WO2023137952A1 - 一种适用于双重光刻技术的版图拆分方法、版图拆分装置及电子设备 - Google Patents

一种适用于双重光刻技术的版图拆分方法、版图拆分装置及电子设备 Download PDF

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WO2023137952A1
WO2023137952A1 PCT/CN2022/098426 CN2022098426W WO2023137952A1 WO 2023137952 A1 WO2023137952 A1 WO 2023137952A1 CN 2022098426 W CN2022098426 W CN 2022098426W WO 2023137952 A1 WO2023137952 A1 WO 2023137952A1
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layout
mask
mask pattern
size
splitting
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PCT/CN2022/098426
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English (en)
French (fr)
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闫歌
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深圳晶源信息技术有限公司
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Publication of WO2023137952A1 publication Critical patent/WO2023137952A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes

Definitions

  • the invention relates to the field of integrated circuit mask design, in particular to a layout splitting method, a layout splitting device and electronic equipment suitable for dual photolithography technology.
  • the current mainstream 1.35NA 193nm immersion lithography machine can provide a half-pitch resolution of 36-40nm, which can meet the requirements of the 28nm logic technology node. If it is smaller than this size, double exposure or even multiple exposure technology is required.
  • dual lithography technology one is Lithography-Etch-Lithography-Etch (Lithography-Etch-Lithography-Etch).
  • LELE Lithography-Etch-Lithography-Etch
  • the basic principle of LELE is to split the original layer of lithography pattern into two or more masks, and use multiple exposures and etchings to realize the pattern designed in the original layer.
  • the other is self-aligned double patterning.
  • SADP is to deposit sidewalls around the first photolithography pattern after one photolithography, and realize the frequency doubling of the spatial pattern by etching.
  • the present invention provides a layout splitting method, a layout splitting device and electronic equipment suitable for dual photolithography technology.
  • the present invention provides a technical solution: a method for splitting an initial layout into a first layout and a second layout suitable for dual photolithography, comprising the following steps: providing an initial layout, the initial layout including a plurality of mask graphics; splitting the plurality of mask graphics into conflicting graphics and non-conflicting graphics based on a preset first splitting rule; dividing the conflicting graphics into a first part of mask graphics and a second part of mask graphics based on a preset second splitting rule, There is no conflict between the mutual mask graphics in the mask graphics; the conflict-free graphics are divided into at least two size levels of first-size mask graphics and second-size mask graphics based on a preset third split rule, the maximum size of the first-size mask graphics is greater than the maximum size of the second-size mask graphics; and respectively merging a part of the first-size mask graphics and the second-size mask graphics with the first part of the mask graphics to obtain the first layout, and merging the other part with the second part of the mask graphics to obtain the second
  • the steps of merging a part of the first size mask pattern and the second size mask pattern with the first part of the mask pattern to obtain the first layout, and merging the other part with the second part of the mask pattern to obtain the second layout are as follows: split the first size mask pattern into a third part of the mask pattern and a fourth part of the mask pattern based on a preset fourth split rule.
  • One of the two mask patterns of the threshold or angle threshold is defined as the third part mask pattern, the other is defined as the fourth part mask pattern, and the mask pattern part greater than the side threshold or the corner threshold is classified as the third part mask pattern, and the other part is classified as the fourth part mask pattern;
  • the first part of the mask pattern is merged with the third part of the mask pattern to obtain the initial first layout, and the second part of the mask pattern is merged with the fourth part of the mask pattern to obtain the initial second layout;
  • One of the mask patterns of the value is split into the initial first layout, and the other is split into the initial second layout, and the part of the mask pattern larger than the edge threshold or the corner threshold is classified as the initial first layout, and the other part is classified as the initial second layout.
  • the preset first splitting rule is as follows: set the edge threshold between the sides of any two adjacent mask graphics, and the angle threshold between the corners of any two adjacent mask graphics, divide the mask graphics smaller than the edge threshold or the corner threshold into conflicting graphics, and the rest are divided into non-conflicting graphics.
  • the range of edge threshold is: 80-150nm
  • the range of angle threshold is: 80-150nm
  • edge threshold is: 110nm
  • corner threshold is: 110nm
  • the preset second splitting rule is as follows: set the edge threshold between the sides of any two adjacent mask graphics, and the angle threshold between the corners of any two adjacent mask graphics, define one of the two mask graphics smaller than the edge threshold or the corner threshold as the first part of the mask graphics, and the other as the second part of the mask graphics.
  • the mask patterns are arranged regularly, and when the mask patterns on the same row or column are smaller than the edge threshold or angle threshold, all the mask patterns on the same row or column are classified as the first partial mask or the second partial mask.
  • the preset third splitting rule is as follows: set an area size threshold or a length size threshold, and classify mask graphics on non-conflicting graphics that exceed the area size threshold or exceed the length size threshold as first-size mask graphics, and the rest are classified as second-size mask graphics.
  • the preset third splitting rule is as follows: set the mask pattern diagonal length threshold, and classify the mask patterns on the non-conflicting pattern exceeding the diagonal length threshold as the first size mask pattern, and the rest are classified as the second size mask pattern.
  • the first layout and the second layout are colored with the first color and the second color, respectively.
  • the method of coloring the first layout and the second layout with the first color and the second color is as follows: before combining the first layout and the second layout, first color the first part of the mask graphics with the first color, and color the second part of the mask graphics with the second color; then color the third part of the mask graphics and the fourth part of the mask graphics with the first color and the second color; finally color the second size mask graphics that are split into the original first layout and the original second layout.
  • a circle is used as a node for each mask figure in the conflicting figure
  • a topological relationship graph is formed by connecting conflicting nodes with straight lines, and the first part of the mask figure and the second part of the mask figure are colored based on the topological relationship figure.
  • the present invention also provides a layout splitting device, which is used to split the initial layout into a first layout and a second layout, including a layout design module: used to provide an initial layout, and the initial layout includes a plurality of mask graphics; a first split module: split the plurality of mask graphics into conflicting graphics and non-conflicting graphics based on a preset first split rule; second split module: divide the conflicting graphics into a first part of mask graphics and a second part of mask graphics based on a preset second split rule There is no conflict between the mutual mask graphics in the mask graphics; the third splitting module: based on the preset third splitting rule, divide the non-conflicting graphics into at least two size levels of the first size mask graphics and the second size mask graphics, the maximum size of the first size mask graphics is larger than the maximum size of the second size mask graphics; the fourth split module: respectively split the first size mask graphics and the second size mask graphics to form two parts, one of which is merged with the first part of the mask
  • a coloring module is further included, the coloring module is connected to the fourth splitting module, and the coloring module is used to color the first layout and the second layout based on the first color and the second color respectively.
  • the present invention also provides an electronic device, which includes one or more processors and a storage device, and the storage device is used to store one or more programs.
  • the one or more processors implement the above-mentioned layout splitting method suitable for dual lithography technology.
  • the non-conflicting graphics are split into mask graphics of two sizes, and the non-conflicting graphics can be further split in parallel based on the size range to merge with the conflicting split results.
  • the first layout and the second layout are obtained at the fastest speed, which greatly improves efficiency.
  • the fourth splitting rule is still based on setting the edge threshold between the sides of any adjacent two mask graphics and the angle threshold between the corners of any two adjacent mask graphics as the splitting method, so that the splitting rule is simplified, the complexity of the system operation is reduced, and the efficiency of splitting is improved.
  • the set first splitting rule and the second splitting rule are both based on the edge threshold between the sides of the two mask graphics and the angle threshold between the corners of any two adjacent mask graphics. In this way, the rules are relatively simple during the splitting process, the calculation complexity is low, the memory consumption of the calculator is reduced, and the splitting speed is further improved.
  • the range of setting edge threshold is: 80-150nm, and the range of corner threshold is: 80-150nm.
