WO2023130198A1 - Détecteurs de rayonnement et procédés de fabrication - Google Patents

Détecteurs de rayonnement et procédés de fabrication Download PDF

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Publication number
WO2023130198A1
WO2023130198A1 PCT/CN2022/070036 CN2022070036W WO2023130198A1 WO 2023130198 A1 WO2023130198 A1 WO 2023130198A1 CN 2022070036 W CN2022070036 W CN 2022070036W WO 2023130198 A1 WO2023130198 A1 WO 2023130198A1
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WO
WIPO (PCT)
Prior art keywords
substrate
connection regions
absorption layer
forming
radiation absorption
Prior art date
Application number
PCT/CN2022/070036
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English (en)
Inventor
Peiyan CAO
Yurun LIU
Original Assignee
Shenzhen Xpectvision Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Xpectvision Technology Co., Ltd. filed Critical Shenzhen Xpectvision Technology Co., Ltd.
Priority to PCT/CN2022/070036 priority Critical patent/WO2023130198A1/fr
Priority to CN202280084588.6A priority patent/CN118541775A/zh
Priority to TW111146086A priority patent/TW202329482A/zh
Publication of WO2023130198A1 publication Critical patent/WO2023130198A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures

Definitions

  • a radiation detector is a device that measures a property of a radiation. Examples of the property may include a spatial distribution of the intensity, phase, and polarization of the radiation.
  • the radiation measured by the radiation detector may be a radiation that has transmitted through an object.
  • the radiation measured by the radiation detector may be electromagnetic radiation such as infrared light, visible light, ultraviolet light, X-ray, or ⁇ -ray.
  • the radiation may be of other types such as ⁇ -rays and ⁇ -rays.
  • An imaging system may include one or more image sensors each of which may have one or more radiation detectors.
  • M being a positive integer
  • the M connection regions comprise a degenerate semiconductor.
  • the radiation absorption layer is formed by epitaxial growth on the substrate.
  • the substrate comprises GaAs
  • the radiation absorption layer comprises CdZnTe (CZT) .
  • the M connection regions are discrete from one another.
  • no grain boundary is between any connection region of the M connection regions and the substrate.
  • the method further comprises forming an electronics layer.
  • Each electrode of the M electrodes and a connection region of the M connection regions corresponding to said each electrode are disposed between and electrically connect together (A) the radiation absorption layer and (B) the electronics layer, and the electronics layer is configured to process electrical signals transmitted to the electronics layer from the radiation absorption layer via the M connection regions and the M electrodes.
  • said forming the electronics layer comprises bonding the electronics layer to the substrate.
  • the radiation absorption layer is configured to generate electrical signals in response to X-rays incident on the radiation absorption layer.
  • said forming the M connection regions is performed before said forming the radiation absorption layer is performed.
  • said forming the M connection regions is performed after said forming the radiation absorption layer is performed.
  • said forming the M connection regions comprises: doping M substrate regions of the substrate; and then annealing the substrate causing the M substrate regions to become the M connection regions respectively.
  • said doping the M substrate regions is performed by ion implantation.
  • said doping the M substrate regions is performed by diffusion doping.
  • said forming the M electrodes comprises thinning the substrate from a surface of the substrate opposite from the radiation absorption layer.
  • said thinning comprises performing chemical mechanical polishing.
  • said thinning comprises performing mechanical polishing.
  • said thinning does not expose the M connection regions to a surrounding ambient
  • said forming the M electrodes further comprises: after said thinning is performed, forming M recesses into the substrate such that the M connection regions are exposed to the surrounding ambient via the M recesses respectively and filling the M recesses with materials resulting in the M electrodes respectively.
  • the materials comprise gold, germanium, and nickel.
  • said thinning exposes the M connection regions to a surrounding ambient
  • said forming the M electrodes further comprises, after said thinning is performed, depositing materials on the M connection regions resulting in the M electrodes respectively.
  • Fig. 1 schematically shows a radiation detector, according to an embodiment.
