇ -2 ⁇ spectrum has peaks corresponding to the (400) plane of Si, the (200) plane of Pt, and the (002) plane and (004) plane of AlN. Observed.
  • FIG. 18 in the ⁇ -2 ⁇ spectrum, Si (111) plane, Pt (111) plane, Pt (222) plane, AlN (002) plane, and AlN (004) plane A peak corresponding to the surface was observed.
  • the Pt layer 13a is (200) oriented on the Si layer 12a made of the Si (100) substrate, and the piezoelectric film made of c-axis oriented AlN is placed on the Pt layer 13a. It was confirmed that 11 were formed. Furthermore, in the film structure of Example 2, a Pt layer 13a is (111) oriented on a Si layer 12a made of a Si (111) substrate, and a piezoelectric film made of c-axis oriented AlN is placed on the Pt layer 13a. It was confirmed that 11 were formed.
  • Reciprocal lattice map measurement is a method of three-dimensionally observing the film to be measured and confirming fluctuations in lattice constants and inclinations of lattice planes.
  • FIG. 19 is a graph showing the results of reciprocal lattice map measurement of the membrane structure of Example 1
  • FIG. 20 is a graph showing the results of reciprocal lattice map measurement of the membrane structure of Example 2.
  • the peaks of AlN (002) and AlN (004) were confirmed in a vertical line and the planes were aligned. That is, in both the X-ray reciprocal lattice space mapping of the membrane structures of Example 1 and Example 2, 2 represents each of the AlN (002) plane and the AlN (004) plane of the piezoelectric film 11 made of AlN.
  • Two reciprocal lattice points were arranged in the Qz direction. Furthermore, since the reciprocal lattice points are clear, it can be said that there is little fluctuation.
  • FIG. 21 is a graph showing an example of the ⁇ scan spectrum obtained by the XRD method of the film structure of Example 1
  • FIG. 22 is a graph showing an example of the ⁇ scan spectrum obtained by the XRD method of the film structure of Example 2.
  • the horizontal axes of the graphs in FIGS. 21 and 22 indicate the angle ⁇ in the ⁇ scan
  • the vertical axes of the graphs in FIGS. 21 and 22 indicate the intensity of the detected X-rays.
  • FIGS. 21 and 22 show a range of 0° ⁇ 360°.
  • the angle between the measurement surface and the substrate surface is around 90° (in-plane measurement), and 2 ⁇ is the angle (59.35°) corresponding to the diffraction peak of the AlN (110) plane. ) is adjusted to be equal to ⁇ scan.
  • Example 1 in the ⁇ scan, 12 diffraction peaks are observed that are arranged at 30° intervals in the ⁇ direction (horizontal axis direction) and each represents the AlN (110) plane. It was done. Therefore, in the film structure of Example 1, the piezoelectric film 11 made of AlN is epitaxially grown on the Si layer 12a made of the Si (100) substrate via the ZrO 2 layer 12b and the Pt layer 13a. It was revealed. On the other hand, the crystal structure of AlN has six-fold symmetry about the c-axis. Therefore, the piezoelectric film 11 included in the film structure of Example 1 is considered to consist of two different domains (rotation components), one rotated by 30° relative to the other within the AlN (001) plane.
  • Example 2 in the ⁇ scan, six diffraction peaks are observed that are arranged at 60° intervals in the ⁇ direction (horizontal axis direction) and each represent the AlN (110) plane. It was done. Therefore, in the film structure of Example 2, the piezoelectric film 11 made of AlN is epitaxially grown on the Si layer 12a made of the Si(111) substrate via the ZrO 2 layer 12b and the Pt layer 13a. It was revealed. Further, as described above, the crystal structure of AlN has six-fold symmetry about the c-axis. Therefore, it is considered that the piezoelectric film 11 of the film structure of Example 2 consists of a single domain (rotation component).
  • FIG. 23A and 23B are diagrams for explaining lattice matching between the AlN (001) plane and the Pt (100) plane in the film structure of Example 1.
  • FIG. 23A shows a two-dimensional arrangement of Al atoms on the AlN (001) plane
  • FIG. 23B shows a secondary arrangement of Pt atoms on the Pt (100) plane.
  • 24A and 24B are diagrams for explaining lattice matching between the AlN (001) plane and the Pt (111) plane in the film structure of Example 2.
  • FIG. 24A shows a two-dimensional arrangement of Al atoms on the AlN (001) plane
  • FIG. 24B shows a two-dimensional arrangement of Pt atoms on the Pt (111) plane.
