WO2024031301A1 - Systèmes d'imagerie et procédés de fonctionnement correspondants - Google Patents

Systèmes d'imagerie et procédés de fonctionnement correspondants Download PDF

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Publication number
WO2024031301A1
WO2024031301A1 PCT/CN2022/111006 CN2022111006W WO2024031301A1 WO 2024031301 A1 WO2024031301 A1 WO 2024031301A1 CN 2022111006 W CN2022111006 W CN 2022111006W WO 2024031301 A1 WO2024031301 A1 WO 2024031301A1
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WO
WIPO (PCT)
Prior art keywords
image sensor
gaps
radiation
images
rotation axis
Prior art date
Application number
PCT/CN2022/111006
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English (en)
Inventor
Peiyan CAO
Yurun LIU
Original Assignee
Shenzhen Xpectvision Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Xpectvision Technology Co., Ltd. filed Critical Shenzhen Xpectvision Technology Co., Ltd.
Priority to PCT/CN2022/111006 priority Critical patent/WO2024031301A1/fr
Priority to TW112128231A priority patent/TW202407385A/zh
Publication of WO2024031301A1 publication Critical patent/WO2024031301A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
    • A61B6/42—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis
    • A61B6/4208—Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment with arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector

Definitions

  • a radiation detector is a device that measures a property of a radiation. Examples of the property may include a spatial distribution of the intensity, phase, and polarization of the radiation.
  • the radiation measured by the radiation detector may be a radiation that has transmitted through an object.
  • the radiation measured by the radiation detector may be electromagnetic radiation such as infrared light, visible light, ultraviolet light, X-ray, or ⁇ -ray.
  • the radiation may be of other types such as ⁇ -rays and ⁇ -rays.
  • An imaging system may include one or more image sensors each of which may have one or more radiation detectors.
  • the image sensor comprises multiple active areas and first gaps among the multiple active areas, and each gap of the first gaps is along a first direction not parallel to the translation line.
  • a translation amplitude of said translating is greater than any width of any gap of the first gaps measured in a direction parallel to the translation line.
  • the image sensor further comprises second gaps among the multiple active areas, and each gap of the second gaps is along a second direction perpendicular to the first direction.
  • the rotation axis intersects an active area of the multiple active areas or a gap of the first gaps and does not intersect any gap of the second gaps.
  • said stitching is performed by the image sensor.
  • the radiation beam comprises X-ray.
  • the rotation axis intersects the object.
  • the image sensor comprises multiple active areas and first gaps among the multiple active areas, and each gap of the first gaps is along a first direction not parallel to the translation line.
  • a translation amplitude of said translating of the image sensor is greater than any width of any gap of the first gaps measured in a direction parallel to the translation line.
  • the image sensor further comprises second gaps among the multiple active areas, and each gap of the second gaps is along a second direction perpendicular to the first direction.
  • the rotation axis intersects an active area of the multiple active areas or a gap of the first gaps and does not intersect any gap of the second gaps.
  • the radiation beam comprises X-ray.
  • the rotation axis intersects the object.
  • Fig. 1 schematically shows a radiation detector, according to an embodiment.
  • Fig. 2 schematically shows a simplified cross-sectional view of the radiation detector, according to an embodiment.
  • Fig. 3 schematically shows a detailed cross-sectional view of the radiation detector, according to an embodiment.
  • Fig. 4 schematically shows a detailed cross-sectional view of the radiation detector, according to an alternative embodiment.
  • Fig. 5 schematically shows a top view of a radiation detector package including the radiation detector and a printed circuit board (PCB) , according to an embodiment.
  • PCB printed circuit board
  • Fig. 6 schematically shows a cross-sectional view of an image sensor including the packages of Fig. 5 mounted to a system PCB (printed circuit board) , according to an embodiment.
  • PCB printed circuit board
  • Fig. 7 schematically shows a perspective view of an imaging system, according to an embodiment.
  • Fig. 8 shows a flowchart generalizing the operation of the imaging system, according to an embodiment.
  • Fig. 1 schematically shows a radiation detector 100, as an example.
  • the radiation detector 100 may include an array of pixels 150 (also referred to as sensing elements 150) .
  • the array may be a rectangular array (as shown in Fig. 1) , a honeycomb array, a hexagonal array, or any other suitable array.