  • Fig. 2 schematically shows a simplified cross-sectional view of the radiation detector, according to an embodiment.
  • Fig. 3 schematically shows a detailed cross-sectional view of the radiation detector, according to an embodiment.
  • Fig. 4 schematically shows a detailed cross-sectional view of the radiation detector, according to an alternative embodiment.
  • Fig. 5 –Fig. 11 schematically show a fabrication process of a radiation detector, according to an embodiment.
  • Fig. 12 shows a flowchart generalizing the fabrication process of Fig. 5 –Fig. 11, according to an embodiment.
  • Fig. 13 –Fig. 16 schematically show an alternative fabrication process of a radiation detector, according to an embodiment.
  • Fig. 1 schematically shows a radiation detector 100, as an example.
  • the radiation detector 100 may include an array of pixels 150 (also referred to as sensing elements 150) .
  • the array may be a rectangular array (as shown in Fig. 1) , a honeycomb array, a hexagonal array, or any other suitable array.
  • the array of pixels 150 in the example of Fig. 1 has 4 rows and 7 columns; however, in general, the array of pixels 150 may have any number of rows and any number of columns.
  • Each pixel 150 may be configured to detect radiation from a radiation source (not shown) incident thereon and may be configured to measure a characteristic (e.g., the energy of the particles, the wavelength, and the frequency) of the radiation.
  • a radiation may include radiation particles such as photons (X-rays, gamma rays, etc. ) and subatomic particles (alpha particles, beta particles, etc. )
  • Each pixel 150 may be configured to count numbers of particles of radiation incident thereon whose energy falls in a plurality of bins of energy, within a period of time. All the pixels 150 may be configured to count the numbers of particles of radiation incident thereon within a plurality of bins of energy within the same period of time. When the incident particles of radiation have similar energy, the pixels 150 may be simply configured to count numbers of particles of radiation incident thereon within a period of time, without measuring the energy of the individual particles of radiation.
  • Each pixel 150 may have its own analog-to-digital converter (ADC) configured to digitize an analog signal representing the energy of an incident particle of radiation into a digital signal, or to digitize an analog signal representing the total energy of a plurality of incident particles of radiation into a digital signal.
  • ADC analog-to-digital converter
  • the pixels 150 may be configured to operate in parallel. For example, when one pixel 150 measures an incident particle of radiation, another pixel 150 may be waiting for a particle of radiation to arrive. The pixels 150 may not have to be individually addressable.
  • the radiation detector 100 described here may have applications such as in an X-ray telescope, X-ray mammography, industrial X-ray defect detection, X-ray microscopy or microradiography, X-ray casting inspection, X-ray non-destructive testing, X-ray weld inspection, X-ray digital subtraction angiography, etc. It may be suitable to use this radiation detector 100 in place of a photographic plate, a photographic film, a PSP plate, an X-ray image intensifier, a scintillator, or another semiconductor X-ray detector.
  • Fig. 2 schematically shows a simplified cross-sectional view of the radiation detector 100 of Fig. 1 along a line 2-2, according to an embodiment.
  • the radiation detector 100 may include a radiation absorption layer 110 and an electronics layer 120 (which may include one or more ASICs or application-specific integrated circuits) for processing or analyzing electrical signals which incident radiation generates in the radiation absorption layer 110.
  • the radiation detector 100 may or may not include a scintillator (not shown) .
  • the radiation absorption layer 110 may include a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof.
  • the semiconductor material may have a high mass attenuation coefficient for the radiation of interest.
  • the radiation absorption layer 110 may include one or more diodes (e.g., p-i-n or p-n) formed by a first doped region 111, one or more discrete regions 114 of a second doped region 113.
  • the second doped region 113 may be separated from the first doped region 111 by an optional intrinsic region 112.
  • the discrete regions 114 may be separated from one another by the first doped region 111 or the intrinsic region 112.
