WO2023144643A1 - 表示装置、及び表示装置の作製方法 - Google Patents

表示装置、及び表示装置の作製方法 Download PDF

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Publication number
WO2023144643A1
WO2023144643A1 PCT/IB2023/050298 IB2023050298W WO2023144643A1 WO 2023144643 A1 WO2023144643 A1 WO 2023144643A1 IB 2023050298 W IB2023050298 W IB 2023050298W WO 2023144643 A1 WO2023144643 A1 WO 2023144643A1
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Prior art keywords
layer
light
insulating layer
film
emitting
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English (en)
French (fr)
Japanese (ja)
Inventor
笹川慎也
方堂涼太
藤江貴博
樋浦吉和
菅谷健太郎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2023576250A priority Critical patent/JPWO2023144643A1/ja
Priority to US18/832,360 priority patent/US20250107355A1/en
Priority to KR1020247027040A priority patent/KR20240141763A/ko
Priority to CN202380016321.8A priority patent/CN118511674A/zh
Publication of WO2023144643A1 publication Critical patent/WO2023144643A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning

Definitions

  • One aspect of the present invention relates to a display device, a display module, and an electronic device.
  • One embodiment of the present invention relates to a method for manufacturing a display device.
  • one aspect of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input/output devices (e.g., touch panels), Their driving method or their manufacturing method can be mentioned as an example.
  • display devices are expected to be applied to various purposes.
  • applications of large display devices include home television devices (also referred to as televisions or television receivers), digital signage (digital signage), and PID (Public Information Display).
  • home television devices also referred to as televisions or television receivers
  • digital signage digital signage
  • PID Public Information Display
  • mobile information terminals such as smart phones and tablet terminals with touch panels are being developed.
  • Devices that require high-definition display devices include, for example, virtual reality (VR), augmented reality (AR), alternative reality (SR), and mixed reality (MR) ) are being actively developed.
  • VR virtual reality
  • AR augmented reality
  • SR alternative reality
  • MR mixed reality
  • a light-emitting device having a light-emitting device As a display device, for example, a light-emitting device having a light-emitting device (also called a light-emitting element) has been developed.
  • a light-emitting device also referred to as an EL device or EL element
  • EL the phenomenon of electroluminescence
  • EL is a DC constant-voltage power supply that can easily be made thin and light, can respond quickly to an input signal, and It is applied to a display device.
  • Patent Document 1 discloses a display device for VR using an organic EL device (also called an organic EL element).
  • An object of one embodiment of the present invention is to provide a display device with high display quality.
  • An object of one embodiment of the present invention is to provide a high-definition display device.
  • An object of one embodiment of the present invention is to provide a high-resolution display device.
  • An object of one embodiment of the present invention is to provide a highly reliable display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high display quality.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a high-definition display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a high-resolution display device.
  • An object of one embodiment of the present invention is to provide a highly reliable method for manufacturing a display device.
  • An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high yield.
  • One aspect of the invention includes a first light emitting device, a second light emitting device positioned adjacent to the first light emitting device, and a first insulating layer, wherein the first light emitting device , a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer, and a second light emitting device comprising the second pixel electrode and the , a second EL layer on the second pixel electrode, and a common electrode on the second EL layer, and a portion of the side surface of the first EL layer and a portion of the side surface of the second EL layer.
  • Part of the first insulating layer is arranged to face each other, and part of the first insulating layer is arranged at a position sandwiched between the side edge of the first EL layer and the side edge of the second EL layer.
  • One insulating layer is a display device that is in contact with part of the top surface of the first EL layer and part of the top surface of the second EL layer.
  • the second insulating layer in contact with the lower surface of the first insulating layer.
  • the second insulating layer preferably contains an inorganic material.
  • the second insulating layer preferably contains aluminum oxide.
  • the second insulating layer may overlap with part of the first EL layer. Further, in the above, the second insulating layer may overlap with part of the second EL layer.
  • the second insulating layer may be configured so as not to overlap with the first EL layer and the second EL layer.
  • part of the first insulating layer may be in contact with the side edge of the first EL layer and the side edge of the second EL layer.
  • a third insulating layer may be provided in contact with the upper surface of the first EL layer.
  • the third insulating layer preferably contains an inorganic material.
  • the third insulating layer preferably contains aluminum oxide.
  • a fourth insulating layer may be provided in contact with the upper surface of the second EL layer.
  • the fourth insulating layer preferably contains an inorganic material.
  • the fourth insulating layer preferably contains aluminum oxide.
  • the first insulating layer preferably contains an organic material. Moreover, in the above, it is preferable that the first insulating layer contains an acrylic resin.
  • Another embodiment of the present invention includes a first pixel electrode, a first EL layer covering the first pixel electrode, a first insulating layer in contact with a top surface of the first EL layer, and a second pixel.
  • An electrode, a second EL layer covering the second pixel electrode, and a second insulating layer in contact with the upper surface of the second EL layer are formed.
  • a third insulating layer is formed to cover the second EL layer and the second insulating layer, and a region sandwiched between the first pixel electrode and the second pixel electrode is formed over the third insulating layer.
  • a fourth insulating layer containing a photosensitive acrylic resin is formed so as to overlap, and a first wet etching treatment is performed using the fourth insulating layer as a mask to remove part of the third insulating layer. , the film thicknesses of the first insulating layer and the second insulating layer are reduced, heat treatment is performed, and the fourth insulating layer is formed in the region where the first insulating layer and the second insulating layer are thin.
  • the fourth insulating layer is deformed so as to be in contact with each other, and a second wet etching treatment is performed using the fourth insulating layer as a mask to remove at least part of the first insulating layer and at least one of the second insulating layer.
  • a common electrode is formed by covering four insulating layers, and an acidic solution is used in the first wet etching treatment and the second wet etching treatment.
  • the first EL layer and the second EL layer are formed by photolithography.
  • the acidic solution is preferably an aqueous solution containing phosphoric acid, hydrofluoric acid, and nitric acid.
  • a display device with high display quality can be provided.
  • One embodiment of the present invention can provide a high-definition display device.
  • One embodiment of the present invention can provide a high-resolution display device.
  • One embodiment of the present invention can provide a highly reliable display device.
  • a method for manufacturing a display device with high display quality can be provided.
  • a method for manufacturing a high-definition display device can be provided.
  • a method for manufacturing a high-resolution display device can be provided.
  • a highly reliable method for manufacturing a display device can be provided.
  • a method for manufacturing a display device with high yield can be provided.
  • FIG. 1A is a top view showing an example of a display device.
  • 1B and 1C are cross-sectional views showing examples of display devices.
  • 2A to 2F are cross-sectional views showing examples of display devices.
  • 3A to 3F are cross-sectional views showing examples of display devices.
  • 4A to 4C are cross-sectional views showing examples of display devices.
  • 5A and 5B are cross-sectional views showing an example of the display device.
  • 6A to 6D are cross-sectional views showing examples of display devices.
  • FIG. 7A is a top view showing an example of a display device.
  • FIG. 7B is a cross-sectional view showing an example of a display device;
  • 8A to 8I are diagrams showing configuration examples of light emitting devices.
  • 9A and 9B are diagrams showing configuration examples of light receiving devices.
  • 9C to 9E are diagrams showing configuration examples of the display device.
  • 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 11A to 11C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 12A to 12C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 13A to 13C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 14A to 14C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 15A to 15E are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 16A to 16C are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 17A and 17B are cross-sectional views illustrating an example of a method for manufacturing a display device.
  • 18A to 18G are diagrams showing examples of pixels.
  • 19A to 19K are diagrams showing examples of pixels.
  • 20A and 20B are perspective views showing an example of a display device.
  • 21A to 21C are cross-sectional views showing examples of display devices.
  • FIG. 22 is a cross-sectional view showing an example of a display device.
  • FIG. 23 is a cross-sectional view showing an example of a display device.
  • FIG. 24 is a cross-sectional view showing an example of a display device.
  • FIG. 25 is a cross-sectional view showing an example of a display device.
  • FIG. 26 is a cross-sectional view showing an example of a display device.
  • FIG. 27 is a perspective view showing an example of a display device.
  • FIG. 28A is a cross-sectional view showing an example of a display device; 28B and 28C are cross-sectional views showing examples of transistors.
  • 29A to 29D are cross-sectional views showing examples of display devices.
  • FIG. 30 is a cross-sectional view showing an example of a display device.
  • 31A to 31D are diagrams illustrating examples of electronic devices.
  • 32A to 32F are diagrams illustrating examples of electronic devices.
  • 33A to 33G are diagrams illustrating examples of electronic devices.
  • FIG. 34 is a planar SEM image according to this example.
  • 35A and 35B are cross-sectional STEM images according to this example.
  • 36A and 36B are cross-sectional STEM images according to this example.
  • film and “layer” can be interchanged depending on the case or situation.
  • conductive layer can be changed to the term “conductive film.”
  • insulating film can be changed to the term “insulating layer”.
  • devices using metal masks or FMM are sometimes referred to as devices with MM (metal mask) structures.
  • MM metal mask
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • an SBS side-by-side structure
  • the material and configuration can be optimized for each light-emitting device, so the degree of freedom in selecting the material and configuration increases, and it becomes easy to improve luminance and reliability.
  • holes or electrons are sometimes referred to as "carriers".
  • the hole injection layer or electron injection layer is referred to as a "carrier injection layer”
  • the hole transport layer or electron transport layer is referred to as a “carrier transport layer”
  • the hole blocking layer or electron blocking layer is referred to as a "carrier It is sometimes called a block layer.
  • the carrier injection layer, the carrier transport layer, and the carrier block layer described above may not be clearly distinguished from each other due to their cross-sectional shape, characteristics, or the like.
  • one layer may serve as two or three functions of the carrier injection layer, the carrier transport layer, and the carrier block layer.
  • a light-emitting device (also referred to as a light-emitting element) has an EL layer between a pair of electrodes.
  • the EL layer has at least a light-emitting layer.
  • the layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier-injection layer (hole-injection layer and electron-injection layer), a carrier-transport layer (hole-transport layer and electron-transport layer), and A carrier block layer (a hole block layer and an electron block layer) and the like are included.
  • a light-receiving device (also referred to as a light-receiving element) has an active layer that functions at least as a photoelectric conversion layer between a pair of electrodes.
  • an island-shaped light-emitting layer means that the light-emitting layer is physically separated from an adjacent light-emitting layer.
  • a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region where the angle (also called taper angle) between the inclined side surface and the substrate surface (or the side surface of the structure) is less than 90°. Note that the side surfaces of the structure and the substrate surface are not necessarily completely flat, and may be substantially planar with a fine curvature or substantially planar with fine unevenness.
  • the sacrificial layer is positioned above at least the light-emitting layer (more specifically, among the layers constituting the EL layer, the layer processed into an island shape), and during the manufacturing process, the light-emitting layer It has the function of protecting the layer.
  • the sacrificial layer may be referred to as a mask layer in this specification and the like.
  • a display device of one embodiment of the present invention includes a light-emitting device manufactured for each emission color, and is capable of full-color display.
  • an island-shaped light-emitting layer can be formed by vacuum deposition using a metal mask.
  • island-like structures are formed due to various influences such as precision of the metal mask, misalignment between the metal mask and the substrate, bending of the metal mask, and broadening of the contour of the deposited film due to vapor scattering.
  • the shape and position of the light-emitting layer in (1) deviate from the design, it is difficult to increase the definition and aperture ratio of the display device.
  • the layer profile may be blurred and the edge thickness may be reduced. In other words, the thickness of the island-shaped light-emitting layer formed using a metal mask may vary depending on the location.
  • the manufacturing yield will be low due to low dimensional accuracy of the metal mask and deformation due to heat or the like.
  • the light-emitting layer is processed into a fine pattern by a photolithography method without using a shadow mask such as a metal mask. Specifically, after forming a pixel electrode for each sub-pixel, a light-emitting layer is formed over a plurality of pixel electrodes. After that, the light-emitting layer is processed by photolithography to form one island-shaped light-emitting layer for one pixel electrode. Thereby, the light-emitting layer is divided for each sub-pixel, and an island-shaped light-emitting layer can be formed for each sub-pixel.
  • the light-emitting layer when the light-emitting layer is processed into an island shape, a structure in which the light-emitting layer is processed using a photolithography method can be considered. In the case of such a structure, the light-emitting layer may be damaged (damage due to processing, etc.) and the reliability may be significantly impaired.
  • a functional layer for example, a carrier block layer, a carrier transport layer, or a carrier injection layer, more specifically, a hole A sacrificial layer (also referred to as a mask layer, a protective layer, etc.) is formed on a block layer, an electron transport layer, or an electron injection layer, etc.
  • a method of processing the light emitting layer and the functional layer into an island shape is used.
  • an insulating layer functioning as a protective layer for the light-emitting layers (EL layers) may be provided to cover the plurality of sacrificial layers and the island-shaped light-emitting layers.
  • a layer located below the light-emitting layer (for example, a carrier injection layer, a carrier transport layer, or a carrier block layer, more specifically a hole injection layer, A hole-transporting layer, an electron-blocking layer, etc.) is preferably processed into islands in the same pattern as the light-emitting layer.
  • a layer located below the light-emitting layer is preferably processed into islands in the same pattern as the light-emitting layer.
  • the hole-injection layer can be processed into an island shape in the same pattern as the light-emitting layer; therefore, lateral leakage current substantially occurs between adjacent subpixels. or the lateral leak current can be made extremely small.
  • some layers constituting the EL layer are formed in an island shape for each color, and then at least part of the sacrificial layer and the protective layer for the EL layer are removed. Expose the top surface of the layer.
  • the processing of the protective layer for the sacrificial layer and the EL layer is preferably performed using a wet etching method. By using a wet etching method, damage to the EL layer can be reduced.
  • the remaining layers (sometimes referred to as common layers) constituting the EL layer and a common electrode (also referred to as an upper electrode) are formed in common (as one film) for the light emitting devices of each color.
  • a carrier injection layer and a common electrode can be formed in common for each color light emitting device.
  • the carrier injection layer is often a layer with relatively high conductivity among the EL layers. Therefore, the light-emitting device may be short-circuited when the carrier injection layer comes into contact with the side surface of a part of the EL layer formed like an island or the side surface of the pixel electrode. Note that even in the case where the carrier injection layer is provided in an island shape and the common electrode is formed in common for the light emitting devices of each color, the common electrode is in contact with the side surface of the EL layer or the side surface of the pixel electrode, so that light emission is prevented. The device may short out.
  • the display device of one embodiment of the present invention includes an insulating layer covering at least the side surface of the island-shaped EL layer. Further, the insulating layer preferably covers part of the top surface of the island-shaped EL layer.
  • the end of the insulating layer preferably has a taper shape with a taper angle of less than 90°. This can prevent disconnection of the common layer and the common electrode provided on the insulating layer having a tapered shape. Therefore, it is possible to suppress poor connection due to disconnection. In addition, it is possible to suppress an increase in electrical resistance due to local thinning of the common electrode due to a step.
  • discontinuity refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of the formation surface (for example, a step).
  • the insulating layer having a tapered shape is also exposed to the wet etching process. If an alkaline solution is used in the wet etching treatment, the tapered insulating layer may be eluted. As a result, part of the insulating layer having a tapered shape intrudes into the designed light emitting region, and pixel defects may be formed in the display device. Note that, in this specification and the like, pixel missing refers to a state in which a non-light-emitting region is formed in part of a designed light-emitting region.
  • the light-emitting region refers to a region where the pixel electrode, the EL layer, and the common electrode are overlapped with their interfaces being in contact with each other.
  • an alkaline solution refers to a solution having a hydrogen ion exponent (pH) of 7 or more.
  • an acidic solution for example, a mixed acid chemical solution containing phosphoric acid, hydrofluoric acid, and nitric acid
  • a mixed acid chemical solution containing phosphoric acid, hydrofluoric acid, and nitric acid is used in the wet etching process.
  • an acidic solution refers to a solution having a hydrogen ion exponent (pH) of less than 7.
  • part or all of the portions of the sacrificial layer and the protective layer for the EL layer that overlap with the insulating layer having a tapered shape can be removed.
  • part of the tapered insulating layer can be in contact with part of the EL layer.
  • the insulating layer having the tapered shape and the EL layer can be provided with good adhesion. Therefore, peeling of the tapered insulating layer and the island-shaped EL layer can be suppressed in the manufacturing process of the display device. Therefore, a display device with high display quality can be provided.
  • a highly reliable display device can be provided.
  • the island-shaped EL layer manufactured by the method for manufacturing the display device of one embodiment of the present invention is not formed using a fine metal mask, but is processed after the EL layer is formed over the entire surface. It is formed by Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has hitherto been difficult to achieve. Furthermore, since the light-emitting layer can be separately formed for each color, a display device with extremely vivid, high-contrast, and high-quality display can be realized. Further, by providing the sacrificial layer over the light-emitting layer, damage to the light-emitting layer during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.
  • the distance between adjacent light-emitting devices in the display device is less than 10 ⁇ m by a formation method using a fine metal mask, for example, a method using a photolithography method of one embodiment of the present invention can be used.
  • the distance between adjacent light-emitting devices, the distance between adjacent EL layers, or the distance between adjacent pixel electrodes is less than 10 ⁇ m, 8 ⁇ m or less, 5 ⁇ m or less, 3 ⁇ m or less, 2 ⁇ m or less, It can be narrowed down to 1.5 ⁇ m or less, 1 ⁇ m or less, or even 0.5 ⁇ m or less.
  • the distance between adjacent light emitting devices, the distance between adjacent EL layers, or the distance between adjacent pixel electrodes can be reduced to, for example, 500 nm or less, 200 nm or less. Below, it can be narrowed down to 100 nm or less, and further to 50 nm or less. As a result, the area of the non-light-emitting region that can exist between the two light-emitting devices can be greatly reduced, and the aperture ratio can be brought close to 100%.
  • the aperture ratio is 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, further 90% or more and less than 100%. It can also be realized.
  • the reliability of the display device can be improved by increasing the aperture ratio of the display device. More specifically, when the lifetime of a display device using an organic EL device and having an aperture ratio of 10% is used as a reference, the life of the display device has an aperture ratio of 20% (that is, the aperture ratio is twice the reference). The life is about 3.25 times longer, and the life of a display device with an aperture ratio of 40% (that is, the aperture ratio is four times the reference) is about 10.6 times longer. As described above, as the aperture ratio is improved, the density of the current flowing through the organic EL device required to obtain the same display can be reduced, so that the life of the display device can be extended. Since the aperture ratio of the display device of one embodiment of the present invention can be improved, the display quality of the display device can be improved. Further, as the aperture ratio of the display device is improved, the reliability (especially life) of the display device is significantly improved, which is an excellent effect.
  • the pattern of the island-shaped EL layer itself (which can be said to be a processing size) can also be made much smaller than when a fine metal mask is used.
  • the thickness varies between the center and the edge of the pattern. area becomes smaller.
  • an island-shaped EL layer can be formed with a uniform thickness. Therefore, almost the entire area of even a fine pattern can be used as a light emitting region. Therefore, a display device having both high definition and high aperture ratio can be manufactured. In addition, it is possible to reduce the size and weight of the display device.
  • the definition of the display device of one embodiment of the present invention is, for example, 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and still more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less. can do.
  • FIG. 1A shows a top view (which can also be called a plan view) of the display device 100.
  • the display device 100 has a display section in which a plurality of pixels 110 are arranged, and a connection section 140 outside the display section.
  • a plurality of sub-pixels 11R, 11G, and 11B are arranged in a matrix.
  • FIG. 1A shows sub-pixels of 2 rows and 6 columns, which constitute the pixels 110 of 2 rows and 2 columns.
  • the top surface shape of the sub-pixel shown in FIG. 1A corresponds to the top surface shape of the light emitting region.
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles and squares), polygons such as pentagons, and polygons with rounded corners, ellipses, and circles.
  • the circuit layout forming the sub-pixel is not limited to the range of the sub-pixel shown in FIG. 1A, and may be arranged outside it.
  • the transistors included in the sub-pixel 11R may be located within the range of the sub-pixel 11G shown in FIG. 1A, or part or all of them may be located outside the range of the sub-pixel 11R.
  • the sub-pixels 11R, 11G, and 11B have the same or approximately the same aperture ratio (size, which can also be called the size of the light-emitting region), but one embodiment of the present invention is not limited to this.
  • the aperture ratios of the sub-pixels 11R, 11G, and 11B can be determined appropriately.
  • the sub-pixels 11R, 11G, and 11B may have different aperture ratios, and two or more of them may have the same or substantially the same aperture ratio.
  • a stripe arrangement is applied to the pixels 110 shown in FIG. 1A.
  • a pixel 110 shown in FIG. 1A is composed of three sub-pixels, a sub-pixel 11R, a sub-pixel 11G, and a sub-pixel 11B.
  • the sub-pixels 11R, 11G, 11B have light-emitting devices that emit different colors of light.
  • the sub-pixels 11R, 11G, and 11B include sub-pixels of three colors of red (R), green (G), and blue (B), and three colors of yellow (Y), cyan (C), and magenta (M). sub-pixels and the like.
  • the number of types of sub-pixels is not limited to three, and may be four or more.
  • the four sub-pixels are R, G, B, and white (W) sub-pixels, R, G, B, and Y sub-pixels, and R, G, B, infrared light ( IR), four sub-pixels, and so on.
  • the row direction is sometimes called the X direction
  • the column direction is sometimes called the Y direction.
  • the X and Y directions intersect, for example perpendicularly (see FIG. 1A).
  • FIG. 1A shows an example in which sub-pixels of different colors are arranged side by side in the X direction and sub-pixels of the same color are arranged side by side in the Y direction.
  • FIG. 1A shows an example in which the connecting portion 140 is positioned below the display portion when viewed from above (which can also be referred to as a plan view), this is not particularly limited.
  • the connecting portion 140 may be provided at least one of the upper side, the right side, the left side, and the lower side of the display portion when viewed from above, and may be provided so as to surround the four sides of the display portion.
  • the shape of the upper surface of the connecting portion 140 may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like.
  • the number of connection parts 140 may be singular or plural.
  • FIG. 1B shows a cross-sectional view between the dashed-dotted line X1-X2 in FIG. 1A.
  • FIG. 1C shows a modification of FIG. 1B.
  • 2A-4C show enlarged views of a portion of the variant of FIG. 1B.
  • 5A and 5B show a modification of FIG. 1B.
  • 6A to 6D show cross-sectional views along the dashed-dotted line Y1-Y2 in FIG. 1A.
  • an insulating layer is provided on a layer 101 including a transistor, and light emitting devices 130R, 130G, and 130B are provided on the insulating layer, and the light emitting devices are covered.
  • a protective layer 131 is provided.
  • a substrate 120 is bonded onto the protective layer 131 with a resin layer 122 .
  • An insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in a region between adjacent light emitting devices.
  • FIG. 1B shows a plurality of cross sections of the insulating layer 125 and the insulating layer 127, but when the display device 100 is viewed from above, the insulating layer 125 and the insulating layer 127 are each connected to one.
  • the display device 100 can be configured to have one insulating layer 125 and one insulating layer 127, for example.
  • the display device 100 may have a plurality of insulating layers 125 separated from each other, and may have a plurality of insulating layers 127 separated from each other.
  • the insulating layer 127 may be connected to one, but the insulating layer 125 may be separated into a plurality of layers.
  • a display device of one embodiment of the present invention is a top emission type in which light is emitted in a direction opposite to a substrate over which a light-emitting device is formed, and light is emitted toward a substrate over which a light-emitting device is formed.
  • a bottom emission type bottom emission type
  • a double emission type dual emission type in which light is emitted from both sides may be used.
  • a stacked structure in which a plurality of transistors are provided on a substrate and an insulating layer is provided to cover these transistors can be applied.
  • An insulating layer over a transistor may have a single-layer structure or a stacked-layer structure.
  • FIG. 1B shows an insulating layer 255a, an insulating layer 255b over the insulating layer 255a, and an insulating layer 255c over the insulating layer 255b among the insulating layers over the transistor.
  • These insulating layers may have recesses between adjacent light emitting devices.
  • FIG. 1B and the like show an example in which a concave portion is provided in the insulating layer 255c.
  • the insulating layer 255c may not have recesses between adjacent light emitting devices. Note that the insulating layers (the insulating layers 255a to 255c) over the transistors can also be regarded as part of the layer 101 including the transistors.
  • Various inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film can be preferably used as the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c, respectively.
  • an oxide insulating film or an oxynitride insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film is preferably used.
  • a nitride insulating film or a nitride oxide insulating film such as a silicon nitride film or a silicon nitride oxide film is preferably used. More specifically, a silicon oxide film is preferably used for the insulating layers 255a and 255c, and a silicon nitride film is preferably used for the insulating layer 255b.
  • the insulating layer 255b preferably functions as an etching protection film.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. indicates
  • a configuration example of the layer 101 including transistors will be described later in Embodiment 6 and the like.
  • the light emitting device 130R emits red (R) light
  • the light emitting device 130G emits green (G) light
  • the light emitting device 130B emits blue (B) light.
  • the light-emitting device for example, it is preferable to use an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode).
  • OLED Organic Light Emitting Diode
  • QLED Quadantum-dot Light Emitting Diode
  • the light-emitting substance included in the light-emitting device include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF ) materials), and inorganic compounds (quantum dot materials, etc.).
  • LEDs such as micro LED (Light Emitting Diode), can also be used as a light emitting device.
  • the emission color of the light emitting device can be infrared, red, green, blue, cyan, magenta, yellow, white, or the like.
  • color purity can be enhanced by providing a light-emitting device with a microcavity structure.
  • Embodiment 2 can be referred to for the configuration and materials of the light-emitting device.
  • one electrode functions as an anode and the other electrode functions as a cathode.
  • the case where the pixel electrode functions as an anode and the common electrode functions as a cathode may be taken as an example.
  • the light-emitting device 130R includes a pixel electrode 111R on the insulating layer 255c, an island-shaped layer 113R on the pixel electrode 111R, a common layer 114 on the island-shaped layer 113R, and a common electrode 115 on the common layer 114. have.
  • the layer 113R and the common layer 114 may be collectively called an EL layer.
  • the light-emitting device 130G includes a pixel electrode 111G on the insulating layer 255c, an island-shaped layer 113G on the pixel electrode 111G, a common layer 114 on the island-shaped layer 113G, and a common electrode 115 on the common layer 114. have.
  • the layer 113G and the common layer 114 may be collectively called an EL layer.
  • the light-emitting device 130B includes a pixel electrode 111B on the insulating layer 255c, an island-shaped layer 113B on the pixel electrode 111B, a common layer 114 on the island-shaped layer 113B, and a common electrode 115 on the common layer 114. have.
  • the layer 113B and the common layer 114 may be collectively called an EL layer.
  • a layer provided in an island shape for each light-emitting device is referred to as a layer 113B, a layer 113G, or a layer 113R, and a layer shared by a plurality of light-emitting devices is referred to.
  • the layers 113R, 113G, and 113B, excluding the common layer 114 may be referred to as an island-shaped EL layer, an island-shaped EL layer, or the like.
  • each of the layers 113R, 113G, and 113B is processed into island shapes by photolithography. Therefore, each of the layers 113R, 113G, and 113B has a shape in which the angle formed by the top surface and the side surface is close to 90° at the ends thereof.
  • an organic film formed using a fine metal mask or the like tends to gradually become thinner toward the edge, and the upper surface is formed in a slope shape over a range of, for example, 1 ⁇ m or more and 10 ⁇ m or less. Therefore, the shape is such that it is difficult to distinguish between the upper surface and the side surface.
  • the layers 113R, 113G, and 113B are clearly distinguishable between the top surface and the side surface. As a result, in the adjacent layers 113R and 113G, a portion of the side surface of the layer 113R and a portion of the side surface of the layer 113G are arranged to face each other. This is the same for any combination of layers 113R, 113G, and 113B.
  • the layers 113R, 113G, and 113B are separated from each other.