  • the mask pattern split out within this threshold range can meet the requirements of most customers for imaging resolution and improve applicability.
  • the mask patterns are arranged regularly. When the mask patterns on the same row or column are smaller than the edge threshold or angle threshold, all mask patterns in the same row or column are classified as the first part of the mask or the second part of the mask. This can avoid too much consideration of the position of the mask pattern after splitting, avoid mistakes, and improve efficiency.
  • the established topological relationship can well calibrate the position information of each mask graphic on the conflicting graphics, so that when coloring the first part of the mask graphics and the second part of the mask graphics, coloring can be performed based on the reference of the topological relationship diagram to avoid coloring errors. When missing or wrong coloring occurs, the topological relationship diagram can be used for checking and correction.
  • the layout splitting device and electronic equipment suitable for dual photolithography provided by the present invention have the same beneficial effect as the layout split method suitable for dual photolithography.
  • FIG. 1 is a schematic flowchart of a layout splitting method applicable to dual photolithography provided by the first embodiment of the present invention
  • FIG. 2 is a schematic diagram of a partial region structure of the initial layout provided in step S1 of the present invention.
  • Fig. 3A is a schematic diagram of judging whether there is a conflict between the sides of two mask patterns in the present invention.
  • 3B is a schematic diagram of determining whether there is a conflict between corners of two mask patterns in the present invention.
  • FIG. 4A is a schematic diagram of splitting the initial layout into conflicting graphics and non-conflicting graphics after step S2 is performed;
  • Figure 4B is an enlarged schematic view of the rectangular frame circled in Figure 4A;
  • FIG. 5A is another schematic diagram of dividing the initial layout into conflicting graphics and non-conflicting graphics after step S2 is performed;
  • Figure 5B is an enlarged schematic view of the rectangular frame circled in Figure 5A;
  • Fig. 5C is an enlarged schematic view of another rectangular frame circled in Fig. 5A;
  • Fig. 6 is a schematic diagram split into a first part of the mask pattern and a second part of the mask pattern
  • FIG. 7 is a schematic diagram of the layout after step S4 is executed.
  • Figure 8A is a schematic diagram of the area area when calculating the area of the unconventional figure
  • Figure 8B is a schematic diagram of the area area when calculating the area of another unconventional figure
  • Fig. 9 is a detailed flowchart of step S5;
  • Fig. 10 is a detailed flowchart of coloring the first layout and the second layout
  • Fig. 11 is a topological relationship diagram established for conflicting graphics
  • Fig. 12 is a schematic diagram of the first layout and the second layout obtained by splitting
  • Fig. 13 is a block diagram of a layout splitting device provided in the second embodiment of the present invention.
  • Fig. 14 is a block diagram of another layout splitting device provided in the second embodiment of the present invention.
  • Fig. 15 is a block diagram of an electronic device provided in a third embodiment of the present invention.
  • FIG. 16 is a schematic structural diagram of a computer system suitable for implementing a server according to an embodiment of the present invention.
  • the first embodiment of the present invention provides a layout splitting method suitable for dual photolithography technology, which is used to split the initial layout into a first layout and a second layout, including the following steps:
  • an initial layout may be drawn by graphics drawing software, and the initial layout includes one or more mask patterns 10 .
  • Graphic drawing software may include klayout software.
  • the drawn initial layout is usually stored in the gds file format.
  • the layout in Figure 2 is just one portion taken from the initial layout.
  • step S2 the plurality of mask patterns are split into conflicting patterns and non-conflicting patterns based on a preset first splitting rule.
  • Resolving conflicts is a task that is primarily considered in the process of layout splitting.
  • mask patterns are divided into two types: conflicting and non-conflicting, so as to facilitate further deconfliction processing for conflicting mask patterns, instead of traversing mask patterns one by one, judging whether there is conflict one by one, and removing conflicts one by one for conflicting mask patterns, which can greatly improve the speed of splitting.
  • the preset first splitting rule is as follows: set the edge threshold between the sides of any two adjacent mask patterns 10, and the angle threshold between the corners of any two adjacent mask patterns 10, and divide the mask patterns 10 smaller than the edge threshold or angle threshold into conflicting graphics, and the rest are divided into non-conflicting graphics.
  • FIG. 3A if the distance between two sides of any two adjacent mask patterns 10 is too close, the imaging resolution will be affected, and it is considered that there is a conflict.
  • FIG. 3B if the distance between two adjacent corners between any two adjacent mask patterns 10 is too close, the imaging resolution will also be affected, and it is considered that there is a conflict. Therefore, the problem of conflict can be resolved by splitting.
  • setting of the specific values of the edge threshold and the angle threshold is mainly determined according to the required imaging resolution in the exposure imaging process.
  • the specific range of the edge threshold is: 80-150 nm
  • the specific range of the corner threshold is: 80-150 nm.
  • the value of the edge threshold may also be: 90nm, 110nm, 130nm or 140nm.
  • the value of the angular threshold can also be: 90nm, 110nm, 130nm or 140nm.
  • FIG. 4A and FIG. 5A are schematic diagrams of classifying the mask patterns 10 on the initial layout into conflicting patterns and non-conflicting patterns based on the set edge threshold of 110 nm and corner threshold of 110 nm.
  • the areas marked in light gray are non-conflicting graphics, for example, the part of the frame-selected area M, and the part of the same color as the area M is also corresponding to the non-conflicting graphics.
  • the other areas correspond to conflicting graphics, and correspond to the parts marked in black, for example, the part of the box-selected area N.
  • the part of the same color as the area N also corresponds to the conflicting graphics.
  • 4A and 5A are about two different regions on the initial layout.
  • 5B is 0.114 ⁇ m (114nm) greater than the edge threshold 110nm, which is a non-conflicting pattern.
  • the distance between adjacent mask patterns 10 is 0.07 ⁇ m (70 nm) and less than the edge threshold 110 nm, it is a conflicting pattern.
  • the preset second splitting rule is: set the edge threshold between the sides of any two adjacent mask graphics, and the angle threshold between the corners of any two adjacent mask graphics, define one of the two mask graphics smaller than the edge threshold or the corner threshold as the first part of the mask graphics, and the other as the second part of the mask graphics.
  • all the mask patterns on the same row or the same column can be classified as the first partial mask or the second partial mask.
  • the order may also be sorted sequentially, and one of the two adjacent mask patterns is classified as the first part of the mask pattern, and the other is classified as the second part of the mask pattern.
  • the set edge threshold and angle threshold may be the same as or different from those in the above step S2.
  • the mask patterns 10 are regularly arranged. If there is a conflict between the mask patterns 10 between two adjacent rows or columns, then one row or one column of the two rows is split as the first part of the mask pattern, and the other row or column is used as the second part of the mask pattern.
  • the mask patterns 10 on the odd rows serve as the first partial mask pattern
  • the mask patterns 10 on the even rows serve as the second partial mask pattern. This can not only solve the conflict problem, but also ensure that the distribution density of the mask pattern in the first part of the mask pattern after splitting is similar to the distribution density of the second part of the mask pattern, so as to ensure the exposure performance of the two.
  • the mask patterns of the odd rows are classified as the first part of the mask patterns, and the mask patterns of the even rows are classified as the second part of the mask patterns.
  • the preset third splitting rule is as follows: set the area size threshold or the length size threshold, and classify the mask graphics on the non-conflicting graphics that exceed the area size threshold or exceed the length size threshold as the first size mask graphics, and the rest are classified as the second size mask graphics.
  • the mask pattern corresponding to the area O is the mask pattern of the first size
  • the mask pattern in the area P is relatively small, corresponding to the mask pattern of the second size.
  • the P1 area corresponds to the enlarged image of the rectangular frame selection area of the area P
  • the O1 area corresponds to the enlarged image of the area O.
