WO2023141764A1 - 发光模组和显示装置 - Google Patents

发光模组和显示装置 Download PDF

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Publication number
WO2023141764A1
WO2023141764A1 PCT/CN2022/073810 CN2022073810W WO2023141764A1 WO 2023141764 A1 WO2023141764 A1 WO 2023141764A1 CN 2022073810 W CN2022073810 W CN 2022073810W WO 2023141764 A1 WO2023141764 A1 WO 2023141764A1
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WO
WIPO (PCT)
Prior art keywords
light
wiring
sub
emitting
emitting element
Prior art date
Application number
PCT/CN2022/073810
Other languages
English (en)
French (fr)
Inventor
洪崇得
时军朋
林振端
邱亚新
曾志洋
程建超
陈清河
徐宸科
Original Assignee
泉州三安半导体科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 泉州三安半导体科技有限公司 filed Critical 泉州三安半导体科技有限公司
Priority to CN202280001150.7A priority Critical patent/CN117280473A/zh
Priority to PCT/CN2022/073810 priority patent/WO2023141764A1/zh
Publication of WO2023141764A1 publication Critical patent/WO2023141764A1/zh

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Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Definitions

  • the present application relates to the technical field related to semiconductors, in particular to a light emitting module and a display device.
  • light-emitting diodes Due to the characteristics of high reliability, long life, and low power consumption, light-emitting diodes are widely used in many fields such as display devices, vehicle lamps, and general lighting. For example, light-emitting diodes can be used as backlight sources for various display devices. In order to effectively protect the light-emitting diodes mechanically, the light-emitting diodes are often packaged to form a light-emitting module, which can enhance heat dissipation, improve light extraction efficiency, and optimize beam distribution. However, the reliability of the light-emitting module obtained by the existing method is relatively poor, and how to obtain a light-emitting module with high reliability is still a difficult problem.
  • a display device may include: a TFT substrate; and a light-emitting module set on the TFT substrate; wherein, the light-emitting module includes: a plurality of light-emitting elements, and the plurality of light-emitting elements It includes a first light-emitting element that emits a first wavelength, a second light-emitting element that emits a second wavelength, and a third light-emitting element that emits a third wavelength.
  • the voltage of the light-emitting element is greater than or equal to 3V when the rated current is 1 ⁇ A.
  • the light-emitting module may include: multiple groups of light-emitting elements arranged symmetrically in the center, each group including a plurality of light-emitting elements arranged at intervals and having different wavelength ranges; a wiring layer arranged symmetrically in the center, It is formed on the plurality of groups of light-emitting elements, and is used to electrically connect with the light-emitting elements; the conductive pads are arranged symmetrically to the center, and are formed on the side of the wiring layer away from the light-emitting elements, and are connected to the wiring layer layer electrical connection.
  • the light-emitting module may include: multiple groups of light-emitting elements arranged symmetrically in the center, wiring layers, and conductive pads; A plurality of light-emitting elements in the wavelength range; the wiring layer is arranged symmetrically to the center, which is formed on the multiple groups of light-emitting elements, and is used to electrically connect with the light-emitting elements; the conductive pads are arranged symmetrically to the center, and It is formed on the side of the wiring layer away from the light-emitting element, and is electrically connected to the wiring layer; the light-emitting module can overlap with the layout of the light-emitting module before rotation after being rotated by 90° in any direction.
  • FIG. 1 is a plan view of a lighting module shown in the first embodiment of the present application
  • Fig. 2 is a kind of sectional view along A-A ' line in Fig. 1;
  • Fig. 3 is a kind of sectional view along A-A' line in Fig. 1;
  • Fig. 4 is a kind of sectional view along A-A ' line in Fig. 1;
  • Fig. 5 is a plan view of a lighting module shown in the second embodiment of the present application.
  • Fig. 6 is a plan view of a lighting module shown in the third embodiment of the present application.
  • FIG. 7 is a plan view of a first wiring layer shown in the third embodiment of the present application.
  • FIG. 8 is a plan view of a via layer shown in the third embodiment of the present application.
  • FIG. 9 is a plan view of a second wiring layer shown in the third embodiment of the present application.
  • Fig. 10 is a plan view of a light emitting module shown in the fourth embodiment of the present application.
  • Fig. 11 is a plan view of a group of light emitting elements shown in the fourth embodiment of the present application.
  • Fig. 12 is a plan view of a lighting module shown in the fourth embodiment of the present application.
  • Fig. 13 is a plan view of a group of light emitting elements shown in the fourth embodiment of the present application.
  • FIG. 14 is a plan view of a display device shown in the fifth embodiment of the present application.
  • TFT drive circuit 15 is a circuit diagram of a TFT drive circuit
  • Figure 16 is the electrical characteristics of the TFT drive circuit
  • Fig. 17 is a plan view of a lighting module shown in the fifth embodiment of the present application.
  • Fig. 18 is a kind of sectional view along the B-B' line in Fig. 17;
  • Fig. 19 is a schematic cross-sectional view of a light-emitting element according to another embodiment shown in the fifth embodiment of the present application.
  • Fig. 20 is a schematic cross-sectional view of a light emitting element according to another embodiment shown in the fifth embodiment of the present application.
  • orientation or positional relationship indicated by the terms “upper” and “lower” are based on the orientation or positional relationship shown in the attached drawings, or the usual placement of the application product when it is used. Orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.
  • first and “second” etc. are only used for distinguishing descriptions, and should not be construed as indicating or implying relative importance.
  • Fig. 1 is a schematic plan view illustrating a light emitting module according to a first embodiment of the present application
  • Fig. 2 is a schematic cross-sectional view taken along line A-A' of Fig. 1 .
  • the light emitting module includes a plurality of light emitting elements 200 arranged at intervals and having different wavelength ranges, the gaps between adjacent light emitting elements 200 are filled with a filling layer 210, so that the space between adjacent light emitting elements 200 electrically isolated.
  • the wiring layer 300 is formed on the plurality of light emitting elements 200 and is used for electrical connection with the light emitting elements 200 .
  • the conductive pad 500 is formed on a side of the wiring layer 300 away from the light emitting element 200 , and is electrically connected to the light emitting element 200 through the wiring layer 300 .
  • the light-emitting element 200 mainly refers to a micron-scale light-emitting diode, and its width and length range from 2 to 5 ⁇ m, 5 to 10 ⁇ m, 10 to 20 ⁇ m, 20 to 50 ⁇ m or 50 to 100 ⁇ m, and its thickness ranges to 2 to 15 ⁇ m, preferably 5 to 10 ⁇ m.
  • the light emitting module includes a first light emitting element 201 , a second light emitting element 202 and a third light emitting element 203 .
  • each light-emitting element 200 includes a semiconductor stack layer, and the semiconductor stack layer may include a first semiconductor layer, a second semiconductor layer, and an active layer disposed therebetween, wherein the first semiconductor layer is The N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, and the active layer is a multi-layer quantum well layer, which can provide red light, green light or blue light radiation.
  • the N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only the basic constituent units of the light-emitting element 200.
  • the light-emitting element 200 can also include other functional structural layers that can optimize the performance of the light-emitting element 200. .
  • the first light emitting element 201, the second light emitting element 202 and the third light emitting element 203 respectively radiate light in different wavelength ranges, for example, the first light emitting element 201 radiates blue light, the second light emitting element 202 radiates green light, and the third light emitting element 203 Radiates red light.
  • different light-emitting elements 200 may have different semiconductor stack layers, so as to directly radiate light in different wavelength ranges.
  • the specific materials of the semiconductor stack layers are selected according to the wavelength of the radiated light, including but not limited to arsenic Aluminum gallium, gallium arsenide phosphide, indium aluminum gallium phosphide, gallium nitride, indium gallium nitride, zinc selenide, or gallium phosphide.
  • different light emitting elements 200 may have the same semiconductor stack layer, for example, the semiconductor stack layers in the first light emitting element 201, the second light emitting element 202 and the third light emitting element 203 all radiate blue light, and A wavelength conversion layer is provided on the light emitting surface of the second light emitting element 202 to convert the radiated blue light into green light, and a wavelength conversion layer is provided on the light emitting surface of the third light emitting element 203 to convert the radiated blue light into red light.
  • Each light emitting element 200 also includes a first electrode and a second electrode.
  • the semiconductor stack layer has a mesa exposing the first semiconductor layer, the first electrode is formed on the mesa and is electrically connected to the first semiconductor layer, and the second electrode is formed on the second semiconductor layer and is electrically connected to the second semiconductor layer.
  • the thickness difference between the light-emitting elements 200 is less than or equal to 5 ⁇ m, which can effectively improve the transfer yield of the light-emitting module to the transparent layer 100 described later, so as to improve the light-emitting effect of the light-emitting module.
  • the light-emitting module further includes a transparent layer 100, the light-emitting element 200 is disposed on the transparent layer 100, and the side of the transparent layer 100 away from the light-emitting element 200 is the light-emitting surface of the light-emitting module. That is, the light emitted from the light emitting element 200 is emitted to the outside through the transparent layer 100 .
  • the transparent layer 100 has a light transmittance of more than 60% in the range of visible light.
  • the transparent layer 100 includes a first transparent layer 1001 and a second transparent layer 1002 , and the second transparent layer 1002 is located between the first transparent layer 1001 and the light emitting element 200 .
  • the first transparent layer 1001 can be selected from inorganic light-transmitting materials such as glass, transparent ceramics, and sapphire.
  • the light-emitting module needs to have a certain thickness for the client to use, so the thickness of the first transparent layer 1001 is preferably greater than 10 ⁇ m, specifically preferably 30 ⁇ m-50 ⁇ m, 50 ⁇ m-100 ⁇ m or 100 ⁇ m-300 ⁇ m.
  • the second transparent layer 1002 is located between the first transparent layer 1001 and the light emitting element 200 , so that the light emitting element 200 can be adhered to the first transparent layer 1001 through the second transparent layer 1002 .
  • the second transparent layer 1002 can completely cover the entire surface of the first transparent layer 1001, but it is not limited thereto, and can also be located only under the light-emitting element 200, so that the light-emitting element 200 can be adhered to the transparent layer through the second transparent layer 1002 1001.
  • Different light-emitting elements 200 usually have different thicknesses.
  • the second transparent layer 1002 between the first transparent layer 1001 and the light-emitting element 200, the height difference of the light-emitting surface of each light-emitting element 200 is reduced, so that the light emitted from the side of the light-emitting element 200
  • the light is absorbed by the filling layer 210 described below as much as possible, which can improve the contrast of the light emitting module.
  • the thickness of the second transparent layer 1002 is preferably 1 ⁇ m ⁇ 15 ⁇ m or 3 ⁇ m ⁇ 10 ⁇ m. If the thickness of the second transparent layer 1002 is greater than 15 ⁇ m, the alignment accuracy of the light emitting element 200 may be affected.
  • the first transparent layer 1001 can also be selected from low-cost thermosetting organic materials, such as epoxy resin, silica gel, polyimide etc.
  • the first transparent layer 1001 can be formed by dispersing nanoparticles such as zirconium dioxide, silicon oxide, aluminum oxide, boron nitride, etc. in transparent organic materials such as epoxy resin, silica gel, polyimide, etc. , wherein nano-particles such as zirconium dioxide, silicon oxide, aluminum oxide, boron nitride, etc. can increase the strength of the first transparent layer 1001 .
  • the contrast of the light-emitting module can be adjusted by adjusting the content of nanoparticles such as zirconium dioxide, silicon oxide, aluminum oxide, and boron nitride.
  • the first transparent layer 1001 is a thermosetting organic material
  • the second transparent layer 1002 can be ignored.
  • the light-emitting module further includes a filling layer 210, which is filled between adjacent light-emitting elements 200 or around the side walls of the light-emitting elements 200 to prevent the gap between adjacent light-emitting elements 200. Color mixing or light interference between them to improve the contrast of the light-emitting module.
  • the filling layer 210 is provided as a light-absorbing black glue layer.
  • the thickness range of the light-emitting element 200 is preferably 2-15 ⁇ m, and the distance between adjacent light-emitting elements 200 is less than 50 ⁇ m. Therefore, it is preferable to use a material with good fluidity for curing when forming the filling layer 210 .
  • the particle size of the black filling component filled in the filling layer 210 is preferably not greater than 1/10 of the thickness of the light-emitting element 200, which can avoid the filling layer 210 causing the light-emitting element 200 to be damaged due to the excessive particle size of the black filling component.
  • the draping effect is poor, which further affects the contrast of the light-emitting module.
  • the filling layer 210 can specifically be formed by dispersing a black filling component with a particle size not greater than 1 ⁇ m in transparent or translucent materials such as silica gel, epoxy resin, polyimide, low-temperature glass, polysiloxane, polysilazane, etc.
  • the black filling components in the filling layer 210 include but are not limited to carbon black, titanium nitride, iron oxide, ferroferric oxide, iron powder and the like.
  • the particle diameter range of the black filling component is preferably 10-100 nm, or 100-200 nm, or 200-300 nm, or 300 nm-500 nm.
  • the filling layer 210 can also use black dye.
  • the filling layer 210 covers at least 50% of the sidewall of the light-emitting element 200 close to the light-emitting surface, preferably covers the entire sidewall of the light-emitting element 200, which can prevent color mixing or light interference between adjacent light-emitting elements 200, so as to improve the contrast of the light-emitting module .
  • the thickness of the filling layer 210 may be greater than that of the light emitting element 200 , which can prevent light interference caused by light leakage from the bottom of the light emitting element 200 .