  • an island-shaped EL layer for each light-emitting device, leakage current between adjacent light-emitting devices can be suppressed. Thereby, crosstalk due to unintended light emission can be prevented, and a display device with extremely high contrast can be realized. In particular, a display device with high current efficiency at low luminance can be realized.
  • the layers 113R, 113G, and 113B all have the same thickness in FIG. 1B, the present invention is not limited to this.
  • Each of the layers 113R, 113G, 113B may have different thicknesses.
  • a microcavity structure can be realized and the color purity in each light emitting device can be enhanced.
  • Each end of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B preferably has a tapered shape. Specifically, it is preferable that each end of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B has a taper shape with a taper angle of less than 90°. When the ends of these pixel electrodes have tapered shapes, the tapered shapes are also reflected in the layers 113R, 113G, and 113B provided along the side surfaces of the pixel electrodes. By tapering the side surface of the pixel electrode, coverage of the EL layer provided along the side surface of the pixel electrode can be improved.
  • the pixel electrodes 111R, 111G, and 111B may be collectively called the pixel electrode 111.
  • indium tin oxide In—Sn oxide, also referred to as ITO
  • indium silicon tin oxide In—Si—Sn oxide, also referred to as ITSO
  • indium zinc oxide In—Zn oxide
  • indium tungsten zinc oxide In-W-Zn oxide
  • alloys containing aluminum aluminum alloys
  • Al-Ni-La alloys of aluminum, nickel and lanthanum
  • elements belonging to Group 1 or Group 2 of the periodic table of elements not exemplified above e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), europium (Eu), ytterbium
  • Yb ytterbium
  • the pixel electrode 111 may be formed by appropriately stacking the above metals, alloys, electrically conductive compounds, mixtures thereof, and the like.
  • FIG. 1B and the like a configuration in which a part of the shape of the concave portion provided in the insulating layer 255c has the same taper angle as the taper shape of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B is illustrated. It is not limited to this.
  • the tapered shape of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B may be different from the tapered shape of the recess formed in the insulating layer 255c.
  • insulating layer also referred to as a partition wall, bank, spacer, etc.
  • no insulating layer is provided between the pixel electrode 111G and the layer 113G to cover the edge of the upper surface of the pixel electrode 111G.
  • no insulating layer is provided between the pixel electrode 111B and the layer 113B so as to cover the edge of the upper surface of the pixel electrode 111B. Therefore, the interval between adjacent light emitting devices can be made very narrow. Therefore, a high-definition or high-resolution display device can be obtained. Moreover, a mask for forming the insulating layer is not required, and the manufacturing cost of the display device can be reduced.
  • the viewing angle dependency of the display device of one embodiment of the present invention can be extremely reduced. By reducing the viewing angle dependency, it is possible to improve the visibility of the image on the display device.
  • the viewing angle (the maximum angle at which a constant contrast ratio is maintained when the screen is viewed obliquely) is 100° or more and less than 180°, preferably 150°. It can be in the range of 170° or more. It should be noted that the viewing angle described above can be applied to each of the vertical and horizontal directions.
  • a single structure (a structure having only one light emitting unit) or a tandem structure (a structure having a plurality of light emitting units) may be applied to the light emitting device of this embodiment.
  • the light-emitting unit has at least one light-emitting layer.
  • Layer 113R, layer 113G, and layer 113B have at least a light-emitting layer.
  • Layer 113R has a light-emitting layer that emits red light
  • layer 113G has a light-emitting layer that emits green light
  • layer 113B has a light-emitting layer that emits blue light.
  • layer 113R has a luminescent material that emits red light
  • layer 113G has a luminescent material that emits green light
  • layer 113B has a luminescent material that emits blue light.
  • the layer 113R has a structure having a plurality of light-emitting units that emit red light
  • the layer 113G has a structure that has a plurality of light-emitting units that emit green light
  • the layer 113B has a structure having a plurality of light-emitting units that emit green light.
  • a charge generating layer is preferably provided between each light emitting unit.
  • Layers 113R, 113G, and 113B are each one of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer. You may have more than
  • the layers 113R, 113G, and 113B may each have a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer in this order. Moreover, you may have an electron block layer between a hole transport layer and a light emitting layer. Further, a hole blocking layer may be provided between the electron transport layer and the light emitting layer. Moreover, you may have an electron injection layer on the electron transport layer.
  • the layers 113R, 113G, and 113B may each have an electron injection layer, an electron transport layer, a light emitting layer, and a hole transport layer in this order.
  • a hole blocking layer may be provided between the electron transport layer and the light emitting layer.
  • you may have an electron block layer between a hole transport layer and a light emitting layer.
  • a hole injection layer may be provided on the hole transport layer.
  • each of the layers 113R, 113G, and 113B preferably has a light-emitting layer and a carrier-transporting layer (electron-transporting layer or hole-transporting layer) on the light-emitting layer.
  • the layers 113R, 113G, and 113B each preferably have a light emitting layer and a carrier blocking layer (hole blocking layer or electron blocking layer) over the light emitting layer.
  • the layers 113R, 113G, and 113B each preferably have a light emitting layer, a carrier blocking layer over the light emitting layer, and a carrier transport layer over the carrier blocking layer.
  • the surfaces of the layers 113R, 113G, and 113B are exposed during the manufacturing process of the display device; Exposure can be suppressed, and damage to the light-emitting layer can be reduced. This can improve the reliability of the light emitting device.
  • the heat resistance temperature of the compounds contained in the layers 113R, 113G, and 113B is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower.
  • the glass transition point (Tg) of these compounds is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower.
  • the heat resistant temperatures of the compounds contained in the layers 113R, 113G, and 113B are not limited to the above ranges.
  • Layers 113R, 113G, and 113B in which the heat-resistant temperature of the contained compound is 100° C. or lower can also be used according to the design of the light-emitting device.
  • the heat resistance temperature of the functional layer provided on the light emitting layer is high. Further, it is more preferable that the functional layer provided in contact with the light-emitting layer has a high heat resistance temperature. Since the functional layer has high heat resistance, the light-emitting layer can be effectively protected, and damage to the light-emitting layer can be reduced.
  • the heat resistance temperature of the light-emitting layer is high. As a result, it is possible to prevent the light-emitting layer from being damaged by heating, thereby reducing the light-emitting efficiency and shortening the life of the light-emitting layer.
  • the light-emitting layer includes a light-emitting substance (also called a light-emitting material, a light-emitting organic compound, a guest material, etc.) and an organic compound (also called a host material, etc.). Since the light-emitting layer contains more organic compounds than light-emitting substances, the Tg of the organic compound can be used as an index of the heat-resistant temperature of the light-emitting layer.
  • Layers 113R, 113G, and 113B also include, for example, a first light-emitting unit, a charge generation layer on the first light-emission unit, and a second light-emission unit on the charge generation layer.
  • the second light-emitting unit preferably has a light-emitting layer and a carrier-transporting layer (electron-transporting layer or hole-transporting layer) on the light-emitting layer.
  • the second light emitting unit preferably has a light emitting layer and a carrier blocking layer (hole blocking layer or electron blocking layer) on the light emitting layer.
  • the second light-emitting unit preferably has a light-emitting layer, a carrier-blocking layer on the light-emitting layer, and a carrier-transporting layer on the carrier-blocking layer.
  • the light-emitting unit provided in the uppermost layer preferably has a light-emitting layer and one or both of a carrier transport layer and a carrier block layer over the light-emitting layer.
  • the edge of the layer 113R be located outside the edge of the pixel electrode 111R.
  • the pixel electrode 111R and the layer 113R are described below as an example, the same applies to the pixel electrode 111G and the layer 113G and the pixel electrode 111B and the layer 113B.
  • the layer 113R by configuring the layer 113R to cover the end portion of the pixel electrode 111R, the entire upper surface of the pixel electrode can be used as a light emitting region. This makes it easier to increase the aperture ratio compared to a configuration in which the end of the island-shaped EL layer is located inside the end of the pixel electrode.
  • contact between the pixel electrode and the common electrode 115 can be suppressed, so short-circuiting of the light-emitting device can be suppressed.
  • the end portion of the layer 113R to be located outside the end portion of the pixel electrode 111R, the light emitting region of the EL layer (that is, the region overlapping with the pixel electrode) and the EL layer are separated from each other.
  • the distance from the edge can be increased.
  • variations in the characteristics of the light-emitting device can be suppressed, and the reliability of the light-emitting device can be improved.
  • the pixel electrode 111R has a laminated structure of a conductive layer 111a, a conductive layer 111b on the conductive layer 111a, a conductive layer 111c on the conductive layer 111b, and a conductive layer 111d on the conductive layer 111c.
  • a conductive layer 111a can be
  • the light-emitting device has a microcavity structure
  • at least one of the conductive layers 111a to 111c is a conductive layer that reflects visible light
  • the conductive layer 111d is a conductive layer that transmits light.
  • the conductive layer 111d can function as an optical adjustment layer.
  • an oxide containing at least one selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used.
  • ITO indium oxide, indium tin oxide
  • ITSO indium zinc oxide containing silicon
  • the pixel electrode 111R when used as an anode, it is preferable to use a conductive film with a large work function (for example, a work function of 4.0 eV or more).
  • a large work function for example, a work function of 4.0 eV or more.
  • indium tin oxide or indium tin oxide containing silicon may be used for the conductive layer 111d.
  • the conductive layer 111d may have a laminated structure.
  • a titanium film and an ITSO film on the titanium film may be used.
  • Examples of the conductive layer reflecting visible light include aluminum, gold, platinum, silver, nickel, magnesium, tungsten, chromium, titanium, tantalum, molybdenum, iron, cobalt, copper, palladium, and the like.
  • Metallic materials or alloys containing these metallic materials can be used. Copper has a high reflectance of visible light and is preferred.
  • aluminum is preferable because it is easy to process because the electrode can be easily etched, and has high reflectance for visible light and near-infrared light.
  • At least one of the conductive layers 111a to 111c, particularly the conductive layer 111b, is made of a material such as silver or aluminum that has high reflectance over the entire wavelength range of visible light, whereby the light extraction efficiency of the light-emitting element is increased. In addition, color reproducibility can be improved.
  • lanthanum, neodymium, germanium, or the like may be added to the metal material or alloy.
  • an alloy containing aluminum (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La) may be used.
  • An alloy containing silver, palladium, and copper (APC) may also be used. Alloys containing silver, palladium, magnesium, and copper may also be used.
  • An alloy containing silver and copper is preferred because of its high heat resistance.
  • an alloy containing silver and magnesium may be used.
  • two or more layers of the above materials may be laminated for use.
  • Such stacks include, for example, aluminum and structures such as APC on the aluminum.
  • the conductive layer 111b is provided with the conductive film that reflects visible light
  • the conductive layers 111a and 111c be provided with conductive films having a function of protecting the conductive layer 111b.
  • oxidation and corrosion of the conductive film that reflects visible light can be suppressed.
  • materials for such metal films and metal oxide films include titanium and titanium oxide.
  • a titanium film may be used as the conductive layer 111a provided under the conductive layer 111b, and a light-transmitting titanium oxide film may be used as the conductive layer 111c provided over the conductive layer 111b.
  • a titanium oxide film may be formed by forming a titanium film by a sputtering method or the like and oxidizing the surface of the titanium film.
  • the conductive layer 111d may cover the conductive layers 111a to 111c.
  • the etchant can be prevented from coming into contact with the conductive layer 111b. Alteration due to corrosion or the like can be suppressed. Accordingly, the selection of materials for the conductive layers 111a to 111d can be widened.
  • pinholes may be formed in the conductive layer 111c. If a pinhole is formed in the conductive layer 111c, the conductive layer 111b might be etched by a developer when the resist mask over the conductive layers 111a to 111c is developed. Therefore, it is preferable not to excessively lengthen the development time of the resist mask during the development. For example, it is preferable to perform development for a period of time such that the removed portion of the resist mask is just removed, or for a slightly shorter period of time. If a thin portion of the resist remains in the portion where the resist mask is removed, it may be removed by ashing or the like.
  • an insulating layer 192 may be provided on one or a plurality of side surfaces of the conductive layers 111a to 111c.
  • the insulating layer 192 is formed in a sidewall shape on one or more side surfaces of the conductive layers 111a to 111c.
  • FIG. 4C shows an example in which the insulating layer 192 is provided in contact with the side surface of the conductive layer 111b.
  • an insulating layer that can be used for the insulating layer 255c may be used.
  • the conductive layer 111a When titanium is used for the conductive layer 111a, aluminum is used for the conductive layer 111b, and titanium oxide is used for the conductive layer 111c, as shown in FIG. On the other hand, it may have a receding shape.
  • steps are not formed on the side surfaces of the conductive layers 111a to 111c, so that the conductive layer 111d provided to cover the conductive layers 111a to 111c is prevented from being broken. can do.
  • the insulating layer 192 is formed by forming an insulating film to be the insulating layer 192 so as to cover the conductive layers 111a to 111c, and processing the insulating film by anisotropic etching such as dry etching. good.
  • the common layer 114 provided on the layers 113R, 113G, and 113B has, for example, an electron injection layer or a hole injection layer.
  • the common layer 114 may have a laminate of an electron transport layer and an electron injection layer, or may have a laminate of a hole transport layer and a hole injection layer.
  • Common layer 114 is shared by light emitting devices 130R, 130G and 130B.
  • the common electrode 115 on the common layer 114 is shared by the light emitting devices 130R, 130G, and 130B.
  • a common electrode 115 shared by a plurality of light-emitting devices is electrically connected to the conductive layer 123 provided in the connecting portion 140 (see FIGS. 6A and 6B).
  • the conductive layer 123 is preferably formed using the same material and in the same process as the pixel electrodes 111R, 111G, and 111B.
  • FIG. 6A shows an example in which a common layer 114 is provided on the conductive layer 123 and the conductive layer 123 and the common electrode 115 are electrically connected through the common layer 114 .
  • the common layer 114 may not be provided in the connecting portion 140 .
  • conductive layer 123 and common electrode 115 are directly connected.
  • a mask also referred to as an area mask or a rough metal mask to distinguish from a fine metal mask
  • the common layer 114 and the common electrode 115 are formed into a region where a film is formed. can be changed.
  • the insulating layer 127 is provided so as to fill the recesses between the light emitting devices. At least part of the insulating layer 127 is arranged at a position sandwiched between side ends of adjacent island-shaped EL layers. In addition, the insulating layer 127 can overlap with part of the top surface and the side surface of each of the layers 113R, 113G, and 113B. Here, part of the insulating layer 127 is in contact with part of the upper surface of the island-shaped EL layer of one adjacent light-emitting device and part of the upper surface of the island-shaped EL layer of the other adjacent light-emitting device. .
  • the insulating layer 127 is in contact with the side edge of the island-shaped EL layer of one adjacent light-emitting device and the side edge of the island-shaped EL layer of the other adjacent light-emitting device.
  • the insulating layer 127 preferably covers the insulating layer 125 .
  • the space between adjacent island-shaped EL layers can be filled; It is possible to reduce unevenness with a large difference in height and make it more flat. Therefore, coverage of the carrier injection layer, the common electrode, and the like can be improved.
  • the common layer 114 and the common electrode 115 are provided on the layer 113R, the layer 113G, the layer 113B, and the insulating layer 127.
  • the steps can be planarized, and coverage with the common layer 114 and the common electrode 115 can be improved. Therefore, it is possible to suppress poor connection due to disconnection.
  • the upper surface of the insulating layer 127 preferably has a more flat shape, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.
  • the upper surface of the insulating layer 127 preferably has a highly flat and smooth convex shape.
  • the common layer 114 (or the common electrode 115) can be used as the pixel electrodes 111R, 111G, 111B, and 111B.
  • contact with the side surfaces of the layers 113R, 113G, and 113B can be suppressed, and short circuits of the light emitting device can be suppressed. This can improve the reliability of the light emitting device.
  • the insulating layer 125 is provided in contact with the lower surface of the insulating layer 127 . For example, as shown in FIG. 1B, it is provided between insulating layer 127 and insulating layer 255c.
  • the insulating layer 125 is formed by partially remaining a film covering the island-shaped layers 113R, 113G, and 113B during the manufacturing process.
  • the insulating layer 125 functions as a film that protects the island-shaped layers 113R, 113G, and 113B at least during the manufacturing process.
  • the insulating layer 125 is provided between the insulating layer 127 and the insulating layer 255c so as not to overlap the adjacent island-shaped EL layer, but the present invention is not limited to this.
  • an insulating layer 125 may be provided overlying any one or more of layers 113R, 113G, 113B.
  • the sacrificial layer 118R is positioned on the layer 113R of the light emitting device 130R
  • the sacrificial layer 118G is positioned on the layer 113G of the light emitting device 130G
  • the layer 113B of the light emitting device 130B is positioned.
  • the sacrificial layer 118B is located.
  • the sacrificial layer has an opening in a portion overlapping with the light emitting region.
  • the sacrificial layer 118B is a part of the sacrificial layer provided in contact with the upper surface of the layer 113B when the layer 113B is processed.
  • the sacrificial layer 118G and the sacrificial layer 118R are part of the sacrificial layers that were provided when the layers 113G and 113R were formed, respectively.
  • part of the sacrificial layer used for protecting the EL layer may remain during manufacturing.
  • the same material may be used for any two or all of the sacrificial layer 118R, the sacrificial layer 118G, and the sacrificial layer 118B, or different materials may be used.
  • the sacrificial layer 118R, the sacrificial layer 118G, and the sacrificial layer 118B may be collectively referred to as the sacrificial layer 118 below.
  • one edge of sacrificial layer 118R (the edge opposite to the light emitting region side, the outer edge) is aligned or nearly aligned with the edge of layer 113R, and sacrificial layer 118R is located on layer 113R.
  • the other end of the sacrificial layer 118R (the end on the light emitting region side, the inner end) preferably overlaps the layer 113R and the pixel electrode 111R.
  • the other end of the sacrificial layer 118R is likely to be formed on the substantially flat surface of the layer 113R.
  • the sacrificial layer 118G and the sacrificial layer 118B are aligned or nearly aligned with the edge of layer 113R, and sacrificial layer 118R is located on layer 113R.
  • the other end of the sacrificial layer 118R (the end on the light emitting region side, the inner end) preferably overlaps the layer 113R and the pixel electrode 111R.
  • the sacrificial layer 118 remains, for example, between the insulating layer 125 and the top surface of the island-shaped EL layer (the layer 113R, the layer 113G, or the layer 113B).
  • the sacrificial layer will be described in detail in the fourth embodiment.
  • the ends are aligned or substantially aligned, and when the top surface shapes are matched or substantially matched, at least part of the outline overlaps between the stacked layers when viewed from the top.
  • the upper layer and the lower layer may be processed with the same mask pattern, or partially with the same mask pattern.
  • the outlines do not overlap, and the top layer may be located inside the bottom layer, or the top layer may be located outside the bottom layer, and in this case also the edges are roughly aligned, or the shape of the top surface are said to roughly match.
  • the sacrificial layers 118R, 118G, 118B and the insulating layer 125 may have different sizes for each sub-pixel in which they are provided.
  • the sacrificial layers 118R, 118G, and 118B and the insulating layer 125 are part of the films to be the sacrificial layers 118R, 118G, and 118B and part of the film to be the insulating layer 125. They are formed in a step of removing by wet etching treatment to expose the upper surfaces of the island-shaped layers 113R, 113G, and 113B.
  • wet etching treatment is performed for a sufficient time so that part of the sacrificial layers 118R, 118G, and 118B and the insulating layer 125 does not remain in the light emitting regions of the island-shaped layers 113R, 113G, and 113B. is preferred.
  • the films to be the sacrificial layers 118R, 118G, and 118B and the film to be the insulating layer 125 are removed up to a region overlapping with the insulating layer 127.
  • the amount of etching of the films that will become the sacrificial layers 118R, 118G, and 118B and the film that will become the insulating layer 125 may vary depending on the location within the substrate plane. Therefore, as shown in FIG. 1C, the sacrificial layers 118R, 118G, 118B and the insulating layer 125 may have different sizes for each sub-pixel.
  • the insulating layer 125 can be an insulating layer having an inorganic material.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used, for example.
  • the insulating layer 125 may have a single-layer structure or a laminated structure.
  • the oxide insulating film includes a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, and an oxide film.
  • a hafnium film, a tantalum oxide film, and the like are included.
  • the nitride insulating film include a silicon nitride film and an aluminum nitride film.
  • Examples of the oxynitride insulating film include a silicon oxynitride film, an aluminum oxynitride film, and the like.
  • the nitride oxide insulating film examples include a silicon nitride oxide film, an aluminum nitride oxide film, and the like.
  • aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer during formation of the insulating layer 127 described later.
  • an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an atomic layer deposition (ALD) method to the insulating layer 125, there are few pinholes and the EL layer can be used.
  • An insulating layer 125 having an excellent protective function can be formed.
  • the insulating layer 125 may have a layered structure of a film formed by an ALD method and a film formed by a sputtering method.
  • the insulating layer 125 may have a laminated structure of, for example, an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.
  • the insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen during at least the manufacturing process.
  • the insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen during at least the manufacturing process.
  • the insulating layer 125 preferably has a function of capturing or fixing at least one of water and oxygen (gettering) at least during the manufacturing process.
  • a barrier insulating layer indicates an insulating layer having barrier properties.
  • the barrier property is defined as a function of suppressing diffusion of a corresponding substance (also referred to as low permeability).
  • the corresponding substance has a function of capturing or fixing (gettering).
  • the insulating layer 125 has a function as a barrier insulating layer or a gettering function at least during the manufacturing process, impurities (typically water and at least one of oxygen) can be suppressed. With such a structure, a highly reliable light-emitting device and a highly reliable display device can be provided.
  • the insulating layer 125 preferably has a low impurity concentration. Accordingly, it is possible to suppress deterioration of the EL layer due to entry of impurities from the insulating layer 125 into the EL layer. In addition, by reducing the impurity concentration in the insulating layer 125, the barrier property against at least one of water and oxygen can be improved.
  • the insulating layer 125 preferably has a sufficiently low hydrogen concentration or carbon concentration, or preferably both.
  • any of the sacrificial layers 118B, 118G, and 118R and the insulating layer 125 may be recognized as one layer. That is, one layer is provided in contact with part of the top surface and side surface of each of the layers 113R, 113G, and 113B, and the insulating layer 127 covers at least part of the side surface of the one layer. may be observed as
  • the insulating layer 127 has a function of planarizing unevenness with a large height difference formed between adjacent light emitting devices. In other words, the presence of the insulating layer 127 has the effect of improving the flatness of the surface on which the common electrode 115 is formed.
  • An insulating layer containing an organic material can be suitably used as the insulating layer 127 .
  • the organic material it is preferable to use a photosensitive organic resin, for example, it is preferable to use a photosensitive resin composition containing an acrylic resin.
  • acrylic resin does not only refer to polymethacrylate esters or methacrylic resins, but may refer to all acrylic polymers in a broad sense.
  • an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimideamide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenolic resin, precursors of these resins, or the like is used.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127 .
  • a photoresist may be used as the photosensitive resin.
  • the photosensitive organic resin either a positive material or a negative material may be used.
  • part of the insulating layer 127 containing an organic material is in contact with part of the island-shaped EL layer, so that the interface between the insulating layer 127 and the island-shaped EL layer becomes the interface between the organic materials. becomes. Accordingly, adhesion between the insulating layer 127 and the island-shaped EL layer can be improved. With such a configuration, the display device 100 is less prone to film peeling, and the reliability of the light-emitting device can be improved. Moreover, the production yield of the light-emitting device can be increased.
  • the insulating layer 125 and the sacrificial layer 118 located near the insulating layer 127 can have various shapes. Examples of structures of the insulating layer 127, the insulating layer 125, and the sacrificial layer 118 are described with reference to FIGS. 2A to 3F.
  • 2A to 3F are cross-sectional enlarged views of a region including the insulating layer 127 and its periphery between the light emitting device 130R and the light emitting device 130G.
  • the insulating layer 127 between the light emitting device 130R and the light emitting device 130G will be described as an example. The same can be said for the insulating layer 127 and the like.
  • insulating layer 125 is provided overlying layers 113R and 113G, sacrificial layer 118R is provided in contact with the top surface of layer 113R, and sacrificial layer 118G is provided in contact with the top surface of layer 113G.
  • the insulating layer 125 contacts the top and side surfaces of the sacrificial layer 118R, the side surfaces of the layer 113R, the top surface of the insulating layer 255c, the top and side surfaces of the sacrificial layer 118G, and the side surfaces of the layer 113G.
  • the insulating layer 127 overlaps a portion of the top surface and side surfaces of the layer 113R and a portion of the top surface and side surfaces of the layer 113G through the insulating layer 125, and is in contact with the top surface and side surfaces of the insulating layer 125. Also, the insulating layer 127 is formed in the region between the two island-shaped EL layers (for example, the region between the layers 113R and 113G in FIG. 2A). At this time, at least part of the insulating layer 127 is the side edge of one EL layer (eg, the layer 113R in FIG. 2A) and the side edge of the other EL layer (eg, the layer 113G in FIG. 2A). It will be placed in a position sandwiched between parts.
  • the insulating layer 127 preferably has a tapered shape with a taper angle at the end in a cross-sectional view of the display device.
  • the taper angle is the angle between the side surface of the insulating layer 127 and the substrate surface.
  • the angle is not limited to the substrate surface, and may be the angle formed by the upper surface of the flat portion of the layer 113G or the upper surface of the flat portion of the pixel electrode 111G and the side surface of the insulating layer 127 .
  • the taper angle of the insulating layer 127 is less than 90°, preferably 60° or less, more preferably 45° or less, and even more preferably 20° or less.
  • the upper surface of the insulating layer 127 preferably has a convex shape.
  • the convex curved surface shape of the upper surface of the insulating layer 127 is preferably a shape that gently swells toward the center. Further, it is preferable that the convex curved surface portion in the central portion of the upper surface of the insulating layer 127 has a shape that is continuously connected to the tapered portion at the end portion.
  • an insulating layer 127 is preferably provided covering the sacrificial layer 118R, the sacrificial layer 118G, and the insulating layer 125, as shown in FIG. 2A. That is, as shown in FIG. 2A, one end of the insulating layer 127 is located outside one end of the insulating layer 125 and the end of the sacrificial layer 118R. Also, the other end of the insulating layer 127 is located outside one end of the insulating layer 125 and the end of the sacrificial layer 118G. With such a structure, unevenness of the surface on which the common layer 114 and the common electrode 115 are formed can be reduced, and the coverage of the common layer 114 and the common electrode 115 can be improved.
  • one end of the insulating layer 127 is in contact with part of the upper surface of the layer 113R, and the other end of the insulating layer 127 is in contact with part of the upper surface of the layer 113G.
  • One end of the insulating layer 127 is in contact with the vicinity of the interface between the layer 113R and the common layer 114, and the other end of the insulating layer 127 is in contact with the vicinity of the interface between the layer 113G and the common layer 114.
  • FIG. With such a structure, an interface between the insulating layer 127 containing an organic material and the layer 113R and an interface between the insulating layer 127 containing an organic material and the layer 113G are formed, and adhesion can be improved.
  • the first flat surface of the upper surface of the layer 113R refers to a portion where the uppermost surface of the layer 113R is partially flattened by reflecting the flat surface of the pixel electrode 111R. The same applies to the first flat surface of the upper surface of layer 113G.
  • the insulating layer 125 and the sacrificial layers 118R and 118G are not formed to the first planar surface of the top surface of the layer 113R and the first planar surface of the top surface of the layer 113G.
  • An insulating layer 125 and sacrificial layers 118R and 118G are formed up to the tapered portion and the tapered portion of the layer 113G.
  • the tapered portion of the layer 113R refers to a portion where the upper surface of the layer 113R is partially tapered reflecting the shape of the pixel electrode 111R. The same applies to the tapered portion of layer 113G.
  • the insulating layer 125 and the sacrificial layers 118R and 118G are not formed up to the tapered portion of the layer 113R and the tapered portion of the layer 113G, and the second flat surface of the upper surface of the layer 113R and the tapered portion of the layer 113G are formed.