  • the array of pixels 150 in the example of Fig. 1 has 4 rows and 7 columns; however, in general, the array of pixels 150 may have any number of rows and any number of columns.
  • Each pixel 150 may be configured to detect radiation from a radiation source (not shown) incident thereon and may be configured to measure a characteristic (e.g., the energy of the particles, the wavelength, and the frequency) of the radiation.
  • the radiation may include radiation particles such as photons (X-rays, gamma rays, etc. ) and subatomic particles (alpha particles, beta particles, etc. )
  • Each pixel 150 may be configured to count numbers of particles of radiation incident thereon whose energy falls in a plurality of bins of energy, within a period of time. All the pixels 150 may be configured to count the numbers of particles of radiation incident thereon within a plurality of bins of energy within the same period of time. When the incident particles of radiation have similar energy, the pixels 150 may be simply configured to count numbers of particles of radiation incident thereon within a period of time, without measuring the energy of the individual particles of radiation.
  • Each pixel 150 may have its own analog-to-digital converter (ADC) configured to digitize an analog signal representing the energy of an incident particle of radiation into a digital signal, or to digitize an analog signal representing the total energy of a plurality of incident particles of radiation into a digital signal.
  • ADC analog-to-digital converter
  • the pixels 150 may be configured to operate in parallel. For example, when one pixel 150 measures an incident particle of radiation, another pixel 150 may be waiting for a particle of radiation to arrive. The pixels 150 may not have to be individually addressable.
  • the radiation detector 100 described here may have applications such as in an X-ray telescope, X-ray mammography, industrial X-ray defect detection, X-ray microscopy or microradiography, X-ray casting inspection, X-ray non-destructive testing, X-ray weld inspection, X-ray digital subtraction angiography, etc. It may be suitable to use this radiation detector 100 in place of a photographic plate, a photographic film, a PSP plate, an X-ray image intensifier, a scintillator, or another semiconductor X-ray detector.
  • Fig. 2 schematically shows a simplified cross-sectional view of the radiation detector 100 of Fig. 1 along a line 2-2, according to an embodiment.
  • the radiation detector 100 may include a radiation absorption layer 110 and an electronics layer 120 (which may include one or more ASICs or application-specific integrated circuits) for processing and analyzing electrical signals which incident radiation generates in the radiation absorption layer 110.
  • the radiation detector 100 may or may not include a scintillator (not shown) .
  • the radiation absorption layer 110 may include a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof.
  • the semiconductor material may have a high mass attenuation coefficient for the radiation of interest.
  • the radiation absorption layer 110 may include one or more diodes (e.g., p-i-n or p-n) formed by a first doped region 111, one or more discrete regions 114 of a second doped region 113.
  • the second doped region 113 may be separated from the first doped region 111 by an optional intrinsic region 112.
  • the discrete regions 114 may be separated from one another by the first doped region 111 or the intrinsic region 112.
  • the first doped region 111 and the second doped region 113 may have opposite types of doping (e.g., region 111 is p-type and region 113 is n-type, or region 111 is n-type and region 113 is p-type) .
  • each of the discrete regions 114 of the second doped region 113 forms a diode with the first doped region 111 and the optional intrinsic region 112.
  • the radiation absorption layer 110 has a plurality of diodes (more specifically, 7 diodes corresponding to 7 pixels 150 of one row in the array of Fig. 1, of which only 2 pixels 150 are labeled in Fig. 3 for simplicity) .
  • the plurality of diodes may have an electrical contact 119A as a shared (common) electrode.
  • the first doped region 111 may also have discrete portions.
  • the electronics layer 120 may include an electronic system 121 suitable for processing or interpreting signals generated by the radiation incident on the radiation absorption layer 110.
  • the electronic system 121 may include an analog circuitry such as a filter network, amplifiers, integrators, and comparators, or a digital circuitry such as a microprocessor, and memory.
  • the electronic system 121 may include one or more ADCs (analog to digital converters) .
  • the electronic system 121 may include components shared by the pixels 150 or components dedicated to a single pixel 150.
  • the electronic system 121 may include an amplifier dedicated to each pixel 150 and a microprocessor shared among all the pixels 150.