  • the thickness of the filling layer 210 is preferably less than 15 ⁇ m.
  • the wiring layer 300 is formed on a plurality of light emitting elements 200 and is used for electrical connection with the light emitting elements 200 .
  • the wiring layer 300 includes several wirings, and the periphery of the wiring layer is filled with an insulating layer 400 to electrically isolate adjacent wirings.
  • the wiring layer 300 includes a first sub-wiring 301, a second sub-wiring 302, a third sub-wiring 303, and a fourth sub-wiring 304, wherein the first sub-wiring 301 serves as a common wiring, the first light-emitting element 201, the second light-emitting element 202 and the first electrode in the third light-emitting element 203 are connected to the first sub-wiring 301, the second electrode in the first light-emitting element 201 is connected to the second sub-wiring 302, and the second electrode in the second light-emitting element 202 The electrodes are connected to the third sub-wiring 303 , and the second electrodes in the third light emitting element 203 are connected to the fourth sub-wiring 304 .
  • the wiring layer 300 may be formed on the filling layer 210 together.
  • the first sub-wiring 301 serves as a common wiring
  • the second electrodes of the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 are commonly connected to the first sub-wiring 301, and the first light-emitting element 201
  • the first electrode of the second light-emitting element 202 is connected to the second sub-wiring 302
  • the first electrode of the second light-emitting element 202 is connected to the third sub-wiring 303
  • the first electrode of the third light-emitting element 203 is connected to the fourth sub-wiring 304.
  • the wiring layer 300 may be formed on the filling layer 210 together.
  • the wiring layer 300 has opposite upper and lower surfaces, wherein the lower surface of the wiring layer 300 is in contact with the filling layer 210 and the light emitting element 200 , and the upper surface of the wiring layer 300 is used to form the insulating layer 400 .
  • the wiring layer 300 may be a single layer or a multilayer made of at least one material among titanium, copper, chromium, nickel, gold, platinum, aluminum, titanium nitride, tantalum nitride or tantalum.
  • the wiring layer 300 may include a first layer 310 and a second layer 320 , the first layer 310 is in direct contact with the light emitting element 200 , and the second layer 320 is formed on the first layer 310 .
  • the first layer 310 is used to adhere the second layer 320 to the light emitting element 200 and the filling layer 210, and the second layer 320 mainly plays a conductive role.
  • the material of the first layer 310 includes but not limited to one or more of titanium, nickel, titanium nitride, tantalum nitride or tantalum, and the material of the second layer 320 includes but not limited to copper, aluminum or gold.
  • the wiring layer 300 can be prepared by sputtering, vapor deposition and the like.
  • the thickness of the wiring layer 300 is preferably 50 nm to 1000 nm, wherein the thickness of the first layer 310 is preferably 10 nm to 200 nm, the thickness of the second layer 320 is preferably 200 nm to 800 nm, and the thickness of the first layer 310 is smaller than that of the second layer 310.
  • the thickness of the second layer 320 is preferably 50 nm to 1000 nm, wherein the thickness of the first layer 310 is preferably 10 nm to 200 nm, the thickness of the second layer 320 is preferably 200 nm to 800 nm, and the thickness of the first layer 310 is smaller than that of the second layer 310.
  • the thickness of the second layer 320 is preferably 50 nm to 1000 nm, wherein the thickness of the first layer 310 is preferably 10 nm to 200 nm, the thickness of the second layer 320 is preferably 200 nm to 800 nm, and the thickness of the first layer 310 is smaller than that of the second
  • the conductive pad 500 is formed on a side of the wiring layer 300 away from the light-emitting element 200 , and is electrically connected to the light-emitting element 200 through the wiring layer 300 .
  • the conductive pad 500 includes a first pad 501, a second pad 502, a third pad 503 and a fourth pad 504, the first pad 501 is used as a common pad, the first light emitting element 201, the second light emitting element 202
  • the first electrode of the third light emitting element 203 is connected to the first pad 501 through the first sub-wiring 301, and the second electrode of the first light-emitting element 201 is connected to the second pad 502 through the second sub-wiring 302.
  • the second electrode in the second light-emitting element 202 is connected to the third pad 503 through the third sub-wiring 303, and the second electrode in the third light-emitting element 203 is connected to the fourth pad 504 through the fourth sub-wiring 304.
  • the first pad 501 serves as a common pad
  • the second electrodes in the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 are commonly connected to the first pad 501 through the first sub-wiring 301
  • the first electrode of the first light-emitting element 201 is connected to the second pad 502 through the second sub-wiring 302
  • the first electrode in the second light-emitting element 202 is connected to the third pad 503 through the third sub-wiring 303
  • the first electrode in the third light emitting element 203 is connected to the fourth pad 504 through the fourth sub-wiring 304 .
  • the conductive pad 500 includes a conductive layer 510
  • the conductive layer 510 can be a single layer or multiple layers made of at least one material among titanium, copper, gold, platinum, etc., and its thickness is preferably 10 ⁇ 50 ⁇ m, such as 20 ⁇ m, 30 ⁇ m, 40 ⁇ m.
  • the conductive pad 500 includes a conductive layer 510 and a protective layer 530 sequentially formed on the wiring layer 300 .
  • the protective layer 530 completely covers the upper surface of the conductive layer 510, which can effectively prevent the conductive layer 510 from being oxidized, and improve the stability of the light-emitting module; when the light-emitting module is installed on the display device , the protective layer 530 will be damaged or removed.
  • the protection layer 530 will not affect the bonding and conductivity of the conductive pad 500 , and its thickness is preferably 25 ⁇ 50 nm.
  • the protective layer 530 can be made of metal materials such as gold and platinum.
  • the conductive pad 500 and the circuit board are welded at a preset temperature with a soldering material.
  • the welding material flows and deforms, and the deformation of the welding material can destroy the integrity of the protective layer 530 made of metal materials such as gold and platinum.
  • the protective layer 530 may be an organic material such as OSP.
  • OSP organic material
  • an adhesive layer 520 is also provided between the conductive layer 510 and the protective layer 530 .
  • the adhesive layer 520 may be a single layer or a multi-layer made of at least one material among chromium, titanium, nickel, tantalum nitride, tantalum, and the like.
  • the thickness of the adhesive layer 520 is preferably 3-5 ⁇ m.
  • the conductive pad 500 includes a conductive layer 510 and a eutectic layer 540 sequentially formed on the wiring layer 300 .
  • the eutectic layer 540 may be a single layer or multiple layers made of at least one material among Sn, SnAg, AuSn, etc., and its thickness is 10-50 nm.
  • the eutectic layer 540 can effectively increase the binding force of the light-emitting module when it is applied to the circuit board, and there is no need to print solder paste again or only need to apply a small amount of solder paste during application, which improves the convenience of the client.
  • an adhesive layer 520 is also provided between the conductive layer 510 and the eutectic layer 540 .
  • the adhesive layer 520 may be a single layer or a multi-layer made of at least one material among chromium, titanium, nickel, tantalum nitride, tantalum, and the like.
  • the thickness of the adhesive layer 520 is preferably 3-5 ⁇ m.
  • a protective layer 530 is further provided on the side of the eutectic layer 540 away from the conductive layer 510 , and the structure of the protective layer 530 is the same as that of the protective layer 530 in the above-mentioned embodiments.
  • the encapsulation layer 600 is filled around the conductive pad 500 to electrically isolate adjacent sub-pads.
  • the encapsulation layer 600 is provided as a light-absorbing adhesive layer, specifically, black filling components are preferably dispersed in transparent or translucent materials such as silica gel, epoxy resin, polyimide, low-temperature glass, polysiloxane, polysilazane, etc.
  • the black filling components in the encapsulation layer 600 include but are not limited to carbon black, titanium nitride, iron oxide, ferroferric oxide, iron powder and the like.
  • the encapsulation layer 600 preferably has a certain thickness to protect the light-emitting element 200 and the wiring layer 300 from damage from external factors, and the thickness of the encapsulation layer 600 is preferably greater than 20 ⁇ m. , the thickness of the conductive pad 500 is also greater than 20 ⁇ m.
  • the encapsulation layer 600 is doped with dopant particles with a particle size greater than 1 ⁇ m, such as silicon dioxide, which can strengthen the mechanical properties of the encapsulation layer 600 , thereby better protecting the light emitting element 200 and the wiring layer 300 .
  • the surface of the packaging layer 600 away from the wiring layer 300 is flush with the surface of the conductive layer 510 in the conductive pad 500 away from the wiring layer 300 .
  • the surface of the encapsulation layer 600 away from the wiring layer 300 is flush with the surface of the eutectic layer 540 in the conductive pad 500 away from the wiring layer 300 , so that the surface of the light emitting module becomes Flatness is conducive to the use of the client.
  • the thickness of the conductive pad 500 is preferably greater than or equal to 5 ⁇ m, and it can be formed by electroplating.
  • the insulating layer 400 is located on the upper surface of the wiring layer 300 and fills the periphery of the wiring in the wiring layer 300 .
  • the insulating layer 400 defines a through hole above the wiring layer 300 for forming the conductive pad 500 .
  • the number of the above-mentioned through holes is the same as the number of the conductive pads 500 , that is to say, one conductive pad 500 corresponds to one through hole.
  • the insulating layer 400 can be a member formed of materials such as epoxy resin, polysiloxane or photoresist, which can prevent the wiring layer 300 from being oxidized, and electrically isolate different wirings to prevent the light-emitting module from being oxidized. There is a phenomenon of leakage failure.
  • a seed layer 700 is provided on the upper surface of the wiring layer 300 , and the seed layer 700 conducts electricity so as to prepare the conductive pad 500 by electroplating.
  • the seed layer 700 may be a single layer or a multi-layer made of at least one material among titanium, copper, gold, and platinum.
  • the seed layer 700 is preferably a Ti/Cu laminate, and its thickness is preferably 100-2000 nm.
  • FIG. 5 is a schematic top view illustrating a light emitting module according to a second embodiment of the present application. The difference from the first embodiment is that the light emitting module includes multiple groups of light emitting elements 200 arranged symmetrically to the center.
  • the light-emitting module includes multiple groups of light-emitting elements 200 arranged symmetrically in the center, and each group includes a plurality of light-emitting elements 200 arranged at intervals and having different wavelength ranges, and the gaps between adjacent light-emitting elements 200 are filled with fillers.
  • layer 210 to electrically isolate adjacent light emitting elements 200 .
  • the wiring layer 300 is center-symmetrically arranged, formed on multiple groups of light emitting elements 200 , and used for electrical connection with the light emitting elements 200 .
  • the conductive pads 500 are arranged symmetrically to the center, are formed on the side of the wiring layer 300 away from the light emitting element 200 , and are electrically connected to the light emitting element 200 through the wiring layer 300 .
  • the multiple groups of light-emitting elements 200, wiring layers 300, and conductive pads 500 are preferably symmetrical about the center point M of the light-emitting module.
  • the structure of the light-emitting module has good symmetry. After frying the light-emitting module, use When the vibration plate rearranges the light-emitting modules, it is not necessary to judge the horizontal direction of the light-emitting modules, but only needs to judge the vertical direction of the light-emitting modules, which effectively shortens the time required for rearranging the light-emitting modules and greatly improves production efficiency. At the same time, the structure of the vibrating plate can be simplified, reducing the production cost.
  • the light emitting module includes a plurality of pixel units, and each pixel unit corresponds to the aforementioned group of light emitting elements.
  • a plurality of pixel units are arranged in a column according to a first direction X, or arranged in a row according to a second direction Y, and the first direction X is perpendicular to the second direction Y.
  • the arrangement direction of the light emitting elements 200 in each pixel unit is parallel to the arrangement direction of the pixel units.
  • the center points of the light emitting elements 200 in the plurality of pixel units are all preferably on the same axis.
  • the multiple sets of light-emitting elements 200 are symmetrical about an axis extending along a first predetermined direction and passing through the center point M of the light-emitting module, and the first predetermined direction is perpendicular to the arrangement direction of the pixel units.
  • the conductive pad 500 includes m ⁇ (1+n) sub-pads, m is the number of groups of light emitting elements 200, and n is the number of light emitting elements 200 included in each group.
  • the number of groups of light-emitting elements 200 included in the light-emitting module is an even number, and the number of groups of light-emitting elements 200 included in the light-emitting module is preferably two groups, and the number of light-emitting elements 200 included in each group is 3.
  • the arrangement direction of the light emitting elements 200 in each pixel unit is perpendicular to the arrangement direction of the pixel units.
  • Multiple groups of light emitting elements 200 are symmetrical about the central point M of the light emitting module.
  • the conductive pad 500 includes m ⁇ (1+n) sub-pads, m is the number of groups of light emitting elements 200, and n is the number of light emitting elements 200 included in each group.
  • each group of light-emitting elements 200 includes a first light-emitting element 201, a second light-emitting element 202, and a third light-emitting element 203 arranged in sequence, and the first light-emitting element 201 and the third light-emitting element
  • the distance between elements 203 is D
  • the width of the lighting module in the first predetermined direction is P
  • the value of D/P is less than or equal to 0.15, so as to ensure that the lighting module has a consistent color distribution visually.
  • the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 radiate light in different wavelength ranges, for example, the first light-emitting element 201 radiates blue light, and the second light-emitting element 202 radiates green light. light, the third light emitting element 203 radiates red light.