  • An insulating layer 125 and sacrificial layers 118R and 118G are formed up to the second flat surface on the upper surface of the layer 113G.
  • the second flat surface of the upper surface of the layer 113R refers to a portion where the upper surface of the layer 113R is partially flattened by reflecting the flat surface of the insulating layer 255c. The same applies to the second flat surface of the upper surface of layer 113G.
  • the insulating layer 125 is not formed to the second planar surface on the top surface of the layer 113R and the second planar surface on the top surface of the layer 113G, and the side surfaces of the layer 113R and the side surfaces of the layer 113G.
  • the insulating layer 125 is formed up to. Note that the sacrificial layers 118R and 118G are removed.
  • the insulating layer 125 does not overlap the layers 113R and 113G, and is formed only between the insulating layer 127 and the insulating layer 255c. Therefore, the insulating layer 127 is in contact with the side edge of the layer 113R and the side edge of the layer 113G. Also, the insulating layer 125 does not necessarily completely cover the exposed portion of the insulating layer 255c. Part of the insulating layer 255c may be exposed from the insulating layer 125, and the insulating layer 127 may be in contact with part of the insulating layer 255c.
  • the insulating layer 125 and the sacrificial layers 118R and 118G have been removed, and the insulating layer 127 contacts the top surface of the layer 113R, the top surface of the layer 113G, and the top surface of the insulating layer 255c.
  • the contact area between the insulating layer 127 and the layers 113R and 113G increases, so that the adhesion can be further improved.
  • the insulating layer 125 and the sacrificial layers 118R and 118G have symmetrical shapes on the layer 113R side and the layer 113G side, but the structure is not limited to this.
  • the shapes of the insulating layer 125 and the sacrificial layers 118R and 118G may be asymmetrical on the layer 113R side and the layer 113G side.
  • the portion of the insulating layer 125 on the layer 113R side and the sacrificial layer 118R are the same as the structure shown in FIG. Same structure as shown. 3B to 3D shown below, the portion of the insulating layer 125 on the layer 113G side and the sacrificial layer 118G have the same structure as shown in FIG. 2A.
  • the structure shown in FIG. 3B is the same as the structure shown in FIG. 2C in the portion of the insulating layer 125 on the layer 113R side and the sacrificial layer 118R.
  • the structure shown in FIG. 3C is the same as the structure shown in FIG. 2D in the portion of the insulating layer 125 on the layer 113R side and the sacrificial layer 118R.
  • the structure shown in FIG. 3D is the same as the structure shown in FIG. 2E in the portion of the insulating layer 125 on the layer 113R side and the sacrificial layer 118R.
  • the portion of the insulating layer 125 on the layer 113R side and the sacrificial layer 118R are the same as the structure shown in FIG. Although the structure is substantially the same as shown, the portion of insulating layer 125 in contact with insulating layer 255c and the portion of insulating layer 125 in contact with the side surface of layer 113G are also removed.
  • the sacrificial layer 118R remains on the tapered portion of the layer 113R and the second flat surface of the upper surface of the layer 113R in the structure shown in FIG. 3E.
  • FIGS. 2A to 3F are examples, and the structures shown in FIGS. 2A to 3F may be appropriately combined.
  • the sacrificial layer 118 and the sacrificial layer 118 cover the end of the conductive layer 123, similarly to the structure shown in FIG. 2A.
  • An insulating layer 125 over 118 and an insulating layer 127 over the insulating layer 125 are formed.
  • the sacrificial layer 118 may be removed and the insulating layer 125 may not overlap the conductive layer 123, similar to the structure shown in FIG. 2E.
  • FIG. 6D similar to the structure shown in FIG. 2F, sacrificial layer 118 and insulating layer 125 may be removed.
  • the protective layer 131 may have a single layer structure or a laminated structure of two or more layers.
  • the conductivity of the protective layer 131 does not matter. At least one of an insulating film, a semiconductor film, and a conductive film can be used as the protective layer 131 .
  • the protective layer 131 By including an inorganic film in the protective layer 131, deterioration of the light-emitting device is suppressed, such as prevention of oxidation of the common electrode 115 and entry of impurities (moisture, oxygen, etc.) into the light-emitting device. Reliability can be improved.
  • the protective layer 131 inorganic insulating films such as oxide insulating films, nitride insulating films, oxynitride insulating films, and oxynitride insulating films can be used. Specific examples of these inorganic insulating films are as described for the insulating layer 125 .
  • the protective layer 131 preferably includes a nitride insulating film or a nitride oxide insulating film, and more preferably includes a nitride insulating film.
  • the protective layer 131 includes In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, or indium gallium zinc oxide (In—Ga—Zn oxide).
  • ITO In—Sn oxide
  • In—Zn oxide Ga—Zn oxide
  • Al—Zn oxide Al—Zn oxide
  • indium gallium zinc oxide In—Ga—Zn oxide
  • An inorganic film containing a material such as IGZO can also be used.
  • the inorganic film preferably has a high resistance, and specifically, preferably has a higher resistance than the common electrode 115 .
  • the inorganic film may further contain nitrogen.
  • the protective layer 131 When the light emitted from the light-emitting device is taken out through the protective layer 131, the protective layer 131 preferably has high transparency to visible light.
  • the protective layer 131 preferably has high transparency to visible light.
  • ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials with high transparency to visible light.
  • the protective layer 131 for example, a stacked structure of an aluminum oxide film and a silicon nitride film over the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film over the aluminum oxide film, or the like can be used. can be done. By using the stacked structure, entry of impurities (such as water and oxygen) into the EL layer can be suppressed.
  • impurities such as water and oxygen
  • the protective layer 131 may have an organic film.
  • protective layer 131 may have both an organic film and an inorganic film.
  • organic materials that can be used for the protective layer 131 include organic insulating materials that can be used for the insulating layer 127 .
  • the protective layer 131 may have a two-layer structure formed using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed using the ALD method, and the second layer of the protective layer 131 may be formed using the sputtering method.
  • a light shielding layer may be provided on the surface of the substrate 120 on the resin layer 122 side.
  • various optical members can be arranged outside the substrate 120 .
  • optical members include polarizing plates, retardation plates, light diffusion layers (diffusion films, etc.), antireflection layers, light collecting films, and the like.
  • an antistatic film that suppresses adhesion of dust, a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. Layers may be arranged.
  • a glass layer or a silica layer (SiO 2 x layer) as the surface protective layer, because surface contamination and scratching can be suppressed.
  • the surface protective layer DLC (diamond-like carbon), aluminum oxide (AlO x ), polyester-based material, polycarbonate-based material, or the like may be used.
  • a material having a high visible light transmittance is preferably used for the surface protective layer.
  • Glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc. can be used for the substrate 120 .
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting device is extracted.
  • a flexible material is used for the substrate 120, the flexibility of the display device can be increased and a flexible display can be realized.
  • a polarizing plate may be used as the substrate 120 .
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, and polyethersulfone (PES) resins.
  • polyamide resin nylon, aramid, etc.
  • polysiloxane resin cycloolefin resin
  • polystyrene resin polyamideimide resin
  • polyurethane resin polyvinyl chloride resin
  • polyvinylidene chloride resin polypropylene resin
  • PTFE polytetrafluoroethylene
  • ABS resin cellulose nanofiber, etc.
  • glass having a thickness that is flexible may be used.
  • a substrate having high optical isotropy has small birefringence (it can be said that the amount of birefringence is small).
  • the absolute value of the retardation (retardation) value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.
  • Films with high optical isotropy include triacetyl cellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.
  • TAC triacetyl cellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • the film when a film is used as the substrate, the film may absorb water, which may cause shape changes such as wrinkles in the display device. Therefore, it is preferable to use a film having a low water absorption rate as the substrate. For example, it is preferable to use a film with a water absorption of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • the display device may be provided with a colored layer.
  • a colored layer 132R that transmits red light is provided overlapping with the light emitting device 130R for red
  • a colored layer 132G that transmits green light is provided overlapping with the light emitting device 130G for green
  • a colored layer 132G that transmits green light is provided for overlapping with the light emitting device 130B for blue.
  • a colored layer 132B that transmits blue light can be provided thereon.
  • unnecessary wavelength light emitted from the red light emitting device 130R can be blocked using the colored layer 132R that transmits red light. With such a configuration, the color purity of light emitted from each light emitting device can be further increased.
  • the red light emitting device has been described above, the combination of the green light emitting device 130G and the colored layer 132G and the combination of the blue light emitting device 130B and the colored layer 132B have similar effects.
  • the light-emitting device has a microcavity structure, external light reflection can be further reduced.
  • the external light reflection can be sufficiently suppressed without using an optical member such as a circularly polarizing plate in the display device.
  • an optical member such as a circularly polarizing plate in the display device.
  • the colored layers of different colors have overlapping portions.
  • a region where the colored layers of different colors overlap each other can function as a light shielding layer. This makes it possible to further reduce external light reflection.
  • FIG. 5A shows an example in which colored layers 132R, 132G, and 132B are provided on light-emitting devices 130R, 130G, and 130B with a protective layer 131 interposed therebetween.
  • the alignment accuracy between the light emitting device and the colored layer can be improved.
  • color mixture can be suppressed and viewing angle characteristics can be improved, which is preferable.
  • the colored layer is preferably provided on the protective layer 131 having a flattening function.
  • the protective layer 131 preferably has an inorganic insulating film over the common electrode 115 and an organic insulating film over the inorganic insulating film.
  • FIG. 5B is an example in which a substrate 120 provided with colored layers 132R, 132G, and 132B is bonded onto a protective layer 131 with a resin layer 122.
  • FIG. 5B By providing the colored layers 132R, 132G, and 132B over the substrate 120, the temperature of the heat treatment in these formation steps can be increased.
  • FIG. 7A shows a top view of the display device 100 different from FIG. 1A.
  • a pixel 110 shown in FIG. 7A is composed of four types of sub-pixels, sub-pixels 11R, 11G, 11B, and 11S.
  • the sub-pixels 11R, 11G, 11B, and 11S can be configured to have light-emitting devices that emit light of different colors.
  • the sub-pixels 11R, 11G, 11B, and 11S include R, G, B, and W four-color sub-pixels, R, G, B, and Y four-color sub-pixels, and R, G, B, For example, four sub-pixels of IR.
  • the display device of one embodiment of the present invention may include a light-receiving device in a pixel.
  • three may be configured with light-emitting devices, and the remaining one may be configured with light-receiving devices.
  • a pn-type or pin-type photodiode can be used as the light receiving device.
  • a light-receiving device functions as a photoelectric conversion device (also referred to as a photoelectric conversion element) that detects light incident on the light-receiving device and generates an electric charge. The amount of charge generated from the light receiving device is determined based on the amount of light incident on the light receiving device.
  • the light receiving device can detect one or both of visible light and infrared light.
  • visible light for example, one or more of colors such as blue, purple, violet, green, yellow-green, yellow, orange, and red can be detected.
  • infrared light it is possible to detect an object even in a dark place, which is preferable.
  • organic photodiode having a layer containing an organic compound as the light receiving device.
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so that they can be applied to various display devices.
  • an organic EL device is used as the light emitting device and an organic photodiode is used as the light receiving device.
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • a manufacturing method similar to that for the light-emitting device can also be applied to the light-receiving device.
  • the island-shaped active layer (also referred to as a photoelectric conversion layer) of the light receiving device is not formed using a fine metal mask, but is formed by processing after forming a film that will be the active layer over the entire surface. Therefore, the island-shaped active layer can be formed with a uniform thickness. Further, by providing the sacrificial layer over the active layer, the damage to the active layer during the manufacturing process of the display device can be reduced, and the reliability of the light receiving device can be improved.
  • Embodiment 3 can be referred to for the configuration and materials of the light receiving device.
  • FIG. 7B shows a cross-sectional view between the dashed-dotted line X3-X4 in FIG. 7A.
  • 1B can be referred to for cross-sectional views along the dashed-dotted line X1-X2 in FIG. 7A
  • FIGS. 6A to 6D can be referred to for cross-sectional views along the dashed-dotted lines Y1-Y2.
  • the display device 100 includes an insulating layer provided on a layer 101 including a transistor, a light emitting device 130R and a light receiving device 150 provided on the insulating layer, and the light emitting device and the light receiving device are covered.
  • a protective layer 131 is provided, and the substrate 120 is bonded by a resin layer 122 .
  • FIG. 7B shows an example of light emitted from the light emitting device 130R toward the substrate 120 (see light Lem) and light entering the light receiving device 150 from the substrate 120 side (see light Lin).
  • the configuration of the light emitting device 130R is as described above.
  • the light receiving device 150 has a pixel electrode 111S on the insulating layer 255c, a layer 113S on the pixel electrode 111S, a common layer 114 on the layer 113S, and a common electrode 115 on the common layer 114.
  • Layer 113S includes at least the active layer.
  • the layer 113S includes at least an active layer and preferably has a plurality of functional layers.
  • functional layers include carrier transport layers (hole transport layer and electron transport layer) and carrier block layers (hole block layer and electron block layer).
  • layer 113S preferably has an active layer and a carrier blocking layer (hole blocking layer or electron blocking layer) or a carrier transporting layer (electron transporting layer or hole transporting layer) on the active layer.
  • the layer 113S is a layer provided in the light receiving device 150 and not provided in the light emitting device.
  • the functional layers other than the active layer included in layer 113S may have the same material as the functional layers other than the light-emitting layers included in layers 113R, 113G, and 113B.
  • the common layer 114 is a sequence of layers shared by the light-emitting and light-receiving devices.
  • a layer shared by the light-receiving device and the light-emitting device may have different functions in the light-emitting device and in the light-receiving device. Components are sometimes referred to herein based on their function in the light emitting device.
  • a hole-injecting layer functions as a hole-injecting layer in light-emitting devices and as a hole-transporting layer in light-receiving devices.
  • an electron-injecting layer functions as an electron-injecting layer in light-emitting devices and as an electron-transporting layer in light-receiving devices.
  • a layer shared by the light-receiving device and the light-emitting device may have the same function in the light-emitting device as in the light-receiving device.
  • a hole-transporting layer functions as a hole-transporting layer in both a light-emitting device and a light-receiving device
  • an electron-transporting layer functions as an electron-transporting layer in both a light-emitting device and a light-receiving device.
  • the layer 113S is preferably provided to cover the pixel electrode 111S in the same way as the layer 113R and the like, and is in contact with the insulating layer 255c around the pixel electrode 111S.
  • an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in a region between the adjacent light emitting device and light receiving device.
  • insulating layer 125 and insulating layer 127 have the same structure as that shown in FIG. 1B, but the structure is not limited to this.
  • the structures shown in FIGS. 2A-3F and combinations thereof may also be used.
  • a structure in which a sacrificial layer is provided on and in contact with the layer 113S may be employed.
  • FIG. 7A shows an example in which the sub-pixel 11S has a larger aperture ratio (which can also be called the size, the size of the light-emitting region or the light-receiving region) than the sub-pixels 11R, 11G, and 11B, but one embodiment of the present invention is not limited to this. .
  • the aperture ratios of the sub-pixels 11R, 11G, 11B, and 11S can be determined appropriately.
  • the aperture ratios of the sub-pixels 11R, 11G, 11B, and 11S may be different, and two or more may be equal or substantially equal.
  • the sub-pixel 11S may have a higher aperture ratio than at least one of the sub-pixels 11R, 11G, and 11B.
  • the wide light receiving area of the sub-pixel 11S may make it easier to detect the object.
  • the aperture ratio of the sub-pixel 11S may be higher than that of the other sub-pixels depending on the definition of the display device, the circuit configuration of the sub-pixels, and the like.
  • the sub-pixel 11S may have a lower aperture ratio than at least one of the sub-pixels 11R, 11G, and 11B. If the light-receiving area of the sub-pixel 11S is narrow, the imaging range is narrowed, and blurring of the imaging result can be suppressed and the resolution can be improved. Therefore, high-definition or high-resolution imaging can be performed, which is preferable.
  • the sub-pixel 11S can have a detection wavelength, definition, and aperture ratio that match the application.
  • an island-shaped EL layer is provided for each light-emitting device, so that generation of leakage current between subpixels can be suppressed. Thereby, crosstalk due to unintended light emission can be prevented, and a display device with extremely high contrast can be realized.
  • the display device of one embodiment of the present invention can achieve both high definition and high display quality.
  • part of the tapered insulating layer can be in contact with part of the island-shaped EL layer.
  • the interface between the tapered insulating layer and the island-shaped EL layer becomes the interface between the organic materials. Accordingly, the tapered insulating layer and the island-shaped EL layer can be provided with good adhesion. Therefore, peeling of the tapered insulating layer and the island-shaped EL layer can be suppressed in the manufacturing process of the display device. Accordingly, a display device with high display quality can be provided. In addition, a highly reliable display device can be provided.
  • the light-emitting device has an EL layer 763 between a pair of electrodes (lower electrode 761 and upper electrode 762).
  • EL layer 763 can be composed of multiple layers, such as layer 780 , light-emitting layer 771 , and layer 790 .
  • the light-emitting layer 771 has at least a light-emitting substance (also referred to as a light-emitting material).
  • the layer 780 includes a layer containing a substance with high hole injection property (hole injection layer), a layer containing a substance with high hole transport property (positive hole-transporting layer) and a layer containing a highly electron-blocking substance (electron-blocking layer).
  • the layer 790 includes a layer containing a substance with high electron injection properties (electron injection layer), a layer containing a substance with high electron transport properties (electron transport layer), and a layer containing a substance with high hole blocking properties (positive layer). pore blocking layer).
  • a structure having a layer 780, a light-emitting layer 771, and a layer 790 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 8A is referred to herein as a single structure.
  • FIG. 8B is a modification of the EL layer 763 included in the light emitting device shown in FIG. 8A. Specifically, the light-emitting device shown in FIG. It has a top layer 792 and a top electrode 762 on layer 792 .
  • layer 781 is a hole injection layer
  • layer 782 is a hole transport layer
  • layer 791 is an electron transport layer
  • layer 792 is an electron injection layer.
  • the layer 781 is an electron injection layer
  • the layer 782 is an electron transport layer
  • the layer 791 is a hole transport layer
  • the layer 792 is a hole injection layer.
  • FIGS. 8C and 8D a configuration in which a plurality of light-emitting layers (light-emitting layers 771, 772, and 773) are provided between layers 780 and 790 is also a variation of the single structure.
  • FIGS. 8C and 8D show an example having three light-emitting layers, the number of light-emitting layers in a single-structure light-emitting device may be two or four or more.
  • the single structure light emitting device may have a buffer layer between the two light emitting layers.
  • tandem structure a structure in which a plurality of light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785 (also referred to as an intermediate layer) is used herein.
  • a tandem structure a structure in which a plurality of light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785 (also referred to as an intermediate layer) is used herein.
  • charge generation layer 785 also referred to as an intermediate layer
  • tandem structure may also be called a stack structure.
  • FIGS. 8D and 8F are examples in which the display device has a layer 764 that overlaps the light emitting device.
  • Figure 8D is an example of layer 764 overlapping the light emitting device shown in Figure 8C
  • Figure 8F is an example of layer 764 overlapping the light emitting device shown in Figure 8E.
  • a conductive film that transmits visible light is used for the upper electrode 762 in order to extract light to the upper electrode 762 side.
  • the layer 764 one or both of a color conversion layer and a color filter (colored layer) can be used.
  • the light-emitting layers 771, 772, and 773 may be made of light-emitting substances that emit light of the same color, or even the same light-emitting substances.
  • a light-emitting substance that emits blue light may be used for the light-emitting layers 771 , 772 , and 773 .
  • blue light emitted by the light-emitting device can be extracted.
  • a color conversion layer is provided as layer 764 shown in FIG. and can extract red or green light.
  • both a color conversion layer and a colored layer are preferably used. Some of the light emitted by the light emitting device may pass through without being converted by the color conversion layer. By extracting the light transmitted through the color conversion layer through the colored layer, the colored layer absorbs light of colors other than the desired color, and the color purity of the light exhibited by the sub-pixels can be increased.
  • the light-emitting layers 771, 772, and 773 may be made of light-emitting substances that emit light of different colors.
  • the light emitted from the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 are complementary colors, white light emission can be obtained.
  • a single-structure light-emitting device preferably has a light-emitting layer containing a light-emitting substance that emits blue light and a light-emitting layer containing a light-emitting substance that emits visible light with a longer wavelength than blue.
  • a color filter may be provided as the layer 764 shown in FIG. 8D.
  • a desired color of light can be obtained by passing the white light through the color filter.
  • a single-structure light-emitting device has three light-emitting layers, a light-emitting layer containing a light-emitting substance that emits red (R) light, a light-emitting layer containing a light-emitting substance that emits green (G) light, and a light-emitting layer that emits blue light. It is preferable to have a light-emitting layer having a light-emitting substance (B) that emits light.
  • the stacking order of the light-emitting layers can be R, G, B from the anode side, or R, B, G, etc. from the anode side.
  • a buffer layer may be provided between R and G or B.
  • a light-emitting device with a single structure has two light-emitting layers
  • a light-emitting layer containing a light-emitting substance that emits blue (B) light and a light-emitting layer containing a light-emitting substance that emits yellow (Y) light. is preferred.
  • This structure is sometimes called a BY single structure.
  • a light-emitting device that emits white light preferably contains two or more types of light-emitting substances.
  • two or more light-emitting substances may be selected so that the light emission of each light-emitting substance has a complementary color relationship.
  • the emission color of the first light-emitting layer and the emission color of the second light-emitting layer have a complementary color relationship, it is possible to obtain a light-emitting device that emits white light as a whole. The same applies to light-emitting devices having three or more light-emitting layers.
  • the layers 780 and 790 may each independently have a laminated structure consisting of two or more layers.
  • the light-emitting layer 771 and the light-emitting layer 772 may be made of a light-emitting material that emits light of the same color, or even the same light-emitting material.
  • a light-emitting substance that emits blue light may be used for each of the light-emitting layers 771 and 772 .
  • blue light emitted by the light-emitting device can be extracted.
  • a color conversion layer is provided as layer 764 shown in FIG. and can extract red or green light.
  • both a color conversion layer and a colored layer are preferably used.
  • the light-emitting device having the configuration shown in FIG. 8E or 8F is used for the sub-pixels that emit light of each color
  • different light-emitting substances may be used depending on the sub-pixels.
  • a light-emitting substance that emits red light may be used for each of the light-emitting layers 771 and 772 .
  • a light-emitting substance that emits green light may be used for each of the light-emitting layers 771 and 772 .
  • a light-emitting substance that emits blue light may be used for each of the light-emitting layers 771 and 772 . It can be said that the display device having such a configuration employs a tandem structure light emitting device and has an SBS structure. Therefore, it is possible to have both the merit of the tandem structure and the merit of the SBS structure. As a result, a highly reliable light-emitting device capable of emitting light with high brightness can be realized.
  • light-emitting substances that emit light of different colors may be used for the light-emitting layers 771 and 772 .
  • the light emitted from the light-emitting layer 771 and the light emitted from the light-emitting layer 772 are complementary colors, white light emission is obtained.
  • a color filter may be provided as layer 764 shown in FIG. 8F. A desired color of light can be obtained by passing the white light through the color filter.
  • each of the light-emitting unit 763a and the light-emitting unit 763b may have two or more light-emitting layers.
  • FIGS. 8E and 8F exemplify a light-emitting device having two light-emitting units, but the present invention is not limited to this.
  • the light emitting device may have three or more light emitting units.
  • a structure having two light-emitting units may be called a two-stage tandem structure, and a structure having three light-emitting units may be called a three-stage tandem structure.
  • the light emitting unit 763a has layers 780a, 771 and 790a
  • the light emitting unit 763b has layers 780b, 772 and 790b.
  • layers 780a and 780b each have one or more of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • layers 790a and 790b each include one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. If the bottom electrode 761 is the cathode and the top electrode 762 is the anode, then layers 780a and 790a would have the opposite arrangement, and layers 780b and 790b would also have the opposite arrangement.
  • layer 780a has a hole-injection layer and a hole-transport layer over the hole-injection layer, and further includes a hole-transport layer. It may have an electron blocking layer on the layer.
  • Layer 790a also has an electron-transporting layer and may also have a hole-blocking layer between the light-emitting layer 771 and the electron-transporting layer.
  • Layer 780b also has a hole transport layer and may also have an electron blocking layer on the hole transport layer.
  • Layer 790b also has an electron-transporting layer, an electron-injecting layer on the electron-transporting layer, and may also have a hole-blocking layer between the light-emitting layer 772 and the electron-transporting layer. If the bottom electrode 761 is the cathode and the top electrode 762 is the anode, for example, layer 780a has an electron injection layer, an electron transport layer on the electron injection layer, and a positive electrode on the electron transport layer. It may have a pore blocking layer. Layer 790a also has a hole-transporting layer and may also have an electron-blocking layer between the light-emitting layer 771 and the hole-transporting layer.
  • Layer 780b also has an electron-transporting layer and may also have a hole-blocking layer on the electron-transporting layer.
  • Layer 790b also has a hole-transporting layer, a hole-injecting layer on the hole-transporting layer, and an electron-blocking layer between the light-emitting layer 772 and the hole-transporting layer. good too.
  • charge generation layer 785 has at least a charge generation region.
  • the charge-generating layer 785 has a function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.
  • FIGS. 8G to 8I there are configurations shown in FIGS. 8G to 8I.
  • FIG. 8G shows a configuration having three light emitting units.
  • a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series via charge generation layers 785, respectively.
  • Light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a
  • light-emitting unit 763b includes layer 780b, light-emitting layer 772, and layer 790b
  • light-emitting unit 763c includes , a layer 780c, a light-emitting layer 773, and a layer 790c.
  • a structure applicable to the layers 780a and 780b can be used for the layer 780c
  • a structure applicable to the layers 790a and 790b can be used for the layer 790c.
  • light-emitting layers 771, 772, and 773 preferably have light-emitting materials that emit light of the same color.
  • the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 each include a red (R) light-emitting substance (so-called three-stage tandem structure of R ⁇ R ⁇ R), the light-emitting layer 771, and the light-emitting layer 772 and 773 each include a green (G) light-emitting substance (so-called G ⁇ G ⁇ G three-stage tandem structure), or the light-emitting layers 771, 772, and 773 each include a blue light-emitting layer.
  • R red
  • G green
  • a structure (B) including a light-emitting substance (a so-called three-stage tandem structure of B ⁇ B ⁇ B) can be employed.
  • a ⁇ b means that a light-emitting unit having a light-emitting substance that emits light b is provided over a light-emitting unit that has a light-emitting substance that emits light a through a charge generation layer.
  • a, b denote colors.
  • a light-emitting substance that emits light of a different color may be used for part or all of the light-emitting layers 771, 772, and 773.
  • the combination of the emission colors of the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 is, for example, a configuration in which any two are blue (B) and the remaining one is yellow (Y), and any one is red (R ), the other one is green (G), and the remaining one is blue (B).
  • FIG. 8H shows a configuration in which two light-emitting units (light-emitting unit 763 a and light-emitting unit 763 b ) are connected in series via the charge generation layer 785 .
  • the light-emitting unit 763a includes a layer 780a, a light-emitting layer 771a, a light-emitting layer 771b, a light-emitting layer 771c, and a layer 790a. and a light-emitting layer 772c and a layer 790b.
  • the configuration shown in FIG. 8H is a two-stage tandem structure of W ⁇ W. Note that there is no particular limitation on the stacking order of the light-emitting substances that are complementary colors. A practitioner can appropriately select the optimum stacking order. Although not shown, a three-stage tandem structure of W ⁇ W ⁇ W or a tandem structure of four or more stages may be employed.
  • a two-stage tandem structure of B ⁇ Y or Y ⁇ B having a light-emitting unit that emits yellow (Y) light and a light-emitting unit that emits blue (B) light.
  • Two-stage tandem structure of R ⁇ G ⁇ B or B ⁇ R ⁇ G having a light-emitting unit that emits (R) and green (G) light and a light-emitting unit that emits blue (B) light, blue (B)
  • a three-stage tandem structure of B ⁇ Y ⁇ B having, in this order, a light-emitting unit that emits light of yellow (Y), and a light-emitting unit that emits light of blue (B).
