WO2023153313A1 - Procédé de conception pour film conducteur - Google Patents

Procédé de conception pour film conducteur Download PDF

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Publication number
WO2023153313A1
WO2023153313A1 PCT/JP2023/003440 JP2023003440W WO2023153313A1 WO 2023153313 A1 WO2023153313 A1 WO 2023153313A1 JP 2023003440 W JP2023003440 W JP 2023003440W WO 2023153313 A1 WO2023153313 A1 WO 2023153313A1
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Prior art keywords
lattice
conductive particles
film
conductive film
conductive
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PCT/JP2023/003440
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English (en)
Japanese (ja)
Inventor
怜司 塚尾
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デクセリアルズ株式会社
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Priority to KR1020247026170A priority Critical patent/KR20240134339A/ko
Priority to CN202380020202.XA priority patent/CN118661350A/zh
Publication of WO2023153313A1 publication Critical patent/WO2023153313A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to a method for designing a conductive film.
  • a conductive film in which conductive particles are held in an insulating resin layer is widely used when mounting electronic components such as IC chips, including optical semiconductor elements such as mini LEDs and micro LEDs, on wiring boards.
  • anisotropic conductive film is a film that is interposed between a terminal row of an electronic component and a terminal row of a substrate when a connection structure is obtained, and exhibits conductivity only in the film thickness direction. , refers to a film that loses conductivity in the direction of the film surface.
  • anisotropic conductive connection relates to the connection between the terminal row of the electronic component and the terminal row of the board, and there is conductivity in the stacking direction of the electronic component and the board, but there is no conductivity in the arrangement direction of the terminals. means connection.
  • the arrangement of the conductive particles in the anisotropic conductive film is arranged in a grid pattern, and the arrangement direction of the conductive particles is inclined with respect to both the longitudinal direction and the lateral direction of the anisotropic conductive film. It has been proposed to let it be (Patent Document 1).
  • the width is just a margin (for example, 1 ⁇ m for a particle diameter of about 3 ⁇ m), but the anisotropic conductive film is required to prevent short circuits even in such cases.
  • the fan-out terminal row may Since the angle formed by the arrangement direction of the terminals and the longitudinal direction of the terminals varies sequentially, if the lattice axis is inclined with respect to the longitudinal direction of the film, the difference in the number of trapped conductive particles between the terminals increases. The arrangement state of the conductive particles trapped in the terminals is different between the terminals. As a result, problems such as difficulty in judging the quality of connection arise.
  • the space between the terminals should be less than 5 ⁇ m or a very small margin for the diameter of the conductive particles contained in the anisotropic conductive film (for example, with respect to the particle diameter of about 3 ⁇ m).
  • a new particle arrangement has been proposed to achieve a good anisotropic conductive connection even when the width is only 1 ⁇ m added.
  • a first arranging axis A1 extending in the longitudinal direction of the terminal and a first arranging axis A1 extending in the longitudinal direction of the conductive particles are arranged in the range of one terminal pitch.
  • Patent No. 6119718 Japanese Patent Application Laid-Open No. 2015-232660 JP 2020-095922 A
  • the present inventor As a method for designing the arrangement of conductive particles in a conductive film in which conductive particles are arranged in a grid pattern in an insulating resin layer, the present inventor first determined the number density of conductive particles according to the terminal pitch to be connected by the conductive film, Next, the pitch of the lattice axis is determined according to the number density, and then the inclination of the lattice axis is determined according to the length of the terminal to be connected with this conductive film, thereby making it possible to connect with a fine pitch.
  • the present invention has been completed based on the idea that the arrangement of the conductive particles for use can be easily designed.
  • the grid point B is selected, in which the straight line connecting the grid point and the grid point A makes the smallest angle with the lateral direction of the film.
  • the present invention it is possible to easily confirm the scavenging properties of conductive particles in terminals to be connected and the difficulty of short-circuiting by simulation.
  • the lattice axis is angled according to the size of the terminal to be connected, it is possible to prevent short circuits as much as possible at the set number density of the conductive particles, and to improve the ability to capture the conductive particles at each terminal. .
  • the arrangement of the conductive particles does not become complicated. Therefore, when producing a conductive film designed by the method of the present invention, it becomes easy to produce a master that determines the arrangement of the conductive particles, and the master can be produced by cutting as well as laser processing.
  • FIG. 4B is an explanatory diagram of the design method of the embodiment.
  • FIG. 5 is a cross-sectional view of the conductive film 10A cut in the film thickness direction.
  • FIG. 6 is a cross-sectional view of the conductive film 10B cut in the film thickness direction.
  • 7A is a diagram showing the particle arrangement in the connection state (i) of the conductive film of Experimental Example 1.
  • FIG. 7B is a diagram showing the particle arrangement in the connection state (ii) of the conductive film of Experimental Example 1.
  • FIG. 8A is a diagram showing the particle arrangement in the connection state (i) of the conductive film of Experimental Example 2.
  • FIG. 8B is a diagram showing the particle arrangement in the connection state (ii) of the conductive film of Experimental Example 2.
  • FIG. 9A is a diagram showing the particle arrangement in the connection state (i) of the conductive film of Experimental Example 3.
  • FIG. 9B is a diagram showing the particle arrangement in the connection state (ii) of the conductive film of Experimental Example 3.
  • FIG. 10A is a diagram showing the particle arrangement in the connection state (i) of the conductive film of Experimental Example 4.
  • FIG. 10B is a diagram showing the particle arrangement in the connection state (ii) of the conductive film of Experimental Example 4.
  • FIG. 11A is a diagram showing the particle arrangement in the connection state (i) of the conductive film of Experimental Example 5.
  • FIG. 11B is a diagram showing the particle arrangement in the connection state (ii) of the conductive film of Experimental Example 5.
  • FIG. 12A is a diagram showing the particle arrangement in the connection state (i) of the conductive film of Experimental Example 6.
  • FIG. 12B is a diagram showing the particle arrangement in the connection state (ii) of the conductive film of Experimental Example 6.
  • FIG. 13 is a diagram showing the particle arrangement in the connected state of the conductive film of Experimental Example 7.