  • the light-emitting module includes two groups of light-emitting elements 200 , and the two groups of light-emitting elements 200 are arranged in a row along the first direction X.
  • Each group of light-emitting elements 200 includes a first light-emitting element 201, a second light-emitting element 202, and a third light-emitting element 203 arranged in sequence along the first direction X.
  • the two groups of light-emitting elements 200 extend along the second direction Y and pass through the light-emitting mode.
  • the center points M of the groups are arranged symmetrically about the axis, in other words, in the two groups of light emitting elements 200, the arrangement order of the light emitting elements 200 is reversed.
  • the wiring layers 300 corresponding to the two groups of light emitting elements 200 are symmetrical about the central point M of the light emitting module.
  • the wiring layer 300 corresponding to each group of light-emitting elements 200 includes a first sub-wiring 301, a second sub-wiring 302, a third sub-wiring 303, and a fourth sub-wiring 304, wherein the first sub-wiring 301 serves as a common wiring, and the first light emitting
  • the first electrodes of the element 201, the second light emitting element 202 and the third light emitting element 203 are commonly connected to the first sub-wiring 301, the second electrodes of the first light emitting element 201 are connected to the second sub-wiring 302, and the second electrode of the first light emitting element 201 is connected to the second sub-wiring 302.
  • the second electrode in the second light-emitting element 202 is connected to the third sub-wiring 303
  • the second electrode in the third light-emitting element 203 is connected to the fourth sub
  • the first sub-wiring 301 serves as a common wiring
  • the second electrodes of the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 are commonly connected to the first sub-wiring 301, and the first light-emitting element 201
  • the first electrode of the second light-emitting element 202 is connected to the second sub-wiring 302
  • the first electrode of the second light-emitting element 202 is connected to the third sub-wiring 303
  • the first electrode of the third light-emitting element 203 is connected to the fourth sub-wiring 304.
  • the above two sub-wirings that should be center-symmetrical may have the same or different shapes.
  • the shapes and layout methods of all the above-mentioned sub-wirings are symmetrical with respect to the center point M of the light emitting module.
  • the layout of all the above-mentioned sub-wirings is symmetrical with respect to the center point M of the light emitting module.
  • the conductive pads 500 corresponding to the two groups of light emitting elements 200 are symmetrical about the central point M of the light emitting module.
  • the conductive pads 500 corresponding to each group of light-emitting elements 200 include a first pad 501, a second pad 502, a third pad 503, and a fourth pad 504, the first pad 501 is used as a common pad, and the first pad 501
  • the first electrodes of the element 201, the second light-emitting element 202 and the third light-emitting element 203 are commonly connected to the first pad 501 through the first sub-wiring 301, and the second electrodes of the first light-emitting element 201 are connected to the first pad 501 through the second sub-wiring 302 is connected to the second pad 502, the second electrode in the second light-emitting element 202 is connected to the third pad 503 through the third sub-wiring 303, and the second electrode in the third light-emitting element 203 is connected to the third pad 503 through the fourth sub-wiring
  • the first pad 501 serves as a common pad
  • the second electrodes in the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 are commonly connected to the first pad 501 through the first sub-wiring 301
  • the first electrode of the first light-emitting element 201 is connected to the second pad 502 through the second sub-wiring 302
  • the first electrode in the second light-emitting element 202 is connected to the third pad 503 through the third sub-wiring 303
  • the first electrode in the third light emitting element 203 is connected to the fourth pad 504 through the fourth sub-wiring 304 .
  • the above-mentioned two sub-pads that should be center-symmetrical may have the same or different shapes.
  • the shapes and layout of all the above-mentioned sub-pads are symmetrical with respect to the central point M of the light-emitting module.
  • the layout of all the above-mentioned sub-pads is symmetrical with respect to the central point M of the light-emitting module.
  • FIG. 6 is a schematic top view illustrating a light emitting module according to a third embodiment of the present application. The difference from the first embodiment is that the light emitting module includes multiple groups of light emitting elements 200 arranged symmetrically to the center.
  • the light-emitting module includes multiple groups of light-emitting elements 200 arranged symmetrically in the center, and each group includes a plurality of light-emitting elements 200 arranged at intervals and having different wavelength ranges, and the gaps between adjacent light-emitting elements 200 are filled with fillers.
  • layer 210 to electrically isolate adjacent light emitting elements 200 .
  • the wiring layer 300 is center-symmetrically arranged, formed on multiple groups of light emitting elements 200 , and used for electrical connection with the light emitting elements 200 .
  • the conductive pads 500 are arranged symmetrically to the center, are formed on the side of the wiring layer 300 away from the light emitting element 200 , and are electrically connected to the light emitting element 200 through the wiring layer 300 .
  • the multiple groups of light emitting elements 200, wiring layers 300, and conductive pads 500 are preferably symmetrical about the central point M of the light emitting module.
  • the structure of the light-emitting module has good symmetry. After frying the light-emitting module, use When the vibration plate rearranges the light-emitting modules, it is not necessary to judge the horizontal direction of the light-emitting modules, but only needs to judge the vertical direction of the light-emitting modules, which effectively shortens the time required for rearranging the light-emitting modules and greatly improves production efficiency. At the same time, the structure of the vibrating plate can be simplified, reducing the production cost.
  • the light emitting module includes a plurality of pixel units, and each pixel unit corresponds to the aforementioned group of light emitting elements.
  • a plurality of pixel units are arranged in a column according to a first direction X, or arranged in a row according to a second direction Y, and the first direction X is perpendicular to the second direction Y.
  • the arrangement direction of the light emitting elements 200 in each pixel unit is perpendicular to the arrangement direction of the pixel units.
  • the center points of the light emitting elements 200 in the plurality of pixel units are all preferably on the same axis. Multiple groups of light emitting elements 200 are symmetrical about the central point M of the light emitting module.
  • the conductive pad 500 includes 2 m+1 sub-pads, where m is the number of groups of light emitting elements 200 .
  • the central area of the light emitting module is preferably provided with a sub-pad.
  • the number of groups of light-emitting elements 200 included in the light-emitting module is an even number, and the number of groups of light-emitting elements 200 included in the light-emitting module is preferably two groups, and the number of light-emitting elements 200 included in each group is 3.
  • each group of light emitting elements 200 includes a first light emitting element 201, a second light emitting element 202 and a third light emitting element 203 arranged in sequence, and the first light emitting element 201 and the third light emitting element
  • the distance between the elements 203 is D
  • the width of the light-emitting module in the direction perpendicular to the arrangement direction of the pixel units is P
  • the value of D/P is less than or equal to 0.15, so as to ensure that the light-emitting module has a consistent color distribution visually sex.
  • the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 radiate light in different wavelength ranges, for example, the first light-emitting element 201 radiates blue light, and the second light-emitting element 202 radiates green light. light, the third light emitting element 203 radiates red light.
  • the light-emitting module includes two groups of light-emitting elements 200 , and the two groups of light-emitting elements 200 are arranged in a row along the first direction X.
  • Each group of light-emitting elements 200 includes a first light-emitting element 201, a second light-emitting element 202, and a third light-emitting element 203 arranged in sequence along the second direction Y, and the two groups of light-emitting elements 200 are symmetrically arranged about the center point M of the light-emitting module, In other words, in the two groups of light emitting elements 200, the arrangement order of the light emitting elements 200 is reversed.
  • the wiring layers 300 corresponding to the two groups of light emitting elements 200 are symmetrical about the central point M of the light emitting module.
  • the wiring layer 300 includes a first wiring layer, a via layer, and a second wiring layer.
  • the wiring diagram of the first wiring layer is shown in FIG. 7
  • the schematic diagram of the via layer is shown in FIG. 8
  • the wiring diagram of the second wiring layer is shown in FIG. Figure 9 shows.
  • the first wiring layer includes a first sub-wiring 301 , a second sub-wiring 302 , a third sub-wiring 303 , a fourth sub-wiring 304 and a fifth sub-wiring 305 .
  • the first sub-wiring 301 and the third sub-wiring 303 are symmetrical about the center point M of the light-emitting module
  • the second sub-wiring 302 and the fourth sub-wiring 304 are symmetrical about the center point M of the light-emitting module
  • the fifth sub-wiring 305 is about The central point M of the lighting module is symmetrical.
  • the first electrode of the first light-emitting element 201 in the first group of light-emitting elements, the first electrode of the second light-emitting element 202, and the second electrode of the third light-emitting element 203 in the second group of light-emitting elements are commonly connected to the first sub-wiring 301;
  • the first electrode of the third light emitting element 203 in the first group of light emitting elements is connected to the second sub-wiring 302;
  • the first electrodes of the first light-emitting element 201 and the second light-emitting element 202 are commonly connected to the third sub-wiring 303;
  • the first electrodes of the third light-emitting element 203 in the second group of light-emitting elements are connected to the fourth sub-wiring 304;
  • the via layer includes several via holes 3001 , and specifically includes the first sub-wiring 301 , the second sub-wiring 302 , the third sub-wiring 303 , the fourth sub-wiring 304 and the fifth sub-wiring 305 .
  • the second wiring layer includes a sixth sub-wiring 306 and a seventh sub-wiring 307 , and the sixth sub-wiring 306 and the seventh sub-wiring 307 are symmetrical about the central point M of the light emitting module.
  • the sixth sub-wiring 306 and the seventh sub-wiring 307 are respectively used to connect to the second electrode of the first light-emitting element 201 in the two groups of light-emitting elements.
  • the second wiring layer further includes a plurality of interconnection sub-wirings 308, and the plurality of interconnection sub-wirings 308 are symmetrical about the central point M of the light emitting module.
  • a plurality of interconnection sub-wirings 308 are respectively formed in through holes above the first sub-wiring 301, the second sub-wiring 302, the third sub-wiring 303, the fourth sub-wiring 304, and the fifth sub-wiring 305, and are connected to the first sub-wiring respectively.
  • the sub-wiring 301, the second sub-wiring 302, the third sub-wiring 303, the fourth sub-wiring 304, and the fifth sub-wiring 305 are connected to connect the first sub-wiring 301, the second sub-wiring 302, the third sub-wiring 303, the The fourth sub-wiring 304 and the fifth sub-wiring 305 lead out.
  • the above two sub-wirings that should be center-symmetrical may have the same or different shapes.
  • the shapes and layout methods of all the above-mentioned sub-wirings are symmetrical with respect to the center point M of the light emitting module.
  • the layout of all the above-mentioned sub-wirings is symmetrical with respect to the center point M of the light emitting module.
  • the conductive pads 500 corresponding to the two groups of light emitting elements 200 are symmetrical about the central point M of the light emitting module.
  • the conductive pad 500 includes a first pad 501, a second pad 502, a third pad 503, a fourth pad 504 and a fifth pad 505.
  • the first pad 501 is electrically connected to the first sub-wiring 301;
  • the second pad 502 is electrically connected to the second sub-wiring 302 and the sixth sub-wiring 306;
  • the third pad 503 is electrically connected to the third sub-wiring 303.
  • the fourth sub-pad 504 is electrically connected to the fourth sub-wiring 304 and the seventh sub-wiring 307;
  • the fifth pad 505 is electrically connected to the fifth sub-wiring 305.
  • the first sub-wiring 301 , the second sub-wiring 302 , the third sub-wiring 303 , the fourth sub-wiring 304 and the fifth sub-wiring 305 are respectively connected to their corresponding sub-pads through the interconnecting sub-wiring 308 .
  • the above-mentioned two sub-pads that should be center-symmetrical may have the same or different shapes.
  • the shapes and layout of all the above-mentioned sub-pads are symmetrical with respect to the central point M of the light-emitting module.
  • the layout of all the above-mentioned sub-pads is symmetrical with respect to the central point M of the light-emitting module.
  • FIG. 10 and FIG. 12 are schematic top views for illustrating the light emitting module according to the fourth embodiment of the present application.
  • the difference from the first embodiment is that the light emitting module includes multiple groups of light emitting elements 200 arranged symmetrically to the center.
  • the light-emitting module includes multiple groups of light-emitting elements 200 arranged symmetrically in the center, each group includes a plurality of light-emitting elements 200 arranged at intervals and having different wavelength ranges, and the gap between adjacent light-emitting elements 200
  • the filling layer 210 is filled to electrically isolate adjacent light emitting elements 200 .
  • the wiring layer 300 is center-symmetrically arranged, formed on multiple groups of light emitting elements 200 , and used for electrical connection with the light emitting elements 200 .
  • the conductive pads 500 are arranged symmetrically to the center, are formed on the side of the wiring layer 300 away from the light emitting element 200 , and are electrically connected to the light emitting element 200 through the wiring layer 300 .
  • the multiple groups of light-emitting elements 200, wiring layers 300, and conductive pads 500 are preferably symmetrical about the center point M of the light-emitting module.
  • the structure of the light-emitting module has good symmetry. After frying the light-emitting module, use When the vibration plate rearranges the light-emitting modules, it is not necessary to judge the horizontal direction of the light-emitting modules, but only needs to judge the vertical direction of the light-emitting modules, which effectively shortens the time required for rearranging the light-emitting modules and greatly improves production efficiency. At the same time, the structure of the vibrating plate can be simplified, reducing the production cost.
  • the light-emitting module includes a plurality of pixel units, and each pixel unit corresponds to the above-mentioned group of light-emitting elements.
  • a plurality of pixel units are arranged in columns according to the first direction X, and arranged in rows according to the second direction Y, and the first direction X is perpendicular to the second direction Y.