  • the electronic system 121 may be electrically connected to the pixels 150 by vias 131. Space among the vias may be filled with a filler material 130, which may increase the mechanical stability of the connection of the electronics layer 120 to the radiation absorption layer 110. Other bonding techniques are possible to connect the electronic system 121 to the pixels 150 without using the vias 131.
  • the radiation absorption layer 110 including diodes
  • particles of the radiation may be absorbed and generate one or more charge carriers (e.g., electrons, holes) by a number of mechanisms.
  • the charge carriers may drift to the electrodes of one of the diodes under an electric field.
  • the electric field may be an external electric field.
  • the electrical contact 119B may include discrete portions each of which is in electrical contact with the discrete regions 114.
  • the term “electrical contact” may be used interchangeably with the word “electrode.
  • the charge carriers may drift in directions such that the charge carriers generated by a single particle of the radiation are not substantially shared by two different discrete regions 114 ( “not substantially shared” here means less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete regions 114 than the rest of the charge carriers) .
  • Charge carriers generated by a particle of the radiation incident around the footprint of one of these discrete regions 114 are not substantially shared with another of these discrete regions 114.
  • a pixel 150 associated with a discrete region 114 may be an area around the discrete region 114 in which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%of) charge carriers generated by a particle of the radiation incident therein flow to the discrete region 114. Namely, less than 2%, less than 1%, less than 0.1%, or less than 0.01%of these charge carriers flow beyond the pixel 150.
  • Fig. 4 schematically shows a detailed cross-sectional view of the radiation detector 100 of Fig. 1 along the line 2-2, according to an alternative embodiment.
  • the radiation absorption layer 110 may include a resistor of a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof, but does not include a diode.
  • the semiconductor material may have a high mass attenuation coefficient for the radiation of interest.
  • the electronics layer 120 of Fig. 4 is similar to the electronics layer 120 of Fig. 3 in terms of structure and function.
  • the radiation When the radiation hits the radiation absorption layer 110 including the resistor but not diodes, it may be absorbed and generate one or more charge carriers by a number of mechanisms.
  • a particle of the radiation may generate 10 to 100,000 charge carriers.
  • the charge carriers may drift to the electrical contacts 119A and 119B under an electric field.
  • the electric field may be an external electric field.
  • the electrical contact 119B may include discrete portions.
  • the charge carriers may drift in directions such that the charge carriers generated by a single particle of the radiation are not substantially shared by two different discrete portions of the electrical contact 119B ( “not substantially shared” here means less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete portions than the rest of the charge carriers) .
  • a pixel 150 associated with a discrete portion of the electrical contact 119B may be an area around the discrete portion in which substantially all (more than 98%, more than 99.5%, more than 99.9%or more than 99.99%of) charge carriers generated by a particle of the radiation incident therein flow to the discrete portion of the electrical contact 119B. Namely, less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow beyond the pixel associated with the one discrete portion of the electrical contact 119B.
  • Fig. 5 schematically shows a top view of a radiation detector package 500 including the radiation detector 100 and a printed circuit board (PCB) 510.
  • PCB printed circuit board
  • the term “PCB” as used herein is not limited to a particular material.
  • a PCB may include a semiconductor.
  • the radiation detector 100 may be mounted to the PCB 510.
  • the wiring between the radiation detector 100 and the PCB 510 is not shown for the sake of clarity.
  • the package 500 may have one or more radiation detectors 100.
  • the PCB 510 may include an input/output (I/O) area 512 not covered by the radiation detector 100 (e.g., for accommodating bonding wires 514) .
  • the radiation detector 100 may have an active area 190 which is where the pixels 150 (Fig. 1) are located.
  • the radiation detector 100 may have a perimeter zone 195 near the edges of the radiation detector 100.
  • the perimeter zone 195 has no pixels 150, and the radiation detector 100 does not detect particles of radiation incident on the perimeter zone
  • Fig. 6 schematically shows a cross-sectional view of an image sensor 600, according to an embodiment.
  • the image sensor 600 may include one or more radiation detector packages 500 of Fig. 5 mounted to a system PCB 650.