  • the first doped region 111 and the second doped region 113 may have opposite types of doping (e.g., region 111 is p-type and region 113 is n-type, or region 111 is n-type and region 113 is p-type) .
  • each of the discrete regions 114 of the second doped region 113 forms a diode with the first doped region 111 and the optional intrinsic region 112.
  • the radiation absorption layer 110 has a plurality of diodes (more specifically, 7 diodes corresponding to 7 pixels 150 of one row in the array of Fig. 1, of which only 2 pixels 150 are labeled in Fig. 3 for simplicity) .
  • the plurality of diodes may have an electrical contact 119A as a shared (common) electrode.
  • the first doped region 111 may also have discrete portions.
  • the electronics layer 120 may include an electronic system 121 suitable for processing or interpreting signals generated by the radiation incident on the radiation absorption layer 110.
  • the electronic system 121 may include an analog circuitry such as a filter network, amplifiers, integrators, and comparators, or a digital circuitry such as a microprocessor, and memory.
  • the electronic system 121 may include one or more ADCs (analog to digital converters) .
  • the electronic system 121 may include components shared by the pixels 150 or components dedicated to a single pixel 150.
  • the electronic system 121 may include an amplifier dedicated to each pixel 150 and a microprocessor shared among all the pixels 150.
  • the electronic system 121 may be electrically connected to the pixels 150 by vias 131. Space among the vias may be filled with a filler material 130, which may increase the mechanical stability of the connection of the electronics layer 120 to the radiation absorption layer 110. Other bonding techniques are possible to connect the electronic system 121 to the pixels 150 without using the vias 131.
  • the radiation absorption layer 110 including diodes
  • particles of the radiation may be absorbed and generate one or more charge carriers (e.g., electrons, holes) by a number of mechanisms.
  • the charge carriers may drift to the electrodes of one of the diodes under an electric field.
  • the electric field may be an external electric field.
  • the electrical contact 119B may include discrete portions each of which is in electrical contact with the discrete regions 114.
  • the term “electrical contact” may be used interchangeably with the word “electrode.
  • the charge carriers may drift in directions such that the charge carriers generated by a single particle of the radiation are not substantially shared by two different discrete regions 114 ( “not substantially shared” here means less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete regions 114 than the rest of the charge carriers) .
  • Charge carriers generated by a particle of the radiation incident around the footprint of one of these discrete regions 114 are not substantially shared with another of these discrete regions 114.
  • a pixel 150 associated with a discrete region 114 may be an area around the discrete region 114 in which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%of) charge carriers generated by a particle of the radiation incident therein flow to the discrete region 114. Namely, less than 2%, less than 1%, less than 0.1%, or less than 0.01%of these charge carriers flow beyond the pixel 150.
  • Fig. 4 schematically shows a detailed cross-sectional view of the radiation detector 100 of Fig. 1 along the line 2-2, according to an alternative embodiment.
  • the radiation absorption layer 110 may include a resistor of a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof, but does not include a diode.
  • the semiconductor material may have a high mass attenuation coefficient for the radiation of interest.
  • the electronics layer 120 of Fig. 4 is similar to the electronics layer 120 of Fig. 3 in terms of structure and function.
  • the radiation When the radiation hits the radiation absorption layer 110 including the resistor but not diodes, it may be absorbed and generate one or more charge carriers by a number of mechanisms.
  • a particle of the radiation may generate 10 to 100,000 charge carriers.
  • the charge carriers may drift to the electrical contacts 119A and 119B under an electric field.
  • the electric field may be an external electric field.
  • the electrical contact 119B may include discrete portions.
  • the charge carriers may drift in directions such that the charge carriers generated by a single particle of the radiation are not substantially shared by two different discrete portions of the electrical contact 119B ( “not substantially shared” here means less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete portions than the rest of the charge carriers) .
  • a pixel 150 associated with a discrete portion of the electrical contact 119B may be an area around the discrete portion in which substantially all (more than 98%, more than 99.5%, more than 99.9%or more than 99.99%of) charge carriers generated by a particle of the radiation incident therein flow to the discrete portion of the electrical contact 119B. Namely, less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow beyond the pixel associated with the one discrete portion of the electrical contact 119B.
