WO2023173387A1 - Détecteurs de rayonnement comprenant de la pérovskite - Google Patents

Détecteurs de rayonnement comprenant de la pérovskite Download PDF

Info

Publication number
WO2023173387A1
WO2023173387A1 PCT/CN2022/081565 CN2022081565W WO2023173387A1 WO 2023173387 A1 WO2023173387 A1 WO 2023173387A1 CN 2022081565 W CN2022081565 W CN 2022081565W WO 2023173387 A1 WO2023173387 A1 WO 2023173387A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
perovskite layer
substrate
perovskite
radiation
Prior art date
Application number
PCT/CN2022/081565
Other languages
English (en)
Inventor
Peiyan CAO
Yurun LIU
Original Assignee
Shenzhen Xpectvision Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Xpectvision Technology Co., Ltd. filed Critical Shenzhen Xpectvision Technology Co., Ltd.
Priority to PCT/CN2022/081565 priority Critical patent/WO2023173387A1/fr
Priority to TW112108035A priority patent/TW202338398A/zh
Publication of WO2023173387A1 publication Critical patent/WO2023173387A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe

Definitions

  • a radiation detector is a device that measures a property of a radiation. Examples of the property may include a spatial distribution of the intensity, phase, and polarization of the radiation.
  • the radiation measured by the radiation detector may be a radiation that has transmitted through an object.
  • the radiation measured by the radiation detector may be electromagnetic radiation such as infrared light, visible light, ultraviolet light, X-ray, or ⁇ -ray.
  • the radiation may be of other types such as ⁇ -rays and ⁇ -rays.
  • An imaging system may include one or more image sensors each of which may have one or more radiation detectors.
  • a method comprising placing a substrate in a growth medium thereby forming a perovskite layer on the substrate.
  • the perovskite layer is configured to generate signals in response to radiation particles incident on the perovskite layer, and the substrate is configured to process and analyze the signals generated by the perovskite layer.
  • the growth medium is in liquid phase.
  • the growth medium is in gas phase.
  • an input/output region of the substrate is not exposed to the growth medium.
  • the perovskite layer comprises M sensing elements, M being a positive integer; each sensing element of the M sensing elements is configured to generate electrical signals in said each sensing element in response to said each sensing element receiving incident radiation; the substrate comprises an electronics layer configured to process and analyze the electrical signals generated in said each sensing element.
  • one or more electrodes are on a surface of the substrate, and the perovskite layer is formed on the surface of the substrate.
  • the one or more electrodes are electrically connected to the perovskite layer.
  • the incident radiation received by said each sensing element comprises one or more X-ray photons.
  • the electrical signals generated by said each sensing element comprise electron hole pairs.
  • the method further comprises forming a common electrode on the perovskite layer.
  • the common electrode is electrically connected to all the M sensing elements.
  • the perovskite layer is disposed between the common electrode and the electronics layer.
  • the electronics layer comprises N ASICs (application-specific integrated circuits) , N being a positive integer.
  • the method further comprises, before said placing the substrate in the growth medium is performed, bonding an interposer to the electronics layer of the substrate. Said placing the substrate in the growth medium is performed such that the interposer is disposed between the perovskite layer and the electronics layer.
  • the perovskite layer is configured to generate visible lights in response to the perovskite layer receiving incident radiation;
  • the substrate comprises P photodiodes, P being a positive integer; each photodiode of the P photodiodes is configured to generate electrical signals in response to said each photodiode receiving photons of the visible lights generated by the perovskite layer; and the substrate further comprises an electronics layer configured to process and analyze the electrical signals generated by said each photodiode.