  • a light-emitting unit that emits yellow-green (YG) light, and a light-emitting unit that emits blue (B) light in this order, a three-stage tandem structure of B ⁇ YG ⁇ B, blue A three-stage tandem structure of B ⁇ G ⁇ B having, in this order, a light-emitting unit that emits (B) light, a light-emitting unit that emits green (G) light, and a light-emitting unit that emits blue (B) light, etc. is mentioned.
  • a ⁇ b means that one light-emitting unit includes a light-emitting substance that emits light a and a light-emitting substance that emits light b.
  • a light-emitting unit having one light-emitting layer and a light-emitting unit having a plurality of light-emitting layers may be combined.
  • a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series via charge generation layers 785, respectively.
  • Light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a
  • light-emitting unit 763b includes layer 780b, light-emitting layer 772a, light-emitting layer 772b, light-emitting layer 772c, and layer 790b.
  • the light-emitting unit 763c includes a layer 780c, a light-emitting layer 773, and a layer 790c.
  • the light-emitting unit 763a is a light-emitting unit that emits blue (B) light
  • the light-emitting unit 763b emits red (R), green (G), and yellow-green (YG) light.
  • a three-stage tandem structure of B ⁇ R, G, and YG ⁇ B, in which the light-emitting unit 763c is a light-emitting unit that emits blue (B) light, or the like can be applied.
  • the order of the number of stacked light-emitting units and the colors is as follows: from the anode side, a two-stage structure of B and Y; a two-stage structure of B and light-emitting unit X; a three-stage structure of B, Y, and B; , B, and the order of the number of layers of light-emitting layers and the colors in the light-emitting unit X is, from the anode side, a two-layer structure of R and Y, a two-layer structure of R and G, and a two-layer structure of G and R.
  • a two-layer structure, a three-layer structure of G, R, and G, or a three-layer structure of R, G, and R can be used.
  • another layer may be provided between the two light-emitting layers.
  • a conductive film that transmits visible light is used for the electrode on the light extraction side of the lower electrode 761 and the upper electrode 762 .
  • a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
  • the display device has a light-emitting device that emits infrared light
  • a conductive film that transmits visible light and infrared light is used for the electrode on the side from which light is extracted
  • a conductive film is used for the electrode on the side that does not extract light.
  • a conductive film that reflects visible light and infrared light is preferably used.
  • a conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted.
  • the electrode is preferably placed between the reflective layer and the EL layer 763 . That is, the light emitted from the EL layer 763 may be reflected by the reflective layer and extracted from the display device.
  • metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be used as appropriate.
  • specific examples of such materials include aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, Examples include metals such as yttrium and neodymium, and alloys containing these in appropriate combinations.
  • Examples of the material include indium tin oxide (In—Sn oxide, also referred to as ITO), indium silicon tin oxide (In—Si—Sn oxide, also referred to as ITSO), and indium zinc oxide (In—Zn oxide). oxide), and indium tungsten zinc oxide (In—W—Zn oxide).
  • examples of the material include alloys containing aluminum (aluminum alloys) such as alloys of aluminum, nickel, and lanthanum (Al—Ni—La).
  • Such materials also include silver-magnesium alloys and alloys containing silver, such as silver-palladium-copper alloys (APC).
  • elements belonging to Group 1 or Group 2 of the periodic table of elements not exemplified above e.g., lithium, cesium, calcium, strontium
  • europium e.g., europium
  • rare earth metals such as ytterbium
  • a pair of electrodes (a pixel electrode and a common electrode) of a light-emitting device may be formed by appropriately laminating the above metals, alloys, electrically conductive compounds, mixtures thereof, and the like.
  • the lower electrode 761 when the lower electrode 761 is used as a pixel electrode, a laminated conductive film in which a titanium film, an aluminum film, a titanium film (a titanium oxide film may be used), and an ITO film are laminated in this order may be used as the lower electrode 761 . .
  • a laminated conductive film in which an APC film and an ITO film are laminated may be used as the lower electrode 761 .
  • the upper electrode 762 is used as a common electrode, a laminated conductive film in which an alloy film of magnesium and aluminum and an ITO film are laminated in this order may be used.
  • an ITSO film may be used instead of the ITO film.
  • a micro optical resonator (microcavity) structure is preferably applied to the light emitting device. Therefore, one of the pair of electrodes included in the light-emitting device is preferably an electrode (semi-transmissive/semi-reflective electrode) that is transparent and reflective to visible light, and the other is an electrode that is reflective to visible light ( reflective electrode). Since the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting device can be enhanced.
  • the semi-transmissive/semi-reflective electrode has a laminated structure of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode having transparency to visible light (also referred to as a transparent electrode).
  • a transparent electrode also referred to as a transparent electrode
  • the light transmittance of the transparent electrode is set to 40% or more.
  • an electrode having a transmittance of 40% or more for visible light (light having a wavelength of 400 nm or more and less than 750 nm) as the transparent electrode of the light emitting device.
  • the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
  • the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.
  • the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • a light-emitting device has at least a light-emitting layer. Further, in the light-emitting device, layers other than the light-emitting layer include a substance with high hole-injection property, a substance with high hole-transport property, a hole-blocking material, a substance with high electron-transport property, an electron-blocking material, and a layer with high electron-injection property. A layer containing a substance, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like may be further included.
  • the light-emitting device has, in addition to the light-emitting layer, one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer. can be configured.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used in the light-emitting device, and inorganic compounds may be included.
  • Each of the layers constituting the light-emitting device can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • the luminescent layer has one or more luminescent substances.
  • a substance emitting light of blue, purple, blue-violet, green, yellow-green, yellow, orange, red, or the like is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Luminous materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. mentioned.
  • Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
  • organometallic complexes especially iridium complexes
  • platinum complexes, rare earth metal complexes, and the like, which serve as ligands, can be mentioned.
  • the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • One or both of a highly hole-transporting substance (hole-transporting material) and a highly electron-transporting substance (electron-transporting material) can be used as the one or more organic compounds.
  • a highly hole-transporting substance hole-transporting material
  • a highly electron-transporting substance electron-transporting material
  • electron-transporting material a material having a high electron-transporting property that can be used for the electron-transporting layer, which will be described later, can be used.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex exhibiting light emission at a wavelength that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting device can be realized at the same time.
  • the hole-injecting layer is a layer that injects holes from the anode into the hole-transporting layer, and contains a material with high hole-injecting properties.
  • highly hole-injecting materials include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
  • hole-transporting material a material having a high hole-transporting property that can be used for the hole-transporting layer, which will be described later, can be used.
  • oxides of metals belonging to groups 4 to 8 in the periodic table can be used.
  • Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide.
  • molybdenum oxide is particularly preferred because it is stable even in the atmosphere, has low hygroscopicity, and is easy to handle.
  • An organic acceptor material containing fluorine can also be used.
  • Organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used.
  • a material with a high hole-injection property a material containing a hole-transporting material and an oxide of a metal belonging to Groups 4 to 8 in the above-described periodic table (typically molybdenum oxide) is used. may be used.
  • the hole-transporting layer is a layer that transports the holes injected from the anode through the hole-injecting layer to the light-emitting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
  • hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other highly hole-transporting materials. is preferred.
  • ⁇ -electron-rich heteroaromatic compounds e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.
  • aromatic amines compounds having an aromatic amine skeleton
  • other highly hole-transporting materials is preferred.
  • the electron blocking layer is provided in contact with the light emitting layer.
  • the electron blocking layer is a layer containing a material capable of transporting holes and blocking electrons.
  • a material having an electron blocking property can be used among the above hole-transporting materials.
  • the electron blocking layer has hole transport properties, it can also be called a hole transport layer. Moreover, the layer which has electron blocking property can also be called an electron blocking layer among hole transport layers.
  • the electron transport layer is a layer that transports electrons injected from the cathode through the electron injection layer to the light emitting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
  • electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, ⁇ -electrons including oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds
  • a material having a high electron-transport property such as a deficient heteroaromatic compound can be used.
  • the hole blocking layer is provided in contact with the light emitting layer.
  • the hole-blocking layer is a layer containing a material that has electron-transport properties and can block holes. Among the above electron-transporting materials, materials having hole-blocking properties can be used for the hole-blocking layer.
  • the hole-blocking layer can also be called an electron-transporting layer because it has electron-transporting properties. Moreover, among the electron transport layers, a layer having hole blocking properties can also be referred to as a hole blocking layer.
  • the electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer that contains a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
  • the lowest unoccupied molecular orbital (LUMO) level of materials with high electron injection properties has a small difference from the value of the work function of the material used for the cathode (specifically, it is 0.5 eV or less). is preferred.
  • the electron injection layer includes, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)pheno Alkali metals such as latolithium (abbreviation: LiPPP), lithium oxide (LiO x ), cesium carbonate, alkaline earth metals, or compounds thereof can be used.
  • the electron injection layer may have a laminated structure of two or more layers. Examples of the laminated structure include a structure in which lithium fluoride is used for the first layer and ytterbium is provided for the second layer.
  • the electron injection layer may have an electron-transporting material.
  • a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
  • the LUMO level of the organic compound having a lone pair of electrons is preferably -3.6 eV or more and -2.3 eV or less.
  • CV cyclic voltammetry
  • photoelectron spectroscopy optical absorption spectroscopy
  • inverse photoelectron spectroscopy etc. are used to determine the highest occupied molecular orbital (HOMO: Highest Occupied Molecular Orbital) level and LUMO level of an organic compound. can be estimated.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • the charge generation layer has at least a charge generation region as described above.
  • the charge generation region preferably contains an acceptor material, for example, preferably contains a hole transport material and an acceptor material applicable to the hole injection layer described above.
  • the charge generation layer preferably has a layer containing a material with high electron injection properties.
  • This layer can also be called an electron injection buffer layer.
  • the electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. Since the injection barrier between the charge generation region and the electron transport layer can be relaxed by providing the electron injection buffer layer, electrons generated in the charge generation region can be easily injected into the electron transport layer.
  • the electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and can be configured to contain, for example, an alkali metal compound or an alkaline earth metal compound.
  • the electron injection buffer layer preferably has an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen. Lithium (Li 2 O), etc.) is more preferred.
  • the above materials applicable to the electron injection layer can be preferably used.
  • the charge generation layer preferably has a layer containing a material with high electron transport properties. Such layers may also be referred to as electron relay layers.
  • the electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. If the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer.
  • the electron relay layer has a function of smoothly transferring electrons by preventing interaction between the charge generation region and the electron injection buffer layer (or electron transport layer).
  • a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviation: CuPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.
  • charge generation region the electron injection buffer layer, and the electron relay layer described above may not be clearly distinguishable depending on their cross-sectional shape or characteristics.
  • the charge generation layer may have a donor material instead of the acceptor material.
  • the charge-generating layer may have a layer containing an electron-transporting material and a donor material, which are applicable to the electron-injecting layer described above.
  • the light receiving device has a layer 765 between a pair of electrodes (lower electrode 761 and upper electrode 762).
  • Layer 765 has at least one active layer and may have other layers.
  • FIG. 9B is a modification of the layer 765 included in the light receiving device shown in FIG. 9A.
  • the light receiving device shown in FIG. 9B comprises a layer 766 over the bottom electrode 761, an active layer 767 over the layer 766, a layer 768 over the active layer 767, and a top electrode 762 over the layer 768. have.
  • the active layer 767 functions as a photoelectric conversion layer.
  • the layer 766 has one or both of a hole transport layer and an electron blocking layer.
  • Layer 768 also includes one or both of an electron-transporting layer and a hole-blocking layer.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used in the light-receiving device, and inorganic compounds may be included.
  • the layers constituting the light-receiving device can be formed by methods such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, and a coating method.
  • the active layer of the light receiving device contains a semiconductor.
  • the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds.
  • an organic semiconductor is used as the semiconductor included in the active layer.
  • the light-emitting layer and the active layer can be formed by the same method (for example, a vacuum deposition method), and a manufacturing apparatus can be shared, which is preferable.
  • Electron-accepting organic semiconductor materials such as fullerenes (eg, C60 fullerene, C70 fullerene, etc.) and fullerene derivatives can be used as n-type semiconductor materials for the active layer.
  • fullerene derivatives include [6,6]-phenyl- C71 -butyric acid methyl ester (abbreviation: PC71BM), [6,6]-phenyl- C61 -butyric acid methyl ester (abbreviation: PC61BM), 1', 1′′,4′,4′′-tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2′′,3′′][5,6]fullerene- and C 60 (abbreviation: ICBA).
  • PC71BM [6,6]-phenyl- C71 -butyric acid methyl ester
  • PC61BM [6,6]-phenyl- C61 -butyric acid methyl ester
  • n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: Me-PTCDI), and 2 ,2′-(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methan-1-yl-1-ylidene) Dimalononitrile (abbreviation: FT2TDMN) can be mentioned.
  • Me-PTCDI N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide
  • FT2TDMN 2 ,2′-(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methan-1-yl-1-ylid
  • Materials for the n-type semiconductor include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, Oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinones derivatives and the like.
  • Materials for the p-type semiconductor of the active layer include copper (II) phthalocyanine (abbreviation: CuPc), tetraphenyl dibenzoperiflanthene (abbreviation: DBP), zinc phthalocyanine (abbreviation: ZnPc), and tin (II) phthalocyanine (abbreviation: ZnPc). : SnPc), quinacridone, and electron-donating organic semiconductor materials such as rubrene.
  • CuPc copper
  • DBP tetraphenyl dibenzoperiflanthene
  • ZnPc zinc phthalocyanine
  • ZnPc tin (II) phthalocyanine
  • SnPc quinacridone
  • electron-donating organic semiconductor materials such as rubrene.
  • Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton.
  • materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.
  • the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
  • the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
  • a spherical fullerene as the electron-accepting organic semiconductor material, and use an organic semiconductor material with a shape close to a plane as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
  • poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2, which functions as a donor, is added to the active layer.
  • a polymer compound such as 1,3-diyl]] polymer (abbreviation: PBDB-T) or a PBDB-T derivative can be used.
  • PBDB-T 1,3-diyl]
  • PBDB-T 1,3-diyl]
  • PBDB-T derivative a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.
  • the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
  • the active layer may be formed by laminating an n-type semiconductor and a p-type semiconductor.
  • three or more kinds of materials may be mixed in the active layer.
  • a third material may be mixed in addition to the n-type semiconductor material and the p-type semiconductor material.
  • the third material may be a low-molecular compound or a high-molecular compound.
  • the light-receiving device further includes, as layers other than the active layer, a layer containing a highly hole-transporting substance, a highly electron-transporting substance, a bipolar substance (substances having high electron-transporting and hole-transporting properties), or the like. may have.
  • the layer is not limited to the above, and may further include a layer containing a highly hole-injecting substance, a hole-blocking material, a highly electron-injecting material, an electron-blocking material, or the like.
  • materials that can be used in the above-described light-emitting device can be used.
  • polymer compounds such as poly(3,4-ethylenedioxythiophene)/polystyrene sulfonic acid (abbreviation: PEDOT/PSS), molybdenum oxide, and copper iodide Inorganic compounds such as (CuI) can be used.
  • Inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as the electron-transporting material or the hole-blocking material.
  • the light receiving device may have, for example, a mixed film of PEIE and ZnO.
  • Display device having photodetection function In the display device of one embodiment of the present invention, light-emitting devices are arranged in matrix in the display portion, and an image can be displayed on the display portion. Further, light receiving devices are arranged in a matrix in the display section, and the display section has one or both of an imaging function and a sensing function in addition to an image display function.
  • the display part can be used for an image sensor or a touch sensor. That is, by detecting light on the display portion, an image can be captured, or proximity or contact of an object (a finger, hand, pen, or the like) can be detected.
  • the display device of one embodiment of the present invention can use a light-emitting device as a light source of a sensor.
  • the light-receiving device can detect the reflected light (or scattered light).
  • imaging or touch detection is possible.
  • a display device of one embodiment of the present invention includes a light-emitting device and a light-receiving device in a pixel.
  • a display device of one embodiment of the present invention uses an organic EL device as a light-emitting device and an organic photodiode as a light-receiving device.
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • a display device having a light-emitting device and a light-receiving device in a pixel, since the pixel has a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, not only can an image be displayed by all the sub-pixels of the display device, but also some sub-pixels can emit light as a light source and the remaining sub-pixels can be used to display an image.
  • the display device can capture an image using the light receiving device.
  • the display device of this embodiment can be used as a scanner.
  • an image sensor can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), or faces.
  • an image sensor can be used to capture an image around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of the user of the wearable device. Therefore, the wearable device can have a function of detecting any one or more selected from the user's blink, black eye movement, and eyelid movement.
  • the light receiving device can be used as a touch sensor (also referred to as a direct touch sensor) or a near touch sensor (also referred to as a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).
  • a touch sensor also referred to as a direct touch sensor
  • a near touch sensor also referred to as a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor.
  • the touch sensor or near-touch sensor can detect the proximity or contact of an object (finger, hand, pen, etc.).
  • a touch sensor can detect an object by bringing the display device into direct contact with the object.
  • the near-touch sensor can detect the object even if the object does not touch the display device.
  • the display device can detect the object when the distance between the display device and the object is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less.
  • the display device can be operated without direct contact with the object, in other words, the display device can be operated without contact.
  • the risk of staining or scratching the display device can be reduced, or the object can be displayed without directly touching the stain (for example, dust or virus) attached to the display device. It becomes possible to operate the device.
  • the display device of one embodiment of the present invention can have a variable refresh rate.
  • the power consumption can be reduced by adjusting the refresh rate (for example, in the range of 1 Hz to 240 Hz) according to the content displayed on the display device.
  • the drive frequency of the touch sensor or the near-touch sensor may be changed according to the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the driving frequency of the touch sensor or the near-touch sensor can be higher than 120 Hz (typically 240 Hz). With this structure, low power consumption can be achieved and the response speed of the touch sensor or the near touch sensor can be increased.
  • the display device 100 shown in FIGS. 9C to 9E has a layer 353 having a light receiving device, a functional layer 355, and a layer 357 having a light emitting device between a substrate 351 and a substrate 359.
  • FIG. 9A A layer 353 having a light receiving device, a functional layer 355, and a layer 357 having a light emitting device between a substrate 351 and a substrate 359.
  • the functional layer 355 has a circuit for driving the light receiving device and a circuit for driving the light emitting device.
  • One or more of switches, transistors, capacitors, resistors, wirings, terminals, and the like can be provided in the functional layer 355 . Note that in the case of driving the light-emitting device and the light-receiving device by a passive matrix method, a structure in which the switch and the transistor are not provided may be employed.
  • a finger 352 in contact with the display device 100 reflects light emitted by a light emitting device in a layer 357 having a light emitting device, so that a light receiving device in a layer 353 having a light receiving device reflects the light. Detect light. Thereby, it is possible to detect that the finger 352 touches the display device 100 .
  • FIGS. 9D and 9E it may have a function of detecting or imaging an object that is close to (not in contact with) the display device.
  • FIG. 9D shows an example of detecting a finger of a person
  • FIG. 9E shows an example of detecting information around, on the surface of, or inside the human eye (number of blinks, eye movement, eyelid movement, etc.).
  • 15A, 15E, 16 and 17 show side by side a cross-sectional view taken along the dashed line X1-X2 shown in FIG. 1A and a cross-sectional view taken along the dashed line Y1-Y2.
  • 15B to 15D show enlarged views of the edge of the insulating layer 127 and its vicinity.
  • the thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are formed by sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD). ) method, ALD method, or the like.
  • CVD methods include a plasma enhanced CVD (PECVD) method, a thermal CVD method, and the like. Also, one of the thermal CVD methods is the metal organic CVD (MOCVD) method.
  • the thin films (insulating film, semiconductor film, conductive film, etc.) that make up the display device can be applied by spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, and roll coating. , curtain coating, or knife coating.
  • vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices.
  • vapor deposition methods include physical vapor deposition (PVD) such as sputtering, ion plating, ion beam vapor deposition, molecular beam vapor deposition, and vacuum vapor deposition, and chemical vapor deposition (CVD).
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • the functional layers included in the EL layer, vapor deposition ( vacuum deposition method, etc.), coating method (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, It can be formed by a method such as a flexographic (letterpress printing) method, a gravure method, or a microcontact method.
  • the thin film when processing the thin film that constitutes the display device, a photolithography method or the like can be used.
  • the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like.
  • an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.
  • a photolithography method there are typically the following two methods.
  • One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching or the like, and removing the resist mask.
  • the other is a method of forming a thin film having photosensitivity and then exposing and developing the thin film to process the thin film into a desired shape.
  • the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these.
  • ultraviolet light also referred to as ultraviolet light
  • KrF laser light ArF laser light, or the like
  • extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays may be used.
  • An electron beam can also be used instead of the light used for exposure. The use of extreme ultraviolet light, X-rays, or electron beams is preferable because extremely fine processing is possible.
  • a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
  • a dry etching method, a wet etching method, a sandblasting method, or the like can be used to etch the thin film.
  • an insulating layer 255a, an insulating layer 255b, and an insulating layer 255c are formed in this order over the layer 101 including the transistor.
  • the pixel electrodes 111R, 111G, and 111B and the conductive layer 123 are formed over the insulating layer 255c.
  • a sputtering method or a vacuum deposition method can be used to form the conductive film that serves as the pixel electrode.
  • the pixel electrodes 111R, 111G, 111B and the conductive layer 123 may have a laminated structure as shown in FIGS. 4A to 4C, for example. Further, recesses are formed on the surface of the insulating layer 255c that does not overlap with the pixel electrodes 111R, 111G, and 111B and the conductive layer 123 in some cases.
  • the surface to be treated can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface to be treated can be increased.
  • adhesion between the pixel electrode and a film (here, the film 113b) formed in a later step can be improved, and film peeling can be suppressed.
  • the hydrophobic treatment may not be performed.
  • Hydrophobization treatment can be performed, for example, by modifying the pixel electrode with fluorine.
  • Fluorine modification can be performed, for example, by treatment with a fluorine-containing gas, heat treatment, plasma treatment in a fluorine-containing gas atmosphere, or the like.
  • the gas containing fluorine for example, fluorine gas can be used, and for example, fluorocarbon gas can be used.
  • fluorocarbon gas lower fluorocarbon gases such as carbon tetrafluoride (CF 4 ) gas, C 4 F 6 gas, C 2 F 6 gas, C 4 F 8 gas, and C 5 F 8 gas can be used.
  • As the gas containing fluorine for example, SF6 gas, NF3 gas, CHF3 gas, etc. can be used.
  • helium gas, argon gas, hydrogen gas, or the like can be added to these gases as appropriate.
  • the surface of the pixel electrode is subjected to plasma treatment in a gas atmosphere containing a group 18 element such as argon, and then treated with a silylating agent to make the surface of the pixel electrode hydrophobic. be able to.
  • a silylating agent hexamethyldisilazane (HMDS), trimethylsilylimidazole (TMSI), or the like can be used.
  • the surface of the pixel electrode is also subjected to plasma treatment in a gas atmosphere containing a Group 18 element such as argon, and then to treatment using a silane coupling agent to make the surface of the pixel electrode hydrophobic. can do.
  • the surface of the pixel electrode By subjecting the surface of the pixel electrode to plasma treatment in a gas atmosphere containing a group 18 element such as argon, the surface of the pixel electrode can be damaged. This makes it easier for the methyl group contained in the silylating agent such as HMDS to bond to the surface of the pixel electrode. In addition, silane coupling by the silane coupling agent is likely to occur. As described above, the surface of the pixel electrode is subjected to plasma treatment in a gas atmosphere containing a Group 18 element such as argon, and then to treatment using a silylating agent or a silane coupling agent. The surface of the electrodes can be made hydrophobic.
  • the treatment using a silylating agent, silane coupling agent, or the like can be performed by applying the silylating agent, silane coupling agent, or the like, for example, using a spin coating method, a dipping method, or the like.
  • a vapor phase method is used to form a film containing a silylating agent or a film containing a silane coupling agent on a pixel electrode or the like.
  • a material containing a silylating agent or a material containing a silane coupling agent is vaporized, so that the atmosphere contains the silylating agent, the silane coupling agent, or the like.
  • a substrate on which pixel electrodes and the like are formed is placed in the atmosphere.
  • a film containing a silylating agent, a silane coupling agent, or the like can be formed on the pixel electrode, and the surface of the pixel electrode can be made hydrophobic.
  • Film 113b which later becomes the layer 113B, is formed on the pixel electrode (FIG. 10B).
  • Film 113b (later layer 113B) includes a luminescent material that emits blue light.
  • the film 113b is not formed on the conductive layer 123 in the cross-sectional view along the dashed-dotted line Y1-Y2.
  • the film 113b can be formed only in desired regions.
  • Employing a film formation process using an area mask and a processing process using a resist mask makes it possible to manufacture a light-emitting device in a relatively simple process.
  • the heat resistance temperature of the compounds contained in the film 113b is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower. This can improve the reliability of the light emitting device.
  • the upper limit of the temperature applied in the manufacturing process of the display device can be increased. Therefore, it is possible to widen the range of selection of materials and formation methods used for the display device, and it is possible to improve the manufacturing yield and reliability.
  • the film 113b can be formed, for example, by a vapor deposition method, specifically a vacuum vapor deposition method.
  • the film 113b may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • a sacrificial film 118b that will later become the sacrificial layer 118B and a sacrificial film 119b that will later become the sacrificial layer 119B are sequentially formed on the film 113b and the conductive layer 123 (FIG. 10C).
  • the sacrificial film may be referred to as a mask film in this specification and the like.
  • the sacrificial film may have a single-layer structure or a laminated structure of three or more layers.
  • the damage to the film 113b during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.
  • a film having high resistance to the processing conditions of the film 113b specifically, a film having a high etching selectivity with respect to the film 113b is used.
  • a film having a high etching selectivity with respect to the sacrificial film 118b is used for the sacrificial film 119b.
  • the sacrificial film 118b and the sacrificial film 119b are formed at a temperature lower than the heat-resistant temperature of the film 113b.
  • the substrate temperature for forming the sacrificial film 118b and the sacrificial film 119b is typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and still more preferably 100° C. or lower. is below 80°C.
  • heat resistant temperature indicators include glass transition point, softening point, melting point, thermal decomposition temperature, and 5% weight loss temperature.
  • the heat resistant temperature of the films 113b, 113g, and 113r can be any temperature that is an index of these heat resistant temperatures, preferably the lowest temperature among them.
  • the substrate temperature when forming the sacrificial film can be 100° C. or higher, 120° C. or higher, or 140° C. or higher.
  • the inorganic insulating film can be made denser and have higher barrier properties as the film formation temperature is higher. Therefore, by forming the sacrificial film at such a temperature, the damage received by the film 113b can be further reduced, and the reliability of the light emitting device can be improved.
  • a film that can be removed by a wet etching method is preferably used for the sacrificial film 118b and the sacrificial film 119b.
  • damage to the film 113b during processing of the sacrificial films 118b and 119b can be reduced as compared with the case of using the dry etching method.
  • the sacrificial film 118b and the sacrificial film 119b for example, sputtering, ALD (including thermal ALD and PEALD), CVD, and vacuum deposition can be used. Alternatively, it may be formed using the wet film forming method described above.
  • the sacrificial film 118b formed on and in contact with the film 113b is preferably formed using a formation method that causes less damage to the film 113b than the sacrificial film 119b.
  • a formation method that causes less damage to the film 113b than the sacrificial film 119b.
  • sacrificial film 118b and the sacrificial film 119b for example, one or more of metal films, alloy films, metal oxide films, semiconductor films, organic insulating films, and inorganic insulating films can be used.
  • the sacrificial film 118b and the sacrificial film 119b are each made of gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum.
  • a metallic material or an alloy material containing the metallic material can be used.
  • it is preferable to use a low melting point material such as aluminum or silver.