  • FIG. 14 is a diagram showing the particle arrangement in the connected state of the conductive film of Experimental Example 8.
  • conductive particles having a predetermined particle size are held in the insulating resin layer at lattice points of a rectangular lattice or an orthorhombic lattice, and the lattice axis of the lattice is in the longitudinal direction of the conductive film.
  • This is a method of designing the arrangement of conductive particles in a conductive film when connecting terminals having a terminal length of L1 and a terminal width of L2 (L1 ⁇ L2) using a conductive film which is inclined to .
  • the gist of the design concept of the present invention will be described by taking as an example a case where conductive particles are held at lattice points of a square lattice.
  • the case where the conductive particles are held at lattice points of a rectangular lattice or an orthorhombic lattice can be similarly considered.
  • the optimum inclination angle ⁇ can be determined according to the terminal length and terminal width of the terminal to be connected with the conductive film.
  • the COG (Chip On Glass) terminal 1x indicated by the dashed line in FIG. is preferably increased.
  • the FOG (Film On Glass) terminal 1y indicated by the chain double-dashed line in FIG. 2 normally has a long terminal length L1 and a narrow terminal width L2, so it is preferable to reduce the inclination angle ⁇ .
  • FIG. 3A a particle arrangement is assumed in which the conductive particles P are located at lattice points of a square lattice whose lattice axes are orthogonal to the film longitudinal direction or the film lateral direction of the conductive film.
  • L1, the terminal width L2 (L1 ⁇ L2), and the arrangement pitch of the terminals are appropriately determined.
  • the arrangement pitch of the terminals is twice the terminal width
  • the number density of the conductive particles P in the conductive film is determined as follows according to the terminal length L1 and the terminal width L2.
  • the number density of the conductive particles can be determined according to the intended use of the conductive film based on the terminal length L1 and the terminal width L2.
  • the lower limit of the number density can be 500/mm 2 or more for applications where a sparse state is preferred, and 20,000/mm 2 or more, 40,000/mm 2 or more, or even 50,000 for applications where a dense state is preferred.
  • pcs/mm 2 or more can also be 1,500,000/mm 2 or less, 1,000,000/mm 2 or less, and further 100,000/mm 2 or less.
  • the number density of the conductive particles is set in the range of 12,000/mm 2 to 32,000/mm 2
  • the number density of the conductive particles is set in the range of 4000 pieces/mm 2 to 20000 pieces/mm 2
  • the terminal length L1 is 7 to 30 ⁇ m and the terminal width L2 is 7 to 20 ⁇ m
  • the number density of the conductive particles is preferably set in the range of 20,000/mm 2 to 100,000/mm 2 .
  • one grid is formed so that one or more conductive particles exist within the range of the terminal length L1.
  • the rectangular grid is rotated by an angle ⁇ (
  • the rotation angle ⁇ at this time is defined as the tilt angle of the lattice axis of the conductive film. That is, the final particle arrangement is the arrangement of the conductive particles P obtained by rotating the initial rectangular lattice at the rotation angle ⁇ so that the straight line connecting the lattice points A and B is in the lateral direction of the film.
  • the conductive film is made to correspond to the terminal of the fan-out type terminal row, as shown in FIG. , among the grid points at a distance of L1 or less from one grid point A, select the grid point B where the angle ⁇ ′ formed by the straight line connecting the grid point and the grid point A with the short direction of the film is the smallest.
  • the rectangular grid is rotated by an angle ⁇ around the grid point A so that the grid points A and B are overlapped in the lateral direction of the film.
  • the arrangement of the conductive particles at this time is the particle arrangement of the conductive film.
  • the particle size of the conductive particles can be appropriately determined according to the application of the conductive film of the present invention. .
  • ⁇ Position of conductive particles in film thickness direction When manufacturing a conductive film in which the arrangement of the conductive particles is determined according to the design method of the present invention, it is preferable that the positions of the conductive particles P in the film thickness direction are aligned. For example, as in the conductive film 10A shown in FIG. 5, when the conductive particles P are embedded in the laminate of the high viscosity insulating resin layer 2 and the low viscosity insulating resin layer 3, The embedding amount Lb of the conductive particles P in the film thickness direction can be made uniform so that the flexible resin layer 2 is flush. This makes it easier to stabilize the catching property of the conductive particles P on the terminal.
  • the conductive particles P may be exposed from the high-viscosity insulating resin layer 2, like the conductive film 10B shown in FIG. . Also, the conductive particles P may be completely embedded in the high-viscosity insulating resin layer 2 .
  • the embedding amount Lb is the surface of the high-viscosity insulating resin layer 2 in which the conductive particles P are embedded (the side on which the conductive particles P are exposed among the front and back surfaces of the high-viscosity insulating resin layer 2). surface, or when the conductive particles P are completely embedded in the high-viscosity insulating resin layer 2, the surface close to the conductive particles P), the contact at the center between adjacent conductive particles It means the distance between the plane 2p and the deepest part of the conductive particles P.
  • the high-viscosity insulating resin layer 2 is formed using a curable resin composition formed from a polymerizable compound and a polymerization initiator, similarly to the insulating resin layer of the anisotropic conductive film described in Japanese Patent No. 6187665. can do.
  • a polymerization initiator a thermal polymerization initiator may be used, a photopolymerization initiator may be used, or they may be used in combination.
  • a cationic polymerization initiator is used as the thermal polymerization initiator
  • an epoxy resin is used as the thermally polymerizable compound
  • a photoradical polymerization initiator is used as the photopolymerization initiator
  • an acrylate compound is used as the photopolymerizable compound.
  • a thermal anionic polymerization initiator may be used as the thermal polymerization initiator.
  • the thermal anionic polymerization initiator it is preferable to use a microcapsule-type latent curing agent comprising an imidazole modified product as a nucleus and the surface of the nucleus coated with polyurethane.
  • the low-viscosity insulating resin layer 3 is a resin layer whose minimum melt viscosity in the range of 30 to 200° C. is lower than that of the high-viscosity insulating resin layer 2 .
  • the low-viscosity insulating resin layer 3 is provided as necessary. To improve adhesion between electronic components by filling spaces formed by electrodes and bumps of the electronic components with a low-viscosity insulating resin layer 3 when the electronic components facing each other through the conductive film 10A are thermocompressed. can be done.