  • the incident radiation received by the perovskite layer comprises one or more X-ray photons.
  • the electronics layer comprises Q ASICs (application-specific integrated circuits) , Q being a positive integer.
  • the P photodiodes are between the perovskite layer and the electronics layer.
  • a method comprising placing an interposer in a growth medium thereby forming a perovskite layer on the interposer; and then bonding the interposer to an electronics layer such that the interposer is disposed between the perovskite layer and the electronics layer.
  • the perovskite layer comprises R sensing elements, R being a positive integer. Each sensing element of the R sensing elements is configured to generate electrical signals in said each sensing element in response to said each sensing element receiving incident radiation.
  • the electronics layer is configured to process and analyze the electrical signals generated in said each sensing element.
  • one or more electrodes are on a surface of the interposer, and the perovskite layer is formed on the surface of the interposer.
  • the one or more electrodes are electrically connected to the perovskite layer.
  • the incident radiation received by said each sensing element comprises one or more X-ray photons.
  • the electronics layer comprises S ASICs (application-specific integrated circuits) , S being a positive integer.
  • the growth medium is in liquid phase.
  • the growth medium is in gas phase.
  • Fig. 1 schematically shows a radiation detector, according to an embodiment.
  • Fig. 2 schematically shows a simplified cross-sectional view of the radiation detector, according to an embodiment.
  • Fig. 3 schematically shows a detailed cross-sectional view of the radiation detector, according to an embodiment.
  • Fig. 4 schematically shows a detailed cross-sectional view of the radiation detector, according to an alternative embodiment.
  • Fig. 5 schematically shows a top view of a radiation detector package including the radiation detector and a printed circuit board (PCB) , according to an embodiment.
  • PCB printed circuit board
  • Fig. 6 schematically shows a cross-sectional view of an image sensor including the packages of Fig. 5 mounted to a system PCB (printed circuit board) , according to an embodiment.
  • PCB printed circuit board
  • Fig. 7A –Fig. 7C schematically show the fabrication process of a radiation detector including perovskite, according to an embodiment.
  • Fig. 8 shows a flowchart generalizing the fabrication process of Fig. 7A -Fig. 7C, according to an embodiment.
  • Fig. 9 schematically shows a cross-sectional view of the radiation detector of Fig. 7C, according to an alternative embodiment.
  • Fig. 10 shows a flowchart generalizing the fabrication process of the radiation detector of Fig. 9, according to an embodiment.
  • Fig. 11A –Fig. 11B schematically show the fabrication process of a radiation detector including perovskite, according to an alternative embodiment.
  • Fig. 1 schematically shows a radiation detector 100, as an example.
  • the radiation detector 100 may include an array of pixels 150 (also referred to as sensing elements 150) .
  • the array may be a rectangular array (as shown in Fig. 1) , a honeycomb array, a hexagonal array, or any other suitable array.
  • the array of pixels 150 in the example of Fig. 1 has 4 rows and 7 columns; however, in general, the array of pixels 150 may have any number of rows and any number of columns.
  • Each pixel 150 may be configured to detect radiation from a radiation source (not shown) incident thereon and may be configured to measure a characteristic (e.g., the energy of the particles, the wavelength, and the frequency) of the radiation.
  • the radiation may include radiation particles such as photons (X-rays, gamma rays, etc. ) and subatomic particles (alpha particles, beta particles, etc. )
  • Each pixel 150 may be configured to count numbers of particles of radiation incident thereon whose energy falls in a plurality of bins of energy, within a period of time. All the pixels 150 may be configured to count the numbers of particles of radiation incident thereon within a plurality of bins of energy within the same period of time. When the incident particles of radiation have similar energy, the pixels 150 may be simply configured to count numbers of particles of radiation incident thereon within a period of time, without measuring the energy of the individual particles of radiation.