  • the calculation method of the length of the side length can be as follows: the start coordinate and end point coordinate in the X-axis direction corresponding to the mask pattern, the start point coordinate and the end point coordinate in the Y-axis direction, and the length of the side length of the rectangle formed by connecting the vertices corresponding to the four coordinates to form a rectangular frame corresponding to the maximum side length of the mask pattern. In this way, there is no need to traverse the length of each side, which can improve the speed very well.
  • a diagonal length threshold or other evaluation index thresholds may also be set.
  • step S3 and step S4 can be performed at the same time, or step S3 is performed first and then step S4 is performed, or step S4 is performed first and then step S3 is performed. It is preferable to carry out both at the same time, which can greatly speed up the calculation speed.
  • step S5 on the basis that the conflict-free graphics have been divided into two category mask graphics of different sizes in step S4, the mask graphics of the first size and the mask graphics of the second size can be processed in parallel, and the mask graphics of the first size and the mask graphics of the second size can be split at the same time, instead of splitting the non-conflict graphics one by one, which can greatly improve the splitting speed.
  • the steps of merging part of the mask pattern of the first size and the mask pattern of the second size with the first part of the mask pattern to obtain the first layout, and merging the other part with the second part of the mask pattern to obtain the second layout are as follows:
  • the fourth split rule includes: setting an edge threshold between sides of any two adjacent mask patterns, and an angle threshold between corners and corners of any two adjacent mask patterns, defining one of the two mask patterns smaller than the edge threshold or the corner threshold as the third part mask pattern, and the other as the fourth part mask pattern, and defining the part of the mask pattern larger than the edge threshold or the corner threshold It is classified as the third part of the mask pattern, and the other part is classified as the fourth part of the mask pattern;
  • step S51 during the process of classifying the part of the mask pattern larger than the edge threshold or the corner threshold into the third part of the mask pattern, and the other part into the fourth part of the mask pattern, one of them can be split into the third part of the mask pattern and the other into the fourth part of the mask pattern in the order of intervals. Other methods can also be used to ensure that there is no conflict between the graphics after the split.
  • step S53 the part of the mask pattern larger than the edge threshold or the corner threshold is classified into the initial first layout, and the other part is classified into the initial second layout.
  • One of them may be split into a third part of the mask pattern and the other part into a fourth part of the mask pattern in the order of intervals.
  • Other methods can also be used to ensure that there is no conflict between the graphics after the split.
  • the first layout and the second layout are colored with the first color and the second color, respectively.
  • the method of coloring the first layout and the second layout with the first color and the second color respectively includes the following steps:
  • Step T11 may be performed after step S3 is performed.
  • Step T12 is executed after step S51 is executed.
  • Step T13 is executed after step S53 is executed.
  • the first part of the mask graphics can be colored with a first color
  • the second part of the mask graphics can be colored with a second color in the following manner: use a circle as a node for each mask graphic in the conflicting graphics, connect the conflicting nodes with straight lines to form a topological relationship graph, and color the first partial mask graphic and the second partial mask graphic based on the topological relationship graph.
  • FIG. 11 is a topological relationship diagram established for the mask pattern in FIG. 6 .
  • the established topological relationship can well calibrate the position information of each mask graphic on the conflicting graphic, so that when coloring the first part of the mask graphic and the second part of the mask graphic, it can be colored based on the reference of the topological relationship graph to avoid coloring errors.
  • the topology relationship graph can be used for checking and correction.
  • area A is the first layout and the second layout after the initial layout combined in FIG. 4A and FIG. 5A is split and colored.
  • the area B, area C, area D, and area E correspond to enlarged images of the framed rectangular area in area A, and area B and area C are also divided into second-size mask patterns based on step S4. From area B and area C, it can be clearly seen that the mask pattern of the second size is colored in two different colors at intervals, wherein the coloring of the same color (such as light color) corresponds to the first layout, and the coloring of another darker color corresponds to the second layout.
  • the region D is based on the conflict-free graphics split into step S2, wherein the region D is further split into a mask pattern of the first size and a mask pattern of the second size based on the step S4, wherein the mask pattern of the elongated strip corresponds to the mask pattern of the first size, and the mask pattern of the small rectangle corresponds to the mask pattern of the second size.
  • the mask pattern of the first size in the area D is divided into a third part mask pattern and a fourth part mask pattern based on step S51, wherein in the area D, the mask pattern of the light color corresponds to the third part of the mask pattern, and the mask pattern of the dark color corresponds to the fourth part of the mask pattern.
  • the mask pattern of the second size is colored in a light color and a dark color in the manner of step S53, wherein the light color is used as the first layout, and the dark color part is used as the second layout.
  • the conflicting graphics in FIG. 5A are split according to step S3 and colored in two different colors, dark color and light color, wherein the coloring of the same color (such as light color) corresponds to the first layout, and the coloring of another darker color corresponds to the second layout.
  • Area B-area E in Figure 12 is a partial explanation for obtaining the first layout and the second layout after performing steps S1-step S5 for the initial layout, where the first layout is colored in light colors, and the second layout is colored in dark colors.
  • the second embodiment of the present invention provides a layout splitting device 100 for optimizing a mask to be optimized, which includes a layout design module 30 , a first splitting module 40 , a second splitting module 50 , a third splitting module 60 , and a fourth splitting module 70 .
  • Layout design module 30 for providing an initial layout, where the initial layout includes a plurality of mask patterns;
  • the first splitting module 40 Split the plurality of mask patterns into conflicting patterns and non-conflicting patterns based on a preset first splitting rule
  • the second splitting module 50 divide the conflicting pattern into a first partial mask pattern and a second partial mask pattern based on a preset second splitting rule, and there is no conflict between mutual mask patterns in the first partial mask pattern and the second partial mask pattern;
  • the third splitting module 60 based on a preset third splitting rule, divide the non-conflicting pattern into a first size mask pattern and a second size mask pattern of at least two size levels, the maximum size of the first size mask pattern is greater than the maximum size of the second size mask pattern;
  • the fourth splitting module 70 respectively split the mask pattern of the first size and the mask pattern of the second size to form two parts, one part is merged with the mask pattern of the first part to obtain the first layout, and the other part is merged with the mask pattern of the second part to obtain the second layout.
  • the layout splitting device 100 further includes a coloring module 90, the coloring module 90 is connected to the fourth splitting module 70, the fourth splitting module 70 provides the obtained first layout and the second layout to the coloring module 90, and the coloring module 90 is used to color the first layout and the second layout based on the first color and the second color, respectively.
  • the third embodiment of the present invention provides an electronic device 200, which includes one or more processors 201 and a storage device 202,
  • the storage device 202 is configured to store one or more programs, and when the one or more programs are executed by the one or more processors 201, the one or more processors 201 implement the mask optimization method provided in the first embodiment.
  • FIG. 16 shows a schematic structural diagram of a computer system 800 suitable for implementing a terminal device/server according to an embodiment of the present invention.
  • the terminal device/server shown in FIG. 16 is only an example, and should not limit the functions and scope of use of this embodiment of the present application.
  • a computer system 800 includes a central processing unit (CPU) 801 that can perform various appropriate actions and processes according to programs stored in a read-only memory (ROM) 802 or loaded from a storage section 808 into a random access memory (RAM) 803.
  • ROM read-only memory
  • RAM random access memory
  • various programs and data required for the operation of the system 800 are also stored.
  • the CPU 801, ROM 802, and RAM 803 are connected to each other via a bus 804.
  • An input/output (I/O) interface 805 is also connected to bus 804 .
  • the following components are connected to the I/O interface 805: an input section 806 including a keyboard, a mouse, etc.; an output section 807 including a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker; a storage section 808 including a hard disk, etc.; and a communication section 809 including a network interface card such as a LAN card, a modem, etc.
  • the communication section 809 performs communication processing via a network such as the Internet.