  • the layer thickness of the high-viscosity insulating resin layer 2 is set to the average particle diameter D of the conductive particles P in order to stably push the conductive particles P into the high-viscosity insulating resin layer 2 in the manufacturing process of the conductive film. , preferably 0.3 times or more, more preferably 0.6 times or more, still more preferably 0.8 times or more, and particularly preferably 1 time or more.
  • the upper limit of the layer thickness of the high-viscosity insulating resin layer 2 can be determined according to the terminal shape, terminal thickness, arrangement pitch, etc. of the electronic component to be connected.
  • the average particle size D of the conductive particles P is preferably 20 times or less, more preferably 15 times or less, because P becomes unnecessarily susceptible to the influence of resin flow.
  • the low-viscosity insulating resin layer 3 is provided on the conductive film as necessary.
  • the lower limit of the layer thickness of the low-viscosity insulating resin layer 3 is preferably 0.2 times or more the average particle diameter D of the conductive particles P, more preferably 1 times or more.
  • the upper limit of the layer thickness of the low-viscosity insulating resin layer 3 if it is too thick, the difficulty of lamination with the high-viscosity insulating resin layer 2 increases, so the average particle diameter D of the conductive particles P is preferably It is less than 50 times, more preferably 15 times or less, still more preferably 8 times or less.
  • the upper limit of the total thickness of the resin layer is the average particle diameter D of the conductive particles P. It is preferably 50 times or less, more preferably 15 times or less, and still more preferably 8 times or less. In order to prevent the thrust required for the pressing tool from becoming too high during thermocompression bonding, the total thickness of the resin layer is preferably 4 times or less, more preferably 3 times or less, the average particle diameter D of the conductive particles P.
  • the conductive film in which the arrangement of the conductive particles is determined according to the present invention can be a wound body in its product form.
  • the length of the wound body is not particularly limited, it is preferably 5000 m or less, more preferably 1000 m or less, and still more preferably 500 m or less from the viewpoint of handling of the shipment. On the other hand, from the point of mass production of the wound body, it is preferably 5 m or longer.
  • the film width in the wound body is not particularly limited, but the film width is preferably 0.3 mm or more from the viewpoint of the lower limit of the slit width when manufacturing a wound body by slitting a wide conductive film. From the viewpoint of stabilizing the width, it is more preferable to set the width to 0.5 mm or more.
  • the upper limit of the film width is not particularly limited, it is preferably 700 mm or less, more preferably 600 mm or less, from the viewpoint of portability and handling. From the viewpoint of practical handling of the conductive film, it is preferable to select the film width between 0.3 and 400 mm.
  • the film width is often less than several millimeters, and a relatively large electronic component (electrode wiring and mounting portion are provided on one side).
  • a film width of about 400 mm may be required.
  • the conductive film is often used with a film width of 0.5 to 5 mm.
  • the method itself for producing a conductive film in which the arrangement of conductive particles is designed according to the present invention is not particularly limited.
  • a transfer mold is first manufactured. A method of manufacturing the transfer mold will be described later.
  • the recesses of the transfer mold are filled with conductive particles, and a high-viscosity insulating resin layer formed on a release film is placed thereon and pressure is applied to press the conductive particles into the high-viscosity insulating resin layer.
  • a conductive film is produced by transferring conductive particles to a high-viscosity insulating resin layer, or further laminating a low-viscosity insulating resin layer on the conductive particles.
  • a conductive film may be produced by pressing into a flexible resin layer.
  • the transfer mold in addition to the one in which the concave portions are filled with conductive particles, the one in which a slightly adhesive agent is applied to the top surface of the convex portions so that the conductive particles adhere to the top surface may be used.
  • a method of arranging the conductive particles in a predetermined arrangement instead of using a transfer mold, a method of passing the conductive particles through through-holes provided in a predetermined arrangement, or the like may be used.
  • a transfer mold can be produced by applying a curable resin composition to the transfer mold master, curing it, and separating it from the master.
  • the conductive film in which the arrangement of conductive particles is designed according to the present invention effectively prevents shorts between terminals when the terminal row to be connected has a fine pitch, including (i) when connecting a micro LED to a display substrate. It is significant because it can be suppressed, and (ii) it is significant when at least one of the first electronic component and the second electronic component is made of a material that easily expands thermally, such as an FPC or a plastic substrate. Specifically, when connecting FOP (Film On Plastic), FOG (Film On Glass), COG (Chip On Glass), COP (Chip On Plastic), one of the above (i) and (ii) Or it is preferable because it satisfies both.
  • the significance of the present invention is further enhanced.
  • the fan-out arrangement is not limited to a mode in which the terminal row exists only on one of the components.
  • the conductive film in which the arrangement of the conductive particles is designed according to the present invention can also be applied to known arrangements such as peripheral arrangement.
  • Experimental examples 1-6 A conductive film having specifications shown in Table 1 was produced.
  • the particle size of the conductive particles was set to 3 ⁇ m.
  • the conductive particles are arranged at lattice points of a square lattice, and the angle (tilt angle) ⁇ between the lattice axis and the lateral direction of the conductive film is set to the value shown in Table 1. These particle arrangements are shown in FIGS. 7A, 7B-12A, 12B.
  • connection state when a first electronic component having a terminal row with a terminal length of 100 ⁇ m, a terminal width of 10 ⁇ m, and a terminal distance of 10 ⁇ m and a second electronic component having a similar terminal row are connected using the conductive film of each experimental example.
  • (i) the conductive particles in each terminal The minimum number of trapped particles, (b) the maximum number of particles between terminals, and (c) the maximum particle occupied area ratio between terminals were examined by simulation.
  • connection states (i) and (ii) the conductive connectivity is predicted from the minimum number of trapped conductive particles at each terminal obtained by the simulation, and evaluated as follows. A grade of C or higher was regarded as a pass, and an evaluation of D was regarded as a disqualification.
  • terminal length L1 was 30 ⁇ m
  • distance between conductors in the direction between terminals was simulated.
  • Particle diameter of conductive particles 2 ⁇ m
  • Particle density of conductive particles 12000/mm 2