  • a metal material capable of blocking ultraviolet rays for one or both of the sacrificial film 118b and the sacrificial film 119b, irradiation of the film 113b with ultraviolet rays can be suppressed and deterioration of the film 113b can be suppressed, which is preferable. .
  • a metal film or an alloy film for one or both of the sacrificial film 118b and the sacrificial film 119b, because it is possible to suppress the film 113b from being damaged by plasma and suppress the deterioration of the film 113b. Specifically, damage caused by plasma to the film 113b can be suppressed in a step using a dry etching method, an ashing step, or the like. In particular, it is preferable to use a metal film such as a tungsten film or an alloy film as the sacrificial film 119b.
  • the sacrificial film 118b and the sacrificial film 119b include In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), and indium oxide, respectively.
  • element M is aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten , cobalt, or magnesium
  • M is preferably one or more selected from gallium, aluminum, and yttrium.
  • a film containing a material having a light shielding property against light can be used.
  • a film that reflects ultraviolet rays or a film that absorbs ultraviolet rays can be used.
  • the light shielding material various materials such as metals, insulators, semiconductors, and semi-metals that are light shielding against ultraviolet light can be used. Since the film is removed in the process, it is preferable that the film be processed by etching, and it is particularly preferable that the film has good processability.
  • semiconductor materials such as silicon or germanium can be used as materials that are highly compatible with semiconductor manufacturing processes.
  • oxides or nitrides of the above semiconductor materials can be used.
  • non-metallic materials such as carbon or compounds thereof can be used.
  • metals such as titanium, tantalum, tungsten, chromium, aluminum, or alloys containing one or more of these.
  • oxides containing the above metals such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.
  • the sacrificial film By using a film containing a material that blocks ultraviolet light as the sacrificial film, it is possible to suppress the irradiation of the EL layer with ultraviolet light during the exposure process. By preventing the EL layer from being damaged by ultraviolet rays, the reliability of the light-emitting device can be improved.
  • a film containing a material having a light shielding property with respect to ultraviolet rays has the same effect even if it is used as a material of the insulating film 125A, which will be described later.
  • Various inorganic insulating films that can be used for the protective layer 131 can be used as the sacrificial film 118b and the sacrificial film 119b.
  • an oxide insulating film is preferable because it has higher adhesion to the film 113b than a nitride insulating film.
  • inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial films 118b and 119b, respectively.
  • an aluminum oxide film can be formed using the ALD method. Use of the ALD method is preferable because damage to the base (especially the EL layer) can be reduced.
  • an inorganic insulating film eg, aluminum oxide film
  • an inorganic film eg, In—Ga—Zn oxide film
  • material film, silicon film, or tungsten film can be used.
  • the same inorganic insulating film can be used for both the sacrificial film 118b and the insulating layer 125 to be formed later.
  • both the sacrificial film 118b and the insulating layer 125 can be formed using an aluminum oxide film using an ALD method.
  • the same film formation conditions may be applied to the sacrificial film 118b and the insulating layer 125, or different film formation conditions may be applied.
  • the sacrificial film 118b can be an insulating layer with high barrier properties against at least one of water and oxygen.
  • the sacrificial film 118b is a layer from which most or all of which will be removed in a later step, it is preferable that the sacrificial film 118b be easily processed. Therefore, the sacrificial film 118b is preferably formed under the condition that the substrate temperature is lower than that of the insulating layer 125 during film formation.
  • An organic material may be used for one or both of the sacrificial film 118b and the sacrificial film 119b.
  • a material that can be dissolved in a chemically stable solvent may be used for at least the film positioned at the top of the film 113b.
  • materials that dissolve in water or alcohol can be preferably used.
  • it is preferable to dissolve the material in a solvent such as water or alcohol apply the material by a wet film forming method, and then perform heat treatment to evaporate the solvent. At this time, heat treatment is preferably performed in a reduced-pressure atmosphere because the solvent can be removed at a low temperature in a short time, so that thermal damage to the film 113b can be reduced.
  • the sacrificial film 118b and the sacrificial film 119b are each made of polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or perfluoropolymer.
  • PVA polyvinyl alcohol
  • polyvinyl butyral polyvinylpyrrolidone
  • polyethylene glycol polyglycerin
  • pullulan polyethylene glycol
  • polyglycerin polyglycerin
  • pullulan polyethylene glycol
  • water-soluble cellulose polyglycerin
  • pullulan polyethylene glycol
  • pullulan polyglycerin
  • pullulan polyethylene glycol
  • water-soluble cellulose polyglycerin
  • pullulan polyethylene glycol
  • pullulan polyglycerin
  • pullulan polyethylene glycol
  • polyglycerin polyglycerin
  • pullulan
  • sacrificial film 118b an organic film (for example, PVA film) formed using either the vapor deposition method or the wet film forming method is used, and as the sacrificial film 119b, an inorganic film (such as a PVA film) formed using a sputtering method is used.
  • a silicon nitride film can be used.
  • part of the sacrificial film may remain as a sacrificial layer in the display device of one embodiment of the present invention.
  • a resist mask 190B is formed on the sacrificial film 119b (FIG. 10C).
  • the resist mask 190B can be formed by applying a photosensitive resin (photoresist) and performing exposure and development.
  • the resist mask 190B may be produced using either a positive resist material or a negative resist material.
  • the resist mask 190B is provided so as to cover the pixel electrode 111B. That is, when viewed from above, the end of the resist mask 190B is located outside the end of the pixel electrode 111B. Further, the resist mask 190B is preferably provided also at a position overlapping with the conductive layer 123 . Accordingly, damage to the conductive layer 123 during the manufacturing process of the display device can be suppressed. Note that the resist mask 190B is not necessarily provided over the conductive layer 123 .
  • the resist mask 190B can be provided so as to cover from the end of the film 113b to the end of the conductive layer 123 (the end on the film 113b side) as shown in the cross-sectional view along Y1-Y2 in FIG. 10C. preferable.
  • the ends of the sacrificial layers 118B and 119B overlap with the ends of the film 113b.
  • the insulating layer 255c remains intact even after the film 113b is processed. Exposure can be suppressed (see the cross-sectional view between Y1 and Y2 in FIG. 11C). This can prevent the insulating layers 255a to 255c and part of the insulating layer included in the layer 101 including the transistor from being removed by etching or the like and exposing the conductive layer included in the layer 101 including the transistor. . Therefore, unintentional electrical connection of the conductive layer to another conductive layer can be suppressed. For example, short-circuiting between the conductive layer and the common electrode 115 can be suppressed.
  • part of the sacrificial film 119b is removed to form a sacrificial layer 119B (FIG. 11A).
  • the sacrificial layer 119B remains on the pixel electrode 111B and the conductive layer 123 .
  • the resist mask 190B is removed.
  • part of the sacrificial film 118b is removed to form a sacrificial layer 118B (FIG. 11B).
  • the sacrificial layer 119B and the sacrificial layer 118B are provided so as to cover the pixel electrode 111B. That is, when viewed from above, the ends of the sacrificial layers 119B and 118B are located outside the ends of the pixel electrode 111B.
  • the sacrificial film 118b and the sacrificial film 119b can be processed by wet etching or dry etching, respectively.
  • the sacrificial film 118b and the sacrificial film 119b are preferably processed by anisotropic etching.
  • a wet etching method By using the wet etching method, damage to the film 113b during processing of the sacrificial films 118b and 119b can be reduced compared to the case of using the dry etching method.
  • a wet etching method for example, a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed solution containing two or more of these may be used. is preferred.
  • TMAH tetramethylammonium hydroxide
  • the selection of processing methods is wider than in the processing of the sacrificial film 118b. Specifically, even when a gas containing oxygen is used as an etching gas when processing the sacrificial film 119b, deterioration of the film 113b can be further suppressed.
  • a dry etching method for processing the sacrificial film 118b deterioration of the film 113b can be suppressed by not using an oxygen-containing gas as the etching gas.
  • a gas containing a noble gas such as CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , or He is used for etching. Gases are preferred.
  • the sacrificial film 118b is processed by a dry etching method using CHF 3 and He or CHF 3 and He and CH 4 .
  • a dry etching method using CHF 3 and He or CHF 3 and He and CH 4 .
  • the sacrificial film 119b can be processed by a wet etching method using diluted phosphoric acid.
  • it may be processed by a dry etching method using CH 4 and Ar.
  • the sacrificial film 119b can be processed by a wet etching method using diluted phosphoric acid.
  • the sacrificial film 119b is dry-etched using SF 6 , CF 4 and O 2 , or CF 4 and Cl 2 and O 2 . can be processed.
  • the resist mask 190B can be removed by, for example, ashing using oxygen plasma.
  • an oxygen gas and a noble gas such as CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O, BCl 3 , or He may be used.
  • the resist mask 190B may be removed by wet etching. At this time, since the sacrificial film 118b is positioned on the outermost surface and the film 113b is not exposed, damage to the film 113b can be suppressed in the step of removing the resist mask 190B. In addition, it is possible to widen the range of selection of methods for removing the resist mask 190B.
  • the film 113b is processed to form a layer 113B.
  • a portion of film 113b is removed to form layer 113B (FIG. 11C).
  • a layered structure of the layer 113B, the sacrificial layer 118B, and the sacrificial layer 119B remains on the pixel electrode 111B. Also, the pixel electrode 111R and the pixel electrode 111G are exposed.
  • the surface of the pixel electrode 111R and the surface of the pixel electrode 111G are exposed to an etching gas, an etching liquid, or the like.
  • the surface of the pixel electrode 111B is not exposed to etching gas, etching liquid, or the like.
  • the film 113b is preferably processed by anisotropic etching.
  • Anisotropic dry etching is particularly preferred.
  • wet etching may be used.
  • a recess may be formed in a region of the insulating layer 255c that does not overlap with the layer 113B by processing the film 113b.
  • FIG. 11C shows an example of processing the film 113b by dry etching.
  • the etching gas is turned into plasma in the dry etching apparatus. Therefore, the surface of the display device being manufactured is exposed to plasma.
  • a metal film or an alloy film for one or both of the sacrificial layer 118B and the sacrificial layer 119B it is possible to suppress plasma damage to the remaining portion of the film 113b (the portion to be the layer 113B). This is preferable because deterioration of the layer 113B can be suppressed.
  • a metal film such as a tungsten film or an alloy film as the sacrificial layer 119B.
  • a gas containing oxygen may be used as the etching gas.
  • the etching rate can be increased by including oxygen in the etching gas. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. Therefore, damage to the film 113b can be suppressed. Furthermore, problems such as adhesion of reaction products that occur during etching can be suppressed.
  • a gas containing one or more of these as the etching gas is preferable to use.
  • a gas containing one or more of these and oxygen is preferably used as an etching gas.
  • oxygen gas may be used as the etching gas.
  • a gas containing H 2 and Ar or a gas containing CF 4 and He can be used as the etching gas.
  • a gas containing CF 4 , He, and oxygen can be used as the etching gas.
  • a gas containing H 2 and Ar and a gas containing oxygen can be used as the etching gas.
  • a dry etching apparatus having a high-density plasma source can be used as the dry etching apparatus.
  • a dry etching apparatus having a high-density plasma source can be, for example, an inductively coupled plasma (ICP) etching apparatus.
  • a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes can be used.
  • a capacitively coupled plasma etching apparatus having parallel plate electrodes may be configured to apply a high frequency voltage to one electrode of the parallel plate electrodes. Alternatively, a plurality of different high-frequency voltages may be applied to one of the parallel plate electrodes. Alternatively, a high-frequency voltage having the same frequency may be applied to each of the parallel plate electrodes. Alternatively, high-frequency voltages having different frequencies may be applied to parallel plate electrodes.
  • the subsequent steps can be performed without exposing the pixel electrode 111B. If the end of the pixel electrode 111B is exposed, corrosion may occur during an etching process or the like. A product generated by the corrosion of the pixel electrode 111B may be unstable. For example, in the case of wet etching, the product may dissolve in a solution, and in the case of dry etching, there is a concern that it may scatter in the atmosphere. Dissolution of the product into the solution or scattering into the atmosphere causes the product to adhere to, for example, the surface to be processed and the side surface of the layer 113B, adversely affecting the characteristics of the light-emitting device.
  • the adhesion between the layers in contact with each other may be lowered, and the layer 113B or the pixel electrode 111B may be easily peeled off.
  • the layer 113B to cover the top and side surfaces of the pixel electrode 111B, for example, the yield and characteristics of the light-emitting device can be improved.
  • the edge of the layer 113B may be damaged by plasma or the like during processing of the film 113b or in a later process. Since the edge of the layer 113B and the vicinity thereof are not used for light emission, even if damage is applied thereto, the characteristics of the light emitting device are unlikely to be adversely affected. On the other hand, since the light emitting region of the layer 113B is covered with the sacrificial layer, it is not exposed to the plasma and the damage caused by the plasma is sufficiently reduced.
  • the sacrificial layer is preferably provided so as to cover not only the upper surface of the flat portion of the layer 113B overlapping the upper surface of the pixel electrode 111B, but also the inclined portion and the upper surface of the flat portion positioned outside the upper surface of the pixel electrode 111B. . In this manner, since the portion of the layer 113B that is less damaged during the manufacturing process is used as the light-emitting region, a long-life light-emitting device with high light-emitting efficiency can be realized.
  • a layered structure of the sacrificial layer 118B and the sacrificial layer 119B remains on the conductive layer 123. As shown in FIG.
  • the sacrificial layers 118B and 119B are provided so as to cover the end portions of the layer 113B and the conductive layer 123, and the top surface of the insulating layer 255c. not exposed. Therefore, it is possible to prevent the insulating layers 255a to 255c and part of the insulating layer included in the layer 101 including the transistor from being removed by etching or the like and exposing the conductive layer included in the layer 101 including the transistor. Therefore, unintentional electrical connection of the conductive layer to another conductive layer can be suppressed.
  • the resist mask 190B is formed over the sacrificial film 119b, and the sacrificial layer 119B is formed by removing part of the sacrificial film 119b using the resist mask 190B.
  • the layer 113B is formed by removing part of the film 113b using the sacrificial layer 119B as a hard mask. Therefore, it can be said that the layer 113B is formed by processing the film 113b using the photolithography method. Note that part of the film 113b may be removed using the resist mask 190B. After that, the resist mask 190B may be removed.
  • the surface state of the pixel electrode may change to be hydrophilic.
  • the adhesion between the pixel electrode and a film (here, the film 113g) formed in a later step can be enhanced, and film peeling can be suppressed. Note that the hydrophobic treatment may not be performed.
  • Film 113g that will later become the layer 113G is formed on the pixel electrodes 111R and 111G and on the sacrificial layer 119B (FIG. 12A).
  • Film 113g (later layer 113G) contains a luminescent material that emits green light. That is, in this embodiment mode, a second example of forming an island-shaped EL layer included in a light-emitting device that emits green light is shown. Note that the present invention is not limited to this, and secondly, an island-shaped EL layer included in a light-emitting device that emits red light may be formed.
  • the film 113g can be formed by methods similar to those that can be used to form the film 113b.
  • a sacrificial film 118g that will later become the sacrificial layer 118G and a sacrificial film 119g that will later become the sacrificial layer 119G are sequentially formed on the film 113g, and then a resist mask 190G is formed (FIG. 12A).
  • the materials and formation methods of the sacrificial films 118g and 119g are the same as the conditions applicable to the sacrificial films 118b and 119b.
  • the material and formation method of the resist mask 190G are the same as the conditions applicable to the resist mask 190B.
  • the resist mask 190G is provided so as to cover the pixel electrode 111G. That is, when viewed from above, the end of the resist mask 190G is positioned outside the end of the pixel electrode 111G.
  • a resist mask 190G part of the sacrificial film 119g is removed to form a sacrificial layer 119G (FIG. 12B).
  • the sacrificial layer 119G remains on the pixel electrode 111G.
  • the resist mask 190G is removed.
  • a portion of the sacrificial film 118g is removed to form a sacrificial layer 118G (FIG. 12C).
  • the sacrificial layer 119G and the sacrificial layer 118G are provided so as to cover the pixel electrode 111G. That is, when viewed from above, the end portions of the sacrificial layers 119G and 118G are located outside the end portions of the pixel electrode 111G.
  • the film 113g is processed to form a layer 113G.
  • a portion of film 113g is removed to form layer 113G (FIG. 13A).
  • the surface of the pixel electrode 111R is exposed to an etching gas, an etching liquid, or the like.
  • the surface of the pixel electrode 111B and the surface of the pixel electrode 111G are not exposed to the etching gas, the etching liquid, or the like. That is, in the light-emitting device of the second color, the surface of the pixel electrode is exposed in one etching step, and in the light-emitting device of the third color, the surface of the pixel electrode is exposed in two etching steps. It will be done. Therefore, it is preferable to form the island-shaped EL layer first in a light-emitting device whose characteristics are more likely to be affected by the surface state of the pixel electrode. Thereby, the characteristics of the light emitting device of each color can be improved.
  • FIG. 13A shows an example of processing the film 113g by dry etching.
  • the surface of the display device being fabricated is exposed to plasma.
  • a metal film or an alloy film for one or both of the sacrificial layer 118G and the sacrificial layer 119G it is possible to suppress damage caused by plasma to the remaining portion of the film 113g (the layer 113G), thereby deteriorating the layer 113G. can be suppressed, which is preferable.
  • a laminated structure of the layer 113G, the sacrificial layer 118G, and the sacrificial layer 119G remains on the pixel electrode 111G. Also, the sacrificial layer 119B and the pixel electrode 111R are exposed.
  • the surface state of the pixel electrode may change to be hydrophilic.
  • adhesion between the pixel electrode and a film (here, the film 113r) formed in a later step can be enhanced, and film peeling can be suppressed.
  • the hydrophobic treatment may not be performed.
  • a film 113r that will later become the layer 113R is formed on the pixel electrode 111R and on the sacrificial layers 119G and 119B (FIG. 13B).
  • the film 113r (later layer 113R) contains a luminescent material that emits red light.
  • the film 113r can be formed by methods similar to those that can be used to form the film 113b.
  • a sacrificial film 118r that will later become the sacrificial layer 118R and a sacrificial film 119r that will later become the sacrificial layer 119R are sequentially formed on the film 113r, and then a resist mask 190R is formed (FIG. 13B).
  • the materials and formation methods of the sacrificial films 118r and 119r are the same as the conditions applicable to the sacrificial films 118b and 119b.
  • the material and formation method of the resist mask 190R are the same as the conditions applicable to the resist mask 190B.
  • the resist mask 190R is provided so as to cover the pixel electrode 111R. That is, when viewed from above, the end of the resist mask 190R is located outside the end of the pixel electrode 111R.
  • part of the sacrificial film 119r is removed to form the sacrificial layer 119R.
  • the sacrificial layer 119R remains on the pixel electrode 111R.
  • the resist mask 190R is removed.
  • part of the sacrificial film 118r is removed to form a sacrificial layer 118R.
  • the sacrificial layer 119R and the sacrificial layer 118R are provided so as to cover the pixel electrode 111R. That is, when viewed from above, the ends of the sacrificial layers 119R and 118R are located outside the ends of the pixel electrode 111R.
  • the film 113r is processed to form the layer 113R.
  • the film 113r is processed to form the layer 113R.
  • a portion of film 113r is removed to form layer 113R (FIG. 13C).
  • FIG. 13C shows an example of processing the film 113r by dry etching.
  • the surface of the display device being fabricated is exposed to plasma.
  • the layers 113B and 113G are formed by plasma. This is preferable because damage can be suppressed and deterioration of the layers 113B and 113G can be suppressed.
  • a metal film or an alloy film for one or both of the sacrificial layer 118R and the sacrificial layer 119R, it is possible to suppress damage caused by plasma to the remaining portion of the film 113r (the layer 113R), thereby degrading the layer 113R. can be suppressed, which is preferable.
  • a metal film such as a tungsten film or an alloy film as the sacrificial layer 119R.
  • a layered structure of the layer 113R, the sacrificial layer 118R, and the sacrificial layer 119R remains on the pixel electrode 111R. Also, the sacrificial layers 119G and 119B are exposed.
  • the side surfaces of the layers 113B, 113G, and 113R are preferably perpendicular or substantially perpendicular to the formation surface.
  • the angle formed by the surface to be formed and these side surfaces be 60 degrees or more and 90 degrees or less.
  • the distance between two adjacent layers 113B, 113G, and 113R formed by photolithography is 8 ⁇ m or less, 5 ⁇ m or less, 3 ⁇ m or less, 2 ⁇ m or less, or 1 ⁇ m or less.
  • the distance can be defined by, for example, the distance between two adjacent opposing ends of the layers 113B, 113G, and 113R.
  • the layers 113G and 113R that have a light-emitting material that emits light with a longer wavelength than blue light are formed in an island shape.
  • the light emitting device of each color can emit light with high brightness.
  • the life of the light-emitting device for each color can be lengthened, and the reliability of the display device can be improved.
  • the present invention is not limited to this, and the order of forming the layers 113B, 113G, and 113R may be determined as appropriate.
  • the order may be layer 113B, layer 113R, and layer 113G, the order may be layer 113G, layer 113B, and layer 113R, the order may be layer 113G, layer 113R, and layer 113B, and the order may be layer 113R and layer 113G. , layer 113B, or layer 113R, layer 113B, and layer 113G.
  • sacrificial layers 119B, 119G, and 119R are preferably removed (FIG. 14A).
  • sacrificial layers 119B, 119G, and 119R are preferably removed at this stage.
  • a conductive material is used for the sacrificial layers 119B, 119G, and 119R
  • leakage current is generated by the remaining sacrificial layers 119B, 119G, and 119R, and It is possible to suppress the formation of capacitance and the like.
  • the case of removing the sacrificial layers 119B, 119G, and 119R will be described as an example, but the sacrificial layers 119B, 119G, and 119R may not be removed.
  • the sacrificial layers 119B, 119G, and 119R may not be removed.
  • the island-shaped EL layers are protected from ultraviolet rays by proceeding to the next step without removing them. possible and preferred.
  • the same method as the sacrificial layer processing process can be used.
  • damage to the layers 113B, 113G, and 113R can be reduced when removing the sacrificial layer compared to the case of using a dry etching method.
  • the presence of the sacrificial layers 119B, 119G, and 119R can suppress plasma damage to the EL layer. Therefore, in the steps up to the removal of the sacrificial layers 119B, 119G, and 119R, the film can be processed using the dry etching method. On the other hand, in the step of removing the sacrificial layers 119B, 119G, and 119R and in each step after the removal, the film that suppresses plasma damage to the EL layer is lost. It is preferable to process the film by a method that does not use .
  • the sacrificial layer may be removed by dissolving it in a solvent such as water or alcohol.
  • Alcohols include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), glycerin, and the like.
  • a drying process may be performed to remove water contained in the layers 113B, 113G, and 113R and water adsorbed to the surfaces of the layers 113B, 113G, and 113R.
  • heat treatment can be performed in an inert gas atmosphere such as a nitrogen atmosphere or in a reduced-pressure atmosphere.
  • the heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 120° C.
  • a reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.
  • an insulating film 125A that will later become the insulating layer 125 is formed so as to cover the pixel electrode, the layers 113B, 113G, 113R, the sacrificial layer 118B, the sacrificial layer 118G, and the sacrificial layer 118R (FIG. 14A).
  • impurities oxygen, moisture, or the like
  • It can be a panel.
  • an insulating film 127a is formed in contact with the upper surface of the insulating film 125A.
  • the upper surface of the insulating film 125A preferably has high adhesion to the resin composition (for example, a photosensitive resin composition containing acrylic resin) used for the insulating film 127a.
  • the resin composition for example, a photosensitive resin composition containing acrylic resin
  • a silylating agent such as hexamethyldisilazane (HMDS).
  • an insulating film 127a is formed on the insulating film 125A (FIG. 14B).
  • the insulating film 125A is provided between the layers 113B, 113G, and 113R and the insulating film 127a, impurities (oxygen, moisture, and the like) contained in the insulating film 127a during manufacturing. can be suppressed from entering the layers 113B, 113G, and 113R.
  • the insulating film 125A and the insulating film 127a are preferably formed by a formation method that causes little damage to the layers 113B, 113G, and 113R.
  • the insulating film 125A is formed in contact with the side surfaces of the layers 113B, 113G, and 113R, it is formed by a formation method that causes less damage to the layers 113B, 113G, and 113R than the insulating film 127a. It is preferably coated.
  • the insulating films 125A and 127a are formed at temperatures lower than the heat-resistant temperatures of the layers 113B, 113G, and 113R, respectively.
  • the insulating film 125A can have a low impurity concentration and a high barrier property against at least one of water and oxygen even if the film is thin by raising the substrate temperature when forming the insulating film 125A.
  • the substrate temperature when forming the insulating film 125A and the insulating film 127a is 60° C. or higher, 80° C. or higher, 100° C. or higher, or 120° C. or higher and 200° C. or lower, 180° C. or lower, 160° C. or lower, respectively. , 150° C. or lower, or 140° C. or lower.
  • the substrate temperature when forming the insulating film 125A and the insulating film 127a can be set to 100° C. or higher, 120° C. or higher, or 140° C. or higher, respectively.
  • the inorganic insulating film can be made denser and have higher barrier properties as the film formation temperature is higher. Therefore, by forming the insulating film 125A at such a temperature, the damage to the layers 113B, 113G, and 113R can be further reduced, and the reliability of the light emitting device can be improved.
  • the insulating film 125A is preferably formed using, for example, the ALD method.
  • the use of the ALD method is preferable because film formation damage can be reduced and a film with high coverage can be formed.
  • As the insulating film 125A for example, an aluminum oxide film is preferably formed using the ALD method.
  • the insulating film 125A may be formed using a sputtering method, a CVD method, or a PECVD method, which has a higher film formation rate than the ALD method. Accordingly, a highly reliable display device can be manufactured with high productivity.
  • the insulating film 127a is preferably formed using the wet film formation method described above.
  • the insulating film 127a is preferably formed, for example, by spin coating using a photosensitive resin, and more specifically, is preferably formed using a photosensitive resin composition containing an acrylic resin.
  • heat treatment is preferably performed after the insulating film 127a is formed.
  • the heat treatment is performed at a temperature lower than the heat-resistant temperatures of the layers 113B, 113G, and 113R.
  • the substrate temperature during the heat treatment is preferably 50° C. or higher and 200° C. or lower, more preferably 60° C. or higher and 150° C. or lower, and even more preferably 70° C. or higher and 120° C. or lower.
  • the solvent contained in the insulating film 127a can be removed.
  • a portion of the insulating film 127a is irradiated with visible light or ultraviolet rays to expose a portion of the insulating film 127a (FIG. 14C).
  • a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127a
  • a region where the insulating layer 127 is not formed in a later step is irradiated with visible light or ultraviolet rays using a mask 132 .
  • the insulating layer 127 is formed around the conductive layer 123 and a region sandwiched between any two of the pixel electrodes 111R, 111G, and 111B. Therefore, as shown in FIG.
  • a portion of the insulating film 127a overlapping with the pixel electrode 111R, a portion overlapping with the pixel electrode 111G, a portion overlapping with the pixel electrode 111B, and a portion overlapping with the conductive layer 123 are irradiated with light.
  • the width of the insulating layer 127 to be formed later can be controlled depending on the region exposed to light.
  • the insulating layer 127 is processed so as to have a portion overlapping with the upper surface of the pixel electrode (FIG. 15A).
  • the light used for exposure preferably contains i-line (wavelength: 365 nm). Moreover, the light used for exposure may include at least one of g-line (wavelength: 436 nm) and h-line (wavelength: 405 nm).
  • FIG. 14C shows an example in which a positive photosensitive resin is used for the insulating film 127a and visible light or ultraviolet light is irradiated to the region where the insulating layer 127 is not formed, but the present invention is limited to this. not a thing
  • a negative photosensitive resin may be used for the insulating film 127a.
  • the region where the insulating layer 127 is formed is irradiated with visible light or ultraviolet light.
  • insulating layer 127b is formed in a region sandwiched between any two of the pixel electrodes 111 R, 111 G, and 111 B and a region surrounding the conductive layer 123 .