  • the electrical connection between the PCBs 510 and the system PCB 650 may be made by bonding wires 514.
  • the PCB 510 may have the I/O area 512 not covered by the radiation detectors 100.
  • the packages 500 may have gaps in between. The gaps may be approximately 1 mm or more.
  • a dead zone of a radiation detector (e.g., the radiation detector 100) is the area of the radiation-receiving surface of the radiation detector, on which incident particles of radiation cannot be detected by the radiation detector.
  • a dead zone of a package (e.g., package 500) is the area of the radiation-receiving surface of the package, on which incident particles of radiation cannot be detected by the radiation detector or detectors in the package.
  • the dead zone of the package 500 includes the perimeter zones 195 and the I/O area 512.
  • a dead zone (e.g., 688) of an image sensor (e.g., image sensor 600) with a group of packages (e.g., packages 500 mounted on the same PCB and arranged in the same layer or in different layers) includes the combination of the dead zones of the packages in the group and the gaps between the packages.
  • the radiation detector 100 (Fig. 1) operating by itself may be considered an image sensor.
  • the package 500 (Fig. 5) operating by itself may be considered an image sensor.
  • the image sensor 600 including the radiation detectors 100 may have the dead zone 688 among the active areas 190 of the radiation detectors 100. However, the image sensor 600 may capture multiple partial images of an object or scene (not shown) one by one, and then these captured partial images may be stitched to form a stitched image of the entire object or scene.
  • image is not limited to spatial distribution of a property of a radiation (such as intensity) .
  • image may also include the spatial distribution of density of a substance or element.
  • Fig. 7 schematically shows a perspective view of an imaging system 700, according to an embodiment.
  • the imaging system 700 may include an image sensor 710 and a radiation source 720.
  • the image sensor 710 may be similar to the image sensor 600 of Fig. 6.
  • the image sensor 710 may include 9 active areas 190 arranged in 3 rows and 3 columns as shown.
  • the image sensor 710 may have any number of active areas 190 which may be arranged in any way.
  • an object 730 may be positioned between the image sensor 710 and the radiation source 720 as shown.
  • the imaging system 700 may operate as follows.
  • the radiation source 720 may send a radiation beam 725 toward the object 730.
  • the radiation beam 725 may include X-rays.
  • the object 730 may be rotated about a rotation axis 735 perpendicular to an imaging plane (not shown) of the image sensor 710, wherein the imaging plane intersects all sensing elements 150 of the image sensor 710.
  • the imaging plane may be a plane that actually intersects all the sensing elements 150 of the image sensor 710.
  • the imaging plane may be a best-fit plane (e.g., least square) for all the sensing elements 150 of the image sensor 710.
  • the image sensor 710 may be translated back and forth with respect to the rotation axis 735 along a translation line 712 perpendicular to the rotation axis 735.
  • the image sensor 710 may capture multiple images of the object 730. Specifically, the image sensor 710 may capture each of the multiple images of the object 730 based on an interaction between the radiation beam 725 and the object 730.
  • the interaction between the radiation beam 725 and the object 730 may include scenarios such as: (A) some of the radiation particles of the radiation beam 725 that are incident on the object 730 are blocked by the object 730, (B) some of the radiation particles of the radiation beam 725 that are incident on the object 730 travel through the object 730 without changing their directions, and (C) some of the radiation particles of the radiation beam 725 that are incident on the object 730 collide with atoms of the object 730 and thereby change their directions.
  • Fig. 8 shows a flowchart 800 generalizing the operation of the imaging system 700 of Fig. 7, according to an embodiment.
  • the operation may include sending a radiation beam toward an object.
  • the radiation source 720 sends the radiation beam 725 toward the object 730.
  • the operation may include rotating the object about a rotation axis perpendicular to an imaging plane of an image sensor, wherein the imaging plane intersects all sensing elements of the image sensor.
  • the object 730 is rotated about the rotation axis 735 perpendicular to the imaging plane of the image sensor 710.
  • the operation may include translating back and forth the image sensor with respect to the rotation axis along a translation line perpendicular to the rotation axis.
  • the image sensor 710 is translated back and forth with respect to the rotation axis 735 along the translation line 712 perpendicular to the rotation axis 735.