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention permet une conception facile d'un agencement de particules conductrices destinées à un film conducteur qui peut s'adapter facilement à une connexion à une mini-DEL ou à une micro-DEL. À cet effet, un procédé de conception est destiné à agencer des particules conductrices (P) dans un film conducteur comportant les particules conductrices (P) maintenues dans une couche de résine isolante lorsque le film conducteur est utilisé pour connecter des bornes présentant une certaine longueur de borne (L1) et une certaine largeur de borne (L2). Le procédé consiste : à définir un agencement tel que les particules conductrices (P) soient au niveau de points de treillis d'un treillis rectangulaire ou d'un treillis rhombique et comportent un axe de treillis orthogonal au sens long ou au sens court du film conducteur ; à définir ensuite la densité de nombre ou similaire des particules conductrices (P) dans le film conducteur ; à sélectionner ensuite, parmi des points de treillis espacés d'un point de réseau (A) d'une longueur égale ou inférieure à la longueur de borne (L1), un point de réseau (B) présentant le plus petit angle formé entre une ligne droite reliant ledit point de treillis au point de treillis (A) et le sens court du film ; à faire tourner le treillis autour du point de treillis (A) afin d'obtenir un angle de rotation α du treillis dans lequel le point de treillis (A) et le point de treillis (B) se chevauchent dans le sens court du film ; et à déterminer l'angle d'inclinaison de l'axe de treillis du film conducteur en fonction de l'angle α.
PCT/JP2023/003440 2022-02-10 2023-02-02 Procédé de conception pour film conducteur WO2023153313A1 (fr)