  • Drive 810 is also connected to I/O interface 805 as needed.
  • a removable medium 811 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc., is mounted on the drive 810 as necessary so that a computer program read therefrom is installed into the storage section 808 as necessary.
  • embodiments of the present disclosure include a computer program product, which includes a computer program carried on a computer-readable medium, where the computer program includes program codes for executing the methods shown in the flowcharts.
  • the computer program may be downloaded and installed from a network via communication portion 809 and/or installed from removable media 811 .
  • CPU central processing unit
  • the above-mentioned functions defined in the method of the present invention are performed.
  • the computer-readable medium in the present invention may be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two.
  • a computer readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of computer readable storage media may include, but are not limited to, electrical connections having one or more wires, portable computer diskettes, hard disks, random access memory (RAM), read only memory (ROM), erasable programmable read only memory (EPROM or flash memory), fiber optics, portable compact disk read only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.
  • RAM random access memory
  • ROM read only memory
  • EPROM or flash memory erasable programmable read only memory
  • CD-ROM compact disk read only memory
  • optical storage devices magnetic storage devices, or any suitable combination of the foregoing.
  • Computer program code for carrying out the operations of the present application may be written in one or more programming languages, or combinations thereof, including object-oriented programming languages—such as Java, Smalltalk, C++, and conventional procedural programming languages—such as the “C” language or similar programming languages.
  • the program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server.
  • the remote computer can be connected to the user computer through any kind of network, including a local area network (LAN) or a wide area network (WAN), or it can be connected to an external computer (e.g., through the Internet using an Internet service provider).
  • LAN local area network
  • WAN wide area network
  • Internet service provider e.g., AT&T, MCI, Sprint, EarthLink, MSN, GTE, etc.
  • each block in the flowchart or block diagram may represent a module, program segment, or portion of code that includes one or more executable instructions for implementing specified logical functions.
  • the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or they may sometimes be executed in the reverse order, depending upon the functionality involved.
  • the units involved in the description in the embodiments of the present invention may be implemented by means of software or by means of hardware.
  • the present invention also provides a computer-readable medium.
  • the computer-readable medium may be included in the device described in the above embodiments, or it may exist independently without being assembled into the device.

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Abstract

集成电路掩模设计领域，一种适用于双重光刻技术的版图拆分方法、版图拆分装置（100）及电子设备（200），版图拆分方法包括如下步骤：提供包括多个掩模图形（10）的初始版图；基于第一拆分规则将多个掩模图形（10）拆分为有冲突图形（N）和无冲突图形（M）；基于第二拆分规则将有冲突图形（N）分为第一部分掩模图形和第二部分掩模图形；基于第三拆分规则将无冲突图形（M）分为第一尺寸掩模图形和第二尺寸掩模图形；分别将第一尺寸掩模图形和第二尺寸掩模图形中的其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图，具有拆分速度快，拆分之后的两个版图形成的掩模曝光成像分辨率高的优点。

Description

一种适用于双重光刻技术的版图拆分方法、版图拆分装置及电子设备 【技术领域】
本发明涉及集成电路掩模设计领域，尤其涉及一种适用于双重光刻技术的版图拆分方法、版图拆分装置及电子设备。
【背景技术】