  • Each pixel 150 may have its own analog-to-digital converter (ADC) configured to digitize an analog signal representing the energy of an incident particle of radiation into a digital signal, or to digitize an analog signal representing the total energy of a plurality of incident particles of radiation into a digital signal.
  • ADC analog-to-digital converter
  • the pixels 150 may be configured to operate in parallel. For example, when one pixel 150 measures an incident particle of radiation, another pixel 150 may be waiting for a particle of radiation to arrive. The pixels 150 may not have to be individually addressable.
  • the radiation detector 100 described here may have applications such as in an X-ray telescope, X-ray mammography, industrial X-ray defect detection, X-ray microscopy or microradiography, X-ray casting inspection, X-ray non-destructive testing, X-ray weld inspection, X-ray digital subtraction angiography, etc. It may be suitable to use this radiation detector 100 in place of a photographic plate, a photographic film, a PSP plate, an X-ray image intensifier, a scintillator, or another semiconductor X-ray detector.
  • Fig. 2 schematically shows a simplified cross-sectional view of the radiation detector 100 of Fig. 1 along a line 2-2, according to an embodiment.
  • the radiation detector 100 may include a radiation absorption layer 110 and an electronics layer 120 (which may include one or more ASICs or application-specific integrated circuits) for processing and analyzing electrical signals which incident radiation generates in the radiation absorption layer 110.
  • the radiation detector 100 may or may not include a scintillator (not shown) .
  • the radiation absorption layer 110 may include a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof.
  • the semiconductor material may have a high mass attenuation coefficient for the radiation of interest.
  • the radiation absorption layer 110 may include one or more diodes (e.g., p-i-n or p-n) formed by a first doped region 111, one or more discrete regions 114 of a second doped region 113.
  • the second doped region 113 may be separated from the first doped region 111 by an optional intrinsic region 112.
  • the discrete regions 114 may be separated from one another by the first doped region 111 or the intrinsic region 112.
  • the first doped region 111 and the second doped region 113 may have opposite types of doping (e.g., region 111 is p-type and region 113 is n-type, or region 111 is n-type and region 113 is p-type) .
  • each of the discrete regions 114 of the second doped region 113 forms a diode with the first doped region 111 and the optional intrinsic region 112.
  • the radiation absorption layer 110 has a plurality of diodes (more specifically, 7 diodes corresponding to 7 pixels 150 of one row in the array of Fig. 1, of which only 2 pixels 150 are labeled in Fig. 3 for simplicity) .
  • the plurality of diodes may have an electrical contact 119A as a shared (common) electrode.
  • the first doped region 111 may also have discrete portions.
  • the electronics layer 120 may include an electronic system 121 suitable for processing or interpreting signals generated by the radiation incident on the radiation absorption layer 110.
  • the electronic system 121 may include an analog circuitry such as a filter network, amplifiers, integrators, and comparators, or a digital circuitry such as a microprocessor, and memory.
  • the electronic system 121 may include one or more ADCs (analog to digital converters) .
  • the electronic system 121 may include components shared by the pixels 150 or components dedicated to a single pixel 150.
  • the electronic system 121 may include an amplifier dedicated to each pixel 150 and a microprocessor shared among all the pixels 150.
  • the electronic system 121 may be electrically connected to the pixels 150 by vias 131. Space among the vias may be filled with a filler material 130, which may increase the mechanical stability of the connection of the electronics layer 120 to the radiation absorption layer 110. Other bonding techniques are possible to connect the electronic system 121 to the pixels 150 without using the vias 131.