  • the width of the light-emitting module in the first direction X and the second direction Y is preferably less than or equal to 3 mm, further less than or equal to 2 mm or 1.6 mm, and the width of the light-emitting element 200 in the first direction X and the second direction Y is preferably is less than or equal to 100 ⁇ m.
  • the arrangement directions of the light emitting elements 200 in the two pixel units are vertical, that is, the light emitting elements 200 in one pixel unit are arranged along the first direction X, and the light emitting elements 200 in the other pixel unit are arranged along the first direction X.
  • Arranged along the second direction Y; the center points of the light emitting elements 200 in the two pixel units are preferably on the same axis. It should be noted that the above two adjacent pixel units may refer to two adjacent pixel units in the first direction X, or may refer to two adjacent pixel units in the second direction Y.
  • the conductive pad 500 includes 1+m ⁇ n sub-pads, m is the number of groups of light emitting elements 200, and n is the number of light emitting elements 200 included in each group.
  • the number of groups of light emitting elements 200 included in the light emitting module is preferably four groups, and the number of light emitting elements 200 included in each group is three.
  • each group of light emitting elements 200 includes a first light emitting element 201, a second light emitting element 202 and a third light emitting element 203 arranged in sequence, and the first light emitting element 201 and the third light emitting element 203 are arranged sequentially.
  • the distance between the third light-emitting elements 203 is D
  • the width of the light-emitting module in the first direction X or the second direction Y is P
  • the value of D/P is less than or equal to 0.15, so as to ensure that the light-emitting module has a visual Consistency in color distribution.
  • the first light-emitting element 201, the second light-emitting element 202, and the third light-emitting element 203 radiate light in different wavelength ranges, for example, the first light-emitting element 201 radiates blue light, and the second light-emitting element 202 radiates green light. light, the third light emitting element 203 radiates red light.
  • the conductive pad 500 includes a common pad 5001 and several independent pads, the common pad 5001 is preferably set in the central area of the light-emitting module, and the independent pads The number corresponds to the number of light emitting elements 200 .
  • the above-mentioned common pad 5001 is an anode pad, and the anodes in all light-emitting elements 200 are commonly connected to the common pad 5001, and the cathodes in each light-emitting element 200 are respectively connected to the corresponding independent pads; or, the above-mentioned common
  • the pad 5001 is a cathode pad, and the cathodes of all light emitting elements 200 are commonly connected to the common pad 5001 , and the anodes of each light emitting element 200 are respectively connected to the corresponding independent pads.
  • This common anode/cathode connection method can make the light-emitting module with small pixel pitches have more space for wiring design, and through the above-mentioned common anode/cathode connection method, four groups of light-emitting elements 200 can be assembled in one together to form a four-in-one lighting module. Any rotation of the above-mentioned light-emitting module by 90° can overlap with the layout of the light-emitting module before rotation, which can improve the alignment accuracy of the light-emitting module during transfer and alignment, and reduce the difficulty of alignment.
  • the independent pads are not located above the light-emitting element 200, and the distance between the common pad 5001 and the independent pads not located above the light-emitting element in the first direction X and the second direction Y is Both widths are preferably 120 ⁇ m to 200 ⁇ m. In this embodiment, all independent pads are not located above the light emitting element 200 .
  • the independent pads are located above the light-emitting element 200, and the widths of the common pad 5001 and the independent pads located above the light-emitting element in the first direction X and the second direction Y are the same. Preferably, it is 200 ⁇ m to 300 ⁇ m. In this embodiment, the independent pads are located above the light emitting element 200 . When the independent pad is located above the light-emitting element 200, the design width of the common pad 5001 and the independent pad can be made larger, and the overall width of the light-emitting module can be designed to be smaller.
  • the light-emitting module includes four groups of light-emitting elements 200 , and the four groups of light-emitting elements 200 are arranged in two columns in the first direction X and in two rows in the second direction Y.
  • the group of light-emitting elements in the first row and first column is abbreviated as D11
  • the group of light-emitting elements in the first row and second column is abbreviated as D12
  • the group of light-emitting elements in the second row and first column is abbreviated as D21
  • the group of light emitting elements in the second row and second column is abbreviated as D22.
  • the arrangement directions of the light emitting elements 200 in D11 and D22 are parallel to each other, and the arrangement directions of the light emitting elements 200 in D12 and D21 are parallel to each other and perpendicular to the arrangement directions of the light emitting elements 200 in D11 and D22.
  • the light emitting elements 200 in D11 and D22 are arranged along the first direction X, and the light emitting elements 200 in D12 and D21 are arranged along the second direction Y.
  • the four groups of light emitting elements 200 are arranged symmetrically with respect to the central point M of the light emitting module.
  • the wiring layers 300 corresponding to the four groups of light emitting elements 200 are symmetrical about the central point M of the light emitting module.
  • the wiring layer 300 corresponding to each group of light-emitting elements 200 is shown in FIG.
  • the cathode of the first light-emitting element 201 is connected to the fourth sub-wiring 304, the cathode of the second light-emitting element 202 is connected to the fifth sub-wiring 305, and the cathode of the third light-emitting element 203 is connected to the sixth sub-wiring 306 on.
  • the above two sub-wirings that should be center-symmetrical may have the same or different shapes.
  • the shapes and layout methods of all the above-mentioned sub-wirings are symmetrical with respect to the center point M of the light emitting module.
  • the layout of all the above-mentioned sub-wirings is symmetrical with respect to the center point M of the light emitting module.
  • the conductive pads 500 corresponding to the four groups of light emitting elements 200 are symmetrical about the central point M of the light emitting module.
  • the conductive pads 500 corresponding to each group of light-emitting elements 200 are shown in FIG. 201, the anodes in the second light-emitting element 202 and the third light-emitting element 203 are connected to the common pad 5001 through the first sub-wiring 301, the second sub-wiring 302, and the third sub-wiring 303 respectively, and the first light-emitting element 201
  • the cathode of the second light-emitting element 202 is connected to the first independent pad 5002 through the fourth sub-wiring 304, the cathode in the second light-emitting element 202 is connected to the second independent pad 5003 through the fifth sub-wiring 305, and the cathode in the third light-emitting element 203 It is connected to the third independent pad 5004 through the sixth sub-wiring 306 .
  • the above-mentioned two sub-pads that should be center-symmetrical may have the same or different shapes.
  • the shapes and layout of all the above-mentioned sub-pads are symmetrical with respect to the central point M of the light-emitting module.
  • the layout of all the above-mentioned sub-pads is symmetrical with respect to the central point M of the light-emitting module.
  • FIG. 14 is a schematic plan view for explaining a display device according to a fifth embodiment of the present application.
  • a display device 10000 includes a TFT substrate 11000 and a plurality of light emitting modules 1000 disposed on the TFT substrate 11000 .
  • the light emitting modules 100 are arranged on the TFT substrate 11000 in a matrix form of rows and columns, and are electrically connected to the TFT substrate 11000 respectively.
  • the TFT substrate 11000 includes a TFT driving circuit, and the TFT driving circuit is arranged to drive the light emitting module 1000 in an active matrix manner.
  • the light emitting module 1000 can be driven to emit light of corresponding colors through the TFT substrate 11000 .
  • the PTFT will be much larger than the PLED , and the PTFT is about 3-4 times that of the PLED under the same current.
  • the function of the TFT driving circuit is to control the switching of the light-emitting module, which has no direct impact on the display performance, and the power consumed by the TFT driving circuit is an invalid power loss.
  • Figure 15 is a diagram of the TFT drive circuit
  • Figure 16 is the electrical characteristics of the TFT.
  • the current input is controlled by the input signal at the Data terminal, and the TFT drive circuit works in the constant current region. Therefore, the magnitude of the current I is determined by gate voltage U GS to determine.
  • U GS is reduced, the input current I is also reduced, and PTFT is greatly reduced at this time, so the power consumption of the display device can be greatly reduced.
  • the decrease of the input current I will cause the decrease of P LED , the optoelectronic property of the light-emitting element may be affected, thereby resulting in a decrease in the performance of the display device.
  • a display device 10000 includes a TFT substrate and a plurality of light emitting modules 1000 disposed on a TFT substrate 11000 .
  • the light-emitting module 1000 includes a plurality of light-emitting elements 200 arranged at intervals, and the plurality of light-emitting elements 200 include a first light-emitting element 201 emitting a first wavelength, a second light-emitting element 202 emitting a second wavelength, and a second light-emitting element 202 emitting a third wavelength.
  • Three light emitting elements 203 are examples of the plurality of light-emitting elements 200 arranged at intervals, and the plurality of light-emitting elements 200 include a first light-emitting element 201 emitting a first wavelength, a second light-emitting element 202 emitting a second wavelength, and a second light-emitting element 202 emitting a third wavelength.
  • FIG. 17 is a schematic plan view for illustrating the light emitting module of the fifth embodiment of the present application
  • FIG. 18 is a cross-sectional view along line B-B' in FIG. 17
  • the light emitting module 1000 includes a plurality of light emitting elements 200 arranged at intervals, and the gaps between adjacent light emitting elements 200 are filled with filling layers 210 to electrically isolate adjacent light emitting elements 200
  • the wiring layer 300 is formed on the plurality of light emitting elements 200 and is used for electrical connection with the light emitting elements 200 .
  • the conductive pad 500 is formed on a side of the wiring layer 300 away from the light emitting element 200 , and is electrically connected to the light emitting element 200 through the wiring layer 300 .
  • the plurality of light emitting elements 200 include a first light emitting element 201 emitting a first wavelength, a second light emitting element 202 emitting a second wavelength, and a third light emitting element 203 emitting a third wavelength.
  • the first light emitting element 201 includes a first light emitting diode 2011 and a second light emitting diode 2012 emitting a first wavelength
  • the second light emitting element 202 includes a third light emitting diode 2021 and a fourth light emitting diode 2022 emitting a second wavelength
  • the third light emitting element 203 includes a fifth light emitting diode 2031 and a sixth light emitting diode 2032 emitting a third wavelength.
  • the light emitting diodes emitting the same wavelength are arranged in a first direction
  • the first light emitting element, the second light emitting element and the third light emitting element are arranged in a second direction
  • the first direction and the second direction are substantially perpendicular.
  • the voltage of the light-emitting element 200 in the above-mentioned light-emitting module is greater than or equal to 3V when the rated current is 1 ⁇ A.
  • the reactive power loss of the TFT driving circuit is greatly reduced, which reduces the overall power of the display device and improves the overall service life.
  • the distance X1 between LEDs emitting the same wavelength is preferably less than 50 ⁇ m, and in some display device applications, it may be 40-50 ⁇ m, 30-40 ⁇ m, 20-30 ⁇ m, or 10-20 ⁇ m.
  • the distance X2 between the first light-emitting element, the second light-emitting element, and the third light-emitting element is preferably less than 50 ⁇ m, and in the application of some display devices, for example, it can be 40-50 ⁇ m, 30-40 ⁇ m, 20-30 ⁇ m, or 10- 20 ⁇ m. If the distance between the light-emitting elements is greater than 50 ⁇ m, the display device is prone to ghosting when viewed from a long distance, and the display effect is poor.
  • the light-emitting area of the light-emitting element 200 accounts for less than 30%, preferably less than 15%, or even less than 5%, such as 8.5%, or 2.8%, or 1.125%, or even lower.
  • the wiring layer may include a first sub-wiring 301 , a second sub-wiring 302 , a third sub-wiring 303 , a fourth sub-wiring 304 , a first connection part 3005 , a second connection part 3006 , and a third connection part 3007 .
  • the first sub-wiring 301 serves as a common wiring, the first electrodes of the first light emitting diode 2011, the third light emitting diode 2021, and the fifth light emitting diode 2031 are commonly connected to the first sub-wiring 301, and the second electrode of the first light emitting diode 2011 And the first electrode of the second light emitting diode 2012 is connected to the first connection part 3005, the second electrode of the third light emitting diode 2021 and the first electrode of the fourth light emitting diode 2022 are connected to the second connection part 3006, and the fifth light emitting diode 2031
  • the second electrode of the second light emitting diode 2032 and the first electrode of the sixth light emitting diode 2032 are connected to the third connection part 3007, the second electrode of the second light emitting diode 2012 is connected to the second sub-wiring 302, and the second electrode of the fourth light emitting diode 2022 is connected to To the third sub-wiring 303 , the second electrode of the sixth light emitting di
  • the first light emitting diode 2011 and the second light emitting diode 2012 are connected in series through the first connecting part 3005, the third light emitting diode 2021 and the fourth light emitting diode 2022 are connected in series through the second connecting part 3006, the fifth light emitting diode 2031, the sixth light emitting diode
  • the light emitting diodes 2032 are connected in series through the third connecting portion 3007 .
  • the light emitting diodes emitting the same wavelength are connected in series through the connecting part, so that the voltage of the light emitting element 200 is greater than or equal to 3V when the rated current is 1 ⁇ A; the light emitting diodes connected in series in the light emitting module can increase the voltage of the light emitting element 200 and keep the electric power constant. It can prevent the reduction of the photoelectric efficiency of the light-emitting elements in the light-emitting module due to the reduction of the input current of the display device, thereby affecting the performance of the display device.
  • the light-emitting module includes a plurality of light-emitting elements 200 arranged at intervals, and the plurality of light-emitting elements 200 include a first light-emitting element 201 emitting a first wavelength, a second light-emitting element 202 emitting a second wavelength, and a third light-emitting element emitting a third wavelength 203.