集成电路设计发展到如今，器件的特征尺寸越来越小，并趋近于曝光系统的理论极限，光刻后硅片表面的成像将产生严重的畸变，即产生光学邻近效应(Optical Proximity Effect)。随着光刻技术面临更高要求和挑战，人们提出了浸没式光刻(Immersion Lithography)，离轴照明(Off Axis Illumination)，移相掩模(Phase Shift Mask)等各种分辨率增强技术(Resolution Enhancement Technology)来改善成像质量，增强分辨率。
当前主流的1.35NA的193nm浸没式光刻机能够提供36-40nm的半周期(half-pitch)分辨率，可以满足28nm逻辑技术节点的要求，如果小于该尺寸，就需要双重曝光甚至多重曝光技术。双重光刻技术主要的实现方式有两种：一种是曝光—刻蚀—曝光—刻蚀(Lithography-Etch-Lithography-Etch)，LELE的基本原理就是把原来一层光刻图形拆分到两个或多个掩模上，利用多次曝光和刻蚀来实现原来一层设计的图形。另一种是自对准双重成像技术(self-aligned double patterning)，SADP的原理是一次光刻后，再在第一次光刻图形周围通过淀积侧墙，通过刻蚀实现对空间图形的倍频。
在实际应用过程中，由于SADP技术对版图的要求较多，所以LELE工艺使用更加广泛。然而拆分版图有不小的难度，不仅需要解决版图中的冲突位置，还要保持拆分后的版图密度相近，并且还有运行时间和内存的限制，而目前的版图拆分方法都将存在这些缺陷。
【发明内容】
为克服目前版图拆分技术中难以在解决冲突问题的同时保证密度相近性的技术问题，本发明提供一种适用于双重光刻技术的版图拆分方法、版图拆分装置及电子设备。
本发明为了解决上述技术问题，本发明提供一技术方案：一种适用于双重光刻技术的版图拆分方法，用于将初始版图拆 分成第一版图和第二版图，包括如下步骤：提供初始版图，所述初始版图包括多个掩模图形；基于预设的第一拆分规则将所述多个掩模图形拆分为有冲突图形和无冲突图形；基于预设的第二拆分规则将所述有冲突图形分为第一部分掩模图形和第二部分掩模图形，所述第一部分掩模图形和所述第二部分掩模图形中相互的掩模图形之间无冲突；基于预设的第三拆分规则将所述无冲突图形分为至少两种尺寸级别的第一尺寸掩模图形和第二尺寸掩模图形，所述第一尺寸掩模图形的最大尺寸大于所述第二尺寸掩模图形的最大尺寸；以及分别将第一尺寸掩模图形和第二尺寸掩模图形中的其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图。
优选地，分别将第一尺寸掩模图形和第二尺寸掩模图形中的其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图的步骤如下：基于预设的第四拆分规则将所述第一尺寸掩模图形拆分成第三部分掩模图形和第四部分掩模图形，所述第四拆分规则包括：设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值，将小于边阈值或者角阈值的两个掩模图形中的一个定义为第三部分掩模图形、另一个定义为第四部分掩模图形，而将大于边阈值或者角阈值的掩模图形部分归为第三部分掩模图形，另外部分归为第四部分掩模图形；将所述第一部分掩模图形与所述第三部分掩模图形合并以获得初始第一版图，将所述第二部分掩模图形与第四部分掩模图形合并以获得初始第二版图；将第二尺寸掩模图形上任意相邻的两个小于边阈值或者角阈值的掩模图形的一个拆分到初始第一版图，另一个拆分到初始第二版图，而将大于边阈值或者角阈值的掩模图形部分归为初始第一版图，另外部分归为初始第二版图上。
优选地，预设的第一拆分规则如下：设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值，将小于边阈值或者角阈值的掩模图形分为有冲突图形，剩余的分为无冲突图形。
优选地，边阈值的范围是：80-150nm，角阈值的范围是：80-150nm。
优选地，边阈值是：110nm，角阈值是：110nm。
优选地，预设的第二拆分规则如下：设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值，将小于边阈值或者角阈值的两个掩模图形一个定义为第一部分掩模图形、另一个定义为第二部分掩模图形。
优选地，所述掩模图形规则排列，当同一行或者同一列上 的掩模图形相互之间小于边阈值或者角阈值，同一行或者同一列的所有掩模图形归为第一部分掩模或者第二部分掩模。
优选地，预设的第三拆分规则如下：设定面积尺寸阈值或者长度尺寸阈值，将超过面积尺寸阈值或者超过长度尺寸阈值的无冲突图形上的掩模图形归类为第一尺寸掩模图形，其余的归类为第二尺寸掩模图形。
优选地，预设的第三拆分规则如下：设定掩模图形对角线长度阈值，将超过对角线长度阈值的无冲突图形上的掩模图形归类为第一尺寸掩模图形，其余的归类为第二尺寸掩模图形。
优选地，用第一颜色和第二颜色分别对第一版图和第二版图着色。
优选地，用第一颜色和第二颜色分别对第一版图和第二版图着色的方式如下：在合并获得第一版图和第二版图之前首先对第一部分掩模图形用第一颜色着色、对所述第二部分掩模图形用第二颜色着色；然后对第三部分掩模图形和第四部分掩模图形分别用第一颜色和第二颜色着色；最后对拆分到初始第一版图和初始第二版图上的第二尺寸掩模图形着色。
优选地，将有冲突图形中的每个掩模图形用一个圆形作为节点，将有冲突的节点之间用直线连接形成拓扑关系图，基于所述拓扑关系图对所述第一部分掩模图形和所述第二部分掩模图形着色。
为了解决上述技术问题，本发明还提供一种版图拆分装置，用于将初始版图拆分成第一版图和第二版图，包括版图设计模块：用于提供初始版图，所述初始版图包括多个掩模图形；第一拆分模块：基于预设的第一拆分规则将所述多个掩模图形拆分为有冲突图形和无冲突图形；第二拆分模块：基于预设的第二拆分规则将所述有冲突图形分为第一部分掩模图形和第二部分掩模图形，所述第一部分掩模图形和所述第二部分掩模图形中相互的掩模图形之间无冲突；第三拆分模块：基于预设的第三拆分规则将所述无冲突图形分为至少两种尺寸级别的第一尺寸掩模图形和第二尺寸掩模图形，所述第一尺寸掩模图形的最大尺寸大于所述第二尺寸掩模图形的最大尺寸；第四拆分模块：分别拆分第一尺寸掩模图形和第二尺寸掩模图形成两个部分，其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图。
优选地，还包括着色模块，所述着色模块和所述第四拆分模块连接，所述着色模块用于基于第一颜色和第二颜色分别对第一版图和第二版图着色。
为了解决上述技术问题，本发明还提供一种电子设备，其包括一个或多个处理器和存储装置，存储装置，用于存储一个或多个程序，当所述一个或多个程序被所述一个或多个处理器执行，使得所述一个或多个处理器实现如上所述的适用于双重 光刻技术的版图拆分方法。
相对于现有技术，本发明提供的技术方案具有如下有益效果：
1、基于预设的第一拆分规则将所述多个掩模图形拆分为有冲突图形和无冲突图形，再进一步基于两种不同的拆分规则对有冲突图形和无冲突图形并行拆分，基于预设的第二拆分规则将已经拆分出来的有冲突图形进行进一步拆分，以解决冲突的问题，而不是逐一遍历初始版图上所有的掩模图形逐一解决冲突的问题，能很好的提高拆分速度以及拆分的准确性，然后将对无冲突图形拆分获得的第一尺寸掩模图形和第二尺寸掩模图形中的其中一部分与对有冲突图形拆分获得的第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图，能很好的提高拆分速度，基于第三拆分规则将无冲突图形拆分为两种大小尺寸的掩模图形，能进一步基于尺寸范围并行的对无冲突图形进一步拆分以和有冲突的拆分结果进行合并，以最快的速度获得第一版图和第二版图，很好的提高效率。
2、所述第四拆分规则仍然是基于设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值作为拆分方法，使得拆分规则简单化，降低系统运算的复杂程度，提高拆分的效率。
3、设定的第一拆分规则和第二拆分规则均是基于两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值设定，这样在拆分过程中规则相对简单，计算复杂程度低，降低计算器的内存损耗，也进一步提高拆分速度。
4、设定边阈值的范围是：80-150nm，角阈值的范围是：80-150nm，在该阈值范围内拆分出来的掩模图形能满足大部分客户对成像分辨率的要求，提高适用性。