  • an acrylic resin is used for the insulating film 127a
  • an alkaline solution is preferably used as the developer, and for example, a tetramethylammonium hydroxide (TMAH) aqueous solution can be used.
  • TMAH tetramethylammonium hydroxide
  • a step of removing residues (so-called scum) during development may be performed.
  • the residue can be removed by ashing using oxygen plasma.
  • a step of removing residues may be performed.
  • etching may be performed to adjust the height of the surface of the insulating layer 127b.
  • the insulating layer 127b may be processed, for example, by ashing using oxygen plasma.
  • the entire substrate may be exposed, and the insulating layer 127b may be irradiated with visible light or ultraviolet light.
  • the energy density of the exposure is preferably greater than 0 mJ/cm 2 and less than or equal to 800 mJ/cm 2 , more preferably greater than 0 mJ/cm 2 and less than or equal to 500 mJ/cm 2 .
  • Such exposure after development can improve the transparency of the insulating layer 127b in some cases.
  • the insulating layer 127b may be deformed into a tapered shape at a low temperature.
  • the island-shaped EL layer is irradiated with high-energy-density light such as ultraviolet light in a state where only the insulating film 125A and the sacrificial layer 118 are provided over the light-emitting region. can prevent Therefore, damage to the island-shaped EL layer can be reduced.
  • FIGS. 15B to 15D A method of etching the insulating layer 125 and the sacrificial layer 118 separately before and after post-baking will be described below with reference to the enlarged views shown in FIGS. 15B to 15D.
  • FIG. 15B shows an enlarged view of the edge of the layer 113G and the insulating layer 127b shown in FIG. 15A and the vicinity thereof. That is, FIG. 15B shows the insulating layer 127b formed by development.
  • etching is performed by a wet etching method to partially remove the insulating film 125A and partially remove the film thicknesses of the sacrificial layers 118B, 118G, and 118R. thin.
  • the insulating layer 125 is formed under the insulating layer 127b.
  • the surfaces of the sacrificial layers 118B, 118G, and 118R where the film thickness is thin are exposed.
  • etching treatment by a wet etching method using the insulating layer 127b as a mask may be referred to as first wet etching treatment.
  • An etchant used in the wet etching method is preferably an acidic solution, and may be appropriately selected according to the materials used for the insulating film 125A and the sacrificial layer 118.
  • an acidic solution preferably an acidic solution, and may be appropriately selected according to the materials used for the insulating film 125A and the sacrificial layer 118.
  • aluminum oxide is used for the insulating film 125A and the sacrificial layer 118, it is preferable to use a mixed acid chemical containing water, phosphoric acid, hydrofluoric acid, and nitric acid as the acidic solution.
  • the insulating layer 127b may easily dissolve in an alkaline solution.
  • the insulating layer 127b is not sufficiently hardened and may be easily dissolved in an alkaline solution.
  • an acidic solution for the first wet etching treatment elution of the insulating layer 127b can be prevented. Therefore, it is possible to prevent the elution of the insulating layer 127b from causing part of the insulating layer 127b to enter the light-emitting region, thereby preventing pixel defects in the display device.
  • the mixed acid-based chemical solution is preferably an aqueous solution whose concentration has been sufficiently reduced with water.
  • concentrations of phosphoric acid, hydrofluoric acid, and nitric acid contained in the mixed acid-based chemical solution are preferably 10% or less, more preferably 5% or less, and even more preferably 2% or less.
  • the etching selectivity with respect to the materials used for the insulating film 125A and the sacrificial layer 118 is improved, and other members are prevented from being etched. can be prevented.
  • the side surfaces of the insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 118B, 118G, and 118R can be relatively easily tapered. You may be able to
  • the etching process is stopped when the sacrificial layers 118B, 118G, and 118R are not completely removed and the film thickness is reduced.
  • the layers 113B, 113G, and 113R can be formed in subsequent processes. It can prevent damage.
  • the thickness of the sacrificial layers 118B, 118G, and 118R is reduced, but the present invention is not limited to this.
  • the first wet etching process may be stopped before the insulating film 125A is processed into the insulating layer 125 in some cases. Specifically, the first wet etching process may be stopped only by partially thinning the insulating film 125A.
  • the boundary between the insulating film 125A and the sacrificial layers 118B, 118G, and 118R becomes unclear, and the insulating layer 125 is formed. In some cases, it cannot be determined whether the sacrificial layers 118B, 118G, and 118R have been thinned.
  • FIG. 15C shows an example in which the shape of the insulating layer 127b does not change from that in FIG. 15B, but the present invention is not limited to this. As will be described later, the insulating layer 127b may be deformed. Further, as described above, when the insulating layer 127b after development is not exposed to light, the shape of the insulating layer 127b may easily change.
  • heat treatment also called post-baking
  • the insulating layer 127b can be transformed into the insulating layer 127 having tapered side surfaces.
  • the edge of the insulating layer 127b may sag to cover the edge of the insulating layer 125 .
  • the edge of the insulating layer 127b may contact thin regions of the sacrificial layers 118B, 118G, and 118R.
  • the heat treatment is performed at a temperature lower than the heat-resistant temperature of the EL layer.
  • the heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C.
  • the heating atmosphere may be an air atmosphere or an inert gas atmosphere. Moreover, the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.
  • the substrate temperature is preferably higher than that in the heat treatment (prebaking) after the formation of the insulating film 127a. Thereby, the corrosion resistance of the insulating layer 127 can be improved.
  • the sacrificial layers 118B, 118G, and 118R are not completely removed, and the sacrificial layers 118B, 118G, and 118R are left in a state where the film thickness is reduced. , the layers 113G, 113G, and 113R can be prevented from being damaged and degraded. Therefore, the reliability of the light emitting device can be enhanced.
  • etching is performed by a wet etching method to remove the sacrificial layers 118B, 118G, and 118R on the light emitting region.
  • etching treatment by a wet etching method using the insulating layer 127 as a mask may be referred to as second wet etching treatment.
  • an etchant used in the second wet etching process it is preferable to use an acidic solution as in the first wet etching process. good.
  • an acidic solution for example, when aluminum oxide is used for the insulating film 125A and the sacrificial layer 118, it is preferable to use a mixed acid chemical containing water, phosphoric acid, hydrofluoric acid, and nitric acid as the acidic solution. This can prevent elution of the insulating layer 127 as in the first wet etching process. Therefore, the elution of the insulating layer 127 can prevent part of the insulating layer 127 from intruding into the light-emitting region, thereby preventing pixel defects in the display device.
  • the mixed acid-based chemical liquid used in the second wet etching process is preferably an aqueous solution whose concentration has been sufficiently reduced with water, as in the first wet etching process.
  • concentrations of phosphoric acid, hydrofluoric acid, and nitric acid contained in the mixed acid-based chemical solution are preferably 10% or less, more preferably 5% or less, and even more preferably 2% or less. In this manner, by using the mixed acid-based chemical solution with a sufficiently reduced concentration, the second wet etching process can be performed with a sufficiently reduced etching rate.
  • the etching selectivity with respect to the materials used for the insulating film 125A and the sacrificial layer 118 is improved, and other members are prevented from being etched. can be prevented.
  • the second wet etching process it is preferable to sufficiently remove the sacrificial layers 118B, 118G, and 118R on the light emitting regions. As a result, residues of the sacrificial layers 118B, 118G, and 118R on the light-emitting regions are removed, pixel defects of the display device can be reduced, and display quality can be improved.
  • the second wet etching process at a sufficiently reduced etching rate as described above, even if the residues of the sacrificial layers 118B, 118G, and 118R are removed over a sufficient period of time, the layers 113B, 113G, and Excessive damage to layer 113R can be prevented.
  • the etchant penetrates below the insulating layer 127, and the sacrificial layers 118R, 118G, and 118B and the insulating layer 125 are formed on the sides. May be etched. As a result, part or all of the regions of the sacrificial layers 118R, 118G, 118B and the insulating layer 125 that overlap with the insulating layer 127 are removed.
  • FIG. 15E shows an example in which the sacrificial layers 118R, 118G, and 118B are removed and part of the insulating layer 125 remains between the insulating layer 127 and the insulating layer 255c.
  • the present invention is not limited to this, and the sacrificial layers 118R, 118G, and 118B and the insulating layer 125 may remain in various shapes, as described in the description of FIGS. 2A to 3F. Also, the shapes of the sacrificial layers 118R, 118G, 118B and the insulating layer 125 may vary within the substrate plane.
  • part of the insulating layer 127 containing an organic material is in contact with part of the island-shaped EL layer. become a structure. Since the interface between the insulating layer 127 and the island-shaped EL layer serves as an interface between organic materials, adhesion between the insulating layer 127 and the island-shaped EL layer can be improved. Note that since the insulating layer 127 is cured by the post-baking, even if the insulating layer 127 and the island-shaped EL layer are in contact with each other, impurities entering the island-shaped EL layer from the insulating layer 127 are reduced. With the configuration as described above, the display device 100 is less susceptible to film peeling, and the reliability of the light-emitting device can be improved. Moreover, the production yield of the light-emitting device can be increased.
  • an insulating layer 127 is formed over the sacrificial layer 118 and the insulating layer 125 .
  • one end of the insulating layer 127 is positioned outside one end of the insulating layer 125 and one adjacent end of the sacrificial layer 118 .
  • the other end of the insulating layer 127 is positioned outside one end of the insulating layer 125 and the other adjacent end of the sacrificial layer 118 .
  • the structure used can also suppress the occurrence of galvanic corrosion.
  • the pixel electrode 111 can have the laminated structure shown in FIG. 4A.
  • the laminated structure shown in FIG. 4A requires a smaller number of masks and fewer manufacturing steps than the laminated structure shown in FIG. 4B, so productivity of the display device can be improved.
  • the mixed acid-based chemical solution whose concentration is sufficiently reduced has a high etching selectivity with respect to the materials used for the insulating film 125A and the sacrificial layer 118. 111d can be prevented from being etched.
  • damage to the layers 113R, 113G, and 113B can be reduced to manufacture a display device.
  • the present invention is not limited to this.
  • the damage applied to the layers 113R, 113G, and 113B can be sufficiently reduced, the upper surfaces of the layers 113R, 113G, and 113B may be exposed by one wet etching treatment, and then post-baking may be performed. good.
  • the etching area of the insulating film 125A in the connecting portion 140 is much larger than the etching area of the insulating film 125A in the display portion. Therefore, in the connecting portion 140, the etchant supply is rate-determined, and the etching rate may be lower than that in the display portion. If there is a difference in etching rate between the display portion and the connection portion 140 in this way, there is a problem that the insulating film 125A cannot be stably processed. For example, if the etching time is set according to the etching rate of the connecting portion 140, the insulating film 125A in the display portion may be excessively etched. Moreover, if the etching time is set according to the etching rate in the display portion, the insulating film 125A in the connection portion 140 may not be sufficiently etched and remain.
  • the exposure and development of the insulating film 127a may be performed separately for the connection portion 140 and the display portion.
  • the etching conditions (etching time, etc.) for the insulating film 125A can be independently controlled for the connection portion 140 and the display portion. Insufficient etching of the insulating film 125A at 140 can be suppressed.
  • connection portion 140 is exposed to light (FIG. 16A). Specifically, a region of the insulating film 127a overlapping with the conductive layer 123 is irradiated with visible light or ultraviolet rays using the mask 132a, so that part of the insulating film 127a is exposed to light.
  • the insulating film 127a is formed in the entire display portion and the region surrounding the conductive layer 123 (FIG. 16B).
  • the development method is not particularly limited, and a dip method, spin method, paddle method, vibration method, etc. can be used.
  • a method of constantly supplying new liquid it is preferable to apply a method (also referred to as a step-paddle method) in which liquid supply and holding (development) are repeated.
  • the step-paddle method is preferable because it can save liquid consumption and stabilize the etching rate as compared with the method of constantly supplying new liquid.
  • an etching process is performed using the insulating film 127a as a mask to partially remove the insulating film 125A in the connecting portion 140 and reduce the film thickness of a portion of the sacrificial layer 118B.
  • the surface of the portion where the film thickness of the sacrificial layer 118B is thin is exposed (FIG. 16B).
  • the method that can be used for the first wet etching treatment can be applied.
  • this process is not the display part but the connection part 140 manufacturing process, it is not limited to the first wet etching treatment, and an alkaline solution such as a tetramethylammonium hydroxide (TMAH) aqueous solution may be used. good.
  • TMAH tetramethylammonium hydroxide
  • the etching process is stopped when the sacrificial layer 118B is not completely removed and the thickness of the sacrificial layer 118B is reduced.
  • the sacrificial layer 118B in the connecting portion 140 can also be processed by the etching process described later.
  • the etching process may be stopped only by thinning a part of the insulating film 125A. Further, when the insulating film 125A is formed of the same material as the sacrificial layer 118B, the boundary between the insulating film 125A and the sacrificial layer 118B becomes unclear. There are cases where it cannot be determined whether the sacrificial layer 118B remains or whether it is thinned.
  • a region of the insulating film 127a overlapping with the pixel electrode 111R, a region overlapping with the pixel electrode 111G, and a region overlapping with the pixel electrode 111B are irradiated with visible light or ultraviolet rays to insulate them. A portion of film 127a is exposed.
  • the insulating layer 127 b is formed in a region sandwiched between any two of the pixel electrodes 111 R, 111 G, and 111 B and a region surrounding the conductive layer 123 .
  • processing conditions for the film to be the insulating layer 125 are set independently for the display portion and the connection portion 140. can be controlled to
  • the difference in etching rate between the connection portion 140 and the display portion may be sufficiently reduced depending on the etching apparatus and method. Also, depending on the layout of the connecting portion 140 and the insulating layer 127b, the difference between the etching area of the insulating film 125A in the connecting portion 140 and the etching area of the insulating film 125A in the display portion may be made sufficiently small. In such a case, as shown in FIGS. 14C and 15A, the exposure and development of the insulating film 127a are preferably performed in the same step for the display portion and the connection portion 140. FIG. Thereby, the number of steps can be reduced.
  • the display device of one embodiment of the present invention can have improved display quality.
  • heat treatment may be further performed after part of the layers 113B, 113G, and 113R are exposed.
  • heat treatment water contained in the EL layer, water adsorbed to the surface of the EL layer, and the like can be removed.
  • the shape of the insulating layer 127 might be changed by the heat treatment.
  • heat treatment heat treatment in an inert gas atmosphere or a reduced pressure atmosphere can be performed, for example.
  • the heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 120° C.
  • a reduced-pressure atmosphere is preferable because dehydration can be performed at a lower temperature.
  • the temperature range of the above heat treatment is preferably set as appropriate in consideration of the heat resistance temperature of the EL layer.
  • a temperature of 70° C. or more and 120° C. or less is particularly suitable in the above temperature range.
  • a common layer 114 and a common electrode 115 are formed in this order on the insulating layer 127, layers 113B, 113G, and 113R (FIG. 17A), and a protective layer 131 is formed (FIG. 17B). .
  • a display device can be manufactured by bonding the substrate 120 onto the protective layer 131 using the resin layer 122 (FIG. 1B).
  • the common layer 114 can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • a sputtering method or a vacuum deposition method can be used to form the common electrode 115 .
  • a film formed by an evaporation method and a film formed by a sputtering method may be stacked.
  • Methods for forming the protective layer 131 include a vacuum deposition method, a sputtering method, a CVD method, an ALD method, and the like.
  • the island-shaped layer 113B, the island-shaped layer 113G, and the island-shaped layer 113R are not formed using a fine metal mask. Since it is formed by processing after forming a film on one surface, an island-shaped layer can be formed with a uniform thickness. Then, a high-definition display device or a display device with a high aperture ratio can be realized. In addition, even if the definition or aperture ratio is high and the distance between subpixels is extremely short, it is possible to prevent the layers 113B, 113G, and 113R from contacting each other in adjacent subpixels. Therefore, it is possible to suppress the occurrence of leakage current between sub-pixels. Thereby, crosstalk due to unintended light emission can be prevented, and a display device with extremely high contrast can be realized.
  • an acidic solution is used to prevent the insulating layer 127 from eluting, while the island-shaped layers 113B, 113G, and 113R are etched away. can be exposed. Therefore, the elution of the insulating layer 127 can prevent part of the insulating layer 127 from intruding into the light-emitting region, thereby preventing pixel defects in the display device.
  • the wet etching treatment at least part of the sacrificial layers 118R, 118G, and 118B and the insulating layer 125 that overlap with the insulating layer 127 are removed, so that part of the insulating layer 127 containing an organic material becomes an island. It is in contact with a part of the EL layer having a shape. Since the interface between the insulating layer 127 and the island-shaped EL layer serves as an interface between organic materials, adhesion between the insulating layer 127 and the island-shaped EL layer can be improved. With such a configuration, the display device 100 is less prone to film peeling, and the reliability of the light-emitting device can be improved. Moreover, the production yield of the light-emitting device can be increased.
  • the arrangement of sub-pixels includes, for example, a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.
  • the top surface shape of the sub-pixel shown in the drawings in this embodiment corresponds to the top surface shape of the light emitting region (or light receiving region).
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles and squares), polygons such as pentagons, and polygons with rounded corners, ellipses, and circles.
  • circuit layout constituting the sub-pixels is not limited to the range of the sub-pixels shown in the drawing, and may be arranged outside of the sub-pixels.
  • a pixel 110 shown in FIG. 18A is composed of three sub-pixels, sub-pixels 110a, 110b, and 110c.
  • the pixel 110 shown in FIG. 18B includes a subpixel 110a having a substantially triangular top surface shape with rounded corners, a subpixel 110b having a substantially trapezoidal top surface shape with rounded corners, and a substantially quadrangular or substantially hexagonal top surface shape with rounded corners. and a sub-pixel 110c having Also, the sub-pixel 110b has a larger light emitting area than the sub-pixel 110a.
  • the shape and size of each sub-pixel can be determined independently. For example, sub-pixels with more reliable light emitting devices can be smaller in size.
  • FIG. 18C shows an example in which pixels 124a having sub-pixels 110a and 110b and pixels 124b having sub-pixels 110b and 110c are alternately arranged.
  • Pixel 124a has two sub-pixels (sub-pixels 110a and 110b) in the upper row (first row) and one sub-pixel (sub-pixel 110c) in the lower row (second row).
  • Pixel 124b has one sub-pixel (sub-pixel 110c) in the upper row (first row) and two sub-pixels (sub-pixels 110a and 110b) in the lower row (second row).
  • FIG. 18D is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. 18E is an example in which each sub-pixel has a circular top surface shape
  • FIG. which has a substantially hexagonal top shape with rounded corners.
  • each sub-pixel is arranged inside a hexagonal region that is closely arranged.
  • Each sub-pixel is arranged so as to be surrounded by six sub-pixels when focusing on one sub-pixel.
  • sub-pixels that emit light of the same color are provided so as not to be adjacent to each other.
  • the sub-pixels are provided such that three sub-pixels 110b and three sub-pixels 110c are alternately arranged so as to surround the sub-pixel 110a.
  • FIG. 18G is an example in which sub-pixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two sub-pixels (for example, sub-pixel 110a and sub-pixel 110b or sub-pixel 110b and sub-pixel 110c) aligned in the column direction are shifted.
  • the sub-pixel 110a is a sub-pixel R that emits red light
  • the sub-pixel 110b is a sub-pixel G that emits green light
  • the sub-pixel 110c is a sub-pixel that emits blue light.
  • Sub-pixel B is preferable. Note that the configuration of the sub-pixels is not limited to this, and the colors exhibited by the sub-pixels and the order in which the sub-pixels are arranged can be determined as appropriate.
  • the sub-pixel 110b may be a sub-pixel R that emits red light
  • the sub-pixel 110a may be a sub-pixel G that emits green light.
  • the top surface shape of the sub-pixel may be a polygonal shape with rounded corners, an elliptical shape, a circular shape, or the like.
  • the EL layer is processed into an island shape using a resist mask.
  • the resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, curing of the resist film may be insufficient depending on the heat resistance temperature of the EL layer material and the curing temperature of the resist material.
  • a resist film that is insufficiently hardened may take a shape away from the desired shape during processing.
  • the top surface shape of the EL layer may be a polygon with rounded corners, an ellipse, or a circle. For example, when a resist mask having a square top surface is formed, a resist mask having a circular top surface is formed, and the EL layer may have a circular top surface.
  • a technique for correcting the mask pattern in advance so that the design pattern and the transfer pattern match.
  • OPC Optical Proximity Correction
  • a pattern for correction is added to a corner portion of a figure on a mask pattern.
  • the pixel can have four types of sub-pixels.
  • a stripe arrangement is applied to the pixels 110 shown in FIGS. 19A to 19C.
  • FIG. 19A is an example in which each sub-pixel has a rectangular top surface shape
  • FIG. 19B is an example in which each sub-pixel has a top surface shape connecting two semicircles and a rectangle
  • FIG. This is an example where the sub-pixel has an elliptical top surface shape.
  • a matrix arrangement is applied to the pixels 110 shown in FIGS. 19D to 19F.
  • FIG. 19D is an example in which each sub-pixel has a square top surface shape
  • FIG. 19E is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. which have a circular top shape.
  • 19G and 19H show an example in which one pixel 110 is composed of 2 rows and 3 columns.
  • the pixel 110 shown in FIG. 19G has three sub-pixels (sub-pixels 110a, 110b, 110c) in the upper row (first row) and one sub-pixel ( sub-pixel 110d).
  • pixel 110 has sub-pixel 110a in the left column (first column), sub-pixel 110b in the middle column (second column), and sub-pixel 110b in the right column (third column). It has pixels 110c and sub-pixels 110d over these three columns.
  • the pixel 110 shown in FIG. 19H has three sub-pixels (sub-pixels 110a, 110b, 110c) in the upper row (first row) and three sub-pixels 110d in the lower row (second row). have In other words, pixel 110 has sub-pixels 110a and 110d in the left column (first column), sub-pixels 110b and 110d in the center column (second column), and sub-pixels 110b and 110d in the middle column (second column).
  • a column (third column) has a sub-pixel 110c and a sub-pixel 110d.
  • FIG. 19I shows an example in which one pixel 110 is composed of 3 rows and 2 columns.
  • the pixel 110 shown in FIG. 19I has sub-pixels 110a in the upper row (first row) and sub-pixels 110b in the middle row (second row). It has a sub-pixel 110c and one sub-pixel (sub-pixel 110d) in the lower row (third row).
  • the pixel 110 has sub-pixels 110a and 110b in the left column (first column), sub-pixel 110c in the right column (second column), and sub-pixels 110c and 110c in the right column (second column). It has a pixel 110d.
  • a pixel 110 shown in FIGS. 19A to 19I is composed of four sub-pixels 110a, 110b, 110c, and 110d.
  • the sub-pixels 110a, 110b, 110c, and 110d can be configured to have light-emitting devices that emit light of different colors.
  • As the sub-pixels 110a, 110b, 110c, and 110d four-color sub-pixels of R, G, B, and white (W), four-color sub-pixels of R, G, B, and Y, or R, G, and B , infrared light (IR) sub-pixels, and the like.
  • the sub-pixel 110a is a sub-pixel R that emits red light
  • the sub-pixel 110b is a sub-pixel G that emits green light
  • the sub-pixel 110c is a sub-pixel that emits blue light.
  • the sub-pixel 110d be the sub-pixel B that emits white light, the sub-pixel Y that emits yellow light, or the sub-pixel IR that emits near-infrared light.
  • the pixel 110 shown in FIGS. 19G and 19H has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • the pixel 110 may also have sub-pixels with light-receiving devices.
  • any one of the sub-pixels 110a to 110d may be a sub-pixel having a light receiving device.
  • the sub-pixel 110a is a sub-pixel R that emits red light
  • the sub-pixel 110b is a sub-pixel G that emits green light
  • the sub-pixel 110c is a sub-pixel that emits blue light.
  • the sub-pixel B is the sub-pixel B
  • the sub-pixel 110d is the sub-pixel S having the light-receiving device.
  • the pixel 110 shown in FIGS. 19G and 19H has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • the wavelength of light detected by the sub-pixel S having a light receiving device is not particularly limited.
  • the sub-pixel S can be configured to detect one or both of visible light and infrared light.
  • the pixel can be configured to have five types of sub-pixels.
  • FIG. 19J shows an example in which one pixel 110 is composed of 2 rows and 3 columns.
  • the pixel 110 shown in FIG. 19J has three sub-pixels (sub-pixels 110a, 110b, and 110c) in the upper row (first row) and two sub-pixels ( sub-pixels 110d and 110e).
  • pixel 110 has sub-pixels 110a and 110d in the left column (first column), sub-pixel 110b in the center column (second column), and right column (third column). has sub-pixels 110c in the second and third columns, and sub-pixels 110e in the second and third columns.
  • FIG. 19K shows an example in which one pixel 110 is composed of 3 rows and 2 columns.
  • the pixel 110 shown in FIG. 19K has sub-pixels 110a in the upper row (first row) and sub-pixels 110b in the middle row (second row). It has a sub-pixel 110c and two sub-pixels (sub-pixels 110d and 110e) in the lower row (third row). In other words, pixel 110 has sub-pixels 110a, 110b, and 110d in the left column (first column) and sub-pixels 110c and 110e in the right column (second column).
  • the sub-pixel 110a is a sub-pixel R that emits red light
  • the sub-pixel 110b is a sub-pixel G that emits green light
  • the sub-pixel 110c is a sub-pixel that emits blue light.
  • the pixel 110 shown in FIG. 19J has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • each pixel 110 shown in FIGS. 19J and 19K it is preferable to apply a sub-pixel S having a light receiving device to at least one of the sub-pixel 110d and the sub-pixel 110e.
  • the configurations of the light receiving devices may be different from each other.
  • at least a part of the wavelength regions of the light to be detected may be different.
  • one of the sub-pixel 110d and the sub-pixel 110e may have a light receiving device that mainly detects visible light, and the other may have a light receiving device that mainly detects infrared light.
  • one of the sub-pixel 110d and the sub-pixel 110e can be applied with a sub-pixel S having a light receiving device, and the other can be used as a light source. It is preferable to apply sub-pixels with light-emitting devices.
  • one of the sub-pixel 110d and the sub-pixel 110e is a sub-pixel IR that emits infrared light, and the other is a sub-pixel S that has a light receiving device that detects infrared light.
  • a pixel having sub-pixels R, G, B, IR, and S an image is displayed using the sub-pixels R, G, and B, and the sub-pixel IR is used as a light source at the sub-pixel S. Reflected infrared light can be detected.
  • various layouts can be applied to pixels each including subpixels each including a light-emitting device. Further, a structure in which a pixel includes both a light-emitting device and a light-receiving device can be applied to the display device of one embodiment of the present invention. Also in this case, various layouts can be applied.
  • the display device of this embodiment can be a high-definition display device. Therefore, the display device of the present embodiment includes, for example, display units of information terminals (wearable devices) such as wristwatch-type and bracelet-type devices, devices for VR such as head-mounted displays (HMD), and glasses. It can be used for the display part of a wearable device that can be worn on the head, such as a model AR device.
  • wearable devices such as wristwatch-type and bracelet-type devices
  • VR head-mounted displays (HMD)
  • glasses can be used for the display part of a wearable device that can be worn on the head, such as a model AR device.
  • the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used, for example, in televisions, desktop or notebook personal computers, monitors for computers, digital signage, and relatively large screens such as large game machines such as pachinko machines. It can be used for display portions of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices, in addition to electronic devices equipped with
  • Display module A perspective view of the display module 280 is shown in FIG. 20A.
  • the display module 280 has a display device 100A and an FPC 290 .
  • the display device included in the display module 280 is not limited to the display device 100A, and may be any one of the display devices 100B to 100F, which will be described later.
  • the display module 280 has substrates 291 and 292 .
  • the display module 280 has a display section 281 .
  • the display unit 281 is an area for displaying an image in the display module 280, and is an area where light from each pixel provided in the pixel unit 284, which will be described later, can be visually recognized.
  • FIG. 20B shows a perspective view schematically showing the configuration on the substrate 291 side.