  • FIG. 19 is a schematic cross-sectional view illustrating a first light emitting element 201 according to still another embodiment of the present invention.
  • the first light-emitting element 201 is taken as an example for description, the second light-emitting element 202 and the third light-emitting element 203 also have substantially similar structures, so overlapping descriptions are omitted.
  • the first light emitting element 201 includes a first light emitting diode 2011, a second light emitting diode 2012, and each light emitting diode includes a semiconductor stack layer 20, and the semiconductor stack layer 20 includes a first semiconductor layer 21, an active layer 22 and a second light emitting diode. Two semiconductor layers 23 .
  • the first light-emitting element 201 has a connection electrode 24, and the connection electrode 24 connects the first semiconductor layer 21 of the first light-emitting diode 2011 and the second semiconductor layer 23 of the second light-emitting diode 2012, so that two of the first light-emitting elements 201 emit light.
  • the diodes are connected in series.
  • the first light-emitting element 201 also includes a first electrode 25 and a second electrode 26, the light-emitting diode 2011 has the second electrode 26 formed on the second semiconductor layer 23, and the light-emitting diode 2012 has a second electrode 26 formed on the first semiconductor layer 21. the first electrode 25 .
  • the first light emitting element 201 further includes an insulating protection layer 27 , and part of the insulating protection layer 27 is disposed between a part of the connecting electrode 24 and the first light emitting diode 2011 and the second light emitting diode 2012 .
  • the first light-emitting element 201 includes at least a first light-emitting diode 2011 and a second light-emitting diode 2012.
  • a tunnel junction 35 is formed on the second semiconductor layer of the first light-emitting diode 2011. In the tunnel The first semiconductor layer of the second light emitting diode 2012 is formed above the tunnel junction 35 , and the first light emitting diode 2011 and the second light emitting diode 2012 are connected in series through the tunnel junction 35 .
  • the light emitting diodes emitting the same wavelength are connected in series through the connection electrode 24 or the tunnel junction 35, so that the voltage of the light emitting element 200 is greater than or equal to 3V when the rated current is 1 ⁇ A; the light emitting diodes connected in series in the light emitting module can increase the voltage of the light emitting element 200 , keep the electric power constant, which can avoid the reduction of the photoelectric efficiency of the light-emitting elements in the light-emitting module due to the reduction of the input current of the display device, and further affect the performance of the display device.
  • the wiring layer 300 includes a first sub-wiring 301, a second sub-wiring 302, a third sub-wiring 303, and a fourth sub-wiring 304, wherein the first sub-wiring 301 serves as a common wiring, the first light-emitting element 201, the second light-emitting element 202 and the first electrode in the third light-emitting element 203 are connected to the first sub-wiring 301, the second electrode in the first light-emitting element 201 is connected to the second sub-wiring 302, and the second electrode in the second light-emitting element 202 The electrodes are connected to the third sub-wiring 303 , and the second electrodes in the third light emitting element 203 are connected to the fourth sub-wiring 304 .
  • the number of light-emitting elements that emit different wavelengths in series can be the same or different, for example, the first light-emitting element 201 can include three light-emitting diodes in series, the second light-emitting element 202 and the third light-emitting element It may include two LEDs connected in series, and the invention is not limited thereto.

Abstract

一种显示装置，该显示装置包括TFT基板（11000）；以及发光模组（1000），设置在TFT基板（11000）上；其中，发光模组（1000）包括：多个发光元件（200），多个发光元件（200）包括发射第一波长的第一发光元件（201）、发射第二波长的第二发光元件（202）以及发射第三波长的第三发光元件（203），发光元件（200）在额定电流1μA时，电压大于等于3V。

Description

发光模组和显示装置 技术领域
本申请涉及半导体相关技术领域，尤其涉及一种发光模组和显示装置。
 背景技术
发光二极管由于可靠性高、寿命长、功耗低的特点，广泛应用于显示装置、车辆用灯具、普通照明灯等多个领域，例如，发光二极管可作为各种显示装置的背光光源。为了对发光二极管进行有效的机械保护，常常对发光二极管进行封装并形成发光模组，其能够加强散热性，提高出光效率，优化光束分布。但是，以现有方法所得到的发光模组的可靠性比较差，如何得到一种可靠性高的发光模组仍然是一个难题。
 技术解决方案
根据本申请公开的一实施例的显示装置可以包括：TFT基板；以及发光模组，设置在所述TFT基板上；其中，所述发光模组包括：多个发光元件，所述多个发光元件包括发射第一波长的第一发光元件、发射第二波长的第二发光元件以及发射第三波长的第三发光元件，所述发光元件在额定电流1μA时，电压大于等于3V。
根据本申请公开的又一实施例的发光模组可以包括：多组呈中心对称布置的发光元件，每组包括间隔布置且具有不同波长范围的多个发光元件；布线层，呈中心对称布置，其形成于所述多组发光元件之上，并用于与所述发光元件电连接；导电焊盘，呈中心对称布置，其形成于所述布线层远离发光元件的一侧，并与所述布线层电连接。
根据本申请公开的又一实施例的发光模组可以包括：包括多组呈中心对称布置的发光元件、布线层和导电焊盘；每组发光元件构成一个像素单元，且包括间隔布置且具有不同波长范围的多个发光元件；所述布线层呈中心对称布置，其形成于所述多组发光元件之上，并用于与所述发光元件电连接；所述导电焊盘呈中心对称布置，其形成于所述布线层远离发光元件的一侧，并与所述布线层电连接；所述发光模组按照任意方向旋转90°后均可与未旋转前的所述发光模组的布局重合。
 附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1为本申请中第一实施例所示出的一种发光模组的平面图；
图2为一种沿图1中的A-A’线的剖面图；
图3为一种沿图1中的A-A’线的剖面图；
图4为一种沿图1中的A-A’线的剖面图；
图5为本申请中第二实施例所示出的一种发光模组的平面图；
图6为本申请中第三实施例所示出的一种发光模组的平面图；
图7为本申请中第三实施例所示出的一种第一布线层的平面图；
图8为本申请中第三实施例所示出的一种通孔层的平面图；
图9为本申请中第三实施例所示出的一种第二布线层的平面图；
图10为本申请中第四实施例所示出的一种发光模组的平面图；
图11为本申请中第四实施例所示出的一组发光元件的平面图；
图12为本申请中第四实施例所示出的一种发光模组的平面图；
图13为本申请中第四实施例所示出的一组发光元件的平面图；
图14为本申请中第五实施例所示出的一种显示装置的平面图；
图15为TFT驱动电路的电路图；
图16为TFT驱动电路的电学特性；
图17为本申请中第五实施例所示出的一种发光模组的平面图；
图18为一种沿图17中的B-B’线的剖面图；
图19为本申请中第五实施例所示出的又一实施例的发光元件的示意性的剖视图；
图20为本申请中第五实施例所示出的又一实施例的发光元件的示意性的剖视图。
图示说明：
100 透明层；1001 第一透明层；1002 第二透明层；200 发光元件；201 第一发光元件；202 第二发光元件；203 第三发光元件；210 填充层；300 布线层；301 第一子布线；302 第二子布线；303 第三子布线；304 第四子布线；305第五子布线；306第六子布线；307第七子布线；308互连子布线；310第一层；320第二层；400绝缘层；500 导电焊盘；501 第一焊盘；502 第二焊盘；503 第三焊盘；504第四焊盘；505第五焊盘；5001公共焊盘；5002第一独立焊盘；5003第二独立焊盘；5004第三独立焊盘；510 导电层；520 粘合层；530 保护层；540 共晶层；600 封装层；700 种子层；10000 显示装置；1000 发光模组；11000  TFT基板；2011 第一发光二极管；2012 第二发光二极管；2021 第三发光二极管；2022 第四发光二极管；2031 第五发光二极管；2032 第六发光二极管；3005 第一连接部；3006 第二连接部；3007 第三连接部；20 半导体堆叠层；21 第一半导体层；22有源层；23第二半导体层；24 连接电极；25第一电极；26 第二电极；27 绝缘保护层；35 隧穿结。
 本发明的实施方式
以下通过特定的具体实施例说明本申请的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本申请的其他优点与功效。本申请还可以通过另外不同的具体实施方式加以实施或营业，本申请中的各项细节也可以基于不同观点与应用，在没有背离本申请的精神下进行各种修饰或改变。
在本申请的描述中，需要说明的是，术语“上”和“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该申请产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”和“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
实施例一
图1为用于说明本申请的第一实施例的发光模组的示意性的平面图，图2是沿图1的截取线A‑A’截取的示意性的剖视图。