Priority Applications (2)

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KR1020247026170A KR20240134339A (ko) 2022-02-10 2023-02-02 도전 필름의 설계 방법
CN202380020202.XA CN118661350A (zh) 2022-02-10 2023-02-02 导电膜的设计方法

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JP2022-019985 2022-02-10
JP2022019985A JP2023117329A (ja) 2022-02-10 2022-02-10 導電フィルムの設計方法

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KR (1) KR20240134339A (fr)
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TW (1) TW202347361A (fr)
WO (1) WO2023153313A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582199A (ja) * 1991-05-28 1993-04-02 Minato Electron Kk 異方導電性コネクタを有するコネクタ配置構造および異方導電性コネクタ
JP2016015205A (ja) * 2014-06-30 2016-01-28 デクセリアルズ株式会社 異方導電性フィルム及び接続構造体
WO2016068127A1 (fr) * 2014-10-28 2016-05-06 デクセリアルズ株式会社 Film conducteur anisotrope et structure de connexion
WO2016190424A1 (fr) * 2015-05-27 2016-12-01 デクセリアルズ株式会社 Film conducteur anisotrope et structure de connexion
JP2020027798A (ja) * 2018-08-08 2020-02-20 デクセリアルズ株式会社 異方性導電フィルム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6119718U (ja) 1984-07-11 1986-02-05 カルソニックカンセイ株式会社 表示装置
JP2015232660A (ja) 2014-06-10 2015-12-24 株式会社Ｊｏｌｅｄ 表示装置の製造方法及び表示装置
JP2020095922A (ja) 2018-12-14 2020-06-18 デクセリアルズ株式会社 異方性導電フィルム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582199A (ja) * 1991-05-28 1993-04-02 Minato Electron Kk 異方導電性コネクタを有するコネクタ配置構造および異方導電性コネクタ
JP2016015205A (ja) * 2014-06-30 2016-01-28 デクセリアルズ株式会社 異方導電性フィルム及び接続構造体
WO2016068127A1 (fr) * 2014-10-28 2016-05-06 デクセリアルズ株式会社 Film conducteur anisotrope et structure de connexion
WO2016190424A1 (fr) * 2015-05-27 2016-12-01 デクセリアルズ株式会社 Film conducteur anisotrope et structure de connexion
JP2020027798A (ja) * 2018-08-08 2020-02-20 デクセリアルズ株式会社 異方性導電フィルム

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TW202347361A (zh) 2023-12-01
CN118661350A (zh) 2024-09-17

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