  • the radiation absorption layer 110 including diodes
  • particles of the radiation may be absorbed and generate one or more charge carriers (e.g., electrons, holes) by a number of mechanisms.
  • the charge carriers may drift to the electrodes of one of the diodes under an electric field.
  • the electric field may be an external electric field.
  • the electrical contact 119B may include discrete portions each of which is in electrical contact with the discrete regions 114.
  • the term “electrical contact” may be used interchangeably with the word “electrode.
  • the charge carriers may drift in directions such that the charge carriers generated by a single particle of the radiation are not substantially shared by two different discrete regions 114 ( “not substantially shared” here means less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete regions 114 than the rest of the charge carriers) .
  • Charge carriers generated by a particle of the radiation incident around the footprint of one of these discrete regions 114 are not substantially shared with another of these discrete regions 114.
  • a pixel 150 associated with a discrete region 114 may be an area around the discrete region 114 in which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%of) charge carriers generated by a particle of the radiation incident therein flow to the discrete region 114. Namely, less than 2%, less than 1%, less than 0.1%, or less than 0.01%of these charge carriers flow beyond the pixel 150.
  • Fig. 4 schematically shows a detailed cross-sectional view of the radiation detector 100 of Fig. 1 along the line 2-2, according to an alternative embodiment.
  • the radiation absorption layer 110 may include a resistor of a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof, but does not include a diode.
  • the semiconductor material may have a high mass attenuation coefficient for the radiation of interest.
  • the electronics layer 120 of Fig. 4 is similar to the electronics layer 120 of Fig. 3 in terms of structure and function.
  • the radiation When the radiation hits the radiation absorption layer 110 including the resistor but not diodes, it may be absorbed and generate one or more charge carriers by a number of mechanisms.
  • a particle of the radiation may generate 10 to 100,000 charge carriers.
  • the charge carriers may drift to the electrical contacts 119A and 119B under an electric field.
  • the electric field may be an external electric field.
  • the electrical contact 119B may include discrete portions.
  • the charge carriers may drift in directions such that the charge carriers generated by a single particle of the radiation are not substantially shared by two different discrete portions of the electrical contact 119B ( “not substantially shared” here means less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete portions than the rest of the charge carriers) .
  • a pixel 150 associated with a discrete portion of the electrical contact 119B may be an area around the discrete portion in which substantially all (more than 98%, more than 99.5%, more than 99.9%or more than 99.99%of) charge carriers generated by a particle of the radiation incident therein flow to the discrete portion of the electrical contact 119B. Namely, less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow beyond the pixel associated with the one discrete portion of the electrical contact 119B.
  • Fig. 5 schematically shows a top view of a radiation detector package 500 including the radiation detector 100 and a printed circuit board (PCB) 510.
  • PCB printed circuit board
  • the term “PCB” as used herein is not limited to a particular material.
  • a PCB may include a semiconductor.
  • the radiation detector 100 may be mounted to the PCB 510.
  • the wiring between the radiation detector 100 and the PCB 510 is not shown for the sake of clarity.
  • the package 500 may have one or more radiation detectors 100.
  • the PCB 510 may include an input/output (I/O) area 512 not covered by the radiation detector 100 (e.g., for accommodating bonding wires 514) .
  • the radiation detector 100 may have an active area 190 which is where the pixels 150 (Fig. 1) are located.
  • the radiation detector 100 may have a perimeter zone 195 near the edges of the radiation detector 100.