参见图1和图2，该发光模组包括间隔布置且具有不同波长范围的多个发光元件200，相邻发光元件200之间的间隙填充有填充层210，以使相邻发光元件200之间电性隔离。布线层300形成于多个发光元件200上，并用于与发光元件200电连接。导电焊盘500形成于布线层300远离发光元件200的一侧，并通过布线层300与发光元件200电连接。
在一种实施方式中，发光元件200主要指的是微米级的发光二极管，其宽度和长度的范围为2~5μm、5~10μm、10~20μm、20~50μm或50~100μm，其厚度范围为2~15μm，优选为5~10μm。在本实施例，发光模组包括第一发光元件201、第二发光元件202以及第三发光元件203。
具体地，每个发光元件200均包括半导体堆叠层，半导体堆叠层可以包括顺序排列的第一半导体层、第二半导体层以及设置在两者之间的有源层，其中，第一半导体层为N型半导体层，第二半导体层为P型半导体层，有源层为多层量子阱层，其可提供红光或者绿光或者蓝光的辐射。N型半导体层、多层量子阱层、P型半导体层仅是发光元件200的基本构成单元，在此基础上，发光元件200还可以包括其他对发光元件200的性能具有优化作用的功能结构层。
第一发光元件201、第二发光元件202和第三发光元件203分别辐射不同波长范围的光线，例如第一发光元件201辐射蓝光光线，第二发光元件202辐射绿光光线，第三发光元件203辐射红光光线。在一实施例中，不同的发光元件200可以具有不同的半导体堆叠层，从而直接辐射不同波长范围的光线，半导体堆叠层的具体材料根据辐射光线的波长来选择，其包括但不限于是砷化铝镓、磷砷化镓、磷化铝镓铟、氮化镓、氮化铟镓、硒化锌或磷化镓。在另一实施例中，不同的发光元件200可以具有相同的半导体堆叠层，例如，第一发光元件201、第二发光元件202和第三发光元件203中的半导体堆叠层均辐射蓝光光线，并在第二发光元件202的出光面设置波长转换层将辐射的蓝光光线转换成绿光光线，在第三发光元件203的出光面设置波长转换层将辐射的蓝光光线转换成红光光线。
每个发光元件200还包括第一电极和第二电极。半导体堆叠层具有暴露出第一半导体层的台面，第一电极形成在台面上并与第一半导体层电连接，第二电极形成在第二半导体层上并与第二半导体层电连接。
较佳地，发光元件200之间的厚度差小于等于5μm，可有效提高发光模组转印至后续描述的透明层100上的转印良率，以提高发光模组的出光效果。
在一种实施方式中，参见图1和图2，发光模组还包括透明层100，发光元件200设置在透明层100上，透明层100远离发光元件200的一面为发光模组的出光面，即发光元件200出射的光均通过透明层100向外部出射。透明层100在可见光范围内具有60%以上的透光率。
在一种实施方式中，参见图2，透明层100包括第一透明层1001和第二透明层1002，第二透明层1002位于第一透明层1001和发光元件200之间。
第一透明层1001可选自玻璃、透明陶瓷、蓝宝石等无机透光性材料。较佳地，发光模组需要具有一定的厚度以便于客户端使用，因此第一透明层1001的厚度优选大于10μm，具体优选为30μm~50μm、50μm~100μm或100μm~300μm。
第二透明层1002位于第一透明层1001和发光元件200之间，以使发光元件200可通过第二透明层1002粘附于第一透明层1001上。第二透明层1002可完全覆盖第一透明层1001的整个表面，然而并不局限于此，也可以是仅位于发光元件200下方，使得发光元件200能够通过第二透明层1002粘附于透明层1001。
不同发光元件200通常具有不同的厚度，通过在第一透明层1001和发光元件200之间设置第二透明层1002，减少了各个发光元件200出光面的高度差，使得自发光元件200侧面出射的光尽可能被下文所描述的填充层210吸收，可提高发光模组的对比度。第二透明层1002的厚度优选为1μm~15μm或者3μm~10μm。若第二透明层1002的厚度大于15μm，发光元件200的对位精度可能受到影响。
作为可替换的实施方式，由于蓝宝石等无机透光性材料的成本较高，且制备工艺复杂，第一透明层1001也可选自成本较低的热固性的有机材料，例如环氧树脂、硅胶、聚酰亚胺等。在一实施例中，第一透明层1001可为由二氧化锆、氧化硅、氧化铝、氮化硼等纳米粒子分散于环氧树脂、硅胶、聚酰亚胺等透光性有机材料而形成的构件，其中，二氧化锆、氧化硅、氧化铝、氮化硼等纳米粒子可提高第一透明层1001的强度。另外，通过调节二氧化锆、氧化硅、氧化铝、氮化硼等纳米粒子的含量可调整发光模组的对比度。在一实施例中，第一透明层1001为热固性的有机材料时，第二透明层1002可忽略。
在一个实施方式中，参见图1和图2，发光模组还包括填充层210，填充层210填充于相邻发光元件200之间或者发光元件200侧壁周围，可防止相邻发光元件200之间的混色或者光干涉，以提高发光模组的对比度。填充层210被提供为吸收光的黑色胶层。
发光元件200的厚度范围优选为2~15μm，且相邻发光元件200之间的间距小于50μm，因此，在形成填充层210时优选采用具有良好的流动性的材料进行固化。填充于填充层210内的黑色填充成分的粒径优选为不大于发光元件200厚度的1/10，其可避免出现由于黑色填充成分的粒径过大所导致的填充层210对发光元件200的披覆效果较差，并进而影响发光模组的对比度的问题。填充层210具体可以为由粒径不大于1μm的黑色填充成分分散于硅胶、环氧树脂、聚酰亚胺、低温玻璃、聚硅氧烷、聚硅氮烷等透明或者半透明的材料中而形成的构件，填充层210中的黑色填充成分包括但不限于是炭黑、氮化钛、氧化铁、四氧化三铁、铁粉等。黑色填充成分的粒径范围优选为10~100nm，或者100~200nm，或者200~300nm，或者300nm~500nm。填充层210也可采用黑色染料。
填充层210至少覆盖发光元件200靠近出光面的侧壁50%以上，优选为覆盖发光元件200全部侧壁，可防止相邻发光元件200之间的混色或者光干涉，以提高发光模组的对比度。作为替换的实施例，填充层210的厚度可以大于发光元件200的厚度，可以防止发光元件200底部漏光导致的光干扰。填充层210的厚度优选为小于15μm。
在一种实施方式中，参照图1和图2，布线层300形成于多个发光元件200之上，并用于与发光元件200电连接。布线层300包括若干布线，且布线层周边填充有绝缘层400，以使相邻布线间电性隔离。
布线层300包括第一子布线301、第二子布线302、第三子布线303和第四子布线304，其中，第一子布线301作为公共布线，第一发光元件201、第二发光元件202和第三发光元件203中的第一电极共同连接至该第一子布线301上，第一发光元件201中的第二电极连接至第二子布线302上，第二发光元件202中的第二电极连接至第三子布线303上，第三发光元件203中的第二电极连接至第四子布线304上。布线层300可一同形成于填充层210上。
或者，第一子布线301作为公共布线，第一发光元件201、第二发光元件202和第三发光元件203中的第二电极共同连接至该第一子布线301上，第一发光元件201中的第一电极连接至第二子布线302上，第二发光元件202中的第一电极连接至第三子布线303上，第三发光元件203中的第一电极连接至第四子布线304上。布线层300可一同形成于填充层210上。
布线层300具有相对的上表面和下表面，其中，布线层300的下表面与填充层210和发光元件200接触，布线层300的上表面用于形成绝缘层400。
布线层300可以为由钛、铜、铬、镍、金、铂、铝、氮化钛、氮化钽或者钽等中的至少一种材料所制成的单层或者多层。在本实施例中，布线层300可以包括第一层310和第二层320，第一层310与发光元件200直接接触，第二层320形成于第一层310之上。第一层310用于将第二层320粘附于发光元件200和填充层210上，第二层320主要起导电作用。第一层310的材料包括但不限于是钛、镍、氮化钛、氮化钽或者钽中的一种或者多种，第二层320的材料包括但不限于是铜、铝或者金中的一种或者多种。布线层300可通过溅射、蒸镀等方式制备。
较佳地，布线层300的厚度优选为50nm~1000nm，其中，第一层310的厚度优选为10 nm~200nm，第二层320的厚度优选为200nm~800nm，第一层310的厚度小于第二层320的厚度。
在一种实施方式中，参见图1和图2，导电焊盘500形成于布线层300远离发光元件200的一侧，并通过布线层300与发光元件200电连接。
导电焊盘500包括第一焊盘501、第二焊盘502、第三焊盘503和第四焊盘504，第一焊盘501作为公共焊盘，第一发光元件201、第二发光元件202和第三发光元件203中的第一电极通过第一子布线301共同连接至该第一焊盘501上，第一发光元件201的第二电极通过第二子布线302连接至第二焊盘502上，第二发光元件202中的第二电极通过第三子布线303连接至第三焊盘503上，第三发光元件203中的第二电极通过第四子布线304连接至第四焊盘504上。
或者，第一焊盘501作为公共焊盘，第一发光元件201、第二发光元件202和第三发光元件203中的第二电极通过第一子布线301共同连接至该第一焊盘501上，第一发光元件201的第一电极通过第二子布线302连接至第二焊盘502上，第二发光元件202中的第一电极通过第三子布线303连接至第三焊盘503上，第三发光元件203中的第一电极通过第四子布线304连接至第四焊盘504上。
在一种实施方式中，导电焊盘500包括导电层510，导电层510可以为由钛、铜、金、铂等中的至少一种材料所制成的单层或多层，其厚度优选为10~50μm，例如20μm、30μm、40μm。
作为可替换的实施方式，参见图2，导电焊盘500包括依次形成于布线层300之上的导电层510和保护层530。在该发光模组安装于显示装置之前，保护层530完全覆盖导电层510的上表面，能够有效防止导电层510被氧化，并提高发光模组的稳定性；在该发光模组安装于显示装置时，保护层530将会被破坏或去除。保护层530不会对导电焊盘500的结合性与导电性产生影响，其厚度优选为25~50nm。
保护层530可以由金、铂等金属材料所制成，在该发光模组安装于显示装置的过程中，在预设温度下利用焊接材料将导电焊盘500与电路板进行焊接，在焊接过程中，焊接材料流动并产生形变，焊接材料的形变可破坏由金、铂等金属材料所制成的保护层530的完整性。
或者，保护层530可以为OSP等有机材料，在该发光模组安装于显示装置的过程中，在预设温度下利用焊接材料将导电焊盘500与电路板进行焊接，OSP等有机材料在该温度下溶解从而被移除。
较佳地，导电层510和保护层530之间还设置粘合层520。粘合层520可以为由铬、钛、镍、氮化钽、钽等中的至少一种材料所制成的单层或多层。粘合层520的厚度优选为3~5μm。
作为可替换的实施方式，参见图3，导电焊盘500包括依次形成于布线层300之上的导电层510和共晶层540。共晶层540可以为由Sn、SnAg、AuSn等中的至少一种材料所制成的单层或多层，其厚度为10~50nm。共晶层540可有效增加发光模组应用至电路板时的结合力，在应用时无需再次印刷锡膏或者只需刷少量的锡膏，提高了客户端使用便利性。
较佳地，导电层510和共晶层540之间还设置粘合层520。粘合层520可以为由铬、钛、镍、氮化钽、钽等中的至少一种材料所制成的单层或多层。粘合层520的厚度优选为3~5μm。
较佳地，参见图4，共晶层540远离导电层510的一侧还设置有保护层530，保护层530的结构与上述实施例中保护层530的结构相同。
在一种实施方式中，参见图2~图4，封装层600填充于导电焊盘500的周边，以使相邻子焊盘之间电性隔离。封装层600被提供为吸收光的胶层，具体优选为黑色填充成分分散于硅胶、环氧树脂、聚酰亚胺、低温玻璃、聚硅氧烷、聚硅氮烷等透明或者半透明的材料中而形成的构件，封装层600中的黑色填充成分包括但不限于是炭黑、氮化钛、氧化铁、四氧化三铁、铁粉等。
由于发光元件200和布线层300的厚度较薄，封装层600优选为具有一定的厚度以保护发光元件200和布线层300免受来自外部因素的损伤，封装层600的厚度优选为大于20μm，此时，导电焊盘500的厚度也大于20μm。封装层600掺有粒径大于1μm的掺杂颗粒，例如二氧化硅，其可加强封装层600的机械性能，从而可以更好地保护发光元件200和布线层300。
较佳地，如图2所示，封装层600远离布线层300的表面与导电焊盘500中的导电层510远离布线层300的表面齐平。
较佳地，如图3和图4所示，封装层600远离布线层300的表面与导电焊盘500中的共晶层540远离布线层300的表面齐平，使得发光模组的表面变得平整有利于客户端的使用。
较佳地，导电焊盘500的厚度优选大于等于5μm，其可以采用电镀的方式形成。
在一种实施方式中，参见图2~图4，绝缘层400位于布线层300的上表面，并填充布线层300中的布线周边。绝缘层400开设有位于布线层300上方且用于形成导电焊盘500的通孔。上述通孔的数量与导电焊盘500的数量相同，也就是说一个导电焊盘500对应一个通孔。
绝缘层400可以为由环氧树脂、聚硅氧烷或者光致抗蚀剂等材料所形成的构件，可避免布线层300被氧化，并对不同布线之间进行电性隔离，避免发光模组出现漏电失效的现象。
布线层300的上表面设置有种子层700，种子层700进行导电从而电镀制备导电焊盘500。种子层700可以为由钛、铜、金、铂中的至少一种材料所制成的单层或多层。在本实施例中，种子层700优选为Ti/Cu叠层，其厚度优选为100~2000nm。
实施例二
图5为用于说明本申请的第二实施例的发光模组的示意性的俯视图。与实施例一不同的是：发光模组包括多组呈中心对称布置的发光元件200。
如图5所示，发光模组包括多组呈中心对称布置的发光元件200，每组包括间隔布置且具有不同波长范围的多个发光元件200，相邻发光元件200之间的间隙填充有填充层210，以使相邻发光元件200之间电性隔离。布线层300呈中心对称布置，其形成于多组发光元件200之上，并用于与发光元件200电连接。导电焊盘500呈中心对称布置，其形成于布线层300远离发光元件200的一侧，并通过布线层300与发光元件200电连接。多组发光元件200、布线层300、导电焊盘500优选为关于发光模组的中心点M对称。
由于发光模组中的多组发光元件200、布线层300、导电焊盘500均呈中心对称布置，则发光模组的结构具有良好的对称性，在对发光模组进行炒灯处理后，采用振动盘将发光模组重新排列时，可无需判断发光模组的水平方向、只需判断发光模组的垂直方向，有效缩短发光模组重新排列所需的时间，大大提高了生产效率。同时，可简化上述振动盘的结构，降低了生产成本。
在一种实施方式中，如图5所示，发光模组包括多个像素单元，每个像素单元对应上述的一组发光元件。多个像素单元按第一方向X排列成列，或者按第二方向Y排列成行，第一方向X垂直于第二方向Y。每个像素单元中发光元件200的排列方向平行于像素单元的排列方向。多个像素单元中的发光元件200的中心点均优选为在同一条轴线上。多组发光元件200关于沿第一预设方向延伸且过发光模组的中心点M的轴线对称，上述第一预设方向与像素单元的排列方向垂直。
导电焊盘500包括 m × (1+n)个子焊盘， m为发光元件200的组数， n为每组所包含的发光元件200的数量。在本实施例中，发光模组所包含的发光元件200的组数为偶数，发光模组所包含的发光元件200的组数优选为两组，且每组所包含的发光元件200的数量为3个。