  • FIG. 5 –Fig. 11 schematically show a fabrication process of a radiation detector 1100 (Fig. 11) , according to an embodiment (cross-sectional views are shown) .
  • the fabrication process may start with a substrate 500.
  • the substrate 500 may include a semiconductor (e.g., gallium arsenide GaAs) .
  • M connection regions 510 may be formed on the substrate 500 (M is a positive integer) .
  • Fig. 6 shows 7 connection regions 510 for illustration.
  • the M connection regions 510 may be formed by doping M substrate regions (not shown) of the substrate 500, and then annealing the substrate 500 causing the M substrate regions to become the M connection regions 510 respectively.
  • the doping of the M substrate regions may be performed by ion implantation.
  • the doping of the M substrate regions may be performed by diffusion doping.
  • the doping concentrations of the M substrate regions may be so high that the resulting M connection regions 510 act more like a metal than as a semiconductor electrically.
  • the M connection regions 510 include a degenerate semiconductor.
  • the M connection regions 510 may be discrete from one another. In other words, no two connection regions of the M connection regions 510 are in direct physical contact with each other.
  • connection region 510 there is no grain boundary between any connection region 510 and the substrate 500.
  • a radiation absorption layer 700 may be formed on the substrate 500 such that the M connection regions 510 are sandwiched between the radiation absorption layer 700 and the substrate 500.
  • the radiation absorption layer 700 may be formed by epitaxial growth on the substrate 500.
  • the radiation absorption layer 700 may include a semiconductor whose lattice is similar to the lattice of the substrate 500.
  • the radiation absorption layer 700 may include cadmium zinc telluride (CdZnTe or just CZT for short)
  • the substrate 500 may include GaAs. So, the radiation absorption layer 700 may be formed by epitaxial growth of CZT on the GaAs substrate 500.
  • the M connection regions 510 may be formed before the radiation absorption layer 700 (Fig. 7) is formed.
  • CZT may be epitaxially grown on the substrate 500 of Fig. 6 resulting in the structure of Fig. 7.
  • the M connection regions 510 may be formed after the radiation absorption layer 700 is formed.
  • CZT may be epitaxially grown on the substrate 500 of Fig. 5, and then the M connection regions 510 may be formed by implanting dopants at a certain depth followed by an annealing step, resulting in the structure of Fig. 7.
  • the radiation absorption layer 700 may generate electrical signals in response to X-rays incident on the radiation absorption layer 700.
  • M electrodes 530 may be formed in electrical connection to the M connection regions 510 respectively.
  • the substrate 500 may be thinned from a surface 502 of the substrate 500 opposite from the radiation absorption layer 700, resulting in the structure of Fig. 8.
  • the thinning of the substrate 500 may be performed by chemical mechanical polishing of the surface 502.
  • the thinning of the substrate 500 be performed by mechanical polishing of the surface 502.
  • the thinning of the substrate 500 may not expose the M connection regions 510 to the surrounding ambient as shown in Fig 8.
  • M recesses 520 may be formed into the substrate 500 such that the M connection regions 510 are exposed to the surrounding ambient via the M recesses 520 respectively.
  • the M recesses 520 may be filled with materials resulting in the M electrodes 530 respectively as shown in Fig. 10.
  • the materials used to fill the M recesses 520 may include gold, germanium, and nickel.
  • the M electrodes 530 are formed by first thinning the substrate 500 of Fig. 7 without exposing the M connection regions 510 to the surrounding ambient.
  • the substrate 500 of Fig. 7 may be thinned so that the M connection regions 510 are exposed to the surrounding ambient (not shown) , and then materials may be deposited on the M connection regions 510 resulting in the M electrodes respectively.