  • the perimeter zone 195 has no pixels 150, and the radiation detector 100 does not detect particles of radiation incident on the perimeter zone
  • Fig. 6 schematically shows a cross-sectional view of an image sensor 600, according to an embodiment.
  • the image sensor 600 may include one or more radiation detector packages 500 of Fig. 5 mounted to a system PCB 650.
  • the electrical connection between the PCBs 510 and the system PCB 650 may be made by bonding wires 514.
  • the PCB 510 may have the I/O area 512 not covered by the radiation detectors 100.
  • the packages 500 may have gaps in between. The gaps may be approximately 1 mm or more.
  • a dead zone of a radiation detector (e.g., the radiation detector 100) is the area of the radiation-receiving surface of the radiation detector, on which incident particles of radiation cannot be detected by the radiation detector.
  • a dead zone of a package (e.g., package 500) is the area of the radiation-receiving surface of the package, on which incident particles of radiation cannot be detected by the radiation detector or detectors in the package.
  • the dead zone of the package 500 includes the perimeter zones 195 and the I/O area 512.
  • a dead zone (e.g., 688) of an image sensor (e.g., image sensor 600) with a group of packages (e.g., packages 500 mounted on the same PCB and arranged in the same layer or in different layers) includes the combination of the dead zones of the packages in the group and the gaps between the packages.
  • the radiation detector 100 (Fig. 1) operating by itself may be considered an image sensor.
  • the package 500 (Fig. 5) operating by itself may be considered an image sensor.
  • the image sensor 600 including the radiation detectors 100 may have the dead zone 688 among the active areas 190 of the radiation detectors 100. However, the image sensor 600 may capture multiple partial images of an object or scene (not shown) one by one, and then these captured partial images may be stitched to form a stitched image of the entire object or scene.
  • image in the present patent application (including the claims) is not limited to spatial distribution of a property of a radiation (such as intensity) .
  • image may also include the spatial distribution of density of a substance or element.
  • Fig. 7A -Fig. 7C schematically show the fabrication process of a radiation detector 700 (Fig. 7C) including perovskite, according to an embodiment.
  • the fabrication process may start with an electronics layer 720 including a surface 722 and electrodes 719B on the surface 722.
  • the electronics layer 720 and the electrodes 719B may be respectively similar to the electronics layer 120 and the electrical contacts 119B of Fig. 4 in terms of function and/or structure.
  • a perovskite layer 710 may be formed on the electronics layer 720 of Fig. 7A. In an embodiment, the perovskite layer 710 may be formed on the surface 722 of the electronics layer 720. In an embodiment, the perovskite layer 710 may be electrically connected to the electrodes 719B. The electrical connection between the electrodes 719B and the perovskite layer 710 may naturally form during the growth of the perovskite layer 710. Alternatively, a post-growth treatment (e.g., annealing) may cause the formation of the electrical connection. Although the perovskite layer 710 is shown as being monolithic, it may have crystal grains.
  • the perovskite layer 710 may be formed on the electronics layer 720 by placing the electronics layer 720 in a growth medium (not shown) thereby forming the perovskite layer 710 on the electronics layer 720 as shown.
  • the growth medium may be in liquid phase.
  • the growth medium may be in gas phase.
  • a common electrode 719A may be formed on the perovskite layer 710, resulting in the radiation detector 700.
  • the common electrode 719A may include polysilicon or a metal.
  • the perovskite layer 710 may be disposed between the common electrode 719A and the electronics layer 720 as shown.
  • the radiation detector 700 may be similar to the radiation detector 100 of Fig. 4 in terms of function and/or structure.