作为可替换的实施方式，每个像素单元中发光元件200的排列方向垂直于像素单元的排列方向。多组发光元件200关于发光模组的中心点M对称。导电焊盘500包括 m × (1+n)个子焊盘， m为发光元件200的组数， n为每组所包含的发光元件 200的数量。
在一种实施方式中，如图5所示，每组发光元件200均包括顺序排列的第一发光元件201、第二发光元件202和第三发光元件203，第一发光元件201与第三发光元件203之间的间距为D，发光模组在上述第一预设方向上的宽度为P，D/P的值小于等于0.15，以保证该发光模组在视觉上具有颜色分布一致性。在本实施例中，第一发光元件201、第二发光元件202和第三发光元件203分别辐射不同波长范围的光线，例如，第一发光元件201辐射蓝光光线，第二发光元件202辐射绿光光线，第三发光元件203辐射红光光线。
在一种实施方式中，如图5所示，发光模组包括两组发光元件200，两组发光元件200按第一方向X排列成列。每组发光元件200包括沿第一方向X布置且顺序排列的第一发光元件201、第二发光元件202和第三发光元件203，两组发光元件200关于沿第二方向Y延伸且过发光模组的中心点M的轴线对称布置，换言之，在两组发光元件200中，发光元件200的排列顺序相反。
两组发光元件200所对应的布线层300关于发光模组的中心点M对称。每组发光元件200所对应的布线层300包括第一子布线301、第二子布线302、第三子布线303和第四子布线304，其中，第一子布线301作为公共布线，第一发光元件201、第二发光元件202和第三发光元件203中的第一电极共同连接至该第一子布线301上，第一发光元件201中的第二电极连接至第二子布线302上，第二发光元件202中的第二电极连接至第三子布线303上，第三发光元件203中的第二电极连接至第四子布线304上。
或者，第一子布线301作为公共布线，第一发光元件201、第二发光元件202和第三发光元件203中的第二电极共同连接至该第一子布线301上，第一发光元件201中的第一电极连接至第二子布线302上，第二发光元件202中的第一电极连接至第三子布线303上，第三发光元件203中的第一电极连接至第四子布线304上。
需要说明的是，上述应呈中心对称的两个子布线的形状可相同或者不相同。当上述应呈中心对称的两个子布线的形状相同时，上述所有子布线的形状以及布局方式均关于发光模组的中心点M对称。当上述应呈中心对称的两个子布线的形状不相同时，上述所有子布线的布局方式关于发光模组的中心点M对称。
两组发光元件200所对应的导电焊盘500关于发光模组的中心点M对称。每组发光元件200所对应的导电焊盘500包括第一焊盘501、第二焊盘502、第三焊盘503和第四焊盘504，第一焊盘501作为公共焊盘，第一发光元件201、第二发光元件202和第三发光元件203中的第一电极通过第一子布线301共同连接至该第一焊盘501上，第一发光元件201的第二电极通过第二子布线302连接至第二焊盘502上，第二发光元件202中的第二电极通过第三子布线303连接至第三焊盘503上，第三发光元件203中的第二电极通过第四子布线304连接至第四焊盘504上。
或者，第一焊盘501作为公共焊盘，第一发光元件201、第二发光元件202和第三发光元件203中的第二电极通过第一子布线301共同连接至该第一焊盘501上，第一发光元件201的第一电极通过第二子布线302连接至第二焊盘502上，第二发光元件202中的第一电极通过第三子布线303连接至第三焊盘503上，第三发光元件203中的第一电极通过第四子布线304连接至第四焊盘504上。
需要说明的是，上述应呈中心对称的两个子焊盘的形状可相同或者不相同。当上述应呈中心对称的两个子焊盘的形状相同时，上述所有子焊盘的形状以及布局方式均关于发光模组的中心点M对称。当上述应呈中心对称的两个子焊盘的形状不相同时，上述所有子焊盘的布局方式关于发光模组的中心点M对称。
实施例三
图6为用于说明本申请的第三实施例的发光模组的示意性的俯视图。与实施例一不同的是：发光模组包括多组呈中心对称布置的发光元件200。
如图6所示，发光模组包括多组呈中心对称布置的发光元件200，每组包括间隔布置且具有不同波长范围的多个发光元件200，相邻发光元件200之间的间隙填充有填充层210，以使相邻发光元件200之间电性隔离。布线层300呈中心对称布置，其形成于多组发光元件200之上，并用于与发光元件200电连接。导电焊盘500呈中心对称布置，其形成于布线层300远离发光元件200的一侧，并通过布线层300与发光元件200电连接。多组发光元件200、布线层300、导电焊盘500优选为关于发光模组的中心点M对称。
由于发光模组中的多组发光元件200、布线层300、导电焊盘500均呈中心对称布置，则发光模组的结构具有良好的对称性，在对发光模组进行炒灯处理后，采用振动盘将发光模组重新排列时，可无需判断发光模组的水平方向、只需判断发光模组的垂直方向，有效缩短发光模组重新排列所需的时间，大大提高了生产效率。同时，可简化上述振动盘的结构，降低了生产成本。
在一种实施方式中，如图6所示，发光模组包括多个像素单元，每个像素单元对应上述的一组发光元件。多个像素单元按第一方向X排列成列，或者按第二方向Y排列成行，第一方向X垂直于第二方向Y。每个像素单元中发光元件200的排列方向垂直于像素单元的排列方向。多个像素单元中的发光元件200的中心点均优选为在同一条轴线上。多组发光元件200关于发光模组的中心点M对称。
导电焊盘500包括2 m+1个子焊盘， m为发光元件200的组数。发光模组的中心区域优选为设置有一个子焊盘。在本实施例中，发光模组所包含的发光元件200的组数为偶数，发光模组所包含的发光元件200的组数优选为两组，且每组所包含的发光元件200的数量为3个。
在一种实施方式中，如图6所示，每组发光元件200均包括顺序排列的第一发光元件201、第二发光元件202和第三发光元件203，第一发光元件201与第三发光元件203之间的间距为D，发光模组在与像素单元的排列方向垂直的方向上的宽度为P，D/P的值小于等于0.15，以保证该发光模组在视觉上具有颜色分布一致性。在本实施例中，第一发光元件201、第二发光元件202和第三发光元件203分别辐射不同波长范围的光线，例如，第一发光元件201辐射蓝光光线，第二发光元件202辐射绿光光线，第三发光元件203辐射红光光线。
在一种实施方式中，如图6所示，发光模组包括两组发光元件200，两组发光元件200按第一方向X排列成列。每组发光元件200包括沿第二方向Y布置且顺序排列的第一发光元件201、第二发光元件202和第三发光元件203，两组发光元件200关于发光模组的中心点M对称布置，换言之，在两组发光元件200中，发光元件200的排列顺序相反。
两组发光元件200所对应的布线层300关于发光模组的中心点M对称。布线层300包括第一布线层、通孔层和第二布线层，第一布线层的布线示意图如图7所示，通孔层的示意图如图8所示，第二布线层的布线示意图如图9所示。
如图7所示，第一布线层包括第一子布线301、第二子布线302、第三子布线303、第四子布线304和第五子布线305。其中，第一子布线301与第三子布线303关于发光模组的中心点M对称，第二子布线302与第四子布线304关于发光模组的中心点M对称，第五子布线305关于发光模组的中心点M对称。
第一组发光元件中的第一发光元件201、第二发光元件202的第一电极，以及第二组发光元件中的第三发光元件203的第二电极共同连接至第一子布线301上；第一组发光元件中的第三发光元件203的第一电极连接至第二子布线302上；第一组发光元件中的第三发光元件203的第二电极，以及第二组发光元件中的第一发光元件201、第二发光元件202的第一电极共同连接至第三子布线303上；第二组发光元件中的第三发光元件203的第一电极连接至第四子布线304上；两组发光元件中的第二发光元件202的第二电极共同连接至第五子布线305上。
如图8所示，通孔层包括若干个通孔3001，并具体包括位于第一子布线301、第二子布线302、第三子布线303、第四子布线304和第五子布线305上方的通孔，以及位于第一发光元件201中第二电极上方的通孔。
如图9所示，第二布线层包括第六子布线306和第七子布线307，且第六子布线306和第七子布线307关于发光模组的中心点M对称。第六子布线306、第七子布线307分别用于与两组发光元件中的第一发光元件201的第二电极连接。
较佳地，第二布线层还包括多个互连子布线308，多个互连子布线308关于发光模组的中心点M对称。多个互连子布线308分别形成在第一子布线301、第二子布线302、第三子布线303、第四子布线304和第五子布线305上方的通孔内，并分别与第一子布线301、第二子布线302、第三子布线303、第四子布线304和第五子布线305连接，以将第一子布线301、第二子布线302、第三子布线303、第四子布线304和第五子布线305引出。
需要说明的是，上述应呈中心对称的两个子布线的形状可相同或者不相同。当上述应呈中心对称的两个子布线的形状相同时，上述所有子布线的形状以及布局方式均关于发光模组的中心点M对称。当上述应呈中心对称的两个子布线的形状不相同时，上述所有子布线的布局方式关于发光模组的中心点M对称。
两组发光元件200所对应的导电焊盘500关于发光模组的中心点M对称。导电焊盘500包括第一焊盘501、第二焊盘 502、第三焊盘 503、第四焊盘 504和第五焊盘505。其中，第一焊盘501与第一子布线301电性连接；第二焊盘502与第二子布线302、第六子布线306电性连接；第三焊盘503与第三子布线303电性连接；第四子焊盘504与第四子布线304、第七子布线307电性连接；第五焊盘505与第五子布线305电性连接。较佳地，第一子布线301、第二子布线302、第三子布线303、第四子布线304和第五子布线305分别通过互连子布线308连接至与其对应的子焊盘上。
需要说明的是，上述应呈中心对称的两个子焊盘的形状可相同或者不相同。当上述应呈中心对称的两个子焊盘的形状相同时，上述所有子焊盘的形状以及布局方式均关于发光模组的中心点M对称。当上述应呈中心对称的两个子焊盘的形状不相同时，上述所有子焊盘的布局方式关于发光模组的中心点M对称。
实施例四
图10和图12为用于说明本申请的第四实施例的发光模组的示意性的俯视图。与实施例一不同的是：发光模组包括多组呈中心对称布置的发光元件200。
如图10和图12所示，发光模组包括多组呈中心对称布置的发光元件200，每组包括间隔布置且具有不同波长范围的多个发光元件200，相邻发光元件200之间的间隙填充有填充层210，以使相邻发光元件200之间电性隔离。布线层300呈中心对称布置，其形成于多组发光元件200之上，并用于与发光元件200电连接。导电焊盘500呈中心对称布置，其形成于布线层300远离发光元件200的一侧，并通过布线层300与发光元件200电连接。多组发光元件200、布线层300、导电焊盘500优选为关于发光模组的中心点M对称。
由于发光模组中的多组发光元件200、布线层300、导电焊盘500均呈中心对称布置，则发光模组的结构具有良好的对称性，在对发光模组进行炒灯处理后，采用振动盘将发光模组重新排列时，可无需判断发光模组的水平方向、只需判断发光模组的垂直方向，有效缩短发光模组重新排列所需的时间，大大提高了生产效率。同时，可简化上述振动盘的结构，降低了生产成本。
在一种实施方式中，如图10和图12所示，发光模组包括多个像素单元，每个像素单元对应上述的一组发光元件。多个像素单元按第一方向X排列成列，按第二方向Y排列成行，第一方向X垂直于第二方向Y。发光模组在第一方向X、第二方向Y上的宽度均优选为小于等于3mm，进一步地小于等于2mm或者1.6mm，发光元件200在第一方向X、第二方向Y上的宽度均优选为小于等于100μm。
在相邻的两个像素单元中，两个像素单元中的发光元件200的排列方向垂直，即一个像素单元中的发光元件200沿着第一方向X排列，另一像素单元中的发光元件200沿着第二方向Y排列；两个像素单元中的发光元件200的中心点优选为在同一条轴线上。需要说明的是，上述相邻的两个像素单元可以指的是在第一方向X上相邻的两个像素单元，也可以指的是在第二方向Y上相邻的两个像素单元。
导电焊盘500包括 1+m × n个子焊盘， m为发光元件200的组数， n为每组所包含的发光元件200的数量。在本实施例中，发光模组所包含的发光元件200的组数优选为四组，且每组所包含的发光元件200的数量为3个。
在一种实施方式中，如图10和图12所示，每组发光元件200均包括顺序排列的第一发光元件201、第二发光元件202和第三发光元件203，第一发光元件201与第三发光元件203之间的间距为D，发光模组在第一方向X或者第二方向Y上的宽度为P，D/P的值小于等于0.15，以保证该发光模组在视觉上具有颜色分布一致性。在本实施例中，第一发光元件201、第二发光元件202和第三发光元件203分别辐射不同波长范围的光线，例如，第一发光元件201辐射蓝光光线，第二发光元件202辐射绿光光线，第三发光元件203辐射红光光线。
在一种实施方式中，如图10和图12所示，导电焊盘500包括一个公共焊盘5001和若干独立焊盘，公共焊盘5001优选为设置发光模组的中心区域，独立焊盘的数量与发光元件200的数量对应。上述公共焊盘5001为阳极焊盘，所有发光元件200中的阳极共同连接至该公共焊盘5001上，每个发光元件200中的阴极分别连接至与其对应的独立焊盘上；或者，上述公共焊盘5001为阴极焊盘，所有发光元件200中的阴极共同连接至该公共焊盘5001上，每个发光元件200中的阳极分别连接至与其对应的独立焊盘上。
这种共阳/阴极的连接方式可使具有小间距像素点的发光模组具有更大的空间用于进行布线设计，且通过上述共阳/阴极的连接方式可使四组发光元件200集合在一起，以形成四合一的发光模组。上述发光模组任意旋转90°，均可与未旋转前的发光模组的布局重合，能够提高发光模组转移对位时的对位精度，降低对位难度。
较佳地，如图10所示，至少部分独立焊盘不位于发光元件200的上方，公共焊盘5001、以及不位于发光元件上方的独立焊盘在第一方向X、第二方向Y上的宽度均优选为120μm~200μm。在本实施例中，所有独立焊盘均不位于发光元件200的上方。
较佳地，如图12所示，至少部分独立焊盘位于发光元件200的上方，公共焊盘5001、以及位于发光元件上方的独立焊盘在第一方向X、第二方向Y上的宽度均优选为200μm~300μm。在本实施例中，独立焊盘均位于发光元件200的上方。当独立焊盘位于发光元件200的上方时，可使得公共焊盘5001、独立焊盘的设计宽度更大，且使发光模组的整体宽度设计的更小。
在一种实施方式中，如图10所示，发光模组包括四组发光元件200，四组发光元件200按第一方向X排列成两列，按第二方向Y排列成两行。在此特别说明的是，第一行第一列的那组发光元件简写为D11，第一行第二列的那组发光元件简写为D12，第二行第一列的那组发光元件简写为D21，第二行第二列的那组发光元件简写为D22。D11和D22中的发光元件200的排列方向相互平行，D12和D21中的发光元件200的排列方向相互平行，且垂直于D11和D22中的发光元件200的排列方向。在本实施例中，D11和D22中的发光元件200均沿第一方向X排列，D12和D21中的发光元件200均沿第二方向Y排列。四组发光元件200关于发光模组的中心点M对称布置。