5、所述掩模图形规则排列，当同一行或者同一列上的掩模图形相互之间小于边阈值或者角阈值，同一行或者同一列的所有掩模图形归为第一部分掩模或者第二部分掩模，这样能避免拆分之后过多的考虑放置掩模图形位置的考虑，能很好的避免出错，同时提高效率。
6、利用两种不同的颜色分别对第一版图和第二版图着色，方便将对应的掩模图形载入到掩模板上、避免出现失误。
7、建立关于所述有冲突图形的拓扑关系图，建立的拓扑关系能很好的标定有冲突图形上每个掩模图形的位置信息，以在对第一部分掩模图形和第二部分掩模图形进行着色时，可以基于拓扑关系图参照进行着色，避免着色错误，当出现漏着色或者错误着色时，可以利用拓扑关系图进行核对和校正。
8、本发明提供的适用于双重光刻技术的版图拆分装置和电子设备具有和适用于双重光刻技术的版图拆分方法同样的有 益效果。
【附图说明】
图1是本发明第一实施例提供的适用于双重光刻技术的版图拆分方法的流程示意图；
图2是本发明中步骤S1提供的初始版图的部分区域结构示意图；
图3A是本发明中判定两个掩模图形的边与边之间是否存在冲突的示意图；
图3B是本发明中判定两个掩模图形的角与角之间是否存在冲突的示意图；
图4A是对初始版图执行完步骤S2之后拆分为有冲突图形和无冲突图形的示意图；
图4B是图4A中圈中的矩形框的放大示意图；
图5A是对初始版图执行完步骤S2之后分为有冲突图形和无冲突图形的另一示意图；
图5B是图5A中圈中的矩形框的放大示意图；
图5C是图5A中圈中的另一矩形框的放大示意图；
图6是拆分为第一部分掩模图形和第二部分掩模图形的示意图；
图7是执行完步骤S4之后的版图示意图；
图8A计算非常规图形面积时的面积区域示意图；
图8B计算另一种非常规图形面积时的面积区域示意图；
图9是步骤S5的细节流程图；
图10是对第一版图和第二版图着色的细节流程图；
图11是针对有冲突图形建立的拓扑关系图；
图12是拆分获得的第一版图和第二版图的示意图；
图13是本发明第二实施例中提供的版图拆分装置的模块示意图；
图14是本发明第二实施例中提供的另一版图拆分装置的模块示意图；
图15是本发明第三实施例中提供的电子设备的模块示意图；
图16是适于用来实现本发明实施例的服务器的计算机系统的结构示意图。
【具体实施方式】
为了使本发明的目的，技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请参阅图1，本发明第一实施例提供一种适用于双重光刻技 术的版图拆分方法，用于将初始版图拆分成第一版图和第二版图，包括如下步骤：
S1、提供初始版图，所述初始版图包括多个掩模图形；
S2、基于预设的第一拆分规则将所述多个掩模图形拆分为有冲突图形和无冲突图形；
S3、基于预设的第二拆分规则将所述有冲突图形分为第一部分掩模图形和第二部分掩模图形，所述第一部分掩模图形和所述第二部分掩模图形中相互的掩模图形之间无冲突；
S4、基于预设的第三拆分规则将所述无冲突图形分为至少两种尺寸级别的第一尺寸掩模图形和第二尺寸掩模图形，所述第一尺寸掩模图形的最大尺寸大于所述第二尺寸掩模图形的最大尺寸；及
S5、分别将第一尺寸掩模图形和第二尺寸掩模图形中的其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图。
请参阅图2，在步骤S1中，可以通过图形绘制软件绘制初始版图，初始版图上包括一个或者多个掩模图形10。图形绘制软件可以包括klayout软件。绘制完成的初始版图通常以gds文件格式进行存储。图2中的版图只是从初始版图中截取的其中一个部分。
在步骤S2中，基于预设的第一拆分规则将所述多个掩模图形拆分为有冲突图形和无冲突图形。解决冲突是版图拆分过程中首要考虑的一个任务，在步骤S2中通过对掩模图形先分为有冲突和无冲突两大类型，方便进一步针对有冲突的掩模图形做进一步的去冲突处理，而不是逐个遍历掩模图形，逐个判断是否存在冲突，对存在冲突的掩模图形逐个去冲突的方式，能很好的提高拆分速度。
请参阅图3A和图3B，在一些具体的实施例中，预设的第一拆分规则如下：设定任意相邻的两个掩模图形10边与边之间的边阈值、以及任意相邻的两个掩模图形10的角与角的角阈值，将小于边阈值或者角阈值的掩模图形10分为有冲突图形，剩余的分为无冲突图形。如图3A中所示，任意相邻的两个掩模图形10的两条边之间的距离过近，会影响成像分辨率，认为存在冲突。如图3B中所示，任意相邻的两个掩模图形10之间的两个临近角之间的距离过近，也会影响成像分辨率，认为存在冲突，因此可以通过拆分的方式解决冲突的问题。
需要说明的是，还存在其他方式评判是否存在冲突的方式，比如最小允许周期等。
可选地，边阈值以及角阈值的具体数值的设定主要是根据曝光成像过程中所需要达到的成像分辨率决定的。作为一个举例，边阈值的具体范围是：80-150nm，角阈值的具体范围是：80-150nm。可选地，边阈值的数值还可以是：90nm、110nm、 130nm或者140nm。角阈值的数值还可以是：90nm、110nm、130nm或者140nm。
请参阅图4A和图5A，基于设定的边阈值为110nm、角阈值为110nm将初始版图上的掩模图形10进行分类为有冲突图形和无冲突图形的示意图。在图4A和图5A中，浅灰色标识的区域为无冲突图形，例如框选的区域M的部分，而与该区域M相同颜色的部分也对应为无冲突图形。除了浅灰色标识的部分其他的区域则对应为有冲突图形，对应为黑色标识的部分，例如框选的区域N的部分。而与该区域N相同颜色的部分也对应为有冲突图形。其中图4A和图5A是关于初始版图上的两个不同的区域部分。
为了更好的展示图4A和图5A中有冲突图形和无冲突图形中掩模图形的具体形状以及排布规律，进一步对图4A选择一处有冲突图形区域对其进行放大，如图4B中所示，可以明显看出在图4B所示的掩模图形中，临近的两个掩模图形10之间的角距离为0.089μm(89nm)，小于角阈值110nm，即为有冲突图形。从图5A中选择一处无冲突以及有冲突图形区域进行放大，如附图5B以及图5C中所示，可以明显看出图5B中相邻的掩模图形10之间的间距为0.114μm(114nm)大于边阈值110nm，即为无冲突图形。在图5C中所示的掩模图形10中，相邻的掩模图形10之间的间距为0.07μm(70nm)小于边阈值110nm，即为有冲突图形。
在上述步骤S3中，预设的第二拆分规则为：设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值，将小于边阈值或者角阈值的两个掩模图形一个定义为第一部分掩模图形、另一个定义为第二部分掩模图形。
在一些具体的实施例中，如果同一行或者同一列上的掩模图形相互之间小于边阈值或者角阈值，同一行或者同一列的可以都归为第一部分掩模或者第二部分掩模。当然，还可以是依次排序顺序，将相邻的两个掩模图形中的一个归为第一部分掩模图形，另外一个归为第二部分掩模图形。
在本步骤S3中，设定的边阈值和角阈值的数值可以和上述步骤S2中的相同或者不相同都可以。
请参阅图6，通常掩模图形10是规则性排列的，如果相邻的两行或者两列之间的掩模图形10存在冲突，那么将这两行中的一行或者一列拆分作为第一部分掩模图形，另一行或者另一列作为第二部分掩模图形即可。可选地，奇数行上的掩模图形10作为第一部分掩模图形，偶数行上的掩模图形10作为第二部分掩模图形。这样不但可以解决冲突问题，还能很好的保证拆分之后的第一部分掩模图形中掩模图形的分布密度和第二部分掩模图形的分布密度相近，保证两者的曝光性能。如果这样拆分无法解决冲突问题，可以在后续拆分获得第一版图或者第二版图之后，进行临近效应校正(OPC)阶段进一步调整即可。比如 图6中，奇数行的掩模图形归为第一部分掩模图形，偶数行的掩模图形归为第二部分掩模图形。
请参阅图7，在步骤S4中，预设的第三拆分规则如下：设定面积尺寸阈值或者长度尺寸阈值，将超过面积尺寸阈值或者超过长度尺寸阈值的无冲突图形上的掩模图形归类为第一尺寸掩模图形，其余的归类为第二尺寸掩模图形。如附图7中所示，区域O对应的掩模图形为第一尺寸掩模图形，区域P中的掩模图形相对较小，对应为第二尺寸掩模图形。其中P1区域对应为区域P的矩形框选区域的放大图，其中O1对应为区域O的放大图。
请参阅图8A和图8B，需要进一步说明的是当掩模图形为非常规形状，比如不是常规的长方形、正方形时，为了方便计算，其边长的长度尺寸的计算方式可以如下：将该掩模图形对应的X轴方向上的起始坐标和终点坐标，Y轴方向上的起始坐标和终点坐标，将该四个坐标对应的顶点连接围合形成的矩形框的边长的长度则对应为该掩模图形的最大边长长度。这样可以不用遍历每一条边的边长，能很好的提高速度。
还需要说明的是，除了设定面积尺寸阈值或者长度尺寸面积阈值之外，还可以设定对角线长度阈值或者其他的评判指标阈值。
需要说明的是，步骤S3和步骤S4可以同时进行，或者先执行步骤S3再执行步骤S4、又或者先执行步骤S4再执行步骤S3均是可以的，两种没有先后的顺序限定。优选为两者同时进行，这样能很好的加快运算速度。