  • the image sensor 710 captures each of the multiple images of the object 730 based on an interaction between the radiation beam 725 and the object 730, wherein each of the multiple images of the object 730 is captured while the object 730 is being rotated and while the image sensor 710 is being translated back and forth as described above.
  • the image sensor 710 may further include first gaps 195x among the active areas 190, wherein each of the first gaps 195x may be along a first direction Ox.
  • the translation line 712 may be chosen such that the translation line 712 is not parallel to the first direction Ox of the first gaps 195x (e.g., the translation line 712 may be chosen to be perpendicular to the first direction Ox of the first gaps 195x) .
  • the image sensor 710 may further include second gaps 195y among the active areas 190, wherein each of the second gaps 195y may be along a second direction Oy.
  • the second direction Oy of the second gaps 195y may be perpendicular to the first direction Ox of the first gaps 195x.
  • the rotation axis 735 (A) may intersect one of the active areas 190 of the image sensor 710 or one of the first gaps 195x and (B) may not intersect any one of the second gaps 195y.
  • the rotation axis 735 intersects an active area 190 of the image sensor 710.
  • the image sensor 710 may be translated back and forth between a first end position and a second end position (not shown) .
  • the distance between the first end position and the second end position may be referred to as translation amplitude.
  • the translation amplitude of the back and forth translation of the image sensor 710 may be greater than any width of any first gap 195x measured in a direction parallel to the translation line 712.
  • the phrase “one value of i at a time” excludes the scenario where the image (1, 1) is captured, then the image (2, 1) is captured, then the image (1, 2) is captured.
  • the rotation of the object 730 about the rotation axis 735 may be negligible.
  • the rotation axis 735 may intersect the object 730 as shown.
  • the image sensor 710 may include 9 active areas 190 arranged in 3 rows and 3 columns as shown.
  • the image sensor 710 may also include 2 first gaps 195x and 2 second gaps 195y among the 9 active areas 190 as shown.
  • the first direction Ox of the first gaps 195x may be perpendicular to the second direction Oy of the second gaps 195y.
  • the object 730 may be rotated (e.g., counterclockwise) non-stop about the rotation axis 735 perpendicular to the imaging plane of the image sensor 710.
  • the rotation axis 735 may intersect an active area 190 of the image sensor 710 as shown.
  • the rotation axis 735 may intersect the object 730.
  • the image sensor 710 may be translated back and forth between the first end position and the second end position and along the translation line 712 which may be perpendicular to the rotation axis 735.
  • the translation line 712 may be perpendicular to the first direction Ox of the first gaps 195x.
  • the back and forth translation of the image sensor 710 may be non-stop between the first end position and the second end position (i.e., the image sensor 710 stops only at the first and second end positions) .
  • the translation amplitude may be greater than any width of any first gap 195x measured in a direction parallel to the translation line 712.
  • the image sensor 710 may capture a first image of the object 730 while the image sensor 710 is at the first end position and the object 730 is at a first angular position. Later, when the image sensor 710 arrives at the second end position and the object 730 arrives at a second angular position, the image sensor 710 may capture a second image of the object 730.
  • each point of the object 730 respectively has 2 shadows with respect to the radiation beam 725 on the imaging plane of the image sensor 710 when the first and second images are captured; and the distance between these 2 shadows of said each point on the imaging plane may not exceed any width of any sensing element 150 of the image sensor 710.
  • the first image may be the image (1, 1)
  • the second image may be the image (1, 2) .
  • the object 730 may be rotated about 20 degrees counterclockwise to a third angular position while the image sensor 710 is translated back and forth multiple times.
  • the image sensor 710 may capture a third image of the object 730 while the image sensor 710 is at the first end position and the object 730 is roughly at the third angular position. Later, when the image sensor 710 arrives at the second end position and the object 730 arrives at a fourth angular position, the image sensor 710 may capture a fourth image of the object 730.
  • each point of the object 730 respectively has 2 shadows with respect to the radiation beam 725 on the imaging plane of the image sensor 710 when the third and fourth images are captured; and the distance between these 2 shadows of said each point on the imaging plane may not exceed any width of any sensing element 150 of the image sensor 710.
  • the third image may be the image (2, 1)
  • the fourth image may be the image (2, 2) .