  • a circuit section 282 , a pixel circuit section 283 on the circuit section 282 , and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291 .
  • a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284 .
  • the terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.
  • the pixel section 284 has a plurality of periodically arranged pixels 284a.
  • An enlarged view of one pixel 284a is shown on the right side of FIG. 20B.
  • FIG. 20B shows, as an example, the case of having the same configuration as the pixel 110 shown in FIG. 1A.
  • the pixel circuit section 283 has a plurality of periodically arranged pixel circuits 283a.
  • One pixel circuit 283a is a circuit that controls driving of a plurality of elements included in one pixel 284a.
  • One pixel circuit 283a can have a structure in which three circuits for controlling light emission of one light-emitting device are provided.
  • the pixel circuit 283a can have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light emitting device. At this time, a gate signal is inputted to the gate of the selection transistor, and a source signal is inputted to the source thereof. This realizes an active matrix display device.
  • the circuit section 282 has a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 .
  • a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 For example, it is preferable to have one or both of a gate line driver circuit and a source line driver circuit.
  • at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like may be provided.
  • the FPC 290 functions as wiring for supplying a video signal, power supply potential, or the like to the circuit section 282 from the outside. Also, an IC may be mounted on the FPC 290 .
  • the aperture ratio (effective display area ratio) of the display portion 281 is can be very high.
  • the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less.
  • the pixels 284a can be arranged at an extremely high density, and the definition of the display portion 281 can be extremely high.
  • the pixels 284a may be arranged with a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and still more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less. preferable.
  • a display module 280 Since such a display module 280 has extremely high definition, it can be suitably used for VR devices such as HMDs or glasses-type AR devices. For example, even in the case of a configuration in which the display portion of the display module 280 is viewed through a lens, the display module 280 has an extremely high-definition display portion 281, so pixels cannot be viewed even if the display portion is enlarged with the lens. , a highly immersive display can be performed.
  • the display module 280 is not limited to this, and can be suitably used for electronic equipment having a relatively small display unit. For example, it can be suitably used for a display part of a wearable electronic device such as a wristwatch.
  • a display device 100A illustrated in FIG. 21A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.
  • FIG. 21A A display device 100A illustrated in FIG. 21A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.
  • the substrate 301 corresponds to the substrate 291 in FIGS. 20A and 20B.
  • a stacked structure from the substrate 301 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 1.
  • a transistor 310 is a transistor having a channel formation region in the substrate 301 .
  • the substrate 301 for example, a semiconductor substrate such as a single crystal silicon substrate can be used.
  • Transistor 310 includes a portion of substrate 301 , conductive layer 311 , low resistance region 312 , insulating layer 313 and insulating layer 314 .
  • the conductive layer 311 functions as a gate electrode.
  • An insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
  • the low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as either a source or a drain.
  • the insulating layer 314 is provided to cover the side surface of the conductive layer 311 .
  • a device isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .
  • An insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .
  • the capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned therebetween.
  • the conductive layer 241 functions as one electrode of the capacitor 240
  • the conductive layer 245 functions as the other electrode of the capacitor 240
  • the insulating layer 243 functions as the dielectric of the capacitor 240 .
  • the conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254 .
  • Conductive layer 241 is electrically connected to one of the source or drain of transistor 310 by plug 271 embedded in insulating layer 261 .
  • An insulating layer 243 is provided over the conductive layer 241 .
  • the conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 provided therebetween.
  • the conductive layer can also be called a guard ring.
  • An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b.
  • a light emitting device 130R, a light emitting device 130G, and a light emitting device 130B are provided on the insulating layer 255c.
  • FIG. 21A shows an example in which the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B have the same laminated structure as that shown in FIG. 1B.
  • An insulator is provided in the region between adjacent light emitting devices. In FIG. 21A and the like, the insulating layer 125 and the insulating layer 127 over the insulating layer 125 are provided in the region.
  • the insulating layer 125 and the insulating layer 127 have the same structure as that shown in FIG. 1B, but are not limited to this.
  • the structures shown in FIGS. 2A-3F and combinations thereof may also be used.
  • a structure may be employed in which sacrificial layers are provided on and in contact with the layers 113R, 113G, and 113B.
  • the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B are composed of the plug 256 embedded in the insulating layer 243, the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, and the It is electrically connected to one of the source and drain of transistor 310 by plug 271 embedded in insulating layer 261 .
  • the height of the upper surface of the insulating layer 255c and the height of the upper surface of the plug 256 match or substantially match.
  • Various conductive materials can be used for the plug.
  • FIG. 21A and the like show examples in which the pixel electrode has a two-layer structure of a reflective electrode and a transparent electrode on the reflective electrode.
  • a protective layer 131 is provided on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B.
  • a substrate 120 is bonded onto the protective layer 131 with a resin layer 122 .
  • Embodiment 1 can be referred to for details of the components from the light emitting device to the substrate 120 .
  • Substrate 120 corresponds to substrate 292 in FIG. 20A.
  • the display device shown in FIGS. 21B and 21C is an example having light emitting devices 130R and 130G and a light receiving device 150.
  • FIG. Although not shown, the display also has a light emitting device 130B.
  • layers below the insulating layer 255a are omitted.
  • the display device shown in FIGS. 21B and 21C can apply any structure of the layer 101 including transistors shown in FIGS. 21A and 22 to 26, for example.
  • the light receiving device 150 has a pixel electrode 111S, a layer 113S, a common layer 114, and a common electrode 115 which are stacked.
  • Embodiments 1 and 3 can be referred to for details of the display device including the light receiving device.
  • the display device may be provided with a lens array 133, as shown in FIG. 21C.
  • the lens array 133 can be provided over one or both of the light emitting device and the light receiving device.
  • the lens array 133 can be formed using at least one of an inorganic material and an organic material.
  • a material containing resin can be used for the lens.
  • a material containing at least one of an oxide and a sulfide can be used for the lens.
  • a microlens array can be used as the lens array 133.
  • FIG. 21C shows an example in which a lens array 133 is provided over the light emitting devices 130R, 130G and the light receiving device 150 with a protective layer 131 interposed therebetween.
  • the lens array 133 may be provided on the substrate 120 and bonded onto the protective layer 131 with the resin layer 122 .
  • the temperature of the heat treatment in the process of forming the lens array 133 can be increased.
  • a display device 100B shown in FIG. 22 has a structure in which a transistor 310A and a transistor 310B each having a channel formed in a semiconductor substrate are stacked.
  • the description of the same parts as those of the previously described display device may be omitted.
  • the display device 100B has a configuration in which a substrate 301B provided with a transistor 310B, a capacitor 240, and a light emitting device and a substrate 301A provided with a transistor 310A are bonded together.
  • an insulating layer 345 on the lower surface of the substrate 301B.
  • an insulating layer 346 is preferably provided over the insulating layer 261 provided over the substrate 301A.
  • the insulating layers 345 and 346 are insulating layers that function as protective layers, and can suppress diffusion of impurities into the substrates 301B and 301A.
  • an inorganic insulating film that can be used for the protective layer 131 or the insulating layer 332 can be used.
  • a plug 343 penetrating through the substrate 301B and the insulating layer 345 is provided on the substrate 301B.
  • the insulating layer 344 is an insulating layer that functions as a protective layer and can suppress diffusion of impurities into the substrate 301B.
  • an inorganic insulating film that can be used for the protective layer 131 can be used.
  • a conductive layer 342 is provided under the insulating layer 345 on the back surface side (surface opposite to the substrate 120 side) of the substrate 301B.
  • the conductive layer 342 is preferably embedded in the insulating layer 335 .
  • the lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably planarized.
  • the conductive layer 342 is electrically connected with the plug 343 .
  • the conductive layer 341 is provided on the insulating layer 346 on the substrate 301A.
  • the conductive layer 341 is preferably embedded in the insulating layer 336 . It is preferable that top surfaces of the conductive layer 341 and the insulating layer 336 be planarized.
  • the substrates 301A and 301B are electrically connected.
  • the conductive layer 341 and the conductive layer 342 are bonded together. can be improved.
  • the same conductive material is preferably used for the conductive layers 341 and 342 .
  • a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing the above elements as components etc. can be used.
  • copper is preferably used for the conductive layers 341 and 342 .
  • a Cu—Cu (copper-copper) direct bonding technique (a technique for achieving electrical continuity by connecting Cu (copper) pads) can be applied.
  • a display device 100 ⁇ /b>C shown in FIG. 23 has a configuration in which a conductive layer 341 and a conductive layer 342 are bonded via bumps 347 .
  • the conductive layers 341 and 342 can be electrically connected.
  • the bumps 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Also, for example, solder may be used as the bumps 347 . Further, an adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346 . Further, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.
  • Display device 100D A display device 100D shown in FIG. 24 is mainly different from the display device 100A in that the configuration of transistors is different.
  • the transistor 320 is a transistor (hereinafter also referred to as an OS transistor) in which a metal oxide having semiconductor characteristics (also referred to as an oxide semiconductor) is applied to a semiconductor layer in which a channel is formed.
  • OS transistor a transistor in which a metal oxide having semiconductor characteristics (also referred to as an oxide semiconductor) is applied to a semiconductor layer in which a channel is formed.
  • a transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .
  • the substrate 331 corresponds to the substrate 291 in FIGS. 20A and 20B.
  • a stacked structure from the substrate 331 to the insulating layer 255c corresponds to the layer 101 including the transistor in Embodiment 1.
  • the substrate 331 an insulating substrate or a semiconductor substrate can be used.
  • An insulating layer 332 is provided on the substrate 331 .
  • the insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 into the transistor 320 and oxygen from the semiconductor layer 321 toward the insulating layer 332 side.
  • a film into which hydrogen or oxygen is less likely to diffuse than a silicon oxide film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.
  • a conductive layer 327 is provided over the insulating layer 332 , and an insulating layer 326 is provided to cover the conductive layer 327 .
  • the conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer.
  • An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321 .
  • the upper surface of the insulating layer 326 is preferably planarized.
  • the semiconductor layer 321 is provided on the insulating layer 326 .
  • the semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film having semiconductor characteristics.
  • a pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.
  • An insulating layer 328 is provided covering the top and side surfaces of the pair of conductive layers 325 and the side surface of the semiconductor layer 321, and the insulating layer 264 is provided on the insulating layer 328.
  • the insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264 or the like and oxygen from leaving the semiconductor layer 321 .
  • an insulating film similar to the insulating layer 332 can be used as the insulating layer 328.
  • An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264 .
  • the insulating layer 323 and the conductive layer 324 are buried in contact with the side surfaces of the insulating layer 264 , the insulating layer 328 , and the conductive layer 325 and the top surface of the semiconductor layer 321 .
  • the conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.
  • the top surface of the conductive layer 324, the top surface of the insulating layer 323, and the top surface of the insulating layer 264 are planarized so that their heights are the same or substantially the same, and the insulating layers 329 and 265 are provided to cover them. ing.
  • the insulating layers 264 and 265 function as interlayer insulating layers.
  • the insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the transistor 320 from the insulating layer 265 or the like.
  • an insulating film similar to the insulating layers 328 and 332 can be used.
  • a plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layers 265 , 329 and 264 .
  • the plug 274 includes a conductive layer 274a that covers the side surfaces of the openings of the insulating layers 265, the insulating layers 329, the insulating layers 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and the conductive layer 274a. It is preferable to have a conductive layer 274b in contact with the top surface. At this time, a conductive material into which hydrogen and oxygen are difficult to diffuse is preferably used for the conductive layer 274a.
  • a display device 100E illustrated in FIG. 25 has a structure in which a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed are stacked.
  • the display device 100D described above can be used for the configuration of the transistor 320A, the transistor 320B, and their peripherals.
  • transistors each including an oxide semiconductor are stacked here, the structure is not limited to this.
  • a structure in which three or more transistors are stacked may be employed.
  • a display device 100F illustrated in FIG. 26 has a structure in which a transistor 310 in which a channel is formed over a substrate 301 and a transistor 320 including a metal oxide in a semiconductor layer in which the channel is formed are stacked.
  • An insulating layer 261 is provided to cover the transistor 310 , and a conductive layer 251 is provided over the insulating layer 261 .
  • An insulating layer 262 is provided to cover the conductive layer 251 , and the conductive layer 252 is provided over the insulating layer 262 .
  • the conductive layers 251 and 252 each function as wirings.
  • An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252 , and the transistor 320 is provided over the insulating layer 332 .
  • An insulating layer 265 is provided to cover the transistor 320 and a capacitor 240 is provided over the insulating layer 265 . Capacitor 240 and transistor 320 are electrically connected by plug 274 .
  • the transistor 320 can be used as a transistor forming a pixel circuit. Further, the transistor 310 can be used as a transistor forming a pixel circuit or a transistor forming a driver circuit (a gate line driver circuit or a source line driver circuit) for driving the pixel circuit. Further, the transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit and a memory circuit.
  • FIG. 27 shows a perspective view of the display device 100G
  • FIG. 28A shows a cross-sectional view of the display device 100G.
  • the display device 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together.
  • the substrate 152 is clearly indicated by dashed lines.
  • the display device 100G has a display section 162, a connection section 140, a circuit 164, wiring 165, and the like.
  • FIG. 27 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in FIG. 27 can also be said to be a display module including the display device 100G, an IC (integrated circuit), and an FPC.
  • connection part 140 is provided outside the display part 162 .
  • the connection portion 140 can be provided along one side or a plurality of sides of the display portion 162 .
  • the number of connection parts 140 may be singular or plural.
  • FIG. 27 shows an example in which connecting portions 140 are provided so as to surround the four sides of the display portion.
  • the connection part 140 the common electrode of the light emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.
  • a scanning line driving circuit for example, can be used as the circuit 164 .
  • the wiring 165 has a function of supplying signals and power to the display section 162 and the circuit 164 .
  • the signal and power are externally input to the wiring 165 via the FPC 172 or input to the wiring 165 from the IC 173 .
  • FIG. 27 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like.
  • a COG Chip On Glass
  • COF Chip On Film
  • the IC 173 for example, an IC having a scanning line driver circuit or a signal line driver circuit can be applied.
  • the display device 100G and the display module may be configured without an IC.
  • the IC may be mounted on the FPC by the COF method or the like.
  • part of the area including the FPC 172, part of the circuit 164, part of the display part 162, part of the connection part 140, and part of the area including the end of the display device 100G are cut off.
  • An example of a cross section is shown.
  • the display device 100G illustrated in FIG. 28A includes a transistor 201 and a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device that emits blue light. It has a device 130B and the like.
  • the light-emitting devices 130R, 130G, and 130B each have the same structure as the laminated structure shown in FIG. 1B, except that the pixel electrodes have different configurations.
  • Embodiment 1 can be referred to for details of the light-emitting device.
  • the light emitting device 130R has a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R. All of the conductive layers 112R, 126R, and 129R can be called pixel electrodes, and some of them can also be called pixel electrodes.
  • the light emitting device 130G has a conductive layer 112G, a conductive layer 126G over the conductive layer 112G, and a conductive layer 129G over the conductive layer 126G.
  • the light emitting device 130B has a conductive layer 112B, a conductive layer 126B on the conductive layer 112B, and a conductive layer 129B on the conductive layer 126B.
  • the conductive layer 112R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214.
  • the end of the conductive layer 126R is positioned outside the end of the conductive layer 112R.
  • the end of the conductive layer 126R and the end of the conductive layer 129R are aligned or substantially aligned.
  • a conductive layer functioning as a reflective electrode can be used for the conductive layers 112R and 126R
  • a conductive layer functioning as a transparent electrode can be used for the conductive layer 129R.
  • the conductive layers 112G, 126G, and 129G in the light-emitting device 130G and the conductive layers 112B, 126B, and 129B in the light-emitting device 130B are the same as the conductive layers 112R, 126R, and 129R in the light-emitting device 130R, so detailed description thereof is omitted. .
  • Concave portions are formed in the conductive layers 112R, 112G, and 112B so as to cover the openings provided in the insulating layer 214.
  • a layer 128 is embedded in the recess.
  • the layer 128 has the function of planarizing the concave portions of the conductive layers 112R, 112G, and 112B.
  • Conductive layers 126R, 126G, and 126B electrically connected to the conductive layers 112R, 112G, and 112B are provided over the conductive layers 112R, 112G, and 112B and the layer 128.
  • FIG. Therefore, the regions overlapping the concave portions of the conductive layers 112R, 112G, and 112B can also be used as light emitting regions, and the aperture ratio of pixels can be increased.
  • the layer 128 may be an insulating layer or a conductive layer.
  • Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for layer 128 .
  • layer 128 is preferably formed using an insulating material, and particularly preferably formed using an organic insulating material.
  • an organic insulating material that can be used for the insulating layer 127 described above can be applied.
  • the top and side surfaces of the conductive layers 126R and 129R are covered with the layer 113R.
  • the top and sides of conductive layers 126G and 129G are covered by layer 113G
  • the top and sides of conductive layers 126B and 129B are covered by layer 113B. Therefore, the entire regions where the conductive layers 126R, 126G, and 126B are provided can be used as the light emitting regions of the light emitting devices 130R, 130G, and 130B, so the aperture ratio of the pixels can be increased.
  • a part of the upper surface and the side surface of each of the layers 113B, 113G, and 113R are covered with 127.
  • An insulating layer 125 is provided under the insulating layer 127 .
  • insulating layer 125 and insulating layer 127 have the same structure as that shown in FIG. 1B, but the structure is not limited to this.
  • the structures shown in FIGS. 2A-3F and combinations thereof may also be used.
  • a structure in which sacrificial layers are provided on and in contact with the layers 113B, 113G, and 113R may be employed.
  • a common layer 114 is provided on the layers 113B, 113G, 113R, and the insulating layers 125 and 127, and a common electrode 115 is provided on the common layer 114.
  • Each of the common layer 114 and the common electrode 115 is a series of films provided in common to a plurality of light emitting devices.
  • a protective layer 131 is provided on the light emitting devices 130R, 130G, and 130B.
  • the protective layer 131 and the substrate 152 are adhered via the adhesive layer 142 .
  • a light shielding layer 117 is provided on the substrate 152 .
  • a solid sealing structure, a hollow sealing structure, or the like can be applied to sealing the light-emitting device.
  • the space between substrates 152 and 151 is filled with an adhesive layer 142 to apply a solid sealing structure.
  • the space may be filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure.
  • the adhesive layer 142 may be provided so as not to overlap the light emitting device.
  • the space may be filled with a resin different from the adhesive layer 142 provided in a frame shape.
  • the protective layer 131 is provided at least on the display section 162 and is preferably provided so as to cover the entire display section 162 .
  • the protective layer 131 is preferably provided so as to cover not only the display portion 162 but also the connection portion 140 and the circuit 164 .
  • the protective layer 131 is provided up to the end of the display device 100G.
  • the connecting portion 204 has a portion where the protective layer 131 is not provided in order to electrically connect the FPC 172 and the conductive layer 166 .
  • a connecting portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap.
  • the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connecting layer 242 .
  • the conductive layer 166 includes a conductive film obtained by processing the same conductive film as the conductive layers 112R, 112G, and 112B and a conductive film obtained by processing the same conductive film as the conductive layers 126R, 126G, and 126B. , and a conductive film obtained by processing the same conductive film as the conductive layers 129R, 129G, and 129B.
  • the conductive layer 166 is exposed on the upper surface of the connecting portion 204 . Thereby, the connecting portion 204 and the FPC 172 can be electrically connected via the connecting layer 242 .
  • the conductive layer 166 can be exposed by removing the region of the protective layer 131 overlapping the conductive layer 166 using a mask.
  • a layered structure of at least one organic layer and a conductive layer may be provided on the conductive layer 166, and the protective layer 131 may be provided on the layered structure. Then, using a laser or a sharp edged tool (e.g., a needle or a cutter) on the laminated structure, a peeling starting point (a portion that triggers peeling) is formed, and the laminated structure and the protective layer thereon are formed. 131 may be selectively removed to expose conductive layer 166 .
  • the protective layer 131 can be selectively removed by pressing an adhesive roller against the substrate 151 and relatively moving the roller while rotating. Alternatively, an adhesive tape may be attached to the substrate 151 and removed.
  • the adhesion between the organic layer and the conductive layer or the adhesion between the organic layers is low, separation occurs at the interface between the organic layer and the conductive layer or within the organic layer. Accordingly, a region of the protective layer 131 overlapping with the conductive layer 166 can be selectively removed. Note that when an organic layer or the like remains over the conductive layer 166, it can be removed with an organic solvent or the like.
  • the organic layer for example, at least one organic layer (a layer that functions as a light-emitting layer, a carrier block layer, a carrier transport layer, or a carrier injection layer) used for any one of the layers 113B, 113G, and 113R is used. be able to.
  • the organic layer may be formed at the same time when any one of the layers 113B, 113G, and 113R is formed, or may be provided separately.
  • the conductive layer can be formed using the same process and the same material as the common electrode 115 .
  • an ITO film is preferably formed as the common electrode 115 and the conductive layer. Note that in the case where the common electrode 115 has a stacked-layer structure, at least one of the layers forming the common electrode 115 is provided as a conductive layer.
  • the top surface of the conductive layer 166 may be covered with a mask so that the protective layer 131 is not formed over the conductive layer 166 .
  • a mask for example, a metal mask (area metal mask) may be used, or an adhesive or adsorptive tape or film may be used.
  • connection portion 204 a region where the protective layer 131 is not provided is formed in the connection portion 204, and the conductive layer 166 and the FPC 172 can be electrically connected through the connection layer 242 in this region. .
  • a conductive layer 123 is provided on the insulating layer 214 in the connecting portion 140 .
  • the conductive layer 123 includes a conductive film obtained by processing the same conductive film as the conductive layers 112R, 112G, and 112B and a conductive film obtained by processing the same conductive film as the conductive layers 126R, 126G, and 126B. , and a conductive film obtained by processing the same conductive film as the conductive layers 129R, 129G, and 129B.
  • the ends of the conductive layer 123 are covered with a sacrificial layer 118B, an insulating layer 125, and an insulating layer 127.
  • a common layer 114 is provided over the conductive layer 123 , and a common electrode 115 is provided over the common layer 114 .
  • the conductive layer 123 and the common electrode 115 are electrically connected through the common layer 114 .
  • the common layer 114 may not be formed in the connecting portion 140 . In this case, the conductive layer 123 and the common electrode 115 are directly contacted and electrically connected.
  • the display device 100G is of the top emission type. Light emitted by the light emitting device is emitted to the substrate 152 side. A material having high visible light transmittance is preferably used for the substrate 152 .
  • the pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.
  • a layered structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 including the transistor in the first embodiment.
  • Both the transistor 201 and the transistor 205 are formed over the substrate 151 . These transistors can be made with the same material and the same process.
  • An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided on the substrate 151 in this order.
  • Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
  • Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
  • An insulating layer 215 is provided over the transistor.
  • An insulating layer 214 is provided over the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering a transistor are not limited, and each may have a single layer or two or more layers.
  • a material in which impurities such as water and hydrogen are difficult to diffuse for at least one insulating layer covering the transistor.
  • Inorganic insulating films are preferably used for the insulating layer 211, the insulating layer 213, and the insulating layer 215, respectively.
  • As the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the insulating films described above may be laminated and used.
  • An organic insulating layer is suitable for the insulating layer 214 that functions as a planarization layer.
  • Materials that can be used for the organic insulating layer include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimideamide resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, precursors of these resins, and the like.
  • the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer.
  • the insulating layer 214 can be formed of recesses in the insulating layer 214 when the conductive layer 112R, the conductive layer 126R, or the conductive layer 129R is processed.
  • the insulating layer 214 may be provided with recesses during processing of the conductive layer 112R, the conductive layer 126R, or the conductive layer 129R.
  • the transistors 201 and 205 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as sources and drains, a semiconductor layer 231, and an insulating layer functioning as a gate insulating layer. It has a layer 213 and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to a plurality of layers obtained by processing the same conductive film.
  • the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231 .
  • the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231 .
  • the structure of the transistor included in the display device of this embodiment there is no particular limitation on the structure of the transistor included in the display device of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistors 201 and 205 .
  • a transistor may be driven by connecting two gates and applying the same signal to them.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • the crystallinity of the semiconductor material used for the transistor is not particularly limited, either. (semiconductors having A single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration in transistor characteristics can be suppressed.
  • a semiconductor layer of a transistor preferably includes a metal oxide (also referred to as an oxide semiconductor) having semiconductor properties.
  • the display device of this embodiment preferably uses a transistor (OS transistor) in which a metal oxide is used for a channel formation region.
  • metal oxides examples include indium oxide, gallium oxide, and zinc oxide.
  • the metal oxide preferably contains two or three elements selected from indium, the element M, and zinc.
  • Element M includes gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium.
  • the element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) is preferably used as the metal oxide used for the semiconductor layer.
  • an oxide containing indium, tin, and zinc also referred to as ITZO (registered trademark)
  • ITZO registered trademark
  • oxides containing indium, gallium, tin, and zinc are preferably used.
  • an oxide containing indium (In), aluminum (Al), and zinc (Zn) also referred to as IAZO
  • an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) is preferably used.
  • the atomic ratio of In in the In-M-Zn oxide is preferably equal to or higher than the atomic ratio of M.
  • the semiconductor layer may have two or more metal oxide layers with different compositions.
  • the element M it is particularly preferable to use gallium or aluminum.
  • a stacked structure of one selected from indium oxide, indium gallium oxide, and IGZO and one selected from IAZO, IAGZO, and ITZO (registered trademark). may be used.
  • crystalline oxide semiconductors examples include CAAC (c-axis-aligned crystalline)-OS, nc (nanocrystalline)-OS, and the like.
  • a transistor using silicon for a channel formation region may be used.
  • silicon examples include monocrystalline silicon, polycrystalline silicon, amorphous silicon, and the like.
  • a transistor including low-temperature polysilicon (LTPS) in a semiconductor layer hereinafter also referred to as an LTPS transistor
  • the LTPS transistor has high field effect mobility and good frequency characteristics.
  • Si transistors such as LTPS transistors
  • circuits that need to be driven at high frequencies for example, source driver circuits
  • An OS transistor has extremely high field effect mobility compared to a transistor using amorphous silicon.
  • an OS transistor has extremely low source-drain leakage current (hereinafter also referred to as an off-state current) in an off state, and can retain charge accumulated in a capacitor connected in series with the transistor for a long time. is possible. Further, by using the OS transistor, power consumption of the display device can be reduced.
  • the amount of current flowing through the light emitting device it is necessary to increase the amount of current flowing through the light emitting device.
  • the OS transistor when the transistor operates in the saturation region, the OS transistor can reduce the change in the current between the source and the drain with respect to the change in the voltage between the gate and the source compared to the Si transistor. Therefore, by applying an OS transistor as a drive transistor included in a pixel circuit, the current flowing between the source and the drain can be finely determined according to the change in the voltage between the gate and the source. can be controlled. Therefore, the number of gradations in the pixel circuit can be increased.
  • the OS transistor flows a more stable current (saturation current) than the Si transistor even when the source-drain voltage gradually increases. be able to. Therefore, by using the OS transistor as the driving transistor, a stable current can be supplied to the light-emitting device even when the current-voltage characteristics of the EL device vary, for example. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so that the light emission luminance of the light-emitting device can be stabilized.
  • an OS transistor as a driving transistor included in a pixel circuit, it is possible to suppress black floating, increase emission luminance, provide multiple gradations, and suppress variations in light emitting devices. can be planned.
  • the transistor included in the circuit 164 and the transistor included in the display portion 162 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 164 may all have the same structure, or may have two or more types.
  • the structures of the plurality of transistors included in the display portion 162 may all be the same, or may be of two or more types.
  • All of the transistors in the display portion 162 may be OS transistors, all of the transistors in the display portion 162 may be Si transistors, or some of the transistors in the display portion 162 may be OS transistors and the rest may be Si transistors. good.
  • LTPS transistors and OS transistors in the display portion 162
  • a display device with low power consumption and high driving capability can be realized.