在步骤S5中，当基于步骤S4中已经将无冲突图形分为两个不同尺寸的类别掩模图形的基础上，可以对第一尺寸掩模图形和第二尺寸掩模图形并行处理，同时对第一尺寸掩模图形和第二尺寸掩模图形进行拆分操作，而不是逐一对无冲突图形进行拆分，能很好的提高拆分速度。
请参阅图9，分别将第一尺寸掩模图形和第二尺寸掩模图形中的其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图的步骤如下：
S51、基于预设的第四拆分规则将所述第一尺寸掩模图形拆分成第三部分掩模图形和第四部分掩模图形，所述第四拆分规则包括：设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值，将小于边阈值或者角阈值的两个掩模图形中的一个定义为第三部分掩模图形、另一个定义为第四部分掩模图形，而将大于边阈值或者角阈值的掩模图形部分归为第三部分掩模图形，另外部分归为第四部分掩模图形；
S52、将所述第一部分掩模图形与所述第三部分掩模图形合并以获得初始第一版图，将所述第二部分掩模图形与第四部分掩模图形合并以获得初始第二版图；
S53、将第二尺寸掩模图形上任意相邻的两个小于边阈值或者角阈值的掩模图形的一个拆分到初始第一版图，另一个拆分到初始第二版图，而将大于边阈值或者角阈值的掩模图形部分归为初始第一版图，另外部分归为初始第二版图上。
在步骤S51中，将大于边阈值或者角阈值的掩模图形部分归为第三部分掩模图形，另外部分归为第四部分掩模图形的过程中，可以是以间隔的顺序将其中一个拆分为第三部分掩模图形，另一个拆分为第四部分掩模图形。还可以是其他的方式，保证拆分之后图形之间相互无冲突即可。
在步骤S53中将大于边阈值或者角阈值的掩模图形部分归为初始第一版图，另外部分归为初始第二版图上可以是以间隔的顺序将其中一个拆分为第三部分掩模图形，另一个拆分为第四部分掩模图形。还可以是其他的方式，保证拆分之后图形之间相互无冲突即可。
为了在更加顺利将拆分的第一版图和第二版图上的图形顺利载入到掩模板上以制备获得的两块掩模，进一步需要对属于第一版图的掩模图形和第二版图的掩模图形着色。即，分别用第一颜色和第二颜色分别对第一版图和第二版图着色。
请参阅图10，用第一颜色和第二颜色分别对第一版图和第二版图着色的方式包括如下步骤：
T11、在合并获得第一版图和第二版图之前首先对第一部分掩模图形用第一颜色着色、对所述第二部分掩模图形用第二颜色着色；
T12、然后对第三部分掩模图形和第四部分掩模图形分别用第一颜色和第二颜色着色；
T13、最后对拆分到初始第一版图和初始第二版图上的第二尺寸掩模图形着色。
可以在执行步骤S3之后执行步骤T11。在执行步骤S51之后执行步骤T12。在执行步骤S53之后执行步骤T13。
在具体的实施例中，可以通过如下方式对第一部分掩模图形用第一颜色着色、对所述第二部分掩模图形用第二颜色着色：将有冲突图形中的每个掩模图形用一个圆形作为节点，将有冲突的节点之间用直线连接形成拓扑关系图，基于所述拓扑关系图对所述第一部分掩模图形和所述第二部分掩模图形着色。
请结合图11，为针对图6的掩模图形建立的拓扑关系图。建立的拓扑关系能很好的标定有冲突图形上每个掩模图形的位置信息，以在对第一部分掩模图形和第二部分掩模图形进行着色时，可以基于拓扑关系图参照进行着色，避免着色错误，当出现漏着色或者错误着色时，可以利用拓扑关系图进行核对和校正。
请参阅图12，区域A为针对图4A和图5A组合成的初始版图进行拆分之后并进行上色的第一版图和第二版图。为了更清楚 的展示，其中区域B、区域C、区域D和区域E对应为区域A中框选矩形区域的放大图，区域B、区域C也是基于步骤S4拆分成的第二尺寸掩模图形。从区域B、区域C中可以明显看出第二尺寸掩模图形以间隔的方式进行两种不同颜色的着色，其中同一种颜色(比如浅色)着色的对应为第一版图，另一种较深颜色着色的对应为第二版图。
其中区域D是基于步骤S2拆分成的无冲突图形，其中在区域D又进一步基于步骤S4拆分成第一尺寸掩模图形和第二尺寸掩模图形，其中细长条形的掩模图形对应为第一尺寸掩模图形，小矩形的掩模图形对应为第二尺寸掩模图形。其中在区域D中第一尺寸掩模图形又基于步骤S51分成第三部分掩模图形和第四部分掩模图形，其中在区域D中，浅颜色的掩模图形对应为第三部分掩模图形，深颜色的掩模图形对应为第四部分掩模图形。在区域D中又将第二尺寸掩模图形以步骤S53的方式以浅颜色和深颜色进行着色，其中浅颜色作为第一版图，深颜色部分作为第二版图。从区域E中可以明显看出针对图5A中的有冲突图形按照步骤S3进行拆分之后以深颜色和浅颜色两种不同颜色的着色，其中同一种颜色(比如浅色)着色的对应为第一版图，另一种较深颜色着色的对应为第二版图。
图12中区域B-区域E是针对初始版图执行完步骤S1-步骤S5之后的获得第一版图和第二版图的部分解释说明，其中浅颜色上色的都是第一版图，而深颜色着色的都是第二版图。
请参阅图13，本发明第二实施例提供一种版图拆分装置100，用于对待优化掩模进行优化，其包括版图设计模块30、第一拆分模块40、第二拆分模块50、第三拆分模块60、第四拆分模块70。
版图设计模块30：用于提供初始版图，所述初始版图包括多个掩模图形；
第一拆分模块40：基于预设的第一拆分规则将所述多个掩模图形拆分为有冲突图形和无冲突图形；
第二拆分模块50：基于预设的第二拆分规则将所述有冲突图形分为第一部分掩模图形和第二部分掩模图形，所述第一部分掩模图形和所述第二部分掩模图形中相互的掩模图形之间无冲突；
第三拆分模块60：基于预设的第三拆分规则将所述无冲突图形分为至少两种尺寸级别的第一尺寸掩模图形和第二尺寸掩模图形，所述第一尺寸掩模图形的最大尺寸大于所述第二尺寸掩模图形的最大尺寸；
第四拆分模块70：分别拆分第一尺寸掩模图形和第二尺寸掩模图形成两个部分，其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图。
请参阅图14，版图拆分装置100还包括着色模块90，所述着色模块90和所述第四拆分模块70连接，第四拆分模块70将获得的第一版图和第二版图提供给着色模块90，所述着色模块90用于基于第一颜色和第二颜色分别对第一版图和第二版图着色。
请参阅图15，本发明第三实施例提供电子设备200，其包括一个或多个处理器201和存储装置202，
存储装置202，用于存储一个或多个程序，当所述一个或多个程序被所述一个或多个处理器201执行，使得所述一个或多个处理器201实现如第一实施例所提供的掩模优化方法。
下面参考图16，其示出了适于用来实现本发明实施例的终端设备/服务器的计算机系统800的结构示意图。图16示出的终端设备/服务器仅仅是一个示例，不应对本申请实施例的功能和使用范围带来任何限制。
如图16所示，计算机系统800包括中央处理单元(CPU)801，其可以根据存储在只读存储器(ROM)802中的程序或者从存储部分808加载到随机访问记忆体(RAM)803中的程序而执行各种适当的动作和处理。在RAM 803中，还存储有系统800操作所需的各种程序和数据。CPU 801、ROM 802以及RAM 803通过总线804彼此相连。输入/输出(I/O)界面805也连接至总线804。
以下部件连接至I/O界面805：包括键盘、鼠标等的输入部分806；包括诸如阴极射线管(CRT)、液晶显示器(LCD)等以及扬声器等的输出部分807；包括硬盘等的存储部分808；以及包括诸如LAN卡、调制解调器等的网络界面卡的通信部分809。通信部分809经由诸如因特网的网络执行通信处理。驱动器810也根据需要连接至I/O界面805。可拆卸介质811，诸如磁盘、光盘、磁光盘、半导体存储器等等，根据需要安装在驱动器810上，以便于从其上读出的计算机程序根据需要被安装入存储部分808。
根据本公开的实施例，上文参考流程图描述的过程可以被实现为计算机软件程序。例如，本公开的实施例包括一种计算机程序产品，其包括承载在计算机可读介质上的计算机程序，该计算机程序包含用于执行流程图所示的方法的程序代码。在这样的实施例中，该计算机程序可以通过通信部分809从网络上被下载和安装，和/或从可拆卸介质811被安装。在该计算机程序被中央处理单元(CPU)801执行时，执行本发明的方法中限定的上述功能。需要说明的是，本发明所述的计算机可读介质可以是计算机可读信号介质或者计算机可读存储介质或者是上述两者的任意组合。计算机可读存储介质例如可以是—但不限于—电、磁、光、电磁、红外线、或半导体的系统、装置或器件，或者任意以上的组合。计算机可读存储介质的更具体的例子可以包括但不限于：具有一个或多个导线的电连接、便携式计算机磁盘、硬盘、随机访问记忆体(RAM)、只读存储器(ROM)、可擦式可编程只读存储器(EPROM或闪存)、光纤、便携式紧凑磁 盘只读存储器(CD-ROM)、光存储器件、磁存储器件、或者上述的任意合适的组合。