Abstract

Procédé consistant à : envoyer un faisceau de rayonnement (725) vers un objet (730) ; faire tourner l'objet (730) autour d'un axe de rotation (735) perpendiculaire à un plan d'imagerie d'un capteur d'image (600, 710), le plan d'imagerie croisant tous les éléments de détection (150) du capteur d'image (600, 710) ; effectuer une translation en va-et-vient du capteur d'image (600, 710) par rapport à l'axe de rotation (735) le long d'une ligne de translation (712) perpendiculaire à l'axe de rotation (735) ; et pour i = 1,…,M, et j = 1,…,Ni, capturer avec le capteur d'image (600, 710) une image (i, j) de l'objet (730) sur la base d'une interaction entre le faisceau de rayonnement (725) et l'objet (730), M et Ni, Ni, i = 1,…,M, et j = 1,…,Ni étant capturés pendant que ladite translation est effectuée et pendant que ladite rotation est effectuée.
PCT/CN2022/111006 2022-08-09 2022-08-09 Systèmes d'imagerie et procédés de fonctionnement correspondants WO2024031301A1 (fr)

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PCT/CN2022/111006 WO2024031301A1 (fr) 2022-08-09 2022-08-09 Systèmes d'imagerie et procédés de fonctionnement correspondants
TW112128231A TW202407385A (zh) 2022-08-09 2023-07-27 成像系統和相應的操作方法

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Citations (6)

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US20100172472A1 (en) * 2006-08-14 2010-07-08 Koninklijke Philips Electronics N.V. Collecting images for image stitching with rotating a radiation detector
CN109480878A (zh) * 2018-12-07 2019-03-19 上海联影医疗科技有限公司 C形臂x射线设备及获取x射线图像的方法
US20190150865A1 (en) * 2016-02-03 2019-05-23 Globus Medical, Inc. Portable medical imaging system and method
US20210172887A1 (en) * 2018-09-19 2021-06-10 Shenzhen Xpectvision Technology Co., Ltd. Imaging method
CN113543712A (zh) * 2019-03-29 2021-10-22 深圳帧观德芯科技有限公司 一种带有辐射检测器和准直器的图像传感器
US20220015720A1 (en) * 2018-12-13 2022-01-20 Ucl Business Ltd Computed tomography imaging

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100172472A1 (en) * 2006-08-14 2010-07-08 Koninklijke Philips Electronics N.V. Collecting images for image stitching with rotating a radiation detector
US20190150865A1 (en) * 2016-02-03 2019-05-23 Globus Medical, Inc. Portable medical imaging system and method
US20210172887A1 (en) * 2018-09-19 2021-06-10 Shenzhen Xpectvision Technology Co., Ltd. Imaging method
CN109480878A (zh) * 2018-12-07 2019-03-19 上海联影医疗科技有限公司 C形臂x射线设备及获取x射线图像的方法
US20220015720A1 (en) * 2018-12-13 2022-01-20 Ucl Business Ltd Computed tomography imaging
CN113543712A (zh) * 2019-03-29 2021-10-22 深圳帧观德芯科技有限公司 一种带有辐射检测器和准直器的图像传感器

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