  • Example 1 two different rotational components that the piezoelectric film 11 has are referred to as a portion DM1 and a portion DM2. Further, when viewed from the c-axis direction, as shown in FIG. 23A, it is assumed that the portion DM2 is rotated by 30° counterclockwise with respect to the portion DM1. When this is done, as shown in FIG. 23A, the direction along the line segment LN1 of the AlN (001) plane (AlN ⁇ 1-10> direction (AlN ⁇ 1, -1,0> direction or AlN ⁇ 1, The spacing between Al atoms in the -1,0,0> direction) is 0.539 nm, and as shown in FIG. Twice the distance between Pt atoms (0.277 nm) is 0.557 nm, which is close to the above-mentioned 0.539 nm.
  • the direction along the line segment LN1 of the AlN (001) plane (AlN ⁇ 1-10> direction) is the diagonal direction of the crystal lattice of the Pt (100) plane shown in FIG. 23B, which is Pt ⁇ 011> direction
  • the portion DM2 has a direction along the line segment LN1 of the AlN (001) plane (AlN ⁇ 1-10> direction) that is a Pt (100) plane crystal as shown in FIG. 23B.
  • Epitaxial growth is performed in parallel to the Pt ⁇ 011> direction, which is the diagonal direction of the lattice.
  • the portion DM1 and the portion DM2 exist in equal proportions.
  • the portions DM1 and DM2 exist in equal proportions, in the ⁇ scan shown in FIG. 21, two sets of six diffraction peaks each having six-fold symmetry are superimposed with a 30° shift from each other. Therefore, it is thought that 12 diffraction peaks having 12-fold symmetry were observed.
  • the portion DM1 can be a 0° rotational component
  • the portion DM2 can be a 30° rotational component.
  • the Pt (111) plane has Pt atoms arranged two-dimensionally so that Pt has 6-fold symmetry as shown in FIG. 24B.
  • a hexagon made of Pt atoms can be found.
  • the length of one side of the hexagon formed by Al atoms on the AlN (001) plane is 0.311 nm
  • the length of one side of the hexagon formed by Al atoms is 0.311 nm.
  • the length of one side of the hexagon formed by six Pt atoms is 0.277 nm, which is close to the above-mentioned 0.311 nm.
  • the AlN film is epitaxially grown such that the hexagon formed by Al atoms on the AlN (001) plane matches the hexagon formed by six Pt atoms on the Pt (111) plane. Therefore, unlike the first embodiment, the second embodiment does not have two rotational components but only a single rotational component.
  • the above results can be summarized as follows.
  • the Si substrate as the Si layer 12a is a Si (100) substrate, or the SOI layer as the Si layer 12a is a Si (100) film, the electrode 13 is a Pt (100) film, and the piezoelectric material It is assumed that the film 11 is an AlN film made of AlN.
  • the AlN film has a portion DM1 and a portion DM2 that are epitaxially grown, and the AlN film in the portion DM2 is along the upper surface of the AlN substrate in the AlN ⁇ 110> direction (AlN ⁇ 1,1,0> direction or AlN ⁇ 1,1,-2,0> direction) is rotated by 30° clockwise or counterclockwise in plan view with respect to the AlN ⁇ 110> direction along the upper surface of the AlN substrate in portion DM1. ing.
  • the AlN ⁇ 110> direction along the top surface of the substrate of the AlN film is relative to the Pt ⁇ 010> direction along the top surface of the substrate of the electrode 13, which is a Pt(100) film. , rotated 15 degrees clockwise in plan view, and in the portion DM2, the AlN ⁇ 110> direction along the top surface of the substrate of the AlN film is the Pt ⁇ 110> direction along the top surface of the substrate of the electrode 13, which is a Pt(100) film. 010> direction, it is rotated by 15° counterclockwise in plan view.
  • the Si substrate as the Si layer 12a is a Si (111) substrate, or the SOI layer as the Si layer 12a is made of a Si (111) film, and the electrode 13 is a Pt (111) film,
  • the piezoelectric film 11 is an AlN film made of AlN.
  • the AlN ⁇ 110> direction along the upper surface of the substrate of the AlN film is epitaxially grown in a state parallel to the Pt ⁇ 110> direction along the upper surface of the Pt film. .
  • a person skilled in the art may appropriately add, delete, or change the design of each of the above-described embodiments, or may add, omit, or change the conditions of a process. As long as it has the gist, it is within the scope of the present invention.
  • Membrane structure 11 Piezoelectric film 12 Substrate 12a Si layer 12b ZrO 2 layer 12c Base 12d BOX layer 13 Electrode 13a Pt layer 13b SRO layer 13c Mo layer 13d W layer 20, 30 Electronic device 21 Hollow part 22, 22a, 22b, 31, 32 Electrodes 23, 24, 33, 34 Dielectric layers 31a, 32a Main bodies 31b, 32b Comb teeth DM1, DM2 Part DP1 Polarization direction DR1, DR2 Direction LN1 Line segment

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