四组发光元件200所对应的布线层300关于发光模组的中心点M对称。每组发光元件200所对应的布线层300如图11所示，且包括第一子布线301、第二子布线302、第三子布线303、第四子布线304、第五子布线305和第六子布线306，其中，第一发光元件201的阳极连接至第一子布线301上，第二发光元件202的阳极连接至第二子布线302上，第三发光元件203的阳极连接至第三子布线303上，第一发光元件201的阴极连接至第四子布线304上，第二发光元件202的阴极连接至第五子布线305上，第三发光元件203的阴极连接至第六子布线306上。
需要说明的是，上述应呈中心对称的两个子布线的形状可相同或者不相同。当上述应呈中心对称的两个子布线的形状相同时，上述所有子布线的形状以及布局方式均关于发光模组的中心点M对称。当上述应呈中心对称的两个子布线的形状不相同时，上述所有子布线的布局方式关于发光模组的中心点M对称。
四组发光元件200所对应的导电焊盘500关于发光模组的中心点M对称。每组发光元件200所对应的导电焊盘500如图11所示，且包括公共焊盘5001、第一独立焊盘5002、第二独立焊盘5003和第三独立焊盘5004，第一发光元件201、第二发光元件202和第三发光元件203中的阳极分别通过第一子布线301、第二子布线302、第三子布线303共同连接至该公共焊盘5001上，第一发光元件201的阴极通过第四子布线304连接至第一独立焊盘5002上，第二发光元件202中的阴极通过第五子布线305连接至第二独立焊盘5003上，第三发光元件203中的阴极通过第六子布线306连接至第三独立焊盘5004上。
需要说明的是，上述应呈中心对称的两个子焊盘的形状可相同或者不相同。当上述应呈中心对称的两个子焊盘的形状相同时，上述所有子焊盘的形状以及布局方式均关于发光模组的中心点M对称。当上述应呈中心对称的两个子焊盘的形状不相同时，上述所有子焊盘的布局方式关于发光模组的中心点M对称。
需要说明的是，图12所示的发光模组的上述结构与图10所示的发光模组的上述结构相同，在这里就不再一一赘述。
实施例五
图14是用于说明本申请的第五实施例的显示装置的示意性的平面图。
参照图14，显示装置10000包括TFT基板11000和多个发光模组1000，该发光模组1000设置于TFT基板11000上。该发光模组100成行与列构成矩阵状设置于TFT基板11000上，并且分别与TFT基板11000电性连接。TFT基板11000包括TFT驱动电路，并且所述TFT驱动电路布置为以有源矩阵方式驱动所述发光模组1000。通过TFT基板11000可以驱动发光模组1000发出对应颜色的光线。
在一实施例中，TFT驱动显示装置的功率P≈P TFT +P LED = I*( U TFT +U LED),其中P TFT 为TFT驱动电路消耗的功率，P LED 为LED芯片消耗的功率，I为输入电流，U TFT为TFT驱动电压，U LED为LED芯片电压。当显示装置在使用时, P TFT会远大于P LED，同电流下P TFT约为P LED的3-4倍。然而，TFT驱动电路的作用为控制发光模组的开关，对于显示性能而言没有直接影响，TFT驱动电路消耗的功率属于无效的功率损耗。图15为TFT驱动电路图，图16为TFT电学特性，参照图15和图16,可知电流输入由Data端输入信号控制，并且TFT驱动电路工作是在恒流区，因此，电流I的大小则由栅极电压U GS来决定的。当U GS降低时，输入电流I同样降低，此时P TFT大大降低，因此可以大幅度降低显示装置的功耗。但由于输入电流I降低会造成P LED下降，发光元件的光电性可能受到影响，从而导致显示装置性能降低。
因此，根据本申请的一个方面，提供一种TFT驱动电路具有较低功耗又不影响发光模组光电性能的显示装置。参照图14，显示装置10000包括TFT基板和多个发光模组1000，该发光模组1000设置于TFT基板11000上。其中，发光模组1000包括间隔布置的多个发光元件200，多个发光元件200包括发射第一波长的第一发光元件201、发射第二波长的第二发光元件202以及发射第三波长的第三发光元件203。
在一具体实施例中，图17是用于说明本申请的第五实施例的发光模组的示意性的平面图，图18是沿图17中的B-B’线的剖面图。参照图17和图18，发光模组1000包括间隔布置的多个发光元件200，相邻发光元件200之间的间隙填充有填充层210，以使相邻发光元件200之间电性隔离。布线层300形成于多个发光元件200上，并用于与发光元件200电连接。导电焊盘500形成于布线层300远离发光元件200的一侧，并通过布线层300与发光元件200电连接。多个发光元件200包括发射第一波长的第一发光元件201、发射第二波长的第二发光元件202以及发射第三波长的第三发光元件203。第一发光元件201包括发射第一波长的第一发光二极管2011和第二发光二极管2012，第二发光元件202包括发射第二波长的第三发光二极管2021和第四发光二极管2022，第三发光元件203包括发射第三波长的第五发光二极管2031和第六发光二极管2032。发射同种波长的发光二极管按照第一方向排列，第一发光元件、第二发光元件、第三发光元件按照第二方向排列，第一方向和第二方向基本垂直。
在显示装置通过降低输入电流以减小TFT驱动电路无效功耗的前提下，上述发光模组中发光元件200在额定电流1μA时，电压大于等于3V。通过控制发光元件的电功率（P=IV）不变，使得发光元件串联时电压大于等于3V，因此显示装置有机会能通过降低输入电流确保发光模组中的发光元件的的显示性能与电流降低前变化不大。与此同时，显示装置中的TFT驱动电路由于电流降低，其TFT驱动电路的无效功率损耗大幅度降低，使得显示装置整体功率下降，提升了整体使用寿命。
较佳地，发射同种波长的发光二极管之间的间距X1优选为50μm以下，在一些显示装置的应用中，例如可以为40-50μm，30-40μm，20-30μm，或者10-20μm。第一发光元件、第二发光元件、第三发光元件之间的间距X2优选为50μm以下，在一些显示装置的应用中，例如可以为40-50μm，30-40μm，20-30μm，或者10-20μm。若发光元件之间的间距大于50μm，其显示装置在远距离观看时易容易出现重影，显示效果较差。
发光元件200的发光面积占比为30%以下，优选可以达到15%以下，甚至5%以下，例如可以为8.5%，或者2.8%，或者1.125%，甚至更低。
布线层可包括第一子布线301、第二子布线302、第三子布线303、第四子布线304、第一连接部3005、第二连接部3006以及第三连接部3007。第一子布线301作为公共布线，第一发光二极管2011、第三发光二极管2021、第五发光二极管2031中的第一电极共同连接至该第一子布线301，第一发光二极管2011的第二电极和第二发光二极管2012的第一电极连接至第一连接部3005，第三发光二极管2021的第二电极和第四发光二极管2022的第一电极连接至第二连接部3006，第五发光二极管2031的第二电极和第六发光二极管2032的第一电极连接至第三连接部3007，第二发光二极管2012的第二电极连接至第二子布线302上，第四发光二极管2022的第二电极连接至第三子布线303上，第六发光二极管2032的第二电极连接至第四子布线304上。第一发光二极管2011、第二发光二极管2012之间通过第一连接部3005串联，第三发光二极管2021、第四发光二极管2022之间通过第二连接部3006串联，第五发光二极管2031、第六发光二极管2032之间通过第三连接部3007串联。
发射同种波长的发光二极管通过连接部串联连接，使得发光元件200在额定电流为1μA时，电压大于等于3V；发光模组中串联的发光二极管可提高发光元件200的电压，维持电功率不变，其可以避免由于显示装置降低输入电流导致发光模组中的发光元件的光电效率降低，并进而影响显示装置的性能。
作为可替换的实施例，平面图和对应剖面图可参照图1和图2。发光模组包括间隔布置的多个发光元件200，多个发光元件200包括发射第一波长的第一发光元件201、发射第二波长的第二发光元件202以及发射第三波长的第三发光元件203。图19是用于说明根据本发明又一实施例的第一发光元件201的示意性的剖视图。在此，虽然以第一发光元件201为例进行说明，然而第二发光元件202、第三发光元件203也具有大致相似的结构，因此省略彼此重复的说明。参照图19，第一发光元件201包括第一发光二极管2011、第二发光二极管2012，每个发光二极管均包括半导体堆叠层20，半导体堆叠层20包括第一半导体层21、有源层22和第二半导体层23。第一发光元件201具有一连接电极24，连接电极24连接第一发光二极管2011的第一半导体层21和第二发光二极管2012的第二半导体层23，使得第一发光元件201中的两个发光二极管串联连接。第一发光元件201还包括第一电极25和第二电极26，发光二极管2011上具有形成在第二半导体层23上的第二电极26，发光二极管2012上具有形成在第一半导体层21上的第一电极25。第一发光元件201还包括绝缘保护层27，部分绝缘保护层27设置于部分的连接电极24与第一发光二极管2011和第二发光二极管2012之间。
作为可替换的实施例，参照图20，第一发光元件201至少包括第一发光二极管2011和第二发光二极管2012，第一发光二极管2011的第二半导体层上形成有隧穿结35，在隧穿结35上方形成第二发光二极管2012的第一半导体层，通过隧穿结35串联连接第一发光二极管2011和第二发光二极管2012。
发射同种波长的发光二极管通过连接电极24或隧穿结35串联连接，使得发光元件200在额定电流为1μA时，电压大于等于3V；发光模组中串联的发光二极管可提高发光元件200的电压，维持电功率不变，其可以避免由于显示装置降低输入电流导致发光模组中的发光元件的光电效率降低，并进而影响显示装置的性能。
布线层300包括第一子布线301、第二子布线302、第三子布线303和第四子布线304，其中，第一子布线301作为公共布线，第一发光元件201、第二发光元件202和第三发光元件203中的第一电极共同连接至该第一子布线301上，第一发光元件201中的第二电极连接至第二子布线302上，第二发光元件202中的第二电极连接至第三子布线303上，第三发光元件203中的第二电极连接至第四子布线304上。
此外，在一些实施例中，发射不同波长的发光元件串联发光二极管的颗数可以相同或不相同，例如第一发光元件201可以包括三个发光二极管串联，第二发光元件202和第三发光元件可包括两个发光二极管串联，本发明皆不限制。

Claims (13)

  1. 一种显示装置，包括：
    TFT基板；
    以及发光模组，设置在所述TFT基板上；
    其中，所述发光模组包括：多个发光元件，所述多个发光元件包括发射第一波长的第一发光元件、发射第二波长的第二发光元件以及发射第三波长的第三发光元件，所述发光元件在额定电流1μA时，电压大于等于3V。
  2. 根据权利要求1所述的显示装置，其特征在于，所述发光元件至少包括两个发光二极管串联连接。
  3. 根据权利要求2所述的显示装置，其特征在于，所述发光模组还包括布线层，所述布线形成于所述多个发光元件上，并用于与所述发光元件电连接，所述发射同种波长的发光二极管通过所述布线层串联。
  4. 根据权利要求3所述的显示装置，其特征在于，所述布线层包括连接部，所述发光二极管通过所述连接部串联连接。
  5. 根据权利要求3所述的显示装置，其特征在于，所述布线层包括第一子布线、第二子布线、第三子布线、第四子布线、第一连接部、第二连接部以及第三连接部。
  6. 根据权利要求2所述的显示装置，其特征在于，所述发射同种波长的发光二极管间距小于等于50μm，发射不同波长的发光元件之间间距小于等于50μm。
  7. 根据权利要求2所述的显示装置，其特征在于，所述发光元件包括连接电极或隧穿结，所述发射同种波长的发光二极管通过所述连接电极或所述隧穿结串联连接在所述发光元件上。
  8. 根据权利要求7所述的显示装置，其特征在于，还包括布线层，所述布线形成于所述多个发光元件上，并用于与所述发光元件电连接。
  9. 根据权利要求8所述的显示装置，其特征在于，所述布线层包括第一子布线、第二子布线、第三子布线、第四子布线，所述第一发光元件电连接第一子布线和第二子布线，所述第二发光元件电连接第一子布线和第三子布线，所述第三发光元件电连接第一子布线和第四子布线。
  10. 根据权利要求1所述的显示装置，其特征在于，所述TFT基板包括TFT驱动电路，并且所述TFT驱动电路布置为以有源矩阵方式驱动所述发光模组。
  11. 根据权利要求1所述的显示装置，其特征在于，所述发光模组还包括填充层，所述填充层形成于相邻所述发光元件之间，所述填充层的厚度小于等于15μm。
  12. 根据权利要求11所述的显示装置，其特征在于，所述发光模组还包括封装层和导电焊盘，所述导电焊盘形成于所述填充层上，所述封装层形成于所述导电焊盘的周边，所述封装层的厚度大于20μm。
  13. 根据权利要求12所述的显示装置，其特征在于，所述导电焊盘的厚度大于20μm。
PCT/CN2022/073810 2022-01-25 2022-01-25 发光模组和显示装置 WO2023141764A1 (zh)

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JP2011065837A (ja) * 2009-09-16 2011-03-31 Sharp Corp 有機ｅｌ表示装置及びその製造方法
CN105528969A (zh) * 2016-03-03 2016-04-27 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN106816502A (zh) * 2017-04-12 2017-06-09 京东方科技集团股份有限公司 一种led芯片、led发光基板、显示装置及彩色显示控制方法
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CN111292634A (zh) * 2020-03-26 2020-06-16 京东方科技集团股份有限公司 一种显示基板和显示面板
WO2022004926A1 (ko) * 2020-07-03 2022-01-06 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011065837A (ja) * 2009-09-16 2011-03-31 Sharp Corp 有機ｅｌ表示装置及びその製造方法
CN105528969A (zh) * 2016-03-03 2016-04-27 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN106816502A (zh) * 2017-04-12 2017-06-09 京东方科技集团股份有限公司 一种led芯片、led发光基板、显示装置及彩色显示控制方法
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WO2022004926A1 (ko) * 2020-07-03 2022-01-06 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치

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