可以以一种或多种程序设计语言或其组合来编写用于执行本申请的操作的计算机程序代码，所述程序设计语言包括面向对象的程序设计语言—诸如Java、Smalltalk、C++，还包括常规的过程式程序设计语言—诸如“C”语言或类似的程序设计语言。程序代码可以完全地在用户计算机上执行、部分地在用户计算机上执行、作为一个独立的软件包执行、部分在用户计算机上部分在远程计算机上执行、或者完全在远程计算机或服务器上执行。在涉及远程计算机的情形中，远程计算机可以通过任意种类的网络——包括局域网(LAN)或广域网(WAN)—连接到用户计算机，或者，可以连接到外部计算机(例如利用因特网服务提供商来通过因特网连接)。
附图中的流程图和框图，图示了按照本发明各种实施例的系统、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段、或代码的一部分，该模块、程序段、或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个接连地表示的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图和/或流程图中的每个方框、以及框图和/或流程图中的方框的组合，可以用执行规定的功能或操作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。
描述于本发明实施例中所涉及到的单元可以通过软件的方式实现，也可以通过硬件的方式来实现。作为另一方面，本发明还提供了一种计算机可读介质，该计算机可读介质可以是上述实施例中描述的装置中所包含的；也可以是单独存在，而未装配入该装置中。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的原则之内所作的任何修改，等同替换和改进等均应包含本发明的保护范围之内。

Claims (15)

  1. 一种适用于双重光刻技术的版图拆分方法，用于将初始版图拆分成第一版图和第二版图，其特征在于，包括如下步骤：
    提供初始版图，所述初始版图包括多个掩模图形；
    基于预设的第一拆分规则将所述多个掩模图形拆分为有冲突图形和无冲突图形；
    基于预设的第二拆分规则将所述有冲突图形分为第一部分掩模图形和第二部分掩模图形，所述第一部分掩模图形和所述第二部分掩模图形中相互的掩模图形之间无冲突；
    基于预设的第三拆分规则将所述无冲突图形分为至少两种尺寸级别的第一尺寸掩模图形和第二尺寸掩模图形，所述第一尺寸掩模图形的最大尺寸大于所述第二尺寸掩模图形的最大尺寸；以及
    分别将第一尺寸掩模图形和第二尺寸掩模图形中的其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图。
  2. 如权利要求1所述的适用于双重光刻技术的版图拆分方法，其特征在于，分别将第一尺寸掩模图形和第二尺寸掩模图形中的其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图的步骤如下：
    基于预设的第四拆分规则将所述第一尺寸掩模图形拆分成第三部分掩模图形和第四部分掩模图形，所述第四拆分规则包括：设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值，将小于边阈值或者角阈值的两个掩模图形中的一个定义为第三部分掩模图形、另一个定义为第四部分掩模图形，而将大于边阈值或者角阈值的掩模图形部分归为第三部分掩模图形，另外部分归为第四部分掩模图形；
    将所述第一部分掩模图形与所述第三部分掩模图形合并以获得初始第一版图，将所述第二部分掩模图形与第四部分掩模图形合并以获得初始第二版图；
    将第二尺寸掩模图形上任意相邻的两个小于边阈值或者角阈值的掩模图形的一个拆分到初始第一版图，另一个拆分到初始第二版图，而将大于边阈值或者角阈值的掩模图形部分归为初始第一版图，另外部分归为初始第二版图上。
  3. 如权利要求1所述的适用于双重光刻技术的版图拆分方法，其特征在于，预设的第一拆分规则如下：
    设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值，将小于边阈值或者角阈值的掩模图形分为有冲突图形，剩余的分为无冲突图形。
  4. 如权利要求3所述的适用于双重光刻技术的版图拆分方法，其特征在于，边阈值的范围是：80-150nm，角阈值的范围是：80-150nm。
  5. 如权利要求4所述的适用于双重光刻技术的版图拆分方法，其特征在于，边阈值是：110nm，角阈值是：110nm。
  6. 如权利要求1所述的适用于双重光刻技术的版图拆分方法，其特征在于，预设的第二拆分规则如下：
    设定任意相邻的两个掩模图形边与边之间的边阈值、以及任意相邻的两个掩模图形的角与角的角阈值，将小于边阈值或者角阈值的两个掩模图形一个定义为第一部分掩模图形、另一个定义为第二部分掩模图形。
  7. 如权利要求6所述的适用于双重光刻技术的版图拆分方法，其特征在于，所述掩模图形规则排列，当同一行或者同一列上的掩模图形相互之间小于边阈值或者角阈值，同一行或者同一列的所有掩模图形归为第一部分掩模或者第二部分掩模。
  8. 如权利要求1所述的适用于双重光刻技术的版图拆分方法，其特征在于，预设的第三拆分规则如下：
    设定面积尺寸阈值或者长度尺寸阈值，将超过面积尺寸阈值或者超过长度尺寸阈值的无冲突图形上的掩模图形归类为第一尺寸掩模图形，其余的归类为第二尺寸掩模图形。
  9. 如权利要求1所述的适用于双重光刻技术的版图拆分方法，其特征在于，预设的第三拆分规则如下：
    设定掩模图形对角线长度阈值，将超过对角线长度阈值的无冲突图形上的掩模图形归类为第一尺寸掩模图形，其余的归类为第二尺寸掩模图形。
  10. 如权利要求2所述的适用于双重光刻技术的版图拆分方法，其特征在于，用第一颜色和第二颜色分别对第一版图和第二版图着色。
  11. 如权利要求10所述的适用于双重光刻技术的版图拆分方法，其特征在于，用第一颜色和第二颜色分别对第一版图和第二版图着色的方式如下：
    在合并获得第一版图和第二版图之前首先对第一 部分掩模图形用第一颜色着色、对所述第二部分掩模图形用第二颜色着色；
    然后对第三部分掩模图形和第四部分掩模图形分别用第一颜色和第二颜色着色；
    最后对拆分到初始第一版图和初始第二版图上的第二尺寸掩模图形着色。
  12. 如权利要求11所述的适用于双重光刻技术的版图拆分方法，其特征在于，将有冲突图形中的每个掩模图形用一个圆形作为节点，将有冲突的节点之间用直线连接形成拓扑关系图，基于所述拓扑关系图对所述第一部分掩模图形和所述第二部分掩模图形着色。
  13. 一种版图拆分装置，其特征在于，用于将初始版图拆分成第一版图和第二版图，包括：
    版图设计模块：用于提供初始版图，所述初始版图包括多个掩模图形；
    第一拆分模块：基于预设的第一拆分规则将所述多个掩模图形拆分为有冲突图形和无冲突图形；
    第二拆分模块：基于预设的第二拆分规则将所述有冲突图形分为第一部分掩模图形和第二部分掩模图形，所述第一部分掩模图形和所述第二部分掩模图形中相互的掩模图形之间无冲突；
    第三拆分模块：基于预设的第三拆分规则将所述无冲突图形分为至少两种尺寸级别的第一尺寸掩模图形和第二尺寸掩模图形，所述第一尺寸掩模图形的最大尺寸大于所述第二尺寸掩模图形的最大尺寸；
    第四拆分模块：分别拆分第一尺寸掩模图形和第二尺寸掩模图形成两个部分，其中一部分与第一部分掩模图形合并以获得第一版图、另一部分与第二部分掩模图形合并以获得第二版图。
  14. 如权利要求13所述的版图拆分装置，其特征在于，还包括着色模块，所述着色模块和所述第四拆分模块连接，所述着色模块用于基于第一颜色和第二颜色分别对第一版图和第二版图着色。
  15. 一种电子设备，其特征在于，其包括一个或多个处理器和存储装置，
    存储装置，用于存储一个或多个程序，当所述一个或多个程序被所述一个或多个处理器执行，使得所述一个或多个处理器实现如权利要求1所述的适用于双重光刻技术的版图拆分方法。
PCT/CN2022/098426 2022-01-19 2022-06-13 一种适用于双重光刻技术的版图拆分方法、版图拆分装置及电子设备 WO2023137952A1 (zh)

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