  • the common electrode 719A, the perovskite layer 710, the electrodes 719B, and the electronics layer 720 of the radiation detector 700 may be respectively similar to the electrical contact 119A, the absorption layer 110, the electrical contacts 119B, and the electronics layer 120 of the radiation detector 100 of Fig. 4 in terms of function and/or structure.
  • the perovskite layer 710 of the radiation detector 700 may include sensing elements 150.
  • Each sensing element 150 of the radiation detector 700 may generate electrical signals (e.g., electron hole pairs) in said each sensing element 150 in response to said each sensing element 150 receiving incident radiation (e.g., X-rays) .
  • the electronics layer 720 of the radiation detector 700 may include one or more ASICs configured to process and analyze the electrical signals generated by said each sensing element 150 of the radiation detector 700.
  • Each sensing element 150 may have a single grain of crystal of the perovskite. A single grain of crystal of the perovskite may span multiple sensing elements 150.
  • Fig. 8 shows a flowchart 800 generalizing the fabrication process of Fig. 7A -Fig. 7C, according to an embodiment.
  • the fabrication process may include placing a substrate in a growth medium thereby forming a perovskite layer on the substrate.
  • the electronics layer 720 is placed in the growth medium thereby forming the perovskite layer 710 on the electronics layer 720.
  • the perovskite layer is configured to generate signals in response to radiation particles incident on the perovskite layer.
  • the perovskite layer 710 is configured to generate electrical signals (e.g., electron hole pairs) in response to radiation particles (e.g., X-rays) incident on the perovskite layer 710.
  • the substrate is configured to process and analyze the signals generated by the perovskite layer.
  • the electronics layer 720 is configured to process and analyze the electrical signals generated by the perovskite layer 710.
  • the electronics layer 720 may include an input/output region (not shown) .
  • the input/output region of the electronics layer 720 may not be exposed to the growth medium.
  • the input/output region may be covered by a mask (not shown) while the electronics layer 720 is placed in the growth medium.
  • Fig. 9 schematically shows the radiation detector 700, according to an alternative embodiment.
  • the radiation detector 700 of Fig. 9 may be similar to the radiation detector 700 of Fig. 7C in terms of function and structure, except that the radiation detector 700 of Fig. 9 may have an interposer 910 between the perovskite layer 710 and the electronics layer 720 as shown.
  • the interposer 910 may include electrically conductive lines (not shown) that electrically connect the electronics layer 720 to the sensing elements 150 via the electrodes 719B.
  • the fabrication process of the radiation detector 700 of Fig. 9 may be as follows. Firstly, the interposer 910 may be bonded to the electronics layer 720. In an embodiment, the resulting combination of the interposer 910 and the electronics layer 720 may be placed in a growth medium thereby forming the perovskite layer 710 on the interposer 910. In an embodiment, the common electrode 719A may be formed on the perovskite layer 710, resulting in the radiation detector 700 of Fig. 9.
  • the fabrication process of the radiation detector 700 of Fig. 9 may be as follows. Firstly, the interposer 910 may be placed in the growth medium (in liquid phase or in gas phase) thereby forming the perovskite layer 710 on the interposer 910. Specifically, in an embodiment, the perovskite layer 710 may be formed on a surface 912 of the interposer 910 where the electrodes 719B are on the surface 912. In an embodiment, the electrodes 719B may be electrically connected to the perovskite layer 710.
  • the interposer 910 may be bonded to the electronics layer 720 such that the interposer 910 is disposed between the perovskite layer 710 and the electronics layer 720.
  • the common electrode 719A may be formed on the perovskite layer 710, resulting in the radiation detector 700 of Fig. 9.
  • Fig. 10 shows a flowchart 1000 generalizing the fabrication process of the radiation detector 700 of Fig. 9 according to the alternative embodiment described above.
  • the fabrication process may include placing an interposer in a growth medium thereby forming a perovskite layer on the interposer.