  • a structure in which an LTPS transistor and an OS transistor are combined is sometimes called an LTPO.
  • an OS transistor as a transistor or the like that functions as a switch for controlling conduction/non-conduction between wirings, and use an LTPS transistor as a transistor or the like that controls current.
  • one of the transistors included in the display portion 162 functions as a transistor for controlling the current flowing through the light emitting device and can also be called a driving transistor.
  • One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light emitting device.
  • An LTPS transistor is preferably used as the driving transistor. This makes it possible to increase the current flowing through the light emitting device in the pixel circuit.
  • the other transistor included in the display unit 162 functions as a switch for controlling selection and non-selection of pixels, and can also be called a selection transistor.
  • the gate of the selection transistor is electrically connected to the gate line, and one of the source and the drain is electrically connected to the source line (signal line).
  • An OS transistor is preferably used as the selection transistor.
  • the display device of one embodiment of the present invention can have high aperture ratio, high definition, high display quality, and low power consumption.
  • the display device of one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML (metal maskless) structure.
  • MML metal maskless
  • leakage current that can flow through the transistor and leakage current that can flow between adjacent light-emitting devices also referred to as lateral leakage current, side leakage current, or the like
  • an observer can observe any one or more of sharpness of the image, sharpness of the image, high saturation, and high contrast ratio.
  • a layer provided between light-emitting devices (for example, an organic layer commonly used between light-emitting devices, also referred to as a common layer) is Due to the divided structure, side leaks can be eliminated or extremely reduced.
  • 28B and 28C show other configuration examples of the transistor.
  • the transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low-resistance regions 231n, and one of the pair of low-resistance regions 231n.
  • a conductive layer 222a connected to a pair of low-resistance regions 231n, a conductive layer 222b connected to the other of a pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223 have
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
  • the insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i.
  • an insulating layer 218 may be provided to cover the transistor.
  • the transistor 209 shown in FIG. 28B shows an example in which the insulating layer 225 covers the upper surface and side surfaces of the semiconductor layer 231 .
  • the conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively.
  • One of the conductive layers 222a and 222b functions as a source and the other functions as a drain.
  • the insulating layer 225 overlaps the channel formation region 231i of the semiconductor layer 231 and does not overlap the low resistance region 231n.
  • the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low resistance region 231n through openings in the insulating layer 215, respectively.
  • a light shielding layer 117 is preferably provided on the surface of the substrate 152 on the substrate 151 side.
  • the light shielding layer 117 can be provided between adjacent light emitting devices, the connection portion 140, the circuit 164, and the like. Also, various optical members can be arranged outside the substrate 152 .
  • Materials that can be used for the substrate 120 can be used for the substrates 151 and 152, respectively.
  • a material that can be used for the resin layer 122 can be applied as the adhesive layer 142 .
  • connection layer 242 an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.
  • ACF Anisotropic Conductive Film
  • ACP Anisotropic Conductive Paste
  • Display device 100H A display device 100H shown in FIG. 29A is mainly different from the display device 100G in that it is a bottom emission type display device.
  • the light emitted by the light emitting device is emitted to the substrate 151 side.
  • a material having high visible light transmittance is preferably used for the substrate 151 .
  • the material used for the substrate 152 may or may not be translucent.
  • a light shielding layer 117 is preferably formed between the substrate 151 and the transistor 201 and between the substrate 151 and the transistor 205 .
  • FIG. 29A shows an example in which the light-blocking layer 117 is provided over the substrate 151 , the insulating layer 153 is provided over the light-blocking layer 117 , and the transistors 201 and 205 are provided over the insulating layer 153 .
  • the light emitting device 130R has a conductive layer 112R, a conductive layer 126R on the conductive layer 112R, and a conductive layer 129R on the conductive layer 126R.
  • the light emitting device 130G has a conductive layer 112G, a conductive layer 126G over the conductive layer 112G, and a conductive layer 129G over the conductive layer 126G.
  • conductive layers 112R, 112G, 126R, 126G, 129R, and 129G materials with high visible light transmittance are used.
  • a material that reflects visible light is preferably used for the common electrode 115 .
  • 28A and 29A show an example in which the upper surface of the layer 128 has a flat portion, but the shape of the layer 128 is not particularly limited.
  • a variation of layer 128 is shown in Figures 29B-29D.
  • the upper surface of the layer 128 can be configured to have a shape in which the center and its vicinity are depressed in a cross-sectional view, that is, a shape having a concave curved surface.
  • the upper surface of the layer 128 can be configured to have a shape in which the center and the vicinity thereof bulge in a cross-sectional view, that is, have a convex curved surface.
  • the top surface of the layer 128 may have one or both of a convex curved surface and a concave curved surface.
  • the number of convex curved surfaces and concave curved surfaces that the upper surface of the layer 128 has is not limited, and may be one or more.
  • the height of the top surface of the layer 128 and the height of the top surface of the conductive layer 112R may match or substantially match, or may differ from each other.
  • the height of the top surface of layer 128 may be lower or higher than the height of the top surface of conductive layer 112R.
  • FIG. 29B can also be said to be an example in which the layer 128 is accommodated inside the recess of the conductive layer 112R.
  • the layer 128 may exist outside the recess of the conductive layer 112R, that is, the upper surface of the layer 128 may be wider than the recess.
  • Display device 100J A display device 100J shown in FIG. 30 is mainly different from the display device 100G in that a light receiving device 150 is provided.
  • the light receiving device 150 has a conductive layer 112S, a conductive layer 126S on the conductive layer 112S, and a conductive layer 129S on the conductive layer 126S.
  • the conductive layer 112S is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214.
  • Layer 113S has at least an active layer.
  • a portion of the upper surface and side surfaces of the layer 113S are covered with an insulating layer 127.
  • An insulating layer 125 is provided under the insulating layer 127 .
  • insulating layer 125 and insulating layer 127 have the same structure as that shown in FIG. 1B, but are not limited to this.
  • the structures shown in FIGS. 2A-3F and combinations thereof may also be used.
  • a structure in which a sacrificial layer is provided on and in contact with the layer 113S may be employed.
  • a common layer 114 is provided on the layer 113 S and the insulating layers 125 and 127 , and a common electrode 115 is provided on the common layer 114 .
  • the common layer 114 is a continuous film that is commonly provided for the light receiving device and the light emitting device.
  • Embodiments 1 and 3 can be referred to.
  • An electronic device of this embodiment includes the display device of one embodiment of the present invention in a display portion.
  • the display device of one embodiment of the present invention can easily have high definition and high resolution. Therefore, it can be used for display portions of various electronic devices.
  • Examples of electronic devices include televisions, desktop or notebook personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices with relatively large screens. Examples include cameras, digital video cameras, digital photo frames, mobile phones, mobile game machines, mobile information terminals, and sound reproducing devices.
  • the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
  • electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.
  • wearable devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.
  • a wearable device that can be attached to a part is exemplified.
  • a display device of one embodiment of the present invention includes HD (1280 ⁇ 720 pixels), FHD (1920 ⁇ 1080 pixels), WQHD (2560 ⁇ 1440 pixels), WQXGA (2560 ⁇ 1600 pixels), 4K (2560 ⁇ 1600 pixels), 3840 ⁇ 2160) and 8K (7680 ⁇ 4320 pixels).
  • the resolution it is preferable to set the resolution to 4K, 8K, or higher.
  • the pixel density (definition) of the display device of one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, and 3000 ppi or more.
  • the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, 16:10.
  • the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage , power, radiation, flow, humidity, gradient, vibration, odor or infrared sensing, detection or measurement).
  • the electronic device of this embodiment can have various functions. For example, functions to display various information (still images, moving images, text images, etc.) on the display unit, touch panel functions, calendars, functions to display the date or time, functions to execute various software (programs), wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.
  • FIGS. 31A to 31D An example of a wearable device that can be worn on the head will be described with reference to FIGS. 31A to 31D.
  • These wearable devices have at least one of a function of displaying AR content, a function of displaying VR content, a function of displaying SR content, and a function of displaying MR content.
  • the electronic device has a function of displaying at least one content such as AR, VR, SR, and MR, it is possible to enhance the immersive feeling of the user.
  • Electronic device 700A shown in FIG. 31A and electronic device 700B shown in FIG. It has a control section (not shown), an imaging section (not shown), a pair of optical members 753 , a frame 757 and a pair of nose pads 758 .
  • the display device of one embodiment of the present invention can be applied to the display panel 751 . Therefore, the electronic device can display images with extremely high definition.
  • the electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto the display area 756 of the optical member 753. Since the optical member 753 has translucency, the user can see the image displayed in the display area superimposed on the transmitted image visually recognized through the optical member 753 . Therefore, the electronic device 700A and the electronic device 700B are electronic devices capable of AR display.
  • the electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front as an imaging unit. Further, the electronic devices 700A and 700B each include an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in the display area 756. You can also
  • the communication unit has a wireless communication device, and can supply video signals, etc. by the wireless communication device.
  • a connector to which a cable to which a video signal and a power supply potential are supplied may be provided.
  • the electronic device 700A and the electronic device 700B are provided with batteries, and can be charged wirelessly and/or wiredly.
  • the housing 721 may be provided with a touch sensor module.
  • the touch sensor module has a function of detecting that the outer surface of the housing 721 is touched.
  • the touch sensor module can detect a user's tap operation or slide operation and execute various processes. For example, it is possible to perform processing such as pausing or resuming a moving image by a tap operation, and fast-forward or fast-reverse processing can be performed by a slide operation. Further, by providing a touch sensor module for each of the two housings 721, the range of operations can be expanded.
  • Various touch sensors can be applied as the touch sensor module.
  • various methods such as a capacitance method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be adopted.
  • a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light receiving device.
  • a photoelectric conversion device also referred to as a photoelectric conversion element
  • One or both of an inorganic semiconductor and an organic semiconductor can be used for the active layer of the photoelectric conversion device.
  • Electronic device 800A shown in FIG. 31C and electronic device 800B shown in FIG. It has a pair of imaging units 825 and a pair of lenses 832 .
  • the display device of one embodiment of the present invention can be applied to the display portion 820 . Therefore, the electronic device can display images with extremely high definition. This allows the user to feel a high sense of immersion.
  • the display unit 820 is provided inside the housing 821 at a position where it can be viewed through the lens 832 . By displaying different images on the pair of display portions 820, three-dimensional display using parallax can be performed.
  • Each of the electronic device 800A and the electronic device 800B can be said to be an electronic device for VR.
  • a user wearing electronic device 800 ⁇ /b>A or electronic device 800 ⁇ /b>B can view an image displayed on display unit 820 through lens 832 .
  • the electronic device 800A and the electronic device 800B each have a mechanism that can adjust the left and right positions of the lens 832 and the display unit 820 so that they are optimally positioned according to the position of the user's eyes. preferably. In addition, it is preferable to have a mechanism for adjusting focus by changing the distance between the lens 832 and the display portion 820 .
  • the wearing section 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head.
  • the shape is illustrated as a temple of eyeglasses (also referred to as a temple), but the shape is not limited to this.
  • the mounting portion 823 may be worn by the user, and may be, for example, a helmet-type or band-type shape.
  • the imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820 . An image sensor can be used for the imaging unit 825 . Also, a plurality of cameras may be provided so as to be able to deal with a plurality of angles of view such as telephoto and wide angle.
  • a distance measuring sensor capable of measuring the distance of an object
  • the imaging unit 825 is one aspect of the detection unit.
  • the detection unit for example, an image sensor or a distance image sensor such as LIDAR (Light Detection and Ranging) can be used.
  • LIDAR Light Detection and Ranging
  • the electronic device 800A may have a vibration mechanism that functions as bone conduction earphones.
  • a vibration mechanism that functions as bone conduction earphones.
  • one or more of the display portion 820, the housing 821, and the mounting portion 823 can be provided with the vibration mechanism.
  • the user can enjoy video and audio simply by wearing the electronic device 800A without the need for separate audio equipment such as headphones, earphones, or speakers.
  • the electronic device 800A and the electronic device 800B may each have an input terminal.
  • the input terminal can be connected to a cable that supplies a video signal from a video output device or the like and power or the like for charging a battery provided in the electronic device.
  • the electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750.
  • Earphone 750 has a communication unit (not shown) and has a wireless communication function.
  • the earphone 750 can receive information (eg, audio data) from the electronic device by wireless communication function.
  • information eg, audio data
  • electronic device 700A shown in FIG. 31A has a function of transmitting information to earphone 750 by a wireless communication function.
  • electronic device 800A shown in FIG. 31C has a function of transmitting information to earphone 750 by a wireless communication function.
  • the electronic device may have an earphone section.
  • Electronic device 700B shown in FIG. 31B has earphone section 727 .
  • the earphone section 727 and the control section can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 727 and the control section may be arranged inside the housing 721 or the mounting section 723 .
  • the electronic device 800B shown in FIG. 31D has an earphone section 827.
  • the earphone unit 827 and the control unit 824 can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 827 and the control section 824 may be arranged inside the housing 821 or the mounting section 823 .
  • the earphone section 827 and the mounting section 823 may have magnets. Accordingly, the earphone section 827 can be fixed to the mounting section 823 by magnetic force, which is preferable because it facilitates storage.
  • the electronic device may have an audio output terminal to which earphones or headphones can be connected. Also, the electronic device may have one or both of an audio input terminal and an audio input mechanism.
  • the voice input mechanism for example, a sound collecting device such as a microphone can be used. By providing the electronic device with a voice input mechanism, the electronic device may function as a so-called headset.
  • the electronic device of one embodiment of the present invention includes both glasses type (electronic device 700A, electronic device 700B, etc.) and goggle type (electronic device 800A, electronic device 800B, etc.). preferred.
  • the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.
  • An electronic device 6500 shown in FIG. 32A is a mobile information terminal that can be used as a smart phone.
  • the electronic device 6500 has a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • a display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502 .
  • FIG. 32B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.
  • a light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printer are placed in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • a portion of the display panel 6511 is folded back in a region outside the display portion 6502, and the FPC 6515 is connected to the folded portion.
  • An IC6516 is mounted on the FPC6515.
  • the FPC 6515 is connected to terminals provided on the printed circuit board 6517 .
  • the display device of one embodiment of the present invention can be applied to the display panel 6511 . Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and the large-capacity battery 6518 can be mounted. In addition, by folding back part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • the operation of the television apparatus 7100 shown in FIG. 32C can be performed using operation switches provided in the housing 7101 and a separate remote control operation device 7111 .
  • the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display section for displaying information output from the remote controller 7111 .
  • a channel and a volume can be operated with operation keys or a touch panel provided in the remote controller 7111 , and an image displayed on the display portion 7000 can be operated.
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers, etc.) information communication. is also possible.
  • FIG. 32D shows an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • FIGS. 32E and 32F An example of digital signage is shown in FIGS. 32E and 32F.
  • a digital signage 7300 shown in FIG. 32E includes a housing 7301, a display unit 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), connection terminals, various sensors, a microphone, and the like.
  • FIG. 32F is a digital signage 7400 attached to a cylindrical post 7401.
  • a digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 in FIGS. 32E and 32F.
  • the wider the display unit 7000 the more information can be provided at once.
  • the wider the display unit 7000 the more conspicuous it is, and the more effective the advertisement can be, for example.
  • a touch panel By applying a touch panel to the display unit 7000, not only can images or moving images be displayed on the display unit 7000, but also the user can intuitively operate the display unit 7000, which is preferable. Further, when used for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or digital signage 7400 is preferably capable of cooperating with an information terminal 7311 or 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 can execute a game using the screen of the information terminal 7311 or 7411 as an operation means (controller). This allows an unspecified number of users to simultaneously participate in and enjoy the game.
  • the electronic device shown in FIGS. 33A to 33G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays , detection or measurement), a microphone 9008, and the like.
  • the display device of one embodiment of the present invention can be applied to the display portion 9001 in FIGS. 33A to 33G.
  • the electronic devices shown in FIGS. 33A to 33G have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display the date or time, a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device is equipped with a camera, etc., and has the function of capturing still images or moving images and storing them in a recording medium (external or built into the camera), or the function of displaying the captured image on the display unit, etc. good.
  • FIGS. 33A to 33G Details of the electronic devices shown in FIGS. 33A to 33G will be described below.
  • FIG. 33A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as a smart phone, for example.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display text and image information on its multiple surfaces.
  • FIG. 33A shows an example in which three icons 9050 are displayed.
  • Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display portion 9001 . Examples of the information 9051 include notification of incoming e-mail, SNS, telephone call, title of e-mail or SNS, sender name, date and time, remaining battery power, radio wave intensity, and the like.
  • an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 33B is a perspective view showing the mobile information terminal 9102.
  • the portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001 .
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can confirm the information 9053 displayed at a position where the mobile information terminal 9102 can be viewed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of the clothes.
  • the user can check the display without taking out the portable information terminal 9102 from the pocket, and can determine, for example, whether to receive a call.
  • FIG. 33C is a perspective view showing the tablet terminal 9103.
  • the tablet terminal 9103 can execute various applications such as mobile phone, e-mail, reading and creating text, playing music, Internet communication, and computer games.
  • the tablet terminal 9103 has a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and connection terminals on the bottom. 9006.
  • FIG. 33D is a perspective view showing a wristwatch-type mobile information terminal 9200.
  • the mobile information terminal 9200 can be used as a smart watch (registered trademark), for example.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • the mobile information terminal 9200 can also make hands-free calls by mutual communication with a headset capable of wireless communication, for example.
  • the portable information terminal 9200 can transmit data to and from another information terminal through the connection terminal 9006, and can be charged. Note that the charging operation may be performed by wireless power supply.
  • FIG. 33E to 33G are perspective views showing a foldable personal digital assistant 9201.
  • FIG. 33E is a state in which the portable information terminal 9201 is unfolded
  • FIG. 33G is a state in which it is folded
  • FIG. 33F is a perspective view in the middle of changing from one of FIGS. 33E and 33G to the other.
  • the portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055 .
  • the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.
  • Example 1 In this example, a display device was manufactured by the method shown in FIGS. 10A to 17B, and the results of observation will be described.
  • an OS transistor was formed on a silicon substrate as a layer 101 including a transistor.
  • an insulating layer 255c was formed over the layer 101 including transistors.
  • the insulating layer 255c is a silicon oxide film formed by PECVD.
  • pixel electrodes 111R, 111G, and 111B were formed on the insulating layer 255c.
  • the pixel electrodes 111R, 111G, and 111B have the same structure as the pixel electrode 111R shown in FIG. 4C. That is, the pixel electrodes 111R, 111G, and 111B cover the conductive layer 111a, the conductive layer 111b over the conductive layer 111a, the conductive layer 111c over the conductive layer 111b, the conductive layers 111a, 111b, and 111c, and the insulating layer 192. and a conductive layer 111d provided.
  • An insulating layer 192 is provided on the side surface of the conductive layer 111b.
  • the conductive layer 111a is a titanium film with a film thickness of 50 nm formed by DC sputtering.
  • the conductive layer 111b is an aluminum film with a film thickness of 70 nm formed by a DC sputtering method.
  • the conductive layer 111c is a titanium oxide film with a thickness of 6 nm.
  • the conductive layer 111c was formed by heating a titanium film formed by a DC sputtering method in an air atmosphere.
  • the insulating layer 192 is a silicon oxynitride film formed by plasma CVD. The insulating layer 192 was formed in a sidewall shape on the side surface of the conductive layer 111b by performing dry etching treatment after film formation.
  • the conductive layer 111d is an indium tin oxide film containing silicon with a thickness of 10 nm.
  • the conductive layer 111d was formed by a DC sputtering method using an indium tin oxide target containing 5 wt % of silicon oxide.
  • an island-shaped layer 113B, a sacrificial layer 118B on the layer 113B, and a sacrificial layer 119B on the sacrificial layer 118B are formed over the pixel electrode 111B. bottom.
  • the layer 113B, the sacrificial layer 118B, and the sacrificial layer 119B were formed using a photolithographic method.
  • the layer 113B is an EL layer made of an organic compound with a film thickness of 176 nm, and is laminated in order of a hole injection layer, a hole transport layer, a blue light emitting layer, and an electron transport layer.
  • the sacrificial layer 118B is a 30 nm-thickness aluminum oxide film deposited by the ALD method.
  • the sacrificial layer 119B is a tungsten film with a film thickness of 54 nm formed by DC sputtering. Sacrificial layer 119B functions as a hard mask when forming sacrificial layer 118B and layer 113B.
  • an island-shaped layer 113G, a sacrificial layer 118G on the layer 113G, and a sacrificial layer 119G on the sacrificial layer 118G are formed covering the pixel electrode 111G. bottom.
  • the layer 113G, the sacrificial layer 118G, and the sacrificial layer 119G were formed using a photolithography method.
  • the layer 113G is an EL layer made of an organic compound with a thickness of 85 nm, and is laminated in order of a hole injection layer, a hole transport layer, a green light emitting layer, and an electron transport layer.
  • the sacrificial layer 118G and the sacrificial layer 119G have the same structure as the sacrificial layer 118B and the sacrificial layer 119B.
  • an island-shaped layer 113R, a sacrificial layer 118R on the layer 113R, and a sacrificial layer 119R on the sacrificial layer 118R are formed covering the pixel electrode 111R. bottom.
  • the layer 113R, the sacrificial layer 118R, and the sacrificial layer 119R were formed using photolithography.
  • the layer 113R is an EL layer made of an organic compound with a film thickness of 115 nm, and is laminated in order of a hole injection layer, a hole transport layer, a red light emitting layer, and an electron transport layer.
  • the sacrificial layer 118R and the sacrificial layer 119R have the same structure as the sacrificial layer 118B and the sacrificial layer 119B.
  • the layers 113R, 113G, and 113B are arranged in the layout shown in FIG. 18A. That is, layer 113R corresponds to subpixel 110a shown in FIG. 18A, layer 113G corresponds to subpixel 110b shown in FIG. 18A, and layer 113B corresponds to subpixel 110c shown in FIG. 18A.
  • the sacrificial layers 119B, 119G, and 119R were removed using a dry etching method.
  • an insulating film 125A was formed to cover the sacrificial layers 119R, 119G, 119B and the insulating layer 255c.
  • the insulating film 125A is a 15 nm-thickness aluminum oxide film formed by the ALD method.
  • an insulating film 127a was applied on the insulating film 125A.
  • the insulating film 127a is a positive photosensitive acrylic resin and is applied using a spin coating method.
  • FIG. 14C Exposure processing was performed as shown in FIG. 14C, and development processing was performed as shown in FIG. 15A to form a patterned insulating layer 127b.
  • wet etching is used to remove the insulating film 125A on the conductive layer 123 of the connecting portion 140 and reduce the film thickness of the sacrificial layer 118B.
  • a tetramethylammonium oxide aqueous solution was used as an etchant.
  • a portion of the insulating film 125A and portions of the sacrificial layers 118B, 118G, and 118R were removed using a wet etching method.
  • an etchant an aqueous solution obtained by further diluting 50 ml of a mixed acid chemical solution with 2450 ml of pure water was used.
  • the mixed acid-based chemical solution contains phosphoric acid, hydrofluoric acid, nitric acid, and water, and the concentration of each component is less than 5% phosphoric acid, less than 1% hydrofluoric acid, less than 10% nitric acid, Water was 62% or more.
  • the concentrations of phosphoric acid, hydrofluoric acid, and nitric acid in the etchant diluted with pure water were 1% or less.
  • the wet etching treatment was performed with an etchant temperature of 24.0° C. and a treatment time of 190 seconds.
  • a portion of the insulating film 125A was removed by wet etching to form the insulating layer 125 .
  • the film thicknesses of some of the sacrificial layers 118B, 118G, and 118R are reduced.
  • post-baking was performed to transform the insulating layer 127b into an insulating layer 127 having tapered side surfaces.
  • Post-baking was performed at a processing temperature of 100° C. for a processing time of 600 seconds.
  • portions of the sacrificial layers 118B, 118G and 118R were removed using a wet etching method to expose the upper surfaces of the layers 113B, 113G and 113R.
  • the same etchant as used in the wet etching process shown in FIG. 15C was used.
  • the wet etching process shown in FIG. 15E was performed with an etchant temperature of 24.0° C. and a processing time of 240 seconds.
  • planar SEM image of the display device under fabrication was taken using a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • residues of the sacrificial layers 118R, 118G, and 118B are not found in the regions of the layers 113R, 113G, and 113B exposed from the insulating layer 127.
  • the upper surfaces of the layers 113R, 113G, and 113B are exposed by removing the residues of the sacrificial layers 118R, 118G, and 118B, thereby preventing pixel defects from being formed in the display device. can be done. Therefore, it is possible to improve the display quality of the display device.
  • a common layer 114, a common electrode 115, and a protective layer 131 were formed in this order, covering the insulating layer 127 and the layers 113B, 113G, and 113R.
  • the common layer 114, the common electrode 115, and the protective layer 131 were formed using an evaporation method.
  • the common layer 114 is a 2-nm-thick film obtained by co-depositing ytterbium and lithium fluoride, and functions as an electron injection layer.
  • the common electrode 115 is an alloy film of silver and magnesium with a film thickness of 25 nm.
  • the protective layer 131 is an ITO film with a thickness of 7 nm.
  • a cross-sectional STEM image of the display device manufactured as described above was taken using a scanning transmission electron microscope (STEM).
  • a cross-sectional STEM image of the display device was taken using Hitachi High-Tech's "HD-2700" at an acceleration voltage of 200 kV.
  • the insulating layer 127 shown in FIG. 35A and the insulating layer 127 shown in FIG. 36A are arranged at positions facing each other with the layer 113R and the pixel electrode 111R interposed therebetween. That is, the layer 113R and the pixel electrode 111R on the right side of FIG. 35A and the layer 113R and the pixel electrode 111R on the left side of FIG. 36A are the same layer and pixel electrode.
  • 35A and 36B respectively, an auxiliary line indicating the boundary between the insulating layer 127 and the layer 113G, an auxiliary line indicating the boundary between the insulating layer 127 and the layer 113R, and the insulating layer 127 and the insulating layer 125 and an auxiliary line indicating the boundary between the insulating layer 125 and the insulating layer 255c.
  • the insulating layer 127 is in contact with the top and side surfaces of the layer 113G and the top and side surfaces of the layer 113R.
  • An insulating layer 125 is formed between the insulating layer 127 and the insulating layer 255c. Comparing with FIG. 15A, it can be seen that most of the insulating film 125A and the sacrificial layers 118G and 118R located under the insulating layer 127 have been removed. Also in FIGS. 36A and 36B, most of the insulating film 125A and the sacrificial layer 118G are removed, but part of the sacrificial layer 118R is formed on the layer 113R.
  • the wet etching treatment is performed for a sufficient amount of time so that residues of the sacrificial layers 118R, 118G, and 118B are not formed in the light emitting region. rice field. At this time, it is presumed that the side etching progressed to the portions of the sacrificial layers 118R, 118G, and 118B and the insulating film 125A under the insulating layer 127.
  • the contact area between the insulating layer 127 and the layers 113R, 113G, 113B increases.
  • the insulating layer 127 and the layers 113R, 113G, and 113B are all organic compounds and have good adhesion. Therefore, the risk that the insulating layer 127 formed over the layers 113R, 113G, and 113B will peel off can be reduced, so that the display quality of the display device can be improved.
  • 11B sub-pixel, 11G: sub-pixel, 11R: sub-pixel, 11S: sub-pixel, 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100F: display device, 100G: display device, 100H: display device, 100J: display device, 100: display device, 101: layer, 110a: subpixel, 110b: subpixel, 110c: subpixel, 110d: subpixel, 110e: subpixel, 110 : pixel 111a: conductive layer 111b: conductive layer 111B: pixel electrode 111c: conductive layer 111d: conductive layer 111G: pixel electrode 111R: pixel electrode 111S: pixel electrode 111: pixel electrode 112B: Conductive layer, 112G: Conductive layer, 112R: Conductive layer, 112S: Conductive layer, 113B: Layer, 113b: Film, 113G: Layer, 113g: Film, 113R: Layer, 113r: Film

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