  • an electronics layer 1120 may be formed such that (1) each electrode 530 and the corresponding connection region 510 are disposed between and electrically connect together (A) the radiation absorption layer 700 and (B) the electronics layer 1120, and (2) the electronics layer 1120 is configured to process electrical signals transmitted to the electronics layer 1120 from the radiation absorption layer 700 via the M connection regions 510 and the M electrodes 530.
  • the electronics layer 1120 may be formed by bonding the electronics layer 1120 to the substrate 500.
  • the radiation absorption layer 700 and the electronics layer 1120 of the radiation detector 1100 may be respectively similar to the radiation absorption layer 110 and the electronics layer 120 of the radiation detector 100 of Fig. 2 –Fig 4 in terms of structure and function.
  • each electrode 530 and the corresponding connection region 510 of the radiation detector 1100 may be similar to an electrical contact 119B of the radiation detector 100 of Fig. 3 -Fig. 4 in terms of structure and function.
  • the radiation detector 1100 of Fig. 11 may be similar to the radiation detector 100 of Fig. 1 –Fig. 4 in terms of structure and function.
  • Fig. 12 shows a flowchart 1200 generalizing the fabrication process of the radiation detector 1100 of Fig. 11, according to an embodiment.
  • Step 1210 includes forming M connection regions on a substrate, M being a positive integer.
  • M being a positive integer.
  • the M connection regions 510 are formed on the substrate 500.
  • M is a positive integer.
  • Step 1220 includes forming a radiation absorption layer on the substrate.
  • the M connection regions are sandwiched between the radiation absorption layer and the substrate.
  • the radiation absorption layer 700 is formed on the substrate 500, and the M connection regions 510 are sandwiched between the radiation absorption layer 700 and the substrate 500.
  • Step 1230 includes forming M electrodes respectively in electrical connection to the M connection regions.
  • the M electrodes 530 are formed respectively in electrical connection to the M connection regions 510.
  • step 1210 may be performed after step 1220 is performed as mentioned in the embodiments described above (i.e., the connection regions 510 are formed after the radiation absorption layer 700 is formed) .
  • Fig. 13 –Fig. 16 schematically show an alternative fabrication process of a radiation detector 1600 (Fig. 16) , according to an embodiment.
  • the alternative fabrication process may start with a substrate 1300.
  • the substrate 1300 may include a semiconductor (e.g., GaAs) .
  • the substrate 1300 may be highly doped.
  • the substrate 1300 may include a degenerate semiconductor.
  • a radiation absorption layer 1400 may be formed on the substrate 1300.
  • the radiation absorption layer 1400 may be formed by epitaxial growth on the substrate 1300.
  • the radiation absorption layer 1400 may include a semiconductor whose lattice is similar to the lattice of the substrate 1300.
  • the radiation absorption layer 1400 may include CZT, and the substrate 1300 may include GaAs. So, the radiation absorption layer 1400 may be formed by epitaxial growth of CZT on the GaAs substrate 1300.
  • N electrodes 1500 may be formed on the radiation absorption layer 1400 such that the radiation absorption layer 1400 is disposed between the N electrodes 1500 and the substrate 1300 (N is a positive integer) .
  • the N electrodes 1500 may include an electrically conductive material.
  • an electronics layer 1620 may be formed such that (1) each electrode 1500 is disposed between and electrically connect together (A) the radiation absorption layer 1400 and (B) the electronics layer 1620, and (2) the electronics layer 1620 is configured to process electrical signals transmitted to the electronics layer 1620 from the radiation absorption layer 1400 via the N electrodes 1500.
  • the electronics layer 1620 may be formed by bonding the electronics layer 1620 to the radiation absorption layer 1400.
  • the substrate 1300 may be thinned resulting in the radiation detector 1600 of Fig. 16.
  • the radiation absorption layer 1400 and the electronics layer 1620 of the radiation detector 1600 may be respectively similar to the radiation absorption layer 110 and the electronics layer 120 of the radiation detector 100 of Fig. 2 –Fig 4 in terms of structure and function.