  • the interposer 910 is placed in the growth medium thereby forming the perovskite layer 710 on the interposer 910.
  • the fabrication process may include bonding the interposer to an electronics layer such that the interposer is disposed between the perovskite layer and the electronics layer.
  • the interposer 910 is bonded the electronics layer 720 such that the interposer 910 is disposed between the perovskite layer 710 and the electronics layer 720.
  • the perovskite layer comprises R sensing elements, R being a positive integer; each sensing element of the R sensing elements is configured to generate electrical signals in said each sensing element in response to said each sensing element receiving incident radiation; and the electronics layer is configured to process and analyze the electrical signals generated in said each sensing element.
  • the perovskite layer 710 includes multiple sensing elements 150; each sensing element 150 is configured to generate electrical signals in response to said each sensing element 150 receiving incident radiation; and the electronics layer 720 is configured to process and analyze the electrical signals generated in said each sensing element 150.
  • Fig. 11A –Fig. 11B schematically show the fabrication process of a radiation detector 1100 (Fig. 11B) with a scintillator layer including perovskite, according to an embodiment.
  • the fabrication process may start with a radiation detector 1100’.
  • the radiation detector 1100’ may be similar to the radiation detector 100 of Fig. 3 in terms of function and structure, except that the radiation detector 1100’ may or may not have the intrinsic region 112 such that each sensing element 150 of the radiation detector 1100’ may function as a photodiode.
  • a perovskite layer 1130 may be formed on the radiation detector 1100’ of Fig. 11A, resulting in the radiation detector 1100 of Fig. 11B.
  • the perovskite layer 1130 may be formed by placing the radiation detector 1100’ of Fig. 11A in a growth medium thereby forming the perovskite layer 1130 on the radiation detector 1100’ as shown.
  • the perovskite layer 1130 may be formed on the electrical contact 119A of the radiation detector 1100’ such that the sensing elements 150 (i.e., photodiodes) are between the perovskite layer 1130 and the electronics layer 120 as shown.
  • the sensing elements 150 i.e., photodiodes
  • the perovskite layer 1130 may function as a scintillator layer configured to generate visible lights in response to the perovskite layer 1130 receiving incident radiation (e.g., X-rays) .
  • incident radiation e.g., X-rays
  • each sensing element 150 of the radiation detector 1100 may function as a photodiode and generate electrical signals (e.g., electron hole pairs) in response to said each sensing element 150 receiving photons of the visible lights generated by the perovskite layer 1130 (which functions as a scintillator layer) .
  • electrical signals e.g., electron hole pairs
  • the electronics layer 120 of the radiation detector 1100 may include one or more ASICs configured to process and analyze the electrical signals (e.g., electron hole pairs) generated by each sensing element (i.e., photodiode) 150 of the radiation detector 1100.
  • ASICs configured to process and analyze the electrical signals (e.g., electron hole pairs) generated by each sensing element (i.e., photodiode) 150 of the radiation detector 1100.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un procédé consistant à placer un substrat dans un milieu de croissance de manière à ainsi former une couche de pérovskite sur le substrat. La couche de pérovskite est conçue pour générer des signaux en réponse à l'incidence de particules de rayonnement sur la couche de pérovskite, et le substrat est conçu pour traiter et analyser les signaux générés par la couche de pérovskite.
PCT/CN2022/081565 2022-03-18 2022-03-18 Détecteurs de rayonnement comprenant de la pérovskite WO2023173387A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2022/081565 WO2023173387A1 (fr) 2022-03-18 2022-03-18 Détecteurs de rayonnement comprenant de la pérovskite
TW112108035A TW202338398A (zh) 2022-03-18 2023-03-06 輻射檢測器的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2022/081565 WO2023173387A1 (fr) 2022-03-18 2022-03-18 Détecteurs de rayonnement comprenant de la pérovskite