  • each electrode 1500 of the radiation detector 1600 may be similar to an electrical contact 119B of the radiation detector 100 of Fig. 3 -Fig. 4 in terms of structure and function.
  • the radiation detector 1600 (Fig. 16) may be similar to the radiation detector 100 of Fig. 1 –Fig 4 in terms of structure and function.
  • the thinned substrate 1300 of the radiation detector 1600 may be similar to the common electrical contact 119A of the radiation detector 100 of Fig. 3 –Fig. 4 in terms of structure and function (both are common electrodes of the sensing elements of the respective radiation detectors) .

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
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  • High Energy & Nuclear Physics (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

Procédé consiste à : former M régions de connexion sur un substrat, M étant un nombre entier positif (1210) ; former une couche d'absorption de rayonnement sur le substrat, les M régions de connexion étant prises en sandwich entre la couche d'absorption de rayonnement et le substrat (1220) ; et former M électrodes respectivement en connexion électrique avec les M régions de connexion (1230).
PCT/CN2022/070036 2022-01-04 2022-01-04 Détecteurs de rayonnement et procédés de fabrication WO2023130198A1 (fr)

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Application Number Priority Date Filing Date Title
PCT/CN2022/070036 WO2023130198A1 (fr) 2022-01-04 2022-01-04 Détecteurs de rayonnement et procédés de fabrication
CN202280084588.6A CN118541775A (zh) 2022-01-04 2022-01-04 辐射检测器和制造方法
TW111146086A TW202329482A (zh) 2022-01-04 2022-12-01 輻射檢測器的製造方法

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Citations (8)

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Publication number Priority date Publication date Assignee Title
CN102655159A (zh) * 2011-03-04 2012-09-05 三星电子株式会社 大型x射线探测器
CN103000645A (zh) * 2011-09-14 2013-03-27 英飞凌科技股份有限公司 具有可控制的光谱响应的光电探测器
JP2017183357A (ja) * 2016-03-28 2017-10-05 国立大学法人静岡大学 放射線検出素子の製造方法、放射線検出素子、およびそれを含む放射線検出器
CN107710021A (zh) * 2015-07-09 2018-02-16 深圳帧观德芯科技有限公司 制作半导体x射线检测器的方法
US20180059263A1 (en) * 2015-03-09 2018-03-01 Hitachi, Ltd. Radiation detector and radiation detection device using the same
CN110291423A (zh) * 2017-01-23 2019-09-27 深圳帧观德芯科技有限公司 制作半导体x射线检测器的方法
CN111226138A (zh) * 2017-10-26 2020-06-02 深圳帧观德芯科技有限公司 能够进行噪声操控的辐射检测器
CN112889130A (zh) * 2018-11-06 2021-06-01 深圳帧观德芯科技有限公司 半导体器件的封装方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102655159A (zh) * 2011-03-04 2012-09-05 三星电子株式会社 大型x射线探测器
CN103000645A (zh) * 2011-09-14 2013-03-27 英飞凌科技股份有限公司 具有可控制的光谱响应的光电探测器
US20180059263A1 (en) * 2015-03-09 2018-03-01 Hitachi, Ltd. Radiation detector and radiation detection device using the same
CN107710021A (zh) * 2015-07-09 2018-02-16 深圳帧观德芯科技有限公司 制作半导体x射线检测器的方法
JP2017183357A (ja) * 2016-03-28 2017-10-05 国立大学法人静岡大学 放射線検出素子の製造方法、放射線検出素子、およびそれを含む放射線検出器
CN110291423A (zh) * 2017-01-23 2019-09-27 深圳帧观德芯科技有限公司 制作半导体x射线检测器的方法
CN111226138A (zh) * 2017-10-26 2020-06-02 深圳帧观德芯科技有限公司 能够进行噪声操控的辐射检测器
CN112889130A (zh) * 2018-11-06 2021-06-01 深圳帧观德芯科技有限公司 半导体器件的封装方法

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