Publications (1)

Publication Number Publication Date
WO2023173387A1 true WO2023173387A1 (fr) 2023-09-21

Family

ID=88021910

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/081565 WO2023173387A1 (fr) 2022-03-18 2022-03-18 Détecteurs de rayonnement comprenant de la pérovskite

Country Status (2)

Country Link
TW (1) TW202338398A (fr)
WO (1) WO2023173387A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108963001A (zh) * 2018-07-02 2018-12-07 合肥工业大学 一种定位生长钙钛矿薄膜阵列的方法
CN111554814A (zh) * 2020-05-11 2020-08-18 陕西师范大学 一种以钙钛矿材料为基础的集成电路及其制备方法
CN113659039A (zh) * 2021-08-20 2021-11-16 华中科技大学 阵列互联的CsPbCl3紫外光电探测器及其制备方法
WO2022018418A1 (fr) * 2020-07-20 2022-01-27 Queen Mary University Of London Recuit par solvant

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108963001A (zh) * 2018-07-02 2018-12-07 合肥工业大学 一种定位生长钙钛矿薄膜阵列的方法
CN111554814A (zh) * 2020-05-11 2020-08-18 陕西师范大学 一种以钙钛矿材料为基础的集成电路及其制备方法
WO2022018418A1 (fr) * 2020-07-20 2022-01-27 Queen Mary University Of London Recuit par solvant
CN113659039A (zh) * 2021-08-20 2021-11-16 华中科技大学 阵列互联的CsPbCl3紫外光电探测器及其制备方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHEN QIUSHUI; WU JING; OU XIANGYU; HUANG BOLONG; ALMUTLAQ JAWAHER; ZHUMEKENOV AYAN A.; GUAN XINWEI; HAN SANYANG; LIANG LIANGLIANG;: "All-inorganic perovskite nanocrystal scintillators", NATURE, vol. 561, no. 7721, 27 August 2018 (2018-08-27), pages 88 - 93, XP036582720, DOI: 10.1038/s41586-018-0451-1 *
FAN LIMING, WANG SHIMAO, YE YUQI, DING BOWEN, SHAN XUEYAN, MENG GANG, FANG XIAODONG: "Recent advances in rational synthesis and applications of halide perovskites micro/nano-arrays", CHINESE JOURNAL OF APPLIED CHEMISTRY, vol. 37, no. 4, 1 April 2020 (2020-04-01), pages 367 - 379, XP093091562 *
ZOU TAOYU; CHEN CHANGDONG; XIANG BEN; WANG YA; LIU CHUAN; ZHANG SHENGDONG; ZHOU HANG: "Flexible, active-matrix flat-panel image sensor for low dose X-ray detection enabled by integration of perovskite photodiode and oxide thin film transistor", 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE, 7 December 2019 (2019-12-07), XP033714591, DOI: 10.1109/IEDM19573.2019.8993639 *

Also Published As

Publication number Publication date
TW202338398A (zh) 2023-10-01

Similar Documents

Publication Publication Date Title
US20230280482A1 (en) Imaging systems
US11904187B2 (en) Imaging methods using multiple radiation beams
US20210327949A1 (en) Imaging systems and methods of operating the same
WO2023173387A1 (fr) Détecteurs de rayonnement comprenant de la pérovskite
WO2023123302A1 (fr) Procédés d'imagerie faisant appel à des compteurs bidirectionnels
WO2023141911A1 (fr) Procédé et système pour réaliser une diffractométrie
WO2024031301A1 (fr) Systèmes d'imagerie et procédés de fonctionnement correspondants
WO2024044925A1 (fr) Capteurs d'image à incidence latérale avec puces de circuit intégré en saillie
WO2023123301A1 (fr) Systèmes d'imagerie avec capteurs d'image rotatifs
WO2023123161A1 (fr) Systèmes d'imagerie avec capteurs d'image pour incidence de rayonnement latéral pendant l'imagerie
WO2023283848A1 (fr) Contrôle de rouleau de batterie avec des systèmes d'imagerie
WO2023115516A1 (fr) Systèmes d'imagerie et procédés de fonctionnement
WO2022198468A1 (fr) Systèmes d'imagerie avec capteurs d'images ayant de multiples détecteurs de rayonnement
WO2023130199A1 (fr) Capteurs d'image et procédés de fonctionnement
WO2022109870A1 (fr) Procédé d'imagerie utilisant un capteur d'image avec multiples détecteurs de rayonnement
WO2023122921A1 (fr) Capteurs d'image comprenant de petites et fines puces de circuit intégré
WO2023130198A1 (fr) Détecteurs de rayonnement et procédés de fabrication
US11948285B2 (en) Imaging systems with multiple radiation sources
WO2023272421A1 (fr) Test de film de batterie à l'aide de systèmes d'imagerie
US20230346332A1 (en) Imaging methods using multiple radiation beams
WO2021168690A1 (fr) Capteurs d'image et procédés de fonctionnement de ceux-ci
WO2023130197A1 (fr) Mesures de vitesse d'écoulement en utilisant des systèmes d'imagerie
US11156730B2 (en) Radiation detector
US11617554B2 (en) Imaging systems using x-ray fluorescence
WO2023039701A1 (fr) Impression 3d (tridimensionnelle) avec remplissage de vide

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22931422

Country of ref document: EP

Kind code of ref document: A1